TW201343707A - Resin composition, cured product thereof and optical semiconductor device - Google Patents
Resin composition, cured product thereof and optical semiconductor device Download PDFInfo
- Publication number
- TW201343707A TW201343707A TW102100231A TW102100231A TW201343707A TW 201343707 A TW201343707 A TW 201343707A TW 102100231 A TW102100231 A TW 102100231A TW 102100231 A TW102100231 A TW 102100231A TW 201343707 A TW201343707 A TW 201343707A
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- TW
- Taiwan
- Prior art keywords
- epoxy resin
- optical semiconductor
- resin composition
- semiconductor element
- cured product
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 95
- 230000003287 optical effect Effects 0.000 title claims description 93
- 239000011342 resin composition Substances 0.000 title description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 116
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 116
- 239000000203 mixture Substances 0.000 claims abstract description 75
- 239000004593 Epoxy Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 27
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 10
- 125000001424 substituent group Chemical group 0.000 claims abstract description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 125000002723 alicyclic group Chemical group 0.000 claims description 6
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 150000001721 carbon Chemical class 0.000 claims description 3
- 239000011256 inorganic filler Substances 0.000 description 21
- 229910003475 inorganic filler Inorganic materials 0.000 description 21
- 239000003963 antioxidant agent Substances 0.000 description 15
- -1 n-octyl Chemical group 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 230000003078 antioxidant effect Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000007983 Tris buffer Substances 0.000 description 9
- 239000000835 fiber Substances 0.000 description 8
- 230000004043 responsiveness Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000004848 polyfunctional curative Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010455 vermiculite Substances 0.000 description 5
- 229910052902 vermiculite Inorganic materials 0.000 description 5
- 235000019354 vermiculite Nutrition 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 125000002619 bicyclic group Chemical group 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- NZNMSOFKMUBTKW-UHFFFAOYSA-M cyclohexanecarboxylate Chemical compound [O-]C(=O)C1CCCCC1 NZNMSOFKMUBTKW-UHFFFAOYSA-M 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- XOUQAVYLRNOXDO-UHFFFAOYSA-N 2-tert-butyl-5-methylphenol Chemical compound CC1=CC=C(C(C)(C)C)C(O)=C1 XOUQAVYLRNOXDO-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XCPFSALHURPPJE-UHFFFAOYSA-N (3,5-ditert-butyl-4-hydroxyphenyl) propanoate Chemical compound CCC(=O)OC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 XCPFSALHURPPJE-UHFFFAOYSA-N 0.000 description 1
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical class C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- RGASRBUYZODJTG-UHFFFAOYSA-N 1,1-bis(2,4-ditert-butylphenyl)-2,2-bis(hydroxymethyl)propane-1,3-diol dihydroxyphosphanyl dihydrogen phosphite Chemical compound OP(O)OP(O)O.C(C)(C)(C)C1=C(C=CC(=C1)C(C)(C)C)C(O)(C(CO)(CO)CO)C1=C(C=C(C=C1)C(C)(C)C)C(C)(C)C RGASRBUYZODJTG-UHFFFAOYSA-N 0.000 description 1
- 125000005918 1,2-dimethylbutyl group Chemical group 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- LOLANUHFGPZTLQ-UHFFFAOYSA-N 1-ethoxydecane Chemical compound CCCCCCCCCCOCC LOLANUHFGPZTLQ-UHFFFAOYSA-N 0.000 description 1
- 125000006218 1-ethylbutyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- BGCSUUSPRCDKBQ-UHFFFAOYSA-N 2,4,8,10-tetraoxaspiro[5.5]undecane Chemical compound C1OCOCC21COCOC2 BGCSUUSPRCDKBQ-UHFFFAOYSA-N 0.000 description 1
- BVUXDWXKPROUDO-UHFFFAOYSA-N 2,6-di-tert-butyl-4-ethylphenol Chemical compound CCC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 BVUXDWXKPROUDO-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- 125000003229 2-methylhexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- YLUZWKKWWSCRSR-UHFFFAOYSA-N 3,9-bis(8-methylnonoxy)-2,4,8,10-tetraoxa-3,9-diphosphaspiro[5.5]undecane Chemical compound C1OP(OCCCCCCCC(C)C)OCC21COP(OCCCCCCCC(C)C)OC2 YLUZWKKWWSCRSR-UHFFFAOYSA-N 0.000 description 1
- PZRWFKGUFWPFID-UHFFFAOYSA-N 3,9-dioctadecoxy-2,4,8,10-tetraoxa-3,9-diphosphaspiro[5.5]undecane Chemical compound C1OP(OCCCCCCCCCCCCCCCCCC)OCC21COP(OCCCCCCCCCCCCCCCCCC)OC2 PZRWFKGUFWPFID-UHFFFAOYSA-N 0.000 description 1
- 125000003542 3-methylbutan-2-yl group Chemical group [H]C([H])([H])C([H])(*)C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- PRWJPWSKLXYEPD-UHFFFAOYSA-N 4-[4,4-bis(5-tert-butyl-4-hydroxy-2-methylphenyl)butan-2-yl]-2-tert-butyl-5-methylphenol Chemical compound C=1C(C(C)(C)C)=C(O)C=C(C)C=1C(C)CC(C=1C(=CC(O)=C(C=1)C(C)(C)C)C)C1=CC(C(C)(C)C)=C(O)C=C1C PRWJPWSKLXYEPD-UHFFFAOYSA-N 0.000 description 1
- VSAWBBYYMBQKIK-UHFFFAOYSA-N 4-[[3,5-bis[(3,5-ditert-butyl-4-hydroxyphenyl)methyl]-2,4,6-trimethylphenyl]methyl]-2,6-ditert-butylphenol Chemical compound CC1=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C(CC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)C(C)=C1CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 VSAWBBYYMBQKIK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004255 Butylated hydroxyanisole Substances 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- XYSNGNNDJGSUMY-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC XYSNGNNDJGSUMY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- GHKOFFNLGXMVNJ-UHFFFAOYSA-N Didodecyl thiobispropanoate Chemical compound CCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCC GHKOFFNLGXMVNJ-UHFFFAOYSA-N 0.000 description 1
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- CZBZUDVBLSSABA-UHFFFAOYSA-N butylated hydroxyanisole Chemical compound COC1=CC=C(O)C(C(C)(C)C)=C1.COC1=CC=C(O)C=C1C(C)(C)C CZBZUDVBLSSABA-UHFFFAOYSA-N 0.000 description 1
- 235000019282 butylated hydroxyanisole Nutrition 0.000 description 1
- 229940043253 butylated hydroxyanisole Drugs 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006063 cullet Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003337 fertilizer Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Substances C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000005244 neohexyl group Chemical group [H]C([H])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- GLQSJLXTVROKNU-UHFFFAOYSA-N phenyl phosphono hydrogen phosphate Chemical compound OP(O)(=O)OP(O)(=O)OC1=CC=CC=C1 GLQSJLXTVROKNU-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920006295 polythiol Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052917 strontium silicate Inorganic materials 0.000 description 1
- QSQXISIULMTHLV-UHFFFAOYSA-N strontium;dioxido(oxo)silane Chemical compound [Sr+2].[O-][Si]([O-])=O QSQXISIULMTHLV-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005494 tarnishing Methods 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- LVEOKSIILWWVEO-UHFFFAOYSA-N tetradecyl 3-(3-oxo-3-tetradecoxypropyl)sulfanylpropanoate Chemical compound CCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCC LVEOKSIILWWVEO-UHFFFAOYSA-N 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- IVIIAEVMQHEPAY-UHFFFAOYSA-N tridodecyl phosphite Chemical compound CCCCCCCCCCCCOP(OCCCCCCCCCCCC)OCCCCCCCCCCCC IVIIAEVMQHEPAY-UHFFFAOYSA-N 0.000 description 1
- WGKLOLBTFWFKOD-UHFFFAOYSA-N tris(2-nonylphenyl) phosphite Chemical compound CCCCCCCCCC1=CC=CC=C1OP(OC=1C(=CC=CC=1)CCCCCCCCC)OC1=CC=CC=C1CCCCCCCCC WGKLOLBTFWFKOD-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3236—Heterocylic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Polymers & Plastics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
本發明關於環氧樹脂組成物、其硬化物及光半導體裝置。 The present invention relates to an epoxy resin composition, a cured product thereof, and an optical semiconductor device.
