TW201505227A - Organic device manufacturing method, organic device manufacturing apparatus and organic device - Google Patents

Abstract

Moisture is restrained from infiltrating into organic electro luminescence (EL) element. A method for manufacturing an organic device comprises a process of carrying a substrate where an interlayer is formed on one or more barrier ribs and a first sealing layer sealing an organic layer on both electrodes, and a process of etchbacking the interlayer formed on the substrate. The process of etchbacking features that at least a part of the first sealing layer on at least one barrier rib out of the one or more barrier ribs is processed until being exposed starting from the interlayer to the extent of being able to contact with a second sealing layer film-formed in the next process.

Description

Manufacturing method of organic component, manufacturing device of organic component, and organic component

The present invention relates to a method for producing an organic device, a device for manufacturing an organic device, and an organic device.

In recent years, organic EL elements using, for example, electroluminescence (EL: Electro Luminescence) have been developed. The organic EL element has an advantage that it consumes less power than a Brown tube or the like and is self-luminous, and is superior in viewing angle to a liquid crystal display.

On the other hand, the organic EL element is not resistant to moisture. Therefore, if moisture permeates from the defective portion of the organic EL element, the luminance of the light is lowered, or a non-light-emitting region called a dark spot is generated. Therefore, for example, a sealing layer having moisture permeability resistance may be formed on the surface of the organic EL element. In this case, it can be formed by a low temperature program which does not cause damage to the organic EL element, and an inorganic layer such as tantalum nitride is sometimes used for the sealing layer which is required to have moisture permeability resistance.

However, in the above-mentioned sealing layer, moisture permeates from the opening side surface of the electrode pad, and moisture which has penetrated causes deterioration of the organic EL element, and the life is shortened.

Therefore, it has been proposed to seal the organic EL element on the organic EL element with a plurality of sealing layers laminated with one or more layers of the intermediate layer (planarization layer) and the protective layer (for example, see Patent Document 1).

Prior technical literature

Patent Document 1 Japanese Patent Laid-Open Publication No. 2012-253036

However, in Patent Document 1, in order to form an intermediate layer, it is necessary to use a cover, and it is necessary to align the cover with the substrate, and there is a problem that the production amount is lowered and the manufacturing cost is increased.

In view of the above problems, an object of the present invention is to form an element having a sealing structure having high sealing performance without lowering the production amount at a low cost.

In order to solve the above problems, a method for manufacturing an organic device according to an aspect is provided, comprising: forming a substrate having an intermediate layer on a first sealing layer for sealing one or a plurality of partition walls and an organic layer on an anode; a process of moving in; and a process of etching back an intermediate layer formed on the substrate; the etchback process is performed to at least a portion of the first sealing layer on the at least one of the one or a plurality of partition walls from the middle The layer is exposed to such an extent that it can be in contact with the second sealing layer formed in the next process.

Further, in order to solve the above problems, an apparatus for manufacturing an organic element according to another aspect is provided, comprising: a first film forming apparatus for sealing one or a plurality of partition walls formed on a substrate and an organic layer on an anode; a first sealing layer; a second film forming apparatus that applies an intermediate layer to the first sealing layer; and an etching device that etches back the intermediate layer; the etching device etches back the intermediate layer to the one or plural At least a part of the first sealing layer on at least one of the partition walls is exposed from the intermediate layer to such an extent that it can come into contact with the second sealing layer formed in the next process.

Further, in order to solve the above problems, an organic element is provided in accordance with another aspect, and is a first sealing layer which seals one or a plurality of partition walls and an organic layer on an anode, and is at least one of the partition walls. An intermediate layer is formed in such a manner that at least a portion of the sealing layer is exposed; and the second sealing layer on the intermediate layer is formed to be in contact with the first sealing layer exposed from the intermediate layer.

According to one aspect, an element having a sealing structure having a high sealing property can be formed at a low cost without reducing the throughput.

1‧‧‧Manufacturing device for organic components

12‧‧‧cleaning device

16‧‧‧Vapor deposition unit

20‧‧‧ Film forming apparatus A

24‧‧‧ Film Forming Device B

32‧‧‧ etching device

34‧‧‧film forming device D

36‧‧‧Fitting device

38‧‧‧ etching device

50‧‧‧Organic EL components

51‧‧‧Control Department

52‧‧‧Electrical electrode pad

100‧‧‧Control Department

101‧‧‧ sealing layer

103‧‧‧Intermediate

105‧‧‧ Sealing layer

110, 120, 130, 140‧‧‧ next door

Fig. 1(a) is a schematic cross-sectional view showing an organic element according to an embodiment, and Fig. 1(b) is a schematic cross-sectional view showing an organic element for comparison.

Fig. 2 is a view showing the overall configuration of a manufacturing apparatus of an organic component according to an embodiment.

Fig. 3A is a view showing an organic EL element formed on a substrate on which a partition portion is formed in an embodiment.

Fig. 3B is a view showing an intermediate layer formed by forming a first sealing layer on a substrate on which an organic EL element is provided in an embodiment.

Fig. 3C is a view showing the formation of a second sealing layer by etching back an intermediate layer according to an embodiment.

3D is a view showing an organic EL device according to an embodiment and a periphery thereof covered with a cover sheet to etch and open the electrode pad portion.

Fig. 4 is a view showing an example of formation of a partition wall portion according to an embodiment.

Fig. 5 is a view for explaining the reflow action of an embodiment.

Fig. 6 is a view showing a second sealing layer formed by etching back an intermediate layer in a first modification of the embodiment.

Fig. 7 is a view showing a second sealing layer formed by etching back an intermediate layer in a second modification of the embodiment.

Fig. 8A is a view showing the formation of the intermediate layer and the etch back in the third modification of the embodiment.

Fig. 8B is a view showing a second sealing layer formed by repeating etch back in a third modification of the embodiment.

Fig. 8C is a view showing a modification of the third embodiment, in which the organic EL element and its periphery are covered with a cover sheet, and the electrode pad portion is etched to form an opening.

Fig. 9 is a schematic cross-sectional view showing an example of an etching processing apparatus according to an embodiment.

Fig. 10 is a schematic cross-sectional view showing an example of a film forming apparatus of an embodiment.

Fig. 11A is a view showing an example of a material gas supply structure of an embodiment.

Fig. 11B is a view showing an example of a plasma supply gas supply structure according to an embodiment.

Fig. 12 is a view for explaining an example of a laminated structure of a sealing layer according to an embodiment.

Hereinafter, the form in which the present invention is implemented will be described with reference to the drawings. In the specification and the drawings, the same reference numerals are given to the same components, and the overlapping description is omitted.

<start>

Generally, organic EL elements are not resistant to moisture. If moisture permeates from the defective portion of the organic EL element, the luminance of the light is lowered or a non-light-emitting portion region called a dark spot is generated. Therefore, a sealing layer having moisture permeability resistance is formed on the surface of the organic EL element. For example, as shown in FIG. 1(a) and FIG. 1(b), a sealing layer 101 (first sealing layer) for sealing the organic EL element 50 is formed on a glass substrate S (hereinafter simply referred to as a substrate S).

