TW201326871A - A novel composition for radiation imaging detector and a radiation imaging detector comprising the same - Google Patents
A novel composition for radiation imaging detector and a radiation imaging detector comprising the same Download PDFInfo
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- TW201326871A TW201326871A TW101127717A TW101127717A TW201326871A TW 201326871 A TW201326871 A TW 201326871A TW 101127717 A TW101127717 A TW 101127717A TW 101127717 A TW101127717 A TW 101127717A TW 201326871 A TW201326871 A TW 201326871A
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- Taiwan
- Prior art keywords
- imaging detector
- radiation imaging
- composition
- scintillation
- radiation
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- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- RVKZDIDATLDTNR-UHFFFAOYSA-N sulfanylideneeuropium Chemical compound [Eu]=S RVKZDIDATLDTNR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZLBBHFFOCQAKGF-UHFFFAOYSA-N titanium(4+);hydrate Chemical compound O.[Ti+4] ZLBBHFFOCQAKGF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
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Abstract
Description
本發明係有關於用於輻射成像偵知器的新穎組合物,以及具有上述組合物的輻射成像偵知器。 The present invention relates to novel compositions for use in radiation imaging detectors, as well as radiation imaging detectors having the above compositions.
X光輻射的數位成像,是由間接轉換方法將散發在空間中的X光能量先轉換為光後,再使用2維照片偵測器捕捉光的影像,此方法的缺點是光在到達照片偵測器之前就已經散射,因此失去了影像的清晰度。在使用光半導體材料,例如非晶系銫的直接轉換方法具有顯著較高解析度,因為沒有中間的光轉換而沒有光散射的發生。然而,目前這些導光材料的製作複雜且成本高。此外,現今這些商業上成功的材料,非晶系銫的X光吸附係數對40kev以上的 X光能量相對較低。在這種能量以上的醫療成像,需要厚度較厚的銫因而導致製造的複雜度與成本提高。近年已發展出許多有機光導材料(OPC),且成功應用在光學影印機和印表機。然而,大多數OPC材料的分子多半具有低原子數的元素,例如碳、氧、氮、氫或者少量其他較高原子數的元素所構成,但是這些材料的X光吸附系數大多相當低,而不適用於X光成像。 Digital imaging of X-ray radiation is an indirect conversion method that converts the X-ray energy emitted into space into light first, and then uses a 2-dimensional photo detector to capture the image of the light. The disadvantage of this method is that the light arrives at the photo. The detector has been scattered before, thus losing the sharpness of the image. The direct conversion method using an optical semiconductor material, such as an amorphous germanium, has a significantly higher resolution because there is no intermediate light conversion and no light scattering occurs. However, these light guiding materials are currently complicated to manufacture and costly. In addition, today's commercially successful materials, the X-ray adsorption coefficient of amorphous bismuth is above 40 keV. X-ray energy is relatively low. Medical imaging above this energy requires thicker crucibles and thus leads to increased manufacturing complexity and cost. In recent years, many organic photoconductive materials (OPC) have been developed and successfully applied to optical photocopiers and printers. However, most of the molecules of OPC materials have low atomic number elements, such as carbon, oxygen, nitrogen, hydrogen or a small number of other higher atomic number elements, but the X-ray adsorption coefficients of these materials are mostly quite low, but not Suitable for X-ray imaging.
因此亟需要一種X光直接轉換材料,其具有好的X光吸附係數,還有產生與X光能量成比例之電荷的能力。 Therefore, there is a need for an X-ray direct conversion material that has a good X-ray adsorption coefficient and the ability to generate a charge proportional to the X-ray energy.
其中一實施例是針對用於輻射成像偵知器的新穎組合物以及具有該組合物的輻射成像偵知器。上述用於輻射成像偵知器的組合物,包括一含有電荷傳遞材料(CTM)之有機基質;以及用以吸收輻射之閃爍顆粒,其分散於該有機基質中;其中該閃爍顆粒與電荷產生材料接觸。 One of the embodiments is directed to a novel composition for a radiation imaging detector and a radiation imaging detector having the composition. The above composition for a radiation imaging detector includes an organic matrix containing a charge transporting material (CTM); and scintillation particles for absorbing radiation dispersed in the organic matrix; wherein the scintillating particles and the charge generating material contact.
上述與閃爍顆粒接觸之電荷產生材料(CGM)是以與該電荷傳遞材料(CTM)組成混合物的形式存在於該有機基質中。 The above-described charge generating material (CGM) in contact with the scintillation particles is present in the organic matrix in a mixture with the charge transporting material (CTM).
上述閃爍顆粒的表面是部分或全部都塗上電荷產生材料(CGM)。 The surface of the above scintillation particles is partially or entirely coated with a charge generating material (CGM).
上述塗佈於閃爍顆粒表面之電荷產生材料的厚度足以吸收20%發自於閃爍顆粒的光。 The above-mentioned charge generating material coated on the surface of the scintillation particles is thick enough to absorb 20% of the light emitted from the scintillation particles.
上述閃爍顆粒包含至少一種擇自硫氧化釓(GOS)、碘化 銫(CsI)、碘化鈉(NaI)、鍺酸鉍(BGO)、硫化鋅(ZnS)、鎢酸鎘(CdWO4或CWO、閃爍晶體(LYSO Lu1.8Y0.2SiO5(Ce))以及與上述相似還有上述之組合。 The scintillation particles comprise at least one selected from the group consisting of sulphur oxide sulphide (GOS), cesium iodide (CsI), sodium iodide (NaI), bismuth ruthenate (BGO), zinc sulfide (ZnS), cadmium tungstate (CdWO 4 or CWO). A scintillation crystal (LYSO Lu 1.8 Y 0.2 SiO 5 (Ce)) and a combination thereof as described above.
上述閃爍顆粒摻雜包含至少一種擇自銪、鋱、鐠、鋰以及與上述相似還有上述之組合之摻雜劑。 The scintillation particle doping described above comprises at least one dopant selected from the group consisting of ruthenium, osmium, iridium, lithium, and combinations of the foregoing.
上述摻雜之閃爍顆粒的原子光譜是在CGM材料的吸收光譜範圍內。 The atomic spectrum of the above doped scintillation particles is within the absorption spectrum of the CGM material.
上述閃爍顆粒的尺寸小於該輻射成像偵知器的畫素尺寸。 The size of the scintillation particles described above is smaller than the pixel size of the radiation imaging detector.
