TW201504001A - Stress-free electrochemical polishing nozzle - Google Patents
Stress-free electrochemical polishing nozzle Download PDFInfo
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- TW201504001A TW201504001A TW102127453A TW102127453A TW201504001A TW 201504001 A TW201504001 A TW 201504001A TW 102127453 A TW102127453 A TW 102127453A TW 102127453 A TW102127453 A TW 102127453A TW 201504001 A TW201504001 A TW 201504001A
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Abstract
Description
本發明關於半導體器件製造裝置，尤其關於一種無應力電化學抛光用噴嘴。 The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a nozzle for stress-free electrochemical polishing.
半導體器件被廣泛應用於電子等行業，半導體器件是在半導體晶圓上使用多個不同的處理步驟進行製造和生產，從而製造電晶體和互連元件。在形成互連元件的過程中，半導體晶圓可能經過例如多次掩膜、刻蝕、鍍銅和抛光等工藝處理。 Semiconductor devices are widely used in industries such as electronics, where semiconductor devices are fabricated and fabricated using a number of different processing steps to fabricate transistors and interconnect components. In the process of forming interconnect elements, the semiconductor wafer may be processed through processes such as multiple masking, etching, copper plating, and polishing.
目前，在抛光工藝中，多採用化學機械研磨(CMP)去除晶圓上多餘的銅膜。化學機械研磨裝置包括轉台、佈置於轉台上的研磨墊、夾持晶圓的研磨頭及研磨液供應管道。研磨時，一下壓力作用於研磨頭，從而使晶圓的待抛光面與研磨墊接觸，研磨頭帶動晶圓旋轉，晶圓的待抛光面與研磨墊之間有研磨液供應管道提供的研磨液，藉由使晶圓相對研磨墊旋轉，從而將晶圓上多餘的銅膜去除。然而，為了進一步縮小半導體器件的特徵尺寸，低K電介質材料或空氣隙應用於半導體器件中，低K電介質材料或空氣隙具有較弱的機械特性，化學機械研磨過程中作用於研磨頭的下壓力將會造成低K電介質材料的損壞，進而降低半導體器件的良率。 At present, in the polishing process, chemical mechanical polishing (CMP) is often used to remove excess copper film on the wafer. The chemical mechanical polishing apparatus includes a turntable, a polishing pad disposed on the turntable, a polishing head for holding the wafer, and a slurry supply pipe. During the grinding, the lower pressure acts on the polishing head, so that the surface to be polished of the wafer is in contact with the polishing pad, the polishing head drives the wafer to rotate, and the polishing liquid provided by the slurry supply pipe is between the surface to be polished of the wafer and the polishing pad. The excess copper film on the wafer is removed by rotating the wafer relative to the polishing pad. However, in order to further reduce the feature size of the semiconductor device, a low-k dielectric material or air gap is applied to the semiconductor device, the low-k dielectric material or the air gap has weak mechanical properties, and the downforce acting on the polishing head during the chemical mechanical polishing process This will cause damage to the low-k dielectric material, which in turn will reduce the yield of the semiconductor device.
為了解決化學機械研磨存在的技術弊端，無應力抛光技術作為新一代生產技術逐漸受到重視，無應力抛光技術基於電化學抛光原理能夠無機械應力的去除晶圓上多餘的銅膜，而不會對晶圓上的低K電介質層造成損害，從而提高了半導體器件的製造良率，攻克了製造具有微小特徵尺寸的半導體器件的技術瓶頸。無應力抛光裝置包括機械運動及控制裝置、電解液輸送裝置及電力供應及控制裝置。在無應力抛光工藝中，化學液作為電解液經由噴嘴噴射至晶圓的銅膜上，化學液與銅膜發生化學反應，從而將晶圓上多餘的銅膜無應力去除。 In order to solve the technical drawbacks of chemical mechanical polishing, stress-free polishing technology has gradually gained attention as a new generation production technology. The stress-free polishing technology can remove excess copper film on the wafer without mechanical stress based on the principle of electrochemical polishing. The low-k dielectric layer on the wafer causes damage, thereby improving the manufacturing yield of the semiconductor device, and overcomes the technical bottleneck of manufacturing a semiconductor device having a small feature size. The stress-free polishing device includes mechanical motion and control devices, electrolyte delivery devices, and power supply and control devices. In the stress-free polishing process, the chemical liquid is sprayed as an electrolyte onto the copper film of the wafer through the nozzle, and the chemical liquid chemically reacts with the copper film to remove the excess copper film on the wafer without stress.
