CN104238279B - A method for correcting the direction and the position of light beam patterning - Google Patents
A method for correcting the direction and the position of light beam patterning Download PDFInfo
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- CN104238279B CN104238279B CN201410253698.8A CN201410253698A CN104238279B CN 104238279 B CN104238279 B CN 104238279B CN 201410253698 A CN201410253698 A CN 201410253698A CN 104238279 B CN104238279 B CN 104238279B
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- 238000000059 patterning Methods 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 260
- 238000012545 processing Methods 0.000 claims abstract description 24
- 238000012937 correction Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 5
- 230000000977 initiatory effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 101100459256 Cyprinus carpio myca gene Proteins 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
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- RLYSXAZAJUMULG-UHFFFAOYSA-N 6-methyl-3-propan-2-ylcyclohex-2-en-1-one Chemical compound CC(C)C1=CC(=O)C(C)CC1 RLYSXAZAJUMULG-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0426—Fixtures for other work
- B23K37/0452—Orientable fixtures
Abstract
The invention provides a method for correcting the direction and the position of light beam patterning. The method comprises the following steps: a substrate is loaded in a processing chamber; a virtual non-deformation substrate model is created based on non-deformation substrate shape information expressing the shape of a non-deformation substrate as the substrate before deformation; checking the deformation level of the substrate loaded in the processing chamber and a virtual deformation substrate model is created; calculating a patterning zone starting point as the center point of a patterning zone starting side and a patterning zone ending point as the center point of a patterning zone ending side; patterning of light beams are executed in each zone of the deformation substrate model by means of utilizing the non-deformation substrate shape information; and the position of the pattering starting substrate in each zone is determined by means of considering a slop of the patterning zone starting point to the patterning zone ending point.
Description
Technical field
The present invention relates to a kind of method in the direction and position of correction beam pattern, more particularly to one kind is by light beam
It is patterned on substrate and makes the direction and position that beam pattern is corrected when substrate during specific pattern deforms
Method.
Background technology
Ink-jet and light beam radiation technology are used to make specific pattern on substrate.
Because beam pattern technology can make specific pattern simultaneously by light beam radiation on the desired part of substrate
And with being possible to precisely and rapidly be applied to the advantage of large area, therefore the technology is widely used.
General laser patterning device is included：Processing chamber housing；Substrate delivery unit, it is installed in the processing chamber,
Support substrate and flatly move substrate on the direction for carrying out is processed；And the upper part installed in processing chamber housing and send out
The module of irradiating light beam.The light beam of the beam module in processing chamber housing can be radiated the place for being loaded into laser patterning device
Substrate in reason chamber, to perform patterned process on the desired part of substrate.
However, substrate deforms because of heat or external physical strength before patterned process is performed, and work as
When performing patterned process in this deformed substrate, there is the limitation that cannot be accurately patterned.
That is, when the light beam radiation in by patterning apparatus is patterned, the radiation of light beam can be at each
Normally perform on section, on condition that the substrate for loading is the substrate 1 with common shape without deforming, as shown in Figure 1A.
However, when when performing previously processed, substrate 1 ' deforms, there is light beam cannot correctly be radiated on the substrate of deformation
Limitation, as shown in fig. 1b.Due to generally only considering the vertical shrink/expanded of deformed substrate and not considering the radiation of light beam
The directionality of (patterning), therefore cannot be patterned on exact position.
(patent document 1) Korean Patent Publication Reference Number 2012-0131338.
The content of the invention
In order to solve above-mentioned restriction, when patterned process is performed on substrate, the patterning direction and pattern to light beam
Change position to be corrected for accurate radiation.Also, even if the shape of substrate is deformed due to expansion or shrinkage, also can be just
Really perform the radiation of light beam.Also, even if the shape of substrate changes, the radiation direction of light beam also will not malfunction.
According to exemplary embodiment, a kind of direction of correction beam pattern and the method for position are included：Substrate is loaded
To in processing chamber housing；Non-deformed substrate shape information creating based on the shape for being denoted as deforming the non-deformed substrate of front substrate
Virtual non-deformed substrate model；Check the deformation level of the substrate being loaded in processing chamber housing and create virtual deformation substrate mould
Type；Calculate the patterning section starting point of the central point as patterning section origination side and terminate side as patterning section
Central point patterning section end point, wherein by using non-deformed substrate shape information deformed substrate model each
The patterning of light beam is performed on section；And in view of oblique between patterning section starting point and patterning section end point
Rate, determines the patterning starting substrates position of each section.
