TW201330710A - Vertical switching voltage switchable dielectric material formation and structure - Google Patents

Abstract

Embodiments disclosed herein generally relate to structures, methods and devices employing a voltage switch able dielectric material to achieve vertical and/or dual switching protection against ESD and other over voltage events.

Description

Vertically switched voltage modulation dielectric material structure and structure

The present invention relates to a structure, method and apparatus for applying a Voltage Switchable Dielectric (VSD) material for vertical switching to prevent Electrostatic Discharge (ESD) or other overvoltage conditions.

Electronic devices are often made by assembling and connecting various components (eg, integrated circuits, passive components, wafers, and the like, hereinafter collectively referred to as wafers). Many components, particularly semiconductors, are sensitive to electrical conditions where excessive voltages are applied under so-called overvoltage conditions. Sources of overvoltage conditions include Electrostatic Discharge (ESD), back electromotive force (EMF), lightning, solar wind, electromagnetic induction loads of switches, such as electric motors and electromagnets, impedance loads of switches, high current charging, Electromagnetic pulses and their similarities. Overvoltage conditions can result in high voltages in devices containing active and/or passive electronic components or circuit components, such as semiconductor integrated circuit wafers, which can cause large currents to pass through or exist in the assembly. Large currents can cause damage or negative effects on the functionality of active or passive components or circuit components.

Some wafers contain integration protection against some overvoltage conditions (eg, mild ESD conditions) that can be expected during wafer packaging or operation of various electronic devices (eg, in the case of protection against human discharge modes).

A wafer may be packaged (eg, connected to a substrate). The packaged wafer can be connected to an additional (eg, off-chip) overvoltage protection device To protect the packaged wafer from overvoltage conditions such as high voltage (eg high voltage). Since the overvoltage protection devices on and off the wafer are in electrical communication, the overvoltage protection device outside the wafer may need to protect the overvoltage protection device on the wafer. Over-wafer overvoltage protection devices are difficult to add to the fabrication of substrates using discrete components. In addition, protection on the wafer is difficult to optimize a complete system or subsystem. Examples of ESD test specifications include "IEC 61000-4-2" and "JESD22-A114E".

A printed circuit board, a printed wiring board, or a similar substrate (hereinafter also referred to simply as a PCB) can be used to assemble, support, and connect electronic components. The PCB typically includes an insulating substrate and one or more wires to provide electrical conduction for various additional components, wafers, and the like. Typically, the pattern of metal wires is plated (e.g., using a printing technique such as screen printing) to provide electrical connections on a dielectric substrate. In addition, a metal layer (eg, a layer of copper, silver, gold) is applied to the substrate and a portion of the metal layer is removed (eg, etched) to form the desired pattern. A plurality of layers of conductive patterns and/or dielectric materials (or dielectric materials) may be disposed on the PCB, and the layers may be connected using vias. Printed circuit boards contain "14" or more layers abound.

PCBs are commonly used to support or connect various electronic components such as wafers, packages, and other integrated devices. The PCB can also support and connect separate components such as resistors, capacitors, inductors and the like, as well as providing integrated devices to separate components. Conductive patterns and/or layers in the PCB, as well as other components or regions in the electronic device, sometimes provide a path to guide an overvoltage condition that may damage or adversely affect the component.

In the prior art, various structures, methods, and devices are provided to an electronic device (for example, a surface of a separated surge suppressing component is mounted on a printed circuit board) for overvoltage protection, but the prior art is in manufacturing, performance, and operating characteristics. There are usually various restrictions on cost.

The invention discloses a vertically switched voltage modulation dielectric material (VSDM) structure and structure.

First, the present invention discloses a vertically-switched voltage-modulated dielectric material structure formed in a substrate, the structure including a first conductive element for being disposed on a first horizontal layer of the substrate and a second conductive element disposed on the second horizontal layer The second horizontal layer is different from the first horizontal layer; the VSDM structure has a characteristic voltage and a vertical thickness, and the VSDM structure is disposed on a third horizontal layer of the substrate, the third horizontal layer being different from the first horizontal layer and the second horizontal layer a circuit component embedded in at least a portion of the substrate, the circuit component having an impedance; and wherein the VSDM structure is configured to be substantially conductive across a vertical thickness and conducting current between the first conductive component and the second conductive component in response to exceeding a characteristic voltage ESD pulse.

In addition, the present invention discloses an electronic device including a substrate and a vertically-switched voltage-modulated dielectric material structure. The VSDM structure is incorporated in a substrate, the substrate includes different three horizontal layers, and the VSDM structure includes: a first conductive The component is disposed on the first horizontal layer, and the second conductive component is disposed on the second horizontal layer; the VSDM structure has a characteristic voltage and a vertical thickness, the VSDM structure is disposed in the third horizontal layer; and the circuit component is embedded in at least a portion of the substrate, the circuit The element has an impedance; and wherein the VSDM structure is to be substantially conductive across a vertical thickness and conducts a current between the first conductive element and the second conductive element in response to an ESD pulse exceeding a characteristic voltage, the VSDM being configured as Electronic devices provide ESD protection.

In addition, the present invention discloses a vertically-switched voltage-modulated dielectric material structure including: a first conductive element and a second conductive element, the first conductive element and the second conductive element being disposed in a first horizontal layer; The second conductive layer is configured to connect the second conductive element to the interconnect layer; and the VSD material is configured to be disposed on the third horizontal layer, the VSD material structure has a characteristic voltage, formed in the first A vertical gap is spanned between the conductive element and the interconnect layer; wherein the VSD material is configured to vertically switch across the vertical gap in response to an ESD pulse that exceeds the characteristic voltage.

100‧‧‧ horizontal switching structure

110‧‧‧voltage source

112‧‧‧ESD pulse

120, 122‧‧‧ electrodes

130, 132‧‧‧through holes

140‧‧‧VSD material layer

142‧‧‧ arrow

150‧‧‧ gap

160‧‧‧Substrate

170‧‧‧Insulation

200‧‧‧ horizontally switched cylindrical structure

210‧‧‧voltage source

212‧‧‧ESD signal

230, 232‧‧‧ conductive plane

240‧‧‧VSD material

242‧‧ ‧ line segment

250‧‧‧ gap

300‧‧‧Printed circuit board

400‧‧‧VSDM construction

430‧‧‧Electrical structure

432‧‧‧ Conductive layer

434‧‧‧Interconnect layer

440‧‧‧VSD material layer

442‧‧‧electrode

450, 452‧‧‧ conductive structure

460, 462‧‧‧ substrate layer

470, 472‧‧‧ conductive layer

474, 476‧‧‧ conductive layer

478, 479‧‧‧ conductive layer

480‧‧‧Pre-dip filler

482‧‧‧ core

484‧‧‧Pre-dip filler

486‧‧‧ core

488‧‧‧Pre-dip filler

490‧‧‧VSDM construction

498‧‧‧VSD material layer

499‧‧‧Interconnect layer

500‧‧‧VSDM construction

510‧‧‧voltage source

512‧‧‧ESD pulse

520, 522‧‧‧ conductive layer

530, 532‧‧‧ interconnection layer

540‧‧‧VSD material

542‧‧‧ gap

600‧‧‧VSD material construction

610‧‧‧voltage source

612‧‧‧ESD pulse

620, 622‧‧‧ conductive layer

630‧‧‧Interconnect layer

640‧‧‧VSD material

642‧‧‧ gap

680, 682‧‧‧ polyimide substrate

800‧‧‧ graphics

802, 804‧‧‧ local

810, 812‧‧‧ signals

820, 822‧‧‧ voltage response curve

900‧‧‧VSD material construction

910‧‧‧Power supply

912‧‧‧ESD pulse

920, 922‧‧‧ electrodes

930‧‧‧through hole

940‧‧‧VSD material

942‧‧‧ gap

970‧‧‧Interconnect layer

980‧‧‧Prepreg

982‧‧‧ core

1000‧‧‧VSD material construction

1010‧‧‧voltage source

1012‧‧‧ESD pulse

1020, 1022‧‧‧ electrodes

1030‧‧‧through hole

1040‧‧‧VSD material

1042‧‧‧ gap

1044‧‧‧VSD material

1046‧‧‧ gap

1070‧‧‧ Conductive layer

1080‧‧‧Prepreg

1082‧‧‧ core

1100‧‧‧VSD material construction

1110‧‧‧voltage source

1112‧‧‧ESD pulse

1120, 1122‧‧‧ electrodes

1140‧‧‧VSD material

1142‧‧‧ gap

1170‧‧‧ Conductive prepreg

1182‧‧‧ core

1200, 1202‧‧‧VSD material construction

1212‧‧‧ESD signal

1220, 1224‧‧‧ electrodes

1228, 1229‧‧‧ electrodes

1230‧‧‧Prepreg layer

1240‧‧‧VSD material layer

1242‧‧‧ gap

1250‧‧‧through hole

1270‧‧‧ Conductive layer

1280‧‧‧Interconnecting layer

1290‧‧‧ESD discharge path

1296, 1297‧‧‧ embedded impedance

1298, 1299‧‧‧ Electronic components

1300‧‧‧VSD material construction

1312‧‧‧ESD pulse ESD

1340‧‧‧VSD material structure

1342‧‧‧ gap

1350‧‧‧through hole

1370, 1372‧‧‧ conductive layer

1374, 1376‧‧‧ conductive layer

1378, 1379‧‧‧ conductive layer

1400‧‧‧VSD material construction

1412‧‧‧ESD pulse ESD

1440‧‧‧VSD material structure

1442‧‧‧ gap

1470, 1472‧‧‧ conductive layer

1474‧‧‧ Conductive layer

1490‧‧‧Electrical Path

1500‧‧‧VSD material construction

1502‧‧‧VSD material construction

1510‧‧‧voltage source

1512‧‧‧ESD pulse

1520, 1522‧‧‧ electrodes

1529‧‧‧electrode

1540‧‧‧VSD material structure

1542‧‧‧ gap

1570, 1572‧‧‧ interconnection layer

1582‧‧‧ core

1592, 1593‧‧‧ components

1597‧‧‧Embedded impedance

1599‧‧‧Electronic components

1600‧‧‧VSD material construction

1601‧‧‧VSD material construction

1612‧‧‧ESD pulse

1620, 1622‧‧‧ electrodes

1624, 1626‧‧‧ electrodes

1628‧‧‧Connector

1629‧‧‧electrode

1640‧‧‧VSD material

1642‧‧‧ gap

1646‧‧‧VSD material structure

1648‧‧‧ gap

1670, 1672‧‧‧ interconnection layer

1682, 1683‧‧ core

1696‧‧‧Embedded impedance

1698‧‧‧Electronic components

1700‧‧‧bidirectional switching structure

1720, 1726‧‧‧ electrodes

1728‧‧‧electrodes

1740‧‧‧VSD material structure

1742, 1744‧‧ ‧ gap

1746‧‧‧ gap

1770‧‧‧Interconnect layer

1772‧‧‧through hole

1782‧‧‧Interconnecting layer

Step 700‧‧‧ Flow of conductive structure

Step 710‧‧‧ Apply VSD material to the substrate

Step 720‧‧‧ Apply a non-conductive layer to the top of the VSD material

Step 730‧‧‧ pattern the non-conductive layer

Step 740‧‧‧ Apply voltage to convert the VSD material to basic conduction

Step 750‧‧‧Ion deposition in the exposed area of the VSD material

Figure 1 is a horizontally switched VSDM construction with a schematic representation of a VSD material that provides ESD protection for electronic components.

Figure 2 is a horizontally-switched cylindrical structure containing a schematic representation of a VSD material that provides ESD protection for electronic components.

Figure 3 is a schematic illustration of a printed circuit board and references in related directions in various embodiments.

4A is a schematic diagram showing a VSDM configuration for implementing vertical switching using a VSD material and integrated into a substrate device, according to one embodiment.

FIG. 4B is a schematic diagram showing a VSDM configuration including a VSD material layer that can be integrated on a printed circuit board or another substrate and that implements vertical switching, in accordance with one embodiment.

Figure 5 is a schematic diagram showing a VSDM configuration using a VSD material to implement vertical switching, in accordance with one embodiment.

Figure 6 is a schematic diagram showing the VSDM construction using a VSD material to implement vertical switching, in accordance with one embodiment.

Figure 7 is a flow diagram showing a method of providing one or more conductive structures, such as interconnect layers, in a vertically switched VSDM configuration, in accordance with one embodiment.

Figure 8 is a diagram showing sample response voltage averaging for a VSDM configuration for vertical switching, in accordance with one embodiment.

Figure 9 is a schematic diagram showing the VSD material construction for vertical switching using a VSD material, according to one embodiment.

Figure 10 is a schematic diagram showing the construction of a VSD material using a VSD material for vertical switching, in accordance with one embodiment.

Figure 11 is a schematic diagram showing the construction of a VSD material using a VSD material for vertical switching, in accordance with one embodiment.

Figure 12A is a schematic diagram showing the construction of a VSD material using a VSD material for vertical switching, in accordance with one embodiment.

Figure 12B is a schematic diagram showing the construction of a VSD material using a VSD material for vertical switching, in accordance with one embodiment.

Figure 13 is a schematic diagram showing a VSDM configuration including a VSD material layer that can be integrated on a printed circuit board or another substrate and that implements vertical switching, in accordance with one embodiment.

Figure 14 is a schematic diagram showing a VSDM construction including a VSD material construction that can be integrated on a printed circuit board or another substrate and that is suitable for vertical switching, in accordance with one embodiment.

15A is a diagram showing a VSD material construction that uses a VSD material to connect one or more circuit components and implement vertical switching, in accordance with one embodiment.

Figure 15B is a diagram showing a VSD material construction that uses a VSD material to connect one or more circuit elements for vertical switching, in accordance with one embodiment.

Figure 16 is a diagram showing a VSD material construction that implements vertical switching using multiple VSD material structures in accordance with one embodiment.

Figure 17 is a diagram showing a VSD material construction for bidirectional switching of vertical switching and horizontal switching using a VSD material in accordance with one embodiment.

The embodiments of the present invention will be described in detail below with reference to the drawings and embodiments, thereby illustrating how to apply the technical means to solve the technical problems. And the realization process of achieving technical efficacy can be fully understood and implemented accordingly.

In order to protect the ESD and other overvoltage conditions of the substrate device, in accordance with various embodiments of the present invention, the electronic components and/or electronic devices may include an integrated voltage modulation dielectric material ("VSD material" or "VSDM"). ) in each substrate and / or device. A person of ordinary skill in the art is able to confirm an overvoltage condition, which includes a number of situations, and ESD can be referred to herein as an overvoltage condition.

In one embodiment, the VSD material is embedded in the device as a layer or other structure that is adapted to conduct at least a portion of the ESD signal through the device to ground or other predetermined point.

In one embodiment, a circuit component, such as a filter, is disposed between the vertically switched VSDM configuration and the electronic component to reduce or prevent portions of the high frequency voltage generated by the ESD condition from flowing into the electronic component. The circuit component can be embedded in the substrate device as a layer, structure or via, or can be attached to the substrate as a surface mount component.

According to various embodiments of the present invention, the VSD material exhibits a nonlinear resistance as a function of voltage. Although the VSD material exhibits a non-linear resistance, not all non-linear resistors are made of VSD material. For example, the resistance change of the material acts as a function of temperature, but does not significantly change the voltage function, so it will not be explained to the VSD material in the specific embodiment of the invention. In various embodiments, the VSD material exhibits a change in nonlinear resistance as a function of voltage and additional processing parameters such as current, electric field density, light or other electromagnetic radiation input, and/or other similar parameters.

The resistance change of the VSD material is presented as a function of voltage, which involves transitioning from a high resistance state to a low resistance state. This transition occurs at a specific voltage value, which can be simply referred to as "characteristic voltage", "characteristic voltage level", "switching voltage" or "switching voltage level (switching) Voltage level)". The characteristic voltage may vary with the formulation of the different VSD materials, but is relatively stable for known formulations. For a specific match The characteristic voltage of the square may be supplemented with additional parameters such as temperature and/or electromagnetic energy incident with different wavelengths including light, infrared, ultraviolet or microwave.

For a particular VSD material composition, the characteristic voltage can define a corresponding "characteristic electric field" or "feature field" to represent per unit length (eg, volts per volt "V/mil", volts per micron "V/um" )Voltage.

Unless specifically stated otherwise, the terms "structure of VSD material", "VSD material structure" or "VSDM structure" refer to any number of VSD materials having a specific physical size that perform electrical switching functions. Take the structure of the VSD material as an example, including the VSD material layer (set on the substrate or as a separate layer), the volume of the VSD material is between two or more electrodes, and the volume of the VSD material passes two or two. More than one insulating or semiconductor structure, or any other component or VSD material configuration that switches between non-conductive and conductive states when the voltage is varied sufficiently.

In a specific embodiment, the VSD material structure may be generated by combining a first VSD material having a volume and having a first characteristic voltage, wherein the volume of the first VSD material having the first characteristic voltage is between two Between the volumes of VSD materials with different characteristic voltages, the characteristic voltages of the two different volume VSD materials are different from the first characteristic voltage (the characteristic voltages of the two different volume VSD materials may or may not be equal to each other).

In a specific implementation, the VSD material structure may be generated by combining a first VSD material having a volume and having a first characteristic voltage, wherein the volume of the first VSD material having the first characteristic voltage is between (a) two Between the volumes of VSD materials having different characteristic voltages, and (b) between one or more electrodes, insulating structures and/or semiconductor structures.

An example of a VSD material structure, the VSD material layer is placed on the copper foil (but not including the copper foil), and the composite structure includes both the VSD material layer and the copper foil, and can be expressed as a "VSDM structure". A more complex VSDM construct will be explained later.

Another example of a VSD material construction is that the layout of the paint, sheet, or other VSD material is set to a horizontal layer in the PCB and is interposed in the PCB. Between two adjacent horizontal layers (ie one horizontal layer on the VSD material structure and one horizontal layer in the VSD material structure). The composite structure includes a VSD material structure and an example of combining two adjacent horizontal layers to form the VSD material (VSDM) structure.

