TW201406697A - 陶瓷體及其製造方法 - Google Patents

陶瓷體及其製造方法 Download PDF

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Publication number
TW201406697A
TW201406697A TW102109518A TW102109518A TW201406697A TW 201406697 A TW201406697 A TW 201406697A TW 102109518 A TW102109518 A TW 102109518A TW 102109518 A TW102109518 A TW 102109518A TW 201406697 A TW201406697 A TW 201406697A
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Taiwan
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ceramic body
clay
weight
calcination
ceramic
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TW102109518A
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English (en)
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TWI586627B (zh
Inventor
Hiroyuki Mori
Mikio Idei
Shigeki Takami
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Mitsuishi Taika Renga Kabushiki Kaisha
Dowa F Tec Co Ltd
Dowa Electronics Materials Co
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    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21FPROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
    • G21F1/00Shielding characterised by the composition of the materials
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Abstract

本發明呈現具有大密度、高強度且展現優異輻射屏蔽效應之陶瓷體及其製造方法。陶瓷體係藉由以下步驟獲得:將鐵氧體粉末以60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之該密度為3.5g/cm3且該輻射屏蔽效應得以增強。使用由組成式Ao˙nX2O3表現之鐵氧體粉末(然而,應注意,在該組成式中,A係一或多種類型之選自以下之元素:Mg、Ca、Mn、Co、Ni、Cu、Sr、Ba或Pb,X係一或多種類型之選自Fe、Co或Ni之元素,且n係定義為1至9之整數之莫耳比)。

Description

陶瓷體及其製造方法
本發明係關於具有大密度、高強度且展現優異輻射屏蔽效應之陶瓷體及該陶瓷體之製造方法。
核電廠事故後已遭放射性物質污染之廢料之暫時性儲存設備不足已成問題。期望已遭放射性物質污染之廢物之暫時性儲存設備係由高度緻密混凝土形成之壁圍繞以屏蔽該等廢料發射之輻射。然而,當壁係由混凝土形成時,需要經受以下系列操作:(1)設置範本(form),(2)在該範本中配置鋼筋,(3)將混凝土傾倒至該範本中,(4)固化混凝土,及(5)移出該範本,但問題係此需要工作、時間及成本。此外,亦存在混凝土之荒冷外觀有礙觀瞻的問題。該等問題係構建已遭放射性物質污染之廢料之暫時性儲存設備無進展之原因之一。
