TW201330984A - Abrasive tool and manufacturing method thereof - Google Patents

Abrasive tool and manufacturing method thereof Download PDF

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Publication number
TW201330984A
TW201330984A TW101101707A TW101101707A TW201330984A TW 201330984 A TW201330984 A TW 201330984A TW 101101707 A TW101101707 A TW 101101707A TW 101101707 A TW101101707 A TW 101101707A TW 201330984 A TW201330984 A TW 201330984A
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abrasive
abrasive particles
conductive substrate
polymer material
material layer
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TW101101707A
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Chinese (zh)
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jing-rui Shi
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jing-rui Shi
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Abstract

An abrasive tool and its manufacturing method are disclosed, the manufacturing method comprising the steps of disposing a polymer material layer on a conductive substrate, wherein the polymer material layer is disposed with a plurality of pores based upon pattern definitions of a polygon or a polar array; at the same time, enhancing the wettability of a plurality of abrasive particles by utilizing chemical surface treatment method; disposing at least two abrasive particles in each pore; then, fixing the particles in the pore by a composite platting layer; and finally, removing the polymer material layer to form a surface having a plurality of abrasive regions on the conductive substrate. The invention utilizes the pores through pattern definition to plan the area, pitch, and distributed density of the abrasive regions, and the adhesion ability of the abrasive particles is improved by chemical surface treatment to greatly enhance its manufacturing quality.

Description

研磨工具及其製造方法Grinding tool and method of manufacturing same

本發明屬於晶圓製程中之研磨技術領域,尤指一種可大幅提高晶圓拋光效率及平坦化的作業品質之研磨工具及其製造方法。The invention belongs to the field of polishing technology in a wafer manufacturing process, and particularly relates to an abrasive tool capable of greatly improving wafer polishing efficiency and flattening work quality and a manufacturing method thereof.

按,隨著時代的求新演進,以及高科技電子消費市場的競爭,為了在更小的面積上堆積更密集的線路,晶圓表面的氧化層(oxide layer)與金屬層(metal layer)的全面平坦化(Planarization)技術亦愈趨重要。由於晶片上的積體電路線幅不斷地細小化,為解決微影製程中的高低差所產生之聚焦困難問題,一般係透過化學機械研磨技術(Chemical Mechanical Polishing,CMP)來平坦化該晶圓之表面,CMP所需之設備包含設有一研磨墊(polish pad)之一研磨平台(platen),以及固定該晶圓及施加壓力之一晶圓承載器(carrier),該晶圓承載器係利用抽真空而吸住該晶圓背面,而利用研磨平台之該研磨墊與該晶片承載器之間的相對運動,同時透過添加研磨劑(slurry)以產生適當的化學反應進行平坦化作業,使該晶圓之氧化層與金屬層被拋光、磨平,有效減少設計佈局限制、提升配線密度pattern density)、降低缺陷密度(defect density)和提升製程良率。According to the evolution of the times and the competition in the high-tech electronic consumer market, in order to accumulate more dense lines on a smaller area, the oxide layer and the metal layer of the wafer surface Planarization technology is also becoming more important. Since the integrated circuit line width on the wafer is continuously miniaturized, in order to solve the problem of focusing difficulty caused by the height difference in the lithography process, the wafer is generally planarized by Chemical Mechanical Polishing (CMP). The surface, the equipment required for CMP includes a polishing plate having a polishing pad, and a wafer carrier that fixes the wafer and applies pressure, and the wafer carrier utilizes Vacuuming and sucking the back side of the wafer, and utilizing the relative movement between the polishing pad of the polishing platform and the wafer carrier, while performing flattening operation by adding a slurry to generate an appropriate chemical reaction, The oxide layer and the metal layer of the wafer are polished and smoothed, which effectively reduces the design layout limitation, increases the pattern density, reduces the defect density, and improves the process yield.

然而,該研磨墊在進行一段時間的研磨之後,其表面花紋和表面粗糙度,會因為持續拋光的機械動作而使該晶圓磨下的碎屑,或是研磨液與晶圓上的金屬層產生化學產物,經過研磨行為使產物或碎屑沉積於該研磨墊表面,導致晶圓表面與研磨墊間的接觸面積增加,使得研磨液停留的空間減少導致平坦化的效果低落。因而需透過研磨工具進行修整,這些研磨工具因使用鑽石顆粒設置於一圓盤狀的基材上,故也被稱作「鑽石碟(Diamond Disk)」,其係用來間歇性或是同步性修整該研磨墊的表面,以維持該研磨墊之粗糙表面及恢復其拋光作用並延長其壽命,大幅提高晶圓拋光的效率及平坦化的作業品質,亦可排除進行CMP製程後的積屑問題。However, after grinding for a period of time, the surface pattern and surface roughness of the polishing pad may cause debris of the wafer to be ground due to mechanical action of continuous polishing, or a metal layer on the polishing liquid and the wafer. The chemical product is generated, and the product or debris is deposited on the surface of the polishing pad by grinding action, resulting in an increase in the contact area between the surface of the wafer and the polishing pad, so that the space in which the slurry stays is reduced, resulting in a low leveling effect. Therefore, it needs to be trimmed by a grinding tool. Because these diamond tools are arranged on a disc-shaped substrate, they are also called "Diamond Disk", which is used for intermittent or synchronous. Trimming the surface of the polishing pad to maintain the rough surface of the polishing pad and restore its polishing effect and prolong its life, greatly improve the efficiency of wafer polishing and flattening work quality, and eliminate the problem of chip formation after CMP process .