Another example of a VSD material construction is to place a certain volume of VSD material in a horizontal layer in the PCB and in four structures (ie, VSD material structures defined by four etching channels) that are also disposed in the same horizontal layer, and Between two electrodes, the electrodes are disposed in two adjacent horizontal layers (ie, the conductive layer is above and the insulating layer is below), and the structure comprises a VSD material structure and combining four structures and two electrodes An example of forming this VSD material structure.

For a VSD material structure where two voltage point locations are known (eg, when the voltage passes through the thickness of the VSD material layer or through another gap in the VSD material structure), the characteristic voltage can be defined as a specific voltage value (eg: The characteristic voltage of this VSD material structure can be set to a specific voltage value).

Therefore, the characteristic voltage of the VSD material structure can be referred to as the voltage value per unit length in the term of the characteristic electric field, or as the characteristic voltage when the VSD material is regarded as a specific volume having certain known size characteristics. Specific voltage values (eg, VSD material structures that pass through the voltage switch may have a specific thickness). In each case, the present invention describes a characteristic electric field or characteristic voltage of a VSD material that can be referenced in various embodiments, and in each case, a corresponding characteristic electric field (volts per unit length) or characteristic voltage (in terms of volts) The appropriate conversion can be obtained taking into account the dimensional characteristics of each VSD material structure. For example, the standard characteristic electric field in a VSD material structure is generally calculated by the characteristic voltage in the VSD material structure by the characteristic electric field (volts/mil) in the VSD material structure and the gap through the voltage switch (mil) ) obtained after multiplication. A simpler understanding is that the non-standard characteristic electric field in the VSD material structure is generally obtained by calculating the characteristic voltage in the VSD material structure by integrating the characteristic electric field in the VSD material structure with the gap passing through the voltage switch. In some embodiments, for some formulated VSDs The characteristic voltage of the VSD material passing through the voltage switch gap may not be directly or linearly related to the gap size (for example, in this embodiment, the characteristic voltages) Can be measured directly or through more complex simulations or approximations).

In general, the characteristic voltage of a VSD material structure may be a function of number, cross-sectional area, volume, depth, thickness, width, and/or length of the VSD material structure, or may be relative shape, geometry, density variation, and Other functions related to variables of the VSD material structure.

The VSD material has significant non-conductivity (ie, significant insulation properties) when the voltage is below the characteristic voltage level. In this case, the behavior of the VSD material is an insulator or a dielectric. This state can be referred to as a non-conducting or insulating state, and the voltage can be referred to as a low voltage (at least relative to the above-described characteristic voltage level) at a characteristic voltage level of the VSD material. At the characteristic voltage level, the VSD material can be interpreted as having semiconductor characteristics in an embodiment of the present invention, similar to a semiconductor material as a substrate for a semiconductor fabrication process. In various embodiments, the VSD material can behave as an insulator when the voltage amplitude is below the characteristic voltage level when positive and negative voltages are applied.

When the voltage is above the characteristic voltage level, the VSD material behaves as a conductor in various embodiments of the invention, which has no resistance or relatively low resistance, which is referred to as a conductive state. The voltage above the characteristic voltage level can be referred to as a high voltage, and the VSD material can exhibit conduction or large electrical conduction when the voltage amplitude is higher than the characteristic voltage level when a positive or negative voltage is applied. The characteristic voltage depends on whether the voltage polarity may be positive or negative. When the VSD material becomes conductive and the response voltage exceeds its characteristic voltage, the VSD material can be called “switch on” when the VSD material is removed above it. After the voltage of the characteristic voltage becomes non-conductive, the VSD material can be called “switch off”. When the VSD material is switched on or off, the VSD material can be simply referred to as “switch”.

In an ideal mode, the VSD material in various embodiments of the present invention operates at an approximately infinite resistance when the voltage is lower than the characteristic voltage, and the resistance value is zero when the voltage is higher than the characteristic voltage. In general working conditions, although VSD The material is usually high, but the voltage is lower than the characteristic voltage and the finite resistance is low, and the voltage is higher than the characteristic voltage is nonzero resistance. Taking a specific VSD material as an example, the resistivity can be expected to have a large value at a low voltage to a high voltage (for example, a range of 103, 106, 109, 1012 or higher). In an ideal mode, this ratio can be approximated to be infinite or otherwise very high.

VSD materials exhibit high repeatability (i.e., reversibility) in different embodiments of the invention, which operate at both low voltage and high voltage. In some embodiments, the VSD material is actually an insulator or dielectric when the voltage is below the characteristic voltage level (ie, is actually non-conductive, exhibiting a very high or infinite resistance) when the voltage is above the characteristic voltage level. The VSD material is switched to conduct electricity, and when the voltage is lower than the characteristic voltage level, it becomes an insulator or a dielectric again. If the input voltage level is switched between the voltage below the characteristic voltage and above the characteristic voltage, the VSD material can continue to switch between the two operating states indefinitely. Although the VSD material may be subject to a certain degree of hysteresis between the two operating states, it may change the characteristic voltage level, the switching reaction time, or other operating characteristics of the VSD material to some extent.

The conversion is between a first (low potential) voltage (when the VSD material is insulated) and a second (high potential) voltage (when the VSD material is electrically conductive). In the embodiments of the present invention, it is actually foreseen and expected to be limited to a limited range of signal amplitudes and a limited range of switching times. In the ideal mode, the time-reactive input step function signal of the VSD material transitioning from the insulative state to the conductive state is higher than the characteristic voltage and may be approximately zero. That is to say, the transition of the transition may be in an instant. Similarly, in an ideal mode, the time-reactive input step function signal of the VSD material transitioning from a conductive state to a non-conducting state is lower than the characteristic voltage, which may be approximately zero. Maybe in an instant. However, under normal working conditions, the two transition times of the VSD material are not zero. In general, the transition time is short and may be as short as possible (eg, in the range of about 10-6, 10-9, 10-12 or less). VSD For the detailed structure and characteristics of the material, please refer to the disclosure in US Patent No. 7,872,251 (applicant is "Kosowsky, et al"; the announcement date is January 18, 2011; the name is "Formulations for Voltage Switchable Dielectric Material Having a Stepped Voltage Response" And Methods for Making the Same").

When in the conductive state, the VSD material of each embodiment can directly direct electrical signals to the ground of the respective circuit, substrate or electronic device or another designated contact to protect the electronic components. In various embodiments, the designated contacts are grounded, virtual grounded, shielded, safely grounded, and the like. Taking an electronic component as an example, it can be operated and/or protected by a VSD material in various embodiments of the present invention, the electronic component comprising (a) a circuit component, a circuit structure, and an electronic component disposed on a surface (eg, a resistor, a capacitor) , inductance), PCB or other circuit board, electronic device, electronic subsystem, electrical system, (b) any other electronic, electromagnetic, microelectromechanical structure (MEMS) or similar component, structure, component, system and / or device, ( c) any other unit processes or transmits data and uses electrical signals or is damaged by electrical signals, (d) by a combination of (a), (b) and/or (c) above.

In general, VSD materials can limit conduction current or other operations before high signal voltage, current strength, energy or power levels are destroyed, and their damage is irreversible. In addition, if it lasts for too long, the VSD material may be damaged by electrical signals in the operating specifications (for example, the VSD material may heat up in the conduction signal and eventually cause decomposition). For example, a VSD material may still function properly when continuously in contact with an input signal having a voltage level of 10,000 volts in less than one hundred nanoseconds, but may be damaged if the signal continues to be applied for more than a few milliseconds. VSD materials can tolerate high voltage, current, power or energy levels before damage, depending on various factors such as the specific VSD material composition and the specific characteristics of the corresponding VSD material (ie VSD material with a larger physical size) The structure is capable of guiding higher current densities), the corresponding circuit architecture, other existing ESD protection components, and the characteristics of devices containing VSD materials.

The VSD material in different embodiments is a polymer composite material and may include, for example, metals, semiconductors, ceramics, and the like. The VSD material can use various components according to different embodiments, for example, US Patent Application No. "12/953,309", entitled "Formulations for Voltage Switchable Dielectric Materials Having a Stepped Voltage Response and Methods for Making the Same", US Patent Application No. "12/832,040", entitled "Light-Emitting Diode Device For Voltage Switchable Dielectric Material Having High Aspect Ratio Particles", US Patent Application No. "12/717,102", entitled "Voltage Switchable Dielectric Material Having High Aspect Ratio Particles" And U.S. Patent No. 7,981,325, entitled "Electronic Device For Voltage Switchable Dielectric Material Having High Aspect Ratio Particles."

According to various embodiments, the VSD material may include a matrix material and one or more types of organic and/or inorganic particles dispersed in the matrix material.

The matrix material in the VSD material of different embodiments may contain organic polymers such as phenolic resin, organic germanium polymer, epoxy resin (for example: "EPON resin 828 (EPON Resin 828)", "difunctional A (difunctional) Bisphenol A) or liquid epoxy resin made of epichlorohydrin"), polyurethane, poly(meth), acrylate, polyamide, polyester (polyester), polycarbonate, polyacrylamides, polyimide, polyethylene, polypropylene, polyphenylene oxide, polysulphone ), organic ceramics (ceramer) (a lyogel/polymer composite) and polyphenylene sulfone. Other examples of the matrix material include inorganic polymers such as siloxanes and polyphosphazines.

For example, a particle of a VSD material may be included, and in various embodiments, a conductive and/or semiconductor material may be included, including: copper, aluminum, nickel, silver, gold. , titanium, stainless steel, chrome, other metal alloys, titanium (T), bismuth (Si), nickel oxide (NiO), niobium carbide (SiC), zinc oxide (ZnO), nitrogen Boron (BN), carbon (C) (including diamonds, nanotubes, and / or fullerenes), zinc sulfide (ZnS), bismuth oxide (Bi2O3), iron oxide (Fe2O3), cerium oxide (CeO2), titanium dioxide (TiO2), aluminum nitride (AlN), indium selenium compound. In some embodiments, the titanium dioxide may be undoped or doped, such as: tungsten trioxide (WO3), where the doping may include a surface coating. Such particles can be elongated from a spherical height, including: high-aspect ratios (HAR) particles, carbon nanotubes (single and/or multi-wall), fullerenes, metal nanorods or metals Nano line. Taking a material as an example, it can form a nanorod and/or a nanoparticle, and includes: boron nitride, antimony tin oxide, titanium dioxide, silver, copper (copper). ), tin (tin), gold (gold).

In various embodiments, the aspect ratio of some of the particles present in the VSD material exceeds "3:1", "10:1", "100:1", and "1000:1". Materials with high aspect ratios are sometimes referred to as "high aspect ratio" particles or "HAR" particles. Nano carbon tubes are examples of super high aspect ratio particles with an aspect ratio of "1000:1" or higher. Any material with a lower aspect ratio can be used in different embodiments to mix into VSD materials, including black carbon particles (with an aspect ratio of 10:1) and carbon fiber particles ( The aspect ratio is at 100:1).

In various embodiments, the mixed particles in the VSD material may be of various sizes, including particles having a minimum size of "500 nm" or even smaller (eg, particles having a minimum size of less than "100 nm" or "50 nm").

In various embodiments, the particles in the VSD material may comprise an organic material, and the VSD material combined with the organic material may increase the thermal expansion rate and thermal conductivity of the VSD material, better dielectric constant, improve toughness, and better compressive strength. And improve metal adhesion. Taking an organic semiconductor material as an example, it can be combined with the VSD material in each specific embodiment, including carbon formation such as conductive semiconductor carbon nanotubes and fullerenes (for example, "C60" and "C70"). The fullerene and carbon nanotubes can be modified in some embodiments to functionalize to include chemical groups or moieties of covalent bonds. Taking other organic semiconductors as an example, it can be combined with VSD materials in various embodiments, including: poly-3-hexylthiophene, polythiophene, polyacteylene, poly 3 ,4-(ethylenedioxythiophene), poly(styrenesulfonate), pentacene, 8-hydroxyquinolinolatoaluminum (III)) and NPD (N,N'-di-[(naphthalenyl)-N,N'diphenyl]-1,1'-biphenyl-4 and 4'-diamine). In addition, the organic semiconductor may be derived from monomers, oligomers and polymers of thiophene, analine, phenylene, vinylene, fluorene. ), naphthalene, pyrrole, acetylene, carbazole, pyrrolidone, cyano materials, anthracene, pentacene, rubrene (rubrene), perylene and oxadizole are obtained. These organic materials may be photoactive organic materials such as polythiophene.

Regarding the distribution of particles of a polymer in a VSD material, the distribution of particles "substantially uniformly" means that the particles are uniformly and/or randomly distributed in the material, but uneven and/or non-random particle aggregation may occur in a limited portion. . In fact, even after extensive mixing, the aggregation of such particles will usually occur in a finite volume of VSD material in a non-zero statistical probability, and this can occur at all stages of the VSD material, including: when VSD material It is used for the substrate when it is in liquid or semi-fluid prior to formation, then after placement on the substrate (eg, through coating) and/or after heat curing (whether on the substrate or otherwise). But overall, consider VSD The overall volume of the material (or portions of the VSD material that are large enough), the particles can be considered to be evenly or randomly distributed within the mixture, and when modeling the behavior of each VSD material, the particles can be modeled as Distribute evenly or randomly.

In various embodiments, the characteristic electric field in the VSD material structure disposed between the two electrodes contacting the VSD material is reduced by the reduced distance between the two electrodes. The distance between the two electrodes through the VSD material can be as large as sufficient to be considered "thickness", "effective thickness", "gap", "switching gap" or The "effective gap" voltage changes, and switches between different states of substantial and substantial insulation. If the two electrodes are placed in a substantially horizontal plane, the effective gap of the VSD material structure can be considered horizontal, provided that the two electrodes are placed in different vertical planes and/or if the voltage switch is primarily in the vertical direction, then the VSD material structure The effective gap can be considered vertical.

"Figure 1" shows a horizontally switched VSDM structure 100 containing VSD material that provides ESD protection for electronic components. In the embodiment of FIG. 1, the electrode 120 and the electrode 122 are electrically connected to the through hole 130 and the through hole 132, respectively.

In general, the term "electrode" may be or may include any electrically conductive structure, exemplified by electrodes or conductive structures, including spacers, lead, circuits, vias (eg, through holes, blind vias, buried vias), wires , a conductive film, a signal layer, a conductive layer, a conductive printed circuit board layer (eg, a conductive adhesive sheet or fill layer) or any other connector that is designed to be electrically conductive and on any substrate (eg, the substrate can include any printing) Electrical interconnect functionality is provided in a circuit board or semiconductor package.

In various embodiments, one or both of the electrodes (120, 122) may be omitted as long as electrical connections through the vias 130 and/or vias 132 can be established. Electrode 120 and/or electrode 122 may also be fabricated from copper or other suitable electrically conductive material, electrode 120 and/or electrode 122 being permeable to deposition, silk Web printing, bonding or other joining methods, whether mechanical, chemical or otherwise.

In various embodiments, electrode 120 and electrode 122 may be covered by an encapsulating material or formed as an insulating layer. In "FIG. 1", the electrode 120 and the electrode 122 are embedded in the insulating layer 170.

The vias 130 and the vias 132 are electrically conductive structures that may pass through or completely across the VSD material 140 in whole or in part. Vias 130 and/or vias 132 may be a through hole, a blind via, a buried via, a circuit, or any other conductive structure that is designed to conduct electricity and facilitate signal propagation in an electronic device. The vias 130 and/or vias 132 may be fabricated from copper or other suitable electrically conductive material, and the vias 130 and/or vias 132 may be formed by deposition, screen printing, bonding, or other bonding, whether mechanical or chemical. Or other means. The vias 130 and/or vias 132 can be solid (eg, solid metal structures), hollow (eg, conductive cylindrical structures), or can be hollow and partially or fully filled with a suitable conductive material (eg, Partially filled with a hollow cylindrical structure of conductive material).

In one embodiment, the vias 130 and/or vias 132 partially or completely fill the VSD material rather than being electrically conductive only. In this embodiment, the through holes 130 and/or the through holes 132 may be vertically or horizontally switched. In a sense, each of the through holes may be generally regarded as an insulating structure, but when the voltage exceeds the characteristic voltage of the VSD material, Becomes conductive. In this embodiment, the switching may be vertically along each of the through holes or horizontally through the respective through holes.

In the embodiment of "FIG. 1", the VSD material 140 is disposed on the substrate 160, and the substrate 160 may be a conductive substrate (for example, a layer of copper or other conductive material, a sheet or a foil), or an insulating substrate ( For example: printed circuit board bonding sheet). In one embodiment, the substrate 160 can be a substrate having a variable conductivity, such as a VSD material layer.

In the embodiment of "Fig. 1", a voltage source can be connected, and therefore, a voltage difference between the electrode 120 and the electrode 122 is generated. Voltage source 110 is illustrated as an independent voltage source as shown in Figure 1, which can also be a current source or a source of any other electrical energy. In a test assembly or in a specific Such an arrangement may be encountered in the architectural layout in which the VSD material of the particular architectural layout is intended to be activated at the moment of increasing the voltage generated by voltage source 110. The voltage source 110 is connected to the via 130 as shown in FIG. 1 to be in electrical contact with the electrode 122. In various alternative applications and embodiments, the voltage source 110 can be used for vias 132 and grounded for vias 130.

More generally, the voltage applied between electrode 120 and electrode 122 can be any voltage signal or other electrical signal, including the voltage generated by the ESD condition, such as ESD pulse 112 as depicted in FIG. In an end user device, such as a mobile phone, under normal operating conditions, the ESD pulse 112 can be expected to have a high voltage amplitude (eg, over a few hundred volts, and possibly thousands of volts), and a short duration (eg, : between a few nanoseconds and a few microseconds). The current produced by the ESD pulse 112 is expected to reach a large amplitude in excess of ten amps despite a short duration. If the structure of the embodiment of "Fig. 1" is used for ESD protection, the electrode 120 or electrode 122 can be directly or indirectly connected. To ground (or another predetermined point in the protected circuit or device), if the ESD pulse 112 reaches the other electrode, the ESD pulse 112 can be directed to ground or the predetermined point by an electrode or predetermined point connected to ground.

Assuming that the voltage applied through the voltage source (or ESD pulse 112) does not exceed the characteristic voltage of the VSD material 140, the VSD material 140 is substantially non-conductive and that no significant current is conducted between the electrode 120 and the electrode 122 through the VSD material 140 (except A portion of the leakage current is due to not affect the performance of the electronic device, and the VSD material 140 is typically designed to be minimized when the horizontal switching structure 100 is deployed.

