TW201324269A - Low chromatic aberration touch substrate and the manufacturing method thereof - Google Patents

Low chromatic aberration touch substrate and the manufacturing method thereof Download PDF

Info

Publication number
TW201324269A
TW201324269A TW100145791A TW100145791A TW201324269A TW 201324269 A TW201324269 A TW 201324269A TW 100145791 A TW100145791 A TW 100145791A TW 100145791 A TW100145791 A TW 100145791A TW 201324269 A TW201324269 A TW 201324269A
Authority
TW
Taiwan
Prior art keywords
layer
oxynitride film
color difference
touch substrate
yttrium
Prior art date
Application number
TW100145791A
Other languages
Chinese (zh)
Other versions
TWI467429B (en
Inventor
Gu-Wei Jian
Dao-Yang Huang
Jian-Ye Gu
guo-shun Ye
Sheng-Han Huang
Original Assignee
Bay Zu Prec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bay Zu Prec Co Ltd filed Critical Bay Zu Prec Co Ltd
Priority to TW100145791A priority Critical patent/TW201324269A/en
Publication of TW201324269A publication Critical patent/TW201324269A/en
Application granted granted Critical
Publication of TWI467429B publication Critical patent/TWI467429B/zh

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Position Input By Displaying (AREA)

Abstract

A low chromatic aberration touch substrate and the manufacturing method thereof are disclosed. The low chromatic aberration touch substrate comprises a light transmissive base layer, a light transmissive chromatic aberration adjustment layer provided on the base layer, and a conductive and light transmissive induction layer provided on the chromatic aberration adjustment layer. The chromatic aberration adjustment layer includes a silicon oxynitride film. Since the silicon oxynitride film is placed in between the induction layer and the base layer, chromatic aberration between the base layer and the induction layer can be moderated and improved by utilizing the silicon oxynitride film.

Description

低色差觸控基板及其製造方法Low color difference touch substrate and manufacturing method thereof

本發明是有關於一種透光板,特別是指一種低色差觸控基板及其製造方法。The invention relates to a light transmissive plate, in particular to a low color difference touch substrate and a manufacturing method thereof.

常見的觸控面板主要區分為電阻式與電容式兩種,而都是在透明基板上形成導電薄膜以感應點選的位置,其中電容式的導電薄膜是圖形化的分佈,而容易發生透光度不平均,以及色差的情形,使導電薄膜圖形輪廓明顯,此外,觸控面板是與顯示器組裝,而覆蓋在其前側,因此還會影響顯示品質及造成色彩失真。另一方面,在製造觸控面板的過程中,部分採用濺鍍的方式成型的膜層,其是同時採用數種靶材,因此增加了製造成本。The common touch panels are mainly divided into two types: resistive type and capacitive type, and all of them are formed on a transparent substrate to inductively select a position, wherein the capacitive conductive film is patterned and easily permeable. In the case of unevenness and chromatic aberration, the contour of the conductive film is conspicuous. In addition, the touch panel is assembled with the display and covers the front side thereof, thereby affecting display quality and causing color distortion. On the other hand, in the process of manufacturing the touch panel, a film layer formed by sputtering is partially used, which uses several kinds of targets at the same time, thereby increasing the manufacturing cost.

因此,本發明之目的,即在提供一種低色差觸控基板及其製造方法。Accordingly, it is an object of the present invention to provide a low color difference touch substrate and a method of fabricating the same.

於是,本發明低色差觸控基板,包含一可透光的基底層、一可透光地設置在該基底層上的色差調整層,及一可導電並可透光地設置在該色差調整層上的感應層。該色差調整層包括一可透光的氮氧化矽膜。Therefore, the low color difference touch substrate of the present invention comprises a light transmissive base layer, a color difference adjustment layer permeable to the base layer, and an electrically conductive and transparent layer disposed on the color difference adjustment layer. The sensing layer on the top. The color difference adjusting layer comprises a light transmissive yttrium oxynitride film.

而本發明低色差觸控基板製造方法,包含以下步驟:將一可透光的基底層置放於一濺鍍設備的反應腔中,並在該反應腔中裝設一含有矽元素的靶材,再填充氣體,同時控制氣體組成比例。接著,使該反應腔中氣體溫度在250℃至450℃間,並且該反應腔中的壓力在1毫托爾至5毫托爾之間。該反應腔中的氣體與該靶材作用,而形成一氮氧化矽膜在該基底層上,而構成該色差調整層。,再形成一感應層於該色差調整層上。The method for manufacturing a low-chromaticity touch substrate of the present invention comprises the steps of: placing a light-permeable substrate layer in a reaction chamber of a sputtering device, and installing a target containing germanium in the reaction chamber; , refill the gas while controlling the gas composition ratio. Next, the gas temperature in the reaction chamber is between 250 ° C and 450 ° C, and the pressure in the reaction chamber is between 1 mTorr and 5 mTorr. The gas in the reaction chamber acts on the target to form a ruthenium oxynitride film on the base layer to constitute the color difference adjustment layer. And forming a sensing layer on the color difference adjusting layer.

本發明之有益功效在於:該感應層與該基底層間夾設了該氮氧化矽膜,因此可利用該氮氧化矽膜來緩和並改善該基底層與該感應層間的色差,而在形成該氮氧化矽膜的過程中,控制氣體組成比例來調整該氮氧化矽膜的折射率,以調整色差,此外僅需裝設單一靶材,因此能有效地降低生產成本。The beneficial effect of the invention is that the yttrium oxynitride film is interposed between the sensing layer and the substrate layer, so that the yttrium oxynitride film can be used to alleviate and improve the chromatic aberration between the substrate layer and the sensing layer, and the nitrogen is formed. In the process of ruthenium oxide film, the gas composition ratio is controlled to adjust the refractive index of the yttrium oxynitride film to adjust the chromatic aberration, and only a single target needs to be installed, so that the production cost can be effectively reduced.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之三個較佳實施例的詳細說明中,將可清楚的呈現。要注意的是,在以下的說明內容中,類似的元件是以相同的編號來表示。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of FIG. It is to be noted that in the following description, like elements are denoted by the same reference numerals.

參閱圖1、2,本發明低色差觸控基板製造方法之第一較佳實施例,用以形成一低色差觸控基板1。而該低色差觸控基板1包括一可透光的基底層11、一披覆在該基底層11上的色差調整層12,及一披覆在該色差調整層12上的感應層13。Referring to FIGS. 1 and 2, a first preferred embodiment of the method for fabricating a low color difference touch substrate of the present invention is used to form a low color difference touch substrate 1. The low color difference touch substrate 1 includes a light transmissive base layer 11 , a color difference adjusting layer 12 coated on the base layer 11 , and a sensing layer 13 coated on the color difference adjusting layer 12 .

本實施例的基底層11是可透光的透明玻璃板。而該色差調整層12可透光,並且包括一披覆在該基底層11上的氮氧化矽膜121。而該氮氧化矽膜121是氮氧化矽(SiON)材質製成。該感應層13可導電且可透光,本實施例的感應層13是氧化銦錫(ITO)材質製成,然而也可以是摻鋁氧化鋅(AZO)或摻鎵氧化鋅(GZO)材質。The base layer 11 of the present embodiment is a transparent glass plate that can transmit light. The color difference adjusting layer 12 is transparent to light and includes a yttrium oxynitride film 121 coated on the base layer 11. The yttrium oxynitride film 121 is made of cerium oxynitride (SiON). The sensing layer 13 is electrically conductive and transparent. The sensing layer 13 of the present embodiment is made of indium tin oxide (ITO) material, but may be aluminum-doped zinc oxide (AZO) or gallium-doped zinc oxide (GZO).

而該低色差觸控基板製造方法,是利用氣相沉積法來形成該色差調整層12,並包含以下步驟:The method for manufacturing the low color difference touch substrate is to form the color difference adjustment layer 12 by a vapor deposition method, and includes the following steps:

執行步驟21:將該基底層11置放於一濺鍍設備的反應腔(圖未示)中。在本較佳實施例中,該濺鍍設備是磁控濺鍍設備。Step 21 is performed: the base layer 11 is placed in a reaction chamber (not shown) of a sputtering apparatus. In the preferred embodiment, the sputtering apparatus is a magnetron sputtering apparatus.

再執行步驟22:於該反應腔中置入一個包含矽元素的靶材(圖未示),並填充氣體。在本較佳實施例中,該靶材是矽材質製成,並且是於該反應腔中填充氧氣、氮氣與氬氣,並控制該氧氣、氮氣與氬氣的比例,使該氮氣佔氮與氧氣總和的比例大於或等於0.85。Then, step 22 is performed: a target containing germanium element (not shown) is placed in the reaction chamber, and the gas is filled. In the preferred embodiment, the target is made of tantalum material, and the reaction chamber is filled with oxygen, nitrogen and argon, and the ratio of the oxygen, nitrogen and argon is controlled to make the nitrogen occupy nitrogen and The ratio of the sum of oxygen is greater than or equal to 0.85.