However, even if the sealing layer 101 is provided, as shown in FIG. 1(b), if moisture enters from above the electrode pad portion 52 during the manufacturing process of the element or after the penetration, the organic EL element 50 is infiltrated. The EL element 50 is deteriorated, shortening the life of the element.

In order to suppress the infiltration of water into the organic EL element 50, the organic element produced in the present embodiment is provided with a partition wall portion between the organic EL element 50 and the electrode pad portion 52 as shown in Fig. 1(a). In the position B above, the upper portion of the sealing layer 101 is brought into contact with and tightly adhered to the sealing layer 105 (second sealing layer) in a partially embedded state. Thereby, the wall portion for suppressing the penetration of moisture is formed at the position B.

According to this configuration, moisture that permeates from above the electrode pad portion 52 during or after the element manufacturing process is blocked by the wall portion, and it is difficult to penetrate into the region A of the organic EL element 50. Thereby, the organic EL element 50 can be suppressed from being deteriorated by moisture, and the life thereof can be shortened. Hereinafter, the manufacturing apparatus of the organic element and the method of manufacturing the organic element of the present embodiment will be described with reference to the drawings.

[Manufacturing device for organic components]

First, the overall configuration of an apparatus for manufacturing an organic element according to an embodiment of the present invention will be described with reference to Fig. 2 . Further, the operation of the apparatus for manufacturing an organic element according to an embodiment of the present invention will be mainly described with reference to Figs. 3A to 3D. Fig. 2 is a view showing the overall configuration of an apparatus for manufacturing an organic device of the embodiment. 3A to 3D are diagrams each showing a process for manufacturing the organic element of the embodiment.

The organic component manufacturing apparatus 1 has a cleaning device (pre-treatment) 12, a transfer module (TM) 14, a vapor deposition device 16, and a transfer mold from the load lock module (LLM) 10 loaded into the substrate S. Group (TM) 18, film forming apparatus A20, transfer module (TM) 22, film forming apparatus B24, load interlocking module (LLM) 26, film forming apparatus C28, heating apparatus 30 (reflow), etching apparatus 32 The film forming apparatus D34, the lid body bonding apparatus 36, and the pad etching apparatus 38.

In the above configuration, from the loading of the interlocking module 10 to the loading of the interlocking module 26, the substrate S is processed in an in-line process in a vacuum. The transfer modules (TM) 14, 18, and 22 are means for receiving the substrate S between adjacent devices, and for example, the transfer robot can be used to transport the substrate S. The transport method by the transfer modules (TM) 14, 18, and 22 is not limited thereto, and may be carried out using a conveyor belt or a transport roller.

(substrate loading)

The load lock module 10 operates to transfer the substrate S from the outside of the device to the vacuum atmosphere cleaning device 12. One of the transferred substrates S is as shown in Fig. 3A. For example, as shown in "S0" of FIG. 3A, the transferred substrate S has formed, for example, ITO (Indium Tin Oxide), IGZO, ZnO, single-layer graphite, or the partition walls 110, 120 which are anodes. Hereinafter, the ITO is exemplified as an anode.

The anode layer 90 (anode layer) and the electrode pad portion 52 are formed of ITO. Photolithography (exposure) techniques can also be used for the formation of the partition walls 110, 120. In other words, the partition walls 110 and 120 are formed by coating (spin coating) a resin such as photosensitive organic polyimide on the substrate S, and exposing and developing the pattern. The formed partition portions 110, 120 are subjected to annealing treatment. Thereby, the moisture in the partition portions 110 and 120 is removed.

As shown in "S1" of FIG. 3A, the partition wall portion 110 is a partition wall portion for forming the organic EL element 50. The partition wall portion 120 is a partition portion for suppressing moisture permeation. However, the function of each partition portion is not limited thereto, and for example, the partition wall portion 110 also has a function of suppressing penetration of moisture.

In the present embodiment, only one partition wall portion 120 is provided between the partition wall portion 110 and the electrode pad portion 52. However, the formation pattern of the partition wall portion is not limited thereto, and a plurality of partition walls may be formed between the partition wall portion 110 and the electrode pad portion 52. For example, in FIG. 4, three partition walls 120, 130, and 140 are formed between the partition portion 110 and the metal pad portion 52 at intervals of several μm. The organic EL element 50 is formed inside the partition portion 110. The three partition portions 120, 130, and 140 are provided to surround the organic EL element 50 and the partition wall portion 110. In other words, the partition wall portions 110, 120, 130, and 140 are formed from the inner peripheral side toward the outer peripheral side around the organic EL element 50, and the electrode pad portion 52 is formed on the outermost side. Here, although only one electrode pad portion 52 is shown, the present invention is not limited thereto, and a plurality of them may be provided in the peripheral direction.

Further, the partition wall portion 110 is adjacent to an example of the first partition wall portion of the organic layer. The partition portions 120, 130, and 140 are one of the first partition wall portions and one of the first partition wall portions and the electrode pad portion so as to surround the organic layer or one of the plurality of second partition walls.

Referring back to Fig. 3A, the height of the partition walls 110 and 120 in the present embodiment is approximately the same as that of the partition wall portion, and is about 2 μm. Further, the side walls 110 and 120 have substantially the same inclination (angle). The partition wall portion 120 has a narrowed width at least compared to the partition wall portion 110 of the region A of the organic EL element 50. The partition wall portion 120 may have a width of about several μm on the base side. Further, it is preferable that the partition wall portion 120 is formed to be finer than the base side. Further, considering the partition wall portion 120 In the intermediate layer formed, the partition wall portion 120 has a trapezoidal shape and the front end side is preferably R-shaped. The middle layer will be described later.

(washed)

The cleaning device (pretreatment) 12 is to wash the substrate S that has been carried in. An example of the washing method is to generate an oxygen plasma by high-frequency discharge, and to oxidize and decompose the organic compound by the generated oxygen radicals, thereby removing oxygen radical washing of the organic substance on the surface of the substrate. Here, the method of washing the substrate S is not limited to the cleaning method performed by the cleaning device (pretreatment) 12.

(film formation of organic layer)

The vapor deposition device 16 forms an organic layer composed of a hole injection layer, a hole transport layer, a blue light-emitting layer, a red light-emitting layer, a green light-emitting layer, and an electron transport layer on the ITO 90 by a vacuum deposition method. Among them, the film formation method of the organic layer is not limited to the vapor deposition method performed by the vapor deposition device 16.

(film formation of the cathode layer)

The film forming apparatus A20 vapor-deposits, for example, silver, aluminum, an aluminum alloy, a lithium aluminum alloy, or an alloy of magnesium and silver, using a pattern cover. Thereby, the cathode layer 92 is formed on the electron transport layer. Among them, the film forming method of the cathode layer is not limited to the vapor deposition method performed by the film forming apparatus A20.