普通的噴嘴在使用過程中存在一個較為嚴重的缺點，即當噴嘴作為電極用於抛光晶圓時，噴嘴中很容易產生氣泡，氣泡隨著電解液被噴射至晶圓上，導致晶圓表面抛光光潔度降低，且使晶圓表面產生缺陷，如圖6所示，圖6為採用普通噴嘴抛光晶圓後晶圓表面的局部放大圖，從圖6可以看出，無應力抛光後晶圓表面出現兩個凹穴，這兩個凹穴的出現是由於氣泡導致。參閱圖7，圖7中示出了一個較大的波峰和一個較大的波谷，較大的波峰代表晶圓上被氣泡覆蓋的區域，較大的波谷代表晶圓上具有凹穴的區域。在無應力抛光過程中，氣泡阻止電解液直接接觸晶圓表面，從而使得晶圓上被氣泡覆蓋的區域無法被抛光，與此同時，被氣泡覆蓋的區域處的電荷無法被消耗從而轉移至與氣泡覆蓋的區域相鄰的區域，導致該相鄰區域處被過度抛光，從而形成如圖6所示的凹穴，凹穴對 半導體器件的特性造成了不利影響。 Ordinary nozzles have a serious disadvantage in use. When the nozzle is used as an electrode for polishing a wafer, bubbles are easily generated in the nozzle, and the bubble is sprayed onto the wafer as the electrolyte is sprayed, resulting in polishing of the wafer surface. The finish is reduced and defects are generated on the surface of the wafer. As shown in Fig. 6, Fig. 6 is a partial enlarged view of the surface of the wafer after polishing the wafer with a common nozzle. As can be seen from Fig. 6, the surface of the wafer is unstressed after polishing. Two pockets, the appearance of which are caused by air bubbles. Referring to Figure 7, a larger peak and a larger valley are shown, with larger peaks representing areas of the wafer covered by bubbles and larger valleys representing areas with recesses on the wafer. During the stress-free polishing process, the bubbles prevent the electrolyte from directly contacting the surface of the wafer, so that the area covered by the bubbles on the wafer cannot be polished, and at the same time, the charge at the area covered by the bubbles cannot be consumed and transferred to The adjacent area of the area covered by the bubble causes the adjacent area to be over-polished, thereby forming a recess as shown in FIG. The characteristics of semiconductor devices have an adverse effect.
此外，使用普通噴嘴無法控制電解液在晶圓表面分佈的範圍和形狀，從而無法精確控制銅膜的去除速率和去除均勻性，也無法滿足抛光工藝的不同需求。 In addition, the use of ordinary nozzles can not control the range and shape of the electrolyte on the surface of the wafer, so that the removal rate and uniformity of the copper film cannot be precisely controlled, and the different requirements of the polishing process cannot be met.
本發明的目的是提供一種能夠提高晶圓表面抛光光潔度的無應力電化學抛光用噴嘴。 It is an object of the present invention to provide a nozzle for stress-free electrochemical polishing that can improve the polishing finish of a wafer surface.
為達成上述目的，本發明提出的無應力電化學抛光用噴嘴，包括：絕緣基座、導電主體及絕緣噴嘴頭。絕緣基座開設有貫穿絕緣基座的穿孔。導電主體作為陰極與電源連接以使電解液帶電荷，導電主體具有固定於絕緣基座的固定部，固定部向下延伸形成接收部，接收部插入絕緣基座的穿孔，接收部具有收容腔，收容腔貫穿接收部及與接收部相對應的固定部。絕緣噴嘴頭具有蓋板及貫穿蓋板的導管，蓋板固定於絕緣基座並位於導電主體的上方，導管具有主流體通道，導管收容於導電主體的收容腔並伸出於收容腔外，導管的外壁與接收部的內壁之間形成有輔助流體通道。 In order to achieve the above object, the nozzle for stress-free electrochemical polishing proposed by the present invention comprises: an insulating base, a conductive body and an insulating nozzle head. The insulating base is provided with a through hole penetrating through the insulating base. The conductive body is connected as a cathode to the power source to charge the electrolyte, the conductive body has a fixing portion fixed to the insulating base, the fixing portion extends downward to form a receiving portion, the receiving portion is inserted into the through hole of the insulating base, and the receiving portion has a receiving cavity. The receiving cavity passes through the receiving portion and the fixing portion corresponding to the receiving portion. The insulating nozzle head has a cover plate and a conduit extending through the cover plate. The cover plate is fixed on the insulating base and located above the conductive body. The conduit has a main fluid passage, and the conduit is received in the receiving cavity of the conductive body and protrudes outside the receiving cavity. An auxiliary fluid passage is formed between the outer wall and the inner wall of the receiving portion.
在一個實施例中，絕緣基座具有至少一個貫穿絕緣基座的連接孔，導電主體的固定部具有至少一個第二螺孔，至少一個導電螺絲插入導電主體的第二螺孔及絕緣基座的連接孔中，至少一個導電彈簧銷從絕緣基座的連接孔的底部插入連接孔中，導電彈簧銷的頂端與導電螺絲的底端連接，導電彈簧銷的底端與電源連接以向導電主體提 供電流。 In one embodiment, the insulating base has at least one connecting hole penetrating the insulating base, and the fixing portion of the conductive body has at least one second screw hole, and the at least one conductive screw is inserted into the second screw hole of the conductive body and the insulating base In the connecting hole, at least one conductive spring pin is inserted into the connecting hole from the bottom of the connecting hole of the insulating base, the top end of the conductive spring pin is connected with the bottom end of the conductive screw, and the bottom end of the conductive spring pin is connected with the power source to provide the conductive body Supply current.
在一個實施例中，無應力電化學抛光用噴嘴進一步包括至少一個絕緣密封圈，絕緣密封圈設置於絕緣基座的連接孔的底部。 In one embodiment, the nozzle for stress-free electrochemical polishing further includes at least one insulating sealing ring disposed at a bottom of the connecting hole of the insulating base.
在一個實施例中，無應力電化學抛光用噴嘴進一步包括至少一個絕緣保護套，絕緣保護套設置於絕緣基座的連接孔內，絕緣保護套包裹著導電彈簧銷。 In one embodiment, the stress-free electrochemical polishing nozzle further includes at least one insulating protective sleeve disposed in the connecting hole of the insulating base, and the insulating protective cover encloses the conductive spring pin.
在一個實施例中，絕緣基座包括基部，基部向上凸起形成容納部，所述穿孔及連接孔分別貫穿基部及容納部。 In one embodiment, the insulating base includes a base, the base portion is upwardly convex to form a receiving portion, and the through hole and the connecting hole respectively penetrate the base portion and the receiving portion.
在一個實施例中，容納部的頂表面設有數個中空的鎖扣部，數個中空的鎖扣部環繞穿孔佈置，導電主體的固定部開設有數個固定孔，中空的鎖扣部分別穿過固定孔以將導電主體固定安裝在絕緣基座上。 In one embodiment, the top surface of the receiving portion is provided with a plurality of hollow locking portions, a plurality of hollow locking portions are arranged around the perforations, and the fixing portion of the conductive body is provided with a plurality of fixing holes, and the hollow locking portions are respectively passed through A fixing hole is fixed to mount the conductive body on the insulating base.
在一個實施例中，絕緣噴嘴頭的蓋板開設有第一螺孔，絕緣螺絲插入絕緣噴嘴頭的第一螺孔及絕緣基座的中空的鎖扣部內以將絕緣噴嘴頭固定安裝於絕緣基座上。 In one embodiment, the cover of the insulating nozzle head is provided with a first screw hole, and the insulating screw is inserted into the first screw hole of the insulating nozzle head and the hollow locking portion of the insulating base to fix the insulating nozzle head to the insulating base. On the seat.
在一個實施例中，帶電荷的電解液由導管隔離成兩路支流，一路支流經由主流體通道後從導管的噴射口噴出至晶圓表面，另一路支流經由輔助流體通道後，在絕緣噴嘴頭的蓋板的阻擋下，該路支流不會被噴射至晶圓表面。 In one embodiment, the charged electrolyte is separated into two branches by a conduit, one branch is ejected from the nozzle of the conduit to the surface of the wafer via the main fluid passage, and the other branch is passed through the auxiliary fluid passage, at the tip of the insulating nozzle. Under the blockage of the cover, the branch is not sprayed onto the wafer surface.
在一個實施例中，絕緣噴嘴頭的導管的頂端口 定義為噴射口，電解液從該噴射口噴出至晶圓表面，導管的噴射口為圓形、三角形、方形、六邊形或八邊形。 In one embodiment, the top port of the conduit that insulates the nozzle tip Defined as the ejection port, the electrolyte is ejected from the ejection port to the surface of the wafer, and the ejection opening of the catheter is circular, triangular, square, hexagonal or octagonal.
在一個實施例中，絕緣噴嘴頭的材料為聚丙烯(PP)、聚乙烯(PE)或聚對苯二甲酸乙二酯(PET)。 In one embodiment, the material of the insulated nozzle tip is polypropylene (PP), polyethylene (PE) or polyethylene terephthalate (PET).
在一個實施例中，導電主體由導電性能良好的材料製成，該材料不被電解液腐蝕也不會與電解液發生化學反應。導電主體的材料為不銹鋼或鋁合金。 In one embodiment, the electrically conductive body is made of a material that is electrically conductive and that is not corroded by the electrolyte nor chemically reacts with the electrolyte. The material of the conductive body is stainless steel or aluminum alloy.
綜上所述，本發明藉由使絕緣噴嘴頭的導管伸出於導電主體的收容腔外，因此，導管能夠阻止附著在導電主體上的氣泡進入主流體通道，附著在導電主體上的氣泡隨著電解液經由輔助流體通道輸出並被絕緣噴嘴頭的蓋板阻擋，從而使得氣泡不會隨著電解液供應至晶圓表面，進而提高了晶圓表面抛光光潔度。 In summary, the present invention can prevent the air bubbles attached to the conductive body from entering the main fluid passage by extending the conduit of the insulating nozzle head out of the receiving cavity of the conductive body, and the air bubbles attached to the conductive body follow The electrolyte is output through the auxiliary fluid channel and blocked by the cover of the insulating nozzle head, so that bubbles are not supplied to the wafer surface with the electrolyte, thereby improving the polishing finish of the wafer surface.
10‧‧‧絕緣噴嘴頭 10‧‧‧Insulated nozzle head
11‧‧‧蓋板 11‧‧‧ Cover
12‧‧‧導管 12‧‧‧ catheter
13‧‧‧第一螺孔 13‧‧‧First screw hole
20‧‧‧導電主體 20‧‧‧Electrical subject
21‧‧‧固定部 21‧‧‧ Fixed Department
22‧‧‧接收部 22‧‧‧ Receiving Department
23‧‧‧固定孔 23‧‧‧Fixed holes
24‧‧‧第二螺孔 24‧‧‧Second screw hole
30‧‧‧絕緣基座 30‧‧‧Insulated base
31‧‧‧基部 31‧‧‧ base
32‧‧‧容納部 32‧‧‧ accommodating department
40‧‧‧導電螺絲 40‧‧‧Electrical screws
50‧‧‧O型密封圈 50‧‧‧O-ring
60‧‧‧絕緣螺絲 60‧‧‧Insulated screws
70‧‧‧導電彈簧銷 70‧‧‧conductive spring pin
71‧‧‧絕緣保護套 71‧‧‧Insulation sleeve
121‧‧‧主流體通道 121‧‧‧Main fluid channel
221‧‧‧收容腔 221‧‧‧ containment chamber
311‧‧‧定位部 311‧‧‧ Positioning Department
312‧‧‧第三螺孔 312‧‧‧ Third screw hole
321‧‧‧鎖扣部 321‧‧‧Locking Department
323‧‧‧連接孔 323‧‧‧connection hole
322‧‧‧穿孔 322‧‧‧Perforation
圖1揭示了根據本發明一實施例的噴嘴的立體圖。 Figure 1 discloses a perspective view of a nozzle in accordance with an embodiment of the present invention.
圖2揭示了根據本發明一實施例的噴嘴的爆炸圖。 Figure 2 discloses an exploded view of a nozzle in accordance with an embodiment of the present invention.
圖3揭示了根據本發明一實施例的噴嘴的前視圖。 Figure 3 discloses a front view of a nozzle in accordance with an embodiment of the present invention.
圖4揭示了根據本發明一實施例的噴嘴的底視圖。 Figure 4 discloses a bottom view of a nozzle in accordance with an embodiment of the present invention.
圖5揭示了根據本發明一實施例的噴嘴的剖視圖。 Figure 5 discloses a cross-sectional view of a nozzle in accordance with an embodiment of the present invention.
圖6是使用普通噴嘴抛光晶圓後晶圓表面的局部放大圖。 Figure 6 is a partial enlarged view of the wafer surface after polishing the wafer using a conventional nozzle.
圖7是採用輪廓測定法測得的晶圓表面的曲線圖。 Figure 7 is a graph of wafer surface measured by profilometry.
為詳細說明本發明的技術內容、構造特徵、所達成目的及功效，下面將結合實施例並配合圖式予以詳細說明。 In order to explain the technical content, structural features, objects and effects of the present invention in detail, the embodiments will be described in detail below with reference to the accompanying drawings.
參閱圖1，揭示了根據本發明一實施例的噴嘴的立體圖。該噴嘴包括大致呈蘑菇狀的絕緣噴嘴頭10、導電主體20及絕緣基座30。絕緣基座30安裝於抛光腔室的底板上(圖中未示)，絕緣基座30支撐絕緣噴嘴頭10及導電主體20，導電主體20位於絕緣噴嘴頭10及絕緣基座30之間。下面將對絕緣噴嘴頭10、導電主體20及絕緣基座30進行詳細說明。 Referring to Figure 1, a perspective view of a nozzle in accordance with an embodiment of the present invention is disclosed. The nozzle includes an insulated nozzle tip 10 that is generally mushroom shaped, a conductive body 20, and an insulating base 30. The insulating base 30 is mounted on a bottom plate of the polishing chamber (not shown). The insulating base 30 supports the insulating nozzle head 10 and the conductive body 20. The conductive body 20 is located between the insulating nozzle head 10 and the insulating base 30. The insulating nozzle head 10, the conductive body 20, and the insulating base 30 will be described in detail below.
參閱圖1至圖4，絕緣噴嘴頭10由例如聚丙烯(PP)、聚乙烯(PE)或聚對苯二甲酸乙二酯(PET)材料製成。絕緣噴嘴頭10包括圓盤狀的蓋板11及貫穿蓋板11中心及整個噴嘴的導管12。導管12的頂端口定義為噴射口，電解液從該噴射口噴出至晶圓表面。導管12的噴射口為圓形，根據抛光工藝的不同需求，導管12的噴射口除了設計為圓形外，還可以設計成例如三角形、方形、六邊形或八邊形等。導管12具有主流體通道121。三個第一螺孔13開設於絕緣噴嘴頭10的蓋板11上。 Referring to Figures 1 through 4, the insulated nozzle tip 10 is made of, for example, polypropylene (PP), polyethylene (PE) or polyethylene terephthalate (PET) materials. The insulating nozzle head 10 includes a disk-shaped cover plate 11 and a conduit 12 that extends through the center of the cover plate 11 and the entire nozzle. The top port of the conduit 12 is defined as an injection port from which the electrolyte is ejected to the surface of the wafer. The injection port of the duct 12 is circular. According to different requirements of the polishing process, the injection port of the duct 12 can be designed, for example, as a circle, a triangle, a square, a hexagon or an octagon. The conduit 12 has a primary fluid passage 121. The three first screw holes 13 are formed in the cover 11 of the insulating nozzle head 10.