補充說明的是,該靶材也可以是二氧化矽材質,並通入氮氣與氬氣,此外,該靶材還可以是氮化矽材質,此時是在該反應腔中通入氧氣與氬氣。In addition, the target may also be made of cerium oxide and nitrogen and argon. In addition, the target may be tantalum nitride, in which oxygen and argon are introduced into the reaction chamber. gas.

接著執行步驟23:使該反應腔中氣體溫度在250℃至450℃間。在本較佳實施例中,是利用電熱管來進行加熱,以調整該反應腔中的氣體的溫度。由於反應溫度過低時無法使氣體有效地作用,造成緻密度不足的情形,而反應溫度過高時會造成薄膜應力過大,因此以250至450℃間為最佳。Next, step 23 is performed: the gas temperature in the reaction chamber is between 250 ° C and 450 ° C. In the preferred embodiment, the heating is performed using an electric heating tube to adjust the temperature of the gas in the reaction chamber. When the reaction temperature is too low, the gas cannot be effectively acted, resulting in insufficient density, and when the reaction temperature is too high, the film stress is excessively large, so that it is preferably between 250 and 450 °C.

執行步驟24:使該反應腔中的壓力在1毫托爾(mtorr)至5毫托爾之間。在本較佳實施例中,是利用抽送氣設備調整該反應腔中氣體量,使其內部壓力維持在1至5毫托爾間。需要注意的是,由於反應壓力過低時反應速度過慢,而反應壓力過高時會發生緻密度不良,因此以1至5毫托爾為最佳。Step 24 is performed to bring the pressure in the reaction chamber between 1 mtorr and 5 mTorr. In the preferred embodiment, the amount of gas in the reaction chamber is adjusted by means of a pumping device to maintain the internal pressure between 1 and 5 milliTorr. It should be noted that the reaction rate is too slow when the reaction pressure is too low, and the density is poor when the reaction pressure is too high, so that it is preferably 1 to 5 mTorr.

執行步驟25:反應腔中的氣體與靶材產生作用,而在該基底層11上形成該色差調整層12的氮氧化矽膜121。Step 25 is performed: the gas in the reaction chamber acts on the target, and the yttrium oxynitride film 121 of the color difference adjustment layer 12 is formed on the base layer 11.

需要注意的是,本實施例的氮氧化矽膜121的厚度在1至100奈米(nm)間,並可控制反應時間來調整厚度,此外,步驟22中調整氣體的比例是用以產生不同折射率的氮氧化矽膜121,在本實施例中,在氧氣、氮氣與氬氣為3比60比37,同時其壓力為3毫拖爾,而溫度為300℃的情況下,形成厚100奈米而折射率約為1.65的氮氧化矽膜,而此時氮氣佔氮與氧氣的比例約為0.95。在改變氧氣、氮氣與氬氣為10比60比30且同壓力溫度下,可形成1.47之折射率氮氧化矽膜,而此時氮氣佔氮與氧氣的比例約為0.86,因此調整該反應腔中的氣體比例,即可控制該氮氧化矽膜的折射率。It should be noted that the thickness of the yttrium oxynitride film 121 of the present embodiment is between 1 and 100 nanometers (nm), and the reaction time can be controlled to adjust the thickness. Further, the ratio of the gas in the step 22 is used to generate a difference. The refractive index yttrium oxynitride film 121, in the present embodiment, is 3 to 60 to 37 in oxygen, nitrogen and argon, and the pressure is 3 milliTorr, and at a temperature of 300 ° C, a thickness of 100 is formed. The ruthenium oxynitride film having a refractive index of about 1.65 is nanometer, and at this time, the ratio of nitrogen to nitrogen is about 0.95. When the oxygen, nitrogen and argon gas are changed at a ratio of 10 to 60 to 30 and at the same pressure, a refractive index ruthenium oxynitride film of 1.47 can be formed, and at this time, the ratio of nitrogen to nitrogen is about 0.86, so the reaction chamber is adjusted. The refractive index of the yttria film can be controlled by the ratio of the gas in the medium.

