TW201420270A - Damper for polishing pad conditioner - Google Patents

Damper for polishing pad conditioner Download PDF

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Publication number
TW201420270A
TW201420270A TW102137753A TW102137753A TW201420270A TW 201420270 A TW201420270 A TW 201420270A TW 102137753 A TW102137753 A TW 102137753A TW 102137753 A TW102137753 A TW 102137753A TW 201420270 A TW201420270 A TW 201420270A
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Taiwan
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arm
damper
polishing pad
base
head
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TW102137753A
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Chinese (zh)
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TWI597129B (en
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Jason Garcheung Fung
Paul D Butterfield
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/007Weight compensation; Temperature compensation; Vibration damping

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

A conditioner apparatus for use in substrate polishing includes a conditioner head constructed to receive an end effector for conditioning a surface of a polishing pad, an arm that supports the conditioner head, a base that supports the arm, and a damper system secured to the base. The base includes an actuator connected to the arm to move the arm and the conditioner head laterally over the polishing pad. The damper system is configured to reduce vibration of the arm.

Description

用於研磨墊調節器之阻尼器 Damper for polishing pad conditioner

本揭示案是關於研磨墊的調節。 This disclosure relates to the adjustment of the polishing pad.

通常藉由連續沉積導體層、半導體層或絕緣層於矽晶圓上,將積體電路形成於基板上。多種製造製程都需要基板上的層的平坦化。例如,針對某些應用(例如,將金屬層研磨來形成通孔、插頭與圖案層的溝槽中的線跡),將上層平坦化,直到曝露出圖案層的頂表面。在其他應用中(例如,將介電層平坦化,來用於微影),研磨上層,直到所要的厚度餘留在下層之上。 The integrated circuit is usually formed on the substrate by continuously depositing a conductor layer, a semiconductor layer or an insulating layer on the germanium wafer. The planarization of the layers on the substrate is required for a variety of manufacturing processes. For example, for certain applications (eg, grinding a metal layer to form vias, plugs, and traces in trenches of the pattern layer), the upper layer is planarized until the top surface of the patterned layer is exposed. In other applications (eg, planarizing the dielectric layer for lithography), the upper layer is ground until the desired thickness remains on the underlying layer.

化學機械研磨(CMP,Chemical mechanical polishing)是平坦化的一個已接受的方法。此平坦化方法通常需要基板被安裝在承載或研磨頭上。基板的曝露表面通常需要放置成相抵於旋轉的研磨墊。承載頭提供可控制的負載在基板上,以將基板推抵該研磨墊。有研磨作用的研磨漿通常供應至研磨墊的表面。 Chemical mechanical polishing (CMP) is an accepted method of planarization. This planarization method typically requires the substrate to be mounted on a load bearing or grinding head. The exposed surface of the substrate typically needs to be placed in opposition to the rotating polishing pad. The carrier head provides a controllable load on the substrate to push the substrate against the polishing pad. The abrasive slurry is usually supplied to the surface of the polishing pad.

在執行CMP處理某段時間之後,研磨墊的表面變成像玻璃的,這是由於從研磨墊及/或基板移除的材料及/或副產 物漿的累積。玻璃化會減低研磨墊的粗糙性,提供較少的局部壓力,因此減低研磨速率。另外,玻璃化會導致研磨墊失去它本身能夠保持研磨漿某種能力,進一步減低了研磨速率。 After performing a CMP process for a certain period of time, the surface of the polishing pad becomes imaged by the glass due to material and/or by-products removed from the polishing pad and/or substrate. The accumulation of the slurry. Vitrification reduces the roughness of the polishing pad and provides less localized pressure, thus reducing the polishing rate. In addition, vitrification can cause the polishing pad to lose its ability to maintain the slurry itself, further reducing the polishing rate.

通常,藉由研磨墊調節器的調節處理,玻璃化的研磨墊的特性可以恢復。研磨墊調節器是用以移除研磨墊上的非所欲累積,且研磨墊調節器將研磨墊的表面再生至所欲的粗糙性。一般的研磨墊調節器包括有研磨作用的頭部,該頭部通常嵌入有鑽石研磨料,鑽石研磨料可摩擦玻璃化的研磨墊的墊表面,以將研磨墊重新紋理化。 Generally, the characteristics of the vitrified polishing pad can be restored by the adjustment process of the polishing pad conditioner. The pad conditioner is used to remove unwanted buildup on the pad and the pad conditioner regenerates the surface of the pad to the desired roughness. A typical polishing pad conditioner includes an abrasive head that is typically embedded with a diamond abrasive that rubs against the mat surface of the vitrified polishing pad to retexture the polishing pad.

在具有某些研磨配方的某些調節系統中,研磨墊調節器(特別是研磨墊調節器臂部)將呈現顯著的振動。振動對於臂部是有害的,會減低調節處理的效用。另外,此振動通常是可聽見的,且事實上會大聲到讓人無法接受。但是,藉由在調節器的基座上設置微調的阻尼器塊,可以顯著地減低或消除振動。 In some adjustment systems with certain abrasive formulations, the pad conditioner (especially the pad conditioner arm) will exhibit significant vibration. Vibration is detrimental to the arm and reduces the effectiveness of the conditioning process. In addition, this vibration is usually audible and in fact loud enough to be unacceptable. However, by providing a fine-tuned damper block on the base of the regulator, vibration can be significantly reduced or eliminated.

在一態樣中,用於使用在基板研磨中的一種調節器設備包括:一調節器頭部,該調節器頭部是建構來接收一端效器,該端效器用於調節一研磨墊的一表面;一臂部,該臂部支撐該調節器頭部;一基座,該基座支撐該臂部;以及一阻尼器系統,該阻尼器系統固定至該基座。該基座包括一致動器,該致動器連接至該臂部,以將該臂部與該調節器頭部橫向地移動於該研磨墊之上。該阻尼器系統是配置來減低該臂部的振動。 In one aspect, a regulator apparatus for use in substrate polishing includes: a regulator head configured to receive an end effector for adjusting a polishing pad a surface; an arm supporting the adjuster head; a base supporting the arm; and a damper system to which the damper system is secured. The base includes an actuator coupled to the arm to move the arm laterally with the adjuster head over the polishing pad. The damper system is configured to reduce vibration of the arm.

實施可包括一或多個下面的特徵。該致動器包括一旋轉致動器,該旋轉致動器是配置來將該臂部掃動於該研磨墊之上。該阻尼器系統可固定至該旋轉致動器,且該阻尼器系統可藉由該旋轉致動器而旋轉。該阻尼器系統可包括一阻尼器塊。該阻尼器塊可藉由至少一阻尼器而附接至該基座。該至少一阻尼器可為一層的阻尼材料。該阻尼器塊可藉由複數個阻尼器而附接至該基座。該等複數個阻尼器可包括減震器。該等複數個阻尼器可配置成界定一主軸,該主軸平行於該臂部的振動的一主要模式的一軸。該等複數個阻尼器可配置成界定一主軸,該主軸平行於該臂部的一縱向軸。該調節器頭部可包括一垂直致動器,該垂直致動器連接至該端效器,以控制該端效器的一垂直位置。在另一態樣中,一種非暫態的電腦程式產品(有形地實施於一機器可讀取儲存裝置中)包括指令,來實行該方法。 Implementations may include one or more of the following features. The actuator includes a rotary actuator configured to sweep the arm over the polishing pad. The damper system can be fixed to the rotary actuator and the damper system can be rotated by the rotary actuator. The damper system can include a damper block. The damper block can be attached to the base by at least one damper. The at least one damper can be a layer of damping material. The damper block can be attached to the base by a plurality of dampers. The plurality of dampers can include a shock absorber. The plurality of dampers can be configured to define a major axis that is parallel to an axis of a primary mode of vibration of the arm. The plurality of dampers can be configured to define a major axis that is parallel to a longitudinal axis of the arm. The adjuster head can include a vertical actuator coupled to the end effector to control a vertical position of the end effector. In another aspect, a non-transitory computer program product (tangibly embodied in a machine readable storage device) includes instructions to implement the method.

實施可選擇性地包括一或多個下面的優點。可以減低研磨墊調節器的振動,特別是研磨墊調節器臂部。可以改良調節處理的效用。可以減少研磨墊調節器所產生的噪音。 Implementations may optionally include one or more of the following advantages. The vibration of the pad conditioner can be reduced, in particular the pad adjuster arm. The utility of the conditioning process can be improved. The noise generated by the pad conditioner can be reduced.

一或多個實施的細節是提出於所附圖式與下面的敘述中。其他態樣、特徵與優點將從敘述與圖式且從申請專利範圍而變得明顯。 The details of one or more implementations are set forth in the drawings and the description below. Other aspects, features, and advantages will be apparent from the description and drawings.

10‧‧‧基板 10‧‧‧Substrate

100‧‧‧研磨設備 100‧‧‧ grinding equipment

102‧‧‧框架 102‧‧‧Frame

110‧‧‧研磨墊 110‧‧‧ polishing pad

112‧‧‧外部研磨層 112‧‧‧External abrasive layer

114‧‧‧背托層 114‧‧‧Backing layer

116‧‧‧研磨表面 116‧‧‧Abrased surface

120‧‧‧壓盤 120‧‧‧ Platen

122‧‧‧馬達 122‧‧‧Motor

124‧‧‧驅動軸 124‧‧‧Drive shaft

125‧‧‧軸 125‧‧‧Axis

130‧‧‧埠 130‧‧‧埠

132‧‧‧研磨液(研磨漿) 132‧‧‧Slurry (grinding slurry)

140‧‧‧承載頭 140‧‧‧ Carrying head

142‧‧‧定位環 142‧‧‧ positioning ring

144‧‧‧彈性膜 144‧‧‧elastic film

150‧‧‧支撐結構(迴轉料架) 150‧‧‧Support structure (revolving rack)

152‧‧‧驅動軸 152‧‧‧ drive shaft

154‧‧‧承載頭旋轉馬達 154‧‧‧Loading head rotating motor

155‧‧‧軸 155‧‧‧Axis

160‧‧‧研磨墊調節器(調節設備) 160‧‧‧ polishing pad adjuster (adjustment equipment)

162‧‧‧基座 162‧‧‧Base

164‧‧‧臂部 164‧‧‧arms

166‧‧‧調節器頭部 166‧‧‧Regulator head

168‧‧‧沖洗杯 168‧‧‧ rinse cup

170‧‧‧端效器 170‧‧‧End effector

172‧‧‧調節圓盤 172‧‧‧Adjustment disc

174‧‧‧腔室 174‧‧‧室

174‧‧‧驅動軸 174‧‧‧Drive shaft

180‧‧‧旋轉致動器 180‧‧‧Rotary actuator

182‧‧‧支座 182‧‧‧Support

184‧‧‧蓋體 184‧‧‧ cover

190‧‧‧控制器 190‧‧‧ Controller

190‧‧‧阻尼器系統 190‧‧‧damper system

192‧‧‧阻尼器塊 192‧‧‧damper block

194‧‧‧阻尼器 194‧‧‧ damper

A‧‧‧主軸 A‧‧‧ spindle

第1圖例示了研磨設備的範例的示意橫剖面側視圖。 Figure 1 illustrates a schematic cross-sectional side view of an example of a grinding apparatus.

第2圖是研磨設備的研磨站的頂視圖。 Figure 2 is a top view of the grinding station of the grinding apparatus.

第3圖是調節器設備的橫剖面視圖。 Figure 3 is a cross-sectional view of the regulator device.

第4圖是調節設備的基座的頂視圖。 Figure 4 is a top view of the base of the adjustment device.

各個圖式中相似的元件符號與命名是表示相似的元件。 Similar component symbols and designations in the various figures represent similar elements.

第1圖例示了研磨設備100的範例。研磨設備100包括可旋轉的圓盤狀壓盤120,壓盤120上面有研磨墊110。壓盤120可操作來繞著軸125旋轉。例如,馬達122可轉動驅動軸124,以旋轉壓盤120。壓盤120可旋轉在大約30-200rpm。 FIG. 1 illustrates an example of a grinding apparatus 100. The grinding apparatus 100 includes a rotatable disk-shaped platen 120 having a polishing pad 110 thereon. The platen 120 is operable to rotate about the shaft 125. For example, motor 122 can rotate drive shaft 124 to rotate platen 120. The platen 120 can be rotated at approximately 30-200 rpm.

研磨墊110可具有研磨表面116。研磨墊110可為兩層的研磨墊,其中是外部研磨層112與較軟的背托層114。提供研磨表面116的該層(例如,外部研磨層112)可為多孔的聚氨基甲酸酯(polyurethane),例如,IC-1000材料。 The polishing pad 110 can have an abrasive surface 116. The polishing pad 110 can be a two layer polishing pad with an outer abrasive layer 112 and a softer backing layer 114. The layer that provides the abrasive surface 116 (eg, the outer abrasive layer 112) can be a porous polyurethane, such as an IC-1000 material.

研磨設備100可包括埠130,用以分配研磨液132(例如,研磨漿)至研磨墊110上。研磨漿132可包括有研磨作用的矽石粒子,例如,研磨漿可為SS-12。 The grinding apparatus 100 can include a crucible 130 for dispensing a slurry 132 (eg, a slurry) onto the polishing pad 110. The slurry 132 may include abrasive particles of vermiculite, for example, the slurry may be SS-12.

研磨設備100包括至少一個承載頭140。雖然只圖示一個承載頭140,可提供更多的承載頭,以固持額外的基板,使得研磨墊110的表面積可以有效率地使用。 The grinding apparatus 100 includes at least one carrier head 140. Although only one carrier head 140 is illustrated, more carrier heads can be provided to hold additional substrates so that the surface area of the polishing pad 110 can be used efficiently.

承載頭140可操作來固持基板10相抵於研磨墊110。承載頭140可具有相關於每一個別基板的研磨參數(例如,壓力)的獨立控制。承載頭140可包括定位環142,以將基板10定位在彈性膜144之下。膜144之後的一或多個腔室 的壓力輸送則控制了供應給基板10的壓力。雖然為了易於說明,在第1圖中只例示了三個腔室,可以有一或二個腔室,或者四或更多個腔室,例如五個腔室。 The carrier head 140 is operable to hold the substrate 10 against the polishing pad 110. The carrier head 140 can have independent control of the grinding parameters (eg, pressure) associated with each individual substrate. The carrier head 140 can include a positioning ring 142 to position the substrate 10 below the elastic film 144. One or more chambers after film 144 The pressure delivery controls the pressure supplied to the substrate 10. Although only three chambers are illustrated in Fig. 1 for ease of illustration, there may be one or two chambers, or four or more chambers, for example five chambers.

承載頭140懸吊自支撐結構150,支撐結構150例如是迴轉料架或軌道,且承載頭140藉由驅動軸152而連接至承載頭旋轉馬達154,使得承載頭可以繞著軸155旋轉。承載頭140可旋轉在大約30-200rpm。選擇性的,承載頭140可橫向振盪,例如在迴轉料架150或軌道上的滑件上,或者藉由迴轉料架本身的旋轉振盪。在操作中,壓盤是繞著其中心軸125旋轉,且承載頭是繞著其中心軸155旋轉並且橫越研磨墊的頂表面而橫向轉移。 The carrier head 140 suspends the self-supporting structure 150, such as a rotating rack or track, and the carrier head 140 is coupled to the carrier head rotation motor 154 by a drive shaft 152 such that the carrier head can rotate about the shaft 155. The carrier head 140 can be rotated at approximately 30-200 rpm. Alternatively, the carrier head 140 can oscillate laterally, such as on a rotating material on a rotating rack 150 or track, or by rotational rotation of the rotating rack itself. In operation, the platen is rotated about its central axis 125 and the carrier head is rotated about its central axis 155 and traversing across the top surface of the polishing pad.

研磨設備100也可包括研磨墊調節器160,以磨損研磨墊110,來將研磨墊110維持在一致的研磨狀態中。研磨墊調節器160包括基座162;臂部164,臂部164可以橫向掃動於研磨墊110之上;以及調節器頭部166,調節器頭部166藉由臂部164而連接至基座162。基座162安裝於研磨設備100的框架102上,框架102也可支撐其他元件,例如壓盤120與支撐結構150。調節器頭部166包括有研磨作用的表面,此表面是配置來調節研磨墊110的表面116。有研磨作用的表面是可旋轉的,且有研磨作用的表面相抵於研磨墊的壓力是可控制的。 The polishing apparatus 100 can also include a polishing pad conditioner 160 to abrade the polishing pad 110 to maintain the polishing pad 110 in a consistent abrasive state. The polishing pad adjuster 160 includes a base 162; an arm portion 164 that can be swept laterally over the polishing pad 110; and an adjuster head 166 that is coupled to the base by an arm portion 164 162. The base 162 is mounted to the frame 102 of the grinding apparatus 100, which can also support other components, such as the platen 120 and the support structure 150. The adjuster head 166 includes an abrasive surface that is configured to adjust the surface 116 of the polishing pad 110. The abrasive surface is rotatable and the abrasive surface is controllable against the pressure of the polishing pad.

參見第2圖,在一個操作模式中,研磨墊110是由調節器頭部166來調節,同時研磨墊110研磨基板10,基板10安裝於承載頭140上。在某些實施中,臂部164是樞接於 基座162,且臂部164來回掃動,以橫越研磨墊110用振盪掃動的動作(藉由箭頭S來圖示)來移動調節器頭部166。調節器頭部166的移動可同步於承載頭140的移動,以避免碰撞。 Referring to FIG. 2, in one mode of operation, the polishing pad 110 is adjusted by the regulator head 166 while the polishing pad 110 grinds the substrate 10, which is mounted on the carrier head 140. In some implementations, the arm 164 is pivotally connected to The base 162, and the arm portion 164 sweeps back and forth to move the adjuster head 166 across the polishing pad 110 with an oscillating sweep (illustrated by arrow S). The movement of the adjuster head 166 can be synchronized with the movement of the carrier head 140 to avoid collisions.

選擇性的,研磨設備100可包括沖洗杯168,沖洗杯168支撐於框架102上,且沖洗杯168是定位在一個位置中,該位置使得臂部164可以將調節器頭部166定位在沖洗杯168中。沖洗杯168可含有用於沖洗調節器頭部166的液體,或者一組噴嘴可安裝在沖洗杯中,以噴灑清洗液體於調節器頭部166上。在調節操作之前與之後,調節器頭部166可定位在沖洗杯168中,以受到清洗。 Alternatively, the grinding apparatus 100 can include a rinse cup 168 supported on the frame 102 and the rinse cup 168 positioned in a position that allows the arm 164 to position the adjuster head 166 in the rinse cup 168. The rinse cup 168 can contain liquid for flushing the regulator head 166, or a set of nozzles can be mounted in the rinse cup to spray the wash liquid onto the regulator head 166. The adjuster head 166 can be positioned in the rinse cup 168 to be cleaned before and after the conditioning operation.

參見第3圖,調節器頭部166包括可旋轉的且可垂直移動的端效器170,端效器170固持著調節圓盤172。調節圓盤172具有底表面是嵌入有鑽石研磨料,鑽石研磨料可摩擦研磨墊的表面,以將研磨墊重新紋理化。調節圓盤172可藉由磁鐵或藉由機械緊固件而固持在端效器中。平衡環機構可耦接於端效器170與調節器頭部166之間,平衡環機構允許端效器170相對於臂部164傾斜一角度。 Referring to FIG. 3, the adjuster head 166 includes a rotatable and vertically movable end effector 170 that holds the adjustment disc 172. The adjustment disk 172 has a bottom surface that is embedded with a diamond abrasive that rubs the surface of the polishing pad to retexture the polishing pad. The adjustment disk 172 can be held in the end effector by a magnet or by mechanical fasteners. The gimbal mechanism can be coupled between the end effector 170 and the regulator head 166, which allows the end effector 170 to be inclined at an angle relative to the arm portion 164.

端效器170的垂直移動與調節圓盤172的壓力控制可由調節器頭部166中的垂直致動器來提供,例如,可加壓的腔室174是設置來供應向下的壓力給端效器170。或者,垂直移動與壓力控制可由基座162中的垂直致動器來提供,該垂直致動器將整個臂部164與調節器頭部166升舉,或者可由臂部164與基座162之間的樞軸連接來提供,該樞軸連接允許可以控制臂部164的傾斜角,且因此可以控制研磨墊110 之上的調節器頭部166的高度。 The vertical movement of the end effector 170 and the pressure control of the adjustment disk 172 can be provided by a vertical actuator in the regulator head 166, for example, the pressurizable chamber 174 is configured to supply downward pressure to the end effect. 170. Alternatively, vertical movement and pressure control may be provided by a vertical actuator in the base 162 that lifts the entire arm 164 and the adjuster head 166 or may be between the arm 164 and the base 162 Provided by a pivotal connection that allows control of the tilt angle of the arm portion 164, and thus can control the polishing pad 110 The height of the regulator head 166 above.

端效器170的旋轉可由基座162中的馬達來提供,該馬達是藉由傳送帶驅動器連接,傳送帶驅動器延伸通過臂部164,以接合於連接至端效器170的驅動軸174。調節器頭部的敘述可在美國專利第6,036,583號中找到,在此藉由參照而併入。 Rotation of the end effector 170 can be provided by a motor in the base 162 that is coupled by a belt drive that extends through the arm 164 to engage the drive shaft 174 that is coupled to the end effector 170. A description of the head of the regulator can be found in U.S. Patent No. 6,036,583, which is incorporated herein by reference.

控制器190(見第1圖,例如,電腦)可連接至調節設備160,以控制臂部164的橫向掃動、端效器170的旋轉速率與端效器170在研磨墊上的向下力量。 Controller 190 (see FIG. 1, for example, a computer) can be coupled to adjustment device 160 to control the lateral sweep of arm 164, the rate of rotation of end effector 170, and the downward force of end effector 170 on the polishing pad.

基座162包括旋轉致動器180,旋轉致動器180固持在支座182上,支座182固定至框架。臂部164固定至旋轉致動器180,致動器180的旋轉會導致臂部164橫越研磨墊的橫向掃動。 The base 162 includes a rotary actuator 180 that is retained on a mount 182 that is secured to the frame. The arm portion 164 is fixed to the rotary actuator 180, and rotation of the actuator 180 causes the arm portion 164 to traverse the lateral sweep of the polishing pad.

阻尼器系統190附接於調節器設備160的基座162。例如,阻尼器系統190可附接於旋轉致動器180。在此實例中,阻尼器系統190可藉由致動器180而旋轉。 Damper system 190 is attached to base 162 of regulator device 160. For example, damper system 190 can be attached to rotary actuator 180. In this example, damper system 190 can be rotated by actuator 180.

阻尼器系統190包括阻尼器塊192。阻尼器塊192是重的本體,例如,是由金屬所形成。阻尼器塊192的質量經過選擇,以增加臂部的穩定度臨界值。蓋體184可延伸於阻尼器塊192之上,以保護阻尼器塊192遠離研磨漿與其他汙染物,例如,以防止腐蝕。 The damper system 190 includes a damper block 192. The damper block 192 is a heavy body, for example, formed of metal. The mass of the damper block 192 is selected to increase the stability threshold of the arm. The cover 184 can extend over the damper block 192 to protect the damper block 192 from the slurry and other contaminants, for example, to prevent corrosion.

阻尼器塊192可藉由剛性連接而固定至基座162,例如藉由機械緊固件,或者一或多個阻尼器194可設置在阻尼器塊192與基座162之間。 The damper block 192 can be secured to the base 162 by a rigid connection, such as by mechanical fasteners, or one or more dampers 194 can be disposed between the damper block 192 and the base 162.

每一阻尼器194可為減震器,例如水壓的或機械的阻尼器,或者每一阻尼器194可以只是一層黏彈的材料。 Each damper 194 can be a shock absorber, such as a hydraulic or mechanical damper, or each damper 194 can be just a layer of viscoelastic material.

通常,振動的主要模式是平行於臂部164的縱向軸。因此,阻尼器194可定位來優先地減低此模式中的振動。如同第4圖所示,阻尼器194可定位成使得阻尼器194所界定的形狀(以虛線圖示)的主軸A是平行於臂部164的縱向軸並且與臂部164的縱向軸在相同的垂直平面中。 Typically, the primary mode of vibration is parallel to the longitudinal axis of the arm 164. Thus, the damper 194 can be positioned to preferentially reduce vibration in this mode. As shown in FIG. 4, the damper 194 can be positioned such that the major axis A of the shape (shown in phantom) defined by the damper 194 is parallel to the longitudinal axis of the arm 164 and is the same as the longitudinal axis of the arm 164. In the vertical plane.

通常,如果阻尼器塊192是沒有利用或利用最小的阻尼來固定,臂部164的自然頻率會改變,使得調節器臂部164的振動顯著地減低。例如,調節器設備160可以在不同的可消耗的設置與向下力範圍之上運行有可接受的振動程度。通常,如果阻尼器塊192是藉由足夠的阻尼器192而連接至基座162,有問題的振動可以顯著地減低或有效地消除。因此,使用阻尼器系統190可以大大地增加臂部可以使用的應用範圍,而不會導致任何有問題的振動。 In general, if the damper block 192 is not utilized or fixed with minimal damping, the natural frequency of the arm portion 164 may change such that the vibration of the adjuster arm portion 164 is significantly reduced. For example, the regulator device 160 can operate with an acceptable level of vibration above a different consumable setting and a downward force range. Generally, if the damper block 192 is coupled to the base 162 by a sufficient damper 192, the problematic vibration can be significantly reduced or effectively eliminated. Thus, the use of the damper system 190 can greatly increase the range of applications in which the arms can be used without causing any problematic vibrations.

雖然上面的敘述是集中在調節器頭部上,阻尼器系統可以應用至研磨系統中易受振動影響的其他懸臂部件。例如,阻尼器系統可以應用至將研磨頭固持的臂部。 Although the above description is focused on the regulator head, the damper system can be applied to other cantilever components in the grinding system that are susceptible to vibration. For example, the damper system can be applied to an arm that holds the grinding head.

上述的研磨設備與方法可以應用在多種研磨系統中。研磨墊或承載頭之一者或兩者都可移動,來提供研磨表面與基板之間的相對移動。例如,壓盤可盤旋而非旋轉。研磨墊可為圓形以外的形狀。終點偵測系統的某些態樣可以應用至線性研磨系統,例如,其中研磨墊是線性移動之連續或卷軸至卷軸的帶。研磨層可為標準(例如,具有或不具有填 充料的聚氨基甲酸酯)的研磨材料、軟材料或有固定研磨性的材料。臂部可進行線性延伸移動,而非角度的掃動。 The above described grinding apparatus and method can be applied to a variety of grinding systems. One or both of the polishing pad or carrier head can be moved to provide relative movement between the abrasive surface and the substrate. For example, the platen can be hovered rather than rotated. The polishing pad can have a shape other than a circle. Certain aspects of the endpoint detection system can be applied to linear abrasive systems, for example, where the polishing pad is a linearly moving continuous or reel-to-reel strap. The abrasive layer can be standard (eg with or without filling) Abrasive material, soft material or material with fixed abrasiveness of the filled polyurethane. The arm can move linearly, rather than sweeping at an angle.

當在此說明書中使用時,用語「基板」可包括例如產品基板(例如,包括多個記憶體與處理器晶粒的產品基板)、測試基板、裸板與閘化基板。基板可在積體電路製造的各種階段,例如,基板可為裸晶圓,或者基板可包括一或多個已沉積及/或圖案化的層。用語「基板」可包括圓盤與矩形板。 As used in this specification, the term "substrate" may include, for example, a product substrate (eg, a product substrate including a plurality of memory and processor dies), a test substrate, a bare board, and a snuated substrate. The substrate can be at various stages of integrated circuit fabrication, for example, the substrate can be a bare wafer, or the substrate can include one or more deposited and/or patterned layers. The term "substrate" can include a disk and a rectangular plate.

此說明書中所述的所有功能操作與本發明的實施例可以用下述來實施:數位電子電路,或者電腦軟體、韌體,或硬體、包括此說明書中所揭示的結構手段與其結構均等物,或它們的組合。本發明的實施例可以實施為一或多個電腦程式產品(亦即,有形地實施於非暫態的機器可讀取儲存媒介中的一或多個電腦程式),以由資料處理設備來執行或控制操作,資料處理設備例如是可程式的處理器、電腦,或者多個處理器或電腦。 All of the functional operations described in this specification and embodiments of the present invention can be implemented by digital electronic circuitry, or computer software, firmware, or hardware, including the structural means and structural equivalents thereof disclosed in this specification. , or a combination of them. Embodiments of the invention may be implemented as one or more computer program products (ie, one or more computer programs tangibly embodied in a non-transitory machine readable storage medium) for execution by a data processing device Or control operations, such as a programmable processor, a computer, or multiple processors or computers.

已經敘述本發明的特定實施例。其他實施例都在下面的申請專利範圍的範圍內。 Specific embodiments of the invention have been described. Other embodiments are within the scope of the following patent claims.

所主張的申請專利範圍如下。 The claimed patent scope is as follows.

160‧‧‧研磨墊調節器(調節設備) 160‧‧‧ polishing pad adjuster (adjustment equipment)

162‧‧‧基座 162‧‧‧Base

164‧‧‧臂部 164‧‧‧arms

166‧‧‧調節器頭部 166‧‧‧Regulator head

170‧‧‧端效器 170‧‧‧End effector

172‧‧‧調節圓盤 172‧‧‧Adjustment disc

174‧‧‧腔室 174‧‧‧室

174‧‧‧驅動軸 174‧‧‧Drive shaft

180‧‧‧旋轉致動器 180‧‧‧Rotary actuator

182‧‧‧支座 182‧‧‧Support

184‧‧‧蓋體 184‧‧‧ cover

190‧‧‧控制器 190‧‧‧ Controller

190‧‧‧阻尼器系統 190‧‧‧damper system

192‧‧‧阻尼器塊 192‧‧‧damper block

194‧‧‧阻尼器 194‧‧‧ damper

Claims (11)

一種調節器設備,用於使用在基板研磨中,該調節器設備包括:一調節器頭部,該調節器頭部是建構來接收一端效器,該端效器用於調節一研磨墊的一表面;一臂部,該臂部支撐該調節器頭部;一基座,該基座支撐該臂部,該基座包括一致動器,該致動器連接至該臂部,以將該臂部與該調節器頭部橫向地移動於該研磨墊之上;及一阻尼器系統,該阻尼器系統固定至該基座,該阻尼器系統是配置來減低該臂部的振動。 A regulator apparatus for use in substrate polishing, the regulator apparatus comprising: a regulator head configured to receive an end effector for adjusting a surface of a polishing pad An arm supporting the adjuster head; a base supporting the arm, the base including an actuator coupled to the arm to arm the arm Moving laterally with the regulator head over the polishing pad; and a damper system secured to the base, the damper system being configured to reduce vibration of the arm. 如請求項1所述之設備,其中該致動器包括一旋轉致動器,該旋轉致動器是配置來將該臂部掃動於該研磨墊之上。 The device of claim 1 wherein the actuator comprises a rotary actuator configured to sweep the arm over the polishing pad. 如請求項2所述之設備,其中該阻尼器系統固定至該旋轉致動器,且該阻尼器系統藉由該旋轉致動器而旋轉。 The apparatus of claim 2, wherein the damper system is fixed to the rotary actuator, and the damper system is rotated by the rotary actuator. 如請求項1所述之設備,其中該阻尼器系統包括一阻尼器塊。 The apparatus of claim 1 wherein the damper system comprises a damper block. 如請求項4所述之設備,其中該阻尼器塊藉由至少一阻尼器而附接至該基座。 The device of claim 4, wherein the damper block is attached to the base by at least one damper. 如請求項5所述之設備,其中該至少一阻尼器包括一層的阻尼材料。 The apparatus of claim 5, wherein the at least one damper comprises a layer of damping material. 如請求項6所述之設備,其中該阻尼器塊藉由複數個阻尼器而附接至該基座。 The device of claim 6, wherein the damper block is attached to the base by a plurality of dampers. 如請求項7所述之設備,其中該等複數個阻尼器包括減震器。 The apparatus of claim 7, wherein the plurality of dampers comprise a shock absorber. 如請求項7所述之設備,其中該等複數個阻尼器是配置成界定一主軸,該主軸平行於該臂部的振動的一主要模式的一軸。 The apparatus of claim 7, wherein the plurality of dampers are configured to define a major axis that is parallel to an axis of a primary mode of vibration of the arm. 如請求項7所述之設備,其中該等複數個阻尼器是配置成界定一主軸,該主軸平行於該臂部的一縱向軸。 The apparatus of claim 7, wherein the plurality of dampers are configured to define a major axis that is parallel to a longitudinal axis of the arm. 如請求項1所述之設備,包括一垂直致動器,該垂直致動器是在該調節器頭部中並且連接至該端效器,以控制該端效器的一垂直位置。 The apparatus of claim 1 including a vertical actuator in the regulator head and coupled to the end effector to control a vertical position of the end effector.
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