TW201446415A - Polishing pad and polishing method - Google Patents
Polishing pad and polishing method Download PDFInfo
- Publication number
- TW201446415A TW201446415A TW103111358A TW103111358A TW201446415A TW 201446415 A TW201446415 A TW 201446415A TW 103111358 A TW103111358 A TW 103111358A TW 103111358 A TW103111358 A TW 103111358A TW 201446415 A TW201446415 A TW 201446415A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polishing pad
- annular groove
- pad
- polishing surface
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明是有關於一種研磨墊以及研磨方法,特別是有關於一種藉由化學機械研磨法來研磨被研磨物時所使用的研磨墊以及使用了此種研磨墊的研磨方法。 The present invention relates to a polishing pad and a polishing method, and more particularly to a polishing pad used for polishing an object to be polished by a chemical mechanical polishing method and a polishing method using the same.
先前以來,作為對半導體晶圓(wafer)或液晶顯示器用玻璃基板、光罩(photomask)用玻璃基板、磁碟用玻璃基板等被研磨物的表面進行研磨而平坦化的方法,使用化學機械研磨法((Chemical Mechanical Polishing,CMP)法)。當使用CMP法對被研磨物進行研磨時,將研磨墊抵壓至被研磨物,一邊向兩者之間供給研磨液(slurry)一邊使研磨墊與被研磨物旋轉。研磨液藉由伴隨研磨墊旋轉的離心力,而自中心側流向外側,並最終被排出至研磨墊的外部。而且,近年來,為了達成使研磨液均等且充分地遍布至被研磨物的表面而使被研磨物均勻且高精度地平坦化、抑制高價研磨液的消耗、及有效率地排出成為刮痕的原因的研磨屑,而多使用在研磨墊的研磨面形成各種形狀的槽的技術。 In the past, chemical mechanical polishing has been used as a method of polishing and planarizing the surface of a workpiece such as a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a photomask, or a glass substrate for a disk. (Chemical Mechanical Polishing (CMP) method). When the object to be polished is polished by the CMP method, the polishing pad is pressed against the object to be polished, and the polishing pad and the object to be polished are rotated while supplying a slurry therebetween. The polishing liquid flows from the center side to the outside side by the centrifugal force accompanying the rotation of the polishing pad, and is finally discharged to the outside of the polishing pad. In addition, in order to achieve uniform and high-precision flattening of the object to be polished, it is possible to achieve uniform and high-precision planarization of the workpiece, and to suppress the consumption of the expensive polishing liquid and to efficiently discharge the scratch. For the purpose of grinding debris, a technique of forming grooves of various shapes on the polishing surface of the polishing pad is often used.
而且,作為表面形成著槽的研磨墊,專利文獻1中記載的研磨墊已為人所知。 Further, as a polishing pad having a groove formed on its surface, the polishing pad described in Patent Document 1 is known.
[專利文獻1]日本專利特開2004-358653號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-358653
然而,專利文獻1中記載的研磨墊中,槽的延伸方向與研磨墊的旋轉方向密切相關,研磨時,僅能夠向特定的一個方向旋轉。而且,若在研磨時使研磨墊一直向一個方向旋轉,則研磨墊的研磨面的絨毛朝向旋轉方向下游側傾倒。而且,若研磨面的絨毛傾倒,則研磨墊表面的發泡開孔部容易堵住。而且,若發泡開孔部堵住,則存在研磨液中的填料的保持能力下降,研磨墊的研磨率降低的問題。 However, in the polishing pad described in Patent Document 1, the direction in which the groove extends is closely related to the rotation direction of the polishing pad, and it is only possible to rotate in a specific one direction during polishing. Further, when the polishing pad is rotated in one direction at the time of polishing, the pile of the polishing surface of the polishing pad is tilted toward the downstream side in the rotation direction. Further, when the pile of the polishing surface is poured, the foamed opening portion on the surface of the polishing pad is likely to be blocked. Further, when the foamed opening portion is blocked, there is a problem that the holding ability of the filler in the polishing liquid is lowered and the polishing rate of the polishing pad is lowered.
而且,為了消除研磨面的堵塞而需要進行修整(conditioning)以使研磨面的絨毛立起,但在先前所使用的容易引起堵塞的研磨墊中,存在修整的頻率相對變高而研磨墊的壽命變短的問題。 Further, in order to eliminate the clogging of the polishing surface, it is necessary to perform conditioning to raise the pile surface of the polishing surface. However, in the polishing pad which is used to cause clogging, the frequency of the dressing is relatively high and the life of the polishing pad is relatively high. Shortening the problem.
因此,本發明是為了解決上述問題而完成,其目的在於提供一種藉由抑制研磨面的堵塞而可抑制研磨墊的研磨率降低、且壽命長的研磨墊。 Accordingly, the present invention has been made to solve the above problems, and an object thereof is to provide a polishing pad which can suppress a decrease in polishing rate of a polishing pad and has a long life by suppressing clogging of a polishing surface.
為了解決上述課題,本發明是包括圓形的研磨面且中心部挖空為圓形的圓環(donut)狀的研磨墊,上述研磨墊的特徵在 於:包括形成於該研磨面的多個環狀槽,各個環狀槽呈正圓(true circle)且以與圓形的研磨面的圓周相切的方式配置,在將形成上述研磨面的圓的半徑設為R、上述挖空的中心部的圓的半徑設為r、上述環狀槽的直徑設為X的情況下,R-r≦X≦R的關係成立。或者,為包括圓形的研磨面,其特徵在於:包括形成於該研磨面的多個環狀槽,各個環狀槽呈正圓且以與圓形的研磨面的圓周相切的方式配置,在將形成上述研磨面的圓的半徑設為R、上述環狀槽的直徑設為X的情況下,X≦R的關係成立,上述環狀槽與鄰接的環狀槽相切或交叉。 In order to solve the above problems, the present invention is a donut-shaped polishing pad including a circular polishing surface and having a central portion hollowed out in a circular shape, and the polishing pad is characterized in that The method includes a plurality of annular grooves formed on the polishing surface, each of the annular grooves being in a true circle and arranged to be tangent to a circumference of the circular polishing surface, and a circle forming the polishing surface When the radius is R, the radius of the circle of the hollowed-out central portion is r, and the diameter of the annular groove is X, the relationship of Rr≦X≦R is established. Or a circular polishing surface, comprising: a plurality of annular grooves formed on the polishing surface, each annular groove being rounded and arranged to be tangent to a circumference of the circular polishing surface; When the radius of the circle forming the polishing surface is R and the diameter of the annular groove is X, the relationship of X≦R is established, and the annular groove is tangent to or intersects with the adjacent annular groove.
