TW201447474A - Method of correcting direction and position of beam patterning - Google Patents

Abstract

Provided is a method of correcting the direction and position of beam patterning including: loading a substrate into a process chamber; creating a virtual non-deformed substrate model based on non-deformed substrate shape information representing the shape of a non-deformed substrate that is a pre-deformation substrate; checking the deformation level of the substrate loaded into the process chamber and creating a virtual deformed substrate model; calculating a patterning sector start point that is the central point of a patterning sector start side and a patterning sector end point that is the central point of a patterning sector end side, wherein the patterning of a beam is performed on each sector of the deformed substrate model by using the non-deformed substrate shape information; and determining a patterning start substrate position of each sector in consideration of a slope between the patterning sector start point and the patterning sector end point.

Description

Method of correcting the direction and position of beam patterning

The present invention relates to a method of correcting the direction and position of beam patterning, and more particularly to a correcting beam when a substrate is deformed during the process of patterning a particular pattern on a substrate by beam patterning. The method of patterning the direction and position.

Ink jet and beam radiation techniques are used to create a specific pattern on a substrate.

The technique is widely used because the beam patterning technique can make a specific pattern on the intended portion of the substrate by beam radiation and has the advantage of being able to apply to a larger area accurately and quickly.

A general laser patterning apparatus includes: a processing chamber; a substrate transfer unit installed in the processing chamber, supporting the substrate and horizontally moving the substrate in a direction in which the process is performed; and being mounted on an upper portion of the processing chamber A module that partially and emits a beam of light. A beam of light from a beam module in the processing chamber can be radiated to a substrate loaded into a processing chamber of the laser patterning device to perform a patterning process on a desired portion of the substrate.

However, the substrate may be deformed due to heat or external physical force before performing the patterning process, and when patterning processing is performed on such a deformed substrate, there is a limitation that patterning cannot be accurately performed.

That is, when patterning by beam radiation in the patterning device, the radiation of the beam can be normally performed on each segment, provided that the loaded substrate is a substrate 1 having a normal shape without deformation, such as This is shown in Figure 1A. However, when the substrate has been deformed while performing the previous processing, there is a limitation that the light beam cannot be properly radiated onto the deformed substrate, as shown in FIG. 1B. Since the vertical contraction/expansion of the deformed substrate 1' is generally considered and the directivity of the radiation (patterning) of the light beam is not considered, patterning at a precise position cannot be performed.

(Patent Document 1) Korean Patent Publication No. 2012-0131338.

In order to solve the above limitation, when the patterning process is performed on the substrate, the patterning direction and the patterning position of the light beam are corrected for precise radiation. Also, even if the shape of the substrate is deformed due to expansion or contraction, the radiation of the light beam can be correctly performed. Also, even if the shape of the substrate changes, the radiation direction of the light beam does not go wrong.

According to an exemplary embodiment, a method of correcting a direction and a position of a beam patterning includes: loading a substrate into a processing chamber; based on non-deformed substrate shape information indicating a shape of a non-deformed substrate as a pre-deformed substrate Creating a virtual non-deformed substrate model; inspecting a level of deformation of the substrate loaded into the processing chamber and creating a virtual deformed substrate model; calculating a patterned segment starting point as a center point of the starting side of the patterned segment and End of the patterned segment as the center point on the end side of the patterned segment a point in which patterning of a light beam is performed on each segment of the deformed substrate model by using non-deformed substrate shape information; and considering a slope between a patterned segment start point and a patterned segment end point, The patterned starting substrate position for each segment is determined.

The non-deformed substrate shape information may be information about the shape of the base substrate prior to application of heat or external physical force.

The non-deformed substrate shape information may include the position and length of each side of the non-deformed substrate, the patterning start side, the patterning end side, the alignment mark coordinates of the non-deformed substrate, and the number of beam patterning sections. at least one.

The creation of the non-deformed substrate model may include: inspecting non-deformed substrate shape information; creating a virtual non-deformed substrate model having a length of each side of the non-deformed substrate shape information; alignment marks based on non-deformed substrate shape information The coordinates place a non-deformed alignment mark as an alignment mark on the non-deformed substrate model.

The creation of the deformed substrate model may include: reading a deformation alignment mark as an alignment mark formed on a substrate loaded into the processing chamber; measuring a mark deformation level, that is, between the non-deformed alignment mark and the deformation alignment mark a deformation level; and a deformed substrate model having a patterned deformation start side and a patterned deformation end side from the non-deformed substrate model, the patterned deformation start side and the patterned deformation end side being by the mark deformation level The expansion or contraction patterning starts from the patterning start side and the patterning end is completed on the patterning end side.

The calculation of the starting point of the patterned segment may include dividing the entire length of the starting side of the patterned deformation into portions corresponding to the number of beam patterned segments and calculating the position of the starting side of each patterned segment; Each center point on the starting side of the patterned segment is calculated as the starting point of the patterned segment.

The determining of the patterned starting substrate position of each segment may include: calculating a tilt angle connecting the patterned segment start point and the patterned segment end point; rotating the substrate platform at the tilt angle to allow the substrate to be parallel Moving in the direction of the patterning direction of the non-deformed substrate model; and moving the coordinate value by the level of change of the starting point of the patterned segment according to the rotation and the level of change of the end point of the patterned segment, and determining each segment The last patterned starting substrate position and the patterned end substrate position.

Rotating the substrate platform at an angle of inclination may include rotating the substrate platform at an oblique angle from a center point of the platform supporting the substrate.

The patterned segment start point and the patterned segment end point may be calculated on each segment on which the patterning of the beam is performed, and the substrate may be moved to when the beam of each segment is patterned The patterned starting substrate position of each segment.

1, 1 '‧‧‧ substrate

100‧‧‧Processing chamber

110‧‧‧Substrate transfer unit

200‧‧‧beam module

B1, B2, B3, B4‧‧‧ pattern starting point

Cam1, cam2, cam3, cam4‧‧ vision cameras

Dy1, dy2, dy3, dy4‧‧‧ deformation level

D1‧‧‧right length

D2‧‧‧left length

D3‧‧‧Upper length

D4‧‧‧Lower length

E1, E2, E3, E4‧‧‧ patterning section end point

I‧‧‧First quadrant

II‧‧‧Second quadrant

III‧‧‧ third quadrant

IV‧‧‧fourth quadrant

L1‧‧‧ oblique line / first patterned directionality

L2‧‧‧Second patterned directionality

L3‧‧‧ Third patterned directionality

M1, M2, M3, M4‧‧‧ alignment marks

S‧‧‧ substrate

S1, S2, S3, S4‧‧ Section

S1', S2', S3', S4'‧‧‧ starting side of the patterned segment

S310, S320, S330, S340, S350‧‧‧ Process

Xa, Yb‧‧‧ patterned segment starting point coordinates

Xa', Yb'‧‧‧ rotation starting point coordinates

X1, y1‧‧‧ first alignment mark coordinate value

X2, y2‧‧‧ second alignment mark coordinate value

X3, y3‧‧‧ third alignment mark coordinate value

X4, y4‧‧‧ fourth alignment mark coordinate value

Θ‧‧‧ inclination

The exemplary embodiments can be understood in more detail by the following description in conjunction with the drawings.

1A and 1B show the beam patterning direction on a substrate without deformation and a deformed substrate.

2 illustrates a substrate processing apparatus that corrects patterned features and performs beam patterning in accordance with one embodiment of the present invention.

3 is a flow diagram of a process for correcting a patterning direction and a patterned position of a laser beam, in accordance with an embodiment of the present invention.

Figure 4 shows how the patterned segments, alignment marks, and length of each side are measured on a non-deformed substrate.

Figure 5 illustrates a non-deformed substrate model in accordance with one embodiment of the present invention.

Figure 6 illustrates the level of deformation of alignment marks on a deformed substrate in accordance with one embodiment of the present invention.

