TW201525866A - Method of enabling sleep mode, memory control circuit unit and storage apparatus - Google Patents

Abstract

A sleep mode enabling method for a memory storage apparatus is provided. The method includes determining a device sleep signal pin in the memory storage apparatus is at a second logic level opposite to a first logic level, wherein the memory storage apparatus entries a sleep mode in response the device sleep signal pin being at the first logic level. The method also includes, if yes, enabling a device sleep function of the memory storage apparatus.

Description

Sleep mode starting method, memory control circuit unit and storage device

The present invention relates to a method of operating a memory storage device into a sleep mode, and a memory control circuit unit and a memory storage device using the same.

Because rewritable non-volatile memory has the characteristics of non-volatile data, power saving, small size, no mechanical structure, fast reading and writing speed, etc., in recent years, rewritable non-volatile memory Industry has become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk for a computer to improve the accessibility of a computer. In addition, due to the rise of environmental awareness, green technology has become the goal of electronics manufacturer Lu Li. In order to prevent the drive from continuing to consume power when the user is not using it, the solid state drive has been designed to support the Device Sleep Signal protocol. However, since the device sleep signal is transmitted through one of the pins of the power connection interface, the power supply interface of the host system does not support device sleep. In the example of the signal protocol, when the host system is powered on, the solid state hard disk may go into sleep mode by mistake due to the signal on the power supply interface, and cannot operate.

The invention provides a method for detecting a rewritable non-volatile memory module The method, the memory control circuit unit and the memory storage device are capable of effectively avoiding accidentally entering the sleep mode.

Accordingly, an exemplary embodiment of the present invention provides a sleep mode activation method for a memory storage device. The sleep mode starting method comprises: (a) determining, when receiving an enable device sleep function command from the host system, whether the potential signal on the device sleep signal pin of the memory storage device is in a second logic different from the first logic potential And (b) if it is determined in step (a) that the potential signal on the device sleep signal pin of the memory storage device is at the second logic potential, the device sleep function of the memory storage device is turned on. In addition, the sleep mode starting method further includes: (c) detecting whether the potential signal on the device sleep signal pin of the memory storage device changes from the second logic potential to the first after the device sleep function of the memory storage device is turned on. a logic potential; and (d) if the potential signal on the device sleep signal pin of the memory storage device is detected in step (c) to change from the second logic potential to the first logic potential, the memory storage device is activated Enter sleep mode.

In an exemplary embodiment of the present invention, the sleep mode starting method further includes: if it is determined in step (a) that the potential signal on the device sleep signal pin of the memory storage device is not at the second logic potential, the method does not turn on. Memory storage device Device sleep function.

In an exemplary embodiment of the invention, the first logic potential is a high logic potential and the second logic potential is a low logic potential.

In an exemplary embodiment of the present invention, the sleep mode activation method further includes: after the memory storage device enters the sleep mode, detecting whether the potential signal on the device sleep signal pin of the memory storage device is from the first logic potential Changing to the second logic potential; and returning the memory storage device from the sleep mode to the operation if the potential signal on the device sleep signal pin of the memory storage device is detected to change from the first logic potential to the second logic potential mode.

In an exemplary embodiment of the present invention, the device sleep signal pin is disposed on a power connection interface of the memory storage device.

An exemplary embodiment of the present invention provides a memory control circuit unit including a host interface, a memory interface, and a memory management circuit. The host interface is used to electrically connect to the host system. The memory interface is coupled to the rewritable non-volatile memory module. The memory management circuit is coupled to the memory interface and the host interface, and is configured to receive an enable device sleep function command from the host system through the host interface. When receiving the enable device sleep function command from the host system through the host interface, the memory management circuit determines whether the potential signal on the device sleep signal pin of the memory storage device is at a second logic potential different from the first logic potential. The memory management circuit turns on the device sleep function of the memory storage device if it is determined that the potential signal on the sleep signal pin of the device is at the second logic potential. In addition, after turning on the device sleep function of the memory storage device, the above memory The management circuit is further configured to detect whether the potential signal on the sleep signal pin of the device changes from the second logic potential to the first logic potential. The memory management circuit begins to enter the sleep mode if it is detected that the potential signal on the device sleep signal pin on the power connection interface changes from the second logic potential to the first logic potential.

In an exemplary embodiment of the present invention, if the data connection interface is When the host system determines that the potential signal on the sleep signal pin of the device is not at the second logic potential after receiving the enable device sleep function command, the memory management circuit does not turn on the device sleep function of the memory storage device.

In an exemplary embodiment of the present invention, the power connection interface is a sequence The advanced accessory power connection interface and the above data connection interface are a series of advanced accessory connection interfaces.

In an exemplary embodiment of the present invention, the signal output pin is configured on A power supply connection interface of the host system, and the signal output pin outputs a 3.3 volt voltage.

In an exemplary embodiment of the present invention, the memory management circuit is further configured to detect whether the potential signal on the device sleep signal pin of the memory storage device changes from the first logic potential to the second after entering the sleep mode. Logic potential. The memory management circuit is further configured to return from the sleep mode to the operational mode if the potential signal on the device sleep signal pin of the memory storage device is detected to change from the first logic potential to the second logic potential.

An exemplary embodiment of the present invention provides a memory storage device including a connection interface unit, a rewritable non-volatile memory module, and a memory control circuit. unit. The connection interface unit is coupled to the host system. The rewritable non-volatile memory module has a plurality of physical erasing units. The memory control circuit unit is coupled to the connection interface unit and the rewritable non-volatile memory module. The memory control circuit unit is configured to receive an enable device sleep function instruction from the host system through the data connection interface. When receiving the enable device sleep function command from the host system through the data connection interface, the memory control circuit unit determines whether the potential signal on the device sleep signal pin is at a second logic potential different from the first logic potential. If it is determined that the potential signal on the sleep signal pin of the device is at the second logic potential, the memory control circuit unit turns on the device sleep function of the memory storage device. In addition, after the device sleep function of the memory storage device is turned on, the memory control circuit unit is further configured to detect whether the potential signal on the device sleep signal pin changes from the second logic potential to the first logic potential. The memory control circuit unit begins to enter the sleep mode if it is detected that the potential signal on the sleep signal pin of the device on the power connection interface changes from the second logic potential to the first logic potential.

In an exemplary embodiment of the present invention, if the potential signal on the sleep signal pin of the device is not at the second logic potential after receiving the enable device sleep function command from the host system through the data connection interface, the memory control circuit The unit does not turn on the device sleep function of the memory storage device.

In an exemplary embodiment of the present invention, the memory control circuit unit is further configured to detect whether the potential signal on the sleep signal pin of the device changes from the first logic potential to the second logic potential after entering the sleep mode. If it is detected that the potential signal on the device sleep signal pin on the power connection interface is changed from the first logic potential to When the second logic potential is used, the memory control circuit unit is further configured to return from the sleep mode to the operation mode.

In an exemplary embodiment of the present invention, the connection interface unit further includes a power connection interface, and the device sleep signal pin is disposed on the power connection interface.

An exemplary embodiment of the present invention provides a memory control circuit unit including a host interface, a memory interface, and a memory management circuit. The host interface is used to electrically connect to the host system. The memory interface is coupled to the rewritable non-volatile memory module. The memory management circuit is coupled to the memory interface and the host interface, and is configured to receive an enable device sleep function command from the host system through the host interface. In addition, the host interface has a data connection interface and a power connection interface, and the data connection interface is configured to receive at least one set of differential signals transmitted by the first transmission line, and the power connection interface is configured to receive at least one input power transmitted by the second transmission line, first The transmission line and the second transmission line are independent of each other. Moreover, when receiving the enable device sleep function command from the host system through the host interface, the memory management circuit determines whether the potential signal on the first pin of the power connection interface is at a predetermined logic potential. If it is determined that the potential signal on the first pin is at a predetermined logic potential, the memory management circuit turns on the device sleep function of the memory storage device. In addition, after the device sleep function of the memory storage device is turned on, the memory management circuit is further configured to detect whether the potential signal on the sleep signal pin of the device is the first logic potential. If the potential signal on the device sleep signal pin is detected as the first logic potential, the memory management circuit begins to enter the sleep mode.

In an exemplary embodiment of the present invention, the first pin is different from the device sleep signal pin of the power connection interface.

In an exemplary embodiment of the present invention, if the potential on the first pin is 3.3 volts, the memory management circuit does not turn on the device sleep function of the memory storage device.

In an exemplary embodiment of the invention, the predetermined logic potential is different from the first logic potential.

Based on the above, the method for detecting a rewritable non-volatile memory module, the memory control circuit unit, and the memory storage device of the above exemplary embodiment confirm the memory storage device by receiving an enable device sleep function command. Whether the device sleep signal pin is correctly electrically connected to the pin having the support device sleep signal protocol, thereby effectively avoiding accidentally entering the sleep mode.

The above described features and advantages of the invention will be apparent from the following description.

1000‧‧‧Host system

1100‧‧‧ computer

1102‧‧‧Microprocessor

1104‧‧‧ Random access memory

1106‧‧‧Input/output devices

1108‧‧‧System Bus

1110‧‧‧Data transmission interface

1202‧‧‧ Mouse

1204‧‧‧ keyboard

1206‧‧‧ display

1208‧‧‧Printer

1212‧‧‧USB flash drive

1214‧‧‧ memory card

1216‧‧‧ Solid State Drive

1310‧‧‧ digital camera

1312‧‧‧SD card

1314‧‧‧MMC card

1316‧‧‧ Memory Stick

1318‧‧‧CF card

1320‧‧‧Embedded storage device

100‧‧‧ memory storage device

102‧‧‧Connecting interface unit

102a‧‧‧Data Connection Interface

102b‧‧‧Power connection interface

104‧‧‧Memory Control Circuit Unit

106‧‧‧Reusable non-volatile memory module

202‧‧‧Memory Management Circuit

204‧‧‧Host interface

206‧‧‧ memory interface

208‧‧‧buffer memory

210‧‧‧Power Management Circuit

212‧‧‧Error checking and correction circuit

410(0)~410(N)‧‧‧ physical erasing unit

602‧‧‧ Busbar connection interface

604‧‧‧Power supply connection interface

612‧‧‧Device sleep signal pin

622‧‧‧Signal output pin

S701, S703, S705, S707, S709, S711, S713, S715‧‧‧ steps of the sleep mode starting method

FIG. 1 illustrates a host system and a memory storage device according to an exemplary embodiment.

2 is a schematic diagram of a computer, an input/output device, and a memory storage device according to an exemplary embodiment of the invention.

FIG. 3 is a diagram of a host system and a memory bank according to an exemplary embodiment of the invention. Schematic diagram of the storage device.

4 is a schematic block diagram showing the memory storage device shown in FIG. 1.

FIG. 5 is a schematic block diagram of a memory control circuit unit according to an exemplary embodiment.

FIG. 6 is a schematic diagram showing an example of connecting a bus and a power supply connection interface between a memory storage device and a host system according to an exemplary embodiment of the invention.

FIG. 7 is a flowchart of a sleep mode startup method according to an exemplary embodiment.

In general, a memory storage device (also referred to as a memory storage system) includes a rewritable non-volatile memory module and controller (also referred to as a control circuit). Typically, the memory storage device is used with a host system to enable the host system to write data to or read data from the memory storage device.

FIG. 1 illustrates a host system and a memory storage device according to an exemplary embodiment.

Referring to FIG. 1, the host system 1000 generally includes a computer 1100 and an input/output (I/O) device 1106. The computer 1100 includes a microprocessor 1102, a random access memory (RAM) 1104, a system bus 1108, and a data transmission interface 1110. The input/output device 1106 includes a mouse 1202, a keyboard 1204, a display 1206, and a printer 1208 as shown in FIG. It must be understood that The device shown in FIG. 2 is a non-limiting input/output device 1106, and the input/output device 1106 may further include other devices.

In the embodiment of the present invention, the memory storage device 100 is coupled to other components of the host system 1000 through the data transmission interface 1110. The data can be written to or read from the memory storage device 100 by the operation of the microprocessor 1102, the random access memory 1104, and the input/output device 1106. For example, the memory storage device 100 may be a rewritable non-volatile memory storage device such as a flash drive 1212, a memory card 1214, or a solid state drive (SSD) 1216 as shown in FIG. 2.

In general, host system 1000 is any system that can substantially cooperate with memory storage device 100 to store data. Although in the present exemplary embodiment, the host system 1000 is illustrated by a computer system, in another exemplary embodiment of the present invention, the host system 1000 may be a digital camera, a video camera, a communication device, an audio player, or a video player. And other systems. For example, when the host system is a digital camera (camera) 1310, the rewritable non-volatile memory storage device uses the SD card 1312, the MMC card 1314, the memory stick 1316, the CF card 1318 or Embedded storage device 1320 (shown in Figure 3). The embedded storage device 1320 includes an embedded multimedia card (Embedded MMC, eMMC). It is worth mentioning that the embedded multimedia card is directly coupled to the substrate of the host system.

4 is a schematic block diagram showing the memory storage device shown in FIG. 1.

Referring to FIG. 4, the memory storage device 100 includes a connection interface unit 102, a memory control circuit unit 104, and a rewritable non-volatile memory module. 106.

The connection interface unit 102 includes a data connection interface 102a and a power connection interface. The data connection interface 102a is used to connect to the bus connection interface of the host system 1000, and the power connection interface 102b is used to connect to the power supply connection interface of the host system 1000. In particular, in the exemplary embodiment, the data connection interface 102a can be used to receive at least one set of differential signals, and the power connection interface 102b has a device sleep signal pin to support the device sleep signal (device). Sleep signal) agreement. In another exemplary embodiment, the power connection interface 102b is configured to receive up to two different input power sources, such as 5 volts and 12 volts. In another exemplary embodiment, the power connection interface 102b is not used to receive an input power of 3.3 volts. Specifically, the host system 1000 supporting the protocol for device hibernation can control the signal output pin of the power supply connection interface coupled to the device sleep signal pin to indicate that the memory storage device 100 begins to enter the sleep mode. For example, if the host system 1000 controls the potential signal on the signal output pin of the power supply connection interface coupled to the device sleep signal pin to be at the first logic potential, the potential of the device sleep signal pin of the power connection interface 102b The signal will also be at the first logic potential so that the memory storage device 100 will begin to enter the sleep mode accordingly; and if the host system 1000 controls the potential on the signal output pin of the power supply connection interface coupled to the device sleep signal pin When the signal is at the second logic potential, the potential signal on the device sleep signal pin of the power connection interface 102b is also at the second logic potential so that the memory storage device 100 operates normally. Here, the first logic potential and the second logic potential can be set according to different designs, for example, in this model In an embodiment, the first logic potential is a high logic potential and the second logic potential is a low logic potential opposite to the first logic potential, and in the exemplary embodiment, the high logic potential is a voltage level higher than a predetermined In the case of a value, it can be judged as a high logic potential, and conversely, when the low logic potential is a voltage level lower than a predetermined value, it can be determined as a low logic potential.

In the present exemplary embodiment, the connection interface unit 102 is compatible with the Serial Advanced Technology Attachment (SATA) standard. However, it must be understood that the present invention is not limited thereto, and the connection interface unit 102 may also be a Parallel Advanced Technology Attachment (PATA) standard, Institute of Electrical and Electronic Engineers (IEEE) 1394. Standard, high-speed Peripheral Component Interconnect Express (PCI Express) standard, Universal Serial Bus (USB) standard, Ultra High Speed-I (UHS-I) interface standard, ultra-high speed Second generation (Ultra High Speed-II, UHS-II) interface standard, Secure Digital (SD) interface standard, Memory Stick (MS) interface standard, Multimedia Memory Card (MMC) interface standard , Compact Flash (CF) interface standard, Integrated Device Electronics (IDE) standard or other suitable standards. In this exemplary embodiment, the connection interface unit may be packaged in a chip with the memory control circuit unit or disposed outside a wafer including the memory control circuit unit.

The memory control circuit unit 104 is configured to perform a hard type or a firmware type The plurality of logic gates or control commands are implemented, and the writing, reading and erasing of data are performed in the rewritable non-volatile memory module 106 according to the instructions of the host system 1000.

The rewritable non-volatile memory module 106 is coupled to the memory control circuit unit 104 and is used to store data written by the host system 1000. The rewritable non-volatile memory module 106 has physical erase units 410(0)-410(N). For example, the physical erase units 410(0)-410(N) may belong to the same memory die or belong to different memory dies. Each physical erasing unit has a plurality of physical stylized units, wherein the physical stylized units belonging to the same physical erasing unit can be independently written and erased simultaneously. However, it must be understood that the present invention is not limited thereto, and each physical erasing unit may be composed of 64 physical stylized units, 256 physical stylized units, or any other physical stylized units.

In more detail, the physical erase unit is the smallest unit of erase. That is, each physical erase unit contains one of the smallest number of erased memory cells. The entity stylized unit is the smallest unit that is stylized. That is, the entity stylized unit is the smallest unit that writes data. Each entity stylized unit typically includes a data bit area and a redundant bit area. The data bit area includes a plurality of physical access addresses for storing user data, and the redundant bit area is used to store system data (eg, control information and error correction codes). In this exemplary embodiment, each physical stylized unit has four physical access addresses in the data bit area, and one physical access address has a size of 512 bytes. However, in other exemplary embodiments, the data bit area may also contain a greater or lesser number of physical access addresses, and the present invention does not limit the physical access bits. The size and number of addresses. For example, in an exemplary embodiment, the physical erasing unit is a physical block, and the physical stylized unit is a physical page or a physical sector, but the invention is not limited thereto.

In the present exemplary embodiment, the rewritable non-volatile memory module 106 is a multi-level cell (MLC) NAND-type flash memory module (ie, two bits can be stored in one memory cell). Metadata flash memory module). However, the present invention is not limited thereto, and the rewritable non-volatile memory module 106 may also be a single-level memory cell (SLC) NAND-type flash memory module (ie, one memory cell can be stored in 1). a flash memory module with bit data, a Trinary Level Cell (TLC) NAND flash memory module (ie, a flash memory that can store 3 bits of data in a memory cell) Body module), other flash memory modules or other memory modules with the same characteristics.

FIG. 5 is a schematic block diagram of a memory control circuit unit according to an exemplary embodiment.

Referring to FIG. 5, the memory control circuit unit 104 includes a memory management circuit 202, a host interface 204, and a memory interface 206.

The memory management circuit 202 is used to control the overall operation of the memory control circuit unit 104. Specifically, the memory management circuit 202 has a plurality of control commands, and when the memory storage device 100 operates, such control commands are executed to perform operations such as writing, reading, and erasing data.

In the present exemplary embodiment, the control instructions of the memory management circuit 202 are implemented in a firmware version. For example, the memory management circuit 202 has a microprocessor list Meta (not shown) and read-only memory (not shown), and such control instructions are burned into the read-only memory. When the memory storage device 100 is in operation, such control commands are executed by the microprocessor unit to perform operations such as writing, reading, and erasing data.

In another exemplary embodiment of the present invention, the memory management circuit 202 controls The programming instructions may also be stored in a particular area of the rewritable non-volatile memory module 106 (eg, a system area dedicated to storing system data in the memory module). In addition, the memory management circuit 202 has a microprocessor unit (not shown), a read-only memory (not shown), and a random access memory (not shown). In particular, the read-only memory has a drive code, and when the memory control circuit unit 104 is enabled, the microprocessor unit first executes the drive code segment to be stored in the rewritable non-volatile memory module. The control command in 106 is loaded into the random access memory of the memory management circuit 202. After that, the microprocessor unit will run these control commands to perform data writing, reading and erasing operations.

In addition, in another exemplary embodiment of the present invention, the control command of the memory management circuit 202 can also be implemented in a hardware format. For example, the memory management circuit 202 includes a microcontroller, a memory cell management circuit, a memory write circuit, a memory read circuit, a memory erase circuit, and a data processing circuit. The memory cell management circuit, the memory write circuit, the memory read circuit, the memory erase circuit and the data processing circuit are coupled to the microcontroller. The memory cell management circuit is configured to manage the physical erasing unit of the rewritable non-volatile memory module 106; the memory writing circuit is configured to issue a write command to the rewritable non-volatile memory module 106. Writing data to the rewritable non-volatile memory module 106; the memory reading circuit is used to The rewritable non-volatile memory module 106 issues a read command to read data from the rewritable non-volatile memory module 106; the memory erase circuit is used to rewritable non-volatile memory module 106, the erase command is issued to erase the data from the rewritable non-volatile memory module 106; and the data processing circuit is configured to process the data to be written to the rewritable non-volatile memory module 106 and The data read in the rewritable non-volatile memory module 106.

The host interface 204 is coupled to the memory management circuit 202 and is coupled to the connection interface unit 102 for receiving and identifying the instructions and data transmitted by the host system 1000. That is to say, the instructions and data transmitted by the host system 1000 are transmitted to the memory management circuit 202 through the host interface 204. In the present exemplary embodiment, host interface 204 is compatible with the SATA standard. However, it must be understood that the present invention is not limited thereto, and the host interface 204 may also be compatible with the PATA standard, the IEEE 1394 standard, the PCI Express standard, the USB standard, the UHS-I interface standard, the UHS-II interface standard, the SD standard, MS standard, MMC standard, CF standard, IDE standard or other suitable data transmission standard.

The memory interface 206 is coupled to the memory management circuit 202 and is used to access the rewritable non-volatile memory module 106. That is, the data to be written to the rewritable non-volatile memory module 106 is converted to a format acceptable to the rewritable non-volatile memory module 106 via the memory interface 206.

In an exemplary embodiment of the present invention, the memory control circuit unit 104 further includes a buffer memory 208, a power management circuit 210, and an error check and correction circuit 212.

The buffer memory 208 is coupled to the memory management circuit 202 and is used to temporarily store data and instructions from the host system 1000 or data from the rewritable non-volatile memory module 106.

The power management circuit 210 is coupled to the memory management circuit 202 and is used to control the power of the memory storage device 100.

The error checking and correction circuit 212 is coupled to the memory management circuit 202 and is used to perform error checking and correction procedures to ensure the correctness of the data. Specifically, when the memory management circuit 202 receives a write command from the host system 1000, the error check and correction circuit 212 generates a corresponding error check and correction code for the data corresponding to the write command (Error Checking and Correcting). Code, ECC Code), and the memory management circuit 202 writes the data corresponding to the write command and the corresponding error check and correction code into the rewritable non-volatile memory module 106. Thereafter, when the memory management circuit 202 reads the data from the rewritable non-volatile memory module 106, the error check and correction code corresponding to the data is simultaneously read, and the error check and correction circuit 212 is based on the error. Check and calibration code Perform error checking and calibration procedures on the data read.

FIG. 6 is a schematic diagram showing an example of connecting a bus and a power supply connection interface between a memory storage device and a host system according to an exemplary embodiment of the invention.

