TW201327630A - A film peeling apparatus, a method thereof, and a wafer laminating equipment - Google Patents
A film peeling apparatus, a method thereof, and a wafer laminating equipment Download PDFInfo
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Abstract
Description
本發明是有關於一種晶圓壓膜設備,特別是指一種能順利撕除保護膜的晶圓壓膜設備。The invention relates to a wafer laminating device, in particular to a wafer laminating device capable of smoothly tearing off a protective film.
一般在晶圓製程中,光阻的塗布可選用濕式光阻塗佈製程以及乾式光阻壓膜製程。以乾式光阻壓膜製程來說,由於乾膜需先依附在一保護膜(Mylar)上,所以在壓膜製程中,會先將相互依附的保護膜及乾膜經熱壓黏合於晶圓之上,再將該保護膜撕除,達成光阻塗布的效果。Generally, in the wafer process, the photoresist coating can be performed by a wet photoresist coating process and a dry photoresist film process. In the dry photoresist film process, since the dry film needs to be attached to a protective film (Mylar), in the lamination process, the protective film and the dry film attached to each other are bonded to the wafer by thermocompression. On the top, the protective film is peeled off to achieve the effect of photoresist coating.
保護膜撕除的方式,一般是採用膠帶黏附後拔除,以便自動化進行。然而可能因為乾膜的材質等種種因素,乾膜在受熱壓後溢膠致使保護膜周緣被封閉,撕除時會產生負壓,而無法被膠帶黏附撕除。The method of tearing off the protective film is generally carried out by tape adhesion and then removed for automation. However, due to various factors such as the material of the dry film, the dry film may be sealed after being subjected to hot pressing, so that the periphery of the protective film is closed, and a negative pressure is generated when the film is removed, and cannot be peeled off by the tape.
因此,一種能順利撕除保護膜的晶圓壓膜設備,遂成為本發明要進一步改進的主題。Therefore, a wafer lamination apparatus capable of smoothly peeling off a protective film has become a subject of further improvement of the present invention.
因此,本發明之目的,即在提供一種能順利撕除保護膜的晶圓壓膜設備。Accordingly, it is an object of the present invention to provide a wafer lamination apparatus capable of smoothly tearing off a protective film.
本發明之另一目的,在於提供一種能順利撕除保護膜的晶圓壓膜設備的撕膜裝置。Another object of the present invention is to provide a tear film device for a wafer lamination apparatus capable of smoothly peeling off a protective film.
於是,本發明晶圓壓膜設備,包含一機台、一壓膜機構、一支持單元與一撕膜裝置。Therefore, the wafer laminating apparatus of the present invention comprises a machine table, a film pressing mechanism, a supporting unit and a tear film device.
該壓膜機構設置在該機台上,包括一具有一電熱壓合面的上腔體。The laminating mechanism is disposed on the machine and includes an upper cavity having an electrothermal pressing surface.
該支持單元設置在該機台上,支持相互依附的一披覆層及一覆膜。The support unit is disposed on the machine and supports a covering layer and a film attached to each other.
該撕膜裝置設置在該機台上,將該覆膜自該披覆層撕除,並包含一切割單元及一覆膜移除機構。The tear film device is disposed on the machine, and the film is peeled off from the coating layer, and comprises a cutting unit and a film removing mechanism.
該切割單元包括一刀具,該刀具受驅動而沿該披覆層平面移動,在該覆膜切割出一切縫。The cutting unit includes a cutter that is driven to move along the plane of the cladding layer to cut all seams in the coating.
該覆膜移除機構包括一黏附件。該黏附件受驅動黏附該覆膜並位移而將該覆膜撕離該披覆層。The film removal mechanism includes an adhesive attachment. The adhesive attachment is driven to adhere to the coating and is displaced to tear the coating away from the coating.
本發明的目的及解決先前技術問題還可以採用以下技術手段進一步實現。The object of the present invention and solving the prior art problems can be further achieved by the following technical means.
較佳地,該撕膜裝置的切割單元還包括一輔助該刀具切割該覆膜至預定深度的擋止件,該擋止件與該刀具連動,藉此該刀具在受驅動切割該覆膜時,該擋止件頂抵於該覆膜,使該刀具切割至預定深度。Preferably, the cutting unit of the tear film device further comprises a stopper for assisting the cutter to cut the coating to a predetermined depth, the stopper being interlocked with the cutter, whereby the cutter is driven to cut the coating The stopper abuts against the coating to cut the cutter to a predetermined depth.
較佳地,該擋止件為一滾輪。Preferably, the stopping member is a roller.
較佳地,該晶圓壓膜設備的該撕膜裝置的該刀具切割的預定深度為:該刀具穿過該覆膜並達到該披覆層,但未貫穿該披覆層。Preferably, the cutter of the wafer laminating apparatus has a predetermined depth of cutting of the cutter: the cutter passes through the coating and reaches the coating layer, but does not penetrate the coating layer.