Figure 7 illustrates a deformed substrate model in accordance with one embodiment of the present invention.

Figure 8 illustrates a non-deformed substrate model and a deformed substrate model in accordance with one embodiment of the present invention.

Figure 9 illustrates how the tilt angle is calculated in accordance with one embodiment of the present invention.

Figures 10A and 10B illustrate how the platform can be moved by tilt in accordance with one embodiment of the present invention.

Figures 11A, 11B, and 11C illustrate how the direction of travel of the substrate varies depending on each patterned segment, in accordance with one embodiment of the present invention.

Exemplary embodiments of the present invention will be described in more detail hereinafter with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the various embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. The same reference numerals in the drawings denote the same components.

2 illustrates a substrate processing apparatus that corrects patterned features and performs patterning in accordance with one embodiment of the present invention.

A substrate processing apparatus that performs beam patterning scans a light beam on a substrate and performs a patterning process on the substrate S. The substrate processing apparatus includes: a processing chamber 100; a substrate transfer unit 110 installed in the processing chamber 100, supporting the substrate S, and moving the substrate S horizontally forward and backward; and being mounted in the processing chamber One of the rooms 100 A beam module 200 that side and emits a beam of light, the beam module facing the substrate transfer unit 110.

The substrate transfer unit 110 may include a substrate platform on which the substrate is placed, and allows beam patterning to be sequentially performed on the surface of the substrate as the substrate platform moves. Since the platform also has a rotatable configuration in addition to moving in the X and Y directions, it can be rotated.

Also, a vision camera (not shown) having a charge coupled device (CCD) sensor is disposed in the processing chamber. The vision camera (not shown) can capture the substrate and identify the location of the alignment marks formed on the substrate.

And, a control unit (not shown) checks the deformation level of the substrate loaded into the chamber, corrects the beam patterning range, moves the substrate according to the correction value, and performs beam irradiation.

A process of patterning a substrate by using a substrate processing apparatus having such a configuration will be briefly described below. First, when the substrate S is loaded into the processing chamber 100 and placed on the substrate transfer unit 110, the substrate transfer unit 110 is transferred by using a vision camera (not shown) to match the alignment marks to align the substrates. S. When the substrate alignment is completed, the laser beam is radiated onto the substrate S. The laser beam is radiated onto the substrate as the substrate is moved horizontally forward and backward by the substrate transfer unit 110.

When the laser beam is irradiated, the laser beam is only radiated to the patterned target area to perform selective patterning. For example, by performing a trigger on the beam that is capable of controlling beam oscillation, it is possible to radiate only the laser beam to the patterned target area of the substrate moving beneath the beam module. That is, the beam module simply has a ready state to receive power and is ready to perform laser oscillations. Control unit can touch Signaling is sent to the beam module to perform selective radiation when the patterned target area of the substrate is placed on the beam path of the beam module. It is possible to perform patterning by other techniques.

And, when the substrate loaded into the processing chamber has a deformed shape due to, for example, heat or external physical force, etc., the preset patterning start range and the preset patterning end range do not accurately match the deformed substrate And thus the patterning is performed in an unintended direction. Accordingly, the present invention describes in detail how such a substrate deformation level is considered and the patterning direction is corrected by referring to the control unit of FIG.

3 is a flow chart of a process of correcting a patterning direction and a patterned position of a laser beam, in accordance with one embodiment of the present invention.

Hereinafter, the substrate has four patterned segments, and one example of how the radiation of the light beam is performed on each of the patterned segments will be described. That is, as the substrate moves and its first section is placed under the fixed beam module, the beam of radiation is radiated and the substrate reciprocates to perform patterning on the first segment, and then in the second segment, Patterning is performed on the third and fourth sections. In addition to the four patterned segments to be described below, embodiments of the present invention will also be applicable to substrates having a single patterned segment or multiple patterned segments.

First, the patterned target substrate is loaded into the processing chamber in process S310. Since the patterned target substrate is fabricated with heat or external physical force in a previous process, it may have a deformed shape different from the original substrate.

