TW201446120A - Heat-dissipation mechanism for an electronic device - Google Patents

Abstract

A heat-dissipation mechanism for an electronic device includes a base board, an electronic element, and an EMI shielding cover. The electronic element is disposed on the base board. The EMI shielding cover is disposed on the base board and covers the electronic element. The EMI shielding cover includes a memory-alloy conduction portion having at least one through hole and detachably abutting the electronic element. When a temperature of the memory-alloy conduction portion is less than a memory temperature, the memory-alloy conduction portion abuts the electronic element. When the temperature of the memory-alloy conduction portion exceeds the memory temperature, the memory-alloy conduction portion deforms to separate from the electronic element and heat generated by the electronic element is dissipated to the exterior of the EMI shielding cover via the through hole of the memory-alloy conduction portion.

Description

Heat dissipation mechanism of electronic device

The present invention relates to a heat dissipating mechanism for an electronic device, and more particularly to a heat dissipating mechanism that uses a memory alloy to achieve a rapid heat dissipating effect.

In general, because handheld electronic products (such as mobile phones) are becoming thinner and lighter, and product performance requirements are increasing, the operating temperature inside handheld electronic products will also become higher and higher. Therefore, it has become increasingly important to solve the problem of heat dissipation for handheld electronic products.

At the same time, in order to overcome the problem of electronic interference (EMI), metal masks are currently used in handheld electronic products to cover electronic components (eg, central processing units, etc.). However, this practice causes the electronic components that are heated to smolder in the metal mask, which may worsen the heat dissipation, which may cause problems such as a crash or a malfunction of the handheld electronic product.

The present invention basically employs the features detailed below in order to solve the above problems. That is, the present invention includes a substrate; an electronic component disposed on the substrate; and an anti-electromagnetic interference mask disposed on the substrate and covering the electronic component, wherein the electromagnetic interference shielding The cover has a memory alloy conducting portion, and the memory alloy conducting portion has at least one through hole and is detachably abutted to the electronic component when the memory alloy conducting portion When the temperature system is lower than a memory temperature, the memory alloy conducting portion abuts against the electronic component, and when the temperature of the memory alloy conducting portion is higher than the memory temperature, the memory alloy conducting portion is deformed and separated The electronic component and the heat generated by the operation of the electronic component are transmitted to the electromagnetic interference shielding via the through hole of the memory alloy conducting portion.

Meanwhile, the heat dissipation mechanism of the electronic device according to the present invention, the resistance Having at least one gap between the electromagnetic interference mask and the substrate, and when the memory alloy conductive portion is deformed and separated from the electronic component, the heat generated by the operation of the electronic component is through the through hole of the memory alloy conducting portion and This gap is transmitted outside the anti-electromagnetic interference mask.

In still another aspect of the invention, the substrate includes a circuit board.

Further, in the present invention, the memory alloy conducting portion is composed of a nickel-titanium alloy, an iron-based alloy or a copper-based alloy.

The above described objects, features and advantages of the present invention will become more apparent from the description of the appended claims.

100‧‧‧The heat dissipation mechanism of the electronic device

110‧‧‧Substrate

120‧‧‧Electronic components

130‧‧‧Anti-electromagnetic interference mask

131‧‧‧Memory Alloy Conduction

131a‧‧‧through hole

M‧‧‧Electronic device

G‧‧‧ gap

1 is a partial perspective view showing an electronic device of a heat dissipation mechanism of an electronic device to which the present invention is applied; FIG. 2A is a schematic cross-sectional view showing a heat dissipation mechanism of the electronic device according to FIG. 1 in an operational state; and 2B The figure shows a schematic cross-sectional view of the heat dissipation mechanism of the electronic device according to Fig. 1 in another operational state.

The preferred embodiment of the invention is described in conjunction with the drawings.

The foregoing and other technical contents, features and work related to the present invention The details will be apparent from the following detailed description of the preferred embodiments of the drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only directions referring to the additional drawings. Therefore, the directional terminology used is for the purpose of illustration and not limitation.

Please refer to FIG. 1 , the heat dissipation mechanism of the electronic device of this embodiment. 100 may be applied to an electronic device M (eg, a mobile phone, a tablet, etc.). Here, for simplicity of explanation, one of the upper covers of the electronic device M is not displayed.

As shown in Figure 1, Figure 2A and Figure 2B, the heat dissipation of the electronic device The mechanism 100 mainly includes a substrate 110, an electronic component 120, and an anti-electromagnetic interference mask 130.

In this embodiment, the substrate 110 may be one of the electronic devices M. A circuit board or a motherboard.

As shown in FIGS. 2A and 2B, the electronic component 120 is disposed on the base. Above the board 110. Here, the electronic component 120 can be a central processing unit or the like.

The anti-electromagnetic interference mask 130 is disposed on the substrate 110, and The EMI shield 130 is wrapped around the electronic component 120. Here, the anti-electromagnetic interference mask 130 has a memory alloy conducting portion 131. In particular, the memory alloy conducting portion 131 has a through hole 131a, and the memory alloy conducting portion 131 is detachably abutted against the electronic component 120 (upper surface). In the present embodiment, the memory alloy conducting portion 131 may be composed of a nickel-titanium alloy, an iron-based alloy or a copper-based alloy. In addition, as shown in FIG. 1, the anti-electromagnetic interference mask 130 and the substrate 110 are There are still a plurality of gaps G between them.

As described above, due to the anti-electromagnetic interference mask 130 memory alloy transmission As the name suggests, the guide 131 is made of a memory alloy. Therefore, the characteristics of the memory alloy will be briefly described below.

A memory alloy is a functional metal material (for example, nickel-titanium) Gold, iron-based alloy or copper-based alloy), which can restore its original shape under certain conditions. In other words, the memory alloy has a memory capacity for the shape. Even if the shape of the memory alloy is changed 5 million times in a repeated manner, it can be restored to its original state under a certain temperature condition, and the ordinary metal does not have such a characteristic. In general, when the memory alloy is heated to a phase transition temperature, it will change from the "Matian bulk structure" to the "Worth field structure", thereby restoring the original shape. In other words, the memory alloy has a memory capacity at the phase transition temperature, and this phase transition temperature is referred to as a memory temperature.

Next, the operation mode of the heat dissipation mechanism 100 of the electronic device will be described.

First, as shown in Figure 2A, when the anti-electromagnetic interference mask 130 When the temperature of one of the alloy conducting portions 131 is lower than a memory temperature (for example, 40 degrees Celsius), the memory alloy conducting portion 131 is formed to abut against the electronic component 120 (upper surface) in a recessed manner. At this time, the heat generated by the operation of the electronic component 120 can be directly and quickly conducted into the memory alloy conducting portion 131.

Next, as shown in FIG. 2B, when the memory alloy conducting portion 131 is connected When the heat of the electronic component 120 is received and the temperature of the electronic component 120 is higher than the memory temperature, the memory alloy conducting portion 131 is deformed and protruded upward to be separated from the electronic component 120. At this time, the heat generated by the operation of the electronic component 120 can pass through the through hole 131a of the memory alloy conducting portion 131 and/or the anti-electromagnetic interference mask 130 and the substrate 110. The gap G between them is transmitted outside the electromagnetic interference resistant mask 130.

Then, when the temperature of the memory alloy conducting portion 131 is lowered again to the When the temperature is below the temperature, the memory alloy conducting portion 131 returns to deformation and abuts against the electronic component 120 (upper surface) again. As described above, by the reciprocating motion of the recess/projection of the memory alloy conducting portion 131, the air can circulate inside and outside the EMI shield 130, thereby achieving the electronic component 120 or even the entire electronic device M. Fast heat dissipation.

Although the present invention has been disclosed in its preferred embodiments, it is not intended to limit the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧The heat dissipation mechanism of the electronic device

110‧‧‧Substrate

120‧‧‧Electronic components

130‧‧‧Anti-electromagnetic interference mask

131‧‧‧Memory Alloy Conduction

131a‧‧‧through hole

M‧‧‧Electronic device

Claims (6)

A heat dissipation mechanism for an electronic device, comprising: a substrate; an electronic component disposed on the substrate; and an anti-electromagnetic interference mask disposed on the substrate and covering the electronic component, wherein the electromagnetic component is The interference mask has a memory alloy conducting portion, and the memory alloy conducting portion has at least one through hole and is detachably abutted to the electronic component; wherein, when one of the memory alloy conducting portions has a temperature lower than one The memory alloy conducting portion is in contact with the electronic component at a memory temperature; wherein, when the temperature of the memory alloy conducting portion is higher than the memory temperature, the memory alloy conducting portion is deformed and separated from the electronic component, and The heat generated by the operation of the electronic component is transmitted to the outside of the anti-electromagnetic interference mask via the through hole of the memory alloy conducting portion. The heat dissipation mechanism of the electronic device of claim 1, wherein the EMI shield has at least one gap between the EMI shield and the substrate, and when the memory alloy conductive portion is deformed and separated from the electronic component, The heat generated by the operation of the electronic component is transmitted to the through-hole of the memory alloy conducting portion and the gap to the outside of the anti-electromagnetic interference mask. The heat dissipation mechanism of the electronic device of claim 1, wherein the substrate comprises a circuit board. The heat dissipating mechanism of the electronic device according to claim 1, wherein the memory alloy conducting portion is made of a nickel-titanium alloy. The heat dissipation mechanism of the electronic device according to claim 1, wherein The memory alloy conducting portion is composed of an iron-based alloy. The heat dissipation mechanism of the electronic device according to claim 1, wherein the memory alloy conduction portion is made of a copper-based alloy.