TW201518297A - Thiophene derivative, use thereof, and production method of thiophene derivative - Google Patents

Thiophene derivative, use thereof, and production method of thiophene derivative Download PDF

Info

Publication number
TW201518297A
TW201518297A TW103121013A TW103121013A TW201518297A TW 201518297 A TW201518297 A TW 201518297A TW 103121013 A TW103121013 A TW 103121013A TW 103121013 A TW103121013 A TW 103121013A TW 201518297 A TW201518297 A TW 201518297A
Authority
TW
Taiwan
Prior art keywords
group
substituted
carbon atoms
carbon
alkenyl
Prior art date
Application number
TW103121013A
Other languages
Chinese (zh)
Other versions
TWI627169B (en
Inventor
Taichi Nakazawa
Naoki Nakaie
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201518297A publication Critical patent/TW201518297A/en
Application granted granted Critical
Publication of TWI627169B publication Critical patent/TWI627169B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D333/00Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/26Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D333/30Hetero atoms other than halogen
    • C07D333/32Oxygen atoms
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/655Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

A thiophene derivative represented by formula (1) is provided. (R1-R4 represent an alkyl, an alkenyl, an alkynyl, an alkoxy, an alkenyloxy, an alkynyloxy, an alkylthio, an alkynylthio, an aryloxy, a heteroaryloxy, an arylthio or a heteroarylthio; R5-R8 represent a hydrogen, an alkyl, an alkenyl, an alkynyl, an alkoxy, an alkenyloxy, an alkynyloxy, an alkylthio, an alkynylthio, an aryloxy, a heteroaryloxy, an arylthio or a heteroarylthio; and R9-R12 represent a hydrogen, an alkyl, an alkenyl, an alkynyl, an alkoxy, an alkenyloxy, an alkynyloxy, an alkylthio, an alkynylthio, or an aryl.)

Description

噻吩衍生物及其利用與噻吩衍生物之製造方法 Thiophene derivative and utilization thereof and method for producing thiophene derivative

本發明係關於噻吩衍生物及其利用以及噻吩衍生物之製造方法,更詳言之,是關於藉由至少於3位具有取代基之2-噻吩基而可於2、3、4及5位被取代之噻吩衍生物、利用上述衍生物作為其電荷輸送性物質,以及噻吩衍生物之製造方法。 The present invention relates to a thiophene derivative and its use, and a process for producing a thiophene derivative, and more particularly, to a 2, 3, 4 and 5 position by a 2-thienyl group having a substituent at least at the 3-position A substituted thiophene derivative, a derivative using the above derivative as a charge transporting substance, and a method for producing a thiophene derivative.

有機電致發光(以下稱為有機EL)元件中,發光層或電荷注入層方面,可使用由有機化合物所成的電荷輸送性薄膜。特別是,電洞注入層係擔任陽極與電洞輸送層或發光層之電荷的接受,且為用以達成有機EL元件之低電壓驅動及高亮度的重要機能。 In the organic electroluminescence (hereinafter referred to as an organic EL) device, a charge transporting film made of an organic compound can be used as the light-emitting layer or the charge injection layer. In particular, the hole injection layer serves as an electric charge for the anode and the hole transport layer or the light-emitting layer, and is an important function for achieving low voltage driving and high brightness of the organic EL element.

電洞注入層之形成方法,可大致上分為蒸鍍法所代表的乾式製程與旋轉塗佈法所代表的濕式製程,相較於此等各製程,濕式製程者可有效率地於大面積上製造平坦性高的薄膜。因此,在有機EL顯示器的大面積化逐漸進展的現今,可望以濕式製程來形成電洞注入層。 The method for forming the hole injection layer can be roughly divided into a dry process represented by the vapor deposition method and a wet process represented by the spin coating method. Compared with these processes, the wet process can be efficiently performed. A film having a high flatness is produced on a large area. Therefore, in the current progress of large-area organic EL displays, it is expected that a hole injection layer can be formed by a wet process.

有鑑於此,本發明者們正在開發具有可實現 適用於各種濕式製程同時在用於有機EL元件之電洞注入層時優異的EL元件特性之薄膜的電荷輸送性材料,以及對用於其中的有機溶劑溶解性良好的化合物(參考例如專利文獻1~4)。 In view of this, the inventors are developing and being achievable A charge transporting material suitable for various wet processes and a film having excellent EL element characteristics for a hole injection layer of an organic EL element, and a compound having good solubility in an organic solvent used therein (refer to, for example, the patent document) 1~4).

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]國際公開第2008/032616號 [Patent Document 1] International Publication No. 2008/032616

[專利文獻2]國際公開第2008/129947號 [Patent Document 2] International Publication No. 2008/129947

[專利文獻3]國際公開第2006/025342號 [Patent Document 3] International Publication No. 2006/025342

[專利文獻4]國際公開第2010/058777號 [Patent Document 4] International Publication No. 2010/058777

本發明係與至今所開發而來的上述專利文獻之技術相同地,以提供一種新穎的噻吩衍生物為目的,該噻吩衍生物可實現對有機溶劑顯示出良好的溶解性,同時可予以薄膜化而適用於電洞注入層時具有優異的壽命特性之有機EL元件。 The present invention is directed to a novel thiophene derivative which exhibits good solubility in an organic solvent and can be thinned in the same manner as the technique of the above-mentioned patent document developed so far. An organic EL element having excellent life characteristics when applied to a hole injection layer.

本發明者們為了達成上述目的一再地鑽研探討的結果發現,特定的噻吩衍生物除了對有機溶劑顯示出高溶解性之外,將其與摻雜物一起溶解於有機溶劑所調製 而成的塗漆,由此塗漆所得的薄膜具有高電荷輸送性,且將該薄膜適用於有機EL元件的電洞注入層時,可以實現優異的壽命特性,遂而完成本發明。 As a result of intensive studies conducted by the inventors of the present invention, it has been found that a specific thiophene derivative is prepared by dissolving it in an organic solvent together with a dopant in addition to exhibiting high solubility in an organic solvent. The lacquer obtained by the lacquering has a high charge transport property, and when the film is applied to a hole injection layer of an organic EL element, excellent life characteristics can be achieved, and the present invention has been completed.

即,本發明係提供下述噻吩衍生物及其利用,以及噻吩衍生物之製造方法。 That is, the present invention provides the following thiophene derivatives and their use, and a process for producing the thiophene derivatives.

1.一種噻吩衍生物,其特徵係下述式(1)所示者。 A thiophene derivative characterized by the following formula (1).

(式中,R1~R4各自獨立地表示可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基;R5~R8各自獨立地表示氫原子、可以Z1所取代之碳數 1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基;又,R5~R8不為氫原子時,R1與R5、R2與R6、R3與R7及/或R4與R8可各自互相地鍵結形成2價之基;R9~R12各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基或可以Z2所取代之碳數6~20之芳基;Z1表示鹵素原子、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20之炔基硫代基、碳數6~20之芳基、碳數6~20之芳基氧基、碳數2~20之 雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基;Z2表示鹵素原子、碳數1~20之烷基、碳數2~20之烯基、碳數2~20之炔基、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20之炔基硫代基、碳數6~20之芳基氧基、碳數2~20之雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基) (Wherein, R 1 ~ R 4 each independently represent Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 carbon atoms of the alkenyl group having 2 to 20 may be substituted with Z 1 of carbon an alkynyl group having 2 to 20, the sum can be substituted with Z 1 carbon atoms of the alkoxy group having 1 to 20, Z may be substituted with the 1 to 20 carbon atoms, alkenyl of 2 group, Z may be substituted with a carbon number of 2 the ~ 20 alkynyl group, Z may be substituted with a carbon number of the alkylthio group of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with the 1 carbon atoms, alkynyl group having 2 to 20 of the thio group, Z may be replaced by 2 carbon atoms of the aryloxy group of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z 2 can be The substituted arylthio group having 6 to 20 carbon atoms or the heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 ; R 5 to R 8 each independently represent a hydrogen atom, and may be Z 1 the substituent having 1 to 20 carbon atoms of the alkyl group may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with an alkynyl group of a carbon number of 2 to 20, Z may be substituted with a carbon number of 1 1 the ~ 20 alkoxy group, Z may be substituted with a carbon number of alkenyl group having 2 to 20, the Z can be substituted with the 1 to 20 carbon atoms, alkynyl of 2 group, Z 1 may be The substituted alkylthio group having a carbon number of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2-ylthio group, Z can be substituted with the group having 2 carbon atoms, an aryl group of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z may be substituted with the 2 carbon atoms of the aryl group having 6 to 20 sulfur a substituent or a heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 ; and, when R 5 to R 8 are not a hydrogen atom, R 1 and R 5 , R 2 and R 6 , R 3 and R 7 and/or R 4 and R 8 may each be bonded to each other to form a divalent group; and R 9 to R 12 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , the substituted alkenyl group Z 1 carbon of 2 to 20, Z may be substituted with an alkynyl group of a carbon number of 2 to 20 may be substituted with Z 1 of the carbon atoms of the alkoxy group having 1 to 20 may be substituted with Z 1 the alkenyl group having a carbon number of 2 to 20, Z may be substituted with a carbon number of the alkynyl group having 2 to 20, the Z can be substituted with a carbon number of the alkylthio group of 1 to 20, Z 1 can a substituted alkenylthio group having 2 to 20 carbon atoms, an alkynylthio group having 2 to 20 carbon atoms which may be substituted by Z 1 or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 2 ; Z 1 A halogen atom, an alkoxy group having 1 to 20 carbon atoms, an alkenyloxy group having 2 to 20 carbon atoms, an alkynyloxy group having 2 to 20 carbon atoms, an alkylthio group having 1 to 20 carbon atoms, and a carbon number 2 to 20 alkenylthio group, 2 to 20 alkynylthio group, carbon number 6 to 20 aryl group, carbon number 6 to 20 aryloxy group, carbon number 2 to 20 heteroaryl a oxy group, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms; Z 2 represents a halogen atom, an alkyl group having 1 to 20 carbon atoms, and a carbon number of 2 to 20 Alkenyl group, alkynyl group having 2 to 20 carbon atoms, alkoxy group having 1 to 20 carbon atoms, alkenyloxy group having 2 to 20 carbon atoms, alkynyloxy group having 2 to 20 carbon atoms, and carbon number 1 to 20 Alkylthio group, alkenylthio group having 2 to 20 carbon atoms, alkynylthio group having 2 to 20 carbon atoms, aryloxy group having 6 to 20 carbon atoms, heteroaryl group having 2 to 20 carbon atoms An oxy group, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms)

2.如1之噻吩衍生物,其中,R1~R4各自獨立地表示可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基。 2. A thiophene derivative of thiophene 1, wherein, R 1 ~ R 4 each independently represent Z can be substituted with the alkoxy group having 1 carbon atoms of 1 to 20, Z may be substituted with 1 C2-4 alkylene group of 2 to 20 of the group, Z may be substituted with an alkynyl group having a carbon number of 1 to 20 of the group 2, Z may be substituted with a carbon number of the alkylthio group of 1 to 20 may be substituted with Z 1 of the 2 to 20 carbon atoms alkenyl thio group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2-ylthio group, Z may be substituted with the group having 2 carbon atoms, an aryl group of 6 to 20, Z may be substituted with a carbon number of 2 2 the ~ 20 heteroaryl group, Z may be substituted with the 2 carbon atoms or arylthio group Z may be substituted with a carbon number of 2 hetero arylthio group of 6 to 20 2 to 20 of.

3.如1或2之噻吩衍生物,其中,R5~R8各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基或可以Z1所取代之碳數1~20之烷氧基。 3. A thiazole derivative thiophene 1 or 2, wherein, R 5 ~ R 8 each independently represent a hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 - 2 carbon atoms alkenyl group of 20 may be substituted with Z 1 of the carbon atoms of the alkynyl group having 2 to 20, or Z may be substituted with the alkoxy group having 1 carbon atoms of 1 to 20.

4.如1~3中任一項之噻吩衍生物,其中,R9~R12各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基或可以Z1所取代 之碳數2~20之炔基。 4. thiazol any one of 1 to 3, a polythiophene derivative, wherein, R 9 ~ R 12 each independently represent a hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 An alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms which may be substituted by Z 1 .

5.一種如1之噻吩衍生物之製造方法,其特徵係使下述式(2)所示之噻吩化合物與式(3)~(6)所示之三烷基錫烷基噻吩化合物在觸媒存在下反應。 A method for producing a thiophene derivative according to 1, which is characterized in that a thiophene compound represented by the following formula (2) and a trialkylstannylthiophene compound represented by the formula (3) to (6) are in contact with each other. The reaction exists in the presence of the medium.

(式中,Hal各自獨立地表示鹵素原子或擬鹵素基、Ra各自獨立地表示碳數1~20之烷基。R1~R12係與上述相同) (wherein Hal independently represents a halogen atom or a pseudohalogen group, and R a each independently represents an alkyl group having 1 to 20 carbon atoms. R 1 to R 12 are the same as described above)

6.一種電荷輸送性物質,其係由如1~4中任一項之噻吩衍生物所成者。 A charge transporting substance which is a thiophene derivative according to any one of 1 to 4.

7.一種電荷輸送性塗漆,其係包含如1~4中任一項之噻吩衍生物、摻雜物及有機溶劑。 A charge transporting paint comprising the thiophene derivative, a dopant, and an organic solvent according to any one of 1 to 4.

8.一種電荷輸送性薄膜,其係使用如7之電荷輸送性塗漆所製作者。 A charge transporting film produced by using a charge transporting paint such as 7.

9.一種電荷輸送性薄膜,其係包含如1~4中任一項之噻吩衍生物者。 A charge transporting film comprising the thiophene derivative according to any one of 1 to 4.

10.一種電子裝置,其係具備至少1層如8或9之電荷輸送性薄膜者。 An electronic device comprising at least one layer of a charge transporting film such as 8 or 9.

11.一種有機電致發光元件,其係具備至少1層如8或9之電荷輸送性薄膜者。 An organic electroluminescence device comprising at least one layer of a charge transporting film such as 8 or 9.

12.如11之有機電致發光元件,其中,前述電荷輸 送性薄膜係電洞注入層或電洞輸送層。 12. The organic electroluminescent device of 11, wherein said charge is transferred The film is a hole injection layer or a hole transport layer.

本發明之噻吩衍生物容易溶於有機溶劑,使此與摻雜物一起溶解於有機溶劑,可輕易地調製電荷輸送性塗漆。 The thiophene derivative of the present invention is easily dissolved in an organic solvent, and this is dissolved in an organic solvent together with the dopant, and the charge transporting paint can be easily prepared.

由本發明之電荷輸送性塗漆製作的薄膜,因顯示出高電荷輸送性之故,可適用為以有機EL元件為首的電子裝置用薄膜。特別是,將此薄膜適用於有機EL元件的電洞注入層,可獲得壽命特性優異的有機EL元件。 The film produced by the charge transporting paint of the present invention can be applied to a film for an electronic device including an organic EL device because it exhibits high charge transportability. In particular, this film is applied to a hole injection layer of an organic EL device, and an organic EL device excellent in life characteristics can be obtained.

又,本發明之電荷輸送性塗漆即使是在使用旋轉塗佈法或狹縫塗佈法等可於大面積成膜之各種濕式製程時,因可再現性佳地製造電荷輸送性優異的薄膜之故,近年來,對於在有機EL元件的領域中之進展亦可充分地對應。 In addition, the charge-transporting paint of the present invention is excellent in charge transportability because of reproducibility even when various wet processes capable of forming a large-area film by a spin coating method or a slit coating method are used. In recent years, the film has been sufficiently compatible with the progress in the field of organic EL elements.

〔實施發明之形態〕 [Formation of the Invention] 〔噻吩衍生物〕 [thiophene derivative]

有關本發明之噻吩衍生物,係如下述式(1)所示。 The thiophene derivative of the present invention is represented by the following formula (1).

式中,R1~R4各自獨立地表示可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基。 Wherein, R 1 ~ R 4 each independently represent Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with a carbon number of 1 alkynyl group of 2 to 20, Z may be substituted with an alkyl of 1 to 20 carbon atoms of the group may be substituted with Z 1 of 2 to 20 carbon atoms of the alkenyl group, Z may be substituted with the C2-4 1 20 of the alkynyl group, may be substituted with Z 1 of alkylthio group having a carbon number of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with 1 carbon of an alkynyl group having 2 to 20 of the thio group, Z may be replaced by 2 carbon atoms of the aryloxy group of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z 2 may be the The substituted arylthio group having 6 to 20 carbon atoms or the heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 .

R5~R8各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫 代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基。 R 5 ~ R 8 each independently represent a hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with a carbon number of 1 alkynyl group of 2 to 20, Z may be substituted with an alkyl of 1 to 20 carbon atoms of the group may be substituted with Z 1 of 2 to 20 carbon atoms of the alkenyl group, Z may be substituted with the C2-4 1 20 of the alkynyl group, may be substituted with Z 1 of alkylthio group having a carbon number of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with 1 carbon of an alkynyl group having 2 to 20 of the thio group, Z may be replaced by 2 carbon atoms of the aryloxy group of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z 2 may be the The substituted arylthio group having 6 to 20 carbon atoms or the heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 .

又,R5~R8不為氫原子時,R1與R5、R2與R6、R3與R7及/或R4與R8可互相鍵結而形成2價之基。 Further, when R 5 to R 8 are not a hydrogen atom, R 1 and R 5 , R 2 and R 6 , R 3 and R 7 and/or R 4 and R 8 may be bonded to each other to form a divalent group.

R9~R12各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基或可以Z2所取代之碳數6~20之芳基。 R 9 ~ R 12 each independently represent a hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with a carbon number of 1 alkynyl group of 2 to 20, Z may be substituted with an alkyl of 1 to 20 carbon atoms of the group may be substituted with Z 1 of 2 to 20 carbon atoms of the alkenyl group, Z may be substituted with the C2-4 1 20 of the alkynyl group, may be substituted with Z 1 of alkylthio group having a carbon number of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with 1 carbon of An alkynylthio group of 2 to 20 or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 2 .

Z1表示鹵素原子、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20之炔基硫代基、碳數6~20之芳基、碳數6~20之芳基氧基、碳數2~20之雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基。 Z 1 represents a halogen atom, an alkoxy group having 1 to 20 carbon atoms, an alkenyloxy group having 2 to 20 carbon atoms, an alkynyloxy group having 2 to 20 carbon atoms, an alkylthio group having 1 to 20 carbon atoms, Alkenylthio group having 2 to 20 carbon atoms, alkynylthio group having 2 to 20 carbon atoms, aryl group having 6 to 20 carbon atoms, aryloxy group having 6 to 20 carbon atoms, and carbon number 2 to 20 a heteroaryloxy group, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms.

Z2表示鹵素原子、碳數1~20之烷基、碳數2~20之烯基、碳數2~20之炔基、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20 之炔基硫代基、碳數6~20之芳基氧基、碳數2~20之雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基。 Z 2 represents a halogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and an alkene having 2 to 20 carbon atoms. Alkoxy group, alkynyloxy group having 2 to 20 carbon atoms, alkylthio group having 1 to 20 carbon atoms, alkenylthio group having 2 to 20 carbon atoms, and alkynylthio group having 2 to 20 carbon atoms An aryloxy group having 6 to 20 carbon atoms, a heteroaryloxy group having 2 to 20 carbon atoms, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms.

鹵素原子方面,可舉出氟、氯、溴、碘原子等。 Examples of the halogen atom include fluorine, chlorine, bromine, and iodine atoms.

碳數1~20之烷基可為直鏈狀、分枝狀、環狀之任一者。烷基的具體例方面,可舉出甲基、乙基、n-丙基、異丙基、n-丁基、異丁基、s-丁基、t-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基等之碳數1~20之直鏈狀或分枝鏈狀烷基;環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬基、環癸基、雙環丁基、雙環戊基、雙環己基、雙環庚基、雙環辛基、雙環壬基、雙環癸基等之碳數3~20之環狀烷基等。 The alkyl group having 1 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic chain. Specific examples of the alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, s-butyl group, t-butyl group, n-pentyl group, and n. a linear or branched chain alkyl group having a carbon number of 1 to 20 such as a hexyl group, an n-heptyl group, an n-octyl group, an n-fluorenyl group or an n-fluorenyl group; a cyclopropyl group, a cyclobutyl group, and a ring; Pentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclodecyl, bicyclobutyl, dicyclopentyl, bicyclohexyl, bicycloheptyl, bicyclooctyl, bicyclononyl, bicycloindenyl, etc. A cyclic alkyl group having 3 to 20 carbon atoms.

碳數2~20之烯基可為直鏈狀、分枝狀、環狀之任一者。烯基的具體例方面,可舉出乙烯基、n-1-丙烯基、n-2-丙烯基、1-甲基乙烯基、n-1-丁烯基、n-2-丁烯基、n-3-丁烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、n-1-戊烯基、n-1-癸烯基、n-1-廿烯基等。 The alkenyl group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic chain. Specific examples of the alkenyl group include a vinyl group, an n-1-propenyl group, an n-2-propenyl group, a 1-methylvinyl group, an n-1-butenyl group, and an n-2-butenyl group. N-3-butenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-ethylvinyl, 1-methyl-1-propenyl, 1-methyl- 2-propenyl, n-1-pentenyl, n-1-nonenyl, n-1-nonenyl and the like.

碳數2~20之炔基可為直鏈狀、分枝狀、環狀之任一者。炔基的具體例方面,可舉出乙炔基、n-1-丙炔基、n-2-丙炔基、n-1-丁炔基、n-2-丁炔基、n-3-丁炔基、1-甲基-2-丙炔基、n-1-戊炔基、n-2-戊炔基、n-3-戊炔基、n-4-戊炔基、1-甲基-n-丁炔基、2-甲基-n-丁炔基、3- 甲基-n-丁炔基、1,1-二甲基-n-丙炔基、n-1-己炔基、n-1-癸炔基、n-1-十五炔基、n-1-廿炔基等。 The alkynyl group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic chain. Specific examples of the alkynyl group include an ethynyl group, an n-1-propynyl group, a n-2-propynyl group, an n-1-butynyl group, an n-2-butynyl group, and an n-3-butyl group. Alkynyl, 1-methyl-2-propynyl, n-1-pentynyl, n-2-pentynyl, n-3-pentynyl, n-4-pentynyl, 1-methyl -n-butynyl, 2-methyl-n-butynyl, 3- Methyl-n-butynyl, 1,1-dimethyl-n-propynyl, n-1-hexynyl, n-1-decynyl, n-1-pentynyl, n- 1-decynyl and the like.

碳數1~20之烷氧基可為直鏈狀、分枝狀、環狀之任一者。烷氧基的具體例方面,可舉出甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、異丁氧基、s-丁氧基、t-丁氧基、n-戊基氧基、n-己基氧基、n-庚基氧基、n-辛基氧基、n-壬基氧基、n-癸基氧基等之碳數1~20之直鏈狀或分枝鏈狀烷氧基;環丙基氧基、環丁基氧基、環戊基氧基、環己基氧基、環庚基氧基、環辛基氧基、環壬基氧基、環癸基氧基、雙環丁基氧基、雙環戊基氧基、雙環己基氧基、雙環庚基氧基、雙環辛基氧基、雙環壬基氧基、雙環癸基氧基等之碳數3~20之環狀烷氧基等。 The alkoxy group having 1 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic chain. Specific examples of the alkoxy group include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, an s-butoxy group, and a t-butyl group. Carbon number 1 to 20 of an oxy group, an n-pentyloxy group, an n-hexyloxy group, an n-heptyloxy group, an n-octyloxy group, an n-fluorenyloxy group, an n-fluorenyloxy group or the like a linear or branched chain alkoxy group; a cyclopropyloxy group, a cyclobutyloxy group, a cyclopentyloxy group, a cyclohexyloxy group, a cycloheptyloxy group, a cyclooctyloxy group, a cyclic oxime Alkoxy, cyclodecyloxy, bicyclobutyloxy, biscyclopentyloxy, dicyclohexyloxy, bicycloheptyloxy, bicyclooctyloxy, bicyclononyloxy, bicyclononyloxy A cyclic alkoxy group having a carbon number of 3 to 20, and the like.

碳數2~20之烯基氧基可為直鏈狀、分枝狀、環狀之任一者。烯基氧基的具體例方面,可舉出乙烯基氧基、n-1-丙烯基氧基、n-2-丙烯基氧基、1-甲基乙烯基氧基、n-1-丁烯基氧基、n-2-丁烯基氧基、n-3-丁烯基氧基、2-甲基-1-丙烯基氧基、2-甲基-2-丙烯基氧基、1-乙基乙烯基氧基、1-甲基-1-丙烯基氧基、1-甲基-2-丙烯基氧基、n-1-戊烯基氧基、n-1-癸烯基氧基、n-1-廿烯基氧基等。 The alkenyloxy group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic chain. Specific examples of the alkenyloxy group include a vinyloxy group, an n-1-propenyloxy group, an n-2-propenyloxy group, a 1-methylvinyloxy group, and a n-1-butene group. Alkoxy, n-2-butenyloxy, n-3-butenyloxy, 2-methyl-1-propenyloxy, 2-methyl-2-propenyloxy, 1- Ethylvinyloxy, 1-methyl-1-propenyloxy, 1-methyl-2-propenyloxy, n-1-pentenyloxy, n-1-nonenyloxy , n-1-nonenyloxy and the like.

碳數2~20之炔基氧基可為直鏈狀、分枝狀、環狀之任一者。炔基氧基的具體例方面,可舉出乙炔基氧基、n-1-丙炔基氧基、n-2-丙炔基氧基、n-1-丁炔基氧基、n-2-丁炔基氧基、n-3-丁炔基氧基、1-甲基-2-丙炔基 氧基、n-1-戊炔基氧基、n-2-戊炔基氧基、n-3-戊炔基氧基、n-4-戊炔基氧基、1-甲基-n-丁炔基氧基、2-甲基-n-丁炔基氧基、3-甲基-n-丁炔基氧基、1,1-二甲基-n-丙炔基氧基、n-1-己炔基氧基、n-1-癸炔基氧基、n-1-十五炔基氧基、n-1-廿炔基氧基等。 The alkynyloxy group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic group. Specific examples of the alkynyloxy group include an ethynyloxy group, an n-1-propynyloxy group, a n-2-propynyloxy group, an n-1-butynyloxy group, and an n-2 group. -butynyloxy, n-3-butynyloxy, 1-methyl-2-propynyl Oxyl, n-1-pentynyloxy, n-2-pentynyloxy, n-3-pentynyloxy, n-4-pentynyloxy, 1-methyl-n- Butynyloxy, 2-methyl-n-butynyloxy, 3-methyl-n-butynyloxy, 1,1-dimethyl-n-propynyloxy, n- 1-hexynyloxy, n-1-decynyloxy, n-1-pentadecenyloxy, n-1-nonynyloxy and the like.

碳數1~20之烷基硫代基可為直鏈狀、分枝狀、環狀之任一者。烷基硫代基的具體例方面,可舉出甲基硫代基、乙基硫代基、n-丙基硫代基、異丙基硫代基、n-丁基硫代基、異丁基硫代基、s-丁基硫代基、t-丁基硫代基、n-戊基硫代基、n-己基硫代基、n-庚基硫代基、n-辛基硫代基、n-壬基硫代基、n-癸基硫代基等之碳數1~20之直鏈狀或分枝鏈狀烷基硫代基;環丙基硫代基、環丁基硫代基、環戊基硫代基、環己基硫代基、環庚基硫代基、環辛基硫代基、環壬基硫代基、環癸基硫代基、雙環丁基硫代基、雙環戊基硫代基、雙環己基硫代基、雙環庚基硫代基、雙環辛基硫代基、雙環壬基硫代基、雙環癸基硫代基等之碳數3~20之環狀烷基硫代基等。 The alkylthio group having 1 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic group. Specific examples of the alkylthio group include a methylthio group, an ethylthio group, an n-propylthio group, an isopropylthio group, an n-butylthio group, and an isobutyl group. Thiothio group, s-butylthio group, t-butylthio group, n-pentylthio group, n-hexylthio group, n-heptylthio group, n-octylthio group a linear or branched chain alkylthio group having 1 to 20 carbon atoms such as a group, an n-fluorenylthio group or an n-fluorenylthio group; a cyclopropylthio group and a cyclobutyl sulfide; Substituent, cyclopentylthio, cyclohexylthio, cycloheptylthio, cyclooctylthio, cyclodecylthio, cyclodecylthio, bicyclobutylthio a ring having a carbon number of 3 to 20, such as a bicyclopentylthio group, a bicyclohexylthio group, a bicycloheptylthio group, a bicyclooctylthio group, a bicyclononylthio group, or a bicyclononylthio group. Alkylthio group and the like.

碳數2~20之烯基硫代基可為直鏈狀、分枝狀、環狀之任一者。烯基硫代基的具體例方面,可舉出乙烯基硫代基、n-1-丙烯基硫代基、n-2-丙烯基硫代基、1-甲基乙烯基硫代基、n-1-丁烯基硫代基、n-2-丁烯基硫代基、n-3-丁烯基硫代基、2-甲基-1-丙烯基硫代基、2-甲基-2-丙烯基硫代基、1-乙基乙烯基硫代基、1-甲基-1-丙烯基硫代基、1-甲基-2-丙烯基硫代基、n-1-戊烯基硫代基、n- 1-癸烯基硫代基、n-1-廿烯基硫代基等。 The alkenylthio group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic group. Specific examples of the alkenylthio group include a vinylthio group, an n-1-propenylthio group, an n-2-propenylthio group, a 1-methylvinylthio group, and n. 1-butenylthio, n-2-butenylthio, n-3-butenylthio, 2-methyl-1-propenylthio, 2-methyl- 2-propenylthio, 1-ethylvinylthio, 1-methyl-1-propenylthio, 1-methyl-2-propenylthio, n-1-pentene Thiothio group, n- 1-decenylthio group, n-1-nonenylthio group, and the like.

碳數2~20之炔基硫代基可為直鏈狀、分枝狀、環狀之任一者。炔基硫代基的具體例方面,可舉出乙炔基硫代基、n-1-丙炔基硫代基、n-2-丙炔基硫代基、n-1-丁炔基硫代基、n-2-丁炔基硫代基、n-3-丁炔基硫代基、1-甲基-2-丙炔基硫代基、n-1-戊炔基硫代基、n-2-戊炔基硫代基、n-3-戊炔基硫代基、n-4-戊炔基硫代基、1-甲基-n-丁炔基硫代基、2-甲基-n-丁炔基硫代基、3-甲基-n-丁炔基硫代基、1,1-二甲基-n-丙炔基硫代基、n-1-己炔基硫代基、n-1-癸炔基硫代基、n-1-十五炔基硫代基、n-1-廿炔基硫代基等。 The alkynylthio group having 2 to 20 carbon atoms may be any of a linear chain, a branched chain, and a cyclic group. Specific examples of the alkynylthio group include an ethynylthio group, an n-1-propynylthio group, a n-2-propynylthio group, and an n-1-butynyl group. Base, n-2-butynylthio group, n-3-butynylthio group, 1-methyl-2-propynylthio group, n-1-pentynylthio group, n 2-pentynylthio, n-3-pentynylthio, n-4-pentynylthio, 1-methyl-n-butynylthio, 2-methyl -n-butynylthio, 3-methyl-n-butynylthio, 1,1-dimethyl-n-propynylthio, n-1-hexynylthio A group, an n-1-decynylthio group, an n-1-pentadecenylthio group, an n-1-decynylthio group, and the like.

烷基、烯基、炔基、烷氧基、烯基氧基、炔基氧基、烷基硫代基、烯基硫代基及炔基硫代基之碳數,係以12以下為佳,6以下更佳,4以下又再更佳。 The carbon number of the alkyl group, the alkenyl group, the alkynyl group, the alkoxy group, the alkenyloxy group, the alkynyloxy group, the alkylthio group, the alkenylthio group and the alkynylthio group is preferably 12 or less. More than 6 is better, and 4 is better.

碳數6~20之芳基的具體例方面,可舉出苯基、1-萘基、2-萘基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基、9-菲基等。 Specific examples of the aryl group having 6 to 20 carbon atoms include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-fluorenyl group, a 2-fluorenyl group, a 9-fluorenyl group, a 1-phenanthryl group, and 2 - phenanthryl, 3-phenanthryl, 4-phenanthryl, 9-phenanthryl and the like.

碳數6~20之芳基氧基的具體例方面,可舉出苯基氧基、1-萘基氧基、2-萘基氧基、1-蒽基氧基、2-蒽基氧基、9-蒽基氧基、1-菲基氧基、2-菲基氧基、3-菲基氧基、4-菲基氧基、9-菲基氧基等。 Specific examples of the aryloxy group having 6 to 20 carbon atoms include a phenyloxy group, a 1-naphthyloxy group, a 2-naphthyloxy group, a 1-decyloxy group, and a 2-decyloxy group. , 9-fluorenyloxy, 1-phenanthryloxy, 2-phenanthryloxy, 3-phenanthryloxy, 4-phenanthryloxy, 9-phenanthryloxy and the like.

碳數2~20之雜芳基氧基的具體例方面,可舉出2-噻吩基氧基、3-噻吩基氧基、2-喃基氧基、3-喃基氧基、2-噁唑基氧基、4-噁唑基氧基、5-噁唑基氧基、3-異 噁唑基氧基、4-異噁唑基氧基、5-異噁唑基氧基、2-噻唑基氧基、4-噻唑基氧基、5-噻唑基氧基、3-異噻唑基氧基、4-異噻唑基氧基、5-異噻唑基氧基、2-咪唑基氧基、4-咪唑基氧基、2-吡啶基氧基、3-吡啶基氧基、4-吡啶基氧基等。 Specific examples of the heteroaryloxy group having 2 to 20 carbon atoms include a 2-thienyloxy group, a 3-thienyloxy group, a 2-bromooxy group, a 3-anyloxy group, and a 2-oxo group. Azyloxy, 4-oxazolyloxy, 5-oxazolyloxy, 3-iso Oxazolyloxy, 4-isoxazolyloxy, 5-isoxazolyloxy, 2-thiazolyloxy, 4-thiazolyloxy, 5-thiazolyloxy, 3-isothiazolyl Oxy, 4-isothiazolyloxy, 5-isothiazolyloxy, 2-imidazolyloxy, 4-imidazolyloxy, 2-pyridyloxy, 3-pyridyloxy, 4-pyridine Baseoxy and the like.

碳數6~20之芳基硫代基的具體例方面,可舉出苯基硫代基、1-萘基硫代基、2-萘基硫代基、1-蒽基硫代基、2-蒽基硫代基、9-蒽基硫代基、1-菲基硫代基、2-菲基硫代基、3-菲基硫代基、4-菲基硫代基、9-菲基硫代基等。 Specific examples of the arylthio group having 6 to 20 carbon atoms include a phenylthio group, a 1-naphthylthio group, a 2-naphthylthio group, a 1-decylthio group, and 2 - mercaptothio group, 9-fluorenylthio group, 1-phenanthrylthio group, 2-phenanthrylthio group, 3-phenanthrylthio group, 4-phenanthrylthio group, 9-phenanthrene group Thiothio group and the like.

碳數2~20之雜芳基硫代基的具體例方面,可舉出2-噻吩基硫代基、3-噻吩基硫代基、2-喃基硫代基、3-喃基硫代基、2-噁唑基硫代基、4-噁唑基硫代基、5-噁唑基硫代基、3-異噁唑基硫代基、4-異噁唑基硫代基、5-異噁唑基硫代基、2-噻唑基硫代基、4-噻唑基硫代基、5-噻唑基硫代基、3-異噻唑基硫代基、4-異噻唑基硫代基、5-異噻唑基硫代基、2-咪唑基硫代基、4-咪唑基硫代基、2-吡啶基硫代基、3-吡啶基硫代基、4-吡啶基硫代基等。 Specific examples of the heteroarylthio group having 2 to 20 carbon atoms include a 2-thienylthio group, a 3-thienylthio group, a 2-anthylthio group, and a 3-anthylthio group. Base, 2-oxazolylthio group, 4-oxazolylthio group, 5-oxazolylthio group, 3-isoxazolylthio group, 4-isoxazolylthio group, 5 - Isoxazolylthio group, 2-thiazolylthio group, 4-thiazolylthio group, 5-thiazolylthio group, 3-isothiazolylthio group, 4-isothiazolylthio group , 5-isothiazolylthio group, 2-imidazolylthio group, 4-imidazolylthio group, 2-pyridylthio group, 3-pyridylthio group, 4-pyridylthio group, etc. .

芳基、芳基氧基、雜芳基氧基、芳基硫代基及雜芳基硫代基之碳數係,14以下為佳,10以下更佳,6以下又再更佳。 The carbon number of the aryl group, the aryloxy group, the heteroaryloxy group, the arylthio group and the heteroarylthio group is preferably 14 or less, more preferably 10 or less, and still more preferably 6 or less.

R1~R4方面,可舉出可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代 之碳數1~20,特別是碳數2~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基為佳,可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z2所取代之碳數6~20之芳基氧基或可以Z2所取代之碳數2~20之雜芳基氧基更佳,可以Z1所取代之碳數1~20之烷氧基或可以Z2所取代之碳數6~20之芳基氧基又更佳。 Aspect R 1 ~ R 4, Z may be substituted include the carbon number of an alkoxy group of 1 to 20, Z may be substituted with the alkenyl group having a carbon number of 2 to 20, Z may be substituted with 1 carbon of Alkoxyoxy group of 2 to 20, a carbon number of 1 to 20 which may be substituted by Z 1 , particularly an alkylthio group having 2 to 20 carbon atoms, and an alkenyl group having 2 to 20 carbon atoms which may be substituted by Z 1 thio group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2-ylthio group, Z may be substituted with the group having 2 carbon atoms, an aryl group of 6 to 20 may be substituted with Z 2 of 2 to 20 carbon atoms the heteroaryl group may be substituted with Z 2 carbon atoms of the arylthio group of 6 to 20, or Z may be substituted with a heteroaryl group of 2 carbon atoms of the thio group preferably having 2 to 20, Z 1 may be the the substituted alkoxy group having a carbon number of 1 to 20, Z may be substituted with the 1 to 20 carbon atoms, alkenyl of 2-yl group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2 group, Z 2 may be the a substituted aryloxy group having 6 to 20 carbon atoms or a heteroaryloxy group having 2 to 20 carbon atoms which may be substituted by Z 2 , and an alkoxy group having 1 to 20 carbon atoms which may be substituted by Z 1 or may be used. The aryloxy group having 6 to 20 carbon atoms substituted by Z 2 is more preferable.

又,R5~R8方面,係以氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基或可以Z1所取代之碳數1~20之烷氧基為佳,又以氫原子、可以Z1所取代之碳數1~20之烷基或可以Z1所取代之碳數1~20之烷氧基更佳,氫原子或可以Z1所取代之碳數1~20之烷氧基又再更佳,氫原子為最佳。 And, R 5 ~ R 8 terms, based hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 alkenyl having 2 to 20, the sum may be substituted with Z 1 carbon atoms or alkynyl groups may be substituted with Z 1 of 1 to 20 carbon atoms, an alkoxy group of preferably from 2 to 20, the preferred is a hydrogen atom, Z can be substituted with alkyl of 1 to 20 carbon atoms or can be of Z 1 The substituted alkoxy group having 1 to 20 carbon atoms is more preferable, and the hydrogen atom or the alkoxy group having 1 to 20 carbon atoms which may be substituted by Z 1 is more preferable, and the hydrogen atom is most preferable.

R9~R12方面,係以氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基或可以Z1所取代之碳數2~20之炔基為佳,以氫原子或可以Z1所取代之碳數1~20之烷基更佳,氫原子為最佳。 R 9 to R 12 are a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , an alkenyl group having 2 to 20 carbon atoms which may be substituted by Z 1 or a carbon number which may be substituted by Z 1 The alkynyl group of 2 to 20 is preferred, and a hydrogen atom or an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 is more preferable, and a hydrogen atom is most preferable.

此外,R1~R12中,取代基之Z1方面,係以鹵素原子或碳數6~14之芳基為佳,鹵素原子或苯基更佳, 以不存在者(即非取代者)為最佳。 Further, in the case of R 1 to R 12 , the Z 1 side of the substituent is preferably a halogen atom or an aryl group having 6 to 14 carbon atoms, and a halogen atom or a phenyl group is more preferable, and a non-existent (ie, non-substituted) For the best.

又,取代基之Z2方面,係以鹵素原子或碳數1~20之烷基為佳,鹵素原子或碳數1~4之烷基更佳,以不存在者(即非取代者)為最佳。 Further, in the Z 2 side of the substituent, a halogen atom or an alkyl group having 1 to 20 carbon atoms is preferred, and a halogen atom or an alkyl group having 1 to 4 carbon atoms is more preferable, and the non-existent (ie, non-substituted) is optimal.

式(1)所示之噻吩衍生物,從合成之容易性的觀點來看,係以在3位具取代基之2-噻吩基全都有相同的構造者為佳。即,式(1)中R1~R4皆為相同的基,R5~R8皆為相同的基,且R9~R12皆為相同的基者為佳。 The thiophene derivative represented by the formula (1) is preferably one having the same structure as the 2-thienyl group having a substituent at the 3-position from the viewpoint of easiness of synthesis. That is, in the formula (1), R 1 to R 4 are all the same groups, and R 5 to R 8 are all the same groups, and it is preferred that R 9 to R 12 are the same groups.

以下,列舉出式(1)所示之噻吩衍生物之具體例,但不受限於此等。此外,式中,Me、Et、Pr、Bu、Pen及Hex各自表示甲基、乙基、丙基、丁基、戊基及己基。 Specific examples of the thiophene derivative represented by the formula (1) are listed below, but are not limited thereto. Further, in the formula, Me, Et, Pr, Bu, Pen, and Hex each represent a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, and a hexyl group.

〔噻吩衍生物之製造方法〕 [Method for producing thiophene derivative]

本發明之噻吩衍生物係,例如,可以使式(2)所示之噻吩化合物與式(3)~(6)所示之三烷基錫烷基噻吩化合物在觸媒存在下反應來製造。 The thiophene derivative of the present invention can be produced, for example, by reacting a thiophene compound represented by the formula (2) with a trialkylstannylthiophene compound represented by the formula (3) to (6) in the presence of a catalyst.

(式中,Hal各自獨立地表示鹵素原子或擬鹵素基、Ra各自獨立地表示碳數1~20之烷基。R1~R12係與上述相同) (wherein Hal independently represents a halogen atom or a pseudohalogen group, and R a each independently represents an alkyl group having 1 to 20 carbon atoms. R 1 to R 12 are the same as described above)

鹵素原子方面,可舉出與上述相同者。 The halogen atom is the same as the above.

擬鹵素基方面,可舉出甲烷磺醯基氧基、三氟甲烷磺醯基氧基、九氟丁烷磺醯基氧基等之(氟)烷基磺醯基氧基;苯磺醯基氧基、甲苯磺醯基氧基等之芳香族磺醯基氧基等。 Examples of the pseudohalo group include a (fluoro)alkylsulfonyloxy group such as a methanesulfonyloxy group, a trifluoromethanesulfonyloxy group, or a nonafluorobutanesulfonyloxy group; and a benzenesulfonyl group; An aromatic sulfonyloxy group such as an oxy group or a tolsulfonyloxy group.

三烷基錫烷基方面,可舉出三甲基錫烷基、三乙基錫烷基、三-n-丙基錫烷基、三異丙基錫烷基、三-n-丁基錫烷基、三-n-戊基錫烷基、三環己基錫烷基、三辛基錫烷基、n-丁基二甲基錫烷基等。 The trialkylstannyl group may, for example, be a trimethylstannyl group, a triethylstannyl group, a tri-n-propylstannyl group, a triisopropylstannyl group or a tri-n-butylstannyl group. , tri-n-pentylstannyl, tricyclohexylstannyl, trioctylstannyl, n-butyldimethylstannyl, and the like.

式(2)所示之噻吩化合物的具體例方面,可舉出四氯噻吩、四溴噻吩、四碘噻吩等,但不受限於此等。 Specific examples of the thiophene compound represented by the formula (2) include, but are not limited to, tetrachlorothiophene, tetrabromothiophene, and tetraiodothiophene.

式(3)~(6)所示之三烷基錫烷基噻吩化合 物方面,可舉出3-甲氧基-2-(三-n-丁基錫烷基)噻吩、3-甲基硫代基-2-(三-n-丁基錫烷基)噻吩、3-己基-(三-n-丁基錫烷基)噻吩、3,4-伸乙基二氧-2-(三-n-丁基錫烷基)噻吩等,但不受限於此等。 a trialkylstannylthiophene compound represented by formulas (3) to (6) The substance may, for example, be 3-methoxy-2-(tri-n-butylstannyl)thiophene, 3-methylthio-2-(tri-n-butylstannyl)thiophene or 3-hexyl- (Tri-n-butylstannyl)thiophene, 3,4-extended ethyldioxy-2-(tri-n-butylstannyl)thiophene, etc., but are not limited thereto.

所置入的式(2)所示之噻吩化合物與式(3)~(5)所示之三烷基錫烷基噻吩化合物的比,相對於式(2)所示之噻吩化合物,係可使式(3)~(5)所示之噻吩化合物各自為1當量以上,又以1~1.2當量左右為佳。 The ratio of the thiophene compound represented by the formula (2) to the trialkylstannylthiophene compound represented by the formula (3) to (5), and the thiophene compound represented by the formula (2), Each of the thiophene compounds represented by the formulae (3) to (5) is preferably 1 equivalent or more, and more preferably about 1 to 1.2 equivalents.

上述反應中所用的觸媒方面,可舉例如氯化銅、溴化銅、碘化銅等之銅觸媒;肆(三苯基膦)鈀(Pd(PPh3)4)、雙(三苯基膦)二氯鈀(Pd(PPh3)2Cl2)、雙(亞苄基丙酮)鈀(Pd(dba)2)、參(亞苄基丙酮)二鈀(Pd2(dba)3)、雙(三-t-丁基膦)鈀(Pd(P-t-Bu3)2)等之鈀觸媒等。此等之觸媒可單獨使用1種或組合2種以上來使用。又,此等之觸媒亦可與公知而適當的配位子一起使用。 The catalyst used in the above reaction may, for example, be a copper catalyst such as copper chloride, copper bromide or copper iodide; bismuth (triphenylphosphine) palladium (Pd(PPh 3 ) 4 ) or bis(triphenylbenzene); Palladium (Pd(PPh 3 ) 2 Cl 2 ), bis(benzylideneacetone)palladium (Pd(dba) 2 ), ginseng (benzylideneacetone) dipalladium (Pd 2 (dba) 3 ) A palladium catalyst such as bis(tri-t-butylphosphine)palladium (Pd(But-Bu 3 ) 2 ). These catalysts may be used alone or in combination of two or more. Moreover, these catalysts can also be used with well-known and appropriate ligands.

觸媒的使用量,相對於式(2)所示之噻吩化合物1mol,可為0.01~0.2mol左右,以0.05mol左右為佳。 The amount of the catalyst used may be about 0.01 to 0.2 mol, preferably about 0.05 mol, based on 1 mol of the thiophene compound represented by the formula (2).

又,使用配位子時,其使用量,相對於所用的金屬錯合物,可為0.1~5當量,1~2當量較佳。 Further, when a ligand is used, the amount thereof to be used may be 0.1 to 5 equivalents, preferably 1 to 2 equivalents, per equivalent of the metal complex used.

上述反應可於溶劑中進行。使用溶劑時,其種類若對反應沒有不良影響的話,並無特別限制。具體例 方面,可舉出脂肪族烴類(戊烷、n-己烷、n-辛烷、n-癸烷、十氫萘等)、鹵素化脂肪族烴類(氯仿、二氯甲烷、二氯乙烷、四氯化碳等)、芳香族烴類(苯、硝基苯、甲苯、o-二甲苯、m-二甲苯、p-二甲苯、均三甲苯等)、鹵素化芳香族烴類(氯苯、溴苯、o-二氯苯、m-二氯苯、p-二氯苯等)、醚類(二乙基醚、二異丙基醚、t-丁基甲基醚、四氫呋喃、二氧陸圜、1,2-二甲氧基乙烷、1,2-二乙氧基乙烷等)、酮類(丙酮、甲基乙基酮、甲基異丁基酮、二-n-丁基酮、環己酮等)、醯胺類(N,N-二甲基甲醯胺、N,N-二甲基乙醯胺等)、內醯胺及內酯類(N-甲基吡咯啶酮、γ-丁內酯等)、尿素類(N,N-二甲基四氫咪唑酮、四甲基脲等)、亞碸類(二甲基亞碸、環丁碸等)、腈類(乙腈、丙腈、丁腈等)等。此等之溶劑可單獨使用1種或混合2種以上使用。 The above reaction can be carried out in a solvent. When a solvent is used, the kind thereof is not particularly limited as long as it does not adversely affect the reaction. Specific example Examples thereof include aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decahydronaphthalene, etc.), halogenated aliphatic hydrocarbons (chloroform, dichloromethane, and dichloroethane). Alkane, carbon tetrachloride, etc.), aromatic hydrocarbons (benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mesitylene, etc.), halogenated aromatic hydrocarbons ( Chlorobenzene, bromobenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, etc., ethers (diethyl ether, diisopropyl ether, t-butyl methyl ether, tetrahydrofuran, dioxane Ruthenium, 1,2-dimethoxyethane, 1,2-diethoxyethane, etc., ketones (acetone, methyl ethyl ketone, methyl isobutyl ketone, di-n-butyl) Ketone, cyclohexanone, etc.), guanamines (N,N-dimethylformamide, N,N-dimethylacetamide, etc.), indoleamines and lactones (N-methylpyrrole Pyridone, γ-butyrolactone, etc., urea (N,N-dimethyltetrahydroimidazolidone, tetramethylurea, etc.), fluorene (dimethyl sulfonium, cyclobutyl hydrazine, etc.), nitrile Classes (acetonitrile, propionitrile, butyronitrile, etc.) and the like. These solvents may be used alone or in combination of two or more.

反應溫度可於所用溶劑之融點~沸點為止之範圍下適當地設定即可,特別是以0~200℃左右為佳、20~150℃更佳。 The reaction temperature may be appropriately set within the range from the melting point to the boiling point of the solvent to be used, and particularly preferably from 0 to 200 ° C, more preferably from 20 to 150 ° C.

反應結束後,可遵照常法進行後處理,得到目的之噻吩衍生物。 After completion of the reaction, post-treatment can be carried out in accordance with a usual method to obtain a desired thiophene derivative.

本發明之噻吩衍生物之合成中所用的式(3)~(6)所示之三烷基錫烷基噻吩化合物之製造方法雖未特別限定,但例如,可依下述反應式來予以合成(Scheme 1)。此外,下述反應式中,雖顯示出式(3)所示之三烷基錫烷基噻吩化合物之合成方法,式(4)~(6)所示之 三烷基錫烷基噻吩化合物亦仿效下述反應式,使對應的噻吩化合物鋰化(Lithiation),使其與鹵素化三烷基錫反應,得以同樣地合成。 The method for producing the trialkylstannylthiophene compound represented by the formulae (3) to (6) used in the synthesis of the thiophene derivative of the present invention is not particularly limited, but, for example, it can be synthesized according to the following reaction formula. (Scheme 1). Further, in the following reaction formula, a method for synthesizing a trialkylstannylthiophene compound represented by the formula (3) and a formula (4) to (6) are shown. The trialkylstannylthiophene compound is also synthesized in the same manner as in the following reaction formula, and the corresponding thiophene compound is lithiated to react with the halogenated trialkyltin.

(式中,R1、R5、R9及Ra係與上述相同。X表示鹵素原子) (wherein R 1 , R 5 , R 9 and R a are the same as defined above. X represents a halogen atom)

特別是,此合成方法係因可將2及5位無取代,而於3位具有配位性取代基,且4位為無取代或以非配位性取代基所取代的噻吩化合物(式(7”))之2位高選擇性地鋰化,特別適用於式(7)所示之噻吩化合物之合成(Scheme 2)。 In particular, the synthesis method is a thiophene compound which has an unsubstituted substituent at the 2 and 5 positions and a coordinating substituent at the 3 position, and the 4 position is unsubstituted or substituted with a non-coordinating substituent. The 2 position of 7")) is highly selectively lithiated, and is particularly suitable for the synthesis of the thiophene compound represented by the formula (7) (Scheme 2).

(式中,Ra、R及X係與上述相同。R13表示配位性取代基、R14表示氫原子或非配位性取代基) (wherein R a , R and X are the same as defined above. R 13 represents a coordinating substituent, and R 14 represents a hydrogen atom or a non-coordinating substituent)

所謂配位性取代基,係指氧、氮、硫原子等 具有可對鋰原子配位之原子的取代基,所謂非配位性取代基,意指不含該等原子之取代基。 The term "coordinating substituent" means oxygen, nitrogen, sulfur atom, etc. A substituent having an atom capable of coordinating a lithium atom, a so-called non-coordinating substituent, means a substituent which does not contain such an atom.

配位性取代基方面,可舉出可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基。 Coordinating the substituents, Z may be substituted include the carbon number of an alkoxy group of 1 to 20, Z may be substituted with the 1 to 20 carbon atoms, alkenyl of 2-yl group, Z may be substituted with 1 carbon of An alkynyloxy group of 2 to 20, an aryloxy group having 6 to 20 carbon atoms which may be substituted by Z 2 , a heteroaryloxy group having 2 to 20 carbon atoms which may be substituted by Z 2 , may be substituted by Z 1 An alkylthio group having 1 to 20 carbon atoms, an alkenylthio group having 2 to 20 carbon atoms which may be substituted by Z 1 , an alkynylthio group having 2 to 20 carbon atoms which may be substituted by Z 1 , Z 2 carbon atoms of the substituted arylthio group of 6 to 20, or Z may be substituted with a carbon number of 2 hetero arylthio group of 2 to 20.

非配位性取代基方面,可舉出可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基或可以Z1所取代之碳數2~20之炔基。 Non-coordinating substituent aspect, Z can include a substituted alkyl group of a carbon number of 1 to 20 may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, or Z may be substituted with a carbon number of 2 ~20 alkynyl.

此等烷氧基、烯基氧基、炔基氧基、芳基氧基、雜芳基氧基、烷基硫代基、烯基硫代基、炔基硫代基、芳基硫代基、雜芳基硫代基、烷基、烯基及炔基以及此等之取代基之Z1及可以Z2方面,可舉出與上述相同者。 Such alkoxy, alkenyloxy, alkynyloxy, aryloxy, heteroaryloxy, alkylthio, alkenylthio, alkynylthio, arylthio Examples of the Z 1 and Z 2 groups of the heteroarylthio group, the alkyl group, the alkenyl group and the alkynyl group and the substituents thereof may be the same as those described above.

式(3”)所示之噻吩化合物方面,可舉出3-甲基噻吩、3-乙基噻吩、3-n-丙基噻吩、3-n-丁基噻吩、3-n-戊基噻吩、3-n-己基噻吩、3-甲氧基噻吩、3-乙氧基噻吩、3-n-丙氧基噻吩、3,4-二甲氧基噻吩、3,4-二乙氧基噻吩、3,4-伸乙基二氧噻吩、3-甲基硫代基噻吩等,但不 受限於此等。 Examples of the thiophene compound represented by the formula (3") include 3-methylthiophene, 3-ethylthiophene, 3-n-propylthiophene, 3-n-butylthiophene, and 3-n-pentylthiophene. , 3-n-hexylthiophene, 3-methoxythiophene, 3-ethoxythiophene, 3-n-propoxythiophene, 3,4-dimethoxythiophene, 3,4-diethoxythiophene , 3,4-extended ethyldioxythiophene, 3-methylthiothiophene, etc., but not Limited by this.

式(7”)所示之噻吩化合物方面,可舉出3-甲氧基噻吩、3-乙氧基噻吩、3-n-丙氧基噻吩、3-甲基硫代基噻吩等,但不受限於此等。 Examples of the thiophene compound represented by the formula (7") include 3-methoxythiophene, 3-ethoxythiophene, 3-n-propoxythiophene, 3-methylthiothiophene, etc., but not Limited by this.

鋰化劑方面,可舉出有機鋰化合物,列舉例如n-丁基鋰、s-丁基鋰、t-丁基鋰、異丁基鋰、甲基鋰、n-丙基鋰、異丙基鋰、乙基鋰、n-己基鋰、三甲基矽烷基甲基鋰、丙炔基鋰、2-乙基己基鋰、2,4-戊二烯基鋰、烯丙基鋰、1,3-丁二烯基-2-鋰、t-丁氧基甲基鋰、1-甲氧基烯丙基鋰、三氯甲基鋰、戊基鋰、苯基鋰、2,6-二甲氧基苯基鋰等之烷基鋰或芳基鋰化合物、鋰六甲基二矽胺、鋰二異丙基醯胺、鋰哌啶、鋰二乙基醯胺、鋰四甲基哌啶、鋰雙(二甲基乙基矽烷基)醯胺、鋰二甲基醯胺、鋰二環己基醯胺等之鋰醯胺化合物,但不受限於此等。 Examples of the lithiating agent include organolithium compounds, and examples thereof include n-butyllithium, s-butyllithium, t-butyllithium, isobutyllithium, methyllithium, n-propyllithium, and isopropyl. Lithium, ethyllithium, n-hexyllithium, trimethyldecylmethyllithium, propynyllithium, 2-ethylhexyllithium, 2,4-pentadienyllithium, allyllithium, 1,3 -butadienyl-2-lithium, t-butoxymethyllithium, 1-methoxyallyllithium, trichloromethyllithium, pentyllithium, phenyllithium, 2,6-dimethoxy Alkyl lithium or aryl lithium compound such as phenyl lithium, lithium hexamethyldiamine, lithium diisopropyl decylamine, lithium piperidine, lithium diethyl decylamine, lithium tetramethylpiperidine, lithium Lithium amide compound such as bis(dimethylethyl decyl) decylamine, lithium dimethyl decylamine or lithium dicyclohexyl decylamine, but is not limited thereto.

鹵素化三烷基錫方面,若為可導入三烷基錫烷基者即可,並無特別限定,但若考慮取得容易性、操作性及反應性之平衡,則以三(n-丁基)錫氯化物較佳。此外,鹵素化三烷基錫,可以公知的方法(例如,Chem.Commun.,2001,1840-1841中記載的方法)來合成,亦可以市售品取得。 The halogenated trialkyltin is not particularly limited as long as it can introduce a trialkylstannyl group. However, considering the balance between ease of handling, workability, and reactivity, tris(n-butyl) is used. Tin chloride is preferred. Further, the halogenated trialkyltin can be synthesized by a known method (for example, the method described in Chem. Commun., 2001, 1840-1841), or can be obtained from a commercially available product.

式(3”)所示之噻吩化合物或式(7”)所示之噻吩化合物與鋰化劑的置入比,相對於式(3”)所示之噻吩化合物或式(7”)所示之噻吩化合物,雖可使鋰化劑為1~1.5當量左右,但以1.1當量左右為佳。 The ratio of the thiophene compound represented by the formula (3") or the thiophene compound represented by the formula (7") to the lithiating agent is shown by the thiophene compound represented by the formula (3") or the formula (7"). The thiophene compound may have a lithiating agent of about 1 to 1.5 equivalents, preferably about 1.1 equivalents.

又,式(3’)所示之噻吩化合物或式(7’)所示之噻吩化合物與鹵素化三烷基錫的置入比,相對於式(3’)所示之噻吩化合物或式(7’)所示之噻吩化合物,雖可使鹵素化三烷基錫為1~5當量左右,但以1.2當量左右為佳。 Further, the ratio of the thiophene compound represented by the formula (3') or the thiophene compound represented by the formula (7') to the halogenated trialkyltin is relative to the thiophene compound or formula represented by the formula (3') The thiophene compound shown in 7') may have a halogenated trialkyltin of about 1 to 5 equivalents, preferably about 1.2 equivalents.

反應溫度可於所用溶劑之融點~沸點為止之範圍下適當地設定即可,特別是以-78~20℃左右為佳、-20~0℃更佳。 The reaction temperature may be appropriately set within the range from the melting point to the boiling point of the solvent to be used, and particularly preferably about -78 to 20 ° C, more preferably -20 to 0 ° C.

反應結束後係依常法進行後處理,可得目的之噻吩衍生物。 After the completion of the reaction, the post-treatment is carried out according to a usual method to obtain a desired thiophene derivative.

反應溶劑在不阻礙反應的限制之下,並無特別限定,以鏈狀或環狀醚為佳。特別是,Scheme 2中,從使2位的鋰化選擇性提昇而使式(7)所示噻吩化合物之產率提昇的觀點來看,係以鏈狀醚更佳,又以具有至少1個分枝鏈之鏈狀醚再更佳。 The reaction solvent is not particularly limited as long as it does not inhibit the reaction, and a chain or a cyclic ether is preferred. In particular, in Scheme 2, from the viewpoint of increasing the selectivity of lithiation at the 2-position and increasing the yield of the thiophene compound represented by the formula (7), it is preferable to have a chain ether and at least one The chain ether of the branched chain is even better.

鏈狀醚方面,可舉出二乙基醚、二異丙基醚、二-n-丁基醚、t-丁基甲基醚、環戊基甲基醚等具有直鏈狀或分枝狀之鏈狀烷基或具有環狀烷基之對稱或非對稱的二烷基醚,但不受限於此等。環狀醚方面,可舉出四氫呋喃、四氫吡喃、環氧己烷、環氧庚烷等,但不受限於此等。 Examples of the chain ether include a linear or branched chain such as diethyl ether, diisopropyl ether, di-n-butyl ether, t-butyl methyl ether or cyclopentyl methyl ether. An alkyl group or a symmetric or asymmetric dialkyl ether having a cyclic alkyl group, but is not limited thereto. Examples of the cyclic ether include, but are not limited to, tetrahydrofuran, tetrahydropyran, hexylene oxide, and epoxyheptane.

此等之中,特別是從2位的鋰化選擇性之觀點來看,係以二異丙基醚、t-丁基甲基醚、環戊基甲基醚為佳。 Among these, in particular, diisopropyl ether, t-butyl methyl ether, and cyclopentyl methyl ether are preferred from the viewpoint of lithiation selectivity at the 2-position.

〔電荷輸送性塗漆〕 [charge transport paint]

本發明之電荷輸送性塗漆雖為含有由式(1)所示之噻吩衍生物所成之電荷輸送性物質與有機溶劑者,但為了使電荷輸送能等提昇,亦可因應所需而含有摻雜物。 The charge transporting paint of the present invention is a charge transporting substance and an organic solvent which are formed by the thiophene derivative represented by the formula (1). However, in order to improve the charge transporting property and the like, it may be contained as needed. Dopant.

摻雜物方面,若為塗漆中所用可溶解於至少1種溶劑中者即可,並無特別限定,可使用無機系摻雜物、有機系摻雜物之任一者。 The dopant is not particularly limited as long as it can be dissolved in at least one solvent for use in the painting, and any of an inorganic dopant and an organic dopant can be used.

無機系摻雜物方面,可舉出氯化氫、硫酸、硝酸、磷酸等之無機酸;氯化鋁(III)(AlCl3)、四氯化鈦(IV)(TiCl4)、三溴化硼(BBr3)、三氟化硼醚錯合物(BF3‧OEt2)、氯化鐵(III)(FeCl3)、氯化銅(II)(CuCl2)、五氯化銻(V)(SbCl5)、五氟化銻(V)(SbF5)、五氟化砷(V)(AsF5)、五氟化磷(PF5)、參(4-溴苯基)鋁六氯銻酸鹽(TBPAH)等之金屬鹵素化物;Cl2、Br2、I2、ICl、ICl3、IBr、IF4等之鹵素;磷鉬酸、磷鎢酸等之異性聚合酸等。 Examples of the inorganic dopant include inorganic acids such as hydrogen chloride, sulfuric acid, nitric acid, and phosphoric acid; aluminum (III) chloride (AlCl 3 ), titanium tetrachloride (IV) (TiCl 4 ), and boron tribromide ( BBr 3 ), boron trifluoride ether complex (BF 3 ‧OEt 2 ), iron (III) chloride (FeCl 3 ), copper (II) chloride (CuCl 2 ), antimony pentachloride (V) ( SbCl 5 ), antimony pentafluoride (V) (SbF 5 ), arsenic pentafluoride (V) (AsF 5 ), phosphorus pentafluoride (PF 5 ), ginseng (4-bromophenyl) aluminum hexachloroantimonic acid a metal halide such as a salt (TBPAH); a halogen such as Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr, IF 4 or the like; an anisotropic polymeric acid such as phosphomolybdic acid or phosphotungstic acid.

有機系摻雜物方面,可舉出苯磺酸、對甲苯磺酸、p-苯乙烯磺酸、2-萘磺酸、4-羥基苯磺酸、5-磺酸基水揚酸、p-十二烷基苯磺酸、二己基苯磺酸、2,5-二己基苯磺酸、二丁基萘磺酸、6,7-二丁基-2-萘磺酸、十二烷基萘磺酸、3-十二烷基-2-萘磺酸、己基萘磺酸、4-己基-1-萘磺酸、辛基萘磺酸、2-辛基-1-萘磺酸、己基萘磺酸、7-己基-1-萘磺酸、6-己基-2-萘磺酸、二壬基萘磺酸、2,7-二壬基-4-萘磺酸、二壬基萘二磺酸、2,7-二壬基-4,5-萘二 磺酸、國際公開第2005/000832號記載之1,4-苯并二氧陸圜二磺酸化合物、國際公開第2006/025342號記載之芳基磺酸化合物、國際公開第2009/096352號記載之芳基磺酸化合物、聚苯乙烯磺酸等之芳基磺酸化合物;10-樟腦磺酸等之非芳基磺酸化合物;7,7,8,8-四氰基醌二甲烷(TCNQ)、2,3-二氯-5,6-二氰基-1,4-苯醌(DDQ)等之有機氧化劑等。 Examples of the organic dopant include benzenesulfonic acid, p-toluenesulfonic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfonic acid salicylic acid, and p- Dodecylbenzenesulfonic acid, dihexylbenzenesulfonic acid, 2,5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl-2-naphthalenesulfonic acid, dodecylnaphthalene Sulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 4-hexyl-1-naphthalenesulfonic acid, octylnaphthalenesulfonic acid, 2-octyl-1-naphthalenesulfonic acid, hexylnaphthalene Sulfonic acid, 7-hexyl-1-naphthalenesulfonic acid, 6-hexyl-2-naphthalenesulfonic acid, dinonylnaphthalenesulfonic acid, 2,7-dimercapto-4-naphthalenesulfonic acid, dinonylnaphthalene disulfide Acid, 2,7-dimercapto-4,5-naphthalene A sulfonic acid, a 1,4-benzodioxanthene disulfonic acid compound described in International Publication No. 2005/000832, an arylsulfonic acid compound described in International Publication No. 2006/025342, and International Publication No. 2009/096352. An arylsulfonic acid compound, an arylsulfonic acid compound such as polystyrenesulfonic acid; a non-arylsulfonic acid compound such as 10-camphorsulfonic acid; 7,7,8,8-tetracyanoquinodimethane (TCNQ) An organic oxidizing agent such as 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ).

此等無機系及有機系的摻雜物係可單獨使用1種或組合2種以上使用。 These inorganic and organic dopants may be used alone or in combination of two or more.

此等之摻雜物之中更以異性聚合酸較佳。摻雜物方面若使用異性聚合酸,不只是可由以銦錫氧化物(ITO)、銦鋅氧化物(IZO)為代表之透明電極得到高電洞受容能,亦可由以鋁所代表的金屬陽極得到顯示高電洞受容能之電荷輸送性優異的薄膜。 Among these dopants, it is preferred to polymerize the acid in an anisotropic manner. In the case of dopants, if a heterogeneous polymeric acid is used, not only can a high-porosity-capacitance energy be obtained by a transparent electrode represented by indium tin oxide (ITO) or indium zinc oxide (IZO), but also a metal anode represented by aluminum. A film having excellent charge transport properties in which a high hole is subjected to a capacity is obtained.

所謂異性聚合酸,係代表性地為式(A1)所示之Keggin型或式(A2)所示之Dawson型的化學構造所示,具有雜原子位於分子之中心位置的構造,且為釩(V)、鉬(Mo)、鎢(W)等之含氧酸的同素聚合酸與異種元素之含氧酸所縮合而成的聚合酸。如此的異種元素之含氧酸方面,主要可舉出矽(Si)、磷(P)、砷(As)之含氧酸。 The heterogeneous polymeric acid is typically represented by a Keggin type represented by the formula (A1) or a Dawson type chemical structure represented by the formula (A2), and has a structure in which a hetero atom is located at a central position of the molecule, and is vanadium ( V), a polymeric acid obtained by condensing an oxo acid-containing homopolymeric acid such as molybdenum (Mo) or tungsten (W) with an oxo acid of a different element. Examples of the oxo acid of such a different element include oxo (Si), phosphorus (P), and arsenic (As) oxyacids.

異性聚合酸的具體例方面,可舉出磷鉬酸、矽鉬酸、磷鎢酸、矽鎢酸、磷鎢鉬酸等。此等可單獨使用1種或組合2種以上來使用。此外,本發明所用的異性聚合酸可為市售品取得,又,可以公知的方法合成。 Specific examples of the heterogeneous polymeric acid include phosphomolybdic acid, hydrazine molybdate, phosphotungstic acid, tungstic acid, and phosphotungstic acid. These may be used alone or in combination of two or more. Further, the heterogeneous polymeric acid used in the present invention can be obtained from a commercially available product, and can be synthesized by a known method.

特別是,當摻雜物由1種的異性聚合酸所成時,該1種的異性聚合酸係以磷鎢酸或磷鉬酸者為佳,磷鎢酸者更佳。又,當摻雜物由2種類以上之異性聚合酸所成時,該2種類以上之異性聚合酸中,係以至少1種為磷鎢酸或磷鉬酸者佳,磷鎢酸者更佳。 In particular, when the dopant is formed of one type of anisotropic polymeric acid, the one of the anisotropic polymeric acids is preferably phosphotungstic acid or phosphomolybdic acid, and the phosphotungstic acid is more preferred. Further, when the dopant is composed of two or more kinds of anisotropic polymeric acids, at least one of the two or more types of the isotropic polymeric acids is preferably phosphotungstic acid or phosphomolybdic acid, and the phosphotungstic acid is more preferred. .

此外,異性聚合酸係元素分析等之定量分析中,從一般式所示之構造不管是元素數目多的或少的,只要是可取得的市售品或依公知的合成方法所適當地合成者,皆可用於本發明。 In addition, in the quantitative analysis such as the analysis of the heterogeneous polymeric acid element, the structure represented by the general formula is a commercially available product which can be obtained or is appropriately synthesized according to a known synthesis method, regardless of the number of elements. Both can be used in the present invention.

即,例如,一般而言,磷鎢酸係以化學式H3(PW12O40)‧nH2O表示,磷鉬酸係以化學式H3(PMo12O40)‧nH2O表示,定量分析中,此式中的P(磷)、O(氧)或W(鎢)或Mo(鉬)之數目不管多或少,只要是市售品可取得者,或可以公知的合成方法適當地合成者,係可於本發明中使用。此時,本發明所規定之異性聚合酸之質量,並非為合成物或市售品中純粹的磷 鎢酸之質量(磷鎢酸含量),而是指以市售品可取得的形態及公知的合成法所能單離的形態中,包含水合水或其他雜質等之狀態下的全質量。 That is, for example, in general, phosphotungstic acid is represented by the chemical formula H 3 (PW 12 O 40 ) ‧nH 2 O, and the phosphomolybdic acid is represented by the chemical formula H 3 (PMo 12 O 40 )‧nH 2 O, quantitative analysis In the formula, the number of P (phosphorus), O (oxygen) or W (tungsten) or Mo (molybdenum) in this formula is not less or less, as long as it is commercially available, or may be appropriately synthesized by a known synthesis method. It can be used in the present invention. In this case, the quality of the heterogeneous polymeric acid specified in the present invention is not the mass of the pure phosphotungstic acid (phosphoric acid content) in the synthetic or commercial product, but refers to a form obtainable by the commercially available product and is known. The form in which the synthesis method can be separated includes the total mass in the state of hydrated water or other impurities.

又,芳基磺酸化合物亦可適用為摻雜物。特別是以式(B1)或(B2)所示之芳基磺酸化合物為佳。 Further, the arylsulfonic acid compound can also be suitably used as a dopant. In particular, an arylsulfonic acid compound represented by the formula (B1) or (B2) is preferred.

式(B1)中,A1雖表示-O-或-S-,但以-O-為佳。A2雖表示萘環或蒽環,但以萘環為佳。A3表示2~4價之全氟聯苯基、p表示A1與A3之鍵結數目,雖為滿足2≦p≦4之整數,但以A3為2價之全氟聯苯基,且p為2者佳。q表示鍵結於A2之磺酸基數目,雖為滿足1≦q≦4之整數,但以2較佳。 In the formula (B1), A 1 represents -O- or -S-, but preferably -O-. Although A 2 represents a naphthalene ring or an anthracene ring, a naphthalene ring is preferred. A 3 represents a perfluorobiphenyl having a valence of 2 to 4, and p represents a number of bonds of A 1 and A 3 , and although it is an integer satisfying 2 ≦p ≦ 4, a perfluorobiphenyl group having a valence of A 3 And p is 2 is better. q represents the number of sulfonic acid groups bonded to A 2 , and although it is an integer satisfying 1 ≦ q ≦ 4, it is preferably 2.

式(B2)中,A4~A8各自獨立地表示氫原子、鹵素原子、氰基、碳數1~20之烷基、碳數1~20之鹵素化烷基或碳數2~20之鹵素化烯基,但A4~A8之中至少3個為鹵素原子。r表示鍵結於萘環之磺酸基數目,雖為滿足1≦r≦4之整數,但以2~4為佳,2更佳。 In the formula (B2), A 4 to A 8 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms or a carbon number of 2 to 20 Halogenated alkenyl group, but at least 3 of A 4 to A 8 are halogen atoms. r represents the number of sulfonic acid groups bonded to the naphthalene ring, and although it is an integer satisfying 1 ≦ r ≦ 4, it is preferably 2 to 4, and more preferably 2.

碳數1~20之鹵素化烷基方面,可舉出三氟甲基、2,2,2-三氟乙基、1,1,2,2,2-五氟乙基、3,3,3-三氟丙基、2,2,3,3,3-五氟丙基、1,1,2,2,3,3,3-七氟丙基、4,4,4- 三氟丁基、3,3,4,4,4-五氟丁基、2,2,3,3,4,4,4-七氟丁基、1,1,2,2,3,3,4,4,4-九氟丁基等。碳數2~20之鹵素化烯基方面,可舉出全氟乙烯基、1-全氟丙烯基、全氟烯丙基、全氟丁烯基等。 Examples of the halogenated alkyl group having 1 to 20 carbon atoms include a trifluoromethyl group, a 2,2,2-trifluoroethyl group, 1,1,2,2,2-pentafluoroethyl group, and 3,3. 3-trifluoropropyl, 2,2,3,3,3-pentafluoropropyl, 1,1,2,2,3,3,3-heptafluoropropyl, 4,4,4- Trifluorobutyl, 3,3,4,4,4-pentafluorobutyl, 2,2,3,3,4,4,4-heptafluorobutyl, 1,1,2,2,3,3 , 4,4,4-nonafluorobutyl and the like. Examples of the halogenated alkenyl group having 2 to 20 carbon atoms include a perfluorovinyl group, a 1-perfluoropropenyl group, a perfluoroallyl group, and a perfluorobutenyl group.

鹵素原子、碳數1~20之烷基的例方面,雖可舉出與上述相同者,但鹵素原子方面,係以氟原子為佳。 Examples of the halogen atom and the alkyl group having 1 to 20 carbon atoms are the same as those described above, but the halogen atom is preferably a fluorine atom.

此等之中,又以A4~A8為氫原子、鹵素原子、氰基、碳數1~10之烷基、碳數1~10之鹵素化烷基或碳數2~10之鹵素化烯基,且A4~A8之中至少3個為氟原子者佳。又以氫原子、氟原子、氰基、碳數1~5之烷基、碳數1~5之氟化烷基或碳數2~5之氟化烯基,且A4~A8之中至少3個為氟原子者更佳。再者,以氫原子、氟原子、氰基、碳數1~5之全氟烷基或碳數1~5之全氟烯基,且A4、A5及A8為氟原子又再更佳。 Among them, A 4 to A 8 are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or a halogen having a carbon number of 2 to 10. Alkenyl, and at least 3 of A 4 to A 8 are preferably fluorine atoms. Further, it is a hydrogen atom, a fluorine atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorinated alkenyl group having 2 to 5 carbon atoms, and among A 4 to A 8 At least 3 of those which are fluorine atoms are preferred. Further, a hydrogen atom, a fluorine atom, a cyano group, a perfluoroalkyl group having 1 to 5 carbon atoms or a perfluoroalkenyl group having 1 to 5 carbon atoms, and A 4 , A 5 and A 8 are fluorine atoms and further good.

此外,所謂全氟烷基,意指烷基的氫原子全部被氟原子取代了之基,所謂全氟烯基,意指烯基的氫原子全部被氟原子取代了之基。 Further, the term "perfluoroalkyl group" means a group in which all hydrogen atoms of an alkyl group are substituted by a fluorine atom, and a perfluoroalkenyl group means a group in which all hydrogen atoms of an alkenyl group are substituted by a fluorine atom.

本發明中之其他摻雜物方面,雖可舉出適當的芳基磺酸化合物之具體例,但不受限於此等。 The other examples of the dopants in the present invention include specific examples of suitable arylsulfonic acid compounds, but are not limited thereto.

本發明之電荷輸送性塗漆中包含摻雜物時,摻雜物之使用量雖因考慮摻雜物之種類、所期望的電荷輸送性之程度等來適當地決定之故而無法一概地規定,以質量比計,相對於本發明由噻吩衍生物所成之電荷輸送性物質(以下,單稱為電荷輸送性物質)1,大概為0.01~50左右的範圍內。 When the dopant is contained in the charge transport paint of the present invention, the amount of the dopant used is appropriately determined depending on the type of the dopant, the degree of the desired charge transport property, and the like, and cannot be generally defined. The charge transporting substance (hereinafter referred to simply as the charge transporting substance) 1 formed of the thiophene derivative of the present invention is approximately in the range of about 0.01 to 50 in terms of the mass ratio.

特別是使用異性聚合酸作為摻雜物時,相對於電荷輸送性物質1,係以使異性聚合酸在質量比計為0.5~30.0左右、較佳為1.0~20.0左右、更佳為2.0~15.0左右、又更佳為3.0~12.0左右、再更佳為4.0~11.0左右,而在使用有機EL元件時,可再現性佳地得到能賦予高亮度之電荷輸送性薄膜。 In particular, when a heterogeneous polymeric acid is used as the dopant, the charge transporting material 1 is made to have an isotropic polymeric acid of about 0.5 to 30.0, preferably about 1.0 to 20.0, more preferably 2.0 to 15.0. In the case of using an organic EL element, a charge transporting film capable of imparting high brightness can be obtained with good reproducibility.

此外,使用芳基磺酸化合物作為摻雜物時,相對於電荷輸送性物質1,係以使芳基磺酸化合物以莫耳 比計為0.05~15.0、較佳為0.10~10.0、更佳為0.25~7.0、又更佳為0.50~5.0、再更佳為0.75~3.0,而在使用有機EL元件時,可再現性佳地得到能賦予高亮度之電荷輸送性薄膜。 Further, when an arylsulfonic acid compound is used as a dopant, the arylsulfonic acid compound is made to be a molar relative to the charge transporting substance 1. The ratio is 0.05 to 15.0, preferably 0.10 to 10.0, more preferably 0.25 to 7.0, still more preferably 0.50 to 5.0, and even more preferably 0.75 to 3.0, and reproducible when using an organic EL element. A charge transporting film capable of imparting high brightness is obtained.

再者,本發明之電荷輸送性塗漆亦可含有有機矽烷化合物。藉由含有有機矽烷,可提高電洞注入能,該電洞注入能係以朝位於與稱為電洞輸送層或發光層之陽極的反對側與電洞注入層相接所積層之層的電洞注入能,其結果乃得以實現更高亮度特性。 Further, the charge transporting paint of the present invention may also contain an organic decane compound. By containing an organic decane, the hole injection energy can be increased, and the hole injection energy can be made to a layer located adjacent to the opposite side of the anode called the hole transport layer or the light-emitting layer and the hole injection layer. Hole injection energy, the result is to achieve higher brightness characteristics.

此有機矽烷化合物方面,可舉出二烷氧基矽烷化合物、三烷氧基矽烷化合物或四烷氧基矽烷化合物。此等可單獨使用1種或組合2種以上來使用。 The aspect of the organodecane compound may, for example, be a dialkoxy decane compound, a trialkoxy decane compound or a tetraalkoxy decane compound. These may be used alone or in combination of two or more.

特別是,在有機矽烷化合物方面,係以二烷氧基矽烷化合物或三烷氧基矽烷化合物為佳,三烷氧基矽烷化合物更佳。 In particular, in terms of the organodecane compound, a dialkoxy decane compound or a trialkoxy decane compound is preferred, and a trialkoxy decane compound is more preferred.

二烷氧基矽烷化合物、三烷氧基矽烷化合物及四烷氧基矽烷化合物方面,可舉例如式(C1)~(C3)所示者。 Examples of the dialkoxy decane compound, the trialkoxy decane compound, and the tetraalkoxy decane compound include those represented by the formulae (C1) to (C3).

SiR’2(OR)2 (C1) SiR' 2 (OR) 2 (C1)

SiR’(OR)3 (C2) SiR'(OR) 3 (C2)

Si(OR)4 (C3) Si(OR) 4 (C3)

式中,R各自獨立地表示可以Z3所取代之碳數1~20之烷基、可以Z3所取代之碳數2~20之烯基、可以Z3所取代之碳數2~20之炔基、可以Z4所取代之碳數6~20之芳基或可以Z4所取代之碳數2~20之雜芳基。R’各 自獨立地表示可以Z5所取代之碳數1~20之烷基、可以Z5所取代之碳數2~20之烯基、可以Z5所取代之碳數2~20之炔基、可以Z6所取代之碳數6~20之芳基或可以Z6所取代之碳數2~20之雜芳基。 In the formula, R each independently represent Z can be substituted with the alkyl group having 1 to 3 carbon atoms of 20, Z may be substituted with the group 3 carbon atoms, alkenyl of 2 to 20, Z may be substituted with a carbon number of 2 to 3 of the 20 alkynyl group may be substituted with Z 4 carbon atoms, an aryl group of 6 to 20 can be of Z or 4 carbon atoms substituted with the heteroaryl group of 2 to 20. R 'each independently represent Z can be substituted with the alkyl group having 1 to 5 carbon atoms of 20, it can be substituted by Z groups of 5 carbon atoms, alkenyl of 2 to 20 may be substituted with Z 5 carbon atoms of an alkynyl group of 2 to 20 , Z may be substituted with an aryl group of 6 carbon atoms of 6 to 20 or may be substituted with Z 6 carbon atoms, the heteroaryl group of 2 to 20.

Z3表示鹵素原子、可以Z7所取代之碳數6~20之芳基或可以Z7所取代之碳數2~20之雜芳基。 Z 3 represents a halogen atom, can be substituted by Z 7 carbon atoms, an aryl group of 6 to 20 can be of Z or 7 carbon atoms substituted with the heteroaryl group of 2 to 20.

Z4表示鹵素原子、可以Z7所取代之碳數1~20之烷基、可以Z7所取代之碳數2~20之烯基或可以Z7所取代之碳數2~20之炔基。 Z 4 represents a halogen atom, Z can be substituted with an alkyl group of 7 to 20 carbon atoms, the sum may be substituted by Z 7 carbon atoms, an alkenyl group of 2 to 20, or Z may be substituted with an alkynyl of 2 to 7 carbon atoms of the group 20 .

Z5表示鹵素原子、可以Z7所取代之碳數6~20之芳基、可以Z7所取代之碳數2~20之雜芳基、環氧環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基(-NHCONH2)、氫硫基、異氰酸酯基(-NCO)、胺基、-NHY1基或-NY2Y3基。 Z 5 represents a halogen atom, an aryl group having 6 to 20 carbon atoms which may be substituted by Z 7 , a heteroaryl group having 2 to 20 carbon atoms which may be substituted by Z 7 , an epoxycyclohexyl group, a glycidyloxy group, a methyl group Acryloxy, acryloxy, ureido (-NHCONH 2 ), thiol, isocyanate (-NCO), amine, -NHY 1 or -NY 2 Y 3 .

Z6表示鹵素原子、可以Z7所取代之碳數1~20之烷基、可以Z7所取代之碳數2~20之烯基、可以Z7所取代之碳數2~20之炔基、環氧環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基(-NHCONH2)、氫硫基、異氰酸酯基(-NCO)、胺基、-NHY1基或-NY2Y3基。 Z 6 represents a halogen atom, Z can be substituted with an alkyl group of 7 to 20 carbon atoms, the sum may be substituted by Z 7 carbon atoms, an alkenyl group of 2 to 20, Z may be substituted with an alkynyl group having a carbon number of 7 to 20 of 2 , epoxycyclohexyl, glycidoxy, methacryloxy, propyleneoxy, ureido (-NHCONH 2 ), thiol, isocyanate (-NCO), amine, -NHY 1 Or -NY 2 Y 3 base.

Y1~Y3各自獨立地表示可以Z7所取代之碳數1~20之烷基、可以Z7所取代之碳數2~20之烯基、可以Z7所取代之碳數2~20之炔基、可以Z7所取代之碳數6~20之芳基或可以Z7所取代之碳數2~20之雜芳基。 Y 1 ~ Y 3 each independently represent Z can be substituted with an alkyl group of 7 to 20 carbon atoms, the sum may be substituted by Z 7 carbon atoms, an alkenyl group of 2 to 20 may be substituted with Z 2 of 7 to 20 carbon atoms the alkynyl group may be substituted with Z 7 carbon atoms, an aryl group of 6 to 20 can be of Z or 7 carbon atoms substituted with the heteroaryl group of 2 to 20.

Z7表示鹵素原子、胺基、硝基、氰基或氫硫基。 Z 7 represents a halogen atom, an amine group, a nitro group, a cyano group or a hydrogenthio group.

式(C1)~(C3)中之鹵素原子、碳數1~20之烷基、碳數2~20之烯基、碳數2~20之炔基及碳數6~20之芳基方面,可舉出與上述相同者。碳數2~20之雜芳基方面,可舉出2-噻吩基、3-噻吩基、2-喃基、3-喃基、2-噁唑基、4-噁唑基、5-噁唑基、3-異噁唑基、4-異噁唑基、5-異噁唑基、2-噻唑基、4-噻唑基、5-噻唑基、3-異噻唑基、4-異噻唑基、5-異噻唑基、2-咪唑基、4-咪唑基、2-吡啶基、3-吡啶基、4-吡啶基等。 a halogen atom in the formula (C1) to (C3), an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, and an aryl group having 6 to 20 carbon atoms; The same as above can be mentioned. Examples of the heteroaryl group having 2 to 20 carbon atoms include a 2-thienyl group, a 3-thienyl group, a 2-anyl group, a 3-anthyl group, a 2-oxazolyl group, a 4-oxazolyl group, and a 5-oxazole. , 3-isoxazolyl, 4-isoxazolyl, 5-isoxazolyl, 2-thiazolyl, 4-thiazolyl, 5-thiazolyl, 3-isothiazolyl, 4-isothiazolyl, 5-isothiazolyl, 2-imidazolyl, 4-imidazolyl, 2-pyridyl, 3-pyridyl, 4-pyridyl and the like.

R及R’中,烷基、烯基及炔基之碳數,較佳為10以下,更佳為6以下,又更佳為4以下。又,芳基及雜芳基之碳數,較佳為14以下,更佳為10以下,又更佳為6以下。 The number of carbon atoms of the alkyl group, the alkenyl group and the alkynyl group in R and R' is preferably 10 or less, more preferably 6 or less, still more preferably 4 or less. Further, the carbon number of the aryl group and the heteroaryl group is preferably 14 or less, more preferably 10 or less, still more preferably 6 or less.

R方面,係以可以Z3所取代之碳數1~20之烷基、可以Z3所取代之碳數2~20之烯基或可以Z4所取代之碳數6~20之芳基為佳,可以Z3所取代之碳數1~6之烷基、碳數2~6之烯基或可以Z4所取代之苯基更佳,可以Z3所取代之碳數1~4之烷基或可以Z4所取代之苯基又再更佳,可以Z3所取代之甲基或乙基又更佳。 R aspect, Z can be based to 3 carbon atoms substituted with an alkyl group of 1 to 20, the sum can be substituted with Z 3 carbon atoms alkenyl having 2 to 20 can be of Z or 4 carbon atoms of the substituted aryl group of 6 to 20 of Jia, Z may be substituted with an alkyl group of 3 to 6 carbon atoms, the carbon atoms of the alkenyl group having 2 to 6, or Z can be substituted with the phenyl group more preferably 4, Z can be substituted with alkyl of 1 to 3 carbon atoms of 4 The phenyl group which may be substituted with Z 4 may be more preferably further, and the methyl group or ethyl group which may be substituted by Z 3 is more preferably.

又,R’方面,可舉出可以Z5所取代之碳數1~20之烷基或可以Z6所取代之碳數6~20之芳基為佳,可以Z5所取代之碳數1~10之烷基或可以Z6所取代之碳數6~14之芳基更佳,可以Z5所取代之碳數1~6之烷基或可以Z6所取代之碳數6~10之芳基又再更佳,可以Z5所取 代之碳數1~4之烷基或可以Z6所取代之苯基又更佳。 Further, in the case of R', an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 5 or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 6 may be mentioned, and the carbon number which may be substituted by Z 5 is 1 The alkyl group of ~10 or the aryl group having 6 to 14 carbon atoms which may be substituted by Z 6 is more preferably an alkyl group having 1 to 6 carbon atoms which may be substituted by Z 5 or a carbon number of 6 to 10 which may be substituted by Z 6 Further, the aryl group is more preferably an alkyl group having 1 to 4 carbon atoms which may be substituted by Z 5 or a phenyl group which may be substituted by Z 6 .

此外,複數的R可全部相同或相異,複數的R’亦可全部相同或相異。 Further, the plurality of R's may all be the same or different, and the plural R's may all be the same or different.

Z3方面,係以鹵素原子或可以Z7所取代之碳數6~20之芳基為佳,以氟原子或可以Z7所取代之苯基更佳,以不存在者(即非取代者)為最佳。 In the Z 3 aspect, a halogen atom or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 7 is preferred, and a fluorine atom or a phenyl group which may be substituted by Z 7 is more preferable, and the non-existent (ie, non-substituted) ) is the best.

又,Z4方面,係以鹵素原子或可以Z7所取代之碳數6~20之烷基為佳,氟原子或可以Z7所取代之碳數1~10之烷基更佳,以不存在者(即非取代者)為最佳。 And, Z 4 aspect, system Z may be a halogen atom or a substituted 6 of 7 to 20 carbon atoms, preferably the alkyl group, a fluorine atom, or Z may be substituted with an alkyl group of 7 carbon atoms, more preferably of 1 to 10, so as not to The existent (ie non-substitute) is optimal.

此外,Z5方面,係以鹵素原子、可以Z7所取代之苯基、可以Z7所取代之喃基、環氧環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基、氫硫基、異氰酸酯基、胺基、可以Z7所取代之苯基胺基或可以Z7所取代之二苯基胺基為佳,鹵素原子更佳,以氟原子或不存在者(即非取代者)又再更佳。 Further, Z 5 aspect, based halogen atom, Z can be substituted with phenyl group of 7, it can be substituted by Z 7, tetrahydrothiopyranyl, epoxy cyclohexyl group, glycidoxy group, Bing Xixi methyl group, an oxygen Bing Xixi , ureido, mercapto, isocyanate, amine groups may be substituted with the Z 7 Z or may phenylamino substituted diphenyl group of preferably 7, more preferably a halogen atom, a fluorine atom or The survivor (ie, the non-substitute) is even better.

又,Z6方面,係以鹵素原子、可以Z7所取代之碳數1~20之烷基、可以Z7所取代之喃基、環氧環己基、環氧丙氧基、甲基丙烯醯氧基、丙烯醯氧基、脲基、氫硫基、異氰酸酯基、胺基、可以Z7所取代之苯基胺基或可以Z7所取代之二苯基胺基為佳,鹵素原子更佳,以氟原子或不存在者(即非取代者)又再更佳。 And, Z aspect. 6, lines halogen atom, Z can be substituted with an alkyl group of 7 to 20 carbon atoms, the sum may be substituted by Z 7, tetrahydrothiopyranyl, epoxy cyclohexyl group, glycidoxy group, methyl Bing Xixi group, Bing Xixi, ureido, mercapto, isocyanate, amine groups may be substituted with the Z 7 Z or may phenylamino substituted diphenyl group of preferably 7, more preferably a halogen atom It is better to use a fluorine atom or a non-existent (ie, non-substituent).

然後,Z7方面,係以鹵素原子為佳,以氟原子或不存在者(即非取代者)更佳。 Then, in the case of Z 7 , a halogen atom is preferred, and a fluorine atom or a non-existent (i.e., non-substituted) is more preferred.

以下,雖列舉本發明中可使用的有機矽烷化 合物之具體例,但非受限於此等者。 Hereinafter, the organic alkylation which can be used in the present invention is listed. Specific examples of the compound are not limited thereto.

二烷氧基矽烷化合物的具體例方面,可舉出二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、甲基乙基二甲氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、甲基丙基二甲氧基矽烷、甲基丙基二乙氧基矽烷、二異丙基二甲氧基矽烷、苯基甲基二甲氧基矽烷、乙烯基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基甲基二乙氧基矽烷、3-(3,4-環氧環己基)乙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、N-(2-胺基乙基)胺基丙基甲基二甲氧基矽烷、3,3,3-三氟丙基甲基二甲氧基矽烷等。 Specific examples of the dialkoxy decane compound include dimethyl dimethoxy decane, dimethyl diethoxy decane, methyl ethyl dimethoxy decane, and diethyl dimethoxy decane. , diethyldiethoxydecane, methylpropyldimethoxydecane, methylpropyldiethoxydecane, diisopropyldimethoxydecane, phenylmethyldimethoxydecane, Vinylmethyldimethoxydecane, 3-glycidoxypropylmethyldimethoxydecane, 3-glycidoxypropylmethyldiethoxydecane, 3-(3,4 -Epoxycyclohexyl)ethylmethyldimethoxydecane, 3-methylpropenyloxypropylmethyldimethoxydecane, 3-methylpropenyloxypropylmethyldiethoxy Decane, 3-mercaptopropylmethyldimethoxydecane, γ-aminopropylmethyldiethoxydecane, N-(2-aminoethyl)aminopropylmethyldimethoxydecane , 3,3,3-trifluoropropylmethyldimethoxydecane, and the like.

三烷氧基矽烷化合物的具體例方面,可舉出甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、戊基三甲氧基矽烷、戊基三乙氧基矽烷、庚基三甲氧基矽烷、庚基三乙氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、十二烷基三甲氧基矽烷、十二烷基三乙氧基矽烷、十六烷基三甲氧基矽烷、十六烷基三乙氧基矽烷、十八烷基三甲氧基矽烷、十八烷基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、γ-胺基丙基三甲氧基矽烷、3-胺基丙基三乙 氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三乙氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、十二烷基三乙氧基矽烷、3,3,3-三氟丙基三甲氧基矽烷、(三乙氧基矽烷基)環己烷、全氟辛基乙基三乙氧基矽烷、三乙氧基氟矽烷、十三氟-1,1,2,2-四氫辛基三乙氧基矽烷、五氟苯基三甲氧基矽烷、五氟苯基三乙氧基矽烷、3-(七氟異丙氧基)丙基三乙氧基矽烷、十七氟-1,1,2,2-四氫癸基三乙氧基矽烷、三乙氧基-2-噻吩基矽烷、3-(三乙氧基矽烷基)呋喃等。 Specific examples of the trialkoxydecane compound include methyltrimethoxydecane, methyltriethoxydecane, ethyltrimethoxydecane, ethyltriethoxydecane, and propyltrimethoxydecane. , propyl triethoxy decane, butyl trimethoxy decane, butyl triethoxy decane, pentyl trimethoxy decane, pentyl triethoxy decane, heptyl trimethoxy decane, heptyl triethyl Oxydecane, octyltrimethoxydecane, octyltriethoxydecane, dodecyltrimethoxydecane,dodecyltriethoxydecane,cetyltrimethoxydecane,hexadecane Triethoxy decane, octadecyl trimethoxy decane, octadecyl triethoxy decane, phenyl trimethoxy decane, phenyl triethoxy decane, vinyl trimethoxy decane, vinyl Triethoxy decane, γ-aminopropyltrimethoxydecane, 3-aminopropyltriethyl Oxydecane, γ-glycidoxypropyltrimethoxydecane, 3-glycidoxypropyltriethoxydecane, γ-methylpropoxypropyltrimethoxydecane, γ- Methyl propylene methoxy propyl triethoxy decane, triethoxy (4-(trifluoromethyl) phenyl) decane, dodecyl triethoxy decane, 3, 3, 3-trifluoro Propyltrimethoxydecane, (triethoxydecyl)cyclohexane, perfluorooctylethyltriethoxydecane, triethoxyfluorodecane, decafluoro-1,1,2,2- Tetrahydrooctyltriethoxydecane, pentafluorophenyltrimethoxydecane, pentafluorophenyltriethoxydecane, 3-(heptafluoroisopropoxy)propyltriethoxydecane, heptafluorosilane -1,1,2,2-tetrahydroindenyltriethoxydecane, triethoxy-2-thienyldecane, 3-(triethoxydecylalkyl)furan, and the like.

四烷氧基矽烷化合物的具體例方面,可舉出四甲氧基矽烷、四乙氧基矽烷、四丙氧基矽烷等。 Specific examples of the tetraalkoxydecane compound include tetramethoxynonane, tetraethoxysilane, tetrapropoxydecane, and the like.

此等之中,係以3,3,3-三氟丙基甲基二甲氧基矽烷、三乙氧基(4-(三氟甲基)苯基)矽烷、3,3,3-三氟丙基三甲氧基矽烷、全氟辛基乙基三乙氧基矽烷、五氟苯基三甲氧基矽烷、五氟苯基三乙氧基矽烷等為佳。 Among these, 3,3,3-trifluoropropylmethyldimethoxydecane, triethoxy(4-(trifluoromethyl)phenyl)decane, 3,3,3-three Fluoryltrimethoxydecane, perfluorooctylethyltriethoxydecane, pentafluorophenyltrimethoxydecane, pentafluorophenyltriethoxydecane, and the like are preferred.

本發明之電荷輸送性塗漆中含有機矽烷化合物時,其含量若考慮維持所得之薄膜的高電荷輸送性之點,相對於電荷輸送性物質及摻雜物之總質量,通常為0.1~50質量%左右,但若考慮用以抑制所得之薄膜的電荷輸送性之降低,且對提高以與稱為電洞輸送層或發光層之陽極於反對側與電洞注入層相接之方式所積層之層的電洞注入能,較佳為0.5~40質量%左右、更佳為0.8~30質量%左右、又更佳為1~20質量%。 When the mesogen compound is contained in the charge transporting paint of the present invention, the content thereof is usually 0.1 to 50 with respect to the total mass of the charge transporting substance and the dopant, in consideration of maintaining the high charge transportability of the obtained film. The mass % is about, but it is considered to suppress the decrease in the charge transportability of the obtained film, and to increase the adhesion of the anode called the hole transport layer or the light-emitting layer to the opposite side and the hole injection layer. The hole injection energy of the layer is preferably about 0.5 to 40% by mass, more preferably about 0.8 to 30% by mass, still more preferably 1 to 20% by mass.

此外,本發明之電荷輸送性塗漆中,除了上述由噻吩衍生物所成之電荷輸送性物質之外,亦可使用公知的其他電荷輸送性物質。 Further, in the charge transporting paint of the present invention, in addition to the above-described charge transporting substance formed of a thiophene derivative, other known charge transporting materials may be used.

調製電荷輸送性塗漆時所用的有機溶劑方面,可使用得以良好地溶解電荷輸送性物質及摻雜物之高溶解性溶劑。 As the organic solvent used in the preparation of the charge transport paint, a highly soluble solvent which satisfactorily dissolves the charge transporting substance and the dopant can be used.

如此的高溶解性溶劑方面,可使用例如N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮、1,3-二甲基-2-四氫咪唑酮、二乙二醇單甲基醚等之有機溶劑。此等之溶劑可單獨地使用1種或混合2種以上使用,其使用量相對於塗漆中使用的溶劑全體,可為5~100質量%。 As such a highly soluble solvent, for example, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2 can be used. An organic solvent such as tetrahydroimidazolidone or diethylene glycol monomethyl ether. These solvents may be used singly or in combination of two or more kinds, and the amount thereof may be from 5 to 100% by mass based on the total amount of the solvent used in the painting.

此外,電荷輸送性物質及摻雜物係以皆可完全溶解於上述溶劑者或是成均一地分散之狀態者為佳,完全溶解者更佳。 Further, the charge transporting substance and the dopant are preferably those which are completely dissolved in the solvent or are uniformly dispersed, and are more preferably dissolved.

又,本發明中,係因於塗漆中至少含有1種在25℃具有10~200mPa‧s特別是35~150mPa‧s之黏度、常壓(大氣壓)下沸點為50~300℃特別是150~250℃之高黏度有機溶劑,而得以使塗漆之黏度容易調整,其結果係可再現性佳地賦予平坦性高的薄膜,且可實現能因應所用塗佈方法之塗漆的調整。 Further, in the present invention, at least one of the paints has a viscosity of 10 to 200 mPa·s, particularly 35 to 150 mPa·s at 25 ° C, and a boiling point of 50 to 300 ° C at atmospheric pressure (atmospheric pressure), particularly 150. The high viscosity organic solvent of ~250 ° C can easily adjust the viscosity of the paint, and as a result, the film having high flatness can be imparted with good reproducibility, and the adjustment of the paint according to the coating method used can be realized.

高黏度有機溶劑方面,並無特別限定,可舉例如環己醇、乙二醇、乙二醇二環氧丙基醚、1,3-辛二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇、1,3-丁 二醇、2,3-丁二醇、1,4-丁二醇、丙二醇、己二醇等。此等之溶劑可單獨使用1種或混合2種以上使用。 The high-viscosity organic solvent is not particularly limited, and examples thereof include cyclohexanol, ethylene glycol, ethylene glycol diepoxypropyl ether, 1,3-octanediol, diethylene glycol, dipropylene glycol, and triethyl ethane. Glycol, tripropylene glycol, 1,3-butyl Glycol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexanediol, and the like. These solvents may be used alone or in combination of two or more.

對本發明之塗漆中所用的溶劑全體而言,高黏度有機溶劑之添加比例係以固體不析出之範圍內者佳,且只要固體不析出,添加比例係以5~80質量%為佳。 In the entire solvent used in the paint of the present invention, the addition ratio of the high-viscosity organic solvent is preferably in the range where the solid does not precipitate, and the addition ratio is preferably 5 to 80% by mass as long as the solid does not precipitate.

再者,以對基板之沾濕性的提昇、溶劑之表面張力的調整、極性的調整、沸點的調整等之目的下,係可使其他溶劑以相對於塗漆中使用之溶劑全體,較佳為1~90質量%、更佳為1~50質量%之比例混合。 Further, in order to improve the wettability of the substrate, the adjustment of the surface tension of the solvent, the adjustment of the polarity, the adjustment of the boiling point, etc., it is preferred to use other solvents as the solvent to be used in the painting. It is mixed in a ratio of 1 to 90% by mass, more preferably 1 to 50% by mass.

如此的溶劑方面,可舉例如丙二醇單甲基醚、乙二醇單丁基醚、二乙二醇二乙基醚、二乙二醇二甲基醚、二乙二醇單乙基醚乙酸酯、二乙二醇單丁基醚乙酸酯、二丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、二乙二醇單乙基醚、二丙酮醇、γ-丁內酯、乙基乳酸酯、n-己基乙酸酯等,但不受限於此等。此等之溶劑可單獨使用1種或混合2種以上使用。 Examples of such a solvent include propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, and diethylene glycol monoethyl ether acetate. Ester, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, B The base lactate, n-hexyl acetate, and the like are not limited thereto. These solvents may be used alone or in combination of two or more.

本發明之塗漆的黏度,雖是因應欲製作之薄膜的厚度等或固形分濃度而適當地設定者,但通常是在25℃下為1~50mPa‧s。 The viscosity of the paint of the present invention is appropriately set depending on the thickness of the film to be produced or the solid content concentration, but is usually 1 to 50 mPa·s at 25 °C.

又,本發明中之電荷輸送性塗漆的固形分濃度,雖可考量塗漆的黏度及表面張力等或欲製作之薄膜的厚度等而來適當地設定即可,但通常為0.1~10.0質量%左右,若考慮使塗漆的塗佈性提昇的話,則較佳為0.5~5.0質量%、更佳為1.0~3.0質量%。 Further, the solid content concentration of the charge transporting paint in the present invention may be appropriately set in consideration of the viscosity of the paint, the surface tension, or the like, or the thickness of the film to be produced, but it is usually 0.1 to 10.0 mass. When the coating property of the paint is increased, it is preferably from 0.5 to 5.0% by mass, more preferably from 1.0 to 3.0% by mass.

藉由將上述電荷輸送性塗漆塗佈於基材上予以燒成,而得以於基材上使電荷輸送性薄膜形成。 The charge transporting coating is applied to a substrate by baking the above-described charge transporting paint to form a charge transporting film.

塗漆的塗佈方法方面,並無特別限定,可舉出浸漬法、旋轉塗佈法、轉錄印刷法、輥筒塗佈法、刷毛塗佈、噴墨法、噴霧法、狹縫塗佈法等,並以能因應塗佈方法而調節塗漆的黏度及表面張力者為佳。 The coating method of the lacquer is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transcription printing method, a roll coating method, a brush coating method, an inkjet method, a spray method, and a slit coating method. Etc., and it is preferable to adjust the viscosity and surface tension of the paint according to the coating method.

又,使用本發明之塗漆時,燒成氛圍也無特別地限定,使其不只是在大氣氛圍中,即使是在氮等之惰性氣體或真空中,亦可獲得具有均一的成膜面及高電荷輸送性之薄膜。 Further, when the paint of the present invention is used, the firing atmosphere is not particularly limited, and it is possible to obtain a uniform film formation surface even in an inert gas such as nitrogen or a vacuum in an atmosphere. A film with high charge transportability.

燒成溫度方面,在考量所得之薄膜的用途、賦予所得之薄膜之電荷輸送性之程度等,雖可於100~260℃左右的範圍內適當地設定,但使用所得之薄膜作為有機EL元件的電洞注入層時,係以140~250℃左右為佳、145~240℃左右更佳。 In the case of the use of the film to be used, the degree of charge transport property of the obtained film, and the like, can be appropriately set in the range of about 100 to 260 ° C, but the obtained film is used as the organic EL element. When the hole is injected into the layer, it is preferably about 140 to 250 ° C, more preferably about 145 to 240 ° C.

此外,燒成時,在使更高的均一成膜性表現、於基材上使反應進行的目的之下,亦可附以2階段以上之溫度變化。加熱若可使用例如加熱板或烘箱等適當的機器進行即可。 Further, at the time of firing, a temperature change of two or more stages may be attached for the purpose of exhibiting a higher uniform film formability and allowing the reaction to proceed on the substrate. Heating may be carried out using a suitable machine such as a hot plate or an oven.

電荷輸送性薄膜的膜厚雖未特別限定,但於有機EL元件內作為電洞注入層使用時,係以5~200nm為佳。使膜厚變化的方法方面,係有使塗漆中的固形分濃度變化、使塗佈時的基板上之溶液量變化等之方法。 The film thickness of the charge transporting film is not particularly limited, but is preferably 5 to 200 nm when used as a hole injection layer in an organic EL device. The method of changing the film thickness is a method of changing the solid content concentration in the paint, changing the amount of the solution on the substrate during coating, and the like.

〔有機EL元件〕 [Organic EL device]

使用本發明之電荷輸送性塗漆製作OLED元件時,其使用材料或製作方法方面,雖可舉出如下述者,但不受限於此等。 When the OLED device is produced by using the charge transporting paint of the present invention, the materials used and the production method thereof are as follows, but are not limited thereto.

使用之電極基板係以預先實施以洗劑、醇、純水等之液體洗淨進行淨化者佳,例如,陽極基板係以使用前即以UV臭氧處理、氧-電漿處理等之表面處理者為佳。惟,陽極材料以有機物為主成分時,亦可不進行表面處理。 The electrode substrate to be used is preferably purified by washing with a liquid such as a lotion, alcohol, or pure water in advance. For example, the anode substrate is a surface treatment agent such as UV ozone treatment or oxygen-plasma treatment before use. It is better. However, when the anode material is mainly composed of an organic substance, surface treatment may not be performed.

具有由本發明之電荷輸送性塗漆所得之薄膜而成的電洞注入層之OLED元件之製作方法的例係如下。 An example of a method of producing an OLED element having a hole injection layer formed of a film obtained by the charge transport coating of the present invention is as follows.

藉由上述之方法,係於陽極基板上塗佈本發明之電荷輸送性塗漆予以燒成,且於電極上製作電洞注入層。將此導入真空蒸鍍裝置內,依序電鍍電洞輸送層、發光層、電子輸送層、電子輸送層/電洞阻礙層、陰極金屬而為OLED元件。此外,因應所需而得以於發光層與電洞輸送層之間設置電子阻礙層。 According to the above method, the charge transporting paint of the present invention is applied onto an anode substrate and fired, and a hole injection layer is formed on the electrode. This was introduced into a vacuum evaporation apparatus, and the hole transport layer, the light-emitting layer, the electron transport layer, the electron transport layer/hole blocking layer, and the cathode metal were sequentially plated to form an OLED element. Further, an electron blocking layer is provided between the light-emitting layer and the hole transport layer as needed.

陽極材料方面,可舉出以銦錫氧化物(ITO)、銦鋅氧化物(IZO)所代表的透明電極、由以鋁所代表的金屬或此等之合金等所構成之金屬陽極,係以平坦化處理者為佳。亦可使用具有高電荷輸送性之聚噻吩衍生物或聚苯胺衍生物。 Examples of the anode material include a transparent electrode represented by indium tin oxide (ITO), indium zinc oxide (IZO), a metal represented by aluminum or an alloy of the like, and the like. The flattening processor is better. A polythiophene derivative or a polyaniline derivative having high charge transportability can also be used.

此外,構成金屬陽極之其他金屬方面,可舉出鈧、鈦、釩、鉻、錳、鐵、鈷、鎳、銅、鋅、鎵、釔、 鋯、鈮、鉬、釕、銠、鈀、鎘、銦、鈧、鑭、鈰、鐠、釹、鉕、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鉿、鉈、鎢、錸、鋨、銥、鉑、金、鈦、鉛、鉍或此等之合金等,但不受限於此等。 Further, examples of other metals constituting the metal anode include tantalum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, and antimony. Zirconium, hafnium, molybdenum, niobium, tantalum, palladium, cadmium, indium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, lanthanum, cerium, ytterbium Tungsten, tantalum, niobium, tantalum, platinum, gold, titanium, lead, antimony or the like, but are not limited thereto.

形成電洞輸送層之材料方面,可舉出(三苯基胺)二聚物衍生物、[(三苯基胺)二聚物]螺旋二聚物、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-聯苯胺(α-NPD)、N,N’-雙(萘-2-基)-N,N’-雙(苯基)-聯苯胺、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-聯苯胺、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-螺旋雙茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-螺旋雙茀、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-二甲基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-二甲基-茀、N,N’-雙(3-甲基苯基)-N,N’-雙(苯基)-9,9-二苯基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-9,9-二苯基-茀、N,N’-雙(萘-1-基)-N,N’-雙(苯基)-2,2’-二甲基聯苯胺、2,2’,7,7’-肆(N,N-二苯基胺基)-9,9-螺旋雙茀、9,9-雙[4-(N,N-雙-聯苯基-4-基-胺基)苯基]-9H-茀、9,9-雙[4-(N,N-雙-萘-2-基-胺基)苯基]-9H-茀、9,9-雙[4-(N-萘-1-基-N-苯基胺基)-苯基]-9H-茀、2,2’,7,7’-肆[N-萘基(苯基)-胺基]-9,9-螺旋雙茀、N,N’-雙(菲-9-基)-N,N’-雙(苯基)-聯苯胺、2,2’-雙[N,N-雙(聯苯基-4-基)胺基]-9,9-螺旋雙茀、2,2’-雙(N,N-二苯基胺基)-9,9-螺旋雙茀、二-[4-(N,N-二(p-甲苯基)胺基)-苯基] 環己烷、2,2’,7,7’-四(N,N-二(p-甲苯基))胺基-9,9-螺旋雙茀、N,N,N’,N’-四-萘-2-基-聯苯胺、N,N,N’,N’-四-(3-甲基苯基)-3,3’-二甲基聯苯胺、N,N’-二(萘基)-N,N’-二(萘-2-基)-聯苯胺、N,N,N’,N’-四(萘基)-聯苯胺、N,N’-二(萘-2-基)-N,N’-二苯基聯苯胺-1,4-二胺、N1,N4-二苯基-N1,N4-二(m-甲苯基)苯-1,4-二胺、N2,N2,N6,N6-四苯基萘-2,6-二胺、參(4-(喹啉-8-基)苯基)胺、2,2’-雙(3-(N,N-二(p-甲苯基)胺基)苯基)聯苯、4,4’,4”-參[3-甲基苯基(苯基)胺基]三苯基胺(m-MTDATA)、4,4’,4”-參[1-萘基(苯基)胺基]三苯基胺(1-TNATA)等之三芳基胺類、5,5”-雙-{4-[雙(4-甲基苯基)胺基]苯基}-2,2’:5’,2”-聯三噻吩(BMA-3T)等之寡聚噻吩類等。 Examples of the material for forming the hole transport layer include a (triphenylamine) dimer derivative, a [(triphenylamine) dimer] helical dimer, and N,N'-bis(naphthalene-1). -yl)-N,N'-bis(phenyl)-benzidine (α-NPD), N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-benzidine , N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine, N,N'-bis(3-methylphenyl)-N,N'- Bis(phenyl)-9,9-helical biguanide, N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-helical biguanide, N,N '-Bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-dimethyl-anthracene, N,N'-bis(naphthalen-1-yl)-N,N '-Bis(phenyl)-9,9-dimethyl-anthracene, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-9,9-diphenyl Base-茀,N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-9,9-diphenyl-fluorene, N,N'-bis(naphthalene-1- -N,N'-bis(phenyl)-2,2'-dimethylbenzidine, 2,2',7,7'-indole (N,N-diphenylamino)-9, 9-Helical biguanide, 9,9-bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-indole, 9,9-bis[4-(N ,N-bis-naphthalen-2-yl-amino)phenyl]-9H-indole, 9,9-bis[4-(N-naphthalen-1-yl-N-phenylamino)-phenyl] -9H-茀, 2,2',7,7'-肆[N-naphthyl(phenyl)-amino]-9,9-helical biguanide, N,N'-bis(phenanthrene-9- )-N,N'-bis(phenyl)-benzidine, 2,2'-bis[N,N-bis(biphenyl-4-yl)amino]-9,9-helical biguanide, 2 , 2'-bis(N,N-diphenylamino)-9,9-helical biguanide, bis-[4-(N,N-bis(p-methylphenyl)amino)-phenyl] ring Hexane, 2,2',7,7'-tetrakis (N,N-bis(p-tolyl))amino-9,9-helical biguanide, N,N,N',N'-tetra- Naphthalen-2-yl-benzidine, N,N,N',N'-tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine, N,N'-di(naphthyl) )-N,N'-bis(naphthalen-2-yl)-benzidine, N,N,N',N'-tetrakis(naphthyl)-benzidine, N,N'-di(naphthalen-2-yl) -N,N'-diphenylbenzidine-1,4-diamine, N 1 ,N 4 -diphenyl-N 1 ,N 4 -di(m-tolyl)benzene-1,4-di Amine, N 2 , N 2 , N 6 , N 6 -tetraphenylnaphthalene-2,6-diamine, ginseng (4-(quinolin-8-yl)phenyl)amine, 2,2'-bis ( 3-(N,N-bis(p-tolyl)amino)phenyl)biphenyl, 4,4',4"-gin[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA), 4,4',4"-para-[1-naphthyl(phenyl)amino]triphenylamine (1-TNATA), etc., triarylamines, 5,5"-bis- Oligomeric thiophenes such as {4-[bis(4-methylphenyl)amino]phenyl}-2,2':5',2"-bitrithiophene (BMA-3T).

形成發光層之材料方面,可舉出參(8-羥基喹啉)鋁(III)(Alq3)、雙(8-羥基喹啉)鋅(II)(Znq2)、雙(2-甲基-8-羥基喹啉)(p-苯基酚鹽)鋁(III)(BAlq)、4,4’-雙(2,2-二苯基乙烯基)聯苯、9,10-二(萘-2-基)蒽、2-t-丁基-9,10-二(萘-2-基)蒽、2,7-雙[9,9-二(4-甲基苯基)-茀-2-基]-9,9-二(4-甲基苯基)茀、2-甲基-9,10-雙(萘-2-基)蒽、2-(9,9-螺旋雙茀-2-基)-9,9-螺旋雙茀、2,7-雙(9,9-螺旋雙茀-2-基)-9,9-螺旋雙茀、2-[9,9-二(4-甲基苯基)-茀-2-基]-9,9-二(4-甲基苯基)茀、2,2’-二芘基-9,9-螺旋雙茀、1,3,5-參(芘-1-基)苯、9,9-雙[4-(芘基)苯基]-9H-茀、2,2’-雙 (9,10-二苯基蒽)、2,7-二芘基-9,9-螺旋雙茀、1,4-二(芘-1-基)苯、1,3-二(芘-1-基)苯、6,13-二(聯苯基-4-基)并五苯、3,9-二(萘-2-基)苝、3,10-二(萘-2-基)苝、參[4-(芘基)-苯基]胺、10,10’-二(聯苯基-4-基)-9,9’-雙蒽、N,N’-二(萘-1-基)-N,N’-二苯基-[1,1’:4’,1”:4”,1'''-四苯基]-4,4'''-二胺、4,4’-二[10-(萘-1-基)蒽-9-基]聯苯、二苯并{[f,f’]-4,4’,7,7’-四苯基}二茚并[1,2,3-cd:1’,2’,3’-1m]苝、1-(7-(9,9’-雙蒽-10-基)-9,9-二甲基-9H-茀-2-基)芘、1-(7-(9,9’-雙蒽-10-基)-9,9-二己基-9H-茀-2-基)芘、1,3-雙(咔唑-9-基)苯、1,3,5-參(咔唑-9-基)苯、4,4’,4”-參(咔唑-9-基)三苯基胺、4,4’-雙(咔唑-9-基)聯苯基(CBP)、4,4’-雙(咔唑-9-基)-2,2’-二甲基聯苯、2,7-雙(咔唑-9-基)-9,9-二甲基茀、2,2’,7,7’-肆(咔唑-9-基)-9,9-螺旋雙茀、2,7-雙(咔唑-9-基)-9,9-二(p-甲苯基)茀、9,9-雙[4-(咔唑-9-基)-苯基]茀、2,7-雙(咔唑-9-基)-9,9-螺旋雙茀、1,4-雙(三苯基矽烷基)苯、1,3-雙(三苯基矽烷基)苯、雙(4-N,N-二乙基胺基-2-甲基苯基)-4-甲基苯基甲烷、2,7-雙(咔唑-9-基)-9,9-二辛基茀、4,4”-二(三苯基矽烷基)-p-三苯基、4,4’-二(三苯基矽烷基)聯苯、9-(4-t-丁基苯基)-3,6-雙(三苯基矽烷基)-9H-咔唑、9-(4-t-丁基苯基)-3,6-三苯甲基-9H-咔唑、9-(4-t-丁基苯基)-3,6-雙(9-(4-甲氧基苯基)-9H-茀-9-基)-9H-咔唑、2,6-雙(3-(9H-咔唑-9-基)苯基)吡啶、三苯基 (4-(9-苯基-9H-茀-9-基)苯基)矽烷、9,9-二甲基-N,N-二苯基-7-(4-(1-苯基-1H-苯并[d]咪唑-2-基)苯基)-9H-茀-2-胺、3,5-雙(3-(9H-咔唑-9-基)苯基)吡啶、9,9-螺旋雙茀-2-基-二苯基-膦氧化物、9,9’-(5-(三苯基矽烷基)-1,3-伸苯基)雙(9H-咔唑)、3-(2,7-雙(二苯基磷氧基)-9-苯基-9H-茀-9-基)-9-苯基-9H-咔唑、4,4,8,8,12,12-六(p-甲苯基)-4H-8H-12H-12C-氮雜二苯并[cd,mn]芘、4,7-二(9H-咔唑-9-基)-1,10-啡啉、2,2’-雙(4-(咔唑-9-基)苯基)聯苯、2,8-雙(二苯基磷氧基)二苯并[b,d]噻吩、雙(2-甲基苯基)二苯基矽烷、雙[3,5-二(9H-咔唑-9-基)苯基]二苯基矽烷、3,6-雙(咔唑-9-基)-9-(2-乙基-己基)-9H-咔唑、3-(二苯基磷氧基)-9-(4-(二苯基磷氧基)苯基)-9H-咔唑、3,6-雙[(3,5-二苯基)苯基]-9-苯基咔唑等,亦可藉由與發光性摻雜物共蒸鍍形成發光層。 Examples of the material for forming the light-emitting layer include argon (8-hydroxyquinoline) aluminum (III) (Alq 3 ), bis(8-hydroxyquinoline) zinc (II) (Znq 2 ), and bis(2-methyl group). -8-hydroxyquinoline) (p-phenylphenolate) aluminum (III) (BAlq), 4,4'-bis(2,2-diphenylvinyl)biphenyl, 9,10-di(naphthalene) -2-yl)anthracene, 2-t-butyl-9,10-di(naphthalen-2-yl)anthracene, 2,7-bis[9,9-bis(4-methylphenyl)-indole- 2-yl]-9,9-bis(4-methylphenyl)anthracene, 2-methyl-9,10-bis(naphthalen-2-yl)anthracene, 2-(9,9-helical biguanide- 2-yl)-9,9-helical biguanide, 2,7-bis(9,9-helical biguanide-2-yl)-9,9-helical biguanide, 2-[9,9-di(4) -methylphenyl)-indol-2-yl]-9,9-bis(4-methylphenyl)anthracene, 2,2'-dimercapto-9,9-helical biguanide, 1,3, 5-Shen(Indol-1-yl)benzene, 9,9-bis[4-(indenyl)phenyl]-9H-indole, 2,2'-bis(9,10-diphenylfluorene), 2 , 7-dimercapto-9,9-helical biguanide, 1,4-bis(indol-1-yl)benzene, 1,3-bis(indol-1-yl)benzene, 6,13-di(linked Phenyl-4-yl) pentacene, 3,9-di(naphthalen-2-yl)anthracene, 3,10-di(naphthalen-2-yl)anthracene, ginseng [4-(indolyl)-phenyl Amine, 10,10'-bis(biphenyl-4-yl)-9,9'-biguanide, N,N'-di(naphthalen-1-yl)-N,N'-diphenyl- [1,1':4',1":4",1'''-tetraphenyl]-4,4'''-diamine 4,4'-bis[10-(naphthalen-1-yl)fluoren-9-yl]biphenyl, dibenzo{[f,f']-4,4',7,7'-tetraphenyl} Di-[1,2,3-cd:1',2',3'-1m]苝, 1-(7-(9,9'-biguan-10-yl)-9,9-dimethyl 1,-9-(2-(9,9'-biguan-10-yl)-9,9-dihexyl-9H-indol-2-yl) oxime, 1, 3-bis(carbazol-9-yl)benzene, 1,3,5-gin (carbazol-9-yl)benzene, 4,4',4"-gin (carbazol-9-yl)triphenyl Amine, 4,4'-bis(carbazol-9-yl)biphenyl (CBP), 4,4'-bis(carbazol-9-yl)-2,2'-dimethylbiphenyl, 2 , 7-bis(carbazol-9-yl)-9,9-dimethylhydrazine, 2,2',7,7'-indole (carbazol-9-yl)-9,9-helical biguanide, 2,7-bis(carbazol-9-yl)-9,9-di(p-methylphenyl)anthracene, 9,9-bis[4-(carbazol-9-yl)-phenyl]indole, 2 , 7-bis(carbazol-9-yl)-9,9-helical biguanide, 1,4-bis(triphenyldecyl)benzene, 1,3-bis(triphenyldecyl)benzene, double (4-N,N-Diethylamino-2-methylphenyl)-4-methylphenylmethane, 2,7-bis(carbazol-9-yl)-9,9-dioctyl茀, 4,4"-bis(triphenyldecyl)-p-triphenyl, 4,4'-bis(triphenyldecyl)biphenyl, 9-(4-t-butylphenyl) -3,6-bis(triphenyldecyl)-9H-carbazole, 9-(4-t-butylphenyl)-3,6-trityl-9H-carbazole 9-(4-t-butylphenyl)-3,6-bis(9-(4-methoxyphenyl)-9H-indol-9-yl)-9H-carbazole, 2,6-double (3-(9H-carbazol-9-yl)phenyl)pyridine, triphenyl(4-(9-phenyl-9H-fluoren-9-yl)phenyl)decane, 9,9-dimethyl -N,N-diphenyl-7-(4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl)-9H-indol-2-amine, 3,5-double (3-(9H-carbazol-9-yl)phenyl)pyridine, 9,9-helopyridin-2-yl-diphenyl-phosphine oxide, 9,9'-(5-(triphenyl)矽alkyl)-1,3-phenylene)bis(9H-carbazole), 3-(2,7-bis(diphenylphosphino)-9-phenyl-9H-fluoren-9-yl) -9-phenyl-9H-carbazole, 4,4,8,8,12,12-hexa(p-tolyl)-4H-8H-12H-12C-azadibenzo[cd,mn]芘, 4,7-bis(9H-carbazol-9-yl)-1,10-morpholine, 2,2'-bis(4-(carbazol-9-yl)phenyl)biphenyl, 2,8 - bis(diphenylphosphino)dibenzo[b,d]thiophene, bis(2-methylphenyl)diphenylnonane, bis[3,5-di(9H-carbazole-9-yl) Phenyl]diphenylnonane, 3,6-bis(carbazol-9-yl)-9-(2-ethyl-hexyl)-9H-carbazole, 3-(diphenylphosphino)- 9-(4-(diphenylphosphino)phenyl)-9H-carbazole, 3,6-bis[(3,5-diphenyl)phenyl]-9-phenylcarbazole, etc. Co-evaporation with luminescent dopants Become a luminescent layer.

發光性摻雜物方面,可舉出3-(2-苯并噻唑基)-7-(二乙基胺基)香豆素、2,3,6,7-四氫-1,1,7,7-四甲基-1H,5H,11H-10-(2-苯并噻唑基)喹啉酮并[9,9a,1gh]香豆素、喹吖酮、N,N’-二甲基-喹吖酮、參(2-苯基吡啶)銥(III)(Ir(ppy)3)、雙(2-苯基吡啶)(乙醯丙酮酸)銥(III)(Ir(ppy)2(acac))、參[2-(p-甲苯基)吡啶]銥(III)(Ir(mppy)3)、9,10-雙[N,N-二(p-甲苯基)胺基]蒽、9,10-雙[苯基(m-甲苯基)胺基]蒽、雙[2-(2-羥基苯基)苯并噻唑]鋅(II)、N10,N10,N10,N10-四(p-甲 苯基)-9,9’-雙蒽-10,10’-二胺、N10,N10,N10,N10-四苯基-9,9’-雙蒽-10,10’-二胺、N10,N10-二苯基-N10,N10-二萘基-9,9’-雙蒽-10,10’-二胺、4,4’-雙(9-乙基-3-咔唑乙烯基)-1,1’-聯苯、苝、2,5,8,11-四-t-丁基苝、1,4-雙[2-(3-N-乙基咔唑基)乙烯基]苯、4,4’-雙[4-(二-p-甲苯基胺基)苯乙烯基]聯苯、4-(二-p-甲苯基胺基)-4’-[(二-p-甲苯基胺基)苯乙烯基]二苯乙烯、雙[3,5-二氟-2-(2-吡啶基)苯基-(2-羧基吡啶基)]銥(III)、4,4’-雙[4-(二苯基胺基)苯乙烯基]聯苯、雙(2,4-二氟苯基吡啶)肆(1-吡唑基)硼酸酯銥(III)、N,N’-雙(萘-2-基)-N,N’-雙(苯基)-參(9,9-二甲基亞茀基)、2,7-雙{2-[苯基(m-甲苯基)胺基]-9,9-二甲基-茀-7-基}-9,9-二甲基-茀、N-(4-((E)-2-(6((E)-4-(二苯基胺基)苯乙烯基)萘-2-基)乙烯基)苯基)-N-苯基苯胺、fac-銥(III)參(1-苯基-3-甲基苯咪唑啉-2-亞基-C,C2)、mer-銥(III)參(1-苯基-3-甲基苯咪唑啉-2-亞基-C,C2)、2,7-雙[4-(二苯基胺基)苯乙烯基]-9,9-螺旋雙茀、6-甲基-2-(4-(9-(4-(6-甲基苯并[d]噻唑-2-基)苯基)蒽-10-基)苯基)苯并[d]噻唑、1,4-二[4-(N,N-二苯基)胺基]苯乙烯基苯、1,4-雙(4-(9H-咔唑-9-基)苯乙烯基)苯、(E)-6-(4-(二苯基胺基)苯乙烯基)-N,N-二苯基萘-2-胺、雙(2,4-二氟苯基吡啶)(5-(吡啶-2-基)-1H-四唑)銥(III)、雙(3-三氟甲基-5-(2-吡啶基)吡唑)((2,4-二氟苯甲基)二苯基膦酸)銥(III)、雙(3-三氟甲基- 5-(2-吡啶基)吡唑)(苯甲基二苯基膦酸)銥(III)、雙(1-(2,4-二氟苯甲基)-3-甲基苯并咪唑鎓)(3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)銥(III)、雙(3-三氟甲基-5-(2-吡啶基)吡唑)(4’,6’-二氟苯基吡啶)銥(III)、雙(4’,6’-二氟苯基吡啶)(3,5-雙(三氟甲基)-2-(2’-吡啶基)吡咯)銥(III)、雙(4’,6’-二氟苯基吡啶)(3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)銥(III)、(Z)-6-均三甲苯基-N-(6-均三甲苯基喹啉-2(1H)-亞基)喹啉-2-胺-BF2、(E)-2-(2-(4-(二甲基胺基)苯乙烯基)-6-甲基-4H-吡喃-4-亞基)丙二腈、4-(二氰基亞甲基)-2-甲基-6-久洛尼啶-9-烯基-4H-吡喃、4-(二氰基亞甲基)-2-甲基-6-(1,1,7,7-四甲基久洛尼啶-9-烯基)-4H-吡喃、4-(二氰基亞甲基)-2-t-丁基-6-(1,1,7,7-四甲基久洛尼啶-4-基-乙烯基)-4H-吡喃、參(二苯甲醯基甲烷)啡啉銪(III)、5,6,11,12-四苯基并四苯、雙(2-苯并[b]噻吩-2-基-吡啶)(乙醯丙酮酸)銥(III)、參(1-苯基異喹啉)銥(III)、雙(1-苯基異喹啉)(乙醯丙酮酸)銥(III)、雙[1-(9,9-二甲基-9H-茀-2-基)-異喹啉](乙醯丙酮酸)銥(III)、雙[2-(9,9-二甲基-9H-茀-2-基)喹啉](乙醯丙酮酸)銥(III)、參[4,4’-二-t-丁基-(2,2’)-二吡啶]釕(III)‧雙(六氟膦酸鹽)、參(2-苯基喹啉)銥(III)、雙(2-苯基喹啉)(乙醯丙酮酸)銥(III)、2,8-二-t-丁基-5,11-雙(4-t-丁基苯基)-6,12-二苯基稠四苯、雙(2-苯基苯并噻唑) (乙醯丙酮酸)銥(III)、5,10,15,20-四苯基四苯并卟啉鉑、鋨(II)雙(3-三氟甲基-5-(2-吡啶)-吡唑)二甲基苯基膦、鋨(II)雙(3-(三氟甲基)-5-(4-t-丁基吡啶基)-1,2,4-三唑)二苯基甲基膦、鋨(II)雙(3-(三氟甲基)-5-(2-吡啶基)-1,2,4-三唑)二甲基苯基膦、鋨(II)雙(3-(三氟甲基)-5-(4-t-丁基吡啶基)-1,2,4-三唑)二甲基苯基膦、雙[2-(4-n-己基苯基)喹啉](乙醯丙酮酸)銥(III)、參[2-(4-n-己基苯基)喹啉]銥(III)、參[2-苯基-4-甲基喹啉]銥(III)、雙(2-苯基喹啉)(2-(3-甲基苯基)吡啶)銥(III)、雙(2-(9,9-二乙基-茀-2-基)-1-苯基-1H-苯并[d]咪唑)(乙醯丙酮酸)銥(III)、雙(2-苯基吡啶)(3-(吡啶-2-基)-2H-克唏-2-酮酸)銥(III)、雙(2-苯基喹啉)(2,2,6,6-四甲基庚烷-3,5-二酮酸)銥(III)、雙(苯基異喹啉)(2,2,6,6-四甲基庚烷-3,5-二酮酸)銥(III)、銥(III)雙(4-苯基噻吩并[3,2-c]吡啶并-N,C2)乙醯丙酮酸鹽、(E)-2-(2-t-丁基-6-(2-(2,6,6-三甲基-2,4,5,6-四氫-1H-吡咯并[3,2,1-ij]喹啉-8-基)乙烯基)-4H-吡喃-4-亞基)丙二腈、雙(3-三氟甲基-5-(1-異喹啉基)吡唑)(甲基二苯基膦)釕、雙[(4-n-己基苯基)異喹啉](乙醯丙酮酸)銥(III)、鉑(II)八乙基卟吩、雙(2-甲基二苯并[f,h]喹噁啉)(乙醯丙酮酸)銥(III)、參[(4-n-己基苯基)異喹啉]銥(III)等。 Examples of the luminescent dopant include 3-(2-benzothiazolyl)-7-(diethylamino)coumarin, 2,3,6,7-tetrahydro-1,1,7 ,7-Tetramethyl-1H,5H,11H-10-(2-benzothiazolyl)quinolinone [9,9a,1gh]coumarin,quinaline, N,N'-dimethyl -Quinone, quinone (2-phenylpyridine) ruthenium (III) (Ir (ppy) 3 ), bis (2-phenylpyridine) (acetyl acetonate) ruthenium (III) (Ir (ppy) 2 ( Acac)), ginseng [2-(p-tolyl)pyridine] ruthenium (III) (Ir(mppy) 3 ), 9,10-bis[N,N-bis(p-tolyl)amino] oxime, 9,10-bis[phenyl(m-tolyl)amino]indole, bis[2-(2-hydroxyphenyl)benzothiazole]zinc(II), N 10 , N 10 , N 10 , N 10 -tetrakis(p-tolyl)-9,9'-biguanide-10,10'-diamine, N 10 ,N 10 ,N 10 ,N 10 -tetraphenyl-9,9'-biguanide-10 , 10'-diamine, N 10 , N 10 -diphenyl-N 10 , N 10 -dinaphthyl-9,9'-biguanide-10,10'-diamine, 4,4'-double ( 9-ethyl-3-carbazolevinyl)-1,1'-biphenyl, anthracene, 2,5,8,11-tetra-t-butylindole, 1,4-bis[2-(3- N-ethylcarbazolyl)vinyl]benzene, 4,4'-bis[4-(di-p-tolylamino)styrene]biphenyl, 4-(di-p-tolylamino) -4'-[(di-p-tolylamino)styryl]stilbene, bis[3,5-difluoro-2- (2-pyridyl)phenyl-(2-carboxypyridinyl)]ruthenium (III), 4,4'-bis[4-(diphenylamino)styryl]biphenyl, bis(2,4 -difluorophenylpyridine)indole (1-pyrazolyl)borate ruthenium(III), N,N'-bis(naphthalen-2-yl)-N,N'-bis(phenyl)-para 9,9-dimethylindenyl), 2,7-bis{2-[phenyl(m-tolyl)amino]-9,9-dimethyl-indol-7-yl}-9, 9-Dimethyl-indole, N-(4-((E)-2-(6((E)-4-(diphenylamino))styryl))-naphthalen-2-yl)vinyl)benzene -N-phenylaniline, fac-铱(III) ginseng (1-phenyl-3-methylbenzimidazolyl-2-ylidene-C,C 2 ), mer-铱(III) ginseng (1) -Phenyl-3-methylbenzimidazolyl-2-ylidene-C,C 2 ), 2,7-bis[4-(diphenylamino)styryl]-9,9-helical biguanide ,6-methyl-2-(4-(9-(4-(6-methylbenzo[d]thiazol-2-yl)phenyl)indole-10-yl)phenyl)benzo[d] Thiazole, 1,4-bis[4-(N,N-diphenyl)amino]styrylbenzene, 1,4-bis(4-(9H-carbazol-9-yl)styryl)benzene , (E)-6-(4-(diphenylamino)styryl)-N,N-diphenylnaphthalen-2-amine, bis(2,4-difluorophenylpyridine) (5- (pyridin-2-yl)-1H-tetrazole) ruthenium (III), bis(3-trifluoromethyl-5-(2-pyridyl)pyrazole) ((2,4-difluorobenzyl) Diphenylphosphonic acid) Ruthenium (III), bis(3-trifluoromethyl-5-(2-pyridyl)pyrazole) (benzyldiphenylphosphonic acid) ruthenium (III), bis(1-(2,4-di) Fluorobenzyl)-3-methylbenzimidazole oxime)(3-(trifluoromethyl)-5-(2-pyridyl)-1,2,4-triazole) ruthenium (III), bis ( 3-trifluoromethyl-5-(2-pyridyl)pyrazole) (4',6'-difluorophenylpyridine) ruthenium (III), bis(4',6'-difluorophenylpyridine) (3,5-bis(trifluoromethyl)-2-(2'-pyridyl)pyrrole) ruthenium (III), bis(4',6'-difluorophenylpyridine) (3-(trifluoromethyl) 5-(2-pyridyl)-1,2,4-triazole) ruthenium (III), (Z)-6-mesityl-N-(6-mesitylquinoline-2 (1H)-ylidenequinolin-2-amine-BF 2 , (E)-2-(2-(4-(dimethylamino)styryl)-6-methyl-4H-pyran -4-subunit)malononitrile, 4-(dicyanomethylidene)-2-methyl-6-julonidine-9-alkenyl-4H-pyran, 4-(dicyano) Methyl)-2-methyl-6-(1,1,7,7-tetramethyljulonidine-9-alkenyl)-4H-pyran, 4-(dicyanomethylidene)- 2-t-butyl-6-(1,1,7,7-tetramethyljuronidin-4-yl-vinyl)-4H-pyran, ginseng (diphenylmercaptomethane) phenanthroline铕(III), 5,6,11,12-tetraphenyltetracene, bis(2-benzo[b]thiophen-2-yl-pyridine)(acetylpyruvate) ruthenium (II) I), ginseng (1-phenylisoquinoline) ruthenium (III), bis(1-phenylisoquinoline) (acetylpyruvate) ruthenium (III), bis[1-(9,9-dimethyl -9H-indol-2-yl)-isoquinoline](acetylpyruvate)ruthenium(III), bis[2-(9,9-dimethyl-9H-indol-2-yl)quinoline] (acetyl acetonate) ruthenium (III), ginseng [4,4'-di-t-butyl-(2,2')-dipyridyl] ruthenium (III) ‧ bis (hexafluorophosphonate), ginseng (2-phenylquinoline) ruthenium (III), bis(2-phenylquinoline) (acetylacetonate) ruthenium (III), 2,8-di-t-butyl-5,11-bis ( 4-t-butylphenyl)-6,12-diphenyl fused tetraphenyl, bis(2-phenylbenzothiazole) (acetylacetonate) ruthenium (III), 5,10,15,20- Tetraphenyltetrabenzoporphyrin platinum, ruthenium (II) bis(3-trifluoromethyl-5-(2-pyridine)-pyrazole) dimethylphenylphosphine, ruthenium (II) bis (3-( Trifluoromethyl)-5-(4-t-butylpyridyl)-1,2,4-triazole)diphenylmethylphosphine, ruthenium (II) bis(3-(trifluoromethyl)- 5-(2-pyridyl)-1,2,4-triazole)dimethylphenylphosphine, ruthenium (II) bis(3-(trifluoromethyl)-5-(4-t-butylpyridine) 1,1,2,4-triazole) dimethylphenylphosphine, bis[2-(4-n-hexylphenyl)quinoline](acetylpyruvate) ruthenium (III), ginseng [2- (4-n-hexylphenyl)quinoline] ruthenium (III), ginseng [2-phenyl-4-methylquinoline] ruthenium (III) Bis(2-phenylquinoline)(2-(3-methylphenyl)pyridine)ruthenium(III), bis(2-(9,9-diethyl-indol-2-yl)-1-benzene -1-1H-benzo[d]imidazole)(acetyl acetonate) ruthenium (III), bis(2-phenylpyridine)(3-(pyridin-2-yl)-2H-g 唏-2-keto acid铱(III), bis(2-phenylquinoline)(2,2,6,6-tetramethylheptane-3,5-dione acid) ruthenium (III), bis(phenylisoquinoline) (2,2,6,6-tetramethylheptane-3,5-dione acid) ruthenium (III), ruthenium (III) bis(4-phenylthieno[3,2-c]pyridine -N,C 2 ) acetoacetate, (E)-2-(2-t-butyl-6-(2-(2,6,6-trimethyl-2,4,5,6-) Tetrahydro-1H-pyrrolo[3,2,1-ij]quinolin-8-yl)vinyl)-4H-pyran-4-ylidene)malononitrile, bis(3-trifluoromethyl- 5-(1-isoquinolinyl)pyrazole)(methyldiphenylphosphine)ruthenium, bis[(4-n-hexylphenyl)isoquinoline](acetylpyruvate)ruthenium(III), platinum (II) octaethyl porphin, bis(2-methyldibenzo[f,h]quinoxaline) (acetylpyruvate) ruthenium (III), ginseng [(4-n-hexylphenyl) Quinoline] ruthenium (III) and the like.

形成電子輸送層/電洞阻礙層之材料方面,可 舉出8-羥基喹啉-鋰、2,2’,2”-(1,3,5-石油醚甲苯基)-參(1-苯基-1-H-苯并咪唑)、2-(4-聯苯基)5-(4-t-丁基苯基)-1,3,4-噁二唑、2,9-二甲基-4,7-二苯基-1,10-啡啉、4,7-二苯基-1,10-啡啉、雙(2-甲基-8-喹啉)-4-(苯基酚)鋁、1,3-雙[2-(2,2’-二吡啶-6-基)-1,3,4-氧雜二唑-5-基]苯、6,6’-雙[5-(聯苯基-4-基)-1,3,4-氧雜二唑-2-基]-2,2’-二吡啶、3-(4-聯苯基)-4-苯基-5-t-丁基苯基-1,2,4-三唑、4-(萘-1-基)-3,5-二苯基-4H-1,2,4-三唑、2,9-雙(萘-2-基)-4,7-二苯基-1,10-啡啉、2,7-雙[2-(2,2’-二吡啶-6-基)-1,3,4-氧雜二唑-5-基]-9,9-二甲基茀、1,3-雙[2-(4-t-丁基苯基)-1,3,4-氧雜二唑-5-基]苯、參(2,4,6-三甲基-3-(吡啶-3-基)苯基)硼烷、1-甲基-2-(4-(萘-2-基)苯基)-1H-咪唑[4,5f][1,10]啡啉、2-(萘-2-基)-4,7-二苯基-1,10-啡啉、苯基-二芘基膦氧化物、3,3’,5,5’-四[(m-吡啶基)-苯-3-基]聯苯、1,3,5-參[(3-吡啶基)-苯-3-基]苯、4,4’-雙(4,6-二苯基-1,3,5-三嗪-2-基)聯苯、1,3-雙[3,5-二(吡啶-3-基)苯基]苯、雙(10-羥基苯并[h]喹啉)鈹、二苯基雙(4-(吡啶-3-基)苯基)矽烷、3,5-二(芘-1-基)吡啶等。 Forming the material of the electron transport layer/hole blocking layer, For example, 8-hydroxyquinoline-lithium, 2,2',2"-(1,3,5-petroleum ethertolyl)-parade (1-phenyl-1-H-benzimidazole), 2-( 4-biphenyl) 5-(4-t-butylphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-morphine Porphyrin, 4,7-diphenyl-1,10-morpholine, bis(2-methyl-8-quinolinyl)-4-(phenylphenol)aluminum, 1,3-bis[2-(2, 2'-Dipyridyl-6-yl)-1,3,4-oxadiazole-5-yl]benzene, 6,6'-bis[5-(biphenyl-4-yl)-1,3 , 4-oxadiazole-2-yl]-2,2'-dipyridine, 3-(4-biphenyl)-4-phenyl-5-t-butylphenyl-1,2,4 -Triazole, 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole, 2,9-bis(naphthalen-2-yl)-4,7- Diphenyl-1,10-morpholine, 2,7-bis[2-(2,2'-dipyridin-6-yl)-1,3,4-oxadiazole-5-yl]-9 , 9-dimethylhydrazine, 1,3-bis[2-(4-t-butylphenyl)-1,3,4-oxadiazole-5-yl]benzene, ginseng (2,4, 6-trimethyl-3-(pyridin-3-yl)phenyl)borane, 1-methyl-2-(4-(naphthalen-2-yl)phenyl)-1H-imidazole [4,5f] [1,10] phenanthroline, 2-(naphthalen-2-yl)-4,7-diphenyl-1,10-morpholine, phenyl-dimercaptophosphine oxide, 3,3',5, 5'-tetrakis[(m-pyridyl)-phenyl-3-yl]biphenyl, 1,3,5-gin[(3-pyridyl)-phenyl-3-yl]benzene, 4,4'-double (4,6-diphenyl -1,3,5-triazin-2-yl)biphenyl, 1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene, bis(10-hydroxybenzo[h] Quinoline) oxime, diphenylbis(4-(pyridin-3-yl)phenyl)decane, 3,5-di(indol-1-yl)pyridine, and the like.

形成電子注入層之材料方面,可舉出酸化鋰(Li2O)、酸化鎂(MgO)、氧化鋁(Al2O3)、氟化鋰(LiF)、氟化鈉(NaF)、氟化鎂(MgF2)、氟化銫(CsF)、氟化鍶(SrF2)、三酸化鉬(MoO3)、鋁、Li(acac)、乙酸鋰、安息香酸鋰等。 Examples of the material for forming the electron injecting layer include lithium acid phosphate (Li 2 O), magnesium acid oxide (MgO), aluminum oxide (Al 2 O 3 ), lithium fluoride (LiF), sodium fluoride (NaF), and fluorination. Magnesium (MgF 2 ), cesium fluoride (CsF), strontium fluoride (SrF 2 ), molybdenum trioxide (MoO 3 ), aluminum, Li (acac), lithium acetate, lithium benzoate, and the like.

陰極材料方面,可舉出鋁、鎂-銀合金、鋁-鋰合金、鋰、鈉、鉀、銫等。 Examples of the cathode material include aluminum, a magnesium-silver alloy, an aluminum-lithium alloy, lithium, sodium, potassium, rubidium, and the like.

形成電子阻礙層之材料方面,可舉出參(苯基吡唑)銥等。 Examples of the material for forming the electron blocking layer include ginseng (phenylpyrazole) oxime and the like.

使用本發明之電荷輸送性塗漆的PLED元件之製作方法雖未特別限定,但可舉出以下的方法。 The method for producing the PLED element using the charge transporting paint of the present invention is not particularly limited, and the following methods can be mentioned.

上述OLED元件製作中,取代電洞輸送層、發光層、電子輸送層、電子注入層之真空蒸鍍操作,係以藉由依序形成電洞輸送性高分子層、發光性高分子層,來製作具有以本發明之電荷輸送性塗漆所形成之電荷輸送性薄膜的PLED元件。 In the above-described OLED device fabrication, a vacuum vapor deposition operation in place of the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer is performed by sequentially forming a hole transporting polymer layer or a light-emitting polymer layer. A PLED element having a charge transporting film formed by the charge transporting paint of the present invention.

具體而言,係於陽極基板上塗佈本發明之電荷輸送性塗漆,藉由上述之方法來製作電洞注入層,並於其上依序形成電洞輸送性高分子層、發光性高分子層,進一步將陰極電極予以蒸鍍而為PLED元件。 Specifically, the charge transporting paint of the present invention is applied onto an anode substrate, and a hole injection layer is formed by the above method, and a hole transporting polymer layer is sequentially formed thereon, and the luminescent property is high. In the molecular layer, the cathode electrode is further vapor-deposited to form a PLED element.

使用之陰極及陽極材料方面,可使用與上述OLED元件製作時同樣者,可進行同樣的洗淨處理、表面處理。 As for the cathode and anode materials to be used, the same cleaning treatment and surface treatment can be carried out in the same manner as in the production of the above OLED element.

電洞輸送性高分子層及發光性高分子層之形成法方面,可舉出在電洞輸送性高分子材料或發光性高分子材料或是於此等之中已加入摻雜物所成的材料中,加入溶劑而溶解,使其均一地分散,塗佈於電洞注入層或電洞輸送性高分子層之上後,各自燒成而成膜之方法。 In the method of forming the hole transporting polymer layer and the light-emitting polymer layer, a hole-transporting polymer material or a light-emitting polymer material or a dopant is added thereto. In the material, a solvent is added and dissolved, and the film is uniformly dispersed and applied to a hole injection layer or a hole transporting polymer layer, and then each is fired into a film.

電洞輸送性高分子材料方面,可舉出聚 [(9,9-二己基茀基-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,4-二胺基伸苯基)]、聚[(9,9-二辛基茀基-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,1’-伸聯苯基-4,4-二胺)]、聚[(9,9-雙{1’-戊烯-5’-基}茀基-2,7-二基)-co-(N,N’-雙{p-丁基苯基}-1,4-二胺基伸苯基)]、聚[N,N’-雙(4-丁基苯基)-N,N’-雙(苯基)-聯苯胺]-封端聚半矽氧烷、聚[(9,9-二辛基茀基-2,7-二基)-co-(4,4’-(N-(p-丁基苯基))二苯基胺)]等。 In the case of hole transporting polymer materials, [(9,9-Dihexylfluorenyl-2,7-diyl)-co-(N,N'-bis{p-butylphenyl}-1,4-diaminophenyl)], poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(N,N'-bis{p-butylphenyl}-1,1'-extended biphenyl-4, 4-diamine)], poly[(9,9-bis{1'-penten-5'-yl}fluorenyl-2,7-diyl)-co-(N,N'-double{p- Butylphenyl}-1,4-diaminophenyl)], poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine]- Blocked polysulfonium oxide, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))) Phenylamine)].

發光性高分子材料方面,可舉出聚(9,9-二烷基茀)(PDAF)等之聚茀衍生物、聚(2-甲氧基-5-(2’-乙基己氧基)-1,4-伸苯基伸乙烯基)(MEH-PPV)等之聚伸苯基伸乙烯基衍生物、聚(3-烷基噻吩)(PAT)等之聚噻吩衍生物、聚乙烯基咔唑(PVCz)等。 Examples of the luminescent polymer material include a polyfluorene derivative such as poly(9,9-dialkylfluorene) (PDAF), and poly(2-methoxy-5-(2'-ethylhexyloxy). a polyphenylene derivative such as a poly(phenylene vinylene) derivative such as 1,4-1,4-phenylene vinylene (MEH-PPV), or a polythiophene derivative such as poly(3-alkylthiophene) (PAT) or a polyvinyl hydrazine. Oxazole (PVCz) and the like.

溶劑方面,可舉出甲苯、二甲苯、氯仿等,溶解或均一分散法方面,可舉出攪拌、加熱攪拌、超音波分散等之方法。 Examples of the solvent include toluene, xylene, and chloroform. Examples of the dissolution or the uniform dispersion method include stirring, heating and stirring, and ultrasonic dispersion.

塗佈方法方面,並無特別限定,可舉出噴墨法、噴霧法、浸漬法、旋轉塗佈法、轉錄印刷法、輥筒塗佈法、刷毛塗佈等。此外,塗佈係於氮、氬等之惰性氣體下進行為佳。 The coating method is not particularly limited, and examples thereof include an inkjet method, a spray method, a dipping method, a spin coating method, a transcription printing method, a roll coating method, and a brush coating. Further, it is preferred that the coating be carried out under an inert gas such as nitrogen or argon.

燒成之方法方面,可舉出於惰性氣體下或真空中,以烘箱或加熱板加熱之方法。 The method of firing may be carried out by an oven or a heating plate under an inert gas or in a vacuum.

此外,不只是由上述電荷輸送性塗漆所得之電荷輸送性薄膜,由本發明之噻吩衍生物所得之蒸鍍膜也 在電荷輸送性上表現優異,亦可依用途來使用以蒸鍍法所得之電荷輸送性薄膜。 Further, not only the charge transporting film obtained by the above charge transporting paint, but also the vapor deposited film obtained from the thiophene derivative of the present invention It is excellent in charge transportability, and a charge transporting film obtained by a vapor deposition method can also be used depending on the application.

〔實施例〕 [Examples]

以下,列舉合成例、實施例及比較例以更具體地說明本發明,但本發明並不受限於下述之實施例。此外,使用的裝置如下所示。 Hereinafter, the present invention will be more specifically described by way of Synthesis Examples, Examples and Comparative Examples, but the present invention is not limited to the examples described below. In addition, the device used is as follows.

(1)液體層析:Agilent Technologies公司製、Agilent 1260 Infinity Binary LC系統 (1) Liquid chromatography: Agilent 1260 Infinity Binary LC system manufactured by Agilent Technologies

(2)NMR:日本電子股份公司製、JNM-ECP300 FT NMR SYSTEM (2) NMR: manufactured by Nippon Electronics Co., Ltd., JNM-ECP300 FT NMR SYSTEM

(3)基板洗淨:長州產業(股)製、基板洗淨裝置(減壓電漿方式) (3) Washing of the substrate: Changzhou Industry (stock) system, substrate cleaning device (reduced pressure plasma method)

(4)塗漆的塗佈:Mikasa(股)製、旋轉塗佈機MS-A100 (4) Coating of paint: Mikasa (sand), rotary coater MS-A100

(5)膜厚測定:(股)小坂研究所製、微細形狀測定機Surf coder ET-4000 (5) Measurement of film thickness: (s) 坂 坂 坂 Institute, fine shape measuring machine Surf coder ET-4000

(6)EL元件之製作:長州產業(股)製、多機能蒸鍍裝置系統C-E2L1G1-N (6) Production of EL components: Changzhou Industry (stock) system, multi-function evaporation equipment system C-E2L1G1-N

(7)EL元件的亮度等之測定:(有)TECH WORLD製、I-V-L測定系統 (7) Measurement of brightness of EL element, etc.: (a) TECH WORLD system, I-V-L measurement system

(8)EL元件的壽命測定:(股)EHC製、有機EL亮度壽命評價系統PEL-105S (8) Measurement of life of EL element: (share) EHC system, organic EL brightness life evaluation system PEL-105S

〔1〕化合物之合成 [1] Synthesis of compounds 〔合成例1〕 [Synthesis Example 1]

基於下述反應式,合成3-甲氧基-2-(三-n-丁基錫烷基)噻吩(9)。 3-methoxy-2-(tri-n-butylstannyl)thiophene (9) was synthesized based on the following reaction formula.

於燒瓶內置入3-甲氧基噻吩(8)5.01g,施予氮氣取代。其中,置入二異丙基醚100mL冷卻至0℃,再於其中滴下n-丁基鋰之己烷溶液(濃度1.64M)29.5mL。滴下後,使溫度維持在0℃持續攪拌30分鐘,之後,滴下三-n-丁基錫烷基氯化物14.5mL,使溫度維持在0℃再繼續攪拌3小時。 5.01 g of 3-methoxythiophene (8) was placed in the flask, and nitrogen substitution was carried out. Among them, 100 mL of diisopropyl ether was placed and cooled to 0 ° C, and then 29.5 mL of a hexane solution (concentration: 1.64 M) of n-butyllithium was added thereto. After the dropwise addition, the temperature was maintained at 0 ° C and stirring was continued for 30 minutes. Thereafter, 14.5 mL of tri-n-butyltin alkyl chloride was added dropwise, and the temperature was maintained at 0 ° C and stirring was continued for further 3 hours.

攪拌後,減壓下餾去溶劑,於所得之殘渣中加入n-己烷,濾掉所生成的不溶物,再度實施溶劑之減壓餾去及乾燥,得到含3-甲氧基-2-(三-n-丁基錫烷基)噻吩之混合物。 After stirring, the solvent was evaporated under reduced pressure, and n-hexane was added to the residue, and the resulting insoluble material was filtered off, and the solvent was distilled off under reduced pressure and dried to give 3-methoxy-2-. A mixture of (tri-n-butylstannyl) thiophenes.

此混合物無須進一步純化,直接用來與之後步驟的化合物(10)進行反應。此外,使用1H-NMR及液體層析,確認混合物中的3-甲氧基-2-(三-n-丁基錫烷基)噻吩之含量為90.46%。 This mixture was used directly for the reaction with the compound (10) in the subsequent step without further purification. Further, using 1 H-NMR and liquid chromatography, it was confirmed that the content of 3-methoxy-2-(tri-n-butylstannyl)thiophene in the mixture was 90.46%.

〔實施例1〕 [Example 1]

藉由以下之方法合成噻吩衍生物(11)。 The thiophene derivative (11) was synthesized by the following method.

於燒瓶內,將2,3,4,5-四溴噻吩(10)(東京化成工業(股)製)0.5g與3-甲氧基-2-(三-n-丁基錫烷基)噻吩(9)2.7g(4.8當量、純度90.46%)置入反應容器中,進行氮氣取代。於其中,加入二甲苯10mL、Pd(PPh3)4 0.073g(5mol%),在加熱迴流條件下攪拌23小時,攪拌結束後,將反應液冷卻至室溫。 In the flask, 2,3,4,5-tetrabromothiophene (10) (manufactured by Tokyo Chemical Industry Co., Ltd.) was added with 0.5 g of 3-methoxy-2-(tri-n-butylstannyl)thiophene ( 9) 2.7 g (4.8 equivalents, purity 90.46%) was placed in a reaction vessel and replaced with nitrogen. Into the mixture, 10 mL of xylene and 0.073 g (5 mol%) of Pd(PPh 3 ) 4 were added, and the mixture was stirred under heating and reflux for 23 hours. After the completion of the stirring, the reaction mixture was cooled to room temperature.

於已冷卻的反應液中加入氯仿及離子交換水進行分液處理之後,將所得之有機層以離子交換水洗淨2次,接著,將其洗淨後之有機層以硫酸鈉予以乾燥之後,減壓下餾去溶劑。然後,於所得之殘渣中加入n-己烷予以漿料洗淨,過濾回收濾物。 After the liquid separation treatment was carried out by adding chloroform and ion-exchanged water to the cooled reaction solution, the obtained organic layer was washed twice with ion-exchanged water, and then the organic layer was washed with sodium sulfate and then dried. The solvent was distilled off under reduced pressure. Then, n-hexane was added to the obtained residue to wash the slurry, and the filtrate was collected by filtration.

之後,於燒瓶內,置入該濾物及甲苯5mL,在加熱迴流條件下攪拌濾物,確認溶解之後,將該溶液放冷至室溫為止。 Thereafter, the filtrate and 5 mL of toluene were placed in a flask, and the filtrate was stirred under reflux with heating, and after confirming dissolution, the solution was allowed to cool to room temperature.

放冷後,藉由過濾來回收析出物,進一步予以乾燥, 得到噻吩衍生物(11)(產量0.40g、產率60%)。1H-NMR之測定結果顯示如下。 After allowing to cool, the precipitate was collected by filtration and further dried to obtain a thiophene derivative (11) (yield: 0.40 g, yield: 60%). The measurement results of 1 H-NMR are shown below.

1H-NMR(300MHz,CDCl3)δ[ppm]:7.20(d,2H,J=6.0Hz),7.02(d,2H,J=6.0Hz),6.80(d,2H,J=5.4Hz),6.74(d,2H,J=5.4Hz),3.94(s,6H),3.64(s,6H). 1 H-NMR (300MHz, CDCl 3 ) δ [ppm]: 7.20 (d, 2H, J = 6.0 Hz), 7.02 (d, 2H, J = 6.0 Hz), 6.80 (d, 2H, J = 5.4 Hz) , 6.74 (d, 2H, J = 5.4 Hz), 3.94 (s, 6H), 3.64 (s, 6H).

〔2〕電荷輸送性塗漆的調製 [2] Modulation of charge transport paint 〔實施例2〕 [Example 2]

使噻吩衍生物(11)0.052g與磷鎢酸(關東化學(股)製)0.258g在氮氣氛圍下溶解於1,3-二甲基-2-四氫咪唑酮3.0g中。於所得之溶液中,加入五氟苯基三乙氧基矽烷0.009g予以攪拌,再於其中加入二乙二醇二甲基醚5.0g及丁二醇2g予以攪拌,調製電荷輸送性塗漆。 0.052 g of thiophene derivative (11) and 0.258 g of phosphotungstic acid (manufactured by Kanto Chemical Co., Ltd.) were dissolved in 3.0 g of 1,3-dimethyl-2-tetrazole imidazol under a nitrogen atmosphere. To the obtained solution, 0.009 g of pentafluorophenyltriethoxydecane was added and stirred, and then 5.0 g of diethylene glycol dimethyl ether and 2 g of butanediol were added thereto and stirred to prepare a charge transporting paint.

〔3〕有機EL元件的製造及特性評價 [3] Manufacture and evaluation of organic EL elements 〔實施例3〕 [Example 3]

將實施例2所得的塗漆使用旋轉塗佈機塗佈於ITO基板之後,在50℃乾燥5分鐘,再於大氣氛圍下,在230℃燒成10分鐘,於ITO基板上形成了30nm之均一薄膜。ITO基板方面,係使用有銦錫氧化物(ITO)於表面上以膜厚150nm成型化之25mm×25mm×0.7t的玻璃基板,並於使用前藉由O2電漿洗淨裝置(150W、30秒鐘)去除表面上之雜質。 The varnish obtained in Example 2 was applied onto an ITO substrate using a spin coater, and then dried at 50 ° C for 5 minutes, and then baked at 230 ° C for 10 minutes in an air atmosphere to form a uniformity of 30 nm on the ITO substrate. film. For the ITO substrate, a 25 mm × 25 mm × 0.7 t glass substrate having a thickness of 150 nm on the surface of indium tin oxide (ITO) was used, and an O 2 plasma cleaning device (150 W, before use) was used. 30 seconds) Remove impurities from the surface.

接著,對已形成薄膜之ITO基板,使用蒸鍍裝置(真 空度1.0×10-5Pa)依序積層α-NPD、Alq3、氟化鋰及鋁之薄膜,得到有機EL元件。此時,蒸鍍率係以α-NPD、Alq3及鋁為0.2nm/秒、氟化鋰為0.02nm/秒的條件下各自進行,使膜厚各自為30nm、40nm、0.5nm及120nm。 Next, a film of α-NPD, Alq 3 , lithium fluoride, and aluminum was sequentially laminated on the ITO substrate on which the thin film was formed by using a vapor deposition apparatus (vacuum degree: 1.0 × 10 -5 Pa) to obtain an organic EL device. At this time, the vapor deposition rate was carried out under conditions of α-NPD, Alq 3 and aluminum of 0.2 nm/sec, and lithium fluoride of 0.02 nm/sec, and the film thicknesses were 30 nm, 40 nm, 0.5 nm, and 120 nm, respectively.

此外,為了防止因空氣中的氧、水等之影響所致的特性劣化,有機EL元件以封止基板予以封止之後,評價其特性。封止係以下述程序進行。 Further, in order to prevent deterioration of characteristics due to the influence of oxygen, water, or the like in the air, the organic EL element was sealed with a sealing substrate, and its characteristics were evaluated. The sealing is carried out by the following procedure.

在氧濃度2ppm以下,露點-85℃以下之氮氣氛圍中,將有機EL元件收於封止基板之間,使封止基板藉由接著材(Nagase ChemteX(股)製、XNR5516Z-B1)予以貼合。此時,將捕水劑(Dynic(股)製、HD-071010W-40)與有機EL元件一起收於封止基板內。對已貼合的封止基板照射UV光(波長:365nm、照射量:6,000mJ/cm2)之後,於80℃進行1小時退火處理使接著材硬化。 In an atmosphere having a nitrogen concentration of 2 ppm or less and a dew point of -85 ° C or less, the organic EL device is placed between the sealing substrates, and the sealing substrate is attached by a laminate (Nagase ChemteX, XNR5516Z-B1). Hehe. At this time, a water-trapping agent (made by Dynic Co., Ltd., HD-071010W-40) was placed in the sealing substrate together with the organic EL element. After the sealed sealing substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6,000 mJ/cm 2 ), annealing treatment was performed at 80 ° C for 1 hour to cure the adhesive.

〔比較例1〕 [Comparative Example 1]

除了使用PEDOT/PSS(H.C.Starck公司製AI4083)來取代實施例2所得的塗漆,在150℃燒成30分鐘來取代在230℃燒成10分鐘以外,其餘係以與實施例3同樣的方法製作元件。 The same procedure as in Example 3 was carried out except that PEDOT/PSS (AI4083 manufactured by HC Starck Co., Ltd.) was used instead of the paint obtained in Example 2, and baked at 150 ° C for 30 minutes instead of firing at 230 ° C for 10 minutes. Make components.

進行所製作之元件的驅動電壓5V中之電流密度及亮度之測定以及耐久性試驗。將測定結果及亮度之半衰期(初期亮度5,000cd/m2)顯示於表1。 The measurement of the current density and brightness in the driving voltage of 5 V of the fabricated device and the durability test were performed. The measurement results and the half life of the luminance (initial luminance: 5,000 cd/m 2 ) are shown in Table 1.

如表1中所示,已知具有由本發明之塗漆所得之電洞注入層的有機EL元件(實施例3),相較於使用一般的電荷輸送性材料之PEDOT/PSS時(比較例1),乃具有顯著優異的耐久性。 As shown in Table 1, an organic EL element (Example 3) having a hole injection layer obtained by the paint of the present invention is known as compared with PEDOT/PSS using a general charge transporting material (Comparative Example 1) ), it has remarkable excellent durability.

Claims (12)

一種噻吩衍生物,其特徵係以下述式(1)所示者, (式中,R1~R4各自獨立地表示可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基;R5~R8各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、 可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基;又,R5~R8不為氫原子時,R1與R5、R2與R6、R3與R7及/或R4與R8可各自互相地鍵結形成2價之基;R9~R12各自獨立地表示氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基、可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基或可以Z2所取代之碳數6~20之芳基;Z1表示鹵素原子、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20之炔基硫代基、碳數6~20之芳基、碳數6~20之芳基氧基、碳數2~20之雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基;Z2表示鹵素原子、碳數1~20之烷基、碳數2~20之烯 基、碳數2~20之炔基、碳數1~20之烷氧基、碳數2~20之烯基氧基、碳數2~20之炔基氧基、碳數1~20之烷基硫代基、碳數2~20之烯基硫代基、碳數2~20之炔基硫代基、碳數6~20之芳基氧基、碳數2~20之雜芳基氧基、碳數6~20之芳基硫代基或碳數2~20之雜芳基硫代基)。 A thiophene derivative characterized by the following formula (1), (Wherein, R 1 ~ R 4 each independently represent Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the sum may be substituted with Z 1 carbon atoms of the alkenyl group having 2 to 20 may be substituted with Z 1 of carbon an alkynyl group having 2 to 20, the sum can be substituted with Z 1 carbon atoms of the alkoxy group having 1 to 20, Z may be substituted with the 1 to 20 carbon atoms, alkenyl of 2 group, Z may be substituted with a carbon number of 2 the ~ 20 alkynyl group, Z may be substituted with a carbon number of the alkylthio group of 1 to 20 may be substituted with Z 1 of alkenyl having 2 to 20 of the thio group, Z may be substituted with the 1 carbon atoms, alkynyl group having 2 to 20 of the thio group, Z may be replaced by 2 carbon atoms of the aryloxy group of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z 2 can be The substituted arylthio group having 6 to 20 carbon atoms or the heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 ; R 5 to R 8 each independently represent a hydrogen atom, and may be Z 1 the substituent having 1 to 20 carbon atoms of the alkyl group may be substituted with Z 1 of the carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with an alkynyl group of a carbon number of 2 to 20, Z may be substituted with a carbon number of 1 1 the ~ 20 alkoxy group, Z may be substituted with a carbon number of alkenyl group having 2 to 20, the Z can be substituted with the 1 to 20 carbon atoms, alkynyl of 2 group, Z 1 may be The substituted alkylthio group having a carbon number of 1 to 20, Z may be substituted with the 1 to 20 carbon atoms, alkenyl of 2-ylthio group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2-ylthio group , Z 2 can be substituted aryloxy group of a carbon number of 6 to 20, Z may be substituted with a carbon number of 2 hetero aryloxy group of 2 to 20, Z may be substituted with the 2 carbon atoms of the aryl group having 6 to 20 a thio group or a heteroarylthio group having 2 to 20 carbon atoms which may be substituted by Z 2 ; further, when R 5 to R 8 are not a hydrogen atom, R 1 and R 5 , R 2 and R 6 , R 3 And R 7 and/or R 4 and R 8 may each be bonded to each other to form a divalent group; and R 9 to R 12 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , Z 1 may be substituted with the carbon atoms of the alkenyl group having 2 to 20, Z may be substituted with an alkynyl group of a carbon number of 2 to 20 may be substituted with Z 1 of the carbon atoms of the alkoxy group having 1 to 20, Z 1 may be the the substituted alkenyl having 2 to 20 carbon atoms of the group, may be substituted with Z 1 of 2 to 20 carbon atoms of the alkynyl group, may be substituted with Z 1 of the alkylthio group having a carbon number of 1 to 20, Z may be 1 substituted alkenylthio group having 2 to 20 carbon atoms, alkynylthio group having 2 to 20 carbon atoms which may be substituted by Z 1 or an aryl group having 6 to 20 carbon atoms which may be substituted by Z 2 ; 1 represents a halogen atom, an alkoxy group having 1 to 20 carbon atoms, an alkenyloxy group having 2 to 20 carbon atoms, an alkynyloxy group having 2 to 20 carbon atoms, an alkylthio group having 1 to 20 carbon atoms, and carbon. 2 to 20 alkenylthio groups, 2 to 20 alkynylthio groups, 6 to 20 aryl groups, 6 to 20 aryloxy groups, carbon number 2 to 20 An aryloxy group, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms; Z 2 represents a halogen atom, an alkyl group having 1 to 20 carbon atoms, and a carbon number of 2 to 20 Alkenyl group, alkynyl group having 2 to 20 carbon atoms, alkoxy group having 1 to 20 carbon atoms, alkenyloxy group having 2 to 20 carbon atoms, alkynyloxy group having 2 to 20 carbon atoms, carbon number 1 to 20 Alkylthio group, alkenylthio group having 2 to 20 carbon atoms, alkynylthio group having 2 to 20 carbon atoms, aryloxy group having 6 to 20 carbon atoms, heteroaryl having 2 to 20 carbon atoms a baseoxy group, an arylthio group having 6 to 20 carbon atoms or a heteroarylthio group having 2 to 20 carbon atoms). 如請求項1記載之噻吩衍生物,其中,R1~R4各自獨立地為可以Z1所取代之碳數1~20之烷氧基、可以Z1所取代之碳數2~20之烯基氧基、可以Z1所取代之碳數2~20之炔基氧基、可以Z1所取代之碳數1~20之烷基硫代基、可以Z1所取代之碳數2~20之烯基硫代基、可以Z1所取代之碳數2~20之炔基硫代基、可以Z2所取代之碳數6~20之芳基氧基、可以Z2所取代之碳數2~20之雜芳基氧基、可以Z2所取代之碳數6~20之芳基硫代基或可以Z2所取代之碳數2~20之雜芳基硫代基。 The requested item 1 described thiophene derivative of thiophene, wherein, R 1 ~ R 4 each independently may be substituted with Z 1 of alkoxy having 1 to 20, the alkenyl may be substituted with Z 1 of the 2 to 20 carbon atoms group, Z may be substituted with the 1 to 20 carbon atoms, alkynyl of 2 group, Z may be substituted with a carbon number of the alkylthio group of 1 to 20 may be substituted with Z 1 of 2 to 20 carbon atoms the alkenyl thio group, Z 1 may be substituted with an alkynyl of 2 to 20 carbon atoms of the thio group, Z may be replaced by 2 carbon atoms of the aryloxy group of 6 to 20, Z may be substituted with a carbon number of 2 of 2 to 20 heteroaryl group, Z may be substituted with a carbon number of 2 arylthio group of 6 to 20, or Z may be substituted heteroaryl the two carbon atoms, arylthio groups of 2 to 20. 如請求項1或2記載之噻吩衍生物,其中,R5~R8各自獨立地為氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基、可以Z1所取代之碳數2~20之炔基或可以Z1所取代之碳數1~20之烷氧基。 Thiophene according to claim 1 or 2 of the thiophene derivative requested item, wherein, R 5 ~ R 8 are each independently a hydrogen atom, Z can be substituted with an alkyl group of 1 to 20 carbon atoms, the Z can be substituted with a carbon number of 2 alkenyl group of 20 ~, Z may be substituted with an alkynyl group of a carbon number of 2 to 20, or Z may be substituted with the alkoxy group having 1 carbon atoms of 1 to 20. 如請求項1~3中任1項記載之噻吩衍生物,其中,R9~R12各自獨立地為氫原子、可以Z1所取代之碳數1~20之烷基、可以Z1所取代之碳數2~20之烯基或可以Z1所取代之碳數2~20之炔基。 The thiophene derivative according to any one of claims 1 to 3, wherein R 9 to R 12 are each independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , and may be substituted by Z 1 The alkenyl group having 2 to 20 carbon atoms or the alkynyl group having 2 to 20 carbon atoms which may be substituted by Z 1 . 一種如請求項1記載之噻吩衍生物之製造方法, 其特徵係使下述式(2)所示之噻吩化合物與式(3)~(6)所示之三烷基錫烷基噻吩化合物在觸媒的存在下反應, (式中,Hal各自獨立地表示鹵素原子或擬鹵素基;Ra各自獨立地表示碳數1~20之烷基;R1~R12係與上述相同)。 A method for producing a thiophene derivative according to claim 1, wherein the thiophene compound represented by the following formula (2) and the trialkylstannylthiophene compound represented by the formula (3) to (6) are Reaction in the presence of a catalyst, (wherein Hal each independently represents a halogen atom or a pseudohalogen group; R a each independently represents an alkyl group having 1 to 20 carbon atoms; and R 1 to R 12 are the same as defined above). 一種電荷輸送性物質,其係由如請求項1~4中任1項記載之噻吩衍生物所成者。 A charge transporting substance obtained by the thiophene derivative according to any one of claims 1 to 4. 一種電荷輸送性塗漆,其係含如請求項1~4中任1項記載之噻吩衍生物、摻雜物及有機溶劑。 A charge transporting paint comprising the thiophene derivative, the dopant, and the organic solvent according to any one of claims 1 to 4. 一種電荷輸送性薄膜,其係使用如請求項7記載之電荷輸送性塗漆所製作者。 A charge transporting film produced by using the charge transporting paint described in claim 7. 一種電荷輸送性薄膜,其係含如請求項1~4中任1項記載之噻吩衍生物者。 A charge transporting film comprising the thiophene derivative according to any one of claims 1 to 4. 一種電子裝置,其係至少具備1層如請求項8或9記載之電荷輸送性薄膜者。 An electronic device comprising at least one layer of the charge transporting film described in claim 8 or 9. 一種有機電致發光元件,其係至少具備1層如請求項8或9記載之電荷輸送性薄膜者。 An organic electroluminescence device comprising at least one layer of the charge transporting film described in claim 8 or 9. 如請求項11記載之有機電致發光元件,其中,前述電荷輸送性薄膜為電洞注入層或電洞輸送層。 The organic electroluminescence device according to claim 11, wherein the charge transporting film is a hole injection layer or a hole transport layer.
TW103121013A 2013-06-18 2014-06-18 Thiophene derivative and utilization thereof and method for producing thiophene derivative TWI627169B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013127599 2013-06-18

Publications (2)

Publication Number Publication Date
TW201518297A true TW201518297A (en) 2015-05-16
TWI627169B TWI627169B (en) 2018-06-21

Family

ID=52104553

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103121013A TWI627169B (en) 2013-06-18 2014-06-18 Thiophene derivative and utilization thereof and method for producing thiophene derivative

Country Status (5)

Country Link
JP (1) JP6128213B2 (en)
KR (1) KR20160021181A (en)
CN (1) CN105324370B (en)
TW (1) TWI627169B (en)
WO (1) WO2014203818A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102543967B1 (en) * 2015-03-13 2023-06-15 닛산 가가쿠 가부시키가이샤 A composition for forming a charge-transporting thin film for organic electroluminescent devices, a charge-transporting thin film for organic electroluminescent devices, and an organic electroluminescent device
WO2016148184A1 (en) * 2015-03-17 2016-09-22 日産化学工業株式会社 Composition for forming hole collecting layer of photosensor element, and photosensor element
EP3608983A4 (en) * 2017-04-05 2021-01-13 Nissan Chemical Corporation Charge-transporting varnish
JP7351310B2 (en) * 2018-10-01 2023-09-27 コニカミノルタ株式会社 Mixed composition for organic electroluminescent devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107267A (en) * 1987-10-21 1989-04-25 Mitsui Toatsu Chem Inc Electrophotographic sensitive body
AU5843894A (en) * 1992-12-29 1994-07-19 Rijksuniversiteit Te Groningen Multi-bloc copolymer based tunable light emitting diode, polymers suitable therefor and oligomers
JP4883297B2 (en) 2004-08-31 2012-02-22 日産化学工業株式会社 Aryl sulfonic acid compounds and use as electron-accepting substances
US8906519B2 (en) 2006-09-13 2014-12-09 Nissan Chemical Industries, Ltd. Oligoaniline compounds
KR101557109B1 (en) 2007-04-12 2015-10-02 닛산 가가쿠 고교 가부시키 가이샤 Oligoaniline compound
WO2010058777A1 (en) 2008-11-19 2010-05-27 日産化学工業株式会社 Charge transporting material and charge transporting varnish
CN102219773A (en) * 2010-04-16 2011-10-19 中国科学院化学研究所 X-type two-dimensional or three-dimensional conjugated molecules based on oligomerized thiophene as well as preparation method and application thereof
CN102010399B (en) * 2010-11-11 2013-05-15 华东理工大学 Multiple thiophene group-containing photochromic compound

Also Published As

Publication number Publication date
TWI627169B (en) 2018-06-21
KR20160021181A (en) 2016-02-24
CN105324370B (en) 2018-09-18
JPWO2014203818A1 (en) 2017-02-23
WO2014203818A1 (en) 2014-12-24
CN105324370A (en) 2016-02-10
JP6128213B2 (en) 2017-05-17

Similar Documents

Publication Publication Date Title
TWI643913B (en) Charge transport varnish, charge transporting film and organic electroluminescent element
TWI704144B (en) Aniline derivatives and their uses
TWI821173B (en) Charge transport paint
TW201529537A (en) Charge-transporting varnish, charge-transporting thin film, organic electroluminescent device, and manufacturing method for charge-transporting thin film
TWI627169B (en) Thiophene derivative and utilization thereof and method for producing thiophene derivative
CN108884016B (en) Arylamine derivatives and use thereof
TWI659944B (en) Charge-transporting paint and its use
TWI632174B (en) Aniline oligomer derivative, charge transport coating and organic electroluminescent element
TWI626228B (en) Triphenylamine derivatives and their utilization
TWI660944B (en) Aniline derivatives and their uses
TWI627158B (en) Arylsulfonic acid compounds and their utilization
TW201716373A (en) Charge-transporting varnish and organic electroluminescent element
TW201619163A (en) Charge transport material
CN107428676B (en) Aniline derivative and use thereof
TWI659011B (en) Pyrene derivatives and their uses
TWI603946B (en) Aniline derivatives, charge-transporting varnishes and organic electroluminescent devices
TWI672284B (en) Aniline derivatives and their use
TWI646098B (en) Charge-transporting varnish, charge-transporting film, and organic electroluminescent device
TWI650385B (en) Charge transport varnish
TW201708225A (en) Composition for forming charge-transporting thin film for organic electroluminescent elements, charge-transporting thin film for organic electroluminescent elements, and organic electroluminescent element
TW201529571A (en) Charge-transporting varnish, charge-transporting thin film and organic electroluminescent device
TW201627272A (en) Charge-transporting varnish

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees