TW201345154A - Input/output circuit - Google Patents

Input/output circuit Download PDF

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TW201345154A
TW201345154A TW101113520A TW101113520A TW201345154A TW 201345154 A TW201345154 A TW 201345154A TW 101113520 A TW101113520 A TW 101113520A TW 101113520 A TW101113520 A TW 101113520A TW 201345154 A TW201345154 A TW 201345154A
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signal
gate
transistor
input
coupled
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TW101113520A
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TWI466445B (en
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Chao-Yen Huang
Jung-Tsun Chuang
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Global Unichip Corp
Taiwan Semiconductor Mfg
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Abstract

Input/output circuit including a gating circuit, a transmission circuit and a first switch. The gating circuit has a first gating terminal, a second gating terminal and a gating control terminal, and selectively conducts between the first gating terminal and the second gating terminal according to signal at the gating control terminal; signal at the first gating terminal is in associated with an input signal and an enable signal. The transmission circuit has a first signal terminal and an output terminal respectively coupled to the second gating terminal and a pad. The first switch has a first coupling terminal and a second coupling terminal respectively coupled to an internal terminal and the gating control terminal, and selectively conducts between the first coupling terminal and the second coupling terminal according to the enable signal. The internal terminal is coupled to the pad.

Description

輸出入電路Output circuit

本發明是有關於一種輸出入電路,且特別是有關於一種可在傳送、接收切換後增進響應速度的輸出入電路。The present invention relates to an input-output circuit, and more particularly to an input-output circuit that can improve response speed after transmission and reception switching.

以積體電路/晶片為基礎的各種電子裝置是現代資訊社會最重要的硬體基礎。電子裝置由不同晶片組合而成;為了整合不同晶片的功能,各晶片內會設有輸出入電路,以和其他晶片交換資料與訊號。Various electronic devices based on integrated circuits/wafers are the most important hardware foundation of the modern information society. The electronic device is composed of different wafers; in order to integrate the functions of different wafers, an input and output circuit is arranged in each wafer to exchange data and signals with other wafers.

在一種通訊應用中,不同晶片的輸出入電路會利用同一線路進行資料的往來交換。請參考第1圖,其所繪示的即是兩輸出入電路100與102在此種應用中進行資料往來的示意圖。輸出入電路100中設有傳輸模組TX1與接收模組RX1,經由接墊PAD1耦接於一走線12(例如說是一電路板上的佈線);輸出入電路102則設有傳輸模組TX2與接收模組RX2,經由接墊PAD2耦接於走線12。傳輸模組TX1受控於一致能訊號OEN1;當致能訊號OEN1為邏輯0時,傳輸模組TX1被致能,以依據訊號I1驅動接墊PAD1的訊號。當致能訊號OEN1為邏輯1時,傳輸模組TX1失能,不再主控接墊PAD1的訊號,以將接墊PAD1維持於可被驅動的狀態;而接收模組RX1就可將接墊PAD1的訊號接收為訊號C1。同理,傳輸模組TX2受控於致能訊號OEN2。In a communication application, the input and output circuits of different chips use the same line to exchange data. Please refer to FIG. 1 , which is a schematic diagram of data input between two input and output circuits 100 and 102 in such an application. The input and output circuit 100 is provided with a transmission module TX1 and a receiving module RX1, and is coupled to a trace 12 (for example, a wiring on a circuit board) via a pad PAD1; and a transmission module is provided in the input/output circuit 102. The TX2 and the receiving module RX2 are coupled to the trace 12 via the pad PAD2. The transmission module TX1 is controlled by the uniform energy signal OEN1; when the enable signal OEN1 is logic 0, the transmission module TX1 is enabled to drive the signal of the pad PAD1 according to the signal I1. When the enable signal OEN1 is logic 1, the transmission module TX1 is disabled, and the signal of the pad PAD1 is no longer controlled to maintain the pad PAD1 in a driveable state; and the receiving module RX1 can be used as a pad. The signal of PAD1 is received as signal C1. Similarly, the transmission module TX2 is controlled by the enable signal OEN2.

輸出入電路100與102可分別設置於兩不同的晶片。當輸出入電路100要傳送資料至輸出入電路102時,致能訊號OEN1與OEN2分別為邏輯0與邏輯1;在輸出入電路100中,傳輸模組TX1致能,依據訊號I1驅動接墊PAD1的訊號,並經由走線12驅動接墊PAD2的訊號。在輸出入電路102中,傳輸模組TX2失能,使接墊PAD2的訊號能被傳輸模組TX1驅動;而接收模組RX2則將接墊PAD2的訊號接收為訊號C2。換言之,輸出入電路100與102可分別作為傳送端與接收端;訊號I1中的資料可經由傳輸模組TX1與接墊PAD1發出,經由接墊PAD2與接收模組RX2而被接收至訊號C2。The input and output circuits 100 and 102 can be respectively disposed on two different wafers. When the input-output circuit 100 is to transmit data to the input-output circuit 102, the enable signals OEN1 and OEN2 are logic 0 and logic 1, respectively; in the input-output circuit 100, the transmission module TX1 is enabled, and the driver pad PAD1 is driven according to the signal I1. The signal is driven by the trace 12 to drive the signal of the pad PAD2. In the input-output circuit 102, the transmission module TX2 is disabled, so that the signal of the pad PAD2 can be driven by the transmission module TX1; and the receiving module RX2 receives the signal of the pad PAD2 as the signal C2. In other words, the input and output circuits 100 and 102 can be respectively used as the transmitting end and the receiving end; the data in the signal I1 can be sent through the transmission module TX1 and the pad PAD1, and received to the signal C2 via the pad PAD2 and the receiving module RX2.

相對地,輸出入電路100與102的功能可交換,分別作為接收端與傳送端。當輸出入電路102要傳送資料至輸出入電路100時,致能訊號OEN1與OEN2分別為邏輯1與邏輯0;在輸出入電路102中,傳輸模組TX2致能,依據訊號I2驅動接墊PAD2的訊號,並經由走線12驅動接墊PAD1的訊號。在此同時,輸出入電路100中的傳輸模組TX1失能,使接墊PAD1的訊號能被傳輸模組TX2驅動;而接收模組RX1則將接墊PAD1的訊號接收為訊號C1。In contrast, the functions of the input and output circuits 100 and 102 can be exchanged as the receiving end and the transmitting end, respectively. When the input-output circuit 102 is to transmit data to the input-output circuit 100, the enable signals OEN1 and OEN2 are respectively logic 1 and logic 0; in the input-output circuit 102, the transmission module TX2 is enabled, and the driver pad PAD2 is driven according to the signal I2. The signal is driven by the trace 12 to drive the signal of the pad PAD1. At the same time, the transmission module TX1 in the input/output circuit 100 is disabled, so that the signal of the pad PAD1 can be driven by the transmission module TX2, and the receiving module RX1 receives the signal of the pad PAD1 as the signal C1.

請參考第2圖,其所示意的是一習知輸出入電路10;舉例而言,輸出入電路10可實現第1圖中的輸出入電路100,在訊號OEN1為邏輯0時依據訊號I1驅動接墊PAD1,並在訊號OEN1為邏輯1時將接墊PAD1的訊號接收為訊號C1。輸出入電路10運作於工作電壓VD33與Vss之間,設有電晶體Tp0至Tp9(例如p通道金氧半場效電晶體)、Tn0至Tn7(例如n通道金氧半場效電晶體)、Dp1至Dp3(例如p通道金氧半場效電晶體)、Dn1至Dn3(例如n通道金氧半場效電晶體),電阻R0、反及閘ND0、反或閘NR0以及反相器Iva與Ivb。電晶體Tp0至Tp9、Tn0至Tn7耦接於節點a0至a9之間。Please refer to FIG. 2, which shows a conventional input-output circuit 10. For example, the input-output circuit 10 can implement the input-output circuit 100 in FIG. 1, and is driven according to the signal I1 when the signal OEN1 is logic 0. The pad PAD1 is connected, and the signal of the pad PAD1 is received as the signal C1 when the signal OEN1 is logic 1. The input-output circuit 10 operates between the operating voltages VD33 and Vss, and is provided with transistors Tp0 to Tp9 (for example, p-channel MOS field-effect transistors), Tn0 to Tn7 (for example, n-channel MOS field-effect transistors), and Dp1 to Dp3 (for example, p-channel MOS field-effect transistor), Dn1 to Dn3 (for example, n-channel MOSFET), resistor R0, NAND gate ND0, inverse gate NR0, and inverters Iva and Ivb. The transistors Tp0 to Tp9 and Tn0 to Tn7 are coupled between the nodes a0 to a9.

