TW201321899A - Positive photosensitive composition - Google Patents

Positive photosensitive composition Download PDF

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TW201321899A
TW201321899A TW101139960A TW101139960A TW201321899A TW 201321899 A TW201321899 A TW 201321899A TW 101139960 A TW101139960 A TW 101139960A TW 101139960 A TW101139960 A TW 101139960A TW 201321899 A TW201321899 A TW 201321899A
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polymerizable monomer
photosensitive composition
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positive photosensitive
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TWI554833B (en
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Yuuki Kimura
Yoshitaka Kobayashi
Tomohiro Eto
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Jnc Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C08F230/085Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/0285Silver salts, e.g. a latent silver salt image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

A positive photosensitive composition, which has high sensitivity and does not require baking after exposure, is provided and is useful for forming a patterned transparent film obtained through developing by an alkali aqueous solution. The positive photosensitive composition contains a polymer (A), a photo-acid generator (B), and an organic solvent (C), wherein the polymer (A) is formed by radical polymerizing a radical polymerizable monomer having an alkoxysilyl group (a1), a radical polymerizable monomer having an acidic group (a2), and a radical polymerizable monomer (a3) other than (a2) and (a1).

Description

正型感光性組成物 Positive photosensitive composition

本發明是有關於一種於抗蝕劑(resist)領域等中可利用的正型感光性組成物。 The present invention relates to a positive photosensitive composition which can be utilized in the field of a resist or the like.

經圖案化的透明膜被用於間隔件(spacer)、絕緣膜、保護膜等顯示元件的許多領域中,迄今為止,於此用途中已提出了大量的正型感光性組成物(例如參照專利文獻1~專利文獻3)。 The patterned transparent film is used in many fields of display elements such as spacers, insulating films, protective films, etc. Up to now, a large number of positive photosensitive compositions have been proposed in this application (for example, reference patents) Document 1 to Patent Document 3).

通常,於薄膜電晶體型液晶顯示元件或固體攝像元件等電子零件中,為了將以層狀配置的配線之間絕緣而設有絕緣膜。作為形成絕緣膜的材料,廣泛使用正型感光性組成物,該正型感光性組成物的用以獲得必要圖案形狀的絕緣膜的步驟數少。正型感光性組成物必須於形成絕緣膜的過程中具有廣的製程容限(process margin)。進而,使用正型感光性組成物的絕緣膜或顯示元件有時於絕緣膜形成後的後步驟(氧化銦錫(Indium Tin Oxide,ITO)成膜、濕式蝕刻、配向膜成膜等)中,藉由浸漬等而與溶劑、酸、鹼性溶液等接觸,及進行熱處理,故必須具有對該些處理的耐性。另外,對於液晶顯示器等顯示元件中所用的絕緣膜,要求對可見光的高透明性。 In general, in an electronic component such as a thin film transistor type liquid crystal display element or a solid-state image sensor, an insulating film is provided in order to insulate wirings arranged in a layer. As a material for forming an insulating film, a positive photosensitive composition is widely used, and the number of steps of obtaining an insulating film having a necessary pattern shape of the positive photosensitive composition is small. The positive photosensitive composition must have a wide process margin in the process of forming the insulating film. Further, the insulating film or the display element using the positive photosensitive composition may be in a subsequent step after the formation of the insulating film (indium tin oxide (ITO) film formation, wet etching, alignment film formation, etc.) It is necessary to have resistance to these treatments by contact with a solvent, an acid, an alkaline solution or the like by immersion or the like and heat treatment. Further, for an insulating film used in a display element such as a liquid crystal display, high transparency to visible light is required.

另外,於近年來的液晶顯示器等顯示元件中所用的感光性絕緣膜的用途中,伴隨著母玻璃(mother glass)尺寸的進一步的巨大化,為了確保生產性而迫切需要縮短感光性材料的一系列製程所耗費的時間(生產時間(tack time))。 In addition, in the use of the photosensitive insulating film used for a display element such as a liquid crystal display in recent years, the size of the mother glass is further increased, and in order to ensure productivity, it is urgent to shorten the photosensitive material. Time spent on series process (production time (tack Time)).

已提出了應用於該些用途中的高感度的正型感光性組成物,例如專利文獻4揭示有一種抗蝕劑,該抗蝕劑含有具有羧酸的第三丁基酯基或苯酚的第三丁基碳酸基的聚合物與光酸產生劑。聚合物中的第三丁基酯基或第三丁基碳酸基藉由曝光時所產生的酸及曝光後的燒製(曝光後烘烤(Post Exposure Bake,PEB))而被脫保護,轉變成羧基或酚性OH等酸性基。結果,抗蝕劑膜的曝光部分於鹼性顯影液中溶解。然而,此種系的情況下有以下問題:曝光後必需PEB步驟,雖然於曝光量的方面而言為高感度,但結果製程的總的生產時間並未縮短。 A high-sensitivity positive photosensitive composition for use in such applications has been proposed. For example, Patent Document 4 discloses a resist containing a third butyl ester group having a carboxylic acid or a phenol. Tributyl carbonate based polymer with photoacid generator. The third butyl ester group or the third butyl carbonate group in the polymer is deprotected by the acid generated during exposure and the post-exposure firing (Post Exposure Bake (PEB)). An acidic group such as a carboxyl group or a phenolic OH. As a result, the exposed portion of the resist film was dissolved in the alkaline developing solution. However, in the case of such a system, there is a problem that the PEB step is necessary after the exposure, and although it is high in sensitivity in terms of the amount of exposure, the total production time of the resulting process is not shortened.

另一方面,於專利文獻5中,記載有一種含有含烷氧基矽烷的乙烯基系共聚物與硬化觸媒的正型抗蝕劑組成物,且記載有如下例子:作為該共聚物的單體成分而記載有含烷氧基矽烷基的丙烯酸酯、甲基丙烯酸酯或α-鹵素取代丙烯酸酯,並且使用鹽酸作為硬化觸媒。 On the other hand, Patent Document 5 describes a positive resist composition containing an alkoxydecane-containing vinyl-based copolymer and a curing catalyst, and an example of the following is described: The alkoxyalkyl group-containing acrylate, methacrylate or α-halogen-substituted acrylate is described as a body component, and hydrochloric acid is used as a curing catalyst.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開昭51-34711號公報 [Patent Document 1] Japanese Patent Laid-Open No. 51-34711

[專利文獻2]日本專利特開昭56-122031號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. SHO 56-122031

[專利文獻3]日本專利特開平5-165214號公報 [Patent Document 3] Japanese Patent Laid-Open No. Hei 5-165214

[專利文獻4]日本專利特公平2-27660號公報 [Patent Document 4] Japanese Patent Special Fair No. 2-27660

[專利文獻5]日本專利特開2002-196494號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2002-196494

本發明提供一種正型感光性組成物,其為高感度且無 需曝光後燒製,可形成經圖案化的透明膜(圖案狀透明膜)。 The present invention provides a positive photosensitive composition which is highly sensitive and has no After exposure and firing, a patterned transparent film (patterned transparent film) can be formed.

本發明者發現,藉由以下的正型感光性組成物可解決上述課題,並根據該發現而完成了本發明,上述正型感光性組成物含有聚合物(A)、光酸產生劑(B)及有機溶劑(C),上述聚合物(A)是將具有烷氧基矽烷(alkoxysilyl)基的自由基聚合性單體(a1)、具有酸性基的自由基聚合性單體(a2)及(a1)與(a2)以外的自由基聚合性單體(a3)進行自由基共聚合而成。本發明包括以下之項。 The inventors of the present invention have found that the above problems can be solved by the following positive photosensitive composition, and the positive photosensitive composition contains the polymer (A) and the photoacid generator (B). And the organic solvent (C), the polymer (A) is a radical polymerizable monomer (a1) having an alkoxysilyl group, a radical polymerizable monomer (a2) having an acidic group, and (a1) is a radical copolymerization of the radically polymerizable monomer (a3) other than (a2). The invention includes the following items.

<1>一種正型感光性組成物,其含有聚合物(A)、光酸產生劑(B)及有機溶劑(C),上述聚合物(A)是將具有烷氧基矽烷基的自由基聚合性單體(a1)、具有酸性基的自由基聚合性單體(a2)、以及(a1)與(a2)以外的自由基聚合性單體(a3)進行自由基共聚合而成。 <1> A positive photosensitive composition comprising a polymer (A), a photoacid generator (B), and an organic solvent (C), wherein the polymer (A) is a radical having an alkoxyalkyl group The polymerizable monomer (a1), the radically polymerizable monomer (a2) having an acidic group, and the radically polymerizable monomer (a3) other than (a2) (a1) are radically copolymerized.

<2>如<1>所記載之正型感光性組成物,其中上述具有烷氧基矽烷基的自由基聚合性單體(a1)為下述通式(I)、通式(II)及通式(III)所表示的化合物的一種以上, [化2] (式中,R1為氫或任意的氫可經氟取代的碳數1~5的烷基,R2~R10分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、直鏈或分支的碳數1~20的烷基或碳數1~5的烷氧基,R2~R10的烷基中的任意的-CH2-可經-COO-、-OCO-、-CO-或-O-取代,另外任意的氫可經鹵素取代,其中,R2~R4的至少一個為碳數1~5的烷氧基,R5~R7的至少一個為碳數1~5的烷氧基,R8~R10的至少一個為碳數1~5的烷氧基;式(I)中,n為1~5)。 <2> The positive photosensitive composition of the above-mentioned <1>, wherein the radically polymerizable monomer (a1) having an alkoxyalkylalkyl group is represented by the following formula (I), formula (II) and One or more compounds represented by the formula (III), [Chemical 2] (wherein R 1 is hydrogen or any hydrogen having 1 to 5 carbon atoms which may be substituted by fluorine, and R 2 to R 10 are each independently hydrogen, halogen, -CN, -CF 3 , -OCF 3 , -OH a straight or branched carbon number of 1 to 20 or an alkoxy group having 1 to 5 carbon atoms, and any -CH 2 - of the alkyl group of R 2 to R 10 may be -COO-, -OCO- And -CO- or -O-substituted, and any hydrogen may be substituted by halogen, wherein at least one of R 2 to R 4 is an alkoxy group having 1 to 5 carbon atoms, and at least one of R 5 to R 7 is carbon The alkoxy group having 1 to 5 atoms, at least one of R 8 to R 10 is an alkoxy group having 1 to 5 carbon atoms; and in the formula (I), n is 1 to 5).

<3>如<1>或<2>所記載之正型感光性組成物,其中上述具有酸性基的自由基聚合性單體(a2)為選自具有酚性OH的自由基聚合性單體、具有不飽和羧酸的自由基聚合性單體、具有不飽和羧酸酐的自由基聚合性單體中的自由基聚合性單體的一種以上。 <3> The positive photosensitive composition as described in <1>, wherein the radically polymerizable monomer (a2) having an acidic group is selected from a radically polymerizable monomer having a phenolic OH. One or more kinds of radical polymerizable monomers having a radically polymerizable monomer having an unsaturated carboxylic acid and a radical polymerizable monomer having an unsaturated carboxylic acid anhydride.

<4>如<1>至<3>中任一項所記載之正型感光性組成物,其中上述具有酸性基的自由基聚合性單體(a2) 包含下述通式(IV)所表示的具有酚性OH的自由基聚合性單體, (式中,R11、R12及R13分別為氫或任意的氫可經氟取代的碳數1~3的烷基,R14、R15、R16、R17及R18分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、碳數1~5的烷基或碳數1~5的烷氧基,R14、R15、R16、R17及R18的烷基中的任意的-CH2-可經-COO-、-OCO-或-CO-取代,R14、R15、R16、R17及R18的烷基及烷氧基中的任意的氫可經鹵素取代,其中R14~R18中的至少一個為-OH)。 The positive photosensitive composition as described in any one of <1> to <3>, wherein the radically polymerizable monomer (a2) having an acidic group is represented by the following formula (IV) a radically polymerizable monomer having a phenolic OH, (wherein R 11 , R 12 and R 13 are each hydrogen or an arbitrary alkyl group having 1 to 3 carbon atoms which may be substituted by fluorine, and R 14 , R 15 , R 16 , R 17 and R 18 are each hydrogen; , halogen, -CN, -CF 3 , -OCF 3 , -OH, an alkyl group having 1 to 5 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, R 14 , R 15 , R 16 , R 17 and R 18 Any of -CH 2 - in the alkyl group may be substituted by -COO-, -OCO- or -CO-, any of alkyl and alkoxy groups of R 14 , R 15 , R 16 , R 17 and R 18 The hydrogen may be substituted by a halogen, wherein at least one of R 14 to R 18 is -OH).

<5>如<1>至<4>中任一項所記載之正型感光性組成物,其中上述自由基聚合性單體(a3)為具有環氧基的自由基聚合性單體。 The positive-type photosensitive composition of any one of the above-mentioned radically polymerizable monomers (a3) is a radically polymerizable monomer which has an epoxy group.

<6>如<1>至<5>中任一項所記載之正型感光性組成物,其中上述有機溶劑(C)為具有羥基的溶劑。 The positive photosensitive composition as described in any one of <1> to <5>, wherein the said organic solvent (C) is a solvent which has a hydroxyl group.

<7>一種圖案狀透明膜,其是藉由如<1>至<6>中任一項所記載之正型感光性組成物的塗膜的曝光、顯影及燒製而形成。 <7> A pattern-like transparent film which is formed by exposure, development, and baking of a coating film of a positive photosensitive composition as described in any one of <1> to <6>.

<8>一種絕緣膜,其使用如<7>所記載之圖案狀透 明膜。 <8> An insulating film which uses a pattern as described in <7> Bright film.

<9>一種顯示元件,其具有如<7>或<8>所記載之圖案狀透明膜。 <9> A display element having a patterned transparent film as described in <7> or <8>.

本發明提供一種正型感光性組成物,其含有上述特定的聚合物(A)、光酸產生劑(B)及有機溶劑(C),故為高感度且無需曝光後燒製,而且可形成透明性優異的圖案狀透明膜。 The present invention provides a positive photosensitive composition comprising the above specific polymer (A), photoacid generator (B) and organic solvent (C), so that it is highly sensitive and does not need to be fired after exposure, and can be formed. A pattern-like transparent film excellent in transparency.

