TW201331568A - Photoluminescence measuring system and measuring method thereof - Google Patents

Photoluminescence measuring system and measuring method thereof Download PDF

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TW201331568A
TW201331568A TW101101796A TW101101796A TW201331568A TW 201331568 A TW201331568 A TW 201331568A TW 101101796 A TW101101796 A TW 101101796A TW 101101796 A TW101101796 A TW 101101796A TW 201331568 A TW201331568 A TW 201331568A
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mirror
light
optical path
irradiated
beam splitter
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TWI442043B (en
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Mu-Chiau Xie
Wen-Tung Chang
Shui-Fa Chuang
Fang-Jung Shiou
Geo-Ry Tang
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Univ Nat Taiwan Science Tech
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Abstract

A photoluminescence measuring system includes a first light path sequentially constituted of an exciting light source, a splitter, a reflector, and a table. The reflector has a through hole corresponding to the first light path. When the exciting light source emits an emitting light beam along the first light path, the emitting light beam penetrates the splitter and illuminates directly an object to be measured on the table to form a photoluminescence, and make the photoluminescence illuminates a measuring device via the reflector to process a photoluminescence measurement, to prevent from the decay of the photoluminescence. It is also disclosed a measuring method using the said photoluminescence measuring system.

Description

螢光反應檢測系統及其檢測方法Fluorescence reaction detection system and detection method thereof

本發明係與一種螢光反應檢測系統及使用其之方法,尤其是一種光致螢光之量測系統及使用其之方法有關。The present invention relates to a fluorescent reaction detecting system and a method of using the same, and more particularly to a photoluminescence measuring system and a method of using the same.

於發光二極體晶片的製作中,通常是利用通電後能發出光線之半導體材料,在整片晶圓上形成多個發光二極體晶片,再將多個發光二極體晶片切單後製成。此種半導體材料於通電後,電子會從基態躍升至激發態,再從激發態掉至較低能帶,同時發出電磁波。當電磁波的波長落入可見光範圍時,通常會利用此種半導體做為發光裝置的材料。此外,當發光二極體晶片之半導體材料被照射特定波長的光線時,電子也會從基態躍升至激發態,並產生一電子電洞對,此電子電洞對會再次結合而發出螢光,此種螢光反應現象通稱為「光致螢光」(Photoluminescence,PL)。In the fabrication of a light-emitting diode wafer, a semiconductor material capable of emitting light after being energized is generally used to form a plurality of light-emitting diode wafers on a whole wafer, and then a plurality of light-emitting diode wafers are singulated. to make. After the semiconductor material is energized, the electrons will jump from the ground state to the excited state, and then fall from the excited state to the lower energy band, and at the same time emit electromagnetic waves. When the wavelength of the electromagnetic wave falls within the visible range, such a semiconductor is usually used as a material of the light-emitting device. In addition, when the semiconductor material of the LED chip is irradiated with light of a specific wavelength, the electron also jumps from the ground state to the excited state, and generates an electron hole pair, and the electron hole pair will recombine and emit fluorescence. This phenomenon of fluorescence reaction is commonly referred to as "photoluminescence" (PL).

一般而言,倘若發光二極體晶片有缺陷,則螢光的頻譜會發生變化。因此,一般製造者會在切單之後,以手動方式分別對每個發光二極體晶片照射此種特定波長的光線,進而使發光二極體的半導體材料發出螢光,以檢測發光二極體晶片之製程是否完善無缺失。透過分析螢光的頻譜資訊將可以得知發光二極體晶片的材質特性與缺陷。此種檢測方法被稱為螢光反應檢測方法或光致螢光檢測方法。相對於發光二極體晶片之半導體材料而言,由於所選用的光線能量不算強,故螢光反應檢測方法是一種非破壞性的檢測技術。但若想要成功激發螢光,激發光源的能量必須大於半導體材料的能隙。由於大部分的半導體材料能隙都小於3 eV,若將其換算則激發光源的波長通常不能大於綠光範圍。In general, if the LED chip is defective, the spectrum of the fluorescence changes. Therefore, the general manufacturer will manually illuminate each of the light-emitting diode chips with light of a specific wavelength after singulation, thereby causing the semiconductor material of the light-emitting diode to emit fluorescence to detect the light-emitting diode. Whether the wafer process is perfect or not. By analyzing the spectral information of the fluorescent light, the material characteristics and defects of the light-emitting diode wafer can be known. This detection method is called a fluorescence reaction detection method or a photoluminescence detection method. Relative to the semiconductor material of the LED chip, the fluorescence reaction detection method is a non-destructive detection technique because the selected light energy is not strong. However, if the fluorescence is to be successfully excited, the energy of the excitation source must be greater than the energy gap of the semiconductor material. Since most semiconductor materials have an energy gap of less than 3 eV, the wavelength of the excitation source is usually not greater than the green range if converted.

