TW201513510A - Integrated circuit and operation system with protection function - Google Patents
Integrated circuit and operation system with protection function Download PDFInfo
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- TW201513510A TW201513510A TW102134237A TW102134237A TW201513510A TW 201513510 A TW201513510 A TW 201513510A TW 102134237 A TW102134237 A TW 102134237A TW 102134237 A TW102134237 A TW 102134237A TW 201513510 A TW201513510 A TW 201513510A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/025—Disconnection after limiting, e.g. when limiting is not sufficient or for facilitating disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/041—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature additionally responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/026—Current limitation using PTC resistors, i.e. resistors with a large positive temperature coefficient
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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Abstract
Description
本發明係有關於一種積體電路,特別是有關於一種可測量電流及具有過流或過溫保護的積體電路。 The present invention relates to an integrated circuit, and more particularly to an integrated circuit capable of measuring current and having overcurrent or overtemperature protection.
隨著半導體製程的進步,許多電路架構可被整合在一積體電路(integrated circuit;IC)之中。因此,電子產品的種類及功能愈來愈多,並且電子產品的體積不會隨著功能變多而變大。然而,由於電子產品的體積小,因此,電子產品內部的元件無法承受大電流。當電子產品內部的元件接收到過大的電流時,可能因而損壞。 As semiconductor processes advance, many circuit architectures can be integrated into an integrated circuit (IC). Therefore, the types and functions of electronic products are increasing, and the volume of electronic products does not become larger as functions become larger. However, due to the small size of electronic products, components inside electronic products cannot withstand large currents. When an element inside an electronic product receives an excessive current, it may be damaged.
本發明提供一種積體電路,根據一輸入電壓,產生一驅動信號予一負載,並包括一阻抗開關單元、一第一保護單元、一第一偵測單元以及一控制單元。阻抗開關單元根據一控制信號,將輸入電壓作為驅動信號。當流經阻抗開關單元的電流大於一預設電流時,第一保護單元產生一第一偵測信號。第一偵測單元偵測阻抗開關單元的電壓,用以產生一偵測結果。控制單元根據第一偵測信號,產生控制信號。 The invention provides an integrated circuit for generating a driving signal to a load according to an input voltage, and comprising an impedance switching unit, a first protection unit, a first detecting unit and a control unit. The impedance switch unit uses the input voltage as a drive signal according to a control signal. When the current flowing through the impedance switch unit is greater than a predetermined current, the first protection unit generates a first detection signal. The first detecting unit detects the voltage of the impedance switching unit to generate a detection result. The control unit generates a control signal according to the first detection signal.
本發明提供另一種積體電路,其根據一輸入電壓,產生一驅動信號予一負載,並包括一阻抗開關單元、一第一保 護單元、一第一偵測單元以及一控制單元。阻抗開關單元根據一控制信號,將輸入電壓作為驅動信號。第一保護單元偵測積體電路的內部溫度。當積體電路的內部溫度大於一預設溫度時,第一保護單元產生一第一偵測信號。第一偵測單元偵測阻抗開關單元的電壓,用以產生一偵測結果。控制單元根據第一偵測信號,產生控制信號。 The present invention provides another integrated circuit that generates a driving signal to a load according to an input voltage, and includes an impedance switching unit, a first protection a protection unit, a first detection unit and a control unit. The impedance switch unit uses the input voltage as a drive signal according to a control signal. The first protection unit detects the internal temperature of the integrated circuit. When the internal temperature of the integrated circuit is greater than a predetermined temperature, the first protection unit generates a first detection signal. The first detecting unit detects the voltage of the impedance switching unit to generate a detection result. The control unit generates a control signal according to the first detection signal.
為讓本發明之特徵和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下: In order to make the features and advantages of the present invention more comprehensible, the preferred embodiments are described below, and are described in detail with reference to the accompanying drawings.
100‧‧‧操作系統 100‧‧‧ operating system
110、120‧‧‧積體電路 110, 120‧‧‧ integrated circuits
130‧‧‧負載 130‧‧‧load
210A、210B‧‧‧阻抗開關單元 210A, 210B‧‧‧impedance switch unit
220、260‧‧‧保護單元 220, 260‧‧‧protection unit
230、270‧‧‧偵測單元 230, 270‧‧‧Detection unit
240‧‧‧控制單元 240‧‧‧Control unit
211‧‧‧阻抗單元 211‧‧‧impedance unit
212、234‧‧‧電晶體 212, 234‧‧‧Optoelectronics
221‧‧‧限流模組 221‧‧‧ Current limiting module
222‧‧‧突波保護模組 222‧‧‧ surge protection module
224‧‧‧抗尖峰脈衝電路 224‧‧‧Anti-spike circuit
250‧‧‧轉換單元 250‧‧‧Transfer unit
280‧‧‧禁能單元 280‧‧‧ disable unit
313、325‧‧‧熱感測裝置 313, 325‧‧‧ Thermal sensing device
314‧‧‧齊納二極體 314‧‧‧Zina diode
231、232、235、RDS、311、312、321~324‧‧‧電阻 231, 232, 235, R DS , 311, 312, 321~324‧‧‧ resistance
223、233、315、326‧‧‧比較器 223, 233, 315, 326‧‧ ‧ comparator
VIN‧‧‧輸入電壓 VIN‧‧‧ input voltage
SD‧‧‧驅動信號 S D ‧‧‧ drive signal
SC‧‧‧控制信號 S C ‧‧‧ control signal
EN‧‧‧外部致能信號 EN‧‧‧External enable signal
OC‧‧‧過流信號 OC‧‧‧Overcurrent signal
SS_OUT‧‧‧偵測結果 S S_OUT ‧‧‧Detection results
SCL‧‧‧時脈信號 SCL‧‧‧ clock signal
SDA‧‧‧資料信號 SDA‧‧‧ information signal
IS‧‧‧電流 I S ‧‧‧ Current
SDET1~SDET3‧‧‧偵測信號 S DET1 ~S DET3 ‧‧‧Detection signal
SSA‧‧‧轉換信號 S SA ‧‧‧ conversion signal
Vs、V1、Vcc‧‧‧電壓 Vs, V1, Vcc‧‧‧ voltage
Vref1~Vref4‧‧‧參考電壓 Vref1~Vref4‧‧‧reference voltage
GND‧‧‧接地位準 GND‧‧‧ Grounding level
第1圖為本發明之操作系統之一可能實施例。 Figure 1 is a possible embodiment of one of the operating systems of the present invention.
第2A及2B圖為本發明之積體電路的一可能實施例。 2A and 2B are diagrams showing a possible embodiment of the integrated circuit of the present invention.
第3A及3B圖為本發明之保護單元之一可能實施例。 3A and 3B are diagrams showing one possible embodiment of the protection unit of the present invention.
第1圖為本發明之操作系統之一可能實施例。如圖所示,操作系統100包括積體電路110、120以及一負載130。積體電路110接收並根據輸入電壓VIN,產生一驅動信號SD。負載130根據驅動信號SD而動作。在一可能實施例中,積體電路110具有一傳輸路徑(未顯示),用以傳送輸入電壓VIN,並將輸入電壓VIN作為驅動信號SD。 Figure 1 is a possible embodiment of one of the operating systems of the present invention. As shown, the operating system 100 includes integrated circuits 110, 120 and a load 130. The integrated circuit 110 receives and generates a drive signal S D according to the input voltage VIN. The load 130 operates in accordance with the drive signal S D . In a possible embodiment, the integrated circuit 110 has a transmission path (not shown) for transmitting the input voltage VIN and using the input voltage VIN as the drive signal S D .
在本實施例中,當傳輸路徑上的電流過大時,積體電路110停止提供驅動信號SD予負載130,以避免損壞負載130。另外,當積體電路110的傳輸路徑上的電流過大時,積體電路110輸出一過流信號OC予一外部裝置(未顯示)。 In the present embodiment, when the current on the transmission path is excessive, the integrated circuit 110 stops supplying the drive signal S D to the load 130 to avoid damaging the load 130. Further, when the current on the transmission path of the integrated circuit 110 is excessive, the integrated circuit 110 outputs an overcurrent signal OC to an external device (not shown).