請參閱第1、2圖,係為習知研磨工具的結構示意圖及其於電子顯微鏡下的局部放大照片。如圖中所示,該研磨工具1係包括一金屬基材11,並透過合金硬銲的方式,將複數個研磨顆粒12(abrasive particles)結合於該金屬基材11表面之一銲料層13內,由於該等研磨顆粒12係隨機(random)排列之不規則方式固著於該金屬基材11上,其有排列雜亂與分佈不均等問題,使得每一研磨顆粒12所承受之研磨力道也不同,且硬銲的附著強度不足易造成該等研磨顆粒12的脫落問題,而影響該研磨工具1的使用壽命及其研磨特性。Please refer to Figures 1 and 2 for a schematic view of the structure of a conventional abrasive tool and a partial enlarged photograph of it under an electron microscope. As shown in the figure, the abrasive tool 1 comprises a metal substrate 11 and a plurality of abrasive particles 12 are bonded to one of the solder layers 13 on the surface of the metal substrate 11 by means of alloy brazing. Since the abrasive particles 12 are fixed to the metal substrate 11 in an irregular manner in a random arrangement, the arrangement of the abrasive particles 12 is uneven and unevenly distributed, so that the grinding force of each of the abrasive particles 12 is different. And the insufficient adhesion strength of the brazing is likely to cause the problem of the falling off of the abrasive particles 12, which affects the service life of the abrasive tool 1 and its grinding characteristics.

遂提出利用具有固定網目之一篩網架設於該金屬基材11上,使該等研磨顆粒12依照網目的排列規則地定位後,再利用合金粉的燒結製程將該等研磨顆粒12固定於該金屬基材11上,例如:美國專利4,925,457與5,092,910「Abrasive tool and method for making」係揭露一種利用篩網使該等研磨顆粒12呈現規則排列圖案而製的研磨工具1及其燒結製程。亦有如中華民國專利第436375號「形成化學機械研磨墊之研磨工具的方法」,係利用電腦視覺檢視系統對該等研磨顆粒12作定位,使其規則地植佈在該金屬基材11上者。或如中華民國專利第412461號「修整晶圓研磨墊的鑽石碟及其製法」,及中華民國專利第394723號「具規則性排列之磨料顆粒的研磨工具及其製造方法」,均已揭露將該等研磨顆粒12作規則性排列或均勻分佈之特徵。但,使用篩網的方式因受到網目大小的物理限制,目前並無法適用於小尺寸的研磨顆粒12;另一方面,由於上述製程須經過燒結製程,燒結溫度約為1050℃,而造成該等研磨顆粒12產生碳化現象甚至斷裂,且該等研磨顆粒12的大小分佈、排列態樣或是分佈密度僅具有單一形式,並無法隨著應用面而進行調整,故如何對該研磨墊上的該等研磨顆粒12作最佳化設計,一直是業界所努力的目標。遂Proposing that a sieve having one of the fixed meshes is mounted on the metal substrate 11 so that the abrasive particles 12 are regularly positioned according to the arrangement of the mesh, and then the abrasive particles 12 are fixed by the sintering process of the alloy powder. On the metal substrate 11, for example, U.S. Patent Nos. 4,925,457 and 5,092,910, "Abrasive tool and method for making", disclose an abrasive tool 1 made by using a screen to render the abrasive particles 12 in a regular arrangement pattern and a sintering process thereof. There is also a method of forming a polishing tool for a chemical mechanical polishing pad, such as the method of locating the abrasive particles 12 by a computer vision inspection system, which is regularly implanted on the metal substrate 11 as in the Republic of China Patent No. 436375. . Or, as in the Republic of China Patent No. 412461, "Diamond Discs for Machining Wafer Pads and Methods of Making Same", and Republic of China Patent No. 394723, "Abrasive Tools with Regularly Arranged Abrasive Particles and Their Manufacturing Methods", have been disclosed The abrasive particles 12 are characterized by regular or uniform distribution. However, the use of the screen is limited by the physical size of the mesh, and currently cannot be applied to the small-sized abrasive particles 12; on the other hand, since the above process has to undergo a sintering process, the sintering temperature is about 1050 ° C, which causes these The abrasive particles 12 are carbonized or even broken, and the size distribution, arrangement or distribution density of the abrasive particles 12 has only a single form, and cannot be adjusted according to the application surface, so how to treat the polishing pad The optimized design of the abrasive particles 12 has been the goal of the industry.

有鑑於此,本發明之一目的,旨在提供一種研磨工具之製造方法,係透過蝕刻或曝光顯影等方式,將複數個研磨顆粒所形成之研磨面排列方式,如:圖案(pattern)形狀、設置間距(pitch)、粒度(particle size)、露出高度(protrusion height)及均勻性等圖形定義,而製得最佳化之一研磨工具。In view of the above, an object of the present invention is to provide a method for manufacturing an abrasive tool, which is a pattern of a plurality of abrasive grains formed by etching or exposure development, such as a pattern shape. One of the grinding tools is optimized by setting a pattern definition such as pitch, particle size, protrusion height, and uniformity.

本發明之次一目的,旨在提供一種研磨工具之製造方法,俾利用化學表面處理的方式,先對該等研磨顆粒進行表面修飾,進一步提高固著時的附著能力,而避免使用時的脫落情況。A second object of the present invention is to provide a method for manufacturing an abrasive tool, which uses a chemical surface treatment method to first surface-modify the abrasive particles to further improve adhesion during fixation, thereby avoiding shedding during use. Happening.

本發明之另一目的,旨在提供一種研磨工具之製造方法,俾利用低溫電鑄的方式,將該等研磨顆粒以一複合鍍層固定於一導電基板上,以避免該等研磨顆粒因高溫而產生的碳化問題。Another object of the present invention is to provide a method for manufacturing an abrasive tool, which is fixed on a conductive substrate by a composite plating layer by means of low temperature electroforming to prevent the abrasive particles from being heated due to high temperature. The carbonization problem that arises.

為達上述目的,本發明之研磨工具之製造方法,其包括:提供一導電基板;設置一高分子材料層於該導電基板上,且該高分子材料層係根據多邊形或環形陣列之圖形定義而設有複數個孔洞,該等孔洞係完全穿透該高分子材料層而到達該導電基板;利用化學表面處理方法對複數個研磨顆粒進行表面修飾,供以使該等研磨顆粒具有高濕潤性;設置至少二個以上之該等研磨顆粒於該各個孔洞內;設置一複合鍍層於該等孔洞內,以將該等研磨顆粒固定於該等孔洞內;及去除該高分子材料層,以形成一具有呈多邊形或環形陣列之複數個研磨區域的一表面。In order to achieve the above object, a method for manufacturing an abrasive tool according to the present invention includes: providing a conductive substrate; and providing a polymer material layer on the conductive substrate, wherein the polymer material layer is defined according to a pattern of a polygon or an annular array. a plurality of holes are formed, the holes are completely penetrated to the conductive material layer to reach the conductive substrate; and the plurality of abrasive particles are surface-modified by a chemical surface treatment method to provide the abrasive particles with high wettability; And at least two or more of the abrasive particles are disposed in the respective holes; a composite plating layer is disposed in the holes to fix the abrasive particles in the holes; and the polymer material layer is removed to form a hole A surface having a plurality of abrasive regions in a polygonal or annular array.

於一實施例中,該等孔洞係選自如:曝光顯影、微蝕刻、壓印、網印、點墨或熱壓等方法之其中之一者,而設置於該高分子材料層上,且該高分子材料層的厚度可係依研磨顆粒徑之1/2~1/3倍來決定之,故範圍可為5~180 μm,而本發明之具體實施例為75μm。而該導電基板係選自如:金屬材質、導電陶瓷材質或表面具有高導電材料之高硬度塑膠材料等其中之一者,且該金屬材質係選自如:不鏽鋼、鋁合金、鈦合金或合金鋼其中之一者,或該導電陶瓷材質係選自如:氧化物陶瓷、碳化物陶瓷或氮化物陶瓷其中之一者。In one embodiment, the holes are selected from one of a method such as exposure development, micro etching, embossing, screen printing, dot ink or hot pressing, and are disposed on the polymer material layer, and the hole is The thickness of the polymer material layer may be determined by 1/2 to 1/3 times the diameter of the abrasive particles, so the range may be 5 to 180 μm, and the specific embodiment of the present invention is 75 μm. The conductive substrate is selected from the group consisting of a metal material, a conductive ceramic material or a high-hardness plastic material having a highly conductive material on the surface, and the metal material is selected from the group consisting of stainless steel, aluminum alloy, titanium alloy or alloy steel. In one case, the conductive ceramic material is selected from one of, for example, an oxide ceramic, a carbide ceramic or a nitride ceramic.

其中,於「利用化學表面處理方法對複數個研磨顆粒進行表面修飾,供以使該等研磨顆粒具有高濕潤性」之步驟中,係透過HF+H2SO4之混合液體浸泡處理而提高該等研磨顆粒之濕潤性。Wherein, in the step of "surface-modifying a plurality of abrasive particles by a chemical surface treatment method to provide high wettability of the abrasive particles", the mixed liquid is immersed by HF + H 2 SO 4 to improve the The wettability of the abrasive particles.

其中,於「去除該高分子材料層,以形成一具有呈多邊形或環形陣列之複數個研磨區域的一表面」之步驟中,係選自如:電子轟擊或有機溶劑溶解等方法其中之一者而將該高分子材料層去除。Wherein, in the step of "removing the polymer material layer to form a surface having a plurality of polishing regions having a polygonal or annular array", it is selected from one of methods such as electron bombardment or organic solvent dissolution. The polymer material layer is removed.