另外,傳統的螢光反應檢測系統中,實驗樣品的對位僅能直接用人眼去判別及對位。然而,除了手動檢測耗時費工以外,此螢光大多強度不強,因此檢測系統於檢測螢光時,是否能夠自動檢測並避免螢光強度的減弱已成為重要的課題。In addition, in the conventional fluorescence reaction detection system, the alignment of the experimental samples can only be directly discriminated and aligned by the human eye. However, in addition to manual detection and time-consuming labor, most of the fluorescence is not strong, so whether the detection system can automatically detect and avoid the decrease of the fluorescence intensity when detecting the fluorescence has become an important issue.

有鑒於上述問題,本發明提供一種螢光反應檢測系統及其檢測方法,其係藉由具有穿洞之反射鏡使用於定位之光線得以順利通過反射鏡,並將螢光反應之光致螢光大幅收集至檢測裝置中,以減少光致螢光的逸散。In view of the above problems, the present invention provides a fluorescence reaction detecting system and a detecting method thereof, which are capable of smoothly passing through a mirror by using a mirror having a through hole, and fluorescing the fluorescent reaction light. Largely collected into the detection device to reduce the escape of photoluminescence.

本發明提供一種螢光反應檢測系統,主要包括激發光源、分光鏡、反射鏡、工作台、定位裝置及檢測裝置。激發光源、分光鏡、反射鏡及工作台係依序構成第一光路。工作台、反射鏡、分光鏡及定位裝置再依序構成第二光路。工作台、反射鏡及檢測裝置則依序構成第三光路。激發光源係沿著第一光路發出一出射光,出射光穿透分光鏡及反射鏡而照射至工作台。出射光在照射於工作台上之一待檢測物件後,會形成一反射光及一光致螢光,反射光係沿著第二光路照射至定位裝置。光致螢光則沿著第三光路照射至檢測裝置。反射鏡具有一穿洞,該穿洞係對應於第一光路,以令出射光於穿透分光鏡後直接照射至待檢測物件。The invention provides a fluorescence reaction detection system, which mainly comprises an excitation light source, a beam splitter, a mirror, a worktable, a positioning device and a detecting device. The excitation light source, the beam splitter, the mirror, and the table sequentially form a first optical path. The worktable, the mirror, the beam splitter and the positioning device form a second optical path in sequence. The table, the mirror and the detecting device sequentially form a third optical path. The excitation light source emits an outgoing light along the first optical path, and the emitted light passes through the beam splitter and the mirror to be irradiated to the workbench. After the emitted light is irradiated on one of the objects to be detected on the workbench, a reflected light and a photo-induced fluorescent light are formed, and the reflected light is irradiated to the positioning device along the second optical path. The photoluminescence is irradiated to the detecting device along the third optical path. The mirror has a through hole corresponding to the first light path, so that the emitted light is directly irradiated to the object to be detected after passing through the beam splitter.

本發明提供一種應用上述螢光反應檢測系統之檢測方法,其包含以下步驟。將出射光沿著第一光路而照射於待檢測物件之待測位置。定位裝置可以沿著第二光路來比對出射光所照射之位置與待測位置是否相符。當待測位置與該出射光所照射之該位置相符時,該檢測裝置可以沿著該第三光路來檢測該待測位置之螢光反應而形成之光致螢光。出射光所照射之位置與待測位置不相符時,則驅動工作台進行位移,以使得待檢測物件之待測位置移至出射光所照射之位置。接著,再檢測另一個待測位置之螢光反應。The present invention provides a detection method using the above-described fluorescence reaction detecting system, which comprises the following steps. The emitted light is irradiated along the first optical path to the position to be detected of the object to be detected. The positioning device can compare the position irradiated by the outgoing light with the position to be tested along the second optical path. When the position to be tested coincides with the position illuminated by the emitted light, the detecting device can detect the photoluminescence formed by the fluorescent reaction of the position to be tested along the third optical path. When the position irradiated by the emitted light does not match the position to be tested, the table is driven to be displaced so that the position to be detected of the object to be detected is moved to the position where the emitted light is irradiated. Next, another fluorescent reaction at the position to be tested is detected.

根據本發明之螢光反應檢測系統及其檢測方法,其可藉由第二光路之配置,而自動地對待檢測物件進行定位,並且藉由具有穿洞之反射鏡及第三光路之配置,而使得螢光反應中大部分的光致螢光皆能藉由反射鏡反射至檢測裝置,進而使檢測裝置能夠接收到足量的光致螢光,以利檢測結果的準確性。According to the fluorescent reaction detecting system and the detecting method thereof of the present invention, the object to be detected is automatically positioned by the arrangement of the second optical path, and by the configuration of the mirror having the through hole and the third optical path, The majority of the photoluminescence in the fluorescent reaction can be reflected by the mirror to the detecting device, so that the detecting device can receive a sufficient amount of photoluminescence to facilitate the accuracy of the detection result.

