TW201422799A - 熱介面組合物及其製造與使用方法 - Google Patents

熱介面組合物及其製造與使用方法 Download PDF

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TW201422799A
TW201422799A TW102140743A TW102140743A TW201422799A TW 201422799 A TW201422799 A TW 201422799A TW 102140743 A TW102140743 A TW 102140743A TW 102140743 A TW102140743 A TW 102140743A TW 201422799 A TW201422799 A TW 201422799A
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thermal interface
tim
interface material
height
sections
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TW102140743A
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Andrew John Ouderkirk
Ravi Kishore Sura
Hun Jeong
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3M Innovative Properties Co
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Publication of TW201422799A publication Critical patent/TW201422799A/zh

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
    • B29C39/003—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor characterised by the choice of material
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    • B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
    • B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
    • B29C39/026—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles characterised by the shape of the surface
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    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
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    • B29K2105/0097—Glues or adhesives, e.g. hot melts or thermofusible adhesives
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    • B29K2105/06—Condition, form or state of moulded material or of the material to be shaped containing reinforcements, fillers or inserts
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Abstract

一熱介面材料包括一可保形組件及分散於該可保形組件中之一熱傳導填料。在彼此橫向隔開之至少兩個區段中提供該材料以界定一或多個間隙，該等區段中之每一者具有一長度、一寬度及一高度。該至少兩個區段之長度對高度及/或寬度對高度之平均縱橫比介於1:10與10:1之間。

Description

熱介面組合物及其製造與使用方法
本發明係關於熱管理材料。更特定而言，本發明係關於可在電子裝置中之電子組件之間的介面處使用的熱管理材料。
各種熱介面材料已具備淺表面特徵，以在附接至表面期間適應熱介面處之空氣移除。舉例而言，(Liberty等人之)美國專利案第5,213,868號中描述具有此等表面特徵之各種熱介面材料。
在一些實施例中，提供一種熱介面材料。該熱介面材料包括一可保形組件及分散於該可保形組件中之一熱傳導填料。在彼此橫向隔開之至少兩個區段中提供該材料以界定一或多個間隙，該等區段中之每一者具有一長度、一寬度及一高度。該至少兩個區段之長度對高度及/或寬度對高度之平均縱橫比介於1：10與10：1之間。
在一些實施例中，提供一種用於製造一熱介面材料之方法。該方法包括提供一熱介面材料。該熱介面材料包括一可保形組件及熱傳導粒子。該方法進一步包括將該熱介面材料澆鑄至一模具中。該模具經組態以使該熱介面材料具備一圖案，藉以在彼此橫向隔開之至少兩個區段中提供該熱介面材料以界定一或多個間隙，該等區段中之每一者具有一長度、一寬度及一高度。該至少兩個區段之長度對高度及/ 或寬度對高度之平均縱橫比介於1：10與10：1之間。該方法進一步包括自該模具移除該熱介面材料。
在一些實施例中，提供一種用於製造一電子裝置之方法。該方法包括提供一物品。該物品包括：包括一第一釋離表面之一第一釋離襯墊；及包括一第二釋離表面之一第二釋離襯墊。一熱介面材料係安置於該第一釋離表面與該第二釋離表面之間。該方法進一步包括移除該第一釋離襯墊以至少部分地曝露熱介面材料。該方法進一步包括將該熱介面材料塗覆至包括一電子構件或一熱耗散構件之一基板。
本發明之上文概述並不意欲描述本發明之每一實施例。在下文之描述中亦闡述本發明之一或多個實施例的細節。本發明之其他特徵、目標及優勢將自該描述及申請專利範圍顯而易見。
5‧‧‧主表面
10‧‧‧基板
20‧‧‧TIM區段
20a‧‧‧頂表面
20b‧‧‧側表面
110‧‧‧基層
120‧‧‧TIM區段
220‧‧‧TIM
240‧‧‧分段式TIM
G‧‧‧間隙
在結合隨附圖式考慮本發明之各種實施例的以下詳細描述後，可更全面地理解本發明，其中：圖1A至圖1B分別說明根據本發明之一些實施例的分段式TIM的示意性俯視圖及示意性側視圖。
圖2A至圖2B分別說明根據本發明之一些實施例的分段式TIM的示意性俯視圖及示意性側視圖。
圖3a至圖3b說明TIM之均勻薄片及分段式TIM分別在組件之間經由壓縮力的壓縮前後的示意性透視側視圖。
隨著電子裝置變得功能更強且以愈來愈小之封裝供應，此等裝置中之電子組件已變得較小且較密集地封裝於積體電路板及晶片上。為確保電子裝置可靠地操作，應有效地耗散由此等組件產生之熱。舉例而言，為增強傳導冷卻，電子組件可利用一熱管理材料作為熱產生電子組件(諸如，積體電路晶片)之配合表面與熱耗散構件(諸如，散熱 片或鰭式熱散播器)之配合表面之間的熱傳遞介面。定位於熱傳遞介面處之此等熱管理材料(在本文中被稱作熱介面材料(TIM))經設計以實質上消除電子組件與熱耗散構件之間的絕緣空氣，此情況可增強熱傳遞效率。
TIM之設計涉及固有矛盾。一方面，TIM必須可保形以適應熱源與散熱片之間的間隙之變化(例如，歸因於熱源及/或散熱片上之不平表面)。通常由聚合或寡聚流體或彈性體將可保形性提供給TIM。流體可係可聚合的，或在高於TIM之意欲使用溫度的溫度下可經歷熔融轉變。另一方面，該材料必須有效地傳導熱。然而，傾向於增強可保形性之材料通常擁有低熱導率(例如，約0.2W/mK)。因此，常常添加填料以增加熱導率。然而，在熱潤滑脂之狀況下，此等填料增加TIM之黏度，或在導熱墊之狀況下，此等填料增加TIM之模數，藉此減少可保形性。因此，可能需要具有可保形性與熱導率之間的最佳平衡的TIM。
定義
如本文中所使用，單數形式「一」及「該」包括複數形式，除非內容清楚地指示其他。除非內容清楚地指示其他，否則如本說明書及隨附實施例中所使用，術語「或」通常以其包括「及/或」之含義使用。
如本文中所使用，藉由終點敍述數值範圍包括彼範圍內所包含之所有數字(例如，1至5包括1、1.5、2、2.75、3、3.8、4及5)。
除非另外指示，否則應將說明書及實施例中所使用的表示量或成分、性質量度等之所有數字理解為在所有情形下均由術語「約」修飾。因此，除非相反地指示，否則前述說明書及實施例之隨附清單中所闡述之數值參數可取決於熟習此項技術者利用本申請案之教示設法獲得的所要性質而改變。絲毫不打算將等效原則之應用限於所主張實 施例的範疇，每一數值參數應至少根據所報導之有效數位的數目及藉由應用一般捨位技術來解釋。
在一些實施例中，本發明係關於以兩個或兩個以上區段提供之熱介面材料。大體而言，如下文將更詳細論述，本發明之分段式熱介面材料可適應TIM對待藉由TIM接合或連接之組件之配合表面的可保形性，同時亦促進組件之間的熱傳遞。
在各種實施例中，本發明進一步係關於一基板，該基板之一或多個表面(例如，主表面)上承載本發明之分段式熱介面材料。舉例而言，如圖1A至圖1B中所展示，基板10之主表面5上可已安置有橫向隔開之離散TIM區段20之陣列，使得TIM區段20界定在TIM區段20之間延伸的一或多個間隙或通道。如下文將更詳細論述，相比於TIM之習知均勻薄片，在壓縮組件之間的TIM之後，由本發明之分段式TIM提供的間隙可提供經改良之可壓縮性及可保形性。
在說明性實施例中，本發明之TIM可包括一可保形組件及分散於該可保形組件中之一熱傳導填料。
大體而言，可保形組件可具有至少部分地且非破壞性地符合施加壓縮力於可保形組件之表面的外形/形狀之能力。在一些實施例中，可保形組件可包括可變形或流動之任何材料。可保形組件可包括聚合或寡聚(或聚合或寡聚前驅體)流體或彈性體。可保形組件可包括黏彈性材料。可保形組件可包括聚矽氧、丙烯酸系樹脂、環氧樹脂類及其混合。可保形組件可包括黏著劑(例如，壓敏黏著劑)、熱傳導潤滑脂或其組合。用於本發明之方法中的壓敏黏著劑可包括(但不限於)天然橡膠、苯乙烯丁二烯橡膠、腈橡膠、苯乙烯-異戊二烯-苯乙烯(共)聚合物、苯乙烯-丁二烯-苯乙烯(共)聚合物、包括(甲基)丙烯酸(共)聚合物之苯乙烯-丙烯腈(共)聚合物聚丙烯酸酯、包括混合有液態/半固態環氧樹脂之丙烯酸聚合物的環氧丙烯酸酯、丙烯酸胺基甲酸 酯、諸如聚異丁烯及聚異戊二烯之聚烯烴、聚胺基甲酸酯、聚乙烯基乙醚、聚矽氧烷、聚矽氧、聚胺基甲酸酯、聚脲，及其摻合物。在一些實施例中，TIM區段20中之每一者可由相同材料(或材料之組合)構成。替代性地，TIM區段20中之一或多者可由相對於一或多個其他TIM區段20不同之材料(或材料之組合)構成。
在說明性實施例中，分散於可保形組件中之熱傳導填料可包括(但不限於)金剛石、多晶金剛石、碳化矽、氧化鋁、氮化硼(六角形或立方形)、碳化硼、二氧化矽、石墨、非晶形碳、氮化鋁、鋁、氧化鋅、鎳、鎢、銀及其組合。熱傳導填料可呈粒子、纖維、片狀、其他習知形式或其組合的形式。熱傳導填料可以至少10重量%之量存在於TIM中。在其他實施例中，熱傳導填料可以至少20、30、40、50、60、70、80、90、95、96、97或98重量百分比之量存在。在其他實施例中，熱傳導填料可以不超過99、95、90、85、70或50重量百分比之量存在於TIM中。在一些實施例中，TIM區段20中之每一者可具有相同填料及填料之相同裝載。替代性地，TIM區段20中之一或多者相對於一或多個其他TIM區段20可具有不同填料、填料之不同裝載或該兩者。
在各種實施例中，上面安置有TIM區段之陣列之基板可為剛性的或可撓性的。基板可至少具有足以自撐之機械完整性。基板可基本上僅由一材料層組成，或基板可具有多層構造。基板可具有任何形狀及厚度。
如熟習此項技術者將瞭解，本發明之分段式TIM可製造成包括分段式TIM之帶狀或薄片狀構造之形式，以作為內部釋離襯墊與外部釋離襯墊(該等釋離襯墊中之任一者或兩者可具有安置於釋離襯墊之一或多個主表面上的脫模塗層)之間的夾層。就此而言，在一些實施例中，上面或上方可安置有本發明之分段式TIM的基板可包括釋離襯 墊。合適釋離襯墊基板之實例包括紙(例如，聚乙烯塗佈之牛皮紙)及聚合薄膜(例如，聚乙烯對苯二甲酯、諸如聚乙烯及聚丙烯之聚烯烴，及聚萘二甲酸伸乙酯)。合適脫模塗層之實例包括(但不限於)聚矽氧、碳化氟、包括(例如)聚乙烯及聚丙烯之聚烯烴、丙烯酸系樹脂及其組合。
一旦移除內部釋離襯墊，分段式TIM可接合至散熱片或電子組件以形成總成，而外部釋離襯墊可保持在適當位置中以作為分段式TIM上方之保護罩。隨後，在將總成安裝於電子裝置中之前，可移除外部釋離襯墊以曝露分段式TIM。就此而言，在各種實施例中，上面或上方可安置有本發明之分段式TIM的基板可包括散熱片及/或電子組件。
在一些實施例中，基板可為來自如下各者中之塑膠基板：聚烯烴(例如聚丙烯(PP))、各種聚酯(例如，聚對苯二甲酸伸乙酯(PET)、聚甲基丙烯酸甲酯(PMMA))及諸如聚萘二甲酸伸乙酯(PEN)、聚醚碸(PES)、聚碳酸酯(PC)、聚醚醯亞胺(PEI)、聚芳酯(PAR)、聚醯亞胺(PI)、聚胺基甲酸酯(PU)、多聚矽氧的其他聚合物，或其組合。替代性地，基板可為金屬(例如，Al、Cu、Ni、Ag、Au、Ti及/或Cr)、金屬氧化物、玻璃、複合物、紙、織物、不織布或其組合。
再次參看圖1至圖2，大體而言，每一TIM區段20可包括：z維度或高度h，其大體上自基板10之主表面5沿著z方向延伸；x維度或寬度w，其大體上沿著實質上正交於沿著(或實質上平行於)主表面5延伸之z維度定向的x方向延伸；及y維度或長度l，其大體上沿著實質上正交於沿著(或實質上平行於)主表面5延伸之x維度定向的y方向延伸。雖然圖1至圖2說明特定數目個TIM區段，但應瞭解，可提供任何數目個TIM區段(多於或少於圖1至圖2中所描繪之TIM區段)。
大體而言，TIM區段20之高度、長度及寬度可為任何所要量值且可經選擇以適應任何特定應用。個別TIM區段20之高度、長度及寬度 在整個陣列中可相同，或可在整個陣列中改變。在一些實施例中，TIM區段20之平均高度可為至少0.5μm、至少1μm或甚至至少5μm；TIM區段20之平均高度可不大於50mm、不大於25mm或甚至不大於10mm；TIM區段20之平均長度可為至少0.5μm、至少1μm或甚至至少5μm；TIM區段20之平均長度可不大於25mm、不大於10mm或甚至不大於1mm，TIM區段20之平均寬度可為至少0.5μm、至少1μm或甚至至少5μm；且TIM區段20之平均寬度可不大於25mm、不大於10mm或甚至不大於1mm。
如圖1至圖2中所展示，TIM區段20可形成為具有頂表面20a及複數個側表面20b之大體上矩形結構。然而，應注意，TIM區段20無需具有圖1中所展示之形狀。實情為，TIM區段20可具有多種形狀(包括三維或截面形狀)，包括(但不限於)圓柱形、錐形、矩形、三角形及卡鉤形、平行六面體形、球形、半球形、多角形、圓錐形、截頭圓錐形、其他合適形狀及其組合。應進一步注意，TIM區段20可呈包括z維度以及x維度及/或y維度之軌條或壁的形式。亦應注意，頂表面20a及側表面20b可包括平坦表面(如圖1A至圖1B中所展示)、弓形表面或其組合。舉例而言，在一些實施例中，TIM區段20中之一或多者(直至全部)可具有弓形、圓頂狀或尖銳之頂表面20a。以此方式塑形之頂表面20a可允許與壓縮分段式TIM之組件表面(例如，散熱片或熱源之表面)之初始「點接觸」，藉此在組件之附接或接合期間促進空氣抽空。在說明性實施例中，陣列之TIM區段20中之每一者可具有相同形狀(或實質上相同之形狀)，或形狀可在整個陣列中改變，且以任何數目個前述組態或前述組態之組合形成。
仍參看圖1至圖2，在各種實施例中，TIM區段20可在y方向上相對於彼此以間隙距離G1橫向隔開且在x方向上以間隙距離G2橫向隔開，以界定在鄰近TIM區段之間延伸的一或多個間隙G。大體而言， 間隙距離G1及G2可經選擇以在TIM於組件之附接或接合期間被壓縮時為TIM 20提供可變流動空間。可至少部分地基於如下各者中之任一者或全部來判定間隙距離G1及G2：(i)待由TIM區段接合或連接之材料的類型；(ii)待由TIM區段附接或接合之組件的大小(例如，重量)；(iii)TIM區段之組成(例如，TIM材料之固有可壓縮性)；(iv)TIM之大小(例如，高度、長度、寬度)；及(v)待由TIM接合或連接之基板的表面輪廓(例如，粗糙度及平坦度偏差)。間隙距離G1及/或G2對於鄰近TIM區段20之每一集合可相同，或可在整個陣列中以任何所要方式改變。就此而言，本發明之TIM區段20可安置成多種配置，包括在整個圖案中具有恆定或可變間隙距離G1及G2之規則圖案或陣列，或不規則或隨機之配置。在說明性實施例中，陣列之平均間隙距離G1及/或G2可小於25mm、小於10mm或甚至小於1mm；且陣列之平均間隙距離G1及/或G2可為至少5μm、至少10μm或甚至至少100μm。
除了在接合或附接期間促進熱介面處之空氣移除以外，本發明之分段式TIM亦可促進TIM之可壓縮性及/或可保形性。在各種實施例中，TIM區段20之間的間隙G1及G2之深度或高度(且因此，TIM區段20之高度)以及間隙G1及G2之寬度可經選擇以允許分段式TIM 20的所要量之可壓縮性及/或可保形性。就此而言，取決於分段式TIM 20的所要量之可壓縮性及/或可保形性，TIM 20之寬度對厚度及/或長度對厚度之平均縱橫比可經選擇而在1：10與20：1、1：10與10：1、1：5與10：1或甚至1：2與5：1之範圍內。進一步就此而言，取決於分段式TIM 20的所要量之可壓縮性及/或可保形性，一陣列的間隙對該陣列之TIM區段的平均體積比可經選擇而在1：10與10：1、1：5與5：1或甚至1：3與3：1之範圍內。
現參看圖2A至圖2B，分別說明根據本發明之另一實施例的分段式TIM之示意性俯視圖及側視圖。圖2A至圖2B之分段式TIM共用上文 參考圖1A至圖1B所說明之實施例所描述的相同元件及特徵中之多者。為較完整地描述圖2A至圖2B中所說明之實施例的特徵及元件(及此等特徵之替代例)，參考上文伴隨圖1A至圖1B之描述。
如圖2A至圖2B中所展示，在各種實施例中，本發明係關於以基層110及自基層110大體上沿著z方向延伸的兩個或兩個以上TIM區段120之形式提供的分段式TIM。如同先前實施例，TIM區段120可具有高度h。基層110可包括大體上沿著z方向延伸之z維度或高度h'。基層110之高度h'可為至少0.5μm、至少1μm或甚至至少5μm；基層110之高度h'可不大於5mm、不大於2.5mm或甚至不大於1mm。雖然將基層110描繪為具有近似恆定之高度h'，但應理解，此參數可在整個TIM中無變化且無需在整個TIM上方為恆定或固定之距離。另外，雖然圖2A至圖2B描繪安置於基板10之主表面5上的TIM區段120及基層110，但應理解，TIM區段120及基層110可與基板10分開地提供。
仍參看圖2A至圖2B之實施例，在一些實施例中，基層110可由與區段120中之一或多者(直至全部)相同之材料(或材料之組合)形成，或基層110可由(例如，就可保形組件材料、傳導填料及/或傳導填料之裝載而言)不同於TIM區段120中之一或多者(直至全部)之材料的材料形成。基層110可與區段120一體式形成，或可經由合適連接機制(例如，黏著劑)耦接至該等區段。雖然圖2A至圖2B描繪僅在基層110之一側上的TIM區段120，但應瞭解，可在基層110之兩側上提供TIM區段120。另外，應瞭解，關於TIM區段20之組態(例如，大小、形狀、間隙距離等)的上文論述同等效力地適用於TIM區段120。
在一些實施例中，結合先前所描述之實施例中的任一者，提供於TIM區段20、120之陣列之間及之中的間隙G中之一或多者(直至全部)可至少部分地填充有流體。大體而言，可將黏度比形成TIM區段20、120之材料低的任何流體用作為間隙填充流體。合適的間隙填充 流體可包括空氣、液態黏著劑、有機液態潤滑脂、非導電氟化物溶液或其組合。在各種實施例中，間隙填充流體包含除空氣外之流體。間隙填充流體可填充間隙G之體積的任何部分(直至全部)。間隙G中之每一者可具備相同間隙填充流體及/或填充位準(filling level)，或可具備不同填充流體及/或填充位準。大體而言，可提供間隙填充流體以藉由使在待由TIM接合或連接之組件之間的壓縮之後而仍保持於TIM中的間隙G(亦即，空隙)之任何部分之熱導率增加來改良分段式TIM之熱傳遞效率。
大體而言，可基於TIM之熱導率(k)、TIM散佈於基板表面上方且接觸基板表面之能力(「浸透性(wet-out)」)，及TIM在熱傳遞方向上之厚度(熱傳遞與厚度成反比)來判定給定應用中的TIM之熱傳遞效率。
在一些實施例中，本發明之分段式TIM可提供可保形性與熱導率之實質上改良之組合。舉例而言，如熟習此項技術者將瞭解，本文中所描述之分段式設計可將有效之較低彈簧常數(k')賦予TIM(相對於均勻或實質上均勻之薄片中的相同材料)。因此，對於施加至給定TIM之相同壓力，本發明之分段式TIM將展現增加之壓縮，從而導致熱傳遞介面處的減少之TIM厚度且反而導致改良之熱傳遞效率。可參看圖3a及圖3b觀察此概念，圖3a及圖3b說明相同材料之TIM 220之均勻薄片及分段式TIM 240分別在組件250、260之間經由壓縮力F的壓縮前後之透視側視圖。如圖3a中所展示，最初，TIM 220及分段式TIM 240具有相同厚度t 1 。然而，如圖3b中所展示，在施加相同壓縮力F之後，歸因於有效之較低彈簧常數，分段式TIM 240之厚度t 2 小於TIM 220之厚度t 3 。作為此減少之厚度之結果，分段式TIM 240之理論熱傳遞效率優於TIM 220之均勻薄片之理論熱傳遞效率。
除提供較低之有效彈簧常數(k')外，本發明之分段式TIM亦可適 應TIM對不平表面的增加之可保形性。具體而言，由分段式設計提供之開放區域或間隙可為經受大於其他TIM區段所經受之壓縮力的該陣列之任何TIM區段提供可變流動空間。如先前所論述，歸因於(例如)待由TIM接合或連接的熱源上之不平表面及/或散熱片表面，TIM所經歷之壓縮的此變化係常見的。熟習此項技術者將瞭解，此可變流動空間允許TIM之較大可壓縮性/可保形性且反而使TIM與組件表面之間的表面接觸增加，藉此改良熱傳遞效率。作為此情況之一實例，假定本發明之分段式TIM將在具有大體上凹形之表面輪廓的組件表面(例如，熱產生電子組件及熱耗散構件之表面)之間壓縮。在此情境下，歸因於不平/凹形之表面輪廓，在組件之間的壓縮之後，該陣列的外部或周邊TIM區段將經受比中間區段之壓縮力大的壓縮力。作為由分段式設計提供之可變流動空間的結果，提供此等外部TIM區段之較大可壓縮性。因此，內部TIM區段較可能與凹形表面之中間凹陷區域嚙合，從而導致TIM與不平組件表面的總體增加之表面嚙合。以此方式，進一步增強本發明之分段式TIM的熱傳遞效率。
本發明進一步係關於製造上述分段式TIM的方法。在一些實施例中，可藉由將一TIM澆鑄至一模具中來製造分段式TIM，如上所述，該TIM可包括一可保形組件及熱傳導粒子。該模具可經組態以使該TIM具備一所要區段圖案(例如，TIM區段之數目；TIM區段之高度、長度及寬度；間隙距離)。接下來，可視情況將一基板(例如，釋離襯墊)應用於該模具。接著，可自該模具移除該TIM以產生視情況安置於一基板上或上方的分段式TIM。隨後，視情況，可利用任何習知流體沈積技術用一流體至少部分地填充提供於TIM區段之間及之中的間隙中之一或多者。視情況，接著可對置第一基板而將第二基板(例如，釋離襯墊)應用於分段式TIM。最後，可將分段式TIM及可選基板轉換成包括薄片、卷、墊子或類似者的任何所要形式。
在各種實施例中，上述模具可充當基板及模製表面兩者。舉例而言，可模製(例如，壓縮模製)聚合薄膜以在至少一表面上形成所要圖案，且接著可將TIM填充至彼表面中。該模具可重新用作為製造部件或可由終端使用者移除。用於生產該模具/基板之合適方法可包括鑄造及固化、熱成形、擠壓鑄造、壓印及其類似方法。用於該模具/基板之合適材料包括(例如)熱固性或熱塑性聚合物，包括丙烯酸酯、包括聚乙烯、聚丙烯之聚烯烴、聚乳酸及PHA。
在另外實施例中，可以任何習知方式將分段式TIM應用至基板或襯墊上，例如，藉由諸如噴塗、浸漬、鑄造或擠壓、刮刀、滾筒、凹板、線條或轉鼓塗佈之直接法。接著可藉由(例如)機械加工、刮削、蝕刻、電暈放電(coronal discharge)或其他手段來移除TIM之部分以形成分段式TIM。在又一實施例中，可利用任何合適印刷技術(例如，網版印刷)來形成分段式TIM。
本發明進一步係關於製造電子裝置之方法。在一分段式TIM係安置於一第一釋離襯墊與一第二釋離襯墊之間的實施例中，可至少部分地剝除該第一釋離襯墊以曝露該分段式TIM之至少一區。在某些實施例中，該第一釋離襯墊可自該TIM乾淨地剝離而在該第一釋離襯墊之釋離表面上殘留有極少材料或無材料殘留。接下來，可將該分段式TIM之曝露表面應用於一第一基板上(諸如，電子組件或熱耗散構件)以形成一電子總成。此時，可將輕度壓力施加至TIM，以確保TIM已浸潤基板，及可能至移除截留於TIM與該第一基板之間的任何空氣之程度。在該電子總成中，第二釋離襯墊可在分段式TIM上方保持完整以保護TIM且防止污染，直至該總成準備好附接至第二基板(例如，另一電子組件)為止。接著可藉由剝除掉第二釋離襯墊之至少一部分及曝露TIM之至少一區而使該總成準備好附接至第二基板。如同第一釋離襯墊，第二釋離襯墊之釋離表面可自TIM乾淨地剝離而在第二釋 離襯墊上殘留有極少材料或無材料殘留。接著可將TIM定位於第一基板與第二基板之間的介面處以形成一電子裝置。
本發明之分段式TIM的特定應用包括(但不限於)將微電子晶粒或晶片附接至電子裝置中之至少一熱耗散構件。例示性電子裝置包括功率模組、IGBT、DC-DC轉換器模組、固態繼電器、二極體、發光二極體(LED)、功率MOSFET、RF組件、熱電模組、微處理器、多晶片模組、ASIC或其他數位組件、功率放大器或電源供應器。
5‧‧‧主表面
10‧‧‧基板
20‧‧‧TIM區段
G‧‧‧間隙

Claims (17)

  1. 一種熱介面材料，其包含：一可保形組件；及分散於該可保形組件中之一熱傳導填料；其中在彼此橫向隔開之至少兩個區段中提供該材料以界定一或多個間隙，該等區段中之每一者具有一長度、一寬度及一高度；且其中該至少兩個區段之長度對高度及/或寬度對高度之平均縱橫比介於1：10與10：1之間。
  2. 如請求項1之熱介面材料，其中該至少兩個區段之長度對高度及/或寬度對高度之該平均縱橫比介於1：2與5：1之間。
  3. 如請求項1至2中任一項之熱介面材料，其中該至少兩個區段之該平均高度為至少0.5μm。
  4. 如請求項1至2中任一項之熱介面材料，其中該可保形組件包含一聚合或寡聚流體或彈性體。
  5. 如請求項1至2中任一項之熱介面材料，其中該可保形組件包含一壓敏黏著劑。
  6. 如請求項1至2中任一項之熱介面材料，其中該傳導填料包含金剛石、多晶金剛石、碳化矽、氧化鋁、氮化硼(六角形或立方形)、碳化硼、二氧化矽、石墨、非晶形碳、氮化鋁、鋁、氧化鋅、鎳、鎢、銀或其組合。
  7. 如請求項1至2中任一項之熱介面材料，其中該傳導填料以基於組合物之總重量的至少50重量%之一量存在。
  8. 如請求項1至2中任一項之熱介面材料，其中該材料包含一基層，且其中該至少兩個區段大體上以一第一方向自該基層延 伸。
  9. 如請求項8之熱介面材料，其中該基層在該第一方向上之一高度介於1μm與1mm之間。
  10. 如請求項1至2中任一項之熱介面材料，其中除空氣之外之一流體至少部分地填充該等間隙中之一或多者。
  11. 一種物品，其包含：具有一主表面之一基板；其中如請求項1至10中任一項之熱介面材料係安置於該主表面上或上方。
  12. 如請求項11之物品，其中該基板包含一釋離襯墊。
  13. 如請求項11之物品，其中該基板包含一熱產生電子組件或一熱耗散構件。
  14. 一種物品，其包含：包含一第一釋離表面之一第一釋離襯墊；及包含一第二釋離表面之一第二釋離襯墊；其中如請求項1至10中任一項之熱介面材料係安置於該第一釋離表面與該第二釋離表面之間。
  15. 一種用於製造一熱介面材料之方法，該方法包含：提供一熱介面材料，該熱介面材料包含一可保形組件及熱傳導粒子；將該熱介面材料澆鑄至一模具中，其中該模具經組態以使該熱介面材料具備一圖案，藉以在彼此橫向隔開之至少兩個區段中提供該熱介面材料以界定一或多個間隙，該等區段中之每一者具有一長度、一寬度及一高度，且其中該至少兩個區段之長度對高度及/或寬度對高度之平均縱橫比介於1：10與10：1之間； 自該模具移除該熱介面材料。
  16. 如請求項15之方法，其進一步包含將一基板應用於該模具之步驟。
  17. 一種用於製造一電子裝置之方法，該方法包含：提供一物品，其包含：包含一第一釋離表面之一第一釋離襯墊，及包含一第二釋離表面之一第二釋離襯墊，其中如請求項1至10中任一項之熱介面材料係安置於該第一釋離表面與該第二釋離表面之間；移除該第一釋離襯墊以至少部分地曝露熱介面材料；及將該熱介面材料塗覆至包含一電子構件或一熱耗散構件之一基板。
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TWI783910B (zh) * 2016-01-15 2022-11-21 荷蘭商庫力克及索發荷蘭公司 放置超小或超薄之離散組件

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