TW201322495A - Light-mixing multichip package structure - Google Patents

Abstract

A light-mixing multichip package structure includes a substrate unit, a light-emitting unit, a package unit, and a frame unit. The light-emitting unit includes a plurality of first light-emitting groups and a plurality of second light-emitting groups. The first light-emitting groups and the second light-emitting groups are electrically connected in series. Each first light-emitting group includes a plurality of first parallel connection units electrically connected in parallel, and each first parallel connection unit includes at least one blue LED chip. Each second light-emitting group includes at least one red LED chip. The package unit includes a phosphor resin body covering the first light-emitting groups and the second light-emitting groups. The frame unit includes a surrounding light-reflecting frame surrounding the first light-emitting groups, the second light-emitting groups, and the phosphor resin body.

Description

Mixed light polycrystalline package structure

The invention relates to a polycrystalline package structure, in particular to a light-mixing polycrystalline package structure.

Regarding the comparison between a light-emitting diode (LED) and a conventional light source, the light-emitting diode has a small volume, power saving, good luminous efficiency, long life, fast operation response, and no pollution of toxic substances such as heat radiation and mercury, etc. advantage. Therefore, in recent years, the application of light-emitting diodes has been extremely extensive. In the past, the brightness of the light-emitting diodes could not replace the traditional illumination source. However, with the continuous improvement of the technical field, high-power light-emitting diodes with high illumination brightness have been developed, which is sufficient to replace the traditional illumination source. However, the conventional light-emitting structures made using the light-emitting diodes have a situation in which color rendering and utilization are insufficient. Therefore, how to improve the color rendering and utilization of LEDs through the design of the structure has become an important issue that the business person wants to solve.

Embodiments of the present invention provide a hybrid optical polycrystalline package structure that can be used to increase LED color rendering and LED utilization.

A light-mixing polycrystalline package structure according to one embodiment of the present invention includes: a substrate unit, a light-emitting unit, a package unit, and a frame unit. The substrate unit includes a substrate body. The light-emitting unit includes a plurality of first light-emitting groups disposed on the substrate body and electrically connected to the substrate body, and a plurality of second light-emitting groups disposed on the substrate body and electrically connected to the substrate body, wherein the plurality of light-emitting units a light-emitting group is connected in series with the plurality of second light-emitting groups, each of the first light-emitting groups includes a plurality of first parallel units connected in parallel, each of the first parallel units including at least one blue light-emitting diode The body wafer, each of the second light-emitting groups includes at least one red light-emitting diode wafer. The package unit includes a phosphor colloid disposed on the substrate body to simultaneously cover the plurality of first light-emitting groups and the plurality of second light-emitting groups. The frame unit includes a surrounding reflective frame that is formed around the substrate body by a coating method, wherein the surrounding reflective frame simultaneously surrounds the plurality of first lighting groups, the plurality of second lighting groups, and Fluorescent colloid, and the fluorescent colloid contacts the surrounding reflective frame.

In summary, the polycrystalline package structure provided by the embodiment of the present invention is permeable to the plurality of first lighting groups and the plurality of second lighting groups in series, each of the first lighting groups includes a plurality of first parallel cells connected in parallel, and each of the second lighting groups includes a plurality of second parallel cells in parallel" design, such that the polycrystalline package structure of the present invention can be used to increase LED color rendering properties and LED utilization.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

[First Embodiment]

As shown in FIG. 1A to FIG. 1E , a first embodiment of the present invention provides a light-mixing polycrystalline package structure Z, which includes: a substrate unit 1 , an illumination unit 2 , a current limiting unit C1 , and a frame unit 3 . And a package unit 4.

First, the substrate unit 1 includes a substrate body 10, a first crystallized region 11 on the upper surface of the substrate body 10, and a second crystallized region 12 on the upper surface of the substrate body 10. For example, the substrate body 10 can include a circuit substrate 100, a heat dissipation layer 101 disposed on the bottom of the circuit substrate 100, a plurality of conductive pads 102 disposed on the upper surface of the circuit substrate 100, and a top surface disposed on the circuit substrate 100. And used to expose the insulating layer 103 of the plurality of conductive pads 102. Therefore, the heat dissipation layer 101 can be used to increase the heat dissipation performance of the circuit substrate 100, and the plurality of insulation layers 103 can be a solder resist layer that can be used to expose only the plurality of conductive pads 102 and reach a localized solder region. However, the above definition of the substrate body 10 is not intended to limit the invention.