請參照第1圖,其繪示本發明之實施例的螢光反應檢測系統10之架構圖。螢光反應檢測系統10主要包含控制單元100、激發光源110、分光鏡120、反射鏡130、工作台140、檢測裝置150及定位裝置160。激發光源110、分光鏡120、反射鏡130及工作台140係依序構成第一光路L1。工作台140、反射鏡130、分光鏡120及定位裝置160再依序構成第二光路L2。工作台140、反射鏡130及檢測裝置150則依序構成第三光路L3。反射鏡130之中央係具有一個穿洞131,該穿洞131的位置係對應於第一光路L1。工作台140係用以承載並移動待檢測物件200之位置。Please refer to FIG. 1 , which is a block diagram of a fluorescence reaction detecting system 10 according to an embodiment of the present invention. The fluorescence reaction detecting system 10 mainly includes a control unit 100, an excitation light source 110, a beam splitter 120, a mirror 130, a table 140, a detecting device 150, and a positioning device 160. The excitation light source 110, the beam splitter 120, the mirror 130, and the table 140 sequentially constitute the first optical path L1. The stage 140, the mirror 130, the beam splitter 120, and the positioning device 160 sequentially constitute the second optical path L2. The stage 140, the mirror 130, and the detecting device 150 sequentially constitute the third optical path L3. The center of the mirror 130 has a through hole 131, and the position of the through hole 131 corresponds to the first optical path L1. The table 140 is used to carry and move the position of the object to be inspected 200.

於本實施例中,控制單元100例如為電腦及控制程式。激發光源110則例如為氦鎘雷射(He-Cd laser)、氬離子雷射(Ar-ion laser)及綠光雷射。分光鏡120例如為穿透率及反射率各佔一半之分光鏡,且其係具有第一反射面121,反射鏡130係具有第二反射面132。第二反射面132可以能由一鍍鋁反射層所形成。工作台140可以例如為滾珠螺桿驅動式雙軸運動平台或線性馬達驅動式雙軸運動平台。檢測裝置150可以例如為光譜儀(Spectroscope),以產生所檢測之光致螢光的光譜分布。定位裝置160例如為電荷耦合元件(Charge-coupled device,CCD)影像擷取裝置,或互補式金屬氧化層半導體(Complementary metal-oxide-semiconductor,CMOS)影像擷取裝置。待檢測物件200可以例如為發光二極體之晶圓,其所包含的半導體材料可以例如為鋁砷化鎵(AlGaAs)、磷化銦鎵鋁(AlGaInP)、磷化鎵(GaP)、氮化鎵(GaN)、銦氮化鎵(InGaN)、砷化鎵(GaAs)、磷化銦(InP)、碳化矽(SiC)、矽(Si)及硒化鋅(ZnSe)等材料。In this embodiment, the control unit 100 is, for example, a computer and a control program. The excitation light source 110 is, for example, a He-Cd laser, an Ar-ion laser, and a green laser. The beam splitter 120 is, for example, a beam splitter in which the transmittance and the reflectance are each half, and has a first reflecting surface 121, and the mirror 130 has a second reflecting surface 132. The second reflective surface 132 can be formed from an aluminized reflective layer. The table 140 can be, for example, a ball screw driven biaxial motion platform or a linear motor driven biaxial motion platform. Detection device 150 can be, for example, a spectrometer to produce a spectral distribution of the detected photoluminescence. The positioning device 160 is, for example, a charge-coupled device (CCD) image capturing device or a complementary metal-oxide-semiconductor (CMOS) image capturing device. The object to be detected 200 may be, for example, a wafer of light emitting diodes, and the semiconductor material contained therein may be, for example, aluminum gallium arsenide (AlGaAs), indium gallium phosphide (AlGaInP), gallium phosphide (GaP), nitriding. Materials such as gallium (GaN), indium gallium nitride (InGaN), gallium arsenide (GaAs), indium phosphide (InP), tantalum carbide (SiC), germanium (Si), and zinc selenide (ZnSe).

如第1圖所示,第一光路L1係行經激發光源110、分光鏡120、再通過反射鏡130之穿洞131,而到達工作台140。第二光路L2係行經工作台140、通過反射鏡130之穿洞131、分光鏡120之第一反射面121,而到達定位裝置160。第三光路L3則行經工作台140、反射鏡130之第二反射面132,而到達檢測裝置150。激發光源110能沿著第一光路L1發出一道出射光,此出射光會穿透分光鏡120並通過反射鏡130之穿洞131而照射至工作台140,而使得出射光於穿透分光鏡120之後,能夠直接照射至待檢測物件200。出射光在照射於待檢測物件200之後能形成一道反射光。此反射光會沿著第二光路L2而照射至定位裝置160,此外出射光除了形成一反射光之外還能形成一道光致螢光,其能沿著第三光路L3而照射至檢測裝置150。As shown in FIG. 1, the first optical path L1 passes through the excitation light source 110, the beam splitter 120, and the through hole 131 of the mirror 130, and reaches the table 140. The second optical path L2 passes through the table 140, through the through hole 131 of the mirror 130, and the first reflecting surface 121 of the beam splitter 120, and reaches the positioning device 160. The third optical path L3 passes through the table 140 and the second reflecting surface 132 of the mirror 130 to reach the detecting device 150. The excitation light source 110 can emit an outgoing light along the first optical path L1, and the emitted light can pass through the beam splitter 120 and be irradiated to the table 140 through the through hole 131 of the mirror 130, so that the emitted light is transmitted through the beam splitter 120. Thereafter, it is possible to directly illuminate the object to be detected 200. The emitted light can form a reflected light after being irradiated to the object to be detected 200. The reflected light is irradiated to the positioning device 160 along the second optical path L2. In addition, the emitted light can form a photoluminescence in addition to forming a reflected light, which can be irradiated to the detecting device 150 along the third optical path L3. .

於本實施例中,螢光反應檢測系統10還能於激發光源110及分光鏡120之間,包含一片帶通濾光片111。此帶通濾光片111對於非指定波長範圍之光線的透光率極低,因而能過濾出射光中之非所欲波長的光線。另外,於分光鏡120及定位裝置160之間,螢光反應檢測系統10還能包含一片長波通濾光片161,而於反射鏡130及檢測裝置150之間,螢光反應檢測系統10也還能另外包含一片長波通濾光片152。長波通濾光片161、152之切斷波長係大於出射光中所需要的波長,且長波通濾光片161、152對於較切斷波長更短之光線的透光率極低。因此,長波通濾光片161、152分別能夠保護定位裝置160及檢測裝置150,以避免受激發光源110所發出之出射光及其反射光的傷害。In the present embodiment, the fluorescence reaction detecting system 10 can also include a strip pass filter 111 between the excitation light source 110 and the beam splitter 120. The band pass filter 111 has a very low light transmittance for light of a non-specified wavelength range, and thus can filter out light of an undesired wavelength in the emitted light. In addition, between the beam splitter 120 and the positioning device 160, the fluorescence reaction detecting system 10 can further include a long wave pass filter 161, and between the mirror 130 and the detecting device 150, the fluorescent reaction detecting system 10 also A further long pass filter 152 can be included. The cut wavelengths of the long pass filters 161 and 152 are larger than the wavelengths required for the outgoing light, and the long pass filters 161 and 152 have extremely low transmittance for light having a shorter cutoff wavelength. Therefore, the long-wavelength filters 161 and 152 can respectively protect the positioning device 160 and the detecting device 150 from the damage of the emitted light emitted by the excitation light source 110 and the reflected light thereof.

此外,於本實施例中,於反射鏡130及檢測裝置150之間,螢光反應檢測系統10還能包含一片聚光鏡153,檢測裝置150還能包含光纖151。聚光鏡153能夠聚集光致螢光而使其照射於光纖151上,再藉由光纖151將光致螢光引導至檢測裝置150。於反射鏡130及工作台140之間,螢光反應檢測系統10還能包含輔助照明光源170。輔助照明光源170可以例如為環形光源。輔助照明光源170及工作台140會依序構成第四光路L4。輔助照明光源170能夠沿著第四光路L4而照射至工作台140上之待檢測物件200,以經由反射鏡130之穿洞131及分光鏡120之第一反射面121(即經由第二光路L2),而將待檢測物件200之影像照射至定位裝置160,使定位裝置160得以感測待檢測物件200之影像,以利於待檢測物件200之定位。輔助照明光源170能發出波長大於長波通濾光片161之切斷波長的光線。再者,於反射鏡130及工作台140之間,螢光反應檢測系統10還能包含一聚焦鏡180,以利於激發光源110所發出之出射光,能更佳地聚焦於工作台140上之待檢測物件200上。In addition, in the present embodiment, between the mirror 130 and the detecting device 150, the fluorescent reaction detecting system 10 can further include a concentrating mirror 153, and the detecting device 150 can further include an optical fiber 151. The condensing mirror 153 can collect the photoluminescence and illuminate the optical fiber 151, and then guide the photoluminescence to the detecting device 150 by the optical fiber 151. Between the mirror 130 and the table 140, the fluorescence reaction detection system 10 can also include an auxiliary illumination source 170. The auxiliary illumination source 170 can be, for example, an annular source. The auxiliary illumination source 170 and the stage 140 sequentially form the fourth optical path L4. The auxiliary illumination light source 170 can be irradiated to the object to be detected 200 on the table 140 along the fourth optical path L4 to pass through the through hole 131 of the mirror 130 and the first reflective surface 121 of the beam splitter 120 (ie, via the second optical path L2) And the image of the object to be detected 200 is irradiated to the positioning device 160, so that the positioning device 160 can sense the image of the object to be detected 200 to facilitate the positioning of the object to be detected 200. The auxiliary illumination source 170 can emit light having a wavelength greater than the cutoff wavelength of the long pass filter 161. Furthermore, between the mirror 130 and the table 140, the fluorescence reaction detecting system 10 can further include a focusing mirror 180 for facilitating the excitation of the emitted light from the light source 110, which can be better focused on the table 140. The object to be tested 200 is on.

