TW201511624A - Component-embedded substrate and manufacturing method for same - Google Patents

Component-embedded substrate and manufacturing method for same Download PDF

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Publication number
TW201511624A
TW201511624A TW103111182A TW103111182A TW201511624A TW 201511624 A TW201511624 A TW 201511624A TW 103111182 A TW103111182 A TW 103111182A TW 103111182 A TW103111182 A TW 103111182A TW 201511624 A TW201511624 A TW 201511624A
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Taiwan
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component
protective
built
via hole
insulating layer
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TW103111182A
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Chinese (zh)
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Mitsuaki Toda
Tohru Matsumoto
Seiko Murata
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Meiko Electronics Co Ltd
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Publication of TW201511624A publication Critical patent/TW201511624A/en

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    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82009—Pre-treatment of the connector or the bonding area
    • H01L2224/8203—Reshaping, e.g. forming vias
    • H01L2224/82035—Reshaping, e.g. forming vias by heating means
    • H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
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    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
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    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1901—Structure
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431—Details of mounted components
    • H05K2201/10439—Position of a single component
    • H05K2201/10454—Vertically mounted
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • H05K2203/1469—Circuit made after mounting or encapsulation of the components

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

A component-embedded substrate (20) has: an insulating layer (6) including an insulating resin material; at least one IC component (4) embodied upon the insulating layer (6); wiring patterns (16) which electrically connect connection terminals (4a and 4b) of an IC component (4) with the outside of the insulating layer (6); and at least one protection component (5) which is of taller height than the IC component (4) and for which electrical functioning does not occur.

Description

零件內建基板及其製造方法 Part built-in substrate and manufacturing method thereof

本發明係關於內建電氣零件或電子零件的零件內建基板及其製造方法。 The present invention relates to a component built-in substrate for built-in electrical parts or electronic parts and a method of manufacturing the same.

一直以來，進行用以加強各種的電氣．電子機器的小型化、薄型化、輕量化以及多功能化的研究開發。特別是行動電話、筆記型電腦、數位相機等的民生用品，雖然力求多功能化，但也強力要求小型化、薄型化及輕量化。又，各種電氣．電子機器中，也力求傳送信號的高頻化及高速化，也要求防止伴隨的信號雜訊增大。 Has been used to strengthen a variety of electrical. Research and development of miniaturization, thinning, light weight, and multi-functionality of electronic equipment. In particular, consumer products such as mobile phones, notebook computers, and digital cameras are demanding multi-functionality, but they are also strongly required to be smaller, thinner, and lighter. Also, all kinds of electricity. In electronic equipment, it is also required to increase the frequency and speed of transmission signals, and it is also required to prevent an increase in accompanying signal noise.

為了實現如此的要求，作為納入電氣．電子機器的電路基板，習知具有基板表面上裝配的各種電氣．電子零件內建在基板絕緣層的絕緣基材內的構造之零件內建基板、層壓上述零件內建基板形成的零件內建多層電路基板的研究開發及製造係一直以來進行的。例如，專利文件1中，揭示零件內建基板及其製造方法。 In order to achieve such a request, as incorporated into the electrical. The circuit board of an electronic machine, which is known to have various electrical components assembled on the surface of the substrate. A research and development and manufacturing system in which a built-in substrate of a structure in which an electronic component is built in an insulating base material of a substrate insulating layer and a component in which the component built-in substrate is laminated is built-in. For example, Patent Document 1 discloses a component built-in substrate and a method of manufacturing the same.

專利文件1中揭示的零件內建基板的製造方法中，支持體上形成銅箔構成的導電薄膜層，在上述導電薄膜層上塗佈接合劑。接著，經由上述接合劑進行內建零件的裝配，之後形成絕緣基材覆蓋上述內建零件。經過如此的製造步驟形 成的零件內建基板，基板本體厚度變得比習知薄，還可以內建比基板表面上裝配更多的電氣．電子零件，可以用於各種用途的電氣．電子機器。 In the method for producing a component built-in substrate disclosed in Patent Document 1, a conductive thin film layer made of a copper foil is formed on a support, and a bonding agent is applied onto the conductive thin film layer. Next, the assembly of the built-in components is performed via the above bonding agent, and then an insulating substrate is formed to cover the above-described built-in components. After such a manufacturing step The built-in parts of the finished part, the thickness of the substrate body becomes thinner than conventional, and it can be built in more than the electrical surface of the substrate. Electronic parts that can be used for electrical purposes in a variety of applications. Electronic machine.

[先行技術文件] [advance technical documents] [專利文件] [Patent Document]

[專利文件1]專利第4874305號公報 [Patent Document 1] Patent No. 4874305

不過，內建零件，使用金屬氧化膜半導體的場效型電晶體(MOSFET：金屬-氧化-半導體場效電晶體)、或是介電常數低的材料(低k材料)作為層間絕緣膜使用的積體電路(IC：Integrated Circuit)等的機械剛性脆弱之零件時，由於零件內建基板的製造步驟中或零件內建基板完成後的零件等的裝配處理或加熱處理，上述內部零件中產生裂開的問題。上述裂開的原因，考慮為對於零件內建基板的機械衝擊或彎曲應力、或上述內建零件與密封上述內建零件的樹脂之間的熱膨脹差產生的內部應力。 However, built-in parts, field effect type transistors using metal oxide film semiconductors (MOSFET: metal-oxidation-semiconductor field effect transistor), or materials with low dielectric constant (low-k material) are used as interlayer insulating films. When a mechanically rigid component such as an integrated circuit (IC: Integrated Circuit) is used, the internal component is cracked due to assembly processing or heat treatment of the component built-in substrate or the component after completion of the component built-in substrate. Open question. The reason for the above-mentioned cracking is considered to be an internal stress caused by a mechanical impact or bending stress on the built-in substrate of the component or a difference in thermal expansion between the built-in component and the resin sealing the built-in component.

本發明有鑑於如此的課題而形成，其目的在於提供往內建零件的裂開發生率比習知降低之零件內建基板、以及即使零件內建基板的製造過程中及製造步驟後的各種處理中也抑制往內建零件產生裂開之零件內建基板的製造方法。 The present invention has been made in view of such a problem, and an object of the present invention is to provide a component built-in substrate in which the cracking rate of the built-in component is lower than that of the conventional component, and various processes in the manufacturing process and after the manufacturing process of the component built-in substrate. It also suppresses the manufacturing method of the built-in substrate of the part in which the built-in part is cracked.

為了達成上述目的，本發明的零件內建基板，具有絕緣層，包含絕緣樹脂材料；至少一IC零件，埋設在上述 絕緣層內；配線圖案，電氣連接上述IC零件的連接端子與上述絕緣層的外部；以及至少一保護零件，埋設在上述絕緣層內，比上述IC零件高且無電氣功能。 In order to achieve the above object, the component built-in substrate of the present invention has an insulating layer containing an insulating resin material; at least one IC component is embedded in the above In the insulating layer, a wiring pattern electrically connecting the connection terminal of the IC component and the outside of the insulating layer, and at least one protective component embedded in the insulating layer is higher than the IC component and has no electrical function.

上述零件內建基板中，最好上述絕緣層內埋設一個上述IC零件，圍繞上述IC零件的周圍配置複數的上述保護零件。 Preferably, in the component built-in substrate, one of the IC components is embedded in the insulating layer, and a plurality of the protective components are disposed around the IC component.

