KR20170118019A - Organic device manufacturing method and organic device manufacturing apparatus - Google Patents

Abstract

Thereby preventing moisture from penetrating into the organic EL element. The method comprising: bringing a substrate having an intermediate layer formed on a first sealing layer that seals one or a plurality of partition portions and an organic layer on a positive electrode; and a step of etching back the intermediate layer formed on the substrate, Wherein at least a part of the first sealing layer on at least one of the one or more partition walls is exposed from the intermediate layer to a degree that the second sealing layer can be brought into contact with the film in the next step A method for manufacturing an organic device is provided.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing an organic device and an apparatus for manufacturing the same. BACKGROUND OF THE INVENTION [0002]

A manufacturing method of an organic device, and an apparatus for manufacturing an organic device.

In recent years, for example, organic EL devices using electroluminescence (EL) have been developed. The organic EL element is advantageous in that it consumes less electric power than a cathode ray tube and is self-luminous, and has a better viewing angle than a liquid crystal display.

On the other hand, organic EL devices are vulnerable to moisture. Therefore, when moisture enters from the defective portion of the organic EL element, the light emission luminance is lowered or a non-light emitting region called a dark spot is generated. For this reason, for example, a sealing layer having moisture permeability may be formed on the surface of the organic EL element. In this case, an inorganic layer such as silicon nitride, for example, may be used as a sealing layer which can be formed by a low-temperature process which does not damage the organic EL element and which requires moisture resistance.

However, in the sealing layer, moisture may invade from the open side of the electrode pad, and moisture entering may deteriorate the organic EL element, shortening the service life.

It has also been proposed to seal the organic EL element by a multilayered sealing layer in which at least one intermediate layer (flattening layer) and a barrier layer are laminated on the organic EL element (see, for example, Patent Document 1).

Japanese Patent Laid-Open Publication No. 2012-253036

However, in Patent Document 1, a mask is required for film formation of the intermediate layer, and further, the position adjustment between the mask and the substrate is required, so that the throughput is lowered and the manufacturing cost is increased.

In view of the above-mentioned problem, in one aspect, a device having a sealing structure with a high sealing performance is intended to be formed at a low cost, without deteriorating the throughput.

According to an aspect of the present invention, there is provided a method of manufacturing a plasma display panel, comprising: bringing a substrate having an intermediate layer formed on a first sealing layer sealing one or a plurality of partition portions and an organic layer on a positive electrode; Wherein at least a part of the first sealing layer on at least one of the one or more of the one or the plurality of partition walls is formed by a second sealing layer formed in the next step Wherein the etching is performed from the intermediate layer to a contactable extent.

According to another aspect of the present invention, there is provided a first film forming apparatus for forming one or a plurality of partition portions formed on a substrate and a first sealing layer for sealing an organic layer on the anode, And an etching apparatus for etching back the intermediate layer by a plasma, wherein the etching apparatus includes a first sealing member for sealing at least one of the one or more partition members, And at least a part of the layer is etched back to the intermediate layer until the intermediate layer is exposed from the intermediate layer to such an extent that the second sealing layer can be brought into contact with the second sealing layer to be formed in the next step.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a first sealing layer for sealing an organic layer on one or a plurality of partitions and an anode; And a second sealing layer on the intermediate layer is formed to contact the first sealing layer exposed from the intermediate layer.

According to one aspect, a device having a sealing structure with a high sealing performance can be formed at a low cost and without lowering the throughput.

FIG. 1A is a schematic cross-sectional view of an organic device according to one embodiment, and FIG. 1B is a schematic cross-sectional view of an organic device to be compared.
2 is an overall configuration diagram of an apparatus for manufacturing an organic device according to an embodiment.
3A is a view illustrating an organic EL device formed on a substrate having partition walls according to an exemplary embodiment of the present invention.
FIG. 3B is a view showing an intermediate layer formed by forming a first sealing layer on a substrate provided with an organic EL device according to an embodiment.
3C is a view showing an etch-back of the intermediate layer according to one embodiment to form a second seal layer.
FIG. 3D is a view showing an organic EL device according to an embodiment and its periphery covered with a cover sheet and opened by etching an electrode pad portion.
4 is an example of forming a partition wall portion according to an embodiment.
5 is a view for explaining the operation of reflow according to an embodiment.
6 is a view showing a second sealing layer formed by etching back the intermediate layer in Modification 1 of one embodiment.
7 is a view showing a second sealing layer formed by etching back the intermediate layer in Modification 2 of one embodiment.
FIG. 8A is a view showing repeated formation of the intermediate layer and etch-back in Modification 3 of the embodiment. FIG.
8B is a view showing a second sealing layer formed after repeatedly performing the etch-back in Modification 3 of the embodiment.
FIG. 8C is a view showing an organic EL device and its periphery covered with a cathode in the modification 3 of one embodiment, and the electrode pad portion is opened by etching. FIG.
9 is a schematic cross-sectional view showing an example of an etching apparatus according to an embodiment.
10 is a schematic sectional view showing an example of a film forming apparatus according to an embodiment.
11A is a view showing an example of a raw material gas supply structure according to an embodiment.
11B is a view showing an example of a plasma excitation gas supply structure according to an embodiment.
12 is a view for explaining an example of a laminated structure of a sealing layer according to an embodiment.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. Note that, in the present specification and drawings, the same reference numerals are assigned to substantially the same constituent elements, and redundant description is omitted.

 <Start>

Generally, organic EL devices are vulnerable to moisture. When moisture enters from the defective portion of the organic EL element, the luminescence brightness is lowered, or a non-light emitting region called a dark spot is generated. Therefore, a sealing layer having moisture permeability is formed on the surface of the organic EL element. 1A and 1B, a sealing layer 101 for sealing the organic EL element 50 (a sealing resin for sealing the organic EL element 50) (hereinafter referred to simply as a substrate S) is provided on a glass substrate S 1 sealing layer) is formed.

However, even if the sealing layer 101 is provided, as shown in Fig. 1B, when water enters from above the electrode pad portion 52 and enters the organic EL element 50 during or after the device manufacturing process , The organic EL element 50 is deteriorated to shorten the lifetime of the element.

1A, the organic EL device 50 and the electrode pad portion 52 are formed so as to prevent moisture from entering the organic EL element 50. In this case, And the upper portion of the sealing layer 101 at the position B above the partition wall portion (bank) 120 is provided in a state in which the sealing layer 105 (the second sealing layer) So that they are in close contact with each other. Thereby, a wall portion for suppressing moisture intrusion is formed at the position (B).

According to such a constitution, the moisture penetrating from above the electrode pad portion 52 during or after the device manufacturing process is blocked by the wall portion, and it is difficult for the organic EL element 50 to penetrate into the region A Loses. Thereby, it is possible to suppress the deterioration of the life of the organic EL element 50 due to moisture. Hereinafter, an apparatus for manufacturing an organic device and a method for manufacturing an organic device according to the present embodiment will be described with reference to the drawings.

[Organic device manufacturing apparatus]

First, an overall configuration of an apparatus for manufacturing an organic device according to an embodiment of the present invention will be described with reference to Fig. The operation of the apparatus for manufacturing an organic device according to an embodiment of the present invention will be described mainly with reference to Figs. 3A to 3D. 2 is an overall configuration diagram of an organic device manufacturing apparatus according to the present embodiment. 3A to 3D are diagrams showing respective steps for manufacturing an organic device according to the present embodiment.

The organic device manufacturing apparatus 1 includes a cleaning apparatus (pre-treatment) 12, a transfer module (TM) 14, a deposition apparatus The transfer module TM 22, the film forming device B 24, the load lock module LLM 26, the film forming device C (20), the transfer module (TM) 18, the film forming device A 20, 28, a heating device 30 (reflow), an etching device 32, a film forming device D 34, a joining device 36 of a cover and an etching device 38 of a pad.

In the above configuration, from the load lock module 10 to the load lock module 26 is an inline device configuration for processing the substrate S in vacuum. The transfer modules (TM) 14, 18, and 22 are devices for transferring the substrate S between adjacent devices, and may transfer the substrate S using, for example, a transfer robot. However, the conveying method performed by the transfer modules (TM) 14, 18, 22 is not limited to this,

(Substrate loading)

The load lock module 10 functions to transfer the substrate S from the outside of the device to the cleaning device 12 in a vacuum atmosphere. An example of the substrate S to be delivered is shown in Fig. For example, as shown in "S0" in FIG. 3A, the substrate S to be transferred is provided with an anode such as ITO (Indium Tin Oxide), IGZO, ZnO, 110, and 120 are already formed. Hereinafter, the description will be made by taking ITO as an example of the anode.

The anode layer 90 (anode layer) and the electrode pad portion 52 are formed of ITO. Photolithography (exposure) techniques may be used to form the barrier ribs 110 and 120. That is, the partition walls 110 and 120 are formed by coating (spin-coating) a photosensitive organic polyimide or the like on the substrate S, and exposing and developing in a pattern shape. The formed partition wall portions 110 and 120 are annealed. As a result, moisture in the partition walls 110 and 120 is removed.

3A, the partition wall portion 110 is a partition wall portion for forming the organic EL element 50. As shown in Fig. The partition wall portion 120 is a partition wall portion for suppressing the intrusion of moisture. However, the function of each partition wall is not limited to this. For example, the partition wall 110 also has a function of suppressing the invasion of moisture.

In the present embodiment, only one partition 120 is provided between the partition 110 and the electrode pad 52. However, the formation pattern of the partition wall portion is not limited to this, and a plurality of partition wall portions may be formed between the partition wall portion 110 and the electrode pad portion 52. [ For example, in FIG. 4, three partition walls 120, 130 and 140 are formed at intervals of several micrometers between the partition wall portion 110 and the electrode pad portion 52. An organic EL element 50 is formed on the inner side of the barrier rib portion 110. The three partition walls 120, 130 and 140 are provided so as to surround the organic EL element 50 and the partition wall portion 110. That is, partition walls 110, 120, 130, and 140 are formed from the inner periphery side to the outer periphery side with the center of the organic EL element 50, and the electrode pad portion 52 is formed on the outermost side. Here, although one electrode pad portion 52 is shown, a plurality of electrode pad portions 52 may be provided in the circumferential direction.

The partition wall portion 110 is an example of the first partition wall portion adjacent to the organic layer. The barrier ribs 120, 130, and 140 are examples of one or a plurality of second barrier ribs provided outside the first barrier ribs and surrounding the organic layer between the first barrier ribs and the electrode pad portions.

Referring back to FIG. 3A, the shape of the barrier ribs will be described. In this embodiment, the height of the barrier ribs 110 and 120 is approximately the same and about 2 .mu.m. Also, the inclination (angle) of the side walls of the partition walls 110 and 120 is substantially the same. The partition wall portion 120 has a width narrower than the partition wall portion 110 of the region A of the organic EL element 50 at least. The partition wall portion 120 may have a width of about several micrometers at the base end side. Further, it is preferable that the front end side of the partition wall portion 120 is formed to be narrower than the base end side. In consideration of the intermediate layer formed on the partition part 120, the partition part 120 preferably has an R shape at the tip side rather than a trapezoid shape. The intermediate layer will be described later.

(washing)

The cleaning device (pre-treatment) 12 cleans the loaded substrate S. An example of the cleaning method is oxygen radical cleaning for generating an oxygen plasma by high frequency discharge and oxidizing and decomposing an organic compound using the produced oxygen radical to remove organic matter on the surface of the substrate. However, the method of cleaning the substrate S is not limited to a cleaning method such as that performed by the cleaning apparatus (pre-treatment) 12.

 (Film formation of organic layer)

The deposition apparatus 16 deposits an organic layer composed of a hole injection layer, a hole transport layer, a blue luminescent layer, a red luminescent layer, a green luminescent layer and an electron transport layer on the ITO 90 by a vacuum deposition method. However, the deposition method of the organic layer is not limited to the deposition method such as that performed by the deposition apparatus 16.

(Film formation of negative electrode layer)

The film forming apparatus A 20 uses a pattern mask to deposit, for example, silver, aluminum, an aluminum alloy, a lithium aluminum alloy, or an alloy of magnesium and silver. Thereby, the cathode layer 92 is formed on the electron transporting layer. However, the method of forming the cathode layer is not limited to the same deposition method as that performed by the film forming apparatus A 20.

3A, the cathode layer 92 (cathode layer) is formed by the film forming apparatus A 20 and the ITO (anode layer) (anode layer) is formed by the evaporation apparatus 16 90 and the cathode layer 92 is formed. In this manner, the organic EL element 50 is formed in the partition wall portion 110. 3B and subsequent figures, the illustration of the anode layer 90 and the cathode layer 92 in the organic EL element 50 is omitted.

(Film formation of the sealing layer)

The film forming apparatus B 24 forms a sealing layer 101 for sealing the partition walls 110 and 120 and the organic EL element 50 by CVD (Chemical Vapor Deposition) processing. The sealing layer 101 may be formed of, for example, silicon nitride (SiN) or silicon nitride oxide (SiON). The configuration of the film forming apparatus B 24 will be described later (FIG. 10).

An argon (Ar) gas, a nitrogen (N ₂ ) gas, a hydrogen (H ₂ ) gas, and a silane-based gas are supplied to the film forming apparatus B 24 when the silicon nitride film is formed as the sealing layer 101. As the silane-based gas, for example, silane (SiH ₄ ) gas or disilane (Si ₂ H ₆ ) gas or the like is used. Ammonia (NH ₃ ) gas may be supplied instead of the nitrogen gas and the hydrogen gas. In place of the silane gas, another Si-containing gas such as tricirylamine (TSA) or tetraethylorthosilicate (TEOS) may be supplied.

The sealing layer 101 is formed on the partition walls 110 and 120, the organic EL element 50 and the electrode pad portion 52 as shown in "S2" in FIG. 3B. The thickness of the sealing layer 101 is about 50 nm to 200 nm.

The sealing film 101 of alumina (Al ₂ O ₃ ) may be formed by the film forming apparatus B (24). The sealing layer 101 of alumina has an advantage of high transparency. Further, the sealing layer 101 may be formed by combining the silicon nitride layer and the alumina layer. In this case, for example, it is preferable to form the alumina layer on the thin film of the silicon nitride layer until the thickness becomes a predetermined thickness, in order to further suppress the penetration of moisture. The silicon nitride layer may be formed by CVD, for example. The alumina layer may be formed by, for example, CVD treatment or ALD (Atomic Layer Deposition) treatment. The sealing layer 101 may be magnesium oxide (MgO) in addition to alumina. The sealing layer 101 is an example of a first sealing layer that seals one or a plurality of partition portions and an organic layer on the anode. The film forming apparatus B 24 is an example of a first film forming apparatus for forming one or a plurality of partition portions formed on a substrate and a first sealing layer for sealing an organic layer on the anode.

(Substrate removal)

The load lock module 26 transfers the substrate S from the vacuum atmosphere in the film forming apparatus B 24 to the outside (atmosphere).

(Formation of intermediate layer)

The film forming apparatus C (28) applies an acrylic acid ester or a vinyl compound liquid material (spin coat) to form an intermediate layer. As a result, an intermediate layer 103 is formed on the sealing layer 101 as shown in &quot; S3 &quot; in Fig. 3B. The intermediate layer 103 protects the organic EL element 50 and also functions to burn foreign substances adhered to the substrate S. [

As the material for forming the intermediate layer 103, a liquid material having a low melting point, for example, a melting point of 100 占 폚 or less is used. After the intermediate layer 103 is formed, curing treatment is performed. For curing (curing) treatment, UV light irradiation, electron beam irradiation, plasma curing and the like can be used. At this time, the treatment temperature is set within a range that does not damage the organic EL element 50. [

The intermediate layer 103 is a layer formed of a liquid material having fluidity. Therefore, in the corner portions (protruding portions) of the sealing layer 101 in the lower layer due to the surface tension, the film becomes thinner than the flat portion. Therefore, as described above, it is preferable that the front end side of the partition wall portion 120 is formed to be narrower than the base end side. 3B, the thickness Th1 of the intermediate layer 103 formed on the partition wall portion 120 is smaller than the thickness Th2 of the intermediate layer 103 formed on the partition wall portion 110 ). If the front end side of the partition 120 is R-shaped, it is preferable that the intermediate layer 103 can be formed thin. The film forming apparatus C 28 is an example of a second film forming apparatus for applying the intermediate layer 103 on the first sealing layer (sealing layer 101).

An intermediate layer 103, heat can be carbonized, by CVD or vapor deposition Subtotal compound, may be formed by the material of (C _x H _y O _z N _w z, w comprises a 0). The intermediate layer 103 made of a hydrocarbon-based compound (hydrocarbon material) is formed by, for example, a vacuum deposition method. Specifically, the hydrocarbon material in a solid state at room temperature is heated to evaporate the hydrocarbon material, and the vapor of the hydrocarbon material is transported by a carrier gas such as argon gas and supplied onto the sealing layer 101 . The vapor of the hydrocarbon material supplied onto the sealing layer 101 is condensed by keeping the substrate S at a temperature lower than the melting point of the hydrocarbon material when supplying the vapor of the hydrocarbon material. Thereby, the intermediate layer 103 can be formed. The thickness of the intermediate layer 103 is, for example, 0.5 to 2.0 占 퐉.

The molecular formula, molecular weight, and melting point of a typical hydrocarbon material used for the intermediate layer 103 are shown in Table 1 below. In order to suppress deterioration of the organic EL element 50, it is preferable to use a hydrocarbon material having a melting point of about 100 占 폚 or less. The use of a hydrocarbon material having a melting point of about 50 占 폚 or less is preferable because deterioration of the organic EL element 50 can be more reliably prevented.

Molecular formula Molecular Weight Melting point (캜) C ₂₀ H ₄₂ 282 36 C ₂₁ H ₄₄ 296 42 C ₂₂ H ₄₆ 310 46 C ₂₃ H ₄₈ 324 47 C ₂₄ H ₅₀ 338 51 C ₂₅ H ₅₂ 352 54 C ₂₈ H ₅₈ 396 62 C ₃₀ H ₆₂ 422 66 C ₄₀ H ₈₂ 562 82 C ₅₀ H ₁₀₂ 702 94 C ₆₀ H ₁₂₂ 842 98

In this case, the intermediate layer 103 may be dissolved by the following reflow process. In the case of forming the intermediate layer 103, the reflow process may be performed, but the etch back process of the next process may be performed without performing the reflow process. In the case where the reflow process is performed, the interlayer (C _x H _y ) 103 buries the gaps of particles or the like existing on the surface of the substrate, thereby remarkably improving the film property of the sealing layer 105 to be formed next .

(Reflow)

The reflow process is performed by the heating device 30. [ The heating apparatus 30 heats the hydrocarbon material by irradiating infrared rays to the intermediate layer 103 formed. Thereby, the hydrocarbon material of the intermediate layer 103 is softened or melted, and the intermediate layer 103 is planarized by the reflow action. In Fig. 5, "S3 '" indicates an infrared ray. The heating temperature of the intermediate layer 103 is in a temperature range in which the hydrocarbon material is softened or melted and the organic EL element 50 is not deteriorated. By softening or fusing the hydrocarbon material, a smooth intermediate layer 103 having good coverage can be formed.

The substrate S is usually provided with impurity particles. The impurity particle may have a size of about 3 mu m, and depending on the shape of the impurity particle, the substrate S and the impurity particle may not be covered with the intermediate layer 103 and a defect portion may be generated. If a defect portion is formed, there is a fear that the moisture permeability is lowered, and there is a possibility that the film forming treatment in the subsequent step may be adversely affected. Thus, the intermediate layer 103 is planarized by softening or melting the hydrocarbon material. Thereby, the defect portion can be buried. In particular, corner portions of the intermediate layer 103 on the partition walls 110 and 120 can be flattened. In the case where the reflow process is performed after forming the intermediate layer 103, the curing (curing) process after the formation of the intermediate layer 103 is preferably performed after the reflow process.

(Etchback)

The etching apparatus 32 shown in Fig. 2 introduces an oxygen (O ₂ ) gas or a rare gas (Ar, etc.) into the chamber and supplies high frequency power to ionize and dissociate the oxygen gas to generate oxygen plasma. The etching apparatus 32 etches back the intermediate layer 103 by the generated oxygen plasma. The thickness of the intermediate layer 103 becomes the thinnest on the partition wall portion 120 based on the shape of the partition wall portions 110 and 120. [ 3C, the uppermost portion of the sealing layer 101 at the position B is exposed from the intermediate layer 103 as soon as possible during the etchback of the intermediate layer 103. As a result, The etching rate of the intermediate layer 103 is higher than that of the sealing layer 101 by the selection ratio. Therefore, when the etch-back is continued even after the uppermost portion of the sealing layer 101 is exposed from the intermediate layer 103 at the position B, the front end portion of the sealing layer 101 protrudes from the intermediate layer 103.

Further, when the intermediate layer 103 is etched back, the sealing layer 101 becomes a stopper, and the organic EL element 50 is prevented from being etched or damaged.

As described above, the etch back process according to the present embodiment is a process in which at least a part of the sealing layer 101 on the partition part 120 located at least outermost among the partition parts 110 and 120 is formed in the next step And is exposed from the intermediate layer 103 to such an extent that it can be brought into contact with the sealing layer.

(Film formation of the sealing layer)

Subsequently, the film forming apparatus D (34) shown in Fig. 2 forms a sealing layer 105 on the intermediate layer 103 by CVD (Chemical Vapor Deposition) processing. The sealing layer 105 may be formed of, for example, silicon nitride (SiN), silicon nitride oxide (SiON), magnesium oxide (MgO), or the like.

The sealing layer 105 on the intermediate layer 103 comes into contact with the sealing layer 101 exposed from the intermediate layer 103 at the position B as shown in " The thickness of the sealing layer 105 is about 100 nm to 1000 nm. The film forming apparatus D (34) may be formed by forming the sealing layer 105 in combination with the ALD process in addition to the CVD process.

The sealing layer 105 is an example of the second sealing layer formed after the intermediate layer 103 is etched back. The film forming apparatus D 34 is formed by forming the sealing layer 105 after the etch back of the intermediate layer 103 and forming the sealing layer 105 in contact with the sealing layer 101 exposed from the intermediate layer 103 Is a typical example of the third film formation apparatus.

The upper portion of the sealing layer 101 is brought into close contact with (brought into contact with) the sealing layer 105 in a partly buried state at the position B on the partition wall portion 120 as shown in &quot; S5 & have. This makes it possible to form a wall portion in which the sealing layer 101 and the sealing layer 105 closely contact each other at least at the outermost partition wall portion, that is, at the partition wall portion 120 at the position B nearest to the electrode pad portion 52 can do. 1A, even when water penetrates from above the electrode pad portion 52, the moisture is blocked by the wall portion formed of the sealing layer 101 and the sealing layer 105, It becomes difficult to do. As a result, the decrease in the light emission luminance of the organic EL element 50 due to moisture or the generation of the non-light emitting region called dark spots is suppressed. Thus, according to the present embodiment, deterioration of the organic EL element 50 due to moisture can be suppressed, the life of the organic device can be prevented from shortening, and the reliability of the product can be enhanced.

The bonding apparatus 36 shown in Fig. 2 attaches the cover sheet 107 to cover the organic EL element 50 with an adhesive (adhesive layer), as shown in "S6" in Fig. 3D. Thereby, the mechanical strength of the organic device can be maintained and the organic EL element 50 can be protected. The cover sheet 107 is made of transparent glass or plastic.

The etching apparatus 38 etches the sealing layer 105, the intermediate layer 103 and the sealing layer 101 on the electrode pad portion 52 using the cover sheet 107 as a mask, . Thereby, the production of the organic device is completed.

By opening the electrode pad portion 52, moisture penetrates from above the electrode pad portion 52. However, the moisture is blocked by the wall portion formed of the sealing layer 101 and the sealing layer 105, and can not enter the organic EL element 50, as described above. Thereby, deterioration of the organic EL element 50 can be suppressed, and the life of the organic device can be prevented from being lowered.

The organic device manufacturing apparatus 1 shown in Fig. 2 further has a control section 51. Fig. The control unit 51 includes a CPU (Central Processing Unit) 53, a ROM (Read Only Memory) 54, a RAM (Random Access Memory) 56, a HDD (Hard Disk Drive) . The CPU 52 controls the entire system according to various recipes stored in the memory area. In the recipe, the process time, the temperature in the chamber, the pressure (gas exhaust), the high frequency power or voltage, various gas flow rates, and the delivery timing are set as the control information of each device.

(Modified Example 1)

3C, the sealing layer 101 and the sealing layer 105 are brought into close contact with each other at the position B on the partition wall portion 120 to form a wall portion, whereby the moisture from the electrode pad portion 52 side The intrusion was blocked. On the other hand, in Modification 1, as shown in "S4" in FIG. 6, not only the position B on the partition 120, but also the positions C and D on the partition 110, 101 and the sealing layer 105, the penetration of moisture from the electrode pad portion 52 side is blocked. At this time, as shown in "S4" of FIG. 6, etching back is performed at positions B, C and D until the sealing layer 101 is exposed from the intermediate layer 103. 6, the sealing layer 105 is brought into contact with the sealing layer 101 exposed from the intermediate layer 103 at positions B, C, and D, respectively.

According to such a configuration, the water from the electrode pad portion 52 side is more reliably blocked by the wall portion formed at the positions B, C and D, and can not enter the organic EL element 50. As a result, deterioration of the organic EL element 50 can be suppressed more reliably.

(Modified example 2)

7, not only the positions B, C and D on the partition walls 110 and 120 but also the positions where the partition walls 110 are not formed E and F, the sealing layer 101 and the sealing layer 105 are in contact with each other. Etching is performed in the manufacturing process until the sealing layer 101 is exposed from the intermediate layer 103 at positions B, C, D, E and F as shown by "S4" in FIG. In this case, the intermediate layer 103 is formed only on the side surface of the wall portion. 7, the sealing layer 105 to be formed on the intermediate layer 103 is formed so as to cover the sealing layer 101 exposed from the intermediate layer 103 and the positions B, C, D , E, F).

According to such a configuration, the wall portion formed at the positions B, C, D, E, and F can more reliably block moisture, and can more reliably inhibit intrusion into the organic EL element 50. [

(Modification 3)

In Modification 3, the formation of the intermediate layer and the etch-back are repeated. For example, an etch-back of the intermediate layer 103 shown in "S4" in FIG. 7 is performed on the substrate having the intermediate layer 103 formed thereon after the sealing layer 101 having a thickness of 100 to 500 nm is formed. Thereafter, as shown in "S4-1" of FIG. 8A, the intermediate layer 103 is formed again. Subsequently, as shown in "S4-2" of FIG. 8A, the formed intermediate layer 103 is further etched back. Next, as shown in "S5-1" of FIG. 8B, a sealing layer 105 is formed. Here, the formation of the intermediate layer 103 and the etch-back are repeated twice, but the formation of the intermediate layer 103 and the number of repetitions of the etch-back are not limited thereto.

Subsequently, as shown in "S6-1" of FIG. 8C, the cover sheet 107 is attached with an adhesive (adhesive layer) so as to cover the organic EL element 50. Then, Thereby, the mechanical strength of the organic device can be maintained and the organic EL element 50 can be protected. The cover sheet 107 is made of transparent glass or plastic.

The etching apparatus 38 etches the sealing layer 105, the intermediate layer 103 and the sealing layer 101 on the electrode pad section 52 using the cover sheet 107 as a mask to form the electrode pad section 52, . Thereby, the production of the organic device is completed.

According to the production of the organic device according to Modification 3, the sealing layer 105 is formed after repeating the formation of the intermediate layer 103 and the etch-back. As described above, the application of the intermediate layer 103 and the etch-back are repeated a plurality of times to make the shape of the surface smoother and improve the coverage when the sealing layer 105 (second sealing layer) is formed, And the like can be suppressed. As a result, penetration of moisture into the organic element can be further suppressed.

Particularly, in the production of the organic device according to Modification 3, there is an effect that the coverage is improved at the time of forming the sealing layer 105 on the substrate having the unevenness on the surface of the base layer.

According to the fabrication of the organic device according to the above embodiment and Modifications 1 to 3, the metal mask is not used, so there is less concern about particles. Further, the lithography (exposure process) by pattern formation is only one time, so that it can be made simple and low in cost, and it is also easy to cope with a large area substrate. In addition, since existing facilities such as LCD can be used for manufacturing the organic device according to the above-described embodiment and Modifications 1 to 3, it is possible to suppress the manufacturing cost without requiring new facility investment.

The wall portion formed of the sealing layer 101 and the sealing layer 105 is not limited to the position specified in the embodiment and Modifications 1 and 2. The wall portion can be formed at a position where the sealing layer 101 is exposed by performing an etch-back in such a range that the function of the intermediate layer 103 is not impaired. However, the more the wall portion is formed on the outer side partition wall portion, that is, the position closer to the electrode pad portion 52, the higher the effect of suppressing the invasion of moisture is preferable. Therefore, it is preferable to form a wall portion formed of the sealing layer 101 and the sealing layer 105 on the partition portion located at least at the outmost one of the one or a plurality of the partition portions formed on the substrate S. However, a wall portion formed of the sealing layer 101 and the sealing layer 105 may be formed on at least one of the one or a plurality of the partition portions. For example, the wall portion may be formed on the partition wall portion 110 without forming the partition wall portion other than the partition wall portion 110 for forming the organic EL element 50. [

The overall configuration and operation of the organic device manufacturing apparatus 1 according to the present embodiment have been described above. According to this, the intermediate layer 103 is etched back until the sealing layer 101 is exposed from the intermediate layer 103. The sealing layer 105 formed after the etch-back is brought into contact with the exposed sealing layer 101, thereby forming the wall portion. Moisture is blocked by such a wall portion, and it becomes difficult to intrude into the organic EL element 50. [ Therefore, deterioration of the organic EL element 50 due to moisture can be prevented, whereby the lifetime of the organic device can be maintained and its reliability can be enhanced. Particularly, according to this embodiment, moisture can be shut off not only after commercialization but also during the manufacturing process, so that deterioration of the organic EL element can be more reliably prevented.

Further, according to the manufacturing method of the organic device according to the present embodiment, the mask for forming the intermediate layer 103 is unnecessary, and the adjustment of the position of the mask and the substrate is not necessary. Therefore, in this embodiment, a device having a sealing structure with a high sealing performance can be formed at a low cost, without lowering the throughput.

(Apparatus configuration example: etching apparatus)

Next, an apparatus configuration example of the etching apparatus 32 for etching back the intermediate layer 103 will be described with reference to Fig. 9, and a film forming apparatus B (Fig. 9) for forming the sealing layer 101 (sealing layer 105) 24 (film forming apparatus D 34) will be described with reference to Fig.

The etching apparatus 32 has an electrically grounded chamber C which is hermetically sealed inside. The chamber C is cylindrical, and is formed of, for example, an anodized aluminum or the like on the inner wall surface of the chamber. The etching apparatus 32 is connected to a gas supply source (not shown). When the intermediate layer 103 is etched back, a gas containing, for example, oxygen gas is introduced into the chamber C from the gas supply source.

Inside the chamber C, a mounting table 202 for mounting the substrate S is provided. The mounting table 202 is supported by a support. The mounting table 202 also functions as a lower electrode. That is, the table 202 is connected to the high-frequency power supply 210 via a matching unit (not shown). Thus, high frequency power for bias of a predetermined frequency (for example, 2 MHz) is supplied from the high frequency power supply 210 to the table 202.

An upper electrode 204 is provided above the mounting table 202 at a position opposite to the mounting table 202. The upper electrode 204 is connected to a high frequency power source 208 via a matching unit (not shown). Thereby, the upper electrode 204 is supplied with high-frequency power for plasma generation at a predetermined frequency (for example, 40 MHz) from the high-frequency power source 208. [

At the bottom of the chamber C, an exhaust pipe 206 is provided. An exhaust device (not shown) is connected to the exhaust pipe 206. The exhaust device evacuates the gas in the chamber (C).

(Apparatus configuration example: film forming apparatus)

Next, a configuration example of the film forming apparatus B (film forming apparatus D (34)) for forming the sealing layer 101 (sealing layer 105) will be described with reference to Fig. 10 is a longitudinal sectional view showing an example of the structure of a film forming apparatus. The film forming apparatus D (34) has the same structure as the film forming apparatus B (24), and therefore the film forming apparatus B (24) will be described below. The film forming apparatus B (24) of this embodiment is a CVD apparatus that generates plasma by using a radial line slot antenna.

The film forming apparatus B 24 has, for example, a cylindrical chamber C having an open top and a bottom. The chamber C is formed of, for example, an aluminum alloy. Further, the chamber C is grounded. At the center of the bottom of the chamber C, for example, a mounting table 131 serving as a placement unit for mounting the substrate S is provided.

The electrode plate 132 may be embedded in the mounting table 131. The electrode plate 132 may be connected to the DC voltage source 133. The DC voltage source 133 may supply a voltage to the electrode plate 132. Thereby, an electrostatic force is generated on the surface of the mounting table 131, and the substrate S is electrostatically attracted on the mounting table 131. Further, the mounting table 131 may be connected to the high frequency power supply 135 via the matching unit 134. A bias electric field may be applied to the mounting table 131 by high frequency power from the high frequency power supply 135. [ The high frequency power supply 135 may be, for example, one having a frequency of 400 kHz to 13.56 MHz. The RF power supply 135 can apply a bias electric field to the table 131 by outputting RF power. The high frequency power supply 135 outputs a high frequency power to apply the bias electric field to the substrate S placed on the mounting table 131 and the film formed on the substrate S.

In the upper opening of the chamber C, a dielectric window 141 is provided via a sealing material 140 such as an O-ring for securing airtightness. The chamber C is closed by the dielectric window 141. In the upper part of the dielectric window 141, a radial line slot antenna 142 as a plasma exciting part for supplying a microwave for plasma generation is provided. For example, alumina (Al ₂ O ₃ ) is used for the dielectric window 141. In this case, a dielectric window 141, and has a resistance to nitrogen trifluoride (NF ₃₎ gas used in the dry cleaning. (Y ₂ O ₃ ), spinel (MgAl ₂ O ₄ ), or aluminum nitride (AlN) may be coated on the surface of the alumina of the dielectric window 141 in order to improve the resistance to nitrogen trifluoride gas good.

The radial line slot antenna 142 is provided with an antenna main body 150 having a substantially cylindrical shape with a lower surface opened. In the opening of the lower surface of the antenna main body 150, a disk-shaped slot plate 151 having a plurality of slots is provided. A dielectric plate 152 formed of a low-loss dielectric material may be provided on the upper portion of the slot plate 151 in the antenna main body 150. A coaxial waveguide 154 leading to the microwave oscillator 153 is connected to the upper surface of the antenna main body 150. The microwave oscillation device 153 is provided outside the chamber C and can oscillate a microwave of a predetermined frequency, for example, 2.45 GHz, to the radial line slot antenna 142. [ With this configuration, the microwave oscillated from the microwave oscillator 153 is propagated in the radial line slot antenna 142, compressed by the dielectric plate 152 and shortened in wavelength, And is emitted from the dielectric window 141 into the chamber C. [

Between the mounting table 131 in the chamber C and the radial line slot antenna 142, for example, a substantially flat plate-shaped raw material gas supply structure 60 is provided. The raw material gas supply structure 60 is formed in a disk shape whose outer shape is at least larger than the diameter of the substrate S in plan view. The plasma generating region R1 on the side of the radial line slot antenna 142 and the source gas dissociation region R2 on the mounting table 131 side are partitioned by the raw gas supplying structure 60 in the chamber C, . As the material gas supply structure 60, for example, alumina is preferably used. In this case, since alumina is a ceramic, it has higher heat resistance or higher strength than a metal material such as aluminum. Further, since the plasma generated in the plasma generation region R1 is not trapped, sufficient ion irradiation can be obtained with respect to the glass substrate. A dense film can be formed by sufficient ion irradiation to the film on the glass substrate. Further, the material gas supply structure 60 has resistance to nitrogen trifluoride gas used in dry cleaning. Further, in order to improve resistance to nitrogen trifluoride gas, yttria, spinel, or aluminum nitride may be coated on the surface of the alumina of the raw material gas supply structure 60.

The raw material gas supply structure 60 is constituted by a series of raw material gas supply pipes 61 arranged in a substantially lattice shape on the same plane as shown in Fig. 11A. The raw material gas supply pipe (61) is formed in a rectangular shape in vertical section as viewed in the axial direction. A plurality of openings 62 are formed in the gaps between the source gas supply pipes 61. The plasma generated in the plasma generation region R1 on the upper side of the raw material gas supply structure 60 can pass through the opening portion 62 and enter the source gas dissociation region R2 on the mounting table 131 side .

On the lower surface of the raw material gas supply pipe 61 of the raw material gas supply structure 60, as shown in Fig. 10, a plurality of raw material gas supply ports 63 are formed. These raw material gas supply ports 63 are evenly arranged in the surface of the raw material gas supply structure 60. A gas pipe 65 communicating with the raw material gas supply source 64 provided outside the chamber C is connected to the raw material gas supply pipe 61. In the raw material gas supply source 64, for example, a silane-based gas of silane (SiH ₄₎ gas and hydrogen (H ₂₎ gas as source gases are separately filled with. The gas pipe 65 is provided with a valve 66 and a mass flow controller 67. With this configuration, silane gas and hydrogen gas at a predetermined flow rate are introduced into the raw material gas supply pipe 61 from the raw gas supply source 64 through the gas pipe 65, respectively. These silane gas and hydrogen gas are supplied from the respective raw material gas supply ports 63 toward the raw material gas dissociation region R2 downward.

A first plasma excitation gas supply port 70 for supplying a plasma excitation gas to be a raw material of plasma is formed on the inner peripheral surface of the chamber C covering the outer peripheral surface of the plasma generation region R1. The first plasma excitation gas supply port 70 is formed at a plurality of locations along the inner circumferential surface of the chamber C, for example. The first plasma excitation gas supply port 70 is connected to the first plasma excitation gas supply source 71 provided outside the chamber C through the side wall portion of the chamber C, And a gas supply pipe 72 for this purpose is connected. The first plasma excitation gas supply pipe 72 is provided with a valve 73 and a mass flow controller 74. With this configuration, a plasma excitation gas at a predetermined flow rate can be supplied from the side into the plasma generation region R1 in the chamber C. In the present embodiment, argon (Ar) gas is enclosed as the plasma excitation gas in the first plasma excitation gas supply source 71, for example.

On the upper surface of the raw material gas supply structure 60, for example, a substantially flat plate-shaped gas supply structure 80 for plasma excitation having the same constitution as the raw material gas supply structure 60 is stacked and disposed. The plasma excitation gas supply structure 80 is constituted by a second plasma excitation gas supply pipe 81 arranged in a lattice pattern as shown in Fig. 11B. For example, alumina may be used for the plasma excitation gas supply structure 80. Even in this case, as described above, since alumina is a ceramic, it has higher heat resistance or higher strength than a metal material such as aluminum. Further, since the plasma generated in the plasma generation region R1 is not trapped, sufficient ion irradiation can be obtained with respect to the glass substrate. A dense film can be formed by sufficient ion irradiation to the film on the glass substrate. Further, the plasma excitation gas supply structure 80 has resistance to nitrogen trifluoride gas used in dry cleaning. Further, since the resistance to nitrogen trifluoride gas is improved, the surface of the alumina of the plasma excitation gas supply structure 80 may be coated with yttria or spinel.

On the upper surface of the second plasma excitation gas supply pipe 81, a plurality of second plasma excitation gas supply ports 82 are formed as shown in Fig. These plurality of second plasma excitation gas supply ports 82 are evenly arranged in the plane of the plasma excitation gas supply structure 80. Thus, the plasma excitation gas can be supplied to the plasma generation region R1 from the lower side to the upper side. Further, in this embodiment, the plasma excitation gas is, for example, argon gas. Further, in addition to argon gas, a nitrogen (N ₂ ) gas, which is a source gas, is also supplied from the plasma excitation gas supply structure 80 to the plasma generation region R 1.

An opening 83 is formed in a gap between the lattice-shaped second plasma excitation gas supply pipes 81. The plasma generated in the plasma generation region R1 is supplied to the plasma excitation gas supply structure 80 Can pass through the raw material gas supply structure 60 and can enter the downstream raw material gas dissociation region R2.

A gas pipe 85 communicating with the second plasma excitation gas supply source 84 provided outside the chamber C is connected to the second plasma excitation gas supply pipe 81. In the second plasma excitation gas supply source 84, for example, argon gas as a plasma excitation gas and nitrogen gas as a raw material gas are individually sealed. The gas pipe 85 is provided with a valve 86 and a mass flow controller 87. With this configuration, nitrogen gas and argon gas at a predetermined flow rate can be supplied to the plasma generation region R1 from the second plasma excitation gas supply port 82, respectively.

Exhaust ports 190 for exhausting the atmosphere in the chamber C are provided on both sides of the chamber C via the mounting table 131 at the bottom. An exhaust pipe 192 connected to an exhaust device 191 such as a turbo molecular pump is connected to the exhaust port 190. By evacuation from the exhaust port 190, the inside of the chamber C can be maintained at a predetermined pressure, for example, 10 Pa to 60 Pa as described later.

The film forming apparatus B (24) is provided with a control section (100). The control unit 100 is, for example, a computer and has a program storage unit (not shown). The control unit 100 may be integrated with the control unit 51 shown in Fig. 2 or may be a separate unit. The program storage section stores the film forming process of the sealing film 101 on the substrate S in the film forming apparatus B 24 and the sealing film 105 on the substrate S in the film forming apparatus D 34 ) Is stored. In the program storage unit, the above-described supply of the raw material gas, supply of the plasma excitation gas, emission of the microwaves, operation of the driving system, and the like are controlled, and the film deposition apparatus B (24) and the film deposition apparatus D A program for realizing film formation processing is also stored. A program for controlling the application timing of the bias electric field applied by the high frequency power supply 135 is also stored in the program storage unit. The program may be recorded on a computer-readable storage medium such as a computer readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO) And may be installed in the control unit 100 from the storage medium. The supply timing of the source gas, the supply of the plasma excitation gas, the emission of the microwave, and the application timing of the bias electric field will be described later.

Next, a film forming method of the SiN film performed in the film forming apparatus B (24) configured as described above will be described. Similarly, the film forming apparatus D (34) can form a SiN film. The SiN film formed in the film forming apparatus B 24 is an example of the sealing film 101 and the SiN film formed in the film forming apparatus D 34 is an example of the sealing film 105.

First, for example, when the film forming apparatus B (24) is started, the supply flow rate of the argon gas is adjusted. Specifically, the supply flow rate of the argon gas supplied from the first plasma excitation gas supply port 70 and the supply flow rate of the argon gas supplied from the second plasma excitation gas supply port 82 are set in the plasma generation region Lt; RTI ID = 0.0 &gt; R1 &lt; / RTI &gt; In this adjustment of the supply flow rate, for example, the exhaust device 191 is operated so that the plasma excitation gas supply openings 70 and 82 are opened in the chamber C in the same manner as in the actual film formation process, Argon gas is supplied at an appropriate supply flow rate. Then, with the supply flow rate setting, it is inspected whether or not film formation is actually performed on the substrate for test, and the film formation is uniformly performed in the substrate surface. When the concentration of the argon gas in the plasma generation region R1 is uniform, the film formation is uniformly performed in the substrate surface. Therefore, when the film formation is not uniformly performed in the substrate surface, And the film formation is carried out again on the substrate for test. This is repeated to set the supply flow rates from the plasma excitation gas supply ports 70 and 82 so that the film formation is uniformly performed in the substrate surface so that the concentration of the argon gas in the plasma generation region R1 becomes uniform.

After the supply flow rates of the plasma excitation gas supply ports 70 and 82 are set, the film forming process of the substrate S in the film forming apparatus B (24) is started. First, the substrate S is carried into the chamber C and adsorbed and held on the mounting table 131. At this time, the temperature of the substrate S is maintained at 100 占 폚 or lower, for example, 50 占 폚 to 100 占 폚. Subsequently, the exhaust in the chamber C is started by the exhaust device 191, and the pressure in the chamber C is reduced to a predetermined pressure, for example, 10 Pa to 60 Pa, and the state is maintained. Further, the temperature of the substrate S is not limited to 100 占 폚 or lower, but may be a temperature at which the organic EL element is not damaged, and is determined by the material of the organic EL element or the like.

Here, if the pressure in the chamber C is lower than 20 Pa, there is a possibility that the SiN film can not be formed properly on the substrate S. If the pressure in the chamber C exceeds 60 Pa, the reaction between the gas molecules in the vapor phase increases and particles may be generated. For this reason, as described above, the pressure in the chamber C is maintained at 10 Pa to 60 Pa.

When the chamber C is depressurized, argon gas is supplied from the side first plasma excitation gas supply port 70 to the side and the second plasma excitation gas supply port 82 is supplied into the plasma generation region R1, Nitrogen gas and argon gas are supplied. At this time, the concentration of the argon gas in the plasma generating region Rl is uniformly maintained in the plasma generating region Rl. Further, the nitrogen gas is supplied at a flow rate of 21 sccm, for example. A microwave having a power of 2.5 W / cm ² to 4.7 W / cm ² is emitted from the radial line slot antenna 142 toward the plasma generation region R 1 immediately below, for example, at a frequency of 2.45 GHz. By the irradiation of the microwave, argon gas is converted into plasma in the plasma generation region R1, and the nitrogen gas is radicalized (or ionized). Further, at this time, the microwave traveling downward is absorbed by the generated plasma. As a result, a high-density plasma is generated in the plasma generating region R1.

The plasma generated in the plasma generation region R1 passes through the plasma excitation gas supply structure 80 and the gas supply structure 60 and enters the source gas dissociation region R2 downward. Silane gas and hydrogen gas are supplied from the respective raw material gas supply ports 63 of the raw material gas supply structure 60 to the raw material gas dissociation region R2. At this time, the silane gas is supplied at a flow rate of, for example, 18 sccm, and the hydrogen gas is supplied at a flow rate of, for example, 64 sccm. The silane gas and the hydrogen gas are each dissociated by the plasma that has entered from above. The SiN film is deposited on the substrate S by the radicals and the radicals of the nitrogen gas supplied from the plasma generation region R1.

(Example of Laminated Structure of Seal Layer)

When the sealing layers 101 and 105 are made of a multilayer film rather than a single layer film, the sealing effect of changing the entry path of the substance at the interface is enhanced, and a sealing layer in which moisture is less likely to penetrate can be formed.

A method of forming the sealing layer of the multilayer film will be briefly described with reference to Fig. Here, the method of forming the sealing layer 101 will be described, but the sealing layer 105 can also be formed in the same manner. 12 is a diagram showing the application timing of the high-frequency power in the example of the laminated structure of the sealing layer 101 and the film formation state at each timing. Here, an example of forming a SiN film (silicon nitride film) as the sealing layer 101 will be described.

When forming the sealing layer 101, the control unit 100 controls the application timing of the high-frequency power from the high-frequency power source 135 shown in Fig. 12 in accordance with the time chart shown in Fig. Thus, the bias electric field to the mounting table 131 is controlled. Specifically, the control unit 100 first supplies a supply of argon (Ar) gas, nitrogen (N ₂ ) gas, hydrogen (H ₂ ) gas, silane-based gas, and microwave . The control section 100 may supply ammonia (NH ₃ ) gas instead of the nitrogen gas and the hydrogen gas. Further, the control section 100 may supply another Si-containing gas instead of the silane gas.

After supplying argon gas, nitrogen gas, hydrogen gas, and silane gas, the power supply of microwaves (microwaves) is started a little later. As described above, the film can be formed without damaging the substrate S by supplying microwave (microwave) power a little later than the gas supply. The SiN layer 101a is stacked on the organic EL element 50 at the time t1 after the supply of the gas and the supply of the microwave power are stable. At this time, the thickness of the SiN layer 101a is about 30 to 100 nm.

The RF power for bias (RF bias) is applied from the RF power supply 135 between the time t1 and the time t2 while the supply of the power of the various gases and the microwave is continued. As a result, ions in the plasma are introduced into the SiN layer 101a to impart ion impact to the SiN layer 101a to grow the SiN layer 101b in a different deposition direction from the SiN layer 101a, The pinholes generated in the pinhole 101a are grown in a nonlinear shape. At this time, the thickness of the SiN layer 101b is about 10 to 50 nm.

As described above, the sealing layer of the multilayered film in which the SiN layer 101a and the SiN layer 101b are alternately stacked can be formed by periodically repeating the application of the high-frequency power for bias to be periodically repeated.

This can change the entry path of the material at the interface between the layers of the SiN layer 101a and the SiN layer 101b, so that the sealing effect is enhanced and the sealing layer 101, in which moisture is less likely to penetrate, can be formed. In addition, a silane (SiH4) gas may be intermittently supplied during film formation to form a laminated structure.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. It is also possible to combine the above embodiments and modifications within the scope not inconsistent.

For example, the etching apparatus according to the present invention is not limited to the capacitively coupled plasma (CCP) etching apparatus shown in Fig. 9, but may be applied to a plasma apparatus using a radial line slot antenna, an inductively coupled plasma (ICP (Inductively Coupled Plasma) apparatus, Helicon Wave Plasma (HWP) apparatus, and Electron Cyclotron Resonance Plasma (ECR) apparatus.

The film forming apparatuses (film forming apparatuses A to D) according to the present invention are not limited to the CVD apparatus using the radial line slot antenna shown in FIG. 10, but may be a capacitively coupled plasma (CCP) An inductively coupled plasma (ICP) apparatus, a helicon wave plasma (HWP) apparatus, and an electron cyclotron resonance plasma (ECR) apparatus.

1: Organic device manufacturing apparatus
12: Cleaning device
16: Deposition apparatus
20: Deposition apparatus A
24: Film forming apparatus B
32: etching apparatus
34: Deposition apparatus D
36: joining device,
38: etching apparatus
50: Organic EL device
51:
52: electrode pad portion
100:
101: sealing layer
103: Middle layer
105: sealing layer
110, 120, 130, 140:

Claims (6)

Carrying a substrate on which an intermediate layer is formed on one or a plurality of partition portions and a first sealing layer sealing the organic layer on the anode,
A step of etching back the intermediate layer formed on the substrate by plasma,
And a step of forming a second sealing layer on the intermediate layer,
In the etching-back process,
The tip portion of the first sealing layer on at least one of the one or the plurality of partition walls is protruded from the intermediate layer after being exposed from the intermediate layer,
Wherein the step of forming the second sealing layer comprises:
Wherein the second sealing layer is formed so that the tip portion of the first sealing layer protruding from the intermediate layer is in contact with and in close contact with the second sealing layer in a partially buried state. The method according to claim 1,
Wherein the step of carrying-
A first partition wall portion adjacent to the organic layer and a substrate having one or a plurality of second partition wall portions installed to surround the organic layer between the first partition wall portion and the electrode pad portion as an outer side of the first partition wall portion &Lt; / RTI &gt; 3. The method of claim 2,
Wherein the width of one or a plurality of the second partition walls is formed narrower than the width of the first partition wall. The method according to claim 2 or 3,
Wherein one or a plurality of the second partition walls are formed such that the tip end side is thinner than the base end side. 4. The method according to any one of claims 1 to 3,
In the etching-back process,
Wherein the intermediate layer after the reflow is planarized is etched back. A first film forming apparatus for forming one or a plurality of partition portions formed on a substrate and a first sealing layer for sealing an organic layer on the anode,
A second film forming apparatus for applying an intermediate layer on the first sealing layer,
An etching apparatus for etching back the intermediate layer by plasma,
A third film-forming apparatus for forming a second sealing layer on the intermediate layer,
The etching apparatus includes:
The intermediate layer is etched back until at least one of the one or more partition portions protrudes from the intermediate layer after the front end of the first sealing layer on at least one partition wall is exposed from the intermediate layer,
The third film forming apparatus may further include:
Wherein the second sealing layer is formed so that the tip portion of the first sealing layer protruding from the intermediate layer is in contact with and in close contact with the second sealing layer in a partially buried state.

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