半導體．電子機器裝置之密封材及封裝材所要求的可靠性，係隨著裝置之薄型化、小型化、高輸出化，而愈來愈高。作為一例，LED或LD(雷射二極體)等之光半導體元件，係小型且高效率地發出鮮明色之光。又，上述光半導體元件由於是半導體元件而長壽命，驅動特性優異，對於重複的振動或ON/OFF點燈之耐久性高。因此，上述光半導體元件係利用作為各種指示器或各種的光源。 semiconductor. The reliability required for the sealing material and the packaging material of the electronic equipment is increasing with the thinning, miniaturization, and high output of the device. As an example, an optical semiconductor element such as an LED or an LD (Laser Diode) emits bright light in a small size and efficiently. Further, the optical semiconductor element has a long life because it is a semiconductor element, and has excellent driving characteristics and high durability against repeated vibration or ON/OFF lighting. Therefore, the above optical semiconductor element is utilized as various indicators or various light sources.
作為收納如此的LED等之光半導體元件用的封裝材之一個，目前廣泛使用聚苯二甲醯胺樹脂(PPA樹脂)。 As one of the packaging materials for accommodating such an optical semiconductor element such as an LED, a polyphthalamide resin (PPA resin) is widely used.
然而，由於今日之光半導體技術的飛躍進步，光半導體裝置高輸出化及短波長化係顯著。因此，於可發出高能量光或可受光的光耦合器等之光半導體裝置中，使用以往 之PPA樹脂的光半導體元件密封材及封裝，係因長期間之使用而顯著劣化，容易引起封裝之著色、色不均之發生或密封樹脂之剝離、機械強度之降低等。因此，希望能有效地解決如此的問題。 However, due to the rapid advancement of today's optical semiconductor technology, the high output and short wavelength of optical semiconductor devices are remarkable. Therefore, in an optical semiconductor device such as an optical coupler that can emit high-energy light or light-receiving, use conventional The optical semiconductor element sealing material and package of the PPA resin are remarkably deteriorated due to use over a long period of time, and it is easy to cause coloring of the package, uneven color, peeling of the sealing resin, and reduction in mechanical strength. Therefore, I hope to solve such problems effectively.
與上述相關，下述專利文獻1中提案含有三衍生物環氧樹脂之光半導體元件封裝用樹脂組成物，此樹脂組成物係被視為耐熱性及耐光性優異。而且，下述專利文獻1中，作為三衍生物環氧樹脂，例示1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-三酮。 In connection with the above, the following Patent Document 1 contains three proposals. A resin composition for encapsulating an optical semiconductor element of an epoxy resin, which is considered to be excellent in heat resistance and light resistance. Further, in Patent Document 1 below, as three Derivative epoxy resin, exemplified by 1,3,5-tris(2,3-epoxypropyl)-1,3,5-three -2,4,6-trione.
專利文獻1：國際公開第2007/015426號 Patent Document 1: International Publication No. 2007/015426
然而，即使為如上述之含有由1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-三酮所成的環氧樹脂之樹脂組成物的硬化物，在耐光性之點也有難以說是得到充分的性能之情況。 However, even if it contains as described above, it is composed of 1,3,5-tris(2,3-epoxypropyl)-1,3,5-three The cured product of the resin composition of the epoxy resin formed by the 2,4,6-trione may not be said to have sufficient performance at the point of light resistance.
本發明之目的在於提供可形成耐光性優異的硬化物之環氧樹脂組成物、其硬化物及光半導體裝置。 An object of the present invention is to provide an epoxy resin composition capable of forming a cured product excellent in light resistance, a cured product thereof, and an optical semiconductor device.
本發明者們為了解決上述問題而重複專心致力的檢 討，結果發現作為環氧樹脂組成物中所含有的環氧樹脂，藉由使用具有三骨架的特定環氧化合物，可解決上述問題，終於完成本發明。 The inventors of the present invention have repeatedly conducted intensive reviews in order to solve the above problems, and as a result, found that the epoxy resin contained in the epoxy resin composition has three by use. The specific epoxy compound of the skeleton can solve the above problems, and finally the present invention has been completed.
即，本發明係環氧樹脂組成物，其含有環氧樹脂與硬化劑，其中前述環氧樹脂含有下述通式(1)所示的環氧化合物；
(上述通式(1)中，X1、X2及X3各自獨立地為下述通式(2)所示的取代基)；
(上述通式(2)中，m為1~10之整數，Y1、Y2、Y3及Y4各自獨立地表示氫原子、鹵基、取代或無取代之碳數1~10的直鏈狀脂肪族烴基、取代或無取代之碳數3~10的支鏈狀脂肪族烴基、取代或無取代之碳數3~10的脂環式脂肪族烴基或取代或無取代之芳香族烴基)。 (In the above formula (2), m is an integer of 1 to 10, and Y 1 , Y 2 , Y 3 and Y 4 each independently represent a hydrogen atom, a halogen group, a substituted or unsubstituted carbon number of 1 to 10 a chain aliphatic hydrocarbon group, a substituted or unsubstituted branched aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted alicyclic aliphatic hydrocarbon group having 3 to 10 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon group ).
依照本發明的環氧樹脂組成物，係藉由使該環氧樹脂組成物熱硬化，而可形成耐光性優異之硬化物。因此，本發明的環氧樹脂組成物係極適用於形成光半導體元件封裝，其暴露於自光半導體元件所出射之光中。 According to the epoxy resin composition of the present invention, the epoxy resin composition is thermally cured to form a cured product excellent in light resistance. Therefore, the epoxy resin composition of the present invention is extremely suitable for forming an optical semiconductor element package which is exposed to light emitted from the optical semiconductor element.
於上述環氧樹脂組成物的前述通式(2)中，Y1、Y2、Y3及Y4較佳為氫原子。 In the above formula (2) of the epoxy resin composition, Y 1 , Y 2 , Y 3 and Y 4 are preferably a hydrogen atom.
此時，與上述通式(2)中Y1、Y2、Y3及Y4為氫原子以外之情況相比，上述通式(1)所示的環氧化合物之黏度係變低。因此，上述環氧樹脂組成物係操作變容易者。 In this case, the viscosity of the epoxy compound represented by the above formula (1) is lower than the case where Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) are hydrogen atoms. Therefore, the above epoxy resin composition is easy to handle.
於上述環氧樹脂組成物的前述通式(2)中，m較佳為1。 In the above formula (2) of the above epoxy resin composition, m is preferably 1.
此時，與上述通式(2)中m為比1大之情況相比，上述通式(1)所示的環氧化合物係可得到更優異的熱響應性。因此，上述環氧樹脂組成物係成為具有更優異的熱響應性者。 In this case, the epoxy compound represented by the above formula (1) can obtain more excellent thermal responsiveness than when the m in the above formula (2) is larger than 1. Therefore, the above epoxy resin composition is one which has more excellent thermal responsiveness.
又，於上述環氧樹脂組成物中，前述環氧樹脂中的前述通式(1)所示的環氧化合物之含有率較佳為90.0質量%以上。 Moreover, in the epoxy resin composition, the content of the epoxy compound represented by the above formula (1) in the epoxy resin is preferably 90.0% by mass or more.
此時，與上述環氧樹脂中的上述通式(1)所示的環氧化合物之含有率未達90.0質量%之情況相比，上述環氧樹脂組成物係可形成具有更優異的耐光性之硬化物。 In this case, the epoxy resin composition can be formed to have more excellent light resistance than the case where the content of the epoxy compound represented by the above formula (1) in the epoxy resin is less than 90.0% by mass. Hardened matter.
又，本發明係將上述環氧樹脂組成物予以熱硬化而得之硬化物。 Further, the present invention is a cured product obtained by thermally curing the above epoxy resin composition.
依照本發明的硬化物，可具有優異之耐光性。 The cured product according to the present invention can have excellent light resistance.
又，本發明係光半導體裝置，其具備光半導體元件與將前述光半導體元件固定之光半導體元件封裝，其中前述光半導體元件封裝含有上述硬化物。 Furthermore, the present invention relates to an optical semiconductor device including an optical semiconductor element and an optical semiconductor element package in which the optical semiconductor element is fixed, wherein the optical semiconductor element package contains the cured product.
依照本發明的光半導體裝置，即使自光半導體元件所出射之光照射於光半導體元件封裝，也由於光半導體元件封裝含有具有優異的耐光性之硬化物，而光半導體裝置之長壽命化係變可能。 According to the optical semiconductor device of the present invention, even if the light emitted from the optical semiconductor element is irradiated onto the optical semiconductor element package, the optical semiconductor element package contains a cured product having excellent light resistance, and the long life of the optical semiconductor device is changed. may.
再者，於本發明中，所謂的「硬化物」，就是指具有比其形成時所用的環氧樹脂組成物之熔融黏度還大的熔融黏度者。 Further, in the present invention, the term "cured material" means a melt viscosity which is greater than the melt viscosity of the epoxy resin composition used for forming.
依照本發明，可提供能形成耐光性優異的硬化物之環氧樹脂組成物、其硬化物及光半導體裝置。 According to the present invention, it is possible to provide an epoxy resin composition capable of forming a cured product excellent in light resistance, a cured product thereof, and an optical semiconductor device.
10‧‧‧光半導體元件 10‧‧‧Optical semiconductor components
20‧‧‧光半導體元件封裝 20‧‧‧Optical semiconductor component package
100‧‧‧光半導體裝置 100‧‧‧Optical semiconductor devices
圖1係顯示本發明的光半導體裝置之一實施形態的截面圖。 Fig. 1 is a cross-sectional view showing an embodiment of an optical semiconductor device of the present invention.
以下，詳細說明本發明。 Hereinafter, the present invention will be described in detail.
本發明的環氧樹脂組成物含有環氧樹脂與硬化劑，其中環氧樹脂含有下述通式(1)所示的環氧化合物(以下僅稱「環氧化合物」)；
(上述通式(1)中，X1、X2及X3各自獨立地為下述通式(2)所示的取代基)；
(上述通式(2)中，m為1~10之整數，Y1、Y2、Y3及Y4各自獨立地表示氫原子、鹵基、取代或無取代之碳數1~10的直鏈狀脂肪族烴基、取代或無取代之碳數3~10的支鏈狀脂肪族烴基、取代或無取代之碳數3~10的脂環式脂肪族烴基或取代或無取代之芳香族烴基)。 (In the above formula (2), m is an integer of 1 to 10, and Y 1 , Y 2 , Y 3 and Y 4 each independently represent a hydrogen atom, a halogen group, a substituted or unsubstituted carbon number of 1 to 10 a chain aliphatic hydrocarbon group, a substituted or unsubstituted branched aliphatic hydrocarbon group having 3 to 10 carbon atoms, a substituted or unsubstituted alicyclic aliphatic hydrocarbon group having 3 to 10 carbon atoms or a substituted or unsubstituted aromatic hydrocarbon group ).
依照本發明的環氧樹脂組成物，係藉由使該環氧樹脂組成物熱硬化，而可形成耐光性優異的硬化物。因此，本發明的環氧樹脂組成物係極適用於形成光半導體元件封裝，其暴露於自光半導體元件所出射之光中。 According to the epoxy resin composition of the present invention, the epoxy resin composition is thermally cured to form a cured product excellent in light resistance. Therefore, the epoxy resin composition of the present invention is extremely suitable for forming an optical semiconductor element package which is exposed to light emitted from the optical semiconductor element.
關於本發明的環氧樹脂組成物可形成具有優異的耐光性之硬化物之理由，本發明者們推測如以下。 The reason why the epoxy resin composition of the present invention can form a cured product having excellent light resistance is as follows.
即，上述環氧樹脂組成物係含有具有三骨架的環氧化合物，具有三骨架的化合物係具有吸收紫外線而轉換成熱之紫外線吸收劑的機能。因此，上述環氧樹脂組成物係在將其熱硬化而得之硬化物中，可充分抑制因來自光半導體元件的光照射而發生的黃變。因此，如上述，本發明者們推測本發明的環氧樹脂組成物不是可以形成具有優異 的耐光性之硬化物嗎。 That is, the above epoxy resin composition contains three Skeleton epoxy compound with three The skeleton compound has a function of absorbing ultraviolet rays and converting it into a hot ultraviolet absorber. Therefore, the epoxy resin composition can sufficiently suppress yellowing caused by light irradiation from the optical semiconductor element in the cured product obtained by thermally curing the epoxy resin composition. Therefore, as described above, the inventors presumed that the epoxy resin composition of the present invention is not capable of forming a cured product having excellent light resistance.
又，本發明的環氧樹脂組成物，係在由其硬化所得之硬化物，可將具有紫外線吸收劑之機能的三骨架併入高分子鏈中。因此，本發明的環氧樹脂組成物係與含有具有三骨架的低分子之紫外線吸收劑作為添加劑的環氧樹脂組成物不同，於由其硬化所得之硬化物中，不使具有三骨架的成分滲出至硬化物的表面。即，本發明的環氧樹脂組成物係不易在其硬化物之表面使光反射率降低。因此，本發明的環氧樹脂組成物係有用於形成能藉由抑制光反射率之降低而抑制亮度的降低之光半導體裝置的光半導體元件封裝。 Further, the epoxy resin composition of the present invention is a cured product obtained by curing the same, and can have a function of an ultraviolet absorber. The skeleton is incorporated into the polymer chain. Therefore, the epoxy resin composition of the present invention has three The low-molecular ultraviolet absorber of the skeleton is different as the epoxy resin composition of the additive, and does not have three in the hardened product obtained by the hardening thereof. The components of the skeleton exude to the surface of the hardened material. That is, the epoxy resin composition of the present invention is less likely to lower the light reflectance on the surface of the cured product. Therefore, the epoxy resin composition of the present invention is an optical semiconductor device package for forming an optical semiconductor device capable of suppressing a decrease in luminance by suppressing a decrease in light reflectance.
再者，本發明的環氧樹脂組成物，係可比使用一般的環氧樹脂(例如1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-三酮或3,4-環氧基環己基甲基(3,p)4-環氧基)環己烷羧酸酯)作為環氧樹脂時，在更充分低的溫度下開始硬化。具體地，可在比含有1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-三酮或3,4-環氧基環己基甲基(3,p)4-氧基)環己烷羧酸酯之氧樹脂組成物的硬化開始溫度，還低20~30℃之溫度下開始硬化。因此，藉由本發明的光半導體封裝用樹脂組成物，可高效率製造硬化物。 Furthermore, the epoxy resin composition of the present invention can be compared with a general epoxy resin (for example, 1,3,5-tris(2,3-epoxypropyl)-1,3,5-three. -2,4,6-trione or 3,4-epoxycyclohexylmethyl(3,p)4-epoxy)cyclohexanecarboxylate) as an epoxy resin, more fully low Hardening begins at temperature. Specifically, it can be contained in a ratio of 1,3,5-tris(2,3-epoxypropyl)-1,3,5-three The curing initiation temperature of the oxygen resin composition of -2,4,6-trione or 3,4-epoxycyclohexylmethyl(3,p)4-oxy)cyclohexanecarboxylate is also lower than 20 Hardening begins at a temperature of ~30 °C. Therefore, the cured resin composition can be produced with high efficiency by the resin composition for optical semiconductor encapsulation of the present invention.
以下，詳細說明上述環氧樹脂組成物。 Hereinafter, the above epoxy resin composition will be described in detail.
如上述，本發明的光半導體元件用樹脂組成物係含有 上述環氧化合物。 As described above, the resin composition for an optical semiconductor device of the present invention contains The above epoxy compound.
上述通式(2)的Y1、Y2、Y3及Y4所示之鹵基，可舉出-F基、-Cl基、-Br基、-I基等。 Examples of the halogen group represented by Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) include a -F group, a -Cl group, a -Br group, a -I group and the like.
又，作為上述通式(2)的Y1、Y2、Y3及Y4所示之直鏈狀脂肪族烴基，例如可舉出甲基、乙基、正丙基、正丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基等。 In addition, examples of the linear aliphatic hydrocarbon group represented by Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) include methyl group, ethyl group, n-propyl group, n-butyl group and positive group. Amyl, n-hexyl, n-heptyl, n-octyl, n-decyl, n-decyl and the like.
另外，作為上述通式(2)的Y1、Y2、Y3及Y4所示之支鏈狀脂肪族烴基，例如可舉出異丙基、異丁基、第二丁基、第三丁基、異戊基、第二戊基、第三戊基、新戊基、2-甲基丁基、1,2-二甲基丙基、1-乙基丙基、異己基、第二己基、第三己基、新己基、2-甲基戊基、1,2-二甲基丁基、2,3-二甲基丁基、1-乙基丁基、異庚基、第二庚基、第三庚基、新庚基、環庚基、正辛基、異辛基、第二辛基、第三辛基、新辛基、2-乙基己基、異壬基、第二壬基、第三壬基、新壬基、異癸基、第二癸基、第三癸基、新癸基等。 In addition, examples of the branched aliphatic hydrocarbon group represented by Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) include isopropyl group, isobutyl group, second butyl group and third group. Butyl, isopentyl, second pentyl, third pentyl, neopentyl, 2-methylbutyl, 1,2-dimethylpropyl, 1-ethylpropyl, isohexyl, second Hexyl, third hexyl, neohexyl, 2-methylpentyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 1-ethylbutyl, isoheptyl, second Base, third heptyl, neoheptyl, cycloheptyl, n-octyl, isooctyl, second octyl, trioctyl, neooctyl, 2-ethylhexyl, isodecyl, second Base, third sulfhydryl, neodecyl, isodecyl, second ruthenium, third ruthenyl, neodecyl, and the like.
還有，作為上述通式(2)的Y1、Y2、Y3及Y4所示之脂環式脂肪族烴基，例如可舉出環丙基、環丁基、環戊基、環己基、十氫萘基、降冰片基、金剛烷基等。 In addition, examples of the alicyclic aliphatic hydrocarbon group represented by Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group and a cyclohexyl group. , decahydronaphthyl, norbornyl, adamantyl and the like.
又，作為上述通式(2)的Y1、Y2、Y3及Y4所示之芳香族烴基，例如可舉出苯基、萘基、蒽基等。 And, the general formula (2), Y 1, Y 2, Y 3 and Y 4 of the aromatic hydrocarbon group represented, for example, include phenyl, naphthyl, anthryl and the like.
另外，作為上述通式(2)的Y1、Y2、Y3及Y4所示之直鏈狀脂肪族烴基、支鏈狀脂肪族烴基、脂環式脂肪族 烴基及芳香族烴基之取代基，例如可舉出-F基、-Cl基、-Br基、-I基等的鹵基、碳數1~10的烷基、碳數1~10的烷氧基、碳數1~10的烷硫基等。 Further, the linear aliphatic hydrocarbon group, the branched aliphatic hydrocarbon group, the alicyclic aliphatic hydrocarbon group, and the aromatic hydrocarbon group represented by Y 1 , Y 2 , Y 3 and Y 4 of the above formula (2) are substituted. Examples of the group include a halogen group such as a -F group, a -Cl group, a -Br group or a -I group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and a carbon number of 1 to 10. Alkylthio group and the like.
於上述通式(2)中，Y1、Y2、Y3及Y4較佳為氫原子。 In the above formula (2), Y 1 , Y 2 , Y 3 and Y 4 are preferably a hydrogen atom.
此時，與上述通式(2)中Y1、Y2、Y3及Y4為氫原子以外時相比，上述環氧化合物的黏度係變低。因此，環氧樹脂組成物係變操作容易者。 In this case, when the Y 1 , Y 2 , Y 3 and Y 4 in the above formula (2) are other than a hydrogen atom, the viscosity of the epoxy compound is lower. Therefore, the epoxy resin composition is easy to handle.
如上述，於上述通式(2)中，m為1~10之整數。當m為比10大之整數時，上述環氧化合物之熱響應性變不充分。因此，此時環氧樹脂組成物之熱響應性變不充分。 As described above, in the above formula (2), m is an integer of from 1 to 10. When m is an integer larger than 10, the thermal reactivity of the above epoxy compound becomes insufficient. Therefore, the thermal responsiveness of the epoxy resin composition at this time becomes insufficient.
於上述通式(2)中，m較佳為1~3之整數，更佳為1~2之整數，特佳為1。 In the above formula (2), m is preferably an integer of from 1 to 3, more preferably an integer of from 1 to 2, particularly preferably 1.
當m為1時，與m比1大的整數時相比，上述通式(1)所示的環氧化合物係可得到更優異的熱響應性。因此，環氧樹脂組成物具有更優異的熱響應性。 When m is 1, the epoxy compound represented by the above formula (1) can obtain more excellent thermal responsiveness than when the integer is larger than 1 by m. Therefore, the epoxy resin composition has more excellent thermal responsiveness.
又，於上述通式(2)中，Y1、Y2、Y3及Y4為氫原子且m為1，即上述通式(1)所示的環氧化合物為下述式(3)所示的2,4,6-三(環氧丙氧基)-1,3,5-三係特佳。 Further, in the above formula (2), Y 1 , Y 2 , Y 3 and Y 4 are a hydrogen atom and m is 1, that is, the epoxy compound represented by the above formula (1) is represented by the following formula (3) 2,4,6-tris(epoxypropoxy)-1,3,5-three as shown It is very good.
此時，上述式(3)所示的環氧化合物係黏度低，而且具有特別優異的熱響應性。因此，此含有環氧化合物之環氧樹脂組成物係可容易地操作，而且具有特別優異的熱應答性。 At this time, the epoxy compound represented by the above formula (3) has low viscosity and particularly excellent heat responsiveness. Therefore, the epoxy resin composition containing an epoxy compound can be easily handled, and has particularly excellent heat responsiveness.
上述環氧樹脂亦可含有上述環氧化合物以外之環氧樹脂。 The epoxy resin may also contain an epoxy resin other than the above epoxy compound.
作為如此的環氧樹脂，例如可舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、脂環式環氧樹脂、乙內醯脲型環氧樹脂、氫化雙酚A型環氧樹脂、脂肪族系環氧樹脂、環氧丙基醚型環氧樹脂、聯苯基型環氧樹脂、二環環型環氧樹脂、萘型環氧樹脂等。 Examples of such an epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, and cresol novolak type epoxy resin. Resin, alicyclic epoxy resin, intramethylene urea resin, hydrogenated bisphenol A epoxy resin, aliphatic epoxy resin, epoxy propyl ether epoxy resin, biphenyl epoxy Resin, bicyclic ring type epoxy resin, naphthalene type epoxy resin, and the like.
此等樹脂係可單獨1種類使用，也可併用2種類以 上。 These resins may be used alone or in combination of two types. on.
上述環氧樹脂中的上述環氧化合物之含有率較佳為30.0質量%以上，更佳為60.0質量%以上。 The content of the epoxy compound in the epoxy resin is preferably 30.0% by mass or more, and more preferably 60.0% by mass or more.
上述環氧樹脂中的上述環氧化合物之含有率更佳為90.0質量%以上。 The content of the epoxy compound in the epoxy resin is more preferably 90.0% by mass or more.
此時，與上述環氧樹脂中的上述環氧化合物之含有率未達90.0質量%時相比，環氧樹脂組成物係可形成具有更優異的耐光性之硬化物。 In this case, the epoxy resin composition can form a cured product having more excellent light resistance than when the content of the epoxy compound in the epoxy resin is less than 90.0% by mass.
如上述，本發明的環氧樹脂組成物係含有硬化劑。上述硬化劑只要是可與環氧樹脂反應而形成硬化物，則沒有特別的限制，可由通常使用的硬化劑中適宜選擇而使用。例如，可使用酸酐、苯酚、甲酚、二甲苯酚、間苯二酚等與甲醛縮合反應而得之酚醛清漆型酚樹脂、液狀聚硫醇或多硫化物等之聚巰基樹脂或醯胺、胺系的硬化劑，以及丙烯酸酯、碳酸酯或異氰酸酯等。於此等之中，從耐光性之觀點來看，較佳為非芳香族系之不具有乙烯性不飽和鍵的化合物。具體地，例如可舉出六氫苯二甲酸酐、甲基六氫苯二甲酸酐、三烷基四氫苯二甲酸酐、氫化甲基納狄克酸酐等之酸酐系硬化劑。於此等酸酐系硬化劑之中，更佳為甲基六氫苯二甲酸酐。硬化劑係可單獨使用1種類，也可併用2種類以上。 As described above, the epoxy resin composition of the present invention contains a curing agent. The curing agent is not particularly limited as long as it can react with an epoxy resin to form a cured product, and can be suitably selected from the commonly used curing agents. For example, a polyphenol-based resin or a decylamine such as a novolac type phenol resin, a liquid polythiol or a polysulfide obtained by condensation reaction with formaldehyde such as an acid anhydride, phenol, cresol, xylenol or resorcin can be used. An amine-based hardener, and an acrylate, carbonate or isocyanate. Among these, from the viewpoint of light resistance, a non-aromatic compound having no ethylenically unsaturated bond is preferred. Specifically, for example, an acid anhydride-based curing agent such as hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride or hydrogenated methylnadic anhydride may be mentioned. Among these acid anhydride hardeners, methyl hexahydrophthalic anhydride is more preferable. The curing agent may be used alone or in combination of two or more.
硬化劑之含量，例如可為相對於上述環氧化合物之環 氧基1莫耳，使酸酐基或活性氫等反應性基之莫耳數成為0.4莫耳~2.0莫耳之含量。反應性基之莫耳數較佳為0.6莫耳~2.0莫耳，更佳為0.8莫耳~1.6莫耳。藉由使上述莫耳數成為0.4莫耳以上，而得到良好的硬化性，可靠性升高。又，藉由使上述莫耳數成為2.0莫耳以下，可抑制未反應硬化劑殘留在硬化物中者，進一步提高所得之硬化物的耐濕性。 The content of the hardener may be, for example, a ring relative to the above epoxy compound The oxygen group is 1 mol, and the molar number of the reactive group such as an acid anhydride group or an active hydrogen is 0.4 mol to 2.0 mol. The molar number of the reactive groups is preferably from 0.6 moles to 2.0 moles, more preferably from 0.8 moles to 1.6 moles. By setting the above molar number to 0.4 mol or more, good hardenability is obtained, and reliability is improved. Further, by setting the number of moles to 2.0 mol or less, it is possible to suppress the residual unreacted curing agent from remaining in the cured product, and to further improve the moisture resistance of the obtained cured product.
