TW201340812A - Planar electronic device and method for manufacturing - Google Patents

Planar electronic device and method for manufacturing Download PDF

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Publication number
TW201340812A
TW201340812A TW102106853A TW102106853A TW201340812A TW 201340812 A TW201340812 A TW 201340812A TW 102106853 A TW102106853 A TW 102106853A TW 102106853 A TW102106853 A TW 102106853A TW 201340812 A TW201340812 A TW 201340812A
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Taiwan
Prior art keywords
base layer
layer
dielectric
cover
hole
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TW102106853A
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Chinese (zh)
Inventor
Sidharth Dalmia
William Lee Harrison
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Tyco Electronics Corp
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Priority claimed from US13/407,161 external-priority patent/US9440378B2/en
Application filed by Tyco Electronics Corp filed Critical Tyco Electronics Corp
Publication of TW201340812A publication Critical patent/TW201340812A/en

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Abstract

A method of manufacturing a planar board substrate (220) for receiving a magnetic core comprises steps of providing a cover layer (222) having a layer side (262), providing a base layer (224) having first and second sides (252, 254), the base layer including a material hole (250) that extends completely through the base layer between the first and second sides, coupling the cover layer and the base layer to each other along the first side and the layer side, the cover layer extending over at least a portion of the material hole, and providing a dielectric member (226) within the material hole, wherein a core-holding channel (272) exists between the dielectric member and the base layer, the core-holding channel extending circumferentially around the dielectric member and configured to have the magnetic core (288, 488, 588) therein.

Description

平面式電子裝置及製造方法 Flat electronic device and manufacturing method

本發明與電子裝置有關,像是變壓器、感應器、平衡器、偶合器或濾波器。 The invention relates to electronic devices such as transformers, inductors, balancers, couplers or filters.

某些已知的電子裝置係包含平面主體,像是包含電路板,其包含建構於該平面主體之中的一或多個磁性元件。該磁性元件可以包含一鐵氧體磁芯,其具有繞著該鐵氧體磁芯延伸的傳導繞線。這些磁性元件的某些則包含兩個傳導繞線,其並不彼此傳導連接。例如,該等傳導繞線可不實體或機械連接,因此電流無法通過一傳導繞線直接流至該另一傳導繞線。流動通過一傳導繞線的電流於該磁芯中與該另一傳導繞線中產生磁場,而在該另一傳導繞線中的磁場便產生電流。該裝置的電效能係由各種參數所決定,像是在該第一繞線中圈數對於該第二繞線中圈數的比例、該第一及/或第二繞線的形狀、該第一與第二繞線的阻抗,與其他類似參數。 Some known electronic devices include a planar body, such as a circuit board, that includes one or more magnetic elements that are constructed in the planar body. The magnetic element can include a ferrite core having a conductive winding extending around the ferrite core. Some of these magnetic elements contain two conductive windings that are not conductively connected to each other. For example, the conductive windings may not be physically or mechanically connected, so current cannot flow directly through the conductive winding to the other conductive winding. A current flowing through a conductive winding generates a magnetic field in the magnetic core and the other conductive winding, and a magnetic field in the other conductive winding generates a current. The electrical performance of the device is determined by various parameters, such as the ratio of the number of turns in the first winding to the number of turns in the second winding, the shape of the first and/or second winding, the first The impedance of one and the second winding, with other similar parameters.

製造某些已知之平面式電子裝置的程序係包含鑽除或磨邊一平面式板狀基板。更具體的,該平面式板狀基板可以包含多數個基板層(例如FR-4與其他印刷電路板形式材料)。該等基板層的部分可以利用受控制之深度磨邊方式移除。在受控制之深度磨邊方式中,可以沿著一預定路徑移動一鑽頭,以移除基板材料,並於該平面式板狀基板中提供一凹槽或凹穴。該凹槽並不完全延伸穿 過該平面式板狀基板。在形成該凹槽之後,一磁芯(例如,鐵氧體磁芯)便可裝載至該凹槽之中。雖然以受控制之深度磨邊方式可在製造該平面式電子裝置期間提供足夠的凹槽,但在某些情況中該受控制之深度磨邊方式可能使該平面式電子裝置的成本明顯增加。 A program for making certain known planar electronic devices includes drilling or edging a planar plate substrate. More specifically, the planar plate substrate may comprise a plurality of substrate layers (eg, FR-4 and other printed circuit board form materials). Portions of the substrate layers can be removed using controlled depth edging. In a controlled deep edging mode, a drill bit can be moved along a predetermined path to remove substrate material and provide a recess or pocket in the planar plate substrate. The groove does not extend completely The planar plate substrate is passed through. After the recess is formed, a magnetic core (e.g., a ferrite core) can be loaded into the recess. While a sufficient depth of embossing may be provided during the manufacture of the planar electronic device in a controlled depth edging manner, in some cases the controlled depth edging may result in a significant increase in the cost of the planar electronic device.

存在一種降低製造平面式板狀基板成本的需求。 There is a need to reduce the cost of manufacturing planar plate substrates.

根據本發明,一種製造用於接收一磁芯之一平面式板狀基板的方法係包含以下步驟,提供具有一層側之一覆蓋層、提供具有一第一側與第二側之一基礎層,該基礎層係包含完全延伸穿過該第一側與第二側之間該基礎層之一材料孔洞、沿著該第一側與該層側將該覆蓋層與該基礎層彼此結合,該覆蓋層係延伸覆蓋該材料孔洞之至少一部分,以及於該材料孔洞之中提供一介電元件,其中於該介電元件及該基礎層之間存在一芯支撐通道,該芯支撐通道係繞著該介電元件周圍延伸,並經配置以於其中具有該磁芯。 According to the present invention, a method of manufacturing a planar plate substrate for receiving a magnetic core comprises the steps of providing a cover layer having a layer side, providing a base layer having a first side and a second side, The base layer includes a material hole extending completely through the base layer between the first side and the second side, and the cover layer and the base layer are bonded to each other along the first side and the layer side, the covering The layer extends over at least a portion of the material void and provides a dielectric component in the material void, wherein a core support channel exists between the dielectric component and the base layer, the core support channel surrounding the A dielectric element extends around and is configured to have the magnetic core therein.