Referring to FIG. 6, the busbar connection interface 602 is a control chipset (not shown) electrically connected to the host system 1000, and is connected to the data connection interface 102a of the memory storage device 100. The power supply connection interface 604 is electrically connected to the host The power supply (not shown) of the system 1000 is connected to the power connection interface 102b of the memory storage device 100.

As described above, in the present exemplary embodiment, the power connection interface 102b has a device sleep signal pin 612. When the power supply connection interface 604 is electrically connected to the power connection interface 102b, the signal output pin 622 of the power supply connection interface 604 is provided. It is coupled to the device sleep signal pin 612. For example, when the host system 1000 is powered up, the signal output pin 622 outputs a 3.3 volt voltage signal to provide the power required by the coupled device.

In particular, as described above, if the signal output pin 622 electrically connected to the device sleep signal pin 612 is used to support the device sleep signal protocol, the host system 100 is controlled in a state where the memory storage device 100 is normally operated. The potential signal on the signal output pin 622 is at the second logic potential (ie, the memory storage device 100 is not allowed to enter the device sleep mode), so that the potential signal on the device sleep signal pin 612 is also at the second logic potential. Accordingly, the memory control circuit unit 104 (or the memory management circuit 202) operates normally in accordance with the state of the device sleep signal pin 612. If the signal output pin 622 is not used to support the device sleep signal protocol, the host system 1000 does not use the signal output pin 622 to output the device sleep control signal. Therefore, after the host system 1000 is powered on, if the signal output pin is powered The potential signal at 622 is at the first logic potential, which may cause the memory storage device 100 to malfunction and directly enter the device sleep mode.

Therefore, if the host system 1000 supports the device sleep signal protocol, in a specific specification, the signal output pin for connecting the device sleep signal pin 612 is connected. The 622 should be properly electrically connected to the corresponding pin in the chipset (not shown) of the host system 1000 to control the memory storage device 100 to enter the sleep mode. In the present exemplary embodiment, when the host system 1000 transmits the enable device sleep function command to the memory storage device 100 through the bus bar connection interface 602, the memory control circuit unit 104 (or the memory management circuit 202) determines the device sleep signal. Whether the potential signal on pin 612 is at the second logic potential. If the potential signal on the device sleep signal pin 612 is at the second logic potential, the memory control circuit unit 104 determines that the device sleep signal pin 612 has been correctly connected to the signal output pin of the support device sleep signal protocol. On the other hand, if the potential signal on the sleep signal pin 612 of the device is at the first logic potential, the memory control circuit unit 104 determines that the device sleep signal pin 612 is not connected to the signal output pin of the support device sleep signal protocol.

In particular, if the device sleep signal pin 612 is properly connected to the signal output pin of the support device sleep signal protocol, the memory control circuit unit 104 (or the memory management circuit 202) turns on the device sleep function, and The host system 1000 instructs to start entering the sleep mode by the signal output pin 622 of the device sleep signal pin 612 (for example, when the potential of the control signal output pin 622 is changed from the second logic potential to the first logic potential), the memory control Circuit unit 104 (or memory management circuit 202) initiates a sleep mode such that memory storage device 100 ceases to operate and is in a low power state.

FIG. 7 is a flowchart of a sleep mode startup method according to an exemplary embodiment.

Referring to FIG. 7, in step S701, the memory control circuit unit 104 (or the memory management circuit 202) receives the enable device sleep function instruction through the data connection interface 102a, and in step S703, the memory control circuit unit 104 ( Or the memory management circuit 202) determines whether the potential signal on the device sleep signal pin 612 on the power connection interface 102b is at a second logic potential opposite to the first logic potential.

If the potential signal on the device sleep signal pin 612 on the power connection interface 102b of the memory storage device 100 is at the second logic potential, the memory control circuit unit 104 (or the memory management circuit 202) will Turn on the device sleep function.

Next, in step S707, the memory control circuit unit 104 (or the memory management circuit 202) detects whether the state of the device sleep signal pin 612 on the power connection interface 102b is changed from the second logic potential to the first logic potential. .

If it is detected in step S707 that the state of the device sleep signal pin 612 on the power connection interface 102b is changed from the second logic potential to the first logic potential, in step S709, the memory control circuit unit 104 (or memory) Management circuit 202) will begin to enter sleep mode.

If it is not detected in step S707 that the state of the device sleep signal pin 612 on the power connection interface 102b is changed from the second logic potential to the first logic potential, step S707 is repeatedly performed.

After step S709, in step S711, the memory control circuit unit 104 (or the memory management circuit 202) detects whether the state of the device sleep signal pin 612 on the power connection interface 102b changes from the first logic potential to the second. Logic potential.

If the device on the power connection interface 102b is detected in step S711 When the state of the sleep signal pin 612 is changed from the first logic potential to the second logic potential, the memory control circuit unit 104 (or the memory management circuit 202) returns to the operation mode from the sleep mode in step S713, and Then step S707 will be executed.

If it is not detected in step S711 that the state of the device sleep signal pin 612 on the power connection interface 102b is changed from the first logic potential to the second logic potential, step S711 is repeatedly performed.

If it is determined in step S703 that the potential signal on the device sleep signal pin 612 on the power connection interface 102b of the memory storage device 100 is not at the second logic potential, in step S715, the memory control circuit unit 104 (or memory) The body management circuit 202) does not turn on the device sleep function.

It should be noted that, in the exemplary embodiment, the memory control circuit unit 104 (or the memory management circuit 202) determines whether to turn on the device according to the potential signal on the device sleep signal pin 612 on the power connection interface 102b. Sleep function. However, the present invention is not limited thereto. In another exemplary embodiment of the present invention, the memory control circuit unit 104 (or the memory management circuit 202) may also determine whether to turn on the device sleep according to other pins on the power connection interface 102b. Features. For example, when the enable device sleep function command is received from the host system 1000 through the host interface 204, the memory control circuit unit 104 (or the memory management circuit 202) determines the reserved unused pin of the power connection interface 102b (hereinafter referred to as Whether the potential signal on the first pin is at a predetermined logic potential. If it is judged that the potential signal on the first pin is in the predetermined At the logic potential, the memory control circuit unit 104 (or the memory management circuit 202) turns on the device sleep function of the memory storage device 100, and detects the device sleep signal connection of the power connection interface 102b after the device sleep function is turned on. When the potential on the pin is at the first logic potential, it begins to enter sleep mode. In particular, if the potential on the first pin is 3.3 volts, the memory control circuit unit 104 (or the memory management circuit 202) does not turn on the device sleep function of the memory storage device 100.

In summary, the method for detecting a rewritable non-volatile memory module, the memory control circuit unit, and the memory storage device according to an exemplary embodiment of the present invention recognize power by receiving an enable device sleep function command. The logic potential state of the device sleep signal pin on the connection interface determines whether the signal output pin connected to the device sleep signal pin supports the device sleep signal protocol, thereby avoiding false positives and entering the sleep mode.

S701, S703, S705, S707, S709, S711, S713, S715‧‧‧ steps of the sleep mode starting method

Claims (23)

