TW201409759A - Light emitting diode device and manufacturing method thereof - Google Patents

Abstract

A light emitting diode device is provided and includes a conductive support, a light emitting diode chip, and a first conductive layer. The conductive support includes a first conductive portion, a second conductive portion, and an insulation portion for separating the first and second conductive portions. The light emitting diode chip is mounted on the second conductive portion, and a surface of the light emitting diode chip has a first electrode and a second electrode. The first conductive layer is formed on the first conductive portion and is adjacent to a side of the light emitting diode chip. A first edge of the first conductive layer is formed a bendable first conductive extending leg by machining, and an end of the first conductive is connected to the first electrode of the light emitting diode chip.

Description

Light-emitting diode device and manufacturing method thereof

The present invention relates to a light emitting diode device and a method of fabricating the same.

In general, a light emitting diode module includes a light emitting chip, a base, and a lens. The lens is covered on the light-emitting chip to make the light emitted by the light-emitting chip relatively uniform. For example, the luminescent wafer can be a blue light emitting wafer and the lens can have a yellow phosphor. When the blue light passes through the yellow phosphor, the light emitting diode module emits white light. In addition, the light emitting chip is disposed on the base, and the surface of the light emitting chip has a positive electrode contact and a negative electrode contact. The surface of the base adjacent to the light-emitting wafer has a positive conductive layer and a negative conductive layer. The positive electrode contact and the negative electrode contact of the light-emitting chip are respectively connected to the positive conductive layer and the negative conductive layer of the base by a conventional type of wire. Among them, the conventional type of wire is often fixed between the light-emitting chip and the base by wire bonding.

In this way, the light-emitting diode module forms at least four soldered contacts, which not only has high cost of the wires, but also may cause false soldering due to the large number of contacts, so that the light-emitting chips may not be electrically connected to the base. The reliability of the LED module is reduced.

One aspect of the present invention is a light emitting diode device.

According to an embodiment of the invention, a light emitting diode device includes a guide An electrical support, a light emitting diode chip and a first conductive layer. The conductive bracket has a first conductive portion, a second conductive portion, and an insulating portion. The insulating portion is for spacing the first conductive portion and the second conductive portion. The light emitting diode chip is disposed on the second conductive portion, and the surface of the light emitting diode chip has a first electrode and a second electrode. The first conductive layer is formed on the first conductive portion and on one side of the light emitting diode chip. The first edge of the first conductive layer is processed to form a bendable first conductive extension leg, and one end of the first conductive extension leg is coupled to the first electrode of the light emitting diode chip.

In an embodiment of the invention, the first conductive extension leg has a thickness of between 0.005 and 0.002 inches.

In an embodiment of the invention, the surface of the light emitting diode wafer includes an upper surface and a lower surface.

In an embodiment of the invention, the first electrode and the second electrode are respectively located on the upper surface and the lower surface of the LED wafer, and the second electrode contacts the second conductive portion.

In an embodiment of the invention, the first electrode and the second electrode are located on an upper surface of the LED body, and the LED device further includes a second conductive layer. The second conductive layer is formed on the second conductive portion and on the other side of the light emitting diode chip. The second edge of the second conductive layer is processed to form a bendable second conductive extension leg, and one end of the second conductive extension leg is coupled to the second electrode of the LED chip.

In an embodiment of the invention, the second conductive extension leg has a thickness of between 0.005 and 0.002 inches.

In an embodiment of the invention, the light emitting diode device further includes a reflective cup and an encapsulant. Reflective cup housing conductive bracket and light-emitting diode crystal sheet. The encapsulant is located in the reflective cup to cover the LED chip.

In an embodiment of the invention, the light emitting diode device further includes a lens covering the light emitting diode chip.

One aspect of the present invention is a method of fabricating a light emitting diode device.

According to an embodiment of the invention, a method of fabricating a light emitting diode device includes: (a) providing a conductive support; (b) forming a first conductive layer on the first conductive portion of the conductive support; (c) boring or cutting a first conductive layer such that a first edge of the first conductive layer forms a bendable first conductive extension leg; (d) a light emitting diode chip is disposed on the second conductive portion of the conductive support; and (e) a connection One end of a conductive extension leg is on the first electrode of the light emitting diode chip.

In an embodiment of the invention, the boring of the first conductive layer in the step (c) moves the conductive support to a position adjacent to a rotating tool such that the first conductive layer contacts the tool.

In an embodiment of the invention, the cutting the first conductive layer in the step (c) moves the tool to a position adjacent to the conductive support to contact the first conductive layer.

In an embodiment of the invention, the method for fabricating the LED device further includes immersing the first conductive layer and the tool in an oil.

In an embodiment of the invention, the step (e) includes thermally pressing or ultrasonically vibrating the first conductive extension leg, and connecting one end of the first conductive extension leg to the first electrode of the LED substrate.

In an embodiment of the invention, the method for manufacturing the LED device further includes: (f) forming a second conductive layer on the second conductive portion of the conductive holder (g) boring or cutting the second conductive layer such that the second edge of the second conductive layer forms a bendable second conductive extension leg; and (h) connecting one end of the second conductive extension leg to the light emitting diode The second electrode of the bulk wafer.

In an embodiment of the invention, the boring of the second conductive layer in the step (g) moves the conductive support to a position immediately adjacent to a rotating tool, so that the second conductive layer contacts the tool.

In an embodiment of the invention, the cutting the second conductive layer in the step (g) moves a tool to a position adjacent to the conductive holder to contact the second conductive layer.

In an embodiment of the invention, the method for fabricating the LED device further includes soaking the second conductive layer and the tool in an oil.

In an embodiment of the invention, the step (h) comprises: hot pressing or ultrasonic vibration on the second conductive extension leg, and connecting one end of the second conductive extension leg to the second electrode of the LED chip.

In an embodiment of the invention, the method for manufacturing the LED device further includes: accommodating the conductive holder and the LED chip in the reflective cup, and filling an encapsulant in the reflective cup to make the LED wafer Covered by the encapsulant.

In an embodiment of the invention, the method of manufacturing the light emitting diode device further includes disposing a lens on the conductive holder to cover the light emitting diode wafer with the lens.

In the above embodiment of the present invention, the first edge of the first conductive layer of the light emitting diode device is processed to form a bendable first conductive extending leg, and one end of the first conductive extending leg is connected to the light emitting diode The first electrode of the wafer, so the LED device does not need to be provided with an additional conventional type of guide The wires connect the first conductive layer and the light emitting diode wafer, thereby saving the cost of the wires. In addition, since there is no conventional type of wire between the first conductive layer and the light-emitting diode chip, the light-emitting diode device can reduce the joint of the solder wire and reduce the probability of occurrence of false soldering. As a result, the yield and reliability of the LED device are improved.

The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

1 is a cross-sectional view showing a light emitting diode device 100a according to an embodiment of the present invention. As shown, the LED device 100a includes a conductive support 110, a light emitting diode wafer 120, and a first conductive layer 130. The conductive bracket 110 has a first conductive portion 112 , a second conductive portion 114 , and an insulating portion 116 . The insulating portion 116 is located between the first conductive portion 112 and the second conductive portion 114 for spacing the first conductive portion 112 and the second conductive portion 114 such that the first conductive portion 112 and the second conductive portion 114 are not electrically connected. . In addition, the LED chip 120 is disposed on the second conductive portion 114, and the surface of the LED wafer 120 has a first electrode 122 and a second electrode 124. The surface of the above-described light emitting diode wafer 120 includes an upper surface 121 and a lower surface 123. The first electrode 122 and the second electrode 124 may be a positive electrode and a negative electrode, respectively, or may be a negative electrode and a positive electrode, respectively, and are not intended to limit the present invention.

In the present embodiment, the first electrode 122 and the second electrode 124 are respectively located on the upper surface 121 and the lower surface 123 of the LED wafer 120. The second electrode 124 located on the lower surface 123 contacts and electrically connects the second conductive portion 114. The first conductive layer 130 is formed on the first conductive portion 112 and located on one side of the light emitting diode wafer 120. In addition, the first edge 131 of the first conductive layer 130 is processed to form a bendable first conductive extension leg 132 , and one end 133 of the first conductive extension leg 132 is connected to the first electrode 122 of the LED chip 120 .