The light-emitting unit 2 includes a plurality of first light-emitting groups 2A disposed on the substrate body 10 and electrically connected to the substrate body 10, and a plurality of second light-emitting groups 2A disposed on the substrate body 10 and electrically connected to the substrate body 10. Illumination group 2B. The plurality of first lighting groups 2A and the plurality of second lighting groups 2B are all disposed on the first crystallizing region 11 and connected in series. Each of the first lighting groups 2A includes a plurality of first parallel units 20A connected in parallel, and each of the first parallel units 20A includes at least one blue light emitting diode wafer 200A. Each of the second light-emitting groups 2B includes at least one red light-emitting diode wafer 200B. For example, the plurality of first lighting groups 2A and the plurality of second lighting groups 2B may be alternately connected in series, and the operating current of each of the first lighting groups 2A and each of the second lighting groups The operating current of 2B can be very similar. When each of the first parallel cells 20A uses a plurality of blue light emitting diode chips 200A, the number of blue light emitting diode chips 200A used in each of the first parallel cells 20A needs to be the same.

In addition, the current limiting unit C1 includes at least one current limiting wafer C10 electrically disposed on the second crystallizing region 12. Of course, the present invention can also use a plurality of current limiting wafers C10 electrically disposed on the second crystallizing region 12 in response to different current demands. The current limiting chip C10 can be electrically connected to the light emitting unit 2 to provide a specific and stable current for the light emitting unit 2. For example, the current limiting chip C10 can be electrically connected to the second crystallizing region 12 of the substrate unit 1 and electrically connected to a constant voltage source supplier S1 for supplying a constant voltage power supply. Between the light-emitting units 2 (as shown in Figure 1D). In other words, the designer can pre-plan a predetermined second crystallizing region 12 on the substrate unit 1 such that the current limiting wafer C10 can be electrically placed within the range defined by the second crystallizing region 12 of the substrate unit 1. . In addition, since the current limiting wafer C10 can serve as a bridge between the constant voltage source supplier S1 and the light emitting unit 2, the light emitting unit 2 can obtain a stable current supply from the constant voltage source supplier S1.

Furthermore, the present invention may further include a control unit 5 (shown in FIG. 1D) having at least one PWM control module 50 selectively coupled to the current limiting unit C1 (PWM is Pulse Width Modulation). The abbreviation of the transposition) is such that the current limiting unit C1 is electrically connected between the control unit 5 and the lighting unit 2, and of course the control unit 5 can also be omitted. For example, when the control unit 5 is electrically connected between the constant voltage source supply S1 and the current limiting unit C1, the current limiting unit C1 can be used to control the plurality of blue LED chips 200A and the plurality of red The LED chip 200B is used to generate a predetermined pulse frequency (e.g., 50 Hz, 60 Hz, ... 120 Hz, etc.).

In addition, the frame unit 3 includes a surrounding reflective frame 30 that is circumferentially formed on the upper surface of the substrate body 10 by a coating method, and a surrounding type that is circumferentially formed on the upper surface of the substrate body 10 by a coating method. The light-transmitting frame body 31, wherein the surrounding reflective frame body 30 surrounds the plurality of blue light-emitting diode chips 200A of the light-emitting unit 2 and the plurality of red light-emitting diode chips 200B to form a corresponding one of the first crystal-crystalline regions 11 The first colloidal limiting space 300 is disposed, and the surrounding opaque frame 31 surrounds the current limiting wafer C10 of the current limiting unit C1 to form a second colloidal limiting space 310 corresponding to the second crystallizing region 12. Further, the surrounding reflective frame body 30 and the surrounding opaque frame body 31 are separated from each other by a specific distance. The surrounding reflective frame body 30 has an engagement projection 3000 (or an engagement recess) formed by the above-described coating method, and the surrounding opaque frame 31 also has an engagement projection 3100 formed by the above coating method. (or an engagement recess), that is, when the surrounding reflective frame 30 and the surrounding opaque frame 31 are completed at the end of the forming process, the engaging projections (3000, 3100) are naturally generated.

For example, the manufacturing method of the surrounding reflective frame body 30 (or the surrounding opaque frame body 31) includes at least the following steps: (1) First, a liquid glue (not shown) is applied circumferentially. The upper surface of the substrate body 10, wherein the liquid glue can be randomly surrounded into a predetermined shape (for example, a circle, a square, a rectangle, etc.), and the thixotropic index of the liquid glue can be between 4 and 6. The pressure applied to the upper surface of the substrate body 10 may be between 350 and 450 kPa, and the speed at which the liquid glue is applied to the upper surface of the substrate body 10 may be between 5 and 15 mm/s, and The liquid material is circumferentially coated on the upper surface of the substrate body 10 at a position similar to the end point, so that the starting point and the end point have a colloidal appearance; (2) then resolidifying the liquid The glue material forms a surrounding reflective frame body 30, wherein the liquid glue material can be hardened by baking, the baking temperature can be between 120 and 140 degrees, and the baking time can be between 20 and 40 minutes. between. Therefore, the upper surface of the surrounding reflective frame body 30 can have a circular arc shape, and the angle θ of the circular tangential line T of the surrounding reflective frame body 30 relative to the upper surface of the substrate body 10 can be between 40 and 50 degrees. The height H of the top surface of the reflective frame body 30 relative to the upper surface of the substrate body 10 may be between 0.3 and 0.7 mm, and the width D of the bottom of the surrounding reflective frame body 30 may be between 1.5 and 3 mm. The haptic index of the frame 30 may be between 4 and 6, and the surrounding reflective frame 30 may be a white thermosetting reflective frame with a plurality of inorganic added particles mixed therein.