本發明之再一目的,即在提供一種能順利撕除保護膜的撕膜方法。於是,本發明一種將一覆膜自一披覆層撕除的撕膜方法,包含:利用一刀具切割該覆膜並且相對該披覆層位移一距離,以於該覆膜形成一切縫,破壞撕膜時會產生的負壓;及利用一黏附件黏附該覆膜並將該覆膜撕離該披覆層。Still another object of the present invention is to provide a tear film removing method capable of smoothly peeling off a protective film. Thus, the present invention provides a method of tearing a film from a coating layer, comprising: cutting the film with a cutter and displacing a distance relative to the coating layer to form a seam and destroy the film. The negative pressure generated when the film is peeled off; and the adhesive film is adhered by an adhesive attachment and the film is peeled off the coating layer.
較佳地,該撕膜方法適用於一晶圓製程,該刀具切割的預定深度為:該刀具穿過該覆膜並達到該披覆層,但未貫穿該披覆層。Preferably, the tear film method is suitable for a wafer process, the cutter cutting a predetermined depth: the cutter passes through the film and reaches the cover layer, but does not penetrate the cover layer.
本發明之再一目的,即在提供一種能順利撕除保護膜的撕膜方法。於是,本發明一種將一覆膜自一披覆層撕除的撕膜方法,包含:利用一刀具切割該覆膜並且相對該披覆層位移一距離,以於該覆膜形成一切縫,破壞撕膜時會產生的負壓;及利用一黏附件黏附該覆膜並將該覆膜撕離該披覆層。Still another object of the present invention is to provide a tear film removing method capable of smoothly peeling off a protective film. Thus, the present invention provides a method of tearing a film from a coating layer, comprising: cutting the film with a cutter and displacing a distance relative to the coating layer to form a seam and destroy the film. The negative pressure generated when the film is peeled off; and the adhesive film is adhered by an adhesive attachment and the film is peeled off the coating layer.
較佳地,該撕膜方法適用於一晶圓製程,該刀具切割的預定深度為:該刀具穿過該覆膜並達到該披覆層,但未貫穿該披覆層。Preferably, the tear film method is suitable for a wafer process, the cutter cutting a predetermined depth: the cutter passes through the film and reaches the cover layer, but does not penetrate the cover layer.
本發明之功效在於:利用一刀具切割該覆膜並且相對該披覆層位移一距離,以於該覆膜形成一切縫,破壞撕膜時會產生的負壓,再進行撕除覆膜的動作,使撕膜的製程能順利運行。The effect of the invention is that the film is cut by a cutter and displaced by a distance from the coating layer, so that the film forms all the seams, the negative pressure generated when the film is broken, and the action of tearing off the film is performed. The process of tearing film can be operated smoothly.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之較佳實施例的詳細說明中,將可清楚地呈現。The foregoing and other objects, features, and advantages of the invention will be apparent from
參閱圖1、圖2及圖3,本發明晶圓壓膜設備之較佳實施例置適用於一晶圓製程,用以壓膜以及壓膜後將一覆膜5自一披覆層61撕除,該覆膜5例如是保護膜(Mylar),該披覆層61例如是乾式光阻壓膜製程所採用的乾膜。Referring to FIG. 1, FIG. 2 and FIG. 3, a preferred embodiment of the wafer lamination apparatus of the present invention is applied to a wafer process for laminating and laminating a film 5 from a cladding layer 61 after lamination and lamination. In addition, the film 5 is, for example, a protective film (Mylar), which is, for example, a dry film used in a dry photoresist film process.
下文以「在撕膜製程之前的壓膜製程中,已將該覆膜5與披覆層61以熱壓方式施加於晶粒62與承載體63」舉例說明。披覆層61鄰近晶粒62的一側預先塗佈的黏膠7,在熱壓過程溢出致使覆膜5周緣被封閉,此時撕除該覆膜5會產生負壓而不易成功。需要說明的是,由於本發明晶圓壓膜設備適用於多種製程,尤其包含了一種三維積體電路(3D IC)的壓膜製程,三維積體電路即是將多個積體電路加以疊合而成。因此不論是該披覆層61直接壓合黏貼晶圓,或是該披覆層61與該承載體63中間夾晶粒62,均可適用本發明,且該承載體63可以是多種材質,例如不銹鋼、玻璃或晶圓。該披覆層61除了可用來作為光阻蝕刻,也可用於黏著另一層積體電路、晶粒62或是晶圓,也可以單純將其固化而有封閉的功能。Hereinafter, "the film 5 and the coating layer 61 have been applied to the die 62 and the carrier 63 by heat pressing in the film forming process before the tear film process" are exemplified. The pre-coated adhesive 7 of the coating layer 61 adjacent to one side of the die 62 causes the periphery of the film 5 to be closed during the hot pressing process, and the peeling of the film 5 at this time generates a negative pressure and is not easy to succeed. It should be noted that, since the wafer laminating apparatus of the present invention is suitable for various processes, in particular, a three-dimensional integrated circuit (3D IC) lamination process is included, and the three-dimensional integrated circuit is to superimpose a plurality of integrated circuits. Made. Therefore, the present invention can be applied to whether the coating layer 61 directly presses the adhesive wafer, or the die layer 61 and the carrier 63 sandwich the die 62, and the carrier 63 can be of various materials, for example, Stainless steel, glass or wafer. In addition to being used as photoresist etching, the cladding layer 61 can also be used to adhere another layered circuit, the die 62 or the wafer, or it can be simply cured to have a closed function.
