TW201507807A - A chemical mechanical polishing conditioner made from woven preform - Google Patents

A chemical mechanical polishing conditioner made from woven preform Download PDF

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Publication number
TW201507807A
TW201507807A TW102129453A TW102129453A TW201507807A TW 201507807 A TW201507807 A TW 201507807A TW 102129453 A TW102129453 A TW 102129453A TW 102129453 A TW102129453 A TW 102129453A TW 201507807 A TW201507807 A TW 201507807A
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Taiwan
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woven
chemical mechanical
mechanical polishing
substrate
abrasive particles
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TW102129453A
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Chinese (zh)
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Chia-Chun Wang
Chia-Feng Chiu
Wen-Jen Liao
Chung-Yi Cheng
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Kinik Co
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Priority to TW102129453A priority Critical patent/TW201507807A/en
Priority to US14/148,632 priority patent/US20150050871A1/en
Publication of TW201507807A publication Critical patent/TW201507807A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/10Devices or means for dressing or conditioning abrasive surfaces of travelling flexible backings coated with abrasives; Cleaning of abrasive belts

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

The present invention relates to a chemical mechanical polishing conditioner made from woven preform, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particle placed on the bonding layer; wherein the bonding layer is formed by heat and cure a woven preform, and the plurality of abrasive particle fixed to woven preform in advance. Therefore, the present invention can provide the bonding layer with a better flexibility by the woven preform, and improve the previous problem that resin residue in powdered bonding layer, or a sheeted bonding layer causes thermal cracking or thermal deformation during the heating and curing process, and thus the polishing performance and service time of the chemical mechanical polishing conditioner.

Description

利用編織預形體製作之化學機械研磨修整器 Chemical mechanical polishing dresser made of woven preform

本發明係關於一種化學機械研磨修整器,尤指一種利用編織預形體製作之化學機械研磨修整器。 The present invention relates to a chemical mechanical polishing dresser, and more particularly to a chemical mechanical polishing dresser made of a woven preform.

化學機械研磨(Chemical Mechanical Polishing,CMP)係為各種產業中常見之研磨製程。利用化學研磨製程可研磨各種物品的表面,包括陶瓷、矽、玻璃、石英、或金屬的晶片等。此外,隨著積體電路發展迅速,因化學機械研磨可達到大面積平坦化之目的,故為半導體製程中常見的晶圓平坦化技術之一。 Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing.

在半導體之化學機械研磨過程中,係利用研磨墊(Pad)對晶圓(或其它半導體元件)接觸,並視需要搭配使用研磨液,使研磨墊透過化學反應與物理機械利以移除晶圓表面之雜質或不平坦結構;當研磨墊使用一定時間後,由於研磨過程所產生的研磨屑積滯於研磨墊之表面而造成研磨效果及效率降低,因此,可利用修整器(conditioner)對研 磨墊表面磨修,使研磨墊之表面再度粗糙化,並維持在最佳的研磨狀態。然而,在修整器之製備過程中,需要將研磨顆粒及結合層混合形成之研磨層設置於基板表面,並經由硬焊或燒結等硬化方式使研磨層固定結合於基板表面。 In the chemical mechanical polishing process of semiconductors, the wafers (or other semiconductor components) are contacted by a polishing pad (Pad), and the polishing liquid is used in combination with the polishing pad to remove the wafer by chemical reaction and physical mechanical advantage. Impurity or uneven structure on the surface; when the polishing pad is used for a certain period of time, the grinding effect and efficiency are reduced due to the accumulation of grinding debris generated by the grinding process on the surface of the polishing pad, so the conditioner can be used The surface of the sanding pad is ground to re-roughen the surface of the polishing pad and maintain the optimum grinding state. However, in the preparation process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is required to be disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering.

目前化學機械研磨修整器之製作方法中,主要都是利用粉末狀結合層(即,利用金屬粉末或焊料合金粉末作為結合層)或片狀結合層(即,利用金屬或焊料粉末經由真空擠壓形成為結合層薄片);惟在結合層(或,研磨層)之硬化過程中,由於粉末狀結合層經常需要額外添加黏著劑(例如,有機樹脂),使粉末狀結合層能夠形成半固化之片狀預形體,然而,該黏著劑在加熱硬化過程中常會殘留於結合層內,並造成結合層與研磨顆粒或基板間之結合強度下降,進而破壞化學機械研磨修整器的品質及性能;另外,由於片狀結合層為經過真空擠壓處理而成型,使得片狀結合層的可撓性不佳,並在加熱硬化過程中常會出現熱裂痕之缺陷,進而影響化學機械研磨修整器之研磨效率及使用壽命。 At present, in the manufacturing method of the chemical mechanical polishing dresser, the powder-like bonding layer (that is, using metal powder or solder alloy powder as a bonding layer) or a sheet-like bonding layer (ie, using a metal or solder powder by vacuum extrusion) is mainly used. Formed as a bonding layer sheet; only in the hardening process of the bonding layer (or the polishing layer), since the powdery bonding layer often requires an additional adhesive (for example, an organic resin), the powdery bonding layer can be formed into a semi-cured layer. a sheet-like preform, however, the adhesive often remains in the bonding layer during heat hardening, and the bonding strength between the bonding layer and the abrasive particles or the substrate is lowered, thereby deteriorating the quality and performance of the chemical mechanical polishing dresser; Since the sheet-like bonding layer is formed by vacuum extrusion treatment, the flexibility of the sheet-like bonding layer is not good, and defects of thermal cracking often occur in the heat hardening process, thereby affecting the polishing efficiency of the chemical mechanical polishing dresser. And service life.

