TW201520641A - Organic light emitting diode pixel structure - Google Patents

Abstract

An organic light emitting diode pixel structure including a first scan line, a data line, a first power line, a first light emitting element, a second light emitting element, a first transistor, a second transistor, a third transistor and a first capacitor is provided. The first light emitting element and the second light emitting element have different light emitting areas. The controlling terminal and the first terminal of the first transistor are connected to the first scan line and the data line. The first terminal and the second terminal of the second transistor are connected to the first power line and one end of the first light emitting element. The first terminal and the second terminal of the third transistor are connected to the first power line and the second light emitting element. The controlling terminal of the third transistor is extended outward to be connected to the first light emitting element. The second terminal of the first transistor and the controlling terminal of the second transistor are connected to the first capacitor.

Description

Organic light emitting diode structure

The invention relates to an organic light emitting diode (Organic Light) Emitting Diode, OLED) pixel structure, and in particular an OLED pixel structure that can compensate for the degradation of the brightness of the OLED element due to prolonged use.

In today's fast-changing technology era, the Organic Light Emitting Diode (OLED) technology has been developed and used in many display applications, such as televisions, computer screens, notebook computers, Mobile phone or personal digital assistant. Generally, an OLED display includes a plurality of OLED pixel circuits arranged in a matrix, and each OLED pixel circuit includes an OLED element and a corresponding driving circuit.

In general, the OLED device and its driving circuit in the OLED display need to be turned on for a long time to perform image display operations correspondingly. However, long-term enable conduction will cause the OLED element to generate a critical turn-on voltage rise and a decrease in display brightness. According to this, how to design can effectively target OLED components due to long time The compensation circuit used in the case where the critical conduction voltage rises and the display brightness decreases is one of the directions that the industry is constantly striving for.

According to the present invention, an organic light emitting diode (OLED) pixel structure includes a first scan line, a data line, a first power line, a first light emitting element, and a second light emitting element. a first transistor, a second transistor, a third transistor, and a first capacitor. The light emitting area of the first light emitting element is different from the light emitting area of the second light emitting element. The control end of the first transistor is connected to the first scan line and the first end of the first transistor is connected to the data line. The first end of the second transistor is connected to the first power line and the second end of the second transistor is connected to one end of the first light emitting element. The first end of the third transistor is connected to the first power line and the second end of the third transistor is connected to one end of the second light emitting element, and the control end of the third transistor extends outward to be connected to the first light emitting element One end. The second end of the first transistor and the control end of the second transistor are connected to one end of the first capacitor.

According to the present invention, an OLED pixel structure is proposed, wherein a circuit composed of a plurality of transistors and a plurality of capacitors includes a driving node, a pixel driving unit, a display electro-active element, and an electro-compensation unit. The pixel driving unit is coupled to the data line to receive the data voltage, and provides a driving voltage to the driving node in response to the data voltage. The display electrical component is coupled to the driving node, and the display electrical component emits light in response to the driving voltage, wherein the level of the driving voltage is related to the aging factor voltage of the display electrical component, and the aging factor voltage corresponds to the usage time of the electrical component. The electro-compensation unit is coupled to the drive node, The electro-compensation circuit includes a compensation electro-mechanism element that drives the compensation electro-element element to emit light according to the driving voltage, thereby aging degradation of the display electro-element element via the compensation electro-mechanism element.

In order to provide a better understanding of the above and other aspects of the present invention, the preferred embodiments of the present invention are described in detail below.

1‧‧‧ display

12‧‧‧Data Drive

14‧‧‧Scan Drive

16‧‧‧Lighting controller

18‧‧‧ display panel

100, 200, 300‧‧‧ organic light-emitting pixel structure

102, 104‧‧‧Insulation

110, 212, 312‧‧‧ first scan line

120, 220, 320‧‧‧ data lines

130, 230, 330‧‧‧ first power cord

140, 240, 340‧‧‧ first light-emitting elements

142, 144‧‧‧ one end of the first illuminating element

146, 156‧ ‧ luminescent layer

150, 250, 350‧‧‧ second light-emitting elements

152, 154‧‧‧ One end of the second illuminating element

160, 260, 360‧‧‧ first transistor

160C, 170C, 180C‧‧‧ channels

160D, 170D, 180D‧‧‧ bungee

160G, 170G, 180G‧‧‧ gate

160S, 170S, 180S‧‧‧ source

170, 270, 370‧‧‧ second transistor

180, 280, 380‧‧‧ third transistor

190, 292, 392‧‧‧ first capacitor

192, 194‧‧‧ one end of the first capacitor

214, 314‧‧‧ second scan line

216, 316‧‧‧ third scan line

281, 381‧‧‧ fourth transistor

283, 383‧‧‧ fifth transistor

285, 385‧‧‧ sixth transistor

287, 387‧‧‧ seventh transistor

289, 389‧‧‧ eighth transistor

294, 394‧‧‧ second capacitor

296, 396‧‧‧ third capacitor

332‧‧‧second power cord

334‧‧‧ third power cord

A-A’, B-B’‧‧‧ cut line

W1~W14‧‧‧Contact window structure

P(i,j), 10, 20, 30‧‧‧ OLED pixel circuits

U1‧‧‧Pixel Drive Unit

U2‧‧‧Display electro-active components

U3‧‧‧Electrical compensation unit

M1-M3, M11-M13, M21-M25, M31-M38‧‧‧O crystal

C, C1-C3‧‧‧ capacitor

Nc, Nc1, Nc2, Nc1-Nc3‧‧‧ nodes

C2_E1, C2_E2, C3_E1, C3_E2‧‧‧ endpoints

Nd‧‧‧ drive node

D1, D2‧‧‧ OLED components

S(1)-S(M)‧‧‧ scan signal

S(i)‧‧‧ level scan signal

S(i-1)‧‧‧Pre-level scan signal

D(1)-D(N)‧‧‧Information Signal

E(i)‧‧‧This level of illuminating signal

E(1)-E(M)‧‧‧ illuminating signal

Vdata‧‧‧ data voltage

Vdr‧‧‧ drive voltage

VDD‧‧‧High potential quasi-reference voltage

VSS‧‧‧low potential quasi-reference voltage

The following drawings are a part of the specification of the invention, and illustrate the embodiments of the invention

1 is a block diagram of a display of an organic light emitting diode pixel circuit to which an embodiment of the present invention is applied.

2 is a block diagram of an organic light emitting diode pixel circuit P(i, j).

3A is a circuit diagram of an organic light emitting diode pixel circuit in accordance with a first embodiment of the present invention.

FIG. 3B is a schematic diagram of a pixel structure of an organic light emitting diode according to a first embodiment of the present invention.

3C is a schematic cross-sectional view of the organic light emitting diode pixel circuit of FIG. 3B taken along line A-A' and B-B'.

4 is a circuit diagram of an organic light emitting diode pixel circuit in accordance with a second embodiment of the present invention.

FIG. 5 is a diagram showing an organic light emitting diode pixel structure according to a second embodiment of the present invention. A schematic diagram of a bottom-emitting design.

6 is a schematic diagram showing an upper illumination type design of an organic light emitting diode pixel structure according to a second embodiment of the present invention.

The organic light emitting diode (OLED) pixel circuit of the embodiment of the invention includes a display driving device as a display operation and a pixel driving unit for driving a display voltage to drive the display device, wherein the driving voltage level Related to the aging factor voltage of the display electro-active element. The OLED pixel circuit of the embodiment of the present invention further includes an electro-compensation unit for driving the compensation electro-emission element to emit light according to the driving voltage, thereby performing aging degradation compensation on the display electro-element element via the compensation electro-mechanism element.

Please refer to FIG. 1 , which is a block diagram showing a display of an OLED pixel circuit to which an embodiment of the present invention is applied. For example, the display 1 includes a data driver 12, a scan driver 14, a light emitting controller 16, and a display panel 18. Display panel 18 includes an array of pixels having, for example, M x N OLED pixel circuits P(1,1)-P(M,N), M and N being natural numbers greater than one. The data driver 12, the scan driver 14 and the illumination controller 16 are respectively configured to provide data signals D(1)-D(N), scan signals S(1)-S(M), and illuminating signals E(1)-E, respectively. (M) to the display panel 18 to drive each of the OLED pixel circuits P(1, 1)-P(M, N) to perform a screen display operation.

Since each of the OLED pixel circuits P(1, 1)-P(M, N) in the display panel 18 has substantially the same circuit structure and operation, next only to the display panel 18 The single OLED pixel circuit P(i, j) is taken as an example to further explain the circuit structure and operation of each OLED pixel circuit P(1,1)-P(M,N) in the display panel 18, wherein i and j are natural numbers less than or equal to M and less than or equal to N, respectively.

Please refer to FIG. 2, which shows the organic light-emitting diode P(i, j) of FIG. Block diagram. The OLED pixel circuit P(i,j) includes a driving node Nd, a pixel driving unit u1, a display electro-functional element u2, and an electro-compensation unit u3. The pixel driving unit u1 is coupled to the data line to receive the data voltage Vdata, and provides the driving voltage Vdr to the driving node Nd in response to the data voltage Vdata.

The display electro-active element u2 is coupled to the driving node Nd and emits light in response to the driving voltage Vdr, wherein the display electro-active element u2 has an aging factor voltage Vaging, which determines the level of the driving voltage Vdr, for example. For example, the display element u2 is an OLED element, and the aging factor voltage Vaging is, for example, the critical turn-on voltage of the OLED element. The critical turn-on voltage of the OLED device rises with the long-term use of the OLED device.

The electro-compensation unit u3 is coupled to the drive node Nd and includes a compensation electro-mechanism element therein. The electro-compensation unit u3 drives the compensating electro-element element to emit light according to the driving voltage Vdr, whereby the display electro-sensitive element u2 is subjected to aging degradation compensation via the compensating electro-functional element. The electro-compensation unit u3 further includes, for example, a compensation driving unit for determining the auxiliary driving current to drive the compensation electro-emission element to emit light according to the driving voltage Vdr.

Next, several operational examples are proposed for the OLED pixel circuit P(i,j) to further detail each subunit in the OLED pixel circuit P(i,j).

First embodiment

Referring to FIG. 3A, a detailed circuit diagram of an organic light emitting diode pixel circuit in accordance with a first embodiment of the present invention is shown. In the OLED pixel circuit 10 of the present embodiment, the pixel driving unit u1 has a circuit structure of 2T1C, including, for example, a node Nc, transistors M1, M2, and a capacitor C; the display electro-element element u2 includes an OLED element D1; an electro-compensation unit U3 comprises a transistor M3 and an OLED element D2, wherein the OLED element D2 is used to implement a compensation electro-mechanism element, and the transistor M3 is used to implement an auxiliary driving unit.

Regarding the element characteristics and circuit operation of the organic light-emitting diode pixel circuit of the first embodiment, please refer to US Pat. No. 201202, 462, 062 A1, which is hereby incorporated by reference.

The specific structural design of the organic light emitting diode pixel circuit of the first embodiment is as shown in FIGS. 3B and 3C. In detail, FIG. 3B is a schematic diagram of a pixel structure of an organic light emitting diode according to a first embodiment of the present invention, and FIG. 3C is a cross-sectional line A-A' and a B-B' of the organic light emitting diode pixel structure of FIG. Schematic diagram of the section. Referring to FIG. 3B and FIG. 3C simultaneously, the organic light emitting diode pixel structure 100 includes a first scan line 110, a data line 120, a first power line 130, a first light emitting element 140, a second light emitting element 150, and a first transistor. 160, a second transistor 170, a third transistor 180, and a first capacitor 190. Specifically, the first transistor 160, the second transistor 170, and the third transistor 180 are respectively the transistors M1, M2, and M3 in FIG. 3, and the first illuminating element 140 and the second illuminating element 150 are respectively FIG. The OLED elements D1 and D2, the first scan line 110, the data line 120 and the first power line 130 are respectively used to transfer the The current level scan signal S(i), the data voltage Vdata, and the high potential reference voltage Vdd, and the first capacitor 190 is the capacitor C in FIG.

As can be seen from FIG. 3B, the first scan line 110 intersects the data line 120 and the A power line 130 encloses a rectangular area, and the first light-emitting element 140, the second light-emitting element 150, the first transistor 160, the second transistor 170, the third transistor 180, and the first capacitor 190 are disposed on the rectangle. In the area. In addition, the first light emitting element 140 and the second light emitting element 150 have different light emitting areas. Here, the light-emitting area of the first light-emitting element 140 is larger than the light-emitting area of the second light-emitting element 150, and the ratio of the light-emitting area of the second light-emitting element 150 and the first light-emitting element 140 is between 1/8 and 1/2, preferably 1 /4.

In addition, referring to FIG. 3B and FIG. 3C simultaneously, the first transistor 160 is The gate (control terminal) 160G is connected to the first scan line 110, the source (first end) 160S of the first transistor 160 is connected to the data line 120, and the drain (second end) 160D of the first transistor 160 Connected to one end 192 of the first capacitor 190. In addition, the source 160S and the drain 160D are respectively located on both sides of the channel 160C, and the channel 160C is located above the gate 160G.

The gate (control terminal) 170G of the second transistor 170 extends outwardly to be connected to one end 192 of the first capacitor 190. The source (first end) 170S of the second transistor 170 is connected to the first power source line 130 and the drain (second end) 170D of the second transistor 170 is connected to one end 142 of the first light emitting element 140. In addition, the source 170S and the drain 170D are respectively located on both sides of the channel 170C, and the channel 170C is located above the gate 170G.

The source (first end) 180S of the third transistor 180 is connected to the first power line The drain (second end) 180D of the third transistor 180 is connected to one end 152 of the second light emitting element 150. The gate (control terminal) 180G of the third transistor 180 extends outwardly to be connected to one end 142 of the first light emitting element 140. In addition, the source 180S and the drain 180D are respectively located on both sides of the channel 180C, and the channel 180C is located above the gate 180G. It is worth mentioning that, in order to provide the above compensation effect, the channel aspect ratio of the third transistor 180 may be set to be smaller than or equal to the channel aspect ratio of the second transistor 170.

In the present embodiment, one end 192 of the first capacitor 190 is connected to the drain 160D of the first transistor 160 and the gate 170G of the second transistor 170, and the other end 194 is connected to the first power line 130. However, in other embodiments, the other end 194 of the first capacitor 190 can be connected to another power line for transmitting a low potential reference voltage, and is not limited to being connected to the first power line 130.

In addition, the first light emitting element 140 includes two ends 142, 144 and a light emitting layer 146 between the two ends 142 and 144. Likewise, the second illuminating element 150 includes two ends 152, 154 and a luminescent layer 156 between the ends 152 and 154. As can be seen from FIG. 3C, the gates of the first transistor 160, the second transistor 170, and the third transistor 180, and the one end 192 of the first capacitor 190 are all made of the same film layer, and the insulating layer 102 covers these. member. Meanwhile, the source and the drain of the first transistor 160, the second transistor 170, and the third transistor 180, and the other end 194 of the first capacitor 190 are both made of the same film layer, and the film layer is in insulation. Between layer 102 and insulating layer 104.

In order to achieve the required electrical connection relationship, the insulating layer 102 has a contact window structure W1 to allow one end 192 of the first capacitor 180 and the first transistor 160. The bungee poles 160D are in contact with each other. The insulating layer 104 has a contact window structure W2 to bring the drain 170D of the second transistor 170 into contact with one end 142 of the first light emitting element 140. The contact window structure W3 in the insulating layer 102 and the contact window structure W4 in the insulating layer 104 communicate with each other such that one end 142 of the first light emitting element 140 and the gate 180G of the third transistor 180 are in contact with each other. In addition, the contact window structure W5 in the insulating layer 104 brings the drain 180D of the third transistor 180 into contact with one end 152 of the second light emitting element 150.

In this embodiment, one end 142 and the second of the first light emitting element 140 One end 152 of the light-emitting element 140 is made of, for example, a transparent conductive material. Therefore, the organic light emitting pixel structure 100 may be a bottom emission type pixel structure. When the other end 144 of the first illuminating element 140 and the other end 154 of the second illuminating element 150 are also made of a transparent conductive material, the organic luminescent pixel structure 100 may be a double-sided illuminating type pixel structure. However, in other embodiments, when the one end 142 of the first illuminating element 140 and the one end 152 of the second illuminating element 140 are made of an opaque conductive material, the other end 144 of the first illuminating element 140 and the second illuminating element 150 are The other end 154 will be made of a transparent conductive material to constitute a top emission type organic light emitting pixel structure.

Second embodiment

Please refer to FIGS. 4 and 5 simultaneously. FIG. 4 is a circuit diagram of an organic light emitting diode pixel circuit according to a second embodiment of the present invention.

The OLED pixel circuit 40 of the present embodiment is different from the OLED pixel circuit 10 of the first embodiment in that the pixel driving unit u1 has a different circuit structure. Further, the pixel driving unit u1 of the embodiment includes the node Nc1. Nc2, transistors M31-M37 and capacitors C1-C3, and the electro-compensation unit u3 includes a transistor M38 and an OLED element D2; wherein the transistors M31-M38 are, for example, NMOS transistors.

Element characteristics of the organic light emitting diode pixel circuit of the second embodiment For the circuit operation, please refer to US Patent No. 20120274622A1, which will not be repeated here.

Concrete Structure Design of Organic Light Emitting Diode Pixel Circuit of Second Embodiment In the bottom illumination type design is shown in Figure 5. In detail, FIG. 5 is a schematic diagram of a bottom emission type organic light emitting diode pixel structure according to a second embodiment of the present invention. Referring to FIG. 4 and FIG. 5 simultaneously, the organic light emitting diode structure 200 includes a first scan line 212, a second scan line 214, a third scan line 216, a data line 220, a first power line 230, and a first light emitting element. 240, second light-emitting element 250, first transistor 260, second transistor 270, third transistor 280, fourth transistor 281, fifth transistor 283, sixth transistor 285, seventh transistor 287, The eighth transistor 289, the first capacitor 292, the second capacitor 294, and the third capacitor 296. Specifically, the first transistor 260, the second transistor 270, the third transistor 280, the fourth transistor 281, the fifth transistor 283, the sixth transistor 285, the seventh transistor 287, and the eighth transistor 289 are respectively the transistors M31, M35, M38, M32, M33, M36, M37 and M34 in FIG. 4, and the first illuminating element 240 and the second illuminating element 250 are respectively the OLED elements D1 and D2 in FIG. 4, first The scan line 212, the second scan line 214, and the third scan line 216 are respectively used to transmit the first-level scan signal S(i), the previous-stage scan signal S(i-1), and the local-level illumination signal E(i) in FIG. The data line 220 and the first power line 130 are respectively used to transmit the data voltage Vdata and the high potential reference voltage in FIG. Vdd, and the first capacitor 292, the second capacitor 294, and the third capacitor 296 are capacitors C1, C2, and C3 in FIG. 4, respectively.

As can be seen from FIG. 5, the first scan line 212 intersects the data line 220 and the A power line 230 encloses a rectangular area, a second scan line 214, a third scan line 216, a first light emitting element 240, a second light emitting element 250, a first transistor 260, a second transistor 270, and a third power The crystal 280, the fourth transistor 281, the fifth transistor 283, the sixth transistor 285, the seventh transistor 287, the eighth transistor 289, the first capacitor 292, the second capacitor 294, and the third capacitor 296 are all disposed on This rectangle is in the area. In addition, the first light emitting element 240 and the second light emitting element 250 have different light emitting areas. Here, the light-emitting area of the first light-emitting element 240 is larger than the light-emitting area of the second light-emitting element 250, and the ratio of the second light-emitting element 150 to the first light-emitting element 140 is between 1/8 and 1/2, preferably 1/4. .

In addition, the gate (control end) of the first transistor 260 is connected to the first scan line 212. The source (first end) of the first transistor 260 is connected to the data line 220, and the drain (second end) of the first transistor 260 is connected to one end of the first capacitor 292.

The gate (control end) of the second transistor 270 extends outwardly through the second The container 294 is connected to one end of the first capacitor 292. That is, the gate of the second transistor 270 is connected to one end of the second capacitor 294. The source (first end) of the second transistor 270 is connected to the first power line 230 through the eighth transistor 289 and the drain (second end) of the second transistor 270 is connected to one end of the first light-emitting element 240.

The source (first end) of the third transistor 280 is connected to the first power line 230 The drain of the third transistor 280 is connected to one end of the second light emitting element 250. Third electricity The gate (control terminal) of the crystal 280 extends outward to be connected to the source (first end) of the seventh transistor 287. It is worth mentioning that, in order to provide the above compensation effect, the channel aspect ratio of the third transistor 280 may be set to be less than or equal to the channel aspect ratio of the second transistor 270.

The gate (control terminal) of the fourth transistor 281 is connected to the second scan line 214, and the drain (second end) of the fourth transistor 281 is connected to the drain of the first transistor 260 and one end of the first capacitor 292. The source (first end) of the fourth transistor 281 is connected to a power source (not shown). Specifically, the source of the fourth transistor 281 is connected to the drain of the first transistor 260, is formed of the same conductor pattern, and is connected to one end of the first capacitor 292 through the contact window structure W6. Further, the source of the fourth transistor 281 and the drain of the second transistor 270 are formed of a continuous conductor pattern. That is, the source of the fourth transistor 281 and the drain of the second transistor 270 may be formed of different portions of the same conductor pattern without being connected to each other by the contact structure.

a gate (control terminal) of the fifth transistor 283 is connected to the second scan line 214, The drain (second end) of the fifth transistor 283 is connected to the gate of the second transistor 270. Further, the drain of the fifth transistor 283 extends outward to be connected to one end of the second capacitor 294. The drain of the fifth transistor 283 and one end of the second capacitor 294 are formed by a continuous conductor pattern and are connected to the gate of the second transistor 270 through the contact window structure W7.

The gate (control terminal) of the sixth transistor 285 is connected to the second scan line 216, The drain (second end) of the sixth transistor 285 is connected to the source (first end) of the fifth transistor 283, and the source of the sixth transistor 285 is extended outwardly to the third capacitor 296. One end and a gate connected to the third transistor 280. In the present embodiment, the source of the second transistor 270, the source of the fifth transistor 283, and the drain (second end) of the sixth transistor 285 are formed by the same conductor pattern and are connected to each other.

The gate (control terminal) of the seventh transistor 287 is connected to the first scan line 212, The drain (second end) of the seventh transistor 287 is connected to the data line 220, and the source (first end) of the seventh transistor 287 is connected to the gate of the third transistor 280. Specifically, the seventh transistor 287 is a multi-channel transistor structure in FIG. 5, but the invention is not limited thereto. In addition, the source of the seventh transistor 287 and the source of the sixth transistor 285 may be formed by a continuous conductor pattern, and the contact window structure W8 is connected to one end of the third capacitor 296.

The gate (control terminal) of the eighth transistor 289 is connected to the third scan line 216, The drain (second end) of the eighth transistor 289 is connected to the first power line 230, and the source (first end) of the eighth transistor 289 is connected to the drain of the sixth transistor 285 and the fifth transistor 283. The source. As described above, the source of the eighth transistor 289, the drain of the sixth transistor 285, and the source of the fifth transistor 283 are composed of continuous conductor patterns.

In this embodiment, one end of the first capacitor 292 is connected to the first electric crystal. The drain of body 260 is coupled to the gate of second transistor 270 through second capacitor 294, and one end of first capacitor 292 is coupled to the power supply to receive the low potential reference voltage. Both ends of the second capacitor 294 are connected to one end of the first capacitor 292 and the gate of the second transistor 270, respectively. One end of the third capacitor 296 is connected to a power source that delivers a low voltage reference potential and the other end of the third capacitor 296 is connected to a source of the seventh transistor 287, a gate of the third transistor 280, and a source of the sixth transistor 285. pole.

In addition, the first light emitting element 240 includes two ends and is located at both ends thereof. An illuminating layer, wherein one end of the first illuminating element 240 is connected to the drain of the second transistor 270 through the contact window structure W9 and the other end is connected to the low voltage reference potential. Similarly, the second light-emitting element 250 includes two ends and a light-emitting layer between the two ends, wherein one end of the second light-emitting element 240 is connected to the drain of the third transistor 280 through the contact window structure W10 and the other end is connected. At low voltage reference potential. In the present embodiment, the first light-emitting element 240 and the second light-emitting element 250 are, for example, bottom-emitting type light-emitting elements. Therefore, the area of all of the transistors and capacitors is located beside the first illuminating element 240 and the second illuminating element 250. That is, at least a portion of the first light-emitting element 240 and the second light-emitting element 250 are not overlapped with the transistor and the capacitor. Of course, the first light-emitting element 240 and the second light-emitting element 250 can also be selectively fabricated into a double-sided light-emitting type light-emitting element.

When the light emitting element is designed as an upper light emitting type light emitting element, the light emitting element Can overlap the area where the transistor and capacitor are located. For example, FIG. 6 is a schematic diagram of a pixel structure of an upper light emitting type organic light emitting diode according to a second embodiment of the present invention. Referring to FIG. 4 and FIG. 6 , the organic light emitting diode structure 300 includes a first scan line 312 , a second scan line 314 , a third scan line 316 , a data line 320 , a first power line 330 , and a second power line . 332, a third power line 334, a first light-emitting element 340, a second light-emitting element 350, a first transistor 360, a second transistor 370, a third transistor 380, a fourth transistor 381, a fifth transistor 383, The sixth transistor 385, the seventh transistor 387, the eighth transistor 389, the first capacitor 392, the second capacitor 394, and the third capacitor 396. Specifically, the first transistor 360 and the second transistor 370, the third transistor 380, the fourth transistor 381, the fifth transistor 383, the sixth transistor 385, the seventh transistor 387, and the eighth transistor 389 are respectively the transistors M31, M35, and M38 in FIG. , M32, M33, M36, M37, and M34, the first light-emitting element 340 and the second light-emitting element 350 are the OLED elements D1 and D2 in FIG. 4, respectively, the first scan line 312, the second scan line 314, and the third scan line. 316 is used to transmit the current scanning signal S(i), the previous scanning signal S(i-1), and the first-level lighting signal E(i) in FIG. 4, and the data line 320 and the first power line 330 are respectively used. The data voltage Vdata and the high potential reference voltage Vdd in FIG. 4 are transmitted, and the second power line 332 and the third power line 334 are both used to transmit the low potential reference voltage Vss, and the first capacitor 392, the second capacitor 394, and the third capacitor are used. 396 are capacitors C1, C2, and C3 in FIG. 4, respectively.

As can be seen from FIG. 6, the second power line 332, the third power line 334, and the data line 320 and the first power line 330 enclose a rectangular area, the first scan line 312, the second scan line 314, the third scan line 316, the first light emitting element 340, the second light emitting element 350, the first transistor 360, and the first The second transistor 370, the third transistor 380, the fourth transistor 381, the fifth transistor 383, the sixth transistor 385, the seventh transistor 387, the eighth transistor 389, the first capacitor 392, and the second capacitor 394 And the third capacitor 396 is disposed in this rectangular area. In addition, the first light emitting element 340 and the second light emitting element 350 have different light emitting areas. Here, the light-emitting area of the first light-emitting element 340 is larger than the light-emitting area of the second light-emitting element 350, and the ratio of the light-emitting area of the second light-emitting element 150 and the first light-emitting element 140 is between 1/8 and 1/2, preferably 1 /4.

In addition, the gate (control end) of the first transistor 360 is connected to the first scan line 312, the source (first end) of the first transistor 360 is connected to the data line 320, and the drain (second end) of the first transistor 360 is connected to one end of the first capacitor 392 and one end of the second capacitor 394. . Here, the drain of the first transistor 360 extends outward such that the drain of the first transistor 360, the end of the first capacitor 392, and the end of the second capacitor 394 are formed by a continuous conductor pattern.

The gate (control terminal) of the second transistor 370 extends outwardly and is coupled to one end of the first capacitor 392 through the second capacitor 394. That is, the gate of the second transistor 370 is connected to one end of the second capacitor 394 and is composed of a continuous conductor pattern. The source (first end) of the second transistor 370 is connected to the first power line 330 through the eighth transistor 389 and the drain (second end) of the second transistor 370 is connected to one end of the first light-emitting element 340.

The source (first end) of the third transistor 380 is connected to the first power line 330 and the drain (second end) of the third transistor 380 is connected to one end of the second light emitting element 350. The gate (control terminal) of the third transistor 380 extends outward to be connected to the source (first end) of the seventh transistor 387. It is worth mentioning that, in order to provide the above compensation effect, the channel length to width ratio of the third transistor 380 may be set to be less than or equal to the channel aspect ratio of the second transistor 370.

The gate (control terminal) of the fourth transistor 381 is connected to the second scan line 314, and the drain (second end) of the fourth transistor 381 is connected to the drain of the first transistor 360 and one end of the first capacitor 392. The source (first end) of the fourth transistor 381 is connected to the second power line 332. Specifically, the source of the fourth transistor 381 is connected to the drain of the first transistor 360 and is identical to the end of the first capacitor 292. The composition of the case. In addition, a source of the fourth transistor 381 connected to the first capacitor 392 through the contact window structure W11 is further connected to the second power line 332.

a gate (control terminal) of the fifth transistor 383 is connected to the second scan line 314, The drain (second end) of the fifth transistor 383 is connected to the gate of the second transistor 370 through the contact window structure W12. Further, the gate of the second transistor 370 is connected to one end of the second capacitor 394 such that the gate of the fifth transistor 383 is connected to one end of the second capacitor 394. The gate of the second transistor 370 and the one end of the second capacitor 394 are formed of a continuous conductor pattern and are connected to the drain of the fifth transistor 383 through the contact window structure W12.

The gate (control terminal) of the sixth transistor 385 is connected to the second scan line 316, The drain (second end) of the sixth transistor 385 is connected to the source (first end) of the fifth transistor 383, and the source (first end) of the sixth transistor 385 is extended outwardly to the third One end of the capacitor 396 and the through-contact window structure W12 are connected to the gate of the third transistor 380. In the present embodiment, the source of the second transistor 370, the source of the fifth transistor 383, and the drain of the sixth transistor 385 are formed by the same conductor pattern and connected to each other.

The gate (control terminal) of the seventh transistor 387 is connected to the first scan line 312, The drain (second end) of the seventh transistor 387 is connected to the data line 320, and the source of the seventh transistor 387 is connected to the gate of the third transistor 380 through the contact window structure W12. Specifically, the seventh transistor 387 is a multi-channel transistor structure in FIG. 6, but the invention is not limited thereto. In addition, one end of the third capacitor 396, the source of the seventh transistor 387, and the source of the sixth transistor 385 may be formed of a continuous conductor pattern.

The gate (control terminal) of the eighth transistor 389 is connected to the third scan line 316, The drain (second end) of the eighth transistor 389 is connected to the first power line 330, and the source (first end) of the eighth transistor 389 is connected to the drain of the sixth transistor 385 and the fifth transistor 383. The source. As described above, the source of the eighth transistor 389, the drain of the sixth transistor 385, and the source of the fifth transistor 383 are formed of continuous conductor patterns.

In this embodiment, one end of the first capacitor 392 is connected to the first electric crystal. The drain of the body 360 is coupled to the gate of the second transistor 370 through the second capacitor 394, and the other end of the first capacitor 392 is coupled to the second power line 332 to receive the low potential reference voltage. Both ends of the second capacitor 394 are connected to one end of the first capacitor 392 and the gate of the second transistor 370, respectively. One end of the third capacitor 396 is connected to the third power supply line 334 that transmits the low voltage reference potential, and the other end of the third capacitor 396 is connected to the source of the seventh transistor 387, the gate of the third transistor 380, and the sixth power. The source of the crystal 385.

In addition, the first light-emitting element 340 includes two ends and is located at both ends thereof. An illuminating layer is disposed, wherein one end of the first illuminating element 340 is connected to the drain of the second transistor 370 through the contact window structure W13 and the other end is connected to the low voltage reference potential. Similarly, the second light-emitting element 350 includes two ends and a light-emitting layer between the two ends, wherein one end of the second light-emitting element 340 is connected to the drain of the third transistor 380 through the contact window structure W14 and the other end is connected. At low voltage reference potential. In the present embodiment, the first light-emitting element 340 and the second light-emitting element 350 are, for example, upper-light-emitting type light-emitting elements. Therefore, the first light-emitting element 340 and the second light-emitting element 350 overlap the transistors and the capacitor.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100‧‧‧Organic luminescent pixel structure

110‧‧‧First scan line

120‧‧‧Information line

130‧‧‧First power cord

140‧‧‧First light-emitting element

150‧‧‧Second light-emitting element

160‧‧‧First transistor

170‧‧‧Second transistor

180‧‧‧ Third transistor

190‧‧‧First capacitor

A-A’, B-B’‧‧‧ cut line

W1~W5‧‧‧Contact window structure

Claims (13)

An organic light emitting diode pixel structure, comprising: a first scan line; a data line; a first power line; a first light emitting element; a second light emitting element, wherein a light emitting area of the first light emitting element The second light-emitting element has different light-emitting areas; a first transistor, the control end of the first transistor is connected to the first scan line, and the first end of the first transistor is connected to the data line; a first transistor having a first end connected to the first power line and a second end of the second transistor connected to one end of the first light emitting element; a third transistor, the third transistor The first end is connected to the first power line and the second end of the third transistor is connected to one end of the second light emitting element, and the control end of the third transistor extends outward to be connected to the first light emitting element And the first capacitor, the second end of the first transistor and the control end of the second transistor are connected to one end of the first capacitor. The OLED pixel structure of claim 1, wherein a illuminating area of the first illuminating element is greater than a illuminating area of the second illuminating element, and the second illuminating element and the first illuminating element are The ratio of the area of the light is between 1/8 and 1/2. The OLED pixel structure of claim 1, wherein a illuminating area of the first illuminating element is greater than a illuminating area of the second illuminating element, and a illuminating area of the second illuminating element and the first The light-emitting area ratio of the light-emitting elements is 1/4. The OLED pixel structure of claim 1, wherein the channel length to width ratio of the third transistor is less than or equal to the channel aspect ratio of the second transistor. The OLED pixel structure of claim 1, wherein the control end of the second transistor and the second end of the first transistor are in contact with each other through a contact window structure. The OLED pixel structure of claim 1, wherein the end of the first illuminating element is in contact with the control end of the third transistor and the second transistor through a plurality of contact window structures. Second end. The OLED pixel structure of claim 1, wherein the other end of the first capacitor is connected to the first power line. The OLED pixel structure of claim 1, wherein the control end of the first transistor, the control end of the second transistor, and the end of the first capacitor are formed of the same conductive layer. . The OLED pixel structure of claim 1, wherein the end of the first illuminating element and the end of the second illuminating element are respectively connected to the first electric current through a plurality of contact window structures a second end of the crystal and a second end of the second transistor. The OLED pixel structure of claim 1, wherein the end of the first illuminating element and the end of the second illuminating element are made of a transparent conductive material. The OLED pixel structure of claim 1, further comprising: a second scan line; a third scan line; a fourth transistor, wherein the control end of the fourth transistor is connected to the first a second scan line, wherein the second end of the fourth transistor is connected to the second end of the first transistor and the end of the first capacitor, and the first end of the fourth transistor is connected to a power source; a transistor, the control end of the fifth transistor is connected to the second scan line, the second end of the fifth transistor is connected to the control end of the second transistor; a sixth transistor, the control of the sixth transistor The second transistor is connected to the second scan line, the second end of the sixth transistor is connected to the first end of the fifth transistor, and the first end of the sixth transistor is connected to the control end of the third transistor; a seventh transistor, the control terminal of the seventh transistor is connected to the first scan line, the second end of the seventh transistor is connected to the data line, and the first end of the seventh transistor is connected to the first a control end of the tri-crystal; an eighth transistor, the control end of the eighth transistor is connected to a third scan line, the second end of the eighth transistor is connected to the first power line, and the first end of the eighth transistor is connected to the second end of the sixth transistor and the fifth transistor First end a second capacitor having one end connected to the end of the first capacitor and the other end connected to the second end of the fifth transistor and the control end of the second transistor; a third capacitor, one end of the third capacitor is connected to the power source, and the other end of the third capacitor is connected to the first end of the seventh transistor, the control end of the third transistor, and the sixth transistor First end. The OLED pixel structure of claim 11, wherein the first scan line, the second scan line, and the third scan line are independently driven. The OLED pixel structure of claim 11, wherein the power source is provided by a second power line or a third power line.