如第1圖所示,本實施例揭露一種螢光反應檢測方法,其包含有以下所述之步驟。控制單元100會開啟輔助照明光源170,並調整放置有待檢測物件200之工作台140之位置。輔助照明光源170之光線係沿著第四光路L4,而直接照射至待檢測物件200。輔助照明光源170之光線在照射至待檢測物件200後,能沿著第二光路L2,經過聚焦鏡180,穿過反射鏡130之穿洞131,再藉由分光鏡120之第一反射面121之反射後,經過長波通濾光片161之保護,再由定位裝置160進行感測。請同時參照第2圖,其繪示本發明之實施例的待檢測物件200之俯視圖。控制單元100控制工作台140及定位裝置160,以沿著路徑W來掃描整片待檢測物件200。待檢測物件200係具有多個發光二極體晶片210。請同時參照第3圖,其繪示第2圖之局部放大圖。定位裝置160能感測並記錄多個發光二極體晶片210之間的交接位置P1,也就是發光二極體晶片210的角落。控制單元100會根據這些交接位置P1來計算並記錄待測位置P2(即任意一發光二極體晶片210之四個角落的交點)。As shown in Fig. 1, this embodiment discloses a fluorescence reaction detecting method comprising the steps described below. The control unit 100 turns on the auxiliary illumination source 170 and adjusts the position of the table 140 on which the object to be detected 200 is placed. The light of the auxiliary illumination source 170 is directly irradiated to the object to be detected 200 along the fourth optical path L4. After the illumination light from the auxiliary illumination source 170 is irradiated to the object to be detected 200, it can pass through the second optical path L2, pass through the focusing mirror 180, pass through the through hole 131 of the mirror 130, and then pass through the first reflecting surface 121 of the beam splitter 120. After being reflected, it is protected by the long pass filter 161 and then sensed by the positioning device 160. Please refer to FIG. 2 at the same time, which shows a top view of the object to be tested 200 according to an embodiment of the present invention. The control unit 100 controls the table 140 and the positioning device 160 to scan the entire object to be detected 200 along the path W. The object to be detected 200 has a plurality of light emitting diode wafers 210. Please also refer to FIG. 3, which is a partial enlarged view of FIG. The positioning device 160 can sense and record the intersection position P1 between the plurality of LED wafers 210, that is, the corners of the LED wafer 210. The control unit 100 calculates and records the position to be tested P2 (ie, the intersection of the four corners of any one of the LED chips 210) according to the transfer positions P1.

接著,如第1圖所示,開啟激發光源110以沿第一光路L1發出一出射光。出射光會經過帶通濾光片111並濾掉非所欲之波長的光線,僅使具有需要之波長的出射光通過。出射光會穿透分光鏡120及反射鏡130之穿洞131,並照射至待檢測物件200而形成一反射光。反射光將沿著第二光路L2經過聚焦鏡180、反射鏡130之穿洞131及分光鏡120之第一反射面121,再經由長波通濾光片161之保護而照射至定位裝置160,以避免定位裝置160受反射光直接照射而損壞。控制單元100係藉由此反射光於定位裝置160中所顯示之位置,判斷出射光是否照射於待檢測物件200的其中之一個發光二極體晶片210的待測位置P2,即比對出射光所照射之位置與待測位置P2是否相符。當出射光並未照射於發光二極體晶片210之待測位置P2,即出射光所照射之位置與待測位置P2不相符時,便移動工作台140,直到出射光照射於待測位置P2。Next, as shown in Fig. 1, the excitation light source 110 is turned on to emit an outgoing light along the first optical path L1. The exiting light passes through the bandpass filter 111 and filters out undesired wavelengths of light, passing only the exiting light having the desired wavelength. The emitted light penetrates the through hole 131 of the beam splitter 120 and the mirror 130, and is irradiated to the object to be detected 200 to form a reflected light. The reflected light will pass through the focusing mirror 180, the through hole 131 of the mirror 130 and the first reflecting surface 121 of the beam splitter 120 along the second optical path L2, and then irradiated to the positioning device 160 through the protection of the long pass filter 161 to The positioning device 160 is prevented from being damaged by direct irradiation of reflected light. The control unit 100 determines whether the emitted light is irradiated to the to-be-measured position P2 of one of the LED chips 210 of the object to be detected 200 by the position of the reflected light reflected in the positioning device 160, that is, the emitted light is compared. Whether the position irradiated corresponds to the position to be tested P2. When the emitted light is not irradiated to the position P2 to be measured of the LED chip 210, that is, the position where the emitted light is irradiated does not coincide with the position P2 to be measured, the table 140 is moved until the emitted light is irradiated to the position P2 to be tested. .

