TW201414368A - Transmission circuit structure body - Google Patents

Transmission circuit structure body Download PDF

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Publication number
TW201414368A
TW201414368A TW102131168A TW102131168A TW201414368A TW 201414368 A TW201414368 A TW 201414368A TW 102131168 A TW102131168 A TW 102131168A TW 102131168 A TW102131168 A TW 102131168A TW 201414368 A TW201414368 A TW 201414368A
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TW
Taiwan
Prior art keywords
conductive fine
insulating layer
circuit structure
fine particle
transmission circuit
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TW102131168A
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Chinese (zh)
Inventor
Kanji Otsuka
Yutaka Akiyama
Chihiro Ueda
Norifumi Sasaoka
Takafumi Ochi
Masato Ono
Original Assignee
Meisei Gakuen
Nippon Kodoshi Corp
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Publication of TW201414368A publication Critical patent/TW201414368A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30Arrangements for providing operation on different wavebands
    • H01Q5/307Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/335Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H05K1/0253Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07Electric details
    • H05K2201/0707Shielding
    • H05K2201/0723Shielding provided by an inner layer of PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09218Conductive traces
    • H05K2201/09236Parallel layout

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The invention provides a transmission circuit structure body, in which a resin such as a fluororesin or a liquid crystal polymer having a low dielectric constant and a low dielectric loss tangent is unnecessary. Even if in a region having a frequency over 5 GHz, a signal can be transmitted in which no high frequency components are lost. The transmission circuit structure body is composed of the following: a signal wire, formed by contacting with a main surface of an interlayer insulating layer, and a ground layer, including a conductive fine particle dispersion film, formed by contacting with another main surface of the interlayer insulating layer. The conductive fine particle dispersion film is formed by dispersing conductive fine particles in an organic material.

Description

傳送電路結構體 Transmission circuit structure

本發明是有關於一種包括信號線及接地圖案(ground pattern)的傳送電路結構體。 The present invention relates to a transmission circuit structure including a signal line and a ground pattern.

近年來,電腦(computer)或行動通信機器等搭載有積體電路(Integrated Circuit,IC)晶片(chip)的電子機器向高速化及高安裝密度化發展。進行防止因高安裝密度化而引起的信號的反射或失真(distortion)、於配線間產生的串擾(crosstalk)等的配線設計,而確保被稱為信號完整性(signal integrity)的信號品質變得越來越重要。 In recent years, an electronic device equipped with an integrated circuit (IC) chip such as a computer or a mobile communication device has been developed to have a higher speed and a higher mounting density. A wiring design that prevents reflection or distortion of signals due to high mounting density, crosstalk generated between wirings, and the like, and ensures signal quality called signal integrity becomes more and more important.

然而,所開發的高速介面(interface)的頻率成為超過5GHz的值,於使用該高頻率時,必須使信號的上升時間較先前更短,藉由上升時間變短,而使得信號的高頻分量顯著地顯現出來。因此,為降低高頻分量的損耗,必須選擇採用表面粗度小的銅箔、或介電常數及介電損耗正切低的樹脂之類的材料。 However, the frequency of the developed high-speed interface becomes a value exceeding 5 GHz. When the high frequency is used, the rise time of the signal must be made shorter than before, and the high-frequency component of the signal is made shorter by the rise time. Significantly revealed. Therefore, in order to reduce the loss of high-frequency components, it is necessary to select a material such as a copper foil having a small surface roughness or a resin having a low dielectric constant and a dielectric loss tangent.

於如上所述的傳送電路中,作為高頻特性佳的基板材料的代表,可列舉氟樹脂基板(例如參照專利文獻1、專利文獻2)或液晶聚合物基板(例如參照專利文獻3)等,但若與通用的玻璃 環氧樹脂(glass epoxy)相比,除為高價以外,亦有鍍敷密接性、與銅箔的接著強度低之類的於加工面的問題。另外,於氟樹脂基板或液晶聚合物基板等的材料中,於用於如先前所述的超過5GHz的高速信號傳送時,為降低因集膚效應(skin effect)所引起的損耗,亦必須採用表面粗度小的銅箔、或為降低介電損耗而使樹脂層變厚等的電路設計。 In the above-mentioned transmission circuit, a fluororesin substrate (see, for example, Patent Document 1, Patent Document 2) or a liquid crystal polymer substrate (see, for example, Patent Document 3), etc., may be mentioned as a representative of a substrate material having a high-frequency characteristic. But if it's with versatile glass In addition to the high price, the epoxy resin has a problem of a plating surface and a low adhesion strength to a copper foil. Further, in materials such as a fluororesin substrate or a liquid crystal polymer substrate, when used for high-speed signal transmission exceeding 5 GHz as described above, in order to reduce loss due to a skin effect, it is necessary to adopt A copper foil having a small surface roughness or a circuit design in which a resin layer is thickened to reduce dielectric loss.

[先前技術文獻] [Previous Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2005-7668號公報([0002]) [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-7668 ([0002])

[專利文獻2]日本專利特開2002-76652號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2002-76652

[專利文獻3]日本專利特開2006-128326號公報([0010]) [Patent Document 3] Japanese Patent Laid-Open Publication No. 2006-128326 ([0010])

作為高頻特性佳的基板材料的代表,可列舉氟樹脂基板或液晶聚合物基板等,但若與通用的玻璃環氧樹脂相比,則除了為高價以外,亦有鍍敷密接性、與銅箔的接著強度低之類的於加工面的問題。另外,於用於超過5GHz的高速信號傳送時,為降低因集膚效應所引起的損耗,而必須採用表面粗度小的銅箔、或為降低介電損耗而進行使樹脂層變厚等的電路設計。 A typical example of the substrate material having high-frequency characteristics is a fluororesin substrate or a liquid crystal polymer substrate. However, compared with a general-purpose glass epoxy resin, in addition to being expensive, plating adhesion and copper are also available. The problem of the finished surface of the foil is low on the machined surface. In addition, in order to reduce the loss due to the skin effect when used for high-speed signal transmission exceeding 5 GHz, it is necessary to use a copper foil having a small surface roughness or to thicken the resin layer in order to reduce dielectric loss. Circuit design.

為解決上述問題,本發明的目的在於提供一種傳送電路結構體,藉此實現電子機器的高速動作化,該傳送電路結構體不使用氟樹脂或液晶聚合物之類的低介電常數、低介電損耗正切的樹脂,即便於超過5GHz的頻率區域中亦可無高頻分量的損耗 地傳送信號。 In order to solve the above problems, an object of the present invention is to provide a transmission circuit structure, thereby realizing high-speed operation of an electronic device which does not use a low dielectric constant or a low dielectric such as a fluororesin or a liquid crystal polymer. Resin with electrical loss tangent, no loss of high frequency component even in the frequency region exceeding 5 GHz The signal is transmitted.

本發明的傳送電路結構體中,接觸於絕緣層的一主面而形成有信號線,且接觸於絕緣層的另一主面而形成有包含導電性微粒子分散膜的接地(ground)層,該導電性微粒子分散膜是使導電性微粒子分散於有機材料中而成。 In the transmission circuit structure of the present invention, a signal line is formed in contact with one main surface of the insulating layer, and a ground layer including a conductive fine particle dispersion film is formed in contact with the other main surface of the insulating layer. The conductive fine particle dispersion film is obtained by dispersing conductive fine particles in an organic material.

根據上述本發明的傳送電路結構體的構成,與信號線夾著絕緣層而形成的接地層包括導電性微粒子分散膜。該導電性微粒子分散膜的導通,藉由膜中所含的導電性微粒子彼此的接觸部分的歐姆(ohmic)接合而實現。另外,即便導電性微粒子彼此不接觸,亦可藉由穿隧效應(tunnel effect)或熱載子效應(hot carrier effect)而實現導通。進而,即便於導電性微粒子彼此分離的情形時,亦可藉由電場集中所產生的放電效應來輔助導通,或進而若使導電性微粒子分散的物質為半導體,則亦可藉由蕭特基(Schottky)效應等多種近場效應來輔助導通。 According to the configuration of the transmission circuit structure of the present invention described above, the ground layer formed by sandwiching the insulating layer with the signal line includes the conductive fine particle dispersion film. The conduction of the conductive fine particle-dispersed film is achieved by ohmic bonding of the contact portions of the conductive fine particles contained in the film. Further, even if the conductive fine particles are not in contact with each other, conduction can be achieved by a tunnel effect or a hot carrier effect. Further, even when the conductive fine particles are separated from each other, the conduction can be assisted by the discharge effect caused by the concentration of the electric field, or if the substance in which the conductive fine particles are dispersed is a semiconductor, the Schottky can also be used. A variety of near-field effects such as the Schottky effect are used to aid conduction.

另外,於各導電性微粒子間,存在對應於導電性微粒子的間隔的電壓差,於該電壓差變化時流動與該等之間的電容對應的位移電流。即,成為電容性耦合。該電容性耦合亦輔助電磁能量的傳遞。 Further, a voltage difference corresponding to the interval between the conductive fine particles exists between the respective conductive fine particles, and a displacement current corresponding to the capacitance between the conductive particles flows when the voltage difference changes. That is, it becomes capacitive coupling. This capacitive coupling also assists in the transmission of electromagnetic energy.

根據上述本發明的傳送電路結構體,藉由構成接地層的導電性微粒子分散膜的作用,不使用氟樹脂或液晶聚合物之類的低介電常數、低介電損耗正切的樹脂,即便於超過5GHz的頻率區域中亦可無高頻分量的損耗地傳送信號。因此,可防止產生信號的損耗或信號錯誤。其結果,藉由使用包括該傳送電路結構 體的電路基板,可達成電子機器的高積體化及小型化與高速化。 According to the transmission circuit structure of the present invention, by the action of the conductive fine particle dispersion film constituting the ground layer, a resin having a low dielectric constant or a low dielectric loss tangent such as a fluororesin or a liquid crystal polymer is not used, even if In the frequency region exceeding 5 GHz, signals can also be transmitted without loss of high frequency components. Therefore, loss of signal or signal error can be prevented. As a result, by using the transmission circuit structure The circuit board of the body can achieve high integration, miniaturization and high speed of electronic equipment.

11、11(S)‧‧‧信號線 11, 11 (S) ‧ ‧ signal line

12、12(G)‧‧‧接地圖案 12, 12 (G) ‧ ‧ grounding pattern

13、14、16‧‧‧絕緣層 13, 14, 16‧‧ insulation

15‧‧‧層間絕緣層 15‧‧‧Interlayer insulation

17‧‧‧接地層 17‧‧‧ Grounding layer

19‧‧‧傳送電路結構體的另一端 19‧‧‧Transport the other end of the circuit structure

51‧‧‧連接部 51‧‧‧Connecting Department

52(G)‧‧‧接地層 52(G)‧‧‧ Grounding layer

L‧‧‧傳送電路結構體的長度 L‧‧‧Transfer circuit structure length

W‧‧‧傳送電路結構體的寬度 W‧‧‧Transfer circuit structure width

Sref‧‧‧反射的信號 Sref‧‧·reflected signal

Sin‧‧‧輸入信號 Sin‧‧‧ input signal

圖1是本發明的第1實施方式的傳送電路結構體的概略構成圖(俯視圖)。 1 is a schematic configuration view (plan view) of a transmission circuit structure according to a first embodiment of the present invention.

圖2是沿圖1的A-A'的剖面圖。 Figure 2 is a cross-sectional view taken along line A-A' of Figure 1 .

圖3是比較例的傳送電路結構體的試樣的概略剖面圖。 3 is a schematic cross-sectional view showing a sample of a transmission circuit structure of a comparative example.

圖4是表示時域反射量測法(Time Domain Reflectmetry,TDR)測定的輸入信號與反射的信號的圖。 4 is a view showing an input signal and a reflected signal measured by Time Domain Reflectometry (TDR).

圖5是表示時域反射量測法測定的結果所獲得的返回至輸入側的信號的電壓的時間經過的圖。 Fig. 5 is a view showing the passage of time of the voltage of the signal returned to the input side obtained as a result of the measurement by the time domain reflectometry.

圖6是表示S參數(parameter)測定的結果所獲得的頻率與傳送損耗的關係的圖。 Fig. 6 is a graph showing the relationship between the frequency obtained as a result of the S parameter measurement and the transmission loss.

圖7是表示傳輸信號的上升時間的測定的結果所獲得的時間經過與電壓的關係的圖。 Fig. 7 is a view showing a relationship between time passage and voltage obtained as a result of measurement of a rise time of a transmission signal.

圖8是圖7的信號的上升附近的放大圖。 Fig. 8 is an enlarged view of the vicinity of the rise of the signal of Fig. 7.

圖9是表示實施例的傳送電路結構體的試樣的眼孔圖案(eye pattern)。 Fig. 9 is a view showing an eye pattern of a sample of the transmission circuit structure of the embodiment.

圖10是比較例的傳送電路結構體的試樣的眼孔圖案。 Fig. 10 is an eyelet pattern of a sample of a transfer circuit structure of a comparative example.

圖11是實施例的傳送電路結構體的試樣的剖面觀察照片。 Fig. 11 is a cross-sectional observation photograph of a sample of the transmission circuit structure of the embodiment.

圖12是將實施例的傳送電路結構體的試樣的剖面照片進行3維合成而成的圖像。 FIG. 12 is an image obtained by three-dimensionally combining cross-sectional photographs of samples of the transmission circuit structure of the embodiment.

以下基於圖式對本發明的實施方式進行說明。 Embodiments of the present invention will be described below based on the drawings.

<1.第1實施方式> <1. First Embodiment>

於圖1及圖2中表示本發明的第1實施方式的傳送電路結構體的概略構成圖。圖1是表示俯視圖,圖2是表示沿圖1的A-A'的剖面圖。 FIG. 1 and FIG. 2 are schematic diagrams showing a configuration of a transmission circuit structure according to a first embodiment of the present invention. 1 is a plan view, and FIG. 2 is a cross-sectional view taken along line AA' of FIG. 1.

圖1~圖2所示的傳送電路結構體中,接觸於層間絕緣層15的上表面而形成有信號線11(S)與接地圖案12(G),且接觸於層間絕緣層15的下表面而形成有包含導電性微粒子分散膜的接地層17,該導電性微粒子分散膜是使導電性微粒子含有、分散於樹脂中而成的。 In the transfer circuit structure shown in FIGS. 1 to 2, the signal line 11 (S) and the ground pattern 12 (G) are formed in contact with the upper surface of the interlayer insulating layer 15, and are in contact with the lower surface of the interlayer insulating layer 15. On the other hand, a ground layer 17 containing a conductive fine particle-dispersed film in which conductive fine particles are contained and dispersed in a resin is formed.

於信號線11及接地圖案12上形成有絕緣層14。於接地層17下形成有絕緣層16。 An insulating layer 14 is formed on the signal line 11 and the ground pattern 12. An insulating layer 16 is formed under the ground layer 17.

於本實施方式中,如圖2所示,絕緣層14、層間絕緣層15及絕緣層16藉由相同的絕緣材料而形成,且成為一體化的絕緣層13。 In the present embodiment, as shown in FIG. 2, the insulating layer 14, the interlayer insulating layer 15, and the insulating layer 16 are formed of the same insulating material, and become the integrated insulating layer 13.

以下,關於該等構成要素的詳細情況,以信號線11、接地圖案12、絕緣層13、包含導電性微粒子分散膜的接地層17的順序進行說明。 Hereinafter, the details of the constituent elements will be described in the order of the signal line 11, the ground pattern 12, the insulating layer 13, and the ground layer 17 including the conductive fine particle dispersed film.

信號線11是使將塊(bulk)狀的材料平面性地延展而成的薄膜圖案化(patterning)為線狀而構成。構成該信號線11的材料只要為導電性良好的材料則並無限定,例如使用銅(Cu)、鋁(Al)、金(Au)、銀(Ag)、及以該等為主成分的合金作為金屬箔。此處例如設置有包含銅箔的信號線11。 The signal line 11 is formed by patterning a film in which a bulk material is planarly stretched into a line shape. The material constituting the signal line 11 is not limited as long as it is a material having good conductivity. For example, copper (Cu), aluminum (Al), gold (Au), silver (Ag), and an alloy containing these as a main component are used. As a metal foil. Here, for example, a signal line 11 containing a copper foil is provided.

接地圖案12是夾著信號線11且自信號線11分開而形成有兩條。即,藉由信號線11及接地圖案12而形成與所謂的共面(coplanar)線路相同的構成。 The ground pattern 12 is formed by sandwiching the signal line 11 and being separated from the signal line 11. That is, the same configuration as the so-called coplanar line is formed by the signal line 11 and the ground pattern 12.

對兩條接地圖案12施加相同的電位、例如接地電位。 The same potential, for example, a ground potential, is applied to the two ground patterns 12.

接地圖案12是與信號線11同樣地,使將塊狀的材料平面性地延展而成的薄膜圖案化為線狀而構成。構成該接地圖案12的材料只要為導電性良好的材料則並無限定,例如使用銅(Cu)、鋁(Al)、金(Au)、銀(Ag)、及以該等為主成分的合金作為金屬箔。此處,例如設置有包含銅箔的接地圖案12。 Similarly to the signal line 11, the ground pattern 12 is formed by patterning a film in which a block-shaped material is planarly stretched into a line shape. The material constituting the ground pattern 12 is not limited as long as it is a material having good conductivity, and for example, copper (Cu), aluminum (Al), gold (Au), silver (Ag), and an alloy containing the same as a main component are used. As a metal foil. Here, for example, a ground pattern 12 including a copper foil is provided.

接地層17可如圖示般構成為導電性微粒子分散膜的單層構造,亦可構成為導電性微粒子分散膜與例如銅箔般的導電性材料的積層構造。於將接地層設為積層構造的情形時,將導電性微粒子分散膜配置於信號線及絕緣層側。 The ground layer 17 may have a single layer structure as a conductive fine particle dispersion film as shown in the drawing, or may be configured as a laminated structure of a conductive fine particle dispersed film and a conductive material such as a copper foil. When the ground layer is a laminated structure, the conductive fine particle dispersed film is disposed on the signal line and the insulating layer side.

此處,設為用於導電性微粒子分散膜的導電性微粒子使用導電性良好的材料而構成。該導電性微粒子使用金(Au)、銀(Ag)、銅(Cu)、鋁(Al)、鎳(Ni)、或石墨(graphite)而構成。該等材料能夠以單體來使用,或作為以將該等材料為主成分的合金來使用。進而,亦可將包含該等材料的多種粒子、或進而包含其他導電性材料的粒子混合而構成導電性微粒子。 Here, the conductive fine particles used for the conductive fine particle dispersion film are formed using a material having good conductivity. The conductive fine particles are made of gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), or graphite. These materials can be used as a monomer or as an alloy containing the materials as a main component. Further, a plurality of types of particles containing the materials or particles further containing other conductive materials may be mixed to form conductive fine particles.

該等導電性微粒子以薄片狀(小片(flake)狀)、球狀、長粒狀等形狀使用,亦可組合多種形狀來使用。 These conductive fine particles are used in the form of flakes (flakes), spheres, and long grains, and may be used in combination of various shapes.

於使用石墨作為導電性微粒子的情形時,使用以a面、b面為底面的圓盤形狀的石墨粒子。該石墨粒子是使石墨烯(graphene)於a面方向、b面方向積層而成的粒子。此處,銅的 自由電子密度為1.3×1023/cm3,但電子移動率僅為5.1×101cm2/V.s。另一方面,石墨的a面、b面的自由電子密度僅為1013/cm3,但電子移動率較高為1×104cm2/V.s,並且平均自由行程長。因此,認為石墨的a面、b面的導電率較銅更好。此外,石墨的c軸方向具有大的電阻。因此,較理想為將石墨烯薄的結晶粒子用作導電性微粒子。 In the case where graphite is used as the conductive fine particles, disk-shaped graphite particles having the a-plane and the b-plane as the bottom surface are used. This graphite particle is a particle obtained by laminating graphene in the a-plane direction and the b-plane direction. Here, the free electron density of copper is 1.3 × 10 23 /cm 3 , but the electron mobility is only 5.1 × 10 1 cm 2 /V. s. On the other hand, the free electron density of the a-plane and the b-plane of graphite is only 10 13 /cm 3 , but the electron mobility is higher at 1 × 10 4 cm 2 /V. s, and the average free length is long. Therefore, it is considered that the conductivity of the a-plane and the b-plane of graphite is better than that of copper. Further, the c-axis direction of graphite has a large electric resistance. Therefore, it is preferable to use crystalline particles thin in graphene as the conductive fine particles.

另外,導電性微粒子的形狀以例如長邊方向為50μm以下、短邊方向為10μm以下、其厚度為5μm以下的粒子形狀為主,且包含10μm以下的球形、橢圓球體、各向同性異形態的粒子形狀者。 In addition, the shape of the conductive fine particles is, for example, a particle shape having a longitudinal direction of 50 μm or less, a short-side direction of 10 μm or less, and a thickness of 5 μm or less, and a spherical shape, an ellipsoidal shape, and an isotropic form of 10 μm or less. Particle shape.

導電性微粒子分散膜是使如上所述的導電性微粒子分散於有機材料中之後硬化而成。 The conductive fine particle dispersion film is obtained by dispersing the conductive fine particles as described above in an organic material and then curing them.

使如上所述的導電性微粒子分散的有機材料使用可分散導電性微粒子的材料。作為該有機材料,例如可自環氧(epoxy)樹脂、聚醯亞胺(polyimide)樹脂、聚醯胺醯亞胺(polyamide-imide)樹脂、雙馬來醯亞胺三嗪(Bisma1eimide Triazine,BT)樹脂(resin)等通常所使用的有機絕緣性材料中適當選擇並使用。 The organic material in which the conductive fine particles are dispersed as described above is a material that can disperse the conductive fine particles. As the organic material, for example, an epoxy resin, a polyimide resin, a polyamide-imide resin, or a bimaleimine triazine (Bisma1eimide Triazine, BT) can be used. An organic insulating material which is generally used, such as a resin, is suitably selected and used.

此外,導電性微粒子分散膜的電阻率較佳為構成導電性微粒子的材料的塊狀材料的電阻率的5倍以上,更佳為1000倍左右。該導電性微粒子分散膜的電阻率藉由使膜厚變薄而提高。 Further, the electrical resistivity of the conductive fine particle-dispersed film is preferably 5 times or more, more preferably about 1,000 times, the electrical resistivity of the bulk material constituting the conductive fine particles. The electrical resistivity of the conductive fine particle dispersed film is improved by making the film thickness thin.

導電性微粒子分散膜使用在以溶劑稀釋的有機材料中分散有導電性微粒子的漿料而形成。例如一般而言使用市售的銀漿來形成。銀漿是例如使銀粒子分散於利用溶劑將作為有機材料的環氧樹脂的前驅物及硬化劑、進而視需要的其他添加劑稀釋而成的溶 液中而成。使用該銀漿形成薄膜,且使該薄膜中的有機材料硬化,藉此導電性粒子彼此相互接近至產生上述相互作用的距離為止或局部地接觸而保持導通狀態,從而獲得導電性微粒子分散膜。 The conductive fine particle dispersion film is formed by using a slurry in which conductive fine particles are dispersed in an organic material diluted with a solvent. For example, it is generally formed using a commercially available silver paste. The silver paste is, for example, a solution in which silver particles are dispersed in a solvent, a precursor of an epoxy resin as an organic material, a curing agent, and other additives as needed. Made in liquid. The silver paste is used to form a film, and the organic material in the film is cured, whereby the conductive particles are brought close to each other to a distance at which the interaction occurs, or are locally contacted to maintain an on state, thereby obtaining a conductive fine particle-dispersed film.

此外,於該導電性微粒子分散膜中,亦有於使有機材料(例如環氧樹脂或聚醯胺醯亞胺樹脂)硬化或乾燥的過程中將溶劑自膜中去除的情形。 Further, in the conductive fine particle dispersion film, there is a case where the solvent is removed from the film during the process of curing or drying the organic material (for example, an epoxy resin or a polyimide).

另外,於導電性微粒子分散膜中,亦可含有用以使導電性微粒子的分散性提高的分散劑或助溶劑等添加劑。 Further, the conductive fine particle-dispersed film may contain an additive such as a dispersing agent or a solubilizing agent for improving the dispersibility of the conductive fine particles.

另外,例如包含銅箔的信號線11及接地圖案12的厚度、以及包含導電性微粒子分散膜的接地層17的厚度,根據傳送電路結構體所處理的電流電容來決定。 Further, for example, the thickness of the signal line 11 and the ground pattern 12 including the copper foil, and the thickness of the ground layer 17 including the conductive fine particle dispersion film are determined according to the current capacitance processed by the transfer circuit structure.

若傳送電路結構體為用於電子電路者,則信號線11及接地圖案12的厚度較理想為數μm~十幾μm。 When the transmission circuit structure is used for an electronic circuit, the thickness of the signal line 11 and the ground pattern 12 is preferably several μm to several tens of μm.

另外,若傳送電路結構體為用於傳送電纜者,則信號線11及接地圖案12的厚度為自數μm至幾十mm。 Further, if the transmission circuit structure is a cable for transmission, the thickness of the signal line 11 and the ground pattern 12 is from several μm to several tens of mm.

絕緣層13較佳為使用可與構成導電性微粒子分散膜的有機材料在相同的溶劑中稀釋的有機材料而構成。此情形時,只要使構成絕緣層13及導電性微粒子分散膜的各有機材料乾燥之前或硬化之前的前驅物可利用相同的溶劑稀釋或溶解便可。 The insulating layer 13 is preferably made of an organic material which can be diluted in the same solvent as the organic material constituting the conductive fine particle dispersed film. In this case, the precursor before or after curing the respective organic materials constituting the insulating layer 13 and the conductive fine particle-dispersed film may be diluted or dissolved with the same solvent.

該絕緣層13例如使用與構成導電性微粒子分散膜的有機材料相同的材料。例如,若為設置有使銀粒子分散於環氧樹脂中而成的導電性微粒子分散膜的情形,則於絕緣層13使用環氧樹脂、聚醯亞胺樹脂、或聚醯胺醯亞胺樹脂等。該等樹脂或其前驅物可利用醇(alcohol)、酮(ketone)、酯(ester)等溶劑稀釋或溶解。 作為該等可稀釋或溶解上述樹脂或其前驅物的溶劑的其他具體例,有N-甲基吡咯啶酮(N-Methylpyrrolidone)、γ-丁內酯(γ-butyrolactone)、二乙二醇二甲醚(diglyme)、環戊酮(cyclopentanone)、苯甲酸乙酯等。 As the insulating layer 13, for example, the same material as the organic material constituting the conductive fine particle dispersed film is used. For example, in the case where a conductive fine particle dispersion film in which silver particles are dispersed in an epoxy resin is provided, an epoxy resin, a polyimide resin, or a polyimide resin is used for the insulating layer 13. Wait. The resin or its precursor may be diluted or dissolved with a solvent such as an alcohol, a ketone or an ester. As other specific examples of the solvent which can dilute or dissolve the above resin or its precursor, there are N-methylpyrrolidone, γ-butyrolactone, diethylene glycol II. Dimlyme, cyclopentanone, ethyl benzoate, and the like.

此外,於包含該有機材料的絕緣層13,亦有於有機材料的硬化或乾燥的過程中將溶劑去除的情形。 Further, in the insulating layer 13 containing the organic material, there is also a case where the solvent is removed during the hardening or drying of the organic material.

另外,絕緣層13是根據該傳送電路結構體所要求的性能,來調整為適當的分子構造或介電常數而使用。例如於使用包含聚醯胺醯亞胺樹脂的絕緣層13的情形時,藉由聚醯胺醯亞胺的分子構造的改良、或使高介電常數的粉末或低介電常數的粉末等分散於樹脂中來調整介電常數。 Further, the insulating layer 13 is used in accordance with the performance required for the transmission circuit structure, and is adjusted to an appropriate molecular structure or dielectric constant. For example, in the case of using the insulating layer 13 containing a polyamidoximine resin, the molecular structure of the polyamidoximine is improved, or a powder having a high dielectric constant or a powder having a low dielectric constant is dispersed. The dielectric constant is adjusted in the resin.

絕緣層13的膜厚以可於接地圖案12及接地層17獲得規定的特性阻抗(impedance)的方式設定。 The thickness of the insulating layer 13 is set so that a predetermined characteristic impedance can be obtained in the ground pattern 12 and the ground layer 17.

若該傳送電路結構體為用於電子電路者,則絕緣層13的膜厚設定為數μm~200μm。 When the transmission circuit structure is used for an electronic circuit, the thickness of the insulating layer 13 is set to several μm to 200 μm.

另外,若傳送電路結構體為用於傳送電纜者,則絕緣層13的膜厚設定為數μm~數mm。 Further, when the transmission circuit structure is a cable for transmission, the thickness of the insulating layer 13 is set to several μm to several mm.

此外,於本實施方式中,對絕緣層14、層間絕緣層15及絕緣層16藉由相同的絕緣材料形成的情形進行了說明,但亦可於該等絕緣層14、層間絕緣層15、絕緣層16使用不同的絕緣材料。 Further, in the present embodiment, the case where the insulating layer 14, the interlayer insulating layer 15, and the insulating layer 16 are formed of the same insulating material has been described, but the insulating layer 14, the interlayer insulating layer 15, and the insulating layer may be used. Layer 16 uses a different insulating material.

另外,亦可無夾著信號線11而形成的接地圖案12。此情形時,成為信號線與接地層夾著層間絕緣層的構成。 Alternatively, the ground pattern 12 formed by sandwiching the signal line 11 may be omitted. In this case, the interlayer insulating layer is interposed between the signal line and the ground layer.

上述構成的傳送電路結構體用作電路基板或傳送電 纜。此情形時,例如亦可連接於基板取出電極來使用或作為埋入於連接器(connector)中的構成來使用。進而,該傳送電路亦可利用無機絕緣膜或有機絕緣膜來覆蓋接地層。 The transmission circuit structure constructed as described above is used as a circuit substrate or a transmission power cable. In this case, for example, it may be connected to the substrate take-out electrode to be used or used as a structure embedded in a connector. Further, the transfer circuit may cover the ground layer with an inorganic insulating film or an organic insulating film.

(傳送電路的製造方法) (Manufacturing method of transmission circuit)

如上所述的傳送電路結構體例如能夠以如下說明的方式製造。 The transfer circuit structure as described above can be manufactured, for example, in the following manner.

首先,例如準備銅箔,於該銅箔上部成膜有機絕緣膜作為絕緣層。此時,將利用溶劑稀釋或溶解有機材料而成的溶液塗佈於銅箔上,其後進行乾燥處理,藉此獲得絕緣層。 First, for example, a copper foil is prepared, and an organic insulating film is formed as an insulating layer on the upper portion of the copper foil. At this time, a solution obtained by diluting or dissolving an organic material with a solvent is applied onto a copper foil, followed by drying treatment, thereby obtaining an insulating layer.

繼而,使銅箔圖案化而形成包含銅箔的信號線11與接地圖案12。 Then, the copper foil is patterned to form the signal line 11 including the copper foil and the ground pattern 12.

於絕緣層上成膜導電性微粒子分散膜。此時,使用在將有機材料稀釋而成的溶液中分散有導電性微粒子的漿料,並將該漿料塗佈於絕緣層上。於有機材料的稀釋中,較佳為使用與將構成絕緣層的有機材料稀釋或溶解者相同的溶劑。 A conductive fine particle dispersion film is formed on the insulating layer. At this time, a slurry in which conductive fine particles are dispersed in a solution obtained by diluting an organic material is used, and the slurry is applied onto an insulating layer. In the dilution of the organic material, it is preferred to use the same solvent as the organic material constituting the insulating layer is diluted or dissolved.

其後,對塗佈而成的膜進行乾燥處理,藉此,獲得導電性微粒子分散膜。 Thereafter, the coated film is dried to obtain a conductive fine particle-dispersed film.

繼而,進行使導電性微粒子分散膜的有機材料硬化或乾燥的步驟。於該步驟中,同時使絕緣層硬化。此處,重要的是不使導電性微粒子分散膜中的導電性微粒子變形地使有機材料硬化,保持膜中的導電性微粒子的分散狀態。因此,此處,以較導電性微粒子分散膜中的導電性微粒子的熔點低的溫度進行熱處理。藉此,使構成導電性微粒子分散膜的有機材料、及構成絕緣層的有機材料硬化或乾燥。另外,於構成導電性微粒子分散膜的 有機材料、及構成絕緣層的有機材料為光硬化性樹脂的情形時,亦可利用光照射進行硬化。如此獲得的導電性微粒子分散膜成為接地層。 Then, a step of curing or drying the organic material of the conductive fine particle-dispersed film is performed. In this step, the insulating layer is simultaneously hardened. Here, it is important that the organic fine material is hardened without deforming the conductive fine particles in the conductive fine particle-dispersed film, and the dispersed state of the conductive fine particles in the film is maintained. Therefore, here, heat treatment is performed at a temperature lower than the melting point of the conductive fine particles in the conductive fine particle dispersion film. Thereby, the organic material constituting the conductive fine particle dispersion film and the organic material constituting the insulating layer are cured or dried. In addition, in the conductive fine particle dispersion film When the organic material and the organic material constituting the insulating layer are photocurable resins, they may be cured by light irradiation. The conductive fine particle-dispersed film thus obtained serves as a ground layer.

此外,若為接地層構成為導電性微粒子分散膜與例如銅箔般的導電性材料的積層構造的情形,則於以如上方式製作的導電性微粒子分散膜的上部積層如銅箔般的導電性材料。藉此,獲得包含絕緣層側的導電性微粒子分散膜與其上部的導電性材料的積層構造的接地層。 In the case where the ground layer is formed of a laminated structure of a conductive fine particle-dispersed film and a conductive material such as a copper foil, conductivity is deposited on the upper portion of the conductive fine particle-dispersed film produced as described above, such as copper foil. material. Thereby, a ground layer having a laminated structure of the conductive fine particle-dispersed film on the insulating layer side and the conductive material on the upper portion thereof was obtained.

以如上方式完成傳送電路結構體。如此獲得的傳送電路結構體使用在有機材料中分散有導電性微粒子的導電性微粒子分散膜而構成接地層17。 The transfer circuit structure is completed in the above manner. The transmission circuit structure thus obtained constitutes the ground layer 17 by using a conductive fine particle dispersion film in which conductive fine particles are dispersed in an organic material.

[實施例] [Examples]

(實驗1) (Experiment 1)

作為實施例,利用圖1~圖2所示的構造製作應用有本發明構成的傳送電路結構體(S1)。 As an embodiment, a transmission circuit structure (S1) to which the present invention is applied is manufactured by using the structure shown in Figs. 1 to 2 .

另外,作為比較例,製作將圖2的剖面圖所示的構造變更為圖3的剖面圖所示的構造的應用有現有構成的傳送電路結構體(C1)。 In addition, as a comparative example, a transmission circuit structure (C1) to which the structure shown in the cross-sectional view of FIG. 2 is changed to the structure shown in the cross-sectional view of FIG. 3 is applied.

圖3所示的構造形成利用銅箔的接地層52及利用導體層的連接部51來代替圖2的導電性微粒子分散膜。 The structure shown in FIG. 3 forms a ground layer 52 using a copper foil and a connecting portion 51 using a conductor layer instead of the conductive fine particle dispersed film of FIG.

以上的實驗1的各試樣的傳送電路結構體中的接地層的構成是如下述表1所示。 The configuration of the ground layer in the transfer circuit structure of each sample of the above experiment 1 is as shown in Table 1 below.

繼而,說明各傳送電路結構體的製造步驟。 Next, the manufacturing steps of the respective transmission circuit structures will be described.

首先,準備於厚度100μm左右的鋁箔上形成有接著力較通常的樹脂系接著劑弱的可剝離的接著層的支撐體,且於該支撐體的接著層上形成有膜厚18μm的Cu箔。 First, a support having a peelable adhesive layer having a lower adhesive force than a usual resin-based adhesive is formed on an aluminum foil having a thickness of about 100 μm, and a Cu foil having a thickness of 18 μm is formed on the adhesive layer of the support.

其後,藉由蝕刻而使Cu箔圖案化。藉此,形成包含Cu箔的信號線11及接地圖案12。 Thereafter, the Cu foil is patterned by etching. Thereby, the signal line 11 including the Cu foil and the ground pattern 12 are formed.

此時,於各試樣中,將傳送電路結構體的長度L設為200mm,將傳送電路結構體的寬度W設為20mm。另外,將信號線11的寬度設為100μm,將信號線11與接地圖案12之間的間隔設為550μm。 At this time, in each sample, the length L of the transmission circuit structure was set to 200 mm, and the width W of the transmission circuit structure was set to 20 mm. Further, the width of the signal line 11 was set to 100 μm, and the interval between the signal line 11 and the ground pattern 12 was set to 550 μm.

繼而,於Cu箔的表面塗佈以N-甲基-2-吡咯啶酮為溶劑的溶劑可溶型的聚醯胺醯亞胺(PAI,polyamide-imide),藉由使該聚醯胺醯亞胺乾燥而形成包含PAI的層間絕緣層15。層間絕緣層15的膜厚設為15μm~20μm。 Then, a solvent-soluble polyamine-imide (PAI) coated with N-methyl-2-pyrrolidone as a solvent is coated on the surface of the Cu foil by using the polyamidamine The imine is dried to form an interlayer insulating layer 15 containing PAI. The film thickness of the interlayer insulating layer 15 is set to 15 μm to 20 μm.

繼而,於層間絕緣層15形成連接孔。於試樣C1中, 利用鍍敷或填孔用導電性漿料填埋連接孔而形成連接部51。 Then, a connection hole is formed in the interlayer insulating layer 15. In sample C1, The connection portion 51 is formed by filling a connection hole with a conductive paste for plating or filling.

其次,於試樣S1中,塗佈導電性微粒子分散漿料並使其乾燥,藉此於連接孔的內部及層間絕緣膜的表面形成包含導電性微粒子分散膜的接地層17。此時,如上述表1所示,於試樣S1中,作為導電性微粒子的形狀及材質,設為小片狀Ag(長徑6.2μm、含量85wt%(重量百分比))。包含導電性微粒子分散膜的接地層17的膜厚設為5~10μm。作為導電性微粒子分散漿料的溶劑,使用與構成層間絕緣層15的PAI相同的N-甲基-2-吡咯啶酮。 Next, in the sample S1, the conductive fine particle-dispersed slurry is applied and dried to form a ground layer 17 containing a conductive fine particle-dispersed film on the inside of the connection hole and the surface of the interlayer insulating film. At this time, as shown in the above Table 1, the shape and material of the conductive fine particles in the sample S1 were platelet-shaped Ag (long diameter: 6.2 μm, content: 85 wt% (% by weight)). The thickness of the ground layer 17 including the conductive fine particle dispersion film is set to 5 to 10 μm. As the solvent of the conductive fine particle-dispersed slurry, the same N-methyl-2-pyrrolidone as the PAI constituting the interlayer insulating layer 15 was used.

另一方面,於試樣C1中,於層間絕緣層15及連接部51上藉由熱壓接而貼合銅(Cu)箔(膜厚18μm)來形成接地層52。 On the other hand, in the sample C1, a copper (Cu) foil (film thickness: 18 μm) was bonded to the interlayer insulating layer 15 and the connection portion 51 by thermocompression bonding to form the ground layer 52.

其後,於接地層17、接地層52的上部,與各試樣的層間絕緣層15同樣地,塗佈以N-甲基-2-吡咯啶酮為溶劑的溶劑可溶型的聚醯胺醯亞胺(PAI),且使該聚醯胺醯亞胺乾燥而形成包含PAI的絕緣層16。絕緣層16的膜厚設為10μm左右。 Thereafter, a solvent-soluble polyamine having N-methyl-2-pyrrolidone as a solvent is applied to the upper portion of the ground layer 17 and the ground layer 52 in the same manner as the interlayer insulating layer 15 of each sample. The quinone imine (PAI), and the polyamidoximine is dried to form an insulating layer 16 comprising PAI. The thickness of the insulating layer 16 is set to about 10 μm.

其次,去除存在於信號線11及接地圖案12的背面的支撐體。 Next, the support body existing on the back surface of the signal line 11 and the ground pattern 12 is removed.

繼而,於信號線11及接地圖案12的背面,與各試樣的絕緣層14同樣地,塗佈以N-甲基-2-吡咯啶酮為溶劑的溶劑可溶型的聚醯胺醯亞胺(PAI),且使該聚醯胺醯亞胺乾燥而形成包含PAI的絕緣層14。絕緣層14的膜厚設為10μm左右。 Then, on the back surface of the signal line 11 and the ground pattern 12, a solvent-soluble polyamidofluorene containing N-methyl-2-pyrrolidone as a solvent is applied in the same manner as the insulating layer 14 of each sample. An amine (PAI), and the polyamidoximine is dried to form an insulating layer 14 comprising PAI. The thickness of the insulating layer 14 is set to about 10 μm.

經過以上的步驟而獲得各試樣的傳送電路結構體。 Through the above steps, the transfer circuit structure of each sample was obtained.

此外,乾燥結束後的層間絕緣層15的相對介電常數εr,利用空腔共振器擾動法以測定頻率1GHz進行測定的結果為2.9。 Further, the relative dielectric constant ε r of the interlayer insulating layer 15 after completion of the drying was measured by a cavity resonator perturbation method at a measurement frequency of 1 GHz, and was 2.9.

關於所製作的各試樣的傳送電路結構體,進行特性的 測定及評估。 Regarding the transfer circuit structure of each of the prepared samples, characteristics were performed. Determination and evaluation.

(1)時域反射量測法(Time Domain Reflectmetry)測定 (1) Time Domain Reflectometry

於實施例及比較例的傳送電路結構體的試樣中,將試樣的一端作為輸入側。而且,於該輸入側連接接地-信號(ground-signal)探針(probe)(CP690-01),進而將接地-信號探針連接於安捷倫(Agilent)製造的數位示波器(digital oscilloscope)86100C。 In the samples of the transfer circuit structures of the examples and the comparative examples, one end of the sample was used as the input side. Furthermore, a ground-signal probe (CP690-01) is connected to the input side, and the ground-signal probe is connected to an Agilent digital oscilloscope 86100C.

自數位示波器通過接地-信號探針,如圖4所示對傳送電路結構體的試樣的輸入側輸入階型電壓(step voltage)200mV作為輸入信號Sin。 From the digital oscilloscope, as a grounding-signal probe, as shown in FIG. 4, a step voltage of 200 mV is input to the input side of the sample of the transmission circuit structure as an input signal Sin.

信號於傳送電路結構體的另一端19、即線路的終端被反射而返回,故而藉由檢測該反射的信號Sref,可知傳送電路結構體的電路的特性阻抗Z0(線路所具有的固有的值)、及電磁能量於傳送線路中往返所需的時間2tpdThe signal is reflected and returned at the other end 19 of the transmission circuit structure, that is, the terminal of the line. Therefore, by detecting the reflected signal Sref, the characteristic impedance Z 0 of the circuit of the transmission circuit structure (the inherent value of the line) is known. ), and the time required for the electromagnetic energy to travel back and forth in the transmission line 2t pd .

電磁學方面,於傳送線路傳輸的電磁波的速度V藉由層間絕緣層15的樹脂的介電常數ε與下述的式(1)而導出。 In terms of electromagnetics, the velocity V of the electromagnetic wave transmitted on the transmission line is derived by the dielectric constant ε of the resin of the interlayer insulating layer 15 and the following formula (1).

作為測定結果,將返回至輸入側的信號的電壓的時間經過示於圖5中。 As a result of the measurement, the time of returning the voltage of the signal to the input side is shown in FIG.

如自圖5所得知般,實施例相對於比較例,傳輸時間縮短約21%。 As can be seen from Fig. 5, the transmission time was shortened by about 21% in the embodiment relative to the comparative example.

此外,重複製作實施例的傳送電路結構體的試樣並進行測定,可獲得相同的結果。 Further, the samples of the transfer circuit structure of the examples were repeatedly produced and measured, and the same results were obtained.

此外,於實施例的試樣的情形時,若自式(1)考慮,則成為金屬微粒子分散膜的相對介電常數∣εr∣<1,於假設考慮在金屬微粒子分散膜內傳輸的電磁波的情形時,成為較光速快的速度。然而,此歸根到底是利用藉由馬克士威(Maxwell)的電磁方程式而導出的式(1)所獲得的計算值,故而於金屬微粒子分散膜的情形時,亦假定不適合於馬克士威的電磁方程式。物理學上,不存在較光的速度快的現象,因此在合理地說明此現象的物理上,可解釋為與層間絕緣物的極化有關的相對介電常數實效上變低、即變得難以進行極化。 Further, in the case of the sample of the embodiment, the relative dielectric constant ∣ ε r ∣ <1 of the metal fine particle dispersed film is considered from the viewpoint of the formula (1), and the electromagnetic wave transmitted in the metal fine particle dispersed film is assumed to be considered. In the case of speed, it becomes faster than the speed of light. However, in the final analysis, the calculated value obtained by the equation (1) derived from Maxwell's electromagnetic equation is used. Therefore, in the case of the metal fine particle dispersed film, it is assumed that it is not suitable for the electromagnetic of Maxwell. equation. Physically, there is no faster phenomenon than light, so in the physical explanation of this phenomenon, it can be explained that the relative dielectric constant associated with the polarization of the interlayer insulator becomes practically lower, that is, becomes difficult. Perform polarization.

(2)S參數測定 (2) S parameter determination

於實施例及比較例的傳送電路結構體的試樣中,進行S參數測定(測定相對於各頻率成分的損耗的大小)。 In the samples of the transfer circuit structures of the examples and the comparative examples, S-parameter measurement (measurement of the magnitude of loss with respect to each frequency component) was performed.

於實施例及比較例的傳送電路結構體的試樣中,將試樣的一端作為輸入側,將試樣的另一端作為輸出側。而且,於輸入側與輸出側分別連接康思德精密科技(Cascade Microtech)製造的Z Probe 040 K3N GSG 500,且將該Z Probe 040 K3N GSG 500經由該探針連接於安捷倫製造的向量網路分析儀(vector network analyzer)N5230A。 In the samples of the transfer circuit structures of the examples and the comparative examples, one end of the sample was used as the input side, and the other end of the sample was used as the output side. Furthermore, the Z Probe 040 K3N GSG 500 manufactured by Cascade Microtech is connected to the input side and the output side, and the Z Probe 040 K3N GSG 500 is connected to the vector network analyzer manufactured by Agilent via the probe ( Vector network analyzer)N5230A.

而且,改變頻率而將信號輸入至輸入側,針對各頻率,調查於輸出側的傳送損耗的量。 Further, the frequency is changed and a signal is input to the input side, and the amount of transmission loss on the output side is investigated for each frequency.

作為測定結果,將頻率與傳送損耗(dB)的關係示於圖6中。 As a result of the measurement, the relationship between the frequency and the transmission loss (dB) is shown in Fig. 6.

如圖6所示,實施例相對於比較例,高頻分量損耗少。特別是於20GHz,可於損耗的大小中觀察到顯著的差異。 As shown in Fig. 6, the embodiment has less loss of high frequency components than the comparative example. Especially at 20 GHz, significant differences can be observed in the magnitude of the loss.

(3)傳輸信號的上升時間的測定 (3) Determination of the rise time of the transmitted signal

假定實際的數位信號的傳送,於實施例及比較例的傳送電路結構體的試樣中,測定傳輸信號的上升時間。 Assuming that the actual digital signal is transmitted, the rise time of the transmission signal is measured in the samples of the transmission circuit structure of the embodiment and the comparative example.

於實施例及比較例的傳送電路結構體的試樣中,將試樣的一端作為輸入側,將試樣的另一端作為輸出側。而且,於輸入側與輸出側分別連接有康思德精密科技製造的Z Probe 040 K3N GSG 500。進而,經由該探針而於輸入側連接惠普(Hewlett Packard)製造的脈衝波形產生器(pulse pattern generator)8133A,且於輸出側連接安捷倫製造的數位示波器86100A。 In the samples of the transfer circuit structures of the examples and the comparative examples, one end of the sample was used as the input side, and the other end of the sample was used as the output side. Further, a Z Probe 040 K3N GSG 500 manufactured by Kent Precision Technology is connected to the input side and the output side. Further, a pulse pattern generator 8133A manufactured by Hewlett Packard was connected to the input side via the probe, and a digital oscilloscope 86100A manufactured by Agilent was connected to the output side.

於如上述般進行連接的狀態下,自輸入側輸入有時鐘信號(clock signal)。時鐘信號的電壓設為1V、頻率設為1MHz、脈衝的上升時間Tr設為36ps~44ps。 In the state of being connected as described above, a clock signal is input from the input side. The voltage of the clock signal is set to 1 V, the frequency is set to 1 MHz, and the rise time Tr of the pulse is set to 36 ps to 44 ps.

而且,利用數位示波器觀察於輸出側獲得的信號的輸出。 Moreover, the output of the signal obtained on the output side is observed using a digital oscilloscope.

作為測定結果,將時間經過與電壓的關係示於圖7中。另外,將圖7的信號的上升附近的放大圖示於圖8中。於圖8中,將0.616V設為100%而表示在其20%與80%的電壓之間經過的時間。 As a result of the measurement, the relationship between time passage and voltage is shown in FIG. In addition, an enlarged view of the vicinity of the rise of the signal of FIG. 7 is shown in FIG. In Fig. 8, 0.616 V is set to 100% to indicate the elapsed time between its voltage of 20% and 80%.

如圖7及圖8所示,實施例的試樣與比較例的試樣相比,傳輸信號的上升時間變短。根據圖8,20%→80%的經過時間在實施例中為119ps,而在比較例中為163ps。 As shown in FIGS. 7 and 8, the sample of the example has a shorter rise time of the transmission signal than the sample of the comparative example. According to Fig. 8, the elapsed time of 20% → 80% is 119 ps in the embodiment, and 163 ps in the comparative example.

即,實施例的試樣相對於比較例,傳輸信號的上升時間縮短約27%。 That is, in the sample of the example, the rise time of the transmission signal was shortened by about 27% with respect to the comparative example.

(4)高速數位信號的傳送特性評估 (4) Evaluation of transmission characteristics of high-speed digital signals

假定實際的高速數位信號的傳送,於實施例及比較例的傳送電路結構體的試樣中,測定眼孔圖案。於眼孔圖案測定中,為了 排出因特性阻抗不匹配所造成的對測定資料的影響,而以實施例的信號配線的寬度為1000μm、及比較例的信號配線的寬度為60μm者為對象來實施測定。相對於信號配線的變化來調整兩側的接地圖案的尺寸,其他尺寸、及外形尺寸保持相同的尺寸,各個特性阻抗在50±10Ω的範圍內。 The eye hole pattern was measured in the samples of the transmission circuit structures of the examples and the comparative examples, assuming the transmission of the actual high-speed digital signal. In the measurement of the eye pattern, in order to The influence on the measurement data due to the characteristic impedance mismatch was discharged, and the measurement was performed for the case where the width of the signal wiring of the example was 1000 μm and the width of the signal wiring of the comparative example was 60 μm. The size of the ground pattern on both sides is adjusted with respect to the change of the signal wiring, and the other dimensions and the outer dimensions are kept the same size, and the respective characteristic impedances are in the range of 50 ± 10 Ω.

於實施例及比較例的傳送電路結構體的試樣中,將試樣的一端作為輸入側,將試樣的另一端作為輸出側。而且,於輸入側與輸出側分別連接有接地-信號探針(CP690-01、6GHz)。進而,經由該探針而於輸入側連接有安立知(Anritsu)製造的脈衝波形產生器MP1761B,且於輸出側連接有安捷倫製造的數位示波器86100A。 In the samples of the transfer circuit structures of the examples and the comparative examples, one end of the sample was used as the input side, and the other end of the sample was used as the output side. Further, a ground-signal probe (CP690-01, 6 GHz) is connected to the input side and the output side, respectively. Further, a pulse waveform generator MP1761B manufactured by Anritsu is connected to the input side via the probe, and a digital oscilloscope 86100A manufactured by Agilent is connected to the output side.

於如上述般連接的狀態下,自輸入側輸入有振幅1V、信號傳送速率10Gbps、及擬隨機二進序列(pseudo-random binary sequence,PRBS)23段的隨機(random)信號。而且,利用數位示波器觀察於輸出側所獲得的信號。 In the state connected as described above, a random signal having an amplitude of 1 V, a signal transmission rate of 10 Gbps, and a pseudo-random binary sequence (PRBS) of 23 segments is input from the input side. Moreover, the signal obtained on the output side is observed using a digital oscilloscope.

作為測定結果,將所觀察到的實施例、比較例的眼孔圖案分別示於圖9、圖10中。如圖9及圖10所示,實施例的試樣可清楚確認出中心部的開口,相對於此,比較例的試樣完全看不見開口部。即,可認為實施例的試樣相對於比較例,高速數位信號的傳送特性大幅改善。 As a result of the measurement, the observed eye pattern of the examples and the comparative examples are shown in Figs. 9 and 10, respectively. As shown in Fig. 9 and Fig. 10, the opening of the center portion was clearly observed in the sample of the example, and the opening portion was not seen at all in the sample of the comparative example. That is, it can be considered that the sample of the example has a large improvement in the transmission characteristics of the high-speed digital signal with respect to the comparative example.

根據以上所述,可知實施例的試樣具有如下特徵,即信號的傳輸速度快、傳輸信號的上升時間短、高速數位信號的傳送特性良好。 From the above, it is understood that the sample of the embodiment has a feature that the signal transmission speed is fast, the rise time of the transmission signal is short, and the transmission characteristics of the high-speed digital signal are good.

繼而,利用電子顯微鏡觀察實施例的試樣的導電性微 粒子分散膜。於圖11及圖12中表示該導電性微粒子分散膜的照片。圖11是自側面拍攝剖面所得的照片,圖12是與圖11同樣地以約1μm間隔拍攝50個剖面並進行3維合成而成的圖像。 Then, the conductivity of the sample of the example was observed by an electron microscope. Particle dispersion film. A photograph of the conductive fine particle dispersed film is shown in Figs. 11 and 12 . Fig. 11 is a photograph obtained by photographing a cross section from the side, and Fig. 12 is an image obtained by photographing 50 cross sections at intervals of about 1 μm and performing three-dimensional synthesis in the same manner as Fig. 11 .

如圖11及圖12所示,形成有稀稀拉拉地分散有導電性微粒子的導電性微粒子分散膜。 As shown in FIG. 11 and FIG. 12, a conductive fine particle dispersion film in which conductive fine particles are dispersed and dispersed is formed.

本發明並不限定於上述實施方式或實施例,可於不脫離本發明的要旨的範圍內獲得其他各種構成。 The present invention is not limited to the above-described embodiments or examples, and various other configurations can be obtained without departing from the gist of the invention.

例如,如位於圖11的剖面般,就圖2的信號線11的實效的接地耦合(coupling)而言,接地層17遠強於接地圖案12,即,空間上的距離狹窄,故而亦可採用省略接地圖案12的微帶線(microstrip line)構造。 For example, as shown in the cross-section of FIG. 11, in terms of the effective grounding coupling of the signal line 11 of FIG. 2, the ground layer 17 is much stronger than the ground pattern 12, that is, the spatial distance is narrow, so that it can also be used. The microstrip line structure of the ground pattern 12 is omitted.

11(S)‧‧‧信號線 11(S)‧‧‧ signal line

12(G)‧‧‧接地圖案 12(G)‧‧‧ Grounding pattern

13、14、16‧‧‧絕緣層 13, 14, 16‧‧ insulation

15‧‧‧層間絕緣層 15‧‧‧Interlayer insulation

17‧‧‧接地層 17‧‧‧ Grounding layer

Claims (5)

一種傳送電路結構體,其是接觸於絕緣層的一主面而形成有信號線,並且接觸於上述絕緣層的另一主面而形成有包含導電性微粒子分散膜的接地層,上述導電性微粒子分散膜是使導電性微粒子分散於有機材料中而成。 A transmission circuit structure in which a signal line is formed in contact with a main surface of an insulating layer, and a ground layer including a conductive fine particle dispersion film is formed in contact with the other main surface of the insulating layer, and the conductive fine particles are formed The dispersion film is obtained by dispersing conductive fine particles in an organic material. 如申請專利範圍第1項所述的傳送電路結構體,其中上述導電性微粒子使用金、銀、銅、鋁、鎳、或石墨而構成。 The transmission circuit structure according to claim 1, wherein the conductive fine particles are made of gold, silver, copper, aluminum, nickel, or graphite. 如申請專利範圍第1項所述的傳送電路結構體,其中上述絕緣層使用可與構成上述導電性微粒子分散膜的有機材料在相同的溶劑中稀釋或溶解的有機材料而構成。 The transmission circuit structure according to claim 1, wherein the insulating layer is made of an organic material which can be diluted or dissolved in the same solvent as the organic material constituting the conductive fine particle dispersion film. 如申請專利範圍第1項所述的傳送電路結構體,其中上述導電性微粒子分散膜由有機絕緣膜夾持,上述有機絕緣膜使用可與構成上述微粒子分散膜的有機材料在相同的溶劑中稀釋或溶解的有機材料而構成。 The transfer circuit structure according to claim 1, wherein the conductive fine particle dispersion film is sandwiched by an organic insulating film which is diluted in the same solvent as the organic material constituting the fine particle dispersed film. Or composed of dissolved organic materials. 如申請專利範圍第1項所述的傳送電路結構體,其中接觸於上述絕緣層的上述一主面而形成有接地圖案,上述接地圖案夾著上述信號線且自上述信號線分開配置。 The transmission circuit structure according to claim 1, wherein a ground pattern is formed in contact with the one main surface of the insulating layer, and the ground pattern is disposed apart from the signal line with the signal line interposed therebetween.
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