又，上述任一的零件內建基板中，上述保護零件的剛性最好比上述IC零件高。 Further, in any of the component built-in substrates described above, it is preferable that the protective member has a higher rigidity than the IC component.

又，上述任一的零件內建基板中，上述保護零件，也可以由絕緣材料構成。在此情況下，上述零件內建基板，也可以具有從上述絕緣層到達上述保護零件的導通孔。 Further, in any of the component built-in substrates described above, the protective component may be made of an insulating material. In this case, the component built-in substrate may have a via hole that reaches the protective component from the insulating layer.

於是，具有上述導通孔的情況下，上述導通孔，分別從上述絕緣層的表背面往上述絕緣層的內部延伸的同時，到達上述保護零件的端部，上述配線圖案最好只由在上述絕緣層的一端面上形成的金屬層、以及從上述金屬層往上述絕緣層的內部延伸到達位於上述金屬層的形成面側的上述IC零件的連接端子之其他導通孔構成。 Therefore, when the via hole is provided, the via hole extends from the front and back surfaces of the insulating layer to the inside of the insulating layer, and reaches the end portion of the protective member, and the wiring pattern is preferably only used for the insulating layer. A metal layer formed on one end surface of the layer and another via hole extending from the metal layer to the inside of the insulating layer to a connection terminal of the IC component on the side of the formation surface of the metal layer.

另一方面，上述保護零件係主動元件或被動元件，以上述絕緣層圍繞也可以電氣絕緣。 On the other hand, the protective component is an active component or a passive component, and may be electrically insulated by surrounding the insulating layer.

為了達成上述目的，本發明的零件內建基板的製造方法，包括準備步驟，準備在表面上形成金屬層的支持板；裝載步驟，上述金屬層的表面上經由接合層，分別裝載至少一個IC零件及比上述IC零件高的保護零件；絕緣層形成步驟，層壓絕緣樹脂材料以覆蓋上述金屬層、上述IC零件及上述保 護零件，形成埋設上述IC零件及上述保護零件的絕緣層；以及配線圖案形成步驟，形成電氣連接上述IC零件的連接端子與上述絕緣層的外部之配線圖案；其中，不形成使上述保護零件電氣作用的導通狀態。 In order to achieve the above object, a method for manufacturing a component built-in substrate according to the present invention includes a preparation step of preparing a support plate for forming a metal layer on a surface, and a loading step of loading at least one IC component on the surface of the metal layer via a bonding layer. And a protective part higher than the above IC part; an insulating layer forming step of laminating an insulating resin material to cover the metal layer, the IC part, and the above-mentioned a protective layer forming an insulating layer embedding the IC component and the protective component; and a wiring pattern forming step of forming a wiring pattern electrically connecting the connection terminal of the IC component and the outside of the insulating layer; wherein the protective component is not formed The conduction state of the action.

上述的零件內建基板的製造方法中，上述裝載步驟中，最好只裝載1個上述IC零件，圍繞上述1個IC零件的周圍配置裝載複數的上述保護零件。 In the above method of manufacturing a component built-in substrate, it is preferable that only one of the IC components is mounted in the loading step, and a plurality of the protective components are placed around the one IC component.

又，上述任一的零件內建基板的製造方法中，上述保護零件的剛性最好比上述IC零件高。 Further, in the method of manufacturing a component built-in substrate according to any of the above, the rigidity of the protective component is preferably higher than that of the IC component.

又，上述任一的零件內建基板的製造方法中，上述配線圖案形成步驟，也可以包括形成第1導孔步驟，第1導孔貫通上述金屬層及上述接合層，到達位於上述接合層側的上述IC零件的連接端子；以及填充步驟，上述第1導孔內填充導電體。在此情況下，上述配線圖案形成步驟，也可以更包括形成第2導孔步驟，第2導孔貫通上述絕緣層，到達位於上述接合層側的相反側之上述IC零件的連接端子；以及填充步驟，上述第2導孔內填充導電體。 Further, in the method of manufacturing a component-embedded substrate according to any of the above, the wiring pattern forming step may include a step of forming a first via hole, the first via hole penetrating through the metal layer and the bonding layer, and reaching the bonding layer side And a filling step of the IC component; and the filling step, wherein the first via hole is filled with a conductor. In this case, the wiring pattern forming step may further include a step of forming a second via hole, the second via hole penetrating through the insulating layer, and reaching a connection terminal of the IC component on the side opposite to the bonding layer side; and filling In the step, the second via hole is filled with a conductor.

包含形成上述第1導孔及第2導孔的步驟的製造方法中，上述保護零件由絕緣材料構成，上述配線圖案形成步驟，也可以包括形成第3導孔步驟，第3導孔貫通上述金屬層及上述接合層，到達位於上述接合層側的上述保護零件的一端；形成第4導孔步驟，第4導孔貫通上述絕緣層，到達位於上述接合層側的相反側之上述保護零件的另一端子；以及填充步驟，上述第3導孔及上述第4導孔內填充導電體。 In the manufacturing method including the step of forming the first via hole and the second via hole, the protective member is made of an insulating material, and the wiring pattern forming step may include a step of forming a third via hole, and the third via hole penetrates the metal The layer and the bonding layer reach one end of the protective component on the bonding layer side; and the fourth via hole is formed, the fourth via hole penetrates the insulating layer, and reaches the protective component on the opposite side of the bonding layer side And a filling step, wherein the third via hole and the fourth via hole are filled with a conductor.

另一方面，包含形成上述第1導孔及第2導孔的 步驟之製造方法中，上述保護零件是主動元件或被動元件，維持以上述絕緣層圍繞上述保護零件使電氣絕緣也可以。 On the other hand, including the formation of the first via hole and the second via hole In the manufacturing method of the step, the protective component is an active component or a passive component, and the insulating layer may be electrically insulated from the protective component.

於是，上述任一零件內建基板的製造方法中，上 述配線圖案形成步驟，對上述金屬層施行圖案化，在上述絕緣層的表面上延伸上述配線圖案也可以。 Therefore, in the manufacturing method of any of the above-mentioned parts built-in substrates, In the wiring pattern forming step, the metal layer may be patterned to extend the wiring pattern on the surface of the insulating layer.

根據本發明的零件內建基板，因為脆弱的IC零件與比上述IC零件高的保護零件作為內建零件埋設在絕緣層內，減輕衝擊負載、外部應力、以及絕緣樹脂材料的熱膨脹等在IC零件中發生裂開主因的影響，比習知抑制IC零件中發生裂開。 According to the component built-in substrate of the present invention, since the fragile IC component and the protective component higher than the above IC component are embedded as internal components in the insulating layer, the impact load, the external stress, and the thermal expansion of the insulating resin material are alleviated in the IC component. The effect of the main cause of cracking occurs, which is more cracking than the conventional suppression of IC parts.

又，根據本發明的零件內建基板的製造方法中，因為脆弱的IC零件與比上述IC零件高的保護零件作為內建零件埋設在絕緣層內，在零件內建基板的製造過程中及製造步驟後的各種處理中也抑制往IC零件產生裂開。 Moreover, according to the method of manufacturing a component built-in substrate of the present invention, since the fragile IC component and the protective component higher than the IC component are embedded as internal components in the insulating layer, the manufacturing process and manufacturing of the component built-in substrate are performed. Cracking of the IC component is also suppressed in various processes after the step.

1‧‧‧支持板 1‧‧‧Support board

2‧‧‧金屬層 2‧‧‧metal layer

3‧‧‧接合層 3‧‧‧ bonding layer

4‧‧‧IC元件 4‧‧‧IC components

4a、4b‧‧‧連接端子 4a, 4b‧‧‧ connection terminals

5‧‧‧保護元件 5‧‧‧Protection components

6‧‧‧絕緣層 6‧‧‧Insulation

7‧‧‧金屬層 7‧‧‧metal layer

11‧‧‧第1導孔 11‧‧‧1st guide hole

12‧‧‧第2導孔 12‧‧‧2nd guide hole

13‧‧‧第3導孔 13‧‧‧3rd guide hole

14‧‧‧第4導孔 14‧‧‧4th guide hole

15‧‧‧導通孔 15‧‧‧vias

16‧‧‧配線圖案 16‧‧‧Wiring pattern

16’‧‧‧配線圖案 16’‧‧‧Wiring pattern

20‧‧‧零件內建基板 20‧‧‧Parts built-in substrate

20’‧‧‧零件內建基板 20'‧‧‧Parts built-in substrate

20”‧‧‧零件內建基板 20"‧‧‧Parts built-in substrate

20'''‧‧‧零件內建基板 20'''‧‧‧ parts built-in substrate

25‧‧‧保護元件 25‧‧‧Protection components

25a、25b‧‧‧連接端子 25a, 25b‧‧‧ connection terminal

[第1圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第2圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第3圖]係第2圖所示的製造步驟中的概略平面圖；[第4圖]係根據本發明的實施例的零件內建基板的製造 方法之各製造步驟中的概略剖面圖；[第5圖]係第4圖所示的製造步驟中的概略平面圖；[第6圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第7圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第8圖]係根據本發明的實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖；[第9圖]係根據本發明的變形例的零件內建基板的概略剖面圖；[第10圖]係根據本發明的變形例的零件內建基板的概略剖面圖；以及[第11圖]係根據本發明的變形例的零件內建基板的概略剖面圖。 1 is a schematic cross-sectional view showing each manufacturing step of a method of manufacturing a component built-in substrate according to an embodiment of the present invention; [FIG. 2] A method of manufacturing a component built-in substrate according to an embodiment of the present invention A schematic cross-sectional view of each of the manufacturing steps; [Fig. 3] is a schematic plan view of the manufacturing process shown in Fig. 2; [Fig. 4] is a manufacturing of a component built-in substrate according to an embodiment of the present invention. A schematic cross-sectional view of each manufacturing step of the method; [Fig. 5] is a schematic plan view of the manufacturing step shown in Fig. 4; [Fig. 6] is a method of manufacturing a part built-in substrate according to an embodiment of the present invention A schematic cross-sectional view of each manufacturing step; [Fig. 7] is a schematic cross-sectional view of each manufacturing step of a method of manufacturing a component-integrated substrate according to an embodiment of the present invention; [Fig. 8] is a diagram according to the present invention. (Section 9 is a schematic cross-sectional view of a component built-in substrate according to a modification of the present invention; [Fig. 10] is based on the present invention. A schematic cross-sectional view of a component built-in substrate according to a modification of the invention; and [11] is a schematic cross-sectional view of a component built-in substrate according to a modification of the present invention.

以下，參照圖面，關於本發明的實施例，根據實施例及變形例，詳細說明。又，本發明並非限定於以下說明的內容，在不變更主旨的範圍內可以任意變更實施。又，用於說明實施例及變形例的圖面，都是模式顯示根據本發明的零件內建基板及其構成構件，為了深入理解進行部分強調、放大、縮小或省略，有時不會正確顯示零件內建基板及其構成構件的縮尺或形狀等。又，實施例及變形例中使用的各種數值都是顯示一範例，根據需要可以做各種變更。 Hereinafter, embodiments of the present invention will be described in detail based on embodiments and modifications with reference to the drawings. The present invention is not limited to the contents described below, and may be arbitrarily changed and implemented without departing from the scope of the invention. Moreover, the drawings for explaining the examples and the modifications are all schematic display of the component built-in substrate and the constituent members thereof according to the present invention, and may be partially emphasized, enlarged, reduced, or omitted for further understanding, and may not be correctly displayed. The scale or shape of the built-in substrate and its constituent members. Further, various numerical values used in the examples and the modifications are examples of display, and various modifications can be made as needed.

<實施例> <Example>

以下，關於根據本發明實施例的零件內建基板的製造方法，參照第1至8圖，詳細說明。在此，第1、2、4、6至8圖，係根據本實施例的零件內建基板的製造方法之各製造步驟中的概略剖面圖。又第3圖係第2圖所示的製造步驟中的概略平面圖，而第5圖係第4圖所示的製造步驟中的概略平面圖。 Hereinafter, a method of manufacturing a component built-in substrate according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 8. Here, the first, second, fourth, and sixth to eighth drawings are schematic cross-sectional views in the respective manufacturing steps of the method of manufacturing the component built-in substrate according to the present embodiment. 3 is a schematic plan view of the manufacturing process shown in FIG. 2, and FIG. 5 is a schematic plan view of the manufacturing process shown in FIG.

首先，如第1圖所示，進行準備支持板1的準備步驟。具體而言，在具有剛性的支持板1上形成金屬層2，並準備表面由金屬層2覆蓋的支持板1。金屬層2，在之後的製造步驟中，應形成配線圖案的一部分。使用具有製程條件必需程度的剛性的支持板，作為支持板1。例如，支持板1，以具有剛性的SUS(不銹鋼)板或鋁板等形成也可以。又，本實施例中，金屬層2由銅構成。例如，支持板1由SUS構成的話，可以析出鍍銅形成金屬層2，支持板1是鋁板的話，可以貼上銅箔形成金屬層2。 First, as shown in Fig. 1, a preparation step of preparing the support board 1 is performed. Specifically, the metal layer 2 is formed on the rigid support plate 1, and the support plate 1 whose surface is covered by the metal layer 2 is prepared. In the metal layer 2, a part of the wiring pattern should be formed in the subsequent manufacturing steps. As the support plate 1, a rigid support plate having a necessary degree of process conditions is used. For example, the support plate 1 may be formed of a rigid SUS (stainless steel) plate or an aluminum plate or the like. Further, in the present embodiment, the metal layer 2 is made of copper. For example, when the support plate 1 is made of SUS, the copper plating can be deposited to form the metal layer 2. When the support plate 1 is an aluminum plate, the metal layer 2 can be formed by attaching a copper foil.

其次，如第2及3圖所示，例如以配料機或印刷等在金屬層2上形成由絕緣材料構成的接合層3。本實施例中，後述的第4圖及第5圖的步驟中，因為裝配5個內建零件(1個IC零件及4個保護零件)，接合層3在金屬層2上5處互相間離形成。又，接合層3的配置構成，在金屬層2的中央部配置1個接合層3，剩下的4個接合層3圍繞在上述中央部形成的1個接合層3而配置。又，第3圖中雖然形成5個接合層3，但實際的製造步驟，上述5個為一組，形成複數組的接合層3。又，根據裝配的內建零件數量、尺寸、形狀，可以適當變更接合層3的數量及配置構成。 Next, as shown in Figs. 2 and 3, a bonding layer 3 made of an insulating material is formed on the metal layer 2 by, for example, a batching machine or printing. In the present embodiment, in the steps of FIGS. 4 and 5 to be described later, since five built-in parts (one IC part and four protective parts) are assembled, the bonding layer 3 is separated from each other on the metal layer 2 at five places. form. Further, in the arrangement of the bonding layer 3, one bonding layer 3 is disposed in the central portion of the metal layer 2, and the remaining four bonding layers 3 are disposed around one bonding layer 3 formed in the central portion. Further, in the third drawing, although five bonding layers 3 are formed, in the actual manufacturing steps, the above five are grouped, and the bonding layer 3 of the complex array is formed. Further, the number and arrangement of the bonding layers 3 can be appropriately changed depending on the number, size, and shape of the built-in components to be assembled.

其次，如第4及5圖所示，經由接合層3，進行在 金屬層2上裝載IC零件4及保護零件5的裝載步驟。具體而言，使用具有吸引噴嘴的表面裝配機(晶片安裝器)，在接合層3上裝載內建零件的IC零件4及保護零件5。在此，IC零件4，係具有連接端子4a、4b的MOSFET、或介電常數低的材料用作層間絕緣膜材料的積體電路等，容易由於應力等的影響產生裂開的較脆弱零件。另一方面，保護零件5由絕緣材料構成，不具有導電氣及連接端子。又，保護零件5，比，IC零件高(即，在層壓方向厚度是厚的)且剛性比IC零件4高的零件。本實施例中，玻璃環氧樹脂基板加工為長方體狀，用作保護零件5。 Next, as shown in FIGS. 4 and 5, the bonding layer 3 is used to perform The loading step of loading the IC component 4 and the protective component 5 on the metal layer 2. Specifically, the IC component 4 and the protective component 5 of the built-in component are mounted on the bonding layer 3 using a surface mounter (wafer mounter) having a suction nozzle. Here, the IC component 4 is a MOSFET having a connection terminal 4a or 4b or a material having a low dielectric constant as an integrated circuit of an interlayer insulating film material, and is susceptible to cracking and fragile components due to stress or the like. On the other hand, the protective member 5 is made of an insulating material and does not have a conductive gas and a connection terminal. Further, the protective member 5 is higher in height than the IC component (that is, thick in the lamination direction) and has a higher rigidity than the IC component 4. In the present embodiment, the glass epoxy substrate is processed into a rectangular parallelepiped shape and used as the protective member 5.

又，如第4圖所示，其連接端子4a與接合層3接 合，裝載IC零件4。另一方面，長方體的6面內的1面與接合層3接合，裝載保護零件5。又，如第5圖所示，裝載IC零件4及保護零件5時，圍繞IC零件4的周圍，配置保護零件5。 又，裝載IC零件4及保護零件5，使用焊錫在金屬層2上執行也可以。 Moreover, as shown in FIG. 4, the connection terminal 4a is connected to the bonding layer 3 Fit, load IC part 4. On the other hand, one surface of the six faces of the rectangular parallelepiped is joined to the bonding layer 3, and the protective member 5 is mounted. Moreover, as shown in FIG. 5, when the IC component 4 and the protective component 5 are mounted, the protective component 5 is disposed around the periphery of the IC component 4. Further, the IC component 4 and the protective component 5 may be mounted on the metal layer 2 using solder.

其次，如第6圖所示，進行形成絕緣層6的絕緣 層形成步驟。上述絕緣層形成步驟中，覆蓋金屬層2、IC零件4及保護零件5，(即，對於金屬層2、IC零件4及保護零件5)層壓應成為絕緣層6的絕緣樹脂材料，在絕緣層6內埋設IC零件4及保護零件5。具體而言，對IC零件4及保護零件5在配置金屬層2側的相反側堆疊膠片等的絕緣樹脂材料，在真空下一邊加熱，一邊進行加壓。此加壓，例如使用真空加壓式的加壓機進行。又，絕緣樹脂材料，最好使用熱膨脹係數接近 IC零件4之材料。又，絕緣層6形成之際，金屬層2所在位置的面的相反側的表面上，形成另外的金屬層7。在此，金屬層7，與金屬層2同樣地，之後的製造步驟中，係應構成配線圖案的一部分。 Next, as shown in FIG. 6, the insulation for forming the insulating layer 6 is performed. Layer formation step. In the insulating layer forming step, the metal layer 2, the IC component 4, and the protective component 5 are covered, that is, the insulating resin material which should be the insulating layer 6 is laminated on the metal layer 2, the IC component 4, and the protective component 5, and is insulated. The IC component 4 and the protective component 5 are buried in the layer 6. Specifically, the insulating resin material such as a film is stacked on the opposite side of the side on which the metal layer 2 is disposed on the IC component 4 and the protective component 5, and is pressurized while being heated under vacuum. This pressurization is performed, for example, using a vacuum pressurizing press. Also, the insulating resin material preferably uses a thermal expansion coefficient close to The material of IC part 4. Further, when the insulating layer 6 is formed, a further metal layer 7 is formed on the surface on the opposite side of the surface where the metal layer 2 is located. Here, in the same manner as the metal layer 2, the metal layer 7 should constitute a part of the wiring pattern in the subsequent manufacturing steps.

其次，如第7圖所示，隨著除去支持板1，形成第 1導孔11、第2導孔12、第3導孔13及第4導孔14。第1導孔11~第4導孔14的形成方法，首先除去支持板1，之後，例如以CO2雷射照射導孔形成處，除去CO2雷射照射部分的構材，形成各導孔。又，不限於CO2雷射，使用例如UV-YAG或準分子等的高頻雷射也可以。 Next, as shown in FIG. 7, the first guide hole 11, the second guide hole 12, the third guide hole 13, and the fourth guide hole 14 are formed as the support plate 1 is removed. The method of forming the first to fourth guide hole 11 of the guide hole 14, the support plate 1 is first removed, then, for example, laser irradiation of CO 2 is formed at the guide hole, removing girders CO 2 laser irradiated portion, each guide hole is formed . Further, it is not limited to a CO 2 laser, and a high-frequency laser such as UV-YAG or an excimer may be used.

在此，第1導孔11，貫通金屬層2及接合層3， 到達位於接合層3側的連接端子4a。又，第2導孔12，貫通金屬層7及絕緣層6，到達位於接合層3側的相反側之連接端子4b。又，第3導孔13，貫通金屬層2及接合層3，到達位於接合層3側的保護零件5的一端。於是，第2導孔12，貫通金屬層7及及絕緣層6，到達位於接合層3側的相反側之保護零件5的另一端。 Here, the first via hole 11 penetrates through the metal layer 2 and the bonding layer 3, The connection terminal 4a on the side of the bonding layer 3 is reached. Further, the second via hole 12 penetrates through the metal layer 7 and the insulating layer 6, and reaches the connection terminal 4b on the side opposite to the bonding layer 3 side. Further, the third via hole 13 penetrates through the metal layer 2 and the bonding layer 3, and reaches one end of the protective member 5 on the side of the bonding layer 3. Then, the second via hole 12 penetrates through the metal layer 7 and the insulating layer 6, and reaches the other end of the protective member 5 on the side opposite to the bonding layer 3 side.

形成各導孔形成後，施行除膠處理，最好除去導 孔形成之際殘留的樹脂。又，對連接端子4a、4b更施行微蝕(Soft etching)處理，最好除去由於導孔形成而露出的連接端子4a、4b的露出面的氧化物或有機物。因此，新鮮的金屬表面露出，與之後電鍍處理中析出的金屬之間的密合性提高，結果提高電氣連接可靠性。 After the formation of each via hole, the degumming treatment is performed, and the lead is preferably removed. Residual resin at the time of pore formation. Further, the connection terminals 4a and 4b are subjected to a soft etching treatment, and it is preferable to remove oxides or organic substances on the exposed surfaces of the connection terminals 4a and 4b exposed by the via holes. Therefore, the surface of the fresh metal is exposed, and the adhesion between the metal deposited in the subsequent plating treatment is improved, and as a result, the electrical connection reliability is improved.

其次，如第8圖所示，各導孔內填充導電體，隨 著形成導通孔15，進行金屬層2、7的圖案化，形成導通孔15及圖案化的金屬層2、7構成的配線圖案16。具體而言，根據需要，對各導孔施行除膠或半蝕刻處理，再施行化學鍍銅或電鍍銅等的電鍍處理，各導孔內析出電鍍再填充導電體形成導通孔15。於是，對於配置於絕緣層6的兩面的金屬層2、7，施行蝕刻處理。經由如此的步驟，從絕緣層6的內部往外部延伸的同時，在絕緣層6的表面上形成延伸的配線圖案16。 Next, as shown in Figure 8, each via is filled with a conductor, The via holes 15 are formed, and the metal layers 2 and 7 are patterned to form the via patterns 15 and the wiring patterns 16 formed by the patterned metal layers 2 and 7. Specifically, if necessary, each via hole is subjected to a de-glue or a half-etching treatment, and then electroplating treatment such as electroless copper plating or electroplating copper is performed, and a via hole is deposited in each via hole to form a via hole 15 by re-filling the conductor. Then, an etching process is performed on the metal layers 2 and 7 disposed on both surfaces of the insulating layer 6. Through such a step, an extended wiring pattern 16 is formed on the surface of the insulating layer 6 while extending from the inside to the outside of the insulating layer 6.

在此，從IC零件4的連接端子4a、4b往絕緣層6 的外部延伸的配線圖案16，作用為用以對IC零件4供給電力的導通路徑。另一方面，從保護零件5的兩端往絕緣層6的外部延伸的配線圖案16，與IC零件4不電氣連接。又，配線圖案16，因為保護零件5本體是絕緣體，不作用為導通路徑。即，保護零件5沒電氣作用，保護零件5不形成電氣作用的導通狀態。 Here, from the connection terminals 4a, 4b of the IC component 4 to the insulating layer 6 The externally extending wiring pattern 16 functions as a conduction path for supplying electric power to the IC component 4. On the other hand, the wiring pattern 16 extending from the both ends of the protective member 5 to the outside of the insulating layer 6 is not electrically connected to the IC component 4. Further, the wiring pattern 16 does not function as a conduction path because the body of the protective member 5 is an insulator. That is, the protective member 5 does not have an electrical action, and the protective member 5 does not form an electrically conductive state.

又，本實施例中，表露出電氣連接至IC零件4的 連接端子4a的配線圖案16之面為背面，而表露出電氣連接至IC零件4的連接端子4b的配線圖案16之面為表面，但背面及表面的定義，根據部品內建基板的使用方向也會替換。 Moreover, in this embodiment, the electrical connection to the IC component 4 is exposed. The surface of the wiring pattern 16 of the connection terminal 4a is the back surface, and the surface of the wiring pattern 16 electrically connected to the connection terminal 4b of the IC component 4 is exposed as a surface, but the definition of the back surface and the surface is also based on the direction in which the component built-in substrate is used. Will replace.

經由以上的製造步驟，完成零件內建基板20的形 成。又，實際的零件內建基板20的製造中，複數的零件內建基板20，係製造為1片基板，複數的零件內建基板20形成結束後，切斷上述1片基板，最後同時製造複數的零件內建基板20。 Through the above manufacturing steps, the shape of the part built-in substrate 20 is completed. to make. Further, in the manufacture of the actual component built-in substrate 20, a plurality of component built-in substrates 20 are manufactured as one substrate, and after the formation of the plurality of component built-in substrates 20, the one substrate is cut, and at the same time, a plurality of substrates are simultaneously manufactured. The part has a built-in substrate 20.

第8圖所示的零件內建基板20中，由於內建比脆 弱的IC零件4高的保護零件5，即使對零件內建基板20從外部施加衝擊，衝擊負載施加至高的保護零件5，緩和對脆弱的IC零件4的上述衝擊負載。因此，隨著來自外部的衝擊，可以抑制往IC零件4發生裂開。又，藉由對保護零件5施加大的衝擊負載，即使往保護零件5發生裂開，因為保護零件5本體作用為不會電氣動作的dummy零件(虛設零件)，不影響零件內建基板20本體的特性。 In the part built-in substrate 20 shown in Fig. 8, due to the built-in ratio of brittle The weak protective component 5 of the IC component 4 is high, and even if the component built-in substrate 20 is subjected to an impact from the outside, an impact load is applied to the high protective component 5, and the above-described impact load on the fragile IC component 4 is alleviated. Therefore, cracking to the IC component 4 can be suppressed with an impact from the outside. Moreover, by applying a large impact load to the protective component 5, even if the protective component 5 is cracked, since the body of the protective component 5 acts as a dummy component (dummy component) that does not operate electrically, the body of the component built-in substrate 20 is not affected. Characteristics.

同樣地，即使用對零件內建基板20從外部施加彎 曲應力，由於內建比脆弱的IC零件4高的保護零件5，高的保護零件5受到更大的彎曲應力，脆弱的IC零件4受到比保護零件5受到的彎曲應力緩和的彎曲應力。因此，可以抑制由於從外部施加的彎曲應力往IC零件4發生裂開。 Similarly, the use of the built-in substrate 20 for the part applies a bend from the outside. The curved stress is a bending member which is higher than the fragile IC component 4, and the high protective member 5 is subjected to a larger bending stress, and the fragile IC component 4 is subjected to a bending stress which is relieved by the bending stress received by the protective member 5. Therefore, it is possible to suppress the cracking of the IC component 4 due to the bending stress applied from the outside.

在此，根據應力等緩和的觀點，最好IC零件4的周圍圍繞保護零件5，夾住IC零件4配置2個高的保護零件5也可以，還有鄰接IC零件4埋設1個高的保護零件5也可以。在如此的情況下，也可充分抑制由於衝擊負載及外部應力產生的裂開。 Here, from the viewpoint of relaxation of stress and the like, it is preferable that the periphery of the IC component 4 surrounds the protective component 5, and the two high-protective components 5 are placed between the IC component 4 and the high-side protection of the adjacent IC component 4. Part 5 is also available. In such a case, cracking due to the impact load and external stress can be sufficiently suppressed.

又，零件內建基板20中，IC零件4之外，由於虛設零件的保護零件5埋設在絕緣層6內，與上述保護零件5不存在的零件內建基板比較，可以降低絕緣層6的材料之絕緣樹脂材料的量。換言之，可以降低1個零件內建基板20內所占據的絕緣樹脂材料體積比率。因此，減少絕緣樹脂材料的熱膨脹量，可以加強伴隨絕緣樹脂材料的熱膨脹之應力緩和，還可以抑制往IC零件4發生裂開。於是，由於保護零件5鄰接IC 零件4設置，可以高效率抑制IC零件4外圍的絕緣樹脂材料的熱膨脹。 Further, in the component built-in board 20, in addition to the IC component 4, since the protective component 5 of the dummy component is buried in the insulating layer 6, the material of the insulating layer 6 can be reduced as compared with the component built-in substrate in which the protective component 5 does not exist. The amount of insulating resin material. In other words, the volume ratio of the insulating resin material occupied in the one-piece built-in substrate 20 can be reduced. Therefore, by reducing the amount of thermal expansion of the insulating resin material, stress relaxation accompanying thermal expansion of the insulating resin material can be enhanced, and cracking of the IC component 4 can be suppressed. Thus, because the protective part 5 is adjacent to the IC The component 4 is provided to suppress the thermal expansion of the insulating resin material around the IC component 4 with high efficiency.

又，本實施例的零件內建基板20中，保護零件5 具有比IC零件4高的剛性。因此，可以更有效抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 Moreover, in the component built-in substrate 20 of the present embodiment, the protective component 5 It has a higher rigidity than the IC part 4. Therefore, it is possible to more effectively suppress cracking of the IC component 4 accompanying the above-described impact load, external stress, and thermal expansion of the insulating resin material.

於是，本實施例的零件內建基板20，係內建一個 IC零件4(單晶片)的單晶片內建型基板。特別在本實施例的零件內建基板20中，設定1個零件內建基板20中的IC零件4的裝配面積比例(即，裝配IC零件4及保護零件5的金屬層2表面上IC零件4所占的面積比例)在約30%以下。這是因為，經由縮小上述IC零件4的裝配面積比例，緩和對脆弱的IC零件4之上述衝擊負載、外部應力及絕緣樹脂材料的熱膨脹的影響，抑制IC零件4中發生裂開。 Therefore, the component built-in substrate 20 of the embodiment has a built-in one. Single-chip built-in substrate for IC part 4 (single wafer). In particular, in the component built-in substrate 20 of the present embodiment, the mounting area ratio of the IC component 4 in one component built-in substrate 20 is set (that is, the IC component 4 on the surface of the metal layer 2 on which the IC component 4 and the protective component 5 are mounted is set. The proportion of the area is less than about 30%. This is because the effect of the impact load on the fragile IC component 4, the external stress, and the thermal expansion of the insulating resin material is alleviated by reducing the ratio of the mounting area of the IC component 4, and cracking in the IC component 4 is suppressed.

又，零件內建基板20，不限定於如同本實施例的 單晶片內建型，內建複數的IC零件4也可以。 Moreover, the component built-in substrate 20 is not limited to the present embodiment. Single-chip built-in type, built-in complex IC parts 4 are also available.

本實施例的零件內建基板20中，除了對IC零件4 的導通孔15以外，也形成對保護零件5的導通孔15。對保護零件5的導通孔15，雖然不作用為使保護零件5電氣作用的導通路徑，但根據與保護零件5相同的觀點，可以緩和對脆弱的IC零件4之上述衝擊負載、外部應力及絕緣樹脂材料的熱膨脹的影響。因此，本實施例的零件內建基板20，相較於如同習知沒有保護零件5及連接此的導通孔15的情況，可以更有效抑制IC零件4中發生裂開。 In the component built-in substrate 20 of the present embodiment, except for the IC component 4 In addition to the via holes 15, a via hole 15 for the protective member 5 is also formed. The via hole 15 of the protective member 5 does not act as a conduction path for electrically protecting the protective member 5, but the shock load, external stress, and insulation of the fragile IC component 4 can be alleviated from the same viewpoint as the protective component 5. The effect of thermal expansion of the resin material. Therefore, in the component built-in substrate 20 of the present embodiment, cracking in the IC component 4 can be more effectively suppressed than in the case where the protective component 5 and the via hole 15 connected thereto are not conventionally known.

如上述，根據本實施例的零件內建基板20，往IC零件4的裂開發生率比習知下降，根據其製造方法，零件內建基板20的製造過程中及製造步驟後的各種處理也抑制往IC零件4發生裂開。 As described above, according to the component built-in substrate 20 of the present embodiment, the incidence of cracking to the IC component 4 is lower than that of the prior art, and various processes in the manufacturing process and after the manufacturing process of the component built-in substrate 20 are also performed according to the manufacturing method thereof. Suppression of cracking into the IC part 4 is suppressed.

<變形例> <Modification>

根據本發明的零件內建基板的構造，不限定於上述實施例，也可以是第9圖所示的零件內建基板20’、第10圖所示的零件內建基板20”、或第11圖所示的零件內建基板20'''。以下，說明根據變形例的零件內建基板20’、20”、20'''及其製造方法。在此，第9、10、11圖係根據本發明變形例的零件內建基板的剖面圖。又，關於與上述實施例的零件內建基板20相同的構成，附上相同的符號，省略其說明。 The structure of the component built-in substrate according to the present invention is not limited to the above embodiment, and may be the component built-in substrate 20' shown in Fig. 9, the component built-in substrate 20" shown in Fig. 10, or the eleventh. The component built-in substrate 20''' shown in the figure. Hereinafter, the component built-in substrates 20', 20", 20"' and the manufacturing method thereof according to the modification will be described. Here, the ninth, tenth, and eleventh drawings are cross-sectional views of the component built-in substrate according to a modification of the present invention. The same components as those of the component built-in board 20 of the above-described embodiment are denoted by the same reference numerals and will not be described.

首先，第9圖所示的零件內建基板20’中，貫通接合層3的導通孔15雖然存在，但接合層3所在位置側的相反側，不存在貫通絕緣層6的導通孔15。即，IC零件4，經由貫通接合層3的導通孔15，供給電力至連接端子4a。 First, in the component built-in board 20' shown in Fig. 9, the via hole 15 penetrating the bonding layer 3 exists, but the via hole 15 penetrating the insulating layer 6 does not exist on the side opposite to the side where the bonding layer 3 is located. In other words, the IC component 4 supplies electric power to the connection terminal 4a via the via hole 15 penetrating the bonding layer 3.

因為貫通絕緣層6的導通孔15不存在，接合層3所在位置面的相反側的面上，以圖案化金屬層7形成的配線圖案16’延伸。在此，配線圖案16’，因為不與IC零件4電氣連接，作用為虛設配線。 Since the via hole 15 penetrating the insulating layer 6 does not exist, the wiring pattern 16' formed by the patterned metal layer 7 extends on the surface on the opposite side of the position surface on which the bonding layer 3 is located. Here, the wiring pattern 16' functions as a dummy wiring because it is not electrically connected to the IC component 4.

零件內建基板20’的製造方法，與上述零件內建基板20大致相同，不同點係接合層3所在位置面的相反側的面上不形成第2導孔12及第4導孔14。 The method of manufacturing the component built-in board 20' is substantially the same as that of the component built-in board 20, and the second via hole 12 and the fourth via hole 14 are not formed on the surface on the opposite side of the position where the bonding layer 3 is located.

第9圖所示的變形例的情況下，也因為設置比脆 弱的IC零件4高的保護零件5，與上述實施例相同，可以抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 In the case of the modification shown in Fig. 9, it is also because the setting ratio is brittle. In the same manner as in the above-described embodiment, the protective member 5 having the weak IC component 4 can suppress cracking of the IC component 4 due to the above-described impact load, external stress, and thermal expansion of the insulating resin material.

其次，第10圖所示的零件內建基板20”中，相較於上述實施例的零件內建基板20，只有對連接端子4b的導通孔15不存在，其他的導通孔15存在。即，IC零件4，經由貫通接合層3的導通孔15，供給電力給連接端子4a。 Next, in the component built-in substrate 20" shown in Fig. 10, compared with the component built-in substrate 20 of the above-described embodiment, only the via hole 15 for the connection terminal 4b does not exist, and the other via holes 15 exist. The IC component 4 supplies electric power to the connection terminal 4a via the via hole 15 penetrating the bonding layer 3.

對於IC零件4，因為貫通絕緣層6的導通孔15不存在，接合層3所在位置面的相反側的面上，以圖案化金屬層7形成的配線圖案16’延伸。在此，配線圖案16’，因為不與IC零件4電氣連接，作用為虛設配線。 In the IC component 4, since the via hole 15 penetrating the insulating layer 6 does not exist, the wiring pattern 16' formed by the patterned metal layer 7 extends on the surface on the opposite side of the position surface on which the bonding layer 3 is located. Here, the wiring pattern 16' functions as a dummy wiring because it is not electrically connected to the IC component 4.

零件內建基板20”的製造方法，與上述零件內建基板20大致相同，不同點係接合層3所在位置面的相反側的面上不形成第2導孔12。 The manufacturing method of the component built-in board 20" is substantially the same as that of the component built-in board 20, and the second via hole 12 is not formed on the surface on the opposite side of the position where the bonding layer 3 is located.

第10圖所示的變形例的情況下，也因為設置比脆弱的IC零件4高的保護零件5，與上述實施例相同，可以抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 In the case of the modification shown in Fig. 10, since the protective member 5 which is higher than the weak IC component 4 is provided, as in the above-described embodiment, the above-mentioned impact load, external stress, and thermal expansion of the insulating resin material can be suppressed. The IC part 4 is cracked.

又，關於本變形例的零件內建基板20”，因為IC零件4的一端側(連接端子4b側)設置導通孔15，對IC零件4更不傳導上述衝擊負載等。另一方面，由於在保護零件5的兩端設置導通孔15，相較於只在保護零件5的一端設置導通孔15的情況，更容易吸收上述衝擊負載等。根據上述，關於本變形例的零件內建基板20”，更降低對IC零件4的衝擊負載等的 傳導的同時，因為可以更增加保護零件5中的衝擊負載等的吸收，可以更抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 Further, in the component built-in board 20" of the present modification, since the through hole 15 is provided at one end side (the side of the connection terminal 4b) of the IC component 4, the above-described impact load or the like is not transmitted to the IC component 4. The through hole 15 is provided at both ends of the protective member 5, and the impact load or the like is more easily absorbed than when the through hole 15 is provided only at one end of the protective member 5. According to the above, the component built-in substrate 20 of the present modification is as described above. , to reduce the impact load on the IC part 4, etc. At the same time, the absorption of the impact load or the like in the protective member 5 can be further increased, and the cracking of the IC component 4 due to the above-described impact load, external stress, and thermal expansion of the insulating resin material can be further suppressed.

其次，第11圖所示的零件內建基板20'''中，取代絕緣體構成的保護零件5，在IC零件4的周圍裝載電阻器或電容器等的電子零件作為保護零件25。保護零件25，因為是一般的電子零件，例如其兩端具有銅構成的連接端子25a、25b。在此，導通孔15不連接至保護零件25的連接端子25a、25b，由於以絕緣體(絕緣層6及接合層3)圍繞，電氣絕緣。即，保護零件25沒有電氣作用。 Next, in the component built-in board 20 ′′′ shown in FIG. 11 , an electronic component such as a resistor or a capacitor is placed around the IC component 4 as the protective component 25 instead of the protective component 5 made of an insulator. The protective member 25 is a general electronic component such as connection terminals 25a and 25b made of copper at both ends. Here, the via hole 15 is not connected to the connection terminals 25a, 25b of the protective member 25, and is electrically insulated by being surrounded by an insulator (the insulating layer 6 and the bonding layer 3). That is, the protective part 25 has no electrical effect.

如上述，因為不形成對保護零件25的導通孔15，在絕緣層6的表面上，以圖案化金屬層2或金屬層7形成的配線圖案16’延伸作為虛設配線。 As described above, since the via hole 15 for the protective member 25 is not formed, on the surface of the insulating layer 6, the wiring pattern 16' formed by patterning the metal layer 2 or the metal layer 7 is extended as a dummy wiring.

零件內建基板20'''的製造方法，與上述零件內建基板20大致相同，不同點係不形成對於保護零件25的第3導孔13及第4導孔14。 The manufacturing method of the component built-in board 20''' is substantially the same as that of the component built-in board 20, and the third via hole 13 and the fourth via hole 14 for the protective component 25 are not formed at different points.

第11圖所示的變形例的情況下，也因為設置比脆弱的IC零件4高的保護零件25，與上述實施例相同，可以抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 In the case of the modification shown in Fig. 11, the protective member 25 which is higher than the weak IC component 4 is provided, and as in the above-described embodiment, the above-described impact load, external stress, and thermal expansion of the insulating resin material can be suppressed. The IC part 4 is cracked.

又，電阻器或電容器等構成的保護零件25，因為剛性比IC零件4高，可以有效抑制伴隨上述衝擊負載、外部應力、及絕緣樹脂材料的熱膨脹往IC零件4發生裂開。 Further, since the protective member 25 composed of a resistor or a capacitor is higher in rigidity than the IC component 4, it is possible to effectively suppress cracking of the IC component 4 due to the above-described impact load, external stress, and thermal expansion of the insulating resin material.

又，電阻器或電容器等的電子零件，因為具有各 種尺寸，而且一般廣為流通，藉由選擇比IC零件4高的零件，不用切斷等的加工，可以輕易同時裝載IC零件4。因此，可以加強零件內建基板20'''的製造時間減短及製造成本降低。 Moreover, electronic components such as resistors and capacitors have The size is large and generally circulated, and by selecting a part higher than the IC part 4, the IC part 4 can be easily loaded at the same time without cutting or the like. Therefore, it is possible to enhance the manufacturing time reduction of the component built-in substrate 20''' and the manufacturing cost reduction.

又，本變形例中，雖然不形成對於保護零件25的導通孔15，如果不使保護零件25電氣動作的話，形成導通孔15也可以。例如，對於保護零件25形成包含導通孔15的配線圖案16的情況下，如果絕緣層6的表面上形成的配線圖案16不連接至外部的配線或外部的連接端子等的話，保護零件25不會電氣動作，與本變形例同樣作用為虛設零件。在此情況下，零件內建基板20'''中的保護零件25也可以說不形成電氣作用的導通狀態。 Further, in the present modification, the via hole 15 for the protective member 25 is not formed, and the via hole 15 may be formed without electrically operating the protective member 25. For example, in the case where the protective member 25 is formed with the wiring pattern 16 including the via hole 15, if the wiring pattern 16 formed on the surface of the insulating layer 6 is not connected to the external wiring or the external connection terminal or the like, the protective member 25 does not The electric action acts as a dummy part in the same manner as the present modification. In this case, the protective member 25 in the component built-in substrate 20''' can also be said to be in an electrically conductive state.

又，取代電阻器或電容器，裝載主動元件的MOSFET或積體電路等的主動元件作為保護零件25也可以。在此情況下，也由於裝載比IC零件4高的主動元件作為虛設零件，可以抑制往IC零件4發生裂開。 Further, instead of a resistor or a capacitor, an active element such as a MOSFET or an integrated circuit on which an active device is mounted may be used as the protective member 25. In this case as well, since the active element mounted higher than the IC component 4 is used as a dummy component, cracking of the IC component 4 can be suppressed.

3‧‧‧接合層 3‧‧‧ bonding layer

4‧‧‧IC元件 4‧‧‧IC components

4a、4b‧‧‧連接端子 4a, 4b‧‧‧ connection terminals

5‧‧‧保護元件 5‧‧‧Protection components

6‧‧‧絕緣層 6‧‧‧Insulation

15‧‧‧導通孔 15‧‧‧vias

16‧‧‧配線圖案 16‧‧‧Wiring pattern

20‧‧‧零件內建基板 20‧‧‧Parts built-in substrate

Claims (12)

一種零件內建基板，其特徵在於包括：絕緣層，包含絕緣樹脂材料；至少一IC零件，埋設在上述絕緣層內；配線圖案，電氣連接上述IC零件的連接端子與上述絕緣層的外部；至少一保護零件，埋設在上述絕緣層內，比上述IC零件高且無電氣功能；以及導通孔，從上述絕緣層的外部到達上述保護零件。 A component built-in substrate, comprising: an insulating layer comprising an insulating resin material; at least one IC component embedded in the insulating layer; a wiring pattern electrically connecting the connection terminal of the IC component and the outside of the insulating layer; A protective component embedded in the insulating layer is higher than the IC component and has no electrical function; and a via hole reaches the protective component from the outside of the insulating layer. 如申請專利範圍第1項所述的零件內建基板，其中，上述絕緣層內埋設一個上述IC零件；以及圍繞上述IC零件的周圍配置複數的上述保護零件。 The component built-in board according to the first aspect of the invention, wherein the one or more IC parts are embedded in the insulating layer; and the plurality of protective parts are disposed around the IC component. 如申請專利範圍第1或2項所述的零件內建基板，其中，上述保護零件的剛性比上述IC零件高。 The component built-in substrate according to claim 1 or 2, wherein the protective component has a higher rigidity than the IC component. 如申請專利範圍第1至3項中任一項所述的零件內建基板，其中，上述保護零件由絕緣材料構成。 The part built-in board according to any one of claims 1 to 3, wherein the protective part is made of an insulating material. 如申請專利範圍第1至4項中任一項所述的零件內建基板，其中，上述導通孔，分別從上述絕緣層的表背面往上述絕緣層的內部延伸的同時，到達上述保護零件的端部；以及上述配線圖案只由在上述絕緣層的一端面上形成的金屬層、以及從上述金屬層往上述絕緣層的內部延伸到達位於上述金屬層的形成面側的上述IC零件的連接端子之其他導通孔構成。 The component built-in substrate according to any one of claims 1 to 4, wherein the via hole extends from the front and back surfaces of the insulating layer to the inside of the insulating layer, and reaches the protective member. And a wiring layer formed only by a metal layer formed on one end surface of the insulating layer and extending from the metal layer to the inside of the insulating layer to a connection terminal of the IC component located on a side of the formation surface of the metal layer The other via holes are formed. 如申請專利範圍第1至3項中任一項所述的零件內建基板，其中，上述保護零件係主動元件或被動元件。 The component built-in substrate according to any one of claims 1 to 3, wherein the protective component is an active component or a passive component. 一種零件內建基板的製造方法，包括下列步驟：準備步驟，準備在表面上形成金屬層的支持板；裝載步驟，上述金屬層的表面上經由接合層，分別裝載至少一個IC零件及比上述IC零件高的保護零件；絕緣層形成步驟，層壓絕緣樹脂材料以覆蓋上述金屬層、上述IC零件及上述保護零件，形成埋設上述IC零件及上述保護零件的絕緣層；以及配線圖案形成步驟，形成電氣連接上述IC零件的連接端子與上述絕緣層的外部之配線圖案；其特徵在於：上述配線圖案形成步驟，更包括下列步驟：形成第1導孔步驟，第1導孔貫通上述金屬層及上述接合層，到達位於上述接合層側的上述IC零件的連接端子；第1填充步驟，上述第1導孔內填充導電體；形成第2導孔步驟，第2導孔貫通上述絕緣層，到達位於上述接合層側的相反側之上述IC零件的連接端子；第2填充步驟，上述第2導孔內填充導電體；形成第3導孔步驟，第3導孔貫通上述金屬層及上述接合層，到達位於上述接合層側的上述保護零件的一端；形成第4導孔步驟，第4導孔貫通上述絕緣層，到達位於上述接合層側的相反側之上述保護零件的另一端子；以及第3填充步驟，上述第3導孔及上述第4導孔內填充導電 體；其中，不形成使上述保護零件電氣作用的導通狀態。 A manufacturing method of a component built-in substrate, comprising the steps of: preparing a step of preparing a support plate for forming a metal layer on a surface; loading step, wherein the surface of the metal layer is respectively loaded with at least one IC component via the bonding layer and is more than the IC a protective part having a high part; an insulating layer forming step of laminating an insulating resin material to cover the metal layer, the IC part and the protective part, forming an insulating layer embedding the IC part and the protective part; and a wiring pattern forming step to form a wiring pattern electrically connecting the connection terminal of the IC component and the external wiring layer; wherein the wiring pattern forming step further includes the step of forming a first via hole, the first via hole penetrating the metal layer and the The bonding layer reaches a connection terminal of the IC component located on the bonding layer side; in the first filling step, the first via hole is filled with a conductor; and the second via hole is formed, and the second via hole penetrates the insulating layer to reach the location a connection terminal of the IC component on the opposite side of the bonding layer side; a second filling step, the second guiding The hole is filled with a conductor; a third via hole is formed, the third via hole penetrates the metal layer and the bonding layer, and reaches one end of the protective component on the bonding layer side; and the fourth via hole step, the fourth via hole is formed Passing through the insulating layer to reach the other end of the protective component on the opposite side of the bonding layer side; and in the third filling step, the third via hole and the fourth via hole are filled with a conductive a body in which no conductive state is caused to electrically act on the protective member. 如申請專利範圍第7項所述的零件內建基板的製造方法，其中，上述裝載步驟中，只裝載1個上述IC零件，圍繞上述1個IC零件的周圍配置裝載複數的上述保護零件。 The method of manufacturing a component-incorporated substrate according to claim 7, wherein in the loading step, only one of the IC components is mounted, and a plurality of the protective components are placed around the one of the IC components. 如申請專利範圍第7或8項所述的零件內建基板的製造方法，其中，上述保護零件的剛性比上述IC零件高。 The method of manufacturing a component built-in substrate according to claim 7 or 8, wherein the protective component has a higher rigidity than the IC component. 如申請專利範圍第7至9項中任一項所述的零件內建基板的製造方法，其中，上述保護零件由絕緣材料構成。 The method of manufacturing a component built-in substrate according to any one of claims 7 to 9, wherein the protective component is made of an insulating material. 如申請專利範圍第7至9項中任一項所述的零件內建基板的製造方法，其中，上述保護零件係主動元件或被動元件。 The method of manufacturing a component built-in substrate according to any one of claims 7 to 9, wherein the protective component is an active component or a passive component. 如申請專利範圍第7至11項中任一項所述的零件內建基板的製造方法，其中，上述配線圖案形成步驟中，對上述金屬層施行圖案化，在上述絕緣層的表面上延伸上述配線圖案。 The method of manufacturing a component-embedded substrate according to any one of claims 7 to 11, wherein in the wiring pattern forming step, the metal layer is patterned to extend the surface of the insulating layer. Wiring pattern.
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