TW201401470A - 使用外部驅動器ｉｃ之雙電力轉換器封裝 - Google Patents

使用外部驅動器ｉｃ之雙電力轉換器封裝 Download PDF

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TW201401470A
TW201401470A TW102106561A TW102106561A TW201401470A TW 201401470 A TW201401470 A TW 201401470A TW 102106561 A TW102106561 A TW 102106561A TW 102106561 A TW102106561 A TW 102106561A TW 201401470 A TW201401470 A TW 201401470A
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package
control
synchronous
control fet
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TWI492353B (zh
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Eung-San Cho
Dan Clavette
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Int Rectifier Corp
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Abstract

揭示雙電力轉換器封裝。該封裝包括引線框架，其具有第一控制FET承座，被組構成支撐第一控制FET的汲極；以及第二控制FET承座，被組構成支撐第二控制FET的汲極。該引線框架另包括同步FET承座，被組構成支撐第一同步FET的源極和第二同步FET的源極；以及第一複數個接點，被組構成從該引線框架外部的驅動器積體電路(IC)接收用於該控制FET的每一個與該同步FET的每一個之控制訊號。該引線框架可額外包括第一和第二切換節點，被組構成分別透過第一扣夾來電連接到該第一控制FET和該第一同步FET，及透過第二扣夾來電連接到該第二控制FET和該第二同步FET。

Description

使用外部驅動器IC之雙電力轉換器封裝
本發明係關於使用外部驅動器IC之雙電力轉換器封裝。
隨著電子裝置的尺寸縮減，內部電路封裝同樣需要縮減尺寸並且提供增加的電流密度和電流容量。此外，許多電子裝置需要多個內部電力供應電壓。然而，諸如習知降壓轉換器等的習知電力供應設計典型上包括由專屬控制IC所控制之半橋式電路。如此，多個內部電力供應典型上需要多個半橋式電路，其各個受各自控制IC所控制。然而，包括單一半橋式電路和專屬控制IC之習知電力供應封裝需要比只有半橋式電路或專屬控制IC大上許多的實體佈局。結果，利用多個習知電力供應封裝非常沒有空間效率，同時亦具有令人不滿意的低電流和電力密度，並且在電子裝置中需要較大的實體佈局。
本揭示係針對使用外部驅動器IC之雙電力轉換器封裝，實質上如連同圖式的至少其中之一所圖解及/或說明一般，在申請專利範圍將更完整陳述。
100‧‧‧雙電力轉換器封裝
200‧‧‧雙電力轉換器封裝
105‧‧‧引線框架
120‧‧‧外部驅動器積體電路
205‧‧‧引線框架
116‧‧‧切換節點
216‧‧‧切換節點
117‧‧‧切換節點
217‧‧‧切換節點
120‧‧‧驅動器積體電路
121‧‧‧控制場效電晶體
220‧‧‧外部驅動器積體電路
221‧‧‧控制場效電晶體
122‧‧‧控制場效電晶體
222‧‧‧控制場效電晶體
123‧‧‧同步場效電晶體
223‧‧‧同步場效電晶體
124‧‧‧同步場效電晶體
224‧‧‧同步場效電晶體
150‧‧‧輸入電力供應
250‧‧‧輸入電力供應
151‧‧‧輸入電力供應
251‧‧‧輸入電力供應
154‧‧‧接地接點
254‧‧‧接地接點
155‧‧‧接地接點
255‧‧‧接地接點
156‧‧‧輸出電壓接點
256‧‧‧輸出電壓接點
157‧‧‧輸出電壓接點
158‧‧‧接點
257‧‧‧輸出電壓接點
300‧‧‧封裝
301‧‧‧封裝
305‧‧‧引線框架
