CN104834424B - The shadow that disappears is anti-reflection transparent conductive film - Google Patents
The shadow that disappears is anti-reflection transparent conductive film Download PDFInfo
- Publication number
- CN104834424B CN104834424B CN201510255236.4A CN201510255236A CN104834424B CN 104834424 B CN104834424 B CN 104834424B CN 201510255236 A CN201510255236 A CN 201510255236A CN 104834424 B CN104834424 B CN 104834424B
- Authority
- CN
- China
- Prior art keywords
- film
- layer
- silicon oxynitride
- sio
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention discloses the anti-reflection transparent conductive film of the shadow that disappears, including substrate, and the top surface of substrate is successively up provided with upper silicon oxynitride film and upper SiO2Film layer, upper silicon oxynitride film and upper SiO2Film layer constitutes composite film on one group, and substrate top surface is at least provided with composite film on one group；The bottom surface of substrate is past successively to have lower silicon oxynitride film and lower SiO2Film layer, lower silicon oxynitride film and lower SiO2Film layer constitutes composite film under one group, and substrate bottom surface is at least provided with composite film under one group；The outer film surface of upper composite film and/or lower composite film is provided with ITO layer；The molecular formula of the silicon oxynitride is SiNxOy, wherein x, y is respectively the molal quantity of nitrogen, oxygen, 1≤x≤4/3,0≤y≤1/3, x/y >=3；Silicon oxynitride film and SiO2Film layer by optical interference cancellation principle cause ITO layer by etching with by etching area, colour is not close under D65 light conditions, and in neutrality, reduce influence of the thicknesses of layers to membrane system color change so that the shadow effect that disappears is easier control, and reduces production cost.
Description
Technical field
The present invention relates to touch screen technology field, specifically one kind can eliminate face between etching area and non-etching area
The different anti-reflection transparent conductive film of the shadow that disappears of aberration.
Background technology
Transparent conductive oxide film be capacitive touch screen critical piece, the film be located at viewing area, typically by
Ito film etching is formed, and the refractive index of conducting film is different from the refractive index of touch screen base plate, and ito film refractive index is generally 1.9-
2.0, the refractive index of touch screen base plate is about 1.5, causes electrode in viewing area（ITO）With the visible reflectance in electrode gap with thoroughly
Penetrating spectrum has larger difference, makes electrode high-visible with gap（Aberration Δ a*With Δ b*More than 1）, and color is not in neutrality（Face
Se Zhi ∣ a*∣ Yu ∣ b*∣ is more than 1）.Other touch screen size is bigger, it is desirable to which the surface resistance of ITO layer is smaller, the thickness of required ITO layer
Degree is thicker, causes the aberration in electrode and gap more obvious, it is seen that light transmission rate is also reduced, has a strong impact on visual effect, reduces
Touch-screen quality.
The shadow that disappears is anti-reflection, and transparent conductive film is to solve the problems, such as one of aberration, the Main Means for improving visible light transmissivity.Disappear
The general high and low refractive index transparent dielectric material and the ito thin film of outmost surface by being sequentially overlapped of shadow is anti-reflection transparent conductive film
Composition, wherein high-index material mainly include Nb2O5Or TiO2Film etc., low-index material is generally SiO2、MgF2It is thin
Film etc..For example《One kind disappears shadow high transmittance OGS glass》（Publication No. CN103092416A）Patent document disclose by
Nb2O5Layer, SiO2The membrane system of layer and the composition such as ITO layer,《A kind of shadow and anti-reflection conductive film plating layer of disappearing》（Publication No.
CN102779570A）Patent document disclose by Nb2O5Or TiO2Layer, SiO2Layer, ITO layer composition membrane system.
Although by Nb2O5Or TiO2It is higher as the shadow film visible light transmissivity that disappears of high refractive index layer, but be due to Nb2O5Or
TiO2Refractive index is higher in the range of visible light wave range, causes Nb2O5Or TiO2The small change of thicknesses of layers will cause film light
Learn thickness significantly to change so that the significant change of whole membrane system visible light wave range spectrum, and then cause the change of color.That is,
The thickness of the thickness of film layer, particularly high-index material has important influence for the change of membrane system color.In order to obtain
The shadow effect that disappears reaches the shadow film that disappears of requirement, and the plated film control technological requirement of high-index material is very harsh（For Nb2O5Or
TiO2Thicknesses of layers change is less than ± 0.5nm）, technology difficulty is big；The metal of other Nb, Ti material, ceramic target price are higher,
Also increase the manufacturing cost of the anti-reflection transparent conductive film of the shadow that disappears.