已知技術中,如中華民國公告專利第M323370號,係揭示一種具排屑之雙面砂布結構,尤指針對習式只能單面研磨的砂布會迅速降低研磨效率,及加速砂布結構劣化縮短使用壽命等缺點改良之創新結構;係包含一片由縱橫向織線織成具網孔之網層,於前、後側表面結合金剛砂層成為具有排屑網孔之雙面砂布;俾於其一側表面與一纖維布層的固定片結合,組成前後兩側可由固定片輪流結 合於研磨輪之雙面砂布,達到使用壽命雙倍延長外;並可由排屑網孔順暢排除研磨屑粒避免阻塞金鋼砂粒間隙,而維持較佳研磨銳利度與研磨效率;又避免因研磨的溫度升高造成砂布變質,延長砂布之耐用壽命具多重進步達成者。 In the known technology, for example, the Republic of China Announcement Patent No. M323370 discloses a double-sided abrasive cloth structure with chip discharge, especially for the abrasive cloth which can only be single-sidedly polished, which can quickly reduce the grinding efficiency and accelerate the deterioration of the abrasive cloth structure. An innovative structure with improved shortcomings such as service life; comprising a mesh layer woven into a mesh with longitudinal and transverse woven threads, and a diamond-coated layer on the front and rear side surfaces to form a double-sided abrasive cloth having a chipping mesh; The side surface is combined with a fixing piece of a fiber cloth layer, and the front and rear sides can be connected by a fixed piece. The double-sided abrasive cloth combined with the grinding wheel can double the service life; and the grinding debris can be smoothly removed from the chip mesh to avoid blocking the gap of the gold steel sand while maintaining better grinding sharpness and grinding efficiency; The increase in temperature causes the emery cloth to deteriorate, and the durability of the emery cloth is extended to achieve multiple advances.

此外,另一中國大陸公告專利第201044950號,係揭示一種切斷砂輪,尤其是整體成型固化、用於切割金屬材料的樹脂切割砂輪。本實用新型呈圓盤形,中心開孔,由磨粒、有機樹脂、玻璃纖維網布和短玻璃纖維絲構成,磨粒和短玻璃纖維絲都均勻分佈於有機樹脂內,玻璃纖維網布平行於兩端面沿軸向均勻分佈於有機樹脂內,磨粒露出兩個端面之上;有機樹脂選用酚醛樹脂,磨粒選用棕剛玉、白剛玉、鉻剛玉、鋯剛玉、鐠釹剛玉、黑碳化矽、綠碳化矽、碳化硼、氮化硼、金剛砂和金剛石中的任意一種的顆粒。本實用新型具有大尺寸、高強度、熱切割的特點,能適用於高速切割大尺寸金屬材料,且使用壽命長。 In addition, another Chinese mainland publication No. 201044950 discloses a resin cutting wheel for cutting a grinding wheel, in particular, integrally formed and solidified for cutting metal materials. The utility model has a disc shape and a central opening, and is composed of abrasive grains, an organic resin, a glass fiber mesh cloth and short glass fiber filaments. The abrasive grains and the short glass fiber filaments are uniformly distributed in the organic resin, and the glass fiber mesh is parallel. The two end faces are uniformly distributed in the organic resin in the axial direction, and the abrasive grains are exposed on both end faces; the organic resin is selected from phenolic resin, and the abrasive grains are selected from brown corundum, white corundum, chrome corundum, zirconium corundum, samarium corundum, black carbonized strontium. Particles of any of green carbonized niobium, boron carbide, boron nitride, corundum, and diamond. The utility model has the characteristics of large size, high strength and hot cutting, and can be applied to high-speed cutting large-sized metal materials, and has a long service life.

然而,上述紗布結構或切斷砂輪中,主要都是藉由一結合劑(如,有機樹脂)將磨粒或鑽石顆粒固定於纖維布或纖維網之表面,然而,纖維布或纖維網在加熱硬化後仍然為一多孔隙的網狀結構,因此,若直接利用該纖維布或纖維網作為化學機械研磨修整器之結合層,將會造成化學機械研磨修整器的整體機械強度不足,並使其研磨性能下降。 However, in the gauze structure or the cutting wheel, the abrasive grains or the diamond particles are mainly fixed to the surface of the fiber cloth or the fiber web by a bonding agent (for example, an organic resin), however, the fiber cloth or the fiber web is heated. After hardening, it is still a porous network structure. Therefore, if the fiber cloth or fiber mesh is directly used as a bonding layer of the chemical mechanical polishing dresser, the overall mechanical strength of the chemical mechanical polishing dresser will be insufficient, and The grinding performance is degraded.

因此,目前急需發展出一種具有可撓性之化學機械研磨修整器,其除了可以解決化學機械研磨修整器之研磨層在硬化成型過程中所產生的殘膠或熱裂痕問題,進而提升化學機械研磨修整器之結合強度及研磨性能。 Therefore, there is an urgent need to develop a flexible chemical mechanical polishing dresser, which can solve the problem of residual glue or thermal cracking generated in the hardening molding process of the polishing layer of the chemical mechanical polishing dresser, thereby improving chemical mechanical polishing. The bonding strength and grinding performance of the dresser.

本發明之主要目的係在提供一種利用編織預形體製作之化學機械研磨修整器,俾能有效的解決化學機械研磨修整器在硬化成型過程中所產生之殘膠或熱裂痕問題,以達到化學機械研磨修整器之表面結合強度;此外,由於本發明將該編織預形體加熱硬化而形成結合層,故可藉由該編織預形體具有更優異的可撓性,同時提供化學機械研磨修整器具有更優異的結合強度及研磨性能。 The main object of the present invention is to provide a chemical mechanical polishing dresser made of a woven preform, which can effectively solve the problem of residual glue or thermal crack generated during the hardening process of the chemical mechanical polishing dresser to achieve chemical mechanical The surface bonding strength of the polishing dresser; in addition, since the woven preform is heat-hardened to form a bonding layer according to the present invention, the woven preform can have more excellent flexibility while providing a chemical mechanical polishing dresser having more Excellent bonding strength and grinding performance.

為達成上述目的,本發明之利用編織預形體製作之化學機械研磨修整器,包括:一基板;一結合層,該結合層設置於該基板上;以及複數個研磨顆粒,該些研磨顆粒埋設於該結合層,且該些研磨顆粒藉由該結合層以固定於該基板上;其中,該結合層使一編織預形體藉由一加熱硬化而形成,且可透過一黏著劑或擠壓方式,使該些研磨顆粒為預先固定於該編織預形體。此外,在前述本發明之利用編織預形體製作之化學機械研磨修整器中,該編織預形體之熔點為低於該加熱硬化之溫度,因此,該編織預形體在加熱硬化過程後將由原有的多孔隙網狀結構形成一 緻密結構之結合層,使其同時具備有網狀結構之可撓性及緻密結構之結合強度。 In order to achieve the above object, a chemical mechanical polishing conditioner made by using a woven preform of the present invention comprises: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the plurality of abrasive particles The bonding layer, and the abrasive particles are fixed on the substrate by the bonding layer; wherein the bonding layer forms a woven preform by heat hardening, and is permeable to an adhesive or a squeezing method. The abrasive particles are pre-fixed to the woven preform. Further, in the chemical mechanical polishing conditioner manufactured by the present invention using the woven preform, the melting point of the woven preform is lower than the temperature of the heat hardening, and therefore, the woven preform will be original after the heat hardening process. Multi-porous network structure The bonding layer of the dense structure has the bonding strength of the flexible and dense structure of the mesh structure.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該編織預形體可含有一第一方向編織基材及一第二方向編織基材,其中,在相鄰的該第一方向編織基材及該第二方向編織基材間可形成一編織孔洞。此外,在前述本發明之利用編織預形體製作之化學機械研磨修整器中,該編織孔洞之最大直徑可為該些研磨顆粒之直徑的0.1至5倍,也就是說,該編織孔洞內的研磨顆粒數目可以依據使用者需求或研磨加工的條件而任意變化,其中,該編織孔洞內可含有1至5個該些研磨顆粒。於本發明之一態樣中,該編織孔洞內可含有1個研磨顆粒。於本發明之另一態樣中,該編織孔洞內可含有3個研磨顆粒。 In the CMP abrasive dresser made of the woven preform of the present invention, the woven preform may include a first direction woven substrate and a second directional woven substrate, wherein the first direction is woven in the adjacent direction A woven hole may be formed between the substrate and the second direction woven substrate. Further, in the above-described chemical mechanical polishing dresser made of the woven preform of the present invention, the maximum diameter of the woven hole may be 0.1 to 5 times the diameter of the abrasive particles, that is, the grinding in the woven hole The number of particles may be arbitrarily changed depending on the needs of the user or the conditions of the grinding process, wherein the woven holes may contain 1 to 5 of the abrasive particles. In one aspect of the invention, the woven hole may contain one abrasive particle. In another aspect of the invention, the woven hole may contain three abrasive particles.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該些研磨顆粒可位於該編織預形體之表面上,或該些研磨顆粒可位於該編織預形體之該編織孔洞內,也就是說,該些研磨顆粒與該編織孔洞可具有不同或相同之排列方式,或是藉由調整編織孔洞之最大直徑及該些研磨顆粒之直徑以控制該些研磨顆粒可位於該編織預形體之表面上或編織孔洞內。此外,在前述本發明之利用編織預形體製作之化學機械研磨修整器中,該些研磨顆粒之排列方式可以依據使用者需求或研磨加工的條件而任意變化,其中,該些研磨顆粒可具有一圖案化排列或一不規則排列。 In the CMP abrasive dresser made by the woven preform of the present invention, the abrasive particles may be located on the surface of the woven preform, or the abrasive particles may be located in the woven hole of the woven preform, that is, Said abrasive particles and the woven holes may have different or the same arrangement, or by adjusting the maximum diameter of the woven holes and the diameter of the abrasive particles to control the abrasive particles to be located on the surface of the woven preform Upper or braided holes. In addition, in the chemical mechanical polishing dresser manufactured by using the woven preform of the present invention, the arrangement of the abrasive particles may be arbitrarily changed according to user requirements or conditions of the grinding process, wherein the abrasive particles may have one Patterned or irregularly arranged.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該編織預形體可含有一第一方向編織基材及一第二方向編織基材,其中,該第一方向編織基材及該第二方向編織基材間之夾角為10至90度。於本發明之一態樣中,該第一方向編織基材及該第二方向編織基材間之夾角為90度。於本發明之另一態樣中,該第一方向編織基材及該第二方向編織基材間之夾角為60度。於本發明之又一態樣中,該第一方向編織基材及該第二方向編織基材間之夾角為45度。 In the chemical mechanical polishing conditioner manufactured by using the woven preform of the present invention, the woven preform may include a first direction woven substrate and a second directional woven substrate, wherein the first directional woven substrate and the woven substrate The angle between the woven substrates in the second direction is 10 to 90 degrees. In one aspect of the invention, the angle between the first direction woven substrate and the second directional woven substrate is 90 degrees. In another aspect of the invention, the angle between the first direction woven substrate and the second directional woven substrate is 60 degrees. In still another aspect of the invention, the angle between the first direction woven substrate and the second directional woven substrate is 45 degrees.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該編織預形體除了可含有一第一方向編織基材及一第二方向編織基材之外,該編織預形體更包括一第三方向編織基材或一第四方向編織基材,其中,每一方向之編織基材可位在不同的方向上,且彼此形成一夾角或由不同方向之編織基材構成一編織孔洞。於本發明之一態樣中,該編織預形體可含有第一方向編織基材及第二方向編織基材。於本發明之另一態樣中,該編織預形體可含有第一方向編織基材、第二方向編織基材及第三方向編織基材。於本發明之又一態樣中,該編織預形體可含有第一方向編織基材、第二方向編織基材、第三方向編織基材及第四方向編織基材。此外,在前述本發明之利用編織預形體製作之化學機械研磨修整器中,該編織預形體的堆疊層數可視使用者需求或研磨加工的條件而任意變化,其中,該編織預形體可為一單層編織結構或一多層編織結構。於本 發明之一態樣中,該編織預形體可為一單層編織結構,並可依據研磨顆粒的尺寸大小而任意調整該編織預形體之厚度。 In the CMP polishing device made by the woven preform of the present invention, the woven preform includes a first direction woven substrate and a second directional woven substrate, and the woven preform further includes a first A three-direction woven substrate or a fourth direction woven substrate, wherein the woven substrates in each direction can be positioned in different directions and form an angle with each other or a woven hole formed by the woven substrate in different directions. In one aspect of the invention, the woven preform can comprise a first direction woven substrate and a second directional woven substrate. In another aspect of the invention, the woven preform can include a first direction woven substrate, a second directional woven substrate, and a third directional woven substrate. In still another aspect of the present invention, the woven preform may include a first direction woven base material, a second direction woven base material, a third direction woven base material, and a fourth direction woven base material. In addition, in the chemical mechanical polishing dresser manufactured by using the woven preform of the present invention, the number of stacked layers of the woven preform may be arbitrarily changed according to user requirements or conditions of the grinding process, wherein the woven preform may be one A single layer woven structure or a multilayer woven structure. Yu Ben In one aspect of the invention, the woven preform can be a single layer woven structure and the thickness of the woven preform can be arbitrarily adjusted depending on the size of the abrasive particles.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該些研磨顆粒可為人造鑽石、天然鑽石、多晶鑽石、或立方氮化硼;在本發明之一較佳態樣中,該些研磨顆粒可為鑽石。此外,在本發明之利用編織預形體製作之化學機械研磨修整器中,該些研磨顆粒之粒徑可為30微米至600微米;在本發明之一較佳態樣中,該些研磨顆粒之粒徑可為200微米。 In the CMP abrasive dresser made of the woven preform of the present invention, the abrasive particles may be synthetic diamond, natural diamond, polycrystalline diamond, or cubic boron nitride; in a preferred aspect of the present invention, The abrasive particles can be diamonds. Further, in the chemical mechanical polishing conditioner manufactured by using the woven preform of the present invention, the abrasive particles may have a particle diameter of 30 μm to 600 μm; in a preferred aspect of the present invention, the abrasive particles are The particle size can be 200 microns.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該結合層或編織預形體之組成可依據研磨加工需求及研磨加工條件而任意變化,包括:陶瓷材料、硬焊材料、電鍍材料、金屬材料、或高分子材料,但本發明並未侷限於此。於本發明之另一態樣中,該編織預形體為一陶瓷材料所形成,例如,藉由一玻璃纖維或碳纖維形成之玻璃纖維布或碳纖維布作為該編織預形體。於本發明之另一態樣中,該編織預形體為一硬焊材料所形成,例如,將一鎳基金屬焊料藉由壓製方式以形成焊料編織預形體,其中,該硬焊材料為至少一選自由鐵、鈷、鎳、鉻、錳、矽、鋁、及其組合所組成之群組。於本發明之又一態樣中,該編織預形體為一高分子材料所形成,例如,將一鎳基金屬焊料藉由射出成型或擠壓成型之方式以形成高分子材料 編織預形體,其中,該高分子材料可為環氧樹脂、聚酯樹脂、聚丙烯酸樹脂、酚醛樹脂。 In the chemical mechanical polishing dresser manufactured by using the woven preform of the present invention, the composition of the bonding layer or the woven preform can be arbitrarily changed according to the grinding processing demand and the grinding processing conditions, including: ceramic material, brazing material, plating material A metal material or a polymer material, but the invention is not limited thereto. In another aspect of the invention, the woven preform is formed from a ceramic material, for example, a glass fiber cloth or a carbon fiber cloth formed of a glass fiber or carbon fiber as the woven preform. In another aspect of the invention, the woven preform is formed of a brazing material, for example, a nickel-based metal solder is pressed to form a solder woven preform, wherein the brazing material is at least one A group consisting of iron, cobalt, nickel, chromium, manganese, cerium, aluminum, and combinations thereof is selected. In still another aspect of the present invention, the woven preform is formed of a polymer material, for example, a nickel-based metal solder is formed by injection molding or extrusion molding to form a polymer material. The woven preform may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin.

