TW201506177A - Evaporation source device - Google Patents

Evaporation source device Download PDF

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Publication number
TW201506177A
TW201506177A TW103108654A TW103108654A TW201506177A TW 201506177 A TW201506177 A TW 201506177A TW 103108654 A TW103108654 A TW 103108654A TW 103108654 A TW103108654 A TW 103108654A TW 201506177 A TW201506177 A TW 201506177A
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Taiwan
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crucible
opening
heating
temperature
vapor deposition
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TW103108654A
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Chinese (zh)
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TWI617683B (en
Inventor
Keita Misawa
Shuji Maki
Yoshimasa Kobayashi
Yoshinari Kondo
Naoto Yamada
Kazuhiro Watanabe
Masahiro Yamazaki
Eiichi Matsumoto
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Canon Tokki Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Provided is an evaporation source device that is capable of exhibiting an excellent energy conservation effect when used, for example, with a crucible for large-substrate vapor deposition. An evaporation source device according to the present invention is equipped with: a main body heating unit (4) that heats a crucible main body (2) in which is housed a vapor deposition material (1) and in which a crucible opening part (3) is formed so as to protrude; and an opening part heating unit (5) that heats the crucible opening part (3). The evaporation source device is further provided with a heating control unit that controls the opening part heating unit (5) such that the heating start time of the crucible opening part (3) is delayed from the heating start time of the crucible main body (2), and such that the heating of the crucible opening part (3) is started before the temperature of the crucible main body (2) reaches the melting temperature or the sublimation temperature of the vapor deposition material (1). The evaporation source device is structured such that when the temperature of the crucible main body (2) reaches the melting temperature or the sublimation temperature of the vapor deposition material (1), the temperature of the crucible opening part (3) is at the melting temperature or the sublimation temperature of the vapor deposition material (1).

Description

蒸發源裝置 Evaporation source device

本發明係關於蒸發源裝置。 The present invention relates to an evaporation source device.

例如具有下述蒸發源裝置,亦即如圖1所示,在收容有蒸鍍材料31之坩堝本體32,突設形成有用來噴出被收容於此坩堝本體32且被加熱的前述蒸鍍材料31之噴嘴狀坩堝開口部33,並且分別設有用來加熱前述坩堝本體32的本體加熱部34和用來加熱前述坩堝開口部33的開口部加熱部35。 For example, as shown in FIG. 1, the vapor deposition material 31 is formed on the crucible body 32 in which the vapor deposition material 31 is housed, and the vapor deposition material 31 that is heated and accommodated in the crucible body 32 is formed. The nozzle-like opening portion 33 is provided with a body heating portion 34 for heating the first body 32 and an opening heating portion 35 for heating the opening portion 33.

在這種的蒸發源裝置,為了防止在坩堝本體32因蒸發或昇華之蒸鍍材料31附著於坩堝開口部33所引起的堵塞產生,在將此坩堝開口部33的溫度作成為坩堝本體32的溫度以上之狀態下進行蒸鍍。 In such an evaporation source device, in order to prevent clogging due to adhesion of the vapor deposition material 31 due to evaporation or sublimation of the crucible body 32 to the crucible opening portion 33, the temperature of the crucible opening portion 33 is made the crucible body 32. The vapor deposition was performed at a temperature higher than the temperature.

具體而言,在以往的蒸發源裝置,例如專利文獻1所揭示,藉由控制成使利用開口部加熱部35之加熱較利用本體加熱部34之加熱先開始進行,或如圖2所示,控制成本體加熱部34與開口部加熱部35同時地開始進行加熱,在將坩堝開口部33的溫度確實地作成為蒸鍍材料31 的熔融溫度或昇華溫度以上的狀態下進行蒸鍍。圖2中,曲線a1係顯示坩堝本體32的溫度對時間之變化,曲線a2係顯示對本體加熱部34的加熱輸出對時間之變化、曲線b1係顯示坩堝開口部33的溫度對時間之變化,而曲線b2係顯示開口部加熱部35的加熱輸出對時間之變化。 Specifically, in the conventional evaporation source device, for example, as disclosed in Patent Document 1, the heating by the opening heating unit 35 is controlled to be started earlier than the heating by the main body heating unit 34, or as shown in FIG. 2, The control cost body heating unit 34 starts heating simultaneously with the opening portion heating unit 35, and the temperature of the crucible opening portion 33 is surely made into the vapor deposition material 31. The vapor deposition was carried out in a state where the melting temperature or the sublimation temperature was higher than the melting temperature. In Fig. 2, the curve a1 shows the change of the temperature of the crucible body 32 with respect to time, the curve a2 shows the change of the heating output of the main body heating portion 34 with respect to time, and the curve b1 shows the change of the temperature of the opening portion 33 with respect to time. Curve b2 shows the change in the heating output of the opening heating portion 35 with respect to time.

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2006-188763號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-188763

又,在如上述般,控制開口部加熱部之情況,雖可確實地將坩堝開口部的溫度作成為蒸鍍材料的蒸發溫度或昇華溫度以上的狀態下進行蒸鍍,但,由於因近年的基板尺寸的大型化使得蒸發源大型化,伴隨此大型化造成坩堝開口部數量也增加,在加熱蒸發源時的消耗能量之增加成為一大問題,故,本發明者們著眼於前述開口部加熱部之加熱控制,經過各種檢討之結果,獲得以下的解釋。 In addition, in the case where the heating portion of the opening portion is controlled as described above, the vapor deposition may be performed in a state where the temperature of the opening of the crucible is more than or equal to the evaporation temperature or the sublimation temperature of the vapor deposition material. The increase in the size of the substrate increases the size of the evaporation source, and the number of openings in the crucible increases as the size increases. The increase in the energy consumption when heating the evaporation source becomes a major problem. Therefore, the inventors focused on the heating of the opening. The heating control of the Ministry, after the results of various reviews, obtained the following explanation.