導電主體20由導電性能良好的材料製成，該材料能夠不被電解液腐蝕也不會與電解液發生化學反應，該材料可以是例如不銹鋼或鋁合金等。導電主體20具有固定部21，固定部21的中部向下延伸形成圓柱形的接收部22，接收部22具有收容腔221，該收容腔221貫穿接收部 22及與接收部22相對應的固定部21。三個固定孔23及兩個第二螺孔24分別對稱開設於固定部21上。 The conductive body 20 is made of a material having good electrical conductivity, which is capable of not being corroded by the electrolyte or chemically reacting with the electrolyte, and the material may be, for example, stainless steel or aluminum alloy. The conductive body 20 has a fixing portion 21, and a central portion of the fixing portion 21 extends downward to form a cylindrical receiving portion 22, and the receiving portion 22 has a receiving cavity 221, and the receiving cavity 221 extends through the receiving portion. 22 and a fixing portion 21 corresponding to the receiving portion 22. The three fixing holes 23 and the two second screw holes 24 are symmetrically opened on the fixing portion 21, respectively.
絕緣基座30包括基部31，基部31相對的兩側牆分別向外延伸形成一對定位部311，每個定位部311均設有三個第三螺孔312。基部31的中部向上凸起形成圓柱形容納部32。容納部32的頂表面設有三個中空的鎖扣部321。兩個連接孔322設於容納部32並貫穿容納部32及基部31。容納部32的中心開設有穿孔323，穿孔323貫穿容納部32及基部31。三個中空的鎖扣部321及兩個連接孔322環繞穿孔323佈置。 The insulating base 30 includes a base portion 31. The opposite side walls of the base portion 31 respectively extend outward to form a pair of positioning portions 311, and each of the positioning portions 311 is provided with three third screw holes 312. The central portion of the base portion 31 is convex upward to form a cylindrical receiving portion 32. The top surface of the receiving portion 32 is provided with three hollow locking portions 321 . Two connecting holes 322 are provided in the receiving portion 32 and penetrate through the receiving portion 32 and the base portion 31. A through hole 323 is defined in the center of the receiving portion 32 , and the through hole 323 extends through the receiving portion 32 and the base portion 31 . Three hollow locking portions 321 and two connecting holes 322 are arranged around the through holes 323.
參閱圖1至圖5，裝配時，導電主體20的接收部22插入絕緣基座30的穿孔323，導電主體20的固定部21置於絕緣基座30的容納部32的頂表面，中空的鎖扣部321分別穿過固定孔23以將導電主體20固定安裝在絕緣基座30上。絕緣噴嘴頭10的導管12收容於導電主體20的收容腔221並伸出於收容腔221外。接收部22的內壁與導管12的外壁之間形成有輔助流體通道。三個絕緣螺絲60分別插入絕緣噴嘴頭10的第一螺孔13及絕緣基座30的中空的鎖扣部321內以將絕緣噴嘴頭10固定安裝於絕緣基座30上。兩個導電螺絲40分別插入導電主體20的第二螺孔24及絕緣基座30的連接孔322中。兩個導電彈簧銷70分別從連接孔322的底部插入連接孔322中。兩個絕緣保護套71設置于連接孔322內，保護套71包裹著導電彈簧銷70，導電彈簧銷70的頂端與導電螺絲40的底端連接，導電彈 簧銷70的底端插入抛光腔室的底板並與外部電源線連接以向導電主體20提供電流。兩個絕緣的O型密封圈50設置于連接孔322的底部並位於絕緣基座30與抛光腔室的底板之間，以防止電解液滲入連接孔322從而避免對導電彈簧銷70及電源線造成侵蝕。六個螺絲分別插入絕緣基座30的第三螺孔312內，進而將絕緣基座30安裝在抛光腔室的底板上，該六個螺絲由抗腐蝕性材料製成，因而不會被電解液腐蝕。 Referring to FIGS. 1 to 5, when assembled, the receiving portion 22 of the conductive body 20 is inserted into the through hole 323 of the insulating base 30, and the fixing portion 21 of the conductive body 20 is placed on the top surface of the receiving portion 32 of the insulating base 30, the hollow lock The fastening portion 321 passes through the fixing hole 23, respectively, to fix the conductive body 20 on the insulating base 30. The conduit 12 of the insulating nozzle head 10 is received in the receiving cavity 221 of the conductive body 20 and protrudes outside the receiving cavity 221. An auxiliary fluid passage is formed between the inner wall of the receiving portion 22 and the outer wall of the duct 12. Three insulating screws 60 are inserted into the first screw holes 13 of the insulating nozzle head 10 and the hollow latch portions 321 of the insulating base 30 to fix the insulating nozzle head 10 to the insulating base 30. The two conductive screws 40 are respectively inserted into the second screw holes 24 of the conductive body 20 and the connection holes 322 of the insulating base 30. Two conductive spring pins 70 are inserted into the connection holes 322 from the bottom of the connection hole 322, respectively. Two insulating sleeves 71 are disposed in the connecting holes 322. The protective sleeve 71 encloses the conductive spring pins 70. The top ends of the conductive spring pins 70 are connected to the bottom ends of the conductive screws 40. The bottom end of the spring pin 70 is inserted into the bottom plate of the polishing chamber and is connected to an external power line to supply current to the conductive body 20. Two insulated O-rings 50 are disposed at the bottom of the connecting hole 322 and between the insulating base 30 and the bottom plate of the polishing chamber to prevent electrolyte from penetrating into the connecting hole 322 to avoid causing the conductive spring pin 70 and the power line erosion. Six screws are respectively inserted into the third screw holes 312 of the insulating base 30, and the insulating base 30 is mounted on the bottom plate of the polishing chamber. The six screws are made of a corrosion-resistant material, so that they are not affected by the electrolyte. corrosion.
在無應力抛光工藝中，晶圓上待抛光去除的金屬層，通常為銅層或銅合金層，作為陽極並位於噴嘴的上方，導電主體20作為陰極。電流經由電源線、導電彈簧銷70及導電螺絲40供應至導電主體20。作為電解液的化學液體輸送至噴嘴後經由導電主體20使化學液體帶電荷。帶電荷的電解液由導管12隔離成兩路支流，一路支流經由主流體通道121後從導管12的噴射口噴出至晶圓表面，電解液與晶圓表面的金屬層反應，從而將晶圓表面的金屬層無應力去除。另一路支流經由輔助流體通道後，在絕緣噴嘴頭10的蓋板11的阻擋下，該路支流不會被噴射至晶圓表面。 In the stress-free polishing process, the metal layer to be polished and removed on the wafer is usually a copper layer or a copper alloy layer, which is located as an anode and above the nozzle, and the conductive body 20 serves as a cathode. Current is supplied to the conductive body 20 via the power line, the conductive spring pin 70, and the conductive screw 40. The chemical liquid as the electrolyte is transported to the nozzle to charge the chemical liquid via the conductive body 20. The charged electrolyte is separated into two branches by the conduit 12, and a branch is discharged from the injection port of the conduit 12 to the surface of the wafer through the main fluid passage 121, and the electrolyte reacts with the metal layer on the surface of the wafer to thereby surface the wafer. The metal layer is free of stress removal. After the other branch is passed through the auxiliary fluid passage, the branch is not sprayed onto the wafer surface under the blockage of the cover 11 of the insulating nozzle head 10.
通常，無應力抛光過程中，氣泡很容易產生並附著在電極上。本發明中，導管12伸出於導電主體20的收容腔221外，因此，導管12能夠阻止附著在導電主體20上的氣泡進入主流體通道121。附著在導電主體20上的氣泡隨著電解液經由輔助流體通道輸出並被絕緣噴嘴頭10的 蓋板11阻擋，從而使得氣泡不會隨著電解液供應至晶圓表面，進而提高了晶圓表面抛光光潔度，此外，由於導管12的噴射口可以根據抛光工藝的不同需求設計成不同形狀，如圓形、三角形、方形、六邊形或八邊形等，電解液在晶圓表面分佈的範圍和形狀能夠得到精確的控制，因而，金屬層的去除速率和去除均勻性可以被控制的很好。 Generally, during the stress-free polishing process, bubbles are easily generated and adhered to the electrodes. In the present invention, the duct 12 protrudes outside the receiving cavity 221 of the conductive body 20, and therefore, the duct 12 can prevent air bubbles adhering to the conductive body 20 from entering the main fluid passage 121. The air bubbles attached to the conductive body 20 are output with the electrolyte through the auxiliary fluid passage and are insulated by the nozzle head 10 The cover 11 is blocked, so that the bubbles are not supplied to the surface of the wafer with the electrolyte, thereby improving the polishing finish of the wafer surface. In addition, since the ejection openings of the catheter 12 can be designed into different shapes according to different requirements of the polishing process, such as Circular, triangular, square, hexagonal or octagonal, etc., the range and shape of the electrolyte distribution on the surface of the wafer can be precisely controlled, so the removal rate and removal uniformity of the metal layer can be well controlled. .
綜上所述，本發明透過上述實施方式及相關圖式說明，己具體、詳實的揭露了相關技術，使本領域的技術人員可以據以實施。而以上所述實施例只是用來說明本發明，而不是用來限制本發明的，本發明的權利範圍，應由本發明的申請專利範圍來界定。至於本文中所述元件數目的改變或等效元件的代替等仍都應屬於本發明的權利範圍。 In view of the above, the present invention has been specifically and specifically disclosed by the above-described embodiments and related drawings, and can be implemented by those skilled in the art. The above-mentioned embodiments are only intended to illustrate the invention, and are not intended to limit the invention. The scope of the invention should be defined by the scope of the invention. Changes in the number of elements described herein or substitution of equivalent elements are still within the scope of the invention.
10‧‧‧絕緣噴嘴頭 10‧‧‧Insulated nozzle head
11‧‧‧蓋板 11‧‧‧ Cover
12‧‧‧導管 12‧‧‧ catheter
13‧‧‧第一螺孔 13‧‧‧First screw hole
20‧‧‧導電主體 20‧‧‧Electrical subject
21‧‧‧固定部 21‧‧‧ Fixed Department
22‧‧‧接收部 22‧‧‧ Receiving Department
23‧‧‧固定孔 23‧‧‧Fixed holes
24‧‧‧第二螺孔 24‧‧‧Second screw hole
30‧‧‧絕緣基座 30‧‧‧Insulated base
31‧‧‧基部 31‧‧‧ base
32‧‧‧容納部 32‧‧‧ accommodating department
40‧‧‧導電螺絲 40‧‧‧Electrical screws
50‧‧‧O型密封圈 50‧‧‧O-ring
60‧‧‧絕緣螺絲 60‧‧‧Insulated screws
311‧‧‧定位部 311‧‧‧ Positioning Department
312‧‧‧第三螺孔 312‧‧‧ Third screw hole
321‧‧‧鎖扣部 321‧‧‧Locking Department
322‧‧‧連接孔 322‧‧‧connection hole
323‧‧‧穿孔 323‧‧‧Perforation
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| TW102127453A TWI639488B (en) | 2013-07-31 | 2013-07-31 | No-stress electrochemical polishing nozzle |
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| TWI639488B TWI639488B (en) | 2018-11-01 |
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| WO2006110864A2 (en) * | 2005-04-12 | 2006-10-19 | Acm Research, Inc. | Method for improving surface roughness during electro-polishing |
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