本實施例晶圓壓膜設備包含一機台1,及設置在該機台1上的一撕膜裝置10、一支持單元2與一壓膜機構7,該支持單元2支持該披覆層61及該覆膜5。The wafer laminating apparatus of the present embodiment comprises a machine table 1, a tear film device 10 disposed on the machine table 1, a support unit 2 and a lamination mechanism 7, and the support unit 2 supports the coating layer 61. And the film 5.
本發明不以特定壓膜技術為限,下文中針對該壓膜機構7僅說明與本發明技術特徵相關部分,主要是供該覆膜5與披覆層61以熱壓方式施加於被該支持單元2支持的晶粒62與承載體63,該壓膜機構7包括一具有一電熱壓合面711的上腔體71,以利覆膜5與披覆層61熱加壓附著於晶粒62表面。The present invention is not limited to the specific lamination technique. Hereinafter, only the portion related to the technical features of the present invention will be described with respect to the lamination mechanism 7, and mainly, the coating film 5 and the coating layer 61 are applied to the support by hot pressing. The die 62 supported by the unit 2 and the carrier 63, the lamination mechanism 7 includes an upper cavity 71 having an electrothermal pressing surface 711, so that the coating 5 and the coating 61 are thermally pressed and attached to the die 62. surface.
該撕膜裝置10將一覆膜5自一披覆層61撕除,並包含一切割單元3及一覆膜移除機構4。The tear film device 10 tears a film 5 from a coating layer 61 and includes a cutting unit 3 and a film removing mechanism 4.
該切割單元3包括一刀具31及一的擋止件32,在本實施例中,該擋止件32為一滾輪。The cutting unit 3 includes a cutter 31 and a stopper 32. In the embodiment, the stopper 32 is a roller.
該覆膜移除機構4包括一黏附件41及多個轉軸42。該黏附件41捲附於該等轉軸42並受該等轉軸42的轉動及移動所控制,而能接近與遠離該支持單元2以黏附位於該支持單元2上的覆膜5。The film removing mechanism 4 includes an adhesive attachment 41 and a plurality of rotating shafts 42. The adhesive attachment 41 is attached to the rotating shaft 42 and controlled by the rotation and movement of the rotating shaft 42 to be close to and away from the supporting unit 2 for adhering to the coating 5 located on the supporting unit 2.
以下說明利用上述晶圓壓膜設備進行撕膜的方法。A method of tearing the film by the above-described wafer laminating apparatus will be described below.
如圖1所示,撕膜製程運作開始前,使該刀具31的下緣的高度被調整至與該擋止件32的下緣相當。該刀具31在受驅動切割該覆膜5時可如圖3及圖4所示,該擋止件32頂抵於該覆膜5且兩者接觸部微微壓縮,而使該刀具31切割至一受到控制的預定深度一該刀具31穿過該覆膜5並達到該披覆層61,但未達該晶粒62。As shown in FIG. 1, before the start of the tear film process, the height of the lower edge of the cutter 31 is adjusted to be comparable to the lower edge of the stopper 32. When the cutter 31 is driven to cut the film 5, as shown in FIG. 3 and FIG. 4, the stopper 32 abuts against the film 5 and the contact portions thereof are slightly compressed, so that the cutter 31 is cut into one. The predetermined depth to be controlled - the cutter 31 passes through the film 5 and reaches the cladding layer 61, but does not reach the die 62.
參閱圖5及圖6,晶圓壓膜設備的切割單元3開始運作時,該刀具31受驅動而沿該披覆層61平面移動一距離,在該覆膜5切割出一切縫51。藉此,破壞撕膜時會產生的負壓。Referring to FIGS. 5 and 6, when the cutting unit 3 of the wafer laminating apparatus starts to operate, the cutter 31 is driven to move a distance along the plane of the cladding layer 61, and the slit 51 is cut in the coating 5. Thereby, the negative pressure generated when the tear film is broken is broken.
參閱圖7,該支持單元2將已切割的覆膜5,以及披覆層61、晶粒62與承載體63輸送至該覆膜移除機構4,其中一轉軸42受驅動向下位移,使該黏附件41黏附該覆膜5。Referring to FIG. 7, the supporting unit 2 transports the cut film 5, and the covering layer 61, the die 62 and the carrier 63 to the film removing mechanism 4, wherein a rotating shaft 42 is driven to be displaced downward, so that The adhesive attachment 41 adheres to the coating 5.
參閱圖8,前述轉軸42往上移,且該黏附件41與該支持單元2相對位移而將該覆膜5撕離該披覆層61。Referring to FIG. 8, the rotating shaft 42 is moved upward, and the adhesive attachment 41 is displaced relative to the supporting unit 2 to tear the coating film 5 away from the coating layer 61.
參閱圖9,該黏附件41將該覆膜5完整自該披覆層61移除。Referring to FIG. 9, the adhesive attachment 41 completely removes the coating 5 from the cladding layer 61.
參閱圖10,該支持單元2將該披覆層61輸送遠離該覆膜移除機構4,進行後續製程。Referring to FIG. 10, the support unit 2 transports the cladding layer 61 away from the film removal mechanism 4 for subsequent processing.
綜上所述,利用一刀具31切割該覆膜5並且相對該披覆層61位移一距離,以於該覆膜5形成一切縫51,破壞撕膜時會產生的負壓,再進行撕除覆膜5的動作,使撕膜的製程能順利運行,故確實能達成本發明之目的。In summary, the film 5 is cut by a cutter 31 and displaced by a distance relative to the coating layer 61, so that the film 5 forms a slit 51, which destroys the negative pressure generated when the film is peeled off, and then tears off. The action of the film 5 enables the process of the tear film to operate smoothly, so that the object of the present invention can be achieved.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
1...機台1. . . Machine
10...撕膜裝置10. . . Tear film device
2...支持單元2. . . Support unit
3...切割單元3. . . Cutting unit
31...刀具31. . . Tool
32...擋止件32. . . Stopper
4...覆膜移除機構4. . . Film removal mechanism
41...黏附件41. . . Adhesive attachment
42...轉軸42. . . Rotating shaft
5...覆膜5. . . Laminating
51...切縫51. . . Slit
61...披覆層61. . . Cladding layer
62...晶粒62. . . Grain
63...承載體63. . . Carrier
7...壓膜機構7. . . Laminating mechanism
71...上腔體71. . . Upper cavity
711...電熱壓合面711. . . Electric heating surface
圖1 是一前視示意圖,說明本發明晶圓壓膜設備的一較佳實施例;1 is a front elevational view showing a preferred embodiment of the wafer lamination apparatus of the present invention;
圖2 是一立體圖,說明該較佳實施例的部分元件;Figure 2 is a perspective view showing a part of the components of the preferred embodiment;
圖3 是一剖視圖,說明該較佳實施例中,一切割單元切割一覆膜的實施狀態;Figure 3 is a cross-sectional view showing the state in which a cutting unit cuts a film in the preferred embodiment;
圖4 是一側視圖,說明該較佳實施例中,該切割單元切割該覆膜;Figure 4 is a side view showing the cutting unit cutting the film in the preferred embodiment;
圖5 是一圖4的局部放大圖;Figure 5 is a partial enlarged view of Figure 4;
圖6 是一對應於圖5的立體圖;及Figure 6 is a perspective view corresponding to Figure 5; and
圖7 至圖10分別是一側視示意圖,說明該較佳實施例的一覆膜移除機構進行撕膜動作的各階段狀態。7 to 10 are respectively side views showing the state of each stage of the film removing mechanism of the preferred embodiment.
1...機台1. . . Machine
10...撕膜裝置10. . . Tear film device
2...支持單元2. . . Support unit
3...切割單元3. . . Cutting unit
31...刀具31. . . Tool
32...擋止件32. . . Stopper
4...覆膜移除機構4. . . Film removal mechanism
41...黏附件41. . . Adhesive attachment
42...轉軸42. . . Rotating shaft
5...覆膜5. . . Laminating
61...披覆層61. . . Cladding layer
62...晶粒62. . . Grain
63...承載體63. . . Carrier
7...壓膜機構7. . . Laminating mechanism
71...上腔體71. . . Upper cavity
711...電熱壓合面711. . . Electric heating surface
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Cited By (1)
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TWI738049B (en) * | 2019-09-04 | 2021-09-01 | 志聖工業股份有限公司 | Film cutting device, film cutting method, wafer laminating method and wafer laminator |
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TWI738049B (en) * | 2019-09-04 | 2021-09-01 | 志聖工業股份有限公司 | Film cutting device, film cutting method, wafer laminating method and wafer laminator |
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