When the patterned target substrate is loaded into the processing chamber, in process S320, the control unit creates a virtual non-deformed substrate model based on information about the shape of the non-deformed substrate, the information representation being a patterned target substrate The shape of the non-deformed substrate of the substrate before deformation. In order to create a non-deformed substrate model, when the target is to be patterned When the substrate is placed in the processing chamber, the control unit first checks information about the substrate before deformation of the patterned target substrate (referred to as "non-deformed substrate shape information"). Non-deformed substrate shape information is information about the shape of the substrate before it is affected by heat or external physical forces or before deformation occurs. The shape information of the pre-deformed substrate regarding the pre-deformed substrate loaded into the patterned processing substrate may be received from a previous processing device according to a database (database) that stores such non-deformed substrate shape information in advance. Check the processing chamber.

The non-deformed substrate shape information includes information on the position and length of each side of the non-deformed substrate, the patterning start side, the patterning end side, the alignment mark coordinates of the non-deformed substrate, and the number of beam patterning sections. At least one piece of information. As shown in FIG. 4, the position of each side of the non-deformed substrate is the position coordinate of each side, and the length of each side includes the right side length d1, the left side length d2, the upper side length d3, and the lower side of the non-deformed substrate. Side length d4. And, the patterning start side is the side from which the beam patterning starts, and the patterning end side is the side where the patterning ends after the patterning is completed. For example, when patterning is performed in FIG. 4 while the substrate is horizontally moved from the right side to the left side, the right side d1 becomes the patterning start side and the left side d2 becomes the patterning end side. And, the non-deformed substrate shape information includes a plurality of alignment mark coordinates formed on the non-deformed substrate. For example, when the substrate is divided into four quadrants each including an alignment mark, the first alignment mark M1 placed on the first quadrant has the first alignment mark coordinate values x1, y1 as non-deformed substrate shape information. . And, the number of beam patterning sections represents the number of sections when the substrate is divided into sections to radiate the light beam and patterning is performed. For example, as shown in FIG. 4, when the substrate is divided into four segments S1 to S4 and beam radiation is sequentially performed, the number of beam patterning segments is four.

After examining the non-deformed substrate shape information, the control unit creates a non-deformed substrate model as shown in FIG. A non-deformed substrate model is created, which is a virtual substrate model having the same dimensions as the length of each side obtained from the non-deformed substrate shape information. Further, based on the alignment mark coordinates of the non-deformed substrate shape information, an alignment mark (hereinafter, referred to as a "non-deformation alignment mark") is placed on the non-deformed substrate model. Therefore, by using the non-deformed substrate shape information of the substrate before actual deformation, the control unit creates a virtual substrate model having the same shape as that shown in FIG.

After the non-deformed substrate model is created, the level of deformation of the patterned target substrate loaded into the processing chamber is examined to create a virtual deformed substrate model in process S320 (of FIG. 3).

Each alignment mark made on a patterned target substrate loaded into a processing chamber is captured by using a vision camera having a CCD sensor, and an alignment mark is read from the captured image (hereinafter, Called "deformation alignment mark"). The coordinates of the deformation alignment marks read in this way are compared with the non-deformation alignment marks formed on the non-deformed substrate model to measure the level of deformation between the alignment marks. For reference, since the coordinates of the alignment mark are obtained from the non-deformed substrate shape information, the visual camera captures the point at which the alignment mark is placed. The number of visual cameras can be the same as the number of alignment marks.

If the substrate expands or contracts due to heat or external physical forces after the previous processing device performs the process, a deformation will occur between the alignment marks.

Figure 6 is an enlarged view of an image obtained by capturing an alignment mark of a patterned target substrate with a visual camera. Since the vision camera obtains the coordinates from which the alignment marks (non-deformed alignment marks) will be placed from the non-deformed substrate shape information, The camera is placed and captured so that the center point of the non-deformed alignment mark engraved in the substrate before the substrate is deformed is placed at the center of the image. However, when the patterned target substrate has a deformed shape due to heat or external physical force, the position of the alignment mark also changes. For example, as shown in FIG. 6, when the first quadrant of the substrate is expanded and deformed upward, the first alignment mark M1 fabricated on the first quadrant is also placed on the upwardly moving portion. The first alignment mark (the deformed first alignment mark) engraved in the patterned target substrate is not placed at the center of the image taken by the first vision camera cam1, but has a position to move upward. Therefore, it is possible to measure the vertical distance dy1 between the center point of the image captured by the first vision camera cam1 (the center point of the non-deformed first alignment mark) and the center point of the deformed first alignment mark as the mark deformation Level. For reference, depending on the length direction of the beam, the level of mark deformation can be subject to different measurements. When it is assumed that the radiation of the light beam is performed by using the vertical axis of the substrate as the length direction, the vertical distance between the non-deformed alignment mark and the deformation alignment mark can be measured as the mark deformation level, and conversely, when the level of the substrate is assumed to be adopted When the axis radiates as a beam in the longitudinal direction, the horizontal distance between the non-deformed alignment mark and the deformation alignment mark can be measured as the mark deformation level.

After measuring the mark deformation level of the alignment mark made on each quadrant of the patterned target substrate, the deformed substrate model is created based on the mark deformation level in the process S330 (of FIG. 3). A deformed substrate model is created from a non-deformed substrate model having a patterning start side starting from expansion or contraction patterning and patterning obtained by patterning the end side of the patterning end The deformation start side and the patterned deformation end side.

For example, the deformation level of the first alignment mark M1 of the first quadrant I When dy1 is +8, it is possible to increase the upper end of the pre-deformation start side (right side) to which the first quadrant of the non-deformed substrate model belongs (+ as shown in FIG. 7), and similarly, When the deformation level dy4 of the fourth alignment mark M4 of the fourth quadrant IV is +3, it is possible to increase the lower end of the patterned start side (right side) to which the fourth quadrant IV of the non-deformed substrate model belongs by +3 . Therefore, it is possible to create a deformed patterning start side (hereinafter, referred to as "patterned deformation start end"). Similarly, the patterning end side (left side) forming the second quadrant II and the third quadrant III can also create a patterned deformation end side that is deformed depending on the deformation level of each mark. Therefore, as shown in FIG. 7, it is possible to create a deformed substrate model having a patterned deformation start side and a patterned deformation end side. For reference, it is possible to create a deformed substrate model by joining the two ends of the patterned deformation start end and the patterned deformation end side.

After the deformed substrate model is created, the patterned segment start point as the center point of the start side of the patterned segment and the pattern as the center point of the end side of the patterned segment are calculated in the process S340 (of FIG. 3) The segment end point is where the patterning of the beam is performed on each segment of the deformed substrate model by using non-deformed substrate shape information. In Fig. 8 showing a non-deformed substrate model and a deformed substrate model, in order to describe the above process, it is assumed that the patterned starting side of the non-deformed substrate model has no deformation, and only the patterning of the first quadrant I is from The starting side is deformed to form a deformed substrate model. That is, it is assumed that the patterned deformation starting side of the deformed substrate model is expanded upward by +8 from the patterned starting side of the non-deformed substrate model and expanded downward by +3. Also, it is assumed that the patterned deformation end side of the deformed substrate model has the same position and size as the patterned end side of the non-deformed substrate model which is not expanded or contracted.

The number of beam patterning segments is assumed to be four according to the non-deformed substrate shape information, and the calculation of the patterning start point and the end of the pattern in the model of FIG. 8 is described. The process of the point.

First, it describes how to calculate the starting point of the patterning.

The entire length of the patterned deformation start side of the deformed substrate model is uniformly divided into four portions identical to the number of beam patterning sections, and each area of the side surface obtained by the division is calculated as a patterning section The position on the starting side. Therefore, the positions of the four patterned segment start sides S1' to S4' are calculated. Since the patterned starting side of the non-deformed substrate is deformed, the starting side of each patterned segment of the deformed substrate model has a larger than the starting side of each patterned segment of the non-deformed substrate model Value. The center point of the start side of each patterned segment is determined as the starting point of the beginning of the corresponding patterned segment (hereinafter, referred to as "patterned segment starting point"). Therefore, it is possible to determine the patterned starting point B1 of the first segment of the deformed substrate model, the patterned starting point B2 of the second segment, the patterned starting point B3 of the third segment, and the fourth segment The starting point B4 is patterned.

