TW201400403A - Manufacturing method and structure of trench - Google Patents
Manufacturing method and structure of trench Download PDFInfo
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- TW201400403A TW201400403A TW101121969A TW101121969A TW201400403A TW 201400403 A TW201400403 A TW 201400403A TW 101121969 A TW101121969 A TW 101121969A TW 101121969 A TW101121969 A TW 101121969A TW 201400403 A TW201400403 A TW 201400403A
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Abstract
Description
本發明係有關於一種溝槽製造方法。
The present invention relates to a method of manufacturing a groove.
習知為達到不同產業目的(如機械加工刀具需降低摩擦、醫療植入物需吸附藥物、軸承需增加潤滑、光學元件需控制光線反射率或太陽能電池的陽光吸收率等目的)，會於基材表面以機械加工形成凹坑、溝槽、刻痕，其加工尺寸約為數十至數百微米，由於加工尺寸較大，所以造成在不同產業中，無法達到預期的目的，尤其是在微型零組件上的應用也會受到限制。
In order to achieve different industrial purposes (such as mechanical processing tools need to reduce friction, medical implants need to adsorb drugs, bearings need to increase lubrication, optical components need to control light reflectivity or solar cell's solar absorption rate), etc. The surface of the material is machined to form pits, grooves, and nicks. The processing size is about tens to hundreds of micrometers. Due to the large processing size, it is impossible to achieve the intended purpose in different industries, especially in the micro. Applications on components are also limited.
本發明之主要目的係在於提供一種溝槽製造方法，其包含提供一基材，該基材係具有一表面；形成至少一凹槽於該表面，該凹槽係具有一第一斜面；間隔沈積複數個第一膜層及複數個第二膜層於該第一斜面，以使各該第一膜層及各該第二膜層相互間隔堆疊；研磨該些第一膜層及該些第二膜層，以使各該第一膜層形成有至少一第一顯露面及各該第二膜層形成有至少一第二膜層表面，且該第一顯露面及該第二膜層表面係為相互間隔排列；以及蝕刻各該第二膜層之該第二膜層表面，以使各該第二膜層形成有一溝槽及一第二顯露面，且該溝槽係位於兩相鄰的第一膜層之間。
本發明之另一目的係在於提供一種溝槽結構，其包含一基材、複數個第一膜層及複數個第二膜層，該基材係具有至少一凹槽，該凹槽係具有一第一斜面，該些第一膜層及該些第二膜層係藉由該第一斜面相互間隔堆疊，各該第一膜層具有一第一顯露面及各該第二膜層具有一第二顯露面，各該第二膜層之該第二顯露面係相對低陷於相鄰之各該第一膜層之該第一顯露面以形成有一溝槽。
依據本發明所製造之該溝槽，其尺寸較小於習知技術之溝槽尺寸，並可達到奈米尺寸，在不同產業中藉由形成於不同基材之該溝槽，可符合不同產業中降低摩擦、增加吸附藥物、增加潤滑、控制光線反射率或陽光吸收率之目的。
The main object of the present invention is to provide a method for manufacturing a groove, comprising: providing a substrate having a surface; forming at least one groove on the surface, the groove having a first slope; and spacing deposition a plurality of first film layers and a plurality of second film layers on the first inclined surface, such that each of the first film layers and each of the second film layers are stacked on each other; grinding the first film layers and the second portions a film layer such that each of the first film layers is formed with at least one first exposed surface and each of the second film layers is formed with at least one second film layer surface, and the first exposed surface and the second film layer surface are Arranging at intervals from each other; and etching the surface of the second film layer of each of the second film layers such that each of the second film layers is formed with a groove and a second exposed surface, and the groove is located at two adjacent sides Between the first layers.
Another object of the present invention is to provide a trench structure comprising a substrate, a plurality of first film layers and a plurality of second film layers, the substrate having at least one groove, the groove having a a first inclined surface, the first film layers and the second film layers are stacked by the first inclined surface, each of the first film layers has a first exposed surface and each of the second film layers has a first The second exposed surface of the second film layer is relatively low in the first exposed surface of each of the adjacent first film layers to form a trench.
The groove manufactured according to the present invention has a smaller size than the groove size of the prior art and can reach a nanometer size, and can be conformed to different industries by different grooves formed in different substrates in different industries. Reduce friction, increase adsorption of drugs, increase lubrication, control light reflectance or absorb sunlight.
請參閱第1及2A至2E圖，其係本發明之一較佳實施例，一種溝槽製造方法係包含下列步驟：首先，請參閱第1圖之步驟10及第2A圖，提供一基材110，該基材110係具有一表面111；接著，請參閱第1圖之步驟11及第2B圖，形成至少一凹槽112於該表面111，該凹槽112係具有一第一沈積面及與該第一沈積面相對的一第二沈積面，於本實施例，該第一沈積面係為一第一斜面112a，該第二沈積面係為一第二斜面112b，在本實施例中，各該凹槽112的截面為「V」形；之後，請參閱第1圖之步驟12及第2C圖，間隔沈積複數個第一膜層120及複數個第二膜層130於該第一沈積面及該第二沈積面(即該第一斜面112a及該第二斜面112b)，以使各該第一膜層120及各該第二膜層130相互間隔堆疊，請參閱第2C圖，在本實施例中，先以一第一膜層120覆蓋該第一斜面112a及該第二斜面112b，接著，再以一第二膜層130覆蓋該第一膜層120，之後，再以另一第一膜層120覆蓋該第二膜層130，以此間隔沈積順序使各該第一膜層120及各該第二膜層130相互間隔堆疊。
接著，請參閱第1圖之步驟13及第2D圖，研磨該些第一膜層120及該些第二膜層130，以使各該第一膜層120形成有至少一第一顯露面121及使各該第二膜層130形成有至少一第二膜層表面131，在本實施例中，是藉由該第一斜面112a及第二斜面112b，使該些第一膜層120及該些第二膜層130相互間隔堆疊，因此在研磨該些第一膜層120及該些第二膜層130之後，該些第一膜層120之該第一顯露面121與該些第二膜層130之該第二膜層表面131係為相互間隔排列；最後，請參閱第1圖之步驟14及第2E圖，蝕刻各該第二膜層130之該第二膜層表面131，以使各該第二膜層130形成有一溝槽132及一第二顯露面133，其中各該第二膜層130之該第二顯露面133相對低陷於相鄰之各該第一膜層120之該第一顯露面121，且該溝槽132係位於相鄰之該第一膜層120之間，各該第一膜層120係為功能性膜層，且各該第一膜層120之材質係選自於類鑽碳、氮化鉻、氮化鈦或其混合物，其係可加強抗磨性能，各該第一膜層120之厚度係介於1～10μm之間，各該第二膜層130係為易蝕刻膜層，且各該第二膜層130之材質係選自於鋁、銅或其混合物，各該第二膜層130之厚度係介於0.01～5μm之間，本發明可透過控制該些第一膜層120及該些第二膜層130之厚度，以達到調整該些溝槽132之寬度、間距及密度之功效。
請再參閱第2E圖，該溝槽結構100係至少包含有一基材110、複數個第一膜層120以及複數個第二膜層130，該基材110係具有至少一凹槽112，該凹槽112係具有一第一沈積面及一與該第一沈積面相對之第二沈積面，該些第一膜層120及該些第二膜層130藉由該第一沈積面及該第二沈積面相互間隔堆疊，於本實施例，該第一沈積面係為第一斜面112a，該第二沈積面係為第二斜面112b，該些第一膜層120及該些第二膜層130藉由該第一斜面112a及該第二斜面112b相互間隔堆疊，各該第一膜層120具有一第一顯露面121及各該第二膜層130具有一第二顯露面133，且各該第二膜層130之該第二顯露面133係相對低陷於相鄰之各該第一膜層120之該第一顯露面121以形成有一溝槽132，該溝槽132係位於相鄰之該第一膜層120之間。藉由上述製程使得該溝槽結構100之尺寸可達到奈米，因此在不同產業中可達到降低摩擦、增加吸附藥物、增加潤滑、控制光線反射率或陽光吸收率等目的。
此外，請參閱第3圖，在研磨該些第一膜層120及該些第二膜層130之步驟中，可透過控制該些第一膜層120及該些第二膜層130之研磨深度，來達成該些該溝槽132在該基材110之間隔態樣及分布密度。
請參閱第4A至4C圖，依據不同產業需求，形成不同形狀之凹槽，並藉由本發明之溝槽製造方法，可產生不同形狀之該第一膜層120及溝槽132。或者，請參閱第5圖，在其他應用上，各該凹槽112亦可僅具有該第一沈積面(即第一斜面112a)，該些第一膜層120及該些第二膜層130係相互間隔堆疊於該第一沈積面(即第一斜面112a)。
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。
Please refer to FIGS. 1 and 2A to 2E, which are a preferred embodiment of the present invention. A trench manufacturing method comprises the following steps: First, please refer to step 10 and FIG. 2A of FIG. 1 to provide a substrate. 110, the substrate 110 has a surface 111; then, referring to steps 11 and 2B of FIG. 1, at least one groove 112 is formed on the surface 111, and the groove 112 has a first deposition surface and a second deposition surface opposite to the first deposition surface. In this embodiment, the first deposition surface is a first slope 112a, and the second deposition surface is a second slope 112b. In this embodiment, Each of the grooves 112 has a cross section of a "V" shape. Thereafter, referring to steps 12 and 2C of FIG. 1, a plurality of first film layers 120 and a plurality of second film layers 130 are deposited at intervals. a deposition surface and the second deposition surface (ie, the first slope 112a and the second slope 112b) such that each of the first film layer 120 and each of the second film layers 130 are stacked one on another, as shown in FIG. 2C. In this embodiment, the first inclined surface 112a and the second inclined surface 112b are covered by a first film layer 120, and then a second film layer is further used. 130 covers the first film layer 120, and then covers the second film layer 130 with another first film layer 120. The first film layer 120 and each of the second film layers 130 are mutually separated in this deposition order. Stacked at intervals.
Then, referring to step 13 and FIG. 2D of FIG. 1 , the first film layer 120 and the second film layers 130 are grounded such that each of the first film layers 120 is formed with at least one first exposed surface 121 . And the second film layer 130 is formed with at least one second film layer surface 131. In the embodiment, the first film layer 120 and the second film surface 112 are formed by the first slope surface 112a and the second slope surface 112b. The second film layers 130 are stacked on each other, so after the first film layer 120 and the second film layers 130 are polished, the first exposed surface 121 of the first film layers 120 and the second film are The second film layer surface 131 of the layer 130 is spaced apart from each other; finally, referring to step 14 and FIG. 2E of FIG. 1 , the second film layer surface 131 of each of the second film layers 130 is etched so that Each of the second film layers 130 is formed with a trench 132 and a second exposed surface 133. The second exposed surface 133 of each of the second film layers 130 is relatively low in the adjacent first film layer 120. a first exposed surface 121, and the trench 132 is located between the adjacent first film layers 120, each of the first film layers 120 is a functional film layer, and each of the first film layers 1 The material of 20 is selected from the group consisting of diamond-like carbon, chromium nitride, titanium nitride or a mixture thereof, which can enhance the anti-wear performance, and each of the first film layers 120 has a thickness of between 1 and 10 μm. The second film layer 130 is an easy-etching film layer, and the material of each of the second film layers 130 is selected from aluminum, copper or a mixture thereof, and the thickness of each of the second film layers 130 is between 0.01 and 5 μm. The invention can control the thickness of the first film layer 120 and the second film layers 130 to adjust the width, spacing and density of the trenches 132.
Referring to FIG. 2E , the trench structure 100 includes at least one substrate 110 , a plurality of first film layers 120 , and a plurality of second film layers 130 . The substrate 110 has at least one groove 112 . The groove 112 has a first deposition surface and a second deposition surface opposite to the first deposition surface, and the first film layer 120 and the second film layer 130 are formed by the first deposition surface and the second The first deposition surface is a first slope 112a, and the second deposition surface is a second slope 112b. The first film layer 120 and the second film layer 130 are stacked on the first slope. Each of the first film layer 120 has a first exposed surface 121 and each of the second film layers 130 has a second exposed surface 133, and each of the first inclined surface 112a and the second inclined surface 112b are stacked. The second exposed surface 133 of the second film layer 130 is relatively low in the first exposed surface 121 of each of the adjacent first film layers 120 to form a trench 132, and the trench 132 is located adjacent to the first exposed surface 121. Between the first film layers 120. Through the above process, the size of the trench structure 100 can reach nanometer, so the purpose of reducing friction, increasing adsorption of drugs, increasing lubrication, controlling light reflectance or sunlight absorption rate can be achieved in different industries.
In addition, referring to FIG. 3, in the step of polishing the first film layer 120 and the second film layers 130, the polishing depth of the first film layer 120 and the second film layers 130 can be controlled. The spacing and distribution density of the trenches 132 on the substrate 110 are achieved.
Referring to FIGS. 4A-4C, different shapes of grooves are formed according to different industrial requirements, and the first film layer 120 and the grooves 132 of different shapes can be produced by the groove manufacturing method of the present invention. Alternatively, please refer to FIG. 5 . In other applications, each of the grooves 112 may have only the first deposition surface (ie, the first slope 112 a ), and the first film layer 120 and the second film layer 130 . They are stacked on the first deposition surface (ie, the first slope 112a) at intervals.
The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .
10．．．提供一基材，該基材係具有一表面10. . . Providing a substrate having a surface
11．．．形成至少一凹槽於該表面，該凹槽係具有一第一沈積面11. . . Forming at least one groove on the surface, the groove having a first deposition surface
12．．．間隔沈積複數個第一膜層及複數個第二膜層於該第一沈積面12. . . Depositing a plurality of first film layers and a plurality of second film layers on the first deposition surface
13．．．研磨該些第一膜層及該些第二膜層13. . . Grinding the first film layer and the second film layer
14．．．蝕刻各該第二膜層14. . . Etching each of the second layers
100．．．溝槽結構100. . . Groove structure
110．．．基材110. . . Substrate
111．．．表面111. . . surface
112．．．凹槽112. . . Groove
112a．．．第一斜面112a. . . First slope
112b．．．第二斜面112b. . . Second slope
120．．．第一膜層120. . . First film
121．．．第一顯露面121. . . First appearance
130．．．第二膜層130. . . Second film
131．．．第二膜層表面131. . . Second film surface
132．．．溝槽132. . . Trench
133．．．第二顯露面133. . . Second appearance
第1圖：依據本發明之一實施例，一種溝槽製造方法之流程圖。
第2A至2E圖：依據本發明之一實施例，該溝槽製造方法之截面示意圖。
第3圖：依據本發明之一實施例，分布密度不同之溝槽示意圖。
第4A至4C圖：依據本發明之一實施例，不同形狀之溝槽示意圖。
第5圖：依據本發明之另一實施例，另一種溝槽結構之截面示意圖。
Figure 1 is a flow chart showing a method of manufacturing a groove in accordance with an embodiment of the present invention.
2A to 2E are schematic cross-sectional views showing the method of manufacturing the groove in accordance with an embodiment of the present invention.
Figure 3 is a schematic view of a trench having different distribution densities in accordance with an embodiment of the present invention.
4A-4C are schematic views of trenches of different shapes in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view showing another trench structure in accordance with another embodiment of the present invention.
100．．．溝槽結構100. . . Groove structure
110．．．基材110. . . Substrate
112．．．凹槽112. . . Groove
112a．．．第一斜面112a. . . First slope
112b．．．第二斜面112b. . . Second slope
120．．．第一膜層120. . . First film
121．．．第一顯露面121. . . First appearance
130．．．第二膜層130. . . Second film
132．．．溝槽132. . . Trench
133．．．第二顯露面133. . . Second appearance
Claims (14)
提供一基材，該基材係具有一表面；
形成至少一凹槽於該表面，該凹槽係具有一第一斜面；
間隔沈積複數個第一膜層及複數個第二膜層於該第一斜面，使各該第一膜層及各該第二膜層相互間隔堆疊；
研磨該些第一膜層及該些第二膜層，以使各該第一膜層形成有至少一第一顯露面及使各該第二膜層形成有至少一第二膜層表面，且該些第一顯露面及該些第二膜層表面係為相互間隔排列；以及
蝕刻各該第二膜層之該第二膜層表面，以使各該第二膜層形成有一溝槽及一第二顯露面，且該溝槽係位於相鄰之兩第一膜層之間。A trench manufacturing method comprising at least:
Providing a substrate having a surface;
Forming at least one groove on the surface, the groove having a first slope;
And depositing a plurality of first film layers and a plurality of second film layers on the first inclined surface, such that each of the first film layers and each of the second film layers are stacked on each other;
Polishing the first film layer and the second film layers such that each of the first film layers is formed with at least one first exposed surface and each of the second film layers is formed with at least one second film layer surface, and The first exposed surface and the surface of the second film layer are arranged at intervals; and the surface of the second film layer of each of the second film layers is etched such that each of the second film layers is formed with a groove and a The second revealing surface, and the trench is located between the adjacent two first film layers.
一基材，其係具有至少一凹槽，該凹槽係具有一第一斜面；以及
複數個第一膜層及複數個第二膜層藉由該第一斜面相互間隔堆疊，各該第一膜層具有一第一顯露面及各該第二膜層具有一第二顯露面，各該第二膜層之該第二顯露面係相對低陷於相鄰之各該第一膜層之該第一顯露面以形成有一溝槽。A trench structure comprising at least:
a substrate having at least one groove, the groove having a first slope; and a plurality of first film layers and a plurality of second film layers stacked by the first slopes, each of the first The film layer has a first exposed surface and each of the second film layers has a second exposed surface, and the second exposed surface of each of the second film layers is relatively low in the first of the adjacent first film layers. A face is exposed to form a groove.
提供一基材，該基材係具有一凹槽，該凹槽係具有一第一沈積面；
間隔沈積複數個第一膜層及複數個第二膜層於該第一沈積面，使各該第一膜層及各該第二膜層相互間隔堆疊；
研磨該些第一膜層及該些第二膜層，以使各該第一膜層形成有一第一顯露面及使各該第二膜層形成有一第二膜層表面，且該些第一顯露面及該些第二膜層表面係為相互間隔排列；以及
蝕刻各該第二膜層之該第二膜層表面，以使各該第二膜層形成有一第二顯露面，各該第二顯露面係相對低陷於相鄰之該些第一顯露面，以形成一溝槽。A trench manufacturing method comprising at least:
Providing a substrate having a groove having a first deposition surface;
Depositing a plurality of first film layers and a plurality of second film layers on the first deposition surface, such that each of the first film layers and each of the second film layers are stacked on each other;
Grinding the first film layer and the second film layers such that each of the first film layers forms a first exposed surface and each of the second film layers forms a second film layer surface, and the first The exposed surface and the surface of the second film layer are arranged at intervals; and the surface of the second film layer of each of the second film layers is etched such that each of the second film layers forms a second exposed surface, each of the first The two exposed faces are relatively low in the adjacent first exposed faces to form a groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101121969A TWI472479B (en) | 2012-06-19 | 2012-06-19 | Manufacturing method and structure of trench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101121969A TWI472479B (en) | 2012-06-19 | 2012-06-19 | Manufacturing method and structure of trench |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201400403A true TW201400403A (en) | 2014-01-01 |
| TWI472479B TWI472479B (en) | 2015-02-11 |
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| TW101121969A TWI472479B (en) | 2012-06-19 | 2012-06-19 | Manufacturing method and structure of trench |
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| TW (1) | TWI472479B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101330956B1 (en) * | 2009-08-19 | 2013-11-18 | 히타치가세이가부시끼가이샤 | Polishing solution for cmp and polishing method |
| TWM419215U (en) * | 2011-06-03 | 2011-12-21 | Epistar Corp | Multi-layered structure |
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