亦即,坩堝開口部一般比起坩堝本體,熱容量較小,且比起坩堝本體,加熱時間短,因此,使坩堝開口部的加熱開始時間較坩堝本體的加熱開始時間慢,或坩堝本體的溫度到達蒸鍍材料的熔融溫度或昇華溫度以前,即使縮小加熱輸出,也能在將坩堝開口部的溫度作成為較坩堝本體更高的狀態下進行蒸鍍。 That is, the opening portion of the crucible is generally smaller than the crucible body, and the heating time is shorter than that of the crucible body. Therefore, the heating start time of the crucible opening is slower than the heating start time of the crucible body, or the temperature of the crucible body. Before reaching the melting temperature or the sublimation temperature of the vapor deposition material, even if the heating output is reduced, vapor deposition can be performed in a state where the temperature of the opening of the crucible is made higher than that of the crucible body.

本發明係依據發明者們的前述解釋而開發完成之發明,其目的係在於提供可抑制用來進行坩堝開口部的加熱之消耗能量,可發揮例如在大型基板蒸鍍用的坩堝具有優良的節能效果之蒸發源裝置。 The present invention has been developed in accordance with the above-described explanations of the inventors of the present invention, and an object of the invention is to provide energy consumption for suppressing heating of a crucible opening, and to provide excellent energy saving for, for example, vapor deposition on a large substrate. The evaporation source device of the effect.

參照圖面詳細地說明本發明的要旨。 The gist of the present invention will be described in detail with reference to the drawings.

本發明之蒸發源裝置係在收容有蒸鍍材料1之坩堝本體2突設形成有用來噴出被收容於該坩堝本體2且被加熱的前述蒸鍍材料1之坩堝開口部3,且具備有加熱前述坩堝本體2的本體加熱部4和加熱前述坩堝開口部3的開口部加熱部5,其特徵為設置加熱控制部,該加熱控制部控制前述開口部加熱部5,使前述坩堝開口部3的加熱開始時間較前述坩堝本體2的加熱開始時間慢,且在前述坩堝本體2的溫度到達蒸鍍材料1的熔融溫度或昇華溫度之前開始進行前述坩堝開口部3的加熱,當前述坩堝本體2的溫度到達了蒸鍍材料1的熔融溫度或昇華溫度時,前述坩堝開口部3的溫度到達蒸鍍材料1的熔融溫度或昇華溫度。 In the evaporation source device of the present invention, the crucible body 2 in which the vapor deposition material 1 is housed is formed with an opening portion 3 for ejecting the vapor deposition material 1 accommodated in the crucible body 2 and heated, and is provided with heating. The main body heating unit 4 of the crucible body 2 and the opening heating unit 5 that heats the crucible opening 3 are characterized in that a heating control unit is provided, and the heating control unit controls the opening heating unit 5 to open the opening portion 3 of the crucible The heating start time is slower than the heating start time of the crucible body 2, and the heating of the crucible opening portion 3 is started before the temperature of the crucible body 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, when the crucible body 2 is When the temperature reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, the temperature of the crucible opening 3 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1.

又,一種蒸發源裝置係在收容有蒸鍍材料1之坩堝本體2突設形成有用來噴出被收容於該坩堝本體2且被加熱的前述蒸鍍材料1之坩堝開口部3,且具備有加熱前述坩堝本體2的本體加熱部4和加熱前述坩堝開口部3的開口部加熱部5,其特徵為設置加熱控制部,該加熱控制部控 制前述開口部加熱部5,使得在前述坩堝本體2的溫度到達蒸鍍材料1之熔融溫度或昇華溫度之前,開始進行前述坩堝開口部3的加熱,此加熱控制部構成為隨著前述坩堝本體2的溫度接近蒸鍍材料1的熔融溫度或昇華溫度,一邊逐漸地增大前述開口部加熱部5的加熱輸出一邊加熱前述坩堝開口部3,當前述坩堝本體2的溫度到達了蒸鍍材料1的熔融溫度或昇華溫度時,前述坩堝開口部3的溫度到達蒸鍍材料1的熔融溫度或昇華溫度。 Further, in the evaporation source device, the crucible body 2 in which the vapor deposition material 1 is housed is formed with an opening portion 3 for ejecting the vapor deposition material 1 accommodated in the crucible body 2 and heated, and is provided with heating. The main body heating unit 4 of the crucible body 2 and the opening heating unit 5 that heats the crucible opening 3 are characterized in that a heating control unit is provided, and the heating control unit controls The opening heating unit 5 is configured to start heating the crucible opening 3 before the temperature of the crucible body 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1. The heating control unit is configured to follow the crucible body When the temperature of 2 approaches the melting temperature or the sublimation temperature of the vapor deposition material 1, the crucible opening 3 is heated while gradually increasing the heating output of the opening heating unit 5, and the temperature of the crucible body 2 reaches the vapor deposition material 1 At the melting temperature or the sublimation temperature, the temperature of the crucible opening portion 3 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1.

又,如申請專利範圍第1項之蒸發源裝置,其中,設定前述坩堝開口部3的形狀,使前述坩堝開口部3的熱容量較前述坩堝本體2的熱容量小,又構成為比起前述本體加熱部4的消耗能量,前述開口部加熱部5的消耗能量變得較少。 Further, in the evaporation source device according to the first aspect of the invention, the shape of the opening portion 3 is set such that the heat capacity of the opening portion 3 is smaller than the heat capacity of the crucible body 2, and is configured to be heated compared to the body. The energy consumed by the portion 4 is less than the energy consumption of the opening heating portion 5.

又,如申請專利範圍第2項之蒸發源裝置,其中,設定前述坩堝開口部3的形狀,使前述坩堝開口部3的熱容量較前述坩堝本體2的熱容量小,又構成為比起前述本體加熱部4的消耗能量,前述開口部加熱部5的消耗能量變得較少。 Further, in the evaporation source device of the second aspect of the invention, the shape of the opening portion 3 is set such that the heat capacity of the opening portion 3 is smaller than the heat capacity of the body 2, and is configured to be heated compared to the body. The energy consumed by the portion 4 is less than the energy consumption of the opening heating portion 5.

又,如申請專利範圍第3項之蒸發源裝置,其中,設定前述坩堝開口部3的形狀,使越靠前述坩堝開口部3的突出前端側,熱容量變得越小。 In the evaporation source device of the third aspect of the invention, the shape of the opening of the crucible opening 3 is set such that the heat capacity becomes smaller as the protruding front end side of the crucible opening 3 is formed.

又,如申請專利範圍第4項之蒸發源裝置,其中,設定前述坩堝開口部3的形狀,使越靠前述坩堝開口部3的突出前端側,熱容量變得越小。 In the evaporation source device of the fourth aspect of the invention, the shape of the opening of the crucible opening 3 is set such that the heat capacity becomes smaller as the protruding front end side of the opening portion 3 is formed.

又,如申請專利範圍第1至6項中任一項之蒸發源裝置,其中,前述坩堝開口部3係由熱傳導率較前述坩堝本體2大的材質所構成。 The evaporation source device according to any one of claims 1 to 6, wherein the opening portion 3 is made of a material having a thermal conductivity higher than that of the crucible body 2.

又,如申請專利範圍第1至6項中任一項之蒸發源裝置,其中,前述開口部加熱部5具備有:設在前述坩堝開口部3的周圍之網眼狀圓筒構件7;設在此圓筒構件7的周圍之加熱器;及設在此加熱器的周圍之熱反射構件9。 The evaporation source device according to any one of claims 1 to 6, wherein the opening heating unit 5 includes a mesh-shaped cylindrical member 7 provided around the opening 3 of the crucible; a heater around the cylindrical member 7; and a heat reflecting member 9 provided around the heater.

又,如申請專利範圍第7項之蒸發源裝置,其中,前述開口部加熱部5具備有:設在前述坩堝開口部3的周圍之網眼狀圓筒構件7;設在此圓筒構件7的周圍之加熱器;及設在此加熱器的周圍之熱反射構件9。 The evaporation source device according to the seventh aspect of the invention, wherein the opening heating unit 5 includes a mesh-shaped cylindrical member 7 provided around the opening 3 of the crucible; the cylindrical member 7 is provided a surrounding heater; and a heat reflecting member 9 disposed around the heater.

由於本發明具有前述結構,故,能夠成為可抑制用來進行坩堝開口部的加熱之消耗能量,可發揮例如在大型基板蒸鍍用的坩堝具有優良的節能效果之蒸發源裝置。 According to the present invention, it is possible to reduce the energy consumption for heating the opening of the crucible, and to exhibit an excellent energy saving effect, for example, in the vapor deposition of a large substrate.

1‧‧‧蒸鍍材料 1‧‧‧ evaporation materials

2‧‧‧坩鍋本體 2‧‧‧坩锅体

3‧‧‧坩鍋開口部 3‧‧‧ Shabu-shabu opening

4‧‧‧本體加熱部 4‧‧‧ Body heating

5‧‧‧開口部加熱部 5‧‧‧ Opening heating section

6‧‧‧凸緣部 6‧‧‧Flange

7‧‧‧圓筒構件 7‧‧‧Cylinder components

8‧‧‧夾套加熱器 8‧‧‧ Jacket heater

9‧‧‧熱反射構件 9‧‧‧ Heat reflecting member

10‧‧‧圓形窗 10‧‧‧round window

11‧‧‧方形窗 11‧‧‧ square window

圖1係蒸發源裝置的概略說明斷面圖。 Fig. 1 is a schematic cross-sectional view showing an evaporation source device.

圖2係顯示以往的溫度控制模式之概略說明圖。 Fig. 2 is a schematic explanatory view showing a conventional temperature control mode.

圖3係顯示本實施例的溫度控制模式之概略說明圖。 Fig. 3 is a schematic explanatory view showing a temperature control mode of the embodiment.

圖4係本實施例的概略說明斷面圖。 Fig. 4 is a schematic cross-sectional view showing the embodiment.

圖5係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 5 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖6係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 6 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖7係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 7 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖8係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 8 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖9係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 9 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖10係顯示蒸發源裝置的一構成例之概略說明斷面圖。 Fig. 10 is a schematic cross-sectional view showing a configuration example of an evaporation source device.

圖11係顯示溫度控制模式的一例之概略說明圖。 Fig. 11 is a schematic explanatory diagram showing an example of a temperature control mode.

圖12係顯示溫度控制模式的一例之概略說明圖。 Fig. 12 is a schematic explanatory view showing an example of a temperature control mode.

圖13係顯示溫度控制模式的一例之概略說明圖。 Fig. 13 is a schematic explanatory diagram showing an example of a temperature control mode.

圖14係顯示蒸發源裝置的一構成例之局部的放大概略說明斷面圖。 Fig. 14 is an enlarged schematic cross-sectional view showing a part of a configuration example of an evaporation source device.

圖15係顯示蒸發源裝置的一構成例之分解說明斜視圖。 Fig. 15 is an exploded perspective view showing a configuration example of the evaporation source device.

圖16係顯示蒸發源裝置的一構成例之分解說明斜視圖。 Fig. 16 is an exploded perspective view showing a configuration example of the evaporation source unit.

依據圖面,顯示本發明的作用而簡單地說明本發明的理想實施形態。 The preferred embodiment of the present invention will be briefly described on the basis of the drawings showing the effects of the present invention.

當藉由配置在真空槽內的坩堝,對基板進行蒸鍍時, 控制開口部加熱部5,使坩堝開口部3的加熱開始時間較坩堝本體2的加熱開始時間慢,且在坩堝本體2的溫度到達蒸鍍材料1的熔融溫度或昇華溫度之前開始進行坩堝開口部3的加熱。 When the substrate is vapor-deposited by the crucible disposed in the vacuum chamber, The opening heating unit 5 is controlled such that the heating start time of the crucible opening 3 is slower than the heating start time of the crucible body 2, and the opening of the crucible is started before the temperature of the crucible body 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1. 3 heating.

亦即,並非控制成使利用開口部加熱部5之加熱較利用本體加熱部4之加熱先開始進行,或本體加熱部4與開口部加熱部5同時地開始進行加熱,而是藉由使利用開口部加熱部5之加熱較慢進行,利用之後的加熱,該部分可抑制開口部加熱部5之消耗能量。特別是在大型基板蒸鍍用坩堝之情況,增加坩堝開口部數量,節能效果變大。 In other words, it is not controlled so that the heating by the opening heating unit 5 is started earlier than the heating by the main body heating unit 4, or the main body heating unit 4 starts heating simultaneously with the opening heating unit 5, but by utilizing The heating of the opening heating portion 5 is performed slowly, and this portion can suppress the energy consumption of the opening heating portion 5 by the subsequent heating. In particular, in the case of a large-sized substrate vapor deposition crucible, the number of openings in the crucible is increased, and the energy saving effect is increased.

具體而言,如顯示圖3所示的坩堝開口部3之溫度及開口部加熱部5的加熱輸出的變化之曲線B1及B2所示,進行開口部加熱部5的加熱輸出控制,使得從顯示坩堝本體2的溫度變化之曲線A1到達蒸鍍材料1的昇華溫度之稍前開始進行加熱,在曲線A1到達了蒸鍍材料1的昇華溫度之時間點,坩堝開口部3的溫度成為該昇華溫度以上。曲線b1及曲線b2係顯示從圖2投影之以往的蒸發源裝置的坩堝開口部33之溫度及開口部加熱部35的加熱輸出之變化。又,曲線A2係顯示本體加熱部4的加熱輸出之變化。 Specifically, as shown by curves B1 and B2 showing changes in the temperature of the 坩埚 opening 3 and the change in the heating output of the opening heating unit 5 shown in FIG. 3, the heating output control of the opening heating unit 5 is performed so that the display is performed. The curve A1 of the temperature change of the crucible body 2 is heated before reaching the sublimation temperature of the vapor deposition material 1. When the curve A1 reaches the sublimation temperature of the vapor deposition material 1, the temperature of the opening portion 3 becomes the sublimation temperature. the above. The curve b1 and the curve b2 show changes in the temperature of the opening portion 33 of the conventional evaporation source device projected from FIG. 2 and the heating output of the opening heating portion 35. Further, the curve A2 shows a change in the heating output of the main body heating unit 4.

因此,在圖3中,在相當於被顯示以往的蒸發源裝置的開口部加熱部35之加熱輸出的曲線b2與顯示本發明的開口部加熱部5的加熱輸出之曲線B2所包圍的區域X的範圍,能夠抑制開口部加熱部5的消耗能量。 Therefore, in FIG. 3, the curve b2 corresponding to the heating output of the opening heating portion 35 of the conventional evaporation source device and the region X surrounded by the curve B2 indicating the heating output of the opening heating portion 5 of the present invention are shown. In the range, the energy consumption of the opening heating unit 5 can be suppressed.

在此,即使將利用開口部加熱部5之加熱較慢,一般坩堝開口部3的熱容量較坩堝本體2小,該部分使得加熱時間較短即可達成,因此,能夠容易達成:在坩堝本體2的溫度到達了蒸鍍材料1的熔融溫度或昇華溫度之際,使坩堝開口部3的溫度到達蒸鍍材料1的熔融溫度或昇華溫度。 Here, even if the heating by the opening heating unit 5 is slow, the heat capacity of the opening portion 3 is generally smaller than that of the body 2, and this portion can be achieved by shortening the heating time. Therefore, it can be easily achieved: in the body 2 When the temperature reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, the temperature of the crucible opening portion 3 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1.