根據如此構成的本發明,可提供具有呈正圓且以與圓形的研磨面的圓周相切的方式配置的多個環狀槽的研磨墊。而且,此種研磨墊的環狀槽即便在使研磨墊向任一方向旋轉的情況下,均可將研磨液較佳地排出且加以保持。即,呈正圓的環狀槽包含相對於研磨墊的圓形狀面的半徑呈線對象地配置且呈弧狀延伸的2個半環狀槽。而且,在使具有上述2個半環狀槽的研磨墊旋轉時,因一個半環狀槽朝向旋轉方向下游側呈現圓弧,故可使研磨液分散於研磨墊的中心與研磨墊的側壁之間,因另一個半環狀槽朝向旋轉方向上游側呈現圓弧,故可使已到達研磨墊的側壁但尚未排出的研磨液回到研磨墊的中心方向。而且,在使研磨墊反向旋轉時,因上述另一個半環狀槽朝向旋轉方向下游側呈現圓弧,一個半環狀槽朝向旋轉方向上游側呈現圓弧,故各個半環狀槽發揮與上述情況相反的作用。因此,本發明的研磨墊無論向哪一個 方向旋轉均可使研磨液充分地分散。由此,根據本發明的研磨墊,無論向哪一個方向旋轉均不會使研磨液的流動性降低而可發揮高研磨性能,因而可抑制使研磨墊持續向一個方向旋轉所引起的堵塞。而且,以使研磨墊反向旋轉的方式來切換旋轉方向,藉此可使朝向旋轉方向下游側傾倒的絨毛豎起。因此,無須在每次切換旋轉方向時進行修整,從而可抑制修整的頻率增加所導致的製品壽命的縮短。 According to the invention thus constituted, it is possible to provide a polishing pad having a plurality of annular grooves arranged in a perfect circle and tangential to the circumference of the circular polishing surface. Further, the annular groove of the polishing pad can preferably discharge and hold the polishing liquid even when the polishing pad is rotated in either direction. That is, the annular groove having a perfect circle includes two semi-annular grooves that are arranged in a line shape with respect to the radius of the circular surface of the polishing pad and that extend in an arc shape. Further, when the polishing pad having the two semi-annular grooves is rotated, since the one semi-annular groove has an arc toward the downstream side in the rotation direction, the polishing liquid can be dispersed in the center of the polishing pad and the side wall of the polishing pad. Since the other semi-annular groove assumes an arc toward the upstream side in the rotational direction, the polishing liquid that has reached the side wall of the polishing pad but has not been discharged can be returned to the center direction of the polishing pad. Further, when the polishing pad is rotated in the reverse direction, the other semi-annular groove presents an arc toward the downstream side in the rotation direction, and one semi-annular groove presents an arc toward the upstream side in the rotation direction, so that each semi-annular groove functions The opposite of the above situation. Therefore, the polishing pad of the present invention is whichever The direction rotation allows the slurry to be sufficiently dispersed. Thus, the polishing pad according to the present invention can exhibit high polishing performance without lowering the fluidity of the polishing liquid in any direction, thereby suppressing clogging caused by the polishing pad continuing to rotate in one direction. Further, the rotation direction is switched so that the polishing pad rotates in the reverse direction, whereby the pile which is tilted toward the downstream side in the rotation direction can be erected. Therefore, it is not necessary to perform trimming each time the direction of rotation is switched, so that the shortening of the life of the product due to the increase in the frequency of trimming can be suppressed.
而且,本發明中,較佳為上述多個環狀槽具有相同的直徑,上述多個環狀槽的中心分別與形成研磨面的圓呈同心地配置、且配置於直徑比形成研磨面的圓的直徑短的圓的圓周上。 Further, in the invention, it is preferable that the plurality of annular grooves have the same diameter, and the centers of the plurality of annular grooves are arranged concentrically with the circle forming the polishing surface, and are disposed in a circle having a diameter larger than the polishing surface. The diameter of the circle is short on the circumference.
根據如此構成的本發明,可在所有環狀槽中將從環狀槽的中心到形成圓的研磨面的中心為止的距離設為相同。藉此,可將環狀槽、進而半環狀槽更均勻地配置於研磨面上,從而可使研磨液更均勻地分散於研磨面上。 According to the present invention thus constituted, the distance from the center of the annular groove to the center of the polishing surface forming the circle can be made the same in all the annular grooves. Thereby, the annular groove and the further semi-annular groove can be more uniformly arranged on the polishing surface, and the polishing liquid can be more uniformly dispersed on the polishing surface.
而且,本發明中,較佳為上述多個環狀槽以相對於形成上述研磨面的圓的直徑呈線對稱的方式而配置。 Further, in the invention, it is preferable that the plurality of annular grooves are arranged to be line symmetrical with respect to a diameter of a circle forming the polishing surface.
根據如此構成的本發明,可將環狀槽、進而半環狀槽均勻地配置於研磨面上,從而可使研磨液更均勻地分散於研磨面上。 According to the present invention thus constituted, the annular groove and the semi-annular groove can be uniformly disposed on the polishing surface, and the polishing liquid can be more uniformly dispersed on the polishing surface.
該些情況下,較佳為上述多個環狀槽具有3個至16個環狀槽。 In these cases, it is preferable that the plurality of annular grooves have three to six annular grooves.
根據如此構成的本發明,藉由將環狀槽的數量設為至少3個,而可使研磨液充分地分散。而且,藉由將環狀槽的數量至多 設為16個,而可抑制在研磨墊的中心附近槽的密度增高而研磨液滯留,且可減少研磨液容易滯留的環狀槽彼此的交點。 According to the invention thus constituted, the polishing liquid can be sufficiently dispersed by setting the number of the annular grooves to at least three. Moreover, by at most the number of annular grooves In the case of 16 pieces, it is possible to suppress an increase in the density of the grooves in the vicinity of the center of the polishing pad, and the polishing liquid is retained, and the intersection of the annular grooves in which the polishing liquid is likely to remain can be reduced.
如以上般,根據本發明,可提供一種藉由抑制研磨面的堵塞而可抑制研磨墊的研磨率降低、且壽命長的研磨墊。 As described above, according to the present invention, it is possible to provide a polishing pad which can suppress a decrease in the polishing rate of the polishing pad and which has a long life by suppressing clogging of the polishing surface.