進一步地執行步驟26:在該反應腔中換裝ITO靶材,並填充氬氣與氧氣,再使該反應腔中的溫度維持在250~450℃,並且壓力維持在1至5毫拖爾(mtorr)間,反應腔中氣體與靶材發生作用,而在該色差調整層12的氮氧化矽膜121上形成該感應層13,並構成該低色差觸控基板1。Further, step 26 is performed: the ITO target is replaced in the reaction chamber, and argon gas and oxygen gas are filled, and the temperature in the reaction chamber is maintained at 250 to 450 ° C, and the pressure is maintained at 1 to 5 milliTorr ( Between mtorr), the gas in the reaction chamber acts on the target, and the sensing layer 13 is formed on the yttrium oxide film 121 of the color difference adjusting layer 12, and the low color difference touch substrate 1 is formed.

由於該基底層11與該感應層13間夾設了該色差調整層12的氮氧化矽膜121,此外,由於調整反應腔中的氣體比例,可控制該氮氧化矽膜121的折射率,進而調整整體的折射率,以緩和不同材質疊合時造成的視覺上的差異,並達到降低該基底層11與該感應層13間的色差之目的,同時具有操作便利性佳的優點。另一方面,本發明僅需採用單一的靶材,也就是本實施例的矽,即可形成該氮氧化矽膜121,因此還可達到降低生產成本及節省靶材的目的。Since the yttrium oxynitride film 121 of the chromatic aberration adjusting layer 12 is interposed between the base layer 11 and the sensing layer 13, the refractive index of the yttrium oxynitride film 121 can be controlled by adjusting the proportion of the gas in the reaction chamber. The overall refractive index is adjusted to alleviate the visual difference caused by the overlapping of different materials, and the purpose of reducing the chromatic aberration between the base layer 11 and the sensing layer 13 is achieved, and the operation convenience is good. On the other hand, the present invention only needs to use a single target, that is, the crucible of the present embodiment, to form the niobium oxynitride film 121, thereby achieving the purpose of reducing production cost and saving the target.

而下表1是在基底層11之折射率1.52且厚度為0.7毫米(mm),而色差調整層12的氮氧化矽膜121的折射率為1.67且厚度為65奈米(nm),並且該感應層13的折射率為1.916且厚度為113奈米的情況下,對該低色差觸控基板1進行量測後結果,其顯示對於波長510奈米光線,該低色差觸控基板1的透射與反射的色差(△E*)分別為0.98及0.37,而皆小於1,而具有低色差的特性。Further, in Table 1 below, the refractive index of the underlying layer 11 is 1.52 and the thickness is 0.7 mm (mm), and the yttrium oxynitride film 121 of the chromatic aberration adjusting layer 12 has a refractive index of 1.67 and a thickness of 65 nm (nm), and When the refractive index of the sensing layer 13 is 1.916 and the thickness is 113 nm, the low-chromaticity touch substrate 1 is measured, and the result shows that the low-chromaticity touch substrate 1 is transmitted for a wavelength of 510 nm. The color difference (ΔE*) with reflection is 0.98 and 0.37, respectively, and both are less than 1, and have a characteristic of low chromatic aberration.

另一方面,下表2是在基底層11折射率1.52且厚度為0.7毫米(mm),而色差調整層12的氮氧化矽膜121的折射率為1.71且厚度為60奈米(nm),並且該感應層13的折射率為1.916且厚度為85奈米的情況下,對該低色差觸控基板1進行量測後結果,其顯示對於波長510奈米光線,該低色差觸控基板1的透射與反射的色差(△E*)分別為0.92及0.90,而皆小於1,亦具有低色差的特性,由表1、2可知,改變該氮氧化矽膜121的折射率與厚度,可調整整體的色差。On the other hand, Table 2 below is a refractive index of 1.52 in the base layer 11 and a thickness of 0.7 mm (mm), and the yttrium oxynitride film 121 of the chromatic aberration adjusting layer 12 has a refractive index of 1.71 and a thickness of 60 nm (nm). When the refractive index of the sensing layer 13 is 1.916 and the thickness is 85 nm, the low color difference touch substrate 1 is measured, and the low color difference touch substrate 1 is displayed for a wavelength of 510 nm. The color difference (ΔE*) of transmission and reflection is 0.92 and 0.90, respectively, and both are less than 1, and also have low chromatic aberration characteristics. It can be seen from Tables 1 and 2 that the refractive index and thickness of the yttrium oxynitride film 121 are changed. Adjust the overall color difference.

補充說明的是,所述色差(△E*)的計算方式,是依據CIE76訂定的標準,也就是明暗度值差(△L*)、紅綠色度座標值差(△a*)與黃藍色差度座標值差(△b*),其各自平方後總合開根號即為色差值。In addition, the calculation method of the color difference (ΔE*) is based on the standard set by CIE76, that is, the difference between the brightness value (ΔL*) and the difference value of the red-green degree coordinate (Δa*) and yellow. The difference value of the blue difference coordinates (Δb*), and the sum of the square roots after the respective squares is the color difference value.