310‧‧‧控制場效電晶體承座
311‧‧‧控制場效電晶體承座
312‧‧‧控制積體電路承座
313‧‧‧閘極承座
314‧‧‧閘極承座
315‧‧‧同步場效電晶體承座
316‧‧‧切換節點
317‧‧‧切換節點
320‧‧‧外部驅動器積體電路
321‧‧‧控制場效電晶體
322‧‧‧控制場效電晶體
323‧‧‧同步場效電晶體
324‧‧‧同步場效電晶體
330‧‧‧源極/汲極
331‧‧‧源極感測墊
332‧‧‧閘極
333‧‧‧閘極
334‧‧‧源極感測墊
335‧‧‧源極/汲極
336‧‧‧閘極
337‧‧‧源極/汲極
338‧‧‧源極/汲極
339‧‧‧閘極
340‧‧‧扣夾
341‧‧‧扣夾
350‧‧‧供應電壓接點
351‧‧‧供應電壓接點
352‧‧‧閘極接點
353‧‧‧閘極接點
354‧‧‧接地接點
355‧‧‧接地接點
356‧‧‧輸出電壓接點
357‧‧‧輸出電壓接點
358‧‧‧接點
360‧‧‧互連
361‧‧‧互連
362‧‧‧互連
363‧‧‧互連
364‧‧‧互連
365‧‧‧互連
366‧‧‧互連
L1‧‧‧電感
L2‧‧‧電感
C1‧‧‧電容
C2‧‧‧電容
圖1為根據本申請案的一實施之雙電力轉換器封裝的第一半橋式電路和第二半橋式電路之例示圖。
圖2為根據本申請案的另一實施之雙電力轉換器封裝的第一半橋式電路和第二半橋式電路之例示圖。
圖3A為根據本申請案的一實施之雙電力轉換器封裝的例示俯視圖。
圖3B為根據本申請案的一實施之包括第一和第二控制FET、第一和第二同步FET的雙電力轉換器封裝之例示俯視圖。
圖3C為根據本申請案的一實施之包括第一和第二半橋式電路的雙電力轉換器封裝之例示俯視圖。
下面說明包含有關本揭示的實施之特定資訊。本申請案中的圖式及其伴隨的詳細說明係僅針對例示實施。除非特別提及，否則圖式之間相同或對應的元件係可由相同或對應的元件符號來表示。而且，本申請案中的圖式和圖解說明大致上並非按比例的，及並不打算對應於實際相對尺寸。
圖1為根據本申請案的一實施之雙電力轉換器封裝的第一半橋式電路和第二半橋式電路之例示圖。雙電力轉換器封裝100包括引線框架105及可包括經由複數個接點158其中一個或更多個來電連接到引線框架105之外部驅動器IC 120。第一半橋式電路可包括控制(CNTL)FET(場效電晶體)121，其具有電連接到輸入電力供應Vin1 150之其汲極端子以及電連接到同步(SYNC)FET 123的汲極端子之其源極端子，以設置切換節點116。SYNC FET 123的源極係可經由引線框架105的接地接點154連接到地。第一輸出電壓係可從在引線框架105上之輸出電壓接點156中的切換節點116提供。
同樣地，第二半橋式電路可包括CNTL FET 122，其具有電連接到輸入電力供應Vin2 151之其汲極端子以及電連接到SYNC FET 124的汲極端子之其源極端子，以設置切換節點117。SYNC FET 123的源極係可經由引線框架105的接地接點155連接到地。第二輸出電壓係可從在引線框架105上之輸出電壓接點157中的切換節點117提供。此外，外部驅動器IC 120係可位在引線框架105上，及係可組構成控制第一和第二半橋式電路中之CNTL FET和SYNC FET的操作，以除了別的之外還在切換節點116及117中產生想要的輸出電壓。半橋式電路將變成降壓轉換器的一部分，以在外部驅動器IC 120的控制之下分別將輸入電壓Vin1及Vin2轉換成輸出電壓接點156及157中的輸出電壓。
CNTL FET及SYNC FET可以是電力MOSFET(金氧半導體FET)，或電力HEMT(高電子遷移率電晶體)。諸如III-N族HEMT或尤其是GaN HEMT等的III-V族HEMT可被用於CNTL FET及SYNC FET。另一選擇是，諸如III-N族FET或尤其是GaN FET等的III-V族FET可被用於CNTL FET及SYNC FET。
圖2為根據本申請案的另一實施之雙電力轉換器封裝的第一半橋式電路和第二半橋式電路之例示圖。雙電力轉換器封裝200實質上同於圖1的封裝100，除了另包括連接到引線框架的電壓輸出電壓接點之電感/電容負載外。雙電力轉換器封裝200包括引線框架205及可包括經由複數個接點158其中一個或更多個來電連接到引線框架105之外部驅動器IC 220。第一半橋式電路可包括CNTL FET 221，其具有電連接到輸入電力供應Vin1 250之其汲極端子以及電連接到SYNC FET 223的汲極端子之其源極端子，以設置切換節點216。SYNC FET 223的源極係可經由引線框架205的接地接點254連接到地。第一輸出電壓係可從在引線框架205上之輸出電壓接點256中的切換節點216提供。電感L1及電容C1係可串聯電連接在輸出電壓接點256與接地之間，以便在輸出電壓接點256中提供切換輸出的平滑。
同樣地，第二半橋式電路可包括CNTL FET 222，其具有電連接到輸入電力供應Vin2 251之其汲極端子以及電連接到SYNC FET 224的汲極端子之其源極端子，以設置 切換節點217。SYNC FET 223的源極係可經由引線框架205的接地接點255連接到地。第二輸出電壓係可從在引線框架205上之輸出電壓接點257處的切換節點217提供。此外，外部驅動器IC 220係可位在引線框架205外部，及係可組構成控制第一和第二半橋式電路中之CNTL FET和SYNC FET的操作，以除了別的之外還在切換節點216及217中產生想要的輸出電壓。電感L2及電容C2係可串聯電連接在輸出電壓接點257與接地之間，以便在輸出電壓接點257中提供切換輸出的平滑。半橋式電路將變成降壓轉換器的一部分，以在外部驅動器IC 220的控制之下分別將輸入電壓Vin1及Vin2轉換成輸出電壓接點256及257中的輸出電壓。
在圖3A、3B、及3C中另圖示本申請案的例示實施。圖3A為根據本申請案的一實施之雙電力轉換器封裝的例示俯視圖。圖3A中的封裝300包括引線框架305，例如在引線框架305上製造CNTL FET承座310，其被組構成支撐諸如CNTL FET 121或221等CNTL FET的汲極。例如，CNTL FET承座311係組構成支撐諸如CNTL FET 122或222等另一CNTL FET的汲極。引線框架305可額外包括複數個接點358，其被組構成從諸如例如外部控制IC 120或220等外部控制IC來提供用於一或更多個電壓的外部連接，及/或用於CNTL FET及SYNC FET的每一個之一或更多個控制訊號。SYNC FET承座315係組構成分別支撐諸如SYNC FET 123及124或223及224等第一 SYNC FET的至少一源極和第二SYNC FET的至少一源極。CNTL FET承座310及311實質上係對稱製造及配置在引線框架305上。閘極承座313及314係可組構成分別支撐第一和第二SYNC FET的至少一閘極。切換節點316可被組構成透過走線、連接器、扣夾、絲帶、佈線來電連接到第一半橋式電路內的CNTL FET的源極和SYNC FET的汲極。同樣地，切換節點317可被組構成透過走線、連接器、扣夾、絲帶、佈線來電連接到第二半橋式電路內的CNTL FET的源極和SYNC FET的汲極。
圖3B為根據本申請案的一實施之包括第一和第二控制FET、第一和第二同步FET的雙電力轉換器封裝之例示俯視圖。圖3B實質上同於圖3A，但是額外包括下面元件。封裝301可包括CNTL FET 321，其配置在CNTL FET承座310上。圖3B圖示的是源極感測墊331、閘極332、及源極/汲極330在CNTL FET 321的頂側上。汲極係可配置在CNTL FET 321的底側上。
同樣地，CNTL FET 322係可配置在CNTL FET承座311上，及具有源極感測墊334、閘極333、及源極/汲極335在其頂側上，以及汲極在其底側上。SYNC FET 323及324係可各個配置在SYNC FET承座315上。閘極336和源極/汲極337係可配置在SYNC FET 323的底側上，同時閘極336和源極/汲極338係可配置在SYNC FET 324的底側上，如點輪廓所示一般。另外，汲極係可配置在SYNC FET 323及324的每一個之頂側上。閘極墊的每一 個係可組構成位在閘極承座313及314的各自一個上，及源極/汲極墊的每一個係可組構成位在SYNC FET承座315上。最後，外部驅動器IC係可配置在引線框架305外部，及可被組構成遙控CNTL FET的每一個和SYNC FET的每一個。在一實施中，此種外部驅動器IC可被組構成控制一個以上的雙電力轉換器封裝。
圖3C為根據本申請案的一實施之包括第一和第二半橋式電路的雙電力轉換器封裝之例示俯視圖。圖3C實質上同於圖3B，但是額外包括下面元件。
封裝302可包括扣夾340，其配置在CNTL FET 321及SYNC FET 323上，及被組構成電連接CNTL FET 321的源極及SYNC FET 323的汲極到切換節點316。同樣地，扣夾341係可配置在CNTL FET 322及SYNC FET 324上，及被組構成電連接CNTL FET 322的源極及SYNC FET 324的汲極到切換節點317。以此方式，CNTL FET 321及SYNC FET 323形成適於例如使用在降壓轉換器之半橋式電路。同樣地，CNTL FET 322及SYNC FET 324形成適於例如使用在另一降壓轉換器之另一半橋式電路。
切換節點316然後可經由輸出電壓接點356來提供給例如降壓轉換器(未圖示)的電感/電容負載(未圖示)，輸出電壓接點356可被形成作切換節點316的一部分。同樣地，切換節點317然後可經由輸出電壓接點357來提供給例如降壓轉換器(未圖示)的電感/電容負載 (未圖示)，輸出電壓接點357可被形成作切換節點317的一部分。
在本實施中，藉由一或更多個佈線及/或互連，經由電連接到引線框架305上之一或更多個接點358，外部驅動器IC被共享及控制半橋式電路二者。尤其是，互連361可經由一或更多個接點358以從外部驅動器IC提供控制訊號到CNTL FET 321的閘極332，而互連362被用於經由一或更多個接點358來感測CNTL FET 321的源極感測墊331中之電流。因為CNTL FET承座310被組構成支撐CNTL FET 321的汲極，所以Vin1可在供應電壓接點350中被供應到CNTL FET承座310，供應電壓接點350可被形成作CNTL FET承座310的一部分。如此，互連360可經由CNTL FET承座310提供輸入供應電壓Vin1到外部驅動器IC。
同樣地，互連366可經由一或更多個接點358以從外部驅動器IC提供控制訊號到CNTL FET 322的閘極333，而互連365被用於經由一或更多個接點358來感測CNTL FET 322的源極感測墊334中之電流。因為CNTL FET承座311被組構成支撐CNTL FET 322的汲極，所以Vin2可在供應電壓接點351中被供應到CNTL FET承座311，供應電壓接點351可被形成作CNTL FET承座311的一部分。如此，互連364可經由CNTL FET承座311提供輸入供應電壓Vin2到外部驅動器IC 320。因為閘極336及339係分別配置在SYNC FET 323及324的底側上，所以來自 外部驅動器IC的控制訊號可分別直接電連接到閘極接點352及353。在另一選擇中，來自外部驅動器IC的控制訊號可電連接到一或更多個接點358，接著電連接到閘極接點352及353。此外，接地連接可在接地接點354及接地接點355中提供到SYNC FET承座315，接地接點354及接地接點355可被形成作SYNC FET承座315的一部分。
本申請案的上述例示實施藉由框架覆蓋各個包含CNTL FET及SYNC FET之兩半橋式電路在同一封裝中而產生較小的外形因數及封裝整合，使得各個切換節點輸出可被提供到電感/電容負載，以操作兩分開的降壓轉換器。而且，上述實施產生較高的電流密度和電流處理容量。
從上述說明，證明在不違背那些概念的範疇下，各種技術可被用於實施本申請案所說明的那些概念。而且，儘管已特別參考某些實施來說明概念，但是精於本技藝之人士應明白在不違背那些概念的範疇下，可修改形式及細節。如此，所說明的實施在所有著眼點上被考慮作圖解說明而非限制。亦應明白，本申請案並不侷限於上述的特定實施，而是在不違背本揭示的範疇下，可有許多再配置、修改、及取代。
302‧‧‧封裝
305‧‧‧引線框架
310‧‧‧控制場效電晶體承座
311‧‧‧控制場效電晶體承座
315‧‧‧同步場效電晶體承座
316‧‧‧切換節點
317‧‧‧切換節點
321‧‧‧控制場效電晶體
322‧‧‧控制場效電晶體
323‧‧‧同步場效電晶體
324‧‧‧同步場效電晶體
331‧‧‧源極感測墊
332‧‧‧閘極
333‧‧‧閘極
334‧‧‧源極感測墊
340‧‧‧扣夾
341‧‧‧扣夾
350‧‧‧供應電壓接點
351‧‧‧供應電壓接點
352‧‧‧閘極接點
353‧‧‧閘極接點
354‧‧‧接地接點
355‧‧‧接地接點
356‧‧‧輸出電壓接點
357‧‧‧輸出電壓接點
358‧‧‧接點
361‧‧‧互連
362‧‧‧互連
365‧‧‧互連
366‧‧‧互連

Claims (20)

  1. 一種雙電力轉換器封裝，包含：引線框架，包含：第一控制FET(場效電晶體)承座，被組構成支撐第一控制FET的汲極；第二控制FET承座，被組構成支撐第二控制FET的汲極；同步FET承座，被組構成支撐第一同步FET的源極和第二同步FET的源極；第一複數個接點，被組構成從該引線框架外部的驅動器積體電路(IC)接收用於該第一控制FET和該第二控制FET與該第一同步FET和該第二同步FET之控制訊號。
  2. 根據申請專利範圍第1項之封裝，另包含第一切換節點，被組構成透過第一走線、連接器、扣夾、絲帶、或佈線來電連接到該第一控制FET的源極和該第一同步FET的汲極。
  3. 根據申請專利範圍第2項之封裝，另包含第二切換節點，被組構成透過第二走線、連接器、扣夾、絲帶、或佈線來電連接到該第二控制FET的源極和該第二同步FET的汲極。
  4. 根據申請專利範圍第1項之封裝，其中，該第一控制FET承座和該第二控制FET承座實質上對稱地配置在該引線框架上。
  5. 根據申請專利範圍第1項之封裝，其中，該引線框架另包含第一供應電壓接點，被組構成從外部接收第一供應電壓。
  6. 根據申請專利範圍第5項之封裝，其中，該引線框架另包含第二供應電壓接點，被組構成用於從外部接收第二供應電壓。
  7. 根據申請專利範圍第1項之封裝，其中，該引線框架另包含接地接點，用以從外部接收接地連接。
  8. 根據申請專利範圍第3項之封裝，其中，該引線框架另包含第一輸出電壓接點，被組構成從該第一切換節點提供第一輸出電壓。
  9. 根據申請專利範圍第8項之封裝，其中，該引線框架另包含第二輸出電壓接點，被組構成從該第二切換節點提供第二輸出電壓。
  10. 根據申請專利範圍第3項之封裝，另包含第一電感器和第一電容器，係連接在該第一切換節點與接地之間。
  11. 根據申請專利範圍第10項之封裝，另包含第二電感器和第二電容器，係連接在該第二切換節點與接地之間。
  12. 一種雙電力轉換器封裝，包含：引線框架，包含：第一控制FET，係配置在第一控制FET承座上； 第二控制FET，係配置在第二控制FET承座上；第一同步FET和第二同步FET，各個係配置在同步FET承座上；第一複數個接點，被組構成從該引線框架外部的驅動器積體電路(IC)接收用於該第一控制FET和該第二控制FET與該第一同步FET和該第二同步FET之控制訊號。
  13. 根據申請專利範圍第12項之封裝，其中，該引線框架另包含第一切換節點，被組構成透過第一走線、連接器、扣夾、絲帶、或佈線來電連接到該第一控制FET的源極和該第一同步FET的汲極。
  14. 根據申請專利範圍第13項之封裝，其中，該引線框架另包含第二切換節點，被組構成透過第二走線、連接器、扣夾、絲帶、或佈線來電連接到該第二控制FET的源極和該第二同步FET的汲極。
  15. 根據申請專利範圍第12項之封裝，其中：該第一控制FET係經由該第一控制FET承座來連接到第一供應電壓；該第二控制FET係經由該第二控制FET承座來連接到第二供應電壓。
  16. 根據申請專利範圍第12項之封裝，其中，該第一同步FET和該第二同步FET係經由該同步FET承座來連接到地。
  17. 根據申請專利範圍第12項之封裝，其中，該第一控制FET和該第一同步FET形成第一半橋式電路，及該第二控制FET和該第二同步FET形成第二半橋式電路。
  18. 根據申請專利範圍第12項之封裝，其中，該引線框架外部的該驅動器IC被組構成感測經過該第一控制FET的電流及/或經過該第二控制FET的電流。
  19. 根據申請專利範圍第14項之封裝，其中，該引線框架另包含：第一輸出電壓接點，被組構成從該第一切換節點提供第一輸出電壓；第二輸出電壓接點，被組構成從該第二切換節點提供第二輸出電壓。
  20. 根據申請專利範圍第14項之封裝，另包含：第一電感器和第一電容器，係連接在該第一切換節點與接地之間；第二電感器和第二電容器，係連接在該第二切換節點與接地之間。
TW102106561A 2012-03-28 2013-02-25 使用外部驅動器ｉｃ之雙電力轉換器封裝 TWI492353B (zh)

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