TW201441603A - Assembly and method for testing and classifying LED wafers - Google Patents

Assembly and method for testing and classifying LED wafers Download PDF

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Publication number
TW201441603A
TW201441603A TW103111591A TW103111591A TW201441603A TW 201441603 A TW201441603 A TW 201441603A TW 103111591 A TW103111591 A TW 103111591A TW 103111591 A TW103111591 A TW 103111591A TW 201441603 A TW201441603 A TW 201441603A
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detection
area
led wafers
assembly
led
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TW103111591A
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TWI507677B (en
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Cheng-Tao Tsai
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Cheng Mei Instr Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67271Sorting devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

A assembly and method for testing and classifying LED wafers is disclosed. The assembly includes a plurality of cassettes, an optical detection device, a first transferring unit and a second transferring unit. The cassettes, where the LED wafers settle in, are disposed in an untested region or a tested region. The optical detection device is disposed between the untested region and the tested region for examining the LED wafers. The first transfer unit moves the LED wafer from the untested region to the optical detection device, and the second transfer unit moves the LED wafer from the optical detection device to the tested region.

Description

檢測及分類LED晶圓的檢測總成及方法Detection assembly and method for detecting and classifying LED wafers 【0001】【0001】

本發明係關於一種檢測LED晶圓的檢測總成及方法,特別指一種可以快速檢測並分類複數LED晶圓的檢測總成及方法。The invention relates to a detection assembly and a method for detecting an LED wafer, in particular to a detection assembly and a method for quickly detecting and classifying a plurality of LED wafers.

【0002】【0002】

隨著節能省電意識的興起,以及3C產品薄型化、輕量化的需求,將LED(發光二極體)做為光源來取代傳統燈泡,以降低功耗並提升發光效率,已經是不可避免的趨勢。也因此,對於製作LED基材-LED晶圓的良率要求也越趨嚴格。With the rise of energy-saving and power-saving awareness, and the need for 3C products to be thinner and lighter, it is inevitable to use LEDs (light-emitting diodes) as light sources instead of traditional light bulbs to reduce power consumption and improve luminous efficiency. trend. As a result, the yield requirements for LED substrate-LED wafers have become stricter.

【0003】[0003]

在分割LED晶圓上的晶片單位(die)以進行後續的封裝作業之前,為了降低封裝缺陷並提升整體良率,一般會先針對晶圓上的晶片單位進行良率檢測,再接續後續的封裝作業。In order to reduce package defects and improve overall yield before splitting the die on the LED wafer for subsequent packaging operations, yield detection is typically performed on the wafer units on the wafer, followed by subsequent packaging. operation.

【0004】[0004]

於習知的檢測作業中,多是先採用人工操作的方式將晶圓載入光學檢測儀器後,再同樣以人工的方式檢視光學檢測儀器上之晶圓內的晶片單元。因此,由於此種方式皆是依據人工的方式判別並紀錄晶圓上的缺陷,故具有較慢的檢測速度。In the conventional testing operation, the wafer is loaded into the optical detecting instrument by manual operation, and the wafer unit in the wafer on the optical detecting instrument is also manually viewed. Therefore, since this method discriminates and records defects on the wafer in an artificial manner, it has a slow detection speed.

【0005】[0005]

另一方面,考量到成本因素,在進行前述檢測作業時,大多會採用抽樣檢測的方式為之。如此一來,此種檢測方式將具有以下的缺點:其一為人工檢測並無法有效分析晶圓缺陷的形成原因,在缺乏數據化分析的情況下,對於改善製程以提高整體良率的助益其實相當有限;另一方面,以人工方式進行的檢測,難免會因檢測人員身心狀態的不穩定,而出現疏漏現象;再者,人工檢測的效率較為低落,故將提高整體的製造成本。On the other hand, considering the cost factor, in the above-mentioned testing operations, sampling detection is often used. As a result, this type of detection method will have the following disadvantages: one is manual detection and cannot effectively analyze the cause of formation of wafer defects, and in the absence of data analysis, it is beneficial to improve the process to improve the overall yield. In fact, the detection by manual means will inevitably lead to omission due to the instability of the physical and mental state of the tester; in addition, the efficiency of manual detection is relatively low, so the overall manufacturing cost will be increased.

【0006】[0006]

此外,習知的檢測方式大多是將可容許的最高缺陷作為量測基準,故於分類上僅會將量測後的晶圓粗略的分類為良品及不良品,若欲針對這些良品及不良品各自做進一步等級的區隔,則需再次地進行相關檢測,實乃非經濟的做法。In addition, most of the conventional detection methods use the highest allowable defect as the measurement standard. Therefore, only the measured wafers are roughly classified into good products and defective products in terms of classification, and these products and defective products are intended to be classified. It is a non-economic practice to conduct separate tests for each further level of separation.

【0007】【0007】

有鑑於此,如何提高並改善上述缺失,以提供一種可以快速檢測並分類複數LED晶圓的裝置及方法,乃為此業界亟待解決的問題。In view of this, how to improve and improve the above-mentioned defects to provide a device and method for quickly detecting and classifying a plurality of LED wafers is an urgent problem to be solved in the industry.

【0008】[0008]

本發明之一目的在於提供一種LED晶圓的檢測總成及方法,其可用以快速地進行複數LED晶圓的檢測及分類。It is an object of the present invention to provide a LED wafer inspection assembly and method that can be used to quickly detect and classify a plurality of LED wafers.

【0009】【0009】

本發明之另一目的在於提供一種LED晶圓的檢測總成及方法,其可進一步針對被區分為良品及不良品的LED晶圓做進一步等級的篩選及分類。Another object of the present invention is to provide a LED wafer inspection assembly and method that can further screen and classify LED wafers that are classified as good and defective.

【0010】[0010]

為達上述目的,本發明所揭示的一種檢測總成,適可用以檢測及分類複數LED晶圓,該檢測總成包含:複數卡匣、一光學檢測裝置、一第一輸送單元及一第二輸送單元。複數卡匣分別設置於一待測區及一測定區中,用以承載該等LED晶圓。光學檢測裝置係設置於待測區及測定區之間,以檢測該等LED晶圓。第一輸送單元適可自待測區之該等卡匣中移動該等LED晶圓至光學檢測裝置,且第二輸送單元適可自光學檢測裝置移動該等LED晶圓至測定區之該等卡匣中。其中,第一輸送單元將該等LED晶圓自待測區之該等卡匣移動至光學檢測裝置後,光學檢測裝置適可針對該等LED晶圓進行一檢測作業,第二輸送單元接著依據檢測作業所獲得之一檢測數據,將該等LED晶圓移動至測定區之該等卡匣中。To achieve the above objective, a detection assembly disclosed by the present invention is suitable for detecting and classifying a plurality of LED wafers. The detection assembly includes: a plurality of cassettes, an optical detecting device, a first conveying unit, and a second Conveying unit. The plurality of cassettes are respectively disposed in a test area and a measurement area for carrying the LED wafers. The optical detecting device is disposed between the area to be tested and the measuring area to detect the LED wafers. The first transport unit is adapted to move the LED wafers from the cassettes of the test area to the optical detection device, and the second transport unit is adapted to move the LED wafers from the optical detection device to the measurement area. The card is in the middle. Wherein, after the first transport unit moves the LED wafers from the card to the optical detecting device, the optical detecting device is adapted to perform a detecting operation on the LED wafers, and the second conveying unit is further configured according to the One of the detection data obtained by the inspection operation moves the LED wafers into the cassettes of the measurement area.

【0011】[0011]

本發明亦包含一種檢測方法,可搭配上述檢測總成進行檢測,該方法之步驟如下所述。將欲檢測之複數個LED晶圓設置於一待測區後,該等LED晶圓自待測區移動至一光學檢測裝置。將移至光學檢測裝置的該等LED晶圓適可進行一檢測作業,並依據檢測作業所量測之一檢測數據,將該等LED晶圓移動至一測定區。將該等LED晶圓依據不同的檢測數據被置放於測定區內之不同卡匣內,因此可以同時完成篩選及分類檢測的動作。The invention also includes a detection method that can be tested in conjunction with the above-described detection assembly, the steps of which are as follows. After the plurality of LED wafers to be tested are disposed in a to-be-tested area, the LED wafers are moved from the to-be-tested area to an optical detecting device. The LED wafers moved to the optical detecting device are adapted to perform a detecting operation, and the LED wafers are moved to a measurement area according to one of the measured data measured by the detecting operation. The LED wafers are placed in different cassettes in the measurement area according to different detection data, so that the screening and classification detection operations can be completed at the same time.

【0012】[0012]

為了讓上述的目的、技術特徵和優點能夠更為本領域之人士所知悉並應用,下文係以本發明之數個較佳實施例以及附圖進行詳細的說明。The above objects, technical features and advantages will be apparent to those skilled in the art, and the following detailed description of the preferred embodiments of the invention.

10...機台10. . . Machine

100...檢測總成100. . . Testing assembly

200...卡匣200. . . Card

210...待測區210. . . Area to be tested

210a...第一次待測區210a. . . First test area

210b...第二次待測區210b. . . Second test area

220...測定區220. . . Measuring zone

220a...第一次測定區220a. . . First measurement zone

220b...第二次測定區220b. . . Second measurement zone

222...良品區222. . . Good area

224...不良品區224. . . Bad product area

230...檢測區230. . . Detection area

300...光學檢測裝置300. . . Optical detection device

310...檢測平台310. . . Detection platform

312...頂持元件312. . . Holding component

320...吸附總成320. . . Adsorption assembly

322...吸附槽322. . . Adsorption tank

330...影像投射總成330. . . Image projection assembly

340...光學鏡頭340. . . Optical lens

350...運算單元350. . . Arithmetic unit

400...第一輸送單元400. . . First conveying unit

410...第一次手臂410. . . First arm

500...第二輸送單元500. . . Second conveying unit

510...第二次手臂510. . . Second arm

600...卡扣元件600. . . Buckle element

700...LED晶圓700. . . LED wafer

【0013】[0013]

第1圖為用以容置本發明之檢測總成的機台外觀示意圖;
第2圖為本發明之檢測總成裝設於機台上之示意圖;
第3圖為本發明之檢測總成的第一實施例上視圖;
第4圖為本發明之檢測總成的第一實施例側視圖;
第5圖為本發明檢測總成之光學檢測裝置所具有之影像投射總成與複數光學頭之示意圖;
第6圖為本發明檢測總成之檢測平台之示意圖;
第7圖為本發明檢測總成之頂持元件之示意圖
第8圖為本發明檢測總成之吸附總成之示意圖;
第9圖為本發明之檢測總成的第二實施例上視圖;
第10圖為本發明之檢測總成的第三實施例上視圖;及
第11、12圖為本發明檢測及分類複數LED晶圓之步驟方塊圖。
1 is a schematic view showing the appearance of a machine for accommodating the detection assembly of the present invention;
Figure 2 is a schematic view showing the mounting assembly of the present invention mounted on a machine table;
Figure 3 is a top view of the first embodiment of the detection assembly of the present invention;
Figure 4 is a side view showing a first embodiment of the detecting assembly of the present invention;
Figure 5 is a schematic view showing an image projection assembly and a plurality of optical heads of the optical detecting device of the detecting assembly of the present invention;
Figure 6 is a schematic view of the detection platform of the detection assembly of the present invention;
Figure 7 is a schematic view showing the holding member of the detecting assembly of the present invention. Figure 8 is a schematic view showing the adsorption assembly of the detecting assembly of the present invention;
Figure 9 is a top view of a second embodiment of the detection assembly of the present invention;
Figure 10 is a top view of a third embodiment of the detection assembly of the present invention; and Figures 11 and 12 are block diagrams showing the steps of detecting and classifying a plurality of LED wafers of the present invention.

【0014】[0014]

如第1圖所示,其係為用以容置本發明之一檢測總成100之一機台10之外觀示意圖,而第2圖則為本發明之檢測總成100裝設於機台10上之示意圖。As shown in FIG. 1, it is a schematic view for accommodating one machine 10 of one of the detecting assemblies 100 of the present invention, and FIG. 2 is a mounting assembly 100 of the present invention installed on the machine table 10. The schematic on the top.

【0015】[0015]

如第1圖及第2圖所示,機台10係用以容置檢測總成100,使檢測總成100於進行檢測複數LED晶圓700的過程中,可與外界環境隔絕,以避免外物的不當侵入,導致檢測總成100與複數LED晶圓700之損害。As shown in FIG. 1 and FIG. 2, the machine 10 is configured to accommodate the inspection assembly 100, so that the inspection assembly 100 can be isolated from the external environment during the process of detecting the plurality of LED wafers 700 to avoid external Improper intrusion of material results in damage to the inspection assembly 100 and the plurality of LED wafers 700.

【0016】[0016]

請接續參閱第3圖及第4圖,本發明之檢測總成100係用以檢測及分類複數LED晶圓700。檢測總成100包含複數卡匣200、一光學檢測裝置300、一第一輸送單元400及一第二輸送單元500。其中,複數卡匣200分別設置於一待測區210及一測定區220中,用以承載複數LED晶圓700。光學檢測裝置300則係設置於待測區210及測定區220之間的一檢測區230,用以檢測複數LED晶圓700。較佳地,待測區210與測定區220係以光學檢測裝置300為中心,環狀設置於光學檢測裝置300之外側,且第一輸送單元400係設置於待測區210與光學檢測裝置300間,而第二輸送單元500係設置於測定區220與光學檢測裝置500間。Referring to Figures 3 and 4, the test assembly 100 of the present invention is used to detect and classify a plurality of LED wafers 700. The inspection assembly 100 includes a plurality of cassettes 200, an optical detecting device 300, a first conveying unit 400, and a second conveying unit 500. The plurality of cassettes 200 are respectively disposed in a to-be-tested area 210 and a measurement area 220 for carrying a plurality of LED wafers 700. The optical detecting device 300 is disposed in a detecting area 230 between the area to be tested 210 and the measuring area 220 for detecting the plurality of LED wafers 700. Preferably, the area to be tested 210 and the measurement area 220 are centered on the optical detection device 300, and are disposed annularly on the outer side of the optical detection device 300, and the first delivery unit 400 is disposed on the area to be tested 210 and the optical detection device 300. The second transport unit 500 is disposed between the measurement area 220 and the optical detecting device 500.

【0017】[0017]

當欲進行前述LED晶圓700的檢測作業時,第一輸送單元400適可自待測區210之該等卡匣200中移動LED晶圓700至檢測區230之光學檢測裝置300中,且第二輸送單元500適可自檢測區230之光學檢測裝置300中移動檢測完畢之LED晶圓700至測定區220之該等卡匣200中。When the detecting operation of the LED wafer 700 is to be performed, the first transport unit 400 is adapted to move the LED wafer 700 from the card 200 of the test area 210 to the optical detecting device 300 of the detecting area 230, and The second transport unit 500 is adapted to move the detected LED wafer 700 from the optical detection device 300 of the detection zone 230 to the cassettes 200 of the measurement zone 220.

【0018】[0018]

進一步說明,當第一輸送單元400將LED晶圓700自待測區210之該等卡匣200移動至檢測區230之光學檢測裝置300後,光學檢測裝置300適可針對LED晶圓700進行一檢測作業;而後,第二輸送單元500便會依據檢測作業所獲得之一檢測數據,將LED晶圓700自檢測區230之光學檢測裝置300移動至測定區220之該等卡匣200的適當位置中,而完成LED晶圓700的篩選及分類。Further, after the first transport unit 400 moves the LED wafer 700 from the cassette 200 of the test area 210 to the optical detection device 300 of the detection area 230, the optical detection apparatus 300 can perform one for the LED wafer 700. After the detection operation, the second transport unit 500 moves the LED wafer 700 from the optical detecting device 300 of the detecting area 230 to the appropriate position of the cassette 200 of the measuring area 220 according to one of the detection data obtained by the detecting operation. In the middle, the screening and classification of the LED wafer 700 is completed.

【0019】[0019]

於本實施例中,光學檢測裝置300包含一檢測平台310、一吸附總成320、一影像投射總成330、複數光學鏡頭340及一運算單元350。請一併參閱如第5圖所示之本發明檢測總成100之光學檢測裝置300所具有之影像投射總成330與複數光學頭340之示意圖,以及如第6圖所示之本發明檢測總成100之吸附總成320之示意圖。其中,檢測平台310係用以置放待檢測之LED晶圓700;吸附總成320係嵌設於檢測平台310中,以吸附固定LED晶圓700;影像投射總成330適可依序投射複數影像於檢測平台310上之LED晶圓700;最後,複數光學鏡頭340適可接收LED晶圓700所反射之該等影像,使運算單元350可將該等光學鏡頭340所接收之該等影像進行處理及分析,以完成相關檢測作業。In the embodiment, the optical detecting device 300 includes a detecting platform 310, an adsorption assembly 320, an image projection assembly 330, a plurality of optical lenses 340, and an operation unit 350. Please refer to the schematic diagram of the image projection assembly 330 and the complex optical head 340 of the optical detecting device 300 of the detecting assembly 100 of the present invention as shown in FIG. 5, and the total detection of the present invention as shown in FIG. A schematic diagram of the adsorption assembly 320 of 100. The detection platform 310 is configured to place the LED wafer 700 to be inspected; the adsorption assembly 320 is embedded in the detection platform 310 to adsorb and fix the LED wafer 700; and the image projection assembly 330 can sequentially project the plurality The LED wafer 700 is imaged on the detection platform 310. Finally, the plurality of optical lenses 340 are adapted to receive the images reflected by the LED wafer 700, so that the computing unit 350 can perform the images received by the optical lenses 340. Processing and analysis to complete related testing operations.

【0020】[0020]

需理解的是,前述之複數影像可為可見光影像或不可見光影像,其係依據不同的晶圓測試需求進行選擇,且複數光學鏡頭340亦可相應於該可見光影像或不可見光影像,進行挑選。It should be understood that the foregoing plurality of images may be visible light images or invisible light images, which are selected according to different wafer testing requirements, and the plurality of optical lenses 340 may also be selected according to the visible light image or the invisible light image.

【0021】[0021]

詳細而言,於第5圖所示之實施例中,複數光學鏡頭340為二光學鏡頭340,二光學鏡頭340其中之一係正向於LED晶圓700設置,以接收LED晶圓700所反射之該等影像,而二光學鏡頭340其中之另一係偏置於LED晶圓700,且同樣用以接收LED晶圓700所反射之該等影像。如此一來,因LED晶圓700所反射之影像會同時被正向設置之光學鏡頭340與偏置之光學鏡頭340所接收,故有助於提高影像解析的品質。如此一來,經過運算單元350的運算後,便可得出適當的數據資料來判斷檢測結果。In detail, in the embodiment shown in FIG. 5, the plurality of optical lenses 340 are two optical lenses 340, and one of the two optical lenses 340 is disposed toward the LED wafer 700 to receive the reflection of the LED wafer 700. The other of the two optical lenses 340 are biased to the LED wafer 700 and are also used to receive the images reflected by the LED wafer 700. In this way, since the image reflected by the LED wafer 700 is simultaneously received by the optical lens 340 and the offset optical lens 340 which are disposed in the forward direction, it is helpful to improve the quality of image analysis. In this way, after the operation of the arithmetic unit 350, appropriate data data can be obtained to determine the detection result.

【0022】[0022]

承上,於第5圖所示之一較佳實施例中,二光學鏡頭340之偏置角度約為45度,但並不以此做為限制。因此,使用者亦可依據其他需求,增減光學鏡頭340的設置數量,以及複數光學鏡頭340間的偏置角度。In the preferred embodiment shown in FIG. 5, the offset angle of the two optical lenses 340 is about 45 degrees, but is not limited thereto. Therefore, the user can increase or decrease the number of the optical lenses 340 and the offset angle between the plurality of optical lenses 340 according to other requirements.

【0023】[0023]

如第6圖所示,吸附總成320係嵌設於檢測平台310中。且如第7圖所示,檢測平台310可進一步包含複數頂持元件312,使複數頂持元件312係被容置於檢測平台310內部,用以升降地頂持欲置放於檢測平台310上的LED晶圓700。As shown in FIG. 6, the adsorption assembly 320 is embedded in the detection platform 310. As shown in FIG. 7 , the detecting platform 310 can further include a plurality of holding members 312 , so that the plurality of holding members 312 are received inside the detecting platform 310 for lifting and holding on the detecting platform 310 . LED wafer 700.

【0024】[0024]

如此一來,當第一輸送單元400將待測試之LED晶圓700自待測區210輸送至檢測平台310時,複數頂持元件312將會先升起,使第一輸送單元400可輕易地將LED晶圓700置放於複數頂持元件312上,同時使複數頂持元件312可承載LED晶圓700;待第一輸送單元400卸下LED晶圓700並歸位後,複數頂持元件312將下降,使LED晶圓700被置放於檢測平台310上方,並為吸附總成320所吸附固定以進行檢測;最後,於完成相關檢測作業後,LED晶圓700將重新被複數頂持元件312向上頂持,以供第二輸送單元500依據檢測結果,將LED晶圓700輸送至測定區220所具有之一良品區222或一不良品區224。In this way, when the first transport unit 400 transports the LED wafer 700 to be tested from the to-be-tested area 210 to the detection platform 310, the plurality of holding elements 312 will be raised first, so that the first conveying unit 400 can be easily The LED wafer 700 is placed on the plurality of holding members 312 while the plurality of holding members 312 can carry the LED wafer 700; after the first conveying unit 400 removes the LED wafer 700 and homing, the plurality of holding members 312 will be lowered, so that the LED wafer 700 is placed above the detection platform 310, and is adsorbed and fixed for the adsorption assembly 320 for detection; finally, after the relevant detection operation is completed, the LED wafer 700 will be re-multipleed. The component 312 is supported upwardly for the second transport unit 500 to transport the LED wafer 700 to one of the good areas 222 or one defective area 224 of the measurement area 220 according to the detection result.

【0025】[0025]

如第8圖所示,吸附總成320上設置有複數吸附槽322,其可相應於不同LED晶圓700之尺寸(如2吋、4吋、6吋及8吋之LED晶圓700),進行吸附固定的動作。並且,雖然圖式中之部分吸附槽322間具有相互重疊之區域,然該些重複區域係經過精密計算所形成,故複數吸附槽322之設置,可確實地將不同尺寸的LED晶圓700吸附固定於吸附總成320上。As shown in FIG. 8, the adsorption assembly 320 is provided with a plurality of adsorption grooves 322, which can correspond to the size of different LED wafers 700 (eg, 2, 4, 6 and 8 LED wafers 700). Perform the action of adsorption fixation. Moreover, although some of the adsorption grooves 322 in the drawing have overlapping regions, and the repeated regions are formed by precise calculation, the plurality of adsorption grooves 322 can positively adsorb the LED wafers 700 of different sizes. It is fixed to the adsorption assembly 320.

【0026】[0026]

如第8圖所示,於一較佳實施例中,吸附總成320被設置成可用以同時吸附二2吋LED晶圓700或同時吸附二4吋LED晶圓700,也可僅用以吸附單一6吋LED晶圓700或僅用以吸附單一8吋LED晶圓700,但並不以此為限。As shown in FIG. 8, in a preferred embodiment, the adsorption assembly 320 is configured to simultaneously adsorb two or two LED wafers 700 or simultaneously adsorb two or four LED wafers 700, or may be used only for adsorption. A single 6-inch LED wafer 700 or only a single 8-inch LED wafer 700 is not limited thereto.

【0027】[0027]

另一方面,吸附總成320可為一真空吸附裝置,以確保LED晶圓700可被確實地固定於檢測平台310上,但並不以此做為限制。換言之,吸附總成320亦可具有其他態樣,以協助進行LED晶圓700的吸附作業。On the other hand, the adsorption assembly 320 can be a vacuum adsorption device to ensure that the LED wafer 700 can be securely attached to the detection platform 310, but is not limited thereto. In other words, the adsorption assembly 320 can have other aspects to assist in the adsorption operation of the LED wafer 700.

【0028】[0028]

除第3圖及第8圖所示之檢測總成100的第一實施例外,於第9圖所示之檢測總成100的第二實施例中,也可使吸附總成320於每次檢測時,僅用以同時吸附二2吋LED晶圓700或僅用以同時吸附二4吋LED晶圓700。而於第10圖所示之檢測總成100的第三實施例中,則可使吸附總成320於每次檢測時,僅用以吸附單一6吋LED晶圓700或僅用以吸附單一8吋LED晶圓700。Except for the first embodiment of the test assembly 100 shown in FIGS. 3 and 8, in the second embodiment of the test assembly 100 shown in FIG. 9, the adsorption assembly 320 can also be used for each test. It is only used to simultaneously adsorb two or two LED wafers 700 or to simultaneously adsorb two or four LED wafers 700. In the third embodiment of the detection assembly 100 shown in FIG. 10, the adsorption assembly 320 can be used to adsorb only a single 6-inch LED wafer 700 or only to adsorb a single 8 at each detection.吋 LED wafer 700.

【0029】[0029]

於第9圖與第10圖所示之檢測總成100的第二實施例及第三實施例中,其與第8圖所示之檢測總成100的第一實施例的區別在於,第8圖所示的第一實施例可再不更換檢測總成100的情況下,吸附並檢測4種尺寸的LED晶圓700(即2吋、4吋、6吋及8吋之LED晶圓700),而第9圖與第10圖所示之第二實施例及第三實施例,則各僅分別用以吸附並檢測2種尺寸的LED晶圓700(即2吋、4吋LED晶圓700,或6吋、8吋LED晶圓700),以達到降低建置檢測總成100之成本的目的。In the second embodiment and the third embodiment of the detecting assembly 100 shown in FIGS. 9 and 10, the difference from the first embodiment of the detecting assembly 100 shown in FIG. 8 is that the eighth embodiment The first embodiment shown in the figure can adsorb and detect four sizes of LED wafers 700 (ie, 2, 4, 6 and 8 LED wafers 700) without replacing the inspection assembly 100. The second embodiment and the third embodiment shown in FIG. 9 and FIG. 10 are respectively used to adsorb and detect two sizes of LED wafers 700 (ie, 2 吋, 4 吋 LED wafers 700, respectively). Or 6吋, 8吋 LED wafers 700), in order to reduce the cost of building the inspection assembly 100.

【0030】[0030]

另一方面,於本案所揭示之各實施例中,第一輸送單元400及第二輸送單元500係皆為一機械手臂,且該機械手臂各具有二第一次手臂410及二第二次手臂510,以交替地將LED晶圓700自待測區210輸送至檢測區230,及將LED晶圓700自檢測區230輸送至測定區220,從而有效地提升LED晶圓700之檢測速度,避免閒置時間的發生。On the other hand, in the embodiments disclosed in the present disclosure, the first transport unit 400 and the second transport unit 500 are both a robot arm, and each of the robot arms has two first arms 410 and two second arms. 510, to alternately transport the LED wafer 700 from the test area 210 to the detection area 230, and transport the LED wafer 700 from the detection area 230 to the measurement area 220, thereby effectively improving the detection speed of the LED wafer 700, and avoiding The idle time occurs.

【0031】[0031]

本發明之檢測總成100可進一步包含複數卡扣元件600,其係分別設置於待測區210及測定區220中,以固定該等卡匣200。The detection assembly 100 of the present invention may further include a plurality of snap elements 600 disposed in the test area 210 and the measurement area 220 to fix the cassettes 200.

【0032】[0032]

又,為提升批次檢測LED晶圓700之效率,於第2圖所示之實施例中,待測區210可具有一第一次待測區210a及一第二次待測區210b,且第一次待測區210a及第二次待測區210b係具有上下疊置之關係;相似地,測定區具220有一第一次測定區220a及一第二次測定區220b,且第一次測定區220a及第二次測定區220b係具有上下疊置之關係。In addition, in the embodiment shown in FIG. 2, the to-be-tested area 210 may have a first to-be-tested area 210a and a second to-be-tested area 210b, and The first test area 210a and the second test area 210b have a relationship of overlapping one another; similarly, the measurement area 220 has a first measurement area 220a and a second measurement area 220b, and the first time The measurement zone 220a and the second measurement zone 220b have a relationship of being stacked one on top of the other.

【0033】[0033]

如此一來,當設置在上層之第一次待測區210a中的複數LED晶圓700皆完成檢測作業後,第一輸送單元400將可立即地移動至下層,並自下層的第二次待測區210b中,繼續抓取並傳送待測的複數LED晶圓700至檢測區230。此際,作業人員便可趁著第一輸送單元400在抓取下層之第二次待測區210b的LED晶圓700的空檔,將上層不再承載有複數LED晶圓700的空的複數卡匣200移出,重新填充承載有待測LED晶圓700之複數卡匣200,使當下層之LED晶圓700皆完成檢測後,第一輸送單元400可重新移動至上層,繼續抓取並傳送待測的複數LED晶圓700,而供作業人員更換下層的空的複數卡匣200。也就是說,透過此種上下層的設置關係,第一輸送單元400可持續不間斷地於上層第一次待測區210a與下層第二次待測區210b間抓取LED晶圓700,避免光學檢測裝置300處於閒置狀態。In this way, when the plurality of LED wafers 700 disposed in the first test area 210a of the upper layer complete the detecting operation, the first transport unit 400 can immediately move to the lower layer and wait for the second time from the lower layer. In the measurement area 210b, the plurality of LED wafers 700 to be tested are continuously captured and transferred to the detection area 230. At this time, the operator can take the empty space of the LED wafer 700 of the second test area 210b of the lower layer next to the first transport unit 400, and the upper layer no longer carries the empty plural of the plurality of LED wafers 700. The cassette 200 is removed and refilled with the plurality of cassettes 200 carrying the LED wafers 700 to be tested, so that when the underlying LED wafers 700 are all detected, the first transport unit 400 can be moved back to the upper layer to continue to capture and transmit. The plurality of LED wafers 700 to be tested are replaced by an empty plurality of cassettes 200 for the operator. That is to say, through the arrangement relationship of the upper and lower layers, the first transport unit 400 can continuously and continuously capture the LED wafer 700 between the first first test area 210a and the lower second test area 210b. The optical detecting device 300 is in an idle state.

【0034】[0034]

相似地,第二輸送單元500將可依據不同的檢測結果,把檢測完畢的LED晶圓700傳送至第一次測定區220a或第二次測定區220b之複數卡匣200中。Similarly, the second transport unit 500 will transmit the detected LED wafer 700 to the plurality of cassettes 200 of the first measurement zone 220a or the second measurement zone 220b according to different detection results.

【0035】[0035]

藉由前述之設置,平均而言,本發明之檢測總成100每小時將可完成360片LED晶圓700之檢測及篩選作業。With the foregoing arrangement, on average, the detection assembly 100 of the present invention can complete the inspection and screening operations of 360 LED wafers 700 per hour.

【0036】[0036]

如第9圖所示,本發明同時揭露一種檢測及分類複數LED晶圓700之方法,其包含下列步驟:As shown in FIG. 9, the present invention also discloses a method of detecting and classifying a plurality of LED wafers 700, which includes the following steps:

【0037】[0037]

首先,如步驟801所示,將複數LED晶圓700設置於一待測區210中;如步驟802所示,依序將複數LED晶圓700自待測區210移動至一檢測區230;如步驟803所示,對複數LED晶圓700進行一檢測作業;最後,如步驟804所示,依據檢測作業所量測之一檢測數據,將複數LED晶圓700移動至測定區220。First, as shown in step 801, the plurality of LED wafers 700 are disposed in a test area 210; as shown in step 802, the plurality of LED wafers 700 are sequentially moved from the test area 210 to a detection area 230; Step 803, performing a detection operation on the plurality of LED wafers 700. Finally, as shown in step 804, the plurality of LED wafers 700 are moved to the measurement area 220 according to one of the detection data measured by the detection operation.

【0038】[0038]

其中,前述之步驟803更包含下列步驟:Wherein, the foregoing step 803 further includes the following steps:

【0039】[0039]

如步驟803a所示,將LED晶圓700置放於檢測區230之一檢測平台310;如步驟803b所示,將LED晶圓700吸附於檢測平台310上;如步驟803c所示,將複數影像依序投射於LED晶圓700;如步驟803d所示,利用複數光學鏡頭340接收LED晶圓700所反射之該等影像;最後,如步驟803e所示,利用一運算單元350處理及分析該等影像,以完成LED晶圓700的檢測作業。As shown in step 803a, the LED wafer 700 is placed on the detection platform 310 of the detection area 230; as shown in step 803b, the LED wafer 700 is adsorbed on the detection platform 310; as shown in step 803c, the plurality of images are displayed. Projected on the LED wafer 700 in sequence; as shown in step 803d, the plurality of optical lenses 340 are used to receive the images reflected by the LED wafer 700; finally, as shown in step 803e, the processing unit 350 processes and analyzes the images. The image is used to complete the inspection of the LED wafer 700.

【0040】[0040]

綜上所述,藉由本發明之檢測總成100之設置,將得以快速地進行複數LED晶圓700的檢測,並有效地提升LED晶圓700的檢測效率,縮短所需的等待時間。In summary, with the setting of the detection assembly 100 of the present invention, the detection of the plurality of LED wafers 700 can be quickly performed, and the detection efficiency of the LED wafer 700 can be effectively improved, and the required waiting time can be shortened.

【0041】[0041]

另一方面,因完成檢測後之LED晶圓700可依使用者的需求與定義,而進一步被區分為一良品LED晶圓700與一不良品LED晶圓700,故本發明之檢測總成100將可在完成複數LED晶圓700之檢測後,同步依不同需求,進行LED晶圓700之篩選及分類,並被第二輸送單元500傳送至特定的良品區222與不良品區224中,免除後續再進行篩選的時間,進一步提升檢測分類效率。On the other hand, the LED wafer 700 after the completion of the detection can be further divided into a good LED wafer 700 and a defective LED wafer 700 according to the user's needs and definitions, so the detection assembly 100 of the present invention After the detection of the plurality of LED wafers 700 is completed, the LED wafers 700 are screened and classified according to different requirements, and are transmitted by the second transport unit 500 to the specific good product area 222 and the defective product area 224, exempting The subsequent screening time will further improve the efficiency of detection and classification.

【0042】[0042]

上述之實施例僅用來例舉本發明之實施態樣,以及闡釋本發明之技術特徵,並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利保護範圍應以申請專利範圍為準。The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

100...檢測總成100. . . Testing assembly

200...卡匣200. . . Card

210...待測區210. . . Area to be tested

220...測定區220. . . Measuring zone

222...良品區222. . . Good area

224...不良品區224. . . Bad product area

230...檢測區230. . . Detection area

300...光學檢測裝置300. . . Optical detection device

310...檢測平台310. . . Detection platform

312...頂持元件312. . . Holding component

320...吸附總成320. . . Adsorption assembly

330...影像投射總成330. . . Image projection assembly

340...光學鏡頭340. . . Optical lens

350...運算單元350. . . Arithmetic unit

400...第一輸送單元400. . . First conveying unit

500...第二輸送單元500. . . Second conveying unit

600...卡扣元件600. . . Buckle element

700...LED晶圓700. . . LED wafer

Claims (12)

【第1項】[Item 1] 一種檢測總成,用以檢測及分類複數LED晶圓,包含:
  複數卡匣,分別設置於一待測區及一測定區中,用以承載該等LED晶圓; 
  一光學檢測裝置,係設置於該待測區及該測定區之間,以檢測該等LED晶圓;
  一第一輸送單元,適可自該待測區之該等卡匣中移動該等LED晶圓至該光學檢測裝置;以及
  一第二輸送單元,適可自該光學檢測裝置移動該等LED晶圓至該測定區之該等卡匣中; 
  其中,該第一輸送單元將該等LED晶圓自該待測區之該等卡匣移動至該光學檢測裝置後,該光學檢測裝置適可針對該等LED晶圓進行一檢測作業,該第二輸送單元接著依據該檢測作業所獲得之一檢測數據,將該等LED晶圓移動至該測定區之該等卡匣。
A test assembly for detecting and classifying a plurality of LED wafers, comprising:
The plurality of cassettes are respectively disposed in a test area and a measurement area for carrying the LED wafers;
An optical detecting device is disposed between the area to be tested and the measuring area to detect the LED wafers;
a first transport unit adapted to move the LED wafers from the cassettes of the area to be tested to the optical detecting device; and a second transport unit adapted to move the LED crystals from the optical detecting device Rounded into the cassettes of the assay zone;
After the first transport unit moves the LED wafers from the cassettes of the to-be-measured area to the optical detecting device, the optical detecting device can perform a detecting operation on the LED wafers. The second transport unit then moves the LED wafers to the cassettes of the measurement area according to one of the detection data obtained by the detection operation.
【第2項】[Item 2] 如請求項1所述之檢測總成,其中該光學檢測裝置係包含: 
  一檢測平台,用以置放該等LED晶圓;
  一吸附總成,係嵌設於該檢測平台中,以吸附該等LED晶圓;
  一影像投射總成,用以依序投射複數影像於該檢測平台上之該等LED晶圓;
  複數光學鏡頭,適可接收該等LED晶圓所反射之該等影像;以及
  一運算單元,適可將該等光學鏡頭所接收之該影像進行處理及分析,以完成該檢測作業。
The detection assembly of claim 1, wherein the optical detection device comprises:
a detection platform for placing the LED wafers;
An adsorption assembly is embedded in the detection platform to adsorb the LED wafers;
An image projection assembly for sequentially projecting the plurality of images on the LED wafers on the detection platform;
The plurality of optical lenses are adapted to receive the images reflected by the LED wafers; and an arithmetic unit configured to process and analyze the images received by the optical lenses to complete the detecting operation.
【第3項】[Item 3] 如請求項2所述之檢測總成,其中該檢測平台更包含複數頂持元件,用以可升降地頂持該等LED晶圓。The detection assembly of claim 2, wherein the detection platform further comprises a plurality of holding elements for lifting the LED wafers up and down. 【第4項】[Item 4] 如請求項1所述之檢測總成,其中該待測區與該測定區係以該光學檢測裝置為中心,環狀設置於該光學檢測裝置之外側,且該第一輸送單元係設置於該待測區與該光學檢測裝置間,而該第二輸送單元係設置於該測定區與該光學檢測裝置間。The detection assembly of claim 1, wherein the measurement area and the measurement area are centered on the optical detection device, annularly disposed on an outer side of the optical detection device, and the first delivery unit is disposed on the The area to be tested is between the optical detecting device and the second conveying unit is disposed between the measuring area and the optical detecting device. 【第5項】[Item 5] 如請求項1所述之檢測總成,其中該第一輸送單元及該第二輸送單元係皆為一機械手臂。The detecting assembly of claim 1, wherein the first conveying unit and the second conveying unit are both a robot arm. 【第6項】[Item 6] 如請求項5所述之檢測總成,其中該機械手臂各具有二第一次手臂及二第二次手臂。The test assembly of claim 5, wherein the robot arms each have two first arms and two second arms. 【第7項】[Item 7] 如請求項1所述之檢測總成,其中該測定區更包含一良品區及一不良品區。The test assembly of claim 1, wherein the measurement area further comprises a good product area and a defective product area. 【第8項】[Item 8] 如請求項1所述之檢測總成,其中該待測區及該測定區係為上下疊置之雙層區域。The detection assembly of claim 1, wherein the area to be tested and the measurement area are double-layered areas stacked one on another. 【第9項】[Item 9] 如請求項1所述之檢測總成,更包含複數卡扣元件,分別設置於該待測區及該測定區中,以固定該等卡匣。The detection assembly of claim 1 further includes a plurality of snap elements disposed in the test area and the measurement area to fix the cassettes. 【第10項】[Item 10] 如請求項2所述之檢測總成,其中該吸附總成係設置有複數吸附槽,以吸附並固定該等LED晶圓。The detection assembly of claim 2, wherein the adsorption assembly is provided with a plurality of adsorption tanks for adsorbing and fixing the LED wafers. 【第11項】[Item 11] 一種檢測及分類複數LED晶圓之方法,包含下列步驟:
  (a)將該等LED晶圓設置於一待測區;
  (b)將該等LED晶圓自該待測區移動至一檢測區;
  (c)於該檢測區對該等LED晶圓進行一檢測作業;以及
  (d)依據該檢測作業所量測之一檢測數據,將該等LED晶圓自該檢測區移動至一測定區。
A method of detecting and classifying a plurality of LED wafers, comprising the steps of:
(a) placing the LED wafers in a region to be tested;
(b) moving the LED wafers from the area to be tested to a detection area;
(c) performing a detection operation on the LED wafers in the detection area; and (d) moving the LED wafers from the detection area to a measurement area according to one of the detection data measured by the detection operation.
【第12項】[Item 12] 如請求項11所述之方法,其中步驟(c)更包含:
  (c1)將該等LED晶圓置放於該檢測區之一檢測平台;
  (c2)利用該檢測平台吸附該等LED晶圓;
  (c3)將複數影像依序投射於該等LED晶圓之一表面;
  (c4)利用複數光學鏡頭接收該等LED晶圓之該表面所反射之該等影像;及
  (c5)利用一運算單元處理及分析該等影像,以完成該等LED晶圓的檢測作業。
The method of claim 11, wherein the step (c) further comprises:
(c1) placing the LED wafers on one of the detection areas of the detection area;
(c2) adsorbing the LED wafers using the detection platform;
(c3) sequentially projecting the plurality of images onto one surface of the LED wafers;
(c4) receiving, by the plurality of optical lenses, the images reflected by the surface of the LED wafers; and (c5) processing and analyzing the images by an arithmetic unit to complete the detection of the LED wafers.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI769060B (en) * 2020-09-09 2022-06-21 旺矽科技股份有限公司 Macroscopic and microscopic testing equipment and testing methods

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105632979B (en) * 2016-03-16 2017-05-17 温州大学 Device and method for automatically sorting diodes
TWI574798B (en) * 2016-04-22 2017-03-21 All Ring Tech Co Ltd The material box and the material for the storage of the material collection device
CN110906980B (en) * 2019-11-14 2021-10-08 深圳市华星光电半导体显示技术有限公司 Detection system and detection method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US6383890B2 (en) * 1997-12-26 2002-05-07 Canon Kabushiki Kaisha Wafer bonding method, apparatus and vacuum chuck
KR20110054641A (en) * 2009-11-18 2011-05-25 서현테크(주) Inspection and classification equipment for light emitting diode chip
KR101168316B1 (en) * 2009-12-01 2012-07-25 삼성전자주식회사 Apparatus for inspecting light emitting diode
CN101740446A (en) * 2009-12-25 2010-06-16 立晔科技股份有限公司 Wafer transportation and detection machine and wafer transportation and detection method
KR20120015034A (en) * 2010-08-11 2012-02-21 디엔씨엔지니어링 주식회사 The examination and classification equipment for led package
TWI435074B (en) * 2011-06-29 2014-04-21 Mpi Corp Optical inspection device and optical inspection method
TWI579939B (en) * 2011-08-04 2017-04-21 政美應用股份有限公司 Device and method for testing and classifying led wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI769060B (en) * 2020-09-09 2022-06-21 旺矽科技股份有限公司 Macroscopic and microscopic testing equipment and testing methods

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