Non-deformed substrate shape information can be with regard in the shape for applying heat or the base substrate before external physical strength
Shape information.
Non-deformed substrate shape information can include the position of every side of non-deformed substrate and length, patterning starting
Side, patterning terminate at least one of number of side, the alignment mark coordinate of non-deformed substrate and beam pattern section.
The establishment of non-deformed substrate model can be included：Check non-deformed substrate shape information；Create with non-deformed lining
The virtual non-deformed substrate model of the length of every side of Bottom Shape information；Alignment mark based on non-deformed substrate shape information
Coordinate places the non-deformed alignment mark as alignment mark on non-deformed substrate model.
The establishment of deformed substrate model can be included：It is right as what is formed on the substrate being loaded in processing chamber housing to read
The deformation alignment mark of neat mark；
Measurement markers deformation level, i.e. the deformation level between non-deformed alignment mark and deformation alignment mark；And from
There is non-deformed substrate model creation patterned variation origination side and patterned variation to terminate the deformed substrate model of side, the figure
Caseization deforms origination side and patterned variation terminates side by originating in by deformed mark horizontal expansion or contraction patterning
The patterning that patterning origination side and patterning end at terminates side and obtains.
The calculating of patterning section starting point can be included：The whole length that will be patterned into deforming origination side is divided into correspondence
In the part of the number of beam pattern section and calculate each patterning section origination side position；And will be patterned into area
Each central point of section origination side is calculated as patterning section starting point.
The determination of the patterning starting substrates position of each section can be included：
Calculate the inclination angle of connecting pattern section starting point and patterning section end point；It is flat by the inclination angle rotation of substrate
Platform is moved up so as to allow substrate in the side in the patterning direction parallel to non-deformed substrate model；And by according to rotation
The change level of patterning section starting point and the change level moving coordinate value of patterning section end point, and determine each
Last patterning starting substrates position of section and patterning terminate substrate location.
Can include from the central point of the platform of support substrate by inclination angle rotation of substrate platform and press inclination angle rotation of substrate platform.
Patterning section starting point and patterning can be calculated in being patterned on each section for performing thereon for light beam
Section end point, and substrate can be moved to into the patterning starting of each section in the beam pattern to each section
Substrate location.
Description of the drawings
One exemplary embodiment can in more detail be understood by the following description for combining accompanying drawing and carrying out, wherein：
Figure 1A and Figure 1B show the beam pattern direction on the substrate and deformed substrate not deformed.
Fig. 2 shows correcting pattern coordinate according to an embodiment of the invention and performs the lining of beam pattern
Bottom processing meanss.
Fig. 3 is the patterning direction of the laser beams of an embodiment of the invention and the process of patterned location
Flow chart.
Fig. 4 illustrates how measurement patterning section, alignment mark and the length per side on non-deformed substrate.
Fig. 5 shows non-deformed substrate model according to an embodiment of the invention.
Fig. 6 shows the deformation level of the alignment mark in deformed substrate according to an embodiment of the invention.
Fig. 7 shows deformed substrate model according to an embodiment of the invention.
Fig. 8 shows non-deformed substrate model according to an embodiment of the invention and deformed substrate model.
Fig. 9 shows and how to calculate inclination angle according to one embodiment of present invention.
Figure 10 A and Figure 10 B are shown according to one embodiment of present invention how by inclination angle mobile platform.
Figure 11 A, Figure 11 B and Figure 11 C show how the direct of travel of substrate according to one embodiment of present invention depends on
Change in each patterning section.
Specific embodiment
The exemplary embodiment of the present invention is described in more detail below with reference to accompanying drawing.However, the present invention can be by not
Same form is implemented, and should not be construed as limited by each embodiment listed herein.On the contrary, there is provided these embodiments with
Make the present invention more comprehensively and complete, and those skilled in the art can be will fully convey the scope of the invention to.
Identical label refers to identical component in accompanying drawing.
Fig. 2 shows correcting pattern coordinate according to an embodiment of the invention and performs at the substrate of patterning
Reason device.
Perform the lining processor of beam pattern and scanning light beam and perform at patterning in substrate S on the substrate
Reason.The lining processor is included：Processing chamber housing 100；Substrate delivery unit 110, it is arranged in processing chamber housing 100,
Support substrate S, and flatly forwardly and rearwardly move substrate S；And installed in the side of processing chamber housing 100 and launch light beam
Beam module 200, the beam module is towards substrate delivery unit 110.