在輸出入電路10中,當訊號OEN1為邏輯0時,節點a8與節點a6的訊號均為訊號I1的反相訊號;節點a6與節點a8的訊號會分別傳輸至電晶體Tp1與Tn1的閘極,而電晶體Tp1與Tn1就可據此而在節點a0與接墊PAD1上驅動訊號。舉例而言,當訊號I1為邏輯0,電晶體Tp1不導通,但電晶體Tn1導通,將節點a0的電壓拉低至工作電壓Vss,如此便可在接墊PAD1上驅動邏輯0的訊號。相對地,當訊號I1為邏輯1,電晶體Tn1不導通,改由電晶體Tp1導通,將節點a0的訊號拉高至工作電壓VD33,如此便可在接墊PAD1上驅動邏輯1的訊號。In the input-output circuit 10, when the signal OEN1 is logic 0, the signals of the node a8 and the node a6 are the inverted signals of the signal I1; the signals of the node a6 and the node a8 are respectively transmitted to the gates of the transistors Tp1 and Tn1. The transistors Tp1 and Tn1 can drive signals on the node a0 and the pad PAD1 accordingly. For example, when the signal I1 is logic 0, the transistor Tp1 is not turned on, but the transistor Tn1 is turned on, and the voltage of the node a0 is pulled down to the operating voltage Vss, so that the signal of the logic 0 can be driven on the pad PAD1. In contrast, when the signal I1 is logic 1, the transistor Tn1 is not turned on, and the transistor Tp1 is turned on, and the signal of the node a0 is pulled up to the operating voltage VD33, so that the signal of the logic 1 can be driven on the pad PAD1.

當訊號OEN1為邏輯1時,節點a8的訊號為邏輯0,節點a6的訊號為邏輯1,分別使電晶體Tp1與Tn1關閉不導通,不再主導節點a0的訊號;如此,接墊PAD1的訊號就可被其他電路(如輸出入電路102)所驅動。接墊PAD1的訊號會經由節點a0、a1傳輸至節點a2,以經由電晶體Tp0與Tn0、電晶體Dp1與Dn1、電晶體Dp2與Dn2以及電晶體Dp3與Dn3這四對互補電晶體所形成的四個反相器而被接收為訊號C。When the signal OEN1 is logic 1, the signal of the node a8 is logic 0, and the signal of the node a6 is logic 1, respectively, so that the transistors Tp1 and Tn1 are turned off and do not conduct, and the signal of the node a0 is no longer dominant; thus, the signal of the pad PAD1 It can be driven by other circuits such as the input and output circuit 102. The signal of the pad PAD1 is transmitted to the node a2 via the nodes a0, a1 to form via the four pairs of complementary transistors of the transistors Tp0 and Tn0, the transistors Dp1 and Dn1, the transistors Dp2 and Dn2, and the transistors Dp3 and Dn3. Four inverters are received as signal C.

在某些應用中,當訊號OEN1為邏輯1而使接墊PAD1被驅動時,接墊PAD1的訊號電壓會超過輸出入電路10的工作電壓VD33。舉例而言,工作電壓VD33可以等於3.3伏(volt),但接墊PAD1的電壓可以達到5伏。當接墊PAD1的電壓高於工作電壓VD33時,此高接墊電壓會對輸出入電路10的電晶體(如電晶體Tp0至Tp9)造成有害的電性壓力(stress),也會在電晶體Tp1的汲極與源極間導通,形成由接墊PAD1至工作電壓VD33的漏電。為了減抑高接墊電壓所導致的負面效應,電晶體Tp0至Tp9的體極(即n型井的井極)均耦接於同一節點w。In some applications, when the signal OEN1 is logic 1 and the pad PAD1 is driven, the signal voltage of the pad PAD1 may exceed the operating voltage VD33 of the input-output circuit 10. For example, the operating voltage VD33 can be equal to 3.3 volts, but the voltage of the pad PAD1 can reach 5 volts. When the voltage of the pad PAD1 is higher than the operating voltage VD33, the high pad voltage may cause harmful electrical stress on the transistors input into the circuit 10 (such as the transistors Tp0 to Tp9), and also in the transistor. The drain of the Tp1 is electrically connected to the source, and the leakage from the pad PAD1 to the operating voltage VD33 is formed. In order to reduce the negative effects caused by the high pad voltage, the body poles of the transistors Tp0 to Tp9 (ie, the well poles of the n-type well) are coupled to the same node w.

當訊號OEN1為邏輯1時,若接墊PAD1接收的訊號電壓未高於工作電壓VD33,電晶體Tp8與Tn5不導通,電晶體Tp7導通而將節點w耦接至工作電壓VD33,使節點w的電壓等於工作電壓VD33。由於接墊PAD1的電壓未高於工作電壓VD33,將節點w的電壓維持於工作電壓VD33即可確保電晶體Tp1會完全關閉,且其閘極、體極、源極與汲極間的電壓差可維持在電晶體耐受範圍內。When the signal OEN1 is logic 1, if the signal voltage received by the pad PAD1 is not higher than the working voltage VD33, the transistors Tp8 and Tn5 are not turned on, and the transistor Tp7 is turned on to couple the node w to the working voltage VD33, so that the node w The voltage is equal to the operating voltage VD33. Since the voltage of the pad PAD1 is not higher than the operating voltage VD33, maintaining the voltage of the node w at the operating voltage VD33 ensures that the transistor Tp1 is completely turned off, and the voltage difference between the gate, the body, the source and the drain It can be maintained within the tolerance range of the transistor.

相對地,當訊號OEN1為邏輯1但接墊PAD1接收的訊號電壓高於工作電壓VD33時,電晶體Tp8導通而使電晶體Tp7關閉,故節點w的電壓不再受控於工作電壓VD33。節點w的電壓會浮動(floating),隨接墊PAD1的電壓上升而超過工作電壓VD33;電晶體Tp2亦會使節點a7的電壓追隨接墊PAD1的電壓而超過工作電壓VD33。如此,電晶體Tp1便可完全關閉不漏電,且其閘極、體極、源極與汲極間的相互電壓差仍可維持在電晶體耐受範圍內。高接墊電壓亦會由節點a0、a1而傳輸至節點a4,以使電晶體Tp3完全關閉,保護反及閘ND0;同時,電晶體Tp5也可被完全關閉。In contrast, when the signal OEN1 is logic 1 but the signal voltage received by the pad PAD1 is higher than the operating voltage VD33, the transistor Tp8 is turned on to turn off the transistor Tp7, so the voltage of the node w is no longer controlled by the operating voltage VD33. The voltage of the node w will float, and the voltage of the pad PAD1 will rise beyond the operating voltage VD33; the transistor Tp2 will also cause the voltage of the node a7 to follow the voltage of the pad PAD1 and exceed the operating voltage VD33. In this way, the transistor Tp1 can be completely turned off without leakage, and the mutual voltage difference between the gate, the body, the source and the drain can be maintained within the tolerance range of the transistor. The high pad voltage is also transmitted from the node a0, a1 to the node a4, so that the transistor Tp3 is completely turned off, and the gate ND0 is protected. At the same time, the transistor Tp5 can be completely turned off.

換言之,習知輸出入電路10中的電晶體Tn6、Tp6、Tp4與Tp5可在高接墊電壓時發揮保護的功能。不過,當訊號OEN1由邏輯0轉變為邏輯1後,習知輸出入電路10將無法快速地由訊號傳送切換為訊號接收。請參考第3圖,其所示意的即是習知輸出入電路10在傳送與接收間切換時各相關訊號的波形時序。輸出入電路10可作為第1圖中的輸出入電路100,以和輸出入電路102相互搭配而交換資料。在時點t0至t1之間,訊號OEN1為邏輯0,輸出入電路10將接墊PAD1驅動至邏輯1(例如工作電壓VD33),以將邏輯1傳送至接墊PAD2。In other words, the transistors Tn6, Tp6, Tp4, and Tp5 in the conventional input/output circuit 10 can function as a protection at a high pad voltage. However, when the signal OEN1 is changed from logic 0 to logic 1, the conventional input/output circuit 10 cannot be quickly switched from signal transmission to signal reception. Please refer to FIG. 3, which is a waveform sequence of the relevant signals when the conventional input/output circuit 10 switches between transmission and reception. The input/output circuit 10 can be used as the input/output circuit 100 in FIG. 1 to exchange data with the input/output circuit 102. Between time t0 and t1, signal OEN1 is logic 0, and input/output circuit 10 drives pad PAD1 to logic 1 (eg, operating voltage VD33) to transfer logic 1 to pad PAD2.

在時點t1之後,訊號OEN1為邏輯1,訊號OEN2為邏輯0,改由輸出入電路102將接墊PAD2驅動至邏輯0(例如工作電壓Vss),而輸出入電路10的接墊PAD1應該要能在時點t1之後被快速驅動至邏輯0,以順利接收輸出入電路102傳出的訊號。不過,就如第3圖所示,接墊PAD1的電壓無法在時點t1之後快速地由邏輯1轉變至邏輯0,要延遲至時點t2才能轉變至邏輯0。顯然,此一延遲已經影響資料交換的響應速度與效率;而此延遲係導因於習知輸出入電路10的電路架構。After the time point t1, the signal OEN1 is logic 1, the signal OEN2 is logic 0, and the input and output circuit 102 drives the pad PAD2 to logic 0 (for example, the operating voltage Vss), and the pad PAD1 of the input/output circuit 10 should be able to After the time point t1, it is quickly driven to a logic 0 to smoothly receive the signal transmitted from the input/output circuit 102. However, as shown in FIG. 3, the voltage of the pad PAD1 cannot be quickly changed from logic 1 to logic 0 after time t1, and is delayed until time t2 to transition to logic 0. Obviously, this delay has affected the response speed and efficiency of the data exchange; this delay is due to the circuit structure of the conventional input and output circuit 10.

在時點t1之前,當習知輸出入電路10傳輸邏輯1時,因訊號OEN1為邏輯0,電晶體Tn5導通,節點a5的電壓為工作電壓Vss,而節點a6也是以工作電壓Vss使電晶體Tp1導通。在時點t1之後,當訊號OEN1轉變至邏輯1,節點a6的電壓應該要上升至工作電壓VD33,以將電晶體Tp1完全關閉,使電晶體Tp1不再控制節點a0的電壓。不過,在時點t1之後,節點a5的電壓會經由電晶體Tp4與Tp5而影響節點a6的電壓;要等節點a5的電壓亦上升至工作電壓VD33,節點a6的電壓才能完全關閉電晶體Tp1。在電晶體Tp1關閉前,由於導通的電晶體Tp1傾向將節點a0的電壓拉高至工作電壓VD33,故節點a0的電壓會因為電晶體Tp1的競爭而難以下降至工作電壓Vss的邏輯0。然而,由於節點a5的電壓要經由電晶體Tp7的源極、汲極間電荷分享(charge sharing)才能緩慢地由工作電壓Vss上升至工作電壓VD33,故習知輸出入電路10要延遲至時點t2才能使接墊PAD1被驅動至邏輯0,不能在時點t1之後快速順利地由接墊PAD1接收邏輯0。Before time t1, when the conventional output-in circuit 10 transmits logic 1, the signal OEN1 is logic 0, the transistor Tn5 is turned on, the voltage of the node a5 is the operating voltage Vss, and the node a6 also makes the transistor Tp1 with the operating voltage Vss. Turn on. After the time point t1, when the signal OEN1 transitions to logic 1, the voltage of the node a6 should rise to the operating voltage VD33 to completely turn off the transistor Tp1, so that the transistor Tp1 no longer controls the voltage of the node a0. However, after the time point t1, the voltage of the node a5 affects the voltage of the node a6 via the transistors Tp4 and Tp5; if the voltage of the node a5 also rises to the operating voltage VD33, the voltage of the node a6 can completely turn off the transistor Tp1. Before the transistor Tp1 is turned off, since the turned-on transistor Tp1 tends to pull the voltage of the node a0 to the operating voltage VD33, the voltage of the node a0 is difficult to fall to the logic 0 of the operating voltage Vss due to the competition of the transistor Tp1. However, since the voltage of the node a5 is to be slowly increased from the operating voltage Vss to the operating voltage VD33 via the source and drain sharing of the transistor Tp7, the conventional input-output circuit 10 is delayed until the time point t2. In order to enable the pad PAD1 to be driven to logic 0, the logic 0 cannot be received quickly and smoothly by the pad PAD1 after the time point t1.

為了克服習知技術的缺點,本發明提供一種具有較佳電路架構的輸出入電路,以在傳送、接收交替後快速響應資料的接收。In order to overcome the shortcomings of the prior art, the present invention provides an input-output circuit having a preferred circuit architecture to quickly respond to the reception of data after transmission and reception alternation.

本發明的目的是提供一種輸出入電路,包括一閘通電路、一傳輸電路、一第一開關、一第二開關、一偏壓電路與一接收電路。閘通電路具有一第一閘通端、一第二閘通端與一閘通控制端,依據閘通控制端的訊號選擇性地在第一閘通端與第二閘通端間導通;第一閘通端的訊號係關聯於一輸入訊號與一致能訊號。傳輸電路具有一第一訊號端、一第二訊號端與一輸出端,第一訊號端與輸出端分別耦接第二閘通端與一接墊;傳輸電路使輸出端的訊號關聯於第一訊號端的訊號與第二訊號端的訊號。第一開關具有一第一耦接端與一第二耦接端,分別耦接一內部端與閘通控制端,並依據致能訊號選擇性地在第一耦接端與第二耦接端間導通;內部端係耦接於接墊。第二開關耦接於第二耦接端與一第二工作電壓之間,依據致能訊號選擇性地將第二耦接端導通至第二工作電壓。偏壓電路耦接於第二耦接端、內部端與一井極端之間,使井極端的訊號關聯於內部端與第二耦接端的訊號。接收電路耦接於第一耦接端,依據第一耦接端的訊號提供一接收訊號。It is an object of the present invention to provide an input-output circuit comprising a gate circuit, a transmission circuit, a first switch, a second switch, a bias circuit and a receiving circuit. The gate pass circuit has a first gate end, a second gate end and a gate control end, and is selectively conductive between the first gate end and the second gate end according to the signal of the gate control terminal; The signal at the gate is associated with an input signal and a consistent signal. The transmission circuit has a first signal end, a second signal end and an output end, the first signal end and the output end are respectively coupled to the second gate end and a pad; the transmission circuit causes the signal of the output end to be associated with the first signal The signal of the terminal and the signal of the second signal end. The first switch has a first coupling end and a second coupling end, respectively coupled to an internal end and a gate control end, and selectively at the first coupling end and the second coupling end according to the enabling signal The inner end is coupled to the pad. The second switch is coupled between the second coupling end and a second operating voltage, and selectively turns the second coupling end to the second operating voltage according to the enabling signal. The bias circuit is coupled between the second coupling end, the inner end and a well terminal, and the signal of the well end is associated with the signal of the inner end and the second coupling end. The receiving circuit is coupled to the first coupling end, and provides a receiving signal according to the signal of the first coupling end.

一實施例中,第一開關內包括一第一電晶體與一第二電晶體。第一電晶體具有一第一閘極與兩個第一通道端,分別耦接致能訊號、第一耦接端與第二耦接端。第二電晶體具有一第二閘極與兩個第二通道端,分別耦接致能訊號的反相訊號、第一耦接端與第二耦接端。第一電晶體與第二電晶體係一對互補(complementary)電晶體。In one embodiment, the first switch includes a first transistor and a second transistor. The first transistor has a first gate and two first channel ends, respectively coupled to the enable signal, the first coupling end and the second coupling end. The second transistor has a second gate and two second terminals, respectively coupled to the inversion signal of the enable signal, the first coupling end and the second coupling end. The first transistor and the second transistor system are a pair of complementary transistors.

一實施例中,第二開關中包括一第三電晶體與一第四電晶體。第三電晶體具有一第三閘極與兩個第三通道端;該第三閘極耦接第一工作電壓。第四電晶體具有一第四閘極與兩個第四通道端;第四閘極耦接致能訊號的反相訊號。第三通道端的兩者其中之一耦接於第二耦接端,兩第三通道端的另一個則耦接兩第四通道端的其中之一,且兩第四通道端的另一個耦接於第二工作電壓。In one embodiment, the second switch includes a third transistor and a fourth transistor. The third transistor has a third gate and two third channel ends; the third gate is coupled to the first operating voltage. The fourth transistor has a fourth gate and two fourth channel ends; the fourth gate is coupled to the inversion signal of the enable signal. One of the third channel ends is coupled to the second coupling end, the other of the two third channel ends is coupled to one of the two fourth channel ends, and the other of the two fourth channel ends is coupled to the second Operating Voltage.

一實施例中,傳輸電路包括一第一驅動電晶體,具有一第一閘極、兩第一通道端與一第一體極(bulk),分別耦接第一訊號端、第一工作電壓、輸出端與井極端。In one embodiment, the transmission circuit includes a first driving transistor having a first gate, two first channel ends, and a first bulk, respectively coupled to the first signal terminal, the first operating voltage, The output is at the end of the well.

為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下:In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:

請參考第4圖,其所示意的是依據本發明一實施例的輸出入電路20。舉例而言,輸出入電路20可用以實現第1圖中的輸出入電路100;輸出入電路20中的接墊PAD以及訊號OEN、I與C可分別作為輸出入電路100中的接墊PAD1以及訊號OEN1、I1與C1。當訊號OEN(致能訊號)為邏輯0時,輸出入電路20依據訊號I(可視為一輸入訊號)驅動接墊PAD的訊號;當訊號OEN為邏輯1時,輸出入電路使接墊PAD可被其他電路(如另一晶片的輸出入電路)驅動,並將接墊PAD的訊號接收為訊號C(即一接收訊號)。Referring to Figure 4, illustrated is an output-in circuit 20 in accordance with an embodiment of the present invention. For example, the input-output circuit 20 can be used to implement the input-output circuit 100 in FIG. 1; the pads PAD and the signals OEN, I, and C in the input-output circuit 20 can be used as the pads PAD1 in the input-output circuit 100, respectively. Signals OEN1, I1 and C1. When the signal OEN (enable signal) is logic 0, the input/output circuit 20 drives the signal of the pad PAD according to the signal I (which can be regarded as an input signal); when the signal OEN is logic 1, the input and output circuit enables the pad PAD to be It is driven by other circuits (such as the input and output circuits of another chip) and receives the signal of the pad PAD as the signal C (ie, a received signal).

如第4圖所示,輸出入電路20運作於工作電壓VD33(如3.3伏)與Vss(如0伏)之間,搭配一傳輸前側電路22與一接收前側電路36,並設有一閘通電路24、一傳輸電路26、開關30與32(分別為第一開關與第二開關)、一偏壓電路28與一接收電路34,並包括電晶體P2、N7與一電阻R。As shown in FIG. 4, the input/output circuit 20 operates between an operating voltage VD33 (e.g., 3.3 volts) and Vss (e.g., 0 volts), and is coupled with a transmission front side circuit 22 and a reception front side circuit 36, and is provided with a gate circuit. 24. A transmission circuit 26, switches 30 and 32 (first and second switches, respectively), a bias circuit 28 and a receiving circuit 34, and includes transistors P2, N7 and a resistor R.

傳輸前側電路22中設有反相器Iv1、Iv2、一反及閘ND與一反或閘NR。訊號OEN耦接於節點e9,反相器Iv1耦接於節點e9與反及閘ND之間,將訊號OEN反相。反及閘ND則對訊號I與訊號OEN的反相訊號作反及運算,並將運算結果提供至節點e6。反相器Iv2將訊號OEN反相為訊號OENb,並將訊號OENb提供至節點e8。反或閘NR對訊號I與訊號OEN作反或運算,將運算結果輸出至節點e5。在傳輸前側電路22的運作下,節點e6與e5的訊號皆關聯於訊號I與訊號OEN;當訊號OEN為邏輯0時,節點e5與e6的訊號皆等於訊號I的反相訊號。當訊號OEN為邏輯1時,節點e5維持於工作電壓Vss,節點e6則為工作電壓VD33。The transmission front side circuit 22 is provided with inverters Iv1, Iv2, a reverse gate ND and an inverse gate NR. The signal OEN is coupled to the node e9, and the inverter Iv1 is coupled between the node e9 and the anti-gate ND to invert the signal OEN. The inverse gate ND reverses the inverse signal of the signal I and the signal OEN, and provides the operation result to the node e6. Inverter Iv2 inverts signal OEN to signal OENb and provides signal OENb to node e8. The inverse gate NR reverses the signal I and the signal OEN, and outputs the operation result to the node e5. Under the operation of the transmission front side circuit 22, the signals of the nodes e6 and e5 are related to the signal I and the signal OEN; when the signal OEN is logic 0, the signals of the nodes e5 and e6 are equal to the inverted signal of the signal I. When the signal OEN is logic 1, the node e5 is maintained at the operating voltage Vss, and the node e6 is the operating voltage VD33.

閘通電路24於節點e6與e7的兩端可分別視為一第一閘通端與一第二閘通端;節點e4則為一閘通控制端。閘通電路24中包括一電晶體N3(如一n通道金氧半場效電晶體)與一電晶P3(如一p通道金氧半場效電晶體);電晶體N3的閘極、源極與汲極分別耦接工作電壓VD33、節點e6與e7,電晶體P3的閘極、源極、汲極與體極則分別耦接節點e4、e7、e6與w。電晶體P3可依據節點e4的訊號選擇性地在節點e6與e7間導通。舉例而言,當節點e7的電壓比節點e4的電壓高出一預設值(即電晶體P3的臨限電壓的絕對值)時,電晶體P3導通。The gate circuit 24 can be regarded as a first gate terminal and a second gate terminal respectively at the two ends of the nodes e6 and e7; the node e4 is a gate control terminal. The gate pass circuit 24 includes a transistor N3 (such as an n-channel MOS field-effect transistor) and an electro-optic crystal P3 (such as a p-channel gold-oxygen half-field effect transistor); the gate, source and drain of the transistor N3. The operating voltage VD33, the nodes e6 and e7 are respectively coupled, and the gate, the source, the drain and the body of the transistor P3 are respectively coupled to the nodes e4, e7, e6 and w. The transistor P3 can be selectively turned on between the nodes e6 and e7 according to the signal of the node e4. For example, when the voltage of the node e7 is higher than the voltage of the node e4 by a predetermined value (ie, the absolute value of the threshold voltage of the transistor P3), the transistor P3 is turned on.

傳輸電路26於節點e7與e5的兩端可分別視為一第一訊號端與一第二訊號端,節點e0則為一輸出端。傳輸電路26中包括一個(或多個)電晶體P1以及一組(或多組)串聯的電晶體N1與N2。電晶體P1(例如說是一p通道金氧半場效電晶體)的閘極、源極、汲極與體極分別耦接節點e7、工作電壓VD33、節點e0與w;接墊PAD即耦接於節點e0。電晶體N1與N2(例如說是n通道金氧半場效電晶體)的閘極分別耦接節點e5與工作電壓VD33,電晶體N2的汲極耦接節點e0,源極則耦接電晶體N1的汲極;電晶體N1的源極則耦接工作電壓Vss。電晶體N2可作為一保護暨降壓電路,以適當地箝制電晶體N1的汲極電壓,使電晶體N1的汲極與源極間、閘極與源極間不會承受過大的電性壓力。電晶體P1與N1為驅動電晶體,分別依據節點e7與e5的訊號而運作,使節點e0的訊號關聯於節點e5與e7的訊號。The two ends of the nodes e7 and e5 can be regarded as a first signal end and a second signal end, respectively, and the node e0 is an output end. The transmission circuit 26 includes one (or more) transistors P1 and a set (or sets) of transistors N1 and N2 connected in series. The gate, the source, the drain and the body of the transistor P1 (for example, a p-channel gold-oxygen half-effect transistor) are respectively coupled to the node e7, the operating voltage VD33, the nodes e0 and w; the pad PAD is coupled At node e0. The gates of the transistors N1 and N2 (for example, n-channel MOS field-effect transistors) are respectively coupled to the node e5 and the operating voltage VD33, the gate of the transistor N2 is coupled to the node e0, and the source is coupled to the transistor N1. The drain of the transistor N1 is coupled to the operating voltage Vss. The transistor N2 can be used as a protection and step-down circuit to properly clamp the gate voltage of the transistor N1 so that the gate and the source of the transistor N1 do not withstand excessive electrical stress between the gate and the source. . The transistors P1 and N1 are driving transistors, which operate according to the signals of the nodes e7 and e5, respectively, so that the signal of the node e0 is associated with the signals of the nodes e5 and e7.

電阻R耦接於節點e0與e1之間,可作為一保護電路,例如一靜電放電保護電路;節點e1可視為一內部端。電晶體P2(例如一p通道金氧半場效電晶體)的閘極、汲極、源極與體極分別耦接於工作電壓VD33、節點e1、e7與W。電晶體N7(例如一n通道金氧半場效電晶體)的閘極、汲極與源極分別耦接於工作電壓VD33、節點e1與節點e2,可作為一降壓電路;當節點e1的電壓相當於工作電壓VD33時,電晶體N7可使節點e2的電壓低於工作電壓VD33。The resistor R is coupled between the nodes e0 and e1 and can be used as a protection circuit, such as an electrostatic discharge protection circuit; the node e1 can be regarded as an internal terminal. The gate, the drain, the source and the body of the transistor P2 (for example, a p-channel MOS field-effect transistor) are respectively coupled to the operating voltage VD33, the nodes e1, e7 and W. The gate, the drain and the source of the transistor N7 (for example, an n-channel gold-oxygen half-effect transistor) are respectively coupled to the operating voltage VD33, the node e1 and the node e2, and can be used as a step-down circuit; when the voltage of the node e1 When the operating voltage VD33 is equivalent, the transistor N7 can cause the voltage of the node e2 to be lower than the operating voltage VD33.

開關30於節點e2與e4的兩端分別為一第一耦接端與一第二耦接端,節點e2經由電晶體N7耦接於節點e1;節點e8與e9則為兩開關控制端。開關30內包括兩電晶體P6(例如一p通道金氧半場效電晶體)與電晶體N6(例如一n通道金氧半場效電晶體)。電晶體N6的閘極、汲極與源極(即兩個通道端)分別耦節點e9的致能訊號OEN、節點e2與e4。電晶體P6的閘極、汲極與源極(二通道端)則分別耦接訊號OEN的反相訊號OENb、節點e4與e2;電晶體P6的體極則耦接節點w。電晶體P6與電晶體N6可以是一對互補(complementary)電晶體。開關30可依據訊號OEN選擇性地在節點e2與e4間導通。當訊號OEN為邏輯1時,開關30將節點e2導通至節點e4;當訊號OEN為邏輯0時,節點e2則不導通至節點e4。The switch 30 is a first coupling end and a second coupling end respectively at the two ends of the nodes e2 and e4. The node e2 is coupled to the node e1 via the transistor N7; the nodes e8 and e9 are the two switch control terminals. The switch 30 includes two transistors P6 (e.g., a p-channel MOS field effect transistor) and a transistor N6 (e.g., an n-channel MOS field effect transistor). The gate, the drain and the source of the transistor N6 (ie, the two channel ends) are respectively coupled to the enable signal OEN of the node e9, the nodes e2 and e4. The gate, the drain and the source (the two-channel end) of the transistor P6 are respectively coupled to the inverted signal OENb of the signal OEN, the nodes e4 and e2, and the body of the transistor P6 is coupled to the node w. The transistor P6 and the transistor N6 may be a pair of complementary transistors. Switch 30 is selectively conductive between nodes e2 and e4 in accordance with signal OEN. When the signal OEN is logic 1, the switch 30 turns on the node e2 to the node e4; when the signal OEN is logic 0, the node e2 does not conduct to the node e4.

開關32耦接於節點e4與工作電壓Vss之間,包括電晶體N4與N5(例如說是兩n通道金氧半場效電晶體)。電晶體N4的閘極、汲極與源極(兩通道端)分別耦接工作電壓VD33、節點e4與電晶體N5的汲極。電晶體N5的閘極與源極則分別耦接訊號OENb與工作電壓Vss。類似電晶體N2,電晶體N4可以限制電晶體N5的汲極電壓;電晶體N5則使開關32得以依據訊號OEN選擇性地將節點e4導通至工作電壓Vss。當訊號OEN為邏輯0時,電晶體N5導通,使節點e4的電壓相當於工作電壓Vss。當訊號OEN為邏輯1時,電晶體N5不導通,節點e4的電壓就不會取決於工作電壓Vss。The switch 32 is coupled between the node e4 and the operating voltage Vss, and includes transistors N4 and N5 (for example, two n-channel MOS field-effect transistors). The gate, the drain and the source (the two channel ends) of the transistor N4 are respectively coupled to the operating voltage VD33, the node e4 and the drain of the transistor N5. The gate and the source of the transistor N5 are respectively coupled to the signal OENb and the operating voltage Vss. Similar to transistor N2, transistor N4 can limit the gate voltage of transistor N5; transistor N5 allows switch 32 to selectively conduct node e4 to operating voltage Vss in accordance with signal OEN. When the signal OEN is logic 0, the transistor N5 is turned on, so that the voltage of the node e4 is equivalent to the operating voltage Vss. When the signal OEN is logic 1, the transistor N5 is not turned on, and the voltage of the node e4 does not depend on the operating voltage Vss.

偏壓電路28耦接於節點e4、e1與w之間,包括有電晶體P7與P8(例如兩p通道金氧半場效電晶體),節點w為一井極端。電晶體P8的閘極、源極、汲極與體極分別耦接工作電壓VD33、節點e1、e4與w;電晶體P7的閘極與源極分別耦接節點e4與工作電壓VD33,體極與汲極則共同耦接於節點w。偏壓電路28可以使節點w的訊號(電壓大小)關聯於節點e1與e4的訊號。The bias circuit 28 is coupled between the nodes e4, e1 and w, and includes transistors P7 and P8 (for example, two p-channel MOS field-effect transistors), and the node w is a well terminal. The gate, the source, the drain and the body of the transistor P8 are respectively coupled to the operating voltage VD33, the nodes e1, e4 and w; the gate and the source of the transistor P7 are respectively coupled to the node e4 and the operating voltage VD33, the body pole Coupling with the bungee is at node w. Bias circuit 28 can correlate the signal (voltage magnitude) of node w to the signals of nodes e1 and e4.

接收電路34耦接於節點e2與e3之間,包括兩電晶體P9、P0(例如一對p通道金氧半場效電晶體)與一電晶體N0(如一n通道金氧半場效電晶體)。電晶體P9的閘極耦接至節點e1,體極與源極耦接於工作電壓VD33,汲極則耦接於電晶體P0的源極。電晶體P0的閘極、汲極與體極分別耦接於節點e2、e3與工作電壓VD33。電晶體N0的閘極、汲極與源極分別耦接節點e2、e3與工作電壓Vss。The receiving circuit 34 is coupled between the nodes e2 and e3, and includes two transistors P9, P0 (for example, a pair of p-channel MOS field-effect transistors) and a transistor N0 (such as an n-channel MOS field-effect transistor). The gate of the transistor P9 is coupled to the node e1, the body and the source are coupled to the operating voltage VD33, and the drain is coupled to the source of the transistor P0. The gate, the drain and the body of the transistor P0 are coupled to the nodes e2 and e3 and the operating voltage VD33, respectively. The gate, the drain and the source of the transistor N0 are coupled to the nodes e2 and e3 and the operating voltage Vss, respectively.

接收前側電路36中可包括有三電晶體U1p、U2p與U3p(例如三個p通道金氧半場效電晶體),和另三個電晶體U1n、U2n與U3n(例如三個n通道金氧半場效電晶體)形成三個串聯的反相器。電晶體U1p至U3p的源極與體極均耦接至工作電壓VD33;電晶體U1n至U3n的源極均耦接至工作電壓Vss。接收電路34可將節點e2的訊號接收為節點e3的訊號,接收前側電路36則進一步將節點e3的訊號接收為訊號C。The receiving front side circuit 36 may include three transistors U1p, U2p and U3p (for example, three p-channel gold oxide half field effect transistors), and three other transistors U1n, U2n and U3n (for example, three n-channel gold oxide half-field effects). The transistor) forms three inverters connected in series. The source and the body of the transistors U1p to U3p are both coupled to the operating voltage VD33; the sources of the transistors U1n to U3n are all coupled to the operating voltage Vss. The receiving circuit 34 can receive the signal of the node e2 as the signal of the node e3, and the receiving front side circuit 36 further receives the signal of the node e3 as the signal C.

在第4圖中,電晶體N0至N7、U1n至U3n的體極(未繪示)均共同耦接至工作電壓Vss。In FIG. 4, the body poles (not shown) of the transistors N0 to N7, U1n to U3n are all coupled to the operating voltage Vss.

本發明輸出入電路20的運作情形可描述如下。當訊號OEN為邏輯0時,訊號OENb為邏輯1,節點e5與e6的訊號皆為訊號I的反相訊號,開關30的電晶體N6與P6皆關閉不導通。開關32中的電晶體N4與N5則皆導通,故由開關32主控節點e4的電壓,使節點e4的電壓相當於工作電壓Vss。節點e4的低電壓使電晶體P7導通,將節點w的電壓維持為工作電壓VD33;電晶體P8則不導通。節點e4的低電壓亦使電晶體P3導通,使節點e6的訊號可傳輸至節點e7。如此,傳輸電路26中的電晶體P1與N1就可依據訊號I驅動接墊PAD的訊號,將訊號I傳送出去。舉例而言,若訊號I為邏輯0,電晶體P1關閉,電晶體N1則會導通,將節點e0的訊號拉低至工作電壓Vss,以傳送邏輯0。相對地,若訊號I為邏輯1,電晶體N1關閉,電晶體P1則導通,將節點e0的訊號拉高至工作電壓VD33,以傳送邏輯1。再者,電晶體P2亦不導通。The operation of the input/output circuit 20 of the present invention can be described as follows. When the signal OEN is logic 0, the signal OENb is logic 1, the signals of the nodes e5 and e6 are the inverted signals of the signal I, and the transistors N6 and P6 of the switch 30 are turned off and non-conducting. The transistors N4 and N5 in the switch 32 are both turned on, so the voltage of the node e4 is controlled by the voltage of the node 32 by the switch 32, which is equivalent to the operating voltage Vss. The low voltage of the node e4 turns on the transistor P7, maintaining the voltage of the node w at the operating voltage VD33; the transistor P8 is not conducting. The low voltage of node e4 also turns on transistor P3, so that the signal of node e6 can be transmitted to node e7. Thus, the transistors P1 and N1 in the transmission circuit 26 can transmit the signal I according to the signal of the driver pad PAD according to the signal I. For example, if the signal I is logic 0, the transistor P1 is turned off, the transistor N1 is turned on, and the signal of the node e0 is pulled down to the operating voltage Vss to transfer the logic 0. In contrast, if the signal I is logic 1, the transistor N1 is turned off, and the transistor P1 is turned on, and the signal of the node e0 is pulled up to the operating voltage VD33 to transfer the logic 1. Furthermore, the transistor P2 is also not turned on.

當訊號OEN為邏輯1時,輸出入電路20會使接墊PAD的訊號可由其他電路(如另一晶片的另一輸出入電路,未繪示)驅動。由於訊號OEN為邏輯1,開關32的電晶體N5不導通,開關32不再控制節點e4的電壓;開關30的電晶體P6與N6則都導通,將節點e2導通至節點e4,電晶體N7則將節點e1導通至節點e2。若接墊PAD的訊號不高於工作電壓VD33,電晶體N7會使節點e2的電壓小於工作電壓VD33,經由節點e4使電晶體P7維持導通,以將節點W的電壓維持於工作電壓VD33;電晶體P8則關閉。而接收電路34則依據節點e2的電壓控制節點e3的電壓,使接墊PAD的訊號可經由節點e0、e1、e2與e3而被接收為前側接收電路36的訊號C。舉例而言,若接墊PAD被驅動至邏輯0,接收電路34中的電晶體N0關閉,電晶體P9與P0則皆導通,將節點e3的電壓反相地拉昇至工作電壓VD33。若接墊PAD的電壓被驅動至工作電壓VD33,電晶體N0會導通,將節點e3的電壓反相拉低至工作電壓Vss。When the signal OEN is logic 1, the input-output circuit 20 causes the signal of the pad PAD to be driven by other circuits (such as another output of another chip into the circuit, not shown). Since the signal OEN is logic 1, the transistor N5 of the switch 32 is not turned on, the switch 32 no longer controls the voltage of the node e4; the transistors P6 and N6 of the switch 30 are both turned on, the node e2 is turned on to the node e4, and the transistor N7 is turned on. The node e1 is turned on to the node e2. If the signal of the pad PAD is not higher than the working voltage VD33, the transistor N7 causes the voltage of the node e2 to be lower than the operating voltage VD33, and the transistor P7 is maintained to be turned on via the node e4 to maintain the voltage of the node W at the operating voltage VD33; Crystal P8 is turned off. The receiving circuit 34 controls the voltage of the node e3 according to the voltage of the node e2, so that the signal of the pad PAD can be received as the signal C of the front side receiving circuit 36 via the nodes e0, e1, e2 and e3. For example, if the pad PAD is driven to logic 0, the transistor N0 in the receiving circuit 34 is turned off, and the transistors P9 and P0 are both turned on, and the voltage of the node e3 is pulled up to the operating voltage VD33 in reverse. If the voltage of the pad PAD is driven to the operating voltage VD33, the transistor N0 is turned on, and the voltage of the node e3 is inverted to the operating voltage Vss.

若接墊PAD的電壓被驅動至超過工作電壓VD33,電晶體P8會在節點e1與e4間導通,電晶體P7則關閉,使節點w的電壓不再受控於工作電壓VD33;節點w的電壓將可隨接墊PAD的電壓浮動,以超過工作電壓VD33。電晶體P2會將節點e1導通至節點e7,故電晶體P1可以被完全的關閉;電晶體P1的閘極與汲極電壓均會超過工作電壓VD33,但由於節點w的電壓也會超過工作電壓VD33,故電晶體P1的閘極、源極、汲極與體極間電壓差可維持在電晶體耐受範圍內。電晶體P3也會因節點e4的電壓而完全關閉,以保護反及閘ND不受高接墊電壓影響。換言之,當接墊PAD的電壓超過工作電壓VD33,本發明輸出入電路20可減抑高接墊電壓的影響,使各電晶體受到保護,不會承受過高的電性壓力。If the voltage of the pad PAD is driven beyond the operating voltage VD33, the transistor P8 will be turned on between the nodes e1 and e4, and the transistor P7 will be turned off, so that the voltage of the node w is no longer controlled by the operating voltage VD33; the voltage of the node w The voltage of the pad PAD can be floated to exceed the operating voltage VD33. The transistor P2 turns on the node e1 to the node e7, so the transistor P1 can be completely turned off; the gate and drain voltages of the transistor P1 both exceed the operating voltage VD33, but the voltage of the node w also exceeds the operating voltage. VD33, so the voltage difference between the gate, source, drain and body of transistor P1 can be maintained within the tolerance range of the transistor. The transistor P3 is also completely turned off by the voltage of the node e4 to protect the anti-gate ND from the high pad voltage. In other words, when the voltage of the pad PAD exceeds the operating voltage VD33, the input/output circuit 20 of the present invention can reduce the influence of the high pad voltage, so that the transistors are protected from excessively high electrical stress.

在第2圖的習知輸出入電路10中,控制電晶體Tp1的節點a6會經由電晶體Tp4與Tp5而耦接於節點a5,且節點a5會因電晶體Tp8的關閉而絕緣於接墊PAD1。因此,當習知輸出入電路10在傳輸邏輯1後要切換接收邏輯0時,節點a5的電壓只能依賴電荷分享緩慢地改變,並影響節點a6的電壓轉變速度,使習知輸出入電路10無法快速地接收邏輯0,就如第3圖所示。In the conventional input-output circuit 10 of FIG. 2, the node a6 of the control transistor Tp1 is coupled to the node a5 via the transistors Tp4 and Tp5, and the node a5 is insulated from the pad PAD1 by the closing of the transistor Tp8. . Therefore, when the conventional input/output circuit 10 switches the receiving logic 0 after transmitting the logic 1, the voltage of the node a5 can only slowly change depending on the charge sharing, and affects the voltage transition speed of the node a6, so that the conventional output is input into the circuit 10. It is not possible to receive logic 0 quickly, as shown in Figure 3.

相較之下,當本發明於第4圖中的輸出入電路20在傳送邏輯1後要切換接收邏輯0時,由於控制電晶體P1的節點e6係絕緣於偏壓電路28的節點e4,故節點e6的電壓可獨立地快速響應訊號OEN的變化。再者,在由接墊PAD接收邏輯0時,接墊PAD的電壓可經由節點e0、e1、e2與開關30而傳輸至節點e4,快速地使電晶體P3導通,而節點e6的電壓就可迅速地傳輸至節點e7,以使電晶體P1關閉,讓接墊PAD能被快速地驅動至低位準的邏輯0。In contrast, when the input/output circuit 20 of the present invention switches the reception logic 0 after transmitting the logic 1, since the node e6 of the control transistor P1 is insulated from the node e4 of the bias circuit 28, Therefore, the voltage of the node e6 can independently respond to the change of the signal OEN. Moreover, when the logic 0 is received by the pad PAD, the voltage of the pad PAD can be transmitted to the node e4 via the nodes e0, e1, e2 and the switch 30, and the transistor P3 can be quickly turned on, and the voltage of the node e6 can be It is quickly transferred to node e7 to turn off transistor P1, allowing pad PAD to be driven quickly to a low level logic zero.

請參考第5圖,其所示意的即是本發明輸出入電路20在傳送、接收切換時相關訊號的波形時序。輸出入電路20用以實現第1圖中的輸出入電路100,以和輸出入電路102交換資料;輸出入電路20的訊號OEN、I、C與接墊PAD即分別為輸出入電路100的訊號OEN1、I1、C1與接墊PAD1。Please refer to FIG. 5, which is a waveform sequence of the relevant signals when the input/output circuit 20 of the present invention switches between transmission and reception. The input/output circuit 20 is used to implement the input/output circuit 100 in FIG. 1 to exchange data with the input/output circuit 102. The signals OEN, I, C and the pad PAD of the input/output circuit 20 are signals input to the circuit 100, respectively. OEN1, I1, C1 and pad PAD1.

如第5圖所示,在時點t0至t1之間,訊號OEN為邏輯0,輸出入電路20將接墊PAD驅動至邏輯1,以將邏輯1傳輸至接墊PAD2的輸出入電路102。在時點t1之後,訊號OEN為邏輯1,訊號OEN2為邏輯0,改由輸出入電路102將接墊PAD2驅動至邏輯0,而本發明輸出入電路20的接墊PAD可快速地響應而被驅動至邏輯0,迅速地由輸出入電路102接收邏輯0。As shown in FIG. 5, between time t0 and t1, signal OEN is logic 0, and input/output circuit 20 drives pad PAD to logic 1 to transfer logic 1 to input and output circuit 102 of pad PAD2. After the time t1, the signal OEN is logic 1, the signal OEN2 is logic 0, and the input and output circuit 102 drives the pad PAD2 to logic 0, and the pad PAD of the output circuit 20 of the present invention can be quickly responded and driven. To logic 0, a logic 0 is quickly received by the output-in circuit 102.

總結來說,相較於習知技術,本發明不僅能保護輸出入電路中的各電晶體耐受高接墊電壓,還能在傳送、接收切換時增進接墊訊號的響應速度,進而改善資料交換的效能。In summary, compared with the prior art, the present invention not only protects the transistors in the input and output circuits from high-pad voltage, but also improves the response speed of the pad signals during transmission and reception switching, thereby improving the data. The effectiveness of the exchange.

綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10、20、100-102...輸出入電路10, 20, 100-102. . . Output circuit

12...走線12. . . Traces

22...傳輸前側電路twenty two. . . Transmission front side circuit

24...閘通電路twenty four. . . Gate circuit

26...傳輸電路26. . . Transmission circuit

28...偏壓電路28. . . Bias circuit

30、32...開關30, 32. . . switch

34...接收電路34. . . Receiving circuit

36...接收前側電路36. . . Receiving front side circuit

Tx1-Tx2...傳輸模組Tx1-Tx2. . . Transmission module

Rx1-Rx2...接收模組Rx1-Rx2. . . Receiving module

Tp0-Tp9、Tn0-Tn7、P0-P3、P6-P9、N0-N7、Dp1-Dp3、Dn1-Dn3、U1p-U3p、U1n-U3n...電晶體Tp0-Tp9, Tn0-Tn7, P0-P3, P6-P9, N0-N7, Dp1-Dp3, Dn1-Dn3, U1p-U3p, U1n-U3n. . . Transistor

R0、R...電阻R0, R. . . resistance

a0-a9、e0-e9、w...節點A0-a9, e0-e9, w. . . node

VD33、Vss...工作電壓VD33, Vss. . . Operating Voltage

I、OEN、C、I1-I2、OEN1-OEN2、C1-C2、OENb...訊號I, OEN, C, I1-I2, OEN1-OEN2, C1-C2, OENb. . . Signal

PAD1-PAD2、PAD...接墊PAD1-PAD2, PAD. . . Pad

ND0、ND...反及閘ND0, ND. . . Reverse gate

NR0、NR...反或閘NR0, NR. . . Reverse or gate

Iva-Ivb、Iv1-Iv2...反相器Iva-Ivb, Iv1-Iv2. . . inverter

t0-t2...時點T0-t2. . . Time

第1圖繪示的是不同輸出入電路進行資料交換的示意圖。Figure 1 is a schematic diagram of data exchange between different input and output circuits.

第2圖示意的是一習知輸出入電路。Figure 2 illustrates a conventional output-in circuit.

第3圖以相關訊號的波形時序示意第2圖輸出入電路在傳送、接收切換時的響應。Fig. 3 is a diagram showing the response of the input/output circuit at the time of transmission and reception switching in the waveform timing of the correlation signal.

第4圖示意的是依據本發明一實施例的輸出入電路。Figure 4 illustrates an input-output circuit in accordance with an embodiment of the present invention.

第5圖以相關訊號的波形時序示意第4圖輸出入電路在傳送、接收切換時的響應。Fig. 5 is a diagram showing the response of the output/output circuit at the time of transmission and reception switching with the waveform timing of the relevant signal.

20...輸出入電路20. . . Output circuit

22...傳輸前側電路twenty two. . . Transmission front side circuit

24...閘通電路twenty four. . . Gate circuit

26...傳輸電路26. . . Transmission circuit

28...偏壓電路28. . . Bias circuit

30、32...開關30, 32. . . switch

34...接收電路34. . . Receiving circuit

36...接收前側電路36. . . Receiving front side circuit

P0-P3、P6-P9、N0-N7、U1p-U3p、U1n-U3n...電晶體P0-P3, P6-P9, N0-N7, U1p-U3p, U1n-U3n. . . Transistor

R...電阻R. . . resistance

e0-e9、w...節點E0-e9, w. . . node

VD33、Vss...工作電壓VD33, Vss. . . Operating Voltage

I、OEN、C、OENb...訊號I, OEN, C, OENb. . . Signal

PAD...接墊PAD. . . Pad

ND...反及閘ND. . . Reverse gate

NR...反或閘NR. . . Reverse or gate

Iv1-Iv2...反相器Iv1-Iv2. . . inverter

Claims (8)

一種輸出入電路,包含:一閘通電路,具有一第一閘通端、一第二閘通端與一閘通控制端,依據該閘通控制端的訊號選擇性地在該第一閘通端與該第二閘通端間導通;該第一閘通端的訊號係關聯於一輸入訊號與一致能訊號;一傳輸電路,具有一第一訊號端與一輸出端,分別耦接該第二閘通端與一接墊,並使該輸出端的訊號關聯於該第一訊號端的訊號;以及一第一開關,具有一第一耦接端與一第二耦接端,分別耦接一內部端與該閘通控制端,並依據該致能訊號選擇性地在該第一耦接端與該第二耦接端間導通;其中該內部端係耦接於該接墊。An input-in circuit includes: a gate-connecting circuit having a first gate-passing terminal, a second gate-passing terminal and a gate-passing control terminal, and selectively selecting the signal according to the gate-passing control terminal at the first gate-passing end The signal is connected to the second gate; the signal of the first gate is associated with an input signal and a uniform signal; a transmission circuit has a first signal end and an output end coupled to the second gate respectively And a first switch having a first coupling end and a second coupling end respectively coupled to an inner end and a first switch; and a first switch having a signal coupled to the signal at the first signal end; The gate is controlled to be electrically connected between the first coupling end and the second coupling end according to the enabling signal; wherein the internal end is coupled to the pad. 如申請專利範圍第1項所述的輸出入電路,其中該第一開關包含:一第一電晶體,具有一第一閘極與兩個第一通道端,分別耦接該致能訊號、該第一耦接端與該第二耦接端;以及一第二電晶體,具有一第二閘極與兩個第二通道端,分別耦接該致能訊號的反相訊號、該第一耦接端與該第二耦接端;其中,該第一電晶體與該第二電晶體係一對互補電晶體。The input/output circuit of claim 1, wherein the first switch comprises: a first transistor having a first gate and two first channel ends, respectively coupled to the enable signal, a first coupling end and the second coupling end; and a second transistor having a second gate and two second channel ends respectively coupled to the inversion signal of the enable signal, the first coupling The second transistor and the second coupling end; wherein the first transistor and the second transistor system are complementary to each other. 如申請專利範圍第1項所述的輸出入電路,更包含:一第二開關,耦接於該第二耦接端與一第二工作電壓之間,依據該致能訊號選擇性地將該第二耦接端導通至該第二工作電壓。The input/output circuit of claim 1, further comprising: a second switch coupled between the second coupling end and a second operating voltage, selectively selecting the second switching voltage according to the enabling signal The second coupling end is electrically connected to the second working voltage. 如申請專利範圍第3項所述的輸出入電路,其中該第二開關包含:一第一電晶體,具有一第一閘極與兩個第一通道端;該第一閘極耦接一第一工作電壓;以及一第二電晶體,具有一第二閘極與兩個第二通道端;該第二閘極耦接該致能訊號的反相訊號;其中,該兩第一通道端的其中之一耦接於該第二耦接端,該兩第一通道端的另一個則耦接於該兩第二通道端的其中之一,且該兩第二通道端的另一個耦接於該第二工作電壓。The input/output circuit of claim 3, wherein the second switch comprises: a first transistor having a first gate and two first channel ends; the first gate coupled to the first An operating voltage; and a second transistor having a second gate and two second channel ends; the second gate is coupled to the inversion signal of the enable signal; wherein the two first channel ends are One of the two first channel ends is coupled to one of the two second channel ends, and the other of the two second channel ends is coupled to the second operation. Voltage. 如申請專利範圍第1項所述的輸出入電路,更包含一偏壓電路,耦接於該第二耦接端、該內部端與一井極端之間,使該井極端的訊號關聯於該內部端與該第二耦接端的訊號;而該傳輸電路包含:一第一驅動電晶體,具有一第一閘極、兩第一通道端與一第一體極,分別耦接該第一訊號端、一第一工作電壓、該輸出端與該井極端。The input/output circuit of claim 1, further comprising a bias circuit coupled between the second coupling end, the inner end and a well terminal, so that the signal of the well extreme is associated with a signal of the first end and the second coupling end; and the transmission circuit includes: a first driving transistor having a first gate, two first channel ends and a first body, respectively coupled to the first The signal terminal, a first operating voltage, the output terminal and the well terminal. 如申請專利範圍第1項所述的輸出入電路,其中,該傳輸電路更具有一第二訊號端,並使該輸出端的訊號關聯於該第一訊號端與該第二訊號端的訊號。The input/output circuit of claim 1, wherein the transmission circuit further has a second signal end, and the signal of the output end is associated with the signal of the first signal end and the second signal end. 如申請專利範圍第1項所述的輸出入電路,更包含:一接收電路,耦接於該第一耦接端,依據該第一耦接端的訊號提供一接收訊號。The input/output circuit of claim 1, further comprising: a receiving circuit coupled to the first coupling end, and providing a receiving signal according to the signal of the first coupling end. 如申請專利範圍第1項所述的輸出入電路,其中該第一開關包含一開關控制端,耦接於該致能訊號或該致能訊號的反相訊號。The input/output circuit of claim 1, wherein the first switch comprises a switch control end coupled to the enable signal or the inversion signal of the enable signal.
TW101113520A 2012-04-16 2012-04-16 Input/output circuit TWI466445B (en)

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US6236236B1 (en) * 1999-06-02 2001-05-22 National Semiconductor Corporation 2.5 volt input/output buffer circuit tolerant to 3.3 and 5 volts
US6188243B1 (en) * 1999-06-09 2001-02-13 United Integrated Circuits Corp. Input/output circuit with high input/output voltage tolerance
US7113018B2 (en) * 2004-10-28 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage tolerant I/O circuit using native NMOS transistor for improved performance
TWI302025B (en) * 2006-05-25 2008-10-11 Univ Nat Chiao Tung Mixed-voltage input/output buffer having low-voltage design
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