To illustrate that voltage source 110 and ESD pulse 112 may be present in an alternative and for purposes of general description, the lines of connection between electrode 120 and electrode 122 are indicated by dashed lines, and in general, any voltage source may be applied, ESD signal or other power source, over voltage signal or voltage potential between two electrodes (120, 122). Either of the two electrodes can also be connected to a point of ground or another reference voltage level. The polarity of the voltage source 110 can be any direction between the electrode 120 and the electrode 122.

If the voltage applied through the voltage source (or ESD pulse 112) exceeds the characteristic voltage of the VSD material 140, the VSD material 140 switches to actual conduction, and significant current is conducted between the electrode 120 and the electrode 122 through the VSD material 140.

In the embodiment of "Fig. 1", the VSD material 140 can be said to be switched in the horizontal direction or the lateral direction. The horizontal or lateral direction is defined relative to the substrate 160 because current flow through the VSD material 140 occurs between the vias 130 and the vias 132, primarily in a direction parallel to the major plane of the substrate 160. In one embodiment, the substrate 160 is a layer of a printed circuit board. In this case, the horizontal switching current flows through the VSD material 140 mainly in the parallel direction of the main surface of the printed circuit board, and the main surface is provided with a large Part of the components and electronic components (or upper and lower surfaces, in this case the components are connected to the lower surface of the printed circuit board).

In various embodiments, the VSD material 140 is designed to accommodate current in both directions between the electrode 120 and the electrode 122, depending on the polarity of the voltage applied between the electrode 120 and the electrode 122. In the embodiment of "FIG. 1", the horizontal switching direction of the VSD material 140 is indicated by an arrow 142, since the substrate 160 (eg, a printed circuit board or a printed circuit board core) is actually a three-dimensional structure having a larger two. The plane of the dimension (ie, the printed circuit board surface or the defined plane of the connecting component) and the smaller height dimension, the horizontal current flowing between the electrode 120 and the electrode 122 can occur in any direction, substantially with a larger The two-dimensional plane is parallel. In other words, as shown in the embodiment of "Fig. 1", the current flows from left to right or from right to left. Considering the three-dimensional size of the substrate, such as device package or printed circuit board, the flow of current may occur in any In the direction, it is substantially parallel to the two-dimensional plane formed by the main surface of the substrate 160.

Please refer to the embodiment of "Fig. 3". In the horizontal switching mode, the current flows in any direction and is substantially parallel to the X-Y plane shown in Fig. 3. In practice, the current passing through the medium generally involves three-dimensional flow of charge. Horizontal switching does not mean that all charges must flow only in the horizontal and planar directions. Moving, conversely, the horizontal switching or switching in the horizontal direction means that the movement of the charge is mainly along a plane parallel to the two-dimensional main plane of the substrate, but it is of course possible and expected that at least a part of the current will Showing a certain amount of vertical motion. The vertical motion of the charge may be easier to detect, assuming that the simulation or analysis is performed at the micro-level. However, in general, the horizontal switching mode has at least two conductive structures, such as: the through hole 130 and the through hole 132 are disposed in a dimension perpendicular to the substrate, and current flow occurs between the two through holes, mainly It is in a direction parallel to the main two-dimensional plane of the substrate.

In the embodiment of "Fig. 1", the distance between the electrode 120 and the electrode 122 is defined as the gap of the VSD material 140, and the gap is indicated by the gap 150 of "Fig. 1". In general, the horizontal gap of the horizontally switched VSDM structure is determined by the shortest electrical path of the structure across the VSD material, and in "1", this shortest electrical path is made by the interface with the VSD material 140. The edges of the electrodes 120 and 122 are determined. If, in one embodiment, the electrode 120 and the electrode 122 do not extend toward each other, the gap 150 as illustrated in FIG. 1 is smaller than the distance between the through hole 130 and the through hole 132, and the VSD material 140 can be changed to the through hole. The horizontal gap between 130 and the through hole 132 is switched.

In one embodiment, the characteristic electric field of the VSD material 140 is defined as volts/mil. In this embodiment, the VSD material 140 disposed between the via 130 and the via 132 is defined by a gap 150 defining a particular gap size. The characteristic voltage of the structure can actually be in volts.

In one embodiment, the structure as illustrated in "FIG. 1" includes a rectangular structure (eg, the VSD material layer 140 can be constructed as a rectangular structure). In one embodiment, the structure as illustrated in "Fig. 1" includes a curved structure (for example, a structure in which the VSD material layer 140 can be formed into a cylindrical shape).

"Picture 2" shows a horizontally-switched tubular structure 200 comprising a VSD material 240 disposed on two conductive planes (eg, copper faces) for ESD protection of electronic components, said two conductive planes being electrically conductive level Face 230 and conductive plane 232. The structure 200 is substantially identical to the structure of the embodiment of "Fig. 1", but illustrates how aspects of the "Figure 1" can be implemented in a curved structure. The conductive plane 230 and the conductive plane 232 are substantially concentric conductive structures separated by a volume of a VSD material. For the sake of simplicity, the substrate and electrodes are not shown in the figures.

In one embodiment, the structure 200 illustrated in "Fig. 2" is a cross-sectional view of the structure implemented in a printed circuit board. Referring to the embodiment of "Fig. 3", the annular band (annulus) shown in "Fig. 2" is interposed between the conductive plane 230 and the conductive plane 232, and is basically set as shown in "Fig. 3". The XY planes are roughly parallel. From a three-dimensional perspective, the conductive plane 230 and the conductive plane 232 extend in a vertical direction, which are substantially parallel to the Z-axis illustrated in the embodiment of "Fig. 3" in the printed circuit board.

In the embodiment of FIG. 2, voltage source 210 or ESD signal 212 produces a voltage between conductive plane 230 and conductive plane 232. Assuming that this voltage exceeds the characteristic voltage of the VSD material 240, the VSD material will switch to conduction and the VSD material will change from non-conducting to conducting. In this case, significant current will flow between the conductive plane 230 and the conductive plane 232. For a concentric structure as illustrated in "Fig. 2", the current is primarily in the radial direction indicated by line segment 242. Please refer to the embodiment of "Fig. 3". The horizontal switching structure shown in "Fig. 2" means that current will flow between the conductive plane 230 and the conductive plane 232, mainly along the meaning of "Fig. 3". The XY plane is approximately parallel to the plane. Similarly, in the embodiment of "Fig. 1", horizontal switching does not mean that the current will be strictly limited to flow along a plane substantially parallel to the main two-dimensional plane of the substrate, but because of the through-hole, VSD material structure and microscopic Three-dimensional objects of micro-level effects can be expected to have a certain amount of current that will occur in the vertical dimension. However, horizontal switching means that the current does occur in a plane parallel to the main two-dimensional plane of the substrate. For example, the use of current in the horizontal direction by the VSD material 240 can achieve useful electrical functions.

In one embodiment, the characteristic electric field definition of the VSD material 240 For volts/mils, in this embodiment, the characteristic voltage of the VSD material 240 structure disposed between the conductive plane 230 and the conductive plane 232 can be substantially in volts by defining a gap 250 of a particular gap size. In the embodiment of "Fig. 2", the curved structure of the structure 200 is more complicated than the rectangular structure of the structure 100 of the "Fig. 1" embodiment, and therefore it is more difficult for the structure 200 to determine the actual characteristic voltage. However, in one embodiment, the characteristic voltage of the VSD material 240 is associated with the size of the gap 250 and may be somewhat a value in volts.

"Fig. 3" is a schematic diagram of a reference of a printed circuit board and related directions in various embodiments, and the printed circuit board 300 illustrated in "Fig. 3" has a main horizontal plane defined on the X-axis and the Y-axis, and a Define the vertical dimension of the Z axis. This reference coordinate system is defined as the actual positioning of the printed circuit board in physical space so that the printed circuit board rotates in space without changing the horizontal plane and vertical dimensions. This reference system will be described in more detail in relation to a printed circuit board, such as the printed circuit board 300 shown in Figure 3, but is also applicable to any other substrate similar.

In general, a "substrate device" can be protected by a VSDM configuration for ESD or other overvoltage conditions, or a VSDM configuration can be incorporated therein, and the substrate device refers to any printed circuit board, single layer or multilayer printing. a circuit board, a package of a semiconductor device, a light emitting diode substrate, an integrated circuit (IC) substrate, an interposer or a connection of two or more electronic components, devices or substrates (this connection may be vertical) And/or horizontal) of other platforms, any other stacked package specifications (eg, board, wafer level package, package-in-package, system-in-package or stacked combination of at least two packages or substrates) Or any other substrate to which a VSD material construction can be attached or in which a VSD material construction is incorporated. For the sake of simplicity, the "substrate device" may sometimes be referred to as a "substrate."

Using this reference coordinate system, the horizontal switching direction is defined by the line segment 142 in the "Fig. 2" embodiment and the line segment 242 in the "Fig. 3" embodiment, which will be substantially parallel to the main two-dimensional plane of the printed circuit board 300. Plane, The main two-dimensional plane of the printed circuit board 300 is defined in the X-Y plane shown in "Fig. 3".

"FIG. 4A" is a VSDM configuration 400 showing vertical switching using a VSD material according to an embodiment, and which can be integrated in a substrate device such as a printed circuit board, a flexible circuit or a semiconductor wafer package. . The VSDM construction consists of multiple layers, at least one of which is a VSD material layer, sometimes referred to as a VSDM construction or simply a VSDM construction. The configuration 400 can show the layers in a printed circuit board, a semiconductor package, or another substrate device in a cross-sectional view. In general, a VSDM configuration suitable for implementing vertical switching may also be referred to as "vertical switching VSDM formation."

VSDM constructions having a number of vertical switchings are disclosed in U.S. Patent Application Serial No. 12/417,589, the disclosure of which is incorporated herein by reference in its entirety in its entirety in

The structure 400 shown in FIG. 4A includes two substrate layers 460 and 462, which are integrated in a printed circuit board, a VSD material layer 440, a conductive structure 430, and a conductive layer 432.

The electrically conductive structure 430 can be a through hole (eg, a through hole for laser drilling), a shim, a circuit, or any other structure that is designed to be electrically conductive and facilitate electrical signal propagation.

The conductive layer 432 can be used as a signal layer or a ground layer and integrated in a printed circuit board. In one embodiment, the conductive layer 432 is a conductive structure pre-configured with a VSD material 440 (eg, a coated and cured VSD material 440). Copper foil).

The VSDM construction 400 illustrated in Figure 4A is disposed along the vertical dimension of the printed circuit board as indicated by the Z-axis. Referring to the embodiment of "Fig. 3", the Z axis shown in "Fig. 4A" is the same as the Z axis shown in Fig. 3.

Horizontal switching in the "1st" and "2nd" embodiments The direction is analogous, and the vertical switching mode has its current flowing in a plane parallel to the vertical direction of the substrate.

Referring to the embodiment of FIG. 3, the vertical switching structure is shown in the embodiment of FIG. 4A, which assumes that the VSD material 400 is switched to conduct electricity because the voltage exceeds its characteristic voltage, and the current will be in the conductive structure 430 and The flow between the conductive layers 432 is mainly in a direction parallel to the Z-axis indicated by "Fig. 3". Similarly, as with the horizontal switching described in the "Fig. 1" and "Fig. 2" embodiments, vertical switching does not mean that the current will be strictly limited to flow in a direction substantially parallel to the Z axis (or vertical axis) of the substrate. . Conversely, due to the three-dimensional object of the conductor, the three-dimensional structure of the printed circuit board layout, the three-dimensional physical characteristics and the shape of the VSD material structure, the microscopic level effect of the VSD material itself (eg, the current is dispersed within the particles of the VSD material and/or Or between propagation, a certain amount of current occurring in the horizontal dimension, at least in the VSD material, can be expected. However, the vertical switching mode will primarily occur in a direction substantially parallel to the Z-axis (or vertical axis) of the printed circuit board or other substrate to achieve a useful electrical function through the vertical direction of the VSD material 440.

In one embodiment, VSDM construction 400 further includes a layered interconnect 434 that is configured to contact conductive structure 430 and VSD material 440. The interconnect layer 434 is electrically conductive and may be added to various embodiments to increase the cross-sectional conductive region of the boundary between the conductive structure and the VSD material structure. For example, the conductive structure 430 illustrated in FIG. 4A. And the boundary between the VSD material 440. In addition, the interconnect layer can enhance the ability of each conductive structure to carry more current at such a boundary, especially if the boundary has small physical properties, which may result in concentration of currents or concentration of electrical. Fields). This may be more desirable, for example, if the conductive structure 430 has a small cross-sectional area that contacts the location of the VSD material 440.

In general, the interconnect layer is disposed between the conductive element and the VSD material structure. For example, the interconnect layer 434 illustrated in FIG. 4A can provide Enhance the current between the conductive structure and the VSD material, improve the mechanical properties of the interface between the conductive structure and the VSD material (eg, increase adhesion or fit, better temperature coefficient, etc.), improve the conductive structure and VSD material Electrical connections between, and other similar advantages.

In various embodiments, the arrangement of the interconnect layer 434 can completely or partially separate the conductive structure 430 from the VSD material 440, or can be disposed at the boundary of the other conductive structure 430 to provide between the conductive structure 430 and the VSD material 440. Additional electrical path (eg vertical).

In one embodiment, interconnect layer 434 physically separates conductive structure 430 from VSD material 440. To fabricate this embodiment, an interconnect layer 434 can be formed on top of the VSD material 440, and a conductive structure 430 can be formed over the interconnect layer 434 to prevent complete penetration of the interconnect layer 434 via the conductive structure 430.

In one embodiment, interconnect layer 434 physically contacts VSD material 440, and at the interface of VSD material 440, interconnect layer 434 encapsulates a portion of conductive structure 430. To fabricate this embodiment, an interconnect layer 434 can be formed on top of the VSD material 440, and a conductive structure 430 can be formed over the interconnect layer 434 and then penetrate the interconnect layer 434 to create a structure between the conductive structure 430 and the VSD material 440. Direct physical contact (eg, laser drilling a hole through interconnect layer 434 until VSD material 440, then filling the hole with a conductive material to create a conductive via).

"FIG. 4B" shows a VSDM construction 490 comprising a VSD material layer 498 that can be integrated on a printed circuit board or another substrate and that implements vertical switching, according to one embodiment. In one embodiment, the VSDM structure 490 illustrated in FIG. 4B includes the structural components of the structure 430 illustrated in FIG. 4A and some additional features and layers.

The VSDM structure 490 illustrated in FIG. 4B includes a plurality of substrate layers, typically insulating (or dielectric), designated as prepreg filler 480, core 482, prepreg filler 484, core 486, and prepreg filler 488.

The VSDM structure 490 shown in "Fig. 4B" also contains a These conductive signal layers are denoted as L1~L6 conductive layers and are numbered as conductive layers 470, 472, 474, 476, 478 and 479. These signal layers can be used to conduct electrical signals in printed circuit boards, or components and circuit components connected to printed circuit boards, or as ground or other voltage reference points.

The VSDM structure 490 illustrated in FIG. 4B also includes two conductive structures, designated as conductive structures 450 and 452. Either or both of the conductive structures 450 and 452 can be through holes, pads, circuits, or any other structure that is designed to be electrically conductive and facilitate electrical signal propagation. The VSDM construction 490 illustrated in Figure 4B is placed along the vertical dimension of the printed circuit board, as indicated by the Z-axis. Referring to the embodiment of "Fig. 3", the Z axis shown in "Fig. 4A" is the same as the Z axis shown in Fig. 3.

In the embodiment of FIG. 4B, interconnect layer 499 is disposed at an interface between conductive structure 452 and VSD material 498. In various embodiments, interconnect layer 499 is similar to interconnect layer 434 of the "FIG. 4A" embodiment. Interconnect layer 499 can provide various advantages to the interface between conductive structure 452 and VSD material 498, including those mentioned in the "FIG. 4A" embodiment.

If the VSD material layer 498 contacts the voltage between the conductive structure 452 and the conductive layer 474, which exceeds the characteristic voltage of the VSD material layer 498, the VSD material included in the VSD material layer 498 will be switched to be conductive and will become conductive. In this case, the current mainly flows in the vertical direction between the conductive structure 452 and the conductive layer 474. Assuming this condition occurs, the VSD material layer 498 has a vertical switch.

In one embodiment, similar to the "Fig. 1" and "Fig. 2" embodiments, when the characteristic voltage of the VSD material layer 498 is measured in volts, it is related to the gap size of the VSD material. As in the embodiment of "FIG. 4B", the gap size is approximately equal to the distance between the conductive structure 452 and the conductive layer 474, and is also equal to the thickness of the VSD material 498. Although the exact formula for calculating the characteristic voltage of a VSD material by the gap size is affected by some variables (for example, the exact VSD material recipe, the VSD material structure, or the full volume of the layer, Through the actual shape of the VSD material structure that is switched, the impedance of any circuit component connected to the VSD material, etc.). However, in the VSD material formulations used in various embodiments, the gap of the smaller VSD material usually results in a smaller characteristic voltage, and the smaller characteristic voltage may be the best in some applications (eg, the application will switch in the VSD material). To a lower voltage).

In general design considerations, reducing the gap size of the VSD material must balance the risk that the VSD material structure becomes too small to lose its ideal operating characteristics (eg, a too thin VSD material structure is in rapid and continuous contact with similar trigger voltages). There may be a decrease in repeatability consistency, a potential loss of heat dissipation, or a higher risk of being short-circuited or damaged.

One advantage of vertical switching over horizontal switching is that in some manufacturing environments it is easier to control the gap size of the vertical switching configuration than the horizontal switching configuration. For example, using the current technology while considering the manufacturing cost to produce a horizontal VSD material gap, such as the gap 150 of the "Fig. 1" embodiment, and the gap 250 of the "Fig. 2" embodiment, the tolerances that may be tolerated may not be Small enough, or it may be difficult to maintain the accuracy of a printed circuit board produced through a large commercial production line. Therefore, horizontally switched VSDMs are constructed on different printed circuit boards, or even on the same printed circuit board, and do not wish to exhibit high statistical variations in their respective characteristic voltages and/or operational robustness, and such changes may be more difficult to use. The production line is manufactured using standard manufacturing techniques and processes.

Conversely, in some embodiments, the vertical tolerance for the VSD material construction, such as the VSD material construction 400 illustrated in Figure 4A, may be easier to maintain accurate. For example, if the VSD material is placed in a conductive layer to ensure consistent and accurate VSD material thickness, the gap 442 will have a relatively consistent and accurate gap size. In practice, this can be achieved using advanced coating techniques coupled with appropriate inspection, metering and monitoring processes.

Another advantage of vertical switching versus horizontal switching is that the VSD material structure is used to perform vertical switching to create a large cross-sectional area for current flow when the VSD material becomes conductive. Larger cross-sectional area can conduct More current, resulting in better performance characteristics and durability of the VSD material structure. For example, in the embodiment of "FIG. 1", the cross-sectional switching area of the VSD material 140 is proportional to the thickness measured in the vertical direction of the VSD material layer, which is usually small and tends to produce a small cross-sectional area. . In contrast, in the "Fig. 9" embodiment, the cross-sectional switching area of the VSD material 940 is proportional to the surface area of the electrode 920 measured in the X-Y plane, which tends to result in a larger cross-sectional area.

To process the VSD material layer on the substrate, in the embodiment of "Fig. 1", in the embodiment of the VSD material 140 or "4A" on the substrate 160, the VSD material 440 on the conductive layer 432, the VSD material can be It is coated and cured on the substrate. Taking the embodiment of FIG. 4A as an example, the VSD material layer 440 on the conductive layer 432 is processed, and the VSD material can be coated and cured on the material of the conductive sheet (eg, copper). Then, the obtained cured VSDM structure can be used as a compound layer in a printed circuit board, and includes a material of a conductive sheet to be the conductive layer 432 and a VSD material to be the VSD material layer 440. Other features shown in "Fig. 4A" can be formed by various manufacturing steps during the manufacturing process.

Unless otherwise specifically stated, the terms "VSD material construction", "VSDM construction", "VSD material construction", "VSDM construction", "VSD material construction", "VSD material stacking" or "VSDM stacking" refer to Any combination, arrangement or other structure comprising (a) at least one VSD material structure and (b) one or more of the following: (i) an insulating element (eg, a prepreg or other insulating layer or structure) a printed circuit board, an insulating layer or structure in a semiconductor package, etc.), (ii) an electrode (eg, a conductive via in a printed circuit board or a conductive connector in a semiconductor package), (iii) a semiconductor component (eg: Structures made of semiconductor materials) and/or (iv) different VSD material structures. Taking the VSD material structure as an example, the simpler configuration is that the combination of the VSDM structure (such as the VSD material layer) is set on the copper foil and the copper foil itself.

Other examples of more complex VSD configurations are vertically switched VSDM configurations, which are described and/or claimed in various embodiments of the patent. The VSDM structure 490 of the embodiment of the "FIG. 4A" embodiment, the VSDM structure 490 of the "FIG. 4B" embodiment, the VSDM structure 500 of the "fifth figure" embodiment, and the VSD material structure 600 of the "FIG. 6" embodiment. The VSD material structure 900 of the "Fig. 9" embodiment, the VSD material structure 1000 of the "10th figure" embodiment, the VSD material structure 1100 of the "11th figure" embodiment, and the VSD material structure of the "12A figure" embodiment. 1200, VSD material structure 1300 of the "Fig. 13" embodiment, VSD material structure 1400 of the "Fig. 14" embodiment, VSD material structure 1500 of the "15A figure" embodiment, and VSD of the "16th figure" embodiment The material structure 1600 and the bidirectional switching structure 1700 of the "17th embodiment" embodiment.

Coating and curing the VSD material structure on the substrate, such as the VSD material layer, can be achieved through a series of steps. For example, please refer to the embodiment of FIG. 4A. The VSD material layer, such as the VSD material 440, will eventually become the conductive layer 432 on the substrate. The following steps can be used: (1) Dispense the VSD material ( Dispensing) On the substrate, the VSD material is in a liquid or semi-liquid state (for example, due to particles and other materials dispersed in the VSD material, the viscosity of the VSD material tends to be higher than that of a liquid such as pure water, so the flow is slow); (2) Extend the VSD material in a layer on the substrate while maintaining the thickness of the VSD material within the desired range and tolerances across the surface of the substrate; (3) monitor, inspect, and/or test the VSD material applied to the large surface of the substrate. Thickness to ensure that the thickness of the VSD material is maintained within the desired range and tolerance; (4) Curing the VSD material and exposing it to a hot environment (eg, processing the VSD material coated on the substrate through the oven, oven) The temperature can be controlled and/or varied within the desired range; (5) removing the solvent or other material used in the earlier manufacturing process and designed to be removed at this point for subsequent processing; and (6) Generated by monitoring, inspection and/or testing VSD material construction, including a cured VSD material layer on the substrate to ensure thickness, consistency, defect density, switching voltage, and physicality of the cured VSD material layer Expected characteristics and tolerances in terms of elasticity, adhesion, flexibility or other physical properties, thermal durability or other thermal properties, and/or other relevant parameters.

In addition to coating, other methods can be used to deploy the VSD material structure on a substrate, such as a VSD material layer, such as: deposition, screen printing, die seal, blade coating, press bonding, mechanical adhesion. (eg, pre-cured VSD material on one layer and then attached to the substrate), or through any other means of bonding, whether mechanical, chemical or otherwise. Regardless of the method used, the resulting VSD material construction will include a VSD material layer placed on top of the substrate (whether conductive or not), and the VSD material will be in a cured state and capable of performing a voltage switching function.

In one embodiment, the method of fabricating a VSD material construction includes a VSD material layer pre-cured on the substrate, and then integrating the VSD material structure into a printed circuit board, the VSD material being physically fabricated in the printed circuit board. It can be coated on one layer of a printed circuit board. Taking "FIG. 4B" as an example, the L3 conductive layer 474 can be attached to the prepreg filler 484 during the fabrication of the VSDM structure 490, and then the VSD material layer 498 can be disposed and cured on the L3 conductive layer 474, and then the interconnect layer 434. A top end of the VSD material 498 can be formed (e.g., screen printed), after which the core 482 is attached to the VSD material layer 498, which is then formed in the core 482 or has been produced prior to attachment of the core 482.

"Figure 5" shows a VSDM fabric 500 that implements vertical switching using a VSD material, in accordance with one embodiment. The VSDM construction of Figure 5 can be integrated into a substrate device such as a printed circuit board, a flexible circuit, or a semiconductor wafer package.

The VSDM structure 500 of FIG. 5 includes a set of conductive layers 520 and 522, which may be conductive signal layers or other electrodes in a printed circuit board. The VSDM structure 500 of FIG. 5 further includes a VSD material layer 540. .

The interconnect layer 530 is disposed between the conductive layer 520 and the VSD material 540, and the interconnect layer 532 is disposed between the VSD material 540 and the conductive layer 522. In an alternate embodiment, either or both of interconnect layers 530 and 532 Not present, in this case, the VSD material 540 is in direct physical contact with one or two conductive layers.

In one embodiment, the interconnect layer is any conductive structure that can be part of the structure or connect a VSDM configuration with vertical switching to transfer voltage and/or current along the electrical path, the electrical path including one or more VSDM structure. In some embodiments, the interconnect layers are disposed in a horizontal direction (eg, within one horizontal layer) to provide electrical conduction. In some embodiments, the interconnect layers are disposed in a vertical direction (eg, over one or more horizontal layers, and/or between two or more horizontal layers) to provide electrical conduction. In some embodiments, the interconnect layers are simultaneously disposed in horizontal and vertical directions, and/or obliquely.

In various implementations, the interconnect layer, such as the interconnect layer 530 or 532 of FIG. 5, can be applied using any suitable process, including through screen printing, stencil printing, deposition, adhesion, use of heat and/or pressure. Coupling, through any other physical connection (eg, gluing or bonding), or by pre-establishing an interconnect layer into the substrate (eg, setting the interconnect layer as a layer, structure, conductive core, or prepreg in the printed circuit board, Or as a layer in a semiconductor package, conductive structure). In one embodiment, a substrate to which a VSD material layer is attached (eg, a substrate using copper foil as a VSD material layer) can serve as an interconnect layer to provide horizontal conduction within a printed circuit board or other substrate. In general, the interconnect layer is suitable for use with embodiments of each vertically switched VSDM configuration that can be produced by any mechanical, chemical or other suitable deposition method.

In various embodiments, the interconnect layer can have a range of impedances. For example, in some embodiments, it is preferred to have negligible impedance (eg, a highly conductive film that has very low resistance and does not introduce any significant voltage drop). In another example, the interconnect layer can be intentionally constructed to have a higher impedance and introduce a specific voltage drop when current flows through it (eg, the interconnect layer can be designed as an embedded circuit component, or can include An embedded circuit component). Taking a resistive interconnect layer as an example, its resistance is generally not considered negligible and will be a conductive film with a resistance of between 25 and 1000 ohms. In one embodiment, the interconnect layer may constitute "figure 15A". Element 1592 in the embodiment may be modeled to function as element 1592 in the "Phase 15A" embodiment.

In various embodiments, the interconnect layer is made of a carbon filled epoxy or a nickel-chromium alloy deposited on copper (eg, a thermal thin film resistor layer deposited on the copper foil) to be non-negligible. Resistivity.

In various embodiments, the interconnect layer can be fabricated from a material or combination of materials having a high dielectric constant, which will result in a higher capacitance of the interconnect layer.

In various embodiments, the interconnect layer can be made of any material or combination of materials that can conduct current and be suitable for substrate applications.

In the embodiment of the present invention, a material for forming an interconnect layer is exemplified, for example, the interconnect layer 530 or 532 is a Z-axis conductive tape manufactured by "3M Company", and the market name is "3M ^TM Z". -Axis Electrically Conductive Tape 9703”. When set to a substantially horizontal layer, the Z-axis conductive strip exhibits anisotropic conductivity along the Z-axis and, when conducting current along the Z-axis, is substantially conductive but horizontally insulating.

Other examples of materials that can be used as interconnect layers in embodiments of the present invention, such as interconnect layer 530 or 520 are silver paste, copper paste, and other adhered metal types, silver coated copper layers, carbon layers, and iron. Material or compound including ferrite, conductive epoxy or polymer, or other material layer, structure or connector capable of conducting current. In general, unless the interconnect layer has anisotropic conductivity, the interconnect layer can be used in the vertically switched VSDM configuration of the various embodiments to conduct current in horizontal, vertical, and/or oblique directions, depending on various embodiments. The specific structure.

In the embodiment of "figure 5", a voltage source may be connected between the conductive layers 520 and 522. The voltage source 510 of "Fig. 5" serves as an independent voltage source, which may also be a current source or any other. The source of electrical energy. Such an arrangement can be encountered in a test step or a particular architectural layout in which a VSD material is integrated to increase the voltage through voltage source 510 to make the VSD material conductive.

In a more general sense, applied to conductive layers 520 and 522 The voltage can be any voltage signal or other electrical signal, including the voltage generated by the ESD discharge, such as the ESD pulse 512 illustrated in the "Fig. 5" embodiment. Under normal operating conditions, it is typically encountered by end user devices, such as mobile phones, ESD pulses 512 can be expected to have a high voltage level (eg, over a few hundred volts, or even thousands of volts) and short duration Time (for example: between nanoseconds and microseconds). Although the duration is short, the current produced by the ESD pulse 512 can be expected to exceed a large amplitude of ten amps. If the structure of the "Fig. 5" embodiment is used for ESD protection, conductive layers 520 and 522 can be connected to a ground plane (or another predetermined point in the protected circuit or device) and ESD pulse 512 can be directed To ground or the predetermined point.

If the voltage applied through voltage source 510 (or by ESD pulse 512) does not exceed the characteristic voltage of VSD material 540, VSD material 540 is substantially non-conductive and has no significant current flow through interconnect layers 530 and 532, as well as through VSD material 540. (In addition to a portion of the leakage current, the reason is that the VSD material 540 is designed to be minimized during conduction of the structure 500) to conduct between the conductive layers 520 and 522 in order not to affect the performance of the electronic device.

To illustrate that voltage source 510 and ESD pulse 512 may be present in an alternative, and for general description purposes, the connecting lines between each of conductive layers 520 and 522 are indicated by dashed lines. In general, a voltage source, an ESD signal, or other electrical source, an overvoltage signal, or a voltage potential can be applied between conductive layers 520 and 522. These two conductive layers can also be connected to ground or to a point of another reference voltage level.

If the voltage applied by the voltage source 510 (or replaced by the ESD pulse 512) exceeds the characteristic voltage of the VSD material 540, the VSD material 540 is substantially switched to be conductive, and there is a small amount of current passing through the VSD material 540 at the conductive layers 520 and 522. Conducted between.

If for a given VSD material composition, the characteristic electric field of the VSD material is defined in volts per volt (V/mil) (or otherwise defined in volts per unit length), the characteristics of a VSD material with a given thickness The voltage can be determined as a specific voltage value, for example, assuming a VSD material layer The thickness of 540 is represented as a gap 542 of T in the embodiment of FIG. 5, and the characteristic electric field of the VSD material layer 540 is expressed as ECH per mil, and the corresponding characteristic voltage value is expressed as VCH in volts, and can be Expressed as the following formula: VCH (V) = ECH (V / mil) * T (mil) Formula One

Assuming that the value of the characteristic electric field ECH is a constant or a constant approximate to the thickness T, the formula of Equation 1 holds.

In general, the characteristic electric field ECH may not be constant over the gap of the corresponding VSD material and will vary depending on the thickness of the VSD material. To a certain extent, the characteristic electric field ECH is not constant over the gap of the VSD material, and the characteristic voltage VCH can be obtained by the product of the characteristic electric field ECH and the corresponding thickness T.

As can be seen from Equation 1, by reducing the thickness of the VSD material layer 540, the characteristic voltage of the VSD material structure 540 is also relatively reduced. An example value can be used for the thickness of the VSD material 540 in industrial applications of mobile phones, including lower than For a second mil value, to further reduce the characteristic voltage, the thickness of the VSD material layer 540 can be reduced to less than one mil.

Assuming that the impedance of interconnect layers 530 and 532 and conductive layers 520 and 522 are negligible, these conductive layers and interconnect layers do not have a significant voltage drop, and thus the voltage generated by voltage source 510 or ESD pulse 512 reaches VSD material 540. After the characteristic voltage, the VSD material 540 is switched to be conductive and conductive.

"Figure 6" shows a VSDM construction 600 that implements vertical switching using a VSD material in accordance with one embodiment. The VSDM structure of "Fig. 6" can be integrated in a substrate device such as a printed circuit board, a flexible circuit or a semiconductor wafer package.

The VSDM structure 600 of FIG. 6 includes a set of conductive layers 620 and 622, which may be conductive signal layers or other electrodes in a printed circuit board. The VSDM structure 600 of FIG. 6 further includes a VSD material structure 640. it It is a layer that is set to be substantially the same as the thickness T of the gap 642.

The interconnect layer 630 is disposed between the conductive layer 620 and the VSD material structure 540, and the conductive layer 622 physically and electrically contacts the VSD material 640.

According to various embodiments, in addition to conventional hard boards, such as rigid printed circuit boards and rigid semiconductor packages, vertically switched VSDM configurations can also be implemented in flexible circuits, flexible substrates, flexible semiconductor packages, and other flexible devices. To achieve this goal, the VSD material construction used is adjusted to exhibit enhanced elastic properties. For example, the general rule is to reduce the amount of metal particles in the VSD material (eg, by reducing or eliminating dispersion in the VSD material). Metal particles) reduce the brittleness of the cured VSD material and thus make the VSD material more suitable for soft applications.

The vertically-switched VSD material structure can be further adapted to soft applications by adding one or more attributes with appropriate mechanical and/or environmental endurance properties. The VSD material construction 600 illustrated in the embodiment of "FIG. 6" is For example, two additional layers are added to polyimide substrates 680 and 682.

Polyimide materials are generally lightweight and soft, have high mechanical ductility and tensile strength, and tend to better resist high temperatures and chemical reactions. Polyimide materials are used in the electronics industry to make flexible cables, as insulating or passivation layers in processes in digital semiconductor and MEMS wafers, as insulating films, as high temperature adhesives, for medical catheter applications And for other applications that require flexibility, low weight, and improved environmental toughness.

Another VSD material construction application uses a heat resistant material, such as the polyimide substrate 680 and 682 included in the VSD material structure 600 of the "Fig. 6" embodiment for high thermal energy applications, such as LED panels or electronic applications. The area of operation has a higher ambient temperature (eg, a hot climate) or limited ventilation in the device (eg, closed or embedded electronics or systems with limited or no heat dissipation).

"Figure 6" shows the operation of the VSDM construct 600 and The electrical behavior is roughly similar to the VSDM construction 500 illustrated in Figure 5. In particular, when a voltage is applied between the conductive layers 620 and 622, as long as the respective impedances are negligible, no significant voltage drop occurs in the conductive layers 620 and 622 or in the interconnect layer 630, and thus, when the voltage is passed. When the voltage applied by the source 610 (or by the ESD pulse 612) exceeds the characteristic voltage of the VSD material 640, the VSD material 640 is switched to be conductive and conductive, and the characteristic voltage of the VSD material 640 is proportional to the thickness T of the VSD material 640.

"FIG. 7" is a method of forming a vertical switching VSDM structure according to one embodiment, including an interconnect layer or other electrodes. As shown in FIG. 7, method 700 includes the steps that can be used to generate one or more conductive structures, such as one or more interconnect layers or other electrodes present in a vertically switched VSDM configuration. Additional optional steps can be used to further refine the resulting VSDM construction.

A method of producing a device, such as an LED device, is disclosed in U.S. Patent Publication No. 7,825,491, entitled "Light-emitting device using voltage switchable dielectric material", which is incorporated herein by reference. .

In the embodiment of "Fig. 7", in step 710, a VSD material is disposed on a substrate or surface (e.g., copper foil). In step 720, a non-conductive material layer is disposed on the VSD material (eg, photoresist layer).