As described above, as shown in "S1" of FIG. 3A, the cathode layer 92 (cathode layer) is formed by the film forming apparatus A20, and the vapor deposition apparatus 16 is used for the ITO (anode layer) 90 and the cathode layer 92. A laminate film of an organic layer is formed therebetween. In this way, the organic EL element 50 is formed in the partition portion 110. In addition, in FIG. 3B and the following figure, illustration of the anode layer 90 and the cathode layer 92 in the organic EL element 50 is abbreviate|omitted.

(film formation of sealing layer)

The film forming apparatus B24 forms a sealing layer 101 that seals the partition walls 110 and 120 and the organic EL element 50 by CVD (Chemical Vapor Deposition) treatment. The sealing layer 101 can be formed, for example, of tantalum nitride (SiN) or by niobium oxynitride (SiON). The configuration of the film forming apparatus B24 will be described later (Fig. 10).

When the sealing layer 101 forms a tantalum nitride film, the film forming apparatus B24 is supplied with an argon (Ar) gas, a nitrogen (N ₂ ) gas, a hydrogen (H ₂ ) gas, or a decane-based gas. As the decane-based gas system, for example, a silane (SiH ₄ ) gas, a dioxane (Si ₂ H ₆ ) gas, or the like is used. It is also possible to supply ammonia (NH ₃ ) gas instead of nitrogen gas and hydrogen gas. In addition, instead of decane gas, other Si-containing gases may be supplied, for example, trimethyl decylamine (TSA) or tetraethyl orthophthalate (TEOS).

As shown in "S2" of FIG. 3B, the sealing layer 101 is formed on the partition walls 110, 120, the organic EL element 50, and the electrode pad P. The thickness of the sealing layer 101 is about 50 nm to 200 nm.

The sealing layer 101 of aluminum oxide (Al ₂ O ₃ ) can also be formed by the film forming apparatus B24. The sealing layer 101 of alumina has the advantage of high transparency. Further, the tantalum nitride layer and the aluminum oxide layer may be combined to form the sealing layer 101. In this case, for example, in order to further suppress the penetration of moisture, it is preferred to form an aluminum oxide layer having a predetermined thickness on the film of the tantalum nitride layer. The tantalum nitride layer can also be formed into a film by, for example, CVD treatment. The aluminum oxide layer can also be formed into a film by, for example, CVD treatment or ALD (Atomic Layer Deposition) treatment. The sealing layer 101 may be magnesium oxide (MgO) in addition to alumina. Further, the sealing layer 101 is an example of a first sealing layer that seals one or a plurality of partition walls and an organic layer on the anode. Further, the film forming apparatus B24 is an example of a first film forming apparatus for forming a first sealing layer (one of which is formed on the substrate or a plurality of partition walls and an organic layer on the anode).

(substrate carry out)

The load lock module 26 transfers the substrate S from the vacuum atmosphere in the film forming apparatus B24 to the outside (atmosphere).

(formation of the middle layer)

The film forming apparatus C28 coats (spins) an acrylate or a liquid material of a vinyl compound to form an intermediate layer. As a result, as shown in "S3" of FIG. 3B, the intermediate layer 103 is formed on the sealing layer 101. The intermediate layer 103 functions to protect the organic EL element 50 and to bury the foreign matter adhering to the substrate S.

The material forming the intermediate layer 103 is a liquid material having a low melting point, for example, a melting point of 100 ° C or lower. After the intermediate layer 103 is formed, a cure process is performed. UV light irradiation, electron beam irradiation, plasma hardening, or the like can be used in the cure treatment. At this time, the treatment temperature is performed in a range that does not cause damage to the organic EL element 50.

The intermediate layer 103 is a layer formed of a material having a fluid state in a fluid state. Therefore, the corner portion (protrusion portion) of the sealing layer 101 of the substrate forms a thinner film than the flat portion due to the surface tension. Therefore, as described above, the partition wall portion 120 is preferably formed to be elongated with respect to the base side. Thereby, as shown in "S3" of FIG. 3B, the thickness Th1 of the intermediate layer 103 formed on the partition portion 120 becomes thinner than the thickness Th2 of the intermediate layer 103 formed on the partition portion 110. Further, as long as the front end side of the partition wall portion 120 has an R shape, the intermediate layer 103 can be formed thinly. In addition, into The membrane device C28 is an example of a second film forming apparatus that applies the intermediate layer 103 to the first sealing layer (sealing layer 101).

The intermediate layer 103 can also be formed by thermal CVD or vapor deposition using a material of a hydrocarbon-based compound (CxHyOzNw; z, w contains 0). The intermediate layer 103 composed of a hydrocarbon-based compound (hydrocarbon material) is formed, for example, by a vacuum deposition method. Specifically, the hydrocarbon material which is solid at room temperature is heated to evaporate the hydrocarbon material, and the vapor of the hydrocarbon material is transported by argon gas or the like, and is supplied to the sealing layer 101. When the vapor of the hydrocarbon material is supplied, the vapor of the hydrocarbon material supplied to the sealing layer 101 is condensed by maintaining the substrate S at a temperature lower than the melting point of the hydrocarbon material. Thereby, the intermediate layer 103 can be formed. The thickness of the intermediate layer 103 is, for example, 0.5 to 2.0 μm.

The molecular formula, molecular weight and melting point of the representative hydrocarbon material used in the intermediate layer 103 are shown in Table 1 below. In order to suppress deterioration of the organic EL element 50, it is preferred to use a hydrocarbon material having a melting point of about 100 ° C or less. When a hydrocarbon material having a melting point of about 50 ° C or less is used, deterioration of the organic EL element 50 can be more reliably suppressed, which is more preferable.

In this case, the intermediate layer 103 may be melted by a reflow treatment as described below. In the case where the intermediate layer 103 is formed, although the reflow treatment can be performed, the etch-back treatment of the next process can be performed without performing the reflow treatment. In the case where the reflow treatment is performed, the intermediate layer (CxHy) 103 can fill the gap of foreign matter such as particles existing on the surface of the substrate, and the film property of the sealing layer 105 which is subsequently formed can be particularly improved.

(reflow)

The reflow treatment is performed by the heating device 30. The heating device 30 irradiates infrared rays to the film-formed intermediate layer 103 to heat the hydrocarbon material. Thereby, the hydrocarbon material of the intermediate layer 103 can be softened or melted, and the intermediate layer 103 can be planarized by reflow. The arrow indicated by "S3'" in Fig. 5 is an infrared ray. The heating temperature of the intermediate layer 103 is performed in a temperature range in which the hydrocarbon material is softened or melted and the organic EL element 50 is not deteriorated. If the hydrocarbon material is softened or melted, the intermediate layer 103 having good coverage and flatness can be formed.

The substrate S is usually attached with impurity particles. If the amount of the impurity particles is about 3 μm, the substrate S and the impurity particles may not be covered by the intermediate layer 103 to cause a defect portion due to the influence of the shape of the impurity particles. Once the defect is generated, there is a possibility that the moisture permeability is lowered, and there is a fear of adverse effects on the film formation process of the post-process, rather than the preference. That is, the intermediate layer 103 is planarized by softening or melting the hydrocarbon material. Thereby, the defective portion can be buried. In particular, the corner portions of the intermediate layer 103 on the partition walls 110, 120 can be flattened. In the case where the reflow treatment is performed after the film formation of the intermediate layer 103, the post-film hardening treatment of the intermediate layer 103 is preferably carried out after the reflow treatment.

