CN104681578A - Organic light emitting diode pixel structure - Google Patents
Organic light emitting diode pixel structure Download PDFInfo
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- CN104681578A CN104681578A CN201410043660.8A CN201410043660A CN104681578A CN 104681578 A CN104681578 A CN 104681578A CN 201410043660 A CN201410043660 A CN 201410043660A CN 104681578 A CN104681578 A CN 104681578A
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- 239000003990 capacitor Substances 0.000 claims abstract description 90
- 239000004020 conductor Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 230000032683 aging Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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Abstract
The invention provides an organic light emitting diode pixel structure which comprises a first scanning line, a data line, a first power line, a first light emitting element, a second light emitting element, a first transistor, a second transistor, a third transistor and a first capacitor. The first light emitting element and the second light emitting element have different light emitting areas. The control end of the first transistor is connected to the first scanning line and the first end of the first transistor is connected to the data line. The first end of the second transistor is connected to the first power line and the second end thereof is connected to one end of the first light emitting element. The first end of the third transistor is connected to the first power line, the second end of the third transistor is connected to one end of the second light emitting element, and the control end of the third transistor extends outwards and is connected to one end of the first light emitting element. The second end of the first transistor and the control end of the second transistor are connected to one end of the first capacitor.
Description
Technical field
The invention relates to a kind of Organic Light Emitting Diode (Organic Light Emitting Diode, be called for short OLED) dot structure, and particularly a kind of can for the OLED pixel structure because using the brightness decline situation of the OLED element caused to compensate for a long time.
Background technology
In the epoch now that development in science and technology is maked rapid progress, Organic Light Emitting Diode (Organic Light Emitting Diode, being called for short OLED) technology system is developed, and be used in many display application occasions, be such as TV, computer screen, notebook computer, mobile phone or personal digital assistant etc.In general, OLED display comprises multiple OLED pixel circuit arranged in a matrix fashion, and each OLED pixel circuit comprises the drive circuit of OLED element and correspondence.
In general, the OLED element in OLED display and drive circuit thereof need long-time conducting, to carry out image display operations accordingly.But, the situation that long activation conducting will make OLED element produce critical conduction voltage rise and display brightness decline.Accordingly, how designing the compensating circuit of the situation that the critical conduction voltage rise that can effectively occur because using for a long time for OLED element and display brightness decline, is one of industry direction of constantly endeavouring.
Summary of the invention
According to the present invention, a kind of Organic Light Emitting Diode (Organic Light Emitting Diode is proposed, be called for short OLED) dot structure, comprising one first scan line, a data wire, one first power line, one first light-emitting component, one second light-emitting component, a first transistor, a transistor seconds, a third transistor and one first capacitor.The light-emitting area of the first light-emitting component is different from the light-emitting area of the second light-emitting component.The control end of the first transistor is connected to the first scan line and the first end of the first transistor is connected to data wire.The first end of transistor seconds is connected to the first power line and the second end of transistor seconds is connected to one end of the first light-emitting component.The first end of third transistor is connected to the first power line and the second end of third transistor is connected to one end of the second light-emitting component, and the control end of third transistor stretches out and is connected to one end of the first light-emitting component.Second end of the first transistor and the control end of transistor seconds are connected to one end of the first capacitor.
Propose a kind of OLED pixel structure according to the present invention, the circuit that wherein the multiple capacitor of multiple transistor AND gate is formed comprises driving node, pixel drive unit, the electroluminescent element of display and electro-compensation unit.Pixel drive unit is coupled to data wire to receive data voltage, and provides driving voltage to driving node in response to data voltage.Show electroluminescent element and be coupled to driving node, show electroluminescent element luminous in response to driving voltage, wherein the level of driving voltage is relevant to the aging factor voltage showing electroluminescent element, and aging factor voltage corresponds to the service time of electroluminescent element.Electro-compensation unit is coupled to driving node, and electroluminescent compensating circuit comprises the electroluminescent element of compensation, and electro-compensation unit drives according to driving voltage and compensates the luminescence of electroluminescent element, carries out degradation compensation with this by compensating electroluminescent element to the electroluminescent element of display.
In order to have better understanding to the above-mentioned and other aspect of the present invention, preferred embodiment cited below particularly, and coordinating accompanying drawing, being described in detail below.
Accompanying drawing explanation
Fig. 1 illustrates the calcspar of the display of the organic light-emitting diode pixel circuit of the application embodiment of the present invention;
Fig. 2 illustrates the calcspar of organic light-emitting diode pixel circuit P (i, j);
Fig. 3 A illustrates the circuit diagram of the organic light-emitting diode pixel circuit according to first embodiment of the invention;
Fig. 3 B illustrates the schematic diagram of the organic LED pixel structure according to first embodiment of the invention;
Fig. 3 C illustrates that organic light-emitting diode pixel circuit according to Fig. 3 B is along the generalized section of hatching line A-A ' and B-B ';
Fig. 4 illustrates the circuit diagram of the organic light-emitting diode pixel circuit according to second embodiment of the invention;
Fig. 5 illustrates the schematic diagram that the organic LED pixel structure according to second embodiment of the invention designs with bottom emission type;
Fig. 6 illustrates the schematic diagram that the organic LED pixel structure according to second embodiment of the invention designs with top light emitting-type.