參閱圖3、4,本發明低色差觸控基板製造方法之第二較佳實施例,同樣用以形成一低色差觸控基板1,並且該低色差觸控基板1包括一可透光的基底層11、一披覆在該基底層11上的色差調整層12,及一設置在該色差調整層12上的感應層13。Referring to FIGS. 3 and 4, a second preferred embodiment of the method for fabricating a low color difference touch substrate of the present invention is also used to form a low color difference touch substrate 1 , and the low color difference touch substrate 1 includes a light transmissive substrate. The layer 11, a color difference adjusting layer 12 coated on the base layer 11, and a sensing layer 13 disposed on the color difference adjusting layer 12.

而本實施例與該第一較佳實施不同處在於:本實施例的低色差觸控基板還包含一一夾設在該氮氧化矽膜121與該感應層13間且可透光的氧化矽層14。而所述氧化矽層14是由氧化矽(SiO)材質製成,並且厚度約為50奈米,而折射率在1.45至1.47之間。感應層13是披覆在該氧化矽層14上。The difference between the present embodiment and the first preferred embodiment is that the low color difference touch substrate of the embodiment further includes a ytterbium oxide which is interposed between the yttrium oxynitride film 121 and the sensing layer 13 and transparent to light. Layer 14. The yttrium oxide layer 14 is made of yttrium oxide (SiO) and has a thickness of about 50 nm and a refractive index of between 1.45 and 1.47. The sensing layer 13 is coated on the yttrium oxide layer 14.

此外,本實施例的低色差觸控基板製造方法的步驟25中,是在形成該氮氧化矽膜121後,再於該氮氧化矽膜121上形成該氧化矽層14。由於本較佳實施例同樣是在該基底層11與該感應層13間夾設該氮氧化矽膜121,因此可改變該氮氧化矽膜121的折射率,達到降低色差的目的。In the step 25 of the method for fabricating the low-difference touch panel of the present embodiment, after the yttrium oxynitride film 121 is formed, the yttrium oxide layer 14 is formed on the yttrium oxynitride film 121. Since the yttrium oxynitride film 121 is interposed between the base layer 11 and the sensing layer 13 in the preferred embodiment, the refractive index of the yttrium oxynitride film 121 can be changed to achieve the purpose of reducing chromatic aberration.

參閱圖5、6,本發明低色差觸控基板製造方法之第三較佳實施例,同樣用以形成一低色差觸控基板1,並且該低色差觸控基板1包括一可透光的基底層11、一設置在該基底層11上方的色差調整層12,及一披覆在該色差調整層12上的感應層13。Referring to FIGS. 5 and 6 , a third preferred embodiment of the method for fabricating a low color difference touch substrate of the present invention is also used to form a low color difference touch substrate 1 , and the low color difference touch substrate 1 includes a light transmissive substrate. The layer 11, a color difference adjusting layer 12 disposed above the base layer 11, and a sensing layer 13 coated on the color difference adjusting layer 12.

而本實施例與該第一較佳實施例之不同處在於:本實施例的低色差觸控基板還包含一披覆在該基底層11上且可透光的氧化鈮層15、一披覆在該氧化鈮層15上且可透光的氧化矽層14。而本實施例的色差調整層12的氮氧化矽膜121是披覆在該氧化矽層14上。而所述氧化鈮層15是由氧化鈮(NbO)材質製成,並且厚度約為30奈米,而折射率在2.1至2.3之間。而所述氧化矽層14是由氧化矽(SiO)材質製成,並且厚度約為50奈米,而折射率在1.45至1.47之間。The difference between the present embodiment and the first preferred embodiment is that the low color difference touch substrate of the embodiment further includes a ruthenium oxide layer 15 coated on the base layer 11 and transparent. A yttria layer 14 on the yttria layer 15 and permeable to light. On the other hand, the yttrium oxynitride film 121 of the color difference adjusting layer 12 of the present embodiment is coated on the yttrium oxide layer 14. The yttria layer 15 is made of yttria (NbO) and has a thickness of about 30 nm and a refractive index of between 2.1 and 2.3. The yttrium oxide layer 14 is made of yttrium oxide (SiO) and has a thickness of about 50 nm and a refractive index of between 1.45 and 1.47.

此外,本實施例的低色差觸控基板製造方法的步驟21中,是先在該該基底層11上形成該氧化鈮層15,再於該氧化鈮層15上形成該氧化矽層14,隨後再置於該反應腔內。In the step 21 of the method for fabricating the low-difference touch substrate of the present embodiment, the yttrium oxide layer 15 is formed on the underlying layer 11, and the yttrium oxide layer 14 is formed on the yttrium oxide layer 15. It is placed in the reaction chamber.

而本實施例的步驟25是於該氧化矽層14,上形成該氮氧化矽膜121。由於本較佳實施例,同樣是在該基底層11與該感應層13間夾設該氮氧化矽膜121,因此可改變該氮氧化矽膜121的厚度,以調整其折射率來達到降低色差的目的。In step 25 of the embodiment, the yttrium oxynitride film 121 is formed on the yttrium oxide layer 14. In the preferred embodiment, the yttrium oxynitride film 121 is also interposed between the base layer 11 and the sensing layer 13. Therefore, the thickness of the yttrium oxynitride film 121 can be changed to adjust the refractive index to reduce the chromatic aberration. the goal of.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

1...低色差觸控基板1. . . Low color difference touch substrate

11...基底層11. . . Base layer

12...色差調整層12. . . Chromatic aberration adjustment layer

121...氮氧化矽膜121. . . Niobium oxide film

13...感應層13. . . Sensing layer

14...氧化矽層14. . . Cerium oxide layer

15...氧化鈮層15. . . Cerium oxide layer

21~26...步驟21~26. . . step

圖1是一側視示意圖,顯示本發明低色差觸控基板製造方法的第一較佳實施例,及該第一較佳實施例的一低色差觸控基板;1 is a side view showing a first preferred embodiment of a method for fabricating a low color difference touch substrate of the present invention, and a low color difference touch substrate of the first preferred embodiment;

圖2是一流程方塊圖,主要顯示該第一較佳實施例;Figure 2 is a block diagram showing the first preferred embodiment;

圖3是一側視示意圖,顯示本發明低色差觸控基板製造方法的第二較佳實施例,及該第二較佳實施例的一低色差觸控基板;3 is a side view showing a second preferred embodiment of the method for manufacturing a low color difference touch substrate of the present invention, and a low color difference touch substrate of the second preferred embodiment;

圖4是一流程方塊圖,主要顯示該第二較佳實施例;Figure 4 is a block diagram showing the second preferred embodiment;

圖5是一側視示意圖,顯示本發明低色差觸控基板製造方法的第三較佳實施例,及該第三較佳實施例的一低色差觸控基板;及5 is a side view showing a third preferred embodiment of the method for fabricating the low color difference touch substrate of the present invention, and a low color difference touch substrate of the third preferred embodiment;

圖6是一流程方塊圖,主要顯示該第三較佳實施例。Figure 6 is a block diagram showing the third preferred embodiment.

1...低色差觸控基板1. . . Low color difference touch substrate

11...基底層11. . . Base layer

12...色差調整層12. . . Chromatic aberration adjustment layer

121...氮氧化矽膜121. . . Niobium oxide film

13...感應層13. . . Sensing layer

Claims (11)