在另一實施例中,積體電路110偵測傳輸路徑上的電流,並將偵測結果SS_OUT提供予一外部控制器,如積體電路120。在一可能實施例中,積體電路120根據偵測結果SS_OUT以及輸入電壓VIN,便可得知負載130的功率損耗。在本實施例中,偵測結果SS_OUT係為一電壓位準。 In another embodiment, the integrated circuit 110 detects the current on the transmission path and provides the detection result S S — OUT to an external controller, such as the integrated circuit 120. In a possible embodiment, the integrated circuit 120 can know the power loss of the load 130 according to the detection result S S_OUT and the input voltage VIN. In this embodiment, the detection result S S_OUT is a voltage level.
在另一可能實施例中,積體電路110根據偵測結果SS_OUT,產生一時脈信號SCL及一資料信號SDA,並根據一通訊協定(如I2C)提供時脈信號SCL及資料信號SDA予積體電路120,但並非用以限制本發明。本發明並不限定積體電路110與120之間的傳輸協定的種類。在本實施例中,偵測結果SS_OUT為類比信號,資料信號SDA為數位信號。在其它實施例中,積體電路110可根據偵測結果SS_OUT,產生一時脈信號及複數個資料信號,並根據特定的通訊協定提供時脈信號及該等資料信號予積體電路120。在其它實施例中,一外部裝置(未顯示)提供一致能信號EN,用以致能積體電路110。 In another possible embodiment, the integrated circuit 110 generates a clock signal SCL and a data signal SDA according to the detection result S S_OUT , and provides the clock signal SCL and the data signal SDA according to a communication protocol (such as I2C). Body circuit 120, but is not intended to limit the invention. The invention does not limit the type of transmission protocol between the integrated circuits 110 and 120. In this embodiment, the detection result S S_OUT is an analog signal, and the data signal SDA is a digital signal. In other embodiments, the integrated circuit 110 can generate a clock signal and a plurality of data signals according to the detection result S S_OUT , and provide the clock signal and the data signal to the integrated circuit 120 according to a specific communication protocol. In other embodiments, an external device (not shown) provides a consistent energy signal EN to enable the integrated circuit 110.
第2A圖為本發明之積體電路110的一可能實施例。如圖所示,積體電路110包括一阻抗開關單元210A、一保護單元220、一偵測單元230以及一控制單元240。阻抗開關單元210A提供一傳輸路徑,並根據一控制信號SC,將輸入電壓VIN作為驅動信號SD。 2A is a possible embodiment of the integrated circuit 110 of the present invention. As shown, the integrated circuit 110 includes an impedance switch unit 210A, a protection unit 220, a detection unit 230, and a control unit 240. The impedance switching unit 210A provides a transmission path and uses the input voltage VIN as the driving signal S D according to a control signal S C .
在本實施例中,阻抗開關單元210A包括一阻抗單元211及一電晶體212。本發明並不限定阻抗單元211的種類。在本實施例中,阻抗單元211係為一電阻。電晶體212接收控制信號SC,並串聯阻抗單元211。在本實施例中,電晶體212係為 一N型電晶體,但並非用以限制本發明。在其它實施例中,電晶體212可為一P型MOS電晶體。 In the embodiment, the impedance switch unit 210A includes an impedance unit 211 and a transistor 212. The invention does not limit the type of the impedance unit 211. In the present embodiment, the impedance unit 211 is a resistor. The transistor 212 receives the control signal S C and connects the impedance unit 211 in series. In the present embodiment, the transistor 212 is an N-type transistor, but is not intended to limit the invention. In other embodiments, the transistor 212 can be a P-type MOS transistor.
當流經阻抗開關單元210A的電流IS大於一預設電流時,保護單元220產生一偵測信號SDET1。控制單元240根據偵測信號SDET1,產生控制信號SC。在一可能實施例中,控制單元240透過控制信號SC,不導通電晶體212,用以停止提供驅動信號SD予負載130,進而保護阻抗單元211不因過載而被燒毀。在本實施例中,保護單元220具有一限流模組221,用以產生偵測信號SDET1。 When the current I S flowing through the impedance switch unit 210A is greater than a predetermined current, the protection unit 220 generates a detection signal S DET1 . The control unit 240 generates a control signal S C according to the detection signal S DET1 . In a possible embodiment, the control unit 240 transmits the control signal S C and does not conduct the crystal 212 to stop providing the driving signal S D to the load 130, thereby protecting the impedance unit 211 from being burnt due to overload. In this embodiment, the protection unit 220 has a current limiting module 221 for generating the detection signal S DET1 .
在另一可能實施例中,保護單元220更包括一突波(glitch)保護模組222。當流經阻抗開關單元210A的電流IS大於預設電流,並且持續達一預設時間時,突波保護模組220產生一偵測信號SDET2。控制單元240根據偵測信號SDET2,產生控制信號SC,用以不導通電晶體212,進而保護阻抗單元211不因過載而被燒毀。因此,積體電路110停止提供驅動信號SD予負載130。在本實施例中,突波保護模組220包括一比較器223以及一抗尖峰脈衝電路(deglitch circuit)224。 In another possible embodiment, the protection unit 220 further includes a glitch protection module 222. When the current I S flowing through the impedance switch unit 210A is greater than the preset current and continues for a predetermined time, the surge protection module 220 generates a detection signal S DET2 . The control unit 240 generates a control signal S C according to the detection signal S DET2 for not conducting the crystal 212, thereby protecting the impedance unit 211 from being burnt due to overload. Therefore, the integrated circuit 110 stops supplying the drive signal S D to the load 130. In this embodiment, the surge protection module 220 includes a comparator 223 and a deglitch circuit 224.
比較器223擷取流經阻抗開關單元210A的脈衝。抗尖峰脈衝電路224判斷流經阻抗開關單元210A的脈衝的持續時間是否大於一預設時間。若否,則忽略此脈衝。若流經阻抗開關單元210A的脈衝的持續時間達預設時間時,抗尖峰脈衝電路224產生偵測信號SDET2。 The comparator 223 draws a pulse that flows through the impedance switch unit 210A. The anti-spike circuit 224 determines whether the duration of the pulse flowing through the impedance switching unit 210A is greater than a predetermined time. If not, ignore this pulse. The anti-spike circuit 224 generates the detection signal S DET2 if the duration of the pulse flowing through the impedance switching unit 210A reaches a preset time.
偵測單元230偵測阻抗開關單元210A的電壓,用以產生一偵測結果SS_OUT。在本實施例中,偵測單元230偵測阻抗 單元211的一壓差,並根據壓差產生偵測結果SS_OUT。本發明並不限定偵測單元230的電路架構。在一可能實施例中,偵測單元230包括電阻231、232、一比較器233以及一電晶體234。 The detecting unit 230 detects the voltage of the impedance switching unit 210A for generating a detection result S S_OUT . In this embodiment, the detecting unit 230 detects a pressure difference of the impedance unit 211, and generates a detection result S S_OUT according to the pressure difference. The present invention does not limit the circuit architecture of the detecting unit 230. In a possible embodiment, the detecting unit 230 includes resistors 231, 232, a comparator 233, and a transistor 234.
如圖所示,電阻231耦接在阻抗單元211的一端與比較器233的非反相輸入端之間。電阻232耦接在阻抗單元211的另一端與比較器233的反相輸入端之間。電晶體234耦接電阻231,並根據比較器233的輸出信號,產生偵測結果SS_OUT。在本實施例中,電晶體234係為一npn電晶體,但並非用以限制本發明。在其它實施例中,電晶體234可為其它種類的電晶體。 As shown, the resistor 231 is coupled between one end of the impedance unit 211 and the non-inverting input of the comparator 233. The resistor 232 is coupled between the other end of the impedance unit 211 and the inverting input of the comparator 233. The transistor 234 is coupled to the resistor 231, and generates a detection result S S_OUT according to the output signal of the comparator 233. In the present embodiment, the transistor 234 is an npn transistor, but is not intended to limit the invention. In other embodiments, the transistor 234 can be other types of transistors.
在本實施例中,偵測結果SS_OUT=ISR211R235/R231,其中IS為流經阻抗單元211的電流、R211為阻抗單元211的阻抗值、R235為電阻235的阻抗值、R231為電阻231的阻抗值。由於偵測結果SS_OUT、R211、R235及R231為已知,因此,一外部積體電路(如120)可藉由計算,求得流經阻抗單元211的電流IS。 In this embodiment, the detection result S S_OUT = I S R 211 R 235 /R 231 , where I S is the current flowing through the impedance unit 211, R 211 is the impedance value of the impedance unit 211, and R 235 is the resistance 235 The impedance value and R 231 are the impedance values of the resistor 231. Since the detection results S S_OUT , R 211 , R 235 , and R 231 are known, an external integrated circuit (eg, 120) can calculate the current I S flowing through the impedance unit 211 by calculation.
在本實施例中,積體電路110更包括一轉換單元250。轉換單元250轉換偵測結果SS_OUT,用以產生一轉換信號SSA。控制單元240根據轉換信號SSA,產生資料信號SDA以及時脈信號SCL予一外部控制器,如積體電路120。在此例中,積體電路120可同時接收到類比格式的偵測結果SS_OUT,並根據時脈信號SCL接收數位格式的資料信號SDA,但並非用以限制本發明。本發明並不限定積體電路110係以何種傳輸協定與積體電路120進行溝通。在其它實施例中,積體電路110可根據偵測結果SS_OUT,產生一時脈信號及複數個資料信號,並根據特定的通訊協定提供時脈信號及該等資料信號予積體電路120。 In the embodiment, the integrated circuit 110 further includes a conversion unit 250. The converting unit 250 converts the detection result S S_OUT for generating a conversion signal S SA . The control unit 240 generates the data signal SDA and the clock signal SCL to an external controller, such as the integrated circuit 120, according to the conversion signal S SA . In this example, the integrated circuit 120 can simultaneously receive the detection result S S_OUT of the analog format and receive the data signal SDA in the digital format according to the clock signal SCL, but is not intended to limit the present invention. The present invention does not limit the communication protocol in which the integrated circuit 110 communicates with the integrated circuit 120. In other embodiments, the integrated circuit 110 can generate a clock signal and a plurality of data signals according to the detection result S S_OUT , and provide the clock signal and the data signal to the integrated circuit 120 according to a specific communication protocol.
第2B圖為本發明之積體電路之另一可能實施例。第2B圖相似第2A圖,不同之處在於阻抗開關單元210B。在本實施例中,阻抗開關單元210B具有電晶體212。偵測單元230偵測電晶體212的汲極與源極間的一等效電阻RDS的壓差,並根據等效電阻RDS的壓差,產生偵測結果SS_OUT。在本實施例中,以電晶體212之等效電阻RDS來取代第一實施例中的阻抗單元211,其優點是可節省成本。 Fig. 2B is another possible embodiment of the integrated circuit of the present invention. Fig. 2B is similar to Fig. 2A except that the impedance switch unit 210B. In the present embodiment, the impedance switch unit 210B has a transistor 212. The detecting unit 230 detects a voltage difference between an equivalent resistance R DS between the drain and the source of the transistor 212, and generates a detection result S S_OUT according to the voltage difference of the equivalent resistance R DS . In the present embodiment, the impedance unit 211 in the first embodiment is replaced with the equivalent resistance R DS of the transistor 212, which is advantageous in that cost can be saved.
在一可能實施例中,積體電路120根據偵測結果SS_OUT、積體電路110的內部溫度以及輸入電壓VIN,計算得知流經等效電阻RDS的電流。另外,第2B圖之保護單元220、偵測單元230以及轉換單元250的功能及運作皆同第2A圖所述,故不予贅述。第2B圖多了保護單元260、偵測單元270以及禁能單元280。 In a possible embodiment, the integrated circuit 120 calculates the current flowing through the equivalent resistance R DS according to the detection result S S_OUT , the internal temperature of the integrated circuit 110, and the input voltage VIN. In addition, the functions and operations of the protection unit 220, the detection unit 230, and the conversion unit 250 in FIG. 2B are the same as those in FIG. 2A, and thus are not described herein. FIG. 2B includes a protection unit 260, a detection unit 270, and a disable unit 280.
保護單元260偵測積體電路110的內部溫度。本發明並不限定保護單元260的電路架構。只要能夠偵測溫度的電路架構,均可作為保護單元260。在一可能實施例中,保護單元260具有一溫度感測器。當積體電路110的內部溫度大於一預設溫度時,保護單元260產生一偵測信號SDET3。在一可能實施例,控制單元240根據偵測信號SDET3,不導通電晶體212,用以停止提供驅動信號SD予負載130,進而保護電晶體212不因過溫而被燒毀。 The protection unit 260 detects the internal temperature of the integrated circuit 110. The present invention does not limit the circuit architecture of the protection unit 260. As long as the circuit structure capable of detecting temperature can be used as the protection unit 260. In a possible embodiment, the protection unit 260 has a temperature sensor. When the internal temperature of the integrated circuit 110 is greater than a predetermined temperature, the protection unit 260 generates a detection signal S DET3 . In a possible embodiment, the control unit 240 does not conduct the transistor 212 according to the detection signal S DET3 to stop providing the driving signal S D to the load 130, thereby protecting the transistor 212 from being burnt due to over temperature.
偵測單元270偵測輸入電壓VIN的位準。本發明並不限定偵測單元270的電路架構。只要能夠偵測電壓位準的電路,均可作為偵測單元270。在一可能實施例中,偵測單元270 係為一電壓偵測器。當輸入電壓VIN小於一預設電壓時,偵測單元270禁能控制單元240。 The detecting unit 270 detects the level of the input voltage VIN. The present invention does not limit the circuit architecture of the detecting unit 270. As long as the circuit capable of detecting the voltage level can be used as the detecting unit 270. In a possible embodiment, the detecting unit 270 It is a voltage detector. When the input voltage VIN is less than a predetermined voltage, the detecting unit 270 disables the control unit 240.
禁能單元280根據一外部致能信號EN,禁能或致能控制單元240。舉例而言,當外部致能信號EN為一第一位準時,禁能單元280產生一禁能信號,用以停止控制單元240的運作;當外部致能信號EN為一第二位準時,禁能單元280產生一致能信號,用以致能活化控制單元240。舉例來說,上述第一位準為一接地位準,而上述第二位準為一高位準,例如3.3伏特;抑或是上述第一位準為一高位準,例如3.3伏特,而上述第二位準為一接地位準。本發明並不限定禁能單元280的電路架構。在一可能實施例中,禁能單元280係由邏輯電路所組成。 The disable unit 280 disables or enables the control unit 240 based on an external enable signal EN. For example, when the external enable signal EN is at a first level, the disable unit 280 generates a disable signal for stopping the operation of the control unit 240; when the external enable signal EN is at a second level, the switch is disabled. The energy unit 280 generates a consistent energy signal to enable activation of the control unit 240. For example, the first level is a ground level, and the second level is a high level, such as 3.3 volts; or the first level is a high level, such as 3.3 volts, and the second The level is a ground level. The present invention is not limited to the circuit architecture of the disable unit 280. In a possible embodiment, the disable unit 280 is comprised of logic circuitry.
在其它實施例中,保護單元260、偵測單元270以及禁能單元280之至少一者可被省略。再者,保護單元260、偵測單元270以及禁能單元280之至少一者可應用至第2A圖所示的積體電路110之中。另外,第2B圖的阻抗開關單元210B亦可取代第2A圖的阻抗開關單元210A。 In other embodiments, at least one of the protection unit 260, the detection unit 270, and the disable unit 280 may be omitted. Furthermore, at least one of the protection unit 260, the detection unit 270, and the disable unit 280 can be applied to the integrated circuit 110 shown in FIG. 2A. Further, the impedance switching unit 210B of FIG. 2B may be substituted for the impedance switching unit 210A of FIG. 2A.
第3A圖為本發明之保護單元260之一可能實施例。如圖所示,保護單元260包括電阻311、312、熱感測裝置313、齊納二極體314以及比較器315。電阻311接收電壓Vs並耦接比較器315的非反相輸入端。電阻312接收電壓V1,用以上拉(pull)比較器315的輸出端位準。 3A is a possible embodiment of a protection unit 260 of the present invention. As shown, the protection unit 260 includes resistors 311, 312, a thermal sensing device 313, a Zener diode 314, and a comparator 315. The resistor 311 receives the voltage Vs and is coupled to the non-inverting input of the comparator 315. Resistor 312 receives voltage V1 and pulls the output of comparator 315 to a level.
熱感測裝置313耦接比較器315的非反相輸入端。在本實施例中,熱感測裝置313具有複數溫度感測二極體,但並非用以限制本發明。只要能夠偵測溫度的元件均可作為熱感 測裝置313。舉例而言,熱感測裝置313可由熱敏電阻所構成。另外,齊納二極體314的陰極耦接比較器315的反相輸入端。其陽極接收一接地位準GND,用以提供一參考電壓Vref1。比較器315的輸出端位準作為偵測信號SDET3。 The thermal sensing device 313 is coupled to the non-inverting input of the comparator 315. In the present embodiment, the thermal sensing device 313 has a plurality of temperature sensing diodes, but is not intended to limit the invention. Any component capable of detecting temperature can be used as the thermal sensing device 313. For example, the thermal sensing device 313 can be constructed of a thermistor. In addition, the cathode of the Zener diode 314 is coupled to the inverting input of the comparator 315. The anode receives a ground level GND for providing a reference voltage Vref1. The output level of the comparator 315 is used as the detection signal S DET3 .
當積體電路110的溫度上升時,熱感測裝置313的電壓Vref2將發生變化。當熱感測裝置313的電壓Vref2大於參考電壓Vref1時,表示積體電路110的溫度尚未大於一預設溫度,因此,比較器315的輸出端位準為高位準。當熱感測裝置313的電壓Vref2小於參考電壓Vref1時,表示積體電路110的溫度大於預設溫度,因此,比較器315的輸出端位準為低位準。 When the temperature of the integrated circuit 110 rises, the voltage Vref2 of the thermal sensing device 313 changes. When the voltage Vref2 of the thermal sensing device 313 is greater than the reference voltage Vref1, it indicates that the temperature of the integrated circuit 110 has not been greater than a predetermined temperature, and therefore, the output level of the comparator 315 is at a high level. When the voltage Vref2 of the thermal sensing device 313 is less than the reference voltage Vref1, it indicates that the temperature of the integrated circuit 110 is greater than the preset temperature, and therefore, the output level of the comparator 315 is at a low level.
第3B圖為保護單元260之另一可能實施例。如圖所示,保護單元260包括電阻321~324、熱感測裝置325以及比較器326。比較器326根據電壓信號Vref3及Vref4產生偵測信號SDET3。由於保護單元260的各元件的連接關係已清楚呈現於第3B圖中,故不再贅述。 FIG. 3B is another possible embodiment of the protection unit 260. As shown, the protection unit 260 includes resistors 321 - 324, a thermal sensing device 325, and a comparator 326. The comparator 326 generates the detection signal S DET3 based on the voltage signals Vref3 and Vref4. Since the connection relationship of the components of the protection unit 260 has been clearly shown in FIG. 3B, it will not be described again.
在本實施例中,熱感測裝置325係由複數熱敏電阻所構成。熱敏電阻可為正溫度係數(Positive Temperature Coefficient;PTC)熱敏電阻或是負溫度係數(Negative Temperature Coefficient;NTC)熱敏電阻。 In the present embodiment, the thermal sensing device 325 is composed of a plurality of thermistors. The thermistor can be a positive temperature coefficient (PTC) thermistor or a negative temperature coefficient (NTC) thermistor.
除非另作定義,在此所有詞彙(包含技術與科學詞彙)均屬本發明所屬技術領域中具有通常知識者之一般理解。此外,除非明白表示,詞彙於一般字典中之定義應解釋為與其相關技術領域之文章中意義一致,而不應解釋為理想狀態或過分正式之語態。 Unless otherwise defined, all terms (including technical and scientific terms) are used in the ordinary meaning Moreover, unless expressly stated, the definition of a vocabulary in a general dictionary should be interpreted as consistent with the meaning of an article in its related art, and should not be interpreted as an ideal state or an overly formal voice.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧操作系統 100‧‧‧ operating system
110、120‧‧‧積體電路 110, 120‧‧‧ integrated circuits
130‧‧‧負載 130‧‧‧load
VIN‧‧‧輸入電壓 VIN‧‧‧ input voltage
EN‧‧‧外部致能信號 EN‧‧‧External enable signal
SD‧‧‧驅動信號 S D ‧‧‧ drive signal
OC‧‧‧過流信號 OC‧‧‧Overcurrent signal
SS_OUT‧‧‧偵測結果 S S_OUT ‧‧‧Detection results
SCL‧‧‧時脈信號 SCL‧‧‧ clock signal
SDA‧‧‧資料信號 SDA‧‧‧ information signal
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