本發明之一目的,旨在提供一種研磨工具,俾利用前述之製造方法而製得,而有使用時不易脫落,且其研磨面的排列方式,如:圖案(pattern)形狀、設置間距(pitch)、粒度(particle size)、露出高度(protrusion height)及均勻性等均為最佳化設置。An object of the present invention is to provide an abrasive tool which is produced by the above-described manufacturing method, and which is not easily peeled off during use, and the arrangement of the polished surfaces thereof, such as a pattern shape and a pitch (pitch) ), particle size, protrusion height, and uniformity are all optimal settings.

為達上述目的,本發明之研磨工具係包括:一導電基板;複數個複合鍍層,係根據多邊形或環形陣列之圖形定義而設於該導電基板上,該等複合鍍層係凸出於該導電基板表面;及複數個研磨顆粒,係以至少二個以上的數量而設於該等複合鍍層上,而於該導電基板上形成一研磨面。In order to achieve the above object, the polishing tool of the present invention comprises: a conductive substrate; a plurality of composite plating layers are disposed on the conductive substrate according to a pattern definition of a polygon or an annular array, the composite plating layer protruding from the conductive substrate And a plurality of abrasive particles are disposed on the composite plating layer in an amount of at least two or more, and a polishing surface is formed on the conductive substrate.

於一實施例中,該等複合鍍層係圓柱狀結構體,而該研磨顆粒係選自如:鑽石、碳化物陶瓷粉末、氧化物陶瓷粉末或氮化物陶瓷粉末其中之一者,且其粒徑係介於10奈米至500微米。In one embodiment, the composite plating layer is a cylindrical structure, and the abrasive particles are selected from one of, for example, diamond, carbide ceramic powder, oxide ceramic powder or nitride ceramic powder, and the particle size thereof is Between 10 nm and 500 microns.

綜上所述,本發明具有以下有益的效果:本發明的研磨工具之製造方法,主要係利用經過如:圖案(pattern)形狀、設置間距(pitch)、粒度(particle size)、露出高度(protrusion height)及均勻性等圖形定義之成型技術(包括蝕刻或是曝光顯影)及低溫電鑄(電鍍)的方法,同時,該等研磨顆粒透過化學表面修飾後而具有高溼潤性,不僅可提高該複合鍍層及該研磨顆粒間的附著效果。且,因為不採用傳統燒結的高溫製程而將該等研磨顆粒固定於該基材上,故能避免該等研磨顆粒易發生斷裂及碳化等問題。除此之外,本發明所使用的圖形定義成型方法,可隨需求而進行各項調整該等孔洞的陣列態樣,如:該等孔洞的分佈密度,該各孔洞的開口大小及該相鄰之各孔洞的間距、或是該等孔洞陣列的分佈方式等,使得本發明所製得的研磨工具在形成研磨面時可具有分佈密度的變化、不同顆粒的變化,而有良好的排列組合而達成高效率的研磨品質,均係傳統製造方法所無法達成,該每一孔洞內均係由多個研磨顆粒結合一複合鍍層所組成,可以增加研磨面積,並有效降低單一研磨顆粒的負載力,使該等研磨顆粒的耗損降低而提高該研磨工具的使用壽命。In summary, the present invention has the following beneficial effects: the manufacturing method of the grinding tool of the present invention mainly utilizes, for example, a pattern shape, a pitch, a particle size, and a protrusion height. Height) and uniformity and other graphic definition molding techniques (including etching or exposure development) and low-temperature electroforming (electroplating) methods. At the same time, these abrasive particles have high wettability after being chemically surface-modified, which not only improves the Composite coating and adhesion between the abrasive particles. Moreover, since the abrasive particles are fixed to the substrate without using a high-temperature process of conventional sintering, problems such as breakage and carbonization of the abrasive particles are avoided. In addition, the pattern defining forming method used in the present invention can perform various adjustments on the array patterns of the holes according to requirements, such as the distribution density of the holes, the opening size of the holes, and the adjacent The spacing of the holes, or the distribution of the holes, and the like, so that the grinding tool produced by the present invention can have a change in distribution density, a change in different particles, and a good arrangement in the formation of the abrasive surface. Achieving high-efficiency grinding quality is not achieved by conventional manufacturing methods. Each hole is composed of a plurality of abrasive particles combined with a composite coating layer, which can increase the grinding area and effectively reduce the load of a single abrasive particle. The wear of the abrasive particles is reduced to increase the useful life of the abrasive tool.

為使 貴審查委員能清楚了解本發明之內容,僅以下列說明搭配圖式,敬請參閱。In order for your review board to have a clear understanding of the contents of the present invention, please refer to the following description.