一種低色差觸控基板,包含:一基底層,可透光;一色差調整層,可透光地設置在該基底層上,並包括一氮氧化矽膜;及一感應層,可導電,並可透光地設置在該色差調整層上。A low color difference touch substrate comprises: a base layer transparent to light; a color difference adjustment layer disposed on the base layer transparently, and comprising a ruthenium oxynitride film; and a sensing layer electrically conductive, and It is permeable to light on the color difference adjustment layer. 依據申請專利範圍第1項所述之低色差觸控基板,其中,該氮氧化矽膜是披覆在該基底層上,該氮氧化矽膜的厚度在1奈米至100奈米之間,並且折射率在1.47至2.3之間。The low color difference touch substrate according to claim 1, wherein the ruthenium oxynitride film is coated on the base layer, and the thickness of the ruthenium oxynitride film is between 1 nm and 100 nm. And the refractive index is between 1.47 and 2.3. 依據申請專利範圍第1項所述之低色差觸控基板,其中,該氮氧化矽膜是披覆在該基底層上,該低色差觸控基板還包含一夾設在該氮氧化矽膜與該感應層間且可透光的氧化矽層。The low chromaticity touch substrate according to claim 1, wherein the yttrium oxynitride film is coated on the base layer, and the low chromaticity touch substrate further comprises a yttrium oxynitride film and The light-transmissive yttrium oxide layer between the sensing layers. 依據申請專利範圍第1項所述之低色差觸控基板,還包含一披覆在該基底層上且可透光的氧化鈮層,及一披覆在該氧化鈮層上且可透光的氧化矽層,該該氮氧化矽膜是披覆在該氧化矽層上。The low chromaticity touch substrate according to claim 1, further comprising a yttria layer coated on the base layer and permeable to light, and a light permeable layer coated on the yttrium oxide layer A ruthenium oxide layer, the ruthenium oxynitride film is coated on the ruthenium oxide layer. 一種低色差觸控基板製造方法,包含以下步驟:步驟A:將一可透光的基底層置放於一濺鍍設備的反應腔中;步驟B:在該反應腔中裝設一含有矽元素的靶材,並填充氣體,同時控制氣體組成比例;步驟C:使該反應腔中氣體溫度在250℃至450℃間;步驟D:使該反應腔中的壓力在1毫托爾至5毫托爾之間;步驟E:反應腔中的氣體與該靶材作用,而形成一氮氧化矽膜在該基底層上,並構成該色差調整層。步驟F:形成一感應層在該色差調整層上。A method for manufacturing a low color difference touch substrate comprises the following steps: Step A: placing a light transmissive substrate layer in a reaction chamber of a sputtering apparatus; Step B: installing a germanium element in the reaction chamber Target, and fill the gas while controlling the gas composition ratio; Step C: the gas temperature in the reaction chamber is between 250 ° C and 450 ° C; Step D: the pressure in the reaction chamber is between 1 mTorr to 5 m Between the Thor; Step E: The gas in the reaction chamber acts on the target to form a ruthenium oxynitride film on the base layer, and constitutes the chromatic aberration adjusting layer. Step F: forming a sensing layer on the color difference adjusting layer. 依據申請專利範圍第5項所述之低色差觸控基板製造方法,其中,在步驟B中,該靶材是矽材質,並通入氧氣及氮氣,並且調整該氧氣與氮氣的比例,以控制形成的該氮氧化矽膜的折射率,並控制反應時間以控制形成的該氮氧化矽膜的厚度。The method for manufacturing a low chromaticity touch substrate according to claim 5, wherein in the step B, the target is made of bismuth material, and oxygen and nitrogen are introduced, and the ratio of the oxygen to the nitrogen is adjusted to control The refractive index of the yttrium oxynitride film is formed, and the reaction time is controlled to control the thickness of the yttrium oxynitride film formed. 依據申請專利範圍第6項所述之低色差觸控基板製造方法,其中,在步驟B中,該氮氣在該氮氣及該氧氣總合體積的比例大於或等於0.85,在步驟E中形成的氮氧化矽膜的折射率在1.47至2.3之間。The method for manufacturing a low color difference touch panel according to claim 6, wherein in step B, the ratio of the nitrogen gas to the total volume of the nitrogen gas and the oxygen is greater than or equal to 0.85, and the nitrogen formed in the step E The yttrium oxide film has a refractive index between 1.47 and 2.3. 依據申請專利範圍第5項所述之低色差觸控基板製造方法,其中,在步驟B中,該靶材是氮化矽材質,並通入氧氣與氬氣,並且調整該氧氣與氬氣的比例,以控制該氮氧化矽膜的折射率,並控制反應時間以控制該氮氧化矽膜的厚度。The method for manufacturing a low chromaticity touch substrate according to claim 5, wherein in the step B, the target is made of tantalum nitride, and oxygen and argon are introduced, and the oxygen and argon are adjusted. The ratio is controlled to control the refractive index of the yttrium oxynitride film, and the reaction time is controlled to control the thickness of the yttrium oxynitride film. 依據申請專利範圍第5項所述之低色差觸控基板製造方法,其中,在步驟B中,該靶材是二氧化矽材質,並通入氮氣與氬氣,並且調整該氮氣與氬氣的比例,以控制該氮氧化矽膜的折射率,並控制反應時間以控制該氮氧化矽膜的厚度。The method for manufacturing a low chromaticity touch substrate according to claim 5, wherein in the step B, the target is made of cerium oxide, and nitrogen and argon are introduced, and the nitrogen and argon are adjusted. The ratio is controlled to control the refractive index of the yttrium oxynitride film, and the reaction time is controlled to control the thickness of the yttrium oxynitride film. 依據申請專利範圍第5至8項之任一項所述之低色差觸控基板製造方法,其中,在步驟E中,在形成該氮氧化矽膜後,再於該氮氧化矽膜上形成一層氧化矽層。The method for manufacturing a low color difference touch panel according to any one of claims 5 to 8, wherein in the step E, after the formation of the yttrium oxynitride film, a layer is formed on the yttrium oxynitride film. Oxide layer. 依據申請專利範圍第5至9項中任一項所述之低色差觸控基板製造方法,其中,在步驟A中,在將該基底層置於該反應腔前,是先在該基底層上形成一層氧化鈮層,並於該氧化鈮層上形成一層氧化矽層,在步驟E中,是在該氧化矽層上形成該氮氧化矽膜。The method for manufacturing a low-difference touch substrate according to any one of claims 5 to 9, wherein in the step A, the substrate layer is placed on the substrate layer before being placed in the reaction chamber. A layer of ruthenium oxide is formed, and a layer of ruthenium oxide is formed on the ruthenium oxide layer. In step E, the ruthenium oxynitride film is formed on the ruthenium oxide layer.
TW100145791A 2011-12-12 2011-12-12 Low chromatic aberration touch substrate and the manufacturing method thereof TW201324269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100145791A TW201324269A (en) 2011-12-12 2011-12-12 Low chromatic aberration touch substrate and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100145791A TW201324269A (en) 2011-12-12 2011-12-12 Low chromatic aberration touch substrate and the manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201324269A true TW201324269A (en) 2013-06-16
TWI467429B TWI467429B (en) 2015-01-01

Family

ID=49032986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100145791A TW201324269A (en) 2011-12-12 2011-12-12 Low chromatic aberration touch substrate and the manufacturing method thereof

Country Status (1)

Country Link
TW (1) TW201324269A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988631A (en) * 2015-03-05 2016-10-05 宸鸿科技(厦门)有限公司 Touch panel and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007212815A (en) * 2006-02-10 2007-08-23 Seiko Epson Corp Electro-optical device, substrate for electro-optical device, manufacturing method of the electro-optical device, and electronic equipment
JP5473246B2 (en) * 2008-05-02 2014-04-16 富士通コンポーネント株式会社 Touch panel substrate and touch panel having the same
CN201429836Y (en) * 2009-06-29 2010-03-24 深圳莱宝高科技股份有限公司 Capacitive touch screen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988631A (en) * 2015-03-05 2016-10-05 宸鸿科技(厦门)有限公司 Touch panel and manufacturing method thereof
CN105988631B (en) * 2015-03-05 2019-02-19 宸鸿科技(厦门)有限公司 Touch panel and preparation method thereof

Also Published As

Publication number Publication date
TWI467429B (en) 2015-01-01

Similar Documents

Publication Publication Date Title
CN103443748B (en) Substrate with transparent electrode, method for producing same, and touch panel
CN103345962B (en) Transparent conducting film
Hong et al. Index-matched indium tin oxide electrodes for capacitive touch screen panel applications
CN103226212B (en) The one shadow nesa coating that disappears
CN104461157B (en) Preparation method, touch panel, touch-screen and the display device of touch panel
CN101770319A (en) Capacitive touch panel, manufacturing method therefor and liquid crystal display apparatus provided with the touch panel
WO2014187090A1 (en) Color filter array substrate, manufacturing method therefor, and display apparatus
CN104303240A (en) Substrate with transparent electrode, method for manufacturing same, and touch panel
JP2006126338A (en) Polarizer and its manufacturing method
KR20160035998A (en) Conductive structure body and method for manufacturing the same
WO2013170607A1 (en) Novel double-sided conductive film manufacturing process
CN202390316U (en) Low-radiation coated glass
CN109244174A (en) Photoelectric sensor and preparation method, substrate, OLED display panel
CN205319159U (en) Display substrates , display panel and display device
TWM474967U (en) High transmittance vanishing glass used in OGS
CN102514285A (en) Low-radiation coated glass and manufacturing method thereof
CN104834424B (en) The shadow that disappears is anti-reflection transparent conductive film
US20160224151A1 (en) Electrode to be used in input device and method for producing same
CN106970439A (en) Touch control display apparatus and contact panel
TW201108259A (en) Film with color homogeneity
CN103675978A (en) Wavelength selection type color filter and display structure using wavelength selection type color filter
CN103197781A (en) Low-color-difference touch substrate and manufacturing method thereof
TW201324269A (en) Low chromatic aberration touch substrate and the manufacturing method thereof
WO2021027048A1 (en) Organic light-emitting diode display panel
CN104176947B (en) ITO electro-conductive glass and preparation method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees