TW201420794A - Al alloy film for anode electrodes of organic el elements, organic el element and al alloy sputtering target - Google Patents

Abstract

An Al alloy film for anode electrodes of organic EL elements, which is characterized by containing one or more elements that are selected from the group consisting of Si, Ge, Bi, In, Sn and Zn, while containing from 0.2 atom% to 5.0 atom% (inclusive) of a rare earth element and/or a high melting point metal. This Al alloy film for anode electrodes of organic EL elements is also characterized by having a work function of 4.5 eV or more.

Description

Al alloy film for anode electrode of organic electric excitation element, organic electric excitation element and Al alloy sputtering target

The present invention relates to an Al alloy film for an anode electrode, an organic electroluminescence device, and an Al alloy sputtering target for an organic electroluminescence device, and is, for example, used in an organic electroluminescence display or an organic electroluminescence illumination. An Al alloy film of an anode electrode of an electromechanical excitation element, an organic electroluminescence element using the Al alloy film for an anode electrode, and an Al alloy sputtering target for forming the Al alloy film.

The organic electroluminescent material is a self-luminous body. The display device or the light-emitting device is designed using the light emission of the organic electroluminescent material.

Figure 1 reveals the construction of a typical organic electroluminescent device. As shown in FIG. 1 , in the organic electroluminescence device, an organic layer (organic light-emitting layer) sandwiched between a cathode electrode and an anode electrode is provided on a substrate, and the laminate is protected from external factors such as oxygen or water in order to protect the laminate. And made a sealed structure.

The light emitted by the organic electroluminescent device is carried out in the organic layer by electrons and holes applied from the cathode electrode and the anode electrode (organic hair In the light layer, recombination occurs, and energy is emitted in the form of light.

In order to cause the above-described luminescence phenomenon, it is necessary to inject electrons into the LUMO orbital of the material constituting the organic layer as the cathode electrode. Therefore, a material having a small work function is generally used. On the other hand, in the anode electrode, it is necessary to inject a hole into the HOMO orbital of the material constituting the organic layer, and therefore it is necessary to use a material having a large work function.

In the above-mentioned anode electrode, Patent Document 1 uses a noble metal alloy film containing Ag, Pd or Cu, or a transparent conductive film (oxide conductive film) such as an ITO film or an IZO film. However, since the above Ag or Pd is a noble metal, the material cost is high. Further, since the ITO film or the IZO film of the transparent conductive film also contains a rare metal In, the cost is high. Therefore, in order to reduce the manufacturing cost of the organic electroluminescent device, it is sought to realize the anode electrode with a low-cost material.

As the above-mentioned low-priced material, an Al-based material can be exemplified. For example, in Patent Document 2, an Al-Nd alloy is used as the anode electrode.

Prior technical literature

Patent literature

Patent Document 1: Japanese Patent Laid-Open Publication No. 2003-77681

Patent Document 2: Japanese Patent Laid-Open Publication No. 2006-79836

However, the structure disclosed in Patent Document 2, as the organic layer, requires another layer (hole injection layer) in addition to the layer related to light emission. Therefore, it is expected that the manufacturing cost will become higher.

The present invention has been developed in view of the above various aspects, and aims to find a film which is an anode electrode of an organic electroluminescence element, and which can use a low-cost Al-based material from the viewpoint of productivity, and adopts a composition of a conventional organic layer. (that is, a layer which is unnecessary as the above-mentioned Patent Document 2 is not required as the organic layer), and sufficient hole injection characteristics (high work function) and sufficient hole injection characteristics (high work function) are not used even if a transparent conductive film (oxide conductive film) such as ITO is not used. As a characteristic of the electrode (low resistivity).

The present invention provides an Al alloy film for an anode electrode of an organic electroluminescence device, an organic electroluminescence device, an organic electroluminescence display, an organic electroluminescence illumination, and an Al alloy sputtering target.

(1) An Al alloy film for an anode electrode of an organic electroluminescence device, which comprises one or more elements selected from the group consisting of Si, Ge, Bi, In, Sn, and Zn, and contains 0.2 or less At least one of a rare earth element and a high melting point metal having an atomic % or more and 5.0 atomic % or less and a work function of 4.5 eV or more.

(2) The Al alloy film according to the above aspect, wherein at least one of the rare earth element and the high melting point metal is one or more elements selected from the group consisting of Nd, Ti, and Ta.

(3) The Al alloy film according to (2), wherein the rare earth element and At least one of the high melting point metals is Nd.

(4) An organic electroluminescence device comprising an organic layer and an anode electrode directly connected to the organic layer, wherein the anode electrode is composed of (1) to (3) One of the described Al alloy films.

(5) An organic electroluminescence display comprising the organic electroluminescence element according to (4).

(6) An organic electroluminescence illumination device comprising the organic electroluminescence device according to (4).

(7) An Al alloy sputtering target material, which is an Al alloy sputtering target material for forming the Al alloy film according to any one of (1) to (3), which is characterized by containing Si, Ge, and Bi One or more elements selected from the group consisting of In, Sn, and Zn contain at least one of 0.2 atom% or more and 5.0 atom% or less of a rare earth element and a high melting point metal.

According to the present invention, it is possible to provide an Al alloy film suitable for an anode electrode of an organic electroluminescence element by using a low-cost Al-based material. As a result, it is not necessary to use a conventionally used oxide conductive film (such as an ITO film) as the anode electrode, and it is not necessary to add an unnecessary organic layer as in the above-mentioned Patent Document 2, and a low-cost organic electroluminescent device can be realized. . Therefore, an organic electroluminescence display, an organic electroluminescence illumination, or the like excellent in light-emitting luminance characteristics can be manufactured at low cost.

1‧‧‧Substrate

2‧‧‧Anode electrode (Al alloy film)

3‧‧‧Organic layer (organic light-emitting layer)

4‧‧‧Cathode electrode

5‧‧‧ Sealing material

Fig. 1 is a schematic explanatory view of an organic electroluminescence device.

In order to solve the aforementioned problems, the present invention has repeatedly focused on research to realize an anode which is directly connected to an organic layer in an organic electroluminescent device and exhibits a high work function and high reflectance with an Al-based material having a low material cost. electrode. As a result, it is found that the Al alloy film constituting the anode electrode satisfies (1) one or more elements selected from the group consisting of Si, Ge, Bi, In, Sn, and Zn, and (2) The rare earth element and/or the high melting point metal of 0.2 atom% or more and 5.0 atom% or less, and (3) the work function is 4.5 eV or more, and the present invention has been completed.

Hereinafter, the component composition of the Al alloy film will be described first.

Si, Ge, Bi, In, Sn, and Zn (hereinafter referred to as "X group elements") of the above (1) are diffused and concentrated on the surface of the Al alloy film. The X group element concentrated on the surface of the Al alloy film is oxidized, and as a result, the surface of the Al alloy film is covered with the oxide of the above X group element, whereby the work function becomes large.

In order to exhibit the above effects, when Bi is contained as the X group element, the amount of Bi is preferably 0.1 atom% or more, more preferably 0.3 atom% or more, more preferably 0.5 atom% or more, still more preferably 1.0. More than atomic %. On the other hand, when Bi is excessively contained, film peeling easily occurs, so that it is preferably 2 atom% or less, more preferably 1.5 atom% or less.

In addition, when the elements other than Bi (Si, Ge, In, Sn, and Zn) are contained in the X group element, the content thereof (inclusively, it means a separate amount, and contains two or more types). The time ratio means that the total amount is preferably 1 atom% or more, more preferably 3 atom% or more. On the other hand, if these elements are too much, the electrical resistivity will increase, and the characteristics as an electrode will deteriorate. Therefore, the upper limit of the content of these elements may vary slightly depending on the elements, but it is preferably 25 atom% or less, more preferably 20 atom%.

The rare earth element and/or the high melting point metal (hereinafter referred to as "rare earth element" or the like) of the above (2) are elements which contribute to the refinement of Al crystal grains. When the Al crystal grains are refined, the grain boundary of the Al crystal grains increases, and the migration path of the above X group elements increases. As a result, it is considered that the X group element efficiently migrates on the surface of the Al alloy film and promotes concentration of the X group element.

In order to exhibit such an effect, the content of the rare earth element or the like is set to 0.2 atom% or more. It is preferably 0.5 atom% or more. On the other hand, when the content of the rare earth element or the like exceeds 5.0 atomic %, the electrical resistivity increases, and the characteristics as an electrode deteriorate. Therefore, the content of the rare earth element or the like is set to be 5.0 atom% or less. It is preferably 3.0 atom% or less.

Here, the "content of the rare earth element or the like" is preferably at least one high melting point metal selected from the group consisting of the following elements, and/or preferably selected from the group consisting of the following elements. At least one rare earth element, when it is contained alone, means a single amount, and when it contains two or more types, it means a total amount.

The preferred high-melting-point metal used in the present invention is at least one element selected from the group consisting of Ti, Fe, Ta, and Mn. In addition, the rare earth element used in the present invention may be at least one selected from the group consisting of lanthanoid elements (15 elements up to La) and Sc (钪) and Y (钇).

Among the above-mentioned rare earth elements and the like, one or more elements selected from the group consisting of Nd, Ti, and Ta are preferable, and a sputtering target is easily produced, and Nd is more preferable.

As described above, the Al alloy film of the present invention contains a group X element and contains a predetermined amount of a rare earth element, and the remainder is Al and an unavoidable impurity. The unavoidable impurities include elements which may be inevitably mixed in the production process of the Al alloy film, such as Fe, Si, B, C, O, N, etc., and the content thereof is preferably 0.12 for Fe and Si, respectively. Atom% or less and other inevitable elements are set to 0.05 atom% or less.

In the case where Nd is used as the rare earth element or the like, that is, in the case of an Al-X group element-Nd film, a preferred range of the amount of each X group element is as follows.

First, in the case where the X group element = Si, that is, the Al-Si-Nd film, the amount of Si is preferably 1 atom% or more and 20 atom% or less. As long as the amount of Si is 1 atom% or more, Si can be sufficiently diffused on the surface to increase the work function. More preferably, it is 2 atom% or more, and still more preferably 4 atom% or more. On the other hand, when the amount of Si is too large, the electrical resistivity increases, and the characteristics as an electrode deteriorate. Therefore, the amount of Si is preferably set to be 20 atom% or less, more preferably 15 atom% or less.

In the case where the X group element = Ge, that is, the Al-Ge-Nd film, the amount of Ge is preferably 1 atom% or more and 25 atom% is not full. As long as the amount of Ge is 1 atom% or more, Ge can be sufficiently diffused on the surface to increase the work function. More preferably, it is 3 atom% or more. On the other hand, if the amount of Ge is too large, the specific resistance increases, and the characteristics as an electrode deteriorate. Therefore, the amount of Ge is preferably 25 atom% or less, more preferably 15 atom% or less, still more preferably 10 atom% or less.

In the case where the X group element = Bi, that is, the Al-Bi-Nd film, the amount of Bi is preferably 0.3 atom% or more and 2 atom% is not full. When the amount of Bi is 0.3 atom% or more, Bi can be sufficiently diffused on the surface to increase the work function. On the other hand, if the amount of Bi is too large, the film will be easily peeled off. Therefore, the amount of Bi is preferably set to 2 atom% or less, more preferably 1.5 atom% or less.

In the case where the X group element = Zn, that is, the Al-Zn-Nd film, the amount of Zn is preferably 1 atom% or more and 20 atom% or less. As long as the amount of Zn is 1 atom% or more, Zn can be sufficiently diffused on the surface to increase the work function. More preferably, it is 3 atom% or more. On the other hand, when the amount of Zn is too large, the electrical resistivity increases, and the characteristics as an electrode deteriorate. Therefore, the amount of Zn is preferably set to be 20 atom% or less, more preferably 15 atom% or less.

The grain boundaries of In and Sn in Al easily diffuse and have a low melting point, so it is expected to exhibit the same behavior as Zn. Therefore, the preferred range of each of the amount of In and the amount of Sn is set to the same value as the above Zn. That is, in the case of the Al-In-Nd film, the amount of In is preferably 1 atom% or more (more preferably 3 atom% or more), and 20 atom% or less (more preferably 15 atom% or less). Further, in the case of the Al-Sn-Nd film, the amount of Sn is preferably 1 atom% or more (more preferably 3 atom% or more), 20 atom% or less (more preferably 15 atom% or less).

Further, when the rare earth element or the like is Nd and contains two or more types of X group elements, that is, in the case of Al-(multiple X group elements)-Nd film, any one of the plurality of X group elements is X group The element may be in the range of the amount of the X group element in the case where the above-described Al-X group element-Nd film is satisfied.

In the present invention, the anode electrode directly connected to the organic layer is formed of the above-described Al alloy film without using a transparent conductive film such as ITO, and the Al alloy film is bonded to the organic layer as in the above (3). The viewpoint of electrical connection is to show that the work function is 4.5 eV or more. The work function is preferably 4.8 eV or more. In addition, there is no upper limit to the work function. Even if the work function of the Al alloy film is large, it does not cause an obstacle to the electrical connection with the organic layer.

Further, regarding the measurement of the work function, the work function of the surface of the Al alloy film (the surface exposed to the outside atmosphere) can be measured by a work function measuring device (model: AC-2) manufactured by Riken Keiki Co., Ltd. Further, since the work function is sensitive to the surface state (organic matter contamination in the atmosphere, etc.), it is preferred to carry out UV irradiation immediately before the measurement of the above AC-2 to wash the surface of the Al alloy film. The UV irradiation described above can be carried out by using a UV irradiation device (Model: DUV-800-6) manufactured by GS YUASA Co., Ltd., and irradiating the lamp at a lamp voltage of 300 V for 1 minute.

In the Al alloy film of the present invention, by containing a predetermined element (particularly, an X group element), as described above, the X group element is diffused on the surface of the Al alloy film and oxidized, and an oxide is formed on the surface of the Al alloy film. borrow This work function will increase.

The oxidation method of the X group element is not particularly limited, and may be natural oxidation. However, in order to promote diffusion or oxidation of the surface of the Al alloy film, it is preferred to carry out heat treatment under the following conditions. That is, it is preferably carried out under the following conditions: environment: nitrogen atmosphere or atmospheric environment, heating temperature = 150 ° C to 350 ° C, heating time: 30 minutes to 1.5 hours. In the case where the heat treatment is performed in the above nitrogen atmosphere, among the X group elements, for example, Si, Ge, and Zn, it is considered that the diffusion of the surface of the Al alloy film is particularly promoted by the heat treatment.

The heating temperature is preferably set to 150 ° C or higher, and more preferably 200 ° C or higher as described above in order to promote the above diffusion or oxidation. On the other hand, if the heating temperature is too high, migration of Al occurs. Therefore, it is preferably 350 ° C or lower, more preferably 300 ° C or lower, and still more preferably 250 ° C or lower as described above. Further, in order to promote the above diffusion or oxidation, the heating temperature is preferably set to 30 minutes or longer, more preferably 45 minutes or longer as described above. On the other hand, if the heating time is too long, the productivity is lowered, so it is set to be 1.5 hours (90 minutes) or less, more preferably 75 minutes or less as described above.

The heat treatment of the Al alloy film may be carried out for the purpose of diffusion or oxidation, or may be a heat history after the formation of the Al alloy film, and satisfy the environment, the heating temperature, and the heating time.

Examples of the method for forming the Al alloy film include a sputtering method, a vacuum deposition method, and the like. In the present invention, it is possible to make the film thickness uniform and group From the viewpoint of forming a film with good uniformity or from the viewpoint of easily controlling the amount of added elements, it is preferred to form an Al alloy film by a sputtering method.

The conditions (film formation conditions) of the sputtering method are not particularly limited. For example, the following conditions are employed by way of example.

. Substrate temperature: room temperature ~ 50 ° C

. Ultimate vacuum: 1 × 10 ^-5 Torr or less (1.3 × 10 ^-3 Pa or less)

. (Ar) gas pressure at the time of film formation: 1 to 4 mTorr

. DC sputtering power density (DC sputtering power per unit area of target): 1.0~20W/cm ²

The above-described Al alloy film is formed by a sputtering method, and the sputtering target used in the sputtering method may be one or more selected from the group consisting of Si, Ge, Bi, In, Sn, and Zn. The element contains a rare earth element of 0.2 atom% or more and 5.0 atom% or less and/or a high melting point metal, and the remainder is an Al alloy sputtering target having the same composition as Al and an unavoidable impurity. As long as the Al alloy sputtering target is used, there is no fear of composition variation, and an Al alloy film having a desired composition can be formed.

The shape of the Al alloy sputtering target is processed into an arbitrary shape (square plate shape, circular plate shape, annular plate shape, or the like) in accordance with the shape or structure of the sputtering apparatus.

The method for producing the Al alloy sputtering target is not particularly limited. For example, it can be produced by a melt casting method, a powder sintering method, or a spray forming method.

The Al alloy film of the present invention is provided as long as the composition of the foregoing components is satisfied The work function is sufficient, and the film thickness of the Al alloy film is not particularly problematic. The film thickness of the Al alloy film can be, for example, 50 nm or more (preferably 100 nm or more) or 500 nm or less (preferably 300 nm or less).

The above has been described with respect to the special portion of the present invention, that is, the Al alloy film constituting the anode electrode. Hereinafter, the structure of the organic electroluminescence device including the Al alloy film (anode electrode) will be described.

Figure 1 discloses the construction of a general organic electroluminescent device. In Fig. 1, an anode electrode 2 is provided on a substrate 1, and an organic layer 3 and a cathode electrode 4 are laminated. Further, the laminated system is sealed with a sealing material 5. The substrate 1 is generally a glass substrate, but a metal or resin material can be used as long as it can support it. The organic layer 3 sometimes contains (layers) a hole transport layer or an electron transport layer in addition to the organic light-emitting layer. The organic layer 3 may be formed of a general-purpose material. As the cathode electrode 4, an Al-alkali metal alloy having a small work function or a laminated film of an alkali metal film and an Al-based film (for example, a laminated film of LiF and Al-based films) can be generally used. In FIG. 1, the laminated structure of the anode electrode 2 (substrate side electrode), the organic layer 3, and the cathode electrode 4 from the side of the substrate 1 is disclosed, but the invention is not limited thereto. The laminated structure of the cathode electrode (substrate side electrode), the organic layer, and the anode electrode may be sequentially formed from the substrate side depending on the structure of the element.

The present invention also includes a display device (organic electroluminescence display) including the above-described organic electroluminescence device and organic electroluminescence illumination. In the above display or illumination, the organic electroluminescence element used for the same is provided as long as it has an organic layer (organic light-emitting layer) having a substrate, an Al alloy film of the present invention as an anode electrode, and a direct connection thereto. Have The structure of the electromechanical excitation element may be a cathode electrode, and the other structure of the organic electroluminescence element or the structure other than the organic electroluminescence element is not limited.

Example

The present invention is further described in the following examples, but the present invention is of course not limited by the following examples, and may be appropriately modified and implemented within the scope of the gist of the present invention. Within the technical scope of the invention.

(film formation of Al alloy film)

First, an Al alloy film composed of the components shown in Table 1 was formed on a glass substrate (alkali-free glass #1737, diameter: 50 mm, thickness: 0.7 mm) manufactured by Corning Co., Ltd. (all of which were film thickness: 100 nm, and the remainder: Al). And inevitable impurities) film formation by sputtering using a DC magnetron sputtering device.

As the sputtering apparatus, a multi-layer sputtering apparatus (CS-200 manufactured by ULVAC Co., Ltd.) capable of simultaneously discharging a plurality of targets is used. The sputtering conditions (film formation conditions) are defined as: substrate temperature: room temperature, Ar gas flow rate: 20 sccm, Ar gas pressure: about 0.1 Pa, DC sputtering power density: 2 to 5 W/cm ² , ultimate vacuum: 2.0 × 10 ^-6 Torr or less.

Further, the sputtering target for film formation is an Al alloy sputtering target which is produced by a vacuum melting method and has the same composition as the film composition shown in Table 1 below, or is used in a pure Al sputtering target. On the sputtered surface of the material, a metal formed of a metal element constituting the Al alloy film shown in Table 1 below is adhered. A composite target made of tablets.

The Al alloy film was formed into a film as described above, and then heat-treated at 250 ° C for 1 hour in a nitrogen atmosphere or an atmosphere to obtain a sample. Further, the above-described heat treatment was not applied to the Al alloy films of Nos. 2 to 8 of Table 1 described later.

For each of the above samples, the measurement of the work function and the measurement of the specific resistance were carried out as follows. In addition, the composition of the obtained Al alloy film was confirmed by quantitative analysis by an ICP emission spectroscopic analyzer (ICP-8000 type ICP emission spectrometer manufactured by Shimadzu Corporation).

(Measurement of work function)

The work function of the surface of the Al alloy film (the surface exposed to the outside atmosphere) was measured by a work function measuring device (Model: AC-2) manufactured by Riken Keiki Co., Ltd. Further, the work function is sensitive to the surface state (organic matter contamination in the atmosphere, etc.), so UV irradiation is performed immediately before the measurement of the above AC-2 to wash the surface of the Al alloy film. The UV irradiation described above was carried out by using a UV irradiation device (Model: DUV-800-6) manufactured by GS YUASA Co., Ltd., and irradiated with UV at a lamp voltage of 300 V for 1 minute. Further, the case where the work function is 4.5 eV or more is set as the pass.

(Measurement of resistivity)

The resistivity was measured using the above sample. In detail, a commercially available measuring instrument (made by Hioki Electric Co., Ltd.) is used by the four-point probe method generally used. 3540 MΩ HiTESTER) to determine. Next, the specific resistance of the laminate was calculated according to the following formula (1). Further, in the above measurement, a sample having a sample area larger than the probe interval is used, and the proportional constant F is set to the following value. Next, the resistivity is 21.0 μΩ. The case below cm is evaluated as good and the resistivity is 20.0 μΩ. The situation below cm is evaluated as very good.

Resistivity = four-point probe method measurement value × film thickness × F. . . (1)

[In the above formula (1), F (proportional constant) = π / In2 = 4.532]

The results are shown in Table 1. Further, as a reference, in Table 1, a anodic electrode (ITO/Ag laminated film) which is laminated in the order of a substrate-ITO film (film thickness: 10 nm)-pure Ag film (film thickness: 100 nm) is also disclosed. The work function and resistivity (measurement conditions are as described above).

In Table 1, the work function is 4.5 eV or more, and the resistivity is 21.0 μΩ. The case of cm or less is evaluated as being applied to the anode electrode (○), and the case where at least one of the above work function and the above-described specific resistance does not satisfy the above range is evaluated as being unsuitable for the anode electrode (x).

According to Table 1, the following interpretation can be made.

No. 1 discloses a work function and a specific resistance when an ITO/Ag laminated film which is generally used is used as an anode electrode. As is clear from No. 1, the work function of the ITO/Ag laminated film was 5 eV or more, and the specific resistance was also relatively low.

On the other hand, Nos. 2 to 6 are examples of the Al-Nd alloy film, and since the X group element is not contained, the work function is small.

No. 7 to 9 are examples of the Al-Si film, and since the rare earth element or the like is not contained, the work function is small. In particular, No. 8 is an example in which a large amount of Si is contained and heat treatment is not performed, and the electrical resistivity is also high.

No. 10 to 14 are examples of an Al-Si-Nd film in which Si is added as an X group element to an Al-Nd material, and the amount of Si is changed. From these As an example, in order to achieve a lower resistivity, it is preferable to set the amount of Si to 20 atom% or less.

No. 15 to 19 are examples of an Al-Ge-Nd film in which Ge is added as an X group element to an Al-Nd material, and the amount of Ge is changed. As can be seen from these examples, in order to achieve a lower resistivity, it is preferable to set the amount of Ge to 25 atom% or less.

No. 20 to 23 is an example of an Al-Zn-Nd film in which Zn is added as an X group element to an Al-Nd material, and the amount of Zn is changed. As is apparent from these examples, in order to achieve a lower resistivity, it is preferred to set the amount of Zn to 20 atom% or less.

No. 24 to 26 are examples of an Al-Bi-Nd film in which Bi is added as an X group element to an Al-Nd material, and the amount of Bi is changed. As is apparent from these examples, when the amount of Bi is 2 atom% or more, the film peels off, and thus it is not suitable for the anode electrode.

No. 27 to 31 are examples of an Al-Si-Ge-Nd film in which Si and Ge are added as an X group element in an Al-Nd material, and the amount of Si and the amount of Ge are changed. From these results, it is understood that even when a plurality of X group elements are contained, excellent characteristics are exhibited as the anode electrode.

The present invention has been described in detail with reference to the specific embodiments thereof, and various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the invention.

The present application is based on a Japanese patent application filed on Sep. 13, 2012 (Japanese Patent Application No. 2012-201786), the disclosure of which is incorporated herein by reference.

Industrial utilization

According to the present invention, it is possible to provide an Al alloy film suitable for an anode electrode of an organic electroluminescence element by using a low-cost Al-based material. As a result, it is not necessary to use a conventionally used oxide conductive film (such as an ITO film) as the anode electrode, and it is not necessary to add an unnecessary organic layer as in the above-mentioned Patent Document 2, and a low-cost organic electroluminescent device can be realized. . Therefore, an organic electroluminescence display, an organic electroluminescence illumination, or the like excellent in light-emitting luminance characteristics can be manufactured at low cost.

Claims (7)

An Al alloy film for an anode electrode of an organic electroluminescence device, which is characterized in that it contains one or more elements selected from the group consisting of Si, Ge, Bi, In, Sn, and Zn, and contains 0.2 atom% or more. At least one of a rare earth element of 5.0 atom% or less and a high melting point metal, and a work function of 4.5 eV or more. The Al alloy film according to the first aspect of the invention, wherein at least one of the rare earth element and the high melting point metal is one or more elements selected from the group consisting of Nd, Ti and Ta. The Al alloy film according to claim 2, wherein at least one of the rare earth element and the high melting point metal is Nd. An organic electroluminescent device is an organic electroluminescent device comprising an organic layer and an anode electrode directly connected to the organic layer, wherein the anode electrode is according to items 1 to 3 of the patent application scope. Any of the Al alloy films described in any one of the above. An organic electroluminescence display comprising the organic electroluminescent device according to item 4 of the patent application. An organic electroluminescence illumination device characterized by comprising the organic electroluminescence device according to item 4 of the patent application. An Al alloy sputtering target for forming an Al alloy sputtering target according to any one of claims 1 to 3, characterized in that it contains Si, Ge, One or more elements selected from the group consisting of Bi, In, Sn, and Zn contain 0.2 atom% or more and 5.0 atom% or less At least one of a rare earth element and a high melting point metal.