<1.本發明的感光性組成物> <1. Photosensitive composition of the present invention>

本發明的感光性組成物含有聚合物(A)、光酸產生劑(B)及有機溶劑(C),上述聚合物(A)是將具有烷氧基矽烷基的自由基聚合性單體(a1)、具有酸性基的自由基聚合性單體(a2)、以及其他自由基聚合性單體(a3)自由基聚合而成。聚合物(A)可使用一種聚合物,亦可混合使用兩種以上的聚合物。另外,光酸產生劑(B)亦是可使用一種亦可混合使用兩種以上,有機溶劑(C)亦是可使用一種亦可混合使用兩種以上。 The photosensitive composition of the present invention contains a polymer (A), a photoacid generator (B), and an organic solvent (C), and the polymer (A) is a radical polymerizable monomer having an alkoxyalkyl group ( A1) A radically polymerizable monomer (a2) having an acidic group and a radical polymerizable monomer (a3) are radically polymerized. One type of polymer may be used for the polymer (A), or two or more types of polymers may be used in combination. In addition, the photo-acid generator (B) may be used singly or in combination of two or more kinds, and the organic solvent (C) may be used alone or in combination of two or more.

僅含有將具有烷氧基矽烷基的自由基聚合性單體(a1)聚合而成的聚合物與光酸產生劑(B)的組成物雖可藉由曝光、鹼顯影而大體上圖案化,但為了對所形成的圖案狀透明膜賦予必需的感度、透明性、耐化學品性(酸、鹼、有機溶劑)、耐濺鍍性、低介電常數性、可靠性等各種功能,實際上亦必須將具有酸性基的單體(a2)以及(a1)及(a2)以外的單體(a3)共聚合。 The composition containing only the polymer obtained by polymerizing the radically polymerizable monomer (a1) having an alkoxyalkyl group and the photoacid generator (B) can be substantially patterned by exposure or alkali development. However, in order to impart various functions such as sensitivity, transparency, chemical resistance (acid, alkali, organic solvent), sputtering resistance, low dielectric constant, and reliability to the formed pattern-like transparent film, actually It is also necessary to copolymerize the monomer (a2) having an acidic group and the monomer (a3) other than (a1) and (a2).

<1-1.本發明的聚合物(A)> <1-1. Polymer (A) of the present invention>

本發明的聚合物(A)是將具有烷氧基矽烷基的自由基聚合性單體(a1)、具有酸性基的自由基聚合性單體(a2)以及(a1)及(a2)以外的自由基聚合性單體(a3)聚合而獲得的共聚物。 The polymer (A) of the present invention is a radical polymerizable monomer (a1) having an alkoxyalkyl group, a radical polymerizable monomer (a2) having an acidic group, and (a1) and (a2). A copolymer obtained by polymerizing a radical polymerizable monomer (a3).

上述聚合物(A)中,作為自由基聚合性單體(a1)、自由基聚合性單體(a2)、自由基聚合性單體(a3),不僅可分別使用單獨一種自由基聚合性單體,亦可分別使用多種自由基聚合性單體。 In the polymer (A), as the radical polymerizable monomer (a1), the radical polymerizable monomer (a2), and the radical polymerizable monomer (a3), a single radical polymerizable single can be used. A plurality of radical polymerizable monomers can also be used separately.

於上述聚合物(A)中,相對於所有單體的合計重量,自由基聚合性單體(a1)較佳為以5重量%~50重量%的比例而使用,更佳為以10重量%~40重量%的比例而使用。若以此種範圍含有單體(a1),則就感度、透明性、基板密接性、顯影穩定性、作為溶液的保存穩定性的觀點而言較佳。 In the above polymer (A), the radical polymerizable monomer (a1) is preferably used in a proportion of 5% by weight to 50% by weight, more preferably 10% by weight based on the total weight of all the monomers. Use at a ratio of ~40% by weight. When the monomer (a1) is contained in such a range, it is preferable from the viewpoints of sensitivity, transparency, substrate adhesion, development stability, and storage stability of the solution.

另外,於上述聚合物(A)中,相對於所有單體的合計重量,自由基聚合性單體(a2)較佳為以1重量%~20重量%的比例而使用,更佳為以5重量%~15重量%的比例而使用。若以此種範圍含有單體(a2),則就對鹼性顯影液的溶解性的觀點而言較佳。 Further, in the above polymer (A), the radical polymerizable monomer (a2) is preferably used in a proportion of from 1% by weight to 20% by weight based on the total weight of all the monomers, more preferably 5 parts by weight. It is used in a ratio of % by weight to 15% by weight. When the monomer (a2) is contained in such a range, it is preferable from the viewpoint of the solubility of the alkaline developer.

進而,於上述聚合物(A)中,相對於所有單體的合計重量,自由基聚合性單體(a3)較佳為以30重量%~94重量%的比例而使用,更佳為以40重量%~80重量%的比例而使用。 Further, in the polymer (A), the radical polymerizable monomer (a3) is preferably used in a proportion of 30% by weight to 94% by weight, more preferably 40%, based on the total weight of all the monomers. It is used in a ratio of % by weight to 80% by weight.

若以此種範圍含有單體(a3),則就顯影性、低介電性、 耐化學品性的觀點而言較佳。 When the monomer (a3) is contained in such a range, developability, low dielectric property, It is preferable from the viewpoint of chemical resistance.

<1-1-1.具有烷氧基矽烷基的自由基聚合性單體(a1)> <1-1-1. Radical Polymerizable Monomer (a1) having an alkoxyalkylalkyl group>

具有烷氧基矽烷基的自由基聚合性單體(a1)可選自下述通式(I)、通式(II)及通式(III)所表示的化合物中。 The radically polymerizable monomer (a1) having an alkoxyalkyl group may be selected from the compounds represented by the following formula (I), formula (II) and formula (III).

通式(I)、通式(II)及通式(III)中,R1為氫或任意的氫可經氟取代的碳數1~5的烷基,R2~R10分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、直鏈或分支的碳數 1~20的烷基或碳數1~5的烷氧基,R2~R10的烷基中的任意的-CH2-可經-COO-、-OCO-、-CO-或-O-取代,另外任意的氫可經鹵素取代,其中,R2~R4的至少一個為碳數1~5的烷氧基,R5~R7的至少一個為碳數1~5的烷氧基,另外R8~R10的至少一個為碳數1~5的烷氧基。通式(I)中,n為1~5。 In the general formula (I), the general formula (II) and the general formula (III), R 1 is hydrogen or any hydrogen having 1 to 5 carbon atoms which may be substituted by fluorine, and R 2 to R 10 are each hydrogen, Halogen, -CN, -CF 3 , -OCF 3 , -OH, a linear or branched alkyl group having 1 to 20 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, in an alkyl group of R 2 to R 10 Any -CH 2 - may be substituted by -COO-, -OCO-, -CO- or -O-, and any hydrogen may be substituted by halogen, wherein at least one of R 2 to R 4 is a carbon number of 1 to 5 The alkoxy group, at least one of R 5 to R 7 is an alkoxy group having 1 to 5 carbon atoms, and at least one of R 8 to R 10 is an alkoxy group having 1 to 5 carbon atoms. In the formula (I), n is from 1 to 5.

就耐熱性、透明性的觀點而言,上述R1的烷基較佳為甲基。另外,就鹼顯影性及膜的耐熱性(玻璃轉移點)的觀點而言,上述R2~R4的直鏈或分支的碳數1~20的烷基較佳為碳數為1~10。 The alkyl group of the above R 1 is preferably a methyl group from the viewpoint of heat resistance and transparency. Further, from the viewpoint of alkali developability and heat resistance (glass transition point) of the film, the linear or branched alkyl group having 1 to 20 carbon atoms of R 2 to R 4 preferably has a carbon number of 1 to 10 .

另外,亦出於相同的理由,上述R5~R8的直鏈或分支的碳數1~20的烷基(任意的氫可經鹵素取代)較佳為碳數為1~10。 Further, for the same reason, the linear or branched alkyl group having 1 to 20 carbon atoms (arbitrarily hydrogen may be substituted by halogen) of R 5 to R 8 is preferably a carbon number of 1 to 10.

另外,出於水解性的理由,R2~R4中的至少一個烷氧基、R5~R7中的至少一個烷氧基、R8~R10中的至少一個烷氧基的碳數較佳為分別為1~5。 Further, for the reason of the hydrolysis property, at least one alkoxy group of R 2 to R 4 , at least one alkoxy group of R 5 to R 7 , and carbon number of at least one alkoxy group of R 8 to R 10 Preferably, they are 1 to 5, respectively.

作為具有烷氧基矽烷基的自由基聚合性單體,於聚合物100重量份中,上述通式(I)、通式(II)、通式(III)所表示的化合物(a1)於聚合物中的量較佳為5重量份~50重量份,若上述(a1)的量過多,則有相對介電常數上升的傾向,故於欲降低相對介電常數的用途中較佳為10重量份~40重量份。 The radically polymerizable monomer having an alkoxyalkylene group is polymerized in the above compound (I), the formula (II), and the compound (a1) represented by the formula (III) in 100 parts by weight of the polymer. The amount of the substance is preferably from 5 parts by weight to 50 parts by weight. If the amount of the above (a1) is too large, the relative dielectric constant tends to increase, so that it is preferably 10 parts for use in the application for lowering the relative dielectric constant. Parts ~ 40 parts by weight.

通式(I)、通式(II)及通式(III)所表示的化合物(a1)的具體例可列舉:3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧 基丙基三乙氧基矽烷、3-丙烯醯氧基丙基三乙氧基矽烷、對苯乙烯基三甲氧基矽烷、對苯乙烯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷等。若利用使用了該些自由基聚合性單體的共聚物,則具有高感度的正型(positive)特性,透明性高,且幾乎不存在由高溫下的燒製導致的透明性的劣化,另外顯影時對鹼性水溶液的溶解性高,即顯影性高,可容易地獲得圖案狀透明膜,且表現出耐溶劑性、高耐水性、耐酸性、耐鹼性、耐熱性,進而與底層的密接性變高。 Specific examples of the compound (a1) represented by the formula (I), the formula (II) and the formula (III) include 3-methylpropenyloxypropyltrimethoxydecane and 3-propenyloxyl Propyl trimethoxy decane, 3-methyl propylene oxime Propyl triethoxy decane, 3-propenyl methoxypropyl triethoxy decane, p-styryl trimethoxy decane, p-styryl triethoxy decane, vinyl trimethoxy decane, ethylene Triethoxy decane and the like. When a copolymer using these radically polymerizable monomers is used, it has a positive property of high sensitivity, high transparency, and almost no deterioration in transparency due to firing at a high temperature, and The solubility in the alkaline aqueous solution during development is high, that is, the developability is high, and the pattern-like transparent film can be easily obtained, and exhibits solvent resistance, high water resistance, acid resistance, alkali resistance, heat resistance, and further, with the underlayer. The adhesion is high.

另外,於本發明中,藉由使用具有烷氧基矽烷基的自由基聚合性單體(a1)作為聚合物(A)的單體,聚合物(A)中的烷氧基矽烷基因藉由曝光而產生的酸而被水解成矽烷醇(silanol),由此使聚合物(A)溶解於鹼性顯影液中。藉此,於使用本發明的正型感光性組成物的情形時,曝光後無需進行燒製(曝光後燒製),可直接進入顯影步驟。 Further, in the present invention, by using a radical polymerizable monomer (a1) having an alkoxyalkylalkyl group as a monomer of the polymer (A), the alkoxyalkyl group in the polymer (A) is used by The acid generated by the exposure is hydrolyzed to a silanol, whereby the polymer (A) is dissolved in an alkaline developing solution. Thereby, in the case of using the positive photosensitive composition of the present invention, it is not necessary to perform firing (exposure after exposure) after exposure, and it is possible to directly enter the developing step.

<1-1-2.自由基聚合性單體(a2)> <1-1-2. Radical Polymerizable Monomer (a2)>

本發明中可使用的具有酸性基的自由基聚合性單體(a2)可列舉:具有不飽和羧酸的自由基聚合性單體、具有不飽和羧酸酐的自由基聚合性單體、具有酚性OH的自由基聚合性單體、具有磷酸基的自由基聚合性單體及具有磺酸基的自由基聚合性單體。 The radically polymerizable monomer (a2) having an acidic group which can be used in the invention includes a radical polymerizable monomer having an unsaturated carboxylic acid, a radical polymerizable monomer having an unsaturated carboxylic anhydride, and a phenol. A radical polymerizable monomer having an OH group, a radical polymerizable monomer having a phosphoric acid group, and a radical polymerizable monomer having a sulfonic acid group.

具有不飽和羧酸的自由基聚合性單體的具體例可列舉丙烯酸、甲基丙烯酸,具有不飽和羧酸酐的自由基聚合性單體的具體例可列舉馬來酸酐。 Specific examples of the radically polymerizable monomer having an unsaturated carboxylic acid include acrylic acid and methacrylic acid, and specific examples of the radical polymerizable monomer having an unsaturated carboxylic acid anhydride include maleic anhydride.

上述具有酚性OH的自由基聚合性單體例如可列舉羥基苯乙烯或下述通式(IV)所表示的具有酚性OH的自由基聚合性單體。 The radically polymerizable monomer having a phenolic OH is, for example, a hydroxystyrene or a radically polymerizable monomer having a phenolic OH represented by the following formula (IV).

(式中,R11、R12及R13分別為氫或任意的氫可經氟取代的碳數1~3的烷基,R14、R15、R16、R17及R18分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、碳數1~5的烷基或碳數1~5的烷氧基,R14、R15、R16、R17及R18的烷基中的任意的-CH2-可經-COO-、-OCO-或-CO-取代,R14、R15、R16、R17及R18的烷基及烷氧基中的任意的氫可經鹵素取代,其中,R14~R18中至少一個為-OH。 (wherein R 11 , R 12 and R 13 are each hydrogen or an arbitrary alkyl group having 1 to 3 carbon atoms which may be substituted by fluorine, and R 14 , R 15 , R 16 , R 17 and R 18 are each hydrogen; , halogen, -CN, -CF 3 , -OCF 3 , -OH, an alkyl group having 1 to 5 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, R 14 , R 15 , R 16 , R 17 and R 18 Any of -CH 2 - in the alkyl group may be substituted by -COO-, -OCO- or -CO-, any of alkyl and alkoxy groups of R 14 , R 15 , R 16 , R 17 and R 18 The hydrogen may be substituted by a halogen, wherein at least one of R 14 to R 18 is -OH.

上述通式(IV)所表示的具有酚性OH的自由基聚合性單體的具體例可列舉4-羥基苯基乙烯基酮。 Specific examples of the radically polymerizable monomer having a phenolic OH represented by the above formula (IV) include 4-hydroxyphenyl vinyl ketone.