請參閱第3,4~9圖,係為本發明較佳實施例的步驟流程圖,以及對應各步驟的狀態示意圖。如圖中所示,本發明之研磨工具之製造方法係包括以下步驟:Please refer to FIGS. 3, 4-9, which are flowcharts of steps of a preferred embodiment of the present invention, and a schematic diagram of states corresponding to the respective steps. As shown in the figure, the manufacturing method of the grinding tool of the present invention comprises the following steps:

S01:提供一導電基板2。該導電基板2係選自如:金屬材質、陶瓷材質或表面具有高導電材料之高硬度塑膠材料(如PCB)等其中之一者。應注意的是,該金屬材質係選自如:不鏽鋼、鋁合金、鈦合金或合金鋼其中之一者,又或該陶瓷材質係選自如:氧化物陶瓷、碳化物陶瓷或氮化物陶瓷其中之一者;換言之,該導電基板2的材質不限,但必須具有一定的硬度,供以支撐研磨作業時所產生的正向壓力,且表面必須具有良好的導電特性,如第4圖所示,本發明之該導電基板2係選用鎳基板,且其製成圓盤狀結構體。S01: Providing a conductive substrate 2. The conductive substrate 2 is selected from, for example, a metal material, a ceramic material, or a high-hardness plastic material (such as a PCB) having a highly conductive material on its surface. It should be noted that the metal material is selected from one of, for example, stainless steel, aluminum alloy, titanium alloy or alloy steel, or the ceramic material is selected from one of oxide ceramics, carbide ceramics or nitride ceramics. In other words, the material of the conductive substrate 2 is not limited, but must have a certain hardness to support the forward pressure generated during the grinding operation, and the surface must have good electrical conductivity characteristics, as shown in FIG. In the conductive substrate 2 of the invention, a nickel substrate is used, and it is made into a disk-shaped structure.

S02:設置一高分子材料層3於該導電基板2上,且該高分子材料層3係根據多邊形或環形陣列之圖形定義而設有複數個孔洞31,該等孔洞31係完全穿透該高分子材料層3而到達該導電基板2。如第5圖所示之該等孔洞31係選自如:曝光顯影、微蝕刻、壓印、網印、點墨或熱壓等方法之其中之一者,以環狀陣列的排列方式,由中心向外輻射等距排列而設置於該高分子材料層3上,且該高分子材料層3的厚度係為75μm。應注意的是,該高分子材料層3係選自如:感光型高分子材料或塑膠等,最常見的是:光阻劑或感熱型塑膠,其具有易成型及易移除等特性。換言之,本發明之具體實施時,係將該高分子材料層3預先塗佈成型於該導電基板2之一面,復利用蝕刻方法蝕刻該高分子材料層3,以形成該等孔洞31;或是先塗佈一光阻劑於該導電基材2之一面,經固化後,再利用曝光顯影配合濕蝕刻方法,於該光阻劑上成型該等孔洞31;又或是使用預先開設有該等孔洞31之一高分子材料層3,固設於該導電基板2之一面。使該等孔洞31所形成的孔洞陣列可以在該導電基板2之表面成型為規則排列,且形狀、間距可以自由調整的孔洞陣列,例如:每一孔洞31的開口大小係可根據研磨顆粒之粒徑大小1~1.5倍進行調整,於本發明之實施例中,該等孔洞31之開口大小最佳為130~300μm。S02: a polymer material layer 3 is disposed on the conductive substrate 2, and the polymer material layer 3 is provided with a plurality of holes 31 according to a pattern definition of a polygon or an annular array, and the holes 31 completely penetrate the height The molecular material layer 3 reaches the conductive substrate 2. The holes 31 as shown in FIG. 5 are selected from one of, for example, exposure development, micro-etching, embossing, screen printing, dot ink or hot pressing, in an annular array arrangement, by the center. The outward radiation is arranged equidistantly on the polymer material layer 3, and the thickness of the polymer material layer 3 is 75 μm. It should be noted that the polymer material layer 3 is selected from, for example, a photosensitive polymer material or a plastic material, and the most common one is a photoresist or a heat-sensitive plastic, which has characteristics such as easy molding and easy removal. In other words, in the specific implementation of the present invention, the polymer material layer 3 is pre-coated on one surface of the conductive substrate 2, and the polymer material layer 3 is etched by an etching method to form the holes 31; First, a photoresist is coated on one surface of the conductive substrate 2, and after curing, the holes 31 are formed on the photoresist by exposure and development and wet etching; or the pre-opening is used. One polymer material layer 3 of one of the holes 31 is fixed to one surface of the conductive substrate 2. The array of holes formed by the holes 31 can be formed into a regular array of holes on the surface of the conductive substrate 2, and the shape and spacing can be freely adjusted. For example, the opening size of each hole 31 can be based on the particles of the abrasive particles. The diameter of the hole 31 is adjusted from 1 to 1.5 times. In the embodiment of the present invention, the opening size of the holes 31 is preferably 130 to 300 μm.

S03:利用化學表面處理方法對複數個研磨顆粒4進行表面修飾,供以使該等研磨顆粒4具有高濕潤性。如第6圖所示,本發明係透過HF+H2SO4之混合液體浸泡處理而提高該等研磨顆粒4之濕潤性。應注意的是,該等研磨顆粒4係選自如鑽石、碳化物陶瓷粉末、氧化物陶瓷粉末或氮化物陶瓷粉末其中之一者,且該等研磨顆粒4的粒徑範圍係介於10奈米至500微米之間,本發明係選用微米等級的鑽石微粒。S03: Surface-modifying a plurality of abrasive particles 4 by a chemical surface treatment method to impart high wettability to the abrasive particles 4. As shown in Fig. 6, the present invention enhances the wettability of the abrasive particles 4 by a mixed liquid immersion treatment of HF + H 2 SO 4 . It should be noted that the abrasive particles 4 are selected from one of, for example, a diamond, a carbide ceramic powder, an oxide ceramic powder or a nitride ceramic powder, and the abrasive particles 4 have a particle size range of 10 nm. Between 500 microns and micrometers of diamond particles are used in the present invention.

S04:設置至少二個以上之該等研磨顆粒4於該各個孔洞內31。如第7圖所示,本步驟主要係將該等研磨顆粒4以複數型態置放入該每一孔洞31內,本發明中係於該每一孔洞31內設置有5個研磨顆粒4。S04: At least two or more of the abrasive particles 4 are disposed in the respective holes 31. As shown in Fig. 7, this step mainly involves placing the abrasive particles 4 into the respective holes 31 in a plurality of forms. In the present invention, five abrasive particles 4 are disposed in each of the holes 31.

S05:設置一複合鍍層5於該等孔洞31內,以將該等研磨顆粒4固定於該等孔洞31內。如第8圖所示,本發明係利用低溫電鑄的方法(亦即電鍍),將該複合鍍層5填充設於該等研磨顆粒4與該導電基板2的接觸位置,並利用該複合鍍層5包覆該等研磨顆粒4之一部份(下半部),使該等研磨顆粒4裸露於其外的部分作為研磨之功能,其中電鑄過程中所必須進行的電隔離步驟係為公知常識,在此不多加贅述。應注意的是,本發明並不限定其固定方法,其他如化學鍍方法、物理氣相沈積方法(PVD)、熱相埋或化學氣相沈積方法(CVD)等,均可實施於本發明,且根據各種實際應用,該複合鍍層5係選自金屬材料(如:鈦、銅、鋁等)、陶瓷材料、複合材料或合金屬材料等。S05: A composite plating layer 5 is disposed in the holes 31 to fix the abrasive particles 4 in the holes 31. As shown in FIG. 8, the present invention utilizes a method of low temperature electroforming (ie, electroplating), and the composite plating layer 5 is filled in a contact position between the abrasive particles 4 and the conductive substrate 2, and the composite plating layer 5 is utilized. Coating a portion (lower half) of the abrasive particles 4 to expose the portions of the abrasive particles 4 to the outside as a function of grinding, wherein the electrical isolation step necessary in the electroforming process is common knowledge I will not repeat them here. It should be noted that the present invention is not limited to the fixing method, and other methods such as an electroless plating method, a physical vapor deposition method (PVD), a thermal buried method, or a chemical vapor deposition method (CVD) may be implemented in the present invention. And according to various practical applications, the composite plating layer 5 is selected from metal materials (such as: titanium, copper, aluminum, etc.), ceramic materials, composite materials or metal materials.

S06:去除該高分子材料層3,以形成具有呈多邊形或環形陣列之複數個研磨區域的一表面。如第9圖所示,本發明欲去除該高分子材料層3之手段係選自如:電子轟擊或有機溶劑溶解等方法其中之一者,以將該高分子材料層3去除,而僅留下該等複合鍍層5、該等研磨顆粒4及該導電基板2,請一併參閱第10圖,係為本發明較佳實施例之研磨工具在電子顯微鏡下的結構。如圖中所示,該研磨工具係包括該導電基板2、該等複合鍍層5及該等研磨顆粒4,其中該等複合鍍層5及該等研磨顆粒4係依據圖形定義而完成之陣列排列,以作為研磨面使用,且該等導電基板2之某些區域係不具有該等複合鍍層5及該等研磨顆粒4,以作為研磨作業時的研磨區域,剩下該導電基板2裸露之區域稱之為鏤空部,在研磨作業的操作中可用於提高研磨時的排屑能力。S06: removing the polymer material layer 3 to form a surface having a plurality of polishing regions in a polygonal or annular array. As shown in FIG. 9, the means for removing the polymer material layer 3 of the present invention is selected from one of methods such as electron bombardment or organic solvent dissolution, to remove the polymer material layer 3, leaving only For the composite plating layer 5, the polishing particles 4, and the conductive substrate 2, refer to FIG. 10, which is a structure of the polishing tool according to the preferred embodiment of the present invention under an electron microscope. As shown in the figure, the polishing tool comprises the conductive substrate 2, the composite plating layer 5 and the abrasive particles 4, wherein the composite plating layer 5 and the abrasive particles 4 are arranged according to a pattern definition. It is used as a polishing surface, and some areas of the conductive substrate 2 do not have the composite plating layer 5 and the abrasive particles 4 as the polishing area during the polishing operation, and the exposed area of the conductive substrate 2 is left. It is a hollow part and can be used to improve the chip removal ability during grinding in the operation of the grinding operation.