又，本發明的環氧樹脂組成物視需要亦可更含有硬化促進劑、無機填充劑、表面調整劑及抗氧化劑中的至少1種。 Moreover, the epoxy resin composition of the present invention may further contain at least one of a curing accelerator, an inorganic filler, a surface conditioner, and an antioxidant, as needed.
作為上述硬化促進劑，可無特別限制地使用作為環氧樹脂之硬化促進劑所通常使用之化合物。具體地，可舉出咪唑類、四級銨鹽類、磷化合物類、胺類、膦類、鏻鹽類、雙環式脒類及彼等之鹽類等。此等係可單獨1種類使用，也可併用2種類以上。 As the curing accelerator, a compound which is generally used as a curing accelerator for an epoxy resin can be used without particular limitation. Specific examples thereof include imidazoles, quaternary ammonium salts, phosphorus compounds, amines, phosphines, phosphonium salts, bicyclic guanidines, and the like. These may be used alone or in combination of two or more types.
更具體地，若使用2-甲基咪唑、2-苯基-4-咪唑等之咪唑類、2-苯基咪唑異三聚氰酸加成物等之咪唑鹽類、1,8-二氮雜雙環[5,4,0]十一烯-7等之雙環式脒類、1,8-二氮雜雙環[5,4,0]十一烯-7之辛酸鹽等之雙環式脒的羧酸鹽類、及溴化四苯基鏻等之鏻鹽類，則由於硬化性優異，抑制著色而更佳。硬化促進劑之添加量，相對於上述環氧化合物100質量份，較佳為0.1~10質量份。 More specifically, an imidazole salt such as 2-methylimidazole or 2-phenyl-4-imidazole, an imidazolium salt such as a 2-phenylimidazole iso-cyanuric acid addition product, or 1,8-diaza is used. Bicyclic anthracene of heterobicyclo[5,4,0]undecene-7, bicyclic anthracene of 1,8-diazabicyclo[5,4,0]undecene-7, etc. The onium salts such as a carboxylate or a tetraphenylphosphonium bromide are excellent in curability and are more preferably suppressed from coloring. The amount of the curing accelerator added is preferably 0.1 to 10 parts by mass based on 100 parts by mass of the epoxy compound.
無機填充劑之形狀係沒有特別的限制，可為纖維狀或板狀或粉狀。 The shape of the inorganic filler is not particularly limited and may be fibrous or plate-like or powdery.
作為纖維狀無機填充劑，可舉出玻璃纖維、石綿纖維、矽石纖維、矽石．鋁纖維、氧化鋁纖維、氧化鋯纖維、氮化硼纖維、硼纖維、鈦酸鉀纖維等。 Examples of the fibrous inorganic filler include glass fiber, asbestos fiber, vermiculite fiber, and vermiculite. Aluminum fiber, alumina fiber, zirconia fiber, boron nitride fiber, boron fiber, potassium titanate fiber, and the like.
又，作為粉狀無機填充劑，可舉出矽石、石英粉末、玻璃珠、玻璃粉、矽酸鈣、矽酸鋁、高嶺土、滑石、黏土、矽藻土、矽灰石等之矽酸鹽、氧化鐵、氧化鈦、氧化鋅、三氧化銻、氧化鋁等之金屬的氧化物、碳酸鈣、碳酸鎂等之金屬的碳酸鹽、硫酸鈣、硫酸鋇等之金屬的硫酸鹽，以及肥粒鐵、碳化矽、氮化矽、氮化硼、氮化鋁等。 Further, examples of the powdery inorganic filler include vermiculite, quartz powder, glass beads, glass powder, calcium silicate, aluminum silicate, kaolin, talc, clay, diatomaceous earth, and strontium silicate. An oxide of a metal such as iron oxide, titanium oxide, zinc oxide, antimony trioxide or aluminum oxide, a metal carbonate such as calcium carbonate or magnesium carbonate, a sulfate of a metal such as calcium sulfate or barium sulfate, and a fertilizer Iron, tantalum carbide, tantalum nitride, boron nitride, aluminum nitride, and the like.
另外，作為板狀無機填充劑，可舉出雲母、玻璃碎片等。此等的無機填充劑係可單獨1種類使用，也可併用2種類以上。 Further, examples of the plate-like inorganic filler include mica and glass cullet. These inorganic fillers may be used alone or in combination of two or more.
無機填充劑之顏色係沒有特別的限制，但從耐光性與高反射率之觀點來看，較佳為白色的無機填充劑。例如，作為白色的無機填充劑，可舉出氧化鈦、氧化鋅、矽石、石英粉末、滑石、碳酸鈣、碳酸鎂、硫酸鈣、硫酸鋇、雲母、氧化鋁等。 The color of the inorganic filler is not particularly limited, but a white inorganic filler is preferred from the viewpoint of light resistance and high reflectance. For example, examples of the white inorganic filler include titanium oxide, zinc oxide, vermiculite, quartz powder, talc, calcium carbonate, magnesium carbonate, calcium sulfate, barium sulfate, mica, and alumina.
其中，無機填充劑更佳為選自由氧化鈦、矽石及氧化鋁所成之群組中的至少1種。 Among them, the inorganic filler is more preferably at least one selected from the group consisting of titanium oxide, vermiculite, and alumina.
無機填充劑的體積平均粒徑係沒有特別的限制。從環 氧樹脂組成物之成形性、流動性之觀點來看，體積平均粒徑較佳為0.5μm~40μm，特佳為1μm~35μm。再者，於將上述環氧樹脂組成物罐封或底填時，為了高流動化，亦較佳為組合體積平均粒徑在未達1μm之微細範圍的粒子、在1μm以上且未達10μm的中粒徑範圍之粒子以及在10~40μm之粗範圍的粒子而使用。 The volume average particle diameter of the inorganic filler is not particularly limited. From the ring The volume average particle diameter of the oxygen resin composition is preferably from 0.5 μm to 40 μm, particularly preferably from 1 μm to 35 μm, from the viewpoint of moldability and fluidity. Further, when the epoxy resin composition is potted or underfilled, it is preferable to combine particles having a volume average particle diameter of less than 1 μm in a fine range of 1 μm or more and less than 10 μm in order to increase fluidity. The particles in the medium particle size range and the particles in the coarse range of 10 to 40 μm are used.
尚且，無機填充劑之體積平均粒徑係可使用雷射繞射散射粒度分布測定裝置來測定。 Further, the volume average particle diameter of the inorganic filler can be measured using a laser diffraction scattering particle size distribution measuring apparatus.
環氧樹脂組成物中所含有的無機填充劑之含有率，係可按照目的來適宜選擇。從耐光性與高反射率之觀點來看，無機填充劑之含有率，相對於環氧樹脂組成物之總質量，較佳為97質量%~50質量%，更佳為95質量%~75質量%。 The content ratio of the inorganic filler contained in the epoxy resin composition can be appropriately selected according to the purpose. From the viewpoint of light resistance and high reflectance, the content of the inorganic filler is preferably from 97% by mass to 50% by mass, more preferably from 95% by mass to 75% by mass based on the total mass of the epoxy resin composition. %.
本發明的環氧樹脂組成物係藉由含有矽烷偶合劑等的表面調整劑，而提高環氧樹脂與無機填充劑之界面黏著力，提高將環氧樹脂組成物硬化所得之硬化物的機械強度。 The epoxy resin composition of the present invention improves the interfacial adhesion between the epoxy resin and the inorganic filler by a surface conditioning agent containing a decane coupling agent or the like, and improves the mechanical strength of the cured product obtained by hardening the epoxy resin composition. .
例如，作為矽烷偶合劑，可舉出γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷等之環氧官能性烷氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧 基矽烷等之胺基官能製性烷氧基矽烷、γ-巰基丙基三甲氧基矽烷等之巰基官能性烷氧基矽烷等。尚且，表面調整劑亦可用在上述無機填充劑之表面處理。 For example, as the decane coupling agent, γ-glycidoxypropyltrimethoxydecane, γ-glycidoxypropylmethyldiethoxydecane, and β-(3,4-epoxy) may be mentioned. Epoxy-functional alkoxydecane, N-β-(aminoethyl)-γ-aminopropyltrimethoxydecane, γ-aminopropyltriyl, etc., such as cyclohexyl)ethyltrimethoxydecane Ethoxy decane, N-phenyl-γ-aminopropyltrimethoxy A mercapto-functional alkoxydecane such as an amino group-functional alkoxydecane or a γ-mercaptopropyltrimethoxydecane. Further, the surface conditioner may be used for the surface treatment of the above inorganic filler.