More specifically, the first conductive layer 130 and the first conductive extension leg 132 are a metal (for example, copper) integrally formed. The first conductive extension leg 132 can be formed by dicing or cutting the first edge 131 of the first conductive layer 130. In the present embodiment, the thickness of any section of the first conductive extension leg 132 is between 0.005 and 0.002 inches, so that the first conductive extension leg 132 has a bendable characteristic. In addition, one end 133 of the first conductive extension leg 132 may be connected to the first electrode 122 of the LED wafer 120 by hot pressing, ultrasonic vibration, or simultaneous hot pressing and ultrasonic vibration. The hot pressing process temperature is between 280 and 320 ° C, which is a high temperature wire bonding method. The process temperature of ultrasonic vibration, synchronous hot pressing and ultrasonic vibration is between 100 and 200 ° C, which is a low temperature wire bonding method. The designer can select the appropriate connection method according to actual needs, but not limited to the above connection method.

In the present embodiment, the light-emitting diode device 100a is a vertical light-emitting diode device. The first edge 131 of the first conductive layer 130 of the LED device 100a is processed to form a bendable first conductive extension leg 132, and one end 133 of the first conductive extension leg 132 is connected to the LED chip 120. First electrode 122, thus light emitting diode The device 100a does not need to provide additional conventional types of wires to connect the first conductive layer 130 and the light emitting diode chip 120, thereby saving the cost of the wires. In addition, since there is no conventional type of wire between the first conductive layer 130 and the light emitting diode chip 120, the light emitting diode device 100a can reduce the joint of the soldering wire and reduce the probability of occurrence of false soldering. Compared to conventional light-emitting diode devices (e.g., light-emitting diodes having four wire-bonded contacts), the yield and reliability of the light-emitting diode device 100a is improved.

2 is a cross-sectional view showing a light emitting diode device 100b according to an embodiment of the present invention. The light emitting diode device 100b includes a conductive support 110, a light emitting diode wafer 120, and a first conductive layer 130. The difference from the embodiment of FIG. 1 is that the first electrode 122 and the second electrode 124 are both located on the upper surface 121 of the LED array 120, and the LED device 100b further includes the second conductive layer 140.

In the embodiment, the second conductive layer 140 is formed on the second conductive portion 114 and located on the other side of the LED wafer 120. The second edge 141 of the second conductive layer 140 is processed to form a bendable second conductive extension leg 142, and one end 143 of the second conductive extension leg 142 is coupled to the second electrode 124 of the LED array 120. The second conductive layer 140 and the second conductive extension leg 142 are integrally formed metal (for example, copper), and the second conductive extension leg 142 can be formed by dicing or cutting the second edge 141 of the second conductive layer 140. The thickness of any section of the second conductive extension leg 142 is between 0.005 and 0.002 inches, such that the second conductive extension leg 142 has a bendable characteristic. In addition, the one end 143 of the second conductive extension leg 142 is connected to the second electrode 124 of the LED chip 120 and the end 133 of the first conductive extension leg 132 of the foregoing embodiment and the LED chip 120. The first electrode 122 is connected in the same manner, and therefore will not be described again.

For the sake of brevity, the component connection relationships that have been described in the above embodiments will not be repeated. In the following description, only other elements that can be included in the light-emitting diode device 100b will be described.

FIG. 3 is a cross-sectional view showing a light emitting diode device 100c according to an embodiment of the present invention. The light emitting diode device 100c includes a conductive support 110, a light emitting diode wafer 120, a first conductive layer 130 and a second conductive layer 140. The difference from the embodiment of FIG. 2 is that the LED device 100c may further include a reflective cup 150 and an encapsulant 160. The reflective cup 150 houses the conductive support 110 and the LED wafer 120 and has an opening 151. The encapsulant 160 is located in the reflective cup 150 and covers the LED wafer 120. When the LED chip 120 emits light, light can pass through the encapsulant 160 and be emitted by the opening 151 of the reflective cup 150.

In the present embodiment, the light emitting diode device 100c is a light emitting diode device of a plastic leaded chip carrier (PLCC). The encapsulant 160 may contain phosphor powder. The light emitted by the LED chip 120 can excite the phosphor in the encapsulant 160, and the LED device 100c generates light of a different color from the LED chip 120. For example, when the light emitting diode chip 120 is a blue light emitting diode chip and the encapsulant 160 contains yellow phosphor powder, the light emitting diode device 100c can emit white light. When the light emitting diode device 100c is fabricated, the conductive holder 110 and the light emitting diode chip 120 may be first placed in the reflective cup 150. The encapsulant 160 is then filled in the reflective cup 150 such that the LED wafer 120 is covered by the encapsulant 160.

4 is a diagram of a light emitting diode device according to an embodiment of the invention 100d section view. The light emitting diode device 100d includes a conductive support 110, a light emitting diode wafer 120, a first conductive layer 130 and a second conductive layer 140. The difference from the embodiment of FIG. 2 is that the light-emitting diode device 100d further includes a lens 170 covering the light-emitting diode wafer 120. When the light emitting diode chip 120 emits light, light can be emitted through the lens 170. In the present embodiment, the light-emitting diode device 100d is a light-emitting diode device of an emitter. When the light emitting diode device 100d is fabricated, the lens 170 can be disposed on the conductive support 110 such that the light emitting diode chip 120 can be covered by the lens 170.

FIG. 5 is a flow chart showing a method of manufacturing a light emitting diode device according to an embodiment of the present invention. The manufacturing method of the light emitting diode device comprises the following steps: First, in step S1, a conductive support is provided. Next, in step S2, a first conductive layer is formed on the first conductive portion of the conductive holder. Then in step S3, the first conductive layer is diced or cut such that the first edge of the first conductive layer forms a bendable first conductive extension leg. Next, in step S4, a light emitting diode chip is disposed on the second conductive portion of the conductive holder. Finally, in step S5, one end of the first conductive extension leg is connected to the first electrode of the light emitting diode chip.

The light-emitting diode device 100a of Fig. 1 can be produced through steps S1 to S5. However, when the light emitting diode device 100b of FIG. 2 is fabricated, the following steps are further included: forming a second conductive layer on the second conductive portion of the conductive support; boring or cutting the second conductive layer to make the second conductive a second edge of the layer forming a bendable second conductive extension leg; and a second electrode connecting the end of the second conductive extension leg to the light emitting diode chip.

In the following description, the first guide of the light-emitting diode device will be described in detail. The manner in which the electrical extension leg and the second conductive extension leg are formed. However, the first conductive extension leg is formed in the same manner as the second conductive extension leg, and therefore is mainly described by the first conductive extension leg, which will be described first.

FIG. 6 is a schematic view showing the conductive support 110 moving toward the cutter 180. FIG. 7 is a schematic view showing the cutter 180 of FIG. 6 dicing the first conductive layer 130. Referring to FIGS. 6 and 7, the first edge 131 of the first conductive layer 130 is formed by boring to form a bendable first conductive extension leg 132. The boring of the first conductive layer 130 means moving the conductive support 110 to a position adjacent to a rotating tool 180 such that the first conductive layer 130 contacts the tool 180.

In the present embodiment, the cutter 180 is rotated in the direction D1 at a fixed position, and the conductive bracket 110 can be moved toward the cutter 180 in the direction D2 by a moving carrier (not shown). When the first conductive layer 130 on the first conductive portion 112 of the conductive support 110 contacts the tool 180, the cutter 180 boring the first conductive layer 130 such that the first edge 131 of the first conductive layer 130 forms a bendable portion A conductive extension leg 132.

FIG. 8 is a schematic view showing the second conductive portion 114 of FIG. 7 after the light emitting diode wafer 120 is disposed. After the first conductive extension leg 132 of the first conductive layer 130 is formed, the LED wafer 120 may be disposed on the second conductive portion 114 of the conductive bracket 110. Then, one end 133 of the first conductive extension leg 132 can be connected to the first electrode 122 of the LED array 120 by hot pressing, ultrasonic vibration, or synchronous hot pressing and ultrasonic vibration. The light emitting diode device 100a is shown in Fig. 1.

FIG. 9 is a schematic view showing the tool 180 of FIG. 6 after the first conductive layer 130 and the second conductive layer 140 are diced. Figure 10 shows the second guide of Figure 9. The electric portion 114 is provided with a schematic view after the LED chip 120 is disposed. Referring to FIG. 9 and FIG. 10 , after the first conductive extension leg 132 of the first conductive layer 130 and the second conductive extension leg 142 of the second conductive layer 140 are formed, the LED chip 120 can be disposed on the conductive bracket. On the second conductive portion 114 of 110. Then, one end 133 of the first conductive extending leg 132 and one end 143 of the second conductive extending leg 142 are respectively connected to the light emitting diode by hot pressing, ultrasonic vibration, or synchronous hot pressing and ultrasonic vibration. The first electrode 122 and the second electrode 124 of the wafer 120 can obtain the light-emitting diode device 100b shown in FIG.

FIG. 11 is a schematic view showing the cutter 180 boring the first conductive layer 130 in the squeegee 192. The oil groove 190 houses the oil 192, and the first conductive layer 130 and the cutter 180 are immersed in the oil 192. The tool 180 is rotated in the direction of D1 in the oil 192, and the conductive holder 110 is moved in the oil 192 by the moving stage (not shown) to the tool 180 in the direction D2.

When the first conductive layer 130 on the first conductive portion 112 of the conductive support 110 contacts the tool 180, the cutter 180 boring the first conductive layer 130. The cooling performance of the eucalyptus oil 192 is good, and not only the excessive temperature generated when the cutter 180 boring the first conductive layer 130 is prevented, but also the debris generated by the boring of the first conductive layer 130 can be quickly precipitated.

FIG. 12 is a schematic view showing the movement of the tool 200 toward the first conductive layer 130. FIG. 13 is a schematic view showing the cutting of the first conductive layer 130 by the cutter 200 of FIG. Referring also to FIGS. 12 and 13, the first edge 131 of the first conductive layer 130 is formed to form a bendable first conductive extension leg 132 in a cutting manner. Cutting the first conductive layer 130 means moving the tool 200 to a position in close proximity to the conductive holder 110 such that the tool 200 contacts the first conductive layer 130.

In the present embodiment, the cutter 200 moves in the direction D3, and the conductive holder 110 does not move. When the tool 200 contacts the first conductive layer 130 on the first conductive portion 112 of the conductive support 110, the cutter 200 cuts the first conductive layer 130 such that the first edge 131 of the first conductive layer 130 forms a bendable first Conductive extension legs 132.

Since the second conductive extension leg is formed in the same manner as the first conductive extension leg, reference may be made to the manner in which the first conductive extension leg is formed. When the light-emitting diode device 100b of FIG. 2 is fabricated, a second conductive layer is first formed on the second conductive portion of the conductive holder. Next, the second conductive layer is diced or cut such that the second edge of the second conductive layer forms a bendable second conductive extension leg. Thereafter, one end of the second conductive extension leg is connected to the second electrode of the light emitting diode chip. Wherein the boring of the second conductive layer moves the conductive support to a position adjacent to a rotating tool such that the second conductive layer contacts the tool. Cutting the second conductive layer moves a tool to a position adjacent to the conductive support such that the tool contacts the second conductive layer. In addition, the second conductive layer and the tool can be immersed in an oil for boring or cutting. When one end of the second conductive extension leg is connected to the second electrode of the LED body, the second conductive extension leg can be connected to the LED by thermal compression or ultrasonic vibration. The second electrode of the bulk wafer.

The above embodiment of the present invention is compared with the prior art in that the edge of the conductive layer of the light-emitting diode device is processed to form a bendable conductive extension leg, and one end of the conductive extension leg is connected to the electrode of the light-emitting diode wafer, The LED device does not require an additional conventional type of wire to connect the conductive layer to the LED chip, thereby saving the cost of the wire. In addition, compared with conventional light-emitting diode devices having four wire solder joints, The conductive layer of the light-emitting diode device and the light-emitting diode wafer do not have a conventional type of wire, but the conductive extension leg of the conductive layer is used to connect the light-emitting diode chip, so that the light-emitting diode device can reduce soldering The junction of the wires reduces the chance of false soldering. As a result, the yield and reliability of the LED device are improved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

100a‧‧‧Lighting diode device

100b‧‧‧Lighting diode device

100c‧‧‧Lighting diode device

100d‧‧‧Lighting diode device

110‧‧‧conductive bracket

112‧‧‧First Conductive Department

114‧‧‧Second Conductive Department

116‧‧‧Insulation

120‧‧‧Light Emitter Wafer

121‧‧‧ upper surface

122‧‧‧First electrode

123‧‧‧ lower surface

124‧‧‧second electrode

130‧‧‧First conductive layer

131‧‧‧First edge

132‧‧‧First conductive extension foot

133‧‧‧ one end

140‧‧‧Second conductive layer

141‧‧‧ second edge

142‧‧‧Second conductive extension foot

143‧‧‧ one end

150‧‧‧Reflection Cup

151‧‧‧ openings

160‧‧‧Package

170‧‧‧ lens

180‧‧‧Tools

190‧‧‧ oil tank

192‧‧‧矽 oil

200‧‧‧Tools

D1‧‧ Direction

D2‧‧ Direction

D3‧‧ Direction

S1‧‧‧ steps

S2‧‧‧ steps

S3‧‧‧ steps

S4‧‧‧ steps

S5‧‧ steps

1 is a cross-sectional view showing a light emitting diode device according to an embodiment of the present invention.

2 is a cross-sectional view showing a light emitting diode device according to an embodiment of the present invention.

3 is a cross-sectional view showing a light emitting diode device according to an embodiment of the present invention.

4 is a cross-sectional view showing a light emitting diode device according to an embodiment of the present invention.

FIG. 5 is a flow chart showing a method of manufacturing a light emitting diode device according to an embodiment of the present invention.

Figure 6 is a schematic view showing the conductive support moving toward the tool.

Figure 7 is a schematic view showing the tool of Figure 6 when the first conductive layer is diced.

FIG. 8 is a schematic view showing the second conductive portion of FIG. 7 after the light emitting diode wafer is disposed.

FIG. 9 is a schematic view showing the tool of FIG. 6 after the first conductive layer and the second conductive layer are diced.

FIG. 10 is a schematic view showing the second conductive portion of FIG. 9 after the light emitting diode chip is disposed.

Figure 11 is a schematic view showing the cutter boring the first conductive layer in the eucalyptus oil.

Figure 12 is a schematic view showing the movement of the tool toward the first conductive layer.

Figure 13 is a schematic view showing the cutting of the first conductive layer by the tool of Figure 12.

100a‧‧‧Lighting diode device

110‧‧‧conductive bracket

112‧‧‧First Conductive Department

114‧‧‧Second Conductive Department

116‧‧‧Insulation

120‧‧‧Light Emitter Wafer

121‧‧‧ upper surface

122‧‧‧First electrode

123‧‧‧ lower surface

124‧‧‧second electrode

130‧‧‧First conductive layer

131‧‧‧First edge

132‧‧‧First conductive extension foot

133‧‧‧ one end

Claims (22)

A light-emitting diode device comprising: a conductive support having a first conductive portion, a second conductive portion and an insulating portion for spacing the first conductive portion and the second conductive portion; a light emitting diode chip The second conductive portion is disposed on the second conductive portion, and the surface of the light emitting diode chip has a first electrode and a second electrode; and a first conductive layer is formed on the first conductive portion and located on the light emitting One side of the polar body wafer, wherein a first edge of the first conductive layer is processed to form a bendable first conductive extending leg, and one end of the first conductive extending leg is connected to the light emitting diode chip The first electrode. The light emitting diode device of claim 1, wherein the first conductive extending leg has a thickness of between 0.005 and 0.002 inches. The light emitting diode device of claim 1, wherein the surface of the light emitting diode chip comprises an upper surface and a lower surface. The illuminating diode device of claim 3, wherein the first electrode and the second electrode are respectively located on the upper surface and the lower surface of the illuminating diode chip, and the second electrode contacts the second surface Conductive part. The illuminating diode device of claim 3, wherein the first electrode and the second electrode are located on the upper surface of the illuminating diode chip, and The light emitting diode device further includes: a second conductive layer formed on the second conductive portion and located on the other side of the light emitting diode chip, wherein a second edge of the second conductive layer is processed a second conductive extension leg bendable, and one end of the second conductive extension leg is connected to the second electrode of the LED chip. The light emitting diode device of claim 5, wherein the second conductive extending leg has a thickness of between 0.005 and 0.002 inches. The illuminating diode device of claim 1, further comprising: a reflective cup accommodating the conductive support and the illuminating diode chip; and an encapsulant disposed in the reflective cup to cover the illuminating illuminator Polar body wafer. The illuminating diode device of claim 1, further comprising: a lens covering the illuminating diode chip. A method for manufacturing a light emitting diode device, comprising: (a) providing a conductive support; (b) forming a first conductive layer on a first conductive portion of the conductive support; (c) boring or cutting the first a conductive layer, the first edge of the first conductive layer forming a bendable first conductive extension leg; (d) disposing a light emitting diode chip on a second conductive portion of the conductive holder; and (e) connecting one end of the first conductive extending leg to a first electrode of the light emitting diode chip. The method of manufacturing the illuminating diode device of claim 9, wherein the puncturing the first conductive layer in the step (c) moves the conductive support to a position adjacent to a rotating cutter to make the first conductive The layer contacts the tool. The method for manufacturing a light-emitting diode device according to claim 10, further comprising: immersing the first conductive layer and the cutter in an oil. The method of manufacturing the illuminating diode device of claim 9, wherein the cutting the first conductive layer in the step (c) moves a tool to a position adjacent to the conductive support, so that the tool contacts the first conductive Floor. The method for manufacturing a light-emitting diode device according to claim 12, further comprising: immersing the first conductive layer and the cutter in an oil. The method for manufacturing a light-emitting diode device according to claim 9, wherein the step (e) comprises: hot pressing or ultrasonic vibration on the first conductive extending leg, so that the first guiding One end of the electric extension leg is connected to the first electrode of the LED chip. The method of manufacturing the illuminating diode device of claim 9, further comprising: (f) forming a second conductive layer on the second conductive portion of the conductive support; (g) boring or cutting the second a conductive layer such that a second edge of the second conductive layer forms a bendable second conductive extension leg; and (h) a second end connecting the second conductive extension leg to the second of the LED chip electrode. The method of manufacturing the light-emitting diode device of claim 15, wherein the puncturing the second conductive layer in the step (g) moves the conductive support to a position adjacent to a rotating cutter to make the second conductive The layer contacts the tool. The method for manufacturing a light-emitting diode device according to claim 16, further comprising: immersing the second conductive layer and the cutter in an oil. The method of manufacturing the light-emitting diode device of claim 15, wherein the cutting the second conductive layer in the step (g) moves a tool to a position adjacent to the conductive holder, so that the tool contacts the second conductive Floor. A method of manufacturing a light-emitting diode device according to claim 18, The method further comprises: immersing the second conductive layer and the cutter in an oil. The method of manufacturing the illuminating diode device of claim 15, wherein the step (h) comprises: hot pressing or ultrasonic vibration on the second conductive extending leg, connecting one end of the second conductive extending leg to the The second electrode of the LED chip. The method for manufacturing a light-emitting diode device according to claim 9, further comprising: accommodating the conductive support and the LED chip in a reflective cup; and filling an encapsulant in the reflective cup to make the The light emitting diode chip is covered by the encapsulant. The method for manufacturing a light-emitting diode device according to claim 9, further comprising: providing a lens on the conductive holder such that the light-emitting diode wafer is covered by the lens.