Similarly, by uniformly dividing the patterned deformation end side into four portions identical to the number of beam patterning sections, it is possible to calculate the patterning section end point from each patterned section end side obtained by division. E1 to E4.

The start and end points of each segment are used to radiate a beam from a starting point of each segment to a range containing its right and left segments. That is, embodiments of the present invention perform beam radiation from a starting point of a particular segment to an ending point of a corresponding segment. For example, when the beam is radiated to the first segment, the substrate moves such that the center point of the beam module moves from the patterned starting point B1 of the first segment to the patterning end point E1, and beam patterning is performed.

For this purpose, when the patterning process is performed on each section of the substrate, the direction of travel of the substrate platform supporting the substrate should be determined. For this purpose, in process S350 The position of the patterned starting substrate of each segment is calculated considering the slope between the starting point of the patterned segment and the ending point of the patterned segment.

Specifically, the inclination of the starting point of the connected patterning section and the ending point of the patterned section is first calculated. Referring to the deformed substrate model of FIG. 8, the first section finds the oblique line L1 that connects the patterned segment start point B1 to the patterned segment end point E1, and then finds the inclination angle θ of the oblique line. That is, as shown in FIG. 9, the inclination angle θ caused by the difference in height between the patterning section start point B1 and the patterning section end point E1 is found.

After calculating the tilt angle, as shown in FIG. 10B, the substrate state is rotated at the calculated tilt angle. Rotating the substrate state at an angle of inclination means rotating the substrate platform at an oblique angle from the center point of the platform supporting the substrate. By such rotation, the substrate rotates parallel to the patterning direction of the non-deformed substrate model, for example, by tilting, such that the substrate moves in a direction perpendicular to the beamline. The patterning direction of the non-deformed substrate model means the patterning direction when the substrate has a normal substrate shape before deformation.

When the inclination angle θ due to the difference in height between the patterning section start point B1 and the patterning section end point E1 has a positive (+) value, it is possible to move the substrate to be vertical by clockwise rotation. On the beam line, and when the tilt angle θ has a negative (-) value, it is possible to move the substrate by counterclockwise rotation to become perpendicular to the beam line.

After correction by platform rotation, the last one of each segment is determined by the patterning of the segment by correcting the coordinate value by the level of change of the patterning segment starting point and the patterning segment ending point depending on the rotation. Starting substrate position. After the substrate platform is rotated, the calculated patterned segment start point and the calculated patterned segment end point should also have a rotation value, and thus the value is corrected.

For example, the first substrate placed on the substrate platform of Figure 10A The patterned segment start point coordinates Xa, Yb of a segment should be corrected to the rotation start point coordinates Xa', Yb' due to the rotation of FIG. 10B, but still have the previously calculated positions Xa, Yb. Therefore, by moving the coordinate value by the level of change (error value) of the starting point of the patterned segment due to the rotation and the change level of the end point of the patterned segment, the coordinates Xa', Yb' are determined as the last of each segment. A patterned starting substrate position and a patterned end substrate position.

When patterning of each segment is performed based on the calculated patterned starting substrate position and the patterned ending substrate position of each segment, laser patterning from each segment is formed for each segment Different patterning directionalities from the starting point to each patterning end point are made, and thus it is possible to perform precise patterning regardless of substrate deformation. For example, when the substrate is divided into a plurality of segments on which patterning is performed, the substrate platform can be moved to have a vertical when the beam is radiated to the first segment of the substrate (as shown in FIG. 11A) The first patterned directionality L1 of the beamline, and the position of the substrate can be determined as shown in FIG. 11B, and the substrate platform can be moved to have a perpendicular to the second segment when the beam is irradiated after the first patterning is completed The second patterned directionality L1 of the beam line. Similarly, when the beam is radiated to the third segment, the substrate position can be determined as shown in FIG. 11C and the substrate platform can be moved to have a third patterned directivity L3 perpendicular to the beamline.

According to the embodiment of the present invention, even if the substrate is deformed, it is possible to prevent the patterning direction of the light beam from being erroneous by correcting the substrate using the alignment mark. Also, by preventing the patterning direction of the light beam from being erroneous, patterning can be performed on the correct portion of the substrate.

Although the present invention has been described with reference to the drawings and exemplary embodiments, the present invention is not limited by the foregoing and set. Therefore, various changes and modifications can be made by those skilled in the art without departing from the spirit of the appended claims.

S310, S320, S330, S340, S350‧‧‧ Process

Claims (9)

A method of correcting the direction and position of beam patterning, the method comprising: loading a substrate into a processing chamber; creating a virtual based on non-deformed substrate shape information representing a shape of a non-deformed substrate as a pre-deformed substrate a non-deformed substrate model; examining a level of deformation of the substrate loaded into the processing chamber and creating a virtual deformed substrate model; calculating a starting point of the patterned segment as a center point of the starting side of the patterned segment and a patterned segment end point as a center point of the end side of the patterned segment, wherein the patterning of the light beam is performed on each segment of the deformed substrate model by using the non-deformed substrate shape information; And determining a patterned starting substrate position for each segment considering a slope between the patterned segment start point and the patterned segment end point. The method of claim 1, wherein the non-deformed substrate shape information relates to shape information of a base substrate prior to application of heat or external physical force. The method of claim 2, wherein the non-deformed substrate shape information comprises a position and a length of each side of the non-deformed substrate, a patterning start side, a patterning end side, the At least one of the alignment mark coordinates of the non-deformed substrate and the number of beam patterning segments. The method of claim 3, wherein the creating of the non-deformed substrate model comprises: inspecting the non-deformed substrate shape information; Creating a virtual non-deformed substrate model of the length of each side of the non-deformed substrate shape information; the alignment mark coordinates based on the non-deformed substrate shape information on the non-deformed substrate model Place a non-deformed alignment mark as an alignment mark. The method of claim 4, wherein the creating of the deformed substrate model comprises: reading a deformation alignment as an alignment mark formed on the substrate loaded into the processing chamber Marking; measuring a level of deformation of the mark as a level of deformation between the non-deformed alignment mark and the deformation alignment mark; and creating a patterned deformation start side and a patterned deformation end side from the non-deformed substrate model a deformed substrate model, the patterned deformation start side and the patterned deformation end side are the patterning start side and patterning starting from expansion or contraction patterning according to the mark deformation level The patterning end side is obtained. The method of claim 5, wherein the calculating of the starting point of the patterned segment comprises dividing the entire length of the starting side of the patterned deformation into corresponding to the beam patterning region A portion of the number of segments and calculating the position of the starting side of each patterned segment; and calculating each center point of the starting side of the patterned segment as a starting point for the patterned segment. The method of claim 1, wherein the determining of the patterned starting substrate position for each segment comprises: Calculating a tilt angle connecting the starting point of the patterned segment to the end point of the patterned segment; rotating the substrate platform at the tilt angle to allow the substrate to be patterned parallel to the non-deformed substrate model Moving in the direction of the direction; and moving the coordinate value according to the change level of the starting point of the patterned segment according to the rotation and the change level of the end point of the patterned segment, and determining the last one of each segment Patterning the starting substrate position and patterning the end substrate position. The method of claim 7, wherein the rotating of the substrate platform at the tilt angle comprises rotating the substrate platform at the tilt angle from a center point of a platform supporting the substrate. The method of claim 7, wherein the patterned segment start point and the patterned segment end point are calculated on each segment on which the patterning of the light beam is performed, And moving the substrate to the patterned starting substrate position of each segment as the beam of each segment is patterned.