A sleep mode starting method for a memory storage device, the sleep mode starting method comprising: (a) determining a device sleep signal of the memory storage device when receiving an enable device sleep function command from a host system Whether the potential signal on the pin is at a second logic potential different from a first logic potential (b), if in step (a), determining the device sleep signal pin on the power connection interface of the memory storage device When the upper potential signal is at the second logic potential, turning on a device sleep function of the memory storage device; (c) detecting the memory storage device after the sleep function of the device is turned on Whether the potential signal on the device sleep signal pin changes from the second logic potential to the first logic potential; and (d) if the device sleep signal pin of the memory storage device is detected in step (c) When the upper potential signal changes from the second logic potential to the first logic potential, the memory storage device is activated to enter the sleep mode. The method for starting a sleep mode according to claim 1, further comprising: if it is determined in step (a) that the device sleep signal pin of the memory storage device is not at the second logic potential, The device sleep function of the memory storage device. The sleep mode starting method of claim 1, wherein the first logic potential is a high logic potential and the second logic potential is a low logic potential. The sleep mode activation method of claim 1, further comprising: detecting whether the potential signal on the sleep signal pin of the memory storage device is from the memory storage device after entering the sleep mode Changing the first logic potential to the second logic potential; and if the potential signal on the sleep signal pin of the device of the memory storage device is detected to change from the first logic potential to the second logic potential, The memory storage device returns from the sleep mode to an operational mode. The sleep mode activation method of claim 1, wherein the device sleep signal pin is disposed on a power connection interface of the memory storage device. A memory control circuit unit for controlling a memory storage device includes: a host interface for electrically connecting to a host system; and a memory interface for coupling to a rewritable non-volatile memory And a memory management circuit coupled to the memory interface and the host interface, and configured to receive an enable device sleep function command from the host system through the host interface, wherein the host device is accessed from the host through the host interface When the system receives the enable device sleep function command, the memory management circuit determines whether the potential signal on a device sleep signal pin of the memory storage device is at a second logic potential different from a first logic potential. If it is determined that the device sleep signal pin is at the second logic potential, the memory management circuit turns on a device sleep function of the memory storage device, wherein the memory is turned on after the device sleep function of the memory storage device is turned on. The body management circuit is further configured to detect whether the potential signal on the sleep signal pin of the device changes from the second logic potential to a first logic potential, and if the potential signal on the sleep signal pin of the device is detected from the first When the two logic potentials change to the first logic potential, the memory management circuit begins to enter the sleep mode. The memory control circuit unit of claim 6, wherein the potential signal on the sleep signal pin of the device is not in a state after receiving the enable device sleep function command from the host system through the data connection interface. At the second logic potential, the memory management circuit does not turn on the device sleep function of the memory storage device. The memory control circuit unit of claim 6, wherein the first logic potential is a high logic potential and the second logic potential is a low logic potential. The memory control circuit unit of claim 6, wherein the power connection interface is a serial advanced accessory power connection interface and the data connection interface is a serial advanced accessory connection interface. The memory control circuit unit of claim 6, wherein the signal output pin is disposed in a power supply connection interface of the host system, and the signal output pin outputs a 3.3 volt voltage. The memory control circuit unit of claim 6, wherein the memory management circuit is further configured to detect a potential signal on the sleep signal pin of the memory storage device after entering the sleep mode. Whether to change from the first logic potential to the second logic potential, wherein if the potential signal on the sleep signal pin of the device of the memory storage device is detected to change from the first logic potential to the second logic potential The memory management circuit is further configured to return from the sleep mode to an operation mode. The memory control circuit unit of claim 6, wherein the device sleep signal pin is disposed on a power connection interface of the memory storage device. A memory storage device includes: a connection interface unit for coupling to a host system, the connection interface unit includes a data connection interface; and a rewritable non-volatile memory module having multiple physical erases And a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module, wherein the memory control circuit unit is configured to receive from the host system through the data connection interface An enable device sleep function command, wherein when the enable device sleep function command is received from the host system through the data connection interface, the memory control circuit unit determines whether a potential signal on a device sleep signal pin is in a a second logic power with a logic potential opposite Bit, if it is determined that the potential signal on the sleep signal pin of the device is at the second logic potential, the memory control circuit unit turns on a device sleep function, wherein after the device sleep function is turned on, the memory control circuit unit is further The device detects whether the potential signal on the sleep signal pin of the device changes from the second logic potential to a first logic potential, and if the potential signal on the sleep signal pin of the device is detected to be changed from the second logic potential When the first logic potential is reached, the memory control circuit unit begins to enter the sleep mode. The memory storage device of claim 13, wherein the potential signal on the sleep signal pin of the device is not in the state after receiving the enable device sleep function command from the host system through the data connection interface. At the second logic potential, the memory control circuit unit does not turn on the device sleep function of the memory storage device. The memory storage device of claim 13, wherein the first logic potential is a high logic potential and the second logic potential is a low logic potential. The memory storage device of claim 13, wherein the power connection interface is a serial advanced accessory power connection interface and the data connection interface is a serial advanced accessory connection interface. The memory storage device of claim 13, wherein the signal output pin is disposed in a power supply connection interface of the host system, and the The signal output pin outputs a 3.3 volt voltage. The memory storage device of claim 13, wherein the memory control circuit unit is further configured to detect, after entering the sleep mode, whether the potential signal on the sleep signal pin of the device is from the first logic The potential is changed to the second logic potential, wherein the memory control circuit unit is further used to detect if the potential signal on the sleep signal pin of the device is changed from the first logic potential to the second logic potential The sleep mode returns to an operational mode. The memory storage device of claim 13, wherein the connection interface unit further comprises a power connection interface and the device sleep signal pin is disposed on the power connection interface. A memory control circuit unit for controlling a memory storage device includes: a host interface for electrically connecting to a host system; and a memory interface for coupling to a rewritable non-volatile memory And a memory management circuit coupled to the memory interface and the host interface, and configured to receive an enable device sleep function command from the host system through the host interface, wherein the host media mask has a data connection interface And a power connection interface for receiving at least one set of differential signals transmitted by a first transmission line, the power connection interface for receiving at least one input transmitted by a second transmission line The first transmission line and the second transmission line are independent of each other, wherein the memory management circuit determines a first pin of the power connection interface when receiving the enable device sleep function command from the host system through the host interface Whether the upper potential signal is at a predetermined logic potential, and if it is determined that the potential signal on the first pin is at the predetermined logic potential, the memory management circuit turns on a device sleep function of the memory storage device, wherein the After the device is in the memory function, the memory management circuit is further configured to detect whether the potential signal on the sleep signal pin of the device is a first logic potential, if the device is detected on the sleep signal pin. When the potential signal is the first logic potential, the memory management circuit begins to enter the sleep mode. The memory control circuit unit of claim 20, wherein the first pin is different from the device sleep signal pin of the power connection interface. The memory control circuit unit of claim 20, wherein the memory management circuit does not turn on the device sleep function of the memory storage device if the potential on the first pin is 3.3 volts. The memory control circuit unit of claim 20, wherein the predetermined logic potential is different from the first logic potential.