TW201332013A - 一種減少晶片背面生成聚合物的聚焦環 - Google Patents
一種減少晶片背面生成聚合物的聚焦環 Download PDFInfo
- Publication number
- TW201332013A TW201332013A TW101143726A TW101143726A TW201332013A TW 201332013 A TW201332013 A TW 201332013A TW 101143726 A TW101143726 A TW 101143726A TW 101143726 A TW101143726 A TW 101143726A TW 201332013 A TW201332013 A TW 201332013A
- Authority
- TW
- Taiwan
- Prior art keywords
- ring
- focus ring
- wafer
- focus
- plasma
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 44
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 12
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 11
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- WTUYVMCQYIBIKQ-UHFFFAOYSA-K trilithium;trifluoride Chemical compound [Li+].[Li+].[Li+].[F-].[F-].[F-] WTUYVMCQYIBIKQ-UHFFFAOYSA-K 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448622.7A CN103187232B (zh) | 2011-12-28 | 2011-12-28 | 一种减少晶片背面生成聚合物的聚焦环 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201332013A true TW201332013A (zh) | 2013-08-01 |
| TWI488237B TWI488237B (enExample) | 2015-06-11 |
Family
ID=48678343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101143726A TW201332013A (zh) | 2011-12-28 | 2012-11-22 | 一種減少晶片背面生成聚合物的聚焦環 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187232B (enExample) |
| TW (1) | TW201332013A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102136790B1 (ko) * | 2013-11-15 | 2020-07-23 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치와, 이의 제조 방법 |
| CN104008946B (zh) * | 2014-06-12 | 2016-09-07 | 上海华力微电子有限公司 | 铝刻蚀工艺用聚焦环、铝刻蚀工艺 |
| CN109423606A (zh) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | 聚焦环及其耐腐蚀防护方法 |
| JP7370228B2 (ja) * | 2019-11-22 | 2023-10-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113097038B (zh) * | 2021-02-25 | 2022-07-15 | 长江存储科技有限责任公司 | 刻蚀装置 |
| US20250357171A1 (en) * | 2022-06-08 | 2025-11-20 | Lam Research Corporation | Chucking system with silane coupling agent |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| CN1518073A (zh) * | 2003-01-07 | 2004-08-04 | ���������ƴ���ʽ���� | 等离子体处理装置及聚焦环 |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| WO2008044555A1 (en) * | 2006-10-06 | 2008-04-17 | Asahi Tech Co., Ltd. | Corrosion-resistant member and method for producing the same |
| CN101552182B (zh) * | 2008-03-31 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体制造工艺中的边缘环机构 |
| DE202010015933U1 (de) * | 2009-12-01 | 2011-05-05 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
-
2011
- 2011-12-28 CN CN201110448622.7A patent/CN103187232B/zh active Active
-
2012
- 2012-11-22 TW TW101143726A patent/TW201332013A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN103187232A (zh) | 2013-07-03 |
| TWI488237B (enExample) | 2015-06-11 |
| CN103187232B (zh) | 2015-09-16 |
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