100‧‧‧磁性元件陣列 100‧‧‧Magnetic array

102‧‧‧磁性元件 102‧‧‧Magnetic components

104‧‧‧板狀基板 104‧‧‧ Plate substrate

106‧‧‧上方導體 106‧‧‧Upper conductor

108‧‧‧厚度尺寸 108‧‧‧ thickness dimensions

110‧‧‧下方側 110‧‧‧Lower side

112‧‧‧上方側 112‧‧‧ upper side

114‧‧‧貫通孔 114‧‧‧through holes

116‧‧‧電子裝置 116‧‧‧Electronic devices

150‧‧‧材料孔洞 150‧‧‧Material Holes

200‧‧‧磁芯 200‧‧‧ magnetic core

202‧‧‧第一電路 202‧‧‧First circuit

204‧‧‧第二電路 204‧‧‧Second circuit

206‧‧‧第一傳導回路 206‧‧‧First conduction loop

208‧‧‧第二傳導回路 208‧‧‧second conduction loop

210‧‧‧線圈 210‧‧‧ coil

220‧‧‧板狀基板 220‧‧‧ plate substrate

222‧‧‧覆蓋層 222‧‧‧ Coverage

223‧‧‧介面 223‧‧‧ interface

224‧‧‧基礎層 224‧‧‧Basic layer

226‧‧‧介電元件 226‧‧‧Dielectric components

227‧‧‧介面 227‧‧" interface

230‧‧‧板製造組件 230‧‧‧ board manufacturing components

232‧‧‧第一模具結構 232‧‧‧First mold structure

234‧‧‧第二模具結構 234‧‧‧Second mold structure

236‧‧‧接合表面 236‧‧‧ joint surface

238‧‧‧接合表面 238‧‧‧ joint surface

240‧‧‧平台 240‧‧‧ platform

241‧‧‧外部周圍 241‧‧‧External surroundings

242‧‧‧周圍表面 242‧‧‧ surrounding surface

244‧‧‧元件凹穴 244‧‧‧Component pocket

246‧‧‧內部表面 246‧‧‧Internal surface

248‧‧‧內部周圍 248‧‧‧ interior surroundings

250‧‧‧材料孔洞 250‧‧‧Material Holes

252‧‧‧第一側 252‧‧‧ first side

254‧‧‧第二側 254‧‧‧ second side

256‧‧‧厚度尺寸 256‧‧‧ thickness size

258‧‧‧厚度尺寸 258‧‧‧ thickness size

260‧‧‧第一層側 260‧‧‧ first side

262‧‧‧第二層側 262‧‧‧ second side

264‧‧‧厚度尺寸 264‧‧‧ thickness size

268‧‧‧元件面 268‧‧‧Component surface

270‧‧‧高度 270‧‧ height

272‧‧‧芯支撐通道 272‧‧‧core support channel

276‧‧‧面向內表面 276‧‧‧ facing the inner surface

277‧‧‧面向外表面 277‧‧‧ facing the outer surface

278‧‧‧底部表面 278‧‧‧ bottom surface

280‧‧‧寬度尺寸 280‧‧‧Width size

282‧‧‧內部對準特徵 282‧‧‧Internal alignment features

283‧‧‧斜面 283‧‧‧Bevel

284‧‧‧外部對準特徵 284‧‧‧ External alignment features

285‧‧‧斜面 285‧‧‧Bevel

288‧‧‧磁芯 288‧‧‧ magnetic core

290‧‧‧間隙 290‧‧‧ gap

291‧‧‧間隙 291‧‧‧ gap

292‧‧‧間隙 292‧‧‧ gap

320‧‧‧板狀基板 320‧‧‧ plate substrate

322‧‧‧覆蓋層 322‧‧‧ Coverage

324‧‧‧A基礎層 324‧‧‧A base layer

324‧‧‧B基礎層 324‧‧‧B base layer

330‧‧‧板製造組件 330‧‧‧Board manufacturing components

332‧‧‧第一模具結構 332‧‧‧First mold structure

334‧‧‧第二模具結構 334‧‧‧Second mold structure

336‧‧‧接合表面 336‧‧‧ joint surface

338‧‧‧接合表面 338‧‧‧ joint surface

340‧‧‧A層側 340‧‧‧A side

340‧‧‧B層側 340‧‧‧B side

342‧‧‧A層側 342‧‧‧A side

342‧‧‧B層側 342‧‧‧B side

344‧‧‧層側 344‧‧‧ layer side

346‧‧‧層側 346‧‧‧ layer side

348‧‧‧材料孔洞 348‧‧‧Material Holes

348‧‧‧A材料孔洞 348‧‧‧A material hole

348‧‧‧B材料孔洞 348‧‧‧B material hole

350‧‧‧材料孔洞 350‧‧‧Material Holes

350‧‧‧A材料孔洞 350‧‧‧A material hole

350‧‧‧B材料孔洞 350‧‧‧B material hole

352A‧‧‧基礎延伸部 352A‧‧‧Basic Extension

352B‧‧‧基礎延伸部 352B‧‧‧Basic Extension

354A‧‧‧介電元件 354A‧‧‧ dielectric components

354B‧‧‧介電元件 354B‧‧‧ dielectric components

356A‧‧‧接點 356A‧‧‧Contact

356B‧‧‧接點 356B‧‧‧Contacts

372‧‧‧芯支撐通道 372‧‧‧core support channel

373‧‧‧介電元件 373‧‧‧Dielectric components

374‧‧‧材料孔洞 374‧‧‧Material Holes

376‧‧‧顆粒 376‧‧‧ granules

416‧‧‧平面式電子裝置 416‧‧‧Flat electronic devices

420‧‧‧板狀基板 420‧‧‧ plate substrate

422‧‧‧覆蓋層 422‧‧‧ Coverage

424‧‧‧基礎層 424‧‧‧Basic layer

440‧‧‧第一層側 440‧‧‧ first side

442‧‧‧第二層側 442‧‧‧ second side

450‧‧‧材料孔洞 450‧‧‧Material Holes

472‧‧‧封裝材料 472‧‧‧Packaging materials

474‧‧‧基板層 474‧‧‧ substrate layer

476‧‧‧上方傳導層 476‧‧‧Upper conductive layer

478‧‧‧下方傳導層 478‧‧‧lower conductive layer

480‧‧‧穿過孔洞 480‧‧‧through the hole

482‧‧‧穿過孔洞 482‧‧‧through the hole

484‧‧‧傳導貫通孔 484‧‧‧Transmission through hole

486‧‧‧傳導貫通孔 486‧‧‧Transmission through hole

488‧‧‧磁芯 488‧‧‧ magnetic core

490‧‧‧芯部孔穴 490‧‧‧core cavity

491‧‧‧介電元件 491‧‧‧Dielectric components

492‧‧‧上方導體 492‧‧‧Upper conductor

494‧‧‧下方導體 494‧‧‧lower conductor

516‧‧‧平面式電子裝置 516‧‧‧Flat electronic devices

520‧‧‧板狀基板 520‧‧‧ plate substrate

522‧‧‧覆蓋層 522‧‧‧ Coverage

523‧‧‧對準特徵 523‧‧‧ alignment features

524‧‧‧基礎層 524‧‧‧Basic layer

525‧‧‧邊緣 525‧‧‧ edge

527‧‧‧斜面 527‧‧‧Slope

540‧‧‧第一側 540‧‧‧ first side

542‧‧‧第二側 542‧‧‧ second side

550‧‧‧材料孔洞 550‧‧‧ material holes

551‧‧‧覆蓋孔洞 551‧‧ Covering the hole

572‧‧‧封裝材料 572‧‧‧Packaging materials

574‧‧‧基板層 574‧‧‧ substrate layer

575‧‧‧基板層 575‧‧‧ substrate layer

576‧‧‧上方傳導層 576‧‧‧Upper conductive layer

578‧‧‧下方傳導層 578‧‧‧lower conductive layer

580‧‧‧穿過孔洞 580‧‧‧through the hole

582‧‧‧穿過孔洞 582‧‧‧through the hole

584‧‧‧貫通孔 584‧‧‧through holes

586‧‧‧貫通孔 586‧‧‧through hole

588‧‧‧磁芯 588‧‧‧ magnetic core

590‧‧‧芯部孔穴 590‧‧‧core cavity

591‧‧‧介電元件 591‧‧‧Dielectric components

592‧‧‧上方導體 592‧‧‧Upper conductor

594‧‧‧下方導體 594‧‧‧lower conductor

700‧‧‧方法 700‧‧‧ method

702‧‧‧步驟 702‧‧‧Steps

704‧‧‧步驟 704‧‧‧Steps

706‧‧‧步驟 706‧‧‧Steps

708‧‧‧步驟 708‧‧ steps

710‧‧‧步驟 710‧‧ steps

712‧‧‧步驟 712‧‧‧Steps

714‧‧‧步驟 714‧‧‧Steps

800‧‧‧空心鑽頭 800‧‧‧ hollow drill bit

802‧‧‧軸桿 802‧‧‧ shaft

804‧‧‧鑽頭端 804‧‧‧Drill end

806‧‧‧軸桿凹穴 806‧‧‧ shaft recess

808‧‧‧鑽頭壁部 808‧‧‧Drill wall

810‧‧‧板狀基板 810‧‧‧ plate substrate

812‧‧‧階段 812‧‧‧ stage

813‧‧‧階段 813‧‧‧ stage

814‧‧‧芯支撐通道 814‧‧‧core support channel

820‧‧‧Forstner鑽頭 820‧‧‧Forstner drill bit

822‧‧‧軸桿 822‧‧‧ shaft

824‧‧‧鑽頭端 824‧‧‧Drill end

826‧‧‧邊緣 826‧‧‧ edge

828‧‧‧弧形臂部 828‧‧‧Shaped arms

830‧‧‧弧形臂部 830‧‧‧Shaped arms

832‧‧‧板狀基板 832‧‧‧ plate substrate

834‧‧‧階段 834‧‧‧ stage

836‧‧‧材料孔洞 836‧‧‧Material Holes

840‧‧‧階段 840‧‧‧ stage

第一圖為一平面式電子裝置具體實施例之立體圖,該平面式電子裝置具有一磁性元件陣列。 The first figure is a perspective view of a planar electronic device having an array of magnetic elements.

第二圖為第一圖所示該電子裝置之該等磁性元件的上視圖。 The second figure is a top view of the magnetic components of the electronic device shown in the first figure.

第三圖為根據一具體實施例之一板製造組件與一平面式板狀基板的分解圖。 The third figure is an exploded view of a board manufacturing assembly and a planar plate substrate in accordance with an embodiment.

第四圖為在一成層程序期間,第三圖之該製造組件與該板狀基板的橫斷面。 The fourth figure is a cross section of the manufacturing assembly and the plate substrate of the third figure during a layering process.

第五圖為第三圖之該板狀基板的放大橫斷面,其圖示一芯支撐通道。 The fifth figure is an enlarged cross section of the plate substrate of the third figure, which illustrates a core support channel.

第六圖為第三圖之該板狀基板的放大平面圖,其圖示該芯支撐通道。 The sixth drawing is an enlarged plan view of the plate substrate of the third figure, which illustrates the core support passage.

第七圖為該板狀基板之一放大橫斷面,其圖示於該芯支撐通道之中係具有一磁芯。 The seventh figure is an enlarged cross section of the plate substrate, and the figure shows a magnetic core in the core support channel.

第八圖為根據一具體實施例之一板製造組件與一平面式板狀基板的分解圖。 Figure 8 is an exploded view of a panel fabrication assembly and a planar plate substrate in accordance with an embodiment.

第九圖為第八圖之該板狀基板的上視平面圖。 The ninth drawing is a top plan view of the plate substrate of the eighth figure.

第十圖為第八圖之該板狀基板於一基板移除程序之前的放大橫斷面。 The tenth figure is an enlarged cross section of the plate substrate of the eighth figure before a substrate removal process.

第十一圖為第八圖之該板狀基板於一基板移除程序之後的放大橫斷面。 Figure 11 is an enlarged cross-sectional view of the plate substrate of Figure 8 after a substrate removal procedure.

第十二圖為根據一具體實施例所形成之一平面式板狀基板的分解圖。 Figure 12 is an exploded view of a planar plate substrate formed in accordance with an embodiment.

第十三圖為根據一具體實施例所形成之一平面式電子裝置橫斷面,該平面式電子裝置包含第十二圖之該板狀基板。 Figure 13 is a cross-sectional view of a planar electronic device formed according to an embodiment, the planar electronic device comprising the plate substrate of the twelfth figure.

第十四圖為根據一具體實施例所形成之一平面式板狀基板的分解圖。 Figure 14 is an exploded view of a planar plate substrate formed in accordance with an embodiment.

第十五圖為根據一具體實施例所形成之一平面式電子裝置橫斷面,該平面式電子裝置包含第十四圖之該板狀基板。 Figure 15 is a cross-sectional view of a planar electronic device formed according to an embodiment, the planar electronic device comprising the plate substrate of Figure 14.

第十六圖為描述製造根據各種具體實施例之一平面式板狀基板的方法流程圖。 Figure 16 is a flow chart depicting a method of fabricating a planar plate substrate in accordance with various embodiments.

第十七圖為一空心鑽頭的立體圖,該空心鑽頭可於一平面式板狀基板製造期間使用。 Figure 17 is a perspective view of a hollow drill bit that can be used during the manufacture of a planar plate substrate.

第十八圖圖示利用該空心鑽頭於不同製造階段時之該平面式板狀基板。 Figure 18 illustrates the planar plate substrate at the different stages of manufacture using the hollow drill bit.

第十九圖為一Forstner鑽頭的立體圖,該空心鑽頭可於一平面式板狀基板製造期間使用。 Figure 19 is a perspective view of a Forstner drill bit that can be used during the manufacture of a planar plate substrate.

第二十圖圖示利用該Forstner鑽頭於不同製造階段時之該平面式板狀基板。 Figure 20 illustrates the planar plate substrate at different stages of manufacture using the Forstner bit.

在此敘述之一或多個具體實施例係提供多數平板式電子裝置,該等平板式電子裝置包含支撐多數磁性元件之多數平面式板狀基板,像是包含多數平面變壓器。該等磁性元件可以包含被嵌入至該對應板狀基板中之多數磁芯(例如,鐵氧磁體(ferrite material bodies))。該等磁性元件也可以包含對於該等磁芯所捲繞之多數傳導繞線或傳導回路。該板狀基板可以具有與一印刷電路板(PCB)類似的組成,並包含多數個基板層。該等基板層可以包含一基礎層(或第一層)與一覆蓋層(或第二層)。該基礎層可以具有延伸穿過之一或多個材料孔洞,其尺寸與形狀則用於接收個別磁芯。該覆蓋層可以沿著該基礎層之一側延伸,並完全覆蓋該等材料孔洞或只部分覆蓋該等材料孔洞。在特定具體實施例中,該等材料孔洞完全延伸穿過該基礎層。 One or more embodiments described herein provide a plurality of flat panel electronic devices including a plurality of planar plate substrates supporting a plurality of magnetic components, such as a plurality of planar transformers. The magnetic elements may comprise a plurality of magnetic cores (e.g., ferrite material bodies) embedded in the corresponding plate-like substrate. The magnetic elements may also include a plurality of conductive windings or conductive loops wound around the cores. The plate substrate may have a composition similar to that of a printed circuit board (PCB) and include a plurality of substrate layers. The substrate layers may comprise a base layer (or first layer) and a cover layer (or second layer). The base layer can have holes extending through one or more of the materials, the size and shape of which are used to receive the individual cores. The cover layer may extend along one side of the base layer and completely cover the holes of the material or only partially cover the holes of the materials. In a particular embodiment, the holes of the material extend completely through the base layer.

該平面式板狀基板係經配置以一預定方式支撐該等磁芯(例如,以相對於該基礎層之預定方向及/或位置)。該基礎及/或覆蓋層可以包含多數對準特徵,該等對準特徵係促成該等磁芯定位於該板狀基板之中。例如在某些具體實施例中,該基礎層可以包含至少部分定義該等材料孔洞之多數對準特徵,並於該磁芯裝載至該材料孔洞之中時與該磁芯接合。在某些具體實施例中,該覆蓋層也可以經配置以支撐該等磁芯。在所述具體實施例中,該覆蓋層可成為一中心層。例如,該覆蓋層可以包含多數覆蓋孔洞,其尺寸小於該等磁芯。當裝載一磁芯至與一覆蓋孔洞對準之該材料孔洞中時,該磁芯可以與界定該覆蓋孔洞之一邊緣接合。該邊緣可以一預定方式支撐該磁芯。 The planar plate substrate is configured to support the cores in a predetermined manner (e.g., in a predetermined direction and/or position relative to the base layer). The base and/or cover layer can include a plurality of alignment features that cause the cores to be positioned within the plate substrate. For example, in some embodiments, the base layer can include a plurality of alignment features that at least partially define the holes of the material and engage the core when the core is loaded into the hole of the material. In some embodiments, the cover layer can also be configured to support the cores. In the particular embodiment, the cover layer can be a central layer. For example, the cover layer can comprise a plurality of cover holes that are smaller in size than the cores. When a magnetic core is loaded into the hole of the material aligned with a cover hole, the core can engage an edge defining one of the cover holes. The edge can support the core in a predetermined manner.

在該平面式電子裝置中,可將該等磁芯封裝於一低應力黏著劑中,像是封裝於低應力環氧樹脂之中,其預計能提供一適當的電氣環境。在一硬化階段中,該環氧樹脂本質上係近似為固體、可偏折及/或有彈性。該硬化環氧樹脂之彈性及/或可偏折性可 根據該環氧樹脂所使用之硬化媒介及/或成分而不同。位於該平面式板狀基板上或於之中之一傳導材料之一或多層,以及延伸穿過該板狀基板之多數傳導貫通孔可以提供一磁性元件,像是變壓器。 In the planar electronic device, the cores can be encapsulated in a low stress adhesive, such as a low stress epoxy, which is expected to provide a suitable electrical environment. In a hardening stage, the epoxy resin is essentially solid, deflectable, and/or elastic. The elastic and/or deflectable properties of the hardened epoxy resin can be It differs depending on the hardening medium and/or composition used for the epoxy resin. One or more layers of conductive material on or in one of the planar plate-like substrates, and a plurality of conductive through-holes extending through the plate-like substrate, may provide a magnetic element, such as a transformer.

第一圖為一平面式電子裝置116具體實施例的立體圖,其具有一磁性元件102陣列100。第一圖圖示之該等磁性元件102係為變壓器裝置。替代的,該等磁性元件102可為或可包含另一電子裝置或元件,像是感應器、濾波器、平衡器、偶合器及其他類似元件。該等磁性元件102可以包含一磁芯,像是一鐵氧體主體或是其他磁性材料。該等磁性元件102可以位於一平面式介電質或非傳導板狀基板104中。該等所述磁性元件102一般而言係為卵形,也可以具有其他形狀,像是圓形。 The first figure is a perspective view of a particular embodiment of a planar electronic device 116 having an array 100 of magnetic elements 102. The magnetic elements 102 illustrated in the first figure are transformer devices. Alternatively, the magnetic elements 102 can be or can include another electronic device or component such as an inductor, a filter, a balancer, a coupler, and the like. The magnetic elements 102 can comprise a magnetic core, such as a ferrite body or other magnetic material. The magnetic elements 102 can be located in a planar dielectric or non-conductive plate substrate 104. The magnetic elements 102 are generally oval in shape and may have other shapes, such as a circular shape.

該板狀基板104具有於該板狀基板104之一第一或下方側110與一相對第二或上方側112之間所測量之厚度尺寸108。當在此使用時,該用詞「下方」或「上方」係用於指示該板狀基板104之該等相對側。該等用詞「下方」及「上方」的使用並不限制或要求該板狀基板104之單一、特定方向。例如,該板狀基板104可被翻轉,因此該上方側112便位於該下方側110以下。 The plate substrate 104 has a thickness dimension 108 measured between a first or lower side 110 of the plate substrate 104 and a second or upper side 112. As used herein, the terms "below" or "above" are used to indicate the opposite sides of the plate substrate 104. The use of the terms "below" and "above" does not limit or require a single, specific orientation of the plate substrate 104. For example, the plate substrate 104 can be flipped such that the upper side 112 is below the lower side 110.

對於每一磁性元件102而言,許多上方導體106係位於該板狀基板104之該上方側112上,而許多下方導體(未圖示)則位於該板狀基板104之該下方側110上。該等下方導體可以具有與該等上方導體106相同的尺寸及/或形狀。該板狀基板104包含多數貫通孔114,該等貫通孔114於該板狀基板104之該下方與上方側110、112之間延伸穿過該板狀基板104。該等貫通孔114係以一傳導材料所填充或電鍍,以提供穿過該板狀基板104之多數傳導路徑。每一貫通孔114之相對端都與該板狀基板104上該等導體106及該等下方導體傳導連接。該等貫通孔114、上方導體106與下方導體形成多數回路或繞線傳導路徑,其繞著位於該板狀基板104之中之一磁芯200(於第二圖圖示)捲繞許多次。 For each magnetic element 102, a plurality of upper conductors 106 are located on the upper side 112 of the plate substrate 104, and a plurality of lower conductors (not shown) are located on the lower side 110 of the plate substrate 104. The lower conductors may have the same size and/or shape as the upper conductors 106. The plate substrate 104 includes a plurality of through holes 114 extending through the plate substrate 104 between the lower side and the upper sides 110 and 112 of the plate substrate 104. The through holes 114 are filled or plated with a conductive material to provide a plurality of conductive paths through the plate substrate 104. The opposite ends of each of the through holes 114 are electrically connected to the conductors 106 and the lower conductors on the plate substrate 104. The through holes 114, the upper conductors 106, and the lower conductors form a plurality of loops or winding conduction paths that are wound around the magnetic core 200 (shown in the second figure) located in the plate substrate 104 many times.

第二圖為第一圖中所示兩磁性元件102之上視圖。對於每一磁性元件102而言,該等上方導體106係與該等上方導體106相對側處之該等貫通孔114傳導連接。如以上敘述,該等貫通孔114包含傳導材料,並與位於該板狀基板104之下方側110(第一圖)上該等下方導體(未圖示)傳導連接。 The second figure is a top view of the two magnetic elements 102 shown in the first figure. For each of the magnetic elements 102, the upper conductors 106 are conductively connected to the through holes 114 at the opposite sides of the upper conductors 106. As described above, the through holes 114 include a conductive material and are conductively connected to the lower conductors (not shown) on the lower side 110 (first view) of the plate substrate 104.

由該等上方導體106、貫通孔114與下方導體所形成之該等傳導路徑可被稱為第一與第二傳導回路206、208,該等傳導回路206、208繞著該磁芯200延伸。第二圖中每一個參考數字206、208都指至一虛線方框,該等虛線方框包圍該相同磁性元件102不同傳導回路。每一傳導回路206、208都繞著該磁芯200包含許多圈數210。該等傳導回路206、208與該磁芯200的結合,形成該磁性元件102。捲繞相同磁芯200之該等傳導回路206、208並不彼此傳導連接。在一具體實施例中,該磁性元件102之該第一傳導回路206從一第一電路202接收電力。該相同磁性元件102之該第二傳導回路208則可以與一第二電路204傳導連接。 The conductive paths formed by the upper conductors 106, the through holes 114, and the lower conductors may be referred to as first and second conductive loops 206, 208 that extend around the core 200. Each of the reference numerals 206, 208 in the second figure refers to a dashed box that encloses the different conductive loops of the same magnetic element 102. Each of the conductive loops 206, 208 includes a plurality of turns 210 around the core 200. The combination of the conductive loops 206, 208 and the magnetic core 200 forms the magnetic element 102. The conductive loops 206, 208 that wind the same core 200 are not conductively connected to each other. In one embodiment, the first conduction loop 206 of the magnetic element 102 receives power from a first circuit 202. The second conductive loop 208 of the same magnetic component 102 can be conductively coupled to a second circuit 204.

該第一與第二傳導回路206、208可由該磁芯200彼此電感連接,因此通過該第一傳導回路206的電流係以電感方式傳輸至該第二傳導回路208。例如,通過該第一傳導回路206的變化電流可於該磁芯200中產生變化磁流。該變化磁流於該第二傳導回路208中產生一變化磁場。該變化磁場於該第二傳導回路208中感應一變化電動勢或電壓。該第二傳導回路208傳輸所形成之電壓至該第二電路204。 The first and second conductive loops 206, 208 can be inductively coupled to each other by the magnetic core 200 such that current through the first conductive loop 206 is inductively transmitted to the second conductive loop 208. For example, a varying current through the first conduction loop 206 can produce a varying magnetic current in the magnetic core 200. The varying magnetic current creates a varying magnetic field in the second conductive loop 208. The varying magnetic field induces a varying electromotive force or voltage in the second conduction loop 208. The second conduction loop 208 transmits the formed voltage to the second circuit 204.

第三圖至第十六圖描繪各種平面式板狀基板,該等平面式板狀基板可與一平面式電子裝置一起使用,像是與第一圖中所示之該電子裝置116一起使用。該等平面式板狀基板可經配置以支撐多數磁性元件,像是變壓器。第三圖至第十六圖也圖示可製造該等板狀基板的各種方法。當在此使用時,術語「平面式板狀基板」包含後續被修改之板狀基板。例如,第三圖至第十六圖中所圖示之 該每一個平面式板狀基板都可以利用移除(例如,透過鑽除、衝壓或蝕刻)或增添(例如,利用增添其他基板層、封裝材料或其他電子材料)該基板材料的方式,以及增添或蝕刻傳導材料的方式進行修改。換句話說,在此敘述之該等平面式板狀基板在適合於平面式電子裝置中使用之前可能需要其他修改。 Figures 3 through 16 depict various planar plate substrates that can be used with a planar electronic device, such as the electronic device 116 shown in the first figure. The planar plate substrates can be configured to support a plurality of magnetic components, such as a transformer. The third to sixteenth figures also illustrate various methods by which such plate-like substrates can be fabricated. As used herein, the term "planar plate substrate" encompasses a subsequently modified plate substrate. For example, as shown in the third to the sixteenth Each of the planar plate substrates can be removed (eg, by drilling, stamping, or etching) or added (eg, by adding other substrate layers, packaging materials, or other electronic materials) to the substrate material, and adding Modifications are made by etching the conductive material. In other words, the planar plate substrates described herein may require additional modifications before being suitable for use in a planar electronic device.

第三圖為一平面式板狀基板220之各種元件分解圖,而該等元件係可用於製造該板狀基板220。如同所示,該平面式板狀基板220可以包含一覆蓋層222、一基礎層224與多數介電元件226。如圖所示,一板製造組件230可包含第一與第二模具或擠壓結構232、234。該板製造組件230可由一成層壓縮程序所使用或做為一成層壓縮程序,以組合多數基板層,像是組合該覆蓋與基板層222、224。在所述具體實施例中,該第一與第二模具結構232、234包含剛性材料。例如,該第一與第二模具結構可為鋼或鋁平板或是鑲板壓模平板。該等平板可為無缺陷之光滑表面,並具有與一組合成層相同的尺寸與形狀。在該鑲板壓模程序期間,該等平板可以與該成層接觸以傳輸正向力,並於所形成之成層結構上提供一平滑表面。該第一與第二模具結構232、234係經配置以抵抗伴隨該電路板成層程序所產生的壓力與熱。 The third figure is an exploded view of various elements of a planar plate substrate 220 that can be used to fabricate the plate substrate 220. As shown, the planar plate substrate 220 can include a cover layer 222, a base layer 224, and a plurality of dielectric elements 226. As shown, a board manufacturing assembly 230 can include first and second mold or extruded structures 232, 234. The board manufacturing assembly 230 can be used by a layered compression process or as a layered compression process to combine a plurality of substrate layers, such as the cover and substrate layers 222, 224. In the particular embodiment, the first and second mold structures 232, 234 comprise a rigid material. For example, the first and second mold structures can be steel or aluminum flat sheets or panel molded flat sheets. The plates can be smooth surfaces without defects and have the same size and shape as a set of composite layers. During the panel stamping process, the plates may be in contact with the layer to transmit a positive force and provide a smooth surface over the formed layered structure. The first and second mold structures 232, 234 are configured to resist the pressure and heat generated by the board layering process.

該第一與第二模具結構232、234分別包含接合表面236、238,其經配置以與該板狀基板220介接並擠壓該板狀基板220。該等接合表面236、238彼此面對,並經配置以使該覆蓋層222、該基礎層224與該等介電元件226位於其之間。在所述具體實施例中,該接合表面236係為平面。然而該接合表面236可為製造該板狀基板220所需要的形狀。 The first and second mold structures 232, 234 respectively include engagement surfaces 236, 238 that are configured to interface with the plate substrate 220 and compress the plate substrate 220. The bonding surfaces 236, 238 face each other and are configured such that the cover layer 222, the base layer 224, and the dielectric elements 226 are positioned therebetween. In the particular embodiment, the engagement surface 236 is planar. However, the bonding surface 236 can be the shape required to fabricate the plate substrate 220.

該第二模具結構234包含多數個平台240,該等平台與該接合表面238連接並從其凸出。在某些具體實施例中,該第二模具結構234係為一單一連續結構,因此該接合表面238與該等平台240係以相同材料(例如,鋼、鋁以及其他類似材料)所形成。 該等平台240實質上相對於該接合表面238為直立。例如,該每一個平台240都具有一外部或周圍表面242,其垂直於該接合表面238延伸,並徑向面離該對應平台240。然而在其他具體實施例中,該周圍表面242可以相對於該接合表面238傾斜延伸。除了該等平台240凸出的部分以外,該接合表面238實質上可為完全平坦。 The second mold structure 234 includes a plurality of platforms 240 that are coupled to and project from the engagement surface 238. In some embodiments, the second mold structure 234 is a single continuous structure such that the joint surface 238 is formed of the same material (eg, steel, aluminum, and the like) as the platforms 240. The platforms 240 are substantially upright relative to the engagement surface 238. For example, each of the platforms 240 has an outer or peripheral surface 242 that extends perpendicular to the engagement surface 238 and faces away from the corresponding platform 240. In other embodiments, however, the peripheral surface 242 can extend obliquely relative to the engagement surface 238. In addition to the portions of the platform 240 that are convex, the engagement surface 238 can be substantially completely flat.

每一平台240都具有由該周圍表面242所界定之一外部周圍241。當直接於該接合表面238上往下看時,該外部周圍241可包含一彎曲輪廓。例如在所述具體實施例中,該周圍表面242具有使該外部周圍241形成一完全圓形的形狀。然而,該平台240該等外部周圍241可具有包含彎曲輪廓的其他形狀。例如,該外部周圍241實質上可為圓形、半圓形、卵形及其他類似形狀。此外,該彎曲輪廓可包含部分為彎曲以及其他部分為線性的外部周圍241。同樣的,雖然於所述具體實施例中該等平台240具有相同形狀,但其他具體實施例可包含具有不同形狀之平台。例如,一平台240可為圓形,而另一平台可為卵形或方形。 Each platform 240 has an outer perimeter 241 defined by the surrounding surface 242. The outer perimeter 241 can include a curved profile when viewed directly down the engagement surface 238. For example, in the particular embodiment, the peripheral surface 242 has a shape that causes the outer perimeter 241 to form a completely circular shape. However, the outer perimeter 241 of the platform 240 can have other shapes that include a curved profile. For example, the outer perimeter 241 can be substantially circular, semi-circular, oval, and the like. Additionally, the curved profile can include an outer perimeter 241 that is partially curved and other portions are linear. Likewise, while the platforms 240 have the same shape in the particular embodiment, other embodiments may include platforms having different shapes. For example, one platform 240 can be circular while the other platform can be oval or square.

第三圖中同樣圖示該每一個平台都具有一元件凹穴244。該元件凹穴244係完全由對應平台240所環繞,並於朝離該接合表面238的方向中開放。在所述具體實施例中,該等元件凹穴244的尺寸與形狀係可接收該等對應介電元件226。該每一個元件凹穴244都由該對應平台240之一對應內部或內側表面246(於第四圖圖示)所界定。該內部表面246可界定一內部周圍248。該內部周圍248可具有與該外部周圍241相似的形狀(例如,該內部與外部周圍248、241可為不同尺寸的圓形或不同尺寸的方形)。在其他具體實施例中,該內部與外部周圍248、241可為不同形狀。 Also shown in the third figure is that each of the platforms has a component pocket 244. The component pocket 244 is completely surrounded by the corresponding platform 240 and is open in a direction away from the engagement surface 238. In the particular embodiment, the component pockets 244 are sized and shaped to receive the corresponding dielectric components 226. Each of the component pockets 244 is defined by a corresponding inner or inner side surface 246 (illustrated in the fourth figure) of the corresponding platform 240. The interior surface 246 can define an interior perimeter 248. The inner perimeter 248 can have a similar shape to the outer perimeter 241 (eg, the inner and outer perimeters 248, 241 can be circular or different sized squares of different sizes). In other embodiments, the inner and outer perimeters 248, 241 can be of different shapes.

該覆蓋層222包含用於製造電路板之一基板材料。要瞭解像是該覆蓋層222與該基礎層224之基板層係可以包含多數個堆疊基板層(例如,多數次層)。該基板材料可以包含或可以由一介電材料所形成,像是適用於一印刷電路板(PCB)之玻璃填充環 氧樹脂(例如,FR-4)、熱固性材料或熱塑性材料。該等基板材料可為完全硬化基板與未硬化B階段材料的交替層,除非該等材料係為熱塑性或流體階段的熱固性材料。該基礎層224厚度尺寸256可為單一厚層或許多半固化薄片或具有類似型態的交替層。可以使用其他的剛性或半剛性材料。該覆蓋層222包含相對之第一與第二層側260、262與在其之間延伸之厚度尺寸264。在所述具體實施例中,該覆蓋層222可在堆疊至該基礎層224上之前形成。然而在其他具體實施例中,該覆蓋層222可以覆蓋該基礎層224形成。例如,可以沿著該基礎層224散佈一黏性聚合物材料,並接著進行硬化以形成該覆蓋層222。在所述具體實施例中,該覆蓋層222係為不包含任何孔洞之一連續主體。 The cover layer 222 includes a substrate material for fabricating one of the circuit boards. It is to be understood that the substrate layer such as the cover layer 222 and the base layer 224 may comprise a plurality of stacked substrate layers (eg, a plurality of sub-layers). The substrate material may comprise or may be formed of a dielectric material such as a glass filled ring suitable for a printed circuit board (PCB). An oxyresin (for example, FR-4), a thermosetting material or a thermoplastic material. The substrate material can be an alternating layer of fully hardened substrate and uncured B-stage material unless the materials are thermoplastic or fluid phase thermoset materials. The base layer 224 thickness dimension 256 can be a single thick layer or a plurality of prepreg sheets or alternating layers of a similar pattern. Other rigid or semi-rigid materials can be used. The cover layer 222 includes opposing first and second layer sides 260, 262 and a thickness dimension 264 extending therebetween. In the particular embodiment, the cover layer 222 can be formed prior to stacking onto the base layer 224. In other embodiments, however, the cover layer 222 can be formed overlying the base layer 224. For example, a viscous polymer material can be dispersed along the base layer 224 and then hardened to form the cover layer 222. In the particular embodiment, the cover layer 222 is a continuous body that does not contain any holes.

該基礎層224也包含一基板材料,其可以與以上針對該覆蓋層222所敘述之材料相同。該基礎層224具有第一與第二側252、254與在其之間延伸之厚度尺寸256。該第一與第二側252、254也可稱為層側或基礎側。如同所示,該基礎層224包含多數個材料孔洞250。該等材料孔洞250可以構成於該第一與第二側252、254之間完全延伸穿過該基礎層224的多數通道。在第三圖所示之具體實施例中,該等材料孔洞250之尺寸與形狀係可接收多數對應平台240。 The base layer 224 also includes a substrate material that can be the same as described above for the cover layer 222. The base layer 224 has first and second sides 252, 254 and a thickness dimension 256 extending therebetween. The first and second sides 252, 254 may also be referred to as the layer side or the base side. As shown, the base layer 224 includes a plurality of material holes 250. The material apertures 250 can be formed in a plurality of channels extending completely through the base layer 224 between the first and second sides 252, 254. In the particular embodiment illustrated in the third figure, the material apertures 250 are sized and shaped to receive a plurality of corresponding platforms 240.

該等材料孔洞250可利用移除該基礎層224之該基板材料的方式形成。例如,該等材料孔洞250可例如在一精準衝壓程序期間,以衝壓該基礎層224的方式形成。當衝壓該基礎層224以形成該等材料孔洞250時,該基礎層224係定位於一衝頭(未圖示)與一對應模具(未圖示)之間。該衝頭具有一端部,其形狀與該材料孔洞250所需之孔洞尺寸與形狀相同。該模具一般而言包含一凹槽或凹穴,其尺寸與形狀係用於接收該受衝壓材料與該衝頭端部。在將該基礎層224定位於該衝頭與該模具之間的情況下,驅動該衝頭穿過該基礎層224進入該模具之中。該衝頭剪切該基礎層224之 基板材料,藉此形成該等材料孔洞250。 The material holes 250 can be formed by removing the substrate material of the base layer 224. For example, the material holes 250 can be formed, for example, by stamping the base layer 224 during a precision stamping process. When the base layer 224 is stamped to form the material holes 250, the base layer 224 is positioned between a punch (not shown) and a corresponding mold (not shown). The punch has an end portion that is the same size and shape as the hole required for the material hole 250. The mold generally includes a recess or pocket sized and shaped to receive the stamped material and the end of the punch. With the base layer 224 positioned between the punch and the mold, the punch is driven through the base layer 224 into the mold. The punch cuts the base layer 224 The substrate material, thereby forming the material holes 250.

在衝壓該基礎層224之所述具體實施例中,界定該材料孔洞250之一面向內表面276(於第五圖圖示)係為一剪切表面。更具體的,該面向內表面276可以表現出與該受剪切表面相關之品質、性質及/或特性。該基礎層224可以接受來自相同衝頭的多次分離衝壓,以形成該多數個材料孔洞250。在其他具體實施例中,可以同時使用多數個衝頭以同時形成該等材料孔洞250。例如,一多頭機器可以驅動該多數個衝頭至一對應多數模具之中,以同時產生多數個材料孔洞250。 In the particular embodiment of stamping the base layer 224, one of the material apertures 250 defining the inner surface 276 (illustrated in the fifth figure) is a shear surface. More specifically, the inwardly facing surface 276 can exhibit qualities, properties, and/or characteristics associated with the sheared surface. The base layer 224 can accept multiple separate stampings from the same punch to form the plurality of material apertures 250. In other embodiments, a plurality of punches can be used simultaneously to simultaneously form the material holes 250. For example, a multi-head machine can drive the plurality of punches into a corresponding plurality of molds to simultaneously produce a plurality of material holes 250.

然而,可以其他方式形成該等材料孔洞250。例如,可以透過鑽除或磨邊方式形成該等材料孔洞250。鑽除動作可以利用一空心鑽頭、Forstner鑽頭或一標準PCB鑽頭進行。當使用磨邊方式時,雖然可以使用其他鑽頭但建議使用一標準鑽頭。在所述具體實施例中,界定該材料孔洞250之該面向內表面276係為一鑽除表面。在其他具體實施例中,該等材料孔洞250係由蝕刻該基礎層224的方式形成,因此該等材料孔洞250便由該等蝕刻表面所界定。蝕刻動作可由反應式離子蝕刻(RIE)或電漿蝕刻法進行。在任一情況中,該面向內表面276可以表現與如何形成該材料孔洞250有關的品質、性質及/或特性。可以在檢查該板狀基板或後續形成之電子裝置後,立即確認形成該等材料孔洞250的製造方法(例如,衝壓、鑽除、蝕刻及其他類似方式)。檢查該板狀基板或該電子裝置的方式可使用一掃描式電子顯微鏡(SEM)或其他顯微鏡進行。 However, the material holes 250 can be formed in other ways. For example, the holes 250 of the material may be formed by drilling or edging. The drilling action can be performed using a hollow drill bit, a Forstner drill bit or a standard PCB drill bit. When using the edging method, it is recommended to use a standard drill bit, although other drill bits can be used. In the particular embodiment, the inwardly facing surface 276 defining the material aperture 250 is a drilled surface. In other embodiments, the material holes 250 are formed by etching the base layer 224 such that the material holes 250 are defined by the etched surfaces. The etching action can be performed by reactive ion etching (RIE) or plasma etching. In either case, the inward facing surface 276 can exhibit qualities, properties, and/or characteristics associated with how the material aperture 250 is formed. The method of forming the holes 250 of the materials (e.g., stamping, drilling, etching, and the like) can be confirmed immediately after inspection of the plate substrate or subsequently formed electronic device. The manner in which the plate substrate or the electronic device is inspected can be performed using a scanning electron microscope (SEM) or other microscope.

該等介電元件226具有可被安裝於該模具結構234之多數對應凹穴244之中的形狀與尺寸。例如,該等介電元件226的形狀可類似於由該內部周圍248所界定的形狀。然而,該等介電元件226的尺寸可略小於該等對應元件凹穴244的尺寸。該介電元件226的厚度尺寸258實質上可以等於該基礎層224的厚度尺寸 256。在某些具體實施例中,該等介電元件226係由從該基礎層224所移除之基板材料所形成。例如,來自於衝壓該基礎層224以形成該等材料孔洞250之一的基板材料也可以用作為該等介電元件226之一。 The dielectric elements 226 have shapes and sizes that can be mounted in a plurality of corresponding pockets 244 of the mold structure 234. For example, the shape of the dielectric elements 226 can be similar to the shape defined by the interior perimeter 248. However, the dimensions of the dielectric elements 226 may be slightly smaller than the dimensions of the corresponding component pockets 244. The thickness dimension 258 of the dielectric element 226 can be substantially equal to the thickness dimension of the base layer 224 256. In some embodiments, the dielectric elements 226 are formed from substrate material removed from the base layer 224. For example, a substrate material from which the base layer 224 is stamped to form one of the material holes 250 can also be used as one of the dielectric elements 226.

在某些具體實施例中,利用像是熱固性樹脂或熱塑性樹脂的流體階段材料,也可以是取代使用像是FR-4之預先硬化C階段材料的較佳材料。該流體樹脂可不具有玻璃,並流入該模具結構234中,界定於該等間隙中所需要的尺寸。 In some embodiments, a fluid phase material such as a thermosetting resin or a thermoplastic resin may be used, and a preferred material instead of a pre-hardened C-stage material such as FR-4 may be used. The fluid resin may have no glass and flow into the mold structure 234 to define the desired dimensions in the gaps.

第四圖為在一成層程序期間,該板狀基板220之一部份各種元件的橫斷面。如同所示,該覆蓋層222係相對於該基礎層224堆疊。更具體的,該基礎層224之該第一側252係與該覆蓋層222之該層側262介接。該等介電元件226係位於該等對應元件凹穴244之中,並具有與該覆蓋層222層側262介接之個別元件面268。在所述具體實施例中,該厚度尺寸256、258實質上係與該平台240高度270相等。在其他具體實施例中,該厚度尺寸258與該厚度尺寸256係可大於或小於該基礎層224具備的高度270,而該等介電元件226仍具有連接至該覆蓋層222的能力。 The fourth figure is a cross section of various components of the plate substrate 220 during a layering process. As shown, the cover layer 222 is stacked relative to the base layer 224. More specifically, the first side 252 of the base layer 224 interfaces with the layer side 262 of the cover layer 222. The dielectric elements 226 are located in the corresponding component pockets 244 and have individual component faces 268 that interface with the cover layer 222 layer side 262. In the particular embodiment, the thickness dimensions 256, 258 are substantially equal to the height 270 of the platform 240. In other embodiments, the thickness dimension 258 and the thickness dimension 256 can be greater or less than the height 270 of the base layer 224, and the dielectric elements 226 still have the ability to be coupled to the cover layer 222.

該覆蓋與基礎層222、224於相對於彼此堆疊時可以預定方式對準。該第一與第二模具結構232、234之一或兩者係可包含多數板對準特徵(未圖示),該等板對準特徵係與該覆蓋與基礎層222、224接合。例如,該第二模具結構234可以包含多數個支柱(未圖示),該等支柱係由該基礎層224與該覆蓋層222之多數對應通道(未圖示)所接收。該等通道可以位沿著該覆蓋與基礎層222、224及/或朝向該覆蓋與基礎層222、224的中間處。 The cover and the base layers 222, 224 can be aligned in a predetermined manner when stacked relative to one another. One or both of the first and second mold structures 232, 234 may include a plurality of panel alignment features (not shown) that engage the cover and base layers 222, 224. For example, the second mold structure 234 can include a plurality of struts (not shown) that are received by the base layer 224 and a plurality of corresponding channels (not shown) of the cover layer 222. The channels may be located along the cover and base layers 222, 224 and/or toward the middle of the cover and base layers 222, 224.

該覆蓋與基礎層222、224於一成層程序期間可以彼此連接。例如,B階段或半固化薄片(未圖示)可以位沿著該覆蓋與基礎層222、224之間之一介面223與該覆蓋層222與該等介電元件226之間之一介面227。當該覆蓋層222與該基礎層224相對 於彼此堆疊時,該等薄片可成為該覆蓋及/或該基礎層222、224之部分。該等薄片可以進行熱處理與壓力處理,以使該等薄片硬化,並將該基礎層224與該等介電元件226連接(例如,黏合)至該覆蓋層222。如果需要時可以抽真空。因此,即使該基礎層224與該等介電元件226係為分離或獨立組件,但該基礎層224與該等介電元件226係可以同時(例如,在該相同成層程序期間)連接至該覆蓋層222。然而,上述僅為用於將該覆蓋及基礎層222、224與該介電元件226彼此成層之一示例方法。可以使用類似或不同的程序將該等元件連接於一起。 The overlay and base layers 222, 224 can be connected to each other during a layering procedure. For example, a B-stage or semi-cured sheet (not shown) may be positioned along one of the interface 223 between the cover and base layers 222, 224 and one of the interfaces 227 between the cover layer 222 and the dielectric elements 226. When the cover layer 222 is opposite the base layer 224 The sheets may become part of the cover and/or the base layers 222, 224 when stacked on each other. The sheets may be heat treated and pressure treated to harden the sheets and the base layer 224 is joined (e.g., bonded) to the cover layer 222. Vacuum can be applied if needed. Thus, even if the base layer 224 and the dielectric elements 226 are separate or separate components, the base layer 224 and the dielectric elements 226 can be connected to the overlay simultaneously (eg, during the same layering procedure). Layer 222. However, the above is merely an exemplary method for layering the cover and base layers 222, 224 and the dielectric element 226 to each other. These elements can be connected together using similar or different procedures.

第五圖與第六圖係為該板狀基板220之一放大圖,其詳細圖示該基礎層224與該等介電元件226連接至該覆蓋層222之後,一材料孔洞250的情形。第五圖為該板狀基板220該部分的橫斷面,而第六圖為其上視平面圖。應該注意第五圖與第六圖係相對於第三圖與第四圖倒轉。如同所述,於提供該介電元件226至該材料孔洞250時形成一芯支撐通道272。該芯支撐通道272存在於該介電元件226與該基礎層224之間。該芯支撐通道272係由該內部表面276-278所界定,其包含該基礎層224之一面向內表面276、該介電元件226之一面向外表面277與由該覆蓋層222所界定之一底部表面278。該芯支撐通道272寬度尺寸280(第五圖)係於該面向內表面276與該面向外表面277之間延伸。在某些具體實施例中,穿過該芯支撐通道272之該寬度尺寸280實質上係完全相同。然而在其他具體實施例中,該芯支撐通道272之寬度尺寸280可以變化。 The fifth and sixth figures are enlarged views of the plate substrate 220, which illustrate in detail the case of a material hole 250 after the base layer 224 and the dielectric elements 226 are connected to the cover layer 222. The fifth drawing is a cross section of the portion of the plate substrate 220, and the sixth drawing is a top plan view thereof. It should be noted that the fifth and sixth figures are reversed with respect to the third and fourth figures. As described, a core support channel 272 is formed when the dielectric component 226 is provided to the material aperture 250. The core support channel 272 is present between the dielectric element 226 and the base layer 224. The core support channel 272 is defined by the inner surface 276-278 and includes one of the base layer 224 facing the inner surface 276, one of the dielectric elements 226 facing the outer surface 277 and being defined by the cover layer 222 Bottom surface 278. The core support channel 272 has a width dimension 280 (fifth view) extending between the inwardly facing surface 276 and the outwardly facing surface 277. In some embodiments, the width dimension 280 through the core support channel 272 is substantially identical. In other embodiments, however, the width dimension 280 of the core support channel 272 can vary.

該芯支撐通道272係經配置以於其中具有一磁芯288(於第七圖圖示),該磁芯288可以與該磁芯200(第二圖)相同。該芯支撐通道272繞著該介電元件226周圍延伸。在所述具體實施例中,該芯支撐通道272繞著該介電元件226於實質為圓形的路徑中完全延伸,因此該芯支撐通道272係為甜甜圈形狀。然而,並不 限定為第五圖與第六圖所示之具體實施例。當在此使用時,用詞「繞著周圍」包含該芯支撐通道272實質上只繞著該介電元件226之一部分延伸。例如,該芯支撐通道272可以形成一C形弧形,其繞著該介電元件226至少大約延伸一半。此外,用詞「繞著周圍」並不需要係為一圓形路徑或曲線路徑,而是可以包含其他形狀。例如,該芯支撐通道272可以繞著該介電元件226,沿著為方形、矩形或多邊形的路徑延伸。 The core support channel 272 is configured to have a magnetic core 288 (illustrated in the seventh diagram) therein, which may be identical to the magnetic core 200 (second figure). The core support channel 272 extends around the dielectric element 226. In the particular embodiment, the core support channel 272 extends completely around the dielectric element 226 in a substantially circular path such that the core support channel 272 is in the shape of a donut. However, not The specific embodiments shown in the fifth and sixth figures are defined. As used herein, the term "around the circumference" includes the core support channel 272 extending substantially only around a portion of the dielectric element 226. For example, the core support channel 272 can form a C-shaped arc that extends at least about half about the dielectric element 226. In addition, the word "around the circumference" does not need to be a circular path or a curved path, but may include other shapes. For example, the core support channel 272 can extend around the dielectric element 226 along a path that is square, rectangular or polygonal.

在某些情況中,在該覆蓋與基礎層222、224彼此連接之後,該芯支撐通道272可能不適合接收該磁芯288。例如,該芯支撐通道272可能具有不適當的尺寸或可能在該芯支撐通道272中存在不想要的材料,像是在成層期間流入至該芯支撐通道272的樹脂,或是具有因為移除程序(例如,衝壓)所造成的不平整表面。在所述情況中,可蝕刻或鑽除(或磨邊)該芯支撐通道272以適當修整該芯支撐通道272形狀,或去除不想要的材料。例如,該面向內表面276、該面向外表面277或該底部表面278之至少之一係具有從其移除之基板材料。在某些具體實施例中,該寬度尺寸280可能因材料移除程序而增加,像是因鑽除、蝕刻及其他類似程序。 In some cases, the core support channel 272 may not be suitable for receiving the magnetic core 288 after the cover and base layers 222, 224 are connected to each other. For example, the core support channel 272 may have an improper size or may have unwanted material in the core support channel 272, such as resin flowing into the core support channel 272 during layering, or having a removal procedure An uneven surface caused by (for example, stamping). In such cases, the core support channel 272 can be etched or drilled (or edging) to properly trim the core support channel 272 shape, or to remove unwanted material. For example, at least one of the inwardly facing surface 276, the outwardly facing surface 277, or the bottom surface 278 has a substrate material removed therefrom. In some embodiments, the width dimension 280 may increase due to material removal procedures, such as by drilling, etching, and the like.

第七圖為該板狀基板220之一放大橫斷面,其圖示位於該芯支撐通道272中之該磁芯288。該芯支撐通道272可以包含內部與外部對準特徵282、284,該等對準特徵至少部分界定該材料孔洞250或該芯支撐通道272。該等對準特徵282、284可由以上敘述之材料移除程序(例如,利用蝕刻或鑽除該內部表面276-278的方式)或於個別的材料移除程序形成。在某些情況中,只蝕刻或鑽除該內部表面276-278之一(或多數)部分,因此該面向內表面276與該面向外表面277之部分便可保持來自形成該等材料孔洞250之程序的表面品質。例如,至少該面向內表面276之一部份可為從衝壓該基礎層224以形成該材料孔洞250時所形成之一剪切表面,而該面向內表面276之另一部份則可為一鑽除表面。 The seventh figure is an enlarged cross section of the plate substrate 220, which illustrates the magnetic core 288 located in the core support channel 272. The core support channel 272 can include internal and external alignment features 282, 284 that at least partially define the material aperture 250 or the core support channel 272. The alignment features 282, 284 may be formed by the material removal procedures described above (e.g., by etching or drilling the interior surfaces 276-278) or by individual material removal procedures. In some cases, only one (or a majority) portion of the inner surface 276-278 is etched or drilled, such that the portion facing the inner surface 276 and the outwardly facing surface 277 can remain from the hole 250 forming the material. The surface quality of the program. For example, at least one portion of the inwardly facing surface 276 can be one of the shearing surfaces formed when the base layer 224 is stamped to form the material aperture 250, and the other portion of the inwardly facing surface 276 can be a Drill the surface.

該等對準特徵282、284的形狀係可在將該磁芯288放置於該芯支撐通道272之中時,使該磁芯288具有中心定位作用的效果。該等對準特徵282、284可以朝向該磁芯288延伸。在所述具體實施例中,該對準特徵282包含於該面向外表面277與該底部表面278之間延伸之一斜面283。該對準特徵284包含於該面向內表面276與該底部表面278之間延伸之一斜面285。然而在其他具體實施例中,該等對準特徵282、284可以具有其他配置。 The alignment features 282, 284 are shaped to provide the core 288 with a central positioning effect when the magnetic core 288 is placed in the core support channel 272. The alignment features 282, 284 can extend toward the magnetic core 288. In the particular embodiment, the alignment feature 282 includes a ramp 283 extending between the outwardly facing surface 277 and the bottom surface 278. The alignment feature 284 includes a slope 285 extending between the inwardly facing surface 276 and the bottom surface 278. In other embodiments, however, the alignment features 282, 284 can have other configurations.

該等對準特徵282、284可減少製造程序的公差,此公差係與該磁芯288的定位有關。該等對準特徵282、284可使個別間隙290、291存在於該磁芯288與該面向內表面276及該面向外表面277之間。在該磁芯288與該底部表面278之間也可具有一間隙292。在後續程序中,該等間隙290-292可促成封裝材料的流動,並允許該磁芯288於與成層相關的受熱與受壓期間產生膨脹及/或收縮。 The alignment features 282, 284 can reduce the tolerances of the manufacturing process associated with the positioning of the magnetic core 288. The alignment features 282, 284 can cause individual gaps 290, 291 to exist between the core 288 and the inwardly facing surface 276 and the outwardly facing surface 277. There may also be a gap 292 between the core 288 and the bottom surface 278. In subsequent procedures, the gaps 290-292 may contribute to the flow of the encapsulating material and allow the magnetic core 288 to expand and/or contract during heating and compression associated with the layering.

第八圖為一平面式板狀基板320各種元件以及一板製造組件330的分解圖,該板製造組件330可用於製造該板狀基板320。如圖所示,該板狀基板320可包含一覆蓋層322與一或多個基礎層324A、324B。該覆蓋層322與該等基礎層324A、324B可包含如以上針對該覆蓋層222(第三圖)與該基礎層224(第三圖)所敘述之相同基板材料,及/或以相同方式製造。該基礎層324A具有相對層側340A、342A,而該基礎層324B具有相對層側340B、342B。該覆蓋層322具有相對層側344、346。 The eighth drawing is an exploded view of various components of a planar plate substrate 320 and a plate manufacturing assembly 330 that can be used to fabricate the plate substrate 320. As shown, the plate substrate 320 can include a cover layer 322 and one or more base layers 324A, 324B. The cover layer 322 and the base layers 324A, 324B may comprise the same substrate material as described above for the cover layer 222 (third diagram) and the base layer 224 (third diagram), and/or fabricated in the same manner . The base layer 324A has opposing layer sides 340A, 342A, and the base layer 324B has opposing layer sides 340B, 342B. The cover layer 322 has opposing layer sides 344, 346.

該每一個基礎層324A、324B都包含多數材料孔洞348、350。該等材料孔洞348、350完全延伸穿過該對應基礎層324A或324B。在所述具體實施例中,該等基礎層324A、324B分別包含多數個材料孔洞成對348A、350A及348B、350B。在所述具體實施例中,該等材料孔洞348A、350A與該等材料孔洞348B、350B係為半圓形,並面向該成對的另一材料孔洞。然而在其他具體實施 例中,可以使用幾乎完全延伸之一單一材料孔洞。例如,該單一材料孔洞可以為C形,或具有幾乎為一完整圓形的路徑。該等材料孔洞348A、350A與348B、350B可以利用以上針對該等材料孔洞250(第三圖)所敘述的相同方式製造。例如,可以衝壓、鑽除及/或蝕刻等方式形成該等材料孔洞348A、350A與348B、350B。沿著該基礎層324A之該等材料孔洞348A、350A可以與沿著該基礎層324B之該等材料孔洞348B、350B具有相同的型態。因此,當該等基礎層324A、324B係相對於彼此堆疊時,該基礎層324A之該材料孔洞348A係與該基礎層324B之該材料孔洞348B對準,而該基礎層324A之該材料孔洞350A係與該基礎層324B之該材料孔洞350B對準。 Each of the base layers 324A, 324B includes a plurality of material holes 348, 350. The material holes 348, 350 extend completely through the corresponding base layer 324A or 324B. In the particular embodiment, the base layers 324A, 324B each include a plurality of material hole pairs 348A, 350A and 348B, 350B. In the particular embodiment, the material holes 348A, 350A and the material holes 348B, 350B are semi-circular and face the pair of other material holes. However in other implementations In one example, a single material hole that is almost completely extended can be used. For example, the single material hole can be C-shaped or have a path that is almost a complete circle. The material holes 348A, 350A and 348B, 350B can be fabricated in the same manner as described above for the material holes 250 (third figure). For example, the material holes 348A, 350A and 348B, 350B may be formed by stamping, drilling, and/or etching. The material holes 348A, 350A along the base layer 324A may have the same pattern as the material holes 348B, 350B along the base layer 324B. Thus, when the base layers 324A, 324B are stacked relative to each other, the material holes 348A of the base layer 324A are aligned with the material holes 348B of the base layer 324B, and the material holes 350A of the base layer 324A The material is aligned with the material hole 350B of the base layer 324B.

該等基礎層324A、324B之該基板材料可包含或由一介電材料所形成,像是適用於一印刷電路板(PCB)之玻璃填充環氧樹脂(例如,FR-4)、熱固性材料或熱塑性材料。該等基板材料可為完全硬化基板與未硬化B階段材料的交替層,除非該等材料係為熱塑性或流體階段的熱固性材料。該等基礎層之厚度尺寸可為單一厚層或許多半固化薄片或具有類似型態的交替層。可以使用其他的剛性或半剛性材料。 The substrate material of the base layers 324A, 324B may comprise or be formed of a dielectric material such as a glass filled epoxy (eg, FR-4) suitable for a printed circuit board (PCB), a thermoset material, or Thermoplastic material. The substrate material can be an alternating layer of fully hardened substrate and uncured B-stage material unless the materials are thermoplastic or fluid phase thermoset materials. The thickness of the base layer can be a single thick layer or a plurality of semi-cured sheets or alternating layers of similar type. Other rigid or semi-rigid materials can be used.

當形成該材料孔洞成對348A、350A時,也可形成一對應基礎延伸部352A。當形成該材料孔洞成對348B、350B時,也可形成一對應基礎延伸部352B。在所述具體實施中,該每一個基礎延伸部352A、352B都分別於該等對應材料孔洞成對348A、350A及348B、350B之間延伸。該等材料孔洞348A、350A係利用該基礎延伸部352A彼此分離,而該等材料孔洞348B、350B則利用該基礎延伸部352B彼此分離。然而,當只形成一單一材料孔洞時也可以形成一基礎延伸部。如以上敘述,例如如果該材料孔洞係為C形或如果該材料孔洞幾乎形成一完整圓形時,便可由該單一材料孔洞界定一基礎延伸部。 When the material holes are formed in pairs 348A, 350A, a corresponding base extension 352A can also be formed. When the material hole pairs 348B, 350B are formed, a corresponding base extension 352B can also be formed. In the specific implementation, each of the base extensions 352A, 352B extends between the corresponding pair of material holes 348A, 350A and 348B, 350B, respectively. The material holes 348A, 350A are separated from each other by the base extension 352A, and the material holes 348B, 350B are separated from each other by the base extension 352B. However, a base extension can also be formed when only a single material hole is formed. As described above, for example, if the material hole is C-shaped or if the material hole forms almost a complete circle, a base extension can be defined by the single material hole.

如圖所示,該板製造組件330可以包含第一與第二模具或擠壓結構332、334。與該板製造組件230(第三圖)相同,該第一與第二模具結構332、334包含剛性材料,並經配置以抵抗伴隨該電路板成層程序所產生的壓力與熱。該第一與第二模具結構332、334分別包含接合表面336、338,該等接合表面336、338係經配置以與該板狀基板320之該等元件介接並將其擠壓於一起。該等接合表面336、338彼此面對,而該覆蓋層322與該等基礎層324A、324B則位於其之間。在所述具體實施例中,該等接合表面336、338實質上係為平面。 As shown, the panel manufacturing assembly 330 can include first and second mold or extruded structures 332, 334. As with the board fabrication assembly 230 (figure 3), the first and second mold structures 332, 334 comprise a rigid material and are configured to resist the pressure and heat associated with the board layering process. The first and second mold structures 332, 334 respectively include engagement surfaces 336, 338 that are configured to interface with the elements of the plate substrate 320 and squeeze them together. The joint surfaces 336, 338 face each other with the cover layer 322 and the base layers 324A, 324B therebetween. In the particular embodiment, the engagement surfaces 336, 338 are substantially planar.

該覆蓋與基礎層322、324A、324B可以利用以上針對該覆蓋與基礎層222、224(第三圖)所敘述之相同方法彼此連接。例如,該覆蓋與基礎層322、324A、324B可以在一成層程序期間彼此連接。該覆蓋與基礎層322、324A、324B可以相對於彼此堆疊並對準,因此該基礎層324A之每一個基礎延伸部352A都與該基礎層324B之一對應基礎延伸部352B對準。在堆疊之前,可以定位B階段或半固化薄片(未圖示),因此一薄片係可位沿著該覆蓋層322與該基礎層324A之間之一介面,而另一薄片則為沿著該等基礎層324A、324B之間之一介面。該等薄片可以進行熱處理與壓力處理,以使該等薄片硬化,並將該基礎層324A、324B彼此連接(例如,黏合),及將該覆蓋層322連接至該基礎層324A。在此時,該等基礎層324A、324B之該等已對準基礎延伸部352A、352B便可彼此黏合。 The overlay and base layers 322, 324A, 324B can be connected to each other using the same method described above for the overlay and base layers 222, 224 (third map). For example, the overlay and base layers 322, 324A, 324B can be connected to one another during a layering process. The cover and base layers 322, 324A, 324B can be stacked and aligned relative to one another such that each of the base extensions 352A of the base layer 324A is aligned with a corresponding base extension 352B of the base layer 324B. Prior to stacking, a B-stage or semi-cured sheet (not shown) can be positioned so that one sheet can be positioned along one interface between the cover layer 322 and the base layer 324A, while another sheet is along the One interface between the base layers 324A, 324B. The sheets may be heat treated and pressure treated to harden the sheets, and the base layers 324A, 324B are joined to each other (e.g., bonded), and the cover layer 322 is attached to the base layer 324A. At this point, the aligned base extensions 352A, 352B of the base layers 324A, 324B can be bonded to each other.

第九圖與第十圖分別包含在一材料移除操作之前,該板狀基板320之一平面圖與橫斷面。第九圖與第十圖係相對於第八圖倒轉,因此第九圖為該層側342B之平面圖,而第十圖則具有位於該圖示底部處之該覆蓋層322。針對第十圖,該等基礎層324A、324B之該等基礎延伸部352A、352B係彼此堆疊並連接。在一示例具體實施例中,該基礎延伸部352A包含一介電元件354A,該介 電元件354A透過一或多個接點356A與該基礎層324A的剩餘部分連接。同樣的,該基礎延伸部352B包含一介電元件354B,該介電元件354B透過一或多個接點356B與該基礎層324B的剩餘部分連接。為了描述的目的,在第九圖中也圖示用於一基礎延伸部352B之該介電元件354B與該等接點356B。 The ninth and tenth views respectively include a plan view and a cross section of the plate substrate 320 before a material removal operation. The ninth and tenth views are reversed with respect to the eighth figure, so that the ninth figure is a plan view of the layer side 342B, and the tenth figure has the cover layer 322 at the bottom of the figure. For the tenth figure, the base extensions 352A, 352B of the base layers 324A, 324B are stacked and connected to each other. In an exemplary embodiment, the base extension 352A includes a dielectric component 354A. Electrical component 354A is coupled to the remainder of base layer 324A via one or more contacts 356A. Similarly, the base extension 352B includes a dielectric component 354B that is coupled to the remainder of the base layer 324B via one or more contacts 356B. For purposes of description, the dielectric element 354B for a base extension 352B and the contacts 356B are also illustrated in the ninth diagram.

針對第十圖,在該覆蓋與基礎層322、324A、324B彼此連接之後,可透過一材料移除操作移除該等接點356A、356B。做為一特定示例,可如第十圖中所示將一鑽頭插入至兩對準材料孔洞348之中,並繞著一路徑磨邊,以移除該等接點356A、356B。在此情況中,因為從該每一基礎層324A、324B移除兩接點,因此總共移除了四個接點356A、356B。 For the tenth figure, after the cover and base layers 322, 324A, 324B are connected to each other, the contacts 356A, 356B can be removed by a material removal operation. As a specific example, a drill bit can be inserted into the two alignment material holes 348 as shown in the tenth figure and edged around a path to remove the contacts 356A, 356B. In this case, since the two contacts are removed from each of the base layers 324A, 324B, a total of four contacts 356A, 356B are removed.

第十一圖顯示與第十圖相同視角,但圖示該等接點356A、356B(第十圖)已被移除的情況。針對第十一圖,繞著該堆疊介電元件354A、354B係存在一芯支撐通道372。當該等介電元件354A、354B係如第十一圖所示堆疊並連接時,該等介電元件354A、354B可被視為由該芯支撐通道372所圍繞之一單一介電元件373。該芯支撐通道372可以與該芯支撐通道272(第五圖)相同,並繞著該介電元件373周圍延伸。在移除該等接點356A、356B之後,該等材料孔洞348、350(第八圖)便成為一單一材料孔洞374。 The eleventh figure shows the same viewing angle as the tenth figure, but shows that the contacts 356A, 356B (thirth figure) have been removed. For the eleventh figure, a core support channel 372 is present around the stacked dielectric elements 354A, 354B. When the dielectric elements 354A, 354B are stacked and connected as shown in FIG. 11, the dielectric elements 354A, 354B can be considered as a single dielectric element 373 surrounded by the core support channel 372. The core support channel 372 can be identical to the core support channel 272 (fifth figure) and extends around the dielectric element 373. After removing the contacts 356A, 356B, the material holes 348, 350 (eighth view) become a single material hole 374.

該材料孔洞374可能不具有適當尺寸,且可能於其中具有其他不想要的材料,像是顆粒376。該等顆粒376可能係於成層期間由流動至該材料孔洞374之樹脂所形成。該等顆粒376也可能是製造該等材料孔洞348、350(第八圖)之製造程序的一種結果。為了移除該等顆粒376,可進一步蝕刻或鑽除由該芯支撐通道372所界定之多數表面,以適當修整該芯支撐通道372及該材料孔洞374的形狀,或用以移除任何不想要的材料。在替代具體實施例中,當該等接點356A、356B被移除時,也移除該等顆粒376(也 就是,在相同基板移除期間移除)。 The material holes 374 may not be of appropriate size and may have other unwanted materials therein, such as particles 376. The particles 376 may be formed by the resin flowing to the material holes 374 during the layering. The particles 376 may also be a result of the manufacturing process for making the holes 348, 350 (Fig. 8) of the materials. To remove the particles 376, most of the surface defined by the core support channel 372 can be further etched or drilled to properly trim the shape of the core support channel 372 and the material hole 374, or to remove any unwanted s material. In an alternative embodiment, the particles 376 are also removed when the contacts 356A, 356B are removed (also That is, removed during the same substrate removal).

第八圖至第十一圖係描述兩基礎層324A、324B彼此堆疊並連接之一具體實施例。然而在其他具體實施例中,可以只使用單一基礎層,或替代的可以將多於兩個基礎層相對於彼此堆疊。此外在其他具體實施例中,該每一個基礎延伸部都可以包含單一接點。該等基礎層係經配置為相同,因此該等接點係針對於彼此進行堆疊。替代的,該等接點可以具有不同位置,因此該等接點並不直接堆疊於彼此上方。在所述具體實施例中,該鑽頭可能只需要在同一時間移除單一接點,而非例如在同一時間移除兩堆疊接點。 The eighth to eleventh drawings depict one embodiment in which the two base layers 324A, 324B are stacked and connected to each other. In other embodiments, however, only a single base layer may be used, or alternatively more than two base layers may be stacked relative to one another. Further in other embodiments, each of the base extensions can include a single joint. The base layers are configured to be identical, so the contacts are stacked for each other. Alternatively, the contacts may have different positions, so the contacts are not stacked directly above each other. In the particular embodiment, the drill bit may only need to remove a single joint at the same time, rather than removing the two stack contacts, for example, at the same time.

第十二圖為根據一具體實施例所形成之一平面式板狀基板420的分解圖。該板狀基板420包含一覆蓋層422與一基礎層424。該基礎層424具有相對第一與第二層側440、442,並包含延伸穿過其之間的多數材料孔洞450。該等材料孔洞450可如以上針對該等材料孔洞150(第三圖)與348、350(第八圖)之方式所形成。在所述具體實施例中,該覆蓋層422為不具有孔洞之連續薄片。該覆蓋與基礎層422、424可由基板材料所形成,像是以上針對該覆蓋層222(第三圖)與該基礎層224(第三圖)所敘述之基板材料。該覆蓋與基礎層422、424可如以上敘述於一成層程序中連接於一起。該基板材料可包含或由一介電材料所形成,像是適用於一印刷電路板(PCB)之玻璃填充環氧樹脂(例如,FR-4)、熱固性材料或熱塑性材料。該等基板材料可為完全硬化基板與未硬化B階段材料的交替層,除非該等材料係為熱塑性或流體階段的熱固性材料。該等基礎層之厚度尺寸可為單一厚層或許多半固化薄片或具有類似型態的交替層。可以使用其他的剛性或半剛性材料。 Figure 12 is an exploded view of a planar plate substrate 420 formed in accordance with an embodiment. The plate substrate 420 includes a cover layer 422 and a base layer 424. The base layer 424 has opposing first and second layer sides 440, 442 and includes a plurality of material apertures 450 extending therethrough. The material holes 450 can be formed as described above for the material holes 150 (third image) and 348, 350 (eighth view). In the particular embodiment, the cover layer 422 is a continuous sheet that does not have holes. The cover and base layers 422, 424 may be formed from a substrate material such as the substrate material described above for the cover layer 222 (third figure) and the base layer 224 (third figure). The overlay and base layers 422, 424 can be joined together in a layering procedure as described above. The substrate material may comprise or be formed from a dielectric material such as a glass filled epoxy (e.g., FR-4) suitable for use in a printed circuit board (PCB), a thermoset material, or a thermoplastic material. The substrate material can be an alternating layer of fully hardened substrate and uncured B-stage material unless the materials are thermoplastic or fluid phase thermoset materials. The thickness of the base layer can be a single thick layer or a plurality of semi-cured sheets or alternating layers of similar type. Other rigid or semi-rigid materials can be used.

第十三圖圖示一平面式電子裝置416之一部份的橫斷面,該平面式電子裝置416包含該板狀基板420。在形成該板狀基板420之後,可於該材料孔洞450中放置一磁芯488。該磁芯488可具有圓形或類卵形形狀,其環繞一芯部孔穴490。該磁芯488係 穿過該第二側422插入至該材料孔洞450之中。雖然並未圖示,該基礎層424及/或該覆蓋層422可包含多數對準特徵,該等對準特徵係經配置以將該磁芯488支撐於該材料孔洞450中一預定位置。該等對準特徵可以上述相同方式,利用鑽除或蝕刻該基礎層424及/或該覆蓋層422之基板材料方式所形成。 The thirteenth diagram illustrates a cross-section of a portion of a planar electronic device 416 that includes the plate substrate 420. After the plate substrate 420 is formed, a magnetic core 488 can be placed in the material hole 450. The core 488 can have a circular or oval-like shape that surrounds a core aperture 490. The core 488 Inserted through the second side 422 into the material aperture 450. Although not shown, the base layer 424 and/or the cover layer 422 can include a plurality of alignment features that are configured to support the magnetic core 488 in a predetermined location in the material aperture 450. The alignment features can be formed in the same manner as described above by drilling or etching the base layer 424 and/or the substrate material of the cover layer 422.

一旦將該磁芯488放置於該材料孔洞450之中,便於該材料孔洞450之中沈積一彈性與非傳導性封裝材料472。該封裝材料472流動至該芯部孔穴490之中,並包覆該磁芯488。該封裝材料472可進行硬化,因此該封裝材料472變硬,並完全圍繞該磁芯488。據此,便於該芯部孔穴490中形成一介電元件491。 Once the magnetic core 488 is placed in the material hole 450, a resilient and non-conductive encapsulating material 472 is deposited in the material hole 450. The encapsulating material 472 flows into the core cavity 490 and encapsulates the magnetic core 488. The encapsulating material 472 can be hardened such that the encapsulating material 472 hardens and completely surrounds the magnetic core 488. Accordingly, a dielectric element 491 is formed in the core cavity 490.

如第十三圖所示,可於該第二側442形成另一基板層474。接著可利用絕緣黏著方式將傳導層476、478分別黏合至該基板層474與該覆蓋層422。接著穿過該上方傳導層476、該基板層474、該基礎層424、該覆蓋層422與該下方傳導層478鑽出多數穿過孔洞480。接著清潔該等穿過孔洞480、482,並利用一傳導材料進行電鍍,以提供多數傳導貫通孔484、486。接著蝕刻該等傳導層476、478以沿著該基板層474提供多數上方導體492,並沿著該覆蓋層422提供多數下方導體494。 As shown in the thirteenth figure, another substrate layer 474 can be formed on the second side 442. Conductive layers 476, 478 can then be bonded to the substrate layer 474 and the cover layer 422, respectively, by an insulative adhesion. The plurality of through holes 480 are then drilled through the upper conductive layer 476, the substrate layer 474, the base layer 424, the cover layer 422, and the lower conductive layer 478. The through holes 480, 482 are then cleaned and plated with a conductive material to provide a plurality of conductive through vias 484, 486. The conductive layers 476, 478 are then etched to provide a plurality of upper conductors 492 along the substrate layer 474 and a plurality of lower conductors 494 are provided along the cover layer 422.

雖然並未圖示,可以對該平面式電子裝置416增加其他修改及/或特徵。例如,可以接著如第十三圖所示以一絕緣材料塗敷該電子裝置416。 Although not shown, other modifications and/or features may be added to the planar electronic device 416. For example, the electronic device 416 can then be coated with an insulating material as shown in FIG.

第十四圖為根據一具體實施例所形成一平面式板狀基板520的分解圖。該板狀基板520包含一覆蓋層522與一基礎層524。該基礎層524具有相對第一與第二層側540、542,並包含延伸穿過其之間的多數材料孔洞550。該覆蓋與基礎層522、524係與第十三圖之該覆蓋與基礎層422、424類似或相同。然而,該覆蓋層522可具有完全延伸穿過該覆蓋層522之多數覆蓋孔洞551。該等覆蓋孔洞551的形狀與位置可與該基礎層524之該等材料孔洞 550類似。更具體的,該等覆蓋孔洞551之尺寸與形狀係較小於該等材料孔洞550的尺寸。該覆蓋與基礎層522、524可透過如以上敘述之一成層程序彼此連接。 Figure 14 is an exploded view of a planar plate substrate 520 formed in accordance with an embodiment. The plate substrate 520 includes a cover layer 522 and a base layer 524. The base layer 524 has opposing first and second layer sides 540, 542 and includes a plurality of material apertures 550 extending therethrough. The cover and base layers 522, 524 and the cover of the thirteenth view are similar or identical to the base layers 422, 424. However, the cover layer 522 can have a plurality of cover apertures 551 that extend completely through the cover layer 522. The shape and location of the cover holes 551 may be the same as the holes of the material of the base layer 524 The 550 is similar. More specifically, the cover holes 551 are smaller in size and shape than the holes 550 of the materials. The overlay and base layers 522, 524 can be connected to one another via a layering procedure as described above.

第十五圖圖示一平面式電子裝置516之一部份的橫斷面,該平面式電子裝置516包含該板狀基板520。如同所示,該覆蓋層522可具有一對準特徵523。例如,該對準特徵523可為界定該覆蓋孔洞551之一邊緣525。在特定具體實施例中,該邊緣525係形成為具有一斜面527。可透過鑽除及/或蝕刻形成該邊緣525。該邊緣525之尺寸係經配置以將一磁芯588支撐於一預定位置中。 The fifteenth diagram illustrates a cross-section of a portion of a planar electronic device 516 that includes the plate substrate 520. As shown, the cover layer 522 can have an alignment feature 523. For example, the alignment feature 523 can define an edge 525 of the cover aperture 551. In a particular embodiment, the edge 525 is formed to have a bevel 527. The edge 525 can be formed by drilling and/or etching. The edge 525 is sized to support a magnetic core 588 in a predetermined position.

可於一成層程序期間將包含一連續基板材料薄片之基板層575連接至該覆蓋層522,藉此覆蓋該覆蓋孔洞551。該磁芯588可穿過該第二側542插入至該材料孔洞550之中,並定位於該斜面527上。該磁芯588可以具有圓形或類卵形形狀,其環繞一芯部孔穴590。 A substrate layer 575 comprising a sheet of continuous substrate material can be attached to the cover layer 522 during a layering process, thereby covering the cover aperture 551. The magnetic core 588 can be inserted into the material aperture 550 through the second side 542 and positioned on the slope 527. The core 588 can have a circular or oval-like shape that surrounds a core aperture 590.

在該磁芯588位於該材料孔洞550的情況下,可以在該材料孔洞550中沈積一彈性與非傳導性封裝材料572。該封裝材料572流動至該芯部孔穴590之中,並包覆該磁芯588。當該封裝材料572硬化時,便於該芯部孔穴590中形成一介電元件591。 Where the core 588 is located in the material aperture 550, a resilient and non-conductive encapsulating material 572 can be deposited in the material aperture 550. The encapsulating material 572 flows into the core cavity 590 and encloses the magnetic core 588. When the encapsulating material 572 is hardened, a dielectric member 591 is formed in the core cavity 590.

如第十五圖所示,可於該第二側542形成另一基板層574。接著可以利用絕緣黏著方式將傳導層576、578分別黏合至該基板層574與該基板層575。接著穿過該上方傳導層576、該基板層574、該基礎層524、該覆蓋層522、該基板層575與該下方傳導層578鑽出多數穿過孔洞580。接著穿過該上方傳導層576、該基板層574、該基礎層524、該介電元件591、該基板層575與該下方傳導層578鑽出多數穿過孔洞582。接著清潔該等穿過孔洞580、582,並利用一傳導材料進行電鍍,以提供多數傳導貫通孔584、586。接著蝕刻該等傳導層576、578以沿著該基板層574提供多數上方導體592,並沿著該基板層575提供多數下方導體594。 As shown in the fifteenth figure, another substrate layer 574 can be formed on the second side 542. Conductive layers 576, 578 can then be bonded to the substrate layer 574 and the substrate layer 575, respectively, by an insulative adhesion. A plurality of through holes 580 are then drilled through the upper conductive layer 576, the substrate layer 574, the base layer 524, the cover layer 522, the substrate layer 575, and the lower conductive layer 578. A plurality of through holes 582 are then drilled through the upper conductive layer 576, the substrate layer 574, the base layer 524, the dielectric element 591, the substrate layer 575, and the lower conductive layer 578. The through holes 580, 582 are then cleaned and plated using a conductive material to provide a plurality of conductive through vias 584, 586. The conductive layers 576, 578 are then etched to provide a plurality of upper conductors 592 along the substrate layer 574 and a plurality of lower conductors 594 are provided along the substrate layer 575.

第十四圖與第十五圖係描述在該覆蓋層522與該基礎層524一起成層之前,該覆蓋層522係具有多數覆蓋孔洞551之一具體實施例。在其他具體實施例中,該覆蓋層522於成層之前可不具有任何覆蓋孔洞551。取而代之的是,該覆蓋層522與該基礎層524可以一起成層,以形成一種類似於該板狀基板420(第十二圖)之結構。一旦連接於一起,便於像是以上敘述之一基板移除操作(例如,衝壓、鑽除或蝕刻)中,形成類似於該等覆蓋孔洞551之多數覆蓋孔洞。在某些具體實施例中,可在該基板移除程序期間形成該斜面527。接著可以如以上針對第十四圖與第十五圖敘述之相同方式進行該板狀基板520的加工。 The fourteenth and fifteenth drawings depict an embodiment in which the cover layer 522 has a plurality of cover holes 551 before the cover layer 522 is layered with the base layer 524. In other embodiments, the cover layer 522 may not have any cover holes 551 prior to layering. Instead, the cover layer 522 and the base layer 524 may be layered together to form a structure similar to the plate substrate 420 (twelfth view). Once joined together, in a substrate removal operation (e.g., stamping, drilling, or etching) as described above, a plurality of covering holes similar to the covering holes 551 are formed. In some embodiments, the ramp 527 can be formed during the substrate removal procedure. The processing of the plate substrate 520 can then be performed in the same manner as described above for the fourteenth and fifteenth drawings.

第十六圖為製造一平面式電子裝置之方法700流程圖,像是用於製造該平面式電子裝置116(第一圖)、416(第十三圖)與516(第十五圖)。該方法700的最初操作可以包含製造一平面式板狀基板。例如該平面式板狀基板可與該板狀基板104(第一圖)或該板狀基板220(第三圖)、320(第八圖)、420(第十二圖)與520(第十四圖)相同。該方法可應用於各種具體實施例中,像是以上針對第三圖至第十五圖敘述之具體實施例。雖然該流程圖包含多數指示該方法700該等操作順序的箭頭,但該方法700並不需要以圖示之某些操作順序所執行,而是可以於其他操作之前、之後或同時進行。 Figure 16 is a flow diagram of a method 700 of fabricating a planar electronic device, such as for fabricating the planar electronic device 116 (first image), 416 (thirteenth image) and 516 (fifteenth image). The initial operation of the method 700 can include fabricating a planar plate substrate. For example, the planar plate substrate may be the same with the plate substrate 104 (first image) or the plate substrate 220 (third image), 320 (eighth image), 420 (twelfth image) and 520 (tenth The four figures are the same. The method can be applied to various specific embodiments, such as the specific embodiments described above with respect to the third to fifteenth figures. Although the flowchart includes a plurality of arrows indicating the sequence of operations of the method 700, the method 700 need not be performed in some order of operations illustrated, but may be performed before, after, or at the same time as other operations.

該方法700包含於步驟702提供一覆蓋層,並於步驟704提供具有完全延伸穿過於其本身之至少一材料孔洞之一基礎層。提供基礎層之操作步驟704可以包含供應一種預先形成材料孔洞之基礎層,或替代的該方法700可以包含先供應一基礎層並接著形成該材料孔洞。可應用各種基板移除操作以形成該材料孔洞,像是以上所述之衝壓、鑽除(或磨邊)或蝕刻操作。在某些具體實施例中,該覆蓋層也可具有完全延伸穿過其本身之多數覆蓋孔洞,像是該覆蓋層522(第十四圖)。該覆蓋孔洞可以預先形成,或該方 法700可以包含形成該覆蓋孔洞的步驟。 The method 700 includes providing a cover layer at step 702 and providing a base layer having at least one material hole extending completely through itself at step 704. The operational step 704 of providing a base layer can include supplying a base layer of a preformed material void, or alternatively the method 700 can include first supplying a base layer and then forming the material void. Various substrate removal operations can be applied to form the material holes, such as the stamping, drilling (or edging) or etching operations described above. In some embodiments, the cover layer can also have a plurality of cover holes extending completely through itself, such as the cover layer 522 (fourteenth view). The covering hole may be formed in advance, or the square Method 700 can include the step of forming the cover hole.

該方法700也包含於步驟706將該覆蓋層與該基礎層彼此連接。例如,該基礎層可以具有第一與第二側,而該覆蓋層可以具有一層側。該基礎與覆蓋層可以沿著該第一側與該層側彼此連接。該覆蓋層可以至少部分覆蓋該材料孔洞。在某些具體實施例中,該覆蓋層可以完全覆蓋該材料孔洞。 The method 700 also includes the step 706 of connecting the cover layer to the base layer to each other. For example, the base layer can have first and second sides, and the cover layer can have one side. The base and cover layer may be connected to each other along the first side and the layer side. The cover layer can at least partially cover the material void. In some embodiments, the cover layer can completely cover the material holes.

該方法700也包含於步驟708於該材料孔洞中提供一介電元件,並於步驟710將一磁芯裝載至該材料孔洞之中。裝載磁芯之步驟710可於提供介電元件之步驟708之前或之後進行。例如,第三圖至第十五圖描述於步驟708提供該介電元件之各種方法。例如,針對第三圖至第七圖而言,可以在步驟706彼此連接該覆蓋層222與該基礎層224時提供該介電元件226。也可於同時間形成該芯支撐通道272,並接著以一選擇性基板材料移除操作進行調整。針對第八圖至第十一圖而言,可於從該材料孔洞374移除該等接點356A、356B時,提供該介電元件373。在該等接點356A、356B被移除的情況下,該芯支撐通道372便存在於該介電元件373與該等基礎層324A、324B之間。 The method 700 also includes providing a dielectric component in the material hole in step 708 and loading a magnetic core into the material hole in step 710. The step 710 of loading the magnetic core can be performed before or after the step 708 of providing the dielectric element. For example, the third to fifteenth figures describe various methods of providing the dielectric element at step 708. For example, for the third to seventh figures, the dielectric element 226 can be provided when the cover layer 222 and the base layer 224 are connected to each other at step 706. The core support channel 272 can also be formed at the same time and then adjusted with a selective substrate material removal operation. For the eighth to eleventh views, the dielectric element 373 can be provided when the contacts 356A, 356B are removed from the material hole 374. Where the contacts 356A, 356B are removed, the core support channel 372 is present between the dielectric element 373 and the base layers 324A, 324B.

針對第十二圖至第十三圖,可於磁芯裝載之步驟710之後提供該介電元件491。更具體的,可於具有該磁芯488之該材料孔洞450之中沈積一彈性與非傳導封裝材料472。該封裝材料472可以流動至該磁芯488之該芯部孔穴490之中。當該封裝材料472硬化時,便提供該介電元件491。如上述示例,一芯支撐通道可以存在於該基礎層424與該介電元件491之間。該芯支撐通道繞著該介電元件491周圍延伸。 For the twelfth to thirteenth figures, the dielectric element 491 can be provided after the magnetic core loading step 710. More specifically, an elastic and non-conductive encapsulating material 472 can be deposited in the material cavity 450 having the magnetic core 488. The encapsulating material 472 can flow into the core cavity 490 of the magnetic core 488. The dielectric element 491 is provided when the encapsulating material 472 is hardened. As in the above example, a core support channel may be present between the base layer 424 and the dielectric element 491. The core support channel extends around the periphery of the dielectric element 491.

該方法700也包含於步驟712將該磁芯嵌入至該材料孔洞中之一封裝材料中。針對第三圖至第七圖的具體實施例而言,可在該介電元件266形成之後提供該磁芯288,並透過沈積一彈性與非傳導封裝材料的方式嵌入。同樣的,可在形成該介電元件373 之後,於該芯支撐通道372(第十一圖)中提供與該磁芯288(第七圖)類似之一磁芯,並接著透過沈積一彈性與非傳導封裝材料的方式嵌入。針對第十二圖至第十五圖的具體實施例而言,於提供該介電元件的同時間嵌入該磁芯。該方法700也包含於步驟714如以上敘述繞著該磁芯形成一或多個傳導回路。 The method 700 also includes the step 712 of embedding the magnetic core into one of the encapsulating materials of the material void. For the specific embodiments of the third to seventh embodiments, the magnetic core 288 can be provided after the dielectric element 266 is formed and embedded by depositing a resilient and non-conductive encapsulating material. Similarly, the dielectric element 373 can be formed Thereafter, a core similar to the core 288 (Fig. 7) is provided in the core support channel 372 (Fig. 11) and then embedded by depositing a resilient and non-conductive encapsulating material. For the specific embodiments of the twelfth to fifteenth embodiments, the magnetic core is embedded while the dielectric element is provided. The method 700 is also included in step 714 to form one or more conduction loops around the magnetic core as described above.

第十七圖與第十八圖描述製造一平面式電子裝置的替代方法,更具體的,其為在基板中提供多數材料孔洞及/或芯支撐通道的替代方法。在第三圖至第十六圖的具體實施例中,該等材料孔洞與芯支撐通道係利用堆疊多數基板層的方式形成,其中該等基板層之至少之一係已經包含一孔洞。然而,第十七圖與第十八圖的具體實施例可以包含從一已經成層之平面式板狀基板直接移除基板材料。在形成該材料孔洞之後,接著便可如以上敘述形成一平面式電子裝置。 Seventeenth and eighteenth aspects depict an alternative method of fabricating a planar electronic device, and more particularly, an alternative method of providing a plurality of material holes and/or core support channels in a substrate. In the specific embodiments of the third to sixteenth embodiments, the material holes and the core support channels are formed by stacking a plurality of substrate layers, wherein at least one of the substrate layers already contains a hole. However, the specific embodiments of the seventeenth and eighteenth aspects may include directly removing the substrate material from a layered planar plate substrate. After forming the holes of the material, a planar electronic device can then be formed as described above.

第十七圖為一空心鑽頭800的立體圖。如同所示,該空心鑽頭800包含一軸桿802,該軸桿802具有一鑽頭端804。該鑽頭端804包含延伸至該軸桿802一深度(未圖示)中之一軸桿凹穴806。該軸桿802包含界定該軸桿凹穴806之一鑽頭壁部808。該鑽頭壁部808之一內部表面界定一內部直徑DI1,而該鑽頭壁部808之一外部表面界定一外部直徑DO1。使於該鑽頭端804處之該內部與外部表面粗糙化,以有助於鑽除該板狀基板。 Figure 17 is a perspective view of a hollow drill bit 800. As shown, the hollow drill bit 800 includes a shaft 802 having a drill bit end 804. The bit end 804 includes a shaft pocket 806 that extends into a depth (not shown) of the shaft 802. The shaft 802 includes a drill wall portion 808 that defines the shaft pocket 806. One of the inner surfaces of the drill wall portion 808 defines an inner diameter D I1 and one of the outer surfaces of the drill wall portion 808 defines an outer diameter D O1 . The inner and outer surfaces at the bit end 804 are roughened to aid in the drilling of the plate substrate.

第十八圖顯示於不同製造階段之一板狀基板810。於階段812處,該板狀基板810係已經利用該鑽頭800(第十七圖)進行鑽除。在某些具體實施例中,可以使用水或冷卻劑冷卻並潤滑該鑽頭端804(第十七圖)。當該板狀基板810包含環氧樹脂玻璃纖維時,該鑽頭800可為一鑽石鑽頭。在鑽除該板狀基板810之後,形成一芯支撐通道814。該芯支撐通道814具有實質上與該鑽頭800之外部直徑DO1相同之一外部直徑DO2,並具有實質上與該鑽頭800之內部直徑DI1相同之一內部直徑DI2。該鑽頭800可於任何位置, 移除需要被移除以形成所想要芯支撐通道814的80%至100%基板材料。然而,如果該鑽頭800無法移除需要被移除以形成所想要之芯支撐通道814的100%基板材料,該板狀基板810便需要於階段813處利用一傳統鑽頭(也就是,並非使用一空心鑽頭)進行後續鑽除。該芯支撐通道814的尺寸可因為該選擇性鑽除而有效增加。 The eighteenth figure shows a plate substrate 810 at one of various manufacturing stages. At stage 812, the plate substrate 810 has been drilled using the drill bit 800 (Fig. 17). In some embodiments, the bit end 804 can be cooled and lubricated using water or a coolant (Fig. 17). When the plate substrate 810 comprises epoxy glass fiber, the drill bit 800 can be a diamond bit. After the plate substrate 810 is drilled, a core support channel 814 is formed. The core support passage 814 has an outer diameter D O2 that is substantially the same as the outer diameter D O1 of the drill bit 800 and has an inner diameter D I2 that is substantially the same as the inner diameter D I1 of the drill bit 800. The drill bit 800 can remove 80% to 100% of the substrate material that needs to be removed to form the desired core support channel 814 at any location. However, if the drill bit 800 cannot remove 100% of the substrate material that needs to be removed to form the desired core support channel 814, the plate substrate 810 would require a conventional drill bit at stage 813 (i.e., not used) A hollow drill bit) for subsequent drilling. The size of the core support channel 814 can be effectively increased due to this selective drilling.

第十九圖為一Forstner鑽頭820的立體圖。如同所示,該Forstner鑽頭820包含一軸桿822以及與該軸桿822連接之一鑽頭端824。該鑽頭端824包含一主要邊緣826與從該主要邊緣826相對端以繞周圍方式延伸的一對弧形臂部828、830。該等弧形臂部828、830的外部表面界定該鑽頭端824之一外部直徑DO3Figure 19 is a perspective view of a Forstner drill bit 820. As shown, the Forstner bit 820 includes a shaft 822 and a bit end 824 coupled to the shaft 822. The bit end 824 includes a major edge 826 and a pair of arcuate arms 828, 830 extending from the opposite end of the main edge 826 in a circumferential manner. The outer surfaces of the arcuate arms 828, 830 define an outer diameter D O3 of the bit end 824.

第二十圖顯示於不同製造階段之一板狀基板832。於階段834處,該板狀基板板832係已經利用該鑽頭820(第十九圖)進行鑽除。在鑽除該板狀基板832之後,形成一材料孔洞836。該材料孔洞836具有實質上與該鑽頭820之外部直徑DO3相同之一外部直徑DO4。該鑽頭820可於任何位置,移除需要被移除以形成所想要材料孔洞836的80%至100%基板材料。然而,如果該鑽頭820無法移除需要被移除以形成所想要之材料孔洞836的100%基板材料,該板狀基板832便需要於階段840處利用一傳統鑽頭進行後續鑽除。該材料孔洞836的尺寸可因為該選擇性鑽除而有效增加。 The twenty-fifth figure shows one of the plate substrates 832 at different stages of manufacture. At stage 834, the plate substrate plate 832 has been drilled using the drill bit 820 (Fig. 19). After the plate substrate 832 is drilled, a material hole 836 is formed. The material aperture 836 has an outer diameter D O4 that is substantially the same as the outer diameter D O3 of the drill bit 820. The drill bit 820 can remove 80% to 100% of the substrate material that needs to be removed to form the desired material void 836 at any location. However, if the drill bit 820 cannot remove 100% of the substrate material that needs to be removed to form the desired material hole 836, the plate substrate 832 would need to be subsequently drilled at stage 840 using a conventional drill bit. The size of the material hole 836 can be effectively increased due to the selective drilling.

在形成該芯支撐通道814(第十八圖)之後,將一磁芯裝載至該芯支撐通道814之中,並如以上敘述相同方式製造一平面式電子裝置。在形成該材料孔洞836(第二十圖)之後,可將一磁芯裝載至該材料孔洞836之中,並如以上敘述相同方式製造一平面式電子裝置。在某些具體實施例中,可以在檢查界定該芯支撐通道814或該材料孔洞836之該等內部表面之後,確認所使用之材料移除程序。因此該等表面便可具有如空心鑽頭鑽除表面或Forstner鑽頭鑽除表面的特徵。 After forming the core support passage 814 (Fig. 18), a magnetic core is loaded into the core support passage 814, and a planar electronic device is manufactured in the same manner as described above. After forming the material hole 836 (p. twentieth), a magnetic core can be loaded into the material hole 836 and a planar electronic device can be fabricated in the same manner as described above. In some embodiments, the material removal procedure used can be confirmed after inspection of the interior surfaces defining the core support channel 814 or the material aperture 836. Thus the surfaces can have features such as a hollow drill bit drilled surface or a Forstner bit drilled surface.

100‧‧‧磁性元件陣列 100‧‧‧Magnetic array

102‧‧‧磁性元件 102‧‧‧Magnetic components

104‧‧‧板狀基板 104‧‧‧ Plate substrate

106‧‧‧上方導體 106‧‧‧Upper conductor

108‧‧‧厚度尺寸 108‧‧‧ thickness dimensions

110‧‧‧下方側 110‧‧‧Lower side

112‧‧‧上方側 112‧‧‧ upper side

114‧‧‧貫通孔 114‧‧‧through holes

116‧‧‧電子裝置 116‧‧‧Electronic devices

Claims (15)

一種製造用於接收一磁芯之一平面式板狀基板的方法,該方法包含以下步驟:提供具有一層側之一覆蓋層;提供具有一第一側與第二側之一基礎層,該基礎層係包含完全延伸穿過該第一側與第二側之間該基礎層之一材料孔洞;沿著該第一側與該層側將該覆蓋層與該基礎層彼此結合,該覆蓋層係延伸覆蓋該材料孔洞之至少一部分;以及於該材料孔洞之中提供一介電元件,其中於該介電元件及該基礎層之間存在一芯支撐通道,該芯支撐通道係繞著該介電元件周圍延伸,並經配置以於其中具有該磁芯。 A method of manufacturing a planar plate substrate for receiving a magnetic core, the method comprising the steps of: providing a cover layer having a layer side; providing a base layer having a first side and a second side, the base The layer includes a material hole extending completely through the base layer between the first side and the second side; the cover layer and the base layer are bonded to each other along the first side and the layer side, the cover layer Extendingly covering at least a portion of the material hole; and providing a dielectric component in the material hole, wherein a core support channel exists between the dielectric component and the base layer, the core support channel surrounding the dielectric The component extends around and is configured to have the magnetic core therein. 如申請專利範圍第1項之方法,進一步包含將該磁芯穿過該第二側裝載至該材料孔洞之中,該磁芯係繞著該介電元件延伸。 The method of claim 1, further comprising loading the magnetic core through the second side into the hole of the material, the magnetic core extending around the dielectric element. 如申請專利範圍第2項之方法,進一步包含將該磁芯嵌入一封裝材料中,該封裝材料係沉積於該材料孔洞之中,並繞著該磁芯形成一或多個傳導回路,該等傳導回路係延伸穿過該介電元件與該基礎層。 The method of claim 2, further comprising embedding the magnetic core in a packaging material deposited in the material hole and forming one or more conduction loops around the magnetic core, such as A conductive loop extends through the dielectric element and the base layer. 如申請專利範圍第1項之方法,其中該材料孔洞係利用衝壓該基礎層的方式所形成。 The method of claim 1, wherein the material hole is formed by stamping the base layer. 如申請專利範圍第1項之方法,進一步包含於該基礎層中同時衝壓多數個該材料孔洞。 The method of claim 1, further comprising simultaneously punching a plurality of holes of the material in the base layer. 如申請專利範圍第1項之方法,其中該基礎層包含該等多數個材料孔洞,該覆蓋層係延伸覆蓋該等材料孔洞之至少一部分。 The method of claim 1, wherein the base layer comprises the plurality of material holes, the cover layer extending over at least a portion of the holes of the material. 如申請專利範圍第1項之方法,其中該芯支撐通道係由該基礎層之一面向內表面與該介電元件之一面向外表面所界定, 該面向外表面係面對該面向內表面,至少該面向內表面之一部份及/或至少該面向外表面之一部份係被切斷。 The method of claim 1, wherein the core support channel is defined by one of the base layer facing the inner surface and one of the dielectric elements facing the outer surface, The outwardly facing surface faces the inwardly facing surface, at least a portion of the inwardly facing surface and/or at least a portion of the inwardly facing surface is severed. 如申請專利範圍第1項之方法,其中該芯支撐通道係由該基礎層之一面向內表面與該介電元件之一面向外表面所界定,該面向外表面係面對該面向內表面,該芯支撐通道係由一或多個對準特徵所部分界定,該等對準特徵係經配置以將該磁芯接合於該芯支撐通道中。 The method of claim 1, wherein the core support passage is defined by one of the base layer facing the inner surface and one of the dielectric members facing the outer surface, the outwardly facing surface facing the inwardly facing surface, The core support channel is partially defined by one or more alignment features that are configured to engage the magnetic core in the core support channel. 如申請專利範圍第1項之方法,其中該芯支撐通道係由該基礎層之一面向內表面與該介電元件之一面向外表面所界定,該面向外表面係面對該面向內表面,該方法進一步包含鑽除至少該面向內表面及該面向外表面之一之至少一部分。 The method of claim 1, wherein the core support passage is defined by one of the base layer facing the inner surface and one of the dielectric members facing the outer surface, the outwardly facing surface facing the inwardly facing surface, The method further includes drilling at least a portion of at least the inwardly facing surface and the outwardly facing surface. 如申請專利範圍第9項之方法,其中所述鑽除包含提供一斜面對準特徵,該斜面對準特徵係經配置以接合該磁芯。 The method of claim 9, wherein the drilling comprises providing a bevel alignment feature configured to engage the magnetic core. 如申請專利範圍第1項之方法,進一步包含將該基礎層裝載於一模具結構上,該模具結構包含一接合表面與從該接合表面凸出之一平台,該平台環繞一元件凹穴,其中該平台之尺寸與形狀係可由該基礎層之該材料孔洞所接收,而該元件凹穴之尺寸與形狀則可接收該介電元件。 The method of claim 1, further comprising loading the base layer on a mold structure comprising a joint surface and a platform projecting from the joint surface, the platform surrounding a component recess, wherein The platform is sized and shaped to be received by the material aperture of the base layer, and the component recess is sized and shaped to receive the dielectric component. 如申請專利範圍第11項之方法,其中所述該覆蓋層與該基礎層之結合係包含將該覆蓋層結合至該介電元件與結合至該基礎層。 The method of claim 11, wherein the bonding of the cover layer to the base layer comprises bonding the cover layer to the dielectric element and to the base layer. 如申請專利範圍第1項之方法,其中該介電元件係透過一接點結合至該基礎層,其中所述提供該介電元件包含移除該接點。 The method of claim 1, wherein the dielectric component is bonded to the base layer through a joint, wherein the providing the dielectric component comprises removing the joint. 如申請專利範圍第1項之方法,其中該覆蓋層包含一覆蓋孔洞,當該覆蓋層與該基礎層結合時,該覆蓋孔洞係與該材料孔洞對準,該覆蓋孔洞具有小於該材料孔洞的尺寸。 The method of claim 1, wherein the cover layer comprises a cover hole, and when the cover layer is combined with the base layer, the cover hole is aligned with the material hole, the cover hole having a hole smaller than the material hole size. 如申請專利範圍第14項之方法,進一步包含在將該覆蓋層與 該基礎層結合於一起之後形成該覆蓋孔洞。 The method of claim 14, wherein the method further comprises The base layer is bonded together to form the covering hole.
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