作為上述抗氧化劑，可使用苯酚抗氧化劑、磷系抗氧化劑、硫系抗氧化劑。作為抗氧化劑之具體例，可舉出如以下的抗氧化劑。 As the above antioxidant, a phenol antioxidant, a phosphorus-based antioxidant, or a sulfur-based antioxidant can be used. Specific examples of the antioxidant include the following antioxidants.
作為苯酚抗氧化劑，可舉出2,6-二第三丁基對甲酚、丁基化羥基茴香醚、2,6-二第三丁基-p-乙基苯酚、硬脂基-β-(3,5-二第三丁基-4-羥基苯基)丙酸酯、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚、4,4’-伸丁基雙(3-甲基-6-第三丁基苯酚)、3,9-雙[1,1-二甲基-2-(β-(3-第三丁基-4-羥基-5-甲基苯基)丙醯氧基)乙基]2,4,8,10-四氧雜螺[5,5]十一烷、1,1,3-三(2-甲基-4-羥基-5-第三丁基苯基)丁烷、1,3,5-三甲基-2,4,6-三(3,5-二第三丁基-4-羥基苄基)苯等。 Examples of the phenol antioxidant include 2,6-di-t-butyl-p-cresol, butylated hydroxyanisole, 2,6-di-t-butyl-p-ethylphenol, and stearyl-β-. (3,5-di-t-butyl-4-hydroxyphenyl)propionate, 2,2'-methylenebis(4-methyl-6-tert-butylphenol, 4,4'-stretch Butyl bis(3-methyl-6-tert-butylphenol), 3,9-bis[1,1-dimethyl-2-(β-(3-tert-butyl-4-hydroxy-5) -Methylphenyl)propenyloxy)ethyl]2,4,8,10-tetraoxaspiro[5,5]undecane, 1,1,3-tris(2-methyl-4- Hydroxy-5-t-butylphenyl)butane, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, etc. .
作為磷系抗氧化劑，可舉出亞磷酸三苯酯、亞磷酸二苯基烷酯、亞磷酸苯基二烷酯、亞磷酸三(壬基苯基)酯、亞磷酸三月桂酯、亞磷酸三個十八酯、亞磷酸三苯酯、二硬脂基季戊四醇二亞磷酸酯、三(2,4-二第三丁基苯基)亞磷酸酯、二異癸基季戊四醇二亞磷酸酯、雙(2,4-二第三丁基苯基)季戊四醇二亞磷酸酯、三硬脂基山梨糖醇三亞磷酸酯及四(2,4-二第三丁基苯基)-4,4’-聯 苯基二磷酸酯等。 Examples of the phosphorus-based antioxidant include triphenyl phosphite, diphenyl alkyl phosphite, phenyl dialkyl phosphite, tris(nonylphenyl) phosphite, trilauryl phosphite, and phosphorous acid. Three octadecyl esters, triphenyl phosphite, distearyl pentaerythritol diphosphite, tris(2,4-di-t-butylphenyl) phosphite, diisodecyl pentaerythritol diphosphite, Bis(2,4-di-t-butylphenyl)pentaerythritol diphosphite, tristearyl sorbitol triphosphite and tetrakis(2,4-di-t-butylphenyl)-4,4' -Link Phenyl diphosphate and the like.
又，作為硫系抗氧化劑，可舉出二月桂基-3,3’-硫代二丙酸酯、二肉豆蔻基-3,3’-硫代二丙酸酯、二硬脂基-3,3’-硫代二丙酸酯等。 Further, examples of the sulfur-based antioxidant include dilauryl-3,3'-thiodipropionate, dimyristyl-3,3'-thiodipropionate, and distearyl-3. , 3'-thiodipropionate, and the like.
此等的抗氧化劑係可各自單獨1種類或組合2種類以上使用。 These antioxidants can be used alone or in combination of two or more.
抗氧化劑之含有率係在環氧樹脂組成物中較佳為0.01質量%~10質量%，特佳為0.03質量%~5質量%。抗氧化劑之含有率若為0.01質量%以上，則得到更良好的耐熱性，具有可更有效果地抑制變色之傾向。又，抗氧化劑之含有率若為10質量%以下，則抑制硬化障礙，有能得到充分的硬化性、強度之傾向。 The content of the antioxidant is preferably 0.01% by mass to 10% by mass, particularly preferably 0.03% by mass to 5% by mass, based on the epoxy resin composition. When the content of the antioxidant is 0.01% by mass or more, more excellent heat resistance is obtained, and the discoloration tends to be more effectively suppressed. In addition, when the content of the antioxidant is 10% by mass or less, the curing failure is suppressed, and sufficient curability and strength tend to be obtained.
又，以將特性改質等為目的，環氧樹脂組成物視需要亦可含有環氧樹脂以外之熱硬化性樹脂。作為如此的熱硬化性樹脂，例如可舉出氰酸酯樹脂、苯酚樹脂、聚醯亞胺樹脂、胺基甲酸乙酯樹脂、雙馬來醯亞胺樹脂等。 In addition, for the purpose of modifying the properties, the epoxy resin composition may contain a thermosetting resin other than the epoxy resin as needed. Examples of such a thermosetting resin include a cyanate resin, a phenol resin, a polyimide resin, a urethane resin, and a bismaleimide resin.
另外，本發明的環氧樹脂組成物視需要亦可含有防變色劑、防劣化劑、脫模劑、可塑劑或稀釋劑等之各種添加劑。 Further, the epoxy resin composition of the present invention may contain various additives such as an anti-tarnishing agent, an anti-deterioration agent, a releasing agent, a plasticizer or a diluent, as needed.
環氧樹脂組成物之製造方法係沒有特別的限定，可自 作為環氧樹脂組成物之製造方法所通常使用的製造方法中適宜選擇使用。具體地，例如可將上述環氧樹脂溶解於有機溶劑中，將硬化劑及視需要的硬化促進劑加到有機溶劑中，更且於此有機溶劑中添加無機填充劑、環氧樹脂以外之熱硬化性樹脂等及混合而製造。 The method for producing the epoxy resin composition is not particularly limited, and may be It is suitably selected and used as a manufacturing method generally used for the manufacturing method of an epoxy resin composition. Specifically, for example, the above epoxy resin may be dissolved in an organic solvent, a hardener and an optional hardening accelerator may be added to the organic solvent, and an inorganic filler or an epoxy resin may be added to the organic solvent. It is produced by mixing a curable resin or the like.
又，藉由混合器等將上述環氧樹脂、硬化劑及視需要添加的硬化促進劑、無機填充劑等充分混合直到均勻後，進行熱輥、捏合機、擠壓機等所致的熔融混合處理，接著使所得之混合物冷卻固化，粉碎成適當的大小，亦可製造環氧樹脂組成物。 In addition, the epoxy resin, the curing agent, and, if necessary, a curing accelerator, an inorganic filler, and the like are sufficiently mixed by a mixer or the like until uniform, and then melt-mixed by a heat roll, a kneader, an extruder, or the like. After the treatment, the resulting mixture is cooled and solidified, pulverized to an appropriate size, and an epoxy resin composition can also be produced.
本發明的硬化物係藉由將上述環氧樹脂組成物予以熱硬化而得者。 The cured product of the present invention is obtained by thermally curing the above epoxy resin composition.
依照本發明之硬化物，可具有優異的耐光性。 The cured product according to the present invention can have excellent light resistance.
本發明的光半導體裝置具備光半導體元件與將光半導體元件固定之光半導體元件封裝，其中光半導體元件封裝含有上述硬化物。 An optical semiconductor device according to the present invention includes an optical semiconductor element package and an optical semiconductor element package in which the optical semiconductor element is fixed, wherein the optical semiconductor element package contains the cured product.
依照本發明的光半導體裝置，自光半導體元件所出射之光，即使照射於光半導體元件封裝，也由於光半導體元件封裝含有具有優異的耐光性之上述硬化物，而光半導體裝置的長壽命化係成為可能。 According to the optical semiconductor device of the present invention, even when the light emitted from the optical semiconductor element is applied to the optical semiconductor element package, the optical semiconductor element package contains the cured product having excellent light resistance, and the optical semiconductor device has a long life. It is possible.
所謂的光半導體元件，係藉由在同一面或相異面上形成有正負電極的半導體層之積層體所構成之元件。作為光半導體元件，例如可舉出發光元件、發光二極體、雷射二極體、光電晶體、光二極體等。 The optical semiconductor element is an element formed of a laminate of semiconductor layers having positive and negative electrodes formed on the same or different surfaces. Examples of the optical semiconductor element include a light-emitting element, a light-emitting diode, a laser diode, a photoelectric crystal, and a photodiode.
所謂的光半導體元件封裝，就是將光半導體元件固定者。光半導體元件封裝係至少具有將光半導體元件支持固定用之構件。光半導體元件封裝亦可更含有將光半導體元件保護用之構件、使由光半導體元件所出來的光反射用之構件。 The so-called optical semiconductor component package is to fix the optical semiconductor component. The optical semiconductor element package has at least a member for supporting and fixing the optical semiconductor element. The optical semiconductor element package may further include a member for protecting the optical semiconductor element and a member for reflecting light emitted from the optical semiconductor element.
又，光半導體元件封裝之形狀係沒有特別的限制，可為具有搭載光半導體元件用之凹部的形狀，也可為平板狀或環狀。 Moreover, the shape of the optical semiconductor element package is not particularly limited, and may have a shape in which a concave portion for an optical semiconductor element is mounted, and may have a flat shape or a ring shape.
此處，對於本發明的光半導體裝置之一實施形態，使用圖1來具體說明。圖1係顯示本發明的光半導體裝置之一實施形態的截面圖。 Here, an embodiment of the optical semiconductor device of the present invention will be specifically described using FIG. 1 . Fig. 1 is a cross-sectional view showing an embodiment of an optical semiconductor device of the present invention.
如圖1中所示，光半導體裝置100具備：光半導體元件10，與將光半導體元件10固定之光半導體元件封裝20。 As shown in FIG. 1, the optical semiconductor device 100 includes an optical semiconductor element 10 and an optical semiconductor element package 20 that fixes the optical semiconductor element 10.
於本實施形態中，光半導體元件封裝20具有：具有凹部30a的搭載光半導體元件10之元件搭載部30，與填 充於元件搭載部30之凹部30a的密封部40。元件搭載部30係由以下所構成：將光半導體元件10支持固定用之元件固定部31；與，設置於元件固定部31上，包圍光半導體元件10，將自光半導體元件10所出射的光予以反射之光反射部32。元件固定部31具有：連接於光半導體元件10中所含有的2個電極中的一個電極之第1引線31a；經由接合線等的導電構件50而連接於光半導體元件10中所含有的2個電極中的另一個電極之第2引線31b；與，將第1引線31a與第2引線31b絕緣之絕緣部31c。凹部30a係由元件固定部31與光反射部32之內周面所形成。 In the present embodiment, the optical semiconductor element package 20 includes the element mounting portion 30 on which the optical semiconductor element 10 is mounted, and has a recess 30a. The sealing portion 40 is filled in the recess 30a of the component mounting portion 30. The element mounting portion 30 is configured to support the element fixing portion 31 for fixing the optical semiconductor element 10, and to be disposed on the element fixing portion 31 to surround the optical semiconductor element 10 and to emit light from the optical semiconductor element 10. The light reflecting portion 32 that is reflected. The element fixing portion 31 has a first lead 31a connected to one of the two electrodes included in the optical semiconductor element 10, and is connected to two of the optical semiconductor elements 10 via a conductive member 50 such as a bonding wire. The second lead 31b of the other electrode of the electrode; and the insulating portion 31c that insulates the first lead 31a and the second lead 31b. The recess 30a is formed by the inner peripheral surface of the element fixing portion 31 and the light reflecting portion 32.
於光半導體裝置100的光半導體元件封裝20之中，光反射部32、絕緣部31c及密封部40的至少1個係由將上述環氧樹脂組成物熱硬化而得之硬化物所構成。於此，較佳為至少光反射部32係由將環氧樹脂組成物熱硬化而得之硬化物所構成。此係根據以下的理由。即，光反射部32之內周面係將自光半導體元件10所出射的光予以反射者，此內周面的光之反射率係對光半導體裝置100之亮度造成影響。於此點，光反射部32若由將環氧樹脂組成物熱硬化而得之硬化物所構成，則由於光反射部32係耐光性優異，可在內周面維持高的光反射率。因此，可充分抑制光半導體裝置100之亮度的降低。 In the optical semiconductor device package 20 of the optical semiconductor device 100, at least one of the light reflecting portion 32, the insulating portion 31c, and the sealing portion 40 is made of a cured product obtained by thermally curing the epoxy resin composition. Here, it is preferable that at least the light reflecting portion 32 is made of a cured product obtained by thermally curing an epoxy resin composition. This is based on the following reasons. In other words, the inner peripheral surface of the light reflecting portion 32 reflects the light emitted from the optical semiconductor element 10, and the reflectance of the light on the inner peripheral surface affects the brightness of the optical semiconductor device 100. In this case, when the light-reflecting portion 32 is formed of a cured product obtained by thermally curing the epoxy resin composition, the light-reflecting portion 32 is excellent in light resistance, and can maintain a high light reflectance on the inner peripheral surface. Therefore, the decrease in the luminance of the optical semiconductor device 100 can be sufficiently suppressed.
光半導體裝置係可藉由光半導體元件封裝固定於光半 導體元件而得。 The optical semiconductor device can be fixed to the light half by an optical semiconductor component package Derived from the conductor element.
光半導體元件封裝係可使用成形法獲得。作為將光半導體元件封裝成形之方法，可自通常使用的成形方法中適宜選擇。例如，較宜使用將上述環氧樹脂組成物射出成形或轉移成形，加熱、加壓處理以使硬化，而得到光半導體元件封裝之方法。加熱處理及加壓處理的條件係沒有特別的限制，可按照環氧樹脂組成物之構成來適宜選擇。例如加熱處理及加壓處理之條件，係可溫度為100℃~200℃，加壓時的壓力為0.1MPa~10MPa，加熱及加壓處理所需要的時間為0.5分鐘~30分鐘之條件。尚且，本發明的環氧樹脂組成物例如亦可在150℃~200℃之溫度，較佳在170℃~190℃之溫度使硬化。 The optical semiconductor element package can be obtained using a forming method. As a method of forming the optical semiconductor element package, it can be suitably selected from a molding method which is generally used. For example, a method in which the above epoxy resin composition is injection molded or transferred, and heated and pressurized to be hardened to obtain an optical semiconductor element package is preferably used. The conditions of the heat treatment and the pressure treatment are not particularly limited, and may be appropriately selected in accordance with the constitution of the epoxy resin composition. For example, the conditions of the heat treatment and the pressure treatment may be such that the temperature is from 100 ° C to 200 ° C, the pressure at the time of pressurization is from 0.1 MPa to 10 MPa, and the time required for the heat and pressure treatment is from 0.5 minutes to 30 minutes. Further, the epoxy resin composition of the present invention may be cured, for example, at a temperature of from 150 ° C to 200 ° C, preferably from 170 ° C to 190 ° C.
上述環氧樹脂組成物係在藉由如上述的各種方法而成形後，視需要亦可進行後硬化(after cure)。 The epoxy resin composition is formed by various methods as described above, and may be post-cured as needed.
以下，藉由實施例來更具體說明本發明，惟本發明不受此等實施例所限定。尚且，只要沒有特別預先指明，則「份」意味「質量份」。 Hereinafter, the present invention will be more specifically illustrated by the examples, but the present invention is not limited by the examples. In addition, "parts" means "parts by mass" unless otherwise specified.
於具備攪拌機、溫度計及滴液漏斗之2,000mL三口燒瓶中，加入氰尿醯氯(ALDRICH公司製)110g與作為溶劑的氯仿600mL，邊保持在3℃邊添加縮水甘油(關東化 學公司製)222g。然後，以反應溫度為10℃，費6小時滴下50%氫氧化鈉水溶液176g，再進行1小時反應。於反應物中添加水400mL以去除過剩的氫氧化鈉，用硫酸鎂將有機成分脫水處理。過濾分離硫酸鎂後，藉由減壓濃縮而得到白色固體。藉由以冷甲醇400mL洗淨此2次，而得到120g 2,4,6-三(環氧丙氧基)-1,3,5-三(收率68%、環氧當量100g/eq)。環氧當量係依據JIS K-7236求得。 Into a 2,000-mL three-necked flask equipped with a stirrer, a thermometer, and a dropping funnel, 110 g of cyanuric chloride (manufactured by ALDRICH Co., Ltd.) and 600 mL of chloroform as a solvent were added, and glycidol (manufactured by Kanto Chemical Co., Ltd.) was added at 222 g while maintaining the temperature at 3 °C. . Then, 176 g of a 50% aqueous sodium hydroxide solution was added dropwise at a reaction temperature of 10 ° C for 6 hours, and the reaction was further carried out for 1 hour. 400 mL of water was added to the reaction to remove excess sodium hydroxide, and the organic component was dehydrated with magnesium sulfate. After separating the magnesium sulfate by filtration, it was concentrated under reduced pressure to give a white solid. By washing this twice with 400 mL of cold methanol, 120 g of 2,4,6-tris(epoxypropoxy)-1,3,5-three were obtained. (Yield 68%, epoxy equivalent 100 g/eq). The epoxy equivalent is determined in accordance with JIS K-7236.
以下述所示的環氧樹脂、硬化劑、硬化促進劑與無機填充劑成為表1中所示的組成之方式摻合，於50℃~60℃進行10分鐘輥混煉，而得到實施例1~3及比較例1~4之環氧樹脂組成物。再者，表1的樹脂組成中記載之數值的單位為質量份。 The epoxy resin, the curing agent, the hardening accelerator and the inorganic filler shown below were blended in such a manner as to have the composition shown in Table 1, and the mixture was kneaded at 50 ° C to 60 ° C for 10 minutes to obtain Example 1 ~3 and epoxy resin compositions of Comparative Examples 1-4. In addition, the unit of the numerical value described in the resin composition of Table 1 is a mass part.
．TGC[2,4,6-三(環氧丙氧基)-1,3,5-三，上述合成品] . TGC[2,4,6-tris(epoxypropoxy)-1,3,5-three , the above synthetic products]
．TEPLC[1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-三酮，日產化學公司製] . TEPLC[1,3,5-tris(2,3-epoxypropyl)-1,3,5-three -2,4,6-trione, manufactured by Nissan Chemical Co., Ltd.]
．Celloxide 2021P[3,4-環氧基環己基甲基(3,p)4-環氧基]環己烷羧酸酯，DAICEL化學公司製] . Celloxide 2021P [3,4-epoxycyclohexylmethyl(3,p)4-epoxy]cyclohexanecarboxylate, manufactured by DAICEL Chemical Co., Ltd.]
甲基六氫苯二甲酸酐[Rikacid MH，新日本理化公司製] Methyl hexahydrophthalic anhydride [Rikacid MH, manufactured by Nippon Chemical and Chemical Co., Ltd.]
1,8-二氮雜雙環[5.4.0]十一烯-7[Hisilcone PX-4ET，日本化學工業公司製] 1,8-diazabicyclo[5.4.0]undecene-7 [Hisilcone PX-4ET, manufactured by Nippon Chemical Industry Co., Ltd.]
．氧化鋁[AO-802，ADOMATECHS公司製，平均粒徑0.7μm] . Alumina [AO-802, manufactured by ADOMATECHS, with an average particle size of 0.7 μm]
．矽石A[FB-304，電氣化學工業公司製，平均粒徑6μm] . Meteorite A [FB-304, made by Electric Chemical Industry Co., Ltd., average particle size 6 μm]
．矽石B[HS-202，MICRON公司製，平均粒徑16μm] .矽石B[HS-202, manufactured by MICRON, average particle size 16μm]
．氧化鈦[CR-90-2，石原產業公司製，平均粒徑0.3μm] . Titanium oxide [CR-90-2, manufactured by Ishihara Sangyo Co., Ltd., average particle size 0.3 μm]
．硼矽酸玻璃[Glassbubbles S60HS，住友3M公司製，平均粒徑30μm] . Boric acid glass [Glassbubbles S60HS, manufactured by Sumitomo 3M, average particle size 30μm]
實施例1~3及比較例1~4所得之環氧樹脂組成物的硬化開始溫度，係差示掃描熱量測定(DSC3100SA Bruker AXS公司製)中的放熱開始溫度。表1中顯示結果。 The curing initiation temperature of the epoxy resin compositions obtained in Examples 1 to 3 and Comparative Examples 1 to 4 was the exothermic onset temperature in the differential scanning calorimetry (DSC3100SA Bruker AXS). The results are shown in Table 1.
將實施例1~3及比較例1~4所得之環氧樹脂組成物，在模具溫度180℃、壓力0.16MPa，以硬化時間2分鐘加熱、加壓處理，製作由硬化物所成之厚度1mm的板狀試驗片。尚且，實施例1~3及比較例1~4的板狀試驗片之熔融黏度，係作為其原料使用的環氧樹脂組成物之熔融黏度的100~100,000倍。 The epoxy resin compositions obtained in Examples 1 to 3 and Comparative Examples 1 to 4 were heated and pressure-treated at a mold temperature of 180 ° C and a pressure of 0.16 MPa for 2 minutes, and a thickness of 1 mm made of a cured product was prepared. Plate test piece. In addition, the melt viscosity of the plate-like test pieces of Examples 1 to 3 and Comparative Examples 1 to 4 was 100 to 100,000 times the melt viscosity of the epoxy resin composition used as the raw material.
然後，對於各試驗片，使用分光光度計(U4000型，日立製作所公司製)，測定各試驗片在波長460nm的光反射率。 Then, for each test piece, a light reflectance of each test piece at a wavelength of 460 nm was measured using a spectrophotometer (U4000 type, manufactured by Hitachi, Ltd.).
其次，對於各試驗片，使用耐光性試驗機(Metal Weather KW-R5TP-A，DAIPLA WINTES公司製)，於照射強度850W/cm2、溫度83℃、濕度20%RH之不結露的條件下，試驗100、150、200、250小時。然後，對於各試驗片，與上述同樣地測定在波長460nm的光反射率。 Next, using a light resistance tester (Metal Weather KW-R5TP-A, manufactured by DAIPLA WINTES Co., Ltd.) for each test piece, under the conditions of no radiation condensation at an irradiation intensity of 850 W/cm 2 , a temperature of 83 ° C, and a humidity of 20% RH, Test 100, 150, 200, 250 hours. Then, for each test piece, the light reflectance at a wavelength of 460 nm was measured in the same manner as described above.
表1中顯示上述光反射率之結果。尚且，各試驗片的光反射率係以聚四氟乙烯之光反射率作為100%之相對值。又，表1中顯示根據以下基準的光反射率之結果。 The results of the above light reflectance are shown in Table 1. Further, the light reflectance of each test piece was a relative value of 100% of the light reflectance of polytetrafluoroethylene. Further, Table 1 shows the results of light reflectance according to the following criteria.
A：光反射率為90%以上 A: The light reflectance is 90% or more
B：光反射率為80%以上且未達90% B: The light reflectance is 80% or more and less than 90%
C：光反射率為70%以上且未達80% C: The light reflectance is 70% or more and less than 80%
D：光反射率未達70% D: light reflectance is less than 70%
此處，將250小時試驗後的試驗片之光反射率的結果為A者當作在耐光性之點合格，將光反射率的結果為B、C或D者當作在耐光性之點不合格。 Here, the result of the light reflectance of the test piece after the 250-hour test is regarded as A at the point of light resistance, and the result of light reflectance being B, C or D is regarded as not at the point of light resistance. qualified.
由表1中所示的結果，可知本發明的環氧樹脂組成物係可形成在耐光性試驗後亦能維持高的光反射率之硬化物。即，可知本發明的環氧樹脂組成物係可形成耐光性優異之硬化物。 From the results shown in Table 1, it is understood that the epoxy resin composition of the present invention can form a cured product which can maintain a high light reflectance even after the light resistance test. That is, it is understood that the epoxy resin composition of the present invention can form a cured product excellent in light resistance.
10‧‧‧光半導體元件 10‧‧‧Optical semiconductor components
20‧‧‧光半導體元件封裝 20‧‧‧Optical semiconductor component package
100‧‧‧光半導體裝置 100‧‧‧Optical semiconductor devices
30‧‧‧搭載部 30‧‧‧Loading Department
30a‧‧‧凹部 30a‧‧‧ recess
31‧‧‧元件固定部 31‧‧‧Component fixing department
31a‧‧‧第1引線 31a‧‧‧1st lead
31b‧‧‧第2引線 31b‧‧‧2nd lead
31c‧‧‧絕緣部 31c‧‧‧Insulation
32‧‧‧光反射部 32‧‧‧Light Reflecting Department
40‧‧‧密封部 40‧‧‧ Sealing Department
50‧‧‧導電構件 50‧‧‧Electrical components
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| CN (1) | CN103974992A (en) |
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| JP2015093904A (en) * | 2013-11-11 | 2015-05-18 | 日本カーバイド工業株式会社 | Thermosetting composition |
| JP6511772B2 (en) * | 2014-10-29 | 2019-05-15 | 東洋インキＳｃホールディングス株式会社 | Thermosetting composition |
| JP7095239B2 (en) * | 2017-07-28 | 2022-07-05 | 昭和電工マテリアルズ株式会社 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element and its manufacturing method, and optical semiconductor device |
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| US2741607A (en) * | 1954-02-23 | 1956-04-10 | Shell Dev | Triglycidyl cyanurate and polymers thereof |
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| US4461879A (en) * | 1982-05-10 | 1984-07-24 | Shell Oil Company | Curable saturated polyepoxide-triglycidyl cyanurate compositions |
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