The content of the invention
Disappear the anti-reflection transparent conductive film of shadow it is an object of the invention to provide one kind, the conductive film results in excellent
Blanking effect, and the difficulty of technique making is reduced, while reducing cost.
The technical solution adopted for the present invention to solve the technical problems is：
The shadow that disappears is anti-reflection transparent conductive film, including substrate, the top surface of the substrate are up provided with upper silicon oxynitride film successively
Layer and upper SiO2Film layer, upper silicon oxynitride film and upper SiO2Film layer constitutes composite film on one group, and substrate top surface is at least provided with one
Composite film in group；The bottom surface of the substrate is past successively to have lower silicon oxynitride film and lower SiO2Film layer, lower silicon oxynitride
Film layer and lower SiO2Film layer constitutes composite film under one group, and substrate bottom surface is at least provided with composite film under one group；It is described compound
The outer film surface of film layer and/or lower composite film is provided with ITO layer；The molecular formula of the silicon oxynitride is SiNxOy, wherein x, y distinguish
For nitrogen, the molal quantity of oxygen, 1≤x≤4/3,0≤y≤1/3, x/y >=3.
Further, the thickness of the substrate is 0.1~1.1mm, and the thickness of upper silicon oxynitride film is 15~51nm, on
SiO2The thickness of film layer is 30~34nm, and the thickness of lower silicon oxynitride film is 10~80nm, lower SiO2The thickness of film layer be 68~
120nm, the thickness of ITO layer is 23~45nm.
The beneficial effects of the invention are as follows set silicon oxynitride film and SiO respectively on the two sides of substrate2Film layer, nitrogen oxidation
Silicon film and SiO2Film layer constitutes the composite film with anti-reflection anti-reflection function, causes ITO layer by optical interference cancellation principle
By etching with by etching area, colour is not close under D65 light conditions, and reduce thicknesses of layers to membrane system face in neutral
The influence of color change so that the shadow effect that disappears is easier control, and reduces production cost.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples：
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the visible transmission spectra comparison diagram of ITO layer in the embodiment of the present invention one；
Fig. 3 is the visible reflectance spectrum comparison diagram of ITO layer in the embodiment of the present invention one；
Fig. 4 is the visible transmission spectra comparison diagram of ITO layer in the embodiment of the present invention two；
Fig. 5 is the visible reflectance spectrum comparison diagram of ITO layer in the embodiment of the present invention two；
Fig. 6 is the visible transmission spectra comparison diagram of ITO layer in the embodiment of the present invention three；
Fig. 7 is the visible reflectance spectrum comparison diagram of ITO layer in the embodiment of the present invention three.
Embodiment
Embodiment one
Disappear the anti-reflection transparent conductive film of shadow, including substrate 1 as shown in figure 1, the present invention provides one kind, the top surface of substrate 1 according to
It is secondary to be up provided with upper silicon oxynitride film 2 and upper SiO2Film layer 3, upper silicon oxynitride film 2 and upper SiO2Film layer 3 is constituted on one group
Composite film；The bottom surface of the substrate 1 is past successively to have lower silicon oxynitride film 4 and lower SiO2Film layer 5, lower silicon oxynitride film
Layer 4 and lower SiO2Film layer 5 constitutes composite film under one group；The outer film surface of the upper composite film is provided with ITO layer 6；The nitrogen oxygen
The molecular formula of SiClx is SiNxOy, wherein x, y is respectively the molal quantity of nitrogen, oxygen, x=1.213, y=0.181, x/y=6.7,
SiNxOyRefractive index be 1.9；The thickness of substrate 1 is 1.1mm, and the thickness of upper silicon oxynitride film 2 is 15nm, upper SiO2Film layer 3
Thickness be 30nm, the thickness of lower silicon oxynitride film 4 is 10nm, lower SiO2The thickness of film layer 5 is 120nm, the face of ITO layer 6 electricity
Hinder for 60 Ω/, thickness is 45nm.With reference to shown in Fig. 2 and Fig. 3, under D65 light conditions, the non-etching area of ITO layer 6 can
See light transmission spectrum A1, the visible transmission spectra B1 of the etching area of ITO layer 6, the visible reflectance of the non-etching area of ITO layer 6
Spectrum A2, the visible reflectance spectrum B2 of the etching area of ITO layer 6, reflectivity, transmitance and color are drawn by A1, B1, A2 and B2
Value see the table below：
Table 1
From table 1, the shadow that originally disappears is anti-reflection, and transparent conductive film visible light wave range transmitance is all higher than 85%, and reflection differences are small
In 2, transmitted colors colour and reflection colour Se Zhi ∣ a*∣、∣b*∣ is respectively less than 0.5, aberration Δ a*、Δb*Also it is respectively less than 0.5.