At step 730, the layer of non-conductive material is patterned into a particular pattern that will define one or more conductive structures, such as interconnect layers or other electrodes. For example, patterning at step 730 may define the location and shape of the interconnect layer in the "FIG. 4A" embodiment, which is disposed at the top of the VSD material 440. In one embodiment, the non-conductive layer is a layer of photoresist material, and the laser is passed through the reticle by exposing the photoresist, followed by etching to produce a pattern. Both positive or negative photoresist treatments known in the art can be used. The result of step 730 is that one or more regions of the VSD material will be exposed through one or more portions of the non-conductive layer corresponding pattern.

At step 740, an electrical voltage exceeding a characteristic voltage of the VSD material is applied. Pressure, therefore, the VSD material is converted to conductive, this voltage can be directly applied to either the VSD material or a conductive substrate (such as copper foil) placed on the VSD material. The applied voltage can be a constant or variable voltage (eg, a pulse).

Although the VSD material is electrically conductive, an ion deposition process occurs in step 750 for forming a conductive structure in the exposed regions of the VSD material pattern (eg, an interconnect layer, such as interconnect layer 434 of the "FIG. 4A" embodiment). . It is also possible to deposit an ionic medium into at least some of the exposed regions defined by the VSD material exposed pattern by various known deposition processes. In one embodiment, the plating process is performed with the exposed areas of the VSD material submerged in the electrolytic solution.

In a preliminary embodiment, ion deposition is performed using a powder coating process in which power particles are charged and applied to an exposed region of a substantially conductive VSD material. The application of this powder can be achieved by depositing powder on the exposed areas or immersing the substrate in a powder bath.

Still further, another embodiment may use an electrospray process in which the ionic medium may be in the form of charged ions, the solution may be applied to the substrate and the VSD material to be electrically conductive, and the application of the spray may comprise ink or paint.

In various embodiments, other deposition techniques may also be used to perform ion deposition on an exposed region of a substantially conductive VSD material, such as vacuum evaporation (eg, Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD), for example, in physical vapor deposition, metal ions are introduced into a chamber to combine with gas ions. The exposed areas of the VSD material can make oppositely charged electrical conductivity to attract and adhere to the chamber ions. In CVD, an ion-based film can be applied to a VSD material on the surface of a substrate.

At step 760, the non-conductive material can be arbitrarily removed from the substrate to leave the formed conductive structure (eg, using one interconnect layer or another electrode in a vertically switched VSDM configuration). In one embodiment, when the photoresist material is made of a non-conductive material, an alkaline solution (eg, KOH) or Water is applied to the substrate to remove the photoresist material.

In one embodiment, after the photoresist layer is removed, a polishing step can be applied to the formed VSDM structure. In one embodiment, chemical mechanical polishing is used to polish the formed VSDM constructed substrate.

The "8th figure" is an average of the sample response voltages of the VSDM structure for vertical switching, such as the VSDM structure 500 shown in "Fig. 5" or the VSDM structure 600 shown in "Fig. 6", according to an embodiment. Graphic 800. The voltage response curve 820 shown in Fig. 8 is obtained by measuring the voltage of the VSD material layer having a vertical gap of two mils and repeatedly applying an input voltage in the form of a transmission line pulse (TLP). For example, in the "figure 5" embodiment, such measurements can be achieved by measuring conductive layer 520 and opposing conductive layer 522 having a voltage source 510 to apply the TLP.

In one embodiment, the measurement of the response voltage of the VSDM configuration can be processed using a TLP generator, and the oscilloscope displays as follows: (1) The TLP generator transmits pulses along the coaxial cable transmission line toward the VSDM constructed electrode, among a gap corresponding to the characteristic voltage; (2) the oscilloscope intercepts the TLP toward the target electrode of the VSDM structure; (3) the TLP reaches the target electrode of the VSDM structure, and some of the energy from the TLP is reflected back as an echo; (4) the oscilloscope intercepts Reflecting the echo; and (5) a computer processing the TLP and the reflected signal to evaluate the characteristic voltage of the VSDM structure across the gap.

Response curve 820 shows portion 802 of the graph on a longer time scale, and response curve 822 is displayed at portion 804 of the graph on a shorter time scale of sixteen nanoseconds, the TLP voltage input being shown as signal 810 and signal 812.

As shown in the figure 800, when the input signal 810 begins to increase, the voltage across the VSD material layer begins to rise with the input voltage, but in the VSD material. The mass begins to conduct more and more current and then begins to diverge. At some point, the VSD material switches to a large electrical conduction and the response signal stabilizes at a value below 200 volts, although the input signal 810 continues to increase. The characteristic voltage of the VSD material layer can be estimated to be between 150 volts and 220 volts.

"FIG. 9" is a VSD material construction 900 showing vertical switching using a VSD material according to one embodiment. The vertically switched VSD material construction 900 described in FIG. 9 can be integrated into any electronic device including a substrate device such as a printed circuit board, a flexible circuit or a semiconductor wafer package to provide protection against ESD and For other overvoltage conditions, "Fig. 9" shows a cross-sectional view of a VSD material constructed on a substrate, such as a printed circuit board in the vertical direction.

The VSD material structure 900 of Fig. 9 includes a set of electrodes 920 and 922 disposed in contact with the VSD material structure 940, which is shown as a layer of the "Fig. 9" embodiment. The VSD material layer 940 has substantially the same thickness as the gap 942 and is represented as T. In commercial implementations, T can take a range of values depending on the construction and characteristic voltage of the VSD material 940 and the physical or operational performance required of other VSD materials 940. Specific values for T include 2 mils, 1.5 mils, 1 mil, and 0.5 mils. In general, a smaller T value can provide a lower characteristic voltage in the VSD material structure 940.

The via 930 passes through the VSD material layer 940 and contacts the electrode 922. The via 930 is substantially electrically conductive, and the interconnect layer 970 is disposed to contact the VSD material layer 940 along the horizontal plane opposite to the electrodes 920 and 922. Layers can be used to implement interconnect layer 970, which is described in the embodiment of FIG. 5, except that the Z-axis interconnect layer prevents current flow in the horizontal direction from being unsuitable for this Specific implementation.

Interconnect layer 970 is disposed on prepreg layer 980, which is part of a substrate device such as a printed circuit board and physically connects another layer of the substrate, core 982. Prepreg 980 is substantially insulating.

Via 930 and interconnect layer 970 are substantially electrically conductive and are generally assumed The impedance is negligible. Therefore, there is no significant loss of voltage between electrode 922 and interconnect layer 970.

If the voltage applied by voltage source 910 or by ESD pulse 912 between electrodes 920 and 922 exceeds the characteristic voltage of VSD material structure 940, VSD material structure 940 is substantially electrically conductive because electrode 922 and interconnect layer 970 will be substantially the same The voltage level at which the current flows through the VSD material 940 primarily occurs in the vertical direction between the electrode 920 and the interconnect layer 970. One reason for this is that the current tends to select the path with the least impedance to conduct and vertically through the VSD material layer 940 between the interconnect layer 970 and the electrode 920, which is generally the path of the lowest impedance.

In fact, the VSD material structure 940 in the "Fig. 9" embodiment is a vertical switch, and does not mean that the current will pass through the gap 942 strictly and only along the Z axis. Conversely, due to various effects as described in the "Fig. 3" embodiment, a certain degree of current flow may occur in the horizontal direction in the VSD material structure 940. In general, however, in the "Fig. 9" embodiment, when the VSD material 940 is substantially switched to conduct electricity, the current flow will mainly be in a direction substantially parallel to the Z-axis (vertical axis) of each substrate.

Since the current flows in the VSD material structure 940 in the "Fig. 9" embodiment, it mainly occurs in the vertical direction through the gap 942, and the characteristic voltage of the VSD material structure is determined by the thickness T of the gap 942. For some VSD material formulations, these characteristic voltages can be determined according to Equation 1.

An advantage of the vertically switched VSDM configuration 900 of the "Fig. 9" embodiment is that the electrodes 920 and 922 do not need to be very precise in the horizontal arrangement because their horizontal placement is not critical as long as the electrodes 920 and There is sufficient overlap between the interconnect layers 970 and the electrodes 922 have good electrical contact with the vias 930.

Another advantage of the vertically switched VSDM construction 900 of the "Fig. 9" embodiment is that its metal electrodes (e.g., made of copper), such as electrodes 920 and 922, can be disposed on the outer layer, thereby facilitating LED devices or other The heat dissipation and/or power transfer of the device can benefit from better heat dissipation.

In various embodiments, the vertically-switched VSDM configuration illustrated in FIG. 9 may include various other layers and features that are electrically conductive, insulating, and semi-conductive in implementation, as long as the general operating principle is followed, ie, the current is at VSD. There is essentially no loss in material structure conduction (eg, through a set of conductive features that are in electrical contact with each other), and when the VSD material is substantially conductive, it will travel across the vertical thickness of the VSD material structure. In the general design approach, the characteristic voltage of the VSD material is determined by the vertical thickness of the formed VSD material.

"Figure 10" is a VSD material construction 1000 showing vertical switching using a VSD material, according to one embodiment. The vertically switched VSD material construction 1000 of Figure 10 can be integrated into any electronic device that includes a substrate, such as a printed circuit board, a flexible circuit, or a semiconductor wafer package to provide protection against ESD and other In the case of overvoltage, "Fig. 10" shows a cross section of a VSD material structure in the vertical direction of a substrate such as a printed circuit board.

The vertical switching VSD material structure 1000 of "Fig. 10" is substantially similar to the VSD material structure 900 of "Fig. 9", except that it is not a single VSD material structure 900 of the "Fig. 9" embodiment. The VSD material construction in the "Fig. 10" embodiment has two VSD material structures: a VSD material layer 1040 having a vertical thickness T1 passes through the gap 1042 and a VSD material layer 1044 having a vertical thickness T2 passes through the gap 1046. In commercial implementation, the range of values that T1 and T2 can take depends on the formulation of VSD materials 1040 and 1044, as well as the characteristic voltages and other physical or operational properties required depending on the VSD material structures 1040 and 1044. In various embodiments, the formulations of VSD materials 1040 and 1044 may or may not be the same. Likewise, in various embodiments, the respective vertical thicknesses T1 and T2 of the VSD materials 1040 and 1044 may or may not be the same. Specific examples of T1 and T2 totals include 2 mils, 1.5 mils, 1 mil, and 0.5 mils. In general, a smaller T1 and/or T2 value is expected to provide a lower characteristic voltage for the VSD material structure 1040 and/or 1042.

In general, two or more VSD material structures are used to create a set of VSD material structures as one of the vertically switched VSDM constructs. In part, for example, VSD materials 1040 and 1044 are used to fabricate VSDM construction 1000, which may have the same, substantially identical, or mutually different properties, including: dielectric constant, adhesion characteristics, stiffness, flexibility, composition, and thickness. .

The VSD material structure 1000 of FIG. 10 includes a set of electrodes 1020 and 1022 that are disposed to contact the first VSD material structure and are displayed in FIG. 10 as the VSD material layer 1040. A via 1030 passes through the VSD material layers 1040 and 1044 and contacts the electrode 1022, which is substantially electrically conductive. Conductive layer 1070 is disposed along a horizontal plane opposite electrodes 1020 and 1022 to contact VSD material layer 1044. The conductive layer may be made of a conductive material (e.g., copper) or may be an interconnect layer, and each interconnect layer can be used to implement the conductive layer 1070, which is described in the embodiment of Figure 5. The difference is that the Z-axis interconnect layer effectively prevents horizontal current flow from being used for this purpose.

A conductive layer 1070 is disposed adjacent to the prepreg layer 1080, which is part of a substrate device, such as a printed circuit board or a flexible circuit, and is physically connected to another layer of the substrate, ie, the core 1082. Prepreg 1080 is substantially insulating.

Via 1030 and conductive layer 1070 are substantially electrically conductive and can generally assume a negligible impedance, and thus, there is no significant loss in voltage conduction between electrode 1022 and conductive layer 1070.

If the voltage applied through voltage source 1010 or ESD pulse 1012 exceeds the sum of the characteristic voltages of VSD material structures 1040 and 1044, VSD materials 1040 and 1044 will be substantially electrically conductive. Since electrode 1022 and conductive layer 1070 will be substantially at the same voltage potential, current flow through VSD material 1040 and 1044 will primarily occur in a vertical direction between electrode 1020 and conductive layer 1070. One reason for this is that the current tends to propagate with a path that selects the smallest impedance and passes vertically through the VSD material layers 1040 and 1044 between the conductive layer 1070 and the electrode 1020, which is generally the path of the lowest impedance.

Therefore, the VSDM structure 1000 of the "Fig. 10" embodiment will be switched vertically, and the current flow mainly occurs in the VSD material structures 1040 and 1044. The direction is substantially parallel to the Z axis (or vertical axis) of each substrate.

Since the current flows between the VSD material structures 1040 and 1044 of the "Fig. 10" embodiment, substantially the compound VSD formed by the two different VSD material structures 1040 and 1044 passing through the gaps 1042 and 1046 in the vertical direction will occur. The characteristic voltage of the material structure is determined by the formulation of the two VSD materials and the thickness T1 of the gap 1042 and the thickness T2 of the gap 1046. Some recipes for VSD materials. This characteristic voltage can be determined by adding the characteristic voltages of the VSD material structures 1040 and 1044 that pass through the gaps 1042 and 1046, respectively.

In general, the structure of a compound of two or more VSD material structures occurs via vertical switching, regardless of whether they are in direct physical contact with each other, and the effective characteristic voltage of a group of VSDM structural compounds is related to the sum of the thicknesses of the VSD material structures, such that As a result, the total compound thickness increases, and the characteristic voltage of the obtained compound also tends to increase.

In various embodiments, the vertically switched VSDM configuration of "Fig. 10" may include various other layers and features that are electrically conductive, insulating, and semiconductive in implementation, as long as the general operating principle is followed, that is, the current is in two or More vertical VSD material structures are substantially free of conduction (eg, through a set of conductive features that are in electrical contact with each other), and when each VSD material is substantially conductive, it will traverse two or more VSD material structures. The vertical thickness is to run. In the general design approach, the characteristic voltage of a composite VSD material structure is determined by the total vertical thickness of each VSD material structure and the characteristic voltage of each VSD material.

"11th" is a VSD material construction 1100 that uses a VSD material to achieve vertical switching, according to one embodiment. The vertically switched VSD material structure 1100 of "Fig. 11" can be integrated into any electronic device including a substrate device for providing protection against ESD and other overvoltage conditions. For example, in the substrate device, the VSD material structure 1100 can be In each of the embodiments including the printed circuit board and the semiconductor chip package, "Fig. 11" shows a cross section of the VSD material structure in the vertical direction of the substrate.

The vertical switching VSD material structure 1100 of "Fig. 11" is substantially similar to the VSD material structure 1000 of "Fig. 10", except that it is not the two VSD material structures of the "Fig. 10" embodiment. The "11th" embodiment employs a single VSD material layer 1140 having a vertical thickness T through the gap 1142. However, in various embodiments, multiple VSD material layers may be utilized, as described in the "Figure 10" embodiment. In commercial implementation, the range of values that T can take depends on the formulation of the VSD material 1140 and the characteristic voltages and other physical or operational properties required depending on the VSD material structure 1140. Specific numerical values for thickness T can be considered during the manufacturing process, including: 2 mils, 1.5 mils, 1 mil, 0.5 mils, 0.2 mils, and less. In general, a smaller value of T is expected to allow the VSD material structure 1140 to provide a lower characteristic voltage.

The VSD material structure 1100 of FIG. 11 includes a set of electrodes 1120 and 1122 that are disposed to contact the VSD material structure 1140. Conductive prepreg layer 1170 is disposed along a horizontal plane opposite electrodes 1120 and 1122 to contact VSD material layer 1140. The electrically conductive prepreg layer 1170 can be a substrate device such as a printed circuit board, a flexible circuit, or a layer in a semiconductor device package. The electrically conductive prepreg layer 1170 is (or includes) a layer and/or a set of electrically conductive structures suitable for little or no loss of current conduction. The electrically conductive prepreg layer 1170 is another layer that physically contacts the substrate, ie, the core 1182, which is substantially insulated.

If the voltage applied through voltage source 1110 or ESD pulse 1112 exceeds the characteristic voltage of VSD material structure 1140, VSD material 1140 will be substantially conductive. Current flowing through the VSD material 1140 will primarily occur between the electrode 1120 and the electrically conductive prepreg layer 1170 and between the electrode 1122 and the electrically conductive prepreg layer 1170. Once current from either of the electrodes 1120 or 1122 flows through the VSD material structure 1140 in a particular vertical direction, current will propagate along the conductive prepreg layer 1170 with minimal or no loss, and then the current will be in the opposite vertical direction. The flow through the VSD material structure 1140 toward the other of the two electrodes 1120 or 1122. Current The reason for the main propagation through the VSD material layer 1140 in the vertical direction is that the current tends to propagate through the path of the selected minimum impedance and vertically passes through the VSD material layer 1140 between either of the electrodes 1120 or 1122 and the conductive prepreg 1170, generally Said to be the path of the lowest impedance. If the distance between the two electrodes 1120 and 1122 is reduced to match the gap 1142, the VSD material 1140 can conduct more current in the horizontal direction. In some embodiments, this can be achieved by creating a conductivity that exhibits anisotropy such that the composition is substantially electrically conductive when conducting along the Z-axis, but is substantially insulating at the level of the VSD material 1140.

Therefore, the VSDM structure 1100 of the "Fig. 11" embodiment will be vertically switched, and the current flow mainly occurs in the VSD material structure 1140 and the direction is substantially parallel to the Z axis (or vertical axis) of each substrate.

In various embodiments, the vertically switched VSDM structure of "Fig. 11" may include various other layers and features that are electrically conductive, insulating, and semi-conductive in implementation, as long as the general working principle is adhered to, that is, when the VSD material structure is basically When it becomes conductive, its current first passes through one or more VSD material structures in a vertical direction, with little or no loss in the horizontal direction, and when conduction passes through one or more in the opposite vertical direction. The VSD material structure remains substantially conductive when the VSD material structure is used. In a typical design, the characteristic voltage of one or more VSD material layers is determined by the total vertical thickness of each VSD material structure and the characteristic voltage of each VSD material.

"FIG. 12A" is a VSD material construction 1200 showing vertical switching using a VSD material, according to one embodiment. The vertically switched VSD material construction 1200 of FIG. 12A can be integrated into any electronic device that includes a substrate device for providing protection against ESD and other overvoltage conditions. For example, in the substrate device, the VSD material structure 1200 can be In each of the embodiments including the printed circuit board and the semiconductor chip package, "12A" shows a cross section of the VSD material structure in the vertical direction of the substrate.

The vertically switched VSD material construction 1200 of Figure 12A includes a VSD material layer 1240 having a vertical thickness T through the gap. 1242. In various embodiments, multiple VSD material layers can be utilized, as described in the "Figure 10" embodiment. In commercial implementation, the range of values that T can take depends on the formulation of the VSD material 1240 and the characteristic voltages and other physical or operational properties that are required depending on the VSD material 1240. Specific numerical values for thickness T can be considered during the manufacturing process, including: 2 mils, 1.5 mils, 1 mil, 0.5 mils, 0.2 mils, and less. In general, a smaller value of T is expected to provide a lower characteristic voltage for the VSD material structure 1240.

The VSD material construction 1200 of FIG. 12A includes a set of electrodes 1120, 1122, and 1124 that are configured to contact the VSD material structure 1240. The conductive layer 1270 is disposed adjacent to the prepreg layer 1230. The prepreg layer 1230 is disposed between the conductive layer 1270 and the VSD material layer 1240. The interconnect layer 1280 is disposed in contact with the VSD material layer 1240. In one embodiment, an interconnect layer 1280 is formed in the prepreg layer 1230 as illustrated in FIG. 12A. In one embodiment, the interconnect layer 1280 can be disposed as a separate layer (ie, not formed in the prepreg layer 1230) from the VSD material 1240 from the prepreg layer 1230. The prepreg layer 1230 can be a substrate device such as a printed circuit board, a flexible circuit, or a layer in a semiconductor device package.

Vias 1250 pass through prepreg layer 1230 and electrically connect interconnect layer 1280, and establish an electrical connection between conductive layer 1270 and interconnect layer 1280.

In the embodiment of Figure 12A, electrode 1220 and electrode 1224 are connected to ground. In some embodiments, one or both electrodes can be connected to different points in the circuit, which may include connection to a voltage source, circuit element or component, or another reference voltage potential for ESD pulses or other voltage directly connected .

If the voltage applied by the ESD pulse 1212 (or through the voltage source) of the conductive layer 1270 exceeds the characteristic voltage of the VSD material structure 1240, the VSD material 1240 will be substantially electrically conductive. Current flowing through the VSD material 1240 will primarily occur between the interconnect layer 1280 and the electrode 1220 and/or the electrode 1224.

Therefore, the VSDM structure 1200 of the "12A" embodiment will be vertically switched, and its current flow mainly occurs in the VSD material structure 1240. The direction is substantially parallel to the Z-axis (or vertical axis) of each substrate. Subsequently, the electrical path through which the current corresponding to the ESD signal 1212 flows through the VSDM structure 1200 is indicated as "ESA discharge path 1290" as shown in FIG. 12A.

The embodiment of "Fig. 12A" further shows a circuit element shown as embedded impedance 1296. In various embodiments, this circuit component can be integrated into or partially integrated into VSD fabric 1200 or can communicate with VSDM fabric 1200 (eg, it can be embedded in the same printed circuit board as VSDM fabric 1200, or installed) On the surface of the printed circuit board to be combined with the VSDM construction 1200).

In the embodiment of FIG. 12A, embedded impedance 1296 is shown as a circuit component, at least a portion of which is embedded within VSDM fabric 1200. In particular, "Fig. 12A" shows that the embedded impedance 1296 is at least partially embedded within the prepreg layer 1230. In an alternative or additional embodiment, the embedded impedance 1296 can be disposed within the substrate or at other locations within the VSDM construction 1200. For example, the embedded impedance 1296 can be disposed within the VSD material structure 1240, within another printed circuit board layer, or within another substrate, such as a semiconductor package.

In various embodiments, embedded impedance 1296 is comprised of one or more circuit elements or includes one or more circuit elements. In various embodiments, embedded circuit component impedance 1296 can include one or more resistors, one or more inductors, one or more capacitors, one or more ferroelectric circuit components (eg, embedded ferroelectric circuit components, It may or may not contain a VSD material, one or more diodes, one or more transistors, one or more filters (eg one or more low pass, band pass, high pass filters or Various combinations of filter stages), any passive or active circuit or electronic component, any interconnect layer with negligible impedance, any interconnect layer with non-negligible impedance (eg high dielectric material layer), any Electrodes or other electrically conductive structures having non-negligible impedance and/or any combination of the above.

The embedded impedance 1296 can be used to connect the VSD material structure 1240 to provide partial or complete ESD protection to the electronic components, such as the electronic component 1298 illustrated in FIG. 12A. In "Figure 12A", electronic component 1298 Connected to the embedded impedance through electrode 1228, the embedded impedance 1296 is also electrically coupled to conductive layer 1270. Without the VSD material 1240, an ESD pulse or other large voltage applied to the conductive layer 1270 will cause large voltages and/or currents to propagate through the embedded impedance 1296 to the electronic component 1298. When the VSD material 1240 is present, when the corresponding large voltage exceeds the characteristic voltage of the vertically switched VSD material structure 1240, the vertically switched VSD material structure 1240 is switched to be turned on, and then at least part of the ESD pulse is transferred to the ground through the electrode 1220. Otherwise electronic component 1298 will be reached. Thus, the vertically switched structure 1200 protects the electronic component 1298 with embedded impedance 1296 from potential destructive ESD pulses or other overvoltage conditions of the conductive layer 1270.

The circuitry and operation of the circuitry can be used to connect to the VSD material structure 1240 as part of the vertically switched fabric 1200 to provide partial or complete ESD protection of the electronic components, such as the electronic component 1298 illustrated in FIG. 12A, which is disclosed in detail. U.S. Patent Application Serial No. <RTIgt;''''''''"""""""""""" The vertically-switched VSDM structure and/or the claims of the present invention can be used in the embodiments and claims disclosed in U.S. Patent Application Serial No. 13/096,860 to provide enhanced protection against electronic components from being subjected to ESD and others. Overvoltage condition.

In one embodiment, electronic component 1298 can be embedded within VSDM fabric 1200. In one embodiment, electronic component 1298 can be embedded in a substrate (eg, the same printed circuit board) that also incorporates VSDM construction 1200. In one embodiment, electronic component 1298 can be attached to the surface of a substrate that is also integrated with VSDM construction 1200. In one embodiment, the electronic component 1298 can be integrated into a different electronic device that is electrically coupled to a substrate that incorporates the VSDM fabric 1200 (eg, the VSDM fabric 1200 can be integrated into a connector that is mounted to an electronic component Electronic device). In one embodiment, the VSDM fabric 1200 is included within the package of the electronic component 1298, or otherwise connected or incorporated into the substrate and physically coupled to the electronic component 1298. Or electrical communication.

In various embodiments, electronic component 1298 can be any one or more of the following: a semiconductor wafer or other integrated circuit (IC) (eg, microprocessor, controller, memory chip, RF circuit) , a baseband processor, etc.), a Light Emitting Diode (LED), a MEMS wafer or substrate, or any other component or circuit component disposed within the electronic device.

In one embodiment, the embedded impedance 1296 can be implemented using a ferroelectric circuit component that includes a conductive structure that is partially embedded in an ferrous material. The ferritic circuit component comprises an iron-based VSD material, and an implementation suitable for embedding is disclosed in U.S. Patent Application Serial No. 13/115, 068, filed on This article. In various embodiments, the embedded impedance 1296 can be implemented as an embedded ferromagnetic inductor, an embedded ferroelectric VSD material inductor, an embedded ferroelectric capacitor, an embedded ferro VSD material capacitor, or as any other embedded Iron circuit components or embedded iron VSD material circuit components.

"12B" is a VSD material construction 1202 that displays vertical switching using a VSD material in accordance with one embodiment. The embodiments shown in "Fig. 12A" and "Fig. 12B" are substantially the same, except that the embedded impedance 1296 of the embodiment of Fig. 12B is replaced by the embedded impedance 1297, and the electrode 1228 is replaced by the electrode 1229. Replace. In "Fig. 12B", the embedded impedance 1297 is no longer embedded in the prepreg layer 1230, but is separated from the prepreg layer 1230 through the conductive layer 1270. An optional electrode 1229 connects the embedded impedance 1297 to the electronic component 1299.

In various embodiments, the embedded impedance 1297 and the electronic component 1299 can be substantially the same as the embedded impedance 1296 and the electronic component 1298 of the "12A" embodiment, respectively, with the difference being the embedded impedance. 1297 and the electronic component 1299 are set as described in the "Fig. 12B".

In one embodiment, "12B" shows the embedded Impedance 1297 is not embedded in VSDM construction 1200, but is embedded in a substrate (eg, the same printed circuit board) that also incorporates VSDM construction 1200. In one embodiment, the embedded impedance 1297 and/or the electronic component 1299 can be attached to the surface of the substrate that also incorporates the VSDM construction 1200. In one embodiment, the embedded impedance 1297 and/or the electronic component 1299 can be combined in a different electronic device that is electrically coupled to a substrate that incorporates the VSDM fabric 1200 (eg, the VSDM fabric 1200 can be bonded to the connector, It is mounted on an electronic device that includes embedded impedance 1297 and/or electronic component 1299. In one embodiment, VSDM fabric 1200 and embedded impedance 1297 are included in the package of electronic component 1298, or otherwise connected or incorporated into the substrate for physical or electrical communication with electronic component 1298.

"FIG. 13" shows a VSDM construction 1300 comprising a VSD material layer 1340 that can be integrated on a printed circuit board or another substrate and that implements vertical switching, according to one embodiment.

The VSDM structure 1300 shown in FIG. 13 includes conductive signal layers, denoted as L1~L6 conductive layers, and numbered as conductive layers 1370, 1372, 1374, 1376, 1378, and 1379. These signal layers can conduct electrical signals within the printed circuit board, or conduct electrical signals to components and circuit components mounted on the printed circuit board, or conduct electrical signals from components and circuit components mounted on the printed circuit board, or Used as a ground or other voltage reference point. These signal layers are essentially isolated by an insulating or dielectric layer built into the substrate device (not explicitly defined in Figure 13). For printed circuit boards, the insulating layer can comprise: a prepreg filler, a core, a laminated layer, or any other similar film or structure. The VSDM structure 1300 shown in Fig. 13 is disposed along the vertical direction of the printed circuit board or other substrate.

The VSDM structure 1300 shown in Fig. 13 also includes a through hole 1350. In various embodiments, the vias 1350 can be vias, pads, circuits, or any other structure that is configured to be electrically conductive and facilitate electrical signal propagation. The through hole 1350 is electrically connected to the L1 layer 1370 and the L2 layer 1372.

The VSDM structure 1300 shown in Fig. 13 also includes a VSD material structure, which is shown as a VSD material structure 1340. The VSD material structure 1340 is disposed in a horizontal direction and through a plurality of conductive layers of the VSDM structure 1300. As shown in FIG. 13, the VSD material structure 1340 passes through the L2 conductive layer 1374 and the L3 conductive layer 1376. In various embodiments, the VSD material structure 1340 can pass through two or more conductive layers or other conductive structures within a substrate such as a printed circuit board, a flexible circuit, or a semiconductor package. In one embodiment, the VSD material structure 1340 can be filled with a VSD material to a via (eg, a buried via) or any other available volume within a substrate (eg, a printed circuit board, a flexible circuit, or a semiconductor package). produce. In one embodiment, the VSD material structure 1340 is created by making a hole in the substrate (eg, using mechanical or laser) and then filling the VSD material in the hole. In one embodiment, the VSD material structure 1340 can be used to create a vertical cavity in the printed circuit board during fabrication of the substrate (eg, by aligning gaps or holes previously created in different adjacent layers of the printed circuit board). Then, the VSD material is injected and the VSD material is solidified in the vertical cavity, and is formed by depositing a VSD material in a pre-built blank space in the substrate.

If the ESD pulse 1312 reaches the L1 layer 1370 (or another voltage source is applied to the L1 layer 1370), the corresponding voltage will propagate to the L2 layer 1372 with little or no loss. At L2 layer 1372, ESD pulse 1312 reaches the VSD material structure 1340 in response to the generated voltage. If the voltage across the VSD material structure 1340 through a particular vertical gap exceeds the characteristic voltage of the VSD material structure 1340, the VSD material passing through the gap will switch to conduct and will substantially become conductive.

In the embodiment of Fig. 13, the L3 conductive layer 1374 is connected to the ground. In other embodiments, the L3 conductive layer 1374 (or another conductive structure or layer electrically connected to the corresponding VSD material structure) can be connected to another point toward the conducted ESD signal, eg, any voltage reference Point or circuit component or component.

Because in the embodiment of "Fig. 13", the L3 conductive layer 1374 Connected to ground and the ESD pulse 1312 propagates to the L2 conductive layer 1372, the effective gap will trigger a vertical switch within the VSD material structure 1340, which is substantially the gap 1342, having an effective thickness T, by approximating the L2 conductive layers 1372 and L3 The vertical spacing between ground planes 1374 is determined. The thickness T will determine the characteristic voltage of at least a portion of the VSD material structure 1340 (eg, according to Equation 1). In some embodiments, more than one VSD material structure can be stacked vertically (whether adjacent or physically separated) or can be horizontally connected (eg, through an interconnect layer), as in other embodiments of the patent. Said.

Once the VSD material structure 1340 shown in the "Fig. 13" embodiment is switched to be conductive and substantially electrically conductive through the gap 1342, the current will primarily flow through the gap 1342 between the L2 conductive layer 1372 and the L3 ground plane 1374. Flow in the vertical direction. If this happens, the VSDM fabric 1300 has been switched vertically.

"FIG. 14" shows a VSDM construction 1400 that includes a VSD material construction 1440 that can be integrated on a printed circuit board or another substrate and that is suitable for vertical switching, in accordance with one embodiment. In one embodiment, "Fig. 14" shows an enlarged view of the VSDM structure 1300 of "Fig. 13".

The VSDM material structure 1400 shown in Fig. 14 includes three conductive signal layers, denoted as L1~L3 conductive layers, numbered as conductive layers 1470, 1472 and 1474. Conductive layer 1474 is connected to ground. Additionally, conductive layer 1474 can be connected to a circuit component or component, or to another voltage reference point. The three signal layers are separated by some insulating layer or dielectric layer built in each substrate device (not explicitly specified in "Fig. 14"). For printed circuit boards, these insulating layers may comprise prepreg fillers, cores, laminate layers or other similar films or structures. The VSDM structure 1400 shown in Fig. 14 is disposed along the vertical direction of the printed circuit board or other substrate.

The VSDM structure 1400 shown in Fig. 14 also includes a through hole 1450. In various embodiments, the vias 1450 can be vias, pads, circuits, or any other structure that is configured to be electrically conductive and facilitate electrical signal propagation. The through hole 1450 is electrically connected to the L11 layer 1470 and the L2 layer 1472.

The VSDM structure 1400 shown in Fig. 14 also includes a VSD material structure, which is shown as a VSD material structure 1440. The VSD material structure 1440 is disposed in a horizontal direction and electrically connected to the L2 conductive layer 1474 and the L3 conductive layer 1476. In various embodiments, the VSD material structure 1440 can pass through two or more conductive layers or other conductive structures within a substrate such as a printed circuit board, a flexible circuit, or a semiconductor package. In one embodiment, the VSD material structure 1440 can be filled with a VSD material to a via (eg, a buried via) or any other available volume within a substrate (eg, a printed circuit board, a flexible circuit, or a semiconductor package). produce.

If ESD pulse 1412 reaches L1 layer 1470 (or another voltage source is applied to L1 layer 1470), the corresponding voltage will propagate to via hole 1450 to L2 layer 1472 with little or no loss. At L2 layer 1472, ESD pulse 1412 reaches the VSD material structure 1440 in response to the generated voltage. If the voltage across the VSD material structure 1440 through a particular vertical gap exceeds the characteristic voltage of the VSD material structure 1440, the VSD material that passes through the gap will switch to conduct and will substantially become conductive.

Because in the embodiment of FIG. 14, the L3 conductive layer 1474 is connected to ground and the ESD pulse 1412 propagates to the L2 conductive layer 1472, the effective gap will trigger a vertical switch within the VSD material structure 1440, which is substantially the gap 1442. The effective thickness T is determined by approximating the vertical spacing between the L2 conductive layer 1472 and the L3 ground layer 1474. The thickness T will determine the characteristic voltage of at least a portion of the VSD material structure 1440 (eg, according to Equation 1). In some embodiments, more than one VSD material structure can be stacked vertically (whether adjacent or physically separated) or can be horizontally connected (eg, through an interconnect layer), as in other embodiments of the patent. Said.

When the VSD material structure 1440 shown in the "Fig. 14" embodiment is switched to be conductive and becomes conductive through the gap 1442, the current will mainly flow in the vertical direction through the gap 1442 between the L2 conductive layer 1472 and the L3 ground layer 1474. flow. If this happens, the VSDM fabric 1400 has been switched vertically. ESD pulse 1412 (or another voltage source) is applied to L1 layer 1470 and voltage Exceeding the characteristic voltage of the VSD material structure, the current will basically flow along the electrical path 1490 shown in Figure 14.

"Fig. 15A" is a VSD material construction 1500 showing vertical switching using one or more circuit elements connected using a VSD material, according to one embodiment. The vertically switched VSD material structure 1500 of FIG. 15A can be integrated into any electronic device including a substrate device for providing protection against ESD and other overvoltage conditions. For example, in the substrate device, the VSD material structure 1500 can be In each of the embodiments including the printed circuit board, the flexible circuit, and the semiconductor chip package, "Fig. 15A" shows a cross section of the VSD material structure in the vertical direction of the substrate.

The vertically switched VSD material structure 1500 of "Fig. 15A" is substantially similar to the VSD material structure 1100 of "Fig. 11" except that it does not use the conductive prepreg 1170 of the "Fig. 11" embodiment. In the embodiment of Fig. 15A, two interconnect layers 1570 and 1572 are used, which are connected by circuit element 1592. Circuit element 1592 has a non-negligible impedance and is represented as H in "Fig. 15A". In various embodiments, interconnect layers 1570 and 1572 may be or may comprise electrodes, interconnect layers or portions of interconnect layers, conductive layers or portions of conductive layers, or any other conductive structure.

The VSDM structure 1500 shown in FIG. 15A includes a VSD material structure 1540 disposed between the electrode 1520 and the interconnect layer 1572, and also between the electrode 1522 and the interconnect layer 1570, respectively. The VSD material structure 1540 of "figure 5" has a vertical thickness that is substantially uniform horizontal and substantially equal to the gap 1542, denoted T.

Interconnect layers 1570 and 1572 are disposed on adjacent substrate layers, core 1582, which are substantially insulating or dielectric. Additional layers may be present in the substrate device in combination with the VSDM construction 1500 (eg, one or more prepreg layers).

When the voltage generated by the ESD pulse 1512 (or through the voltage source 1510) is between the electrodes 1520 and 1522, the VSD material structure 1540 can be switched to be conductive and substantially conductive. The effective gap will trigger a vertical switch within the VSD material structure 1540, which is essentially twice the gap 1542, with an effective thickness The degree is approximately twice the value of T (this is because when the VSDM construction 1500 is switched vertically, the current will cross the gap 1542 twice, the opposite of the two directions). The thickness T will determine at least a portion of the characteristic voltage of the VSD material structure 1540 (eg, according to Equation 1). If the impedance of component 1592 is zero or negligible, or in the absence of component 1592, the minimum voltage must be generated by the ESD pulse before the VSD material structure is switched to conduct, the size of which is approximately equal to the characteristic voltage of VSD material structure 1540. Multiple (because the circuit between the two electrodes 1520 and 1522 is to be completed, the current must travel through the gap 1542 twice, twice in different vertical directions).

In the presence of an element 1592 having a non-negligible impedance, the minimum voltage must be generated by the ESD pulse 1512 before the VSD material structure 1540 is switched to conduct, which is approximately equal to the voltage drop across the element 1592. For example, if element 1592 is a resistor, when the voltage of ESD pulse 1512 is approximately equal to twice the characteristic voltage of VSD material structure 1540 plus the voltage drop across element 1592, VSD material structure 1540 will switch to conduction and substantially become Conductive.

In various embodiments, circuit component 1592 may be or may include one or more resistors, one or more inductors, one or more capacitors, one or more ferroelectric circuit components (eg, embedded ferroelectric circuit components, It may or may not contain VSD material), one or more diodes, one or more transistors, one or more filters (eg high pass, band pass, low pass filter or filter stage) Combination), any other passive or active circuit component or electronic component, any interconnect layer, electrode or other conductive structure having a non-negligible impedance, and any combination of the above. The circuit component 1592 can include any combination of signal electronics components and electronic components, and can be used in conjunction with the VSD material structure 1540 to provide some or all of the ESD in an electronic device or substrate device having the integrated VSDM fabric 1500. Protection.

In one embodiment, circuit component 1592 is embedded in a substrate, such as a printed circuit board, a flexible circuit, or a package of semiconductor devices. Please refer to FIG. 15A. For example, component 1592 can be embedded in a printed circuit board layer integrated with VSDM construction 1500 (eg, circuit component 1592 can be integrated in Core layer, prepreg layer, laminate layer or any other layer on the printed circuit board). In one embodiment, component 1592 can be an electronic component or circuit component that is mounted on a printed circuit board incorporating VSDM construction 1500. In one embodiment, component 1592 can be a circuit component that is integrated into a semiconductor wafer and provides protection through a package substrate that incorporates a VSDM construction.

In the embodiment of Figure 15A, the illustrated component 1592 is coupled between interconnect layers 1570 and 1572. In an alternative or additional embodiment, component 1592 or other circuit component can be disposed within the substrate or VSDM. Other locations within the structure 1500, for example, component 1592 or other circuit components can be disposed between electrode 1520 and VSD material structure 1540, between electrode 1522 and VSD material structure 1540, at voltage reaching electrode 1520 or electrode 1522 The electrical path of the voltage previously generated by the ESD pulse 1512, or in the electrical connection of the VSDM structure 1500 and one or more electronic components that are protected from ESD conditions.

In one embodiment, the component 1592 can be implemented using embedded circuit components that are embedded in at least a portion of the substrate by embedding a conductive structure in at least a portion of the ferric material. The ferroelectric circuit component comprises an iron VSD material, and an implementation suitable for embedding is disclosed in U.S. Patent Application Serial No. 13/115,068.

When the VSD material structure 1540 shown in the embodiment of FIG. 15A is switched to be conductive and substantially conductive through the gap 1542, the current will mainly flow in the vertical direction of the gap 1542, once at the electrode 1520 and the interconnect layer 1572. Between once, on the opposite side, between the electrode 1522 and the interconnect layer 1570.

In one embodiment, instead of a single VSD material structure 1540, the VSDM construction 1500 includes two VSD material structures having different vertical thicknesses such that the gap between the electrodes 1522 and the interconnect layer 1570 is different from the electrodes 1520 and interconnects. The gap between layers 1572.

In some embodiments, more than one VSD material structure can be stacked vertically (whether adjacent or physically separated layers).

In a commercial implementation, the thickness T of the gap 1542 can take a range of values depending on the configuration and characteristic voltage of the VSD material 1540 and other physical or operational properties of the VSD material 1540. Considering that the effective thickness of the VSDM construction 1500 is twice the value of T, the specific value of the thickness T may include 1 mil, 0.75 mil, 0.5 mil, 0.25 mil, 0.1 mil or less during production. In general, a smaller T value can provide a lower characteristic voltage in the VSD material structure 1540.

"FIG. 15B" shows a VSD material construction 1502 that is adapted to achieve vertical switching using a VSD material, a circuit component having a first impedance, and an embedded impedance component having a second impedance, in accordance with one embodiment. The embodiments of "Fig. 15A" and "Fig. 15B" are substantially the same, with the difference that the "Fig. 15B" embodiment replaces the component 1592 with the component 1593, and the circuit component is shown as an embedded impedance embedded in the VSD material structure 1540. 1597, the electronic component 1599 is electrically connected to the embedded impedance 1597, and the electrical connection can be realized through the optional electrode 1529.

In various embodiments, the architecture, implementation, and functionality of component 1593 can be substantially the same as component 1592 of the "15A" embodiment, with the difference that component 1593 has an impedance expressed as H1 and embedded impedance 1597 has The impedance of H2. In various embodiments, component 1593 and embedded impedance 1597 may or may not be the same type of circuit component (eg, they may all be inductors, or one of them may be a resistor and the other may be a capacitor) . In various embodiments, the impedances H1 and H2 may or may not be the same.

In various embodiments, the structure, implementation, and function of the component 1597 and the electronic component 1599 are substantially the same as the embedded impedance 1296 and the electronic component 1298 of the "12A" embodiment, respectively, with the difference that the component 1597 is provided. And electronic component 1599 is described in "FIG. 12B" and is used to interface with VSDM fabric 1502 with vertical switching.

As shown in Figure 15B, the embedded impedance 1597 is integrated into at least a portion of the VSD material structure 1540 and is electrically connected to the electrodes. 1522. Without the VSD material structure 1540, a large voltage applied to the electrode 1522 will conduct through the embedded impedance 1597 to the electronic component 1599, possibly damaging the electronic component 1599.

If the VSD material structure 1540 is present and switched to conduct when a sufficiently large ESD pulse 1512 is applied to the electrode 1522, at least a portion of the current flowing through the electronic component 1599 will flow through the VSD material 1540 to the interconnect layer 1597. The result is that the electronic component 1599 may also be embedded impedance 1597 protected from overvoltage damage.

The embedded impedance 1297 as described in the "12B" embodiment is not embedded in the VSD material layer 1540, and the embedded impedance 1597 can be replaced with the same substrate integrated in the VSDM structure 1502 (eg, the same printed circuit board). . In one embodiment, embedded impedance 1597 and/or electronic component 1599 can be mounted to the surface of the same substrate of VSDM construction 1502. In one embodiment, the embedded impedance 1597 and/or the electronic component 1599 can be integrated into different electronic devices that are electrically coupled to the substrate in which the VSDM configuration 1502 is integrated (eg, the VSDM configuration 1502 can be integrated into the connector, Mounted in an electronic device including embedded impedance 1597 and/or electronic component 1599). In one embodiment, VSDM construction 1502 and embedded impedance 1597 are included in the package of electronic component 1599, or otherwise mounted or incorporated into a substrate that is physically or in electrical communication with electronic component 1599.

"16th" is a combination of a vertically switched VSD material construction 1600 and a horizontally switched VSD material construction 1601, according to one embodiment. In the embodiment of "Fig. 10", the VSDM construction 1000 includes two VSD material structures disposed in a horizontal layer, which are switched in conjunction with vertical. In the "16th embodiment" embodiment, the VSD material constructions 1600 and 1601 incorporate a VSD material structure 1646 that is configured to be vertically switched through the gap 1648, and a VSD material structure 1640 that is configured to pass through the gap 1642. For horizontal switching.

In one embodiment, the vertically switched VSD material construction 1600 and the horizontally switched VSD material construction 1601 are integrated on different substrates, and Connected through connector 1628. In one embodiment, one or both of the vertically switched VSD material construction 1600 and the horizontally switched VSD material construction 1601 are integrated into a flexible substrate, and the connector 1628 is a flexible connector.

In the "16th embodiment" embodiment, the horizontally switched VSD material construction 1600 includes two sets of electrodes 1620 and 1622 and a VSD material structure 1646. Electrodes 1620 and 1622 are connected to a VSD material structure 1646 that spans a gap 1648 having a thickness T1. Interconnect layer 1670 is configured to connect VSD material structure 1646 and is opposite the connection surface of electrode 1620. The electrode 1622 shown in Fig. 16 passes through the VSD material layer 1670. In another embodiment, the electrode 1622 may not pass through the VSD material layer 1622 at all, in which case there may be a second vertical gap through the VSD material 1646 (the thickness of which is equal to or less than the thickness T1) through the vertical The switch takes place.

In the embodiment of "figure 16", the horizontally-switched VSD material structure 1601 includes two electrodes 1624 and 1626 and a VSD material structure 1640. The electrodes 1624 and 1626 are connected to the VSD material structure 1640 and span the vertical gap 1642 having a thickness T2. The interconnect layer 1672 is configured to connect to the VSD material structure 1640 with its connection surface opposite the connection surface of the electrodes 1624 and 1626.

In the embodiment of "figure 16", the electrically conductive structure is shown as connector 1628 that connects electrode 1622 of vertically switched VSD material construction 1600 with electrode 1624 of horizontally switched VSD material construction 1601. Connector 1628 can be a via, pad, circuit, interconnect layer, or any other structure that is configured to conduct and propagate electrical signals. In one embodiment, the connector 1628 is a flexible electrical connector.

The vertically switched VSD material construction 1600 and the horizontally switched VSD material construction 1601 in "Figure 16" can be integrated into any electronic device that includes a substrate device to provide protection against ESD and other overvoltage conditions. For example, a substrate device of a vertically-switched VSD material structure 1600 and a horizontally-switched VSD material structure 1601 can be integrated into various embodiments, including combining two flexible printed circuit boards through a flexible connector. Interconnecting printed circuit boards and semiconductor packages, or through, through flexible connectors The flexible connectors interconnect two semiconductor packages. Flexible connector applications may occur in flexible electronic devices, including: electronic devices with rotatable or moving surfaces (eg, mobile phones or tablets with a keyboard or adjustable screen) or designed to be flexible Electronic devices (eg, flexible LED displays).

"Figure 16" shows a cross section of each vertically switched VSD material structure 1600 and horizontally switched VSD material structure 1601. Each vertically switched VSD material structure 1600 and horizontally switched VSD material structure 1601 can be embedded in a separate substrate device. , printed circuit boards, flexible circuits or semiconductor packages. Figure 16 shows additional substrate layers such as core 1682 and core 1683.

In one embodiment, each vertically switched VSD material construction 1600 and horizontally switched VSD material construction 1601 operate independently in response to a corresponding ESD pulse, such as ESD pulse 1612. This vertically switched VSD material construction 1600 can occur when the ESD pulse 1612 is applied to the electrode 1620 and the electrode 1622 is grounded (or otherwise placed at a particular voltage potential), or if the ESD pulse 1612 is applied to the electrode 1622 and the electrode 1620 Grounded (or otherwise set at a specific voltage potential). The horizontally switched VSD material configuration 1601 may occur when the ESD pulse 1612 is applied to the electrode 1624 and the electrode 1626 is grounded (or otherwise placed at a particular voltage potential), or if the ESD pulse 1612 is applied to the electrode 1626 and the electrode 1624 Grounded (or otherwise set at a specific voltage potential).

In the embodiment shown in FIG. 16, the vertically switched VSD material construction 1600 and the horizontally switched VSD material construction 1601 can operate in response to an ESD pulse, such as an ESD pulse 1612, if the two configurations are switched together, It may be implemented that the electrode 1626 is grounded (or otherwise disposed at a particular voltage potential) and the ESD pulse 1612 is applied to the electrode 1620, or the electrode 1620 is grounded (or otherwise disposed at a particular voltage potential) and the ESD pulse 1612 is applied Electrode 1626. In this case, the VSD material structure 1646 can be vertically switched through the gap 1648, and the VSD material structure 1640 can be horizontally switched through the gap 1642.

In the case where the vertically switched VSD material structure 1600 between the electrode 1620 and the electrode 1626 and the horizontally switched VSD material structure 1601 are switched together, the VSD material structures 1640 and 1648 must be switched to be turned on, in order to do this, The voltage difference between electrodes 1620 and 1626 in response to ESD pulse 1612 must equal or exceed the sum of the characteristic voltages of VSD material structures 1640 and 1648.

When both VSD material structures 1640 and 1646 are switched to conduct and both are substantially conductive, current will propagate vertically through gap 1648 and horizontally through gap 1642.

In one embodiment, each VSD material structure 1640 and 1646 has a different composition and characteristic voltage (in volts). In one embodiment, the two VSD material structures 1640 and 1646 have the same composition. The VSD material structures 1640 and 1646 may or may not have the same characteristic voltage, depending on the implementation.

In commercial implementation, the range of values for the thicknesses T1 and T2 of the gaps 1648 and 1642 may depend on the formulation of the VSD material structures 1646 and 1640, as well as the characteristic voltages and other physical or operational characteristics described in the VSDM configurations 1600 and 1601. Specific example values for T1 and T2 include values of 2 mils, 1.5 mils, 1 mil or less. In general, a smaller value T allows the VSD material structures 1646 and 1640 to provide lower characteristic voltages.

In various embodiments, the vertically-switched VSDM configuration and/or the claims of the present patent can be implemented in a horizontally-switched configuration substrate, as described in FIG. For example, a vertically switched VSDM (such as the structure described in "Figure 15A") and a horizontally switched VSDM (such as the structure described in "Fig. 2") can be embedded in the substrate, and two The VSDM construction can be used together (eg, via connection electrode 122 to electrode 1620) to protect a particular electronic component, or can be used alone (eg, not in direct contact with two structures) to protect a single electronic component or a different electronic component.

The embodiment of "Fig. 16" also shows a circuit component representation For embedded impedance 1696, in various embodiments, this circuit component can be partially or fully integrated in the vertically switched VSDM fabric 1600, or can communicate with the vertically switched VSDM fabric 1600 (which can be embedded in the same The printed circuit board acts as a vertically switched VSDM fabric 1600 or can be mounted on a printed circuit board incorporating a vertically switched VSDM fabric 1600). In an alternative or additional embodiment, the embedded impedance 1696 or another similar circuit element may be partially or fully incorporated into the horizontally switched VSDM configuration 1601 or may be in communication with the horizontally switched VSDM configuration 1601 (which may be embedded in The same printed circuit board is used as the VSDM construction 1601, or can be mounted on a printed circuit board incorporating the VSDM construction 1601).

In the embodiment of "figure 16", the embedded impedance 1696 is shown as a circuit component that is at least partially embedded in the VSDM fabric 1600. Specifically, "figure 16" shows that the embedded impedance 1696 is at least partially embedded. In the VSD material structure 1646. In an alternative or additional embodiment, the embedded impedance 1696 can be placed at other locations within the substrate or VSDM construction 1600.

In various embodiments, the circuit components are at least partially embedded in a substrate, such as embedded impedance 1696 in "Figure 16," consisting of one or more circuit components, or one or more circuit components. In various embodiments, the embedded impedance 1696 can include one or more resistors, one or more inductors, one or more capacitors, one or more ferroelectric circuit components (eg, embedded ferroelectric circuit components, which may Will or may not contain VSD material), one or more diodes, one or more transistors, one or more filters (eg one or more low pass, band pass, high pass filters or filter stages) Various combinations), any passive or active circuit or electronic component, any interconnect layer, any electrode or other conductive structure having non-negligible impedance, and any combination thereof.

The embedded impedance 1696 can be used for VSD material structures 1640 and 1646 and provides partial or complete ESD protection of the electronic components, such as the electronic component 1698 illustrated in FIG. In "Figure 16," electronic component 1698 is shown as being connected to the embedded component via the electrode 1629. 1696, embedded impedance 1696 is also electrically coupled to electrode 1620. Without the VSD material 1640, an ESD pulse or other large voltage applied to the electrode 1620 would cause a large voltage and/or large current to pass through the embedded impedance 1696 to the electronic component 1698. However, in the presence of the VSD material 1648, the vertically switched VSDM fabric 1600 is switched to turn on as described above, after which at least a portion of the ESD pulses are transferred through the interconnect layer 1670, which would otherwise reach the electronic component 1698. Thus, the vertically switched structure 1600 employs an embedded impedance 1696 to protect the electronic component 1698 from potentially damaging ESD pulses or other overvoltage conditions of the electrode 1620.

The architecture and operation of the circuitry can be used to connect to VSDM fabrics 1600 and 1601 to provide partial or complete ESD protection for electronic components, such as the electronic component 1698 illustrated in FIG. 16, which is disclosed in detail in U.S. Patent Application Serial No. /096,860".

In one embodiment, electronic component 1698 can be embedded within VSDM fabric 1600. In one embodiment, the electronic component 1698 can be embedded in a substrate (eg, the same printed circuit board) that also incorporates the VSDM construction 1600. In one embodiment, electronic component 1698 can be attached to the surface of a substrate that is also integrated with VSDM construction 1600. In one embodiment, electronic component 1698 can be integrated into different electronic devices that are electrically coupled to a substrate that incorporates VSDM construction 1600 (eg, VSDM construction 1600 can be integrated into a connector that is mounted to an electronic component Electronic device). In one embodiment, the VSDM fabric 1600 is included within the package of the electronic component 1698, or otherwise connected or incorporated into the substrate for physical or electrical communication with the electronic component 1698. In one embodiment, the electrode 1629 is a flexible connector and the electronic component 1698 is disposed on a different substrate as part of the flexible electronic device.

In various embodiments, the embedded impedance 1696 and the electronic component 1698 can be substantially the same as the embedded impedance 1296 and the electronic component 1298 of the "12A" embodiment, respectively, with the difference being the embedded impedance. 1696 and electronic component 1698 are disposed in the "16th figure" Described in.

In one embodiment, the embedded impedance 1696 can be implemented using a ferroelectric circuit component that includes a conductive structure that is partially embedded in an ferrous material. In various embodiments, the embedded impedance 1296 can be implemented as an embedded ferromagnetic inductor, an embedded ferroelectric VSD material inductor, an embedded ferroelectric capacitor, an embedded ferro VSD material capacitor, or as any other embedded Iron circuit components or embedded iron VSD material circuit components.

"17th" is a VSD material construction 1700 showing vertical and horizontal switching using a VSD material according to one embodiment.

A VSD material structure using VSD material is suitable for vertical switching and horizontal switching, and is expressed as "two-way switching VSDM structure" or "double switching VSDM structure". In various embodiments, a two-way switched VSDM configuration, such as the two-way switched VSDM fabric 1700 illustrated in FIG. 17, can be employed in similar applications and implementations as described and/or claimed in this patent. The various vertical switching VSDM configurations differ in that the VSDM configuration of the bidirectional switching can additionally perform horizontal switching functions.

In various embodiments, the bidirectionally switched VSDM configuration includes a VSD material setting that facilitates vertical switching, as described in the patent and/or claims generally for each of the vertically switched VSDM configurations, in addition, In an embodiment, each VSD material structure is also electrically connected to at least one electrode, which facilitates horizontal switching as generally described in FIG. 1 and/or FIG. 2 .

The VSD material structure 1700 shown in Figure 17 includes an electrode 1720 (such as a spacer or an interconnect layer) electrically connected to a VSD material structure 1740 (eg, a VSD material layer), and the VSD material structure 1700 further includes an electrode. 1726 and electrode 1728 are also electrically connected to the VSD material structure 1740. In one embodiment, the electrode 1726 can be directly electrically connected to the interconnect layer 1770 (eg, the electrode 1726 can traverse the VSD material layer 1740 or the via to connect the electrode 1726 to the interconnect layer 1770). In various embodiments, either or both of electrodes 1726 and 1728 may be omitted, in which case the corresponding horizontal cut is provided by the omitted electrodes. The change function will not exist.

In one embodiment, the electrodes 1726 are electrically connected to the electrodes 1728 (eg, they may be part of the same conductive plane or may be directly connected by a printed circuit board or other connector).

The VSD material structure 1740 has a vertical gap 1742 having a vertical thickness T1 (eg, in mils). The interconnect layer 1770 (eg, an electrode or interconnect layer) is electrically connected to the VSD material structure 1740 and the electrode 1726. The core layer 1782 is disposed adjacent to the interconnect layer 1770 and may be one of the substrates (eg, a printed circuit board or a semiconductor package) incorporating the bidirectional switching structure 1700.

An optional via 1772 or any other conductive structure can traverse the layers of one or more of the substrates and establish an electrical connection with the interconnect layer 1782. This through hole can be created by laser drilling or any other suitable manufacturing method.

In one embodiment, electrode 1726, electrode 1728, and via 1772 are all connected to ground. In another embodiment, interconnect layer 1770 is not connected to ground (eg, via 1772 is not present or not connected to ground), in which case vertical switching between interconnect layer 1770 and electrode 1720 will will not happen. In another embodiment, electrode 1726 or electrode 1728 is not connected to ground, in which case horizontal switching between the unconnected electrode and electrode 1720 will not occur.

The dual-switching VSDM configuration 1700 of the "FIG. 17" embodiment is capable of both horizontal and vertical switching with electrodes 1726, electrodes 1728, and interconnect layer 1770 all connected to ground or another reference voltage potential. In this embodiment, there are three possible switching directions: (1) horizontal switching through the gap 1744 (having a horizontal thickness G1) between the electrodes 1726 and 1720; (2) through the gap between the electrodes 1728 and 1720 Horizontal switching of 1746 (having a horizontal thickness G2); and (3) vertical switching through a gap 1742 (having a vertical thickness T1) between the electrode 1720 and the interconnect layer 1770. The position where the gap traverses is the lowest of the characteristic voltage of the VSD material structure 1740, and the position at which the switching occurs is determined. If the VSD material structure also traverses three gaps 1742, 1744, and 1746, and the characteristic voltage is related to the gap size, the switching will occur at the smallest gap.

In one embodiment, the gaps 1744 and 1746 are substantially identical and the VSDM configuration 1700 is horizontally switched across the two gaps 1744 and 1746. In one embodiment, the gaps 1742, 1744, and 1746 are identical and the VSDM configuration 1700 is vertically switched through the gap 1742 and horizontally through the gaps 1744 and 1746. In one embodiment, the gaps 1742 and 1744 are substantially identical and the VSDM configuration 1700 is vertically switched through the gap 1742 and horizontally through the gap 1744. In one embodiment, the gaps 1742 and 1746 are substantially identical and the VSDM configuration 1700 is vertically switched through the gap 1742 and horizontally through the gap 1746.

In some embodiments, for some formulations of VSD materials and certain physical characteristics of horizontal and/or vertical gaps, the characteristic voltage across the gap may not be directly related to the gap size. Thus, in such an embodiment, the characteristic voltages of the two gaps having different thicknesses may still be the same. In one embodiment, the characteristic voltages across gaps 1744 and 1746 are substantially the same and VSDM configuration 1700 is horizontally switched through gaps 1744 and 1746. In one embodiment, the characteristic voltages are substantially the same across gaps 1742, 1744, and 1746, and VSDM construction 1700 is vertically switched through gap 1742 and horizontal switching gaps 1744 and 1746. In one embodiment, the characteristic voltages are substantially the same across gaps 1742 and 1744, and VSDM construction 1700 is vertically switched through gap 1742 and vertical switching gap 1744. In one embodiment, the characteristic voltages are substantially the same across gaps 1742 and 1746, and VSDM construction 1700 is vertically switched through gap 1742 and vertical switching gap 1746.

The VSDM structure of the vertical or bidirectional switching described in the present patent and/or the claims is implemented in the substrate 400 of the embodiment of FIG. 4A and the VSDM structure 490 and FIG. 5 of the embodiment of FIG. 4B. Example VSD material structure 500, VSD material structure 600 of the "Fig. 6" embodiment, VSD material structure 900 of the "Fig. 9" embodiment, and VSD material of the "10th figure" embodiment The structure of the VSD material structure 1100 of the embodiment of the "Fig. 11", the VSD material structure 1200 of the "12A" embodiment, the VSD material structure 1300 of the "Fig. 13" embodiment, and the "fourth figure" embodiment The VSD material structure 1500 of the VSD material structure 1400, the "FIG. 15A" embodiment, the VSD material structure 1600 of the "16th embodiment" embodiment, and the bidirectional switching structure 1700 of the "17th embodiment" embodiment can be used in electronic circuits and devices. Used for ESD protection of circuit components and components. Taking an electronic component as an example, it can be protected by a VSDM configuration such as vertical switching, including one or more of the following: a semiconductor wafer or another integrated circuit (IC) (eg, a microprocessor, a controller, a memory chip, RF circuit, baseband processor, etc.), light emitting diode (LED), MEMS wafer or substrate, or any other component or circuit component disposed within the electronic device.

The architecture and operation of the exemplary circuits utilizes a vertically switched VSDM configuration disclosed in U.S. Patent Application Serial Nos. 13/096,860 and 13/115,068 for ESD protection. While the exemplary circuit disclosed in these applications may have envisioned a horizontally switched VSDM configuration, this horizontal switching configuration can be replaced by the vertically switched VSDM configuration in the patent while retaining the general ESD protection function.

The vertically-switched VSDM configuration and the dual-switched VSDM configuration described and/or claimed in this patent can be used for ESD protection of substrate devices, such as one or a group of layers of a printed circuit board, a package of a semiconductor device, Or any other substrate can be mounted with a vertically switched VSD material construction, or a VSD material construction incorporating vertical switching can be incorporated into the substrate.

The vertically-switched VSDM configuration and the dual-switched VSDM configuration described and/or claimed in this patent can be used for ESD protection of an electronic device in which the VSDM configuration is integrated (eg, by incorporating a substrate, included) The electronic device) or the VSDM structure is connected (when the VSDM configuration incorporates a connector or cable mounted on the electronic device, or when the VSDM configuration is included in a device that connects the electronic device ).

Taking an electronic device as an example, it can be switched through the vertical The VSDM configuration or dual-switched VSDM configuration is protected, or it may include a substrate device, an electronic component, or a circuit component that is protected by the vertical or double-switched VSDM configuration, including a mobile phone, tablet, reader, mobile computer (eg notebook computer), desktop computer, server computer (eg server, blade server, multi-processor supercomputer), TV, video display, music player (eg portable MP3) Player), personal health management device (eg pulse monitor, heart monitor, distance monitor, temperature monitor, or any other sensor used in health management), LEDs and LEDs Diode devices, lighting modules, and any other consumer and/or industrial devices that use electrical or electromechanical signals to process or otherwise store data, other examples include satellites, military equipment, aerospace instruments, marine equipment.

In various embodiments, the vertically-switched VSDM configuration and dual-switched VSDM configuration described and/or claimed in this patent can be integrated into a connector that can be mounted on an electronic device to provide protection against ESD or other Overvoltage condition. This connector, for example, includes a power connector, a USB connector, an Ethernet cable connector, an HDMI connector, or any other connector that facilitates serial, side-by-side, or other types of data, signal, or power transmission. .

The present invention describes various embodiments and implementations of the invention in detail, and further embodiments and implementations, further improvements and alternative constructions are disclosed. In addition, the present invention is not limited to the specific embodiments and implementations disclosed, but the invention is intended to cover all modifications, equivalents and alternative embodiments and implementations.

In this specification, a collection refers to any group having one, two or more items. Similarly, a subset means that a group of N items is composed of N-1 or less corresponding items.

The terms "comprising", "including", "comprising", "example", "such as", and the like, are used in this specification and are not intended to Or words with similar meanings. As defined in the specification of the present invention, as well as all headers, headings and sub-labels The description is made for the purpose of facilitating the understanding, but is not intended to limit the scope of the claims of the invention. Each definition should cover other equivalent projects, techniques, or vocabulary, or be familiar with the corresponding project, technology, or vocabulary that the learner knows or can recognize and recognize as equivalent or replaceable. Unless the context requires otherwise, the verb “may” indicates an opportunity that may be achieved by the corresponding action, step, or implementation, rather than emphasizing that the corresponding action, step, or implementation must occur, and does not emphasize the corresponding action, step, or implementation. The method must be achieved in accordance with what is described.

While the embodiments of the present invention have been described above, the above description is not intended to limit the scope of the invention. Any person skilled in the art to which the invention pertains may make some modifications in the form and details of the embodiments without departing from the spirit and scope of the invention. This shall be subject to the definition of the scope of the attached patent application. Furthermore, individual features, whether individually presented as part of an embodiment or as part of an embodiment, may be combined with other features which are individually or as part of other embodiments, even if those unique features are not. It is to be understood that the combination of features not described is not to be excluded from the scope of the invention.

1200‧‧‧VSD material construction

1212‧‧‧ESD signal

1220, 1224‧‧‧ electrodes

1228‧‧‧electrode

1230‧‧‧Prepreg layer

1240‧‧‧VSD material layer

1242‧‧‧ gap

1250‧‧‧through hole

1270‧‧‧ Conductive layer

1280‧‧‧Interconnecting layer

1290‧‧‧ESD discharge path

1296‧‧‧Embedded impedance

1298‧‧‧Electronic components

Claims (20)

A vertically-switched voltage-modulated dielectric material (VSDM) structure is formed in a substrate, and the vertically-switched voltage-modulated dielectric material structure comprises: a. a first conductive element for being disposed on the substrate a horizontal layer and a second conductive element disposed on a second horizontal layer of the substrate, the second horizontal layer being different from the first horizontal layer; b. a VSDM structure having a characteristic voltage and a vertical thickness, the VSDM structure a third horizontal layer disposed on the substrate, the third horizontal layer being different from the first horizontal layer and the second horizontal layer; c. at least a portion of a circuit component is embedded in the substrate, the circuit component having an impedance; and d Wherein the VSDM structure is used to become substantially conductive across a vertical thickness and conduct current between the first conductive element and the second conductive element in response to an ESD pulse exceeding the characteristic voltage. The vertically-switched voltage-modulated dielectric material structure according to claim 1, wherein the first conductive element is an interconnect layer, a Z-axis conductive strip, a silver paste, a copper paste, a silver-coated copper layer, and a carbon. Layer, conductive epoxy, conductive polymer, electrode, gasket, lead, circuit, via, wire or signal layer. A vertically-switched voltage-modulated dielectric material construction as described in claim 1 wherein the vertical thickness is less than 2 mils. The vertically-switched voltage-modulated dielectric material structure according to claim 1, wherein the substrate is a printed circuit board, a single-layer or multi-layer printed circuit board, a package of a semiconductor device, a light-emitting diode substrate, Integrated circuit substrate, interposer, platform for connecting two or more electronic components, stacked package specifications, wafer level package, package-in-package, system-in-package, or at least two packages Or a stacked combination of substrates. The vertically-switched voltage-modulated dielectric material structure as described in claim 1 further includes an electronic device. Vertically switched voltage-modulated dielectric material as described in claim 5 Qualitative structure, wherein the electronic device is a mobile phone, a tablet computer, an e-reader, a mobile computer, a desktop computer, a server, a television, a video display, a music player, a personal health management device, a light emitting diode, A device comprising at least one light emitting diode or a lighting module. The vertically-switched voltage-modulated dielectric material structure as described in claim 1, wherein the circuit component comprises a resistor, an inductor, a capacitor, a ferroelectric circuit component, a ferroic VSDM circuit component, a diode, At least one of a transistor, a filter, or an interconnect layer having an impedance. An electronic device comprising a substrate and a vertically switched voltage-modulated dielectric material (VSDM) structure, the VSDM structure being incorporated in the substrate, the substrate comprising three different horizontal layers, the VSDM structure comprising: a. a conductive element is disposed on the first horizontal layer, and a second conductive element is disposed on the second horizontal layer; b. a VSDM structure has a characteristic voltage and a vertical thickness, and the VSDM structure is disposed in the third horizontal layer C. at least a portion of a circuit component embedded in the substrate, the circuit component having an impedance; and d. wherein the VSDM structure is used to become substantially conductive across a vertical thickness, and the first conductive component and the second conductive component are A current is conducted between them in response to an ESD pulse that exceeds the characteristic voltage, the VSDM configuration providing ESD protection for the electronic device. The electronic device of claim 8, wherein the electronic device is a mobile phone, a tablet computer, an e-reader, a mobile computer, a desktop computer, a server, a television, a video display, a music player, A personal health management device, a light emitting diode, a device comprising at least one light emitting diode or a lighting module. The electronic device of claim 8, wherein the first conductive element is an interconnect layer, a Z-axis conductive strip, a silver paste, a copper paste, a silver coated copper layer, a carbon layer, a conductive epoxy, and a conductive Polymer, electrode, gasket, lead, circuit, via, wire or signal layer. The electronic device of claim 8, wherein the vertical thickness is less than 2 mils. The electronic device of claim 8, wherein the substrate is a printed circuit board, a single-layer or multi-layer printed circuit board, a package of a semiconductor device, a light-emitting diode substrate, an integrated circuit substrate, and a board ( Interposer), a platform that connects two or more electronic components, a stacked package specification, a wafer level package, a package-in-package, a system-in-package, or a stacked combination of at least two packages or substrates. The electronic device of claim 8, wherein the circuit component comprises a resistor, an inductor, a capacitor, a ferroelectric circuit component, a ferroic VSDM circuit component, a diode, a transistor, a filter, or an impedance. At least one of the interconnect layers. A vertically-switched voltage-modulated dielectric (VSD) material structure comprising: a. a first conductive element and a second conductive element, the first conductive element and the second conductive element being disposed in a first horizontal layer b. an interconnect layer for being disposed in a second horizontal layer; c. a third conductive element for connecting the second conductive element to the interconnect layer; and d. a VSD material structure for setting In a third horizontal layer, the VSD material structure has a characteristic voltage spanning a vertical gap formed between the first conductive element and the interconnect layer; e. wherein the VSD material is configured to vertically switch across the The vertical gap is in response to an ESD pulse that exceeds the characteristic voltage. The structure of claim 14, wherein the first conductive element is an interconnect layer, a Z-axis conductive strip, a silver paste, a copper paste, a silver coated copper layer, a carbon layer, a conductive epoxy resin, and a conductive polymerization. Object, electrode, gasket, lead, circuit, via, wire or signal layer. The structure of claim 14, wherein the vertical thickness is less than 2 mils. The structure of claim 14, wherein the structure is included In a substrate. The structure of claim 17, wherein the substrate is a printed circuit board, a single or multi-layer printed circuit board, a package of a semiconductor device, a light-emitting diode substrate, an integrated circuit substrate, and an interposer. A platform that connects two or more electronic components, a stacked package specification, a wafer level package, a package-in-package, a system-in-package, or a stacked combination of at least two packages or substrates. The structure of claim 14, wherein the structure is included in an electronic device. The structure of claim 19, wherein the electronic device is a mobile phone, a tablet computer, an e-reader, a mobile computer, a desktop computer, a server, a television, a video display, a music player, and an individual. A health management device, a light emitting diode, and a device including at least one light emitting diode or a lighting module.