TW201438320A - Method for making vertical nitride-based light emitting diode - Google Patents

Abstract

The present invention relates to a method for making a vertical nitride-based light emitting diode. It essentially focuses on a buffer layer of AlN, GaN or InN being deposited on a substrate by a spattering technology, and then a semiconductor layer can be directly grown on the buffer layer without advance growth of any undoped conductor layers thereon. As a result, this invention has substantial efficacy in reducing time for epitaxial growth, simplifying the process of manufacture, promoting stability and reliability of components.

Description

Method for manufacturing vertical nitride light emitting diode

The invention relates to a method for manufacturing a vertical nitride light-emitting diode, in particular to a vertical nitride light-emitting diode which can reduce the time of epitaxial growth, reduce the complexity of fabrication and improve the stability of components. The method of manufacturing the body.

According to the group III-V light-emitting diodes, the group III chemical elements and the group V chemical elements are combined, wherein the group III chemical elements are: aluminum (Al), gallium (Ga), indium (In), V group The chemical elements are: nitrogen (N), phosphorus (P), arsenic (As); when a voltage is applied between the two electrodes of the III-V group, electrons and holes can be injected into the active layer. Recombining with each other, and the remaining energy in the recombination is excited and released in the form of light to achieve a luminous effect.

Please refer to the first figure to reveal the manufacturing process of the gallium nitride light-emitting diode vertical component in the conventional III-V light-emitting diode. The buffer layer (12), the undoped semiconductor layer (13), and the n-type are sequentially grown on a temporary substrate (11) by metal organic chemical-vapor deposition (MOCVD). a semiconductor layer (14), an active layer [multilayer quantum well] (15), a p-type semiconductor layer (16), and then a mirror layer (17), a mirror layer (17) on the surface of the p-type semiconductor layer (16) A bonding layer (18A) is formed thereon to form the first semiconductor bulk (A). In addition, another bonding layer (18B) is formed on a permanent substrate (19) to form a second semiconductor bulk (B). Subsequently, the bonding layer (18A) of the first semiconductor bulk material (A) and the bonding layer (18B) of the second semiconductor bulk material (B) are bonded to each other, and the two semiconductor bulk materials are bonded together. Then, a substrate stripping method (such as laser stripping or polishing etching) is used, and a buffer layer (12) is used as the sacrificial layer for separating the semiconductor from the temporary substrate (11), and finally the undoped semiconductor layer is used by dry etching (13). The n-type electrode (10) is removed on the surface of the n-type semiconductor layer (14), and the permanent substrate (19) is used as a p-type electrode.

Since the vertical type III-V light-emitting diode is grown, after the buffer layer is grown, an undoped semiconductor layer having a thickness of several μm is further grown to improve the crystallinity and flatness of the buffer layer. The problem.

However, it is precisely because the conventional growth technology has to grow the undoped semiconductor layer after the growth of the buffer layer, and then the n-type semiconductor layer can be grown, so that the manufacturing process of the III-V group LED is increased, and the complicated process is complicated. The manufacturing process may also further cause problems with poor component stability.

The main object of the present invention is to provide a method for manufacturing a vertical nitride light-emitting diode, which is mainly formed by a film which can be one of a series of materials such as aluminum nitride, indium nitride or gallium nitride. The semiconductor layer is directly grown on the buffer layer without first growing the undoped semiconductor layer and then growing the semiconductor layer, thereby reducing the time for epitaxial growth, and thereby further reducing the complexity of the fabrication of the nitride light-emitting diode. At the same time, the element stability of the vertical nitride light-emitting diode is improved.

The main purpose and effect of the above-described method for manufacturing a vertical nitride light-emitting diode of the present invention are achieved by the following specific technical means:

A method for manufacturing a vertical nitride light emitting diode includes the following steps:

Step 1: preliminarily growing an amorphous buffer layer and a polycrystalline or single crystal buffer layer on the temporary substrate;

Step 2: sequentially growing a first semiconductor layer, an active layer (multilayer quantum well), and a second semiconductor layer by metal organic chemical vapor deposition (MOCVD);

Step 3: forming a mirror layer on the surface of the second semiconductor layer;

Step 4: further forming a bonding layer on the surface of the mirror layer to form a first semiconductor block;

Step 5: forming a bonding layer on a permanent substrate to form a second semiconductor block;

Step 6: performing a bonding process on the bonding layer of the first semiconductor bulk material and the bonding layer of the second semiconductor bulk material, so that the first and second semiconductor blocks are bonded together;

Step 7: separating the temporary substrate by using a substrate stripping method and using the amorphous buffer layer as a sacrificial layer;

Step 8: Finally, a first electrode is formed on the surface of the first semiconductor layer, and the permanent substrate is a second electrode.

The method for producing a vertical nitride light-emitting diode as described above, wherein the substrate peeling method is a laser peeling or a polishing etching peeling method.

The method for manufacturing a vertical nitride light-emitting diode according to the above aspect, wherein the material of the permanent substrate is one selected from the group consisting of a sapphire substrate, a semiconductor substrate, and a metal substrate.

The method for producing a vertical nitride light-emitting diode according to the above aspect, wherein the semiconductor substrate is one of a germanium semiconductor substrate, a tantalum carbide semiconductor substrate, a gallium arsenide semiconductor substrate, or a zinc oxide semiconductor substrate.

The method for manufacturing a vertical nitride light-emitting diode as described above, wherein the technique of growing the amorphous buffer layer and the polycrystalline or single crystal buffer layer on the temporary substrate is a sputtering technique or a unit sublayer One of a deposition system (ALD) or a molecular beam epitaxy system (MBE).

The method for producing a vertical nitride light-emitting diode as described above, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a thickness of several nm to several thousands nm.

The nitride light-emitting diode according to the above aspect, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a growth temperature in the range of 300 ° C to 1000 ° C.

The method for producing a vertical nitride light-emitting diode according to the above aspect, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a growth temperature of one of a fixed temperature or a gradual temperature.

The method for producing a vertical nitride light-emitting diode as described above, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer are alternately stacked one on another.

The method for manufacturing a vertical nitride light-emitting diode as described above, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer are made of a material series such as aluminum nitride, indium nitride or gallium nitride. One of the films is formed.

<present invention>

(2). . . Temporary substrate

(3A). . . Amorphous buffer layer

(3B). . . Polycrystalline or single crystal buffer layer

(4). . . First semiconductor layer

(40). . . First electrode

(5). . . Active layer (multilayer quantum well)

(6). . . Second semiconductor layer

(7). . . Mirror layer

(8A). . . Fit layer

(C). . . First semiconductor block

(9). . . Permanent substrate

(8B). . . Fit layer

(D). . . Second semiconductor block

<existing>

(11). . . Temporary substrate

(12). . . The buffer layer

(13). . . Undoped semiconductor layer

(14). . . N-type semiconductor layer

(15). . . Active layer

(16). . . P-type semiconductor layer

(17). . . Mirror layer

(18A). . . Fit layer

(A). . . First semiconductor block

(19). . . Permanent substrate

(18B). . . Fit layer

(B). . . Second semiconductor block

(10). . . N-type electrode

First: Flow chart of manufacturing steps of existing vertical nitride light-emitting diodes

Second: Flow chart of manufacturing steps of the vertical nitride light-emitting diode of the present invention

For a more complete and clear disclosure of the technical content, the purpose of the invention and the effects thereof achieved by the present invention, it is explained in detail below, and please refer to the drawings and drawings:

Referring to the second figure, it is a flow chart showing the steps of the method for fabricating the vertical nitride light-emitting diode of the present invention. The method for manufacturing a vertical nitride light-emitting diode of the present invention comprises the following steps:

Step 1: Prior to the temporary substrate (2), one of sputtering, OLED or molecular beam epitaxy (MBE) is used, and the growth temperature ranges from 300 ° C to 1000 ° C. Forming an amorphous buffer layer (3A) having a thickness of several nm to several thousand nm and a polycrystalline or single crystal buffer layer (3B); more preferably, the amorphous buffer layer (3A) and the The growth temperature of the polycrystalline or single crystal buffer layer (3B) is one of a fixed temperature or a gradual temperature; further, the amorphous buffer layer (3A) and the polycrystalline or single crystal buffer layer (3B) further interact with each other. Alternating stacking; and the amorphous buffer layer (3A) and the polycrystalline or single crystal buffer layer (3B) are formed of a film of one of a series of materials such as aluminum nitride, indium nitride or gallium nitride;

Step 2: Then, the first semiconductor layer (4), the active layer (multilayer quantum well) (5), and the second semiconductor layer are sequentially grown by metal organic chemical vapor deposition (MOCVD). 6);

Step three: then forming a mirror layer (7) on the surface of the second semiconductor layer (6);

Step 4: further forming a bonding layer (8A) on the surface of the mirror layer (7) to form a first semiconductor bulk (C);

Step 5: forming a bonding layer (8B) on a permanent substrate (9) to form a second semiconductor block (D); the material of the permanent substrate (9) is selected from a sapphire substrate, a semiconductor substrate or a metal substrate. One of the semiconductor substrate is one of a germanium semiconductor substrate, a tantalum carbide semiconductor substrate, a gallium arsenide semiconductor substrate or a zinc oxide semiconductor substrate;

Step 6: bonding the bonding layer (8A) of the first semiconductor bulk material (C) and the bonding layer (8B) of the second semiconductor bulk material (D) to form a first semiconductor bulk material (C), The second semiconductor bulk (D) is bonded together;

Step 7: using a substrate stripping method, for example, a laser stripping or abrading etching stripping method, and separating the temporary substrate (2) with the amorphous buffer layer (3A) as a sacrificial layer;

Step 8: Finally, a first electrode (40) is formed on the surface of the first semiconductor layer (4), and the permanent substrate (9) is used as a second electrode.

The above is only a part of the embodiments of the present invention, and is not intended to limit the present invention. It is intended to be included in the scope of the present invention.

In summary, the embodiments of the present invention can achieve the expected use efficiency, and the specific technical means disclosed therein have not been seen in similar products, nor have they been disclosed before the application, and have completely complied with the patent law. The regulations and requirements, the application for invention patents in accordance with the law, and the application for review, and the grant of patents, are truly sensible.

(2). . . Temporary substrate

(3A). . . Amorphous buffer layer

(3B). . . Polycrystalline or single crystal buffer layer

(4). . . First semiconductor layer

(40). . . First electrode

(5). . . Active layer (multilayer quantum well)

(6). . . Second semiconductor layer

(7). . . Mirror layer

(8A). . . Fit layer

(C). . . First semiconductor block

(9). . . Permanent substrate

(8B). . . Fit layer

(D). . . Second semiconductor block

Claims (10)

A method for manufacturing a vertical nitride light emitting diode includes the following steps:
Step 1: preliminarily growing an amorphous buffer layer and a polycrystalline or single crystal buffer layer on the temporary substrate;
Step 2: sequentially growing the first semiconductor layer, the active layer, and the second semiconductor layer by using an organometallic chemical vapor deposition method;
Step 3: forming a mirror layer on the surface of the second semiconductor layer;
Step 4: forming a bonding layer on the surface of the mirror layer to form a first semiconductor block;
Step 5: forming a bonding layer on a permanent substrate to form a second semiconductor block;
Step 6: performing a bonding process on the bonding layer of the first semiconductor bulk material and the bonding layer of the second semiconductor bulk material, so that the first and second semiconductor blocks are bonded together;
Step 7: separating the temporary substrate by using a substrate stripping method and using the amorphous buffer layer as a sacrificial layer;
Step 8: forming a first electrode on the surface of the first semiconductor layer, the permanent substrate being a second electrode. The method for manufacturing a vertical nitride light-emitting diode according to claim 1, wherein the material of the permanent substrate is one selected from the group consisting of a sapphire substrate, a semiconductor substrate, and a metal substrate. The method for producing a vertical nitride light-emitting diode according to claim 2, wherein the semiconductor substrate is one of a germanium semiconductor substrate, a tantalum carbide semiconductor substrate, a gallium arsenide semiconductor substrate, or a zinc oxide semiconductor substrate. The method for manufacturing a vertical nitride light-emitting diode according to claim 1, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer are deposited on the temporary substrate by using a sputtering technique. One of a unit sublayer deposition system or a molecular beam epitaxy system. The method for producing a vertical nitride light-emitting diode according to claim 1 or 4, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a thickness of several nm to several thousand nm. . The method for producing a vertical nitride light-emitting diode according to claim 5, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a growth temperature in the range of 300 ° C to 1000 ° C. The method for producing a vertical nitride light-emitting diode according to claim 6, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer have a growth temperature of one of a fixed temperature or a gradual temperature. The method for producing a vertical nitride light-emitting diode according to the first aspect of the invention, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer are alternately stacked and grown. The method for producing a vertical nitride light-emitting diode according to the first aspect of the invention, wherein the substrate peeling method is one of a laser peeling and a polishing etching stripping method. The method for manufacturing a vertical nitride light-emitting diode according to claim 1, wherein the amorphous buffer layer and the polycrystalline or single crystal buffer layer are made of aluminum nitride, indium nitride or gallium nitride. It is formed by a film of one of the material series.