Description of reference numerals:
1: display;
12: data driver;
14: scan driver;
16: light emission controller;
18: display floater;
100,200,300: organic light emissive pixels structure;
102,104: insulating barrier;
110,212,312: the first scan lines;
120,220,320: data wire;
130,230,330: the first power lines;
140,240,340: the first light-emitting components;
142, one end of 144: the first light-emitting components;
146,156: luminescent layer;
150,250,350: the second light-emitting components;
152, one end of 154: the second light-emitting components;
160,260,360: the first transistor;
160C, 170C, 180C: passage;
160D, 170D, 180D: drain electrode;
160G, 170G, 180G: grid;
160S, 170S, 180S: source electrode;
170,270,370: transistor seconds;
180,280,380: third transistor;
190,292,392: the first capacitors;
192, one end of 194: the first capacitors;
214,314: the second scan lines;
216,316: the three scan lines;
281,381: the four transistors;
283,383: the five transistors;
285,385: the six transistors;
287,387: the seven transistors;
289,389: the eight transistors;
294,394: the second capacitors;
296,396: the three capacitors;
332: second source line;
334: the three power lines;
A-A ', B-B ': hatching line;
W1 ~ W14: contact structure;
P (i, j), 10,20,30,40:OLED image element circuit;
U1: pixel drive unit;
U2: show electroluminescent element;
U3: electro-compensation unit;
M1-M3, M11-M13, M21-M25, M31-M38: transistor;
C, C1-C3: electric capacity;
Nc, Nc1, Nc2, Nc1-Nc3: node;
C2_E1, C2_E2, C3_E1, C3_E2: end points;
Nd: driving node;
D1, D2:OLED element;
S (1)-S (M): scan signals;
S (i): scan signals at the corresponding levels;
S (i-1): previous stage scan signals;
D (1)-D (N): data-signal;
E (i): luminous signal at the corresponding levels;
E (1)-E (M): luminous signal;
Vdata: data voltage;
Vdr: driving voltage;
VDD: high level reference voltage;
VSS: low level reference voltage.
Embodiment
Organic Light Emitting Diode (the Organic Light Emitting Diode of the embodiment of the present invention, be called for short OLED) image element circuit comprise as display operation the electroluminescent element of display and provide driving voltage drive display electroluminescent element pixel drive unit, wherein the level of driving voltage is relevant to the aging factor voltage showing electroluminescent element.The OLED pixel circuit of the embodiment of the present invention also comprises electro-compensation unit, compensates the luminescence of electroluminescent element in order to drive according to driving voltage, carries out degradation compensation with this by compensating electroluminescent element to the electroluminescent element of display.
Please refer to Fig. 1, Fig. 1 illustrates the calcspar of the display of the OLED pixel circuit of the application embodiment of the present invention.For example, display 1 comprise data driver 12, scan driver 14, light emission controller 16 and display floater 18.Display floater 18 comprises pel array, wherein such as have M × N number of OLED pixel circuit P (1,1)-P (M, N), M and N be greater than 1 natural number.Data driver 12, scan driver 14 and light emission controller 16 respectively in order to provide data-signal D (1)-D (N), scan signals S (1)-S (M) and luminous signal E (1)-E (M) to display floater 18, to drive wherein each OLED pixel circuit P (1,1)-P (M, N) carries out picture display operation.
Due to each OLED pixel circuit P (1 in display floater 18,1)-P (M, N) there is circuit structure identical in fact and operation, next, only for single OLED pixel circuit P (i, j) in display floater 18, come each OLED pixel circuit P (1 in display floater 18,1) circuit structure of-P (M, N) and operation are described further, and wherein i and j is respectively the natural number being less than or equal to M and being less than or equal to N.
Please refer to Fig. 2, Fig. 2 illustrates the calcspar of organic light-emitting diode pixel circuit P (i, j).OLED pixel circuit P (i, j) comprises driving node Nd, pixel drive unit u1, shows electroluminescent element u2 and electro-compensation unit u3.Pixel drive unit u1 is coupled to data wire to receive data voltage Vdata, and provides driving voltage Vdr to driving node Nd in response to data voltage Vdata.
Show electroluminescent element u2 and be coupled to driving node Nd, and luminous in response to driving voltage Vdr, and wherein show electroluminescent element u2 and have aging factor voltage Vaging, it such as determines the level of driving voltage Vdr accordingly.For example, showing electroluminescent element u2 is OLED element, and aging factor voltage Vaging is such as the critical conduction voltage of OLED element.The critical conduction voltage of OLED element can rise along with the long-time use of OLED element.
Electro-compensation unit u3 is coupled to driving node Nd, and comprising the electroluminescent element of compensation.It is luminous that electro-compensation unit u3 drives this to compensate electroluminescent element according to driving voltage Vdr, carries out degradation compensation with this by compensating electroluminescent element to the electroluminescent element u2 of display.Electro-compensation unit u3 also such as comprises compensation drive unit, and it compensates the luminescence of electroluminescent element in order to determine that according to driving voltage Vdr process auxiliary drive electric current drives.
Following system proposes several operational instances for OLED pixel circuit P (i, j), to be described in further detail each subelement in OLED pixel circuit P (i, j).
First embodiment
Please refer to Fig. 3 A, Fig. 3 A illustrates the circuit diagram of the organic light-emitting diode pixel circuit according to first embodiment of the invention.In the OLED pixel circuit 10 of the present embodiment, pixel drive unit u1 has the circuit structure of 2T1C, wherein such as comprises node Nc, transistor M1, M2 and electric capacity C; Show electroluminescent element u2 and comprise OLED element D1; Electro-compensation unit u3 comprises transistor M3 and OLED element D2, and wherein OLED element D2 is in order to realize compensating electroluminescent element, and transistor M3 is in order to realize auxiliary drive unit.
Please refer to No. 20120274622A1, US Patent No. about the element characteristic of the organic light-emitting diode pixel circuit of the first embodiment and circuit operation, seldom repeat in this.
The concrete structure design of the organic light-emitting diode pixel circuit of the first embodiment is as shown in Fig. 3 B and Fig. 3 C.In detail, Fig. 3 B illustrates the schematic diagram of the organic LED pixel structure of first embodiment of the invention, and Fig. 3 C illustrates that organic light-emitting diode pixel circuit according to Fig. 3 B is along the generalized section of hatching line A-A ' and B-B '.Referring to Fig. 3 B and Fig. 3 C, organic LED pixel structure 100 comprises the first scan line 110, data wire 120, first power line 130, first light-emitting component 140, second light-emitting component 150, the first transistor 160, transistor seconds 170, third transistor 180 and the first capacitor 190.Specifically, the first transistor 160, transistor seconds 170 are respectively transistor M1, M2 and M3 in Fig. 3 with third transistor 180, first light-emitting component 140 and the second light-emitting component 150 are respectively OLED element D1 and the D2 in Fig. 3, first scan line 110, data wire 120 and the first power line 130 are used for sweep signal S (i) at the corresponding levels in transitive graph 3, data voltage Vdata and high potential reference voltage Vdd respectively, and the first capacitor 190 is the electric capacity C in Fig. 3.
From Fig. 3 B, first scan line 110 intersects at data wire 120 and the first power line 130 and crosses a rectangular area, and the first light-emitting component 140, second light-emitting component 150, the first transistor 160, transistor seconds 170, third transistor 180 and the first capacitor 190 are all arranged in this rectangular area.In addition, the first light-emitting component 140 has different light-emitting areas from the second light-emitting component 150.At this, the light-emitting area of the first light-emitting component 140 is greater than the light-emitting area of the second light-emitting component 150, and the light-emitting area ratio of the second light-emitting component 150 and the first light-emitting component 140, between 1/8 ~ 1/2, is preferably 1/4.
In addition, simultaneously known with reference to Fig. 3 B and Fig. 3 C, grid (control end) 160G of the first transistor 160 is connected to the first scan line 110, source electrode (first end) 160S of the first transistor 160 is connected to data wire 120, and the drain electrode of the first transistor 160 (the second end) 160D is connected to one end 192 of the first capacitor 190.In addition, source electrode 160S lays respectively at the both sides of passage 160C with drain electrode 160D, and passage 160C is positioned at above grid 160G.
Grid (control end) 170G of transistor seconds 170 stretches out and is connected to one end 192 of the first capacitor 190.Source electrode (first end) 170S of transistor seconds 170 is connected to the first power line 130 and drain electrode (the second end) 170D of transistor seconds 170 is connected to one end 142 of the first light-emitting component 140.In addition, source electrode 170S lays respectively at the both sides of passage 170C with drain electrode 170D, and passage 170C is positioned at above grid 170G.
Source electrode (first end) 180S of third transistor 180 is connected to the first power line 130 and drain electrode (the second end) 180D of third transistor 180 is connected to one end 152 of the second light-emitting component 150.Grid (control end) 180G of third transistor 180 stretches out and is connected to one end 142 of the first light-emitting component 140.In addition, source electrode 180S lays respectively at the both sides of passage 180C with drain electrode 180D, and passage 180C is positioned at above grid 180G.It is worth mentioning that, in order to provide above-mentioned compensating action, the passage aspect of third transistor 180 can be set to than the passage aspect ratio being less than or equal to transistor seconds 170.
In the present embodiment, one end 192 of the first capacitor 190 is connected to the drain electrode 160D of the first transistor 160 and grid 170G of transistor seconds 170, and the other end 194 is connected to the first power line 130.But, in other embodiments, the other end 194 of the first capacitor 190 can be connected to the power line that another is used for transmitting electronegative potential reference voltage, and is not limited to and is connected to the first power line 130.
In addition, the first light-emitting component 140 includes two ends 142,144 and the luminescent layer 146 between these two ends 142 and 144.Similarly, the second light-emitting component 150 includes two ends 152,154 and the luminescent layer 156 between these two ends 152 and 154.From Fig. 3 C, the grid of the first transistor 160, transistor seconds 170 and third transistor 180 and one end 192 of the first capacitor 190 are all be made by identical rete, and insulating barrier 102 covers these components.Meanwhile, the source electrode of the first transistor 160, transistor seconds 170 and third transistor 180 is all be made by identical rete with the other end 194 of drain electrode and the first capacitor 190, and this rete is between insulating barrier 102 and insulating barrier 104.
In order to realize required electrical connection, insulating barrier 102 has contact structure W1 and contacts with each other with the drain electrode 160D of the first transistor 160 to allow one end 192 of the first capacitor 190.Insulating barrier 104 has contact structure W2 and contacts with one end 142 of the first light-emitting component 140 to allow the drain electrode 170D of transistor seconds 170.Contact structure W3 in the insulating barrier 102 and contact structure W4 in insulating barrier 104 communicates with each other to allow one end 142 of the first light-emitting component 140 contact with each other with the grid 180G of third transistor 180.In addition, the contact structure W5 in insulating barrier 104 allows the drain electrode 180D of third transistor 180 contact with one end 152 of the second light-emitting component 150.
In the present embodiment, one end 142 of the first light-emitting component 140 and one end 152 of the second light-emitting component 150 are such as formed by transparent conductive material.Therefore, organic light emissive pixels structure 100 can be bottom emission type dot structure.When the other end 144 of the first light-emitting component 140 and the other end 154 of the second light-emitting component 150 are also formed by transparent conductive material, then organic light emissive pixels structure 100 can be dual-side emissive type dot structure.But, in other examples, when one end 142 of first light-emitting component 140 and one end 152 of the second light-emitting component 150 use light tight electric conducting material to make, the other end 144 of the first light-emitting component 140 and the other end 154 of the second light-emitting component 150 will make with transparent conductive material and be formed top emission type organic light emissive pixels structure.
Second embodiment
The circuit diagram of the organic light-emitting diode pixel circuit according to second embodiment of the invention is shown referring to Fig. 4 and Fig. 5, Fig. 4.
From OLED pixel circuit 10 difference of the first embodiment, the OLED pixel circuit 40 of the present embodiment is that pixel drive unit u1 wherein has different circuit structures.Furthermore, the pixel drive unit u1 of the present embodiment comprises node Nc1, Nc2, transistor M31-M37 and electric capacity C1-C3, and electro-compensation unit u3 comprises transistor M38 and OLED element D2; Wherein transistor M31-M38 is such as nmos pass transistor.
Please refer to No. 20120274622A1, US Patent No. about the element characteristic of the organic light-emitting diode pixel circuit of the second embodiment and circuit operation, seldom repeat in this.
The organic light-emitting diode pixel circuit of the second embodiment concrete structure design bottom emission type design under as shown in Figure 5.In detail, Fig. 5 illustrates the schematic diagram that the organic LED pixel structure according to second embodiment of the invention designs with bottom emission type.Referring to Fig. 4 and Fig. 5, organic LED pixel structure 200 comprises the first scan line 212, second scan line 214, three scan line 216, data wire 220, first power line 230, first light-emitting component 240, second light-emitting component 250, the first transistor 260, transistor seconds 270, third transistor 280, the 4th transistor 281, the 5th transistor 283, the 6th transistor 285, the 7th transistor 287, the 8th transistor 289, first capacitor 292, second capacitor 294 and the 3rd capacitor 296.Specifically, the first transistor 260, transistor seconds 270, third transistor 280, 4th transistor 281, 5th transistor 283, 6th transistor 285, 7th transistor 287 and the 8th transistor 289 are respectively the transistor M31 in Fig. 4, M35, M38, M32, M33, M36, M37 and M34, first light-emitting component 240 and the second light-emitting component 250 are respectively OLED element D1 and the D2 in Fig. 4, first scan line 212, second scan line 214, three scan line 216 is used for the sweep signal S (i) at the corresponding levels in transitive graph 4 respectively, previous stage sweep signal S (i-1) and luminous signal E (i) at the corresponding levels, data wire 220 and the first power line 130 are used for data voltage Vdata in transitive graph 4 and high potential reference voltage Vdd respectively, and the first capacitor 292, second capacitor 294 and the 3rd capacitor 296 are respectively the electric capacity C1 in Fig. 4, C2 and C3.
As shown in Figure 5, first scan line 212 intersects at data wire 220 and the first power line 230 and crosses a rectangular area, and the second scan line 214, three scan line 216, first light-emitting component 240, second light-emitting component 250, the first transistor 260, transistor seconds 270, third transistor 280, the 4th transistor 281, the 5th transistor 283, the 6th transistor 285, the 7th transistor 287, the 8th transistor 289, first capacitor 292, second capacitor 294 and the 3rd capacitor 296 are all arranged in this rectangular area.In addition, the first light-emitting component 240 has different light-emitting areas from the second light-emitting component 250.At this, the light-emitting area of the first light-emitting component 240 is greater than the light-emitting area of the second light-emitting component 250, and the ratio of the second light-emitting component 150 and the first light-emitting component 140, between 1/8 ~ 1/2, is preferably 1/4.
In addition, the grid (control end) of the first transistor 260 is connected to the first scan line 212, the source electrode (first end) of the first transistor 260 is connected to data wire 220, and the drain electrode of the first transistor 260 (the second end) is connected to one end of the first capacitor 292.
The grid (control end) of transistor seconds 270 is stretched out and is connected to one end of the first capacitor 292 by the second capacitor 294.That is, the grid of transistor seconds 270 is connected to one end of the second capacitor 294.The source electrode (first end) of transistor seconds 270 is connected to the first power line 230 by the 8th transistor 289 and the drain electrode (the second end) of transistor seconds 270 is connected to one end of the first light-emitting component 240.
The source electrode (first end) of third transistor 280 is connected to the first power line 230 and the drain electrode of third transistor 280 is connected to one end of the second light-emitting component 250.The grid (control end) of third transistor 280 stretches out and is connected to the source electrode (first end) of the 7th transistor 287.It is worth mentioning that, in order to provide above-mentioned compensating action, the passage aspect of third transistor 280 can be set to than the passage aspect ratio being less than or equal to transistor seconds 270.
The grid (control end) of the 4th transistor 281 connects the second scan line 214, and the drain electrode of the 4th transistor 281 (the second end) connects the drain electrode of the first transistor 260 and one end of the first capacitor 292, and the source electrode (first end) of the 4th transistor 281 connects a power supply (not shown).Specifically, the source electrode of the 4th transistor 281 and the drain electrode of the first transistor 260 link together, and be made up of and be connected to one end of the first capacitor 292 by contact structure W6 same conductive pattern.In addition, the source electrode of the 4th transistor 281 and the drain electrode of transistor seconds 270 are made up of continuous print conductive pattern.That is, the source electrode of the 4th transistor 281 and the drain electrode of transistor seconds 270 can be made up of the different piece of same conductive pattern, do not need to be connected to each other by contact structures.
The drain electrode (the second end) that the grid (control end) of the 5th transistor 283 connects the second scan line the 214, five transistor 283 connects the grid of transistor seconds 270.In addition, the drain electrode of the 5th transistor 283 stretches out and is connected to one end of the second capacitor 294.The drain electrode of the 5th transistor 283 and one end of the second capacitor 294 are made up of continuous print conductive pattern, and are connected to the grid of transistor seconds 270 by contact structure W7.
The grid (control end) of the 6th transistor 285 is connected to the second scan line 214, the drain electrode (the second end) of the 6th transistor 285 is connected to the source electrode (first end) of the 5th transistor 283, the one end being connected to the 3rd electric capacity 296 and the grid being connected to the third transistor 280 and source electrode of the 6th transistor 285 stretches out.In the present embodiment, the drain electrode (the second end) of the source electrode of transistor seconds 270, the source electrode of the 5th transistor 283 and the 6th transistor 285 to be made up of identical conductive pattern and connected to each other.
The grid (control end) of the 7th transistor 287 connects the first scan line 212 in succession, drain electrode (the second end) the connection data line 220 of the 7th transistor 287, and the source electrode (first end) of the 7th transistor 287 is connected to the grid of third transistor 280.Specifically, the 7th transistor 287 is multichannel transistor arrangement at Fig. 5, but the present invention is not as limit.In addition, the source electrode of the 7th transistor 287 and the source electrode of the 6th transistor 285 can be made up of continuous print conductive pattern, and are connected to one end of the 3rd capacitor 296 by contact structure W8.
The grid (control end) of the 8th transistor 289 is connected to three scan line 216, the drain electrode (the second end) of the 8th transistor 289 connects the first power line 230, and the source electrode (first end) of the 8th transistor 289 is connected to the drain electrode of the 6th transistor 285 and the source electrode of the 5th transistor 283.Just as above-mentioned, the source electrode of the source electrode of the 8th transistor 289, the drain electrode of the 6th transistor 285 and the 5th transistor 283 is made up of continuous print conductive pattern.
In the present embodiment, one end of the first capacitor 292 is connected to the drain electrode of the first transistor 260 and is connected to the grid of transistor seconds 270 by the second capacitor 294, and one end of the first capacitor 292 is connected to power supply to receive electronegative potential reference voltage.The two ends of the second capacitor 294 connect one end of the first capacitor 292 and the grid of transistor seconds 270 respectively.One end of 3rd capacitor 296 is connected to transmits the source electrode that the power supply of low reference voltage current potential and the other end of the 3rd capacitor 296 are connected to the source electrode of the 7th transistor 287, the grid of third transistor 280 and the 6th transistor 285.
In addition, the first light-emitting component 240 includes two ends and the luminescent layer between these two ends, and wherein one end of the first light-emitting component 240 is connected to the drain electrode of transistor seconds 270 by contact structure W9 and the other end is connected to low reference voltage current potential.Similarly, the second light-emitting component 250 includes two ends and the luminescent layer between these two ends, and wherein one end of the second light-emitting component 250 is connected to the drain electrode of third transistor 280 by contact structure W10 and the other end is connected to low reference voltage current potential.In the present embodiment, the first light-emitting component 240 and the second light-emitting component 250 are such as bottom emission type light-emitting components.Therefore, all position is other at the first light-emitting component 240 and the second light-emitting component 250 for the area of all crystals pipe and capacitor.That is, the first light-emitting component 240 and the second light-emitting component 250 have at least a part not to be overlapped in transistor AND gate capacitor.Certainly, the first light-emitting component 240 and the second light-emitting component 250 are also optionally made into the light-emitting component of dual-side luminescent type.
When light-emitting component is designed to the light-emitting component of top light emitting-type, light-emitting component can be overlapped in transistor AND gate capacitor place area.For example, Fig. 6 illustrates the schematic diagram that the organic LED pixel structure according to second embodiment of the invention designs with top light emitting-type.Referring to Fig. 4 and Fig. 6, organic LED pixel structure 300 comprises the first scan line 312, second scan line 314, three scan line 316, data wire 320, first power line 330, second source line 332, 3rd power line 334, first light-emitting component 340, second light-emitting component 350, the first transistor 360, transistor seconds 370, third transistor 380, 4th transistor 381, 5th transistor 383, 6th transistor 385, 7th transistor 387, 8th transistor 389, first capacitor 392, second capacitor 394 and the 3rd capacitor 396.Specifically, the first transistor 360, transistor seconds 370, third transistor 380, 4th transistor 381, 5th transistor 383, 6th transistor 385, 7th transistor 387 and the 8th transistor 389 are respectively the transistor M31 in Fig. 4, M35, M38, M32, M33, M36, M37 and M34, first light-emitting component 340 and the second light-emitting component 350 are respectively OLED element D1 and the D2 in Fig. 4, first scan line 312, second scan line 314, three scan line 316 is used for the sweep signal S (i) at the corresponding levels in transitive graph 4 respectively, previous stage sweep signal S (i-1) and luminous signal E (i) at the corresponding levels, data wire 320 and the first power line 330 are used for data voltage Vdata in transitive graph 4 and high potential reference voltage Vdd respectively, second source line 332 and the 3rd power line 334 are all used for transmitting electronegative potential reference voltage Vss, and the first capacitor 392, second capacitor 394 and the 3rd capacitor 396 are respectively the electric capacity C1 in Fig. 4, C2 and C3.
As shown in Figure 6, second source line 332, 3rd power line 334, data wire 320 and the first power line 330 cross a rectangular area, first scan line 312, second scan line 314, three scan line 316, first light-emitting component 340, second light-emitting component 350, the first transistor 360, transistor seconds 370, third transistor 380, 4th transistor 381, 5th transistor 383, 6th transistor 385, 7th transistor 387, 8th transistor 389, first capacitor 392, second capacitor 394 and the 3rd capacitor 396 are all arranged in this rectangular area.In addition, the first light-emitting component 340 has different light-emitting areas from the second light-emitting component 350.At this, the light-emitting area of the first light-emitting component 340 is greater than the light-emitting area of the second light-emitting component 350, and the light-emitting area ratio of the second light-emitting component 150 and the first light-emitting component 140, between 1/8 ~ 1/2, is preferably 1/4.
In addition, the grid (control end) of the first transistor 360 is connected to the first scan line 312, the source electrode (first end) of the first transistor 360 is connected to data wire 320, and the drain electrode of the first transistor 360 (the second end) is connected to one end of the first capacitor 392 and one end of the second capacitor 394.At this, the drain electrode of the first transistor 360 stretches out and the drain electrode of the first transistor 360, this end of the first capacitor 392 and this end of the second capacitor 394 is made up of continuous print conductive pattern.
The grid (control end) of transistor seconds 370 is stretched out and is connected to one end of the first capacitor 392 by the second capacitor 394.That is, the grid of transistor seconds 370 is connected to one end of the second capacitor 394, and is made up of continuous print conductive pattern.The source electrode (first end) of transistor seconds 370 is connected to the first power line 330 by the 8th transistor 389 and the drain electrode (the second end) of transistor seconds 370 is connected to one end of the first light-emitting component 340.
The source electrode (first end) of third transistor 380 is connected to the first power line 330 and the drain electrode (the second end) of third transistor 380 is connected to one end of the second light-emitting component 350.The grid (control end) of third transistor 380 stretches out and is connected to the source electrode (first end) of the 7th transistor 387.It is worth mentioning that, in order to provide above-mentioned compensating action, the passage aspect of third transistor 380 can be set to than the passage aspect ratio being less than or equal to transistor seconds 370.
The grid (control end) of the 4th transistor 381 connects the second scan line 314, and the drain electrode of the 4th transistor 381 (the second end) connects the drain electrode of the first transistor 360 and one end of the first capacitor 392, and the source electrode (first end) of the 4th transistor 381 connects second source line 332.Specifically, the source electrode of the 4th transistor 381 and the drain electrode of the first transistor 360 link together, and are made up of same conductive pattern with one end of the first capacitor 292.In addition, one end that the source electrode of the 4th transistor 381 is connected to the first capacitor 392 by contact structure W11 is also connected to second source line 332.
The grid (control end) of the 5th transistor 383 connects the grid of drain electrode (the second end) by contact structure W12 connection transistor seconds 370 of the second scan line the 314, five transistor 383.In addition, the grid of transistor seconds 370 is connected to one end of the second capacitor 394 with the one end making the grid of the 5th transistor 383 be connected to the second capacitor 394.The grid of transistor seconds 370 and this one end of the second capacitor 394 are made up of continuous print conductive pattern, and are connected to the drain electrode of the 5th transistor 383 by contact structure W12.
The grid (control end) of the 6th transistor 385 is connected to the second scan line 314, the drain electrode (the second end) of the 6th transistor 385 is connected to the source electrode (first end) of the 5th transistor 383, the one end being connected to the 3rd electric capacity 396 and the grid being connected to third transistor 380 by contact structure W12 and the source electrode (first end) of the 6th transistor 385 stretches out.In the present embodiment, the drain electrode of the source electrode of transistor seconds 370, the source electrode of the 5th transistor 383 and the 6th transistor 385 to be made up of identical conductive pattern and connected to each other.
The grid (control end) of the 7th transistor 387 connects the first scan line 312, drain electrode (the second end) the connection data line 320 of the 7th transistor 387, and the source electrode of the 7th transistor 387 is connected to the grid of third transistor 380 by contact structure W12.Specifically, the 7th transistor 387 is multichannel transistor arrangement at Fig. 6, but the present invention is not as limit.In addition, the source electrode of one end of the 3rd capacitor 396, the source electrode of the 7th transistor 387 and the 6th transistor 385 can be made up of continuous print conductive pattern.
The grid (control end) of the 8th transistor 389 is connected to three scan line 316, the drain electrode (the second end) of the 8th transistor 389 connects the first power line 330, and the source electrode (first end) of the 8th transistor 389 is connected to the drain electrode of the 6th transistor 385 and the source electrode of the 5th transistor 383.Just as above-mentioned, the source electrode of the source electrode of the 8th transistor 389, the drain electrode of the 6th transistor 385 and the 5th transistor 383 is made up of continuous print conductive pattern.
In the present embodiment, one end of first capacitor 392 is connected to the drain electrode of the first transistor 360 and is connected to the grid of transistor seconds 370 by the second capacitor 394, and the other end of the first capacitor 392 is connected to second source line 332 to receive electronegative potential reference voltage.The two ends of the second capacitor 394 connect one end of the first capacitor 392 and the grid of transistor seconds 370 respectively.One end of 3rd capacitor 396 is connected to transmits the source electrode that the 3rd power line 334 of low reference voltage current potential and the other end of the 3rd capacitor 396 are connected to the source electrode of the 7th transistor 387, the grid of third transistor 380 and the 6th transistor 385.
In addition, the first light-emitting component 340 includes two ends and the luminescent layer between these two ends, and wherein one end of the first light-emitting component 340 is connected to the drain electrode of transistor seconds 370 by contact structure W13 and the other end is connected to low reference voltage current potential.Similarly, the second light-emitting component 350 includes two ends and the luminescent layer between these two ends, and wherein one end of the second light-emitting component 350 is connected to the drain electrode of third transistor 380 by contact structure W14 and the other end is connected to low reference voltage current potential.In the present embodiment, the first light-emitting component 340 and the second light-emitting component 350 are such as top light emitting-type light-emitting components.Therefore, the first light-emitting component 340 and the second light-emitting component 350 are overlapped in these transistor AND gate capacitors.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (13)
1. an organic LED pixel structure, is characterized in that, comprising:
One first scan line;
One data wire;
One first power line;
One first light-emitting component;
One second light-emitting component, wherein the light-emitting area of this first light-emitting component is different from the light-emitting area of this second light-emitting component;
One the first transistor, the control end of this first transistor is connected to this first scan line and the first end of this first transistor is connected to this data wire;
One transistor seconds, the first end of this transistor seconds is connected to this first power line and the second end of this transistor seconds is connected to one end of this first light-emitting component;
One third transistor, the first end of this third transistor is connected to this first power line and the second end of this third transistor is connected to one end of this second light-emitting component, and the control end of this third transistor stretches out and is connected to this end of this first light-emitting component; And
One first capacitor, the second end of this first transistor and the control end of this transistor seconds are connected to one end of this first capacitor.
2. organic LED pixel structure according to claim 1, it is characterized in that, the light-emitting area of this first light-emitting component is greater than the light-emitting area of this second light-emitting component, and the light-emitting area ratio of this second light-emitting component and this first light-emitting component is between 1/8 ~ 1/2.
3. organic LED pixel structure according to claim 1, it is characterized in that, the light-emitting area of this first light-emitting component is greater than the light-emitting area of this second light-emitting component, and the light-emitting area ratio of the light-emitting area of this second light-emitting component and this first light-emitting component is 1/4.
4. organic LED pixel structure according to claim 1, is characterized in that, the passage aspect of this third transistor is than the passage aspect ratio being less than or equal to this transistor seconds.
5. organic LED pixel structure according to claim 1, is characterized in that, the second end of the control end of this transistor seconds and this first transistor is contacted with each other by a contact structure.
6. organic LED pixel structure according to claim 1, is characterized in that, this end of this first light-emitting component is contacted with the control end of this third transistor and the second end of this transistor seconds by multiple contact structure.
7. organic LED pixel structure according to claim 1, is characterized in that, the other end of this first capacitor is connected to this first power line.
8. organic LED pixel structure according to claim 1, is characterized in that, this end of the control end of this first transistor, the control end of this transistor seconds and this first capacitor is made up of identical conductive layer.
9. organic LED pixel structure according to claim 1, it is characterized in that, this end of this first light-emitting component and this end of this second light-emitting component are connected to the second end of this first transistor and the second end of this transistor seconds respectively by multiple contact structure.
10. organic LED pixel structure according to claim 1, is characterized in that, this end of this first light-emitting component and this end of this second light-emitting component are made up of transparent conductive material.
11. organic LED pixel structures according to claim 1, is characterized in that, also comprise:
One second scan line;
One three scan line;
One the 4th transistor, the control end of the 4th transistor connects this second scan line, and the second end of the 4th transistor connects the second end of this first transistor and this end of this first capacitor, and the first end of the 4th transistor connects a power supply;
One the 5th transistor, the control end of the 5th transistor connects this second scan line, and the second end of the 5th transistor connects the control end of this transistor seconds;
One the 6th transistor, the control end of the 6th transistor is connected to this second scan line, and the second end of the 6th transistor is connected to the first end of the 5th transistor, and the first end of the 6th transistor connects the control end of this third transistor;
One the 7th transistor, the control end of the 7th transistor connects this first scan line in succession, and the second end of the 7th transistor connects this data wire, and the first end of the 7th transistor is connected to the control end of this third transistor;
One the 8th transistor, the control end of the 8th transistor is connected to this three scan line, second end of the 8th transistor connects this first power line, and the first end of the 8th transistor is connected to the second end of the 6th transistor and the first end of the 5th transistor;
One second capacitor, one end of this second capacitor is connected to this end of this first capacitor and the other end of this second capacitor is connected to the second end of the 5th transistor and the control end of this transistor seconds; And
One the 3rd capacitor, one end of the 3rd capacitor is connected to this power supply and the other end of the 3rd capacitor is connected to the first end of the first end of the 7th transistor, the control end of this third transistor and the 6th transistor.
12. organic LED pixel structures according to claim 11, is characterized in that, this first scan line, this second scan line and this three scan line drive separately.
13. organic LED pixel structures according to claim 11, is characterized in that, this power supply provided by a second source line or one the 3rd power line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102143808A TW201520641A (en) | 2013-11-29 | 2013-11-29 | Organic light emitting diode pixel structure |
| TW102143808 | 2013-11-29 |
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| CN104681578A true CN104681578A (en) | 2015-06-03 |
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Cited By (1)
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|---|---|---|---|---|
| CN111816691A (en) * | 2020-08-28 | 2020-10-23 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI685694B (en) * | 2019-03-05 | 2020-02-21 | 友達光電股份有限公司 | Pixel structure |
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| CN101079233A (en) * | 2006-05-26 | 2007-11-28 | Lg.菲利浦Lcd株式会社 | Organic light-emitting diode display and driving method |
| US20090295422A1 (en) * | 2008-05-29 | 2009-12-03 | Hamer John W | Compensation scheme for multi-color electroluminescent display |
| CN103400545A (en) * | 2011-08-08 | 2013-11-20 | 东莞万士达液晶显示器有限公司 | Pixel circuit |
| CN203760479U (en) * | 2013-11-29 | 2014-08-06 | 胜华科技股份有限公司 | Organic Light Emitting Diode Pixel Structure |
-
2013
- 2013-11-29 TW TW102143808A patent/TW201520641A/en unknown
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- 2014-01-29 CN CN201410043660.8A patent/CN104681578A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101079233A (en) * | 2006-05-26 | 2007-11-28 | Lg.菲利浦Lcd株式会社 | Organic light-emitting diode display and driving method |
| US20090295422A1 (en) * | 2008-05-29 | 2009-12-03 | Hamer John W | Compensation scheme for multi-color electroluminescent display |
| CN103400545A (en) * | 2011-08-08 | 2013-11-20 | 东莞万士达液晶显示器有限公司 | Pixel circuit |
| CN203760479U (en) * | 2013-11-29 | 2014-08-06 | 胜华科技股份有限公司 | Organic Light Emitting Diode Pixel Structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816691A (en) * | 2020-08-28 | 2020-10-23 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111816691B (en) * | 2020-08-28 | 2020-12-15 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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| TW201520641A (en) | 2015-06-01 |
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