Nb on substrate in the shadow transparent conductive film that disappears that will be prepared using conventional method2O5Layer thickness change to color L,
a*、b*SiN in the influence of value and the present embodimentxOyThe thickness change of layer is to color L, a*、b*The influence of value is compared, and is referred to down
Table：
Table 2
From table 2, Nb2O5Layer, SiNxOyWhen thickness degree changes ± 1nm respectively, the film prepared using conventional method
It is counter to penetrate Yan Se ∣ a*∣、∣b*∣ values are more than 1, and the counter of the anti-reflection transparent conductive film of the shadow that disappears of the present invention penetrates Yan Se ∣ a*∣、∣b*∣ value
Still less than 1.
Embodiment two
The thin film structure distribution of the anti-reflection electrically conducting transparent of shadow that disappears in the present embodiment is consistent with embodiment one, SiNxOyMiddle x=1,
Y=1/3, x/y=3, SiNxOyRefractive index be 1.75；The thickness of substrate 1 is 0.1mm, and the thickness of upper silicon oxynitride film 2 is
51nm, upper SiO2The thickness of film layer 3 is 34nm, and the thickness of lower silicon oxynitride film 4 is 80nm, lower SiO2The thickness of film layer 5 is
68nm, the surface resistance of ITO layer 6 is 200 Ω/, and thickness is 23nm.With reference to shown in Fig. 4 and Fig. 5, under D65 light conditions, ITO layer
The visible transmission spectra A3 of 6 non-etching areas, the visible transmission spectra B3 of the etching area of ITO layer 6, the non-etching region of ITO layer 6
The visible reflectance spectrum A4 in domain, the visible reflectance spectrum B4 of the etching area of ITO layer 6, reflection is drawn by A3, B3, A4 and B4
Rate, transmitance and color value see the table below：
Table 3
From table 3, the shadow that originally disappears is anti-reflection, and transparent conductive film visible light wave range transmitance is all higher than 85%, and reflection differences are small
In 2, transmitted colors colour and reflection colour Se Zhi ∣ a*∣、∣b*∣ is respectively less than 0.5, aberration Δ a*、Δb*Also it is respectively less than 0.5.
Nb on substrate in the shadow transparent conductive film that disappears that will be prepared using conventional method2O5Layer thickness change to color L,
a*、b*SiN in the influence of value and the present embodimentxOyThe thickness change of layer is to color L, a*、b*The influence of value is compared, and is referred to down
Table：
Table 4
From table 4, Nb2O5Layer, SiNxOyWhen thickness degree changes ± 1nm respectively, the film prepared using conventional method
It is counter to penetrate Yan Se ∣ a*∣、∣b*∣ values are more than 1, and the counter of the anti-reflection transparent conductive film of the shadow that disappears of the present invention penetrates Yan Se ∣ a*∣、∣b*∣ value
Still less than 1.
Embodiment three
The thin middle ITO layer 6 of the anti-reflection electrically conducting transparent of shadow that disappears in the present embodiment is located at the outer film surface of lower composite film, other membrane system knots
Structure is distributed, SiN consistent with embodiment onexOyMiddle x=4/3, y=0, SiNxOyRefractive index be 2.0；The thickness of substrate 1 is
0.6mm, the thickness of upper silicon oxynitride film 2 is 18nm, upper SiO2The thickness of film layer 3 is 30nm, the thickness of lower silicon oxynitride film 4
Spend for 20nm, lower SiO2The thickness of film layer 5 is 100nm, and the surface resistance of ITO layer 6 is 130 Ω/, and thickness is 35nm.With reference to Fig. 6 with
Shown in Fig. 7, under D65 light conditions, the visible transmission spectra A5 of the non-etching area of ITO layer 6, the etching area of ITO layer 6 can
See light transmission spectrum B5, the visible reflectance spectrum A6 of the non-etching area of ITO layer 6, the visible reflectance of the etching area of ITO layer 6
Spectrum B6, show that reflectivity, transmitance and color value see the table below by A5, B5, A6 and B6：
Table 5
From table 5, the shadow that originally disappears is anti-reflection, and transparent conductive film visible light wave range transmitance is all higher than 85%, and reflection differences are small
In 2, transmitted colors colour and reflection colour Se Zhi ∣ a*∣、∣b*∣ is respectively less than 0.5, aberration Δ a*、Δb*Also it is respectively less than 0.5.
Nb on substrate in the shadow transparent conductive film that disappears that will be prepared using conventional method2O5Layer thickness change to color L,
a*、b*SiN in the influence of value and the present embodimentxOyThe thickness change of layer is to color L, a*、b*The influence of value is compared, and is referred to down
Table：
Table 6
From table 6, Nb2O5Layer, SiNxOyWhen thickness degree changes ± 1nm respectively, the film prepared using conventional method
It is counter to penetrate Yan Se ∣ a*∣、∣b*∣ values are more than 1, and the counter of the anti-reflection transparent conductive film of the shadow that disappears of the present invention penetrates Yan Se ∣ a*∣、∣b*∣ value
Still less than 1.
From above example, substrate 1 is up with the increase of silicon oxynitride film thickness, near 380~650nm
In wavelength band, the reflectivity of the shadow that disappears is anti-reflection nesa coating is gradually reduced, and in 650~780nm wavelength bands, the shadow that disappears is anti-reflection
The reflectivity of nesa coating gradually rises；Substrate 1 is up with SiO2The increase of thicknesses of layers, the wave band near 380~450
In the range of, the reflectivity of the shadow that disappears is anti-reflection nesa coating gradually rises, and in 450~780nm wavelength bands, it is transparent that the shadow that disappears is anti-reflection
The reflectivity of conducting film is gradually reduced；Substrate 1 is down with the increase of silicon oxynitride film thickness, the wave band near 380~550
In the range of, the reflectivity of the shadow that disappears is anti-reflection nesa coating is gradually reduced, and in 550~780nm wavelength bands, it is transparent that the shadow that disappears is anti-reflection
The reflectivity of conducting film gradually rises；Substrate 1 is down with SiO2The increase of 6 thickness of layer, the wave band model near 380~400nm
In enclosing, the reflectivity of the shadow that disappears is anti-reflection nesa coating gradually rises, in 400~780nm wavelength bands, and the shadow that disappears is anti-reflection transparent to lead
The reflectivity of electrolemma is gradually reduced.It is final to cause surface resistance to be more than 85% for the transmitance of 60~200 Ω/ ITO layer, in D65
Color L, a under light conditions*、b*Film Tou She Zhi ∣ a in value*∣ and reflection Zhi ∣ b*∣ is less than 1, and color is in neutrality, and ITO
It is close with not by etching area aberration by etching area（Δa*、Δb*Respectively less than 1）.
As can be seen here, the anti-reflection transparent conductive film of the shadow that disappears of the invention uses SiNxOyLayer, can not only realize anti-reflection anti-reflection
Function, plays the anti-reflection effect of the shadow that disappears, and also reduces influence of the thicknesses of layers to membrane system color change, reduces to high index of refraction
Material film plating controls the required precision of technique so that the shadow effect that disappears is easier control, and reduces production cost.
The above described is only a preferred embodiment of the present invention, not making any formal limitation to the present invention；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible variations and modification to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention is done to above example
Any simple modification, equivalent substitution, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.