與此相反,陶瓷體具有(例如)以下事實之優點:可僅藉由將一個砌於另一個頂部簡單地進行構建而無需範本、構建後之外觀良好、展現高程度強度且具有優異抗震性及諸如此類,且廣泛用作建築材料。然而,由於普通陶瓷體之密度低約2.2g/cm3,因此無法預期其作為以上所闡述之暫時性儲存設備之外殼有令人滿意之輻射屏蔽效應。為論證起見,若使用陶瓷體製造暫時性儲存設備之外殼,則需要將陶瓷體堆疊成多層或增加每一個別陶瓷體之厚度,且事實上此存在成本更高 之風險。若存在密度高且輻射屏蔽效應強之陶瓷體則將有利,但尚未發現此種陶瓷體。
順便而言,已提出藉由使混凝土含有鐵氧體來增加密度且提高輻射屏蔽效應之技術(例如,參考專利參考文獻1及2)。鐵氧體係一種含有鐵氧化物之磁性材料且廣泛用於多種電子組件(例如馬達磁鐵、用於影印機及雷射印表機之粉鼓、磁盤、磁帶及諸如此類)中,但在專利參考文獻1及2之輻射屏蔽材料之情形中,焦點在於高密度(輻射屏蔽效應)而非鐵氧體具有之磁性。然而,在專利參考文獻1及2中未提及任何關於將鐵氧體包含於陶瓷體中及增加陶瓷體之輻射屏蔽效應之內容,此甚至亦未曾暗示。陶瓷體及混凝土具有共通性,在於兩者皆用作建築材料,但製造方法(具體而言,存在或不存在焙燒)、材料(組合物)、形式、構建方法及諸如此類不同且其係完全不同之事物。
此外,在專利參考文獻3中已提出複數種含有鐵氧體之陶瓷材料經層壓且焙燒之陶瓷體。然而,在專利參考文獻3之陶瓷體中,焦點並不在於鐵氧體所具有之密度而在於鐵氧體所具有之電磁特徵且並未超出屏蔽行動電話及個人電腦所發射之電磁波之目的。換言之,在專利參考文獻3中未提及任何關於增加陶瓷體之密度及增強輻射屏蔽效應之內容,此甚至亦未曾暗示。
先前技術參考文獻 專利參考文獻
<專利參考文獻1>日本特許專利申請公開案(Kokai)第57-016397號[(第2頁,右上方區域,第8至15列及第2頁,右下方區域,第16至20列)]
<專利參考文獻2>日本特許專利申請公開案(Kokai)第2002-26779號(申請專利範圍)
<專利參考文獻3>日本特許專利申請公開案(Kokai)第2008-094966號 (申請專利範圍及第0002段、第0005段、第0030段及第0033段)
本發明之目的係解決以上所闡述之問題且呈現具有大密度、高強度且展現優異輻射屏蔽效應之陶瓷體。此外,本發明之目的係容易地在短時間段內構建輻射屏蔽結構以屏蔽輻射且最小化構建成本。此外,本發明之目的亦係改良已構建之輻射屏蔽結構之外觀且維持該輻射屏蔽結構周圍之風景。此外,本發明之目的亦係呈現具有大密度、高強度且展現優異輻射屏蔽效應之陶瓷體之製造方法。
藉由呈現陶瓷體且藉由呈現陶瓷體之製造方法來解決以上所闡述之問題,該陶瓷體之特徵在於焙燒後之密度(總體密度;下同)為3.5g/cm3或更大且輻射屏蔽效應增強,該輻射屏蔽效應係藉由在將鐵氧體粉末以60wt%或更大之比例混合至黏土中且使黏土形成指定形狀後焙燒黏土來增強。
藉由以此方式混入鐵氧體粉末及焙燒可增加密度且提供展現優異輻射屏蔽效應之陶瓷體。因此,可僅藉由壘砌陶瓷體容易地在短時間段內構建輻射屏蔽結構,例如用於圍繞已遭放射性物質污染之廢料之暫時性儲存設備之結構及諸如此類。此外,可獲得具有高強度之陶瓷體。特定而言,與用於普通建築中之不含鐵氧體之陶瓷體之強度(35至50MPa/cm2)相比,本發明之含有60wt%或更大比例之鐵氧體粉末之陶瓷體的強度係160至334MPa/cm2此約為用於普通建築中之陶瓷體的5或6倍。參見表4。因此,可構建具有優異抗震性之結構。此外,可使已構建結構之外觀與周圍景觀相協調且不妨礙觀瞻。此外,如已論述,鐵氧體用於多種電子組件中。因此,在製造製程或處置製程中會產生含有鐵氧體之廢料,且可將自廢料收集之鐵氧體用作本發 明陶瓷體之原材料,從而促進廢料之有效利用。
本發明陶瓷體及其製造方法中之鐵氧體粉末之類型(組成式)並無具體限制,只要可使焙燒後之陶瓷體密度為3.5g/cm3或更大即可,但通常所採用之鐵氧體粉末係由組成式AO˙nX2O3表現。
然而,應注意,在前述組成式中,n係定義為1至9之整數之莫耳比。
此外,在前述組成式中,A係一或多種類型之選自以下之元素:鎂(Mg)、鈣(Ca)、錳(Mn)、鈷(Co)、鎳(Ni)、銅(Cu)、鍶(Sr)、鋇(Ba)或鉛(Pb),但具體而言,較佳係一或多種類型之選自Sr、Ba或Pb之元素。此乃因Sr、Ba及Pb之原子序(質量數)大於其他元素且該等展現更優異輻射屏蔽效應。
此外,在前述組成式中,X係一或多種類型之選自鐵(Fe)、鈷(Co)或鎳(Ni)之元素,但Fe尤佳。Fe比Co或Ni之成本要低且實用。
在本發明之陶瓷體及其製造方法中對於混合鐵氧體粉末之黏土之類型並無具體限制,只要該黏土可用作陶瓷體之原材料即可。例如,具有一或多種類型之選自氧化鋁(Al2O3)、二氧化矽(SiO2)或氧化硼(B2O3)之氧化物作為主要組份之黏土具有例示性。特定而言,可給出高嶺石(Al2Si2O5(OH)4)、埃洛石(Al2Si2O5(OH)4˙2H2O)及諸如此類作為實例。
此外,本發明之陶瓷體焙燒溫度及陶瓷體焙燒時間以及其製造方法端視黏土及混合至黏土中之鐵氧體粉末之類型以及焙燒溫度與焙燒時間之間之平衡及諸如此類而不同且並無具體限制。然而,當考慮陶瓷體中所含有之鐵氧體之熔點及陶瓷體之強度時,則通常將陶瓷體之焙燒溫度設定為1,000℃至1,400℃且通常將焙燒時間設定為50至150小時。但焙燒時間實質上可更短,包含短至3小時之時間。
此外,本發明陶瓷體及其製造方法中之鐵氧體粉末之粒徑並無 具體限制。然而,當考慮鐵氧體粉末製造之簡易性、鐵氧體粉末與黏土混合之簡易性及混入鐵氧體粉末後黏土之造模性時,則通常使鐵氧體粉末之粒徑為0.5μm至8mm。出乎意料的是,在此範圍內,粒徑介於0.5μm與20μm之間之精細粒子甚至佔陶瓷體重量之95%時,亦會產生具有最大比重之焙燒陶瓷體,且無裂紋或尺寸精確度之問題。該等結果與陶瓷工業教示相抵觸,該等教示強調在陶瓷體中使用粒徑之廣泛且混合分佈非常重要。例如,參見Easy to Understand Industrial Ceramics,第99-102/516頁;作者:Youichi Shiraki;Gihodo Shuppan 有限公司出版,1-3-6,Akasaka,Minato Ward,Tokyo,1969年6月30日。
如上文所論述,根據本發明,可呈現具有大密度、展示高強度且展現優異輻射屏蔽效應之陶瓷體。此外,可容易地在短時間段內構建用於屏蔽輻射之輻射屏蔽結構且亦可最小化構建成本。此外,可改良已構建之輻射屏蔽結構之外觀且維持該輻射屏蔽結構周圍之風景。此外,亦可呈現具有大密度、展示高強度且展現優異輻射屏蔽效應之陶瓷體之製造方法。
本發明之較佳實施例
本發明之陶瓷體及其製造方法之概述.將對本發明之陶瓷體及其製造方法之較佳實施例給出進一步特定解釋。本發明之陶瓷體係經受以下而產生:(1)混合製程,其中將鐵氧體粉末以60wt%或更大之比例與黏土混合, (2)模製製程,其中使已在混合製程中混合有鐵氧體粉末之黏土形成指定形狀,及(3)焙燒製程,其中焙燒已在模製製程中模製成指定形狀之黏土。
可製造焙燒後具有3.5g/cm3或更大之密度(此遠大於普通陶瓷體之密度,約2.2g/cm3)且展現優異輻射屏蔽效應之陶瓷體。
順便而言,根據傳播形式、波長(能量)、產生源及諸如此類將輻射分類成粒子輻射(例如阿爾法(α)射線、貝他(β)射線、中子射線及諸如此類)及電磁波(例如伽馬(γ)射線、X射線及諸如此類)。使用本發明之陶瓷體可屏蔽所有以上所給出之輻射,但已假定屏蔽該等中具有強穿透性之γ射線及X射線。由於γ射線及X射線並不具有電荷且呈電中性,因此不可藉助電磁相互作用使其衰減。屏蔽γ射線及X射線時有必要使用高密度材料,且本發明之陶瓷體可展現屏蔽γ射線及X射線之優異效應。
下文將以上文所闡述製程之順序給出關於本發明之陶瓷體及其製造方法之較佳實施例之詳細解釋。
1. 混合製程
混合製程係將鐵氧體粉末混合至黏土中之製程。在本發明之較佳實施例中,對於鐵氧體粉末,使用在將氧化鐵(Fe2O3)及多種添加劑與諸如碳酸鍶(SrCO3)、碳酸鋇(BaCO3)及諸如此類等材料混合且造粒並焙燒後經壓碎及磨碎之物項。此外,使用球黏土,其係一種類型之高嶺石。
鐵氧體粉末之混合比例並無具體限制,只要該比例係60wt%或更大即可。然而,當考慮增加所獲得陶瓷體之密度且除提高陶瓷體之密度以外亦增強其輻射屏蔽效應時,較佳使鐵氧體粉末之混合比例儘可能地高。特定而言,鐵氧體粉末之混合比例較佳係70wt%或更大, 更佳係80wt%或更大,且甚至更佳係85wt%或更大。另一方面,若使鐵氧體粉末之混合比例過高,則黏土之混合比例必然變低,處在未經焙燒狀態中之陶瓷體之可塑性降低,且使該陶瓷體形成指定形狀變得困難。因此,使鐵氧體粉末之混合比例為97wt%或更小。鐵氧體粉末之混合比例較佳係96wt%或更小且更佳係95wt%或更小。
此外,如上文所論述,通常使混合至黏土中之鐵氧體粉末之粒徑為0.5μm至8mm。較佳使鐵氧體粉末之粒徑為1μm或更大,更佳為2μm或更大,且甚至更佳為3μm或更大。另一方面,若鐵氧體粉末之粒徑過大,則存在模製已添加粉末之黏土將變困難之風險。此外,亦可能將難以使鐵氧體粉末均勻混合至黏土中。因此,較佳使鐵氧體粉末之粒徑為8mm或更小,更佳為4mm或更小,且甚至更佳為2mm或更小。在本發明之較佳實施例中,使鐵氧體粉末之粒徑為0.5至20μm且平均值為約5μm。已出乎意料地發現,在彼等範圍內,介於0.5μm與20μm之間之粒子佔60%或更大(以重量計)之焙燒前陶瓷體可行且具有最大比重。參見下文Effects of Ferrite Granule Size Distribution on Specific Gravity in Fired Ceramic Bodies,Compounds A-D。此外,彼等包括平均粒徑介於3與600微米之間且包含3微米及600微米之鐵氧體者最佳。因此,在較佳實施例中,陶瓷體包括鐵氧體粉末且大小介於0.5μm與20μm之間之粒子佔陶瓷體重量之至少60%,更佳佔其重量之至少70%;仍更佳佔其重量之至少80%;仍更佳佔其重量之至少90%;且最佳佔其重量之至少95%。儘管不甚合意,但粒徑介於0.5μm與600μm之間之相對較窄混合物亦可有益地佔陶瓷體重量之至少60%;更佳至少70%;仍更佳至少80%;仍更佳至少90%;且最佳至少95%。平均鐵氧體粒徑較佳介於3與600微米之間且包含3微米及600微米。所得焙燒陶瓷體最佳具有大於150Mpa之抗壓強度及大於3.5g/立方公分之密度。
若將製造含有鐵氧體之產品(電子組件,例如馬達磁鐵、用於影印機及雷射印表機之粉鼓、磁盤、磁帶及諸如此類)時所獲得之廢棄物或將處置該等產品時所產生之廢料用於鐵氧體粉末時,則可為廢料之有效利用制定計劃。
2. 模製製程
上文所闡述之混合製程結束時接著實施模製製程。模製製程係使已在混合製程中混合有鐵氧體粉末之黏土形成指定形狀之製程。黏土模製方法並無具體限制,但此通常係使用壓機來實施。若此時在真空下實施壓縮(在減壓下;真空壓縮),則將使黏土緻密,焙燒後之陶瓷體密度將進一步增加,且可獲得展現更優異輻射屏蔽效應之陶瓷體。
根據陶瓷體之應用來適宜地確定黏土所形成之形狀及尺寸。關於黏土所形成之形狀,可給出之實例包含長方體(包含立方體或四邊形板)、圓柱體(包含圓盤)、組合該等之形狀及諸如此類。在預期插入鋼筋穿過陶瓷體之內部之情形中,可形成穿孔或凹槽以供在形成陶瓷體時通過鋼筋。可將陶瓷體上之設計(例如形成圖案化凹痕及諸如此類)施加至模製後之黏土表面。
3. 焙燒製程
上文所闡述之模製製程結束時接著實施焙燒製程。焙燒製程係焙燒已在模製製程中形成指定形狀之黏土之製程。如上文所論述,陶瓷體之焙燒溫度通常係1,000℃至1,400℃。然而,若使陶瓷體之焙燒溫度過低,則可能陶瓷體之焙燒不能令人滿意且焙燒後之陶瓷體將容易斷裂。因此,較佳使陶瓷體之焙燒溫度為1,100℃或以上且更佳為1,200℃或以上。另一方面,若陶瓷體之焙燒溫度過高,則存在黏土或已混合至黏土中之鐵氧體粉末將熔化且陶瓷體將不能夠經焙燒之危險。因此,較佳使陶瓷體之焙燒溫度為1,350℃或以下。在本發明之 較佳實施例中,使陶瓷體之焙燒溫度為約1,300℃。
此外,如上文所論述,陶瓷體之焙燒時間通常係50至150小時,但可使用短至3小時之時間。然而,若陶瓷體之焙燒時間過短,則可能陶瓷體之焙燒不能令人滿意且焙燒後之陶瓷體將容易斷裂。因此,較佳使陶瓷體之焙燒時間為60小時或更長。更佳為70小時或更長且最佳為80小時或更長。另一方面,若陶瓷體之焙燒時間過長,則存在將使因焙燒引起之收縮加強且將使尺寸精確度降低之危險。因此,較佳使陶瓷體之焙燒時間為120小時或更短且更佳為100小時或更短。在本發明之較佳實施例中,使陶瓷體之焙燒時間(自插入焙燒爐(隧道窯)中直至移出之時間)為96小時。
4. 完成
上文所闡述之焙燒製程結束時即完成製陶瓷體。焙燒後之陶瓷體密度係3.5g/cm3且遠大於普通陶瓷體之密度。因此,本發明之陶瓷體可展現優於普通陶瓷體之輻射屏蔽效應。此外,本發明之陶瓷體具有高於普通陶瓷體之強度。
較佳使焙燒後之陶瓷體密度儘可能地高以進一步增加所獲得陶瓷體之輻射屏蔽效應及強度。特定而言,較佳使焙燒後之陶瓷體密度為3.8g/cm3或更大,更佳為4.0g/cm3或更大,甚至更佳為4.2g/cm3或更大,且最佳為4.3g/cm3或更大。在後來所論述之工作實例1之陶瓷體中,使焙燒後之密度為約4.20g/cm3。若應用上文所論述之方案(例如真空壓機)來模製陶瓷體,則可使密度大於此密度(例如4.5g/cm3或更大)。另一方面,焙燒後之陶瓷體密度之上限並無具體限制,但除非將密度大於鐵氧體粉末之材料混合至陶瓷體中,否則不可能使密度大於鐵氧體粉末之密度(通常約4.6至5.1g/cm3)。
工作實例 5. 輻射屏蔽效力之評估
製作工作實例1至3之陶瓷體及比較實例1至4之陶瓷體以研究本發明陶瓷體之輻射屏蔽效應,且評估每一各別陶瓷體之輻射屏蔽效力。對於工作實例1至3之陶瓷體及比較實例1及2之陶瓷體而言,如下表1中所顯示混合以下物質:鍶˙鐵氧體(SrO˙6Fe2O3)、鋇˙鐵氧體(BaO˙6Fe2O3)、球黏土(高嶺石)、硼酸(B(OH)3)、N3(壓碎焙燒黏土與生黏土之混合物,組成係64wt%之二氧化矽(SiO2)、32wt%之氧化鋁(Al2O3)及2wt%之氧化鐵(III)(Fe2O3))及鉻鐵礦(FeCr2O4)或錳(Mn)。對於未納入下表1中之比較實例3及4之陶瓷體而言,比較實例3之陶瓷體係普通市售陶瓷體(不含鐵氧體之陶瓷體)且比較實例4之陶瓷體係市售水泥陶瓷體(不含鐵氧體之水泥陶瓷體)。使工作實例1至3及比較實例1至4中之陶瓷體之尺寸相同且使厚度(輻射傳輸方向之厚度)一致為60mm。此外,出於參考目的,將前述表1中之鍶˙鐵氧體之組份分數納入下表2中。在下表2中,在括弧中之數值指示其係外割百分比(outer percentage)。[技術說明:「外割百分比」之定義參見http://www.patent-de.com/20070419/EP1760049.html。然而,在表2中並沒有在括弧中之數值]。
藉助以下方法評估工作實例1至3之陶瓷體及比較實例1至4之陶瓷體之輻射屏蔽效應。即,在工作實例1至3之陶瓷體及比較實例1至4之陶瓷體中之每一者之底部上展開輻射敏感薄膜(由Fuji Film製造之「工業用X射線薄膜IX100」),在輻射照射每一陶瓷體之頂部表面固定時間段後量測每一各別薄膜之敏感性(單色影像中之黑色之深度)。使用光密度計(由Konica Minolta製造之「Sakura PDA-81光密度計」)量測薄膜黑色之深度。採用兩種類型之輻射,即X射線及γ射線。γ射線之輻射源係192Ir。由於陶瓷體之輻射屏蔽效應越大,到達薄膜之輻 射量越小且薄膜無感測(顏色由白色變成黑色),故藉由前文所述之光密度計所量測之深度之數值較小。工作實例1至3之陶瓷體及比較實例1至4之陶瓷體之總體密度及用X射線及γ射線分別照射該等陶瓷體中之每一者時薄膜深度之數值顯示於下表3中。
然而,應注意,前述表3中之薄膜深度之值係使用以下所給出之等式1計算之無因次量D。在以下等式1中,L0係來自前文所述之光密度計中之觀測光照射部分之用以照射薄膜之觀測光之亮度(cd/m2),且L係薄膜反射且由前文所述之光密度計之光接受器部分接受之反射光之亮度(cd/m2)。
表述1
D=log10(L0/L)...等式1
看前述表3,在用X射線照射不含鐵氧體之比較實例3及4之陶瓷體之情形中之薄膜深度皆係4.5,且在用γ射線照射相同比較實例3及4之陶瓷體之情形中之薄膜深度皆係1.7。另一方面,儘管用X射線照射鐵氧體含量為10wt%及25wt%之比較實例1及2之陶瓷體之情形中之薄膜深度(2.8及3.8)比不含鐵氧體之比較實例3及4之陶瓷體之情形中之薄膜深度(4.5)有一定程度的減小,但用γ射線照射比較實例1及2之 陶瓷體之情形中之薄膜深度(1.5)與用γ射線照射比較實例3及4之陶瓷體之情形中之薄膜深度(1.7)相比幾乎無減小。自此事實可清楚得出,與不含鐵氧體之比較實例3及4之陶瓷體相比,儘管確定鐵氧體含量為10%及25%之比較實例1及2之陶瓷體對X射線具有一定屏蔽效應,但亦確定其對γ射線幾乎無屏蔽效應。
與此相反,與用X射線照射不含鐵氧體之比較實例3及4之陶瓷體之情形中之薄膜深度(4.5)相比,用X射線照射含有87wt%至90wt%之鐵氧體之工作實例1至3之陶瓷體之情形中之薄膜深度(0.4至0.7)減小至約1/10。此外,與用γ射線照射不含鐵氧體之比較實例3及4之陶瓷體之情形中之薄膜深度(1.7)相比,用γ射線照射含有87wt%至90wt%之鐵氧體之工作實例1至3之陶瓷體之情形中之薄膜深度(0.8至0.9)減小至約一半。自此事實可清楚得出,與比較實例3及4之陶瓷體對X射線及γ射線之屏蔽效應相比,含有87wt%至90wt%[原文如此]之鐵氧體之工作實例1至3之陶瓷體展現相當優異之屏蔽效應。
如下文所顯示,眾多實例具有遠大於普通陶瓷體之抗壓強度。
6. 應用
對於本發明之陶瓷體,關於其應用並無具體限制,但如上文所闡述,由於其展現極優異輻射屏蔽效應,因此可將其適當地用於需要屏蔽輻射之應用(構建輻射屏蔽結構)中。具體而言,其可適宜地用於屏蔽具有強穿透力之輻射(例如X射線、γ射線及諸如此類)之應用中。此外,由於本發明之陶瓷體可容易地在短時間段內加工,因此其可適宜地用於立即需要之應用中。例如,可將其適宜地用作構建已遭放射性物質污染之廢料之暫時性儲存設備之外殼結構時之構建用陶瓷體。預期,藉由使用本發明之陶瓷體可解決核電廠事故後已遭放射性物質污染之廢料之暫時性儲存設備不足之問題。
粒徑分佈對焙燒陶瓷體比重之影響
實施一系列測試來測定粒徑分佈對焙燒陶瓷體比重之影響。令人驚奇地發現所有測試範圍皆可行,但最精細、差異最小之粒子分佈範圍具有最佳結果。
a. 化合物A
-0.6mm Sr-鐵氧體顆粒:47.5%
平均粒徑(APD):1.19μm;範圍介於0.5μm與20μm之間
Sr-鐵氧體粉末:47.5%
球黏土:5%
甲基羥乙基纖維素(Mecellose):0.2%
木質磺酸鹽:0.5%
水:1.5%
b. 化合物B
0.6-2.0mm Sr.-鐵氧體顆粒:47.5%
Sr-鐵氧體粉末:47.5%
球黏土:5%
甲基羥乙基纖維素:0.2%
木質磺酸鹽:0.5%
水:1.5%
c. 化合物C
2.0mm-Sr-鐵氧體顆粒:47.5%
Sr-鐵氧體粉末:47.5%
球黏土:5%
甲基羥乙基纖維素:0.2%
木質磺酸鹽:0.5%
水:1.5%
d. 化合物D
Sr-鐵氧體粉末:95%
球黏土:5%
甲基羥乙基纖維素:0.2%
木質磺酸鹽:0.5%
水:1.5%
結果:燃燒體之比重列示於下文中。
化合物A:4.15g/cm3
化合物B:3.58g/cm3
化合物C:3.45g/cm3
化合物D:4.58g/cm3
結論:在粒徑與燃燒收縮比之間且因此在粒徑與比重之間存在明顯的逆相關。具有接近唯一精細(0.5μm至20μm)之鐵氧體粒子之 焙燒陶瓷體甚至在該等粒子佔焙燒前陶瓷體重量之高達95%時亦可行。其他實驗已發現平均焙燒前鐵氧體粒徑較佳大於3微米但小於600微米。在平均焙燒前鐵氧體粒徑為0.98微米至3.8微米之範圍中,平均焙燒前鐵氧體粒徑越大,焙燒陶瓷體之比重越大。但對於平均焙燒前鐵氧體粒徑大於600微米,如上文所顯示,此趨勢並非如此。最佳焙燒陶瓷體含有前述實施例及方法之鐵氧體且具有大於3.8g/立方公分之比重及大於150Mpa之抗壓強度。

Claims (40)

  1. 一種陶瓷體,其特徵在於藉由將鐵氧體粉末以60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且輻射屏蔽效應得以增強。
  2. 如請求項1之陶瓷體,其中該鐵氧體粉末係由組成式AO˙nX2O3表現(然而,應注意,在該組成式中,A係一或多種類型之選自以下之元素:Mg、Ca、Mn、Co、Ni、Cu、Sr、Ba或Pb,X係一或多種類型之選自Fe、Co或Ni之元素,且n係定義為1至9之整數之莫耳比)。
  3. 如請求項2之陶瓷體,其中在該前文所述之組成式中A係一或多種類型之選自Sr、Ba或Pb之元素。
  4. 如請求項2或3之陶瓷體,其中在該前文所述之組成式中X係Fe。
  5. 如請求項1至4中任一項之陶瓷體,其中該黏土具有一或多種類型之選自Al2O3、SiO2或B2O3之氧化物作為主要組份。
  6. 如請求項1至5中任一項之陶瓷體,其中焙燒溫度係1,000℃至1,400℃且焙燒時間係50小時至150小時。
  7. 如請求項1至6中任一項之陶瓷體,其中該鐵氧體粉末之粒徑係5μm至8mm。
  8. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且輻射屏蔽效應得以增強。
  9. 一種陶瓷體,其包括焙燒黏土及鐵氧體粉末,其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之60%或更大,且焙燒後之密度為至少3.5g/cm3
  10. 如請求項9之陶瓷體,其中該等粒子之組成係由組成式AO˙nX2O3來表現;A係一或多種類型之選自以下之元素:Mg、Ca、Mn、Co、Ni、Cu、Sr、Ba或Pb,X係一或多種類型之選自Fe、Co或Ni之元素,且n係定義為1至9之整數之莫耳比。
  11. 如請求項9之陶瓷體,其中在該前文所述之組成式中A係一或多種類型之選自Sr、Ba或Pb之元素。
  12. 如請求項10或11之陶瓷體,其中在該前文所述之組成式中X係Fe。
  13. 如請求項9至12中任一項之陶瓷體,其中該黏土具有一或多種類型之選自Al2O3、SiO2或B2O3之氧化物作為主要組份。
  14. 如請求項9至13中任一項之陶瓷體,其中焙燒溫度係1,000℃至1,400℃且焙燒時間係介於3小時與150小時之間。
  15. 如請求項9至13中任一項之陶瓷體,其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之70%或更大。
  16. 如請求項9至13中任一項之陶瓷體,其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之80%或更大。
  17. 如請求項9至13中任一項之陶瓷體,其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之90%或更大。
  18. 如請求項9至13中任一項之陶瓷體,其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之95%或更大。
  19. 一種陶瓷體,其包括焙燒黏土及鐵氧體粉末,其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之60%或更大,且焙燒後之密度為至少3.5g/cm3
  20. 如請求項19之陶瓷體,其中該等粒子之組成係由組成式AO˙nX2O3來表現;A係一或多種類型之選自以下之元素:Mg、Ca、Mn、Co、Ni、Cu、Sr、Ba或Pb,X係一或多種類型之選自Fe、 Co或Ni之元素,且n係定義為1至9之整數之莫耳比。
  21. 如請求項20之陶瓷體,其中在該前文所述之組成式中A係一或多種類型之選自Sr、Ba或Pb之元素。
  22. 如請求項20或21或11之陶瓷體,其中在該前文所述之組成式中X係Fe。
  23. 如請求項19至22中任一項之陶瓷體,其中該黏土具有一或多種類型之選自Al2O3、SiO2或B2O3之氧化物作為主要組份。
  24. 如請求項19至23中任一項之陶瓷體,其中焙燒溫度係1,000℃至1,400℃且焙燒時間係介於3小時與150小時之間。
  25. 如請求項19至23中任一項之陶瓷體,其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之70%或更大。
  26. 如請求項19至23中任一項之陶瓷體,其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之80%或更大。
  27. 如請求項19至23中任一項之陶瓷體,其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之90%或更大。
  28. 如請求項19至23中任一項之陶瓷體,其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之95%或更大。
  29. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之60%或更大。
  30. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之60%或更大。
  31. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得: 將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之70%或更大。
  32. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之70%或更大。
  33. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之80%或更大。
  34. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之80%或更大。
  35. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之90%或更大。
  36. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之90%或更大。
  37. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小 介於0.5μm與20μm之間之粒子佔該陶瓷體重量之95%或更大。
  38. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之95%或更大。
  39. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與20μm之間之粒子佔該陶瓷體重量之至少95%且小於98%。
  40. 一種陶瓷體之製造方法,其特徵在於陶瓷體係藉由以下獲得:將鐵氧體粉末以至少60wt%之比例混合至黏土中,形成指定形狀後焙燒該黏土,使焙燒後之密度為3.5g/cm3且其中焙燒前大小介於0.5μm與600μm之間之粒子佔該陶瓷體重量之至少95%且小於98%。
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