TW201425259A - 塊體金屬玻璃之連接方法 - Google Patents
塊體金屬玻璃之連接方法 Download PDFInfo
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- 239000005300 metallic glass Substances 0.000 title claims abstract description 102
- 238000005304 joining Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 238000003856 thermoforming Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 22
- 239000011521 glass Substances 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004100 electronic packaging Methods 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- AJZRPMVVFWWBIW-UHFFFAOYSA-N [Au].[Bi] Chemical compound [Au].[Bi] AJZRPMVVFWWBIW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000923 precious metal alloy Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013526 supercooled liquid Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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Abstract
具有至少一表面的塊體金屬玻璃:施加接觸層於該塊體金屬玻璃之該至少一表面之至少一部分;施加擴散阻障層於該接觸層;施加覆蓋層於該擴散阻障層,以形成層狀塊體金屬玻璃;以及連接材料至該層狀塊體金屬玻璃。
Description
本專利申請案根據專利法主張於2012年11月29日提出申請的美國臨時專利申請案序號第61/731,146號的優先權權益,該申請案之全部內容以引用方式併入本文中。
本揭示係關於塊體金屬玻璃,而且更具體言之,本揭示係關於可用於例如電子封裝的連接塊體金屬玻璃之方法。
金屬玻璃是具有非結晶微結構的金屬合金。金屬玻璃通常是藉由從熔融狀態快速淬冷而獲得的,快速淬冷阻礙結晶進行。金-矽合金的金屬玻璃箔的製備最早是在1960年被報導出。直徑約1mm的貴金屬合金金屬玻璃棒是在1970年代中期至1980年代被報導出。然而,當直徑大於幾毫米的塊體金屬玻璃(BMG)被從普通金屬的合金成功地製備出時,在1980年代末和1990年代對金屬玻璃的興趣迅速增加。
金屬玻璃的無序原子結構、無晶界以及介穩態造成了獨特的性質。金屬玻璃像傳統的金屬會導電,但還會類似
於傳統的玻璃變形並破碎而喪失張力。典型的塑膠流動(plastic flow)載體、錯位並不存在,而導致高的拉伸強度和彈性極限,但失效模式與傳統金屬是不同類的。金屬玻璃複合物的形成,無論是藉由在玻璃狀基質中混合或是在玻璃狀基質內析出第二相,皆已被報告為用於調整這些材料的機械、熱及電性質的方法。
就像傳統的玻璃,金屬玻璃表現出玻璃化轉化溫度(Tg),並在Tg以上的溫度(Tx)結晶。在此超冷卻液體區(SCLR,Tx-Tg)內,可以使用類似於用於傳統玻璃的方法將金屬玻璃熱塑性地成形為精確和複雜的形狀-例如壓縮模塑、吹、壓花。金屬玻璃也可以被直接澆鑄到模具中並淬冷成具有非常低收縮率的玻璃態。
塊體金屬玻璃的這些性質都使得他們在航空、航海、運動器材、電子封裝、微機電系統及生醫設備的應用中具吸引力。為了能夠應用於大多數的這些領域中,具有能夠連接2個塊體金屬玻璃或塊體金屬玻璃與其他類材料的連接技術會是有利的。
一個實施例為一種方法,該方法包含以下步驟:提供具有至少一表面的塊體金屬玻璃;施加接觸層於該塊體金屬玻璃之該至少一表面之至少一部分;施加擴散阻障層於該接觸層;施加覆蓋層於該擴散阻障層,以形成層狀塊體金屬玻
璃;以及連接材料至該層狀塊體金屬玻璃。
另一個實施例為一種塊體金屬玻璃次黏著基座(submount),包含:具有至少一表面的塊體金屬玻璃;在該塊體金屬玻璃之該至少一表面的至少一部分上的接觸層;該接觸層上的擴散阻障層;以及該擴散阻障層上的覆蓋層。
本文揭示一種這樣的連接技術,該連接技術可適用於電子封裝。進一步揭示的是一種將塊體金屬玻璃用於微電子封裝或光電封裝領域的應用。一些實施例可以提供對GaN有良好的熱膨脹係數匹配的基板,同時還具有良好的熱穩定性、化學耐久性及表面拋光特性。進一步的優點可能是由於減少的材料花費和較少的製程步驟所帶來的容易封裝成形或明顯的成本節省。這是有利的,因為在一些產品中,70-80%的成本是材料花費。假使產品是應用於成本是重要因素的消費性電子元件,則塊體金屬玻璃封裝可以提供顯著的優勢。另外,本文所揭示的塊體金屬玻璃連接方法與標準的焊接材料及製程設備相容。
本文揭示了一種新的連接製程及塊體金屬玻璃(BMG)的應用。還揭示了一種經由焊接連接半導體材料或任何其他類的材料與塊體金屬玻璃的方法。塊體金屬玻璃可以被塗覆鉻-鎳,之後是鈍性的胺磺酸鎳(dull-sulfamate
nickel),然後是金。建議其他的材料在將與塊體金屬玻璃連接的面上具有金塗層。在一些實施例中,其他的面具有上述的三層。在像是GaAs的半導體中,金屬化為鈦/鉑/金,在InP中,接續的金屬化通常是鈦/鎢/鎢等。有幾種其他的組合,而這些只是實例。在覆蓋層(例如金)之後,焊料可以被預先沉積在基板上,或是焊料可以處於預成形層的型式。
可以使用焊接來連接兩種材料。可以使用的焊料包括任何被例行使用於微電子和光電封裝的傳統焊料,例如共晶的金-錫、SAC305、SAC405等。所揭示的應用是整個光電封裝可以利用塊體金屬玻璃的易於成形而由塊體金屬玻璃形成。此可減少基板的需求、黏附基板和次黏著基座、封裝基座(package base)等的製程之需求。整體封裝會僅是由塊體金屬玻璃所構成的單一件。
將在以下的實施方式中提出其他的特徵和優點,並且從該描述或藉由實施本文所描述的實施例,包括以下的實施方式、申請專利範圍以及附圖,本技術領域中具有通常知識者將可輕易理解到,部分的特徵和優點是顯而易見的。
應瞭解的是,前面的一般性描述和以下的實施方式皆僅為示例性的,並且意圖提供用以瞭解申請專利範圍之本質和特性的概述或框架。附圖被涵括,以提供進一步的瞭解,並且附圖被併入本說明書以及構成本說明書的一部分。圖式說明了一或多個實施例,並與說明一起用以解釋各種實施例的原理和操作。
10‧‧‧混合體
14‧‧‧晶片
16‧‧‧鉬塊
18‧‧‧封裝基座
20‧‧‧塊體金屬玻璃
22‧‧‧半導體晶片
24‧‧‧金墊
26‧‧‧提供具有至少一表面的塊體金屬玻璃
28‧‧‧施加接觸層於該塊體金屬玻璃之該至少一表面
30‧‧‧施加擴散阻障層於該接觸層
32‧‧‧施加覆蓋層於該擴散阻障層
36‧‧‧線
38‧‧‧砷化鎵(GaAs)晶片
40‧‧‧塊體金屬玻璃基板
42‧‧‧焊料
44‧‧‧塊體金屬玻璃基板
100‧‧‧光電元件封裝
200‧‧‧基座結構
第1圖為先前技術的光電封裝之圖示。
第2圖為依據示例性的方法製作的使用塊體金屬玻璃的光電封裝之圖示。
第3圖為示例性的連接方法之圖示。
第4圖為依據示例性的方法製作的塊體金屬玻璃的拋光表面之X-射線繞射分析圖。
第5圖為被焊接於金屬化或塗覆的塊體金屬玻璃基板的GaAs晶片之光學照片。
第6圖為焊接界面的背散射電子圖像,顯示金屬化層的黏著及焊接於塊體金屬玻璃基板。
現在將詳細地參照玻璃陶瓷的各種實施例以及玻璃陶瓷在LED物件中的用途,此等實例被圖示於附圖中。只要有可能,將在所有的圖式中使用相同的元件符號來表示相同或相似的部件。
第1圖為顯示現有技術的光電元件封裝100之圖示,例如傳統的合成綠色雷射。在此封裝中,首先使用焊料將雷射附接於混合體10。該混合體是氮化鋁(AlN),氮化鋁的熱膨脹係數(~4.4ppm/C)匹配砷化鎵晶片的熱膨脹係數(~6.2ppm/C),並且還具有高的導熱率(150W/m-K),以促進良好的熱管理。晶片14經由導線連接到氮化鋁混合體上的金墊。稍後使用焊料將晶片加上該混合體附接於鉬塊16。然後將整個堆疊附接於封裝基座18。
除了晶片之外,還有三個另外的組件:混合體、鉬
塊及封裝基座。在典型的封裝中,主要有四個製程步驟:在晶片和混合體之間的焊接、在混合體和鉬塊之間的焊接、在鉬塊和封裝基座之間的焊接以及最後的導線連接。每個組件必須被單獨塗覆,以便利焊接製程。
本文所揭示的示例性連接方法使用了塊體金屬玻璃來形成整個基座結構200,如第2圖所圖示。第2圖為使用依據示例性方法所製作的塊體金屬玻璃的光電封裝之圖示。「L、W、t」表示特定的應用。然而,這些值視應用而改變。
為了方便起見,此結構在本文中被稱為「BMG封裝結構」。塊體金屬玻璃20的組成可以選自任何表現出良好玻璃成形性(大的臨界厚度)的系統。臨界厚度(tmax,單位為mm)是合金可被鑄成且仍保持非晶形的最大厚度。此厚度與合金通過Rc~1000/tmax2表達的臨界冷卻速率(Rc,單位為度K/s)有關(即合金必須被多快地淬冷成為非晶形)。因此,假使需要2mm厚的部件,則合金需要具有RC~250K/秒,或對於3mm厚的部件,RC~100K/秒),包括例如鋯系合金(例如Zr55Al10Ni5Cu30、Zr52.5Cu17.9Ni14.6Al10Ti5)、貴金屬系合金(例如Pd40Cu30Ni10P20)、銅系合金(例如Cu49Zr45Al6)、稀土系合金及鈦系合金。
在第2圖中進一步圖示的是半導體晶片22和塊體金屬玻璃上的金墊24。有利的是,使塊體金屬玻璃材料的成本盡可能地低,以減少材料的花費,塊體金屬玻璃不含有毒元素或脫氣的組分,而且塊體金屬玻璃的Tg比在封裝製程中使用的金屬化和焊接溫度更高。塊體金屬玻璃的封裝結構可以
藉由將熔化物直接鑄入具有足夠淬冷速率的模具中,以形成玻璃狀的材料(例如壓鑄)。或者,可以澆鑄塊體金屬玻璃預成形物,然後藉由將材料再加熱成為SCLR並形成網狀而將該預成形物熱塑成形為塊體金屬玻璃封裝結構,例如壓縮成型、注射成型。或者,該塊體金屬玻璃預成形物可以是被熱塑成形或燒結的金屬玻璃粉末。或者,該塊體金屬玻璃材料可以是含有玻璃相和第二相顆粒的複合材料,該第二相顆粒可以是被加入材料中的或在原位形成的(藉由結晶)。可以使用這樣的第二相來控制材料的性質,例如材料的熱膨脹係數或導熱率。
第3圖為示例性的連接方法之圖示。
實例被圖示於第3圖中的一個實施例係一種方法,該方法包含以下步驟:提供具有至少一表面的塊體金屬玻璃26;施加接觸層於該塊體金屬玻璃之該至少一表面28;施加擴散阻障層於該接觸層30;施加覆蓋層於該擴散阻障層32;以及連接材料至該層狀塊體金屬玻璃。
另一個實施例為一種塊體金屬玻璃次黏著基座,包含:具有至少一表面的塊體金屬玻璃;在該塊體金屬玻璃之該至少一表面的至少一部分上的接觸層;該接觸層上的擴散阻障層;以及
該擴散阻障層上的覆蓋層。
用於將半導體晶片連接到塊體金屬玻璃封裝的示例性方法如下:首先製備上面將被半導體晶片附著的塊體金屬玻璃之表面。該塊體金屬玻璃被使用例如蒸發技術沉積鉻鎳塗層。該塊體金屬玻璃的整個表面或一部分表面可以被塗覆。之後是鎳閃火,然後是金塗佈。對於可焊接的應用,可以使用鈍性的胺磺酸鎳沉積物。胺磺酸鎳沉積物提供了抗腐蝕性。在這些步驟之後有兩個選項,例如可以使用焊料預成形物或是可以將焊料預先沉積到塗覆的塊體金屬玻璃上。這可以促進半導體晶片對塊體金屬玻璃的焊接。
在一些實施例中,絕緣層(例如SiN)是被沉積在塊體金屬玻璃表面的未塗覆部分上,並且金墊被塗覆,而可以作為導線連接的墊。在一些實施例中,只需要一個組件和兩個連接的製程步驟(晶片附著於塊體金屬玻璃封裝結構和導線連接),並且可以經由減少的材料花費、製程時間及步驟數目而產生成本節省。假使將塊體金屬玻璃材料的CTE訂製為半導體晶片的CTE而且導熱率足夠高(例如~200W/m-K),則晶片的可靠性將不會受到影響。
作為實例,形成塊體金屬玻璃基板並使用所揭示的方法將塊體金屬玻璃基板連接到GaAs晶片。藉由以下的方法製作鋯系金屬玻璃Zr52.5Cu17.9Ni14.6Al10Ti5的塊體金屬玻璃基板。在吹洗氬氣的手套箱中稱重高純度的鋯、銅、鎳、鋁及鈦絲。在水冷銅爐床上的乾淨氬氣氛圍中電弧熔化金屬,以形成合金的鈕扣。將鈕扣重新熔化3-4次,以使材料均
勻。然後將該合金鈕扣在電弧熔化器中重新熔化,並抽吸鑄入尺寸為1.5mm x 8mm x 30mm的水冷銅模中。將初鑄的塊體金屬玻璃之一個表面進行拋光。
第4圖為塊體金屬玻璃的拋光表面之X-射線繞射分析圖,並顯示出該材料是非晶形的。塊體金屬玻璃基板的拋光表面之X-射線繞射圖案線36顯示出主要是非晶形結構。疊加在非晶形背景上的小尖峰可以被歸因於塊體金屬玻璃基板表面上的結晶氧化物相。將該塊體金屬玻璃基板進行切割並拋光成5mm x 5mm x 1mm厚的基板,一個表面具有鏡面般的拋光,另一個表面是粗糙的拋光平坦化表面。
藉由DSC-TGA量測Vit105 BMG的Tg為~395℃以及Tx(開始)為~453℃。將塊體金屬玻璃基板進行清洗和金屬化或塗覆。接著,將這些塊體金屬玻璃基板塗覆鉻鎳,之後塗覆鈍性的胺磺酸鎳,然後塗覆金。將共晶金-錫焊料預成形體切割成需要的形狀並夾置於塊體金屬玻璃基板和半導體晶片之間。將此多層的堆疊與晶片保持緊密並小心地轉移到回流焊爐。爐中的最高溫度是320℃並被冷卻至室溫。這是因為金-錫焊料的熔點是280℃。一旦形成了連接,從回流焊爐中取出焊接組件,並如同第一步驟,用針撥動晶片,以確保晶片被牢固地黏著於基板。接著,將其中一個組裝的樣品載入dage機中並進行剪切測試。剪除晶片所需的剪切力為約0.5Kg。
第5圖為被焊接於金屬化或塗覆的塊體金屬玻璃基板40的砷化鎵(GaAs)晶片38之光學照片。
第6圖為塊體金屬玻璃/金屬化+焊料界面的SEM圖像。第6圖為焊接界面的背散射電子圖像,顯示金屬化層與焊料42黏著於塊體金屬玻璃基板44。結果顯示,GaAs已被成功焊接於塗覆的塊體金屬玻璃基板。
對於本技術領域中具有通常知識者而言,顯而易見的是可以在不偏離所主張的標的物之精神和範疇下對本文所述的實施例進行各種修改和變化。因此,意圖的是本說明書涵蓋本文所述的各種實施例之修改和變化,前提是這樣的修改和變化落入所附的申請專利範圍及其等同物之範圍內。
20‧‧‧塊體金屬玻璃
22‧‧‧半導體晶片
24‧‧‧金墊
200‧‧‧基座結構
Claims (19)
- 一種方法,該方法包含以下步驟:提供一具有至少一表面的塊體金屬玻璃;施加一接觸層於該塊體金屬玻璃之該至少一表面之至少一部分;施加一擴散阻障層於該接觸層;施加一覆蓋層於該擴散阻障層,以形成一層狀塊體金屬玻璃;以及連接一材料至該層狀塊體金屬玻璃。
- 如請求項1所述之方法,其中該接觸層包含鉻和鎳、鈦、鈀或上述之組合。
- 如請求項1所述之方法,其中該擴散阻障層包含鎳、鉑、鈀、鎢或上述之組合。
- 如請求項1所述之方法,其中該覆蓋層包含金、鉑或上述之組合。
- 如請求項1所述之方法,其中該擴散阻障層係由鈍性的胺磺酸鎳(dull-sulfamate nickel)所構成。
- 如請求項1所述之方法,進一步包含在施加該覆蓋層之前沉積一絕緣層於該塊體金屬玻璃之任何裸露部分上。
- 如請求項3所述之方法,其中該絕緣層係由氮化矽、氮氧化矽(oxynitride)或上述之組合所構成。
- 如請求項1所述之方法,其中該連接包含將該材料焊接至該層狀塊體金屬玻璃。
- 如請求項5所述之方法,其中該焊接包含使用一或多個焊料預成形物。
- 如請求項5所述之方法,其中該焊接包含將焊料預先沉積於該層狀塊體金屬玻璃上。
- 如請求項1所述之方法,其中該材料包含一含金的覆蓋層。
- 如請求項1所述之方法,其中該提供該塊體金屬玻璃包含將該塊體金屬玻璃之一熔化物澆鑄於一模具中。
- 如請求項1所述之方法,其中該提供該塊體金屬玻璃包含澆鑄該塊體金屬玻璃並熱塑形成該塊體金屬玻璃。
- 如請求項1所述之方法,其中該提供該塊體金屬玻璃包含形成或燒結一金屬玻璃粉末。
- 如請求項1所述之方法,其中該塊體金屬玻璃為一複合材料,該複合材料包含一金屬玻璃相及一或多個結晶相、非晶相或上述之組合。
- 一種塊體金屬玻璃次黏著基座(submount),包含:具有至少一表面的一塊體金屬玻璃;在該塊體金屬玻璃之該至少一表面的至少一部分上的一接觸層;該接觸層上的一擴散阻障層;以及該擴散阻障層上的一覆蓋層。
- 一種電子封裝,包含如請求項16所述之該塊體金屬次黏著基座。
- 如請求項17所述之封裝,其中該封裝為一LED或一半導體雷射封裝。
- 如請求項17所述之封裝,其中該塊體金屬玻璃為一複合材料,該複合材料包含一金屬玻璃相及一或多個結晶相、非晶相或上述之組合。
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US201261731146P | 2012-11-29 | 2012-11-29 |
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TW201425259A true TW201425259A (zh) | 2014-07-01 |
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TW102143267A TW201425259A (zh) | 2012-11-29 | 2013-11-27 | 塊體金屬玻璃之連接方法 |
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US (1) | US20150305145A1 (zh) |
EP (1) | EP2925484A4 (zh) |
CN (1) | CN105026099A (zh) |
TW (1) | TW201425259A (zh) |
WO (1) | WO2014085241A1 (zh) |
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CN105436724B (zh) * | 2014-09-23 | 2020-03-03 | 苹果公司 | 通过焊接整修块体金属玻璃(bmg)制品中的表面特征的方法 |
CN108031998A (zh) * | 2017-12-28 | 2018-05-15 | 江苏华尚汽车玻璃工业有限公司 | 一种金属玻璃的焊接装置及其焊接方法 |
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BE792908A (fr) * | 1971-12-20 | 1973-04-16 | Western Electric Co | Procede de fabrication de dispositifs semi-conducteurs |
US5024883A (en) * | 1986-10-30 | 1991-06-18 | Olin Corporation | Electronic packaging of components incorporating a ceramic-glass-metal composite |
US4796083A (en) * | 1987-07-02 | 1989-01-03 | Olin Corporation | Semiconductor casing |
TW340139B (en) * | 1995-09-16 | 1998-09-11 | Moon Sung-Soo | Process for plating palladium or palladium alloy onto iron-nickel alloy substrate |
US6627814B1 (en) * | 2002-03-22 | 2003-09-30 | David H. Stark | Hermetically sealed micro-device package with window |
US7628871B2 (en) * | 2005-08-12 | 2009-12-08 | Intel Corporation | Bulk metallic glass solder material |
US7705458B2 (en) * | 2006-06-20 | 2010-04-27 | Intel Corporation | Bulk metallic glass solders, foamed bulk metallic glass solders, foamed-solder bond pads in chip packages, methods of assembling same, and systems containing same |
WO2008124623A1 (en) * | 2007-04-04 | 2008-10-16 | California Institute Of Technology | Process for joining materials using bulk metallic glasses |
CN101765473B (zh) * | 2007-07-25 | 2012-11-28 | 国立大学法人熊本大学 | 利用高能束焊接金属玻璃和晶体金属的方法 |
TWI331550B (en) * | 2007-12-20 | 2010-10-11 | Univ Nat Taiwan Ocean | A diffusion bonding method for blocks of based bulk metallic glass |
US20120125071A1 (en) * | 2009-03-27 | 2012-05-24 | Jan Schroers | Carbon molds for use in the fabrication of bulk metallic glass parts and molds |
EP2531632A2 (en) * | 2010-02-01 | 2012-12-12 | Crucible Intellectual Property, LLC | Nickel based thermal spray powder and coating, and method for making the same |
US9507061B2 (en) * | 2011-11-16 | 2016-11-29 | California Institute Of Technology | Amorphous metals and composites as mirrors and mirror assemblies |
-
2013
- 2013-11-22 WO PCT/US2013/071433 patent/WO2014085241A1/en active Application Filing
- 2013-11-22 CN CN201380062515.8A patent/CN105026099A/zh active Pending
- 2013-11-22 EP EP13858388.5A patent/EP2925484A4/en not_active Withdrawn
- 2013-11-22 US US14/646,217 patent/US20150305145A1/en not_active Abandoned
- 2013-11-27 TW TW102143267A patent/TW201425259A/zh unknown
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WO2014085241A1 (en) | 2014-06-05 |
CN105026099A (zh) | 2015-11-04 |
US20150305145A1 (en) | 2015-10-22 |
EP2925484A1 (en) | 2015-10-07 |
EP2925484A4 (en) | 2016-07-27 |
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