當確定出射光照射於待測位置P2時,出射光會照射至待檢測物件並因螢光反應形成一光致螢光。光致螢光於通過聚焦鏡180,再經過反射鏡130之第二反射面132的反射,以及聚光鏡153之聚光與長波通濾光片152之保護後,而照射至檢測裝置150之光纖151。檢測裝置150會根據光致螢光來產生光譜,並將此光譜送至控制單元100進行分析,以判斷此待測位置P2上之發光二極體晶片210是否有製程上的缺陷。When it is determined that the emitted light is irradiated to the position P2 to be tested, the emitted light is irradiated to the object to be detected and a photoluminescence is formed due to the fluorescence reaction. The photoluminescence is transmitted through the focusing mirror 180, through the reflection of the second reflecting surface 132 of the mirror 130, and the condensing of the collecting mirror 153 and the long-wavelength filter 152, and then irradiated to the optical fiber 151 of the detecting device 150. . The detecting device 150 generates a spectrum according to the photoluminescence, and sends the spectrum to the control unit 100 for analysis to determine whether the LED chip 210 at the position P2 to be tested has a defect in the process.

工作台140於出射光照射於此待測位置P2並形成光致螢光後,便會根據所記錄之複數個待測位置P2而移動,以令出射光照射至另一個待測位置P2以再形成另一個光致螢光。當整片待檢測物件200之所有的發光二極體晶片210被全面檢測完畢時,即完成此檢測物件200之檢測。After the emitted light is irradiated to the position P2 to be measured and the photoluminescence is formed, the table 140 moves according to the recorded plurality of positions P2 to be measured, so that the emitted light is irradiated to the other position P2 to be measured. Another photoluminescence is formed. When all of the light-emitting diode chips 210 of the entire object to be detected 200 are completely detected, the detection of the detected object 200 is completed.

綜上所述,本發明之螢光反應檢測系統及方法,係藉由第二光路之配置,使定位裝置能夠感測待檢測物件之影像,並且能夠感測反射光以確定出射光是否照射於待檢測物件之待測位置上,以利出射光及待檢測物件間之定位,進而增進檢測結果的準確度。再者,由於第二光路中配置了具有穿洞之反射鏡,而能夠使待檢測物件之影像及反射光得以順利穿過反射鏡。此外,藉由第三光路之配置可以使螢光反應產生之光致螢光,能夠大部分藉由反射鏡反射至檢測裝置,而使檢測裝置能夠接收到足量的光致螢光,以利檢測結果的準確性。如此一來,在本發明之螢光反應檢測系統中,因為整合了定位裝置的影像擷取及檢測裝置的螢光檢測,而讓使用者能夠在觀察待檢測物件之後,直接進行螢光反應之光致螢光的測量。除了其之定位能夠更加準確,還能進一步減少觀察與檢測間所花費的時間,同時可以確認雷射照射於待檢測物件之位置。In summary, the fluorescence reaction detecting system and method of the present invention enables the positioning device to sense the image of the object to be detected by the arrangement of the second optical path, and can sense the reflected light to determine whether the emitted light is irradiated. The position of the object to be tested is to be tested to facilitate the positioning of the light and the object to be detected, thereby improving the accuracy of the detection result. Furthermore, since the mirror having the hole is disposed in the second optical path, the image of the object to be detected and the reflected light can be smoothly passed through the mirror. In addition, by the arrangement of the third optical path, the photo-induced fluorescence generated by the fluorescent reaction can be mostly reflected by the mirror to the detecting device, so that the detecting device can receive a sufficient amount of photo-induced fluorescence to facilitate The accuracy of the test results. In this way, in the fluorescence reaction detecting system of the present invention, since the image capturing and detecting device fluorescent detection of the positioning device is integrated, the user can directly perform the fluorescence reaction after observing the object to be detected. Photoluminescence measurement. In addition to its more accurate positioning, it can further reduce the time spent between observation and inspection, and at the same time confirm the position of the laser on the object to be detected.

雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

10...螢光反應檢測系統10. . . Fluorescence reaction detection system

100...控制單元100. . . control unit

110...激發光源110. . . Excitation source

111...帶通濾光片111. . . Bandpass filter

120...分光鏡120. . . Beam splitter

121...第一反射面121. . . First reflecting surface

130...反射鏡130. . . Reflector

131...穿洞131. . . Hole through

132...第二反射面132. . . Second reflecting surface

140...工作台140. . . Workbench

150...檢測裝置150. . . Testing device

151...光纖151. . . optical fiber

152、161...長波通濾光片152, 161. . . Long pass filter

153...聚光鏡153. . . Condenser

160...定位裝置160. . . Positioning means

170...輔助照明光源170. . . Auxiliary illumination source

180...聚焦鏡180. . . Focusing mirror

200...待檢測物件200. . . Object to be detected

210...發光二極體晶片210. . . Light-emitting diode chip

L1...第一光路L1. . . First light path

L2...第二光路L2. . . Second light path

L3...第三光路L3. . . Third light path

L4...第四光路L4. . . Fourth light path

P1...交接位置P1. . . Handover location

P2...待測位置P2. . . Position to be tested

W...路徑W. . . path

第1圖所示為依照本發明之實施例之螢光反應檢測系統之架構圖。Figure 1 is a block diagram showing a fluorescent reaction detecting system in accordance with an embodiment of the present invention.

第2圖所示為依照本發明之實施例之待檢測物件200之俯視圖。2 is a top plan view of an object to be inspected 200 in accordance with an embodiment of the present invention.

第3圖所示為第2圖之局部放大圖。Fig. 3 is a partial enlarged view of Fig. 2.

10...螢光反應檢測系統10. . . Fluorescence reaction detection system

100...控制單元100. . . control unit

110...激發光源110. . . Excitation source

111...帶通濾光片111. . . Bandpass filter

120...分光鏡120. . . Beam splitter

121...第一反射面121. . . First reflecting surface

130...反射鏡130. . . Reflector

131...穿洞131. . . Hole through

132...第二反射面132. . . Second reflecting surface

140...工作台140. . . Workbench

150...檢測裝置150. . . Testing device

151...光纖151. . . optical fiber

152、161...長波通濾光片152, 161. . . Long pass filter

153...聚光鏡153. . . Condenser

160...定位裝置160. . . Positioning means

170...輔助照明光源170. . . Auxiliary illumination source

180...聚焦鏡180. . . Focusing mirror

200...待檢測物件200. . . Object to be detected

L1...第一光路L1. . . First light path

L2...第二光路L2. . . Second light path

L3...第三光路L3. . . Third light path

L4...第四光路L4. . . Fourth light path

Claims (10)

一種螢光反應檢測系統,其包括一激發光源、一分光鏡、一反射鏡、一工作台、一定位裝置及一檢測裝置;該激發光源、該分光鏡、該反射鏡及該工作台係依序構成一第一光路;該工作台、該反射鏡、該分光鏡及該定位裝置係依序構成一第二光路;該工作台、該反射鏡及該檢測裝置則依序構成一第三光路;該激發光源會沿著該第一光路發出一出射光,該出射光會穿透該分光鏡及該反射鏡而照射至該工作台;該出射光在照射於該工作台上之一待檢測物件後會形成一反射光,該反射光將沿著該第二光路而照射至該定位裝置;且該出射光在照射於該待檢測物件後會另外形成一光致螢光,該光致螢光會沿著該第三光路而照射至該檢測裝置;其中,該反射鏡具有一穿洞,該穿洞對應於該第一光路與該第二光路,以使得該出射光得以在穿透該分光鏡後,直接照射至該待檢測物件。A fluorescence reaction detecting system includes an excitation light source, a beam splitter, a mirror, a working table, a positioning device and a detecting device; the excitation light source, the beam splitter, the mirror and the table are Forming a first optical path; the working table, the mirror, the beam splitter and the positioning device sequentially form a second optical path; the working table, the mirror and the detecting device sequentially form a third optical path The excitation light source emits an outgoing light along the first optical path, and the emitted light passes through the beam splitter and the mirror to be irradiated to the worktable; the emitted light is irradiated on the worktable to be detected After the object, a reflected light is formed, and the reflected light will be irradiated to the positioning device along the second optical path; and the emitted light will additionally form a photoluminescence after being irradiated to the object to be detected. The light is irradiated to the detecting device along the third optical path; wherein the mirror has a through hole corresponding to the first optical path and the second optical path, so that the emitted light is penetrated Directly after the beam splitter The object to be detected. 如請求項1所述之螢光反應檢測系統,其中該出射光在照射於該工作台上並形成一反射光後,該反射光會經過該第二光路而穿過該分光鏡,並經過該分光鏡而照射至該定位裝置。The fluorescence reaction detecting system of claim 1, wherein after the emitted light is irradiated on the working table and forms a reflected light, the reflected light passes through the beam splitter through the second optical path, and passes through the beam. The beam splitter is irradiated to the positioning device. 如請求項1所述之螢光反應檢測系統,其中在該激發光源及該分光鏡之間,還包括一帶通濾光片。The fluorescence reaction detecting system of claim 1, wherein a band pass filter is further included between the excitation light source and the beam splitter. 如請求項1所述之螢光反應檢測系統,其中在該分光鏡及該定位裝置或該反射鏡及該檢測裝置之間,還包括有一長波通濾光片。The fluorescence reaction detecting system of claim 1, wherein a long pass filter is further included between the beam splitter and the positioning device or the mirror and the detecting device. 如請求項1所述之螢光反應檢測系統,其中在該反射鏡及該檢測裝置之間還包括一聚光鏡。The fluorescence reaction detecting system of claim 1, wherein a condensing mirror is further included between the mirror and the detecting device. 如請求項1所述之螢光反應檢測系統,其中在該反射鏡及該工作台之間還包括一輔助照明光源。The fluorescence reaction detecting system of claim 1, wherein an auxiliary illumination source is further included between the mirror and the table. 如請求項1所述之螢光反應檢測系統,其中在該反射鏡及該工作台之間還包括一聚焦鏡。A fluorescence reaction detecting system according to claim 1, wherein a focusing mirror is further included between the mirror and the table. 一種應用請求項1所述之螢光反應檢測系統之檢測方法,其包括以下步驟:將該出射光沿著該第一光路而照射於該待檢測物件之一待測位置;該定位裝置可以沿著該第二光路來比對該出射光所照射之一位置與該待測位置是否相符;以及當該待測位置與該出射光所照射之該位置相符時,該檢測裝置可以沿著該第三光路來檢測該待測位置之螢光反應。A method for detecting a fluorescence reaction detecting system according to claim 1, comprising the steps of: irradiating the emitted light along the first optical path to a position to be detected of the object to be detected; the positioning device can be along Whether the position of the second light path is more than the position of the emitted light and the position to be tested; and when the position to be tested matches the position illuminated by the emitted light, the detecting device may follow the first Three light paths are used to detect the fluorescence reaction of the position to be tested. 如請求項8所述之檢測方法,其中該出射光所照射之該位置與該待測位置不相符時,則驅動該工作台進行位移,以使得該待檢測物件之該待測位置移至該出射光所照射之該位置。The detecting method according to claim 8, wherein when the position irradiated by the outgoing light does not match the position to be tested, the table is driven to be displaced, so that the position to be tested of the object to be detected is moved to the The position at which the outgoing light is illuminated. 如請求項8所述之檢測方法,其中還包括調整該工作台之位置,以使得該定位裝置感測並記錄該待檢測物件之複數個待測位置,並於該檢測裝置沿著該第三光路來檢測該待測位置之螢光反應之後,根據所記錄之該些待測位置來移動該工作台,以使得該檢測裝置得以沿著該第三光路來檢測另一個該待測位置之螢光反應。The detecting method of claim 8, further comprising adjusting a position of the working table, so that the positioning device senses and records a plurality of to-be-measured positions of the object to be detected, and the third detecting device is along the third After detecting the fluorescence reaction of the position to be tested, the optical path is moved according to the recorded positions to be tested, so that the detecting device can detect another fire of the position to be tested along the third optical path. Photoreaction.
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TWI753131B (en) * 2017-03-24 2022-01-21 日商東芝照明技術股份有限公司 detection device
US11694324B2 (en) 2019-03-28 2023-07-04 Hamamatsu Photonics K.K. Inspection apparatus and inspection method
TWI814365B (en) * 2022-04-29 2023-09-01 由田新技股份有限公司 Optical inspection system based on laser light source and laser optical system

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Publication number Priority date Publication date Assignee Title
TWI753131B (en) * 2017-03-24 2022-01-21 日商東芝照明技術股份有限公司 detection device
US11694324B2 (en) 2019-03-28 2023-07-04 Hamamatsu Photonics K.K. Inspection apparatus and inspection method
TWI819202B (en) * 2019-03-28 2023-10-21 日商濱松赫德尼古斯股份有限公司 Inspection equipment and inspection methods
TWI814365B (en) * 2022-04-29 2023-09-01 由田新技股份有限公司 Optical inspection system based on laser light source and laser optical system

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