In addition, the package unit 4 includes a phosphor colloid 40 filled in the first colloidal limiting space 300 to cover the light emitting unit 2 and an opaque filled in the second colloidal limiting space 310 to cover the current limiting chip C10. Colloid 41. When the current limiting wafer C10 is covered by the opaque colloid 41, the current limiting wafer C10 can be prevented from being damaged by the irradiation of the light source. The fluorescent colloid 40 and the opaque colloid 41 are separated from each other by a certain distance, and the surrounding reflective frame 30 and the opaque colloid 41 are separated from each other by a specific distance. In other words, the package unit 4 includes a phosphor colloid 40 disposed on the substrate body 10 to simultaneously cover the plurality of first light-emitting groups 2A and the plurality of second light-emitting groups 2B. The surrounding reflective frame 30 can simultaneously surround The plurality of first light-emitting groups 2A, the plurality of second light-emitting groups 2B, and the fluorescent colloid 40, and the fluorescent colloid 40 contacts the surrounding reflective frame body 30. The current limiting wafer C10 is covered by the opaque colloid 41, and the current limiting wafer C10 and the opaque colloid 41 are surrounded by a surrounding opaque frame 31, and the opaque colloid 41 contacts the surrounding opaque frame. Body 31.

In addition, the substrate unit 1 of the first embodiment further includes at least one heat insulating slit 13 penetrating through the substrate body 10, and the heat insulating slit 13 may be located between the light emitting unit 2 and the current limiting unit C1 or in a surrounding reflective manner. The frame 30 is spaced between the surrounding opaque frame 31. Therefore, through the use of the heat insulating slit 13, the heat transfer path between the current limiting unit C1 and the light emitting unit 2 can be greatly reduced, so that the present invention can effectively slow down one or more current limiting chips C10 of the current limiting unit C1. The generated heat is conducted to the speed of the light emitting unit 2.

[Second embodiment]

Referring to FIG. 2, a second embodiment of the present invention provides a light mixing polycrystalline package structure. 2 and FIG. 1E, the greatest difference between the second embodiment of the present invention and the first embodiment is that each of the first light-emitting groups 2A includes at least one blue light-emitting diode wafer 200A. Each of the second lighting groups 2B includes a plurality of second parallel units 20B connected in parallel, and each of the second parallel units 20B includes at least one red light emitting diode wafer 200B. For example, the plurality of first lighting groups 2A and the plurality of second lighting groups 2B may be alternately connected in series, and the operating current of each of the first lighting groups 2A and each of the second lighting groups The operating current of 2B can be very similar. When each of the second parallel cells 20B uses a plurality of red light emitting diode chips 200B, the number of red light emitting diode chips 200B used in each of the second parallel cells 20B needs to be the same.

[Third embodiment]

Referring to FIG. 3, a third embodiment of the present invention provides a light mixing polycrystalline package structure. 3 and FIG. 1E (or FIG. 2), the greatest difference between the third embodiment of the present invention and the first (or second) embodiment is that each of the first lighting groups 2A includes a plurality of parallel groups. The first parallel unit 20A, and each of the first parallel units 20A includes at least one blue light emitting diode wafer 200A. Each of the second lighting groups 2B includes a plurality of second parallel units 20B connected in parallel, and each of the second parallel units 20B includes at least one red light emitting diode wafer 200B. For example, the plurality of first lighting groups 2A and the plurality of second lighting groups 2B may be alternately connected in series, and the operating current of each of the first lighting groups 2A and each of the second lighting groups The operating current of 2B can be very similar. When each of the first parallel cells 20A uses a plurality of blue light emitting diode chips 200A, the number of blue light emitting diode chips 200A used in each of the first parallel cells 20A needs to be the same. When each of the second parallel cells 20B uses a plurality of red light emitting diode chips 200B, the number of red light emitting diode chips 200B used in each of the second parallel cells 20B needs to be the same.

[Fourth embodiment]

Referring to FIG. 4A and FIG. 4B, a fourth embodiment of the present invention provides a light-mixing polycrystalline package structure Z. 4A is a comparison with FIG. 4B and FIG. 1B, the maximum difference between the fourth embodiment of the present invention and the first embodiment is that the substrate unit 1 of the fourth embodiment can omit the thermal insulation slit. 13 production. For example, when the current limiting unit C1 does not generate excessive heat, the solution of the fourth embodiment of the present invention can be considered.

[Fifth Embodiment]

Referring to FIGS. 5A and 4B, a fourth embodiment of the present invention provides a light-mixing polycrystalline package structure Z. 4A and FIG. 1B, the fourth embodiment of the present invention further includes: a bridge rectifier unit C2 including at least one disposed on the substrate body 10 and exposed Bridge rectifier C20. The current limiting chip C10 of the current limiting unit C1 is electrically connected between the light emitting unit 2 and the bridge rectifier C20 of the bridge rectifier unit C2, and the bridge rectifier C20 of the bridge rectifier unit C2 is electrically connected to the current limiting unit C1. The current limiting chip C10 is connected between an AC power source S2. For example, the current limiting unit C1 and the bridge rectifier unit C2 can be electrically connected between the alternating current power source S2 and the light emitting unit 2 by wire bonding (as shown in FIG. 5B). Since the bridge rectifier unit C2 can convert the AC power source S2 into a DC power source, and the current limiting unit C1 can limit the amount of DC current supplied to the light-emitting unit 2, the light-emitting unit 2 can obtain a stable DC current supply.

[Sixth embodiment]

Referring to FIG. 6, a sixth embodiment of the present invention provides a light mixing polycrystalline package structure. 6 and FIG. 5C, the greatest difference between the sixth embodiment and the fifth embodiment of the present invention is that each of the first light-emitting groups 2A includes at least one blue light-emitting diode wafer 200A. Each of the second lighting groups 2B includes a plurality of second parallel units 20B connected in parallel, and each of the second parallel units 20B includes at least one red light emitting diode wafer 200B. For example, the plurality of first lighting groups 2A and the plurality of second lighting groups 2B may be alternately connected in series, and the operating current of each of the first lighting groups 2A and each of the second lighting groups The operating current of 2B can be very similar. When each of the second parallel cells 20B uses a plurality of red light emitting diode chips 200B, the number of red light emitting diode chips 200B used in each of the second parallel cells 20B needs to be the same.

[Seventh embodiment]

Referring to FIG. 7, a seventh embodiment of the present invention provides a light mixing polycrystalline package structure. 7 and FIG. 5C (or FIG. 6), the greatest difference between the seventh embodiment and the fifth (or sixth) embodiment of the present invention is that each of the first lighting groups 2A includes a plurality of parallel groups. The first parallel unit 20A, and each of the first parallel units 20A includes at least one blue light emitting diode wafer 200A. Each of the second lighting groups 2B includes a plurality of second parallel units 20B connected in parallel, and each of the second parallel units 20B includes at least one red light emitting diode wafer 200B. For example, the plurality of first lighting groups 2A and the plurality of second lighting groups 2B may be alternately connected in series, and the operating current of each of the first lighting groups 2A and each of the second lighting groups The operating current of 2B can be very similar. When each of the first parallel cells 20A uses a plurality of blue light emitting diode chips 200A, the number of blue light emitting diode chips 200A used in each of the first parallel cells 20A needs to be the same. When each of the second parallel cells 20B uses a plurality of red light emitting diode chips 200B, the number of red light emitting diode chips 200B used in each of the second parallel cells 20B needs to be the same.

[Eighth Embodiment]

Referring to FIG. 8 , an eighth embodiment of the present invention provides a light mixing polycrystalline package structure. It can be seen from the comparison between FIG. 8 and FIG. 5A that the maximum difference between the eighth embodiment and the fifth embodiment of the present invention is that the current limiting chip C10 of the current limiting unit C1 and the bridge rectifier C20 of the bridge rectifier unit C2 can be simultaneously Covered by the transparent colloid 41, the current limiting chip C10, the bridge rectifier C20, and the opaque colloid 41 are surrounded by the surrounding opaque frame 31, and the opaque colloid 41 contacts the surrounding opaque frame. 31.

Ninth Embodiment

Referring to FIG. 9, a ninth embodiment of the present invention provides a light-mixing polycrystalline package structure. Each of the first lighting groups 2A used in the ninth embodiment includes a plurality of first parallel units 20A connected in parallel, and each of the first parallel units 20A includes at least one blue light emitting diode chip 200A and at least one Red light emitting diode chip 200B. In addition, each of the second lighting groups 2B used in the ninth embodiment includes a plurality of second parallel units 20B connected in parallel, and each of the second parallel units 20B includes at least one blue light emitting diode chip 200A and At least one red light emitting diode wafer 200B. For example, the operating current of each of the first lighting groups 2A and the operating current of each of the second lighting groups 2B may be very similar. When each of the first parallel cells 20A uses a plurality of blue light emitting diode chips 200A and a plurality of red light emitting diode chips 200B, each of the blue light emitting diode chips 200A used by the first parallel cells 20A The number needs to be the same, and the number of red LED chips 200B used in each of the first parallel units 20A needs to be the same. When each of the second parallel cells 20B uses a plurality of blue light emitting diode chips 200A and a plurality of red light emitting diode chips 200B, each of the blue light emitting diode chips 200A used by the second parallel cells 20B The number needs to be the same, and the number of red LED chips 200B used in each of the second parallel units 20B needs to be the same.

[First to Ninth Embodiments]

The first embodiment to the ninth embodiment, the substrate unit 1 includes a plurality of positive pads P disposed on the upper surface of the substrate body 10 and a plurality of upper surfaces disposed on the substrate body 10. Negative solder pad N. Each of the blue light emitting diode chips 200A has a positive electrode 201 and a negative electrode 202, and the positive electrode 201 of each of the blue light emitting diode chips 200A corresponds to at least two of the plurality of positive electrode pads P, and The negative electrode 201 of each of the blue light-emitting diode wafers 200A corresponds to at least two of the plurality of negative electrode pads N described above. In addition, each of the red LED chips 200B has a positive electrode 201 and a negative electrode 202, and the positive electrode 201 of each of the red light emitting diode chips 200B corresponds to at least two of the plurality of positive electrode pads P, each of which is red. The negative electrode 202 of the light emitting diode wafer 200B corresponds to at least two of the plurality of negative electrode pads N described above.

Furthermore, the present invention further includes a wire unit W including a plurality of first wires W1 and a plurality of second wires W2. Each of the two first wires W1 is electrically connected between one of the positive electrodes 201 of each corresponding blue light-emitting diode wafer 200A and one of the at least two corresponding positive electrode pads P. The connection between the negative electrode 202 of each corresponding blue light-emitting diode wafer 200A and one of the at least two corresponding negative electrode pads N is connected. Each of the two second wires W2 is electrically connected between the positive electrode 201 of each corresponding red LED chip 200B and one of the at least two corresponding positive electrode pads P, and is electrically connected to Between the negative electrode 202 of each corresponding red LED wafer 200B and one of the at least two corresponding negative electrode pads N described above.

Therefore, since the positive electrode 201 and the negative electrode 202 of each of the blue light-emitting diode chips 200A or the positive electrode 201 and the negative electrode 202 of each of the red light-emitting diode chips 200B have at least one spare positive electrode pad P and at least one standby negative electrode, respectively. Pad N, so when one end of the first wire W1 is hit (welded) on one of the positive pad P or the negative pad N (failure occurs, that is, the first wire W1 and the "positive pad" There is no electrical connection between the P or the negative electrode pad N", and the manufacturer does not need to remove the slag (or the slag on the surface of the negative electrode pad N) formed on the surface of the positive electrode pad P due to the failure of the wire bonding, One end of one wire W1 can be placed on the other positive electrode pad P (or another negative electrode pad N) to save the wire bonding time (increasing the efficiency of the wire bonding) and increase the wire bonding yield.

[Possible efficacy of the embodiment]

In summary, the polycrystalline package structure provided by the embodiment of the present invention is permeable to the plurality of first lighting groups and the plurality of second lighting groups in series, each of the first lighting groups includes a plurality of first parallel cells connected in parallel, and each of the second lighting groups includes a plurality of second parallel cells in parallel" design, such that the polycrystalline package structure of the present invention can be used to increase LED color rendering properties and LED utilization.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, equivalent technical changes that are made by the present invention and the contents of the drawings are included in the scope of the present invention.

S1. . . Constant voltage power supply

S2. . . AC power

Z. . . Polycrystalline package structure

1. . . Substrate unit

10. . . Substrate body

100. . . Circuit substrate

101. . . Heat sink

102. . . Conductive pad

P. . . Positive electrode pad

N. . . Negative electrode pad

103. . . Insulation

11. . . First crystal area

12. . . Second crystal area

13. . . Thermal insulation slit

2. . . Light unit

2A. . . First lighting group

20A. . . First parallel unit

200A. . . Blue light emitting diode chip

2B. . . Second lighting group

20B. . . Second parallel unit

200B. . . Red light emitting diode chip

201. . . positive electrode

202. . . negative electrode

3. . . Border unit

30. . . Surrounding reflective frame

T. . . Arc tangent

θ. . . angle

H. . . height

D. . . width

300. . . First colloid limit space

3000. . . Joint projection

31. . . Surrounding opaque frame

310. . . Second colloidal limit space

3100. . . Joint projection

4. . . Package unit

40. . . Fluorescent colloid

41. . . Opaque colloid

5. . . control unit

50. . . PWM control module

C1. . . Current limiting unit

C10. . . Current limiting chip

C2. . . Bridge rectifier unit

C20. . . Bridge rectifier

W. . . Wire unit

W1. . . First wire

W2. . . Second wire

1A is a perspective view of a first embodiment of the present invention.

Figure 1B is a side cross-sectional view showing the first embodiment of the present invention.

1C is a top plan view of a first embodiment of the present invention.

Figure 1D is a functional block diagram of a first embodiment of the present invention.

1E is a schematic circuit diagram of a first embodiment of the present invention.

2 is a circuit diagram of a second embodiment of the present invention.

Fig. 3 is a circuit diagram showing a third embodiment of the present invention.

4A is a top plan view of a fourth embodiment of the present invention.

4B is a side cross-sectional view showing a fourth embodiment of the present invention.

Fig. 5A is a top plan view showing a fifth embodiment of the present invention.

Figure 5B is a functional block diagram of a fifth embodiment of the present invention.

FIG. 5C is a schematic circuit diagram of a fifth embodiment of the present invention.

Figure 6 is a circuit diagram showing a sixth embodiment of the present invention.

Fig. 7 is a circuit diagram showing a seventh embodiment of the present invention.

Figure 8 is a top plan view of an eighth embodiment of the present invention.

FIG. 9 is a circuit diagram of a light emitting unit according to a ninth embodiment of the present invention.

Figure 10 is a partial top plan view of a plurality of spare pads using the present invention.

S1. . . Constant voltage power supply

2. . . Light unit

2A. . . First lighting group

20A. . . First parallel unit

200A. . . Blue light emitting diode chip

2B. . . Second lighting group

200B. . . Red light emitting diode chip

C1. . . Current limiting unit

Claims (21)

A light-mixing polycrystalline package structure comprising: a substrate unit comprising a substrate body; a light-emitting unit comprising a plurality of first light-emitting groups disposed on the substrate body and electrically connected to the substrate body And a plurality of second lighting groups disposed on the substrate body and electrically connected to the substrate body, wherein the plurality of first lighting groups are connected in series with the plurality of second lighting groups, each first The light-emitting group includes a plurality of first parallel cells connected in parallel, each of the first parallel cells includes at least one blue light-emitting diode chip, and each of the second light-emitting groups includes at least one red light-emitting diode chip; The package unit includes a phosphor colloid disposed on the substrate body to cover the plurality of first light-emitting groups and the plurality of second light-emitting groups simultaneously, and a frame unit including a through-coating method a surrounding reflective frame formed on the substrate body, wherein the surrounding reflective frame simultaneously surrounds the plurality of first lighting groups, the plurality of second lighting groups, and Light colloid, and the colloid contacting the fluorescent reflector housing surrounding the formula. The light-mixing polycrystalline package structure according to claim 1, wherein the plurality of first light-emitting groups and the plurality of second light-emitting groups are alternately connected in series, and each of the first parallel units is used. The number of blue light-emitting diode chips is the same, and the operating current of each first light-emitting group is similar to the operating current of each second light-emitting group. The light-mixing polycrystalline package structure according to claim 1, wherein the surrounding reflective frame has an engaging convex portion formed by the coating method, and the upper surface of the surrounding reflective frame is a a circular arc shape, the angle of the surrounding reflective frame relative to the arc of the upper surface of the substrate body is between 40 and 50 degrees, and the height of the top surface of the surrounding reflective frame relative to the upper surface of the substrate body is Between 0.3 and 0.7 mm, the width of the bottom of the surrounding reflective frame is between 1.5 and 3 mm, and the surrounding reflective frame has a thixotropic index between 4 and 6, and the surrounding reflective frame The body is a white thermosetting reflective frame body in which a plurality of inorganic added particles are mixed. The light-mixing polycrystalline package structure of claim 1, wherein the substrate unit comprises a plurality of positive electrode pads disposed on an upper surface of the substrate body and a plurality of negative electrode pads disposed on an upper surface of the substrate body. Each of the blue light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the blue light emitting diode chips corresponds to at least two of the plurality of positive electrode pads, each of the blue light emitting diodes The negative electrode of the bulk wafer corresponds to at least two of the plurality of negative electrode pads, wherein each of the red light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the red light emitting diode chips corresponds to the plurality of positive electrodes At least two of the pads, the negative electrode of each of the red light emitting diode chips corresponds to at least two of the plurality of negative electrode pads. The light-mixing polycrystalline package structure of claim 4, further comprising: a wire unit comprising a plurality of first wires and a plurality of second wires, wherein each of the two first wires is electrically Connecting a positive electrode of each corresponding blue light emitting diode chip to one of the at least two corresponding positive electrode pads and electrically connecting to each corresponding blue light emitting diode chip Between the negative electrode and one of the at least two corresponding negative electrode pads, wherein each of the two second wires is electrically connected to the positive electrode of each corresponding red light emitting diode chip and the at least two One of the corresponding positive electrode pads is electrically connected between one of the negative electrodes of each corresponding red light emitting diode chip and one of the at least two corresponding negative electrode pads. The light-mixing polycrystalline package structure of claim 1, further comprising: a current limiting unit, comprising at least one disposed on the substrate body and electrically connected to the light emitting unit and a certain voltage power source; The current limiting chip, wherein the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by a opaque frame around. The light-mixing polycrystalline package structure of claim 1, further comprising: a current limiting unit and a bridge rectifier unit, wherein the current limiting unit comprises at least one current limiting chip disposed on the substrate body The bridge rectifier unit includes at least one bridge rectifier disposed on the substrate body, the at least one current limiting chip is electrically connected between the light emitting unit and the at least one bridge rectifier, and the at least one bridge rectifier is electrically connected Between the at least one current limiting chip and an AC power source, the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by The opaque frame is surrounded by. A light-mixing polycrystalline package structure comprising: a substrate unit comprising a substrate body; a light-emitting unit comprising a plurality of first light-emitting groups disposed on the substrate body and electrically connected to the substrate body And a plurality of second lighting groups disposed on the substrate body and electrically connected to the substrate body, wherein the plurality of first lighting groups are connected in series with the plurality of second lighting groups, each first The light emitting group includes at least one blue light emitting diode chip, each of the second light emitting groups includes a plurality of second parallel cells connected in parallel, each of the second parallel cells including at least one red light emitting diode chip; The package unit includes a phosphor colloid disposed on the substrate body to cover the plurality of first light-emitting groups and the plurality of second light-emitting groups simultaneously, and a frame unit including a through-coating method a surrounding reflective frame formed on the substrate body, wherein the surrounding reflective frame simultaneously surrounds the plurality of first lighting groups, the plurality of second lighting groups, and Light colloid, and the colloid contacting the fluorescent reflector housing surrounding the formula. The light-mixing polycrystalline package structure according to claim 8, wherein the plurality of first light-emitting groups and the plurality of second light-emitting groups are alternately connected in series, and each of the second parallel units is used. The number of red light-emitting diode chips is the same, and the operating current of each first light-emitting group is close to the operating current of each second light-emitting group. The light-mixing polycrystalline package structure according to claim 8, wherein the surrounding reflective frame has an engaging convex portion formed by the coating method, and the upper surface of the surrounding reflective frame is a a circular arc shape, the angle of the surrounding reflective frame relative to the arc of the upper surface of the substrate body is between 40 and 50 degrees, and the height of the top surface of the surrounding reflective frame relative to the upper surface of the substrate body is Between 0.3 and 0.7 mm, the width of the bottom of the surrounding reflective frame is between 1.5 and 3 mm, and the surrounding reflective frame has a thixotropic index between 4 and 6, and the surrounding reflective frame The body is a white thermosetting reflective frame body in which a plurality of inorganic added particles are mixed. The light-mixing polycrystalline package structure according to claim 8 , wherein the substrate unit comprises a plurality of positive electrode pads disposed on an upper surface of the substrate body and a plurality of negative electrode pads disposed on an upper surface of the substrate body Each of the blue light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the blue light emitting diode chips corresponds to at least two of the plurality of positive electrode pads, each of the blue light emitting diodes The negative electrode of the bulk wafer corresponds to at least two of the plurality of negative electrode pads, wherein each of the red light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the red light emitting diode chips corresponds to the plurality of positive electrodes At least two of the pads, the negative electrode of each of the red light emitting diode chips corresponds to at least two of the plurality of negative electrode pads. The light-mixing polycrystalline package structure of claim 11, further comprising: a wire unit comprising a plurality of first wires and a plurality of second wires, wherein each of the two first wires is electrically Connecting a positive electrode of each corresponding blue light emitting diode chip to one of the at least two corresponding positive electrode pads and electrically connecting to each corresponding blue light emitting diode chip Between the negative electrode and one of the at least two corresponding negative electrode pads, wherein each of the two second wires is electrically connected to the positive electrode of each corresponding red light emitting diode chip and the at least two One of the corresponding positive electrode pads is electrically connected between one of the negative electrodes of each corresponding red light emitting diode chip and one of the at least two corresponding negative electrode pads. The light-mixing polycrystalline package structure of claim 8, further comprising: a current limiting unit, comprising at least one disposed on the substrate body and electrically connected to the light emitting unit and a certain voltage power source; The current limiting chip, wherein the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by a opaque frame around. The light-mixing polycrystalline package structure of claim 8, further comprising: a current limiting unit and a bridge rectifier unit, wherein the current limiting unit comprises at least one current limiting chip disposed on the substrate body The bridge rectifier unit includes at least one bridge rectifier disposed on the substrate body, the at least one current limiting chip is electrically connected between the light emitting unit and the at least one bridge rectifier, and the at least one bridge rectifier is electrically connected Between the at least one current limiting chip and an AC power source, the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by The opaque frame is surrounded by. A light-mixing polycrystalline package structure comprising: a substrate unit comprising a substrate body; a light-emitting unit comprising a plurality of first light-emitting groups disposed on the substrate body and electrically connected to the substrate body And a plurality of second lighting groups disposed on the substrate body and electrically connected to the substrate body, wherein the plurality of first lighting groups are connected in series with the plurality of second lighting groups, each first The illumination group includes a plurality of first parallel units connected in parallel, each of the first parallel units including at least one blue light emitting diode chip, and each of the second light emitting groups includes a plurality of second parallel units connected in parallel Each of the second parallel units includes at least one red light emitting diode chip; a package unit including a substrate disposed on the substrate body to simultaneously cover the plurality of first light emitting groups and the plurality of second light emitting groups a phosphor colloid; and a bezel unit comprising a surrounding reflective frame that is formed around the substrate body by a coating method, wherein the surrounding reflective frame is the same About said plurality of first light emitting group, the plurality of second light emitting group, and the fluorescent colloid, and the colloid contacting the fluorescent reflector housing surrounding the formula. The light-mixing polycrystalline package structure according to claim 15, wherein the plurality of first light-emitting groups and the plurality of second light-emitting groups are alternately connected in series, and each of the first parallel units is used. The number of blue light-emitting diode chips is the same, and the operating current of each first light-emitting group is similar to the operating current of each second light-emitting group. The light-mixing polycrystalline package structure according to claim 15, wherein the surrounding reflective frame has an engaging convex portion formed by the coating method, and the upper surface of the surrounding reflective frame is a a circular arc shape, the angle of the surrounding reflective frame relative to the arc of the upper surface of the substrate body is between 40 and 50 degrees, and the height of the top surface of the surrounding reflective frame relative to the upper surface of the substrate body is Between 0.3 and 0.7 mm, the width of the bottom of the surrounding reflective frame is between 1.5 and 3 mm, and the surrounding reflective frame has a thixotropic index between 4 and 6, and the surrounding reflective frame The body is a white thermosetting reflective frame body in which a plurality of inorganic added particles are mixed. The light-mixing polycrystalline package structure of claim 15, wherein the substrate unit comprises a plurality of positive electrode pads disposed on an upper surface of the substrate body and a plurality of negative electrode pads disposed on an upper surface of the substrate body Each of the blue light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the blue light emitting diode chips corresponds to at least two of the plurality of positive electrode pads, each of the blue light emitting diodes The negative electrode of the bulk wafer corresponds to at least two of the plurality of negative electrode pads, wherein each of the red light emitting diode chips has a positive electrode and a negative electrode, and a positive electrode of each of the red light emitting diode chips corresponds to the plurality of positive electrodes At least two of the pads, the negative electrode of each of the red light emitting diode chips corresponds to at least two of the plurality of negative electrode pads. The light-mixing polycrystalline package structure of claim 18, further comprising: a wire unit comprising a plurality of first wires and a plurality of second wires, wherein each of the two first wires is electrically Connecting a positive electrode of each corresponding blue light emitting diode chip to one of the at least two corresponding positive electrode pads and electrically connecting to each corresponding blue light emitting diode chip Between the negative electrode and one of the at least two corresponding negative electrode pads, wherein each of the two second wires is electrically connected to the positive electrode of each corresponding red light emitting diode chip and the at least two One of the corresponding positive electrode pads is electrically connected between one of the negative electrodes of each corresponding red light emitting diode chip and one of the at least two corresponding negative electrode pads. The light-mixing polycrystalline package structure of claim 15, further comprising: a current limiting unit, comprising at least one disposed on the substrate body and electrically connected to the light emitting unit and a certain voltage power source The current limiting chip, wherein the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by a opaque frame around. The light-mixing polycrystalline package structure of claim 15, further comprising: a current limiting unit and a bridge rectifier unit, wherein the current limiting unit comprises at least one current limiting chip disposed on the substrate body The bridge rectifier unit includes at least one bridge rectifier disposed on the substrate body, the at least one current limiting chip is electrically connected between the light emitting unit and the at least one bridge rectifier, and the at least one bridge rectifier is electrically connected Between the at least one current limiting chip and an AC power source, the at least one current limiting chip is covered by an opaque encapsulant, and the at least one current limiting chip and the surrounding opaque frame are surrounded by The opaque frame is surrounded by.