Claims (1)
1. the shadow that disappears is anti-reflection transparent conductive film, including substrate (1), it is characterised in that the top surface of the substrate (1) is up set successively
There are upper silicon oxynitride film (2) and upper SiO2Film layer (3), upper silicon oxynitride film (2) and upper SiO2Film layer (3) is constituted on one group
Composite film, substrate (1) top surface is at least provided with composite film on one group；The bottom surface of the substrate (1) is past successively to have lower nitrogen
Membranous layer of silicon oxide (4) and lower SiO2Film layer (5), lower silicon oxynitride film (4) and lower SiO2Film layer (5) constitutes composite membrane under one group
Layer, substrate (1) bottom surface is at least provided with composite film under one group；The outer film surface of the upper composite film and/or lower composite film is set
There is ITO layer (6)；The molecular formula of the silicon oxynitride is SiNxOy, wherein x, y is respectively the molal quantity of nitrogen, oxygen, 1≤x≤4/3,
0≤y≤1/3,x/y≥3；The thickness of the substrate (1) is 0.1~1.1mm, the thickness of upper silicon oxynitride film (2) for 15~
51nm, upper SiO2The thickness of film layer (3) is 30~34nm, and the thickness of lower silicon oxynitride film (4) is 10~80nm, lower SiO2Film
The thickness of layer (5) is 68~120nm, and the thickness of ITO layer (6) is 23~45nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510255236.4A CN104834424B (en) | 2015-05-19 | 2015-05-19 | The shadow that disappears is anti-reflection transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510255236.4A CN104834424B (en) | 2015-05-19 | 2015-05-19 | The shadow that disappears is anti-reflection transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104834424A CN104834424A (en) | 2015-08-12 |
| CN104834424B true CN104834424B (en) | 2017-08-18 |
Family
ID=53812351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510255236.4A Active CN104834424B (en) | 2015-05-19 | 2015-05-19 | The shadow that disappears is anti-reflection transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104834424B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929800A (en) * | 2017-04-24 | 2017-07-07 | 信利光电股份有限公司 | A kind of diamond-like carbon composite film and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105278024B (en) * | 2015-11-10 | 2019-01-04 | 深圳市华星光电技术有限公司 | Polarizer, liquid crystal display panel and liquid crystal display device |
| CN105398120A (en) * | 2015-11-13 | 2016-03-16 | 北京航玻新材料技术有限公司 | Disapparate permeability-improvement film, conductive film, conductive glass and touch screen |
| CN106587655A (en) * | 2017-01-23 | 2017-04-26 | 蚌埠玻璃工业设计研究院 | Shadow-eliminating and reflection-reducing conductive glass |
| CN108376041B (en) * | 2018-03-15 | 2021-01-22 | 京东方科技集团股份有限公司 | Touch module, OGS touch screen and electronic equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3378568B2 (en) * | 1998-06-19 | 2003-02-17 | 株式会社東芝 | Cathode ray tube and method of manufacturing the same |
-
2015
- 2015-05-19 CN CN201510255236.4A patent/CN104834424B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3378568B2 (en) * | 1998-06-19 | 2003-02-17 | 株式会社東芝 | Cathode ray tube and method of manufacturing the same |
Non-Patent Citations (2)
| Title |
|---|
| 吴浩然.单片硅基光电探测集成电路的设计与实现.《中国优秀硕士学位论文全文数据库信息科技辑》.2014,(第01期), * |
| 孟政等.消影透明导电薄膜的光学设计与制备.《硅酸盐通报》.2015,第34卷 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106929800A (en) * | 2017-04-24 | 2017-07-07 | 信利光电股份有限公司 | A kind of diamond-like carbon composite film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104834424A (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104834424B (en) | The shadow that disappears is anti-reflection transparent conductive film | |
| KR101221722B1 (en) | Conductive structure body and method for preparing the same | |
| KR101496567B1 (en) | Conductive structure body and method for manufacturing the same | |
| CN102909918B (en) | Two-side coated glass and preparation method thereof | |
| TWI522864B (en) | Touch panel and fabricating method thereof | |
| JP4532316B2 (en) | Touch panel | |
| JP5549216B2 (en) | Transparent conductive laminate, method for producing the same, and touch panel | |
| CN102194540B (en) | Transparent conductive lamination with reflected light adjusting layers | |
| TWI531939B (en) | Touch panels | |
| CN104602909A (en) | Metal structure and method for manufacturing same | |
| CN105398120A (en) | Disapparate permeability-improvement film, conductive film, conductive glass and touch screen | |
| CN106830708A (en) | Half-reflection and half-transmission glass with electro-magnetic screen function | |
| CN204894653U (en) | Antireflection coating and subtract reflection glass | |
| TW201108259A (en) | Film with color homogeneity | |
| CN106970439A (en) | Touch control display apparatus and contact panel | |
| CN103570254A (en) | Conductive glass, as well as preparation method and application thereof | |
| CN102012577B (en) | Membrane with uniform chroma | |
| CN103488369B (en) | Touch screen without chromatic aberration and method for manufacturing touch screen | |
| JP6086027B2 (en) | Cover glass and method of manufacturing cover glass | |
| CN104691040A (en) | Antireflection film and preparation method thereof as well as antireflection glass | |
| CN206607167U (en) | Half-reflection and half-transmission glass with electro-magnetic screen function | |
| TW201633081A (en) | Low chrominance touch control substrate | |
| CN106587655A (en) | Shadow-eliminating and reflection-reducing conductive glass | |
| TWI797421B (en) | A stacking structure for improving visual effect of single-layer touch sensing device and touch panel using same | |
| KR102350042B1 (en) | Conductive structure, Touch panel and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |