TW201520574A - Magnetic field sensing module, measurement method, and manufacturing method of a magnetic field sensing module - Google Patents

Abstract

A magnetic field sensing module including a plurality of magnetic flux concentrators and a plurality of single direction magnetic sensors is provided. Each of the magnetic flux concentrators extends along a first extension direction, and the magnetic flux concentrators are arranged along a second direction. The single direction magnetic sensors are respectively disposed at a position corresponding to a position between the magnetic flux concentrators and positions corresponding to two sides of the magnetic flux concentrators arranged along the second direction. Sensing directions of the single direction magnetic sensors are substantially the same. A measurement method and a manufacturing method of a magnetic field sensing module are also provided.

Description

Magnetic field sensing module, measuring method and magnetic field sensing module law

The invention relates to a magnetic field sensing module, a measuring method and a magnetic field sensing module.

With the popularity of portable electronic devices, the technology of an electronic compass capable of sensing the geomagnetic direction has received attention. When an electronic compass is applied to a small portable electronic device (such as a smart phone), in addition to the small volume requirement, the electronic compass is preferably capable of achieving three-axis sensing because the user When holding the phone in your hand, it may be held obliquely, and various holding angles may also occur.

In order to achieve three-axis sensing, a conventional technique is to use a tilted wafer technique in which an inclined surface is etched on a germanium substrate, and then a giant magnetoresistance (GMR) multilayer film structure or tunneling magnetoresistance is applied. (tunneling magnetoresistance, TMR) The multilayer film structure is formed on the inclined surface. However, depositing a film on an inclined surface tends to cause uneven thickness of the film, and the etching process on the inclined surface is also difficult and the yield is difficult to control.

Another conventional technique is to use a method of a composite sensing element to achieve three-axis sensing, in particular, to utilize two giant magnetoresistive multilayer film structures (or tunneling magnetoresistive multilayer film structures) arranged perpendicularly to each other. A Hall element is used to achieve three-axis sensing. However, since the sensing sensitivity of the Hall element is different from the sensing sensitivity of the giant magnetoresistive multilayer film structure (or the tunneling magnetoresistive multilayer film structure), this causes the accuracy on one axis to be different from the accuracy on the other two axes. . As a result, when the user rotates the portable electronic device to different angles, the sensing sensitivity to the same magnetic field is different, which causes troubles in use.

In the prior art, in order to achieve multi-axis sensing of a magnetic field, a process of two or more processes is generally used, that is, a process using two or more wafers to fabricate a multi-axial magnetic field sensing module, thus The process is complicated and it is difficult to reduce the manufacturing cost.

The invention provides a magnetic field sensing module, which can utilize multiple unidirectional magnetic sensors with the same sensing direction to achieve multi-axis magnetic field sensing.

The present invention provides a measurement method that can achieve multi-axial magnetic field sensing in a simple manner.

The invention provides a method for manufacturing a magnetic field sensing module, which can produce a magnetic field sensing module capable of achieving multi-axial magnetic field sensing by using a simple manufacturing process.

A magnetic field sensing module according to an embodiment of the invention includes a plurality of magnetic flux concentrators and a plurality of single-directional magnetic sensors. Each flux concentrator extends along a first direction Extending, and the flux concentrators are arranged along a second direction. The unidirectional magnetic sensors are respectively disposed at positions corresponding to the magnetic flux concentrators and corresponding to the two sides of the magnetic flux concentrators arranged in the second direction, wherein the unidirectional magnetic sensors The sensing direction is substantially the same.

A measuring method according to an embodiment of the present invention is for measuring an external magnetic field, the measuring method comprising: changing a magnetic field distribution of the external magnetic field to make a component of the external magnetic field in a first direction, a second direction The upper component and a third-party component convert at least a portion of the component to the second direction at a plurality of different locations; and sense the magnitude of the magnetic field in the second direction at the different locations to measure the external magnetic field The size of the component in one direction, the size of the component in the second direction, and the component size in the third direction.

A method for fabricating a magnetic field sensing module according to an embodiment of the present invention includes: providing a substrate; forming a magnetic sensing multilayer film structure on the substrate; etching a first portion of the magnetic sensing multilayer film structure, wherein the remaining portion A second portion of the magnetic sensing multilayer film structure forms a plurality of unidirectional magnetic sensors separated from each other; forming an insulating layer covering the substrate and the unidirectional magnetic sensors; and forming a plurality of magnetic fluxes on the insulating layer a concentrator, wherein each flux concentrator extends along a first direction, the flux concentrators are arranged along a second direction, and the unidirectional magnetic sensors are respectively disposed at positions between the flux concentrators Below the magnetic flux concentrators are arranged below the positions on both sides in the second direction and below the flux concentrators.

In the magnetic field sensing module of the embodiment of the present invention, since the external magnetic field is bent by the magnetic flux concentrator, the sensing directions of the plurality of single-directional magnetic sensors can be The magnetic field sensing module can achieve multi-axis magnetic field sensing under a relatively simplified structure, thereby reducing the difficulty and cost of manufacturing the magnetic field sensing module. In the measuring method of the embodiment of the present invention, since the external magnetic field is converted to the same direction by changing the magnetic field distribution of the external magnetic field, it is possible to actually reach the external magnetic field in the same direction. Multiple axial magnetic field sensing. Therefore, this measurement method can achieve multiple axial magnetic field sensing in a relatively simple manner. In the method for fabricating the magnetic field sensing module of the embodiment of the present invention, since a magnetic sensing multilayer film structure is etched into a plurality of single-directional magnetic sensors separated from each other, and then formed with a magnetic flux concentrator, To complete the fabrication of the multi-axial magnetic field sensing module. Therefore, the manufacturing method can produce a magnetic field sensing module capable of achieving multi-axial magnetic field sensing by using a relatively simple manufacturing process.

The above described features and advantages of the invention will be apparent from the following description.

100, 100d, 100e‧‧‧ magnetic field sensing module

110‧‧‧Magnetic concentrator

120, 120a, 120a1, 120a1', 120a2, 120a2', 120b, 120b1 120b2, 120b3, 120b4, 120b1'~120b12', 120b1"~120b12", 120c, 120c1, 120c2, 120c1'~120c6', 120d, 120d1~120d12‧‧‧ single direction magnetic sensor

122‧‧‧ pinned layer

124‧‧‧ Pinned layer

126‧‧‧ spacer

128‧‧‧Free layer

130‧‧‧Substrate

140‧‧‧Insulation

150‧‧‧Magnetic sensing multilayer film structure

152‧‧‧Part 1

154‧‧‧Part II

160‧‧‧ photoresist layer

162‧‧‧ patterned photoresist layer

163, 212‧‧‧ openings

170, 220‧‧‧ etching materials

190‧‧‧ Ferromagnetic material layer

210‧‧‧ patterned photoresist layer

A~F‧‧‧ endpoint

B _X , B _Y , B _Z ‧‧‧ components

D1‧‧‧ first direction

D2‧‧‧ second direction

D3‧‧‧ third direction

E1‧‧‧ pinning direction

E2‧‧‧Electronic axis

GND‧‧‧ ground terminal

P1, P2‧‧‧ position

S‧‧‧Sensing direction

VDD‧‧‧voltage supply

V ₁ , V ₂ , V _1X , V _2X , V _1Y , V _2Y , V _1Z , V _2Z ‧‧‧ voltage output

x, y, z‧‧ direction

FIG. 1A is a schematic top view of a magnetic field sensing module according to an embodiment of the invention.

1B and FIG. 1C are schematic side views of the magnetic field sensing module of FIG. 1A in two different directions.

2A, 2B, and 2C show that when an external magnetic field along the x direction, the y direction, and the z direction is applied to the magnetic field sensing module of FIGS. 1A to 1C, the external magnetic field is magnetically A magnetic line simulation of the transition of the concentrator.

3A is a perspective view of the multilayer film structure of the single-direction magnetic sensor of FIG. 1A.

FIG. 3B illustrates the pinning direction of the unidirectional magnetic sensor of FIG. 3A and the easy magnetization axis of the free layer.

FIG. 3C illustrates the change in resistance of the unidirectional magnetic sensor of FIG. 3A under the action of an external magnetic field in different directions and without an external magnetic field.

4A is a circuit diagram of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the x direction.

4B illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 4A.

4C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 4A.

4D illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of FIG. 4A.

FIG. 5A illustrates a circuit architecture of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the y direction.

FIG. 5B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 5A.

Figure 5C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y-direction is applied to the circuit architecture of Figure 5A.

FIG. 5D illustrates that an external magnetic field parallel to the z direction is applied to the circuit frame of FIG. 5A. When configured, the resistance of the unidirectional magnetic sensor changes.

FIG. 6A illustrates a circuit architecture of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the z direction.

FIG. 6B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 6A.

6C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 6A.

Figure 6D illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 6A.

FIG. 7A is a schematic top view of a magnetic field sensing module according to another embodiment of the present invention.

FIG. 7B illustrates the first sigma bridge of the magnetic field sensing module of FIG. 7A for measuring the x-direction magnetic field.

FIG. 7C illustrates a second sigma bridge of the magnetic field sensing module of FIG. 7A for measuring a magnetic field in the y direction.

FIG. 7D illustrates a third Huisi bridge of the magnetic field sensing module of FIG. 7A for measuring a z-direction magnetic field.

FIG. 8A is a schematic top view of a magnetic field sensing module according to still another embodiment of the present invention.

FIG. 8B illustrates the first sigma bridge of the magnetic field sensing module of FIG. 8A for measuring the x-direction magnetic field.

8C illustrates the magnetic field sensing module of FIG. 8A for measuring the magnetic field in the y direction. Second Huisi with the bridge.

FIG. 8D illustrates a third Huisi bridge of the magnetic field sensing module of FIG. 8A for measuring a z-direction magnetic field.

9A-9F are schematic side views showing a flow of a method of fabricating a magnetic field sensing module according to an embodiment of the present invention.

10A illustrates a circuit configuration of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to a magnetic field sensing module of another embodiment of the present invention for sensing a magnetic field parallel to the x direction. The resistance changes.

FIG. 10B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 10A.

Figure 10C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 10A.

11A illustrates a circuit configuration of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to a magnetic field sensing module of another embodiment of the present invention for sensing a magnetic field parallel to the z direction. The resistance changes.

FIG. 11B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 11A.

Figure 11C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 11A.

1A is a top view of a magnetic field sensing module according to an embodiment of the present invention; FIG. 1B and FIG. 1C are schematic side views of the magnetic field sensing module of FIG. 1A in two different directions. Referring to FIG. 1A to FIG. 1C , the magnetic field sensing module 100 of the embodiment includes a plurality of magnetic flux concentrators 110 and a plurality of unidirectional magnetic sensors 120 . Each flux concentrator 110 extends along a first direction D1 (which is parallel to the x direction) and the flux concentrators 110 are arranged along a second direction D2 (which is parallel to the y direction). In the present embodiment, the residual magnetization of these flux concentrators 110 is less than 10% of the saturation magnetization. For example, magnetic flux concentrator 110 is a soft magnetic material such as a nickel-iron alloy, a cobalt iron or cobalt iron boron alloy, a ferrite magnet, or other high permeability material.

The unidirectional magnetic sensors 120 are respectively disposed at positions corresponding to the magnetic flux concentrators 110 (for example, corresponding to positions on the center line between the adjacent two magnetic flux concentrators 110) and corresponding to the magnetic flux concentrations. The devices 110 are arranged at positions on both sides in the second direction D2. For example, the unidirectional magnetic sensors 120a of the unidirectional magnetic sensors 120 are disposed at positions corresponding to the magnetic flux concentrators 110. As seen from FIG. 1B, the unidirectional magnetic sensors 120a That is, it is located below the position between these flux concentrators 110. In addition, the unidirectional magnetic sensors 120b of the unidirectional magnetic sensors 120 correspond to the positions of the magnetic flux concentrators 110 arranged on the two sides in the second direction D2, as seen from FIG. 1B, the single direction The magnetic sensor 120b is located below both sides of the magnetic flux concentrators 110 arranged in the second direction D2. In this embodiment, some of the unidirectional magnetic sensors 120 (such as the unidirectional magnetic sensor 120c) are disposed in the magnetic flux concentrator 110 in a third direction D3 (which is parallel to the z direction). One side, as seen from FIG. 1B, the unidirectional magnetic sensor 120c It is disposed directly below these flux concentrators 110. Further, in the present embodiment, the first direction D1 is substantially perpendicular to the second direction D2, and the third direction D3 is substantially perpendicular to the first direction D1 and the second direction D2.

In the present embodiment, the unidirectional magnetic sensors 120 are, for example, giant magnetoresistive sensors, tunneling magnetoresistive sensors, or a combination thereof. However, in other embodiments, the unidirectional magnetic sensors 120 may be giant magnetoresistive sensors, tunneling magnetoresistive sensors, flux gates, magneto-impedance sensors (magneto-impedance). Sensor), an anisotropic magnetoresistance sensor (AMR sensor) or a combination thereof. Moreover, in the present embodiment, the sensing directions S of the one-way magnetic sensors 120 are substantially the same. For example, the sensing directions S of the unidirectional magnetic sensors 120 are substantially parallel to the second direction D2.

In this embodiment, the magnetic field sensing module 100 further includes a substrate 130 and an insulating layer 140. The unidirectional magnetic sensors 120 are disposed on the substrate 130, and the insulating layer 140 covers the unidirectional magnetic sensors 120. The magnetic flux concentrator 110 is disposed on the insulating layer 140.

2A, 2B, and 2C are magnetic line simulation diagrams of the external magnetic field converted by the magnetic flux concentrator when an external magnetic field along the x direction, the y direction, and the z direction is applied to the magnetic field sensing module of FIGS. 1A to 1C, respectively. . Referring first to FIG. 2A, when an external magnetic field along the x direction is applied, the magnetic field at the position P2 of the unidirectional magnetic sensor 120b is converted to have the y direction due to the action of the magnetic flux concentrator 110 (ie, The magnetic field of the component parallel to the second direction D2), so the magnetic field sensing module 100 can sense the magnitude of the magnetic field in the y direction by the unidirectional magnetic sensor 120b. The size of the external magnetic field that is broken in the x direction. Referring again to FIG. 2B, when an external magnetic field along the y direction is applied, the direction of the magnetic field at the position P1 of the unidirectional magnetic sensor 120a is maintained substantially parallel to the y direction by the action of the magnetic flux concentrator 110. (ie, parallel to the second direction D2), the magnetic field sensing module 100 can sense the magnitude of the magnetic field in the y direction by the unidirectional magnetic sensor 120a to determine the external magnetic field in the y direction. the size of. Referring again to FIG. 2C, when an external magnetic field along the z direction is applied, the direction of the external magnetic field at the position P2 of the unidirectional magnetic sensor 120b is converted to have a y component due to the action of the magnetic flux concentrator 110. The magnetic field sensing module 100 can determine the magnitude of the external magnetic field in the z direction by sensing the magnitude of the magnetic field of the y component in the y direction by the unidirectional magnetic sensor 120b.

3A is a perspective view of the multilayer film structure of the single-direction magnetic sensor of FIG. 1A, and FIG. 3B is a view showing the pinning direction of the single-direction magnetic sensor of FIG. 3A and the easy magnetization axis of the free layer, and FIG. 3C The change of the resistance of the unidirectional magnetic sensor in FIG. 3A under the action of an external magnetic field in different directions and without an external magnetic field. Referring to FIG. 3A to FIG. 3C, in the embodiment, the unidirectional magnetic sensor 120 includes a pinning layer 122, a pinned layer 124, a spacer layer 126, and a free Free layer 128. The pinning layer 122 fixes the magnetization direction of the pinned layer 124, that is, the pinning direction E1, and the direction of the easy magnetization axis E2 of the free layer is substantially perpendicular to the pinning direction E1. When the unidirectional magnetic sensor 120 is a giant magnetoresistive sensor, the spacer layer 126 is made of a non-magnetic metal. In addition, when the single direction magnetic sensor 120 When the tunneling magnetoresistive sensor is used, the spacer layer 126 is made of an insulating material.

The graph in FIG. 3C represents the variation of the resistance R of the unidirectional magnetic sensor 120 with respect to the external magnetic field B. As shown in the upper left diagram of FIG. 3C, when the unidirectional magnetic sensor 120 is applied with a magnetic field B in the same direction as the pinning direction, its resistance R decreases, that is, the resistance R corresponding to the black dot in the graph. The value of the pinning direction is the sensing direction S of the unidirectional magnetic sensor 120. As shown in the lower left diagram of FIG. 3C, when the unidirectional magnetic sensor 120 is applied with a magnetic field B outside the direction opposite to the pinning direction, its resistance R rises, that is, the resistance R corresponding to the black dot in the graph. The value. As shown in the upper right diagram of FIG. 3C, when the unidirectional magnetic sensor 120 is applied with a magnetic field B perpendicular to the pinning direction, its resistance R remains unchanged, that is, the resistance R corresponding to the black dot in the graph. The value. In addition, as shown in the lower right diagram of FIG. 3C, when the unidirectional magnetic sensor 120 is not applied with a magnetic field, its resistance R remains unchanged, that is, the value of the resistance R corresponding to the black dot in the graph.

4A is a circuit diagram of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the x direction. 4B illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 4A. 4C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 4A. 4D illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of FIG. 4A. Referring to FIG. 4A to FIG. 4D, the unidirectional magnetic sensors 120b are partially disposed at positions corresponding to the two sides of the magnetic flux concentrators 110 arranged in the second direction D2 (ie, parallel to the y direction). A first Wheatstone bridge is used to sense a component B _{X of} an external magnetic field in a first direction D1 (ie, parallel to the x direction).

Specifically, referring to FIG. 4B, when the external magnetic field has only the component B _X , the magnetic field at the unidirectional magnetic sensor 120 b1 has a component in the -y direction under the action of the magnetic flux concentrator 110 (ie, The direction of the sensing direction S of the unidirectional magnetic sensor 120b1 is opposite, so that the resistance of the unidirectional magnetic sensor 120b1 rises. In addition, the magnetic field at the unidirectional magnetic sensor 120b2 will have a component in the +y direction (ie, the same direction as the sensing direction S of the unidirectional magnetic sensor 120b1), and thus the resistance of the unidirectional magnetic sensor 120b2. Will fall. Similarly, the magnetic field at the unidirectional magnetic sensor 120b3 will have a component in the +y direction (ie, the same direction as the sensing direction S of the unidirectional magnetic sensor 120b1), and thus the unidirectional magnetic sensor 120b2 The resistance will drop. In addition, the magnetic field at the unidirectional magnetic sensor 120b4 has a component in the -y direction (ie, opposite to the sensing direction S of the unidirectional magnetic sensor 120b1), and thus the resistance of the unidirectional magnetic sensor 120b4. Will rise. In the first singular bridge, the voltage supply terminal VDD is coupled between the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b2, and the ground GND is coupled to the unidirectional magnetic sensor 120b3. Between the unidirectional magnetic sensors 120b4. In addition, the voltage output terminal V _1X is coupled between the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b3, and the voltage output terminal V _2X is coupled to the unidirectional magnetic sensor 120b2 and the unidirectional magnetic field. Between the sensors 120b4. The resistance between the voltage supply terminal VDD and the voltage output terminal V _1X (ie, the resistance of the single-direction magnetic sensor 120b1) is greater than the resistance between the voltage supply terminal VDD and the voltage output terminal V _2X (ie, a single-direction magnetic sensor) 120b2 resistance), but the resistance between the voltage output terminal V _1X and the ground GND (ie, the resistance of the unidirectional magnetic sensor 120b3) is smaller than the resistance between the voltage output terminal V _2X and the ground GND (ie, unidirectional magnetic The resistance of the sensor 120b4 is such that the voltage value of the voltage output terminal V _1X is less than the voltage value of the voltage output terminal V _2X . In this way, by measuring the magnitude and positive and negative values of the voltage difference signal between the voltage output terminal V _1X and the voltage output terminal V _2X , the magnitude and positive and negative of the component B _X of the external magnetic field in the x direction can be determined. value.

Referring again to FIG. 4C, when the external magnetic field has only the component B _Y , the magnetic fields at the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4 are all in the +y direction under the action of the magnetic flux concentrator 110. The components, therefore, the resistance of the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4 are all reduced. At this time, since the resistances of the four unidirectional magnetic sensors 120b in the first singular bridge are the same, the voltage value of the voltage output terminal V _1X is substantially equal to the voltage value of the voltage output terminal V _2X . In this way, when the magnitude of the voltage difference signal between the equivalent voltage output terminal V _1X and the voltage output terminal V _2X is positive and negative, the measured result is found to be 0, that is, the component B _{Y of the} external magnetic field. It will not be sensed by the architecture of the first Huisi bridge.

Referring to FIG. 4D again, when the external magnetic field has only the component B _Z , the magnetic field at the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b2 may be in the -y direction under the action of the magnetic flux concentrator 110. The component, therefore, the resistance of the unidirectional magnetic sensors 120b1 and 120b2 will rise. Further, the magnetic field at the unidirectional magnetic sensors 120b3, 120b4 has a component in the +y direction, and thus the resistance of the unidirectional magnetic sensors 120b3, 120b4 is lowered. Since the ratio of the resistance values of the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b3 is substantially the same as the ratio of the resistance values of the unidirectional magnetic sensor 120b2 and the unidirectional magnetic sensor 120b4, the voltage output terminal V _1X The voltage value will be substantially equal to the voltage value of the voltage output terminal V _2X . In this way, when the magnitude of the voltage difference signal between the equivalent voltage output terminal V _1X and the voltage output terminal V _2X is positive and negative, the measured result is found to be 0, that is, the component of the external magnetic field B _Z It will not be sensed by the architecture of the first Huisi bridge.

FIG. 5A illustrates a circuit architecture of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the y direction. FIG. 5B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 5A. Figure 5C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y-direction is applied to the circuit architecture of Figure 5A. Figure 5D illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 5A. Referring to FIG. 5A to FIG. 5D, in the embodiment, the unidirectional magnetic sensors 120a disposed at positions corresponding to the magnetic flux concentrators 110 and the magnetic flux concentrators 110 disposed in the third direction D3 are disposed. The unidirectional magnetic sensors 120c on one side of the upper side are coupled to a second singular bridge, and are used to sense the component B _{Y of the} external magnetic field in the second direction D2 (ie, parallel to the y direction).

Specifically, referring to FIG. 5B, when the external magnetic field has only the component B _X , the net y component of the magnetic field at the unidirectional magnetic sensors 120a1 and 120a2 is 0 by the magnetic flux concentrator 110, so The resistances of the directional magnetic sensors 120a1 and 120a2 remain unchanged. In addition, since the unidirectional magnetic sensors 120c1 and 120c2 are disposed under the magnetic flux concentrator 110, the unidirectional magnetic sensors 120c1 and 120c2 are not subjected to the external magnetic field component by the ferromagnetic shielding effect. The influence of B _X , so the resistance of the unidirectional magnetic sensors 120c1 and 120c2 remains unchanged. In the second singular bridge, the voltage supply terminal VDD is coupled between the unidirectional magnetic sensor 120a1 and the unidirectional magnetic sensor 120c1, and the ground GND is coupled to the unidirectional magnetic sensor 120a2. Between the unidirectional magnetic sensors 120c2. In addition, the voltage output terminal V _1Y is coupled between the unidirectional magnetic sensor 120a1 and the unidirectional magnetic sensor 120c2, and the voltage output terminal V _2Y is coupled to the unidirectional magnetic sensor 120a2 and the unidirectional magnetic field. Between the sensors 120c1. Since the unidirectional magnetic sensors 120a1, 120a2, 120c1, and 120c2 are unchanged, the voltage value of the voltage output terminal V _1Y is substantially equal to the voltage value of the voltage output terminal V _2Y . In this way, the measured voltage difference signal between the voltage output terminal V _1Y and the voltage output terminal V _2Y will be 0, that is, the component B _{X of the} external magnetic field in the x direction will not be the same circuit. The architecture has an impact.

Referring to FIG. 5C again, when the external magnetic field has only the component B _Y , the magnetic field at the unidirectional magnetic sensors 120a1 and 120a2 will have a component in the +y direction under the action of the magnetic flux concentrator 110, so The resistances of the directional magnetic sensors 120a1 and 120a2 are both lowered. On the other hand, since the unidirectional magnetic sensors 120c1 and 120c2 are disposed under the magnetic flux concentrator 110, the unidirectional magnetic sensors 120c1 and 120c2 are not subjected to the component B _{Y of the} external magnetic field by the ferromagnetic shielding effect. The effect, so the resistance of the unidirectional magnetic sensors 120c1 and 120c2 remains unchanged. In this way, in the second Huisi bridge, since the resistance of the unidirectional magnetic sensor 120a1 is smaller than the resistance of the unidirectional magnetic sensor 120c1, the resistance of the unidirectional magnetic sensor 120c2 is greater than the unidirectional magnetic sensing. The resistance of the device 120a2, therefore, the voltage value of the voltage output terminal V _1Y will be greater than the voltage value of the voltage output terminal V _2Y . Therefore, the magnitude and positive and negative values of the component B _Y of the external magnetic field in the y direction can be determined by measuring the magnitude and positive and negative values of the voltage difference signal between the voltage output terminal V _1Y and the voltage output terminal V _2Y .

Referring again to FIG. 5D, when the external magnetic field has only the component B _Z , the direction of the net magnetic field at the unidirectional magnetic sensor 120a1 and the unidirectional magnetic sensor 120a2 is substantially parallel under the action of the magnetic flux concentrator 110. In the z direction, this direction will be perpendicular to the sensing direction S of the unidirectional magnetic sensors 120a1 and 120a2, and the magnetic field in this direction will not change the resistance of the unidirectional magnetic sensors 120a1 and 120a2. On the other hand, the direction of the magnetic field at the unidirectional magnetic sensors 120c1 and 120c2 is also substantially parallel to the z direction (refer to FIG. 2C), and the magnetic field in this direction does not cause unidirectional magnetic sensing. The resistances of the devices 120c1 and 120c2 vary. At this time, since the resistances of all the unidirectional magnetic sensors 120a1, 120a2, 120c1, and 120c2 are substantially the same in the third Huisi bridge, the voltage value of the voltage output terminal V _1Y is substantially equal to the voltage output. The voltage value of terminal V _2Y . In this way, when the magnitude of the voltage difference signal between the equivalent voltage output terminal V _1Y and the voltage output terminal V _2Y is positive and negative, the measured result is found to be 0, that is, the component of the external magnetic field B _Z It will not be sensed by the architecture of the second Huisi bridge.

FIG. 6A illustrates a circuit architecture of the magnetic field sensing module of FIG. 1A when sensing a magnetic field parallel to the z direction. FIG. 6B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to the circuit architecture of FIG. 6A. 6C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 6A. Figure 6D illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 6A. Referring to FIG. 6A to FIG. 6D, the unidirectional magnetic sensors 120b disposed at positions corresponding to the two sides of the magnetic flux concentrators 110 arranged in the second direction D2 are coupled by a first conductive path. The first Huisi is the same as the bridge (the first Huisi bridge shown in Figure 4A), and is coupled to a third Huisi bridge by a second conductive path (as shown in Figure 6A). bridge). The first Huisi bridge is used to sense the component B _{X of the} external magnetic field in the first direction D1, and the third Huisi bridge is used to sense the component B of the external magnetic field in the third direction D3 (ie, the z direction) _Z , wherein the order in which the first conductive path is coupled to the unidirectional magnetic sensors 120b is different from the order in which the second conductive paths are coupled to the unidirectional magnetic sensors 120b, which may be interlaced second in FIG. 6A The conductive path is different from the non-interlaced first conductive path depicted in Figure 4A.

Specifically, referring to FIG. 6B, when the external magnetic field has only the component B _X , the magnetic field at the unidirectional magnetic sensor 120 b1 has a component in the -y direction under the action of the magnetic flux concentrator 110, so The resistance of the directional magnetic sensor 120b1 will rise. In addition, the magnetic field at the unidirectional magnetic sensor 120b2 will have a component in the +y direction, so the resistance of the unidirectional magnetic sensor 120b2 will decrease. Similarly, the magnetic field at the unidirectional magnetic sensor 120b3 will have a component in the +y direction, so the resistance of the unidirectional magnetic sensor 120b2 will decrease. Further, the magnetic field at the unidirectional magnetic sensor 120b4 has a component in the -y direction, and thus the resistance of the unidirectional magnetic sensor 120b4 rises. In the third singular bridge, the voltage supply terminal VDD is coupled between the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b4, and the ground GND is coupled to the unidirectional magnetic sensor 120b2. Between the unidirectional magnetic sensors 120b3. In addition, the voltage output terminal V _1Z is coupled between the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b3, and the voltage output terminal V _2Z is coupled to the unidirectional magnetic sensor 120b2 and the unidirectional magnetic field. Between the sensors 120b4. The resistance between the voltage supply terminal VDD and the voltage output terminal V _1Z (ie, the resistance of the unidirectional magnetic sensor 120b1) and the resistance between the voltage supply terminal VDD and the voltage output terminal V _2Z (ie, a unidirectional magnetic sensor) The resistors of 120b4 are all raised to be substantially equal to each other, and the resistance between the voltage output terminal V _1Z and the ground GND (ie, the resistance of the unidirectional magnetic sensor 120b3) and the voltage output terminal V _2Z and the ground GND The resistance between the resistors (i.e., the resistance of the unidirectional magnetic sensor 120b2) is substantially equal to each other, so that the voltage value of the voltage output terminal V _1Z is substantially equal to the voltage value of the voltage output terminal V _2Z . In this way, when measuring the magnitude and positive and negative values of the voltage difference signal between the voltage output terminal V _1Z and the voltage output terminal V _2Z , the voltage difference is found to be 0, that is, the component B _{X of the} external magnetic field is not It will be measured by the structure of the third Huisi and the bridge.

Referring again to FIG. 6C, when the external magnetic field has only the component B _Y , the magnetic fields at the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4 are both in the +y direction under the action of the magnetic flux concentrator 110. The components, therefore, the resistance of the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4 are all reduced. At this time, since the resistances of the four single-directional magnetic sensors 120b in the third-six bridge are the same, the voltage value of the voltage output terminal _V1Z is substantially equal to the voltage value of the voltage output terminal _V2Z . In this way, when the magnitude of the voltage difference signal between the voltage measuring terminal V _1Z and the voltage output terminal V _2Z is positive and negative, the measured result is found to be 0, that is, the component B _{Y of the} external magnetic field. It will not be sensed by the architecture of the third Huisi bridge.

Referring to FIG. 6D again, when the external magnetic field has only the component B _Z , the magnetic field at the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b2 will have a -y direction under the action of the magnetic flux concentrator 110. The component, therefore, the resistance of the unidirectional magnetic sensors 120b1 and 120b2 will rise. Further, the magnetic field at the unidirectional magnetic sensors 120b3, 120b4 has a component in the +y direction, and thus the resistance of the unidirectional magnetic sensors 120b3, 120b4 is lowered. At this time, since the resistance between the voltage supply terminal VDD and the voltage output terminal V _1Z (ie, the resistance of the unidirectional magnetic sensor 120b1) is greater than the resistance between the voltage supply terminal VDD and the voltage output terminal V _2Z (ie, unidirectional magnetic The resistance of the sensor 120b4), but the resistance between the voltage output terminal V _1Z and the ground GND (ie, the resistance of the unidirectional magnetic sensor 120b3) is smaller than the resistance between the voltage output terminal V _2Z and the ground GND (ie, The resistance of the unidirectional magnetic sensor 120b2), therefore, the voltage value of the voltage output terminal V _1Z will be smaller than the voltage value of the voltage output terminal V _2Z . In this way, by measuring the magnitude and positive and negative values of the voltage difference signal between the voltage output terminal V _1Z and the voltage output terminal V _2Z , the magnitude and positive and negative of the component B _Z of the external magnetic field in the z direction can be determined. value.

4A to FIG. 6D, the structure of the first singular bridge of FIG. 4A to FIG. 4D only detects the magnetic field in the first direction D1 and is not affected by the second direction D2 and the third direction D3. The influence of the magnetic field, and because the structure of the second phosic bridge of Figures 5A to 5D only detects the magnetic field in the second direction D2 and is not affected by the magnetic fields in the first direction D1 and the third direction D3 And because the structure of the third phosic bridge of FIG. 6A to FIG. 6D only detects the magnetic field in the third direction D3 and is not affected by the magnetic field in the first direction D1 and the second direction D2, so no matter the outside The magnetic field is a component having which of the first direction D1 to the third direction D3, or has a component in the first direction D1 to the third direction D3, or an external magnetic field The field is 0, and the first, second, and third Huisi bridges can be used to separately detect the components of the external magnetic field in the first direction D1, the second direction D2, and the third direction D3, and according to the measured The components are calculated as vector sums to obtain the magnitude and direction of the external magnetic field. In other words, the magnetic field sensing module 100 of the embodiment can achieve three-axis magnetic field measurement.

In the magnetic field sensing module 100 of the present embodiment, since the external magnetic field is bent by the magnetic flux concentrator 110, the sensing directions S of the plurality of unidirectional magnetic sensors 120 can be substantially the same, so the magnetic field The sensing module 100 can achieve multi-axis magnetic field sensing under a relatively simplified structure, thereby reducing the difficulty and cost of manufacturing the magnetic field sensing module 100.

In addition, the circuits of the first, second and third Huisi bridges can be formed in three different sub-times in one cycle time by means of circuit switch design to measure externally at different sub-times respectively. The components B _X , B _Y and B _{Z of the} magnetic field in the first direction D1, the second direction D2, and the third direction D3. In this way, even if the first phosic bridge and the third phoenix bridge share the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4, the first operation can still operate normally, because the first Huisi bridge and the first Sanhuisi and the bridge are formed in different sub-times. When the first, second, and third squad bridges are sequentially formed in a plurality of cycle times, the magnetic field sensing module 100 can instantly monitor the change of the external magnetic field.

In another embodiment, the first singular bridge and the third singular bridge may not share the unidirectional magnetic sensor 120b, but may be respectively adjacent to the unidirectional magnetic sensors 120b1, 120b2, 120b3, and 120b4. Additional configuration of four single-direction magnetic senses The detector 120b (not shown in FIGS. 4A to 6D, but in the following embodiments, this concept will be illustrated in other drawings). In other words, the other unidirectional magnetic sensors 120b disposed at positions corresponding to the two sides of the magnetic flux concentrators 110 arranged in the second direction D2 are coupled to the third singular bridge, and are used for sensing The component of the external magnetic field in the third direction D3 is measured. In this case, the first, second and third Huisi bridges may be formed in a plurality of different sub-times in one cycle time, but may also be present at the same time.

In addition, in other embodiments, since the unidirectional magnetic sensor 120c is actually unresponsive to the external magnetic field, the unidirectional magnetic sensor 120c (eg, the unidirectional magnetic sensors 120c1 and 120c2) may be replaced. The resistors (for example, two resistors respectively), and the resistance value of the resistor and the original resistance value of the single-direction magnetic sensor 120a in the second Huisi bridge are not subjected to the external magnetic field. Same on the same. In other words, the magnetic field sensing module 100 can include a plurality of resistors coupled to the two-way magnetic sensors 120a disposed at positions corresponding to the magnetic flux concentrators 110 to form a second Huisi bridge. And used to sense the component of the external magnetic field in the second direction D2.

7A is a top view of a magnetic field sensing module according to another embodiment of the present invention, and FIG. 7B is a first view of the magnetic field sensing module of FIG. 7A for measuring a magnetic field in the x direction; 7C illustrates a second sigma bridge of the magnetic field sensing module of FIG. 7A for measuring a y-direction magnetic field, and FIG. 7D illustrates a magnetic field sensing module of FIG. 7A for measuring a z-direction magnetic field. The third Huisi is the same as the bridge. Referring to FIG. 7A to FIG. 7D, the magnetic field sensing module 100d of the embodiment and the magnetic field sensing module of FIG. 4A Similarly, the difference between the two is due to the difference in the number of flux concentrators 110 and unidirectional magnetic sensors 120. In fact, the present invention does not limit the number of flux concentrators 110 and unidirectional magnetic sensors 120 in the magnetic field sensing module as long as these unidirectional magnetic sensors 120 are configured relative to the flux concentrator 110. In the relative position corresponding to FIG. 4A, FIG. 7A to FIG. 7D are only one example, and the invention is not limited thereto. In FIGS. 7A to 7D, the position of the unidirectional magnetic sensor 120b indicating X is corresponding to the position of the unidirectional magnetic sensor 120b in FIG. 4A, that is, the unidirectional magnetic sensor 120b indicating X. It is a position disposed on both sides of the magnetic flux concentrator 110 arranged in the second direction D2. Further, the position of the unidirectional magnetic sensor 120d indicating Z is corresponding to the position of the unidirectional magnetic sensor 120b in FIG. 4A, and the unidirectional magnetic sensor 120b indicating X and the unidirectional magnetic indicating Z The sensor 120d respectively forms a first Huisi bridge (as shown in FIG. 7B) and a third Huisi bridge (as shown in FIG. 7C), which is the first Huisi bridge mentioned in the above embodiment. There is no sharing of a single-directional magnetic sensor with the third Huisi bridge. In addition, the unidirectional magnetic sensors 120a and 120c labeled Y form a second Huisi bridge. In addition, in the embodiment, for the unidirectional magnetic sensors 120b and 120d disposed between the adjacent two magnetic flux concentrators 110, they are not disposed in the adjacent two magnetic flux concentrators 110. On the middle line, it will be closer to one of the flux concentrators 110, however, the unidirectional magnetic sensor 120a will be disposed on the center line between the adjacent two flux concentrators 110.

In the first bridge with the benefits Division, depicted in FIG. 7B, a voltage supply terminal VDD in one direction sequentially through magnetic sensors 120b1 ', 120b2' and 120b3 'after arrival the voltage output terminal V _1X, and the output voltage The terminal V _1X passes through the single-directional magnetic sensors 120b4', 120b5' and 120b6' sequentially before reaching the ground GND. On the other hand, the voltage supply terminal VDD passes through the single-direction magnetic sensors 120b7', 120b8', and 120b9' sequentially, and then reaches the voltage output terminal V _2X , and the voltage output terminal V _2X sequentially passes the single-direction magnetic sensing. The devices 120b10', 120b11' and 120b12' arrive at the ground GND. Further, the sensing directions S of the unidirectional magnetic sensors 120b1' to 120b12' are all oriented in the +y direction. That is, the position and function of the unidirectional magnetic sensors 120b1', 120b2', and 120b3' correspond to the position and function of the unidirectional magnetic sensor 120b3 of FIG. 4A, and the unidirectional magnetic sensor 120b4', The positions and functions of 120b5' and 120b6' correspond to the position and function of the single-direction magnetic sensor 120b1 of FIG. 4A, and the positions and functions of the single-direction magnetic sensors 120b7', 120b8' and 120b9' correspond to the figure. The position and function of the unidirectional magnetic sensor 120b4 of the 4A, and the position and function of the unidirectional magnetic sensors 120b10', 120b11' and 120b12' correspond to the position and function of the unidirectional magnetic sensor 120b2 of FIG. 4A. . Therefore, the first singular bridge of FIG. 7B is different from the first singular bridge of FIG. 4B except for the number of the unidirectional magnetic sensors 120b, and the power supply terminal VDD and the ground GND are connected to FIG. 4B. The method is the opposite. The operation principle of the first singular bridge of FIG. 4A and FIG. 7B is similar and can be analogized, so that the operation details of the first singular bridge of FIG. 7B will not be explained in detail again.

In addition, in the second sigma bridge of FIG. 7C, the voltage supply terminal VDD is connected to the voltage output terminal V _2Y via the unidirectional magnetic sensor 120a1 ′, and the voltage output terminal V _2Y is sequentially transmitted via the unidirectional magnetic field. The detectors 120c1', 120c2' and 120c3' are connected to the ground GND. On the other hand, the voltage supply terminal VDD is sequentially connected to the voltage output terminal V _1Y via the unidirectional magnetic sensors 120c4', 120c5' and 120c6', and the voltage output terminal V _1Y is connected via the unidirectional magnetic sensor 120a2'. To ground GND. That is, the position and function of the unidirectional magnetic sensor 120a1' corresponds to the position and function of the unidirectional magnetic sensor 120a1 of FIG. 5B, and the positions of the unidirectional magnetic sensors 120c1', 120c2', and 120c3' The function and function correspond to the position and function of the unidirectional magnetic sensor 120c2 of FIG. 5B. The position and function of the unidirectional magnetic sensors 120c4', 120c5' and 120c6' correspond to the unidirectional magnetic sensor of FIG. 5B. The position and function of the 120c1, and the position and function of the unidirectional magnetic sensor 120a2' corresponds to the position and function of the unidirectional magnetic sensor 120a2 of FIG. 5B.

In addition, in the third Huisi bridge of FIG. 7D, the voltage supply terminal VDD is sequentially connected to the voltage output terminal V _1Z via the single-direction magnetic sensors 120d4, 120d5 and 120d6, and the voltage output terminal V _1Z is sequentially It is connected to the ground GND via the unidirectional magnetic sensors 120d1, 120d2, and 120d3. On the other hand, the voltage supply terminal VDD is sequentially connected to the voltage output terminal V _2Z via the unidirectional magnetic sensors 120d9, 120d8 and 120d7, and the voltage output terminal V _2Z is sequentially passed through the single-direction magnetic sensors 120d12, 120d11. And 120d10 is connected to the ground GND. That is, the positions and functions of the unidirectional magnetic sensors 120d4, 120d5, and 120d6 correspond to the position and function of the unidirectional magnetic sensor 120b1 of FIG. 6B, and the positions of the unidirectional magnetic sensors 120d1, 120d2, and 120d3. The function and function correspond to the position and function of the unidirectional magnetic sensor 120b3 of FIG. 6B. The position and function of the unidirectional magnetic sensors 120d9, 120d8 and 120d7 correspond to the position of the unidirectional magnetic sensor 120b4 of FIG. 6B. And the function, and the position and function of the unidirectional magnetic sensors 120d12, 120d11 and 120d10 correspond to the position and function of the unidirectional magnetic sensor 120b2 of FIG. 6B, wherein the sensing of the unidirectional magnetic sensors 120d1~120d12 The directions S are all oriented in the y direction.

7A to FIG. 7D and FIG. 4A to FIG. 6D, the magnetic field sensing module 100d of the present embodiment can also implement the first, second, and third magnetic field sensing modules 100 similar to those of FIGS. 4A-6D. Huisi is connected to the bridge to achieve multi-axial magnetic field sensing. In addition, the first, second, and third Huisi bridges in the magnetic field sensing module 100d of the present embodiment are both in series with the first, second, and third Huisi bridges of FIG. 4A to FIG. 6D. More unidirectional magnetic sensors are connected, so it can have a more sensitive sensing effect.

8A is a top view of a magnetic field sensing module according to another embodiment of the present invention, and FIG. 8B is a first view of the magnetic field sensing module of FIG. 8A for measuring a magnetic field in the x direction; 8C illustrates a second sigma bridge of the magnetic field sensing module of FIG. 8A for measuring a y-direction magnetic field, and FIG. 8D illustrates a magnetic field sensing module of FIG. 8A for measuring a z-direction magnetic field. The third Huisi is the same as the bridge. 8A to 8D, the magnetic field sensing module 100e of the present embodiment is similar to the magnetic field sensing module 100d of FIGS. 7A to 7D, and the difference between the two is in the magnetic field sensing module 100e of the embodiment. The first Huisi bridge and the third Huisi bridge share the single direction magnetic sensor 120b. In FIGS. 8A to 8B, the unidirectional magnetic sensor 120b labeled "X or Z" is used to sense magnetic fields in the x direction and the z direction, respectively, in two different sub-times in one cycle time.

In this embodiment, the first, second, and third Huisi bridges are respectively formed in three different sub-times in one cycle time. When the first sigma bridge is formed as shown in FIG. 8B, the voltage supply terminal VDD is switched to be connected to the terminal B and the terminal E, and the ground terminal is switched to be connected to the terminal C and the terminal D, at this time, the voltage sequentially supply terminal VDD via a unidirectional magnetic sensors 120b1 ", 120b2" and 120b3 "output terminal connected to the voltage V _1, and V ₁ is the voltage output terminal sequentially via the unidirectional magnetic sensors 120b4", 120b5 " And 120b6" is connected to ground GND. On the other hand, the voltage supply terminal VDD is sequentially connected to the voltage output terminal V ₂ via the unidirectional magnetic sensors 120b7", 120b8" and 120b9", and the voltage output terminal V _{2 is} sequentially passed through the unidirectional magnetic sensor 120b10" , 120b11" and 120b12" are connected to the ground GND.

That is, the positions and functions of the unidirectional magnetic sensors 120b1", 120b2" and 120b3" correspond to the position and function of the unidirectional magnetic sensor 120b3 of FIG. 4A, the unidirectional magnetic sensor 120b4", The positions and functions of 120b5" and 120b6" correspond to the position and function of the single-direction magnetic sensor 120b1 of FIG. 4A, and the positions and functions of the single-direction magnetic sensors 120b7", 120b8" and 120b9" correspond to the figure. The position and function of the unidirectional magnetic sensor 120b4 of the 4A, and the position and function of the unidirectional magnetic sensors 120b10", 120b11" and 120b12" correspond to the position and function of the unidirectional magnetic sensor 120b2 of FIG. 4A. .

When the second sigma bridge is formed as shown in FIG. 8C, the voltage supply terminal VDD is switched to be connected to the terminal A, and the ground GND is switched to be connected to the terminal F. At this time, the voltage supply terminal VDD is connected to the voltage output terminal V ₂ via the unidirectional magnetic sensor 120a1', and the voltage output terminal V ₂ is sequentially connected via the unidirectional magnetic sensors 120c3', 120c2' and 120c1'. To ground GND. On the other hand, is a voltage supply terminal VDD via sequential uni-directional magnetic sensors 120c4 ', 120c5' and 120c6 'connected to the voltage output terminal V _1, and V ₁ is the voltage output terminal via a unidirectional magnetic sensors 120a2' Connect to ground GND.

That is, the position and function of the unidirectional magnetic sensor 120a1' corresponds to the position and function of the unidirectional magnetic sensor 120a1 of FIG. 5B, and the positions of the unidirectional magnetic sensors 120c3', 120c2' and 120c1' The function and function correspond to the position and function of the unidirectional magnetic sensor 120c2 of FIG. 5B. The position and function of the unidirectional magnetic sensors 120c4', 120c5' and 120c6' correspond to the unidirectional magnetic sensor of FIG. 5B. The position and function of the 120c1, and the position and function of the unidirectional magnetic sensor 120a2' corresponds to the position and function of the unidirectional magnetic sensor 120a2 of FIG. 5B. Furthermore, the sensing directions S of the unidirectional magnetic sensors 120a1', 120a2' and 120c1'~120c6' all face the y direction.

When the second sigma bridge is formed as shown in FIG. 8D, the voltage supply terminal VDD is switched to be connected to the terminal B and the terminal D, and the ground GND is switched to be connected to the terminal C and the terminal E. At this time, the voltage should power terminal VDD via sequential uni-directional magnetic sensors 120b1 ", 120b2" and 120b3 'connected to the voltage output terminal V _1, V ₁ and the voltage output terminal sequentially via a unidirectional magnetic sensors 120b4 " , 120b5" and 120b6" are connected to the ground GND. On the other hand, the voltage supply terminal VDD is sequentially connected to the voltage output terminal V ₂ via the single-direction magnetic sensors 120b12", 120b11" and 120b10", and the voltage output terminal V ₂ is sequentially passed through the single-direction magnetic sensor 120b9. ", 120b8" and 120b7" are connected to ground GND.

The voltage output terminal and the ground terminal are connected to the terminals A to F by switching in the above manner, and the magnetic field sensing module 100e can be in three sub-times in one cycle time. The first Huisi Tongqiao, the Second Huisi Tongqiao and the Third Huisi same bridge are respectively formed to sense the magnetic fields in the x direction, the y direction and the z direction, respectively. The switching between the voltage output terminal and the ground terminal with respect to the terminals A~F can be achieved by using a switching circuit in the integrated circuit, and the switching circuits can be integrated into an application specific integrated circuit (ASIC), or The entire magnetic field sensing module 100e can also be integrated in the same chip with a specific application integrated circuit.

The first, second, and third sigma bridges in the magnetic field sensing module 100d of FIG. 7A to FIG. 7D respectively have respective unidirectional magnetic sensors 120b, 120a and 120d, FIGS. 8A to 8D. The first and third sigma bridges in the magnetic field sensing module 100e share the unidirectional magnetic sensor 120b, so the magnetic field sensing module 100e of FIG. 8 has a small size, a simple design, and a simple wiring. The advantages of the electrode pads are small, and the lines of these Huisi bridges can even be completed by using a single layer of redistribution layer (RDL). However, the magnetic field sensing module 100d of FIGS. 7A-7D has the advantage of independently adjusting the voltage gain values of the output voltages of the first, second, and third Huisi bridges, that is, the voltage is When analogous, you can adjust its voltage gain value. In this way, by independently adjusting the voltage gain values, the same magnetic field magnitudes in the x, y, and z squares can be matched to the same magnitude of the voltage value, thereby simplifying the operation of the back end (eg, digital circuit). design.

Referring to FIG. 1A, FIG. 1B and FIG. 1C again, an embodiment of the present invention provides a measurement method for measuring an external magnetic field. The measuring method comprises changing the magnetic field distribution of the external magnetic field to make the component of the external magnetic field in the first direction D1, the second The component in the direction D2 and the component in the third direction D3 are converted to the second direction D2 at a plurality of different positions. In the present embodiment, the method of changing the magnetic field distribution of the external magnetic field includes arranging a plurality of magnetic flux concentrators 110 in the second direction D2 to change the distribution of the external magnetic field, wherein each magnetic flux concentrator 110 is along the first direction D1 extends. The case of changing the magnetic field can be illustrated with reference to FIGS. 2A to 2C.

Moreover, these different positions described above are, for example, the positions at which the one-way magnetic sensors 120 are disposed. In addition, as shown in the embodiment of FIGS. 4A to 6D, the components B _X , B _y and B _{Z of the} external magnetic field are respectively guided by the magnetic flux concentrator 110 to the direction having the component in the y direction at different positions. on. Furthermore, the measuring method further comprises sensing the magnitude of the magnetic field in the second direction D2 at the different positions to measure the component size of the external magnetic field in the first direction D1 and the component size in the second direction D2. And the component size in the third direction D3. Alternatively, as shown in the embodiment of FIGS. 4A to 6D, the unidirectional magnetic sensor 120 is disposed at positions of the unidirectional magnetic sensors 120a, 120b, and 120c as shown in FIGS. 4A to 6D to sense the outside. The component B _X , the component B _Y and the component B _{Z of the} magnetic field.

The measurement method of this embodiment may select a first portion of the unidirectional magnetic sensors 120 (for example, the unidirectional magnetic sensor 120b) to be coupled to the first Wheatstone bridge, and select the unidirectional magnetic sensors. A second portion of 120 (eg, unidirectional magnetic sensors 120a and 120c) is coupled to a second Wheatstone bridge, and a first portion of the unidirectional magnetic sensors 120 is selected (eg, a unidirectional magnetic sensor) 120b) coupled into a third Wheatstone bridge. In addition, the measuring method of the embodiment can measure the component B _X of the external magnetic field in the first direction D1 by using the first Wheatstone bridge, the second Wheatstone bridge, and the third Wheatstone bridge. The size of the component B _Y in the second direction D2 and the size of the component B _Z in the third direction D3, wherein the order of the unidirectional magnetic sensors 120b is coupled in the third sigma bridge Unlike the order in which the unidirectional magnetic sensors 120b are coupled in the first singular bridge.

In another embodiment, the measuring method may include selecting a first portion of the unidirectional magnetic sensors 120 (eg, the unidirectional magnetic sensor 120b) to be coupled to a first Wheatstone bridge, and selecting the unidirectional magnetic A second portion of the sensor 120 (eg, the unidirectional magnetic sensors 120a and 120c) is coupled to a second Wheatstone bridge, and an additional third portion of the unidirectional magnetic sensor 120 is coupled. Connected to a third Wheatstone bridge, wherein the position and function of the additional third portion corresponds to the first portion, such as the single direction magnetic sensor 120d of FIG. 7A.

In the measuring method of the present embodiment, since the external magnetic field is converted to the same direction by changing the magnetic field distribution of the external magnetic field, it is possible to actually reach the plurality of external magnetic fields in the same direction. Axial magnetic field sensing. Therefore, this measurement method can achieve multiple axial magnetic field sensing in a relatively simple manner. In addition, the above measurement method is also implemented by using the other magnetic field sensing modules described above.

9A-9F are schematic side views showing a flow of a method of fabricating a magnetic field sensing module according to an embodiment of the present invention. Referring to FIG. 9A to FIG. 9F, the magnetic field sensing module of the present embodiment can be used to fabricate the magnetic field sensing module 100 or the magnetic field sensing module of other embodiments, and the magnetic field sensing module is fabricated as follows. Group 100 is an example. This production method includes the following steps. First, please refer to FIG. 9A, providing a substrate 130. Next, a magnetic sensing multilayer film structure 150 is formed on the substrate 130, wherein the magnetic sensing multilayer film structure 150 is, for example, a pinned layer 122, a pinned layer 124, a spacer layer 126, and freely stacked on the substrate from bottom to top. Layer 128 (as shown in Figure 3A). In the present embodiment, the sensing direction of the magnetic sensing multilayer film structure 150 (ie, the pinning direction E1 of FIG. 3A) is substantially parallel to the second direction D2.

Then, in this embodiment, a photoresist layer 160 may be formed on the magnetic sensing multilayer film structure 150, and then the photoresist layer 160 is patterned to form patterned light as shown in FIG. 9B. Resistive layer 162. The patterned photoresist layer 162 has an opening 163 exposing the first portion 152 of the magnetic sensing multilayer film structure 150, and the patterned photoresist layer 162 covers the second portion 154 of the magnetic sensing multilayer film structure 150. . The method of patterning the photoresist layer 160 can be accomplished using steps in a typical lithography process.

Thereafter, the first portion 152 of the magnetic sensing multilayer film structure 150 is etched, wherein the remaining second portion 154 of the magnetic sensing multilayer film structure 150 forms a plurality of unidirectional magnetic sensors 120 that are separated from one another. In the present embodiment, the etchant 170 can be etched through the opening 163 of the patterned photoresist layer 162 to etch the first portion 152 of the magnetic sensing multilayer film structure 150. The etchant 170 may be an etchant in a wet etch or a plasma in a dry etch. Then, the patterned photoresist layer 160 is removed. Next, as shown in FIG. 9C, an insulating layer 140 covering the substrate 130 and the unidirectional magnetic sensors 120 is formed.

Then, as shown in FIG. 9D, a ferromagnetic material layer 190 is formed on the insulating layer 140. Thereafter, as illustrated in FIGS. 9E and 9F, the ferromagnetic material layer 190 is patterned to form a plurality of magnetic flux concentrators 110 that are separated from each other. In this embodiment, After the step of FIG. 9D, a patterned photoresist layer 210 may be formed on the ferromagnetic material layer 190 as illustrated in FIG. 9E. The patterned photoresist layer 210 may be formed by first coating a continuous photoresist layer, and then exposing and developing the continuous photoresist layer into a pattern as shown in FIG. 9E by using the steps in a general lithography process. Photoresist layer 210. Next, the etching material 220 is passed through the opening 212 of the patterned photoresist layer 210 to etch a portion of the ferromagnetic material layer 190 that is not covered by the patterned photoresist layer 210, and the remaining unetched ferromagnetic material layer 190 is formed. A plurality of magnetic flux concentrators 110 separated from each other. The patterned photoresist layer 210 is then removed.

As with the one illustrated in FIG. 1A, each flux concentrator 110 extends along a first direction D1 and the flux concentrators 110 are aligned along a second direction D2. In the present embodiment, the first direction D1 and the second direction D2 are substantially parallel to the substrate 130. The unidirectional magnetic sensors 120 are respectively disposed below the position between the magnetic flux concentrators 110 (for example, the unidirectional magnetic sensor 120a), and the two magnetic flux concentrators 110 are arranged in the second direction D2. Below the position of the side (for example, the unidirectional magnetic sensor 120b) and below the flux concentrators 110, for example, directly below (for example, the unidirectional magnetic sensor 120c). So far, the production of the magnetic field sensing module 100 is completed.

In the method for fabricating the magnetic field sensing module of the present embodiment, since a magnetic sensing multilayer film structure 150 is etched into a plurality of single-directional magnetic sensors 120 separated from each other, the magnetic flux concentrator 110 is formed. To complete the fabrication of the multi-axial magnetic field sensing module 100. Therefore, the manufacturing method can produce a magnetic field sensing module capable of achieving multi-axial magnetic field sensing by using a relatively simple manufacturing process, thereby saving process time and manufacturing cost. In addition, in the manufacturing method of the magnetic field sensing module of the embodiment, The fabrication of the magnetic field sensing module 100 can be accomplished using a single wafer process. Therefore, the method for fabricating the magnetic field sensing module of the present embodiment can utilize a relatively simple process and a lower process than the process of using two or more wafers to fabricate a multi-axial magnetic field sensing module. The manufacturing cost is to produce a multi-axial magnetic field sensing module.

It is worth noting that the circuit connection of the first Huisi Bridge, the Second Huisi Bridge and the Third Huisi Bridge is not limited to the one described in the above embodiment. Under the same component configuration, Different circuit connections can be used to form the first Huisi bridge, the second Huisi bridge and the third Huisi bridge, but the functions and effects achieved are the same or similar, and the following is another An embodiment will illustrate this point.

10A illustrates a circuit configuration of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to a magnetic field sensing module of another embodiment of the present invention for sensing a magnetic field parallel to the x direction. The resistance changes. FIG. 10B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 10A. Figure 10C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 10A. 11A illustrates a circuit configuration of a unidirectional magnetic sensor when an external magnetic field parallel to the x direction is applied to a magnetic field sensing module of another embodiment of the present invention for sensing a magnetic field parallel to the z direction. The resistance changes. FIG. 11B illustrates the change in resistance of the unidirectional magnetic sensor when an external magnetic field parallel to the y direction is applied to the circuit architecture of FIG. 11A. Figure 11C illustrates the change in resistance of a unidirectional magnetic sensor when an external magnetic field parallel to the z-direction is applied to the circuit architecture of Figure 11A.

Referring to FIG. 10A to FIG. 10C and FIG. 11A to FIG. 11C , the function of the first Huisi bridge of FIG. 10A to FIG. 10C of the present embodiment is similar to the function of the first Huisi bridge of FIG. 4A , and the embodiment is The function of the third Huisi bridge of FIGS. 11A to 11C is similar to that of the third Huisi bridge of FIG. 6A, and the difference is as follows. In FIGS. 10A to 10C of the first bridge Division and benefits, the voltage supply terminal VDD is connected via a unidirectional magnetic sensors 120b1 to the voltage output terminal V _1X, and the voltage output terminal V _1X is connected via a unidirectional magnetic sensors 120b2 To ground GND. On the other hand, the voltage supply terminal VDD is connected to the voltage output terminal V _2X via the unidirectional magnetic sensor 120b3, and the voltage output terminal V _2X is connected to the ground terminal GND via the unidirectional magnetic sensor 120b4. In FIG. 10A, since the resistance of the unidirectional magnetic sensor 120b1 is greater than the resistance of the unidirectional magnetic sensor 120b3, the resistance of the unidirectional magnetic sensor 120b2 is smaller than the resistance of the unidirectional magnetic sensor 120b4, so the voltage output The voltage at terminal V _1X is less than the voltage at voltage output terminal V _2X , so the voltage difference between voltage output terminal V _1X and voltage output terminal V _2X forms a signal corresponding to component B _X of the external magnetic field. In FIG. 10B, since the resistances of the four unidirectional magnetic sensors 120b1 to 120b4 are both lowered, the voltage difference between the voltage output terminal V _1X and the voltage output terminal V _2X is 0, and no signal is generated. In FIG. 10C, since the resistances of the unidirectional magnetic sensors 120b1 and 120b2 are both decreased, and the resistances of the unidirectional magnetic sensors 120b3 and 120b4 are both decreased, the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor are used. The ratio of 120b2 is substantially equal to the ratio of the unidirectional magnetic sensor 120b3 to the unidirectional magnetic sensor 120b4, so that the voltage difference between the voltage output terminal V _1X and the voltage output terminal V _2X is zero, and no signal is generated. Therefore, the sensing of the x direction can also be achieved by the first Huisi bridge of FIG. 10A.

In FIGS. 11A to 11C benefits Division and a third bridge, the voltage supply terminal VDD is connected via a unidirectional magnetic sensors 120b1 to the voltage output terminal V _1Z, and the voltage output terminal V _1Z is connected via a unidirectional magnetic sensors 120b4 To ground GND. On the other hand, the voltage supply terminal VDD is connected to the voltage output terminal V _2Z via the unidirectional magnetic sensor 120b3, and the voltage output terminal V _2Z is connected to the ground GND via the unidirectional magnetic sensor 120b4. In FIG. 11A, the resistances of the unidirectional magnetic sensors 120b1 and 120b4 both rise, and the resistances of the unidirectional magnetic sensors 120b3 and 120b2 decrease, so the unidirectional magnetic sensor 120b1 and the unidirectional magnetic sensor 120b4 The ratio is substantially equal to the ratio of the unidirectional magnetic sensor 120b3 to the unidirectional magnetic sensor 120b2, so the voltage output terminal V _1Z and the voltage output terminal V _2Z are substantially equal in voltage. Therefore, the voltage difference between the voltage output terminal V _1Z and the voltage output terminal V _2Z is 0 without signal output. In FIG. 11B, the resistances of the four unidirectional magnetic sensors 120b1 to 120b4 are all decreased, so that the voltage difference between the voltage output terminal V _1Z and the voltage output terminal V _2Z is 0 without signal output. In FIG. 11C, the resistance of the unidirectional magnetic sensor 120b1 is greater than the resistance of the unidirectional magnetic sensor 120b3, and the resistance of the unidirectional magnetic sensor 120b4 is smaller than the resistance of the unidirectional magnetic sensor 120b2, thus the voltage output. The voltage of V _1Z is less than the voltage of the voltage output terminal V _2Z , so the voltage difference between the voltage output terminal V _1Z and the voltage output terminal V _2Z forms a signal corresponding to the component B _Z of the external magnetic field. Therefore, the third Huisi bridge shown in FIG. 11A to FIG. 11C can also be used to sense the magnetic field in the z direction.

In summary, in the magnetic field sensing module of the embodiment of the present invention, The magnetic flux concentrator bends the external magnetic field, so that the sensing directions of the plurality of unidirectional magnetic sensors can be substantially the same, so the magnetic field sensing module can achieve a multi-axial magnetic field under a simplified structure. Sensing, thereby reducing the difficulty and cost of manufacturing the magnetic field sensing module. In the measuring method of the embodiment of the present invention, since the external magnetic field is converted to the same direction by changing the magnetic field distribution of the external magnetic field, it is possible to actually reach the external magnetic field in the same direction. Multiple axial magnetic field sensing. Therefore, this measurement method can achieve multiple axial magnetic field sensing in a relatively simple manner. In the method for fabricating the magnetic field sensing module of the embodiment of the present invention, since a magnetic sensing multilayer film structure is etched into a plurality of single-directional magnetic sensors separated from each other, and then formed with a magnetic flux concentrator, To complete the fabrication of the multi-axial magnetic field sensing module. Therefore, the manufacturing method can produce a magnetic field sensing module capable of achieving multi-axial magnetic field sensing by using a relatively simple manufacturing process.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧Magnetic sensing module

110‧‧‧Magnetic concentrator

120, 120a, 120b, 120c‧‧‧ single direction magnetic sensor

130‧‧‧Substrate

D1‧‧‧ first direction

D2‧‧‧ second direction

S‧‧‧Sensing direction

x, y, z‧‧ direction

Claims (23)

A magnetic field sensing module includes: a plurality of magnetic flux concentrators, each of the magnetic flux concentrators extending along a first direction, and the magnetic flux concentrators are arranged along a second direction; and a plurality of single The directional magnetic sensors are respectively disposed at positions corresponding to the magnetic flux concentrators and corresponding to the two sides of the magnetic flux concentrators arranged in the second direction, wherein the unidirectional magnetic The sensing directions of the sensors are substantially the same. The magnetic field sensing module of claim 1, wherein the sensing directions of the one-way magnetic sensors are substantially parallel to the second direction. The magnetic field sensing module of claim 1, wherein the first direction is substantially perpendicular to the second direction. The magnetic field sensing module of claim 1, wherein the one-way magnetic sensors are disposed on a side of the magnetic flux concentrator on a third direction, wherein the third direction is substantially The upper direction is perpendicular to the first direction and the second direction. The magnetic field sensing module of claim 4, wherein the plurality of magnetic sensors are disposed at positions corresponding to the two sides of the magnetic flux concentrators arranged in the second direction. The first bridge is coupled to the first bridge, and is configured to sense a component of the external magnetic field in the first direction. The magnetic field sensing module of claim 5, wherein the magnetic field sensing module is disposed at a position corresponding to the magnetic flux concentrators and disposed on a side of the magnetic flux concentrators on the third direction The unidirectional magnetic sensors are coupled to a second singular bridge and are configured to sense a component of the external magnetic field in the second direction. The magnetic field sensing module of claim 6, wherein the other portion is disposed in the one-way magnetic sensing corresponding to the positions of the magnetic flux concentrators arranged on the two sides in the second direction The device is coupled to a third singular bridge, and is configured to sense a component of the external magnetic field in the third direction, wherein the order of coupling the unidirectional magnetic sensors in the third phosic bridge is different The sequence of coupling the unidirectional magnetic sensors in the first singular bridge. The magnetic field sensing module of claim 4, wherein the one-way magnetic sensors disposed at positions corresponding to the two sides of the magnetic flux concentrators arranged in the second direction are borrowed The first conductive path is coupled to the first and second bridges, and coupled to the third and second bridges by a second conductive path, the first and the same bridge are used to sense an external magnetic field. a component in the first direction, the third squad is used to sense a component of the external magnetic field in the third direction, and the first conductive path is coupled to the unidirectional magnetic sensor in a different order from the first The two conductive paths are coupled to the order of the one-way magnetic sensors. The magnetic field sensing module of claim 1, further comprising a plurality of resistors coupled to the one-way magnetic sensors disposed at positions corresponding to the magnetic flux concentrators The first bridge is used to sense the component of an external magnetic field in the second direction. The magnetic field sensing module of claim 1, wherein the single-direction magnetic sensors are giant magnetoresistive sensors, tunneling magnetoresistive sensors, or a combination thereof. The magnetic field sensing module of claim 1, wherein the residual flux of the magnetic flux concentrators is less than 10% of the saturation magnetization. A measuring method for measuring an external magnetic field, the measuring method comprising: changing a magnetic field distribution of the external magnetic field, the component of the external magnetic field in a first direction, a component in a second direction, and A third-party upward component converts at least a portion of the component to the second direction at a plurality of different locations; and sensing a magnitude of the magnetic field in the second direction at the different locations to measure the external magnetic field The component size in the first direction, the component size in the second direction, and the component size in the third direction. The measuring method of claim 12, wherein the method of changing a magnetic field distribution of the external magnetic field comprises arranging a plurality of magnetic flux concentrators in the second direction, and each of the magnetic flux concentrators is along the The first direction extends. The measuring method of claim 13, wherein the different positions include a position corresponding to the magnetic flux concentrators and an arrangement corresponding to the magnetic flux concentrators in the second direction The position on both sides. The measuring method according to claim 13, wherein the residual flux of the magnetic flux concentrators is less than 10% of the saturation magnetization. The measuring method of claim 12, wherein the first direction, the second direction, and the third direction are substantially perpendicular to each other. The measuring method of claim 12, wherein the magnitude of the magnetic field in the second direction is sensed at the different positions to measure a component of the external magnetic field in the first direction, The method of the component size in the second direction and the component size in the third direction includes: respectively setting a plurality of single-directional magnetic sensors at the different positions, wherein the The sensing direction of the single-direction magnetic sensor is the second direction; and a first portion of the single-direction magnetic sensors is coupled to form a first Wheatstone bridge, and the single-direction magnetic sensing is selected. A second portion of the device is coupled to a second Wheatstone bridge, and the first portion of the unidirectional magnetic sensors is coupled to a third Wheatstone bridge, and the first Wheats are utilized respectively. The bridge, the second Wheatstone bridge, and the third Wheatstone bridge measure the component size of the external magnetic field in the first direction, the component size in the second direction, and the third party An upward component size, wherein the order of coupling the unidirectional magnetic sensors in the third singular bridge is different from the order of coupling the unidirectional magnetic sensors in the first sigma bridge . The measuring method of claim 12, wherein the magnitude of the magnetic field in the second direction is sensed at the different positions to measure a component of the external magnetic field in the first direction, The method for sizing the component in the second direction and the component size in the third direction comprises: respectively arranging a plurality of single-directional magnetic sensors at the different positions, wherein the sensing of the single-direction magnetic sensors The direction of the second direction is selected; and a first portion of the single-direction magnetic sensors is coupled to form a first Wheatstone bridge, and a second portion of the single-direction magnetic sensors is coupled into one a second Wheatstone bridge, wherein a third portion of the unidirectional magnetic sensors is coupled to form a third Wheatstone bridge, and the first Wheatstone bridge and the second Wheatstone are respectively utilized. The same bridge and the third Wheatstone bridge measure the component size of the external magnetic field in the first direction, the component size in the second direction, and the component size in the third direction. A method for manufacturing a magnetic field sensing module, comprising: Providing a substrate; forming a magnetic sensing multilayer film structure on the substrate; etching a first portion of the magnetic sensing multilayer film structure, wherein a remaining second portion of the magnetic sensing multilayer film structure is formed to be separated from each other a unidirectional magnetic sensor; forming an insulating layer covering the substrate and the unidirectional magnetic sensors; and forming a plurality of magnetic flux concentrators on the insulating layer, wherein each of the magnetic flux concentrators is along a first direction extending, the magnetic flux concentrators are arranged along a second direction, the single-direction magnetic sensors are respectively disposed below the position between the magnetic flux concentrators, the magnetic flux concentrators Arranged below the positions on both sides in the second direction and below the flux concentrators. The method of manufacturing the magnetic field sensing module of claim 19, wherein the method of etching the portion of the magnetic sensing multilayer film structure comprises: forming a photoresist layer on the magnetic sensing multilayer film structure; Patterning the photoresist layer such that the patterned photoresist layer has an opening exposing the first portion of the magnetic sensing multilayer film structure, and the patterned photoresist layer covers the magnetic sense Detecting the second portion of the multilayer film structure; and passing the etchant through the patterned opening of the photoresist layer to etch the first portion of the magnetic sensing multilayer film structure. The method of manufacturing the magnetic field sensing module of claim 19, wherein the method of forming the magnetic flux concentrators on the insulating layer comprises: forming a ferromagnetic material layer on the insulating layer; The ferromagnetic material layer is patterned to form a plurality of magnetic flux concentrators that are separated from each other. The method of fabricating the magnetic field sensing module of claim 19, wherein the first direction and the second direction are substantially parallel to the substrate, and the first direction is substantially perpendicular to the second direction. The method for fabricating a magnetic field sensing module according to claim 19, wherein the step of forming the magnetic sensing multilayer film structure on the substrate comprises: substantially sensing a sensing direction of the magnetic sensing multilayer film structure Parallel to the second direction.