TW201505213A - Optoelectronic component and method for the production thereof - Google Patents

Abstract

The invention concerns an optoelectronic component which comprises a housing with a cavity which is open towards an upper side of the housing. At the upper side of the housing the cavity has an opening area having a geometric basic shape. An optoelectronic semiconductor chip arrangement is disposed in the cavity. The optoelectronic semiconductor chip arrangement has an upper side having a first geometric shape. The geometric basic shape can be formed by extension from the first geometric shape. In addition, the opening area of the cavity has a bulge with respect to the geometric basic shape. A bonding wire is disposed between an electrical contact surface of the optoelectronic semiconductor chip arrangement and a bonding surface of the housing. The bonding surface is disposed in the bulge.

Description

Photoelectric component and method for preparing photovoltaic module

The present invention relates to an optoelectronic component according to claim 1 and a method of producing the optoelectronic component according to claim 13 of the patent application.

A variety of optoelectronic components are known from the prior art, wherein the optoelectronic semiconductor wafer is disposed in a cavity of the housing of the optoelectronic component that is open to the emitting side of the optoelectronic component. The optoelectronic semiconductor wafer and possibly the bonding wires and conversion elements are thus usually cast in a transparent or dyed potting compound, at least partially filled in the cavity. The potting material can thus form an optical reflector and serve to protect the wafer, the bond wires and the conversion element.

One difficulty in mounting a potting material into a cavity of a conventional optoelectronic component is that it is ensured that the bonding wire is used to reliably cover the bonding wire while preventing the optoelectronic semiconductor wafer or the conversion component or other radiation-emitting surface. The upper side is contaminated by the casting material.

It is an object of the invention to prepare an optoelectronic component. This object is achieved by an optoelectronic component having the features of claim 1 of the patent application. Another object of the present invention is to provide a method of preparing an optoelectronic component. This object is achieved by a method having the features of claim 13 of the patent application. Different other forms are described in the respective sub-items of the scope of the patent application.

The optoelectronic component includes a housing having a cavity that opens toward the upper side of the housing. The cavity has an open surface on the upper side of the housing which has a geometric basic form. An optoelectronic semiconductor wafer configuration is disposed in the cavity. The upper side of this optoelectronic semiconductor wafer configuration has a first geometric form. The geometric basic form can be formed by an extension of the first geometric form. The open surface of the cavity has a protrusion relative to the geometric basic form. A bonding wire is disposed between the electrical contact surface of the semiconductor wafer and the bonding surface of the housing. The joint surface is disposed in the projection.

An advantageous aspect of the optoelectronic component is that the optoelectronic semiconductor wafer arrangement is surrounded by the wall surface of the cavity at approximately the same distance on all sides of the cavity of the housing. This is achieved by "the cavity has a basic form" which is geometrically similar to the first geometric form of the semiconductor wafer configuration. Since the contour of the cavity is orientated in the form of a semiconductor wafer configuration, a small distance between the semiconductor wafer configuration and the wall surface of the cavity can be maintained on all sides of the semiconductor wafer configuration.

Another advantage of the above described optoelectronic component is that the mating surface is disposed in the raised region of the cavity. Thus, the form of the cavity differs from the geometric basic form in the region of the protrusion, which is similar to the first geometric form of the semiconductor wafer configuration. In the optoelectronic component, the bonding wire connected to the bonding surface thus extends at least in part to the raised area of the cavity and is narrowly surrounded by the wall surface of the cavity. The interface is disposed in the raised region of the cavity such that the wall of the cavity circumscribes the optoelectronic semiconductor wafer configuration in the remainder of the cavity.

In one embodiment of the optoelectronic component, the first geometric form of the upper side of the semiconductor wafer configuration is in the form of a rectangle. The semiconductor wafer configuration can thus advantageously comprise a conventional semiconductor wafer.

In one embodiment of the optoelectronic component, the open surface of the cavity has a circumscribed edge. Therefore, the shortest distance between the upper side edge of the semiconductor wafer configuration and the edge of the open surface of the cavity is between 30 microns and 600 microns at all points on the upper side edge of the semiconductor wafer configuration, preferably between 100 Between microns and 300 microns. The circumscribed edge of the cavity can thus advantageously be wrapped around the semiconductor wafer configuration.

In one embodiment of the optoelectronic component, there is a height difference of less than 60 microns in a direction perpendicular to the upper side of the housing between the upper side of the semiconductor wafer configuration and the circumscribed edge of the open surface of the cavity. The depth of the cavity of the housing of the optoelectronic component can thus be adjusted depending on the height of the semiconductor wafer configuration. Thus, the upper side of the semiconductor wafer configuration and the upper side of the housing of the optoelectronic component are substantially flush with each other.

In one embodiment of the optoelectronic component, the semiconductor wafer arrangement has an optoelectronic semiconductor wafer having an upper side. This optoelectronic semiconductor wafer can be, for example, a light emitting diode (LED) wafer. The semiconductor wafer configuration of this optoelectronic component is thus suitable for emitting electromagnetic radiation, for example, emitting visible light.

In one embodiment of the optoelectronic component, a radiation emitting surface is formed on the upper side of the optoelectronic semiconductor wafer. The electromagnetic radiation emitted by the optoelectronic semiconductor wafer of the semiconductor wafer configuration can advantageously be emitted to the upper side of the housing of the optoelectronic component.

In one embodiment of the optoelectronic component, a conversion element is arranged on the upper side of the optoelectronic semiconductor wafer. This conversion element can thus be used to convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer of the semiconductor wafer configuration. Thus, the conversion element can be formed to absorb electromagnetic radiation having a first wavelength and emit electromagnetic radiation of a second wavelength (typically longer than the first wavelength). The conversion element can thus have a buried luminescent material. The embedded luminescent material can be, for example, an organic or inorganic luminescent material. The buried luminescent material can also have quantum dots.

In one embodiment of the optoelectronic component, a potting material is disposed in a region of the cavity surrounding the semiconductor wafer configuration. This potting material can advantageously be used to protect the semiconductor wafer configuration and the bond wires described above from damage due to external mechanical influences. The potting material can also act as a reflector for the electromagnetic radiation emitted by the optoelectronic semiconductor wafer. The potting material can also be used to convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer configuration. In addition, the potting material can also be used to discharge waste heat generated by the optoelectronic semiconductor wafer configuration of the optoelectronic component from the optoelectronic semiconductor wafer configuration. Since the cavity of the housing of the optoelectronic component has a basic form that is geometrically similar to the first geometric form of the optoelectronic semiconductor wafer configuration, and the wall surface of the cavity can narrowly surround the optoelectronic semiconductor wafer configuration. The potting material disposed in a region of the cavity surrounding the semiconductor wafer configuration has a meniske that bends only in a small range between the wall surface of the cavity and the semiconductor wafer configuration. Thus, a substantially complete encapsulation of the optoelectronic semiconductor wafer configuration can be advantageously facilitated by the potting material.

In one embodiment of the optoelectronic component, the potting compound has an enamel resin and/or an epoxide. The potting material can therefore also have a mixed material comprising a resin and an epoxide. Advantageously, therefore, the potting material can be obtained cost-effectively and can be easily processed.

In one embodiment of the optoelectronic component, the potting compound has a luminescent material. This luminescent material may be, for example, a luminescent material for wavelength conversion. This potting material can thus advantageously be adapted to convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer arrangement of the optoelectronic component.

In one embodiment of the optoelectronic component, the potting material has scattering particles. For example, the potting material can have a scattering particle comprising TiO ₂ . Advantageously, the potting material has astigmatic properties and acts as a reflector for the electromagnetic radiation emitted by the optoelectronic semiconductor wafer configuration of the optoelectronic component.

In one embodiment of the optoelectronic component, the bond wires are completely embedded in the potting material. The bond wires of the optoelectronic component can thus advantageously be protected from damage by external mechanical action. The bond wires in the optoelectronic component are completely embedded in the potting material such that the cavity of the housing has a geometric basic form that is geometrically similar to the first geometric form of the upper side of the optoelectronic semiconductor wafer configuration. Thus, the form of the optoelectronic semiconductor wafer configuration is replicated outside the cavity such that there is a small distance between the optoelectronic semiconductor wafer configuration and the wall surface of the cavity on all sides of the optoelectronic semiconductor wafer configuration. Thus, between the wall surface of the cavity and the optoelectronic semiconductor wafer configuration, the potting material forms only a small meniscus on the surface, thereby allowing placement in the optoelectronic semiconductor wafer configuration and the cavity The height of the potting material between the walls decreases only a small extent between the optoelectronic semiconductor wafer arrangement and the wall surface of the cavity. Thus, the risk of "one of the above-mentioned bonding wires protruding from the casting material" is lowered.

A method of fabricating an optoelectronic component includes a step of preparing a housing having a cavity open toward an upper side of the housing, wherein the cavity has an open surface on an upper side of the housing, the geometrical basic form The open surface of the cavity further has a protrusion relative to the geometric basic form to dispose the optoelectronic semiconductor wafer arrangement in the cavity, the upper side of the semiconductor wafer configuration having a first geometric form, wherein the open surface of the cavity The geometric basic form can be formed by the extension of the first geometric form, and the protrusion is also used to configure between the electrical contact surface of the semiconductor wafer configuration and a joint surface of the housing disposed in the protrusion. A bonding wire.

The cavity of the housing of the optoelectronic component produced by the method advantageously has a geometric basic form which is geometrically similar to the first geometric form of the optoelectronic semiconductor wafer configuration. Thus, the cavity of the housing of the photovoltaic module prepared by the method can be configured to narrowly surround the optoelectronic semiconductor wafer disposed in the cavity. In the photovoltaic module prepared by the method, since the joint surface is disposed in the region of the blank area of the cavity, it is not necessary to retain the joint surface and the space required for the joint line in the remaining sections of the cavity. . In the optoelectronic component prepared by the method, since the bonding wire connected to the bonding surface extends at least partially in the blank area of the cavity, the bonding wire can advantageously be narrowly surrounded by the wall surface of the cavity .

In one embodiment of the method, the method includes the further step of applying a potting material to a region of the cavity surrounding the optoelectronic semiconductor wafer. Advantageously, the potting material applied in this region of the cavity surrounding the optoelectronic semiconductor wafer arrangement can be used to protect the optoelectronic semiconductor wafer arrangement and the bonding wires from external mechanical damage. The potting material can also act as a reflector for the electromagnetic radiation emitted by the optoelectronic semiconductor wafer. The potting material can also be used to convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer configuration. In addition, the potting material can also be used to discharge waste heat generated by the optoelectronic semiconductor wafer configuration of the optoelectronic component from the optoelectronic semiconductor wafer configuration.

The above-described features, characteristics and advantages of the present invention, as well as the form and manner (e.g., how to achieve), will become more apparent and easier to understand when combined with the description of the following embodiments and drawings.

100‧‧‧Optoelectronic components

110‧‧‧Vertical direction

200‧‧‧shell

201‧‧‧ upper side

210‧‧‧bonding line

220‧‧‧casting materials

300‧‧‧ cavity

310‧‧‧Open surface

311‧‧‧circle edge

320‧‧‧Geometric basic form

330‧‧‧ bumps

340‧‧‧ Distance (edge-wafer)

350‧‧‧Width (bump)

400‧‧‧Optoelectronic semiconductor wafer configuration

410‧‧‧ upper side

411‧‧‧ edge

420‧‧‧First geometric form

430‧‧‧Electrical contact surface

440‧‧‧Optoelectronic semiconductor wafer

441‧‧‧ upper side

450‧‧‧Transfer components

451‧‧‧ upper side

460‧‧‧Blank area

500‧‧‧First lead frame section

510‧‧‧ wafer receiving surface

520‧‧‧First welding contact surface

600‧‧‧Second lead frame section

610‧‧‧ joint surface

620‧‧‧Second welding contact surface

Each drawing is described as follows.

Figure 1 is a top view of the optoelectronic component.

Figure 2 is a cross-sectional view of the optoelectronic component.

FIG. 1 shows a top view of the optoelectronic component 100. FIG. 2 shows a cross-sectional view of the optoelectronic component 100. Here, the photovoltaic module 100 is cut along the section AA shown in FIG. Photovoltaic assembly 100 is used to emit electromagnetic radiation, for example, to emit visible light. The optoelectronic component 100 can be, for example, a light emitting diode-assembly.

Photovoltaic assembly 100 includes a housing 200. The housing 200 preferably has a plastic and can be formed, for example, by injection molding or transfer forming or other molding process.

A cavity 300 is formed on the upper side 201 of the housing 200 of the optoelectronic component 100. The cavity 300 defines a hollow region that opens toward the upper side 201 of the housing 200. The cavity 300 has an open surface 310 on the upper side 201 of the housing 200. The cavity 300 can also be considered a notch formed on the upper side 201 of the housing 200.

The open surface 310 of the housing 300 has a geometric basic form 320. In the example shown in the figures, the geometric basic form 320 is in the form of a rectangle. Moreover, unlike the geometric basic form 320, the open surface 310 can have protrusions 330. In the region of the protrusions 330, the open surface 310 extends beyond the geometric basic form 320. The projection 330 also has a rectangular form in the example shown in the figures and is connected to the geometric basic form 320 of the rectangle. The outer edge of the projection 330 continues to extend beyond the outer edge of the geometric basic form 320. The remaining outer edges of the projections 330 extend parallel to the outer edges of the geometric basic form 320. The protrusion 330 has a much smaller area than the geometric basic form 320. For example, the geometric basic form 320 may have an area that is ten times the area of the protrusions 330. Overall, the open surface 310 of the cavity 300 thus has an L-shaped configuration.

The cavity 300 can be formed, for example, in a cylindrical shape. In this case, the cavity 300 has a joint surface in the form of an open surface 310 of the cavity 300. The wall surface of the cavity 300 formed by the material of the housing 200 extends perpendicularly between the mating face of the cavity 300 and the open surface 310. However, the cavity 300 can, for example, also have the form of a truncated cone. In this case, the cavity 300 is expanded by the joint surface toward the opening surface 310 or is tapered by the joint surface toward the opening surface 310. Thus, the wall of the cavity 300 formed by the material of the housing 200 conforms to the upper side 201 of the housing 200 in a non-orthogonal manner.

An optoelectronic semiconductor wafer arrangement 400 is disposed in the cavity 300 of the housing 200 of the optoelectronic component 100. The optoelectronic semiconductor wafer configuration 400 has an upper side 410. The upper side 410 of the optoelectronic semiconductor wafer configuration 400 has a first geometric form 420 that is geometrically similar to the geometric basic form 320 of the open surface 310 of the cavity 300. This means that the geometric basic form 320 can be formed by the extension of the first geometric form 420 of the upper side 410 of the optoelectronic semiconductor wafer configuration 400. In the example shown in the figures, the upper side 410 of the optoelectronic semiconductor wafer configuration 400 has a rectangular form that is smaller than the rectangular geometric basic form 320 of the open surface 310 of the cavity 300.

The upper side 410 of the optoelectronic semiconductor wafer configuration 400 is oriented parallel to the open surface 310 of the cavity 300. Preferably, the optoelectronic semiconductor wafer arrangement 400 is disposed in the cavity 300 of the housing 200 of the optoelectronic component 100 such that the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 is approximately centrally located in the region of the open surface 310 of the cavity 300. Thus, the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer configuration 400 is nearly everywhere along the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 and the open surface 310 of the cavity 300 in a direction parallel to the upper side 201 of the housing 200. The bypass edge 311 is spaced apart by a fixed distance 340. The distance between the wraparound edge 311 of the open surface 310 of the cavity 300 and the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 may be offset only in the region of the protrusion 330 of the open surface 310 of the cavity 300. The distance 340 between the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 and the circumscribed edge 311 of the open surface 310 of the cavity 300 is preferably less than 600 microns, and particularly preferably less than 300 microns. For example, the distance 340 can be between 100 microns and 300 microns.

The protrusion 330 of the open surface 310 of the cavity 300 has a width 350. The width 350 of the bump 330 is preferably approximately equal to the distance 340 between the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer configuration 400 and the circumscribed edge 311 of the open surface 310 of the cavity 300. Since the protrusion 330 is formed adjacent to the corner region of the geometrical form 320 of the opening surface 310, in this case the protrusion 330 of the opening surface 310 of the cavity 300 is parallel to the upper side 201 of the housing 200 and The distance 340 between the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 and the circumscribed edge 311 of the open surface 310 of the cavity 300 is not increased in the direction perpendicular to the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400. Big.

The depth of the cavity 300 and the height of the optoelectronic semiconductor wafer arrangement 400 are preferably mutually adjustable in a direction 110 that is perpendicular to the upper side 201 of the housing 200. Preferably, there is a height difference of less than 60 microns between the upper side 401 of the optoelectronic semiconductor wafer arrangement 400 and the top side 201 of the housing or the circumscribed edge 310 of the open surface 310 of the cavity 300. Accordingly, the height of the optoelectronic semiconductor wafer arrangement 400 is preferably substantially less than the depth of the cavity 300 in a direction 110 perpendicular to the upper side 201 of the housing 200 such that the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 abuts the cavity 300. The opening surface 310 is disposed below the opening surface 310.

The optoelectronic semiconductor wafer configuration 400 is used to emit electromagnetic radiation, for example, to emit visible light. Thus, the electromagnetic radiation is emitted to the upper side 410 of the optoelectronic semiconductor wafer configuration 400 during operation of the optoelectronic component 100. The optoelectronic semiconductor wafer configuration 400 includes an optoelectronic semiconductor wafer 440. The optoelectronic semiconductor wafer 440 can be, for example, a light emitting diode (LED) Wafer. The optoelectronic semiconductor wafer 440 has an upper side 441. The optoelectronic semiconductor wafer 440 is formed to emit electromagnetic radiation to the upper side 441. The upper side 441 of the optoelectronic semiconductor wafer 440 thus forms a radiation emitting surface. The optoelectronic semiconductor wafer 440 can be a surface emitting semiconductor wafer or a volume emitting semiconductor wafer. In this case, the optoelectronic semiconductor wafer 440 is formed such that electromagnetic radiation can also be emitted via other external surfaces of the optoelectronic semiconductor wafer 44.

The upper side 441 of the optoelectronic semiconductor wafer 440 can form an upper side 410 of the optoelectronic semiconductor wafer configuration 400. However, other components of the optoelectronic semiconductor wafer arrangement 400 may also be disposed on the upper side 441 of the optoelectronic semiconductor wafer 440. In the examples shown in FIGS. 1 and 2, the optoelectronic semiconductor wafer arrangement 400 includes a conversion element 450 disposed on the upper side 441 of the optoelectronic semiconductor wafer 440. The upper side 451 of the conversion element 450 forms an upper side 410 of the optoelectronic semiconductor wafer arrangement 400. Unlike or in addition to the conversion element 450, the optoelectronic semiconductor wafer configuration 400 can also comprise a transparent-ceramic, glass, silicone-casting or other component. In this case, the upper side of the other components of the optoelectronic semiconductor wafer configuration 400 can form the upper side 410 of the optoelectronic semiconductor wafer configuration 400.

The conversion element 450 is used to convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer 440. Thus, the conversion element 450 can absorb electromagnetic radiation emitted by the optoelectronic semiconductor wafer 440 and emit different (typically longer) wavelengths of electromagnetic radiation. The electromagnetic radiation emitted by the conversion element 450 is then emitted to the upper side 451 of the conversion element 450. The conversion element 450 can have a buried luminescent material. For example, the conversion element 450 can be an organic or inorganic luminescent material. The embedded luminescent material may, for example, also comprise quantum dots.

The conversion element 450 is formed as a small plate that substantially completely covers the upper side 441 of the optoelectronic semiconductor wafer 440. In the corner region, the conversion element 450 of course has a blank area 460. In the region of the blank region 460, a corner region of the upper side 441 of the optoelectronic semiconductor wafer 440 remains uncovered by the conversion element 450.

The electrical contact surface 430 of the optoelectronic semiconductor wafer 440 is disposed in a corner region of the upper side 441 of the optoelectronic semiconductor wafer 440 that is not covered by the conversion element 450. The other electrical contact surface of the optoelectronic semiconductor wafer 440 is disposed on the lower side of the optoelectronic semiconductor wafer 440 that faces the upper side 441. Between the electrical contact surface 430 of the optoelectronic semiconductor wafer 440 and another contact surface, a voltage can be applied to the optoelectronic semiconductor wafer 440 to cause the optoelectronic semiconductor wafer 440 to emit electromagnetic radiation.

The housing 200 of the optoelectronic component 100 has a buried first leadframe section 500 and a buried second leadframe section 600. The first leadframe section 500 and the second leadframe section 600 each have an electrically conductive material (eg, metal). The first leadframe section 500 and the second leadframe section 600 are physically separated from each other but may be made of a common leadframe. The first leadframe section 500 and the second leadframe section 600 are embedded in the material of the housing 200 and are electrically isolated from one another.

The first leadframe section 500 has a wafer receiving surface 510 and a first solder contact surface 520 that faces the wafer receiving surface 510. The second leadframe section 600 has a joint surface 610 and a second weld contact surface 620 that faces the joint surface 610. At least a portion of the mating surface 610 of the wafer receiving surface 510 of the first leadframe section 500 and the second leadframe section 600 is not covered by the material of the housing 200. Wafer receiving surface 510 The joint surface 610 can be accessed on the bottom surface of the cavity 300 of the housing 200 and form portions of the bottom surface of the cavity 300 of the housing 200. The first weld contact surface 520 of the first leadframe section 500 and the second weld contact surface 620 of the second leadframe section 600 are also at least partially uncovered by the material of the housing 200. The first weld contact surface 520 and the second weld contact surface 620 can be accessed on a back surface of the housing 200 that faces the upper side 201.

The wafer receiving surface 510 of the first leadframe section 500 is disposed in a region of the bottom surface of the cavity 300, the region being disposed in the opening 110 of the cavity 300 in a direction 110 perpendicular to the upper side 201 of the housing 200. Below the portion of the geometric basic form 320. The joint surface 610 of the second leadframe section 600 is disposed in a portion of the bottom surface of the cavity 300 of the housing 200. The portion is disposed in the vertical direction 110 at a projection 330 of the open surface 310 of the cavity 300. Below.

The joint surface 610 of the second leadframe section 600 is disposed in a portion of the bottom surface of the cavity 300 and the portion is disposed in the vertical direction 110 below the protrusion 330 of the open surface 310 of the cavity 300, The bypass edge 311 of the open surface 310 of the cavity 300 can then narrowly follow the edge 411 of the optoelectronic semiconductor wafer configuration 400 from the upper side 410 of the optoelectronic semiconductor wafer configuration 400 in all of the remaining sections of the open surface 310. Outside shape. This ensures that there is a small distance 340 between the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 and the detour edge 311 of the open surface 310 of the cavity 300 on all sides of the optoelectronic semiconductor wafer configuration 400.

The optoelectronic semiconductor wafer arrangement 400 is disposed in the cavity 300 of the housing 200 of the optoelectronic component 100 such that the lower side of the optoelectronic semiconductor wafer 440 facing the upper side 441 faces the wafer receiving surface 510 of the first leadframe section 500 and is photovoltaic The other electrical contact surface of the semiconductor wafer 440 disposed on the underside of the optoelectronic semiconductor wafer 440 is electrically conductively coupled to the wafer receiving surface 510 of the first leadframe section 500. The optoelectronic semiconductor wafer 440 can be connected to the wafer receiving surface 510 of the first leadframe section 500, for example, by solder or a conductive adhesive.

The electrical contact surface 430 of the optoelectronic semiconductor wafer 440 disposed on the upper side 441 of the optoelectronic semiconductor wafer 440 is electrically conductively coupled to the bonding surface 610 of the second leadframe section 600 by a bonding wire 210. The bond wire 210 is preferably fully disposed within the cavity 300 of the housing 200. Thus, the bond wire 210 extends through a portion of the cavity 300 disposed below the geometric basic form 320 of the open surface 310 to a portion of the cavity 300 disposed below the projection 330 of the open surface 310 of the cavity 300.

The first solder contact surface 520 of the first leadframe section 500 and the second solder contact surface 620 of the second leadframe section 600 form an electrical termination surface of the optoelectronic component 100. The voltage can be applied to the optoelectronic semiconductor wafer 440 of the optoelectronic semiconductor wafer configuration 400 of the optoelectronic component 100 via the first solder contact surface 520 and the second solder contact surface 620. The optoelectronic component 100 can be electrically contacted, for example, according to a method of surface mounting. The optoelectronic component 100 thus forms a surface mount component (SMD). For example, the solder contact faces 520, 620 used to form the termination faces of the optoelectronic component 100 can be electrically contacted by reflow-welding.

A potting material 220 is disposed in the region of the cavity 300 of the housing 200 of the optoelectronic component 100 that surrounds the optoelectronic semiconductor wafer arrangement 400. The potting material 220 may, for example, have a enamel resin or an epoxide or a mixed material having a ruthenium resin or an epoxide. The potting material 220 can be optically transparent, particularly to allow electromagnetic radiation emitted by the optoelectronic semiconductor wafer arrangement 400 to pass therethrough. However, the potting material 220 can also have embedded optically scattering particles, such as scattering particles having TiO ₂ . The potting material 220 can also have embedded conversion particles that are formed to convert the wavelength of the electromagnetic radiation.

The cast particles 220 serve to protect the optoelectronic semiconductor wafer arrangement 400 and the bond wires 210 from damage caused by external mechanical action. Here, the bonding wire 210 is preferably completely buried in the potting material 220. The respective sides of the optoelectronic semiconductor wafer arrangement 400 that are perpendicular to the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 are preferably covered as completely as possible by the potting material 220. The potting material 220 can also serve as an optical reflector for the electromagnetic radiation emitted by the optoelectronic semiconductor wafer arrangement 400. The potting material 220 can also convert the wavelength of the electromagnetic radiation emitted by the optoelectronic semiconductor wafer arrangement 400.

The potting material 220 is preferably disposed in a flowable form in the region of the cavity 300 surrounding the optoelectronic semiconductor wafer arrangement 400 and subsequently hardened. Thus, a meniscus is formed on the surface of one of the opening surfaces 310 of the potting material 220 facing the cavity 300, in which the potting material 220 can be easily bent downward in the vertical direction 110. The form of the meniscus is essentially determined by the surface stress of the potting material 220. The sag produced by the potting material 220 in the region of the meniscus The larger the distance between the optoelectronic semiconductor wafer configuration 400 and the wall surface of the cavity 300, the greater the distance.

Since there is only a small distance 340 between the edge 411 of the upper side 410 of the optoelectronic semiconductor wafer arrangement 400 of the optoelectronic component 100 and the circumscribed edge 311 of the open surface 310 of the cavity 300, the potting material 220 is disposed around the optoelectronic semiconductor wafer. There is only a small meniscus on all sides of the 400, so that the potting material 220 is only bent in a small range. In the region of the projection 330, due to the small width 350 of the projection 330, only a small meniscus is formed with a small sag of the casting material 220.

Since the height of the optoelectronic semiconductor wafer arrangement 400 is substantially equal to the depth of the cavity 300, the potting material 220 can substantially completely cover the wall surface of the cavity 300 and the optoelectronic semiconductor wafer configuration 400 perpendicular to the upper side 410 of the optoelectronic semiconductor wafer configuration 400. Various sides. Thus, the cavity 300 is substantially completely filled by the potting material 220.

The walls of the cavity 300 and the sides of the optoelectronic semiconductor wafer arrangement 400 are completely covered, which may also be facilitated by the capillary effect of the potting material 220 acting on the potting material 220 as it is filled into the cavity 300, due to There is a small distance 340 between the optoelectronic semiconductor wafer arrangement 400 and the wall surface of the cavity 300 and a small width 350 of the protrusion 330 to allow the capillary effect to self-adjust.

Since the cavity 300 is substantially completely filled by the potting material 220 and the small dip of the potting material 220, it is ensured that the bonding wire 210 is completely covered by the potting material 220.

The invention has been described in detail in accordance with the preferred embodiments. However, the invention is not limited to the disclosed embodiments. Conversely, the expert of this line may derive other different embodiments therefrom without departing from the scope of the invention. .

100‧‧‧Optoelectronic components

200‧‧‧shell

201‧‧‧ upper side

210‧‧‧bonding line

220‧‧‧casting materials

300‧‧‧ cavity

310‧‧‧Open surface

311‧‧‧circle edge

320‧‧‧Geometric basic form

330‧‧‧ bumps

340‧‧‧ Distance (edge-wafer)

350‧‧‧Width (bump)

400‧‧‧Opto-Semiconductor Wafer Configuration

410‧‧‧ upper side

411‧‧‧ edge

420‧‧‧First geometric form

430‧‧‧Electrical contact surface

440‧‧‧Optoelectronic semiconductor wafer

441‧‧‧ upper side

450‧‧‧Transfer components

451‧‧‧ upper side

460‧‧‧Blank area

500‧‧‧First lead frame section

510‧‧‧ wafer receiving surface

600‧‧‧Second lead frame section

610‧‧‧ joint surface

Claims (14)

An optoelectronic component (100) having a housing (200) having a cavity (300) open toward an upper side (201) of the housing (200), the cavity (300) being in the housing (200) The upper side (201) has an open surface (310) having a geometric basic form (320) in which an optoelectronic semiconductor wafer configuration (400) is disposed, the upper side of the optoelectronic semiconductor wafer configuration (400) (410) having a first geometric form (420), which may be formed by extension of the first geometric form (420), the open surface (310) of the cavity (300) being relative to the The geometric basic form (320) further has a protrusion (330), and a bonding wire (210) is disposed on the electrical contact surface (430) of the optoelectronic semiconductor wafer arrangement (400) and the housing (200). Between the faces (610), the joint surface (610) is disposed in the projection (330). The optoelectronic component (100) of claim 1, wherein the first geometric form (420) of the upper side (410) of the optoelectronic semiconductor wafer configuration (400) is in the form of a rectangle. The optoelectronic component (100) of claim 1 or 2, wherein the open surface (310) of the cavity (300) has a wraparound edge (311), and the optoelectronic semiconductor wafer configuration (400) has an upper side (410) The shortest distance (340) between the edge (411) and the edge (311) of the open surface (310) of the cavity (300) is at the edge (411) of the upper side (410) of the optoelectronic semiconductor wafer configuration (400). The dots are between 30 microns and 600 microns, preferably between 100 microns and 300 microns. The optoelectronic component (100) of any one of claims 1 to 3, wherein a bypass edge of the upper surface (410) of the optoelectronic semiconductor wafer configuration (400) and the open surface (310) of the cavity (300) There is a height difference between (311) in a direction (110) perpendicular to the upper side (201) of the casing (200) of less than 60 microns. The optoelectronic component (100) of any one of claims 1 to 4, wherein the optoelectronic semiconductor wafer configuration (400) has an optoelectronic semiconductor wafer (440) having an upper side (441). The optoelectronic component (100) of claim 5, wherein the upper side (441) of the optoelectronic semiconductor wafer (440) forms a radiation emitting face. The optoelectronic component (100) of claim 5 or 6, wherein a conversion element (450) is disposed on an upper side (441) of the optoelectronic semiconductor wafer (440). The optoelectronic component (100) of any one of claims 1 to 7, wherein a potting material (220) is disposed in a region of the cavity (300) surrounding the optoelectronic semiconductor wafer configuration (400). The photovoltaic module (100) of claim 8, wherein the casting material (220) has an enamel resin and/or an epoxide. The optoelectronic component (100) of claim 8 or 9, wherein the potting material (220) has a luminescent material. The photovoltaic module (100) of any one of claims 8 to 10, wherein the potting material (220) has scattering particles. The optoelectronic component (100) of any one of claims 8 to 11, wherein the bond wire (210) is completely embedded in the potting material (220). A method for preparing a photovoltaic module (100) has the following steps: Preparing a housing having a cavity (300) that opens toward the upper side (201) of the housing (200), wherein the cavity (300) has an upper side (201) of the housing (200) An open surface (310) having a geometric basic form (320), the open surface (310) of the cavity (300) having a protrusion (330) relative to the geometric basic form (320); A semiconductor wafer arrangement (400) is disposed in the cavity (300), wherein the upper side (410) of the optoelectronic semiconductor wafer configuration (400) has a first geometric form (420), an open surface of the cavity (300) (310) The geometric basic form (320) can be formed by the extension of the first geometric form (420); and - a bonding wire (210) is disposed on the electrical contact surface of the optoelectronic semiconductor wafer configuration (400) (430) And the housing (200) is disposed between a joint surface (610) in the protrusion (330). The method of preparation of claim 13, wherein the method of preparation comprises the further step of: applying a potting material (220) in a region of the cavity (300) surrounding the optoelectronic semiconductor wafer (700).