(etch back)

The etching apparatus 32 shown in Fig. 2 introduces oxygen (O ₂ ) gas, rare gas (Ar, etc.) into the chamber and supplies high-frequency power, thereby ionizing and dissociating the oxygen gas to generate oxygen plasma. The etching device 32 etches back the intermediate layer 103 by the generated oxygen plasma. The thickness of the intermediate layer 103 is the thinnest on the partition wall portion 120 based on the shape of the partition walls 110 and 120. Therefore, as shown in "S4" of FIG. 3C, at the time of etch back of the intermediate layer 103, the top of the sealing layer 101 of the position B is exposed from the intermediate layer 103 at the earliest. The intermediate layer 103 has a higher etching rate than the sealing layer 101 due to the selection. Thus, at the position B, as long as the top of the sealing layer 101 continues to etch back after being exposed from the intermediate layer 103, the front end portion of the sealing layer 101 protrudes from the intermediate layer 10.

Further, when the intermediate layer 103 is etched back, the sealing layer 101 becomes a resist to prevent the organic EL element 50 from being etched or damaged.

As described above, the etch back process of the present embodiment is carried out to such an extent that at least a part of the sealing layer 101 on at least the outermost partition portion 120 among the partition portions 110 and 120 is exposed from the intermediate layer 103 to the next process. The degree to which the film-forming sealing layer is in contact.

(film formation of sealing layer)

Next, the film forming apparatus D34 shown in FIG. 2 forms a sealing layer 105 on the intermediate layer 103 by CVD (Chemical Vapor Deposition) treatment. The sealing layer 105 can be formed, for example, of tantalum nitride (SiN), or can be formed of cerium oxynitride (SiON), magnesium oxide (MgO), or the like.

As shown in "S5" of FIG. 3C, the sealing layer 105 on the intermediate layer 103 is in contact with the sealing layer 101 exposed from the intermediate layer 103 at the position B. The thickness of the sealing layer 105 is about 100 nm to 1000 nm. The film forming apparatus D34 can also be combined with the ALD process to form the sealing layer 105 in addition to the CVD process.

Further, the sealing layer 105 is an example of a second sealing layer formed by etching back the intermediate layer 103. Further, the film forming apparatus D34 is an example of a third film forming apparatus which forms the sealing layer 105 after the etch back of the intermediate layer 103 and makes the formed sealing layer 105 and the sealing layer 101 exposed from the intermediate layer 103 come into contact.

As shown in "S5" of FIG. 3C, at the position B on the partition portion 120, the upper portion of the sealing layer 101 is in close contact (contact) with respect to the sealing layer 105 in a partially embedded state. Thereby, at least the outermost partition portion, that is, the partition portion 120 closest to the position B of the electrode pad portion 52, can form a wall portion in which the sealing layer 101 and the sealing layer 105 are in close contact with each other. Thereby, even if moisture penetrates from above the electrode pad portion 52 as shown in FIG. 1(a), it is blocked by the wall portion formed by the sealing layer 101 and the sealing layer 105, so that it is difficult to penetrate into the organic EL element. . As a result, it is possible to suppress the decrease in the light-emitting luminance of the organic EL element 50 due to moisture, and the occurrence of a non-light-emitting region called a dark spot. According to the present embodiment, deterioration of the organic EL element 50 due to moisture can be suppressed, and the life of the organic element can be prevented from being shortened, and the reliability of the product can be improved.

As shown in "S6" of Fig. 3D, the bonding apparatus 36 shown in Fig. 2 is attached such that the covering sheet 107 covers the organic EL element 52 with an adhesive (adhesive layer). Thereby, the mechanical strength of the organic element can be maintained, and the organic EL element 52 can be protected. The cover sheet 107 is formed of transparent glass or plastic.

In the etching apparatus 38, the cover sheet 107 is used as a cover, and the sealing layer 105, the intermediate layer 103, and the sealing layer 101 on the electrode pad portion 52 are etched so that the electrode pad portion 52 forms an opening. Thereby, the manufacture of the organic component is completed.

When the electrode pad portion 52 forms an opening, moisture enters from above the electrode pad portion 52. However, as described above, moisture is blocked by the wall portion formed by the sealing layer 101 and the sealing layer 105, and the organic EL element 50 cannot be infiltrated. Thereby, deterioration of the organic EL element 50 can be suppressed, and the life of the organic element can be prevented from being lowered.

The manufacturing apparatus 1 of the organic element shown in FIG. 2 further has a control unit 51. The control unit 51 includes a CPU (Central Processing Unit) 53, a ROM (Read Only Memory) 54, a RAM (Random Access Memory) 56, an HDD (Hard Disk Drive) 58, and an interface 59. The CPU 52 controls the entire system based on various recipes stored in the above-described memory area. The control information of each device is set in the recipe, that is, the program time, the chamber temperature, the pressure (gas exhaust), the high-frequency power or voltage, various gas flows, and the timing of the transfer.

(Modification 1)

In "S5" of FIG. 3C, the sealing layer 101 and the sealing layer 105 are brought into close contact with each other at the position B on the partition portion 120 to form a wall portion to block moisture from infiltrating from the electrode pad portion 52 side. On the other hand, in the first modification, as shown by "S4" in Fig. 6, not only the position B on the partition wall portion 120 but also the positions C and D on the partition wall portion 110 are sealed by the sealing layer 101. The wall portion formed by the layer 105 blocks moisture from infiltrating from the side of the electrode pad portion 52. At this time, as shown in "S4" of FIG. 6, etch back is performed at the positions B, C, and D until the sealing layer 101 is exposed from the intermediate layer 103. Thereby, as shown in "S5" of FIG. 6, the sealing layer 105 and the sealing layer 101 exposed from the intermediate layer 103 are in contact at positions B, C, and D.

According to the related configuration, the water from the electrode pad portion 52 side can be more reliably blocked by the wall portions formed at the positions B, C, and D, and the organic EL element 50 cannot be infiltrated. Thereby, deterioration of the organic EL element 50 can be more reliably suppressed.

(Modification 2)

Further, in the second modification, as shown in "S4" of Fig. 7, not only the positions B, C, and D on the partition walls 110, 120 but also the positions E and F where the partition portion 110 is not formed are such that the sealing layer 101 is formed. It is in contact with the sealing layer 105. In the process, as shown in "S4" of Fig. 7, etchback is performed at positions B, C, D, E, and F until the sealing layer 101 is exposed from the intermediate layer 103. In this case, the intermediate layer 103 is formed only in the side surface of the barrier portion. Thereby, as shown in "S5" of Fig. 7, the sealing layer 105 formed on the intermediate layer 103 is brought into contact with the sealing layer 101 exposed from the intermediate layer 103 at the positions B, C, D, E, and F.