於一實施例中,該等複合鍍層5係圓柱狀結構體,綜上,本發明係具有下列優點:In one embodiment, the composite plating layer 5 is a cylindrical structure. In summary, the present invention has the following advantages:

1、本發明所使用之製程步驟均屬於低溫製程,包括圖形定義的成型技術以及低溫電鑄製程,因而能避免該等研磨顆粒4的碳化影響,進而可使本發明之研磨工具有較佳之研磨特性。1. The process steps used in the present invention are all low temperature processes, including a pattern-defined molding technique and a low-temperature electroforming process, thereby avoiding the carbonization effect of the abrasive particles 4, thereby further improving the grinding tool of the present invention. characteristic.

2、本發明所使用的圖形定義成型技術,可依據需求而於該導電基板2表面的該高分子材料層3形成所需之該等孔洞31,其排列方式可依據實際應用面的需求而加以調整,如:可調整該等研磨顆粒4之間的間距大小、可固著尺寸較小的該等研磨顆粒4於該導電基板2上,或是各種變化圖樣的分佈設計等,而提高其實際應用時的研磨能力。2. The pattern defining molding technique used in the present invention can form the holes 31 required for the polymer material layer 3 on the surface of the conductive substrate 2 according to requirements, and the arrangement manner can be determined according to the requirements of the practical application surface. Adjustment, for example, the size of the spacing between the abrasive particles 4, the smaller size of the abrasive particles 4 on the conductive substrate 2, or the distribution design of various patterns, etc., can be adjusted to improve the actual Grinding ability when applied.

3、本發明亦可利用該高分子材料層3之該等孔洞31的設置方式,以及該等複合鍍層5的厚度,控制該等研磨顆粒4的排列態樣、露出多寡及其均勻度,使得研磨效率及速度變得可預測,且其製造品質也能夠受到控制。3. The present invention can also utilize the manner in which the holes 31 of the polymer material layer 3 are disposed, and the thickness of the composite plating layers 5, to control the arrangement of the abrasive particles 4, the amount of the abrasive particles 4, and the uniformity thereof. The grinding efficiency and speed become predictable, and the manufacturing quality can be controlled.

惟,以上所述者,僅為本發明之較佳實施例而已,並非用以限定本發明實施之範圍,故該所屬技術領域中具有通常知識者,或是熟悉此技術所作出等效或輕易的變化者,在不脫離本發明之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本發明之專利範圍內。However, the above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the practice of the present invention, so that it is common knowledge in the art or equivalent or easy to be familiar with the technology. Variations and modifications made by those skilled in the art without departing from the spirit and scope of the invention are intended to be included within the scope of the invention.

【習知】[Practical]

1...研磨工具1. . . Grinding tool

11...金屬基材11. . . Metal substrate

12...研磨顆粒12. . . Abrasive particles

13...銲料層13. . . Solder layer

【本發明】【this invention】

S01~S06...步驟S01~S06. . . step

2...導電基板2. . . Conductive substrate

3...高分子材料層3. . . Polymer layer

31...孔洞31. . . Hole

4...研磨顆粒4. . . Abrasive particles

5...複合鍍層5. . . Composite coating

第1圖,為習知研磨工具的結構示意圖。Figure 1 is a schematic view showing the structure of a conventional grinding tool.

第2圖,為習知研磨工具於電子顯微鏡下的局部放大照片。Figure 2 is a partial enlarged photograph of a conventional abrasive tool under an electron microscope.

第3圖,為本發明較佳實施例的步驟流程圖。Figure 3 is a flow chart showing the steps of a preferred embodiment of the present invention.

第4圖,為對應步驟S01的狀態示意圖。Fig. 4 is a schematic diagram showing the state corresponding to step S01.

第5圖,為對應步驟S02的狀態示意圖。Fig. 5 is a schematic diagram showing the state corresponding to step S02.

第6圖,為對應步驟S03的狀態示意圖。Fig. 6 is a schematic diagram showing the state corresponding to step S03.

第7圖,為對應步驟S04的狀態示意圖。Fig. 7 is a schematic diagram showing the state corresponding to step S04.

第8圖,為對應步驟S05的狀態示意圖。Figure 8 is a schematic diagram showing the state corresponding to step S05.

第9圖,為對應步驟S06的狀態示意圖。Figure 9 is a schematic diagram showing the state corresponding to step S06.

第10圖,為本發明較佳實施例之研磨工具於電子顯微鏡下的局部放大照片。Figure 10 is a partially enlarged photograph of the abrasive tool of the preferred embodiment of the present invention under an electron microscope.

S01~S06...步驟S01~S06. . . step

Claims (10)

一種研磨工具之製造方法,其包括:提供一導電基板;設置一高分子材料層於該導電基板上,且該高分子材料層係根據多邊形或環形陣列之圖形定義而設有複數個孔洞,該等孔洞係完全穿透該高分子材料層而到達該導電基板;利用化學表面處理方法對複數個研磨顆粒進行表面修飾,供以使該等研磨顆粒具有高濕潤性;設置至少二個以上之該等研磨顆粒於該各個孔洞內;設置一複合鍍層於該等孔洞內,以將該等研磨顆粒固定於該等孔洞內;及去除該高分子材料層,以形成具有呈多邊形或環形陣列之複數個研磨區域的一表面。A method for manufacturing an abrasive tool, comprising: providing a conductive substrate; providing a polymer material layer on the conductive substrate, wherein the polymer material layer is provided with a plurality of holes according to a pattern definition of a polygon or an annular array, The holes are completely penetrated the polymer material layer to reach the conductive substrate; the surface of the plurality of abrasive particles is surface-modified by a chemical surface treatment method to provide the abrasive particles with high wettability; Grown particles are disposed in the respective holes; a composite plating layer is disposed in the holes to fix the abrasive particles in the holes; and the polymer material layer is removed to form a plurality of layers having a polygonal or circular array a surface of the abrasive area. 如申請專利範圍第1項所述之研磨工具之製造方法,其中,該等孔洞係選自如:曝光顯影、微蝕刻、壓印、網印、點墨或熱壓等方法之其中之一者,而設置於該高分子材料層上。The manufacturing method of the grinding tool according to the first aspect of the invention, wherein the holes are selected from one of a method such as exposure development, micro etching, imprinting, screen printing, dot ink or hot pressing, And disposed on the polymer material layer. 如申請專利範圍第1項所述之研磨工具之製造方法,其中,該高分子材料層的厚度係為依據研磨顆粒之1/2~1/3倍的範圍為規範,範圍為5~180μm。The method for producing a polishing tool according to claim 1, wherein the thickness of the polymer material layer is in a range of 1/2 to 1/3 times the polishing particles, and the range is 5 to 180 μm. 如申請專利範圍第1項所述之研磨工具之製造方法,其中,於「利用化學表面處理方法對複數個研磨顆粒進行表面修飾,供以使該等研磨顆粒具有高濕潤性」之步驟中,係透過HF+H2SO4之混合液體浸泡處理而提高該等研磨顆粒之濕潤性。The method for producing an abrasive tool according to claim 1, wherein in the step of "surface-modifying a plurality of abrasive particles by a chemical surface treatment method to provide high wettability of the abrasive particles", The wettability of the abrasive particles is improved by a mixed liquid soaking treatment of HF + H 2 SO 4 . 如申請專利範圍第1項所述之研磨工具之製造方法,其中,於「去除該高分子材料層,以形成一具有呈多邊形或環形陣列之複數個研磨區域的一表面」之步驟中,係選自如:電子轟擊或有機溶劑溶解等方法其中之一者而將該高分子材料層去除。The method for manufacturing an abrasive tool according to claim 1, wherein in the step of "removing the polymer material layer to form a surface having a plurality of polishing regions having a polygonal or annular array", The polymer material layer is removed from one of methods such as electron bombardment or organic solvent dissolution. 如申請專利範圍第1項所述之研磨工具之製造方法,其中,該導電基板係選自如:金屬材質、陶瓷材質或表面具有高導電材料之高硬度塑膠材料等其中之一者。The method for manufacturing an abrasive tool according to claim 1, wherein the conductive substrate is one selected from the group consisting of a metal material, a ceramic material, or a high-hardness plastic material having a highly conductive material on the surface. 如申請專利範圍第6項所述之研磨工具之製造方法,其中,該金屬材質係選自如:不鏽鋼、鋁合金、鈦合金或合金鋼其中之一者,該陶瓷材質係選自如:氧化物陶瓷、碳化物陶瓷或氮化物陶瓷其中之一者。The method for manufacturing an abrasive tool according to claim 6, wherein the metal material is one selected from the group consisting of stainless steel, aluminum alloy, titanium alloy or alloy steel, and the ceramic material is selected from, for example, an oxide ceramic. One of carbide carbide or nitride ceramics. 一種利用如申請專利範圍第1項所述之製造方法所製得的研磨工具,其包括:一導電基板;複數個複合鍍層,係根據多邊形或環形陣列之圖形定義而設於該導電基板上,該等複合鍍層係凸出於該導電基板表面;及複數個研磨顆粒,係以至少二個以上的數量而設於該等複合鍍層上,而於該導電基板上形成一研磨面。An abrasive tool obtained by the manufacturing method of claim 1, comprising: a conductive substrate; a plurality of composite plating layers disposed on the conductive substrate according to a pattern definition of a polygon or a circular array, The composite plating layer protrudes from the surface of the conductive substrate; and a plurality of abrasive particles are disposed on the composite plating layer in an amount of at least two or more, and a polishing surface is formed on the conductive substrate. 如申請專利範圍第8項所述之研磨工具,其中,該等複合鍍層係圓柱狀結構體。The abrasive tool of claim 8, wherein the composite coating is a cylindrical structure. 如申請專利範圍第8項所述之研磨工具,其中,該研磨顆粒係選自如:鑽石、碳化物陶瓷粉末、氧化物陶瓷粉末或氮化物陶瓷粉末其中之一者,且其粒徑係介於10奈米至500微米。The abrasive tool according to claim 8, wherein the abrasive particles are selected from the group consisting of diamond, carbide ceramic powder, oxide ceramic powder or nitride ceramic powder, and the particle size is 10 nm to 500 microns.
TW101101707A 2012-01-17 2012-01-17 Abrasive tool and manufacturing method thereof TW201330984A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777778B (en) * 2021-09-17 2022-09-11 秀拉科技股份有限公司 Probe cleaning pad and probe cleaning method

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