上述電荷產生材料是至少一種擇自喹啉、吡喀紫質、喹吖酮(quinacridones)、二溴基蒽嵌蒽醌顏料、方酸立鎓(squalilium)染料、二胺基二萘嵌苯、二胺基培瑞酮、多核芳香醌、吡喃鹽(pyrylium salts)、硫代吡喃鹽、偶氮顏料、三苯甲烷類染料、硒、氧化釩花青染料(oxyvanadium phthalocyanine)、鋁酞青素、銅花青、氧鈦青素、氯化鎵花青染料(chlorogallium phthalocyanine)、氫化鎵花青染料(hydroxygallium phthalocyanine)、鎂青素、無金屬青素、靛青色染料以及上述之組合。上述電荷產生材料可單獨使用或兩種及兩種以上組合使用。 The above charge generating material is at least one selected from the group consisting of quinoline, pyridoxine, quinacridones, dibromo-based ruthenium pigment, squalilium dye, diamine-based perylene, Diamine benzoprene, polynuclear aromatic hydrazine, pyrylium salt, thiopyranium salt, azo pigment, triphenylmethane dye, selenium, oxyvanadium phthalocyanine, aluminum indigo , copper cyanine, oxytitanium, chlorogallium phthalocyanine, hydroxygallium phthalocyanine, magnesium oxide, metal-free pigment, indigo dye, and combinations thereof. The above charge generating materials may be used singly or in combination of two or more kinds.
上述電荷傳遞材料是至少一種擇自4,4’-三苯胺二聚物(TPD)、9-二氰甲烯-2,4,7-三硝基芴、N,N’-二(富馬酸二甲酯-1-yl)-N,N’-二(4-甲基-苯基)-聯苯胺、N,N’-二(富馬酸二甲酯-2-yl)-N,N’-二(3-甲基-苯基)-聯苯胺、4,4’-(1,2-聯亞甲基(ethanediylidene))-雙(2,6- 雙甲基-2,5-環己烯-1-酮)、2-(1,1-雙甲基乙基)-4-[3-(1,1-雙甲基乙基)-5-甲基-4-羰基-2,5-環己基-二烯-1-ylidene]-6-甲基-2,5-環己二烯-1-酮、N,N’-二(富馬酸二甲酯-1-yl)-N,N’-二(3-甲基-苯基)-聯苯胺、聚(3-辛基噻吩(octylthiophene)-2,5-diyl)、聚(3-癸基噻吩(decylthiophene)-2,5-diyl)、N-雙苯基yl-N-苯基-N-(3-甲基苯基)-胺、4-N,N-雙(4-甲基苯基)-氨基-苯甲醛-N,N’-二苯基腙(hydrazone)、p-二苯基胺苯甲醛-N-苯基-甲基-腙、N,N’-二苯基-N,N’-雙(3-羥苯基)-1,1’-二苯基-4,4’-雙胺、N,N’-雙苯基-N,N’-雙(3-甲基苯基)-1,1’-二苯基-4,4’-雙胺、N,N,N’N’-四(4-甲基苯基)-(1,1’-雙苯基)-4,4’-雙胺、4,4’-(3,4-雙甲基苯基氮烷diyl)雙(4,1-苯)雙甲烷、N,N’-雙(3-甲基苯基)-N,N’-雙(4-n-丁苯基)-1,1’-三聯苯-4,4’-雙胺以及上述之組合。上述電荷傳遞材料可單獨使用或兩種及兩種以上組合使用。 The above charge transporting material is at least one selected from the group consisting of 4,4'-triphenylamine dimer (TPD), 9-dicyanocarbene-2,4,7-trinitroguanidine, N,N'-di (Fuma) Dimethyl ketone-1-yl)-N,N'-bis(4-methyl-phenyl)-benzidine, N,N'-di(dimethyl fumarate-2-yl)-N, N'-bis(3-methyl-phenyl)-benzidine, 4,4'-(1,2- ethanediylidene)-bis(2,6- Dimethyl-2,5-cyclohexen-1-one), 2-(1,1-bismethylethyl)-4-[3-(1,1-bismethylethyl)-5- Methyl-4-carbonyl-2,5-cyclohexyl-diene-1-ylidene]-6-methyl-2,5-cyclohexadien-1-one, N,N'-di (fumaric acid) Dimethyl-1-yl)-N,N'-bis(3-methyl-phenyl)-benzidine, poly(3-octylthiophene-2,5-diyl), poly(3- Decylthiophene-2,5-diyl), N-bisphenylyl-N-phenyl-N-(3-methylphenyl)-amine, 4-N,N-bis(4-A Phenyl)-amino-benzaldehyde-N,N'-diphenyl hydrazone, p-diphenylamine benzaldehyde-N-phenyl-methyl-hydrazine, N,N'-diphenyl -N,N'-bis(3-hydroxyphenyl)-1,1'-diphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3- Methylphenyl)-1,1'-diphenyl-4,4'-diamine, N,N,N'N'-tetrakis(4-methylphenyl)-(1,1'-bisbenzene -4,4'-diamine, 4,4'-(3,4-bismethylphenylazane diyl) bis(4,1-benzene)dimethane, N,N'-bis(3- Methylphenyl)-N,N'-bis(4-n-butylphenyl)-1,1'-terphenyl-4,4'-diamine and combinations thereof. The above charge transporting materials may be used singly or in combination of two or more kinds.
CGM對CTM的重量比率為約1:99至95:5。 The weight ratio of CGM to CTM is from about 1:99 to 95:5.
閃爍顆粒的平均粒徑是在約1至100μm的範圍。 The average particle diameter of the scintillation particles is in the range of about 1 to 100 μm.
閃爍顆粒在混合物中的重量比例是約10vol%至約95vol%。 The weight ratio of scintillation particles in the mixture is from about 10 vol% to about 95 vol%.
輻射是至少一種擇自由X光、γ射線以及游離輻射所組成之群組。 Radiation is a group of at least one selected X-ray, gamma-ray, and free radiation.
上述組合物是具有厚度約5μm至2000μm之厚度的薄層。 The above composition is a thin layer having a thickness of about 5 μm to 2000 μm.
上述閃爍顆粒可分散在有機基質層。 The scintillation particles described above may be dispersed in the organic matrix layer.
上述薄層可沉積在影像電荷收集裝置之上。 The thin layer described above can be deposited on the image charge collection device.
另一實施例是針對具有上述組合物的輻射成像偵知器。 Another embodiment is directed to a radiation imaging detector having the above composition.
上述組合物可帶有靜電電荷。 The above composition may be electrostatically charged.
上述靜電電荷能以擇自X光、γ射線以及游離輻射的輻射而放電。 The above electrostatic charge can be discharged by radiation selected from X-rays, gamma rays, and free radiation.
上述靜電電荷被記錄而形成輻射影像。 The above electrostatic charge is recorded to form a radiation image.
另一實施例則針對製作用於輻射成像偵知器之組合物的方法。上述方法包括塗佈電荷產生材料(CGM)於閃爍顆粒的表面;以及將該塗佈電荷產生材料的閃爍顆粒分散在含有電荷傳遞材料(CTM)的有機基質中。 Another embodiment is directed to a method of making a composition for a radiation imaging detector. The above method includes coating a charge generating material (CGM) on a surface of the scintillation particle; and dispersing the scintillation particle of the coated charge generating material in an organic matrix containing a charge transporting material (CTM).
