TW201425612A - Evaporation apparatus - Google Patents

Evaporation apparatus Download PDF

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Publication number
TW201425612A
TW201425612A TW101150080A TW101150080A TW201425612A TW 201425612 A TW201425612 A TW 201425612A TW 101150080 A TW101150080 A TW 101150080A TW 101150080 A TW101150080 A TW 101150080A TW 201425612 A TW201425612 A TW 201425612A
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Taiwan
Prior art keywords
vapor deposition
temperature measuring
crucible
measuring component
temperature
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TW101150080A
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Chinese (zh)
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TWI477625B (en
Inventor
Yi-Pu Chen
Ya-Ting Wu
Wen-Hao Wu
Yung-Sheng Ting
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Au Optronics Corp
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Priority to TW101150080A priority Critical patent/TWI477625B/en
Priority to JP2013055222A priority patent/JP2014125681A/en
Priority to KR1020130031871A priority patent/KR20140083847A/en
Priority to CN2013101021674A priority patent/CN103276358A/en
Publication of TW201425612A publication Critical patent/TW201425612A/en
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Publication of TWI477625B publication Critical patent/TWI477625B/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An evaporation apparatus includes a heating chamber, a crucible, and at least one temperature measuring unit. The crucible is disposed in the heating chamber and the crucible is used to contain an evaporation material. A measuring end of the temperature measuring unit is disposed in the crucible.

Description

蒸鍍裝置 Vapor deposition device

本發明係關於一種蒸鍍裝置，尤指一種可對蒸鍍材料剩餘量進行監控之蒸鍍裝置。 The present invention relates to an evaporation apparatus, and more particularly to an evaporation apparatus capable of monitoring the remaining amount of an evaporation material.

於半導體、平面顯示器以及太陽能等產業中，蒸鍍製程(evaporation process)係常見應用於成膜方面之技術。蒸鍍製程的原理係將蒸鍍材料放置於坩堝內，再將坩堝放於加熱室當中加熱，使蒸鍍材料受熱而蒸發為氣體狀態，進而利用此氣態之蒸鍍材料成膜於基板上。 In industries such as semiconductors, flat panel displays, and solar energy, evaporation processes are commonly used in film formation. The principle of the vapor deposition process is to place the vapor deposition material in the crucible, and then heat the crucible in the heating chamber to heat the vapor deposition material to a gaseous state, and then use the vapor deposition material to form a film on the substrate.

在有機發光顯示裝置的製程中，亦可利用蒸鍍製程的方式於基板上形成有機發光層。然而，在目前的蒸鍍製程中，坩堝內的有機發光材料剩餘量無法透過坩堝看到，只能利用製程參數的變化以及依據長期資料收集之經驗來做人為判斷，故無法準確定量坩堝中有機發光材料的剩餘量，使得材料補充以及設備進行保養的頻率不易掌控而影響到蒸鍍機台的生產狀況。 In the process of the organic light emitting display device, the organic light emitting layer may be formed on the substrate by a vapor deposition process. However, in the current evaporation process, the remaining amount of the organic light-emitting material in the crucible cannot be seen through the crucible, and only the change of the process parameters and the experience of long-term data collection can be used for human judgment, so that it is impossible to accurately quantify the organic The remaining amount of luminescent materials makes the material replenishment and the frequency of maintenance of the equipment difficult to control and affects the production status of the evaporation machine.

本發明之主要目的之一在於提供一種蒸鍍裝置，利用蒸鍍材料之溫度與放置蒸鍍材料之坩堝內的環境溫度之間的差異以對蒸鍍材 料於坩堝內的剩餘量進行即時監控，達到確實掌控蒸鍍材料剩餘量之目的。 One of the main objects of the present invention is to provide an evaporation apparatus that utilizes the difference between the temperature of the evaporation material and the ambient temperature of the vapor deposition material to the vapor deposition material. The remaining amount in the crucible is monitored on the spot to achieve the purpose of controlling the remaining amount of the vapor deposition material.

為達上述目的，本發明之一較佳實施例提供一種蒸鍍裝置。此蒸鍍裝置包括一加熱室、一坩堝以及至少一溫度量測元件。坩堝係設置於加熱室中，用以盛裝一蒸鍍材料。溫度量測元件之一量測端係設置於坩堝內部。 In order to achieve the above object, a preferred embodiment of the present invention provides an evaporation apparatus. The vapor deposition apparatus includes a heating chamber, a crucible, and at least one temperature measuring component. The lanthanum system is disposed in the heating chamber for containing an evaporation material. One of the measuring end of the temperature measuring element is disposed inside the crucible.

為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明，下文特列舉本發明之較佳實施例，並配合所附圖式，詳細說明本發明的構成內容及所欲達成之功效。 The present invention will be further understood by those of ordinary skill in the art to which the present invention pertains. .

請參考第1圖與第2圖。第1圖繪示本發明之第一較佳實施例之蒸鍍裝置的示意圖。第2圖繪示本實施例之蒸鍍裝置的溫度量測元件示意圖。為了方便說明，本發明之各圖式僅為示意以更容易了解本發明，其詳細的比例可依照設計的需求進行調整。如第1圖與第2圖所示，本實施例提供之蒸鍍裝置100包括加熱室110、坩堝120以及至少一溫度量測元件140。本實施例之蒸鍍裝置100包括複數個溫度量測元件140，但本發明並不以此為限而於本發明之其他較佳實施例中亦可僅設置單一個溫度量測元件140。坩堝120係設置於加熱室110中，用以盛裝蒸鍍材料130。各溫度量測元件140之量測端140M係設置於坩堝120內部，用以量測蒸鍍材料130之 溫度或坩堝120內的環境溫度，以監控蒸鍍材料130位於坩堝120內的容量。加熱室110可包括主體110A以及外蓋110B，外蓋110B係設置於主體110A上，且外蓋110B具有至少一噴嘴111，用以逸出被汽化之蒸鍍材料130A。本實施例之加熱室110可為一圓柱狀加熱室，但本發明並不以此為限，而在本發明之其他較佳實施例中亦可視需要使用其他適合形狀例如箱形或六面體之加熱室。在本實施例中，蒸鍍裝置100可更包括加熱器150，用以對蒸鍍材料130進行加熱。在本實施例中，加熱器150可設置於加熱室110之外側，但不以此為限。例如，在變化實施例中，加熱器150亦可設置於加熱室110之內部。 Please refer to Figure 1 and Figure 2. Fig. 1 is a schematic view showing a vapor deposition apparatus according to a first preferred embodiment of the present invention. FIG. 2 is a schematic view showing the temperature measuring element of the vapor deposition device of the embodiment. For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements. As shown in FIG. 1 and FIG. 2, the vapor deposition apparatus 100 provided in this embodiment includes a heating chamber 110, a crucible 120, and at least one temperature measuring component 140. The vapor deposition device 100 of the present embodiment includes a plurality of temperature measuring components 140. However, the present invention is not limited thereto, and only a single temperature measuring component 140 may be disposed in other preferred embodiments of the present invention. The crucible 120 is disposed in the heating chamber 110 for containing the vapor deposition material 130. The measuring end 140M of each temperature measuring component 140 is disposed inside the crucible 120 for measuring the evaporation material 130 The temperature or ambient temperature within the crucible 120 is used to monitor the capacity of the vapor deposition material 130 within the crucible 120. The heating chamber 110 may include a main body 110A and an outer cover 110B. The outer cover 110B is disposed on the main body 110A, and the outer cover 110B has at least one nozzle 111 for escaping the vaporized evaporation material 130A. The heating chamber 110 of this embodiment may be a cylindrical heating chamber, but the invention is not limited thereto, and other suitable shapes such as a box shape or a hexahedron may be used as needed in other preferred embodiments of the present invention. Heating chamber. In the present embodiment, the vapor deposition device 100 may further include a heater 150 for heating the evaporation material 130. In this embodiment, the heater 150 may be disposed on the outer side of the heating chamber 110, but is not limited thereto. For example, in a variant embodiment, the heater 150 can also be disposed inside the heating chamber 110.

請參考第1圖至第5圖。第3圖至第5圖繪示本發明之第一較佳實施例之蒸鍍裝置的溫度量測狀況示意圖。在本實施例中，各溫度量測元件140設置於坩堝內120之高度較佳係彼此相異，以藉由各溫度量測元件140所量測獲得之溫度值來判斷蒸鍍材料130位於坩堝120內的剩餘量。舉例來說，溫度量測元件140可包括第一溫度量測元件141、第二溫度量測元件142、第三溫度量測元件143以及第四溫度量測元件144。第一溫度量測元件141、第二溫度量測元件142、第三溫度量測元件143以及第四溫度量測元件144分別具有不同的長度，例如第一溫度量測元件141之長度大於第二溫度量測元件142之長度，第二溫度量測元件142之長度大於第三溫度量測元件143之長度，而第三溫度量測元件143之長度大於第四溫度量測元件144之長度。因此，第一溫度量測元件141、第二溫度 量測元件142、第三溫度量測元件143以及第四溫度量測元件144之量測端140M可分別設置於坩堝120可裝滿蒸鍍材料130之20%、40%、60%以及80%之容量的高度上。當坩堝120內的蒸鍍材料130剛補充完而進行加熱蒸鍍時，第一溫度量測元件141、第二溫度量測元件142、第三溫度量測元件143以及第四溫度量測元件144所量測到的溫度值係大體上相同，表示剩餘的蒸鍍材料130仍佔有坩堝120容量的80%以上。隨著蒸鍍製程的進行，被汽化之蒸鍍材料130A會經由噴嘴111逸出而使得坩堝120內剩餘的蒸鍍材料130逐漸減少(如第3圖至第5圖所示)。當第四溫度量測元件144所量測到的溫度值明顯小於其他溫度量測元件140所量測到的溫度值時，可判斷坩堝120內剩餘的蒸鍍材料130大約係介於坩堝120容量之80%至60%之間(如第3圖所示)。相同地，當第四溫度量測元件144以及第三溫度量測元件143所量測到的溫度值明顯小於第二溫度量測元件142以及第一溫度量測元件141所量測到的溫度值時，可判斷坩堝120內剩餘的蒸鍍材料130大約係介於坩堝120容量之60%至40%之間(如第4圖所示)。當第一溫度量測元件141所量測到的溫度值明顯大於其他溫度量測元件140所量測到的溫度值時，可判斷坩堝120內剩餘的蒸鍍材料130大約係介於坩堝120容量之40%至20%之間(如第5圖所示)。請注意本發明之各溫度量測元件140於坩堝內120之設置高度以及設置數量並不以上述狀況為限，而可視需要調整溫度量測元件140的數目與設置高度，以符合所需之監控模式。此外，各溫度量測元件140亦可用以對於蒸鍍材料130的溫度進行監控，藉以調整加熱器150的加熱強度。 Please refer to Figures 1 to 5. 3 to 5 are schematic views showing the temperature measurement state of the vapor deposition device according to the first preferred embodiment of the present invention. In the present embodiment, the heights of the temperature measuring elements 140 disposed in the crucible 120 are preferably different from each other, and the evaporation material 130 is determined to be located by the temperature value measured by each temperature measuring component 140. The remaining amount in 120. For example, the temperature measuring component 140 can include a first temperature measuring component 141, a second temperature measuring component 142, a third temperature measuring component 143, and a fourth temperature measuring component 144. The first temperature measuring component 141, the second temperature measuring component 142, the third temperature measuring component 143, and the fourth temperature measuring component 144 have different lengths, for example, the length of the first temperature measuring component 141 is greater than the second. The length of the temperature measuring component 142, the length of the second temperature measuring component 142 is greater than the length of the third temperature measuring component 143, and the length of the third temperature measuring component 143 is greater than the length of the fourth temperature measuring component 144. Therefore, the first temperature measuring component 141, the second temperature The measuring end 142, the third temperature measuring component 143, and the measuring end 140M of the fourth temperature measuring component 144 can be respectively disposed on the crucible 120 to fill 20%, 40%, 60%, and 80% of the vapor deposition material 130. The height of the capacity. When the vapor deposition material 130 in the crucible 120 is just heated and evaporated, the first temperature measuring element 141, the second temperature measuring element 142, the third temperature measuring element 143, and the fourth temperature measuring element 144 The measured temperature values are substantially the same, indicating that the remaining vapor deposition material 130 still accounts for more than 80% of the volume of 坩埚120. As the evaporation process proceeds, the vaporized vapor deposition material 130A escapes through the nozzles 111 such that the evaporation material 130 remaining in the crucible 120 is gradually reduced (as shown in FIGS. 3 to 5). When the temperature value measured by the fourth temperature measuring component 144 is significantly smaller than the temperature value measured by the other temperature measuring component 140, it can be determined that the remaining vapor deposition material 130 in the crucible 120 is approximately 坩埚120 capacity. Between 80% and 60% (as shown in Figure 3). Similarly, the temperature values measured by the fourth temperature measuring component 144 and the third temperature measuring component 143 are significantly smaller than the temperature values measured by the second temperature measuring component 142 and the first temperature measuring component 141. At this time, it can be judged that the remaining vapor deposition material 130 in the crucible 120 is approximately between 60% and 40% of the capacity of the crucible 120 (as shown in Fig. 4). When the temperature value measured by the first temperature measuring component 141 is significantly greater than the temperature value measured by the other temperature measuring component 140, it can be determined that the remaining vapor deposition material 130 in the crucible 120 is approximately 坩埚120 capacity. 40% to 20% (as shown in Figure 5). Please note that the set height and the number of the temperature measuring elements 140 of the present invention are not limited to the above conditions, and the number and setting height of the temperature measuring components 140 may be adjusted as needed to meet the required monitoring. mode. In addition, each temperature measuring component 140 can also be used to monitor the temperature of the evaporation material 130 to adjust the heating intensity of the heater 150.

本實施例之溫度量測元件140較佳係為熱電對(thermal couple)或其他適合之溫度量測元件。此外，蒸鍍裝置100可更包括記錄器170設置於加熱室110之外，且各溫度量測元件140設置於坩堝120外之另一端係與記錄器170相連，用以傳遞溫度量測結果至記錄器170以進行溫度量測數據之紀錄或可更進一步以此溫度量測數據轉換成蒸鍍材料130於坩堝120內的剩餘比例。另請注意，本實施例之蒸鍍材料130以狀態區分可包括液態蒸鍍材料或固態蒸鍍材料。此外，蒸鍍材料130較佳可包括有機發光材料，也就是說蒸鍍裝置100可用與有機發光材料之蒸鍍製程，但並不以此為限。此外，本實施例之蒸鍍裝置100可更包括絕熱塊160，設置於各溫度量測元件140插入加熱室110之處，用以避免因設置溫度量測元件140而影響到加熱室110內的加熱效果，但本發明並不以此為限，在本發明之其他較佳實施例中亦可視需要使溫度量測元件140經由噴嘴111而插入坩堝120內，且溫度量測元件140亦可為一非固定狀態而僅在需要進行量測時才伸入坩堝120內進行量測。 The temperature measuring component 140 of the present embodiment is preferably a thermal couple or other suitable temperature measuring component. In addition, the vapor deposition apparatus 100 may further include a recorder 170 disposed outside the heating chamber 110, and the other temperature measuring component 140 disposed at the other end of the crucible 120 is connected to the recorder 170 for transmitting the temperature measurement result to The recorder 170 performs a record of the temperature measurement data or may further convert the temperature measurement data into a remaining ratio of the vapor deposition material 130 in the crucible 120. Please also note that the evaporation material 130 of the present embodiment may include a liquid evaporation material or a solid evaporation material in a state distinction. In addition, the evaporation material 130 may preferably include an organic light-emitting material, that is, the vapor deposition device 100 may be used in an evaporation process with the organic light-emitting material, but is not limited thereto. In addition, the vapor deposition device 100 of the present embodiment may further include a heat insulating block 160 disposed at a position where each temperature measuring component 140 is inserted into the heating chamber 110 to avoid affecting the heating chamber 110 by the temperature measuring component 140. The heating effect is not limited thereto. In other preferred embodiments of the present invention, the temperature measuring component 140 can be inserted into the crucible 120 via the nozzle 111, and the temperature measuring component 140 can also be In a non-fixed state, it is only inserted into the crucible 120 for measurement when it is required to perform measurement.

下文將針對本發明之蒸鍍裝置的不同實施例進行說明，且為簡化說明，以下說明主要針對各實施例不同之處進行詳述，而不再對相同之處作重覆贅述。此外，本發明之各實施例中相同之元件係以相同之標號進行標示，以利於各實施例間互相對照。 The different embodiments of the vapor deposition apparatus of the present invention will be described below, and the following description is mainly for the sake of simplification of the description of the various embodiments, and the details are not repeated. In addition, the same elements in the embodiments of the present invention are denoted by the same reference numerals to facilitate the comparison between the embodiments.

請參考第6圖。第6圖繪示本發明之第二較佳實施例之蒸鍍裝 置的示意圖。如第6圖所示，本實施例之蒸鍍裝置200與上述第一較佳實施例不同的地方在於，蒸鍍裝置200僅包括一個溫度量測元件140。溫度量測元件140之一端係設置於坩堝120內，而本實施例之溫度量測元件140設置於坩堝120內之高度較佳係對應於警示剩餘量之高度。換句話說，當溫度量測元件140的量測溫度明顯降低時，可藉此判斷坩堝120內之蒸鍍材料130的剩餘量已低於上述之警示剩餘量，故可因此獲得警示而進行對應之處理動作。 Please refer to Figure 6. 6 is a view showing a vapor deposition device according to a second preferred embodiment of the present invention. Schematic diagram of the setting. As shown in FIG. 6, the vapor deposition apparatus 200 of the present embodiment is different from the above-described first preferred embodiment in that the vapor deposition apparatus 200 includes only one temperature measuring element 140. One end of the temperature measuring component 140 is disposed in the crucible 120, and the height of the temperature measuring component 140 of the present embodiment disposed in the crucible 120 preferably corresponds to the height of the warning remaining amount. In other words, when the measured temperature of the temperature measuring component 140 is significantly lowered, it can be determined that the remaining amount of the vapor deposition material 130 in the crucible 120 is lower than the above warning remaining amount, so that the warning can be obtained accordingly. Processing action.

請參考第7圖。第7圖繪示本發明之第三較佳實施例之蒸鍍裝置的示意圖。如第7圖所示，本實施例之蒸鍍裝置300與上述第二較佳實施例不同的地方在於，溫度量測元件140之量測端140M係經由噴嘴111而設置於坩堝120內部，且溫度量測元件140亦可為非固定狀態而僅在需要進行量測時才伸入坩堝120內進行量測。 Please refer to Figure 7. Figure 7 is a schematic view showing a vapor deposition apparatus according to a third preferred embodiment of the present invention. As shown in FIG. 7, the vapor deposition device 300 of the present embodiment is different from the second preferred embodiment in that the measuring end 140M of the temperature measuring component 140 is disposed inside the crucible 120 via the nozzle 111, and The temperature measuring component 140 can also be in a non-fixed state and only protrude into the crucible 120 for measurement when measurement is required.

請參考第8圖。第8圖繪示本發明之第四較佳實施例之蒸鍍裝置的示意圖。如第8圖所示，本實施例之蒸鍍裝置400包括加熱室410、坩堝420以及複數個溫度量測元件140。坩堝420係設置於加熱室410中，用以盛裝蒸鍍材料130。各溫度量測元件140之一端係設置於坩堝420內，用以量測蒸鍍材料130之溫度或坩堝420內的環境溫度，以監控蒸鍍材料130位於坩堝420內的容量。加熱室4110可包括主體410A以及外蓋410B，外蓋410B係設置於主體410A上，且外蓋410B具有複數個噴嘴111，用以逸出被汽化之蒸鍍材料130A。此外，蒸鍍裝置400可更包括加熱器150，用以對蒸 鍍材料130進行加熱。本實施例之蒸鍍裝置400與上述第一較佳實施例不同的地方在於，本實施例之加熱室410係為長方體的箱形加熱室，而坩堝420亦可對應為長方體的箱形坩堝，但並不以此為限。此外，各溫度量測元件140可透過絕熱塊160插入加熱室410，用以避免因設置溫度量測元件140而影響到加熱室410內的加熱效果，但本發明並不以此為限，在本發明之其他較佳實施例中亦可視需要使溫度量測元件140經由噴嘴111而插入坩堝420內，且溫度量測元件140亦可為非固定狀態而僅在需要進行量測時才伸入坩堝120內進行量測。 Please refer to Figure 8. Figure 8 is a schematic view showing a vapor deposition apparatus according to a fourth preferred embodiment of the present invention. As shown in FIG. 8, the vapor deposition apparatus 400 of the present embodiment includes a heating chamber 410, a crucible 420, and a plurality of temperature measuring elements 140. The crucible 420 is disposed in the heating chamber 410 for containing the vapor deposition material 130. One end of each temperature measuring component 140 is disposed in the crucible 420 for measuring the temperature of the vapor deposition material 130 or the ambient temperature within the crucible 420 to monitor the capacity of the vapor deposition material 130 within the crucible 420. The heating chamber 4110 may include a main body 410A and an outer cover 410B. The outer cover 410B is disposed on the main body 410A, and the outer cover 410B has a plurality of nozzles 111 for escaping the vaporized evaporation material 130A. In addition, the vapor deposition device 400 may further include a heater 150 for steaming The plating material 130 is heated. The difference between the vapor deposition device 400 of the present embodiment and the first preferred embodiment is that the heating chamber 410 of the present embodiment is a box-shaped heating chamber having a rectangular parallelepiped shape, and the crucible 420 may also correspond to a box-shaped crucible having a rectangular parallelepiped shape. But it is not limited to this. In addition, each temperature measuring component 140 can be inserted into the heating chamber 410 through the heat insulating block 160 to avoid affecting the heating effect in the heating chamber 410 by the temperature measuring component 140. However, the present invention is not limited thereto. In other preferred embodiments of the present invention, the temperature measuring component 140 can be inserted into the crucible 420 via the nozzle 111 as needed, and the temperature measuring component 140 can also be in a non-fixed state and only protrude when the measurement is required. Measured within 坩埚120.

綜合以上所述，本發明之蒸鍍裝置係於坩堝內部設置溫度量測元件，利用蒸鍍材料之溫度與放置蒸鍍材料之坩堝內的環境溫度之間的差異來對蒸鍍材料於坩堝內的剩餘量進行即時監控，達到確實掌控蒸鍍材料剩餘量之目的。 In summary, the vapor deposition device of the present invention is provided with a temperature measuring element inside the crucible, and the vapor deposition material is placed in the crucible by the difference between the temperature of the evaporation material and the ambient temperature of the crucible placed in the evaporation material. The remaining amount is monitored in real time to achieve the purpose of controlling the remaining amount of the vapor deposition material.

以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

100‧‧‧蒸鍍裝置 100‧‧‧Vapor deposition unit

110‧‧‧加熱室 110‧‧‧heating room

110A‧‧‧主體 110A‧‧‧ Subject

110B‧‧‧外蓋 110B‧‧‧ Cover

111‧‧‧噴嘴 111‧‧‧Nozzles

120‧‧‧坩堝 120‧‧‧坩埚

130‧‧‧蒸鍍材料 130‧‧‧vapor deposition materials

130A‧‧‧被汽化之蒸鍍材料 130A‧‧‧ vaporized evaporation material

140‧‧‧溫度量測元件 140‧‧‧Temperature measuring components

140M‧‧‧量測端 140M‧‧‧measuring end

141‧‧‧第一溫度量測元件 141‧‧‧First temperature measuring component

142‧‧‧第二溫度量測元件 142‧‧‧Second temperature measuring component

143‧‧‧第三溫度量測元件 143‧‧‧ Third temperature measuring component

144‧‧‧第四溫度量測元件 144‧‧‧ Fourth temperature measuring component

150‧‧‧加熱器 150‧‧‧heater

160‧‧‧絕熱塊 160‧‧‧Insulation block

170‧‧‧記錄器 170‧‧‧ Recorder

200‧‧‧蒸鍍裝置 200‧‧‧vapor deposition unit

300‧‧‧蒸鍍裝置 300‧‧‧Vapor deposition unit

400‧‧‧蒸鍍裝置 400‧‧‧vapor deposition unit

410‧‧‧加熱室 410‧‧‧heating room

410A‧‧‧主體 410A‧‧‧ Subject

410B‧‧‧外蓋 410B‧‧‧ Cover

420‧‧‧坩堝 420‧‧‧坩埚

第1圖繪示本發明之第一較佳實施例之蒸鍍裝置的示意圖。 Fig. 1 is a schematic view showing a vapor deposition apparatus according to a first preferred embodiment of the present invention.

第2圖繪示本發明之第一較佳實施例之蒸鍍裝置的溫度量測元件示意圖。 2 is a schematic view showing the temperature measuring element of the vapor deposition device according to the first preferred embodiment of the present invention.

第3圖至第5圖繪示本發明之第一較佳實施例之蒸鍍裝置的溫度量 測狀況示意圖。 3 to 5 illustrate the temperature of the vapor deposition device of the first preferred embodiment of the present invention. A schematic diagram of the condition.

第6圖繪示本發明之第二較佳實施例之蒸鍍裝置的示意圖。 Figure 6 is a schematic view showing a vapor deposition apparatus according to a second preferred embodiment of the present invention.

第7圖繪示本發明之第三較佳實施例之蒸鍍裝置的示意圖。 Figure 7 is a schematic view showing a vapor deposition apparatus according to a third preferred embodiment of the present invention.

第8圖繪示本發明之第四較佳實施例之蒸鍍裝置的示意圖。 Figure 8 is a schematic view showing a vapor deposition apparatus according to a fourth preferred embodiment of the present invention.

100‧‧‧蒸鍍裝置 100‧‧‧Vapor deposition unit

110‧‧‧加熱室 110‧‧‧heating room

110A‧‧‧主體 110A‧‧‧ Subject

110B‧‧‧外蓋 110B‧‧‧ Cover

111‧‧‧噴嘴 111‧‧‧Nozzles

120‧‧‧坩堝 120‧‧‧坩埚

130‧‧‧蒸鍍材料 130‧‧‧vapor deposition materials

130A‧‧‧被汽化之蒸鍍材料 130A‧‧‧ vaporized evaporation material

140‧‧‧溫度量測元件 140‧‧‧Temperature measuring components

140M‧‧‧量測端 140M‧‧‧measuring end

141‧‧‧第一溫度量測元件 141‧‧‧First temperature measuring component

142‧‧‧第二溫度量測元件 142‧‧‧Second temperature measuring component

143‧‧‧第三溫度量測元件 143‧‧‧ Third temperature measuring component

144‧‧‧第四溫度量測元件 144‧‧‧ Fourth temperature measuring component

150‧‧‧加熱器 150‧‧‧heater

160‧‧‧絕熱塊 160‧‧‧Insulation block

170‧‧‧記錄器 170‧‧‧ Recorder

Claims (10)

一種蒸鍍裝置，包括：一加熱室；一坩堝，設置於該加熱室中，用以盛裝一蒸鍍材料；以及至少一溫度量測元件，其中該溫度量測元件之一量測端係設置於該坩堝內部。 An evaporation device comprising: a heating chamber; a crucible disposed in the heating chamber for containing an evaporation material; and at least one temperature measuring component, wherein one of the temperature measuring components is configured Inside the house. 如請求項1所述之蒸鍍裝置，其中該溫度量測元件係用以量測該蒸鍍材料之溫度或該坩堝內的環境溫度，以監控該蒸鍍材料位於該坩堝內的容量。 The vapor deposition device of claim 1, wherein the temperature measuring component is configured to measure a temperature of the vapor deposition material or an ambient temperature within the crucible to monitor a capacity of the vapor deposition material in the crucible. 如請求項1所述之蒸鍍裝置，其中該溫度量測元件之該量測端係設置於該坩堝內一警示剩餘量之高度，當所量測之溫度低於一預定溫度表示該蒸鍍材料之剩餘量低於警示剩餘量。 The vapor deposition device of claim 1, wherein the measuring end of the temperature measuring component is disposed at a height of the warning remaining amount in the crucible, and the vaporizing is performed when the measured temperature is lower than a predetermined temperature. The remaining amount of material is lower than the warning remaining amount. 如請求項1所述之蒸鍍裝置，其中該至少一溫度量測元件係包括複數個溫度量測元件，且該等溫度量測元件之各該量測端設置於該坩堝內之高度係彼此相異，用以監控不同剩餘量的該蒸鍍材料。 The vapor deposition device of claim 1, wherein the at least one temperature measuring component comprises a plurality of temperature measuring components, and each of the measuring terminals of the temperature measuring components is disposed in the height of the crucible Different, used to monitor different remaining amounts of the evaporation material. 如請求項1所述之蒸鍍裝置，其中該溫度量測元件包括一熱電對(thermal couple)。 The vapor deposition device of claim 1, wherein the temperature measuring component comprises a thermal couple. 如請求項1所述之蒸鍍裝置，更包括一記錄器，設置於該加熱室 之外，其中該溫度量測元件設置於該坩堝外之另一端係與該記錄器相連，用以傳遞溫度量測結果至該記錄器。 The vapor deposition device of claim 1, further comprising a recorder disposed in the heating chamber In addition, the other end of the temperature measuring component disposed outside the crucible is coupled to the recorder for transmitting a temperature measurement result to the recorder. 如請求項1所述之蒸鍍裝置，更包括一加熱器，設置於該加熱室之一外側，用以對該蒸鍍材料進行加熱。 The vapor deposition device according to claim 1, further comprising a heater disposed outside one of the heating chambers for heating the vapor deposition material. 如請求項1所述之蒸鍍裝置，其中該加熱室包括一主體以及一外蓋，該外蓋係設置於該主體上，且該外蓋具有至少一噴嘴，用以逸出被汽化之該蒸鍍材料。 The vapor deposition device of claim 1, wherein the heating chamber comprises a main body and an outer cover, the outer cover is disposed on the main body, and the outer cover has at least one nozzle for escaping the vaporized Evaporation material. 如請求項8所述之蒸鍍裝置，其中該溫度量測元件之該量測端係經由該噴嘴而設置於該坩堝內部。 The vapor deposition device of claim 8, wherein the measuring end of the temperature measuring component is disposed inside the crucible via the nozzle. 如請求項1所述之蒸鍍裝置，其中該加熱室包括一圓柱狀加熱室或一長方體形加熱室。 The vapor deposition device of claim 1, wherein the heating chamber comprises a cylindrical heating chamber or a rectangular heating chamber.
TW101150080A 2012-12-26 2012-12-26 Evaporation apparatus TWI477625B (en)

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