具有磷酸基的自由基聚合性單體例如可列舉:磷酸甲基丙烯酸酯、2-甲基丙烯醯氧基乙基酸式磷酸酯、磷酸2-(甲基丙烯醯氧基)乙酯。 Examples of the radical polymerizable monomer having a phosphoric acid group include phosphoric acid methacrylate, 2-methylpropenyloxyethyl acid phosphate, and 2-(methacryloxy)ethyl phosphate.

具有磺酸基的自由基聚合性單體例如可列舉:乙烯基磺酸、丙烯醯胺-第三丁基磺酸。 Examples of the radical polymerizable monomer having a sulfonic acid group include vinylsulfonic acid and acrylamide-t-butylsulfonic acid.

若利用使用上述自由基聚合性單體的共聚物,則就鹼 可溶性的觀點而言較佳。該些自由基聚合性單體可單獨使用,亦可混合使用多種。 If a copolymer using the above radical polymerizable monomer is used, the base is used. It is preferred from the viewpoint of solubility. These radical polymerizable monomers may be used singly or in combination of two or more.

上述具體例中,較佳為甲基丙烯酸、羥基苯乙烯或4-羥基苯基乙烯基酮。甲基丙烯酸及羥基苯乙烯容易獲取,4-羥基苯基乙烯基酮於透明性、耐熱性、組成物的保存穩定性的方面可獲得良好的特性。 In the above specific examples, methacrylic acid, hydroxystyrene or 4-hydroxyphenyl vinyl ketone is preferred. Methacrylic acid and hydroxystyrene are easily available, and 4-hydroxyphenyl vinyl ketone can obtain good characteristics in terms of transparency, heat resistance, and storage stability of the composition.

<1-1-3.自由基聚合性單體(a3)> <1-1-3. Radical polymerizable monomer (a3)>

本發明中可使用的其他自由基聚合性單體(a3)可使用:具有環氧基的自由基聚合性單體、具有二環戊基的自由基聚合性單體、具有N取代馬來醯亞胺的自由基聚合性單體、具有矽氧烷的自由基聚合性單體等。所使用的單體可為一種,亦可為多種。具有環氧基的自由基聚合性單體的具體例可列舉:丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、丙烯酸甲基縮水甘油酯、甲基丙烯酸甲基縮水甘油酯、α-乙基丙烯酸縮水甘油酯丙烯酸3,4-環氧基環己酯、α-乙基丙烯酸縮水甘油酯甲基丙烯酸3,4-環氧基環己酯等。若利用使用該些自由基聚合性單體的共聚物,則耐濺鍍性良好,另外耐化學品性變高。 Other radical polymerizable monomers (a3) which can be used in the present invention can be used: a radical polymerizable monomer having an epoxy group, a radical polymerizable monomer having a dicyclopentyl group, and an N-substituted male fluorene. A radically polymerizable monomer of an imine, a radically polymerizable monomer having a deuterium oxide, or the like. The monomers to be used may be one type or plural types. Specific examples of the radical polymerizable monomer having an epoxy group include glycidyl acrylate, glycidyl methacrylate, methyl glycidyl acrylate, methyl glycidyl methacrylate, and α-ethyl acrylate. Glycidyl acrylate 3,4-epoxycyclohexyl acrylate, α-ethyl methacrylate glycidyl methacrylate 3,4-epoxycyclohexyl ester, and the like. When a copolymer using these radically polymerizable monomers is used, the sputtering resistance is good and the chemical resistance is high.

另外,具有二環戊基的自由基聚合性單體、具有N取代馬來醯亞胺的自由基聚合性單體的具體例可列舉:丙烯酸二環戊酯或甲基丙烯酸二環戊酯、N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-丁基馬來醯亞胺、N-環己基馬來醯亞胺、N-苄基馬來醯亞胺、N-苯基馬來醯亞胺、N-(4-乙醯基苯基)馬來醯亞胺、N-(2,6-二乙基苯基)馬來醯亞胺、N-(4-二甲基胺基-3,5-二硝基苯基)馬來醯亞胺、N-(1-苯胺基萘 基-4)馬來醯亞胺、N-[4-(2-苯并噁唑基)苯基]馬來醯亞胺或N-(9-吖啶基)馬來醯亞胺等。 Further, specific examples of the radically polymerizable monomer having a dicyclopentyl group and a radically polymerizable monomer having an N-substituted maleimide include dicyclopentanyl acrylate or dicyclopentan methacrylate. N-methylmaleimide, N-ethylmaleimide, N-butylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-phenylmaleimide, N-(4-ethylmercaptophenyl)maleimide, N-(2,6-diethylphenyl)maleimide, N-(4 -dimethylamino-3,5-dinitrophenyl)maleimide, N-(1-anilinophthalene Base-4) Maleidimine, N-[4-(2-benzoxazolyl)phenyl]maleimide or N-(9-acridinyl)maleimide.

若使用該些自由基聚合性單體,則就耐熱性、低介電常數性的觀點而言較佳。 When these radically polymerizable monomers are used, it is preferable from the viewpoint of heat resistance and low dielectric constant.

本發明中所用的具有矽氧烷的自由基聚合性單體的具體例可列舉:丙烯醯氧基丙基-三-三甲基矽烷氧基矽烷、甲基丙烯醯氧基丙基-三-三甲基矽烷氧基矽烷等。 Specific examples of the radically polymerizable monomer having a decane used in the present invention include acryloxypropyl-tris-trimethyldecyloxydecane and methacryloxypropyl-tri- Trimethylnonyloxydecane, and the like.

進而,上述聚合物(A)亦可於不損及本發明的效果的範圍內使用上述以外的自由基聚合性單體。 Further, the polymer (A) may be a radical polymerizable monomer other than the above, insofar as the effects of the present invention are not impaired.

此種自由基聚合性單體例如可列舉甲基丙烯酸苄酯及甲基丙烯酸環己酯。 Examples of such a radical polymerizable monomer include benzyl methacrylate and cyclohexyl methacrylate.

上述聚合物(A)較佳為具有適當的鹼可溶性。於本發明中,所謂鹼可溶性,是指以下性質:藉由旋塗將進行自由基聚合而成的聚合物(A)的溶液塗佈於基板上,於100℃下加熱2分鐘,將所形成的厚度0.01 μm~100 μm的被膜於25℃的2.38重量%的氫氧化四甲基銨水溶液中浸漬5分鐘後,以純水沖洗,此時上述被膜以不殘留的程度而溶解於鹼中。 The above polymer (A) preferably has an appropriate alkali solubility. In the present invention, the term "base solubility" refers to a property in which a solution of a polymer (A) which is subjected to radical polymerization by spin coating is applied onto a substrate and heated at 100 ° C for 2 minutes to form a solution. The film having a thickness of 0.01 μm to 100 μm was immersed in a 2.38 wt% aqueous solution of tetramethylammonium hydroxide at 25 ° C for 5 minutes, and then rinsed with pure water. At this time, the film was dissolved in the alkali to the extent that it did not remain.

進行自由基聚合而成的聚合物(A)的鹼可溶性可藉由如下單體的量來調整:自由基聚合性單體(a2)中所用的具有酚性OH的自由基聚合性單體、或具有不飽和羧酸的自由基聚合性單體或具有不飽和羧酸酐的自由基聚合性單體。例如,進行自由基聚合而成的聚合物(A)的鹼可溶性可藉由增加如下單體的量而提高:具有酚性OH的自由基聚合性單體、或具有不飽和羧酸的自由基聚合性單體 或具有不飽和羧酸酐的自由基聚合性單體。 The alkali solubility of the polymer (A) which is subjected to radical polymerization can be adjusted by the amount of the monomer: a radically polymerizable monomer having a phenolic OH used in the radical polymerizable monomer (a2), Or a radically polymerizable monomer having an unsaturated carboxylic acid or a radically polymerizable monomer having an unsaturated carboxylic anhydride. For example, the alkali solubility of the polymer (A) which is subjected to radical polymerization can be increased by increasing the amount of a monomer having a phenolic OH or a radical having an unsaturated carboxylic acid. Polymeric monomer Or a radically polymerizable monomer having an unsaturated carboxylic anhydride.

聚合物(A)的合成方法並無特別限制,可使自由基聚合性單體進行自由基共聚合而製作。具體而言,可使自由基聚合性單體(a1)、自由基聚合性單體(a2)及自由基聚合性單體(a3)的混合物進行聚合而獲得,較佳為於使用溶劑的溶液中的自由基聚合。再者,於該自由基聚合時,亦可使用聚合起始劑。 The method for synthesizing the polymer (A) is not particularly limited, and a radically polymerizable monomer can be produced by radical copolymerization. Specifically, a mixture of the radical polymerizable monomer (a1), the radical polymerizable monomer (a2), and the radical polymerizable monomer (a3) can be obtained by polymerization, preferably a solution using a solvent. Free radical polymerization in. Further, a polymerization initiator may also be used in the radical polymerization.

於使用聚合起始劑的情形時,聚合溫度只要為由所使用的聚合起始劑充分產生自由基的溫度,則並無特別限定,通常為50℃~150℃的範圍。聚合時間亦無特別限定,通常為1小時~24小時的範圍。另外,該聚合亦可於加壓、減壓或大氣壓的任一壓力下進行。 In the case of using a polymerization initiator, the polymerization temperature is not particularly limited as long as it is a temperature at which radicals are sufficiently generated by the polymerization initiator to be used, and is usually in the range of 50 ° C to 150 ° C. The polymerization time is also not particularly limited, but is usually in the range of 1 hour to 24 hours. Further, the polymerization can also be carried out under any pressure of pressure, reduced pressure or atmospheric pressure.

上述聚合反應中使用的溶劑較佳為溶解所使用的自由基聚合性單體及所生成的聚合物(A)的溶劑。尤其就經聚合而成的聚合物的保存穩定性的方面而言,較佳為具有羥基的溶劑。其中,具有羥基的溶劑亦可於其他溶劑中的聚合後用作聚合物的稀釋溶劑。該溶劑的具體例可列舉:甲醇、乙醇、1-丙醇、2-丙醇、丙酮、2-丁酮、乙酸乙酯、乙酸丙酯、四氫呋喃、乙腈、二噁烷、甲苯、二甲苯、環己酮、乙二醇單乙醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、二乙二醇單乙醚、二乙二醇二甲醚、二乙二醇甲基乙醚、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、N,N-二甲基甲醯胺等。上述溶劑可為該等的一種,亦可為該等的兩種以上的混合物。 The solvent used in the above polymerization reaction is preferably a solvent which dissolves the radically polymerizable monomer to be used and the polymer (A) to be produced. In particular, in terms of storage stability of the polymer obtained by polymerization, a solvent having a hydroxyl group is preferred. Among them, a solvent having a hydroxyl group can also be used as a diluent solvent for the polymer after being polymerized in another solvent. Specific examples of the solvent include methanol, ethanol, 1-propanol, 2-propanol, acetone, 2-butanone, ethyl acetate, propyl acetate, tetrahydrofuran, acetonitrile, dioxane, toluene, xylene, and the like. Cyclohexanone, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ether, 3-methoxy Methyl propyl propionate, ethyl 3-ethoxypropionate, N,N-dimethylformamide, and the like. The solvent may be one of these or a mixture of two or more of these.

可於合成聚合物(A)時使用的聚合起始劑可使用: 藉由熱而產生自由基的化合物、偶氮雙異丁腈或2,2'-偶氮雙(2,4-二甲基戊腈)等偶氮系起始劑、或過氧化苯甲醯等過氧化物系起始劑。為了調節分子量,亦可適量添加硫代乙醇酸等鏈轉移劑。 A polymerization initiator which can be used in the synthesis of the polymer (A) can be used: a compound which generates a radical by heat, an azobisisobutyronitrile or an azo initiator such as 2,2'-azobis(2,4-dimethylvaleronitrile) or benzoyl peroxide A peroxide-based initiator. In order to adjust the molecular weight, a chain transfer agent such as thioglycolic acid may be added in an appropriate amount.

聚合物(A)若由以聚苯乙烯為標準的凝膠滲透層析法(Gel Permeation Chromatography,GPC)分析所求出的重量平均分子量為1,000~100,000的範圍,則直至以鹼性顯影液將曝光部分溶解為止的顯影時間適當,且顯影時膜的表面不易變粗糙,因而較佳。進而,若重量平均分子量為1,500~50,000的範圍,則直至以鹼性顯影液將未曝光部分溶解為止的顯影時間適當,且顯影時膜的表面不易變粗糙,顯影殘渣亦極少,故更佳。出於同樣的理由,若重量平均分子量為2,000~20,000的範圍,則特佳。 When the weight average molecular weight determined by gel permeation chromatography (GPC) analysis using a polystyrene standard is in the range of 1,000 to 100,000, the polymer (A) is used until an alkaline developer The development time until the exposed portion is dissolved is appropriate, and the surface of the film during development is less likely to be roughened, which is preferable. Further, when the weight average molecular weight is in the range of 1,500 to 50,000, the development time until the unexposed portion is dissolved in the alkaline developing solution is appropriate, and the surface of the film is hardly roughened during development, and the development residue is extremely small, which is more preferable. For the same reason, it is particularly preferable if the weight average molecular weight is in the range of 2,000 to 20,000.

可使用分子量為645~132,900的聚苯乙烯(例如瓦里安(VARIAN)公司製造的聚苯乙烯校準套組(calibration kit)PL2010-0102)作為標準的聚苯乙烯,使用PLgel MIXED-D(瓦里安(VARIAN)公司製造)作為管柱,並使用四氫呋喃(Tetrahydrofuran,THF)作為移動相進行測定。 Polystyrene having a molecular weight of 645 to 132,900 (for example, a polystyrene calibration kit PL2010-0102 manufactured by VARIAN) can be used as the standard polystyrene, using PLgel MIXED-D (Watt) VARIAN (manufactured by VARIAN) was used as a column and measured using Tetrahydrofuran (THF) as a mobile phase.

本發明的聚合物(A)可藉由聚合時的單體濃度、聚合起始劑的量、聚合溫度而調整為較佳的分子量。例如,就製造的容易性的觀點而言,聚合時的單體濃度(在上述聚合反應中所使用的溶劑中,溶解於溶劑中的單體總量的濃度)較佳為5重量%~60重量%,更佳為15重量%~50重量%。 The polymer (A) of the present invention can be adjusted to a preferred molecular weight by the monomer concentration at the time of polymerization, the amount of the polymerization initiator, and the polymerization temperature. For example, from the viewpoint of easiness of production, the monomer concentration at the time of polymerization (the concentration of the total amount of the monomers dissolved in the solvent in the solvent used in the polymerization reaction) is preferably 5% by weight to 60%. The weight% is more preferably 15% by weight to 50% by weight.

另外,於本發明的正型感光性組成物中,相對於該組成物總量,上述聚合物(A)的含量較佳為1重量%~60重量%,更佳為3重量%~40重量%,特佳為5重量%~35重量%。 Further, in the positive photosensitive composition of the present invention, the content of the polymer (A) is preferably from 1% by weight to 60% by weight, more preferably from 3% by weight to 40% by weight based on the total mass of the composition. %, particularly preferably from 5% by weight to 35% by weight.

另外,上述聚合物(A)的含量可根據本發明的正型感光性組成物的塗佈方法於上述範圍內適當調整。例如若為旋塗,則增加聚合物(A)的含量而提高組成物的黏度,另一方面,例如若為狹縫塗佈則減少聚合物(A)的含量而降低組成物的黏度。 Further, the content of the above polymer (A) can be appropriately adjusted within the above range according to the coating method of the positive photosensitive composition of the present invention. For example, in the case of spin coating, the content of the polymer (A) is increased to increase the viscosity of the composition. On the other hand, for example, if the slit is applied, the content of the polymer (A) is decreased to lower the viscosity of the composition.

<2.本發明的光酸產生劑(B)> <2. Photoacid generator (B) of the present invention>

本發明中使用的光酸產生劑可列舉:二苯基錪鹽、三苯基鋶鹽等鎓鹽系的光酸產生劑,磺醯亞胺化合物系的光酸產生劑等。 The photoacid generator used in the present invention may, for example, be a sulfonium salt-based photoacid generator such as a diphenylsulfonium salt or a triphenylsulfonium salt, or a sulfonimide compound-based photoacid generator.

二苯基錪鎓鹽的例子可列舉:二苯基錪鎓(iodonium)四氟硼酸鹽、二苯基錪鎓六氟磷酸鹽、二苯基錪鎓六氟砷酸鹽、二苯基錪鎓三氟甲磺酸鹽、二苯基錪鎓三氟乙酸酯、二苯基錪鎓-對甲苯磺酸鹽、二苯基錪鎓丁基三(2,6-二氟苯基)硼酸鹽、4-甲氧基苯基苯基錪鎓四氟硼酸鹽、雙(4-第三丁基苯基)錪鎓四氟硼酸鹽、雙(4-第三丁基苯基)錪鎓六氟砷酸鹽、雙(4-第三丁基苯基)錪鎓三氟甲磺酸鹽、雙(4-第三丁基苯基)錪鎓三氟乙酸鹽、雙(4-第三丁基苯基)錪鎓-對甲苯磺酸鹽、雙(4-第三丁基苯基)錪鎓樟腦磺酸等。 Examples of the diphenyl phosphonium salt include diiodonium tetrafluoroborate, diphenylphosphonium hexafluorophosphate, diphenylphosphonium hexafluoroarsenate, and diphenylphosphonium. Trifluoromethanesulfonate, diphenylsulfonium trifluoroacetate, diphenylphosphonium-p-toluenesulfonate, diphenylphosphonium butyl tris(2,6-difluorophenyl)borate , 4-methoxyphenylphenylphosphonium tetrafluoroborate, bis(4-t-butylphenyl)phosphonium tetrafluoroborate, bis(4-t-butylphenyl)phosphonium hexafluorophosphate Arsenate, bis(4-t-butylphenyl)phosphonium triflate, bis(4-t-butylphenyl)phosphonium trifluoroacetate, bis(4-tert-butyl Phenyl) fluorene-p-toluenesulfonate, bis(4-t-butylphenyl) camphorsulfonic acid, and the like.

三苯基鋶鹽(triphenyl sulfonium)的例子可列舉:三苯基鋶三氟甲磺酸鹽、三苯基鋶樟腦磺酸、三苯基鋶四氟硼酸鹽、三苯基鋶三氟乙酸鹽、三苯基鋶-對甲苯磺酸鹽、 三苯基鋶丁基三(2、6-二氟苯基)硼酸鹽等。 Examples of the triphenyl sulfonium include triphenylsulfonium trifluoromethanesulfonate, triphenyl camphorsulfonic acid, triphenylsulfonium tetrafluoroborate, and triphenylsulfonium trifluoroacetate. , triphenylsulfonium-p-toluenesulfonate, Triphenylphosphonium butyl tris(2,6-difluorophenyl)borate, and the like.

磺醯亞胺化合物的例子可列舉:N-(三氟甲基磺醯氧基)琥珀醯亞胺、N-(樟腦磺醯氧基)琥珀醯亞胺、N-(4-甲基苯基磺醯氧基)琥珀醯亞胺、N-(2-三氟甲基苯基磺醯氧基)琥珀醯亞胺、N-(4-氟苯基磺醯氧基)琥珀醯亞胺、N-(三氟甲基磺醯氧基)鄰苯二甲醯亞胺、N-(樟腦磺醯氧基)鄰苯二甲醯亞胺、N-(2-三氟甲基苯基磺醯氧基)鄰苯二甲醯亞胺、N-(2-氟苯基磺醯氧基)鄰苯二甲醯亞胺、N-(三氟甲基磺醯氧基)二苯基馬來醯亞胺、N-(樟腦磺醯氧基)二苯基馬來醯亞胺、4-甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(2-三氟甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(4-氟苯基磺醯氧基)二苯基馬來醯亞胺、N-(4-氟苯基磺醯氧基)二苯基馬來醯亞胺、N-(苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(九氟丁磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)雙環 [2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)萘基二羧基醯亞胺、N-(樟腦磺醯氧基)萘基二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)萘基二羧基醯亞胺、N-(苯基磺醯氧基)萘基二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)萘基二羧基醯亞胺、N-(4-氟苯基磺醯氧基)萘基二羧基醯亞胺、N-(五氟乙基磺醯氧基)萘基二羧基醯亞胺、N-(七氟丙基磺醯氧基)萘基二羧基醯亞胺、N-(九氟丁基磺醯氧基)萘基二羧基醯亞胺、N-(乙基磺醯氧基)萘基二羧基醯亞胺、N-(丙基磺醯氧基)萘基二羧基醯亞胺、N-(丁基磺醯氧基)萘基二羧基醯亞胺、N-(戊基磺醯氧基)萘基二羧基醯亞胺、N-(己基磺醯氧基)萘基二羧基醯亞胺、N-(庚基磺醯氧基)萘基二羧基醯亞胺、N-(辛基磺醯氧基)萘基二羧基醯亞胺、N-(壬基磺醯氧基)萘基二羧基醯亞胺等。 Examples of the sulfonimide compound include N-(trifluoromethylsulfonyloxy) succinimide, N-(camphorsulfonyloxy) succinimide, and N-(4-methylphenyl). Sulfomethoxy) succinimide, N-(2-trifluoromethylphenylsulfonyloxy) succinimide, N-(4-fluorophenylsulfonyloxy) succinimide, N -(trifluoromethylsulfonyloxy) phthalimide, N-(camphorsulfonyloxy) phthalimide, N-(2-trifluoromethylphenylsulfonate) Ethylene phthalimide, N-(2-fluorophenylsulfonyloxy) phthalimide, N-(trifluoromethylsulfonyloxy) diphenyl malayan Amine, N-(camphorsulfonyloxy)diphenylmaleimide, 4-methylphenylsulfonyloxy)diphenylmaleimide, N-(2-trifluoromethylbenzene Sulfosulfonyloxy)diphenylmaleimide, N-(4-fluorophenylsulfonyloxy)diphenylmaleimide, N-(4-fluorophenylsulfonyloxy) Diphenylmaleimide, N-(phenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindenine, N-(4-methylphenyl Sulfomethoxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindolimine, N-(trifluoromethanesulfonyloxy)bicyclo[2.2.1] -5-ene-2,3-dicarboxy quinone imine, N-(nonafluorobutsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N- (camphorsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarminemine, N-(camphorsulfonyloxy)-7-oxabicyclo[2.2.1]g -5-ene-2,3-dicarboxy quinone imine, N-(trifluoromethylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyl Yttrium, N-(4-methylphenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarmine, N-(4-methylphenylsulfonate醯oxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2.2 .1]hept-5-ene-2,3-dicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5- Alkene-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy) double ring [2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene -2,3-dicarboxy quinone imine, N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxy quinone imine, N -( camphorsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxy quinone imine, N-(4-methylphenylsulfonyloxy)bicyclo[ 2.2.1] heptane-5,6-oxy-2,3-dicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2.2.1]heptane-5 ,6-oxy-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-di Carboxylimine, N-(trifluoromethylsulfonyloxy)naphthyldicarboxy quinone imine, N-(camphorsulfonyloxy)naphthyldicarboxy quinone imine, N-(4-methylbenzene Alkyl sulfonyloxy)naphthyldicarboxy quinone imine, N-(phenylsulfonyloxy)naphthyldicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)naphthyl Dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)naphthyl dicarboxy quinone imine, N-(pentafluoroethylsulfonyloxy)naphthyl dicarboxy quinone imine, N-( Heptafluoropropyl sulfonyloxy)naphthyldicarboxy quinone imine, N-(nonafluorobutane Sulfomethoxy)naphthyldicarboxy quinone imine, N-(ethylsulfonyloxy)naphthyldicarboxy quinone imine, N-(propylsulfonyloxy)naphthyldicarboxy quinone imine, N -(butylsulfonyloxy)naphthyldicarboxy quinone imine, N-(pentylsulfonyloxy)naphthyldicarboxy quinone imine, N-(hexylsulfonyloxy)naphthyldicarboxy fluorene Amine, N-(heptylsulfonyloxy)naphthyldicarboxy quinone imine, N-(octylsulfonyloxy)naphthyldicarboxy quinone imine, N-(decylsulfonyloxy)naphthyl Dicarboxy quinone imine and the like.

於本發明中,尤其於為了製作透明膜而使用本發明的正型感光性組成物的情形時,若使用如上所述的光酸產生劑,則無需於顯影後經過用以使殘存的光酸產生劑全部進行光分解的後曝光步驟,故較佳。 In the present invention, particularly in the case of using the positive photosensitive composition of the present invention in order to produce a transparent film, if the photoacid generator as described above is used, it is not necessary to pass the photoacid remaining after development. It is preferred that the generating agent is subjected to a post-exposure step in which all of the light is decomposed.

於本發明的正型感光性組成物中,相對於聚合物(A),上述光酸產生劑(B)的含量較佳為0.1重量%~10重量%,更佳為0.3重量%~5重量%,特佳為0.5重量%~3重量%。 In the positive photosensitive composition of the present invention, the content of the photoacid generator (B) is preferably from 0.1% by weight to 10% by weight, more preferably from 0.3% by weight to 5% by weight based on the polymer (A). %, particularly preferably from 0.5% by weight to 3% by weight.

<3.本發明的有機溶劑(C)> <3. Organic solvent (C) of the present invention>

本發明的正型感光性組成物除了該組成物中所含的聚合物(A)及光酸產生劑(B)以外,進而包含有機溶劑(C)。本發明中所用的有機溶劑較佳為溶解聚合物(A)及光酸產生劑(B)的有機溶劑,另外,就作為組成物的保存穩定性、或於圖案狀透明膜的製造製程中因故障(trouble)等而於步驟間有停頓時間的情形的塗膜的經時穩定性的方面而言,有機溶劑更佳為具有羥基的有機溶劑。較佳為有機溶劑的沸點為100℃~300℃的化合物。關於沸點為100℃~300℃的上述有機溶劑的具體例,可列舉:乙酸丁酯、丙酸丁酯、乳酸乙酯、羥基乙酸甲酯、羥基乙酸乙酯、羥基乙酸丁酯、甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、3-羥基丙酸甲酯、3-羥基丙酸乙酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、2-羥基丙酸甲酯、2-羥基丙酸丙酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸 乙酯、二噁烷、乙二醇、二乙二醇、三乙二醇、丙二醇、二丙二醇、三丙二醇、1,4-丁二醇、乙二醇單異丙醚、乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、乙二醇單丁醚乙酸酯、環己酮、環戊酮、二乙二醇單甲醚、二乙二醇單甲醚乙酸酯、二乙二醇單乙醚、二乙二醇單乙醚乙酸酯、二乙二醇單丁醚、二乙二醇單丁醚乙酸酯、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇甲基乙醚、甲苯、二甲苯、γ-丁內酯或N,N-二甲基乙醯胺。該等可單獨使用,亦可組合使用兩種以上。 The positive photosensitive composition of the present invention further contains an organic solvent (C) in addition to the polymer (A) and the photoacid generator (B) contained in the composition. The organic solvent used in the present invention is preferably an organic solvent in which the polymer (A) and the photoacid generator (B) are dissolved, and is used as a storage stability of the composition or in a process for producing a patterned transparent film. In terms of the temporal stability of the coating film in the case where there is a pause between steps, the organic solvent is more preferably an organic solvent having a hydroxyl group. A compound having a boiling point of an organic solvent of from 100 ° C to 300 ° C is preferred. Specific examples of the above organic solvent having a boiling point of 100 ° C to 300 ° C include butyl acetate, butyl propionate, ethyl lactate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate, and methoxy group. Methyl acetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, 3- Methyl methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 2-hydroxypropionate, 2-hydroxypropane Acid propyl ester, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, 2-ethoxypropane Ethyl acetate, methyl 2-hydroxy-2-methylpropanoate, ethyl 2-hydroxy-2-methylpropanoate, methyl 2-methoxy-2-methylpropanoate, 2-ethoxyl Ethyl 2-methylpropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, 2-oxo Butyric acid Ethyl ester, dioxane, ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, 1,4-butanediol, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl Ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, cyclohexanone, cyclopentanone, diethyl Glycol monomethyl ether, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether Acid ester, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ether, toluene, xylene, γ-butyrolactone or N,N-dimethylacetamide. These may be used singly or in combination of two or more.

於本發明的正型感光性組成物中,相對於該組成物總量,上述有機溶劑(C)的含量較佳為40重量%~99重量%,更佳為50重量%~90重量%,特佳為60重量%~80重量%。 In the positive photosensitive composition of the present invention, the content of the organic solvent (C) is preferably from 40% by weight to 99% by weight, more preferably from 50% by weight to 90% by weight, based on the total amount of the composition. It is particularly preferably from 60% by weight to 80% by weight.

<4.其他成分> <4. Other ingredients>

本發明的感光性組成物中,為了提高解析度、塗佈均勻性、顯影性、接著性而可添加各種添加劑。添加劑中,主要可列舉:陰離子系、陽離子系、非離子系、氟系或矽酮系的勻化(leveling)劑/界面活性劑,矽烷偶合劑等密接性提昇劑,烷氧基二苯甲酮類等紫外線吸收劑,環氧化合物、三聚氰胺化合物或雙疊氮化合物等交聯劑,多元羧酸、酚化合物等鹼溶解性促進劑,受阻酚系、受阻胺系、磷系、硫系化合物等抗氧化劑。 In the photosensitive composition of the present invention, various additives may be added in order to improve resolution, coating uniformity, developability, and adhesion. Examples of the additives include anionic, cationic, nonionic, fluorine or ketone ketone leveling agents/surfactants, decane coupling agents and the like, and alkoxy benzophenones. A UV absorber such as a ketone, a crosslinking agent such as an epoxy compound, a melamine compound or a bisazide compound, an alkali solubility promoter such as a polyvalent carboxylic acid or a phenol compound, a hindered phenol system, a hindered amine system, a phosphorus system or a sulfur compound. Such as antioxidants.

<4-1.>勻化劑、界面活性劑 <4-1.> Leveling agent, surfactant

於本發明的感光性組成物中,可列舉:波利弗洛 (Polyflow)No.45、波利弗洛(Polyflow)KL-245、波利弗洛(Polyflow)No.75、波利弗洛(Polyflow)No.90、波利弗洛(Polyflow)No.95(以上均為商品名,共榮社化學工業股份有限公司),BYK300、BYK306、BYK310、BYK320、BYK330、BYK342、BYK346(以上均為商品名,日本畢克化學(BYK Chemie Japan)股份有限公司),KP-341、KP-358、KP-368、KF-96-50CS、KF-50-100CS(以上均為商品名,信越化學工業股份有限公司)、沙福隆(Surflon)SC-101、沙福隆(Surflon)KH-40(以上均為商品名,AGC清美化學(Seimi Chemical)股份有限公司),福吉特(Ftergent)222F、福吉特(Ftergent)251、FTX-218(以上均為商品名,尼奧斯(Neos)股份有限公司),艾福拓(EFTOP)EF-351、艾福拓(EFTOP)EF-352、艾福拓(EFTOP)EF-601、艾福拓(EFTOP)EF-801、艾福拓(EFTOP)EF-802(以上均為商品名,三菱材料股份有限公司),美佳法(Megaface)F-171、美佳法(Megaface)F-177、美佳法(Megaface)F-475、美佳法(Megaface)F-556、美佳法(Megaface)R-30(以上均為商品名,迪愛生(DIC)股份有限公司),氟烷基苯磺酸鹽、氟烷基羧酸鹽、氟烷基聚氧伸乙基醚、碘化氟烷基銨、氟烷基甜菜鹼、氟烷基磺酸鹽、二甘油四(氟烷基聚氧伸乙基醚)、氟烷基三甲基銨鹽、氟烷基胺基磺酸鹽、聚氧伸乙基壬基苯基醚、聚氧伸乙基辛基苯基醚、聚氧伸乙基烷基醚、聚氧伸乙基月桂醚、聚氧伸乙基油醚、聚氧伸乙基十三烷基醚、聚氧伸乙基鯨蠟醚、聚氧伸乙基硬脂醚、聚氧伸乙基月桂酸酯、 聚氧伸乙基油酸酯、聚氧伸乙基硬脂酸酯、聚氧伸乙基月桂基胺、山梨糖醇酐月桂酸酯、山梨糖醇酐棕櫚酸酯、山梨糖醇酐硬脂酸酯、山梨糖醇酐油酸酯、山梨糖醇酐脂肪酸酯、聚氧伸乙基山梨糖醇酐月桂酸酯、聚氧伸乙基山梨糖醇酐棕櫚酸酯、聚氧伸乙基山梨糖醇酐硬脂酸酯、聚氧伸乙基山梨糖醇酐油酸酯、聚氧伸乙基萘基醚、烷基苯磺酸鹽或烷基二苯基醚二磺酸鹽等。較佳為將選自該等中的至少一種用於上述添加劑。 In the photosensitive composition of the present invention, Polifloli can be cited. (Polyflow) No. 45, Polyflow KL-245, Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 (All of the above are trade names, Kyoeisha Chemical Industry Co., Ltd.), BYK300, BYK306, BYK310, BYK320, BYK330, BYK342, BYK346 (all of which are trade names, BYK Chemie Japan Co., Ltd.) , KP-341, KP-358, KP-368, KF-96-50CS, KF-50-100CS (all of the above are trade names, Shin-Etsu Chemical Co., Ltd.), Shaflon (Surflon) SC-101, sand Surflon KH-40 (all of which are trade names, AGC Seimi Chemical Co., Ltd.), Ftergent 222F, Ftergent 251, FTX-218 (all of which are trade names) , Neos Co., Ltd., EFTOP EF-351, EFTOP EF-352, EFTOP EF-601, EFTOP EF- 801, EFTOP EF-802 (all of which are trade names, Mitsubishi Materials Co., Ltd.), Megaface F-171, Megaface F-177, Megaface F- 475, Megaface F-556, Megaface R-30 (all of which are trade names, Di Ai Sheng (DIC) Co., Ltd.), fluoroalkyl benzene sulfonate, fluoroalkyl carboxylate, fluoroalkyl polyoxyethyl ether, Fluoroalkylammonium iodide, fluoroalkyl betaine, fluoroalkyl sulfonate, diglycerol tetra(fluoroalkyl polyoxyethyl ether), fluoroalkyl trimethyl ammonium salt, fluoroalkyl amine sulfonate Acid salt, polyoxyethylene ethyl phenyl ether, polyoxyethyl octyl phenyl ether, polyoxyethylene ethyl ether, polyoxyethylene ethyl laurate, polyoxyethylene ethyl ether Polyoxyethylene ethyltridecyl ether, polyoxyethylene ethyl cetyl ether, polyoxyethylene ethyl stearyl ether, polyoxyethylene ethyl laurate, Polyoxyethylene ethyl oleate, polyoxyethylene ethyl stearate, polyoxyethylene ethyl laurylamine, sorbitan laurate, sorbitan palmitate, sorbitan stearin Acid ester, sorbitan oleate, sorbitan fatty acid ester, polyoxyethylene ethyl sorbitan laurate, polyoxyethylene sorbitan palmitate, polyoxyethyl ether Sorbitol stearate, polyoxyethylene sorbitan oleate, polyoxyethylene ethyl naphthyl ether, alkyl benzene sulfonate or alkyl diphenyl ether disulfonate. It is preferred to use at least one selected from the above for the above additives.

該等添加劑中,若添加選自氟烷基苯磺酸鹽、氟烷基羧酸鹽、氟烷基聚氧伸乙基醚、碘化氟烷基銨、氟烷基甜菜鹼、氟烷基磺酸鹽、二甘油四(氟烷基聚氧伸乙基醚)、氟烷基三甲基銨鹽或氟烷基胺基磺酸鹽等氟系界面活性劑及BYK306、BYK346、KP-341、KP-358或KP-368等矽酮系界面活性劑中的至少一種,則感光性組成物的塗佈均勻性變高,故較佳。 Among these additives, if added, it is selected from a fluoroalkylbenzenesulfonate, a fluoroalkylcarboxylate, a fluoroalkyl polyoxyethyl ether, a fluoroalkylammonium iodide, a fluoroalkyl betaine, a fluoroalkyl group. Fluorinated surfactants such as sulfonate, diglycerol tetrakis(fluoroalkyl polyoxyethyl ether), fluoroalkyltrimethylammonium salt or fluoroalkylamine sulfonate, and BYK306, BYK346, KP-341 At least one of an anthrone-based surfactant such as KP-358 or KP-368 is preferred because the coating uniformity of the photosensitive composition is high.

相對於組成物的總體量,本發明的感光性組成物中的上述勻化劑、界面活性劑的含量較佳為分別為0.001重量%~0.1重量%。 The content of the above-mentioned leveling agent and surfactant in the photosensitive composition of the present invention is preferably from 0.001% by weight to 0.1% by weight, based on the total amount of the composition.

<4-2.有機羧酸> <4-2. Organic carboxylic acid>

上述鹼溶解性促進劑中,可使用有機羧酸。有機羧酸可為一種亦可為兩種以上。有機羧酸較佳為多元羧酸,此種多元羧酸例如可列舉:偏苯三甲酸酐、鄰苯二甲酸酐及4-甲基環己烷-1,2-二羧酸酐。該些多元羧酸中,亦較佳為偏苯三甲酸酐。 Among the above alkali solubility promoters, organic carboxylic acids can be used. The organic carboxylic acid may be one type or two or more types. The organic carboxylic acid is preferably a polyvalent carboxylic acid, and examples of such a polyvalent carboxylic acid include trimellitic anhydride, phthalic anhydride, and 4-methylcyclohexane-1,2-dicarboxylic anhydride. Among these polycarboxylic acids, trimellitic anhydride is also preferred.

若於本發明的感光性組成物中添加多元羧酸,則可提 高感光性組成物的鹼可溶性。另外,於感光性組成物中含有環氧基的情形時,多元羧酸的羧基可與該等反應,進一步提高耐熱性、耐化學品性。 If a polyvalent carboxylic acid is added to the photosensitive composition of the present invention, it can be mentioned The alkali solubility of the highly photosensitive composition. Further, when the photosensitive composition contains an epoxy group, the carboxyl group of the polyvalent carboxylic acid can react with the above to further improve heat resistance and chemical resistance.

相對於聚合物(A)100重量份,本發明的感光性組成物中的上述有機羧酸的含量較佳為1重量份~30重量份,更佳為2重量份~20重量份。 The content of the above organic carboxylic acid in the photosensitive composition of the present invention is preferably from 1 part by weight to 30 parts by weight, more preferably from 2 parts by weight to 20 parts by weight, per 100 parts by weight of the polymer (A).

<4-3.酚化合物> <4-3. Phenol compound>

上述鹼溶解性促進劑中,可使用酚化合物。酚化合物可為一種亦可為兩種以上。酚化合物例如可列舉:2,3,4-三羥基二苯甲酮、2,4,6-三羥基二苯甲酮、2,2',4,4'-四羥基二苯甲酮、2,3,3',4-四羥基二苯甲酮、2,3,4,4'-四羥基二苯甲酮、雙(2,4-二羥基苯基)甲烷、雙(對羥基苯基)甲烷、三(對羥基苯基)甲烷、1,1,1-三(對羥基苯基)乙烷、雙(2,3,4-三羥基苯基)甲烷、2,2-雙(2,3,4-三羥基苯基)丙烷、1,1,3-三(2,5-二甲基-4-羥基苯基)-3-苯基丙烷、4,4'-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]亞乙基]雙酚、雙(2,5-二甲基-4-羥基苯基)-2-羥基苯基甲烷、3,3,3',3'-四甲基-1,1'-螺雙茚(spirobindene)-5,6,7,5',6',7'-己醇及2,2,4-三甲基-7,2',4'-三羥基黃烷(trihydroxy flavan)。該等酚化合物中,較佳為4,4'-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]亞乙基]雙酚。 A phenol compound can be used for the said alkali solubility promoter. The phenol compound may be one type or two or more types. Examples of the phenol compound include 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, and 2 ,3,3',4-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, bis(2,4-dihydroxyphenyl)methane, bis(p-hydroxyphenyl) Methane, tris(p-hydroxyphenyl)methane, 1,1,1-tris(p-hydroxyphenyl)ethane, bis(2,3,4-trihydroxyphenyl)methane, 2,2-dual (2) , 3,4-trihydroxyphenyl)propane, 1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane, 4,4'-[1-[ 4-[1-[4-Hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol, bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyl Phenylmethane, 3,3,3',3'-tetramethyl-1,1'-spirobindene-5,6,7,5',6',7'-hexanol and 2, 2,4-Trimethyl-7,2',4'-trihydroxy flavan. Among these phenol compounds, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol is preferred.

若於本發明的感光性組成物中添加酚化合物,則可提高感光性組成物的鹼可溶性。另外,於感光性組成物中含有環氧基的情形時,酚化合物的苯酚可與該等反應而進一步提高耐熱性、耐化學品性。 When a phenol compound is added to the photosensitive composition of the present invention, the alkali solubility of the photosensitive composition can be improved. Further, when the photosensitive composition contains an epoxy group, the phenol of the phenol compound can react with these to further improve heat resistance and chemical resistance.

相對於聚合物(A)100重量份,本發明的正型感光性組成物中的酚化合物的含量較佳為1重量份~50重量份,更佳為5重量份~20重量份。 The content of the phenol compound in the positive photosensitive composition of the present invention is preferably from 1 part by weight to 50 parts by weight, more preferably from 5 parts by weight to 20 parts by weight, per 100 parts by weight of the polymer (A).

<4-4.抗氧化劑> <4-4. Antioxidant>

上述抗氧化劑中,可較佳地使用受阻酚系、受阻胺系、磷系及硫系化合物的抗氧化劑。抗氧化劑可為一種亦可為兩種以上。就耐候性的觀點而言,抗氧化劑較佳為受阻酚系化合物的抗氧化劑。此種抗氧化劑例如可列舉:易璐諾斯(Irganox)1010、易璐諾斯(Irganox)FF、易璐諾斯(Irganox)1035、易璐諾斯(Irganox)1035FF、易璐諾斯(Irganox)1076、易璐諾斯(Irganox)1076FD、易璐諾斯(Irganox)1076DWJ、易璐諾斯(Irganox)1098、易璐諾斯(Irganox)1135、易璐諾斯(Irganox)1330、易璐諾斯(Irganox)1726、易璐諾斯(Irganox)1425 WL、易璐諾斯(Irganox)1520L、易璐諾斯(Irganox)245、易璐諾斯(Irganox)245FF、易璐諾斯(Irganox)245DWJ、易璐諾斯(Irganox)259、易璐諾斯(Irganox)3114、易璐諾斯(Irganox)565、易璐諾斯(Irganox)565DD、易璐諾斯(Irganox)295(商品名;日本BASF(股)),艾迪科斯塔波(ADK STAB)AO-20、艾迪科斯塔波(ADK STAB)AO-30、艾迪科斯塔波(ADK STAB)AO-50、艾迪科斯塔波(ADK STAB)AO-60、艾迪科斯塔波(ADK STAB)AO-70及艾迪科斯塔波(ADK STAB)AO-80(商品名;艾迪科(ADEKA)(股))。其中,更佳為易璐諾斯(Irganox)1010。 Among the above antioxidants, an antioxidant of a hindered phenol type, a hindered amine type, a phosphorus type, and a sulfur type compound can be preferably used. The antioxidant may be one type or two or more types. From the viewpoint of weather resistance, the antioxidant is preferably an antioxidant of a hindered phenol compound. Such antioxidants include, for example, Irganox 1010, Irganox FF, Irganox 1035, Irganox 1035FF, Irganox ) 1076, Irganox 1076FD, Irganox 1076DWJ, Irganox 1098, Irganox 1135, Irganox 1330, Easy Irganox 1726, Irganox 1425 WL, Irganox 1520L, Irganox 245, Irganox 245FF, Irganox ) 245DWJ, Irganox 259, Irganox 3114, Irganox 565, Irganox 565DD, Irganox 295 (trade name) ; Japan BASF (shares)), ADIK STAB AO-20, ADK STAB AO-30, ADX STAB AO-50, Addicus ADB STAB AO-60, ADK STAB AO-70 and ADK STAB AO-80 (trade name; ADEKA). Among them, it is better to be Irganox 1010.

相對於聚合物(A)100重量份,本發明的感光性組成物中的抗氧化劑的含量較佳為0.1重量份~15重量份,更佳為1重量份~10重量份。 The content of the antioxidant in the photosensitive composition of the present invention is preferably from 0.1 part by weight to 15 parts by weight, more preferably from 1 part by weight to 10 parts by weight, per 100 parts by weight of the polymer (A).

<4-5.密接性提昇劑> <4-5. Adhesion enhancer>

上述密接性提昇劑是為了提高感光性組成物與基板的密接性而使用。密接性提昇劑中,可較佳地使用偶合劑。密接性提昇劑可為一種,亦可為兩種以上。上述偶合劑中,可使用矽烷系、鋁系或鈦酸酯系的化合物。此種偶合劑例如可列舉:3-縮水甘油氧基丙基二甲基乙氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、乙醯基烷氧基二異丙醇鋁及四異丙基雙(二辛基亞磷醯氧基)鈦酸酯。該等中,3-縮水甘油氧基丙基三甲氧基矽烷由於提高密接性的效果大,故較佳。 The adhesion improving agent is used to improve the adhesion between the photosensitive composition and the substrate. Among the adhesion promoters, a coupling agent can be preferably used. The adhesion improving agent may be one type or two or more types. Among the above coupling agents, a decane-based, aluminum-based or titanate-based compound can be used. Examples of such a coupling agent include 3-glycidoxypropyldimethylethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltrimethoxy. Base decane, acetonitrile alkoxy aluminum diisopropoxide and tetraisopropyl bis(dioctylphosphonium oxy) titanate. Among these, 3-glycidoxypropyltrimethoxydecane is preferred because it has a large effect of improving adhesion.

相對於聚合物(A)100重量份,本發明的感光性組成物中的密接性提昇劑的含量較佳為10重量份以下。 The content of the adhesion improving agent in the photosensitive composition of the present invention is preferably 10 parts by weight or less based on 100 parts by weight of the polymer (A).

<4-6.紫外線吸收劑> <4-6. UV absorber>

上述紫外線吸收劑中,可使用烷氧基二苯甲酮類等在感光性組成物中被用作紫外線吸收劑的成分。紫外線吸收劑可為一種亦可為兩種以上。此種紫外線吸收劑例如可列舉:帝奴彬(Tinuvin)P、帝奴彬(Tinuvin)120、帝奴彬(Tinuvin)144、帝奴彬(Tinuvin)213、帝奴彬(Tinuvin)234、帝奴彬(Tinuvin)326、帝奴彬(Tinuvin)571、帝奴彬(Tinuvin)765(以上均為商品名,日本BASF(股))。 Among the above ultraviolet absorbers, a component such as an alkoxybenzophenone used as a UV absorber in a photosensitive composition can be used. The ultraviolet absorber may be one type or two or more types. Such ultraviolet absorbers include, for example, Tinuvin P, Tinuvin 120, Tinuvin 144, Tinuvin 213, Tinuvin 234, Emperor Tinuvin 326, Tinuvin 571, Tinuvin 765 (all of which are trade names, Japan BASF).

相對於聚合物(A)100重量份,本發明的感光性組成物中的紫外線吸收劑的含量較佳為0.01重量份~10重量 份,更佳為0.1重量份~5重量份。 The content of the ultraviolet absorber in the photosensitive composition of the present invention is preferably from 0.01 part by weight to 10% by weight based on 100 parts by weight of the polymer (A). More preferably, it is 0.1 part by weight - 5 parts by weight.

<4-7.交聯劑> <4-7. Crosslinking agent>

熱交聯劑中,可使用在以感光性組成物作為材料的成膜的加熱條件下引起交聯反應的成分。熱交聯劑可使用一種亦可使用兩種以上。熱交聯劑中可使用環氧化合物等熱交聯劑,此種熱交聯劑例如可列舉:jER807、jER815、jER825、jER827、jER828、jER190P及jER191P(商品名;油化殼牌環氧(股)),jER1004、jER1256、YX8000(商品名;三菱化學(股)),阿拉達(Araldite)CY177、阿拉達(Araldite)CY184(商品名;日本亨斯邁(Huntsman Japan)(股)),賽羅西德(Celloxide)2021P、EHPE-3150(商品名;大賽璐(Daicel)化學工業(股)),泰克莫(Techmore)VG3101L(商品名;普林特克(Printec)(股))。 In the thermal crosslinking agent, a component which causes a crosslinking reaction under heating conditions of film formation using a photosensitive composition as a material can be used. The thermal crosslinking agent may be used alone or in combination of two or more. A thermal crosslinking agent such as an epoxy compound may be used in the thermal crosslinking agent, and examples of such a thermal crosslinking agent include: jER807, jER815, jER825, jER827, jER828, jER190P, and jER191P (trade name; oiled shell epoxy) )), jER1004, jER1256, YX8000 (trade name; Mitsubishi Chemical (share)), Araldite CY177, Araldite CY184 (trade name; Japan Huntsman Japan (share)), match Celloxide 2021P, EHPE-3150 (trade name; Daicel Chemical Industry), Techmore VG3101L (trade name; Printec).

相對於聚合物(A)100重量份,本發明的正型感光性組成物中的熱交聯劑的含量較佳為1重量份~50重量份,更佳為5重量份~30重量份。 The content of the thermal crosslinking agent in the positive photosensitive composition of the present invention is preferably from 1 part by weight to 50 parts by weight, more preferably from 5 parts by weight to 30 parts by weight, per 100 parts by weight of the polymer (A).

就正型感光性組成物的經時穩定性的觀點而言,本發明的正型感光性組成物較佳為於溫度-30℃~25℃的範圍內避光保存。若保存溫度為-20℃~10℃,則就防止產生自正型感光性組成物的析出物的觀點而言更佳。 The positive photosensitive composition of the present invention is preferably stored in the dark at a temperature of from -30 ° C to 25 ° C from the viewpoint of stability over time of the positive photosensitive composition. When the storage temperature is -20 ° C to 10 ° C, it is more preferable from the viewpoint of preventing the occurrence of precipitates from the positive photosensitive composition.

本發明的正型感光性組成物適於形成透明的膜,且由於圖案化時的解析度相對較高,故最適於形成開有10 μm以下的小孔的絕緣膜。此處,所謂絕緣膜,例如是指為了使以層狀配置的配線間絕緣而設置的膜(層間絕緣膜)等。 The positive photosensitive composition of the present invention is suitable for forming a transparent film, and since it has a relatively high resolution at the time of patterning, it is most suitable for forming an insulating film having a small hole of 10 μm or less. Here, the insulating film is, for example, a film (interlayer insulating film) or the like provided to insulate between wirings arranged in a layer.

本發明的圖案狀透明膜是藉由上述本發明的感光性組 成物的塗膜的曝光、顯影及燒製而形成。例如,上述透明膜及絕緣膜等本發明的圖案狀透明膜可利用抗蝕劑領域中形成膜的通常方法來形成,例如是以如下方式形成。 The patterned transparent film of the present invention is the photosensitive group of the present invention The coating film of the object is formed by exposure, development, and firing. For example, the pattern-like transparent film of the present invention such as the above-mentioned transparent film and insulating film can be formed by a usual method of forming a film in the field of a resist, and is formed, for example, as follows.

首先,藉由旋塗、輥塗、狹縫塗佈等公知的方法,將本發明的正型感光性組成物塗佈於玻璃等基板上。基板例如可列舉:白板玻璃、藍板玻璃、二氧化矽塗佈藍板玻璃等透明玻璃基板,聚碳酸酯、聚醚碸、聚酯、壓克力(Acryl)、氯乙烯、芳香族聚醯胺、聚醯胺醯亞胺、聚醯亞胺等合成樹脂製片、膜或基板,鋁板、銅板、鎳板、不鏽鋼板等金屬基板,以及陶瓷板,及具有光電轉換元件的半導體基板。對於該些基板,視需要可進行矽烷偶合劑等的化學品處理、電漿處理、離子電鍍、濺鍍、氣相反應法、真空蒸鍍等前處理。 First, the positive photosensitive composition of the present invention is applied onto a substrate such as glass by a known method such as spin coating, roll coating or slit coating. Examples of the substrate include a transparent glass substrate such as white plate glass, blue plate glass, and ceria coated blue plate glass, polycarbonate, polyether oxime, polyester, Acryl, vinyl chloride, and aromatic polyfluorene. A synthetic resin sheet such as an amine, a polyamidimide or a polyimide, a film or a substrate, a metal substrate such as an aluminum plate, a copper plate, a nickel plate or a stainless steel plate, a ceramic plate, and a semiconductor substrate having a photoelectric conversion element. For these substrates, a chemical treatment such as a decane coupling agent, a plasma treatment, an ion plating, a sputtering, a gas phase reaction method, or a vacuum vapor deposition may be performed as needed.

繼而,利用熱板或烘箱將基板上的正型感光性組成物的塗膜乾燥。通常於60℃~120℃下乾燥1分鐘~5分鐘。對於經乾燥的基板上的上述膜,隔著具有所需圖案形狀的開口部的遮罩照射紫外線等放射線。照射條件較佳為i線且5 mJ/cm2~50 mJ/cm2Then, the coating film of the positive photosensitive composition on the substrate is dried by a hot plate or an oven. It is usually dried at 60 ° C ~ 120 ° C for 1 minute ~ 5 minutes. The film on the dried substrate is irradiated with radiation such as ultraviolet rays through a mask having an opening having a desired pattern shape. The irradiation conditions are preferably i-line and 5 mJ/cm 2 to 50 mJ/cm 2 .

放射線照射後的膜無需曝光後燒製(PEB:曝光後,為了去除存在於聚合物中的保護基而於進行顯影之前進行燒製),使用鹼性溶液等顯影液進行顯影。藉由顯影,上述膜中的經放射線照射的部分迅速溶解於顯影液中。顯影方法並無特別限定,可使用浸漬顯影、浸置顯影、噴淋顯影的任一種。 The film after the radiation irradiation is not fired after exposure (PEB: after exposure, in order to remove the protective group present in the polymer and is fired before development), development is carried out using a developing solution such as an alkaline solution. By the development, the portion irradiated with radiation in the above film is rapidly dissolved in the developer. The development method is not particularly limited, and any of immersion development, immersion development, and shower development can be used.

上述顯影液較佳為鹼性溶液。鹼性溶液中所含的鹼例 如可列舉:氫氧化四甲基銨、氫氧化四乙基銨、氫氧化-2-羥基乙基三甲基銨、碳酸鈉、碳酸氫鈉、碳酸鉀、碳酸氫鉀、氫氧化鈉及氫氧化鉀。另外,顯影液可較佳地使用該些鹼的水溶液。即,顯影液例如可列舉:氫氧化四甲基銨、氫氧化四乙基銨或氫氧化-2-羥基乙基三甲基銨等有機鹼類或碳酸鈉、氫氧化鈉或氫氧化鉀等無機鹼類的水溶液。 The above developing solution is preferably an alkaline solution. Alkali case contained in alkaline solution Examples thereof include tetramethylammonium hydroxide, tetraethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, sodium carbonate, sodium hydrogencarbonate, potassium carbonate, potassium hydrogencarbonate, sodium hydroxide, and hydrogen. Potassium oxide. Further, as the developer, an aqueous solution of the base can be preferably used. That is, examples of the developer include organic bases such as tetramethylammonium hydroxide, tetraethylammonium hydroxide or 2-hydroxyethyltrimethylammonium hydroxide, or sodium carbonate, sodium hydroxide or potassium hydroxide. An aqueous solution of an inorganic base.

顯影液中,亦可出於顯影殘渣的減少或圖案形狀的最佳化之目的而添加甲醇、乙醇或界面活性劑。界面活性劑中,例如可使用選自陰離子系、陽離子系及非離子系中的界面活性劑。該等中,尤其若添加非離子系的聚氧伸乙基烷基醚,則就提高解析度的觀點而言較佳。 In the developer, methanol, ethanol or a surfactant may be added for the purpose of reducing the development residue or optimizing the shape of the pattern. Among the surfactants, for example, a surfactant selected from the group consisting of an anionic system, a cationic system, and a nonionic system can be used. Among these, in particular, when a nonionic polyoxyethylidene ether is added, it is preferable from the viewpoint of improving the resolution.

以純水將經上述顯影的上述膜充分清洗。其後,於150℃~250℃下燒製10分鐘~120分鐘。如此可獲得所需的經圖案化的透明膜。 The above-mentioned film developed as described above was sufficiently washed with pure water. Thereafter, it is fired at 150 ° C to 250 ° C for 10 minutes to 120 minutes. The desired patterned transparent film is thus obtained.

如此而獲得的圖案狀透明膜亦可用作圖案狀絕緣膜。形成於絕緣膜中的孔的形狀於自正上方觀察時,較佳為正方形、長方形、圓形或橢圓形。進而亦可形成以下的膜:於該絕緣膜上形成透明電極,藉由蝕刻而進行圖案化後,進行配向處理。該絕緣膜由於耐濺鍍性高,故即便形成透明電極,絕緣膜中亦不產生皺褶,可確保高透明性。 The pattern-like transparent film thus obtained can also be used as a pattern-like insulating film. The shape of the hole formed in the insulating film is preferably square, rectangular, circular or elliptical when viewed from directly above. Further, a film may be formed by forming a transparent electrode on the insulating film, patterning by etching, and performing an alignment treatment. Since the insulating film has high sputtering resistance, even if a transparent electrode is formed, wrinkles are not formed in the insulating film, and high transparency can be ensured.

本發明的圖案狀透明膜能以與液晶顯示元件等顯示元件中的所需用途對應的通常厚度而形成。本發明的圖案狀透明膜的膜厚較佳為1 μm~10 μm,圖案狀透明膜的膜厚可藉由本發明的正型感光性組成物的黏度或本發明的正型感光性組成物中的固體成分的濃度來調整。 The pattern-like transparent film of the present invention can be formed in a usual thickness corresponding to a desired use in a display element such as a liquid crystal display element. The film thickness of the pattern-like transparent film of the present invention is preferably from 1 μm to 10 μm, and the film thickness of the pattern-like transparent film can be obtained by the viscosity of the positive-type photosensitive composition of the present invention or the positive-type photosensitive composition of the present invention. The concentration of the solid component is adjusted.

本發明的圖案狀透明膜可用於使用液晶等的顯示元件中。例如上述顯示元件是藉由以下方式製作:將如上述般設有本發明的圖案狀透明膜的元件基板與作為對向基板的彩色濾光片基板對位並壓接,其後進行熱處理而組合,於對向的基板之間注入液晶,將注入口密封。 The pattern-like transparent film of the present invention can be used in a display element using a liquid crystal or the like. For example, the display element is produced by arranging and crimping an element substrate provided with the pattern-like transparent film of the present invention as described above, and a color filter substrate as a counter substrate, followed by heat treatment. Liquid crystal is injected between the opposing substrates to seal the injection port.

或者亦可藉由以下方式製作:於上述元件基板上散布液晶,將元件基板重合,以液晶不露出的方式密封,上述顯示元件亦可為如此而製作的顯示元件。 Alternatively, it may be produced by dispersing liquid crystal on the element substrate, superimposing the element substrate, and sealing the liquid crystal so as not to be exposed, and the display element may be a display element produced in this manner.

如此,可將利用本發明的正型感光性組成物形成的具有優異的耐熱性及透明性的絕緣膜用於液晶顯示元件中。再者,本發明的顯示元件中所用的液晶、即液晶化合物及液晶組成物並無特別限定,可使用任意的液晶化合物及液晶組成物。 In this way, an insulating film having excellent heat resistance and transparency formed by the positive photosensitive composition of the present invention can be used for a liquid crystal display device. In addition, the liquid crystal used in the display element of the present invention, that is, the liquid crystal compound and the liquid crystal composition are not particularly limited, and any liquid crystal compound and liquid crystal composition can be used.

本發明的較佳態樣的正型感光性組成物例如更具有對圖案化透明膜及絕緣膜通常所要求的高耐溶劑性、高耐水性、高耐酸性、高耐鹼性、高耐熱性、高透明性、與底層的密接性等各種特性。 The positive photosensitive composition of the preferred embodiment of the present invention has, for example, high solvent resistance, high water resistance, high acid resistance, high alkali resistance, and high heat resistance which are generally required for the patterned transparent film and the insulating film. Various characteristics such as high transparency and adhesion to the underlying layer.

另外,本發明的較佳態樣的正型感光性組成物的耐溶劑性、耐酸性、耐鹼性、耐熱性、透明性優異,故使用該感光性組成物的透明膜、絕緣膜及顯示元件等即便於其絕緣膜形成後的後步驟中暴露於150℃~250℃的高溫下,或即便於溶劑、酸、鹼性溶液等中浸漬、接觸、熱處理等,膜亦不易產生表面粗糙。結果,使用本發明的較佳態樣的感光性組成物的透明膜等的光的透射率提高,可提高使用其的顯示元件等產品的顯示品質。 Further, since the positive photosensitive composition of the preferred embodiment of the present invention is excellent in solvent resistance, acid resistance, alkali resistance, heat resistance, and transparency, a transparent film, an insulating film, and a display using the photosensitive composition are used. The element or the like is exposed to a high temperature of 150 ° C to 250 ° C in the subsequent step after the formation of the insulating film, or the film is less likely to cause surface roughness even if it is immersed, contacted, heat-treated or the like in a solvent, an acid, an alkaline solution or the like. As a result, the transmittance of light such as a transparent film using the photosensitive composition of the preferred embodiment of the present invention is improved, and the display quality of a product such as a display element using the same can be improved.

[實例] [Example]

以下,藉由實例對本發明加以進一步說明,但本發明不限定於該些實例。 Hereinafter, the present invention will be further illustrated by way of examples, but the invention is not limited to the examples.

[合成例1]聚合物(A1)的合成 [Synthesis Example 1] Synthesis of Polymer (A1)

於帶有攪拌器的四口燒瓶中,一面進行氮氣發泡,一面以下述重量添加作為聚合溶劑的二乙二醇乙基甲醚以及作為單體的甲基丙烯酸縮水甘油酯、3-甲基丙烯醯氧基丙基三甲氧基矽烷、甲基丙烯醯氧基丙基-三-三甲基矽烷氧基矽烷、甲基丙烯酸二環戊酯、4-乙烯基酮苯酚,以下述重量添加作為聚合起始劑的2,2'-偶氮雙(2,4-二甲基戊腈),於90℃的聚合溫度下加熱2小時進行聚合。 In a four-necked flask equipped with a stirrer, nitrogen gas foaming was carried out while adding diethylene glycol ethyl methyl ether as a polymerization solvent and glycidyl methacrylate as a monomer, 3-methyl group. Propylene methoxypropyltrimethoxydecane, methacryloxypropyl-tris-trimethyldecaneoxydecane, dicyclopentanyl methacrylate, 4-vinylketophenol, added as weight below The polymerization initiator 2,2'-azobis(2,4-dimethylvaleronitrile) was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

將溶液冷卻至室溫為止,獲得聚合物(A1)溶液。對溶液的一部分進行取樣,藉由GPC分析(聚苯乙烯標準)來測定重量平均分子量。聚合物(A1)的重量平均分子量是將分子量為645~132,900的聚苯乙烯(瓦里安(VARIAN)公司製造的聚苯乙烯校準套組(calibration kit)PL2010-0102)用作標準聚苯乙烯,且管柱使用PLgel MIXED-D(VARIAN公司製造),使用THF作為移動相,將管柱溫度設定為35℃,使用示差折射率檢測器進行測定。結果,聚合物(A1)的重量平均分子量為7,100。 The solution was cooled to room temperature to obtain a polymer (A1) solution. A portion of the solution was sampled and the weight average molecular weight was determined by GPC analysis (polystyrene standard). The weight average molecular weight of the polymer (A1) is a polystyrene having a molecular weight of 645 to 132,900 (a calibration kit PL2010-0102 manufactured by VARIAN Co., Ltd.) is used as a standard polystyrene. And the column uses PLgel MIXED-D (manufactured by VARIAN Co., Ltd.), using THF as a mobile phase, the column temperature was set to 35 ° C, and measurement was performed using a differential refractive index detector. As a result, the weight average molecular weight of the polymer (A1) was 7,100.

[合成例2]聚合物(A2)的合成 [Synthesis Example 2] Synthesis of Polymer (A2)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A2)的藉由GPC分析(聚苯乙烯標準)所求出的重量平均分子量為4,200。 The weight average molecular weight of the obtained polymer (A2) determined by GPC analysis (polystyrene standard) was 4,200.

[合成例3]聚合物(A3)的合成 [Synthesis Example 3] Synthesis of Polymer (A3)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A3)的藉由GPC分析(聚苯乙烯標準)所求出的重量平均分子量為7,500。 The weight average molecular weight of the obtained polymer (A3) determined by GPC analysis (polystyrene standard) was 7,500.

[合成例4]聚合物(A4)的合成 [Synthesis Example 4] Synthesis of Polymer (A4)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A4)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為7,500。 The weight average molecular weight of the obtained polymer (A4) determined by GPC analysis (polystyrene standard) was 7,500.

[合成例5]聚合物(A5)的合成 [Synthesis Example 5] Synthesis of Polymer (A5)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A5)的藉由GPC分析(聚苯乙烯標 準)求出的重量平均分子量為4,100。 GPC analysis of the obtained polymer (A5) (polystyrene standard The weight average molecular weight determined was 4,100.

[合成例6]聚合物(A6)的合成 [Synthesis Example 6] Synthesis of Polymer (A6)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A6)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為3,900。 The weight average molecular weight of the obtained polymer (A6) determined by GPC analysis (polystyrene standard) was 3,900.

[合成例7]聚合物(A7)的合成 [Synthesis Example 7] Synthesis of Polymer (A7)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(A7)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為6,900。 The weight average molecular weight of the obtained polymer (A7) determined by GPC analysis (polystyrene standard) was 6,900.

[比較合成例1]聚合物(B1)的合成 [Comparative Synthesis Example 1] Synthesis of Polymer (B1)

以下述重量添加將合成例1的具有酸性基的自由基聚合性單體(4-羥基乙烯基酮)換成作為非酸性成分的甲基丙烯酸甲酯的下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 The following components obtained by replacing the radically polymerizable monomer (4-hydroxyvinylketone) having an acidic group of Synthesis Example 1 with methyl methacrylate as a non-acidic component were added at a polymerization temperature of 90 ° C under the following weight: The polymerization was carried out by heating for 2 hours.

所得的聚合物(B1)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為6,800。 The weight average molecular weight of the obtained polymer (B1) determined by GPC analysis (polystyrene standard) was 6,800.

[比較合成例2]聚合物(B2)的合成 [Comparative Synthesis Example 2] Synthesis of Polymer (B2)

與合成例1同樣地以下述重量添加下述成分,於90℃的聚合溫度下加熱2小時而進行聚合。 In the same manner as in Synthesis Example 1, the following components were added under the following weight, and the mixture was heated at a polymerization temperature of 90 ° C for 2 hours to carry out polymerization.

所得的聚合物(B2)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為6,800。 The weight average molecular weight of the obtained polymer (B2) determined by GPC analysis (polystyrene standard) was 6,800.

[比較合成例3]聚合物(B3)的合成 [Comparative Synthesis Example 3] Synthesis of Polymer (B3)

與合成例1同樣地以下述重量添加下述成分,於90℃ 的聚合溫度下加熱2小時而進行聚合。 The following components were added in the same manner as in Synthesis Example 1 at the following weight, at 90 ° C The polymerization was carried out by heating at a polymerization temperature for 2 hours.

所得的聚合物(B3)的藉由GPC分析(聚苯乙烯標準)求出的重量平均分子量為7,800。 The weight average molecular weight of the obtained polymer (B3) determined by GPC analysis (polystyrene standard) was 7,800.

[實例1] [Example 1] [正型感光性組成物的製造] [Manufacture of positive photosensitive composition]

將合成例1中所得的聚合物(A1)、作為光酸產生劑的日本BASF股份有限公司製造的易璐佳(Irgacure)250(以下簡稱為「Irg250」)、作為增感劑的川崎化成工業股份有限公司製造的安薩卡(Anthracure)UVS-1331(以下簡稱為「UVS-1331」)以表1所示的重量份混合溶解,進而將二乙二醇乙基甲醚(東邦化學工業股份有限公司製造的海索(Hisolve)EDM,以下簡稱為「EDM」)作為稀釋溶劑,以組成物的固體成分濃度成為28重量%的方式稀釋。最後,添加相對於組成物重量而為500 ppm的作為添加劑的矽酮系界面活性劑即信越化學工業股份有限公司製造的KP-341,獲得正型感光性組成物。再者,計算出合成例1中所得的聚合物(A1)溶液的固體成分濃度為40重量%。另外,下述表1及表2中的聚合物的重量份表示作為固體成分的重量份。 The polymer (A1) obtained in Synthesis Example 1, the Irgacure 250 (hereinafter referred to as "Irg250") manufactured by Japan BASF Co., Ltd. as a photoacid generator, and the Kawasaki Chemical Industry as a sensitizer Anthracure UVS-1331 (hereinafter referred to as "UVS-1331") manufactured by Co., Ltd. is mixed and dissolved in the parts shown in Table 1, and then diethylene glycol ethyl methyl ether (Dongbang Chemical Industry Co., Ltd.) Hisolve EDM manufactured by the company, hereinafter referred to as "EDM", is diluted as a dilution solvent so that the solid content concentration of the composition is 28% by weight. Finally, KP-341 manufactured by Shin-Etsu Chemical Co., Ltd., which is an anthrone-based surfactant which is an additive of 500 ppm based on the weight of the composition, was added to obtain a positive-type photosensitive composition. Further, the solid content concentration of the polymer (A1) solution obtained in Synthesis Example 1 was calculated to be 40% by weight. In addition, the weight part of the polymer in Table 1 and Table 2 below shows the weight part as a solid component.

[正型感光性組成物的評價方法] [Evaluation method of positive photosensitive composition] 1)圖案狀透明膜的形成 1) Formation of patterned transparent film

於玻璃基板上旋塗實例1中合成的正型感光性組成物,於100℃的熱板上乾燥2分鐘而獲得膜厚3 μm的有機膜。對該基板於空氣中隔著孔圖案形成用的遮罩,使用拓普康(Topcon)股份有限公司製造的近接式曝光機TME-150PRC(光源為超高壓水銀燈),通過波長截止濾波器將350 nm以下的光截止而取出g線、h線、i線,於曝光間隙為100 μm的條件下進行曝光。曝光量是利用牛尾電機股份有限公司製造的累計光量計UIT-102、受光器UVD-365PD進行測定。將曝光後的玻璃基板於2.38重量%的氫氧化四甲基銨水溶液中浸漬顯影90秒鐘,將曝光部的組成物去除。以純水將顯影後的基板清洗60秒鐘後,利用鼓風機使基板乾燥。將該基板於烘箱中於230℃下後烘烤30分鐘,形成圖案狀透明膜。膜厚是利用日本科磊(KLA-Tencor Japan)股份有限公司製造的觸針式膜厚計α臺階儀(α step)P15進行測定,將3處的測定的平均值作為膜厚。 The positive photosensitive composition synthesized in Example 1 was spin-coated on a glass substrate, and dried on a hot plate at 100 ° C for 2 minutes to obtain an organic film having a film thickness of 3 μm. A mask for forming a substrate with a hole pattern in the air is used, and a proximity exposure machine TME-150PRC (light source is an ultrahigh pressure mercury lamp) manufactured by Topcon Co., Ltd. is used, and 350 is passed through a wavelength cut filter. The light below nm was cut off, and the g line, the h line, and the i line were taken out, and exposure was performed under the condition that the exposure gap was 100 μm. The exposure amount was measured using an integrated photometer UIT-102 manufactured by Oxtail Electric Co., Ltd. and a light receiver UVD-365PD. The exposed glass substrate was immersed and developed in a 2.38 wt% aqueous solution of tetramethylammonium hydroxide for 90 seconds to remove the composition of the exposed portion. The developed substrate was washed with pure water for 60 seconds, and then the substrate was dried by a blower. The substrate was post-baked in an oven at 230 ° C for 30 minutes to form a patterned transparent film. The film thickness was measured by a stylus type film thickness meter α step meter (α step) P15 manufactured by KLA-Tencor Japan Co., Ltd., and the average value of the three measurements was taken as the film thickness.

2)顯影前後的膜厚及顯影後的殘膜率 2) Film thickness before and after development and residual film rate after development

於顯影前後測定膜厚。顯影後的殘膜率是由下式來計算。 The film thickness was measured before and after development. The residual film ratio after development is calculated by the following formula.

(顯影後膜厚/顯影前膜厚)×100(%) (film thickness after development / film thickness before development) × 100 (%) 3)感度 3) Sensitivity

將解析與光罩的尺寸相同大小的孔狀圖案的最小曝光量作為感度。 The minimum exposure amount of the hole pattern having the same size as that of the reticle is analyzed as the sensitivity.

4)解析度 4) Resolution

利用光學顯微鏡以1,000倍觀察上述1)中所得的後烘烤後的圖案狀透明膜的基板,確認於孔圖案的底部露出玻璃的遮罩尺寸。 The substrate of the post-baking pattern-shaped transparent film obtained in the above 1) was observed by an optical microscope at 1,000 times, and it was confirmed that the mask size of the glass was exposed at the bottom of the hole pattern.

將不解析孔圖案的情況評價為不良(NG,No Good)。 The case where the hole pattern was not analyzed was evaluated as poor (NG, No Good).

5)透明性 5) Transparency

於玻璃基板上旋塗實例1中合成的正型感光性組成物,於100℃的熱板上乾燥2分鐘而獲得膜厚3 μm的有機膜。其後,於2.38重量%的氫氧化四甲基銨水溶液中浸漬顯影90秒鐘。以純水將顯影後的基板清洗60秒鐘後,利用鼓風機使基板乾燥。對該基板於空氣中使用拓普康(Topcon)股份有限公司製造的近接式曝光機TME-150PRC(光源為超高壓水銀燈),通過波長截止濾波器將350 nm以下的光截止而取出g線、h線、i線,對基板全面進行曝光。曝光量是利用牛尾電機股份有限公司製造的累計光量計UIT-102、受光器UVD-365PD進行測定,設定為20 mJ/cm2。將該基板於烘箱中於230℃下後烘烤30分鐘,形成圖案狀透明膜。使用日本分光股份有限公司製造的紫外可見近紅外分光光度計V-670,以未形成透明膜的玻璃基板為參照而測定波長400 nm下的光透射率。 The positive photosensitive composition synthesized in Example 1 was spin-coated on a glass substrate, and dried on a hot plate at 100 ° C for 2 minutes to obtain an organic film having a film thickness of 3 μm. Thereafter, it was immersed and developed in a 2.38 wt% aqueous solution of tetramethylammonium hydroxide for 90 seconds. The developed substrate was washed with pure water for 60 seconds, and then the substrate was dried by a blower. The substrate is used in the air using a proximity exposure machine TME-150PRC (the light source is an ultrahigh pressure mercury lamp) manufactured by Topcon Co., Ltd., and the light of 350 nm or less is cut off by a wavelength cut filter to take out the g line. The h line and the i line are used to fully expose the substrate. The exposure amount was measured using an integrated photometer UIT-102 manufactured by Oxtail Electric Co., Ltd. and a light receiver UVD-365PD, and was set to 20 mJ/cm 2 . The substrate was post-baked in an oven at 230 ° C for 30 minutes to form a patterned transparent film. The light transmittance at a wavelength of 400 nm was measured using a UV-visible near-infrared spectrophotometer V-670 manufactured by JASCO Corporation, based on a glass substrate on which a transparent film was not formed.

6)耐熱性 6) Heat resistance

於230℃的烘箱中將上述1)中所得的圖案狀透明膜的 基板追加烘烤60分鐘,於追加烘烤前後與上述4)同樣地測定光透射率,將後烘烤後(追加烘烤前)的光透射率設定為T1,追加烘烤後的光透射率設定T2。追加烘烤後的光透射率與後烘烤後相比較,降低越少,可判定為越良好。 另外,於追加烘烤前後測定膜厚,由下式來計算膜厚的變化率。 The pattern-like transparent film obtained in the above 1) was placed in an oven at 230 ° C The substrate was additionally baked for 60 minutes, and the light transmittance was measured in the same manner as in the above 4) before and after the additional baking, and the light transmittance after post-baking (before the additional baking) was set to T1, and the light transmittance after baking was added. Set T2. The light transmittance after the additional baking is lower than that after the post-baking, and the smaller the decrease, the better the determination. Further, the film thickness was measured before and after the additional baking, and the rate of change in film thickness was calculated from the following formula.

(追加烘烤後膜厚/後烘烤後膜厚)×100(%) (additional film thickness after baking / film thickness after post-baking) × 100 (%)

7)密接性 7) Adhesion

藉由網格剝離試驗(交叉切割試驗)對上述1)中所得的圖案狀透明膜的基板進行評價。評價中,表示1 mm見方的網格100個中的膠帶剝離後的殘存網格數。 The substrate of the patterned transparent film obtained in the above 1) was evaluated by a mesh peeling test (cross-cut test). In the evaluation, the number of remaining meshes after peeling off the tape in 100 meshes of 1 mm square was shown.

將對實例1中合成的正型感光性組成物藉由上述評價方法所得的結果示於表3中。 The results obtained by the above evaluation method for the positive photosensitive composition synthesized in Example 1 are shown in Table 3.

[實例2~實例7] [Example 2 to Example 7]

如表1所記載般將各成分混合,與實例1同樣地製備正型感光性組成物並進行評價。有機溶劑與界面活性劑的比率與實例1相同。將評價結果示於表3中。 Each component was mixed as described in Table 1, and a positive photosensitive composition was prepared and evaluated in the same manner as in Example 1. The ratio of the organic solvent to the surfactant was the same as in Example 1. The evaluation results are shown in Table 3.

[比較例1~比較例4] [Comparative Example 1 to Comparative Example 4]

如表1所記載般將各成分混合,與實例1同樣地製備正型感光性組成物並進行評價,但圖案完全未解析。將評價結果示於表4中。 Each component was mixed as described in Table 1, and a positive photosensitive composition was prepared and evaluated in the same manner as in Example 1, but the pattern was not analyzed at all. The evaluation results are shown in Table 4.

於比較例1、比較例2及比較例4中,於圖案狀透明膜的形成過程中,曝光部的正型感光性組成物未溶解於鹼性顯影液中,即無法圖案化,故雖然顯影後的殘膜率成為 高的值,但解析度為NG。 In Comparative Example 1, Comparative Example 2, and Comparative Example 4, during the formation of the pattern-like transparent film, the positive photosensitive composition of the exposed portion was not dissolved in the alkaline developing solution, that is, it could not be patterned, so development was performed. After the residual film rate becomes A high value, but the resolution is NG.

通常,存在感度高的正型感光性組成物的顯影後的殘膜率變低、反之感度低的正型感光性組成物的顯影後的殘膜率變高的傾向,由上述實例的結果得知,於使用本案發明的正型感光性組成物的情形時,可獲得高感度且顯影後的殘膜率高的膜。 In general, the positive photosensitive composition having a high sensitivity has a low residual film ratio after development, and the positive photosensitive composition having a low sensitivity has a high residual film ratio after development, and the result of the above example is obtained. It is known that when the positive photosensitive composition of the present invention is used, a film having high sensitivity and a high residual film ratio after development can be obtained.

[產業上之可利用性] [Industrial availability]

本發明的感光性組成物例如可用於液晶顯示元件中。 The photosensitive composition of the present invention can be used, for example, in a liquid crystal display element.

Claims (9)

一種正型感光性組成物,其含有:聚合物(A),其是將具有烷氧基矽烷基的自由基聚合性單體(a1)、具有酸性基的自由基聚合性單體(a2)及(a1)與(a2)以外的自由基聚合性單體(a3)進行自由基共聚合而成;光酸產生劑(B);以及有機溶劑(C)。 A positive photosensitive composition comprising: a polymer (A) which is a radical polymerizable monomer (a1) having an alkoxyalkyl group, and a radical polymerizable monomer having an acidic group (a2) And (a1) and the radically polymerizable monomer (a3) other than (a2) are subjected to radical copolymerization; a photoacid generator (B); and an organic solvent (C). 如申請專利範圍第1項所述之正型感光性組成物,其中上述具有烷氧基矽烷基的自由基聚合性單體(a1)為下述通式(I)、通式(II)及通式(III)所表示的化合物的一種以上, [化3] (式中,R1為氫或任意的氫可經氟取代的碳數1~5的烷基,R2~R10分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、直鏈或分支的碳數1~20的烷基或碳數1~5的烷氧基,R2~R10的烷基中的任意的-CH2-可經-COO-、-OCO-、-CO-或-O-取代,另外任意的氫可經鹵素取代,其中,R2~R4的至少一個為碳數1~5的烷氧基,R5~R7的至少一個為碳數1~5的烷氧基,R8~R10的至少一個為碳數1~5的烷氧基;式(I)中,n為1~5)。 The positive photosensitive composition according to claim 1, wherein the radically polymerizable monomer (a1) having an alkoxyalkyl group is represented by the following formula (I), formula (II) and One or more compounds represented by the formula (III), [Chemical 3] (wherein R 1 is hydrogen or any hydrogen having 1 to 5 carbon atoms which may be substituted by fluorine, and R 2 to R 10 are each independently hydrogen, halogen, -CN, -CF 3 , -OCF 3 , -OH a straight or branched carbon number of 1 to 20 or an alkoxy group having 1 to 5 carbon atoms, and any -CH 2 - of the alkyl group of R 2 to R 10 may be -COO-, -OCO- And -CO- or -O-substituted, and any hydrogen may be substituted by halogen, wherein at least one of R 2 to R 4 is an alkoxy group having 1 to 5 carbon atoms, and at least one of R 5 to R 7 is carbon The alkoxy group having 1 to 5 atoms, at least one of R 8 to R 10 is an alkoxy group having 1 to 5 carbon atoms; and in the formula (I), n is 1 to 5). 如申請專利範圍第1項或第2項所述之正型感光性組成物,其中上述具有酸性基的自由基聚合性單體(a2)為選自具有酚性OH的自由基聚合性單體、具有不飽和羧酸的自由基聚合性單體、具有不飽和羧酸酐的自由基聚合性單體中的自由基聚合性單體的一種以上。 The positive photosensitive composition according to the first or second aspect of the invention, wherein the radical polymerizable monomer (a2) having an acidic group is selected from a radically polymerizable monomer having a phenolic OH. One or more kinds of radical polymerizable monomers having a radically polymerizable monomer having an unsaturated carboxylic acid and a radical polymerizable monomer having an unsaturated carboxylic acid anhydride. 如申請專利範圍第1項至第3項中任一項所述之正型感光性組成物,其中上述具有酸性基的自由基聚合性單體(a2)包含下述通式(IV)所表示的具有酚性OH的自由基聚合性單體,[化4] (式中,R11、R12及R13分別為氫或任意的氫可經氟取代的碳數1~3的烷基,R14、R15、R16、R17及R18分別為氫、鹵素、-CN、-CF3、-OCF3、-OH、碳數1~5的烷基或碳數1~5的烷氧基,R14、R15、R16、R17及R18的烷基中的任意的-CH2-可經-COO-、-OCO-或-CO-取代,R14、R15、R16、R17及R18的烷基及烷氧基中的任意的氫可經鹵素取代,其中,R14~R18中至少一個為-OH)。 The positive photosensitive composition according to any one of claims 1 to 3, wherein the radically polymerizable monomer (a2) having an acidic group is represented by the following formula (IV) Radical polymerizable monomer having phenolic OH, [Chemical 4] (wherein R 11 , R 12 and R 13 are each hydrogen or an arbitrary alkyl group having 1 to 3 carbon atoms which may be substituted by fluorine, and R 14 , R 15 , R 16 , R 17 and R 18 are each hydrogen; , halogen, -CN, -CF 3 , -OCF 3 , -OH, an alkyl group having 1 to 5 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, R 14 , R 15 , R 16 , R 17 and R 18 Any of -CH 2 - in the alkyl group may be substituted by -COO-, -OCO- or -CO-, any of alkyl and alkoxy groups of R 14 , R 15 , R 16 , R 17 and R 18 The hydrogen may be substituted by a halogen, wherein at least one of R 14 to R 18 is -OH). 如申請專利範圍第1項至第4項中任一項所述之正型感光性組成物,其中上述自由基聚合性單體(a3)為具有環氧基的自由基聚合性單體。 The positive photosensitive composition according to any one of claims 1 to 4, wherein the radical polymerizable monomer (a3) is a radical polymerizable monomer having an epoxy group. 如申請專利範圍第1項至第5項中任一項所述之正型感光性組成物,其中上述有機溶劑(C)為具有羥基的溶劑。 The positive photosensitive composition according to any one of claims 1 to 5, wherein the organic solvent (C) is a solvent having a hydroxyl group. 一種圖案狀透明膜,其是藉由如申請專利範圍第1項至第6項中任一項所述之正型感光性組成物的塗膜的曝光、顯影及燒製而形成。 A pattern-like transparent film which is formed by exposure, development, and firing of a coating film of a positive photosensitive composition according to any one of claims 1 to 6. 一種絕緣膜,其使用如申請專利範圍第7項所述之圖案狀透明膜。 An insulating film using the patterned transparent film as described in claim 7 of the patent application. 一種顯示元件,其具有如申請專利範圍第7項或第8項所述之圖案狀透明膜。 A display element having a patterned transparent film as described in claim 7 or item 8.
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CN106796399B (en) * 2014-10-02 2021-01-22 艾曲迪微系统股份有限公司 Positive photosensitive resin composition, method for producing patterned cured film, cured product, interlayer insulating film, covercoat, surface protective film, and electronic component

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