另一實施例中,製作用於輻射成像偵知器的組成物的方法,其包括:混合電荷產生材料(CGM)與電荷傳遞材料(CTM)為有機基質;以及將閃爍顆粒分散至該有機基質中。 In another embodiment, a method of fabricating a composition for a radiation imaging detector includes: mixing a charge generating material (CGM) and a charge transporting material (CTM) as an organic matrix; and dispersing scintillating particles to the organic matrix in.
上述本發明之特徵透過更詳細的說明結合下列圖示將更為清楚。 The above-described features of the present invention will become more apparent from the following detailed description.
以下將更詳細說明本發明,實施例的部分將節錄於此,而不是所有的實施例。事實上,本發明可在不同形式做變化,不限定於下列實施例,下列揭露之實施例僅用來滿足法律上申請的必要條件。 The invention will be described in more detail below, and portions of the embodiments will be described herein instead of all embodiments. In fact, the invention may be varied in various forms, and is not limited to the following examples, and the following disclosed embodiments are only used to satisfy the requirements of the legal application.
以下將對照所附圖示更詳細說明本發明,然而這些實 施例可以不同形式進行,而不限定於下列的描述。下述之實施例是為了更完整仔細的揭露發明內容,而能夠向熟習此技術的人士完整表達發明的範圍。 The invention will be described in more detail below with reference to the accompanying drawings, however these The examples can be made in different forms and are not limited to the following description. The embodiments described below are intended to provide a complete and complete disclosure of the invention, and the scope of the invention can be fully described by those skilled in the art.
在圖示中,薄層以及區域的尺寸有增大用以更清楚描繪出內容。此外,當薄層或元件是在其他薄層或基材之上,該薄層可能是直接在另一薄層或基材上,也有可能有其他層在其中間。反之亦然,薄層在另一薄層之下,有可能薄層直接在另一薄層之下,或者在這兩層薄層中間可能有多層中間層在其中。此外,當一薄層在兩層中間時,該薄層有可能是上述兩層中唯一的一層,或者會有一個層或多層在其中。在說明中相同號碼代表著相同的元件。 In the illustration, the dimensions of the thin layers and regions are increased to more clearly depict the content. Moreover, when the layer or element is on top of other layers or substrates, the layer may be directly on another layer or substrate, and other layers may be in between. Vice versa, the thin layer is under another thin layer, it is possible that the thin layer is directly under another thin layer, or there may be multiple intermediate layers in between the two thin layers. Further, when a thin layer is in the middle of the two layers, the thin layer may be the only one of the above two layers, or there may be one or more layers in it. The same numbers in the description represent the same elements.
在此省略對熟習此技藝者即明顯易懂的部分,以求精簡。 The parts that are apparently understandable to those skilled in the art are omitted here for the sake of streamlining.
實施例是針對用於輻射成像偵知器的組合物。上述組合物包括用以吸收輻射之閃爍顆粒;以及一含有電荷傳遞材料(CTM)之有機基質,該閃爍顆粒分散於該有機基質中。 Embodiments are directed to compositions for use in radiation imaging detectors. The above composition includes scintillation particles for absorbing radiation; and an organic matrix containing a charge transporting material (CTM) dispersed in the organic matrix.
上述閃爍顆粒與電荷產生材料(CGM)接觸。例如,上述閃爍顆粒的表面是部分或全部都塗上電荷產生材料(CGM)。 The scintillation particles are in contact with a charge generating material (CGM). For example, the surface of the above scintillation particles is partially or entirely coated with a charge generating material (CGM).
這裡所謂的”接觸”是指閃爍顆粒與電荷產生材料(CGM)互相緊密接觸的狀態。在一實施例中,電荷產生材料(CGM)包圍整個閃爍顆粒的表面。另一實施例,閃爍顆粒的部份表面則塗佈電產生材料。再另一實施例,閃爍顆粒能與電荷產生材料存在於一混合物中而接觸,上述電荷傳遞材料在有機基質中。 The term "contact" as used herein refers to a state in which the scintillation particles and the charge generating material (CGM) are in close contact with each other. In an embodiment, a charge generating material (CGM) surrounds the surface of the entire scintillating particle. In another embodiment, a portion of the surface of the scintillating particles is coated with an electrically generated material. In still another embodiment, the scintillating particles can be contacted with a charge generating material in a mixture, the charge transporting material being in the organic matrix.
閃爍顆粒可分散於連續狀態的有機基質中。 The scintillation particles can be dispersed in a continuous organic matrix.
第1圖係繪示根據本發明之實施例的混合物。如第1圖所示,閃爍顆粒10分散於有機基質20中。 Figure 1 depicts a mixture in accordance with an embodiment of the present invention. As shown in Fig. 1, the scintillation particles 10 are dispersed in the organic matrix 20.
第2圖係繪示根據一實施例的輻射轉換層。如第2圖所示,閃爍顆粒10是塗佈有電荷產生材料(CGM)21,而塗佈的閃爍顆粒分散於有機基質20中。 Figure 2 illustrates a radiation conversion layer in accordance with an embodiment. As shown in FIG. 2, the scintillation particles 10 are coated with a charge generating material (CGM) 21, and the coated scintillation particles are dispersed in the organic matrix 20.
閃爍顆粒吸收輻射且產生強度與吸收的能量成比例的光波。具有高原子數的閃爍顆粒能有效吸收高輻射能量,而為較佳的選擇。 The scintillation particles absorb radiation and produce light waves whose intensity is proportional to the absorbed energy. A scintillation particle having a high atomic number can effectively absorb high radiant energy, which is a preferred choice.
閃爍顆粒包括,但不限於硫氧化釓(GOS)、碘化銫(CsI)、碘化鈉(NaI)、鍺酸鉍(BGO)、硫化鋅(ZnS)、鎢酸鎘(CdWO4或CWO、閃爍晶體(LYSO Lu1.8Y0.2SiO5(Ce))。上述閃爍顆粒可單獨使用,亦可組合兩者或以上使用之。其中較佳是硫氧化釓(GOS)。 Scintillation particles include, but are not limited to, sulphur oxide sulphide (GOS), cesium iodide (CsI), sodium iodide (NaI), bismuth ruthenate (BGO), zinc sulfide (ZnS), cadmium tungstate (CdWO 4 or CWO, A scintillation crystal (LYSO Lu 1.8 Y 0.2 SiO 5 (Ce)). The above scintillation particles may be used singly or in combination of two or more. Among them, bismuth oxysulfide (GOS) is preferred.
閃爍顆粒的尺寸小於輻射成像偵知器的畫素尺寸。例如,閃爍顆粒的平均粒徑在約1至100μm的範圍,如3至50μm。在上述範圍內,組合物能提供輻射成性偵知器良好的解析度以及低雜訊。 The size of the scintillation particles is smaller than the pixel size of the radiation imaging detector. For example, the scintillation particles have an average particle diameter in the range of about 1 to 100 μm, such as 3 to 50 μm. Within the above range, the composition can provide a good resolution of the radiation-sensing detector and low noise.
