TW201405892A - LED device and method for manufacturing the same - Google Patents
LED device and method for manufacturing the same Download PDFInfo
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Abstract
Description
本發明係關於一種發光二極體裝置及其製作方法，尤指一種具有散熱基板之發光二極體裝置及其製作方法。
The present invention relates to a light emitting diode device and a manufacturing method thereof, and more particularly to a light emitting diode device having a heat dissipating substrate and a manufacturing method thereof.
在傳統的高功率發光二極體封裝製程技術當中，通常將發光二極體(LED)單元固定於導線架(lead frame)上，然後再焊於散熱基板上。當注入高電流來驅動發光二極體時，整體封裝結構上會產生極高的溫度，若無法有效將熱能適時排出，將會因散熱不佳的關係而產生熱飽合現象，導致發光二極體產生光衰減的現象。
In the conventional high-power LED packaging process technology, a light-emitting diode (LED) unit is usually fixed on a lead frame and then soldered to a heat-dissipating substrate. When a high current is injected to drive the light-emitting diode, an extremely high temperature is generated in the overall package structure. If the heat energy cannot be effectively discharged at a proper time, heat saturation will occur due to poor heat dissipation, resulting in a light-emitting diode. The body produces a phenomenon of light attenuation.
本發明之一目的，在於提供一種發光二極體裝置及其製作方法，尤指一種具有散熱基板之發光二極體裝置及其製作方法。
本發明之另一目的，在於提供一種發光二極體裝置及其製作方法，可減少製作流程、縮短製作時間並降低生產成本。
本發明提供一種發光二極體裝置之製作方法，包含：形成一發光二極體單元；提供一金屬板材；將金屬板材以沖壓成型形成一散熱基板，散熱基板具有一中心部及一周圍部；及將發光二極體單元結合於散熱基板之中心部。
上述製作方法之一實施例，其中發光二極體單元包含有至少一發光二極體結構及耦接該至少一發光二極體結構的至少一電極單元。
上述製作方法之一實施例，其中各發光二極體單元更包含有一基材，位於發光二極體結構下方其中該基材為一導電基材，接觸該散熱基板，使該導電基材與該散熱基板形成一第一電極單元。
上述製作方法之一實施例，其中散熱基板為一杯狀構造，其中心部凹陷被周圍部圍繞。
上述製作方法之一實施例，其中散熱基板之沖壓成型步驟之後，更包含：於散熱基板表面形成一反射層之步驟。
上述製作方法之一實施例，其中該發光二極體單元與散熱基板結合之步驟之後，更包含：將至少一導線連接至對應電極單元之步驟。
上述製作方法之一實施例，其中散熱基板之中心部設有至少一穿孔。其中至少一導線通過至少一穿孔。至少一穿孔中分別填設一絕緣材料，用以隔離導線與散熱基板。
上述製作方法之一實施例，其中發光二極體結構包含有一第一摻雜層、一第二摻雜層及形成於第一摻雜層與第二摻雜層間之主動層。
上述製作方法之一實施例，其中第二摻雜層直接接觸散熱基板，以散熱基板為一第一電極單元，第一摻雜層上具有一第二電極單元。
本發明尚提供一種發光二極體裝置，包含有：一發光二極體單元，發光二極體單元包含有至少一電極單元；一散熱基板，設有一中心部及一周圍部，其中，中心部與發光二極體單元結合，並設有至少一穿孔；及至少一導線，導線之一端分別連接對應之至少一電極單元，另一端通過對應之穿孔。
上述發光二極體裝置之一實施例，其中散熱基板為一杯狀構造，其中心部凹陷被周圍部圍繞。
上述發光二極體裝置之一實施例，其中至少一穿孔中分別填設一絕緣材料，用以隔離導線與散熱基板。
上述發光二極體裝置之一實施例，其中散熱基板之表面設有一反射層。
上述發光二極體裝置之一實施例，其中散熱基板係以銅、金、銀、鋁、鎳、錫、鈦、白金、鈀、鎢、鉬及其組合材料之其中之一製作。
An object of the present invention is to provide a light emitting diode device and a manufacturing method thereof, and more particularly to a light emitting diode device having a heat dissipating substrate and a manufacturing method thereof.
Another object of the present invention is to provide a light-emitting diode device and a method of fabricating the same, which can reduce the manufacturing process, shorten the production time, and reduce the production cost.
The present invention provides a method for fabricating a light-emitting diode device, comprising: forming a light-emitting diode unit; providing a metal plate; forming a heat-dissipating substrate by stamping the metal plate, the heat-dissipating substrate having a central portion and a peripheral portion; And bonding the light emitting diode unit to the central portion of the heat dissipation substrate.
In one embodiment of the manufacturing method, the LED unit includes at least one LED structure and at least one electrode unit coupled to the at least one LED structure.
An embodiment of the above manufacturing method, wherein each of the light emitting diode units further comprises a substrate under the light emitting diode structure, wherein the substrate is a conductive substrate, contacting the heat dissipating substrate, and the conductive substrate is The heat dissipation substrate forms a first electrode unit.
An embodiment of the above manufacturing method, wherein the heat dissipation substrate has a cup-like configuration, and a central portion of the depression is surrounded by the surrounding portion.
In one embodiment of the manufacturing method, after the step of forming the heat-dissipating substrate, the method further comprises the step of forming a reflective layer on the surface of the heat-dissipating substrate.
An embodiment of the manufacturing method, wherein the step of combining the LED unit with the heat dissipation substrate further comprises the step of connecting at least one wire to the corresponding electrode unit.
In one embodiment of the manufacturing method, the central portion of the heat dissipation substrate is provided with at least one through hole. At least one of the wires passes through at least one of the perforations. At least one of the through holes is filled with an insulating material for isolating the wires from the heat dissipation substrate.
An embodiment of the above manufacturing method, wherein the light emitting diode structure comprises a first doped layer, a second doped layer and an active layer formed between the first doped layer and the second doped layer.
In one embodiment of the manufacturing method, the second doped layer directly contacts the heat dissipation substrate, wherein the heat dissipation substrate is a first electrode unit, and the first doped layer has a second electrode unit.
The invention further provides a light emitting diode device, comprising: a light emitting diode unit, the light emitting diode unit comprises at least one electrode unit; a heat dissipating substrate, a central portion and a surrounding portion, wherein the central portion And the light emitting diode unit is combined with at least one through hole; and at least one wire, one end of the wire is respectively connected to the corresponding at least one electrode unit, and the other end is through the corresponding through hole.
An embodiment of the above light-emitting diode device, wherein the heat-dissipating substrate has a cup-like configuration, and a central portion of the recess is surrounded by the surrounding portion.
In one embodiment of the above-mentioned light-emitting diode device, at least one of the through holes is filled with an insulating material for isolating the wires and the heat-dissipating substrate.
An embodiment of the above light emitting diode device, wherein a surface of the heat dissipation substrate is provided with a reflective layer.
An embodiment of the above light-emitting diode device, wherein the heat-dissipating substrate is made of one of copper, gold, silver, aluminum, nickel, tin, titanium, platinum, palladium, tungsten, molybdenum and a combination thereof.
請參閱第１圖及第２圖，係分別為本發明發光二極體裝置之製作方法流程圖及發光二極體裝置一實施例之剖面。如圖所示，本發明之發光二極體裝置製作方法首先係形成一發光二極體單元22，其中二極體單元22可為晶片或晶粒形式，如步驟12。另提供一金屬板材(未顯示)，並將金屬板材以沖壓成型的方式形成一散熱基板24，如步驟14。其中，該散熱基板24包含有一中心部241及一周圍部243。最後，則將發光二極體單元22結合於散熱基板24之中心部241，形成本發明之發光二極體裝置20，如步驟16。其中，發光二極體單元22結合於散熱基板24方式可透過一結合介質於兩者之間，其結合方式例如:使用共晶材料(例如Au-Sn、Au-Au、In-Au結合介質)的共晶製程、或使用銀膠、可固化膠材的黏貼製程、或使用錫膏、SnAgCu等的回焊製程。
在本發明之一實施例中，發光二極體單元22分別包含有至少一發光二極體結構220及耦接發光二極體結構220的至少一電極單元(例如第一電極單元227及第二電極單元229)。其中，發光二極體結構220包含有一第一摻雜層223、一第二摻雜層225及形成於該第一摻雜層223與第二摻雜層225之間的主動層224。第一電極單元227及第二電極單元229分別位於第一摻雜層223、一第二摻雜層225上方，當一電壓差施加於該第一電極單元227與第二電極單元229之間時，第一摻雜層223中之第一載子(未顯示)與第二摻雜層225中之第二載子(未顯示)將被電壓驅動而移動，並於主動層224中結合而發光。
在本發明之一實施例中，發光二極體單元22尚包含有一基材221，用以承載發光二極體結構220與電極單元227、229。在本實施例中，該基材221為非導體，並且為發光二極體單元22與散熱基板結合之部位。
在本發明之一實施例中，散熱基板24為杯狀構造，其中心部241凹陷，周圍部243則凸起並圍繞於中心部241之周圍。
在本發明之一實施例中，該散熱基板24 (金屬板材)可選擇以銅、金、銀、鋁、鎳、錫、鈦、白金、鈀、鎢、鉬及其組合材料之其中之一製作。可利用其材質之高導熱性或高散熱效率即時並有效的將發光二極體單元22所產生熱量加以傳導及消散。其中，部分材料具有高反射率，例如金、銀、鋁、鎳、錫、白金等，尚可利用散熱基板24之杯狀構造，將發光二極體單元22所產生的光線往杯口的方向反射，形成聚光的效果，藉以提高發光二極體裝置20之出光量。
在本發明之一實施例中，若散熱基板24使用之材質反射率較差，例如銅、鈦、鈀、鎢、鉬等，則本發明之製作方法尚包含有一於散熱基板24之表面形成一反射層245之步驟，藉以提高散熱基板24之反射率。其中，該反射層245可選擇以金、銀、鋁、錫及鎳之其中之一製作。
在本發明之一實施例中，尚可於發光二極體單元22與散熱基板24結合之步驟16之後，包含一將至少一導線(261、263)連接至對應電極單元(227、229)之步驟。可藉由導線261、263連接至電源供應裝置(未顯示)，用以提供發光二極體裝置20所需之電壓。
請參閱第３圖，係本發明發光二極體裝置另一實施例之剖面示意圖。如圖所示，本實施例發光二極體裝置30之構造與第２圖所述實施例大致相同。在本實施例中，散熱基板34同樣具有一中心部341及一周圍部343，但其中心部341設有至少一穿孔345。本實施例之導線36之一端連接於發光二極體單元32之第二電極單元329，另一端則通過該穿孔345而連接至電源供應裝置(未顯示)。利用本實施例之構造，除了可減少導線36所需的長度之外，尚可防止導線36因外露而導致於移動或裝配中脫落。
在本發明之一實施例中，尚可於穿孔345中填入一絕緣材料38，可用以固定導線36，並可確保導線36與散熱基板34為電性隔絕。
在本發明之一實施例中，可將第３圖中之基材421移除，發光二極體單元32直接以發光二極體結構320中第一摻雜層323與散熱基板34結合，利用散熱基板34做為第一電極單元使用。因此，本實施例之發光二極體裝置30只需將散熱基板34與導線36連接至一電源供應裝置，即可於發光二極體結構320之第一摻雜層323與第二摻雜層325之間提供一電壓差，令第一載子與第二載子於主動層324結合而發光。
在本發明之一實施例中，尚可於該第一摻雜層323之下方設置一基材321，其基材321直接使用導電基材，並以導電基材與散熱基板34結合，形成另一個電極單元使用。因此，本實施例之發光二極體裝置30只需將散熱基板34與導線36連接至一電源供應裝置，即可於發光二極體結構320之第一摻雜層323與第二摻雜層325之間提供一電壓差，令第一載子與第二載子於主動層324結合而發光。
請參閱第４圖，係本發明發光二極體裝置又一實施例之剖面示意圖。如圖所示，本實施例發光二極體裝置40之構造與前述實施例大致相同。在本實施例中，發光二極體單元42可為複數個發光二極體結構(例如第一發光二極體結構423及第二發光二極體結構427)的堆疊(stacking)構造。其中第一發光二極體結構423設於基材421上，並設有第一電極單元428。第一發光二極體結構423與第二發光二極體結構427之間設有一穿遂接面425。第二發光二極體結構427上則設有第二電極單元429。
在本發明之一實施例中，散熱基板44之中心部341設有兩個穿孔345、447。導線461、463之一端分別連接對應之電極單元428、429，另一端分別通過穿孔345、447設置。並可於各穿孔345、447中分別填入一絕緣材料38，用以固定各導線461、463，並可確保各導線461、463與散熱基板44為電性隔離。
利用本發明發光二極體裝置之製作方法及發光二極體裝置20、30及40之構造，可減少發光二極體裝置之製作流程、縮短製作時間、降低生產成本，並可確保散熱效果與提高產品之生產良率。
以上所述者，僅為本發明之實施例而已，並非用來限定本發明實施之範圍，即凡依本發明申請專利範圍所述之形狀、構造、特徵、方法及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
Please refer to FIG. 1 and FIG. 2 , which are respectively a flow chart of a method for fabricating a light-emitting diode device and a cross section of an embodiment of a light-emitting diode device. As shown in the figure, the method for fabricating the LED device of the present invention first forms a light-emitting diode unit 22, wherein the diode unit 22 can be in the form of a wafer or a die, as in step 12. A metal plate (not shown) is further provided, and the metal plate is formed into a heat dissipating substrate 24 by stamping, as in step 14. The heat dissipation substrate 24 includes a central portion 241 and a peripheral portion 243. Finally, the light emitting diode unit 22 is bonded to the central portion 241 of the heat dissipation substrate 24 to form the light emitting diode device 20 of the present invention, as in step 16. The light-emitting diode unit 22 is coupled to the heat-dissipating substrate 24 so as to be transparent to the medium by a bonding medium, for example, using a eutectic material (for example, Au-Sn, Au-Au, In-Au combined medium). The eutectic process, or the adhesive process using silver paste, curable adhesive, or the reflow process using solder paste, SnAgCu, etc.
In one embodiment of the present invention, the LED unit 22 includes at least one LED structure 220 and at least one electrode unit (eg, the first electrode unit 227 and the second) coupled to the LED structure 220. Electrode unit 229). The LED structure 220 includes a first doped layer 223 , a second doped layer 225 , and an active layer 224 formed between the first doped layer 223 and the second doped layer 225 . The first electrode unit 227 and the second electrode unit 229 are respectively located above the first doping layer 223 and the second doping layer 225, when a voltage difference is applied between the first electrode unit 227 and the second electrode unit 229. The first carrier (not shown) in the first doped layer 223 and the second carrier (not shown) in the second doped layer 225 will be driven to be driven by voltage and combined to emit light in the active layer 224. .
In an embodiment of the invention, the LED unit 22 further includes a substrate 221 for carrying the LED structure 220 and the electrode units 227 and 229. In the embodiment, the substrate 221 is a non-conductor and is a portion where the light-emitting diode unit 22 is combined with the heat dissipation substrate.
In one embodiment of the present invention, the heat dissipation substrate 24 has a cup-like configuration with its central portion 241 recessed, and the peripheral portion 243 is convex and surrounds the periphery of the central portion 241.
In an embodiment of the invention, the heat dissipation substrate 24 (metal plate) may be selected from one of copper, gold, silver, aluminum, nickel, tin, titanium, platinum, palladium, tungsten, molybdenum and combinations thereof. . The heat generated by the light-emitting diode unit 22 can be conducted and dissipated in an instant and effective manner by utilizing the high thermal conductivity or high heat dissipation efficiency of the material. Among them, some materials have high reflectivity, such as gold, silver, aluminum, nickel, tin, platinum, etc., and the cup-like structure of the heat-dissipating substrate 24 can be utilized to direct the light generated by the light-emitting diode unit 22 toward the cup mouth. The reflection forms an effect of collecting light, thereby increasing the amount of light emitted from the light-emitting diode device 20.
In an embodiment of the present invention, if the material used for the heat dissipation substrate 24 has a poor reflectance, such as copper, titanium, palladium, tungsten, molybdenum, etc., the method of the present invention further includes forming a reflection on the surface of the heat dissipation substrate 24. The step of layer 245 is to increase the reflectivity of the heat sink substrate 24. The reflective layer 245 can be selected from one of gold, silver, aluminum, tin, and nickel.
In an embodiment of the present invention, after the step 16 of combining the LED unit 22 and the heat dissipation substrate 24, the method includes: connecting at least one wire (261, 263) to the corresponding electrode unit (227, 229). step. It can be connected to a power supply device (not shown) by wires 261, 263 for providing the voltage required for the light-emitting diode device 20.
Please refer to FIG. 3, which is a cross-sectional view showing another embodiment of the light-emitting diode device of the present invention. As shown in the figure, the structure of the light-emitting diode device 30 of the present embodiment is substantially the same as that of the embodiment described in FIG. In the present embodiment, the heat dissipation substrate 34 also has a central portion 341 and a peripheral portion 343, but the central portion 341 is provided with at least one through hole 345. One end of the wire 36 of the present embodiment is connected to the second electrode unit 329 of the LED unit 32, and the other end is connected to a power supply device (not shown) through the through hole 345. With the configuration of the present embodiment, in addition to reducing the length required for the wire 36, it is possible to prevent the wire 36 from coming off during movement or assembly due to exposure.
In an embodiment of the present invention, an insulating material 38 may be filled in the through hole 345 to fix the wire 36 and ensure that the wire 36 is electrically isolated from the heat dissipation substrate 34.
In an embodiment of the present invention, the substrate 421 in FIG. 3 can be removed, and the LED unit 32 is directly combined with the heat dissipation substrate 34 in the first doped layer 323 of the LED structure 320. The heat dissipation substrate 34 is used as a first electrode unit. Therefore, the LED device 30 of the present embodiment only needs to connect the heat dissipation substrate 34 and the wire 36 to a power supply device, that is, the first doping layer 323 and the second doping layer of the LED structure 320. A voltage difference is provided between 325 such that the first carrier and the second carrier are combined in the active layer 324 to emit light.
In an embodiment of the present invention, a substrate 321 is disposed under the first doped layer 323, and the substrate 321 directly uses a conductive substrate, and the conductive substrate is combined with the heat dissipation substrate 34 to form another substrate. One electrode unit is used. Therefore, the LED device 30 of the present embodiment only needs to connect the heat dissipation substrate 34 and the wire 36 to a power supply device, that is, the first doping layer 323 and the second doping layer of the LED structure 320. A voltage difference is provided between 325 such that the first carrier and the second carrier are combined in the active layer 324 to emit light.
Please refer to FIG. 4, which is a cross-sectional view showing still another embodiment of the light-emitting diode device of the present invention. As shown in the figure, the configuration of the light-emitting diode device 40 of the present embodiment is substantially the same as that of the foregoing embodiment. In this embodiment, the LED unit 42 can be a stacking structure of a plurality of LED structures (eg, the first LED structure 423 and the second LED structure 427). The first LED structure 423 is disposed on the substrate 421 and is provided with a first electrode unit 428. A through-contact surface 425 is disposed between the first light-emitting diode structure 423 and the second light-emitting diode structure 427. A second electrode unit 429 is disposed on the second LED structure 427.
In one embodiment of the invention, the central portion 341 of the heat sink substrate 44 is provided with two perforations 345, 447. One ends of the wires 461, 463 are respectively connected to the corresponding electrode units 428, 429, and the other ends are respectively disposed through the through holes 345, 447. An insulating material 38 is respectively filled in each of the through holes 345 and 447 for fixing the wires 461 and 463, and the wires 461 and 463 are electrically isolated from the heat dissipation substrate 44.
By using the manufacturing method of the light-emitting diode device and the structure of the light-emitting diode devices 20, 30 and 40, the manufacturing process of the light-emitting diode device can be reduced, the production time can be shortened, the production cost can be reduced, and the heat dissipation effect can be ensured. Improve the production yield of products.
The above is only the embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the equivalent changes and modifications of the shapes, structures, features, methods and spirits described in the claims of the present invention. All should be included in the scope of the patent application of the present invention.
12~16．．．步驟12~16. . . step
20．．．發光二極體裝置20. . . Light-emitting diode device
22．．．發光二極體單元twenty two. . . Light-emitting diode unit
220．．．發光二極體結構220. . . Light-emitting diode structure
221．．．基材221. . . Substrate
223．．．第一摻雜層223. . . First doped layer
224．．．主動層224. . . Active layer
225．．．第二摻雜層225. . . Second doped layer
227．．．第二電極單元227. . . Second electrode unit
229．．．第二電極單元229. . . Second electrode unit
24．．．散熱基板twenty four. . . Heat sink substrate
241．．．中心部241. . . Central department
243．．．周圍部243. . . Surrounding part
245．．．反射層245. . . Reflective layer
261．．．導線261. . . wire
263．．．導線263. . . wire
30．．．發光二極體裝置30. . . Light-emitting diode device
32．．．發光二極體單元32. . . Light-emitting diode unit
320．．．發光二極體結構320. . . Light-emitting diode structure
321．．．導電基材321. . . Conductive substrate
323．．．第一摻雜層323. . . First doped layer
324．．．主動層324. . . Active layer
325．．．第二摻雜層325. . . Second doped layer
329．．．第二電極單元329. . . Second electrode unit
34．．．散熱基板34. . . Heat sink substrate
341．．．中心部341. . . Central department
343．．．周圍部343. . . Surrounding part
345．．．穿孔345. . . perforation
36．．．導線36. . . wire
38．．．絕緣材料38. . . Insulation Materials
40．．．發光二極體裝置40. . . Light-emitting diode device
42．．．發光二極體單元42. . . Light-emitting diode unit
421．．．基材421. . . Substrate
423．．．第一發光二極體結構423. . . First light emitting diode structure
425．．．穿遂接面425. . . Piercing joint
427．．．第二發光二極體結構427. . . Second light emitting diode structure
428．．．第一電極單元428. . . First electrode unit
429．．．第二電極單元429. . . Second electrode unit
44．．．散熱基板44. . . Heat sink substrate
447．．．穿孔447. . . perforation
461．．．導線461. . . wire
463．．．導線463. . . wire
第１圖：係本發明發光二極體裝置之製作方法流程圖。
第２圖：係本發明發光二極體裝置一實施例之剖面示意圖。
第３圖：係本發明發光二極體裝置另一實施例之剖面示意圖。
第４圖：係本發明發光二極體裝置又一實施例之剖面示意圖。
Fig. 1 is a flow chart showing a method of fabricating a light-emitting diode device of the present invention.
Fig. 2 is a schematic cross-sectional view showing an embodiment of the light-emitting diode device of the present invention.
Fig. 3 is a schematic cross-sectional view showing another embodiment of the light-emitting diode device of the present invention.
Fig. 4 is a cross-sectional view showing still another embodiment of the light-emitting diode device of the present invention.
12~16．．．步驟12~16. . . step
Claims (14)
形成一發光二極體單元；
提供一金屬板材；
將該金屬板材以沖壓成型形成一散熱基板，該散熱基板具 有一中心部及一周圍部；及
將該發光二極體單元結合於該散熱基板之該中心部。A method for manufacturing a light emitting diode device, comprising:
Forming a light emitting diode unit;
Providing a metal sheet;
The metal plate is formed into a heat dissipation substrate by press molding, the heat dissipation substrate has a central portion and a peripheral portion, and the light emitting diode unit is coupled to the central portion of the heat dissipation substrate.
一發光二極體單元，該發光二極體單元包含有至少一電極 單元；
一散熱基板，設有一中心部及一周圍部，其中，該中心部 與該發光二極體單元結合，並設有至少一穿孔；及
至少一導線，該至少一導線之一端連接對應之該至少一電 極單元，另一端通過對應之該至少一穿孔。A light emitting diode device comprising:
a light emitting diode unit, the light emitting diode unit comprising at least one electrode unit;
a heat dissipating substrate is provided with a central portion and a peripheral portion, wherein the central portion is coupled to the LED unit and is provided with at least one through hole; and at least one wire, and one end of the at least one wire is connected to the at least one of the wires An electrode unit, the other end of which passes through the corresponding at least one perforation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101126018A TW201405892A (en) | 2012-07-19 | 2012-07-19 | LED device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101126018A TW201405892A (en) | 2012-07-19 | 2012-07-19 | LED device and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201405892A true TW201405892A (en) | 2014-02-01 |
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| TW101126018A TW201405892A (en) | 2012-07-19 | 2012-07-19 | LED device and method for manufacturing the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI774542B (en) * | 2021-08-27 | 2022-08-11 | 艾姆勒車電股份有限公司 | Liquid-cooled heat-dissipation substrate with partial reinforcement structure |
-
2012
- 2012-07-19 TW TW101126018A patent/TW201405892A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI774542B (en) * | 2021-08-27 | 2022-08-11 | 艾姆勒車電股份有限公司 | Liquid-cooled heat-dissipation substrate with partial reinforcement structure |
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