1‧‧‧兩面研磨裝置 1‧‧‧Two-side grinding device
3‧‧‧被研磨物 3‧‧‧Abrased objects
5‧‧‧研磨壓盤 5‧‧‧grinding platen
7‧‧‧研磨墊 7‧‧‧ polishing pad
9‧‧‧研磨面 9‧‧‧Grinding surface
13‧‧‧保持器 13‧‧‧ Keeper
15‧‧‧軸 15‧‧‧Axis
19‧‧‧環狀槽 19‧‧‧ annular groove
19a、19b‧‧‧半環狀槽 19a, 19b‧‧‧ semi-annular groove
21‧‧‧絨毛 21‧‧‧ fluff
A、B‧‧‧箭頭 A, B‧‧ arrows
C‧‧‧研磨面的中心 C‧‧‧Center of the grinding surface
r‧‧‧挖空的中心部的圓的半徑 r‧‧‧The radius of the circle at the center of the hollowed out
R‧‧‧形成研磨面的圓的半徑 R‧‧‧The radius of the circle forming the abrasive surface
X‧‧‧環狀槽的直徑 X‧‧‧ diameter of the annular groove
圖1是表示適用本發明的實施形態的研磨墊的兩面研磨裝置的剖面圖。 Fig. 1 is a cross-sectional view showing a double-side polishing apparatus to which a polishing pad according to an embodiment of the present invention is applied.
圖2是從研磨面側觀察本發明的實施形態的研磨墊的平面圖。 Fig. 2 is a plan view of the polishing pad according to the embodiment of the present invention as seen from the side of the polishing surface.
圖3是圖2的區域III的放大圖。 Fig. 3 is an enlarged view of a region III of Fig. 2.
圖4是從研磨面側觀察本發明的實施形態的研磨墊的平面圖。 Fig. 4 is a plan view of the polishing pad according to the embodiment of the present invention as seen from the side of the polishing surface.
圖5是從研磨面側觀察本發明的實施形態的研磨墊的平面圖。 Fig. 5 is a plan view of the polishing pad according to the embodiment of the present invention as seen from the side of the polishing surface.
圖6(a)、圖6(b)是從研磨面側觀察本發明的實施形態的變形例的研磨墊的平面圖。 (a) and (b) of FIG. 6 are plan views of a polishing pad according to a modification of the embodiment of the present invention as seen from the side of the polishing surface.
圖7(a)、圖7(b)是從研磨面側觀察本發明的實施形態的變形例的研磨墊的平面圖。 7(a) and 7(b) are plan views of a polishing pad according to a modification of the embodiment of the present invention as seen from the side of the polishing surface.
圖8是表示本發明的實施例及比較例的研磨墊的研磨率的變化(shift)的曲線圖。 Fig. 8 is a graph showing a change in the polishing rate of the polishing pad of the examples and the comparative examples of the present invention.
圖9是表示本發明的實施例及比較例的研磨墊的研磨率的平均值及標準偏差的曲線圖。 Fig. 9 is a graph showing the average value and standard deviation of the polishing rates of the polishing pads of the examples and comparative examples of the present invention.
以下,參照圖式對本發明的實施形態的研磨墊進行說明。圖1是表示適用本發明的實施形態的研磨墊的兩面研磨裝置的剖面圖。 Hereinafter, a polishing pad according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing a double-side polishing apparatus to which a polishing pad according to an embodiment of the present invention is applied.
首先,如圖1所示,兩面研磨裝置1藉由CMP法將被研磨物3的面平坦化。兩面研磨裝置1包括繞旋轉軸旋轉的一對研磨壓盤5、固定於研磨壓盤5的上表面的研磨墊7、以及用以保持被研磨物3的保持器13。兩面研磨裝置1在相向的研磨壓盤5的面上分別設置研磨墊7,在相向的研磨墊7之間配置被研磨物3。 First, as shown in FIG. 1, the double-sided polishing apparatus 1 planarizes the surface of the to-be-polished material 3 by the CMP method. The double-sided polishing apparatus 1 includes a pair of polishing platens 5 that rotate about a rotation axis, a polishing pad 7 fixed to the upper surface of the polishing platen 5, and a holder 13 for holding the workpiece 3. The double-side polishing apparatus 1 is provided with polishing pads 7 on the surfaces of the opposing polishing presses 5, and the workpieces 3 are placed between the opposing polishing pads 7.
此種兩面研磨裝置1一邊從未圖示的研磨液供給裝置向研磨墊7的研磨面9的中心附近供給研磨液,一邊使研磨壓盤5繞軸(shaft)15旋轉,並使保持器13繞中心旋轉,藉此使由保持器13保持的被研磨物3的與研磨墊7接觸的面平坦化,研磨壓盤5為金屬製,且具有圓板形狀。研磨壓盤5的一面構成貼附研磨墊7的貼附面,該貼附面實質平坦。一對研磨壓盤5固定於通過其中心的一根軸15上,藉由使該軸15旋轉而繞軸15旋轉。 In the double-side polishing apparatus 1, the polishing liquid is supplied from the polishing liquid supply device (not shown) to the vicinity of the center of the polishing surface 9 of the polishing pad 7, and the polishing platen 5 is rotated about the shaft 15, and the holder 13 is rotated. Rotating around the center, the surface of the workpiece 3 held by the holder 13 in contact with the polishing pad 7 is flattened, and the polishing platen 5 is made of metal and has a disk shape. One side of the polishing platen 5 constitutes an attachment surface to which the polishing pad 7 is attached, and the attachment surface is substantially flat. A pair of grinding platens 5 are fixed to a shaft 15 passing through the center thereof, and are rotated about the shaft 15 by rotating the shaft 15.
保持器13具有比被研磨物3大的直徑,且將例如軟質塑膠製的保持墊貼附於硬的壓盤而構成。在壓盤的外周,形成著與軸15的外周的齒輪嚙合的齒輪,壓盤藉由使軸15旋轉而一邊繞軸15公轉一邊繞壓盤的中心自轉。 The holder 13 has a larger diameter than the workpiece 3, and is configured by attaching a retaining pad made of, for example, a soft plastic to a hard platen. On the outer circumference of the platen, a gear that meshes with a gear of the outer circumference of the shaft 15 is formed, and the platen revolves around the center of the platen while revolving around the shaft 15 by rotating the shaft 15.
研磨墊7為硬質聚胺基甲酸酯(polyurethane)製的墊,該墊藉由例如包含含有聚異氰酸酯(polyisocyanate)基的化合物 的預聚物與硬化劑的反應而硬化並成形的乾式法來製造,內部具有無數個氣泡。該氣泡朝向研磨墊7的研磨面9開孔。而且,研磨墊7成為具有與研磨壓盤5大致相同外徑的圓環形狀。而且,圓環形狀的研磨墊7的一圓環狀面構成研磨面9。而且,研磨墊7相對於研磨壓盤5可裝卸地貼附著。而且,貼附於一對研磨壓盤5的研磨墊7具有相同構成。 The polishing pad 7 is a pad made of a rigid polyurethane, for example, comprising a compound containing a polyisocyanate group. The prepolymer is produced by a dry process in which the prepolymer is hardened and formed by the reaction of a hardener, and has numerous bubbles inside. This bubble is opened toward the polishing surface 9 of the polishing pad 7. Further, the polishing pad 7 has an annular shape having substantially the same outer diameter as that of the polishing platen 5. Further, an annular surface of the annular polishing pad 7 constitutes the polishing surface 9. Further, the polishing pad 7 is detachably attached to the polishing platen 5. Further, the polishing pad 7 attached to the pair of polishing press plates 5 has the same configuration.
圖2是從研磨面側觀察研磨墊的平面圖。在研磨墊7的研磨面9形成著多個環狀槽19。環狀槽19是在從研磨面側觀察研磨墊7時以呈圓環的方式延伸的槽。環狀槽19是在使研磨墊向箭頭A方向或箭頭B方向旋轉時,為了保持研磨液並使其分散而形成。環狀槽19呈正圓的方式延伸,且以其直徑從研磨面9的中央附近到達外周的方式而定位。作為環狀槽19的剖面形狀,可採用V字、矩形、半圓形等公知的任何剖面形狀。 Fig. 2 is a plan view of the polishing pad as viewed from the side of the polishing surface. A plurality of annular grooves 19 are formed in the polishing surface 9 of the polishing pad 7. The annular groove 19 is a groove that extends in a ring shape when the polishing pad 7 is viewed from the polishing surface side. The annular groove 19 is formed to hold and disperse the polishing liquid when the polishing pad is rotated in the direction of the arrow A or the direction of the arrow B. The annular groove 19 extends in a perfect circle and is positioned such that its diameter reaches the outer periphery from the vicinity of the center of the polishing surface 9. As the cross-sectional shape of the annular groove 19, any known cross-sectional shape such as a V shape, a rectangular shape, or a semicircular shape can be employed.
多個環狀槽19分別具有相同的直徑,且以包圍研磨面9的中心的方式配置,在圖2所示的示例中,表示將3個環狀槽19以等角度間隔而配置的研磨墊7。環狀槽19的個數可在3個至16個、較佳為在4個至8個的範圍內適當選擇。這是因為,若環狀槽19的數量過少,則無法使研磨液充分地遍布至研磨面9的整個面,另一方面,若環狀槽19的數量過多,則在研磨面9的中心附近槽的密度會增高,或環狀槽19彼此的交點的數量增加,因而研磨液的流動性下降而容易滯留。而且,較佳為將多個環狀槽19相對於形成研磨面9的圓的某直徑呈線對稱地配置。藉此,可使研 磨面9上的槽的分佈、進而研磨液的分佈更均勻。 Each of the plurality of annular grooves 19 has the same diameter and is disposed to surround the center of the polishing surface 9, and in the example shown in FIG. 2, a polishing pad in which three annular grooves 19 are arranged at equal angular intervals is shown. 7. The number of the annular grooves 19 can be appropriately selected in the range of 3 to 16, preferably 4 to 8. This is because if the number of the annular grooves 19 is too small, the polishing liquid cannot be sufficiently spread over the entire surface of the polishing surface 9. On the other hand, if the number of the annular grooves 19 is too large, it is near the center of the polishing surface 9. The density of the grooves is increased, or the number of intersections between the annular grooves 19 is increased, so that the fluidity of the polishing liquid is lowered to easily stay. Further, it is preferable that the plurality of annular grooves 19 are arranged in line symmetry with respect to a certain diameter of a circle forming the polishing surface 9. In this way, research can be made The distribution of the grooves on the grinding surface 9 and the distribution of the polishing liquid are more uniform.
多個環狀槽19的環的直徑的長度X的尺寸以相對於研磨面9的半徑R及挖空的圓的半徑r的長度而R-r≦X≦R的關係成立的方式來規定。而且,多個環狀槽19的中心定位於與形成研磨面9的圓為同心的圓的圓周上。藉此,自所有環狀槽19的中心至形成圓的研磨面9的中心為止的距離相同,從而能夠規則地配置環狀槽19。而且,環狀槽19的半徑較佳為以鄰接的環狀槽19彼此相切或以2點交叉的方式來設定。使鄰接的環狀槽19彼此相切或以2點交叉,藉此環狀槽19彼此連接而可提高研磨液的流動性。此處,鄰接的環狀槽19彼此相切是指鄰接的環狀槽19的中心線彼此相切或大致相切,藉此環狀槽19彼此連通。 The dimension of the length X of the diameter of the ring of the plurality of annular grooves 19 is defined such that the relationship between the radius R of the polishing surface 9 and the radius r of the hollowed-out circle and the relationship R-r≦X≦R is established. Further, the center of the plurality of annular grooves 19 is positioned on the circumference of a circle concentric with the circle forming the polishing surface 9. Thereby, the distance from the center of all the annular grooves 19 to the center of the rounded polishing surface 9 is the same, and the annular groove 19 can be regularly arranged. Further, the radius of the annular groove 19 is preferably set such that the adjacent annular grooves 19 are tangential to each other or intersect at two points. The adjacent annular grooves 19 are tangential to each other or intersect at two points, whereby the annular grooves 19 are connected to each other to improve the fluidity of the polishing liquid. Here, the adjacent annular grooves 19 are tangential to each other, meaning that the center lines of the adjacent annular grooves 19 are tangential or substantially tangent to each other, whereby the annular grooves 19 communicate with each other.
圖3是圖2的區域III的放大圖。如圖3所示,環狀槽19以與形成圓的研磨面9的圓周相切的方式配置。此處,環狀槽19與形成圓的研磨面9的圓周相切,是指環狀槽19的中心線與研磨面9的圓周相切或大致相切,藉此環狀槽19在研磨墊7的側面朝向研磨墊7的徑方向外側開口。 Fig. 3 is an enlarged view of a region III of Fig. 2. As shown in FIG. 3, the annular groove 19 is arranged to be tangent to the circumference of the polishing surface 9 on which the circle is formed. Here, the annular groove 19 is tangent to the circumference of the grinding surface 9 forming the circle, meaning that the center line of the annular groove 19 is tangent or substantially tangent to the circumference of the polishing surface 9, whereby the annular groove 19 is on the polishing pad. The side surface of the opening 7 is opened toward the outer side in the radial direction of the polishing pad 7.
而且,如圖2所示,藉由使環狀槽19為真圓,而可視作環狀槽19實質由中心角為π的半環狀槽19a及半環狀槽19b構成。半環狀槽19a與半環狀槽19b以通過環狀槽19的研磨面9的半徑為基準呈線對稱地配置。各個半環狀槽19a及半環狀槽19b從研磨面9的中心附近延伸至外周為止,且在研磨墊7的周壁開口。而且,在使研磨墊7向箭頭A方向旋轉時,半環狀槽19a位 於旋轉方向下游側而朝向旋轉方向下游側呈現圓弧,因而具有使研磨液分散的作用,相反,在使研磨墊7向箭頭B方向旋轉時,半環狀槽19a位於旋轉方向上游側而朝向旋轉方向上游側呈現圓弧,因而具有使研磨液回到中心方向的作用。另一方面,在使研磨墊7向箭頭A方向旋轉時,半環狀槽19b位於旋轉方向上游側而朝向旋轉方向上游側呈現圓弧,因而具有使研磨液回到中心方向的作用,相反,在使研磨墊7向箭頭A方向旋轉時,半環狀槽19b位於旋轉方向下游側而朝向旋轉方向下游側呈現圓弧,因而具有使研磨液分散的作用。 Further, as shown in Fig. 2, by making the annular groove 19 a true circle, the annular groove 19 can be regarded as substantially consisting of a semi-annular groove 19a having a central angle of π and a semi-annular groove 19b. The semi-annular groove 19a and the semi-annular groove 19b are arranged in line symmetry with respect to the radius of the polishing surface 9 passing through the annular groove 19. Each of the semi-annular grooves 19a and the semi-annular grooves 19b extends from the vicinity of the center of the polishing surface 9 to the outer periphery, and is opened to the peripheral wall of the polishing pad 7. Further, when the polishing pad 7 is rotated in the direction of the arrow A, the semi-annular groove 19a is positioned. When the arc is formed on the downstream side in the rotational direction and toward the downstream side in the rotational direction, the polishing liquid is dispersed. On the contrary, when the polishing pad 7 is rotated in the direction of the arrow B, the semi-annular groove 19a is located on the upstream side in the rotational direction and is oriented. The upstream side of the rotation direction assumes an arc, and thus has a function of returning the polishing liquid to the center. On the other hand, when the polishing pad 7 is rotated in the direction of the arrow A, the semi-annular groove 19b is located on the upstream side in the rotational direction and presents an arc toward the upstream side in the rotational direction, and thus has a function of returning the polishing liquid to the center direction. When the polishing pad 7 is rotated in the direction of the arrow A, the semi-annular groove 19b is located on the downstream side in the rotational direction and presents an arc toward the downstream side in the rotational direction, and thus has a function of dispersing the polishing liquid.
接下來,對本實施形態的研磨墊7的作用進行詳述。圖4是從研磨面側觀察本實施形態的研磨墊的平面圖。 Next, the action of the polishing pad 7 of the present embodiment will be described in detail. Fig. 4 is a plan view of the polishing pad of the embodiment as seen from the side of the polishing surface.
在對被研磨物3進行研磨時,首先,如圖1所示,在一對研磨壓盤5上分別安裝研磨墊7。然後,使用修整器(dresser)對研磨墊7的表面進行修整,之後在一對研磨壓盤5及研磨墊7之間設定其間插入了保持器13的一對被研磨物3。接下來,一邊向研磨墊7的研磨面9供給研磨液一邊使研磨壓盤5旋轉。 When the workpiece 3 is polished, first, as shown in FIG. 1, the polishing pad 7 is attached to each of the pair of polishing presses 5. Then, the surface of the polishing pad 7 is trimmed using a dresser, and then a pair of workpieces 3 into which the holder 13 is inserted is set between the pair of polishing platens 5 and the polishing pad 7. Next, the polishing platen 5 is rotated while supplying the polishing liquid to the polishing surface 9 of the polishing pad 7.
如圖4所示,若一邊使研磨墊7向箭頭A方向旋轉一邊對被研磨物3進行研磨,則自研磨液供給裝置滴下至研磨面9的中心附近的研磨液藉由離心力而向研磨面9的徑方向擴散。而且,大部分的研磨液流入至環狀槽19內,並在被研磨物3與研磨面9之間流動。流入至環狀槽19內的研磨液流入至朝向旋轉方向下游側呈現圓弧的半環狀槽19a內,且藉由離心力而沿著半環狀槽19a 流向研磨面9的外徑方向。然後,若研磨液到達半環狀槽19a的終端部、即相對於研磨墊7的周壁開口的部分,則一部分研磨液沿研磨面9的徑方向被排出,剩餘的研磨液進入位於旋轉方向上游側的半環狀槽19b內。而且,進入至半環狀槽19b內的研磨液藉由離心力,沿著半環狀槽19b而回到研磨面9的中心方向。如此,藉由在研磨面9形成環狀槽19,而可適度地保持研磨液且適度地將其排出。 As shown in FIG. 4, when the polishing object 3 is polished while rotating the polishing pad 7 in the direction of the arrow A, the polishing liquid dropped from the polishing liquid supply device to the vicinity of the center of the polishing surface 9 is transferred to the polishing surface by centrifugal force. 9 is diffused in the radial direction. Further, most of the polishing liquid flows into the annular groove 19 and flows between the workpiece 3 and the polishing surface 9. The polishing liquid that has flowed into the annular groove 19 flows into the semi-annular groove 19a that is circular toward the downstream side in the rotational direction, and is along the semi-annular groove 19a by centrifugal force. It flows to the outer diameter direction of the polishing surface 9. Then, when the polishing liquid reaches the end portion of the semi-annular groove 19a, that is, the portion that is open to the peripheral wall of the polishing pad 7, a part of the polishing liquid is discharged in the radial direction of the polishing surface 9, and the remaining polishing liquid enters the upstream direction in the rotation direction. Inside the semi-annular groove 19b on the side. Then, the polishing liquid that has entered the semi-annular groove 19b returns to the center direction of the polishing surface 9 along the semi-annular groove 19b by centrifugal force. As described above, by forming the annular groove 19 on the polishing surface 9, the polishing liquid can be appropriately held and appropriately discharged.
而且,若使研磨墊7向箭頭A方向旋轉並繼續進行研磨,則因研磨面9與被研磨物3的摩擦而研磨面9的聚胺基甲酸酯的絨毛21朝向旋轉方向上游側傾倒,從而研磨墊7的研磨面的發泡開孔部堵住而容易發生堵塞。 When the polishing pad 7 is rotated in the direction of the arrow A and polishing is continued, the fluff 21 of the polyurethane 9 of the polishing surface 9 is tilted toward the upstream side in the rotational direction by the friction between the polishing surface 9 and the workpiece 3 . Therefore, the foamed opening portion of the polishing surface of the polishing pad 7 is blocked and clogging is likely to occur.
因此,在進行一定程度的研磨之後,在引起堵塞之前,如圖5所示,將研磨墊7的旋轉方向切換為朝向箭頭B方向的旋轉。 Therefore, after a certain degree of polishing, before the clogging is caused, as shown in FIG. 5, the rotation direction of the polishing pad 7 is switched to the rotation in the direction of the arrow B.
若使研磨墊7向箭頭B方向旋轉,則流入至環狀槽19內的研磨液流入至朝向旋轉方向下游側呈現圓弧的半環狀槽19b內,且沿著半環狀槽19b流向研磨面9的外徑方向。然後,若研磨液到達半環狀槽19b的終端部,則一部分研磨液沿研磨面9的徑方向被排出,剩餘的研磨液進入位於旋轉方向上游側的半環狀槽19a內。然後,進入至半環狀槽19a內的研磨液沿著半環狀槽19a而回到研磨面9的中心方向。 When the polishing pad 7 is rotated in the direction of the arrow B, the polishing liquid that has flowed into the annular groove 19 flows into the semi-annular groove 19b that is circular toward the downstream side in the rotational direction, and flows toward the polishing along the semi-annular groove 19b. The outer diameter direction of the face 9. Then, when the polishing liquid reaches the end portion of the semi-annular groove 19b, a part of the polishing liquid is discharged in the radial direction of the polishing surface 9, and the remaining polishing liquid enters the semi-annular groove 19a located on the upstream side in the rotational direction. Then, the polishing liquid that has entered the semi-annular groove 19a returns to the center direction of the polishing surface 9 along the semi-annular groove 19a.
而且,若使研磨墊7向箭頭B方向旋轉而繼續進行研 磨,則藉由研磨面9與被研磨物3的摩擦而傾倒的絨毛21立起。因此,在切換研磨墊7的旋轉方向時,不再需要進行修整而使絨毛21立起,或者即便進行修整,而只要進行短時間的修整即可。而且,若使研磨墊7繼續向箭頭B方向旋轉,則研磨面9的聚胺基甲酸酯的絨毛21會朝向旋轉方向上游側傾倒。該情況下,在引起堵塞之前,要再次切換研磨墊7的旋轉方向而使研磨墊7向箭頭A方向旋轉。 Further, if the polishing pad 7 is rotated in the direction of the arrow B, the grinding is continued. In the grinding, the pile 21 which is poured by the friction of the polishing surface 9 and the workpiece 3 is raised. Therefore, when the rotation direction of the polishing pad 7 is switched, it is no longer necessary to perform trimming to raise the pile 21, or even if trimming is performed, it is only necessary to perform trimming for a short period of time. When the polishing pad 7 is continuously rotated in the direction of the arrow B, the pile 21 of the polyurethane of the polishing surface 9 is tilted toward the upstream side in the rotational direction. In this case, before the clogging is caused, the rotation direction of the polishing pad 7 is switched again to rotate the polishing pad 7 in the direction of the arrow A.
即便如以上般使研磨墊7向箭頭A方向或箭頭B方向中的任一方向旋轉,亦可不引起堵塞地進行研磨。而且,在研磨墊7的研磨面9,形成著相對於研磨面9的半徑呈線對象的半環狀槽19a及半環狀槽19b,因此不易引起堵塞,結果,可抑制研磨率的降低。而且,研磨墊7具有呈正圓的環狀槽19,因此即便切換旋轉方向,研磨液的保持性能及分散性能亦不會降低。因此,根據本實施形態的研磨墊7,無論向哪一方向旋轉均可保持研磨液的流動性,因而可抑制刮痕的產生。 Even if the polishing pad 7 is rotated in either of the arrow A direction or the arrow B direction as described above, the polishing can be performed without causing clogging. In the polishing surface 9 of the polishing pad 7, the semi-annular groove 19a and the semi-annular groove 19b having a line shape with respect to the radius of the polishing surface 9 are formed, so that clogging is less likely to occur, and as a result, a decrease in the polishing rate can be suppressed. Further, since the polishing pad 7 has the annular groove 19 which is a perfect circle, the maintenance performance and the dispersion performance of the polishing liquid are not lowered even if the rotation direction is switched. Therefore, according to the polishing pad 7 of the present embodiment, the fluidity of the polishing liquid can be maintained regardless of which direction is rotated, and thus the occurrence of scratches can be suppressed.
而且,本實施形態的研磨墊無論向哪一方向旋轉,均可適度地抑制研磨液的排出量,因此可抑制高價的研磨液的消耗。 Further, the polishing pad of the present embodiment can appropriately suppress the discharge amount of the polishing liquid regardless of the direction in which the polishing pad is rotated. Therefore, it is possible to suppress the consumption of the expensive polishing liquid.
其次,對上述實施形態的變形例進行說明。 Next, a modification of the above embodiment will be described.
圖6(a)、圖6(b)及圖7(a)、圖7(b)是從研磨面側觀察變形例的研磨墊的平面圖。另外,為了方便說明,對研磨墊、研磨面及環狀槽附上與上述實施形態的參照符號相同的參照符號。 6(a), 6(b), and 7(a) and 7(b) are plan views of the polishing pad of the modification as seen from the polishing surface side. In addition, for the convenience of description, the same reference numerals as those of the above-described embodiment are attached to the polishing pad, the polishing surface, and the annular groove.
如圖6(a)所示,亦可將3個環狀槽19的直徑設為與研磨面9的直徑相同,且以環狀槽19在研磨面9的中心C處交叉的方式來配置環狀槽19。而且,環狀槽19的數量並不限於3個,亦可如圖6(b)所示,設置4個或4個以上的環狀槽19。上述情況下,環狀槽19的直徑X與形成研磨面9的圓的半徑R之間X≦R的關係成立。 As shown in FIG. 6( a ), the diameter of the three annular grooves 19 may be the same as the diameter of the polishing surface 9 , and the annular groove 19 may be disposed so as to intersect the center C of the polishing surface 9 . Shaped groove 19. Further, the number of the annular grooves 19 is not limited to three, and four or four or more annular grooves 19 may be provided as shown in Fig. 6(b). In the above case, the relationship between the diameter X of the annular groove 19 and the radius R of the circle forming the polishing surface 9 is established.
而且,如圖7(a)所示,可將多個環狀槽19以與研磨面9的內周及外周相切的方式來定位。該情況下,所有環狀槽19以1個部位在研磨面9的中心C方向上開口,且以1個部位在研磨面9的徑方向上開口。而且,如圖7(b)所示,亦可以所有環狀槽19的一端在研磨面9的中心C處重疊的方式進行定位,然後將中心附近挖空而形成研磨墊7。該情況下,所有環狀槽19以2個部位在研磨面9的中心C方向上開口,且以1個部位在研磨面9的徑方向上開口。上述情況下,形成研磨面9的圓的半徑R與環狀槽19的直徑X、挖空的中心部的圓的半徑r之間,R-r≦X≦R的關係亦成立。 Further, as shown in FIG. 7(a), the plurality of annular grooves 19 can be positioned to be tangent to the inner circumference and the outer circumference of the polishing surface 9. In this case, all of the annular grooves 19 are opened in the center C direction of the polishing surface 9 at one position, and are opened in the radial direction of the polishing surface 9 at one position. Further, as shown in FIG. 7(b), one end of all the annular grooves 19 may be positioned so as to overlap at the center C of the polishing surface 9, and then the vicinity of the center may be hollowed out to form the polishing pad 7. In this case, all of the annular grooves 19 are opened in the center C direction of the polishing surface 9 at two locations, and are opened in the radial direction of the polishing surface 9 at one location. In the above case, the relationship between R-r≦X≦R is also established between the radius R of the circle forming the polishing surface 9 and the diameter X of the annular groove 19 and the radius r of the circle at the center portion of the hollowed out portion.
另外,本發明並不限於上述實施形態及其變形例,上述實施形態及其變形例的各構成可適當地進行變更。 In addition, the present invention is not limited to the above-described embodiment and its modifications, and the respective configurations of the above-described embodiments and their modifications can be appropriately changed.
尤其,環狀槽的數量可適當選擇,例如可在圖7(a)、圖7(b)所示的圓環狀的研磨墊7中設置3個槽,亦可對圖2、圖6(a)、圖6(b)等所示的圓板的研磨墊設置8個槽。 In particular, the number of annular grooves can be appropriately selected. For example, three grooves can be provided in the annular polishing pad 7 shown in Figs. 7(a) and 7(b), and can also be applied to Figs. 2 and 6 ( a) The polishing pad of the circular plate shown in Fig. 6(b) or the like is provided with eight grooves.
而且,上述實施形態中,列舉了將研磨墊適用於兩面研 磨裝置的示例並進行了詳細說明,但本發明的研磨墊亦可適用於單面研磨裝置。 Further, in the above embodiment, the polishing pad is applied to the two-sided grinding. An example of a grinding apparatus is described in detail, but the polishing pad of the present invention can also be applied to a single-sided polishing apparatus.
以下,對本發明的實施例及比較例進行詳述。 Hereinafter, examples and comparative examples of the present invention will be described in detail.
實施例及比較例中,準備表1所示的研磨墊,使用準備好的研磨墊對矽晶圓的表面進行研磨。 In the examples and comparative examples, the polishing pads shown in Table 1 were prepared, and the surface of the silicon wafer was polished using the prepared polishing pad.
作為研磨裝置,使用不二越機械工業公司製造的兩面研磨裝置,作為研磨液,使用富士美(FUJIMI INCORPORATED)股份有限公司的矽酸膠型(colloidal silica type)。 As a polishing apparatus, a double-sided polishing apparatus manufactured by Fujitsu Machinery Co., Ltd. was used, and as a polishing liquid, a colloidal silica type of FUJIMI INCORPORATED Co., Ltd. was used.
在研磨時,將研磨壓設定為150g/cm2而藉由保持壓盤將直徑300mm的矽晶圓抵壓至研磨墊,一邊使矽晶圓向一個方向自轉,一邊使研磨墊繞中心自轉。在研磨時,藉由修整器修整研磨墊的表面後,使研磨墊向矽晶圓的旋轉方向的反方向(以下稱作「反旋轉方向」)旋轉,而依次研磨1批次(batch)(5塊矽晶圓),不進行修整而切換研磨墊的旋轉方向,使研磨墊一邊向矽晶圓的旋轉方向的相同方向(以下稱作「正旋轉方向」)旋轉,一邊研磨下一批次。然後,針對各研磨墊進行總計為10批次的矽晶圓的研磨。 At the time of polishing, the polishing pressure was set to 150 g/cm 2 , and the crucible wafer having a diameter of 300 mm was pressed against the polishing pad while holding the platen, and the polishing pad was rotated in one direction while rotating the polishing pad around the center. At the time of polishing, the surface of the polishing pad is trimmed by a dresser, and then the polishing pad is rotated in the opposite direction to the rotation direction of the silicon wafer (hereinafter referred to as "reverse rotation direction"), and one batch is sequentially polished ( 5 矽 wafers), the rotation direction of the polishing pad is switched without trimming, and the polishing pad is rotated in the same direction (hereinafter referred to as "positive rotation direction") of the 矽 wafer, while grinding the next batch . Then, polishing of a total of 10 batches of tantalum wafer was performed for each polishing pad.
接下來,對實施例及比較例1至比較例3的所有研磨墊,在相同條件下研磨矽晶圓,使用黑田精工公司製造的Nanometoro300TT-A測定矽晶圓的厚度,並算出研磨率。 Next, the tantalum wafer was polished under the same conditions for all the polishing pads of the examples and the comparative examples 1 to 3, and the thickness of the germanium wafer was measured using Nanometoro 300TT-A manufactured by Kuroda Seiko Co., Ltd., and the polishing rate was calculated.
圖8表示實施例及比較例1至比較例3的研磨墊的研磨率的變化,圖9表示研磨率的平均值及其標準偏差。 Fig. 8 shows changes in the polishing rates of the polishing pads of the examples and Comparative Examples 1 to 3, and Fig. 9 shows the average value of the polishing rates and the standard deviation thereof.
如圖8所示,就實施例的研磨墊的研磨率而言,即便向反旋轉方向及正旋轉方向這兩個方向交替地旋轉,亦幾乎不會產生研磨率的變化。與此相對,比較例1至比較例3的研磨墊在每次切換旋轉方向時研磨率均劇烈變化。 As shown in FIG. 8, in the polishing rate of the polishing pad of the embodiment, even if the two directions of the reverse rotation direction and the positive rotation direction are alternately rotated, the polishing rate is hardly changed. On the other hand, in the polishing pads of Comparative Examples 1 to 3, the polishing rate was drastically changed every time the rotation direction was switched.
而且,實施例的研磨墊的研磨率的標準偏差低於比較例 1至比較例3的研磨率的標準偏差。因此可知,實施例的研磨墊的研磨率的變化小於比較例1至比較例3的研磨墊的研磨率的變化。 Moreover, the standard deviation of the polishing rate of the polishing pad of the example is lower than that of the comparative example 1 to the standard deviation of the polishing rate of Comparative Example 3. Therefore, it is understood that the change in the polishing rate of the polishing pad of the example is smaller than the change in the polishing rate of the polishing pads of Comparative Examples 1 to 3.
7‧‧‧研磨墊 7‧‧‧ polishing pad
9‧‧‧研磨面 9‧‧‧Grinding surface
19‧‧‧環狀槽 19‧‧‧ annular groove
19a、19b‧‧‧半環狀槽 19a, 19b‧‧‧ semi-annular groove
A、B‧‧‧箭頭 A, B‧‧ arrows
r‧‧‧挖空的中心部的圓的半徑 r‧‧‧The radius of the circle at the center of the hollowed out
R‧‧‧形成研磨面的圓的半徑 R‧‧‧The radius of the circle forming the abrasive surface
X‧‧‧環狀槽的直徑 X‧‧‧ diameter of the annular groove
Claims (6)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013071895A JP5892389B2 (en) | 2013-03-29 | 2013-03-29 | Polishing pad and polishing method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201446415A true TW201446415A (en) | 2014-12-16 |
Family
ID=51623820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103111358A TW201446415A (en) | 2013-03-29 | 2014-03-27 | Polishing pad and polishing method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5892389B2 (en) |
TW (1) | TW201446415A (en) |
WO (1) | WO2014156840A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111526945A (en) * | 2018-01-03 | 2020-08-11 | 尹壬奎 | Grinding type grinder |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4037367A (en) * | 1975-12-22 | 1977-07-26 | Kruse James A | Grinding tool |
JP3612599B2 (en) * | 1994-09-01 | 2005-01-19 | 株式会社ルネサステクノロジ | Polishing method and apparatus |
JP2002200555A (en) * | 2000-12-28 | 2002-07-16 | Ebara Corp | Polishing tool and polishing device with polishing tool |
US7377840B2 (en) * | 2004-07-21 | 2008-05-27 | Neopad Technologies Corporation | Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs |
JP2008168430A (en) * | 2008-01-21 | 2008-07-24 | Nitta Haas Inc | Polishing member |
-
2013
- 2013-03-29 JP JP2013071895A patent/JP5892389B2/en active Active
-
2014
- 2014-03-18 WO PCT/JP2014/057349 patent/WO2014156840A1/en active Application Filing
- 2014-03-27 TW TW103111358A patent/TW201446415A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111526945A (en) * | 2018-01-03 | 2020-08-11 | 尹壬奎 | Grinding type grinder |
Also Published As
Publication number | Publication date |
---|---|
WO2014156840A1 (en) | 2014-10-02 |
JP2014195838A (en) | 2014-10-16 |
JP5892389B2 (en) | 2016-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100190418A1 (en) | Lapping plate-conditioning grindstone segment, lapping plate-conditioning lapping machine, and method for conditioning lapping plate | |
JP5516051B2 (en) | Polishing apparatus using polishing pad and glass plate manufacturing method | |
JP2005262341A (en) | Cmp pad conditioner | |
JP2009285768A (en) | Method and device for grinding semiconductor wafer | |
JP2009289925A (en) | Method of grinding semiconductor wafers, grinding surface plate, and grinding device | |
WO2013121718A1 (en) | Method for polishing both surfaces of wafer | |
CN112959212B (en) | Chemical mechanical polishing pad with optimized grooves and application thereof | |
US11453098B2 (en) | Carrier for double-side polishing apparatus, double-side polishing apparatus, and double-side polishing method | |
WO2015025469A1 (en) | Two-side polishing method for wafer | |
KR101079468B1 (en) | Carrier for double side polishing apparatus and double side polishing method using the same | |
CN101116953A (en) | Chemical mechanism grinding and finishing device | |
JP5507799B2 (en) | Semiconductor wafer polishing apparatus and polishing method | |
TW201446415A (en) | Polishing pad and polishing method | |
US8662961B2 (en) | Polishing pad seasoning method, seasoning plate, and semiconductor polishing device | |
CN110312592A (en) | The method and apparatus for carrying out finishing for the edge to sheet glass | |
JP2006218577A (en) | Dresser for polishing cloth | |
JP6283940B2 (en) | Polishing pad | |
JP4982037B2 (en) | Dressing plate for polishing cloth, dressing method for polishing cloth, and polishing method for workpiece | |
KR100899637B1 (en) | Wafer doubleside polishing device | |
CN207724098U (en) | Snap ring structure part and chemical mechanical polishing device | |
TWI679083B (en) | Polishing pad | |
JP7509092B2 (en) | DRESSING PLATE AND DRESSING METHOD | |
JP6330735B2 (en) | Wafer double-side polishing method | |
CN217194678U (en) | Disc repairing device | |
KR20230149738A (en) | Double-sided polisging method for wafer |