在一實施例中,閃爍顆粒能塗有摻雜劑。摻雜劑包括,但不限於銪(Eu)、鋱(Tb)、鐠(Pr)、以及鋰(Li)。這些摻雜劑可單獨使用亦可兩者或以上組合使用。每個閃爍顆粒的閃爍光譜因不同摻雜劑而有所不同,可配合電荷產生材料的吸收光譜選擇適當者使用。例如,摻雜之閃爍顆粒的原子光譜是在電荷產生材料(CGM)的原子光譜中。在一實施 例中,閃爍顆粒為硫氧化釓(GOS),而電荷產生材料(CGM)是花青染料(phthalocyanine)類化合物,摻雜劑則擇自Eu,因為Eu摻雜的閃爍顆粒的原子光譜與花青染料類電荷產生材料(CGM)的吸收光譜相合。 In an embodiment, the scintillation particles can be coated with a dopant. Dopants include, but are not limited to, europium (Eu), thallium (Tb), praseodymium (Pr), and lithium (Li). These dopants may be used singly or in combination of two or more. The scintillation spectrum of each scintillation particle varies depending on the dopant, and may be selected in accordance with the absorption spectrum of the charge generating material. For example, the atomic spectrum of the doped scintillation particles is in the atomic spectrum of the charge generating material (CGM). In one implementation In the example, the scintillation particles are bismuth oxysulfide (GOS), and the charge generating material (CGM) is a phthalocyanine compound, and the dopant is selected from Eu because of the atomic spectrum and flower of the Eu-doped scintillation particles. The absorption spectrum of the cyan dye-based charge generating material (CGM) is matched.
當電荷產生材料塗佈在閃爍顆粒上時,電荷產生材料塗佈於閃爍顆粒上的厚度可能足夠吸收大於約20%,較佳是30%或更多的閃爍顆粒散發的閃爍光。 When the charge generating material is coated on the scintillation particles, the thickness of the charge generating material coated on the scintillation particles may be sufficient to absorb more than about 20%, preferably 30% or more, of the scintillation light emitted by the scintillation particles.
電荷產生材料包括,但不限於喹啉、吡喀紫質、喹吖酮、二溴基蒽嵌蒽醌顏料、方酸立鎓染料、二胺基二萘嵌苯、二胺基培瑞酮、多核芳香醌、吡喃鹽、硫代吡喃鹽、偶氮顏料、三苯甲烷類染料、硒、氧化釩花青染料、鋁酞青素、銅花青、氧鈦青素、氯化鎵花青染料、氫化鎵花青染料、鎂青素、無金屬青素、靛青色染料。上述電荷產生材料可單獨使用,亦可兩種或兩種以上組合使用。例如2,9-二苄(Dibenzyl)-蒽(anthra)[2,1,9-def:6,5,10-d’e’f’]雙異喹啉(diisoquinoline)-1,3,8,10-四酮、花青染料鐵(II)錯化合物、8,9,18,19-四氯-二苯並咪唑(2,1-a:1’,2’-b’)蒽(2,1,9-def:6,5,10,d’e’f’)雙異喹啉-6,16-二酮(與順式異構物之混合物)、5,10,15,20-四苯基卟吩氧釩(IV)化物、2,9-二(十三基-7-yl)-蒽[2,1,9-def:6,5,10-d’e’f’]雙異喹啉-1,3,8,10-四酮、2,9-Di(pent-3-yl)-蒽[2,1,9-def:6,5,10-d’e’f’]雙異喹啉-1,3,8,10-四酮、2,9-二苄-5,6,12,13-四氯-蒽 (2,1,9-def:6,5,10-d’e’f’)雙異喹啉-1,3,8,10-四酮、2,9-二丙基-5,6,12,13-四氯-蒽(2,1,9-def:6,5,10-d’e’f’)雙異喹啉-1,3,8,10-四酮、2,9-二甲基-5,6,12,13-四氯-蒽(2,1,9-def:6,5,10-d’e’f’)雙異喹啉-1,3,8,10-四酮、2,9-二苄-5,6,12,13-四氯-蒽(2,1,9-def:6,5,10-d’e’f’)雙異喹啉-1,3,8,10-四酮、花青染料鉛錯化合物、鈦氧(IV)花青染料鈦氧、與2%之混有2%的BM5聚乙烯醛縮丁醛(Polyvinylbutyral)黏結劑的96% 1,3-二氧戊環(dioxolane),1-(4-雙甲基胺基苯基)-3-(4-雙甲基氨環己-2,5-二烯-1-ylidene)-2-羰基環丁-4-olate、銦(III)花青染料氯化物、1-(2,5-二甲基-吡咯(pyrrol)-3-yl)-3-(2,5-二甲基-吡咯鎓-3-ylidene)-環丁-2-酮-4-olate、1-(1-芐基(Benzyl)-喹啉-4-ylidene甲基)-3-(1-芐基-喹啉鎓-4-yl-甲烯)2-氧代-環己烯-4-olate、5,10,15,20-四苯基卟吩(無金屬)、1-(4-二甲基氨-2-氫氧基-苯基)-3-(4-二甲基胺-2-氫氧基-環己-2,5-二烯-1-ylidene)-2-氧代-環己-4-olate、二苯並咪唑[2,1-a:2’,1’-a’]蒽[2,1,9-def:6,5,10-d’e’f’]雙異喹啉-10-21-二酮(與順式異構物之混合物)、氧化鈦(IV)花青染料、5,10,15,20-四苯基卟吩鈷(II)、1-(3,5-二甲基-4-乙基-吡咯-2-yl)-3-(3,5-二甲基-4-乙基-吡咯鎓-2-ylidene)-環丁-2-酮-4-olate、聯咪唑[2,1-a:2’,1’]蒽 [2,1,9-def:6,5,10-d’e’f’]雙異喹啉-二酮(與順式異構物之混合物)、2,9-Di(2-甲氧乙基)-蒽[2,1,9-def:6,5,10-d’e’f’]雙異喹啉-1,3,8-10-四酮、氯化鐵(III)四苯基卟吩、亞洛立鎓(Azulenylium)、二氫-3-[2-氫氧-3-(5-異丙基-3,8-二甲基-1.亞洛連基(azulenyl))-4-oxo-2-環丁-1-ylidene]-7-異丙基-1,4-二甲基、氧化物等等。 The charge generating materials include, but are not limited to, quinoline, pyridoxine, quinophthalone, dibromo-based ruthenium pigment, squarylium ruthenium dye, diamino perylene, diamino risprene, Polynuclear aromatic hydrazine, pyranium salt, thiopyranium salt, azo pigment, triphenylmethane dye, selenium, vanadium oxide cyanine dye, aluminum anthracycline, copper cyanine, oxytitanium, gallium chloride flower Cyan dye, gallium hydride cyanine dye, magenta, no metal blue pigment, indigo dye. The above charge generating materials may be used singly or in combination of two or more kinds. For example, 2,9-dibenzyl-anthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8 , 10-tetraketone, cyanine dye iron (II) wrong compound, 8,9,18,19-tetrachloro-dibenzimidazole (2,1-a:1',2'-b')蒽(2 ,1,9-def:6,5,10,d'e'f')bisisoquinoline-6,16-dione (mixture with cis isomer), 5,10,15,20- Tetraphenylporphine vanadyl (IV) compound, 2,9-di(tridecyl-7-yl)-indole [2,1,9-def:6,5,10-d'e'f'] Bis-isoquinoline-1,3,8,10-tetraketone, 2,9-Di(pent-3-yl)-oxime [2,1,9-def:6,5,10-d'e'f ']bisisoquinoline-1,3,8,10-tetraketone, 2,9-dibenzyl-5,6,12,13-tetrachloro-indole (2,1,9-def:6,5,10-d'e'f') bisisoquinoline-1,3,8,10-tetraketone, 2,9-dipropyl-5,6, 12,13-tetrachloro-indole (2,1,9-def:6,5,10-d'e'f') bisisoquinoline-1,3,8,10-tetraone, 2,9- Dimethyl-5,6,12,13-tetrachloro-indole (2,1,9-def:6,5,10-d'e'f') bisisoquinoline-1,3,8,10 -tetraketone, 2,9-dibenzyl-5,6,12,13-tetrachloro-indole (2,1,9-def:6,5,10-d'e'f')bisisoquinoline- 1,3,8,10-tetraketone, cyanine dye lead compound, titanium oxygen (IV) cyanine dye titanium oxygen, and 2% mixed with 2% BM5 polyvinyl butyral (Polyvinyl butyral) binder 96% 1,3-dioxolane, 1-(4-bismethylaminophenyl)-3-(4-bismethylaminocyclohexane-2,5-diene-1- Ylidene)-2-carbonylcyclobut-4-olate, indium(III) cyanine dye chloride, 1-(2,5-dimethyl-pyrrol-3-yl)-3-(2,5 -Dimethyl-pyrrole-3-ylidene)-cyclobutan-2-one-4-olate, 1-(1-benzyl(Benzyl)-quinoline-4-ylidenemethyl)-3-(1- Benzyl-quinolinium-4-yl-mene) 2-oxo-cyclohexene-4-olate, 5,10,15,20-tetraphenyl porphin (metal-free), 1-(4- Dimethylamino-2-hydroxyoxy-phenyl)-3-(4-dimethylamine-2-hydroxyoxy-cyclohexan-2,5-diene-1-ylidene)-2- -cyclohex-4-olate, dibenzimidazole [2,1-a:2',1'-a']蒽[2,1,9-def:6,5,10-d'e'f ']bisisoquinoline-10-21-dione (mixture with cis isomer), titanium oxide (IV) cyanine dye, 5,10,15,20-tetraphenylporphin cobalt (II) ,1-(3,5-Dimethyl-4-ethyl-pyrrole-2-yl)-3-(3,5-dimethyl-4-ethyl-pyrrole-2-ylidene)-cyclobutane 2-keto-4-olate, biimidazole [2,1-a:2',1']蒽 [2,1,9-def:6,5,10-d'e'f']bisisoquinoline-dione (mixture with cis isomer), 2,9-Di(2-methoxy Ethyl)-indole [2,1,9-def:6,5,10-d'e'f']bisisoquinoline-1,3,8-10-tetraone, iron(III) chloride Phenyl porphin, Azulenylium, dihydro-3-[2-hydroxo-3-(5-isopropyl-3,8-dimethyl-1.azulenyl) )-4-oxo-2-cyclobutan-1-ylidene]-7-isopropyl-1,4-dimethyl, oxide, and the like.
上述有機基質是包含電荷傳遞材料的有機光導體材料(OPC)。在一實施例中,有機基質為電荷傳遞材料。在其他實施例,有機基質可為電荷產生材料(CGM)與電荷傳遞材料(CTM)的混合物。 The above organic matrix is an organic photoconductor material (OPC) comprising a charge transport material. In an embodiment, the organic matrix is a charge transport material. In other embodiments, the organic matrix can be a mixture of charge generating material (CGM) and charge transporting material (CTM).
電荷產生材料(CGM)在有機基質中能與電荷傳遞材料(CGM)有電性接觸。 The charge generating material (CGM) is in electrical contact with the charge transport material (CGM) in the organic matrix.
電荷傳遞材料包括有,但不限於4,4’-三苯胺二聚物(TPD)、9-二氰甲烯-2,4,7-三硝基芴、N,N’-二(富馬酸二甲酯-1-yl)-N,N’-二(4-甲基-苯基)-聯苯胺、N,N’-二(富馬酸二甲酯-2-yl)-N,N’-二(3-甲基-苯基)-聯苯胺、4,4’-(1,2-聯亞甲基)-雙(2,6-雙甲基-2,5-環己烯-1-酮)、2-(1,1-雙甲基乙基)-4-[3-(1,1-雙甲基乙基)-5-甲基-4-羰基-2,5-環己基-二烯-1-ylidene]-6-甲基-2,5-環己二烯-1-酮、N,N’-二(富馬酸二甲酯-1-yl)-N,N’-二(3-甲基-苯基)-聯苯胺、聚(3-辛基噻吩-2,5-diyl)、聚(3-癸基噻吩-2,5-diyl)、N-雙苯基yl-N-苯基-N-(3-甲基苯基)-胺、4-N,N-雙(4-甲基苯基)-氨基-苯甲醛-N,N’-二苯 基腙、p-二苯基胺苯甲醛-N-苯基-甲基-腙、N,N’-二苯基-N,N’-雙(3-羥苯基)-1,1’-二苯基-4,4’-雙胺、N,N’-雙苯基-N,N’-雙(3-甲基苯基)-1,1’-二苯基-4,4’-雙胺、N,N,N’N’-四(4-甲基苯基)-(1,1’-雙苯基)-4,4’-雙胺、4,4’-(3,4-雙甲基苯基氮烷diyl)雙(4,1-苯)雙甲烷、N,N’-雙(3-甲基苯基)-N,N’-雙(4-n-丁苯基)-1,1’-三聯苯-4,4’-雙胺。上述電荷傳遞材料能單獨使用,亦可使用兩者或兩者以上之組合。 Charge transfer materials include, but are not limited to, 4,4'-triphenylamine dimer (TPD), 9-dicyanomethyl-2,4,7-trinitroguanidine, N,N'-di (Fuma) Dimethyl ketone-1-yl)-N,N'-bis(4-methyl-phenyl)-benzidine, N,N'-di(dimethyl fumarate-2-yl)-N, N'-bis(3-methyl-phenyl)-benzidine, 4,4'-(1,2-bimethylidene)-bis(2,6-bismethyl-2,5-cyclohexene 1-ketone), 2-(1,1-bismethylethyl)-4-[3-(1,1-bismethylethyl)-5-methyl-4-carbonyl-2,5- Cyclohexyl-diene-1-ylidene]-6-methyl-2,5-cyclohexadien-1-one, N,N'-di(dimethyl fumarate-1-yl)-N, N'-bis(3-methyl-phenyl)-benzidine, poly(3-octylthiophene-2,5-diyl), poly(3-mercaptothiophene-2,5-diyl), N-double Phenyl yl-N-phenyl-N-(3-methylphenyl)-amine, 4-N,N-bis(4-methylphenyl)-amino-benzaldehyde-N,N'-diphenyl Base, p-diphenylamine benzaldehyde-N-phenyl-methyl-indole, N,N'-diphenyl-N,N'-bis(3-hydroxyphenyl)-1,1'- Diphenyl-4,4'-diamine, N,N'-bisphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'- Diamine, N,N,N'N'-tetrakis(4-methylphenyl)-(1,1'-diphenyl)-4,4'-diamine, 4,4'-(3,4 - bismethylphenylazane diyl) bis(4,1-benzene)dimethane, N,N'-bis(3-methylphenyl)-N,N'-bis(4-n-butylphenyl) )-1,1'-terphenyl-4,4'-diamine. The above charge transporting materials may be used singly or in combination of two or more.
CGM對CTM的重量比約為1:99至95:5,如10:90至80:20。在上述範圍內,該層能提供輻射成像偵知器好的解析度以及低雜訊。在一實施例中,CGM與CTM的重量比為約30:70至70:30。 The weight ratio of CGM to CTM is from about 1:99 to 95:5, such as from 10:90 to 80:20. Within the above range, the layer can provide a good resolution of the radiation imaging detector and low noise. In one embodiment, the weight ratio of CGM to CTM is from about 30:70 to 70:30.
閃爍顆粒在有機基質的體積比例為約10 vol%至95 vol%,例如約15 vol%至80 vol%。在上述範圍,組合物能提供輻射成像偵知器好的解析度與低雜訊。例如,閃爍顆粒在有機基質的體積比例為約20 vol%至65 vol%。 The volume fraction of scintillation particles in the organic matrix is from about 10 vol% to 95 vol%, such as from about 15 vol% to 80 vol%. In the above range, the composition can provide a good resolution and low noise of the radiation imaging detector. For example, the volume fraction of scintillation particles in the organic matrix is from about 20 vol% to 65 vol%.
另一實施例則為用於輻射成像偵知器使用之混合物的製造方法。上述方法包括塗佈電荷產生材料(CGM)於閃爍顆粒的表面;以及將該塗佈電荷產生材料的閃爍顆粒分散在含有電荷傳遞材料(CTM)的有機基質中。 Another embodiment is a method of making a mixture for use with a radiation imaging detector. The above method includes coating a charge generating material (CGM) on a surface of the scintillation particle; and dispersing the scintillation particle of the coated charge generating material in an organic matrix containing a charge transporting material (CTM).
再另一實施例,上述方法包括混合電荷產生材料(CGM)與電荷傳遞材料(CTM)為有機基質;以及將閃爍顆粒分散至該有機基質中。 In still another embodiment, the above method includes mixing a charge generating material (CGM) and a charge transporting material (CTM) into an organic matrix; and dispersing the scintillating particles into the organic matrix.
上述有機基質中可加入樹脂黏結劑。樹脂黏結劑的範 例包括,但不限於苯乙烯基樹脂、聚烯烴、丙烯醛基樹脂、醋酸乙烯酯基樹脂、環氧樹脂、聚胺基甲酸乙酯樹脂、酚樹脂、聚酯樹脂、醇酸聚酯樹脂、聚碳酸酯樹脂、矽樹脂、三聚氰胺樹脂等等。 A resin binder may be added to the above organic matrix. Specification of resin binder Examples include, but are not limited to, styrene-based resins, polyolefins, acrolein-based resins, vinyl acetate-based resins, epoxy resins, polyurethane resins, phenol resins, polyester resins, alkyd polyester resins, Polycarbonate resin, enamel resin, melamine resin, and the like.
上述樹脂黏結劑可溶解於芳香烴溶劑,例如酒精、二氯甲烷、1,2-二氯乙烷、甲乙酮、環己烷、醋酸乙酯、丁酸丁酯、甲氧基乙醇醚、乙氧基乙醇醚、四氫呋喃、1,4-二氧陸圜、吡啶、二乙基胺等等的溶劑。 The above resin binder can be dissolved in an aromatic hydrocarbon solvent such as alcohol, dichloromethane, 1,2-dichloroethane, methyl ethyl ketone, cyclohexane, ethyl acetate, butyl butyrate, methoxyethanol ether, ethoxylate. A solvent such as glycol ether, tetrahydrofuran, 1,4-dioxane, pyridine, diethylamine or the like.
將閃爍顆粒分散於有機基質的方式可用超音波擴散裝置、球磨機、砂磨機或均質混合機。 The manner in which the scintillation particles are dispersed in the organic matrix can be carried out by means of an ultrasonic diffusion device, a ball mill, a sand mill or a homomixer.
另一實施例是使用上述組合物之輻射成像偵知器。 Another embodiment is a radiation imaging detector using the above composition.
上述輻射是一擇自由X光、γ射線以及游離輻射所組成之群組的輻射。游離輻射可包括所有能穿透材料的輻射,而製造光於閃爍顆粒。例如游離輻射可包括α射線、β射線、中子等等。 The above radiation is radiation of a group consisting of free X-rays, gamma rays, and free radiation. Free radiation can include all of the radiation that can penetrate the material, while producing light to the scintillation particles. For example, free radiation can include alpha rays, beta rays, neutrons, and the like.
有機基質可為薄層的形式。塗佈有電荷產生材料(CGM)的閃爍顆粒可分散在有機基質層中。上述薄層的厚度約為5μm至約2000μm,如約10μm至約1000μm。 The organic matrix can be in the form of a thin layer. Scintillation particles coated with a charge generating material (CGM) may be dispersed in the organic matrix layer. The above thin layer has a thickness of from about 5 μm to about 2000 μm, such as from about 10 μm to about 1000 μm.
上述分散有閃爍顆粒的有機基質薄層可做為輻射成像偵知器。上述薄層可沉積在影像電荷收集裝置(image charge collection device)。 The above thin organic layer with scintillation particles can be used as a radiation imaging detector. The thin layer can be deposited on an image charge collection device.
在被閃爍顆粒的輻射吸收時,產生的閃爍光馬上被鄰近CGM材料所吸收,在位置上被轉換成電荷。在施加偏壓的電場中,上述電荷被基質中的CTM材料分開且傳遞到上 和下介面,且被如薄膜電晶體(TFT)陣列之成像系統的畫素電極收集。 Upon absorption by the radiation of the scintillation particles, the resulting scintillation light is immediately absorbed by the adjacent CGM material and converted into an electrical charge at the location. In the electric field to which the bias is applied, the above charge is separated by the CTM material in the matrix and transferred to the upper And the lower interface, and are collected by the pixel electrodes of an imaging system such as a thin film transistor (TFT) array.
閃爍顆粒衰退時間與餘輝特性也可選擇以配合成像系統的需求,例如成像畫面更新率(frame rate)、曝光累積時間(image integration time)等等。在一實施例中,以花青染料為基底的CGM材料的光吸收係數可配合摻雜銪的硫氧化釓(Europium doped GOS)的閃爍光譜。 The flicker particle decay time and afterglow characteristics can also be selected to match the needs of the imaging system, such as imaging frame rate, image integration time, and the like. In one embodiment, the light absorption coefficient of the CGM material based on the cyanine dye can be matched to the scintillation spectrum of the europium-doped europium sulphide (Europium doped GOS).
閃爍光可在非常短的瞬間(如0.01~10微米)被周圍的CGM材料吸收,CGM隨即在輻射被吸收的地方於閃爍顆粒附近產生電荷。 The scintillation light can be absorbed by the surrounding CGM material at very short instants (eg, 0.01 to 10 microns), and the CGM then generates a charge near the scintillation particles where the radiation is absorbed.
傳統閃爍成像偵知器的閃爍光,在到達感光二極體之電荷裝置的光之前需要經過通常為數百微米長的距離。在這長光程中,傳統閃爍成像偵知器的閃爍光在閃爍材料內部會進行許多散射,導致影像清晰度惡化。 The scintillation light of a conventional scintillation image detector requires a distance of typically several hundred microns long before reaching the light of the charge device of the photodiode. In this long path of light, the scintillation light of the conventional scintillation image detector scatters a lot inside the scintillation material, resulting in deterioration of image sharpness.
另一方面,本發明之組合物能在光大量散射之前,局部性轉換閃爍光為電荷。電荷即被CTM材料內的電場導向相對應的影像充電電極,而維持高的空間影像解析度。根據本發明之輻射影像偵知器而得之影像品質,能與直接轉換半導體,例如硒而產生的相提並論。除了高影像空間品質,本發明之組合物的輻射吸收效率可擇自大範圍之具有不同原子數以及顆粒尺寸的閃爍材料。 In another aspect, the compositions of the present invention are capable of locally converting scintillation light into a charge prior to substantial scattering of light. The charge is directed by the electric field within the CTM material to the corresponding image charging electrode while maintaining high spatial image resolution. The image quality obtained by the radiation image detector of the present invention can be compared with that produced by directly converting a semiconductor such as selenium. In addition to high image space quality, the radiation absorption efficiency of the compositions of the present invention can be selected from a wide range of scintillation materials having different atomic numbers and particle sizes.
本發明之組合物能塗佈在例如薄膜電晶體(TFT)之帶電判讀系統,而形成類似Lee et al.於1994年6月7日所獲得之美國專利No.5,319,206揭露之TFT陣列的輻射轉 換器,上述專利之完整內容包括於本專利申請之參考文件中。在輻射轉換器之上可再沉積上電極。在上電極與TFT電流回流平面之間可施加偏壓,產生一致電場於輻射轉換器層中。在成像過程,衝擊輻射(impinging radiation)穿過如人體的物體,可被輻射轉換層中的組合物吸收,產生與被吸收輻射能量的強度成比例的光。大部分的閃爍光會被周圍CGM吸收,因此產生與閃爍強度成比例的電子-電洞對(electron-hole pairs)電荷。在施加偏壓的電場中,同極性的電荷會被驅動往偏向電極。這樣的結構相似於美國專利5,319,206所描述之帶有電荷轉換硒層之如硒偵知器的直接轉換輻射成像偵知器。由於大部分光會被CGM塗層或緊鄰閃爍材料所吸收,過程中輻射吸收產生的電荷就在輻射吸收材料的位置。在偏壓電場中,藉由小於閃爍顆粒尺寸的展開,其可能遠小於TFT畫素尺寸的輻射交互作用,這些電荷隨即會被直接驅動往電荷收集畫素。與僅使用GOS或碘化銫閃爍材料的間接轉換偵知器不同的是,非常少閃爍光會被散佈至輻射反應點之外,因此能維持與直接轉換偵知器如TFT上硒之空間解析度。 The composition of the present invention can be applied to a charged interpretation system such as a thin film transistor (TFT) to form a radiation transfer of a TFT array similar to that disclosed in U.S. Patent No. 5,319,206, issued toJ. The entire contents of the above-mentioned patents are incorporated by reference in this patent application. The upper electrode can be redeposited over the radiation converter. A bias voltage can be applied between the upper electrode and the TFT current reflow plane to produce a uniform electric field in the radiation converter layer. During the imaging process, impinging radiation passes through an object, such as a human body, which is absorbed by the composition in the radiation conversion layer, producing light that is proportional to the intensity of the absorbed radiant energy. Most of the scintillation light is absorbed by the surrounding CGM, thus producing an electron-hole pair charge proportional to the scintillation intensity. In an electric field to which a bias voltage is applied, charges of the same polarity are driven toward the biasing electrode. Such a structure is similar to a direct conversion radiation imaging detector such as a selenium detector with a charge-switched selenium layer as described in U.S. Patent No. 5,319,206. Since most of the light is absorbed by the CGM coating or in close proximity to the scintillating material, the charge generated by the radiation absorption in the process is at the location of the radiation absorbing material. In a biased electric field, by less than the size of the scintillation particle size, it may be much smaller than the radiation interaction of the TFT pixel size, which is then directly driven to the charge collection pixels. Unlike indirect conversion detectors that use only GOS or cesium iodide scintillation materials, very little scintillation light is scattered outside the radiation reaction point, thus maintaining spatial resolution of selenium on direct conversion detectors such as TFTs. degree.
第3圖係繪示本發明之輻射成像偵知器的剖面圖。 Figure 3 is a cross-sectional view showing the radiation imaging detector of the present invention.
準備市面上可得之具有基底600、訊號儲存電容700、電晶體800、以及電荷擴大器900的薄膜電晶體。可使用市面上販售的顯示面板使用之液晶顯示器。在薄膜電晶體顯示器上形成電荷收集電極500。在電荷收集電極500的表面施加電子阻障層(electron blocking layer)400。電 子阻障層400較佳是氧化鋁。包含有本發明之組合物的輻射轉換層100可塗佈於電子阻障層400上。電荷注入阻障層200以及上電極300可形成於輻射轉換層100上。 A thin film transistor having a substrate 600, a signal storage capacitor 700, a transistor 800, and a charge expander 900 available on the market is prepared. A liquid crystal display that can be used in a commercially available display panel can be used. A charge collecting electrode 500 is formed on the thin film transistor display. An electron blocking layer 400 is applied to the surface of the charge collecting electrode 500. Electricity Sub-barrier layer 400 is preferably aluminum oxide. The radiation conversion layer 100 comprising the composition of the present invention can be applied to the electron barrier layer 400. The charge injection barrier layer 200 and the upper electrode 300 may be formed on the radiation conversion layer 100.
本發明之組合物不僅能應用在醫療診斷之輻射成像系統,亦可使用在其他輻射成像系統,如工業用,非破壞性檢查,放射自顯影等等。 The composition of the present invention can be applied not only to radiation imaging systems for medical diagnosis, but also to other radiation imaging systems such as industrial, non-destructive inspection, autoradiography and the like.
一實施例中,在沒有使用充電裝置如電暈充電器(corona charger)的上電極,將靜電電荷沉積在本發明之組合物之上。靜電電荷可藉由如X光、γ射線、以及游離輻射的輻射放電。在X光曝光或游離輻射,表面的靜電電荷會根據輻射強度而放電。組合物表面剩餘的電荷與輻射的反轉影像成比例。靜電電荷被記錄而形成輻射影像。上述輻射影像可藉由以靜電探針、充電的碳粉、或任何2D電荷影像偵測裝置掃描表面而取得。 In one embodiment, an electrostatic charge is deposited on the composition of the present invention without the use of a charging device such as an upper electrode of a corona charger. The electrostatic charge can be discharged by radiation such as X-rays, gamma rays, and free radiation. In X-ray exposure or free radiation, the electrostatic charge on the surface is discharged according to the intensity of the radiation. The charge remaining on the surface of the composition is proportional to the inverted image of the radiation. The electrostatic charge is recorded to form a radiation image. The radiation image can be obtained by scanning the surface with an electrostatic probe, charged toner, or any 2D charge image detecting device.
本發明之細節將參考下列實施例更詳細說明之。對於熟習此技藝者,不包含在本發明的實施例是很容易辨識的,因此在此省略。 The details of the invention are described in more detail with reference to the following examples. It is easily recognized by those skilled in the art that are not included in the embodiment of the present invention, and therefore are omitted here.
以10:1重量比混合二氯甲烷與甲苯成試液。再將2%重量之具有化學式I之做為CGM的鈦氧青花染料、2%重量之具有化學式II之做為CTM的4,4’-TPD(三苯胺二聚物)、2%重量之聚碳酸酯聚合物加入試液中形成混合物。CGM,CTM以及聚碳酸酯的重量比例為1:1:1。在4ml的CGM/CTM混合物與0.54ml的甲苯中加入直徑4μm之20g 的摻雜銪的硫氧化釓GOS粉末。接著使用厚度500μm之刮刀將上述組合物塗佈於銦錫氧化物(ITO)下電極。在50℃硬化48小時候,於組合物表面上塗佈導電上電極。對樣品的上電極施加偏壓,ITO下電極則連接於具有迴路到高電壓供電器的負載電阻R。如第4圖所示,將示波器探針連接到負載電阻R。 Methylene chloride and toluene were mixed in a weight ratio of 10:1 to prepare a test solution. 2% by weight of titanium oxygram dye of formula I as CGM, 2% by weight of 4,4'-TPD (triphenylamine dimer) of formula II as CTM, 2% by weight A carbonate polymer is added to the test solution to form a mixture. The weight ratio of CGM, CTM and polycarbonate is 1:1:1. Add 4g of 4μm diameter to 4ml of CGM/CTM mixture and 0.54ml of toluene The cerium-doped bismuth oxysulfide GOS powder. The above composition was then applied to an indium tin oxide (ITO) lower electrode using a doctor blade having a thickness of 500 μm. The conductive upper electrode was coated on the surface of the composition by hardening at 50 ° C for 48 hours. A bias is applied to the upper electrode of the sample, and the ITO lower electrode is connected to a load resistor R having a loop to a high voltage supply. Connect the oscilloscope probe to the load resistor R as shown in Figure 4.
第5圖係表示當施加正偏壓1000伏特時,來源為70KVP,1000mA以及20毫秒曝光於X光時的示波器訊號。第6圖係表示施加負偏壓1000伏特時的示波器訊號。當以2D薄膜電晶體陣列取代ITO玻璃時,X光曝光造成的電荷訊號會被每個獨立的畫素元件收集,形成X光影像。 Figure 5 shows the oscilloscope signal when the source is 70KVP, 1000mA and 20ms exposed to X-ray when a positive bias of 1000 volts is applied. Figure 6 shows the oscilloscope signal when a negative bias of 1000 volts is applied. When the ITO glass is replaced by a 2D thin film transistor array, the charge signal caused by the X-ray exposure is collected by each individual pixel element to form an X-ray image.
上述揭露之實施例,雖然使用特定名詞,是僅用來描述大觀念,而不是用以侷限發明範圍。因此,對於熟習此技藝者,可在不脫離本發明列出之以下申請專利範圍的精神與範圍內有各種不同的變化形式。 The above disclosed embodiments, although using specific nouns, are only used to describe the broad concepts, and are not intended to limit the scope of the invention. Therefore, various modifications may be made without departing from the spirit and scope of the inventions.
10‧‧‧閃爍顆粒 10‧‧‧Sparkling particles
20‧‧‧有機基質 20‧‧‧Organic matrix
21‧‧‧電荷產生材料 21‧‧‧ Charge generating materials
100‧‧‧輻射轉換層 100‧‧‧radiation conversion layer
200‧‧‧電荷注入阻障層 200‧‧‧charge injection barrier
300‧‧‧上電極 300‧‧‧Upper electrode
400‧‧‧電子阻障層 400‧‧‧Electronic barrier layer
500‧‧‧電荷收集電極 500‧‧‧charge collecting electrode
600‧‧‧基底 600‧‧‧Base
700‧‧‧訊號儲存電容 700‧‧‧Signal storage capacitor
800‧‧‧電晶體 800‧‧‧Optoelectronics
900‧‧‧電荷擴大器 900‧‧‧ Charge Amplifier
第1圖係繪示一實施例之組合物的概要圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the composition of an embodiment.
第2圖係繪示另一實施例之組合物的概要圖。 Figure 2 is a schematic view showing the composition of another embodiment.
第3圖係繪示輻射成像偵知器的剖面圖。 Figure 3 is a cross-sectional view showing the radiation imaging detector.
第4圖係繪示實施例之實驗架設的概要圖。 Figure 4 is a schematic view showing the experimental setup of the embodiment.
第5圖係繪示實施例所施加之1000伏特的正偏壓的示波器訊號。 Figure 5 illustrates an oscilloscope signal with a positive bias of 1000 volts applied to the embodiment.
第6圖係繪示實施例所施加之1000伏特的負偏壓的示波器訊號。 Fig. 6 is a diagram showing an oscilloscope signal of a negative bias voltage of 1000 volts applied in the embodiment.
10‧‧‧閃爍顆粒 10‧‧‧Sparkling particles
20‧‧‧有機基質 20‧‧‧Organic matrix
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TW101127718A TWI461725B (en) | 2011-08-02 | 2012-08-01 | Radiation imaging system |
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