According to the related configuration, the water can be more reliably blocked by the wall portions formed at the positions B, C, D, E, and F, and the penetration of moisture into the organic EL element 50 can be more reliably suppressed.

(Modification 3)

In the third modification, the formation of the intermediate layer and the etch back are repeatedly performed. For example, for the substrate on which the intermediate layer 103 is formed after the sealing layer 101 having a thickness of 100 to 500 nm is formed, the operation of FIG. 7 is performed. The etchback of the intermediate layer 103 shown in "S4". Thereafter, as shown in "S4-1" of Fig. 8A, the intermediate layer 103 is formed again. Next, as shown in "S4-2" of Fig. 8A, the intermediate layer 103 which has been formed is further etched back. Next, as shown in "S5-1" of Fig. 8B, a sealing layer 105 is formed. Here, the formation of the intermediate layer 103 and the etch back are performed twice in succession, but the formation of the intermediate layer 103 and the number of times of eclipse are not limited thereto.

Next, as shown in "S6-1" of FIG. 8C, the cover sheet 107 is attached by an adhesive (adhesive layer) so as to cover the organic EL element 52. Thereby, the mechanical strength of the organic element can be maintained and the organic EL element 52 can be protected. The cover sheet 107 is formed of transparent glass or plastic.

In the etching apparatus 38, the cover sheet 107 is used as a cover, and the sealing layer 105, the intermediate layer 103, and the sealing layer 101 on the electrode pad portion 52 are etched so that the electrode pad portion 52 forms an opening. Thereby, the manufacture of the organic component is completed.

According to the manufacture of the organic component of Modification 3, the sealing layer 105 is formed after the formation of the intermediate layer 103 and the etch back. In this manner, by coating and etching back the intermediate layer 103 a plurality of times, the surface shape can be made smoother, so that the covering property when the sealing layer 105 (second sealing layer) is formed is good, and pinholes and the like can be suppressed. occur. As a result, it is possible to further inhibit the penetration of moisture into the organic component.

In particular, in the production of the organic component of the third modification, when the sealing layer 105 is formed on the substrate having the uneven surface on the bottom surface, the covering property can be made good, which is an effect.

According to the manufacture of the organic elements of the above-described embodiments and the modifications 1 to 3, since the metal cover is not used, there is little concern about particles. In addition, the lithography (exposure process) performed by the pattern formation is only one time, and the simplification and cost reduction can be achieved, and it is easy to correspond to a large-area substrate. Further, since the existing devices such as the LCD can be used in the manufacture of the organic components of the above-described embodiments and the modifications 1 to 3, and no new equipment investment is required, the manufacturing cost can be suppressed.

Further, the wall portion formed by the sealing layer 101 and the sealing layer 105 is not limited to the position shown in the above embodiment and the modifications 1 and 2. The wall portion can be formed by etch back in a range that does not impair the function of the intermediate layer 103 to expose the position of the sealing layer 101. Among them, the wall portion is formed on the outer wall portion, that is, the position closer to the electrode pad portion 52, and the effect of suppressing the penetration of moisture is higher, which is preferable. Therefore, it is preferable to form the wall portion formed by the sealing layer 101 and the sealing layer 105 on at least one of the outermost partition portions formed on one of the substrates S or the plurality of partition walls. Wherein, the sealing layer 101 and the dense layer may be formed on at least one of the partition walls of one or a plurality of partition walls. The wall portion formed by the sealing layer 105. For example, the partition wall portion other than the partition wall portion 110 for forming the organic EL element 50 may not be formed, and the wall portion may be formed on the partition wall portion 110.

The overall configuration and operation of the manufacturing apparatus 1 for an organic element of the present embodiment have been described above. Accordingly, the intermediate layer 103 is etched back until the sealing layer 101 is exposed from the intermediate layer 103. The sealing layer 105 formed after the etch back is brought into contact with the exposed sealing layer 101, thereby forming a wall portion. The moisture is blocked by the relevant wall portion, and it is difficult to penetrate into the organic EL element 50. Therefore, deterioration of the organic EL element 50 due to moisture can be prevented, whereby the life of the organic element can be maintained and the reliability can be improved. In particular, according to the present embodiment, not only the product can be blocked, but also the moisture can be blocked even during the production process, and the deterioration of the organic EL element can be more reliably prevented.

Further, according to the method of manufacturing an organic component of the present embodiment, the cover for forming the intermediate layer 103 is not required, and the alignment of the cover and the substrate is not required. Therefore, in the present embodiment, an element having a sealing structure having a high sealing performance can be formed at a low cost without reducing the throughput.

(Device configuration example: etching device)

Next, an example of the configuration of the etching apparatus 32 for the etch back intermediate layer 103 will be described with reference to FIG. 9. Further, the apparatus configuration of the film forming apparatus B24 (film forming apparatus D34) for forming the sealing layer 101 (sealing layer 105) will be described. An example will be described with reference to FIG.

The etching device 32 has a chamber C in which the inside is kept airtight and electrically grounded. The chamber C has a cylindrical shape and is formed of, for example, anodized aluminum or the like on the inner wall surface of the chamber. The etching device 32 is connected to a gas supply source (not shown). In the case where the intermediate layer 103 is etched back, a gas such as an oxygen-containing gas is introduced into the chamber C from a gas supply source.

A mounting table 202 on which the substrate S is placed is provided inside the chamber C. The mounting table 202 is supported on a support table. The mounting table 202 also functions as a lower electrode. That is, the mounting table 202 is connected to the high-frequency power source 210 via a matching device (not shown). Thereby, the mounting table 202 is supplied with high-frequency power for bias from a high-frequency power source 210 at a predetermined frequency (for example, 2 MHz).

An upper electrode 204 is provided above the mounting table 202 at a position opposed to the mounting table 202. The upper electrode 204 is connected to the high frequency power supply 208 via a matching device (not shown). Thereby, the upper electrode 204 is supplied with high frequency power for plasma generation at a predetermined frequency (for example, 40 MHz) from the high frequency power source 208.

An exhaust pipe 206 is provided at the bottom of the chamber C. An exhaust device (not shown) is connected to the exhaust pipe 206. The exhaust system exhausts the gas of the chamber C.

(Device configuration example: film forming device)

Next, a configuration example of the film forming apparatus B24 (film forming apparatus D34) for forming the sealing layer 101 (sealing layer 105) will be described with reference to FIG. Fig. 10 is a longitudinal sectional view showing an example of a configuration of a film forming apparatus. Since the film forming apparatus D34 and the film forming apparatus B24 have the same configuration, the film forming apparatus B24 will be described below. Further, the film forming apparatus B24 of the present embodiment is a CVD apparatus which generates a plasma using a spoke slit antenna.

The film forming apparatus B24 is provided with a bottomed cylindrical chamber C having, for example, an upper opening. The chamber C is formed of, for example, an aluminum alloy. In addition, the chamber C is in a grounded state. A mounting table 131 serving as a placing portion on which the substrate S is placed is provided at a substantially central portion of the bottom of the chamber C, for example.

The mounting table 131 can also be buried in the electrode plate 132. The electrode plate 132 can also be connected to a DC voltage source 133. The DC voltage source 133 can also supply a voltage to the electrode plate 132. Thereby, an electrostatic force is generated on the surface of the mounting table 131, and the substrate S is electrostatically adsorbed on the mounting table 131. Further, the mounting table 131 may be connected to the high frequency power supply 135 via the matching unit 134. The stage 131 may also apply a bias electric field from the high frequency power of the high frequency power source 135. The high frequency power source 135 can also use, for example, a frequency of 400 kHz to 13.56 MHz. The high-frequency power source 135 can apply a bias electric field to the stage 131 by outputting high-frequency power. Further, the high-frequency power source 135 can apply a bias electric field to the substrate S placed on the mounting table 131 and the film formed on the substrate S by outputting high-frequency power.

A dielectric window 141 is provided in the upper portion of the chamber C, for example, via a sealing member 140 such as an O-ring for ensuring airtightness. The chamber C is blocked by the dielectric window 141. A spoke slit antenna 142 as a plasma excitation portion for supplying a microwave for plasma generation is provided above the dielectric window 141. Further, the dielectric window 141 is, for example, alumina (Al ₂ O ₃ ). In a related case, the dielectric window 141 is resistant to nitrogen trifluoride (NF ₃ ) gas used in dry cleaning. Further, in order to further improve the resistance to the nitrogen trifluoride gas, the surface of the alumina of the dielectric window 141 may be coated with yttrium oxide (Y ₂ O ₃ ), spinel (MgAl ₂ O ₄ ), or nitrided. Aluminum (AlN).

The spoke slit antenna 142 is provided with a substantially cylindrical antenna body 150 having an opening below. A disk-shaped slit plate 151 (a plurality of slits are formed) is provided at an opening portion below the antenna body 150. A dielectric plate 152 formed of a low-loss dielectric material may also be disposed on the upper portion of the slit plate 151 in the antenna body 150. A coaxial waveguide 154 connected to the microwave oscillating device 153 is connected to the upper surface of the antenna body 150. The microwave oscillating device 153 is disposed outside the chamber C to generate microwave oscillations at a predetermined frequency (for example, 2.45 GHz) to the spoke slit antenna 142. By the related configuration, the vibration is excited from the microwave oscillation device 153. The undulated microwave is transmitted into the spoke slit antenna 142. After the dielectric plate 152 is compressed and short-wavened, the slit plate 151 is used to generate a circularly polarized wave, which is carried out from the dielectric window 141 toward the chamber C. radiation.

A material gas supply structure 60 having a substantially flat plate shape is provided between the mounting table 131 in the chamber C and the spoke slit antenna 142. The material gas supply structure 60 has a circular shape in which its outer shape is formed to be at least larger than the diameter of the substrate S as viewed in a plan view. By the material gas supply structure 60, the plasma generation region R1 on the side of the spiral slit antenna 142 and the material gas dissociation region R2 on the side of the mounting table 131 are partitioned in the chamber C. Further, the material gas supply structure 60 is preferably made of, for example, alumina. In this case, since alumina is a ceramic, it has high heat resistance and high strength compared to a metal material such as aluminum. Further, since the plasma generated by the plasma generation region R1 is not trapped, sufficient ion irradiation can be obtained for the glass substrate. Further, a dense film can be formed by performing sufficient ion irradiation on the film on the glass substrate. Further, the material gas supply structure 60 is resistant to the nitrogen trifluoride gas used for dry cleaning. Further, in order to improve the resistance to the nitrogen trifluoride gas, the surface of the alumina of the material gas supply structure 60 may be coated with ruthenium oxide, spinel or aluminum nitride.

As shown in FIG. 11A, the material gas supply structure 60 is composed of a series of material gas supply pipes 61 arranged in a substantially lattice shape on the same plane. The material gas supply pipe 61 is formed in a square shape in a longitudinal section as viewed in the axial direction. A plurality of openings 62 are formed in the gap between the material gas supply pipes 61. The plasma generated in the plasma generation region R1 on the upper side of the material gas supply structure 60 can enter the material gas dissociation region R2 on the stage 131 side through the opening 62.

A plurality of material gas supply ports 63 are formed on the lower surface of the material gas supply pipe 61 of the material gas supply structure 60 as shown in FIG. These material gas supply ports 63 are evenly arranged in the surface of the material gas supply structure 60. A gas pipe 65 that can communicate with a material gas supply source 64 provided outside the chamber C is connected to the material gas supply pipe 61. The source gas supply source 64 is, for example, a silane (SiH ₄ ) gas and a hydrogen (H ₂ ) gas which are each a decane-based gas, and is used as a source gas. The gas pipe 65 is provided with a valve 66 and a mass flow controller 67. By the related configuration, the raw material gas supply source 64 introduces a predetermined flow rate of the decane gas and the hydrogen gas to the source gas supply pipe 61 through the gas pipe 65. Further, the decane gas and the hydrogen gas system are supplied from the respective material gas supply ports 63 to the raw material gas dissociation region R2 below.

The first plasma excitation gas supply port 70 that supplies the plasma excitation gas of the plasma raw material is formed on the inner circumferential surface of the chamber C on the outer circumferential surface of the plasma generation region R1. The first plasma excitation gas is supplied The feed port 70 is formed in a plurality of portions, for example, along the inner circumferential surface of the chamber C. The first plasma excitation gas supply pipe 72 is connected to the first plasma excitation gas supply pipe 72 (for example, the side wall portion penetrating the chamber C and the first plasma excitation gas supply provided outside the chamber C) Source 71 is connected). A valve 73 and a mass flow controller 74 are provided in the first plasma excitation gas supply pipe 72. According to the related configuration, the plasma excitation gas of a predetermined flow rate can be supplied from the side in the plasma generation region R1 in the chamber C. In the present embodiment, the first plasma excitation gas supply source 71 is sealed with, for example, an argon (Ar) gas as a plasma excitation gas.

For example, the plasma excitation gas supply structure 80 having a substantially flat plate shape having the same configuration as the material gas supply structure 60 is disposed on the area of the material gas supply structure 60. As shown in FIG. 11B, the plasma excitation gas supply structure 80 is composed of a second plasma excitation gas supply pipe 81 arranged in a lattice shape. Further, for the plasma excitation gas supply structure 80, for example, alumina can be used. Even in this case, since the alumina is a ceramic as described above, it has high heat resistance and high strength compared to a metal material such as aluminum. Further, since the plasma generated by the plasma generation region R1 is not collected, sufficient ion irradiation can be obtained for the glass substrate. Further, a dense film can be formed by performing sufficient ion irradiation on the film on the glass substrate. Further, the plasma excitation gas supply structure 80 is resistant to the nitrogen trifluoride gas used for dry cleaning. Further, in order to improve the resistance to the nitrogen trifluoride gas, the surface of the alumina of the plasma excitation gas supply structure 80 may be coated with ruthenium oxide or spinel.

As shown in FIG. 10, a plurality of second plasma excitation gas supply ports 82 are formed on the upper surface of the second plasma excitation gas supply pipe 81. The plurality of second plasma excitation gas supply ports 82 are disposed in the plane of the plasma excitation gas supply structure 80. Thereby, the plasma excitation gas can be supplied from the lower side to the upper side in the plasma generation region R1. Further, in the present embodiment, the plasma excitation gas is, for example, argon gas. Further, in addition to the argon gas, nitrogen (N ₂ ) gas of the material gas is supplied from the plasma excitation gas supply structure 80 to the plasma generation region R1.

An opening portion 83 is formed in a gap between the grid-shaped second plasma excitation gas supply tubes 81, and the plasma generated in the plasma generation region R1 can pass through the plasma excitation gas supply structure 80 and the material gas supply structure. The body 60 enters the raw material gas dissociation region R2 below.

A gas pipe 85 that communicates with the second plasma excitation gas supply source 84 provided outside the chamber C is connected to the second plasma excitation gas supply pipe 81. For example, the second plasma excitation gas supply source 84 is individually sealed with an argon gas as a plasma excitation gas and a nitrogen gas as a source gas. to The gas pipe 85 is provided with a valve 86 and a mass flow controller 87. According to the related configuration, the nitrogen gas and the argon gas of a predetermined flow rate can be supplied to the plasma generation region R1 from the second plasma excitation gas supply port 82.

An exhaust port 190 for exhausting the atmosphere in the chamber C is provided at both sides of the mounting table 131 at the bottom of the collet chamber C. An exhaust pipe 192 that communicates with an exhaust device 191 such as a turbo molecular pump is connected to the exhaust port 190. The inside of the chamber C can be maintained at a predetermined pressure (for example, 10 Pa to 60 Pa described later) by the exhaust gas from the exhaust port 190.

The control unit 100 is provided in the above film forming apparatus B24. The control unit 100 is, for example, a computer, and has a program storage unit (not shown). The control unit 100 may be integrated with the control unit 51 shown in Fig. 2 or may be an individual body. The film forming process (the film forming process for the sealing film 101 on the substrate S in the film forming apparatus B24 and the film forming process for the sealing film 105 on the substrate S in the film forming apparatus D34) are stored in the program storage unit. Program. Further, the program storage unit stores a program for controlling the film formation processing of the film forming apparatuses B24 and 34 by controlling the supply of the material gas, the supply of the plasma excitation gas, the radiation of the microwave, the operation of the drive system, and the like. Further, the program storage unit also stores a program for controlling the timing of application of the bias electric field applied by the high-frequency power source 135. In addition, the aforementioned program can also be recorded in a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like, and can be recorded in a computer-readable memory medium. This memory medium is mounted to the control unit 100. The timing of supply of the material gas, supply of the plasma excitation gas, microwave radiation, and bias electric field will be described later.

Next, a method of forming a SiN film by the film forming apparatus B24 configured as described above will be described. Similarly, the film forming apparatus D34 can form a SiN film. Further, the SiN film formed in the film forming apparatus B24 is an example of the sealing film 101, and the SiN film formed in the film forming apparatus D34 is an example of the sealing film 105.

First, for example, at the start of the film forming apparatus B24, the supply flow rate of the argon gas is adjusted. Specifically, the supply flow rate of the argon gas supplied from the first plasma excitation gas supply port 70 and the supply flow rate of the argon gas supplied from the second plasma excitation gas supply port 82 can be supplied to the plasma. The concentration of the argon gas in the generation region R1 is adjusted to be uniform. In the supply flow rate adjustment, for example, the exhaust device 191 is operated, and the supply of the plasma excitation gas supply ports 70 and 82 is set in the state in which the air flow in the chamber C is the same as that in the actual film forming process. The argon gas is supplied at a proper flow rate. Further, the test substrate was actually subjected to film formation by the supply flow rate setting, and it was examined whether or not the film formation was uniformly performed in the substrate surface. When the argon gas in the plasma generation region R1 When the concentration of the body is uniform, since the film formation system in the surface of the substrate is uniformly performed, the result of the inspection is that the film formation is not uniformly performed in the surface of the substrate, and the supply flow rate of each argon gas is changed, and the test is again performed. The substrate is subjected to film formation. In this way, the supply flow rate from each of the plasma excitation gas supply ports 70 and 82 is set such that the film formation is uniformly performed in the substrate surface and the argon gas concentration in the plasma generation region R1 is uniform.

After the supply flow rate of each of the plasma excitation gas supply ports 70 and 82 is set, the film formation process of the substrate S in the film forming apparatus B24 is started. First, the substrate S is carried into the chamber C, and is adsorbed and held on the mounting table 131. At this time, the temperature of the substrate S is maintained at 100 ° C or lower, for example, 50 ° C to 100 ° C. Next, the exhaust gas in the chamber C is started by the exhaust device 191, and the pressure in the chamber C is depressurized to a predetermined pressure (for example, 10 Pa to 60 Pa), and is maintained in this state. In addition, the temperature of the substrate S is not limited to 100 ° C or less, and may be determined by the material of the organic EL element or the like as long as the temperature of the organic EL element is not impaired.

Here, if the pressure in the chamber C is less than 20 Pa, the SiN film may not be formed on the substrate S. Further, if the pressure in the chamber C exceeds 60 Pa, the reaction between gas molecules in the gas phase is increased to generate particles. Therefore, the pressure in the chamber C is maintained at 10 Pa to 60 Pa as described above.

When the pressure is reduced in the chamber C, the argon gas is supplied from the side first plasma excitation gas supply port 70 in the plasma generation region R1, and the second plasma excitation gas supply port 82 is provided from below. A nitrogen gas and an argon gas are supplied. At this time, the concentration of the argon gas in the plasma generation region R1 is uniformly maintained in the plasma generation region R1. Further, a nitrogen gas system is supplied at a flow rate of, for example, 21 sccm. 142 to generate a plasma directly below the region R1, for example, 2.45GHz microwave frequency radiation of 2.5W / cm ² ~ 4.7W / cm ² of power from the radial line slot antenna. By the radiation of the microwave, the argon gas is plasmatized in the plasma generation region R1, and the nitrogen gas is radicalized (or ionized). Further, at this time, the microwave traveling below is absorbed by the generated plasma. As a result, a high-density plasma is generated in the plasma generation region R1.

The plasma generated in the plasma generation region R1 passes through the plasma excitation gas supply structure 80 and the source gas supply structure 60 into the raw material gas dissociation region R2 below. In the material gas dissociation region R2, decane gas and hydrogen gas are supplied from the respective material gas supply ports 63 of the material gas supply structure 60. At this time, the decane gas is supplied at a flow rate of, for example, 18 sccm, and the hydrogen gas is supplied at a flow rate of, for example, 64 sccm. The decane gas and the hydrogen gas are respectively dissociated by the plasma entering from above. Then, the SiN film is deposited on the substrate S by the radicals and the radicals of the nitrogen gas supplied from the plasma generating region R1.

(Example of laminated structure of sealing layer)

When the sealing layers 101 and 105 are changed from a single layer film to a multilayer film, the sealing effect of the interface-changing substance entering path is improved, and a sealing layer in which moisture is more difficult to penetrate can be formed.

A method of forming a sealing layer for a multilayer film will be briefly described with reference to FIG. Here, the film forming method of the sealing layer 101 will be described, but the sealing layer 105 may be formed in the same manner. FIG. 12 is a view showing a state in which the application timing of the high-frequency power and the film formation state of each timing are performed in an example of the laminated structure of the sealing layer 101. Here, an example in which a SiN film (tantalum nitride film) is formed as the sealing layer 101 will be described.

The control unit 100 controls the timing of application of the high-frequency power from the high-frequency power source 135 shown in FIG. 12 in accordance with the timing chart shown in FIG. 12 when the sealing layer 101 is formed. Thereby, the bias electric field to the stage 131 is controlled. Specifically, the control unit 100 starts the supply of argon (Ar) gas, nitrogen (N ₂ ) gas, hydrogen (H ₂ ) gas, decane-based gas, and microwave (μ wave) power at a certain timing. The control unit 100 may supply ammonia (NH ₃ ) gas instead of the nitrogen gas and the hydrogen gas. Further, the control unit 100 may supply other Si-containing gas instead of the decane gas.

After the supply of the argon gas, the nitrogen gas, the hydrogen gas, and the decane gas, the supply of the microwave (μ wave) power is started slightly. In this manner, by supplying the power of the microwave (μ wave) slightly after the supply of the gas, it is possible to prevent the substrate S from being damaged and to form a film. The SiN layer 101a is laminated on the organic EL element 50 at a time t1 after the supply of the gas and the supply of the microwave power at the time t0 of stabilization. At this time, the thickness of the SiN layer 101a is about 30 to 100 nm.

When the supply of the above various gases and microwave power is continued, the bias high frequency power (RF bias) is applied from the high frequency power source 135 between time t1 and time t2. Thereby, the ions in the plasma are pulled to the SiN layer 101a, the ion plating is applied to the SiN layer 101a, the SiN layer 101b is grown in a deposition direction different from the SiN layer 101a, and the pinholes occurring in the SiN layer 101a are caused by Non-linear shapes to grow. At this time, the thickness of the SiN layer 101b is about 10 to 50 nm.

In this manner, the multilayer film sealing layer in which the SiN layer 101a and the SiN layer 101b are alternately laminated can be formed by periodically turning on and off the application of the bias voltage with the application of the high-frequency power.

According to this, since the entry path of the substance can be changed by the interface between the layers of the SiN layer 101a and the SiN layer 101b, the sealing effect can be improved, and the sealing layer 101 in which moisture is more difficult to penetrate can be formed. Alternatively, a laminated structure may be produced by intermittently supplying silane (SiH ₄ ) gas during film formation.

Although the manufacturing method of the organic element, the manufacturing apparatus of the organic element, and the organic element are described above by way of examples, the present invention is not limited to the above embodiment, and can be within the scope of the present invention. Various deformations and improvements are made. Further, the above embodiments and modifications can be combined in a range not contradictory.

For example, the etching apparatus of the present invention is not limited to the CCP (Capacitively Coupled Plasma) etching apparatus shown in FIG. 9, and a plasma device using a spoke-line slit antenna or an inductively coupled plasma (ICP: Inductively Coupled Plasma) device, HWP (Helicon Wave Plasma) device, Electron Cyclotron resonance plasma (ECR) device, and the like.

Further, the film forming apparatus (film forming apparatus A to D) of the present invention is not limited to the CVD apparatus using the spoke slit antenna shown in Fig. 10, and a capacitively coupled plasma (CCP: Capacitively Coupled Plasma) apparatus or induction may be used. A coupled plasma (ICP: Inductively Coupled Plasma) device, a Helix Wave Plasma device (HWP) device, an Electron Cyclotron resonance Plasma (ECR) device, and the like.

50‧‧‧Organic EL components

52‧‧‧Electrical electrode pad

101‧‧‧ sealing layer

103‧‧‧Intermediate

105‧‧‧ Sealing layer

120‧‧‧ next door

A‧‧‧ area

S‧‧‧ glass substrate

Claims (10)

A method of manufacturing an organic device, comprising: a process of loading a substrate having an intermediate layer formed on a first sealing layer for sealing one or a plurality of partition walls and an organic layer on an anode; and forming a substrate on the substrate The intermediate layer is etched back; the etchback process is performed until at least a portion of the first sealing layer on the at least one of the partition walls is exposed from the intermediate layer to be formed in the next process The extent to which the second sealing layer of the film is in contact. The method of manufacturing an organic component according to claim 1, wherein the etchback process is performed from at least a portion of the first sealing layer to the at least outermost partition portion of the one or plural partition portions from the intermediate layer The extent of contact with the second sealing layer which can be formed in the next process is exposed. The method of manufacturing an organic device according to claim 1 or 2, wherein the loading process carries a substrate on which the first partition wall portion and the first plurality of partition walls are formed; wherein the first partition wall portion is adjacent to the substrate In the organic layer, the one or a plurality of second partition portions are provided on the outer side of the first partition wall portion and surround the organic layer between the first partition wall portion and the electrode pad portion. The method of manufacturing an organic component according to claim 3, wherein the width of the one or a plurality of second partition portions is formed to be narrower than a width of the first partition wall portion. The method for producing an organic component according to the third aspect of the invention, wherein the one or the plurality of second partition portions are formed on the front end side to be thinner than the base side. The method of manufacturing an organic component according to claim 1 or 2, wherein the etchback process etches back the intermediate layer which is planarized after reflow. An apparatus for manufacturing an organic device, comprising: a first film forming apparatus that forms a first sealing layer that seals one of the substrate or a plurality of partition walls and an organic layer on the anode; and the second film forming apparatus Applying an intermediate layer to the first sealing layer; and etching means for etching back the intermediate layer; the etching means etching back the intermediate layer to at least one of the one or more partition walls At least a portion of the upper first sealing layer is exposed from the intermediate layer to such an extent that it can come into contact with the second sealing layer formed in the next process. The apparatus for manufacturing an organic component according to claim 7, further comprising a third film forming apparatus for forming the second sealing layer after etch back the intermediate layer, so that the second sealing layer is exposed from the intermediate layer The first sealing layer is in contact with each other. An organic element is formed on a first sealing layer that seals one or a plurality of partition walls and an organic layer on an anode, and an intermediate layer is formed such that at least a part of the first sealing layer on at least one partition portion is exposed; The second sealing layer on the intermediate layer is formed to be in contact with the first sealing layer exposed from the intermediate layer. The organic component according to claim 9, wherein the first sealing layer and the second sealing layer are in contact with each other so as to surround the organic layer on at least the outermost partition wall portion.