又,並非使利用開口部加熱部5之加熱較慢進行,而是例如藉由控制成將利用開口部加熱部5之加熱輸出在開始加熱時設定成較小,隨著坩堝本體2的溫度接近蒸鍍材料1的熔融溫度或昇華溫度而逐漸地變大,透過最初的加熱輸出設定成較小的部分,能夠抑制開口部加熱部5之消耗能量。又,在此情況,能夠逐漸地加熱坩堝開口部3,可抑制坩堝全體的溫度分佈。 Further, the heating by the opening heating unit 5 is not performed slowly, but the heating output by the opening heating unit 5 is set to be small at the start of heating, for example, as the temperature of the crucible body 2 approaches. The melting temperature or the sublimation temperature of the vapor deposition material 1 gradually increases, and the first heating output is set to a small portion, and the energy consumption of the opening heating portion 5 can be suppressed. Moreover, in this case, the opening portion 3 can be gradually heated, and the temperature distribution of the entire crucible can be suppressed.

又,例如特別是藉由設定坩堝開口部3的形狀,使坩堝開口部3的熱容量變小,或設定坩堝開口部3的形狀,使越接近坩堝開口部3的突出前端側熱容量變得越小,或以熱傳導率較坩堝本體2更大的材質構成坩堝開口部3,能夠進一步縮短坩堝開口部3的加熱時間,該部分,能夠使坩堝開口部3的加熱開始時間較坩堝本體2的加熱開始時間慢,可進一步抑制消耗能量。 Further, for example, by setting the shape of the opening portion 3, the heat capacity of the opening portion 3 is reduced, or the shape of the opening portion 3 is set, and the heat capacity of the protruding front end side closer to the opening portion 3 is made smaller. Or the opening portion 3 is made of a material having a thermal conductivity higher than that of the body 2, and the heating time of the opening portion 3 can be further shortened. This portion allows the heating start time of the opening portion 3 to be higher than the heating of the body 2 Slow time can further suppress energy consumption.

又,在將前述開口部加熱部5作成為具備有:設在坩堝開口部3的周圍之網眼狀圓筒構件7;設在此圓筒構件7的周圍之加熱器;及設在此加熱器的周圍之熱反射構件9的結構之情況,可容易製造而成為能夠更有效率地加熱 坩堝開口部3之開口部加熱部5。 Further, the opening heating portion 5 is provided with a mesh-shaped cylindrical member 7 provided around the opening portion 3; a heater provided around the cylindrical member 7; and heating there In the case of the structure of the heat reflecting member 9 around the device, it can be easily manufactured and can be heated more efficiently. The opening portion heating portion 5 of the opening portion 3 is formed.

[實施例] [Examples]

依據圖面說明關於本發明的具體實施例。 Specific embodiments of the invention are described in terms of the drawings.

本實施例係為在蒸鍍裝置之真空槽,用於為了例如將有機材料蒸鍍於基板之蒸發源裝置。 This embodiment is a vacuum tank in a vapor deposition apparatus for evaporating source means for evaporating an organic material on a substrate, for example.

具體而言,本實施例之蒸發源裝置係在收容有蒸鍍材料1之坩堝本體2突設形成有用來噴出被收容於該坩堝本體2且被加熱的前述蒸鍍材料1之坩堝開口部3,且具備有加熱前述坩堝本體2的本體加熱部4和加熱前述坩堝開口部3的開口部加熱部5,設置加熱控制部,該加熱控制部控制前述開口部加熱部5,使前述坩堝開口部3的加熱開始時間較前述坩堝本體2的加熱開始時間慢,且在前述坩堝本體2的溫度到達蒸鍍材料1的熔融溫度或昇華溫度之前開始進行前述坩堝開口部3的加熱,當前述坩堝本體2的溫度到達了蒸鍍材料1的熔融溫度或昇華溫度時,前述坩堝開口部3的溫度到達蒸鍍材料1的熔融溫度或昇華溫度。 Specifically, in the evaporation source device of the present embodiment, the crucible opening portion 3 for ejecting the vapor-deposited material 1 accommodated in the crucible body 2 and heated is protruded from the crucible body 2 in which the vapor deposition material 1 is housed. Further, the main body heating unit 4 that heats the crucible body 2 and the opening heating unit 5 that heats the crucible opening 3 are provided, and a heating control unit that controls the opening heating unit 5 to open the opening portion The heating start time of 3 is slower than the heating start time of the crucible body 2, and the heating of the crucible opening portion 3 is started before the temperature of the crucible body 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, when the crucible body is When the temperature of 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, the temperature of the crucible opening 3 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1.

在坩堝本體2收容有蒸鍍材料1,於坩堝本體2的頂面、側面及底面,分別沿著坩堝本體2的長度方向設置作為本體加熱部4之夾套加熱器。 The vapor deposition material 1 is accommodated in the crucible body 2, and a jacket heater as the main body heating portion 4 is provided along the longitudinal direction of the crucible body 2 on the top surface, the side surface, and the bottom surface of the crucible body 2, respectively.

坩堝開口部3係為突出設置於坩堝本體2的頂面之圓筒噴嘴狀,沿著坩堝本體2的長度方向,以複數個的方式呈線狀並列設置。在此坩堝開口部3的周面,以捲繞狀態 設置作為開口部加熱部5的夾套加熱器。再者,基板的被成膜面以與坩堝本體2的頂面之坩堝開口部3相對向的方式分別配置在真空槽內。 The opening portion 3 is formed in a cylindrical nozzle shape projecting from the top surface of the crucible body 2, and is arranged in a line shape in a plurality of ways along the longitudinal direction of the crucible body 2. Here, the circumferential surface of the opening portion 3 is wound A jacket heater as the opening heating portion 5 is provided. Further, the film formation surface of the substrate is placed in the vacuum chamber so as to face the opening portion 3 of the top surface of the crucible body 2, respectively.

在本實施例,坩堝開口部3係為了進一步縮小其熱容量,而如圖4所示,形成為比起坩堝本體2,厚度充分薄之形狀。具體而言,設定為成為坩堝本體2的其中任一個壁面的厚度之1/4(在本實施例約為1/5)以下的厚度。再者,亦可例如圖5所示,構成為不將坩堝開口部3作成為厚度薄形狀,而藉由縮短突出長度來縮小熱容量。 In the present embodiment, the crucible opening portion 3 is formed to have a sufficiently thinner thickness than the crucible body 2 in order to further reduce the heat capacity thereof as shown in FIG. Specifically, it is set to have a thickness equal to or less than 1/4 of the thickness of one of the wall surfaces of the crucible body 2 (about 1/5 in the present embodiment). Further, as shown in FIG. 5, for example, the crucible opening portion 3 may be formed to have a thin thickness, and the heat capacity may be reduced by shortening the protruding length.

又,在構成為越接近坩堝開口部3的突出前端側熱容量變得越小之情況,可進一步縮短加熱時間。例如可採用作成為如圖6所示,使坩堝開口部3的內徑越朝突出前端側越擴大直徑之形狀,或如圖7所示,使坩堝開口部3的外徑越朝突出前端側越縮小直徑之形狀,或如圖8所示,使坩堝開口部的內徑及外徑越朝突出前端側越縮小直徑且將厚度作成為一定之形狀,或如圖9所示,使坩堝開口部的內徑及外徑越朝突出前端側越縮小直徑且越靠近突出前端側厚度變得越薄之形狀。 Moreover, in the case where the heat capacity becomes smaller toward the protruding distal end side of the opening portion 3, the heating time can be further shortened. For example, as shown in FIG. 6, the inner diameter of the crotch opening 3 may be increased in diameter toward the protruding distal end side, or as shown in FIG. 7, the outer diameter of the crotch opening 3 may be toward the protruding distal end side. The shape of the diameter is reduced, or as shown in FIG. 8, the inner diameter and the outer diameter of the opening portion of the crucible are made smaller toward the front end side and the thickness is made constant, or as shown in FIG. The inner diameter and the outer diameter of the portion are reduced in diameter toward the front end side, and the thickness becomes thinner toward the front end side.

又,坩堝開口部3亦可為與坩堝本體2不同體,且由以熱傳導率較坩堝本體2大的材質所構成。例如,以鉭構成坩堝本體2,以例如鋁合金構成坩堝開口部3。具體而言,亦可如圖10所示,作成為在坩堝本體2的頂面,安裝由高熱傳導率材料所構成的坩堝開口部3之結構。在此情況,構成為在坩堝開口部3的基端部設置凸緣部6,以 螺栓等將凸緣部6安裝於坩堝本體2。 Further, the opening portion 3 of the crucible may be different from the crucible body 2, and may be made of a material having a thermal conductivity higher than that of the main body 2. For example, the crucible body 2 is made of tantalum, and the crucible opening portion 3 is made of, for example, an aluminum alloy. Specifically, as shown in FIG. 10, a structure in which the opening portion 3 made of a high thermal conductivity material is attached to the top surface of the crucible body 2 may be employed. In this case, the flange portion 6 is provided at the base end portion of the opening portion 3 to A flange portion 6 is attached to the crucible body 2 by a bolt or the like.

又,本體加熱部4及開口部加熱部5分別藉由加熱控制部(未圖示)控制加熱輸出(電力),進行坩堝本體2及坩堝開口部3的溫度控制。例如,在各加熱部分別設置一般的PID溫度控制裝置等,藉由這些裝置以預先設定的預定模式分別控制各加熱部的加熱輸出。 Further, the main body heating unit 4 and the opening heating unit 5 control the heating output (electric power) by a heating control unit (not shown) to control the temperature of the crucible body 2 and the crucible opening 3. For example, a general PID temperature control device or the like is provided in each heating unit, and the heating output of each heating unit is controlled by these devices in a predetermined predetermined pattern.

在本實施例,如上述般,以如圖3所示的模式,進行本體加熱部4及開口部加熱部5之加熱輸出。亦即,坩堝開口部3之溫度及開口部加熱部5的加熱輸出的變化之曲線B1及B2所示,進行開口部加熱部5的加熱輸出控制,使得從顯示坩堝本體2的溫度變化之曲線A1到達蒸鍍材料1的昇華溫度之稍前開始進行加熱,在曲線A1到達了蒸鍍材料1的昇華溫度之時間點,坩堝開口部3的溫度成為該昇華溫度以上。 In the present embodiment, as described above, the heating output of the main body heating unit 4 and the opening heating unit 5 is performed in the mode shown in FIG. In other words, as shown by the curves B1 and B2 of the temperature of the opening portion 3 and the change in the heating output of the opening portion heating portion 5, the heating output control of the opening portion heating portion 5 is performed so as to change the temperature from the display body 2. When A1 reaches the sublimation temperature of the vapor deposition material 1, heating is started, and when the curve A1 reaches the sublimation temperature of the vapor deposition material 1, the temperature of the opening portion 3 becomes equal to or higher than the sublimation temperature.

在進行蒸鍍之際,開口部加熱部5的加熱開始時間,若較利用本體加熱部4之加熱開始時間慢,則無論何時均可,但,為了獲得最大限度之消耗能量抑制效果,盡可能慢為佳。這是因為例如圖11所示,在藉由使加熱開始時間變慢而需要急速加熱且需要暫時地增大加熱輸出之情況,在被曲線B2及b2所包圍的區域Y,消耗能量增加,但區域Y比起因使加熱開始時間變慢而變廣之區域X極小,容易相消。 When the vapor deposition is performed, the heating start time of the opening heating unit 5 is slower than the heating start time of the main body heating unit 4, but it is possible to obtain the maximum energy consumption suppression effect as much as possible. Slow is better. This is because, for example, as shown in FIG. 11, in the case where the heating start time is slowed and the heating is required to be rapidly heated and the heating output needs to be temporarily increased, the energy consumption increases in the region Y surrounded by the curves B2 and b2, but The region Y is extremely small in comparison with the region X which is widened by slowing the heating start time, and is easily eliminated.

再者,亦可如圖12及圖13所示,構成加熱控制部,一邊使開口部加熱部5的加熱輸出逐漸增大,一邊加熱坩 堝開口部3,在坩堝本體2的溫度到達了蒸鍍材料1的熔融溫度或昇華溫度時,坩堝開口部3的溫度到達蒸鍍材料1的熔融溫度或昇華溫度。在此情況,開口部加熱部5的加熱開始時間,亦可為坩堝開口部3之加熱開始時間之前。又,圖12所示的為將控制間隔設定為較大而階段性地增大加熱輸出之模式,圖13所示的為將控制間隔設定為較小而連續地增大加熱輸出之模式。由於將控制間隔設定為較小,能夠盡可能地縮小過衝,故極為理想。 Further, as shown in FIG. 12 and FIG. 13, the heating control unit may be configured to heat the heating output of the opening heating unit 5 while gradually increasing the heating output. In the opening portion 3, when the temperature of the crucible body 2 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1, the temperature of the crucible opening portion 3 reaches the melting temperature or the sublimation temperature of the vapor deposition material 1. In this case, the heating start time of the opening heating unit 5 may be before the heating start time of the opening portion 3. Further, Fig. 12 shows a mode in which the control interval is set to be large and the heating output is stepwise increased. Fig. 13 shows a mode in which the control interval is set to be small and the heating output is continuously increased. Since the control interval is set to be small, it is possible to reduce the overshoot as much as possible, which is extremely desirable.

又,亦可作成下述結構,並非在坩堝開口部3的周圍將夾套加熱器直接設成捲繞狀態,而是在坩堝開口部3的周圍設置網眼狀圓筒構件7,在此圓筒構件7的周圍將夾套加熱器8設成捲繞狀態,並在此夾套加熱器8的周圍設置圓筒狀熱反射構件9之結構。又,若網眼狀圓筒構件7,為如圖15所示併設有多數個圓形窗10之結構、如圖16所示併設有多數個方形窗11的結構等,能夠將夾套加熱器的熱良好地傳達至坩堝開口部3的結構,則能夠自由地進行設定。 Further, a configuration may be adopted in which the jacketed heater is not directly provided in the wound state around the opening portion 3, but a mesh-shaped cylindrical member 7 is provided around the opening portion 3, and the circle is provided therein. The jacket heater 8 is placed in a wound state around the tubular member 7, and a cylindrical heat reflecting member 9 is provided around the jacket heater 8. Further, if the mesh-shaped cylindrical member 7 has a structure in which a plurality of circular windows 10 are provided as shown in Fig. 15, and a plurality of square windows 11 are provided as shown in Fig. 16, a jacket heater can be provided. The heat is smoothly transmitted to the structure of the opening portion 3, and the setting can be freely performed.

在此情況,藉由設置熱反射構件9,能夠以夾套加熱器8進一步有效率地加熱坩堝開口部3。又,比起將夾套加熱器8安裝於熱反射構件9的內面之情況,較容易將夾套加熱器8嵌合於網眼狀圓筒構件7而一體化,僅此就容易進行開口部加熱部5的製造及配置。 In this case, by providing the heat reflecting member 9, the jaw opening portion 3 can be further efficiently heated by the jacket heater 8. Moreover, when the jacket heater 8 is attached to the inner surface of the heat reflecting member 9, it is easier to fit the jacket heater 8 to the mesh-shaped cylindrical member 7 and integrate it, and the opening is easy. Manufacturing and arrangement of the heating unit 5 .

再者,本發明不限於本實施例,可適宜地設計各構成要件之具體結構。 Furthermore, the present invention is not limited to the embodiment, and the specific structure of each constituent element can be appropriately designed.

1‧‧‧蒸鍍材料 1‧‧‧ evaporation materials

2‧‧‧坩鍋本體 2‧‧‧坩锅体

3‧‧‧坩鍋開口部 3‧‧‧ Shabu-shabu opening

4‧‧‧本體加熱部 4‧‧‧ Body heating

5‧‧‧開口部加熱部 5‧‧‧ Opening heating section

Claims (9)

一種蒸發源裝置,係在收容有蒸鍍材料之坩堝本體突設形成有用來噴出被收容於該坩堝本體且被加熱的前述蒸鍍材料之坩堝開口部,且具備有加熱前述坩堝本體的本體加熱部和加熱前述坩堝開口部的開口部加熱部,其特徵為:設置加熱控制部,該加熱控制部控制前述開口部加熱部,使前述坩堝開口部的加熱開始時間較前述坩堝本體的加熱開始時間慢,且在前述坩堝本體的溫度到達蒸鍍材料的熔融溫度或昇華溫度之前開始進行前述坩堝開口部的加熱,當前述坩堝本體的溫度到達了蒸鍍材料的熔融溫度或昇華溫度時,前述坩堝開口部的溫度到達蒸鍍材料的熔融溫度或昇華溫度。 An evaporation source device is provided with a crucible opening for ejecting the vapor deposition material accommodated in the crucible body and having a vapor deposition material, and is provided with a heating body for heating the crucible body And an opening heating unit that heats the opening of the crucible, wherein the heating control unit controls the opening heating unit to cause a heating start time of the crucible opening to be higher than a heating start time of the crucible body Slowly, the heating of the opening of the crucible is started before the temperature of the crucible body reaches the melting temperature or the sublimation temperature of the vapor deposition material. When the temperature of the crucible body reaches the melting temperature or the sublimation temperature of the vapor deposition material, the crucible The temperature of the opening reaches the melting temperature or sublimation temperature of the vapor deposition material. 一種蒸發源裝置,係在收容有蒸鍍材料之坩堝本體突設形成有用來噴出被收容於該坩堝本體且被加熱的前述蒸鍍材料之坩堝開口部,且具備有加熱前述坩堝本體的本體加熱部和加熱前述坩堝開口部的開口部加熱部,其特徵為:設置加熱控制部,該加熱控制部控制前述開口部加熱部,使得在前述坩堝本體的溫度到達蒸鍍材料之熔融溫度或昇華溫度之前,開始進行前述坩堝開口部的加熱,此加熱控制部構成為隨著前述坩堝本體的溫度接近蒸鍍材料的熔融溫度或昇華溫度,一邊逐漸地增大前述開口部加熱部的加熱輸出一邊加熱前述坩堝開口部,當前述坩堝本體的溫度到達了蒸鍍材料的熔融溫度或昇華溫度時,前述坩堝開口部的溫度到達蒸鍍材料的熔融溫度或昇華溫度。 An evaporation source device is provided with a crucible opening for ejecting the vapor deposition material accommodated in the crucible body and having a vapor deposition material, and is provided with a heating body for heating the crucible body And an opening heating unit that heats the opening of the crucible, wherein the heating control unit controls the opening heating unit such that the temperature of the crucible body reaches a melting temperature or a sublimation temperature of the vapor deposition material. The heating of the opening portion is started, and the heating control unit is configured to gradually increase the heating output of the heating portion of the opening as the temperature of the crucible body approaches the melting temperature or the sublimation temperature of the vapor deposition material. In the opening of the crucible, when the temperature of the crucible body reaches the melting temperature or the sublimation temperature of the vapor deposition material, the temperature of the crucible opening reaches the melting temperature or the sublimation temperature of the vapor deposition material. 如申請專利範圍第1項之蒸發源裝置,其中,設定前述坩堝開口部的形狀,使前述坩堝開口部的熱容量較前述坩堝本體的熱容量小,構成為比起前述本體加熱部的消耗能量,前述開口部加熱部的消耗能量變得較少。 The evaporation source device according to claim 1, wherein the shape of the opening of the crucible is set such that a heat capacity of the opening of the crucible is smaller than a heat capacity of the crucible body, and is configured to be larger than energy consumption of the main body heating unit. The energy consumption of the opening heating portion becomes small. 如申請專利範圍第2項之蒸發源裝置,其中,設定前述坩堝開口部的形狀,使前述坩堝開口部的熱容量較前述坩堝本體的熱容量小,構成為比起前述本體加熱部的消耗能量,前述開口部加熱部的消耗能量變得較少。 The evaporation source device according to claim 2, wherein the shape of the opening of the crucible is set such that a heat capacity of the opening of the crucible is smaller than a heat capacity of the crucible body, and is configured to be larger than energy consumption of the main body heating unit. The energy consumption of the opening heating portion becomes small. 如申請專利範圍第3項之蒸發源裝置,其中,設定前述坩堝開口部的形狀,使越靠前述坩堝開口部的突出前端側,熱容量變得越小。 In the evaporation source device of the third aspect of the invention, the shape of the opening of the crucible is set such that the heat capacity becomes smaller as the protruding front end side of the opening of the crucible is formed. 如申請專利範圍第4項之蒸發源裝置,其中,設定前述坩堝開口部的形狀,使越靠前述坩堝開口部的突出前端側,熱容量變得越小。 In the evaporation source device of the fourth aspect of the invention, the shape of the opening of the crucible is set such that the heat capacity becomes smaller as the protruding front end side of the opening of the crucible is formed. 如申請專利範圍第1至6項中任一項之蒸發源裝置,其中,前述坩堝開口部係由熱傳導率較前述坩堝本體大的材質所構成。 The evaporation source device according to any one of claims 1 to 6, wherein the opening of the crucible is made of a material having a thermal conductivity higher than that of the crucible body. 如申請專利範圍第1至6項中任一項之蒸發源裝置,其中,前述開口部加熱部具備有:設在前述坩堝開口部的周圍之網眼狀圓筒構件;設在此圓筒構件的周圍之加熱器;及設在此加熱器的周圍之熱反射構件。 The evaporation source device according to any one of claims 1 to 6, wherein the opening heating unit includes a mesh-shaped cylindrical member provided around the opening of the crucible; and the cylindrical member is provided a surrounding heater; and a heat reflecting member disposed around the heater. 如申請專利範圍第7項之蒸發源裝置,其中,前述開口部加熱部具備有:設在前述坩堝開口部的周圍之網眼狀圓筒構件;設在此圓筒構件的周圍之加熱器;及設在此 加熱器的周圍之熱反射構件。 The evaporation source device according to claim 7, wherein the opening heating portion includes a mesh-shaped cylindrical member provided around the opening of the crucible; and a heater provided around the cylindrical member; And located here A heat reflecting member around the heater.
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