在本發明之利用編織預形體製作之化學機械研磨修整器中,該基板可為一不鏽鋼基板,以提供化學機械研磨修整器具有一優異的機械強度及抗化學腐蝕性。此外,在前述本發明之利用編織預形體製作之化學機械研磨修整器中,該基板之表面形狀可視使用者需求或研磨加工的條件而任意變化,其中,該基板表面可為一平面、一凸曲面、或一凹曲面。於本發明之一態樣中,該基板表面可為一平面外型。於本發明之另一態樣中,該基板表面可為一凸曲面外型。於本發明之又一態樣中,該基板表面可為一凹曲面外型。 In the CMP polishing device made of the woven preform of the present invention, the substrate may be a stainless steel substrate to provide a chemical mechanical polishing dresser having an excellent mechanical strength and chemical resistance. In addition, in the chemical mechanical polishing dresser manufactured by using the woven preform of the present invention, the surface shape of the substrate may be arbitrarily changed according to user requirements or conditions of polishing processing, wherein the surface of the substrate may be a plane or a convex surface. A curved surface, or a concave surface. In one aspect of the invention, the surface of the substrate can be a planar shape. In another aspect of the invention, the surface of the substrate may be a convex curved surface. In still another aspect of the invention, the surface of the substrate may be a concave curved surface.

綜上所述,根據本發明之利用編織預形體製作之化學機械研磨修整器,可有效的解決化學機械研磨修整器在硬化成型過程中所產生之殘膠或熱裂痕問題,並藉由該編織預形體具有更優異的可撓性,同時提供化學機械研磨修整器具有更優異的結合強度及研磨性能。 In summary, the chemical mechanical polishing dresser made by using the woven preform according to the present invention can effectively solve the problem of residual glue or thermal crack generated during the hardening molding process of the chemical mechanical polishing dresser, and by the weaving The preform has superior flexibility, while providing a chemical mechanical polishing dresser with superior bonding strength and grinding performance.

10,20,30,70,80‧‧‧基板 10,20,30,70,80‧‧‧substrate

11,21,31,71,81‧‧‧結合層 11,21,31,71,81‧‧‧ bonding layer

12,22,32,42,52,62,72,82‧‧‧研磨顆粒 12,22,32,42,52,62,72,82‧‧‧ abrasive particles

13,23‧‧‧裂痕 13,23‧‧‧ crack

310,41,51,61‧‧‧編織預形體 310,41,51,61‧‧‧woven preforms

411,511,611‧‧‧第一方向編織基材 411,511,611‧‧‧First direction weaving substrate

412,512,612‧‧‧第二方向編織基材 412,512,612‧‧‧Second direction braided substrate

圖1A至圖1C係為比較例1之習知化學機械研磨修整器之製作流程圖。 1A to 1C are flowcharts showing the fabrication of a conventional chemical mechanical polishing conditioner of Comparative Example 1.

圖2A至圖2B係為比較例2之習知化學機械研磨修整器之製作流程圖。 2A to 2B are flowcharts showing the fabrication of a conventional chemical mechanical polishing conditioner of Comparative Example 2.

圖3A至圖3C係為本發明實施例1之利用編織預形體製作之化學機械研磨修整器之製作流程圖。 3A to 3C are flowcharts showing the fabrication of a chemical mechanical polishing conditioner manufactured by using a woven preform according to Embodiment 1 of the present invention.

圖4係為本發明實施例1之編織預形體之示意圖。 Figure 4 is a schematic view of a woven preform of Embodiment 1 of the present invention.

圖5係為本發明實施例2之編織預形體之示意圖。 Figure 5 is a schematic view of a woven preform of Embodiment 2 of the present invention.

圖6係為本發明實施例3之編織預形體之示意圖。 Figure 6 is a schematic view of a woven preform according to Embodiment 3 of the present invention.

圖7及圖8係為本發明實施例4及實施例5之利用編織預形體製作之化學機械研磨修整器之示意圖。 7 and 8 are schematic views of a chemical mechanical polishing conditioner made by using a woven preform according to Embodiment 4 and Embodiment 5 of the present invention.

以下係藉由特定的具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。本發明亦可藉由其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可針對不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。 The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

比較例1 Comparative example 1

請參考圖1A至圖1C,其係為一習知具有片狀結合層之化學機械研磨修整器之製作流程圖。首先,如圖1A及圖1B所示,將複數個研磨顆粒12設置於一結合層11上,並將該結合層11設置於一基板上10,其中,該結合層11為鎳基金屬焊料經由真空壓製所形成之片狀結合層,該基板10為不銹鋼材質,研磨顆粒12為一般常用之人工鑽石,且利用一般習知的佈鑽技術(例如,模板佈鑽)將研磨顆粒12埋設於結合層 11上,並可藉由模板(圖未顯示)控制研磨顆粒12的間距及排列方式。 Please refer to FIG. 1A to FIG. 1C , which is a flow chart of a conventional chemical mechanical polishing dresser having a sheet-like bonding layer. First, as shown in FIG. 1A and FIG. 1B, a plurality of abrasive particles 12 are disposed on a bonding layer 11, and the bonding layer 11 is disposed on a substrate 10, wherein the bonding layer 11 is a nickel-based metal solder via The sheet-like bonding layer formed by vacuum pressing, the substrate 10 is made of stainless steel, and the abrasive particles 12 are generally used artificial diamonds, and the abrasive particles 12 are embedded in the bonding by a conventional cloth drilling technique (for example, a template cloth drilling). Floor 11 and the spacing and arrangement of the abrasive particles 12 can be controlled by a template (not shown).

接著,如圖1C所示,進行一加熱硬化處理,使研磨顆粒12藉由該結合層11而固定於基板10表面,並伴隨著複數個裂痕13形成於該結合層11上。因此,由於該片狀結合層為經過真空擠壓處理而成型,使得片狀結合層的可撓性不佳,並在加熱硬化過程中常會出現熱裂痕之缺陷,進而影響化學機械研磨修整器之研磨效率及使用壽命。 Next, as shown in FIG. 1C, a heat hardening treatment is performed to fix the abrasive particles 12 on the surface of the substrate 10 by the bonding layer 11, and a plurality of cracks 13 are formed on the bonding layer 11. Therefore, since the sheet-like bonding layer is formed by vacuum extrusion treatment, the flexibility of the sheet-like bonding layer is not good, and defects of thermal cracking often occur during heat hardening, thereby affecting the chemical mechanical polishing dresser. Grinding efficiency and service life.

比較例2 Comparative example 2

請參考圖2A至圖2C,其係為另一習知具有粉末狀結合層之化學機械研磨修整器之製作流程圖。首先,如圖2A所示,將一結合層21設置於一基板上20,並將複數個研磨顆粒22設置於該結合層21上,其中,該結合層21為鎳基金屬焊料所形成之粉末狀結合層,該基板20為不銹鋼材質,研磨顆粒22為一般常用之人工鑽石,且利用一般習知的佈鑽技術將研磨顆粒22埋設於結合層21上,並可藉由模板(圖未顯示)控制研磨顆粒22的間距及排列方式。 Please refer to FIG. 2A to FIG. 2C , which are flow diagrams of another conventional chemical mechanical polishing dresser having a powdered bonding layer. First, as shown in FIG. 2A, a bonding layer 21 is disposed on a substrate 20, and a plurality of abrasive particles 22 are disposed on the bonding layer 21. The bonding layer 21 is a powder formed of a nickel-based metal solder. The substrate 20 is made of stainless steel, and the abrasive particles 22 are commonly used artificial diamonds, and the abrasive particles 22 are embedded on the bonding layer 21 by a conventional cloth drilling technique, and can be used by a template (not shown). The spacing and arrangement of the abrasive particles 22 are controlled.

接著,如圖2B所示,進行一加熱硬化處理,使研磨顆粒22藉由該結合層21而固定於基板20表面,並伴隨著複數個裂痕23形成於該結合層21上。因此,由於粉末狀結合層經常需要額外添加黏著劑(例如,有機樹脂),使粉末狀結合層能夠形成半固化之片狀預形體,故該黏著劑在加熱硬化過程中常會殘留於結合層內,並造成結合層與研磨顆粒 或基板間之結合強度下降,進而破壞化學機械研磨修整器的品質及性能。 Next, as shown in FIG. 2B, a heat hardening treatment is performed to fix the abrasive particles 22 on the surface of the substrate 20 by the bonding layer 21, and a plurality of cracks 23 are formed on the bonding layer 21. Therefore, since the powdery bonding layer often requires an additional adhesive (for example, an organic resin) to enable the powdery bonding layer to form a semi-cured sheet-like preform, the adhesive often remains in the bonding layer during heat hardening. And causing the bonding layer and the abrasive particles Or the bonding strength between the substrates is reduced, thereby deteriorating the quality and performance of the chemical mechanical polishing dresser.

實施例1 Example 1

請參考圖3A至圖3C,其係為本發明實施例1之利用編織預形體製作之化學機械研磨修整器之製作流程圖。首先,如圖3A及圖3B所示,將複數個研磨顆粒32預先固定於一編織預形體310上,並將該編織預形體310設置於一基板上30,其中,該編織預形體310為玻璃纖維布所形成之多孔隙網狀結構,該基板30為不銹鋼材質,研磨顆粒32為一般常用之人工鑽石,且利用一般習知的佈鑽技術將研磨顆粒32預先固定於編織預形體310上。 Please refer to FIG. 3A to FIG. 3C , which are flowcharts for fabricating a chemical mechanical polishing dresser made by using a woven preform according to Embodiment 1 of the present invention. First, as shown in FIG. 3A and FIG. 3B, a plurality of abrasive particles 32 are pre-fixed on a woven preform 310, and the woven preform 310 is disposed on a substrate 30, wherein the woven preform 310 is glass. The porous mesh structure formed by the fiber cloth, the substrate 30 is made of stainless steel, the abrasive particles 32 are generally used artificial diamonds, and the abrasive particles 32 are pre-fixed on the woven preform 310 by a conventional cloth drilling technique.

接著,如圖3C所示,進行一加熱硬化處理,使該編織預形體310藉由一加熱硬化而形成一結合層31,其中,該編織預形體310之熔點低於該加熱硬化之溫度,例如,將加熱硬化之溫度升高至2,000℃以上,將玻璃纖維布所形成之編織預形體310由固態轉變為熔融態,並使該編織預形體310在加熱硬化過程後將由原有的多孔隙網狀結構形成一緻密結構之結合層31,使其同時具備有網狀結構之可撓性及緻密結構之結合強度。因此,本發明之利用編織預形體製作之化學機械研磨修整器,將可有效的解決化學機械研磨修整器在硬化成型過程中所產生之殘膠或熱裂痕問題,並藉由該編織預形體具有更優異的可撓性,同時提供化學機械研磨修整器具有更優異的結合強度及研磨性能。 Next, as shown in FIG. 3C, a heat hardening treatment is performed to form a bonding layer 31 by heat curing, wherein the melting point of the woven preform 310 is lower than the temperature of the heat curing, for example. The temperature of the heat-hardening is raised to 2,000 ° C or higher, and the woven preform 310 formed of the glass fiber cloth is converted from a solid state to a molten state, and the woven preform 310 is made of the original porous network after the heat-hardening process. The structure forms a bonding layer 31 of a uniform dense structure, which simultaneously has a bonding strength of a flexible structure and a dense structure having a mesh structure. Therefore, the chemical mechanical polishing dresser made by using the woven preform of the present invention can effectively solve the problem of residual glue or thermal crack generated in the hardening molding process of the chemical mechanical polishing dresser, and the woven preform has More excellent flexibility, while providing a chemical mechanical polishing dresser with superior bonding strength and grinding performance.

請一併參考圖4,其係為本發明實施例1之編織預形體之示意圖。如圖4所示,該編織預形體41(即對應圖3A之編織預形體310)含有一第一方向編織基材411及一第二方向編織基材412,且相鄰的該第一方向編織基材411及該第二方向編織基材412間係形成一編織孔洞(圖未顯示),其中,該些研磨顆粒42位於該編織預形體41之編織孔洞內,使該些研磨顆粒32具有一陣列式的圖案化排列,且該編織孔洞之最大直徑與該些研磨顆粒42之直徑約略相等,使得每一編織孔洞內含有1個研磨顆粒42。 Please refer to FIG. 4 together, which is a schematic view of the woven preform of Embodiment 1 of the present invention. As shown in FIG. 4, the woven preform 41 (ie, the woven preform 310 corresponding to FIG. 3A) includes a first directional woven substrate 411 and a second directional woven substrate 412, and the first woven fabric is woven adjacent to the first direction. A woven hole (not shown) is formed between the substrate 411 and the second direction woven substrate 412, wherein the abrasive particles 42 are located in the woven hole of the woven preform 41, so that the abrasive particles 32 have a The arrayed pattern is arranged, and the maximum diameter of the woven holes is approximately equal to the diameter of the abrasive particles 42 such that each woven hole contains 1 abrasive particle 42.

此外,該第一方向編織基材411及該第二方向編織基材412間係形成一夾角A,該夾角A的角度可視使用者需求或研磨加工的條件而任意變化,於此實施例1中,第一方向編織基材411及該第二方向編織基材412係以一相互垂直之方式排列,即該夾角A為90度,使該些研磨顆粒42預先固定於具有90度夾角之編織孔洞內。 In addition, the first direction woven base material 411 and the second direction woven base material 412 form an angle A, and the angle of the angle A can be arbitrarily changed according to user requirements or conditions of the grinding process. In the first embodiment, The first direction woven base material 411 and the second direction woven base material 412 are arranged in a mutually perpendicular manner, that is, the angle A is 90 degrees, and the abrasive particles 42 are preliminarily fixed to the woven holes having an angle of 90 degrees. Inside.

實施例2 Example 2

請參考圖5,係為本發明實施例2之編織預形體之示意圖。實施例2與前述實施例1所述之化學機械研磨修整器及其製作流程大致相同,除了在該第一方向編織基材及該第二方向編織基材間夾角A之角度不同。在實施例2中,該編織預形體51含有一第一方向編織基材511及一第二方向編織基材512,且相鄰的該第一方向編織基材511及該第二方向編織基材512間係形成一編織孔洞(圖未顯示),其中,該 些研磨顆粒52位於該編織預形體51之編織孔洞內,使該些研磨顆粒52具有一等間距的圖案化排列,且該編織孔洞之最大直徑與該些研磨顆粒52之直徑約略相等,使得每一編織孔洞內含有1個研磨顆粒52。 Please refer to FIG. 5, which is a schematic view of a woven preform according to Embodiment 2 of the present invention. The second embodiment is substantially the same as the chemical mechanical polishing dresser described in the first embodiment and the manufacturing process thereof, except that the angle between the first direction woven base material and the second direction woven base material is different. In the second embodiment, the woven preform 51 includes a first directional woven substrate 511 and a second directional woven substrate 512, and the first directional woven substrate 511 and the second directional woven substrate are adjacent to each other. 512 forms a woven hole (not shown), wherein The abrasive particles 52 are located in the woven holes of the woven preform 51 such that the abrasive particles 52 have an equally spaced patterning arrangement, and the maximum diameter of the woven holes is approximately equal to the diameter of the abrasive particles 52, such that each A woven hole contains 1 abrasive particle 52.

此外,該第一方向編織基材511及該第二方向編織基材512間係形成一夾角B,該夾角B的角度可視使用者需求或研磨加工的條件而任意變化,於此實施例2中,第一方向編織基材511及該第二方向編織基材512係以一45度之方式排列,即該夾角B為45度,使該些研磨顆粒52預先固定於具有45度夾角之編織孔洞內。 In addition, the first direction woven base material 511 and the second direction woven base material 512 form an angle B, and the angle of the angle B can be arbitrarily changed according to user requirements or conditions of the grinding process. In the second embodiment, The first direction woven base material 511 and the second direction woven base material 512 are arranged at a 45 degree angle, that is, the angle B is 45 degrees, so that the abrasive particles 52 are fixed in advance to the woven hole having an angle of 45 degrees. Inside.

實施例3 Example 3

請參考圖6,係為本發明實施例3之編織預形體之示意圖。實施例3與前述實施例1所述之化學機械研磨修整器及其製作流程大致相同,除了在該些研磨顆粒位於該編織預形體之位置不同。在實施例3中,該編織預形體61含有一第一方向編織基材611及一第二方向編織基材612,且相鄰的該第一方向編織基材611及該第二方向編織基材612間係形成一編織孔洞(圖未顯示),其中,不同於實施例1中,該些研磨顆粒位於該編織預形體之編織孔洞內,在此實施例3中,該些研磨顆粒62位於該編織預形體61之表面,並可藉由一般習知的佈鑽技術,使該些研磨顆粒62預先固定於編織預形體61之第一方向編織基材611或第二方向編織基材612上,且該些研磨顆粒62具有一陣列式的圖案化排列。 Please refer to FIG. 6, which is a schematic view of a woven preform according to Embodiment 3 of the present invention. Embodiment 3 is substantially the same as the chemical mechanical polishing conditioner described in the foregoing Embodiment 1, and the manufacturing process thereof, except that the abrasive particles are located at the position of the woven preform. In the embodiment 3, the woven preform 61 includes a first directional woven substrate 611 and a second directional woven substrate 612, and the first directional woven substrate 611 and the second directional woven substrate are adjacent to each other. 612 forms a woven hole (not shown), wherein, unlike Embodiment 1, the abrasive particles are located in the woven hole of the woven preform. In Embodiment 3, the abrasive particles 62 are located in the woven hole. The surface of the preform 61 is woven, and the abrasive particles 62 are pre-fixed to the first direction woven substrate 611 or the second directional woven substrate 612 of the woven preform 61 by a conventional cloth drilling technique. And the abrasive particles 62 have an arrayed patterning arrangement.

實施例4及實施例5 Example 4 and Example 5

請參考圖7及圖8,係為本發明實施例4及實施例5之利用編織預形體製作之化學機械研磨修整器之示意圖。實施例4及實施例5與前述實施例1所述之化學機械研磨修整器及其製作流程大致相同,除了在該基板之表面形狀不同。不同於實施例1之該基板表面為一平面外型,且該化學機械研磨修整器之工作面(即,該些研磨顆粒所構成之研磨表面)亦為一平面外型,實施例4及實施例5之基板或該化學機械研磨修整器之工作面為一非平面外型。 Please refer to FIG. 7 and FIG. 8 , which are schematic diagrams of a chemical mechanical polishing dresser made by using a woven preform according to Embodiment 4 and Embodiment 5 of the present invention. The fourth embodiment and the fifth embodiment are substantially the same as the chemical mechanical polishing conditioner described in the first embodiment, and the manufacturing process thereof is different except that the surface shape of the substrate is different. The surface of the substrate different from the embodiment 1 is a planar shape, and the working surface of the chemical mechanical polishing conditioner (that is, the polishing surface formed by the abrasive particles) is also a planar shape, and the embodiment 4 and the implementation The working surface of the substrate of Example 5 or the chemical mechanical polishing conditioner is a non-planar outer shape.

如圖7所示,該化學機械研磨修整器包括一基板70、一結合層71及複數個研磨顆粒72,其中,該些研磨顆粒72係藉由該結合層71以固定於該基板70上,且該基板70及該些研磨顆粒72之尖端(即,工作面)為一凸曲面外型,使在該基板70之中心處比在該基板70之外圍區域具有較高之高度,或在中心處之該些研磨顆粒72比在外圍區域之該些研磨顆粒72具有較高之高度。 As shown in FIG. 7 , the CMP device includes a substrate 70 , a bonding layer 71 , and a plurality of abrasive particles 72 . The polishing particles 72 are fixed on the substrate 70 by the bonding layer 71 . And the tip end of the substrate 70 and the abrasive particles 72 (ie, the working surface) is a convex curved shape, so that the center of the substrate 70 has a higher height at the center of the substrate 70 than the peripheral region of the substrate 70, or is at the center. The abrasive particles 72 have a higher height than the abrasive particles 72 in the peripheral region.

另外,如圖8所示,該化學機械研磨修整器包括一基板80、一結合層81及複數個研磨顆粒82,其中,該些研磨顆粒82係藉由該結合層81以固定於該基板80上,且該基板80及該些研磨顆粒82之尖端(即,工作面)為一凹曲面外型,使在該基板80之中心處比在該基板80之外圍區域具有較低之高度,或在中心處之該些研磨顆粒82比在外圍區域之該些研磨顆粒82具有較低之高度。 In addition, as shown in FIG. 8 , the chemical mechanical polishing dresser includes a substrate 80 , a bonding layer 81 and a plurality of abrasive particles 82 , wherein the polishing particles 82 are fixed to the substrate 80 by the bonding layer 81 . And the tip end (ie, the working surface) of the substrate 80 and the abrasive particles 82 is a concave curved shape, so that the center of the substrate 80 has a lower height than the peripheral region of the substrate 80, or The abrasive particles 82 at the center have a lower height than the abrasive particles 82 in the peripheral region.

上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。 The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

41‧‧‧編織預形體 41‧‧‧woven preforms

411‧‧‧第一方向編織基材 411‧‧‧First direction braided substrate

412‧‧‧第二方向編織基材 412‧‧‧Second direction braided substrate

42‧‧‧研磨顆粒 42‧‧‧Abrasive particles

Claims (20)

一種利用編織預形體製作之化學機械研磨修整器,包括:一基板;一結合層,該結合層係設置於該基板上;以及複數個研磨顆粒,該些研磨顆粒係埋設於該結合層,且該些研磨顆粒藉由該結合層以固定於該基板上;其中,該結合層係使一編織預形體藉由一加熱硬化而形成,且該些研磨顆粒係預先固定於該編織預形體。 A chemical mechanical polishing dresser made by using a woven preform, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the bonding layer, and The abrasive particles are fixed to the substrate by the bonding layer; wherein the bonding layer is formed by a heat curing of the woven preform, and the abrasive particles are previously fixed to the woven preform. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該編織預形體之熔點係低於該加熱硬化之溫度。 The chemical mechanical polishing conditioner according to claim 1, wherein the woven preform has a melting point lower than a temperature at which the heat is hardened. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該編織預形體係含有一第一方向編織基材及一第二方向編織基材。 The CMP polishing dresser of claim 1, wherein the woven preform system comprises a first direction woven substrate and a second directional woven substrate. 如申請專利範圍第3項所述之化學機械研磨修整器,其中,相鄰的該第一方向編織基材及該第二方向編織基材間係形成一編織孔洞。 The chemical mechanical polishing conditioner according to claim 3, wherein a woven hole is formed between the adjacent first direction woven base material and the second direction woven base material. 如申請專利範圍第1或4項所述之化學機械研磨修整器,其中,該編織孔洞之最大直徑係為該些研磨顆粒之直徑的0.1至5倍。 The chemical mechanical polishing conditioner according to claim 1 or 4, wherein the maximum diameter of the woven hole is 0.1 to 5 times the diameter of the abrasive particles. 如申請專利範圍第1或4項所述之化學機械研磨修整器,其中,該編織孔洞內係含有1至5個該些研磨顆粒。 The chemical mechanical polishing conditioner according to claim 1 or 4, wherein the woven hole contains 1 to 5 of the abrasive particles. 如申請專利範圍第1或4項所述之化學機械研磨修整器,其中,該些研磨顆粒係位於該編織預形體之表面上,或該些研磨顆粒係位於該編織預形體之該編織孔洞內。 The chemical mechanical polishing conditioner according to claim 1 or 4, wherein the abrasive particles are located on a surface of the woven preform, or the abrasive particles are located in the woven hole of the woven preform . 如申請專利範圍第7項所述之化學機械研磨修整器,其中,該些研磨顆粒係具有一圖案化排列或一不規則排列。 The chemical mechanical polishing conditioner of claim 7, wherein the abrasive particles have a patterned arrangement or an irregular arrangement. 如申請專利範圍第3項所述之化學機械研磨修整器,其中,該第一方向編織基材及該第二方向編織基材間之夾角為10至90度。 The chemical mechanical polishing conditioner according to claim 3, wherein an angle between the first direction woven substrate and the second direction woven substrate is 10 to 90 degrees. 如申請專利範圍第9項所述之化學機械研磨修整器,其中,該第一方向編織基材及該第二方向編織基材間之夾角為90度。 The chemical mechanical polishing conditioner according to claim 9, wherein an angle between the first direction woven substrate and the second directional substrate is 90 degrees. 如申請專利範圍第3項所述之化學機械研磨修整器,其中,該編織預形體更包括一第三方向編織基材或一第四方向編織基材。 The chemical mechanical polishing conditioner of claim 3, wherein the woven preform further comprises a third direction woven substrate or a fourth direction woven substrate. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該編織預形體係為一單層編織結構或一多層編織結構。 The CMP polishing dresser of claim 1, wherein the woven preform system is a single layer woven structure or a multilayer woven structure. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該些研磨顆粒係為人造鑽石、天然鑽石、多晶鑽石、或立方氮化硼。 The chemical mechanical polishing conditioner according to claim 1, wherein the abrasive particles are synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該些研磨顆粒之粒徑係為30微米至600微米。 The CMP polishing dresser of claim 1, wherein the abrasive particles have a particle size of from 30 micrometers to 600 micrometers. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該結合層或該編織預形體之組成係為陶瓷材料、硬焊材料、電鍍材料、金屬材料、或高分子材料。 The chemical mechanical polishing conditioner according to claim 1, wherein the bonding layer or the composition of the woven preform is a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. 如申請專利範圍第15項所述之化學機械研磨修整器,其中,該陶瓷材料係為玻璃纖維、碳纖維。 The chemical mechanical polishing conditioner according to claim 15, wherein the ceramic material is glass fiber or carbon fiber. 如申請專利範圍第15項所述之化學機械研磨修整器,其中,該硬焊材料係至少一選自由鐵、鈷、鎳、鉻、錳、矽、鋁、及其組合所組成之群組。 The chemical mechanical polishing conditioner of claim 15, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. 如申請專利範圍第15項所述之化學機械研磨修整器,其中,該高分子材料係為環氧樹脂、聚酯樹脂、聚丙烯酸樹脂、酚醛樹脂。 The chemical mechanical polishing conditioner according to claim 15, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該基板係為不鏽鋼基板。 The chemical mechanical polishing conditioner according to claim 1, wherein the substrate is a stainless steel substrate. 如申請專利範圍第1項所述之化學機械研磨修整器,其中,該基板表面係為一平面、一凸曲面、或一凹曲面。 The chemical mechanical polishing conditioner according to claim 1, wherein the substrate surface is a plane, a convex curved surface, or a concave curved surface.
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