Substrate delivery unit 110 can include the substrate platen for placing substrate, and allow as the movement of substrate platen exists
Beam pattern is sequentially carried out on the surface of substrate.Because in addition to moving in x and y direction, the platform also has can
Rotation configuration, so it can rotate.
Also, with charge coupled device (charge coupled device；CCD) vision camera of sensor is not (
Diagram) it is arranged in the processing chamber housing.The vision camera (not shown) can capture substrate and recognize the shape on substrate
Into alignment mark position.
Also, control unit inspection (not shown) is loaded into the deformation level of the substrate in chamber, corrects beam pattern
Scope, moves substrate and performs light beam radiation according to corrected value.
The process of the patterned substrate by using the lining processor with this configuration is hereafter briefly described.It is first
First, when substrate S is loaded onto in processing chamber housing 100 and is placed on substrate delivery unit 110, imaged by using vision
Machine (not shown) come transmit substrate delivery unit 110 with alignment mark match so as to substrate S of aliging.When completing substrate alignment
When, by bombardment with laser beams to substrate S.When substrate is flatly forwardly and rearwardly moved by substrate delivery unit 110, laser beam
It is radiated on the substrate.
When laser beam radiation, laser beam is only radiated pattern target region to perform selective patterning.Citing comes
Say, by performing the triggering that can control light beam vibration to light beam, it is possible to only by bombardment with laser beams to below beam module
The pattern target region of mobile substrate.That is, beam module simply has the ready state for receiving electric power, and
And be ready to perform laser generation.Trigger can be sent to beam module with the pattern target of substrate by control unit
Region performs selective radiation when being placed on the light beam radiation path of beam module.Figure is performed possibly through other technologies
Case.
Also, when the substrate being loaded in processing chamber housing has due to the deformation of the reasons such as example hot or external physical strength
During shape, predetermined pattern initial range and predetermined pattern end range are simultaneously inaccurately matched with deformed substrate, and because
This patterning is performed on unexpected direction.Therefore, the present invention is described in detail and how to consider that this substrate deforms water
Put down and by reference to the control unit correcting pattern direction of Fig. 3.
Fig. 3 is the patterning direction of laser beams according to an embodiment of the invention and the process of patterned location
Flow chart.
Hereinafter, substrate has four patterning sections, and how description is performed on each patterning section
One example of the radiation of light beam.That is, working as, substrate is moved and its first section is placed on fixed beam module lower section
When, radiation laser beam and substrate are moved back and forth to perform patterning on the first section, and subsequently in the second section, the 3rd area
Patterning is performed on section and the 4th section.In addition to the four patterning sections that will be described below, the reality of the present invention
Apply example to be also possible to be applied to the substrate with single patterning section or multiple patterning sections.
First, will be patterned into target substrate in process S310 to be loaded in processing chamber housing.Due to pattern target substrate
Be previously during with heat or external physical strength manufacture, therefore it may have different from initial substrates deformation shape
Shape.
When will be patterned into target substrate and being loaded in processing chamber housing, in process S320, control unit is based on regard to non-
The virtual non-deformed substrate model of the information creating of deformed substrate shape, described information is denoted as the deformation of pattern target substrate
The shape of the non-deformed substrate of substrate before.In order to create non-deformed substrate model, when will be patterned into target substrate place is put into
When in reason chamber, the information of substrate (is referred to as " non-deformed before the deformation that control unit first checks for regard to pattern target substrate
Substrate shape information ").Non-deformed substrate shape information is with regard to before being affected by heat or external physical strength or in deformation
The shape information of the substrate before appearance.Can be according to the database for prestoring such non-deformed substrate shape information
(database, DB) or by from previously processed device receive with regard to being loaded into patterned process chamber in pattern target lining
The shape information of substrate checks processing chamber housing before the deformation at bottom.
Position of the non-deformed substrate shape packet containing the every side with regard to non-deformed substrate and length, patterning starting
Side, patterning terminate at least one of the number of side, the alignment mark coordinate of non-deformed substrate and beam pattern section
Information.As shown in Figure 4, the position of every side of non-deformed substrate is the position coordinates of every side, and the length per side
Right length d1 comprising non-deformed substrate, left length d2, upper length d3 and lower side length d4.Also, pattern starting
Side is the side that beam pattern originates in, and it is that the side ended at is patterned after patterning is completed to pattern end side.Lift
For example, when performing patterning in the diagram when left side is moved to from right side in substrate level, right side d1 is changed into patterning
Beginning side and left side d2 be changed into patterning terminate side.Also, non-deformed substrate shape packet is containing being formed on non-deformed substrate
Multiple alignment mark coordinates.For example, when substrate is divided into four quadrants of each self-contained alignment mark, it is placed on
The first alignment mark M1 on first quartile have as non-deformed substrate shape information the first alignment mark coordinate value x1,
y1.Also, the number of beam pattern section is represented when substrate is divided into section with radiation laser beam and performs patterning
The number of section.For example, as shown in Figure 4, when substrate is divided into four section S1 to S4 and order performs light beam spoke
When penetrating, the number of beam pattern section is four.
After non-deformed substrate shape information is checked, control unit creates non-deformed substrate model as shown in Figure 5.
Non-deformed substrate model is created, the non-deformed substrate model is with every with what is obtained from non-deformed substrate shape information
The virtual substrate model of the length identical size of side.Additionally, the alignment mark coordinate based on non-deformed substrate shape information,
Alignment mark (hereinafter, being referred to as " non-deformed alignment mark ") is placed on non-deformed substrate model.Therefore, pass through
Using the non-deformed substrate shape information of substrate before practical distortion, control unit is created to be had and identical shape shown in Fig. 5
Virtual substrate model.
Create non-deformed substrate model after, to being loaded into processing chamber housing in pattern target substrate deformation level
Checked, to create virtual deformation substrate model in (Fig. 3's) process S320.
The pattern target lining in processing chamber housing is loaded into is captured by using the vision camera with ccd sensor
Each alignment mark made by bottom, and reading alignment mark (hereinafter, is referred to as " deformation from the image for being captured
Alignment mark ").By the coordinate of the deformation alignment mark for reading in this way and the non-deformed formed on non-deformed substrate model
Alignment mark is compared, to measure the deformation level between alignment mark.In order to be referred to, due to the coordinate of alignment mark
Obtain from non-deformed substrate shape information, so the point that vision camera capture alignment mark is placed on.Vision is taken the photograph
The number of camera can be identical with the number of alignment mark.
If formerly the back substrate of pretreating device execution process is due to heat or the expansion of external physical strength or shrinks, then
Deformation is will appear between alignment mark.
Fig. 6 is regarded by capturing the amplification of the image that the alignment mark of pattern target substrate is obtained with vision camera
Figure.To be placed on because vision camera obtains alignment mark (non-deformed alignment mark) from non-deformed substrate shape information
Coordinate, therefore the video camera is placed and is captured to make to carve non-deformed in the substrate before substrate deforms
The central point of alignment mark is placed on the center of image.However, when pattern target substrate has due to heat or external physical power
During the deformed shape of amount, the position of alignment mark also changes.For example, as shown in Figure 6, when the first quartile of substrate
When expanding upwards and deforming, the first alignment mark M1 made on the first quartile is also disposed on the part that moves up.
The first alignment mark (the first alignment mark of deformation) for being engraved in pattern target substrate simultaneously is not placed in being taken the photograph by First look
The center of the image that camera cam1 shoots, but with the position for moving up.Therefore, it is possible to measure be imaged by First look
The central point (central point of the first alignment mark of non-deformed) of the image of machine cam1 captures and the first alignment mark of deformation
Vertical range dy1 between central point is used as deformed mark level.In order to be referred to, depending on the length direction of light beam,
Deformed mark level can be subject to different measuring.When it is assumed that the spoke of light beam is carried out as length direction by the vertical axis using substrate
When penetrating, can using non-deformed alignment mark and deformation alignment mark between vertical demension measurement as deformed mark level, and
Conversely, when it is assumed that carrying out the radiation of light beam as length direction by the trunnion axis using substrate, non-deformed alignment can be marked
Note and the horizontal range deformed between alignment mark are measured as deformed mark level.
After the deformed mark level for measuring the alignment mark made on each quadrant of pattern target substrate,
Deformed substrate model is created based on deformed mark level in (Fig. 3's) process S330.Deformation is created from non-deformed substrate model
Substrate model, the deformed substrate model has by expansion or shrinks patterning origination side and the patterning that patterning originates in
The patterned variation origination side and patterned variation that the patterning for ending at terminates side and obtains terminates side.
For example, when deformation level dy1 of the first alignment mark M1 of first quartile I is+8, it is possible to by non-change
The upper end increase+8 of origination side (right side) is patterned before deformation belonging to the first quartile of shape substrate model (such as institute in Fig. 7
Show), and similarly, when deformation level dy4 of the 4th alignment mark M4 of fourth quadrant IV is+3, it is possible to by non-deformed
The lower end increase+3 of the patterning origination side (right side) belonging to fourth quadrant IV of substrate model.Therefore, it is possible to create change
Shape patterning origination side (hereinafter, being referred to as " patterned variation initiating terminal ").Similarly, the second quadrant II and the 3rd is formed
The patterning of quadrant III terminates side (left side) can also create the patterned variation deformed depending on the deformation level that each is marked
Terminate side.Therefore, as shown in Figure 7, it is possible to create the change for terminating side with patterned variation origination side and patterned variation
Shape substrate model.In order to be referred to, it is possible to deform initiating terminal by connecting patternization and patterned variation terminates the two of side
Hold and create deformed substrate model.
After deformed substrate model is created, fall into a trap in (Fig. 3's) process S340 and can be regarded as to pattern section origination side
Central point patterning section starting point and as patterning section terminate side central point patterning section end point, its
In the patterning of light beam is performed on each section of deformed substrate model by using non-deformed substrate shape information.Illustrating
In Fig. 8 of non-deformed substrate model and deformed substrate model, in order to describe said process, it is assumed that the pattern of non-deformed substrate model
Change origination side and there is no deformation, and the only patterning origination side of first quartile I deforms to form deformed substrate model.
That is, it is assumed that the patterned variation origination side of deformed substrate model is initial on the side from the patterning of non-deformed substrate model
Expansion+8 and downwards expansion+3.And, it is assumed that the patterned variation of deformed substrate model terminate side have with without expansion or
The patterning of the non-deformed substrate model of contraction terminates side identical positions and dimensions.
The number that beam pattern section is assumed according to non-deformed substrate shape information is four, and describes calculating Fig. 8
Model in patterning starting point and patterning end point process.
First, it is described how calculate patterning starting point.
The whole length of the patterned variation origination side of deformed substrate model is divided evenly into and beam pattern section
The same number of four parts, and by divide obtain side each region be calculated as pattern section starting
The position of side.Therefore, the position of four patterning section origination side S1 ' to S4 ' is calculated.Because the patterning of non-deformed substrate rises
Beginning, side was deformation, thus each patterning section origination side of deformed substrate model have with non-deformed substrate model each
Patterning section origination side compares larger value.The central point of each patterning section origination side is confirmed as corresponding patterning
The starting point (hereinafter, being referred to as " patterning section starting point ") of section initiating terminal.Therefore, it is possible to determine deformed substrate
Patterning starting point B1 of the first section of model, patterning starting point B2 of the second section, the patterning starting of the 3rd section
Patterning starting point B4 of point B3 and the 4th section.
Similarly, by will be patterned into deformation terminate side be evenly divided into it is the same number of with beam pattern section
Four parts, it is possible to which each the patterning section according to being obtained by division is terminated side calculating patterning section end point E1 and arrived
E4。
The starting point and end point of each section is for from the starting point of each section to comprising its right side and left side section
Certain limit in radiation laser beam.That is, embodiments of the invention are performed from the starting point of particular section to respective segments
End point light beam radiation.For example, when light beam radiation is to the first section, substrate moves the center for causing beam module
O'clock patterning end point E1 is moved to from patterning starting point B1 of the first section, and perform beam pattern.
For this purpose, when patterning process is performed on each section of substrate, the substrate that should determine that support substrate is put down
The direct of travel of platform.For this purpose, in process S350, it is considered to pattern between section starting point and patterning section end point
Slope calculating the patterning starting substrates position of each section.
Specifically, the inclination angle of connecting pattern section starting point and patterning section end point is calculated first.With reference to Fig. 8
Deformed substrate model, the first section find will be patterned into section starting point B1 be connected to patterning section end point E1 inclination
Line L1, and subsequently find the inclination angle theta of parallax.That is, as shown in Figure 9, find by patterning section starting point B1
The inclination angle theta caused with the difference in height between patterning section end point E1.
After inclination angle is calculated, as shown in Figure 10 B, substrate condition is by the inclination angle rotation for being calculated.Serve as a contrast by inclination angle rotation
Bottom state means from the central point of the platform of support substrate by inclination angle rotation of substrate platform.By such rotation, substrate is parallel
Rotate in the patterning direction of non-deformed substrate model, for example, rotate by inclination angle so that substrate is perpendicular to the side of light beam line
Move up.The patterning direction of non-deformed substrate model means when substrate has normal substrate shape before deformation
Patterning direction.
When due to patterning the inclination angle theta tool that the difference in height between section starting point B1 and patterning section end point E1 is produced
When having just (+) value, it is possible to transfer mobile substrate by dextrorotation so that it becomes perpendicular to light beam line, and when inclination angle theta tool
When having negative (-) value, it is possible to move substrate by rotate counterclockwise so that it becomes perpendicular to light beam line.
After being corrected by platform rotation, by by the patterning section starting point and patterning for depending on rotation
The change level calibration coordinate value of section end point come determine each section last depend on section patterning starting
Substrate location.After substrate platen rotation, the patterning section starting point for calculating and the patterning section for calculating terminate
Point should also have a rotational value, and therefore described be worth to correct.
For example, the patterning section starting of the first section of the substrate being initially placed in the substrate platen of Figure 10 A
Point coordinates Xa, Yb should be corrected to revolution starting point coordinate Xa ', Yb ' due to the rotation of Figure 10 B, but still have first
Before position Xa, Yb for calculating.Therefore, by by due to rotation patterning section starting point change level (error amount) and
The change level moving coordinate value of patterning section end point, by coordinate Xa ', Yb ' last figure of each section is defined as
Case starting substrates position and patterning terminate substrate location.
Terminate substrate location when the patterning starting substrates position for calculating and patterning that are based on each section to perform often
During the patterning of individual section, patterning to each from each patterning starting point for the laser patterning with regard to each section is formed
The different patterning directionality of end point, and it is therefore possible to perform accurate patterning regardless of whether substrate deformation how.
For example, when substrate is divided into the multiple sections for performing patterning thereon, when the first section of light beam radiation to substrate
(as illustrated in figure 11A) substrate platen may move and have and pattern directionality L1 perpendicular to the first of light beam line when, and can
To determine the position of substrate, and the substrate when the second section of light beam radiation after the first patterning is completed as shown in Figure 11 B
Platform moveable and have perpendicular to light beam line second pattern directionality L2.Similarly, when light beam radiation is to the 3rd section
When, can as shown in fig. 11C determine substrate location and substrate platen can be moved and have the second figure perpendicular to light beam line
Case directionality L3.
Embodiments in accordance with the present invention, even if substrate deforms, it is also possible to entered to substrate by using alignment mark
Row correction malfunctions come the patterning direction for preventing light beam.Also, malfunctioned by preventing the patterning direction of light beam, can be in substrate
Correct part on perform patterning.
Although applicant's refer to the attached drawing and exemplary embodiment are describing the present invention, the present invention is not exposed in above-mentioned
The restriction of appearance and it is defined by the following claims.Therefore, those skilled in the art can be without departing from appended power
Implement variations and modifications on the premise of the technical spirit of sharp claim.
Claims (6)
1. a kind of method in the direction and position of correction beam pattern, methods described includes：
In loading a substrate into processing chamber housing；
Non-deformed substrate shape information creating non-deformed based on the shape for being denoted as deforming the non-deformed substrate of front substrate is served as a contrast
Bed die type；
Check the deformation level of the substrate being loaded in the processing chamber housing and create deformed substrate model；
Calculate the patterning section starting point of the central point as patterning section origination side and terminate side as patterning section
Central point patterning section end point, wherein by using the non-deformed substrate shape information in the deformed substrate mould
The patterning of light beam is performed on each section of type；And
Consider the slope between the patterning section starting point and the patterning section end point, determine the figure of each section
Case starting substrates position；
Wherein described non-deformed substrate shape information includes the number of beam pattern section；
The establishment of wherein described deformed substrate model includes：
Read the deformation alignment mark as the alignment mark formed on the substrate being loaded in the processing chamber housing；
Measure the deformed mark level as the deformation level between the non-deformed alignment mark and the deformation alignment mark；
And
From the non-deformed substrate model creation there is patterned variation origination side and patterned variation to terminate the deformation of side
It is by expanding by the deformed mark level that substrate model, the patterned variation origination side and the patterned variation terminate side
Or shrink the patterning that the patterning origination side that originates in of patterning and patterning end at and terminate side and obtain
's；
The calculating of wherein described patterned area section starting point includes：
The whole length of the patterned variation origination side is divided into into the portion of the number corresponding to the beam pattern section
Divide and calculate position of each patterning section origination side；And
Each central point of the patterning section origination side is calculated as patterning section starting point；
Wherein the patterned variation is divided by the number of the beam pattern section and terminate side, obtained by division with basis
Each the patterning section for obtaining terminates side and calculates the patterning section end point；And the wherein patterning of each section
The determination of starting substrates position includes：
Calculate the inclination angle of the connection patterning section starting point and the patterning section end point；
By the inclination angle rotation of substrate platform so as to allowing substrate in the patterning parallel to the non-deformed substrate model
The side in direction moves up；And
Change level and the change of the patterning section end point by the patterning section starting point according to the rotation
Change moves horizontally coordinate value, and determines that last patterning starting substrates position of each section and patterning terminate substrate
Position.
2. method according to claim 1, wherein the non-deformed substrate shape information is with regard to applying heat or outside
The shape information of the base substrate before physics strength.
3. method according to claim 2, wherein the non-deformed substrate shape information also includes the non-deformed substrate
Every side position and length, patterning origination side, patterning terminate the alignment mark coordinate of side and the non-deformed substrate
At least one of.
4. method according to claim 3, wherein the establishment of the non-deformed substrate model includes：
Check the non-deformed substrate shape information；
Create the non-deformed substrate model of the length of the every side with the non-deformed substrate shape information；
The alignment mark coordinate based on the non-deformed substrate shape information places work on the non-deformed substrate model
For the non-deformed alignment mark of alignment mark.
5. method according to claim 1, wherein the substrate platen is included from support by the rotation at the inclination angle
The central point of the platform of the substrate rotates the substrate platen by the inclination angle.
6. method according to claim 1, wherein counting being patterned in described in light beam on each section for performing thereon
The patterning section starting point and the patterning section end point are calculated, and will in the beam pattern to each section
The substrate moves to the patterning starting substrates position of each section.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130068364A KR101493013B1 (en) | 2013-06-14 | 2013-06-14 | Method for compensating beam patterning direction and position |
| KR10-2013-0068364 | 2013-06-14 |
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| Publication Number | Publication Date |
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| CN104238279A CN104238279A (en) | 2014-12-24 |
| CN104238279B true CN104238279B (en) | 2017-04-12 |
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| CN201410253698.8A Expired - Fee Related CN104238279B (en) | 2013-06-14 | 2014-06-09 | A method for correcting the direction and the position of light beam patterning |
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| Country | Link |
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| KR (1) | KR101493013B1 (en) |
| CN (1) | CN104238279B (en) |
| TW (1) | TWI544275B (en) |
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| JP7034825B2 (en) * | 2018-05-16 | 2022-03-14 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing device and charged particle beam drawing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6760054B1 (en) * | 1999-11-11 | 2004-07-06 | Pentax Corporation | Imaging apparatus utilizing laser beams |
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| KR20010105614A (en) * | 2000-05-16 | 2001-11-29 | 구자홍 | Centrifugal fan |
| JP2005088060A (en) * | 2003-09-18 | 2005-04-07 | Sumitomo Heavy Ind Ltd | Laser beam machining device and method, and weld position correcting program |
| US7250237B2 (en) * | 2003-12-23 | 2007-07-31 | Asml Netherlands B.V. | Optimized correction of wafer thermal deformations in a lithographic process |
| US7462429B2 (en) * | 2005-10-12 | 2008-12-09 | Asml Netherlands B.V. | Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate |
| JP5903891B2 (en) * | 2010-01-18 | 2016-04-13 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| EP2392970A3 (en) * | 2010-02-19 | 2017-08-23 | ASML Netherlands BV | Method and apparatus for controlling a lithographic apparatus |
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|---|---|---|---|---|
| US6760054B1 (en) * | 1999-11-11 | 2004-07-06 | Pentax Corporation | Imaging apparatus utilizing laser beams |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101493013B1 (en) | 2015-02-13 |
| CN104238279A (en) | 2014-12-24 |
| KR20140146263A (en) | 2014-12-26 |
| TW201447474A (en) | 2014-12-16 |
| TWI544275B (en) | 2016-08-01 |
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