TW201321492A - Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products - Google Patents

Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products Download PDF

Info

Publication number
TW201321492A
TW201321492A TW101132833A TW101132833A TW201321492A TW 201321492 A TW201321492 A TW 201321492A TW 101132833 A TW101132833 A TW 101132833A TW 101132833 A TW101132833 A TW 101132833A TW 201321492 A TW201321492 A TW 201321492A
Authority
TW
Taiwan
Prior art keywords
acid
cerium
aqueous solution
particles
coated
Prior art date
Application number
TW101132833A
Other languages
Chinese (zh)
Inventor
Tomohiro Sakai
Yuiko YOSHIDA
Hiroyuki Tomonaga
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201321492A publication Critical patent/TW201321492A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Surface Treatment Of Glass (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The purpose of the present invention is to provide abrasive grains and a polishing slurry, both of which make it possible to polish an object to be polished at a high polish rate even when the amount of cerium oxide used is reduced. The present invention pertains to abrasive grains obtained by coating base particles with cerium oxide.

Description

研磨粒及其製造方法、研磨漿料及玻璃製品之製造方法 Abrasive grain, manufacturing method thereof, polishing slurry and method for producing glass product

本發明係關於一種研磨粒及其製造方法、研磨漿料及玻璃製品之製造方法。 The present invention relates to an abrasive granule, a method for producing the same, a polishing slurry, and a method for producing a glass product.

於面向硬碟驅動器之磁碟、液晶用玻璃、半導體基板或光罩等玻璃製品之製造中的研磨步驟中,為了提高生產性,而研究利用各種方法提高研磨速度。 In the polishing step in the manufacture of glass products such as a magnetic disk drive for a hard disk drive, a glass for liquid crystal, a semiconductor substrate, or a photomask, in order to improve productivity, various methods have been used to increase the polishing rate.

例如,專利文獻1中指出,可藉由於包含氧化鈰結晶微粒子或氧化鈰-氧化鋯固溶體結晶微粒子之研磨漿料中添加添加劑而提高研磨速度,且獲得良好之玻璃基板表面性狀。 For example, Patent Document 1 indicates that the polishing rate can be increased by adding an additive to a polishing slurry containing cerium oxide crystal fine particles or cerium oxide-zirconia solid solution crystal fine particles, and a good glass substrate surface property can be obtained.

專利文獻2中指出,藉由使研磨劑中含有將一次粒徑3~60 μm之碳酸鈰用於原料而製造之氧化鈰粒子,而獲得無損傷地進行高速研磨之研磨材料。 Patent Document 2 teaches that an abrasive material which is produced by using a cerium oxide particle having a primary particle diameter of 3 to 60 μm as a raw material in the polishing material is obtained, thereby obtaining an abrasive material which is subjected to high-speed polishing without damage.

又,專利文獻3中指出,藉由將含有鈰及鋯之複合氧化物用於研磨液組合物而對研磨對象基板進行研磨,可抑制研磨對象基板中產生刮痕,且可實現高速研磨。 Further, in Patent Document 3, it is pointed out that by polishing a substrate to be polished by using a composite oxide containing cerium and zirconium in a polishing liquid composition, scratches can be suppressed in the substrate to be polished, and high-speed polishing can be realized.

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1:國際公開第2010/038617號 Patent Document 1: International Publication No. 2010/038617

專利文獻2:日本專利特開第2010-30041號公報 Patent Document 2: Japanese Patent Laid-Open No. 2010-30041

專利文獻3:日本專利特開第2010-16064號公報 Patent Document 3: Japanese Patent Laid-Open No. 2010-16064

如上所述,於面向硬碟驅動器之磁碟、液晶用玻璃、半導體基板或光罩等玻璃製品之製造中的研磨步驟中,就研磨速度較高而言主要使用氧化鈰。然而,鈰之可開採地域有限,故而穩定供給存在困難,近年來發生價格高漲。 As described above, in the polishing step in the manufacture of a glass material such as a magnetic disk drive for a hard disk drive, a glass for liquid crystal, a semiconductor substrate, or a photomask, yttrium oxide is mainly used in terms of a high polishing rate. However, there are limited areas for mining, so there is difficulty in stabilizing supply, and prices have risen in recent years.

因此,本發明之目的在於提供一種可以較少之氧化鈰之使用量而以較高之研磨速度研磨被研磨物的研磨粒及研磨漿料。 Accordingly, it is an object of the present invention to provide an abrasive grain and a polishing slurry which can grind an object to be polished at a high polishing rate with a small amount of cerium oxide used.

本發明者等人發現藉由將母相粒子上被覆有氧化鈰之研磨粒用於被研磨物之研磨,而可以較少之氧化鈰之使用量而以較高之研磨速度研磨被研磨物,從而完成本發明。 The present inventors have found that by using abrasive grains coated with cerium oxide on the mother phase particles for polishing the object to be polished, it is possible to polish the object to be polished at a higher polishing rate with less use of cerium oxide. Thus, the present invention has been completed.

即,本發明如下。 That is, the present invention is as follows.

1.一種研磨粒,其係於母相粒子上被覆有氧化鈰者。 An abrasive granule which is coated with cerium oxide on a mother phase particle.

2.如上述1之研磨粒,其中上述母相粒子於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之水溶液中為溶解性。 2. The abrasive granule according to above 1, wherein the parent phase particles are selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, Solubility is obtained in an aqueous solution of at least one of ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate.

3.如上述1或2之研磨粒,其中上述母相粒子包含選自由氧化錳及氧化鋅所組成之群中之至少1種氧化物。 3. The abrasive grain according to 1 or 2 above, wherein the mother phase particle comprises at least one oxide selected from the group consisting of manganese oxide and zinc oxide.

4.如上述1至3中任一項之研磨粒,其中被覆於上述母相粒子上之氧化鈰相對於母相粒子為0.1質量%~25質量%。 4. The abrasive particles according to any one of the above 1 to 3, wherein the cerium oxide coated on the mother phase particles is 0.1% by mass to 25% by mass based on the mother phase particles.

5.如上述1至4中任一項之研磨粒,其中被覆於上述母相粒子上之氧化鈰相對於母相粒子為0.1質量%~20質量%。 5. The abrasive particles according to any one of the above 1 to 4, wherein the cerium oxide coated on the mother phase particles is from 0.1% by mass to 20% by mass based on the mother particles.

6.如上述1至5中任一項之研磨粒,其比表面積為0.1~20 m2/g。 6. The abrasive granule according to any one of the above 1 to 5, which has a specific surface area of from 0.1 to 20 m 2 /g.

7.一種研磨漿料,其包含如上述1至6中任一項之研磨粒。 A polishing slurry comprising the abrasive particles according to any one of the above 1 to 6.

8.一種研磨粒之製造方法,其係母相粒子上被覆有氧化鈰之研磨粒之製造方法,且其依序包括以下(1)~(3)步驟: (1)使鈰化合物溶解於水中而獲得鈰源水溶液之步驟; (2)將步驟(1)中獲得之鈰源水溶液被覆於母相粒子上而獲得由鈰源水溶液被覆之母相粒子的步驟; (3)對步驟(2)中獲得之由鈰源水溶液被覆之母相粒子進行焙燒而獲得由氧化鈰被覆之母相粒子的步驟。 A method for producing abrasive grains, which is a method for producing abrasive particles coated with cerium oxide on a mother phase particle, and which comprises the following steps (1) to (3) in sequence: (1) a step of dissolving a hydrazine compound in water to obtain an aqueous solution of hydrazine; (2) a step of coating the aqueous solution of the ruthenium source obtained in the step (1) on the mother phase particles to obtain the mother phase particles coated with the aqueous solution of the ruthenium source; (3) A step of calcining the mother phase particles coated with the aqueous solution of the cerium source obtained in the step (2) to obtain mother particles coated with cerium oxide.

9.如上述8之研磨粒之製造方法,其中於上述步驟(2)中,將鈰源水溶液噴霧於母相粒子上而獲得由鈰源水溶液被覆之母相粒子。 9. The method for producing an abrasive according to the above 8, wherein in the step (2), the aqueous solution of the cerium source is sprayed onto the mother phase particles to obtain a mother phase particle coated with the aqueous solution of the cerium source.

10.如上述8或9之研磨粒之製造方法,其中上述鈰化合物為選自由乙酸鈰、硝酸鈰、氫氧化鈰、硫酸鈰所組成之群中之至少1種。 10. The method for producing the abrasive grains according to the above 8 or 9, wherein the cerium compound is at least one selected from the group consisting of cerium acetate, cerium nitrate, cerium hydroxide, and barium sulfate.

11.一種玻璃製品之製造方法,其包括使用如上述1至6中任一項之研磨粒或如上述7之研磨漿料研磨玻璃之步驟。 A method of producing a glass article, comprising the step of grinding the glass using the abrasive particles according to any one of the above 1 to 6 or the polishing slurry as described above.

根據本發明之研磨粒及研磨漿料,可不使用大量之氧化鈰而以較高之研磨速度研磨被研磨物。 According to the abrasive grains and the polishing slurry of the present invention, the object to be polished can be polished at a higher polishing rate without using a large amount of cerium oxide.

以下,關於本發明詳細地進行說明。 Hereinafter, the present invention will be described in detail.

[研磨粒] [abrasive grain]

本發明之研磨粒係於母相粒子上被覆有氧化鈰之研磨粒,包含母相粒子、及被覆該母相粒子之氧化鈰。 The abrasive grains of the present invention are abrasive grains coated with cerium oxide on the mother phase particles, and include mother phase particles and cerium oxide covering the mother phase particles.

作為母相粒子,例如可列舉:氧化錳(Mn3O4、Mn2O3、MnO2)、氧化鋅(ZnO)、氧化鐵(Fe3O4、Fe2O3)、氧化銅(Cu2O、CuO)、氧化鋁(Al2O3)、二氧化矽(SiO2)、氧化鉻(Cr2O3、CrO2)及氧化鋯(ZrO2)。該等母相粒子通常可使用市售者。 Examples of the mother phase particles include manganese oxide (Mn 3 O 4 , Mn 2 O 3 , MnO 2 ), zinc oxide (ZnO), iron oxide (Fe 3 O 4 , Fe 2 O 3 ), and copper oxide (Cu). 2 O, CuO), alumina (Al 2 O 3 ), cerium oxide (SiO 2 ), chromium oxide (Cr 2 O 3 , CrO 2 ), and zirconia (ZrO 2 ). These parent phase particles are usually commercially available.

被覆於母相粒子上之氧化鈰對被研磨物之附著性較高,亦無法容易地溶解,因此存在研磨後之洗淨性較差之缺點。因此,就提高研磨後之洗淨性之觀點而言,較佳為以該等中於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之水溶液中為溶解性者製造母相粒子。 The cerium oxide coated on the mother phase particles has high adhesion to the object to be polished, and cannot be easily dissolved. Therefore, there is a disadvantage that the rinsing property after polishing is inferior. Therefore, from the viewpoint of improving the detergency after polishing, it is preferably selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, The mother phase particles are produced by dissolving in an aqueous solution of at least one of acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate.

作為於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之水溶液中為溶解性之母相粒子,例如可列舉:氧化錳(Mn3O4、Mn2O3、MnO2)、氧化鋅(ZnO)、氧化鐵(Fe3O4、Fe2O3)及氧化銅(Cu2O、CuO)。 As selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate, and Among the aqueous solutions of at least one of potassium carbonate, solubility mother particles are exemplified by manganese oxide (Mn 3 O 4 , Mn 2 O 3 , MnO 2 ), zinc oxide (ZnO), and iron oxide (Fe 3 ). O 4 , Fe 2 O 3 ) and copper oxide (Cu 2 O, CuO).

更具體而言,氧化錳(Mn3O4、Mn2O3、MnO2)可藉由鹽酸、硫酸、硝酸、抗壞血酸、過氧化氫等而進行溶解。 More specifically, manganese oxide (Mn 3 O 4 , Mn 2 O 3 , MnO 2 ) can be dissolved by hydrochloric acid, sulfuric acid, nitric acid, ascorbic acid, hydrogen peroxide or the like.

氧化鋅(ZnO)可藉由鹽酸、硝酸、硫酸等而進行溶解。 Zinc oxide (ZnO) can be dissolved by hydrochloric acid, nitric acid, sulfuric acid or the like.

氧化鐵(Fe3O4、Fe2O3)可藉由鹽酸、硝酸、硫酸等而進行溶解。 Iron oxide (Fe 3 O 4 , Fe 2 O 3 ) can be dissolved by hydrochloric acid, nitric acid, sulfuric acid or the like.

氧化銅(Cu2O、CuO)可藉由鹽酸、硝酸、硫酸等而進行溶解。 Copper oxide (Cu 2 O, CuO) can be dissolved by hydrochloric acid, nitric acid, sulfuric acid or the like.

該等母相粒子可單獨使用1種,亦可組合2種以上使用。再者,該等中更佳為氧化錳或氧化鋅。氧化錳或氧化鋅相對於酸、鹼、氧化劑或還原劑有較高之溶解性,因此藉由將氧化錳或氧化鋅用於母相粒子,而可不對被研磨物產生影響而藉由含有酸、鹼、氧化劑或還原劑之洗淨液獲得較高之洗淨效果。 These parent phase particles may be used alone or in combination of two or more. Further, these are more preferably manganese oxide or zinc oxide. Manganese oxide or zinc oxide has high solubility with respect to an acid, a base, an oxidizing agent or a reducing agent. Therefore, by using manganese oxide or zinc oxide as a mother phase particle, it is possible to contain an acid without affecting the object to be polished. The cleaning solution of the alkali, oxidant or reducing agent obtains a higher cleaning effect.

此處,「有溶解性」係指:於室溫下歷時1小時使0.1~1質量%之母相粒子溶解於含有0.01~2莫耳%選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之1種的水溶液中時,溶出量為90質量%以上。關於母相粒子之溶解性,可於實施例中依據下述溶解試驗而進行試驗。 Here, "solubility" means that 0.1 to 1% by mass of the mother phase particles are dissolved in a mixture containing 0.01 to 2 mol% selected from sulfuric acid, hydrochloric acid, nitric acid, and aminosulfonic acid at room temperature for 1 hour. When an aqueous solution of phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate or potassium carbonate is used, the amount of dissolution is 90. More than % by mass. Regarding the solubility of the mother phase particles, the test can be carried out in accordance with the following dissolution test in the examples.

作為母相粒子,可使用於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、過氧化氫、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之水溶液中為溶解性者,於研磨後之洗淨步驟中,利用含有選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、過氧化氫、抗壞血酸、過氧化氫、氨、氫 氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種的洗淨液洗淨被研磨物,藉此可不對被研磨物產生影響而獲得較高之洗淨效果。 As the mother phase particles, it can be used for selecting from sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, hydrogen peroxide, ascorbic acid, hydrogen peroxide, ammonia, hydrogen. It is soluble in an aqueous solution of at least one of sodium oxide, potassium hydroxide, sodium carbonate and potassium carbonate, and is used in a washing step after polishing, and contains a selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, and phosphoric acid. , oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, hydrogen peroxide, ascorbic acid, hydrogen peroxide, ammonia, hydrogen The cleaning liquid is washed with at least one of sodium oxide, potassium hydroxide, sodium carbonate, and potassium carbonate, whereby a high cleaning effect can be obtained without affecting the object to be polished.

利用氧化鈰之母相粒子之被覆量以氧化鈰換算較佳為0.1~25質量%,更佳為0.1~20質量%,進而較佳為1~10質量%,尤佳為1~5質量%。若被覆量為0.1質量%以上,則可獲得研磨速度提高之效果,若為25質量%以下,則可降低鈰使用量,若為20質量%以下,則可進一步降低鈰使用量。 The coating amount of the mother particles of the cerium oxide is preferably 0.1 to 25% by mass, more preferably 0.1 to 20% by mass, still more preferably 1 to 10% by mass, even more preferably 1 to 5% by mass, in terms of cerium oxide. . When the coating amount is 0.1% by mass or more, the effect of improving the polishing rate can be obtained, and if it is 25% by mass or less, the amount of ruthenium used can be reduced, and if it is 20% by mass or less, the amount of ruthenium used can be further reduced.

由氧化鈰被覆母相粒子之研磨粒之比表面積較佳為0.1~20 m2/g,更佳為0.5~15 m2/g,進而較佳為1~10 m2/g。若研磨粒之比表面積為0.1 m2/g以上,則可抑制由粗大粒子引起之研磨損傷,若為20 m2/g以下,則可獲得充分之研磨速度。研磨粒之比表面積係於實施例中利用後述方法而進行測定。 The specific surface area of the abrasive grains coated with the mother particles of cerium oxide is preferably from 0.1 to 20 m 2 /g, more preferably from 0.5 to 15 m 2 /g, still more preferably from 1 to 10 m 2 /g. When the specific surface area of the abrasive grains is 0.1 m 2 /g or more, the polishing damage caused by the coarse particles can be suppressed, and if it is 20 m 2 /g or less, a sufficient polishing rate can be obtained. The specific surface area of the abrasive grains was measured in the examples by the method described later.

[研磨粒之製造方法] [Method of manufacturing abrasive grains]

本發明之研磨粒可藉由依序包括以下(1)~(3)步驟之製造方法而製造。 The abrasive grains of the present invention can be produced by a production method including the following steps (1) to (3) in sequence.

(1)使鈰化合物溶解於水中而獲得鈰源水溶液之步驟;(2)將步驟(1)中獲得之鈰源水溶液被覆於母相粒子上而獲得由鈰源水溶液被覆之母相粒子的步驟;(3)對步驟(2)中獲得之由鈰源水溶液被覆之母相粒子進行焙燒而獲得由氧化鈰被覆之母相粒子的步驟。 (1) a step of dissolving a ruthenium compound in water to obtain an aqueous solution of ruthenium source; (2) a step of coating an aqueous solution of ruthenium source obtained in the step (1) on the mother phase particles to obtain mother phase particles coated with an aqueous solution of ruthenium source (3) a step of calcining the mother phase particles coated with the aqueous solution of the cerium source obtained in the step (2) to obtain mother particles coated with cerium oxide.

以下,說明每個步驟。 Hereinafter, each step will be explained.

(1)使鈰化合物溶解於水中而獲得鈰源水溶液之步驟 (1) a step of obtaining a hydrazine aqueous solution by dissolving a hydrazine compound in water

作為鈰化合物,乙酸鈰、硝酸鈰、氫氧化鈰或硫酸鈰就獲取性及對水之溶解度方面而言較佳。該等鈰化合物可單獨使用1種,亦可組合2種以上使用。 As the cerium compound, cerium acetate, cerium nitrate, cerium hydroxide or cerium sulfate is preferred in terms of availability and solubility in water. These hydrazine compounds may be used alone or in combination of two or more.

關於鈰源水溶液中之鈰化合物之濃度,只要考慮欲被覆於母相粒子上之氧化鈰之量、及下述步驟(2)中被覆於母相粒子上之鈰源水溶液之量而適當調整即可。若將鈰源水溶液中之鈰化合物之濃度以成為鈰化合物之溶解度以下之方式進行設定,則於下述步驟(2)中可將鈰源水溶液均勻地被覆於母相粒子上,因此較佳。 The concentration of the ruthenium compound in the aqueous solution of ruthenium is appropriately adjusted by considering the amount of ruthenium oxide to be coated on the mother phase particles and the amount of the ruthenium source aqueous solution coated on the mother phase particles in the following step (2). can. When the concentration of the ruthenium compound in the aqueous solution of ruthenium is set to be equal to or lower than the solubility of the ruthenium compound, the aqueous solution of ruthenium source can be uniformly coated on the mother phase particles in the following step (2), which is preferable.

下述步驟(2)中,於藉由將鈰源水溶液噴霧於母相粒子上而將鈰源水溶液被覆於母相粒子上之情形時,鈰源水溶液中之鈰化合物之濃度較佳為設為5~60質量%,更佳為設為10~60質量%。 In the following step (2), when the aqueous solution of the cerium source is coated on the mother phase particles by spraying the aqueous solution of the cerium source onto the mother phase particles, the concentration of the cerium compound in the aqueous solution of the cerium source is preferably set to 5 to 60% by mass, more preferably 10 to 60% by mass.

步驟(2)中,於藉由將母相粒子浸漬於鈰源水溶液中而將鈰源水溶液被覆於母相粒子上之情形時,鈰源水溶液中之鈰化合物之濃度較佳為設為1~40質量%,更佳為設為1~20質量%。 In the step (2), when the aqueous solution of the cerium source is coated on the mother phase particles by immersing the mother phase particles in the aqueous solution of the cerium source, the concentration of the cerium compound in the aqueous solution of the cerium source is preferably set to 1~ 40% by mass, more preferably 1 to 20% by mass.

步驟(2)中,於藉由將鈰源水溶液塗佈於母相粒子而將鈰源水溶液被覆於母相粒子上之情形時,鈰源水溶液中之鈰化合物之濃度較佳為設為1~60質量%,更佳為設為1~40質量%。 In the step (2), when the aqueous solution of the cerium source is coated on the mother phase particles by applying the aqueous solution of the cerium source to the mother phase particles, the concentration of the cerium compound in the aqueous solution of the cerium source is preferably set to 1~ 60% by mass, more preferably 1 to 40% by mass.

(2)將步驟(1)中獲得之鈰源水溶液被覆於母相粒子上而獲得由鈰源水溶液被覆之母相粒子的步驟 (2) a step of obtaining the mother phase particles coated with the aqueous solution of the ruthenium source by coating the aqueous solution of the ruthenium source obtained in the step (1) on the mother phase particles

步驟(2)係藉由步驟(1)中獲得之鈰源水溶液被覆母相粒 子而以水為介質使鈰化合物析出至母相粒子之表面的步驟。 Step (2) is to coat the mother phase particles with the aqueous solution of the hydrazine source obtained in the step (1). The step of precipitating the cerium compound to the surface of the mother phase particles using water as a medium.

作為將鈰源水溶液被覆於母相粒子上之方法,例如可列舉噴霧、浸漬或塗佈。於該等中,噴霧不需要乾燥步驟,就工業上之觀點而言較佳。 As a method of coating the aqueous solution of the cerium source on the mother phase particles, for example, spraying, dipping or coating can be mentioned. In these, the spraying does not require a drying step, and is preferred from an industrial standpoint.

(2-1)噴霧 (2-1) Spray

於利用噴霧之情形時,例如藉由霧化器、噴霧機等將鈰源水溶液噴附於母相粒子上而將鈰源水溶液被覆於母相粒子上。此時,可藉由每次噴霧時攪拌母相粒子而使母相粒子由鈰源水溶液均勻地被覆。 In the case of using a spray, the aqueous solution of the cerium source is coated on the mother phase particles by, for example, spraying an aqueous solution of the cerium source onto the mother phase particles by means of an atomizer, a sprayer or the like. At this time, the mother phase particles can be uniformly coated with the aqueous solution of the cerium source by stirring the mother phase particles each time the spraying.

作為具體之方法,例如可列舉將母相粒子裝入塑膠袋再利用霧化器噴霧鈰源水溶液之方法。 As a specific method, for example, a method in which the mother phase particles are placed in a plastic bag and the atomizer is used to spray the aqueous solution of the helium source is exemplified.

又,例如,亦可藉由旋轉窯進行熱乾燥並且一面以旋轉機攪拌母相粒子一面噴霧鈰源水溶液,於工業上亦有利。 Further, for example, it is also industrially advantageous to carry out thermal drying by a rotary kiln and to spray the aqueous solution of the cerium source while stirring the mother phase particles by a rotary machine.

鈰源水溶液對母相粒子之噴霧量相對於母相粒子較佳為設為0.1~40質量%,更佳為設為5~30質量%,進而較佳為設為10~25質量%。 The amount of the mother phase particles sprayed on the mother phase particles is preferably from 0.1 to 40% by mass, more preferably from 5 to 30% by mass, even more preferably from 10 to 25% by mass.

若噴霧量為0.1質量%以上,則水溶液遍佈母相粒子整體而可實現均勻之被覆。若為40質量%以下,則不形成糊狀或液狀而可直接供至焙燒步驟,因此可省略乾燥步驟,較佳。 When the amount of the spray is 0.1% by mass or more, the aqueous solution spreads over the entire mother phase particles to achieve uniform coating. When it is 40% by mass or less, it can be directly supplied to the baking step without forming a paste or a liquid, and therefore the drying step can be omitted, which is preferable.

噴霧條件通常較佳為設為0~200℃。 The spray condition is usually preferably set to 0 to 200 °C.

(2-2)浸漬 (2-2) impregnation

於利用浸漬之情形時,將母相粒子浸漬於鈰源水溶液中 而將鈰源水溶液被覆於母相粒子上。浸漬於鈰源水溶液中之母相粒子之量相對於水溶液通常較佳為設為1~60質量%,更佳為設為10~50質量%。 In the case of using impregnation, the mother phase particles are immersed in an aqueous solution of lanthanum source. The aqueous solution of lanthanum is coated on the mother phase particles. The amount of the mother phase particles immersed in the aqueous solution of the cerium source is usually preferably from 1 to 60% by mass, more preferably from 10 to 50% by mass, based on the aqueous solution.

藉由將浸漬於鈰源水溶液中之母相粒子之量設為1質量%以上,可降低所蒸發之水之量,藉由設為60質量%以下,可均勻地被覆鈰化合物。 By setting the amount of the mother phase particles to be immersed in the aqueous solution of the cerium source to 1% by mass or more, the amount of water to be evaporated can be reduced, and the cerium compound can be uniformly coated by being 60% by mass or less.

浸漬條件通常較佳為於0~90℃下設為0.1~24小時。 The immersion conditions are usually preferably from 0.1 to 24 hours at 0 to 90 °C.

於利用浸漬而將鈰源水溶液被覆於母相粒子上後進行乾燥,藉此可使鈰化合物析出至母相粒子之表面。再者,乾燥條件通常較佳為於80~200℃下設為2~24小時。 The cerium source aqueous solution is coated on the mother phase particles by dipping, and then dried to precipitate the cerium compound to the surface of the mother phase particles. Further, the drying condition is usually preferably from 2 to 24 hours at 80 to 200 °C.

於藉由浸漬而進行被覆之情形時,使母相粒子浸漬於鈰源水溶液中並進行乾燥後之鈰化合物對母相粒子之被覆量相對於母相粒子較佳為設為1~50質量%,更佳為設為5~50質量%,進而較佳為設為5~30質量%。 In the case of coating by immersion, it is preferable that the amount of the cerium compound to be coated on the mother phase particles after the mother phase particles are immersed in the hydrazine aqueous solution and dried is preferably 1 to 50% by mass based on the mother phase particles. More preferably, it is set to 5 to 50% by mass, and further preferably set to 5 to 30% by mass.

若被覆量為1質量%以上,則鈰化合物遍佈母相粒子整體而可實現均勻之被覆。若為50質量%以下,則不會出現氧化鈰單獨地析出。 When the coating amount is 1% by mass or more, the ruthenium compound is spread over the entire mother phase particles to achieve uniform coating. When it is 50% by mass or less, cerium oxide does not precipitate separately.

(2-3)塗佈 (2-3) Coating

於利用塗佈之情形時,例如利用滾動造粒裝置等將鈰源水溶液塗佈於母相粒子上,而由鈰源水溶液被覆母相粒子。 In the case of coating, the aqueous solution of the cerium source is applied to the mother phase particles by, for example, a rolling granulation apparatus, and the mother phase particles are coated with the aqueous solution of the cerium source.

鈰源水溶液對母相粒子之塗佈量相對於母相粒子較佳為設為1~100質量%,更佳為設為5~80質量%,進而較佳為設為10~60質量%。 The coating amount of the aqueous solution of the cerium source to the mother phase particles is preferably from 1 to 100% by mass, more preferably from 5 to 80% by mass, even more preferably from 10 to 60% by mass, based on the mother phase particles.

若塗佈量為1質量%以上、100質量%以下,則水溶液遍佈 母相粒子整體而可實現均勻之被覆。 When the coating amount is 1% by mass or more and 100% by mass or less, the aqueous solution is spread over The mother phase particles as a whole can achieve a uniform coating.

塗佈條件通常較佳為設為0~90℃。 The coating conditions are usually preferably set to 0 to 90 °C.

(3)對步驟(2)中獲得之由鈰源水溶液被覆之母相粒子進行焙燒而獲得由氧化鈰被覆之母相粒子的步驟 (3) a step of calcining the mother phase particles coated with the aqueous solution of the ruthenium source obtained in the step (2) to obtain mother particles coated with ruthenium oxide

步驟(3)係藉由對步驟(2)中獲得之由鈰源水溶液被覆之母相粒子進行焙燒使鈰化合物氧化,而獲得由氧化鈰被覆之母相粒子的步驟。 The step (3) is a step of obtaining a mother phase particle coated with cerium oxide by baking the mother phase particles coated with the aqueous solution of the cerium source obtained in the step (2) to oxidize the cerium compound.

焙燒溫度較佳為300~1000℃,更佳為400~1000℃,進而較佳為400~800℃。藉由將焙燒溫度設為300℃以上,而可使鈰化合物分解而析出氧化鈰,藉由設為1000℃以下,而可抑制由晶粒成長導致產生粗大粒子而製作損傷較少之研磨粒。 The calcination temperature is preferably from 300 to 1,000 ° C, more preferably from 400 to 1000 ° C, and still more preferably from 400 to 800 ° C. By setting the calcination temperature to 300° C. or more, the cerium compound can be decomposed to precipitate cerium oxide, and by setting it to 1000° C. or less, it is possible to suppress generation of coarse particles due to grain growth and to produce abrasive grains having less damage.

焙燒環境係設為大氣下,就成本方面而言較佳。又,焙燒時間通常較佳為設為2~72小時。 The calcination environment is preferably in the atmosphere, and is preferable in terms of cost. Further, the baking time is usually preferably set to 2 to 72 hours.

亦可藉由將焙燒物分級而去除粗大粒子。作為分級之方法,例如可列舉篩子或分級機等公知之方法。 The coarse particles can also be removed by classifying the calcined product. As a method of classification, a well-known method, such as a sieve or a classifier, is mentioned, for example.

本發明中之研磨粒可藉由上述(1)~(3)步驟而進行製造,只要不對各步驟產生影響,則亦可進行其他步驟。作為其他步驟,例如可列舉上述之乾燥或分級步驟等。再者,本發明中之研磨粒亦可以不具有上述(1)~(3)步驟中之1步或2步以上之方法進行製造。 The abrasive grains in the present invention can be produced by the above steps (1) to (3), and other steps can be carried out as long as they do not affect each step. As the other steps, for example, the above-described drying or classification step and the like can be mentioned. Further, the abrasive grains in the present invention may be produced by a method which does not have one or two or more steps in the above steps (1) to (3).

(研磨漿料) (grinding slurry)

可使本發明之研磨粒分散於例如水等分散介質中而製造研磨漿料。研磨漿料中之研磨粒濃度較佳為0.1~40質量%, 更佳為1~30質量%,進而較佳為1~20質量%。若研磨粒濃度為0.1質量%以上,則可表現出充分之研磨速度,藉由為40質量%以下而可效率良好地進行研磨。 The abrasive slurry of the present invention can be dispersed in a dispersion medium such as water to produce a polishing slurry. The concentration of the abrasive grains in the polishing slurry is preferably from 0.1 to 40% by mass. More preferably, it is 1 to 30% by mass, and further preferably 1 to 20% by mass. When the concentration of the abrasive grains is 0.1% by mass or more, a sufficient polishing rate can be exhibited, and the polishing can be performed efficiently by 40% by mass or less.

作為分散介質,例如可列舉水及醇。作為醇,例如可列舉:甲醇、乙醇、2-丙醇及乙二醇等。 Examples of the dispersion medium include water and alcohol. Examples of the alcohol include methanol, ethanol, 2-propanol, and ethylene glycol.

亦可於漿料中添加分散劑。作為分散劑,可使用公知者,例如可較佳地列舉:檸檬酸鈉、聚丙烯酸鈉、聚丙烯酸銨、聚丙烯酸-順丁烯二酸共聚物、吡啶羧酸及羧甲基纖維素等。 A dispersing agent may also be added to the slurry. As the dispersing agent, those known may be used, and examples thereof include sodium citrate, sodium polyacrylate, ammonium polyacrylate, polyacrylic acid-maleic acid copolymer, pyridine carboxylic acid, and carboxymethyl cellulose.

研磨漿料亦可進行分散處理。分散處理中可使用公知之方法,例如可列舉:均質機、超音波均質機、球磨機、珠磨機及濕式噴射磨機等。 The polishing slurry can also be subjected to dispersion treatment. A known method can be used for the dispersion treatment, and examples thereof include a homogenizer, an ultrasonic homogenizer, a ball mill, a bead mill, and a wet jet mill.

研磨漿料之pH值較佳為2~12,更佳為5~12,進而較佳為5~11。藉由pH值為2以上,而可不使研磨粒溶解而進行研磨,藉由為12以下,而可不對被研磨物產生影響而進行研磨。 The pH of the polishing slurry is preferably from 2 to 12, more preferably from 5 to 12, still more preferably from 5 to 11. By the pH value of 2 or more, polishing can be performed without dissolving the abrasive grains, and if it is 12 or less, polishing can be performed without affecting the object to be polished.

研磨漿料之體積基準中值徑(D50)較佳為0.1~20 μm,更佳為0.5~20 μm,進而較佳為0.5~10 μm。研磨漿料之中值徑係於實施例中藉由下述方法進行測定。 The volume-based median diameter (D 50 ) of the polishing slurry is preferably from 0.1 to 20 μm, more preferably from 0.5 to 20 μm, still more preferably from 0.5 to 10 μm. The median diameter of the polishing slurry was measured in the examples by the following method.

藉由研磨漿料之中值徑為0.1 μm以上,而可表現出充分之研磨速度,藉由為20 μm以下,而可抑制研磨損傷。 When the median diameter of the polishing slurry is 0.1 μm or more, a sufficient polishing rate can be exhibited, and by 20 μm or less, polishing damage can be suppressed.

[玻璃製品之製造方法] [Method for manufacturing glass products]

(研磨步驟) (grinding step)

本發明之玻璃製品之製造方法包括使用母相粒子上被覆 有氧化鈰之研磨粒或包含該研磨粒之研磨漿料而研磨玻璃的研磨步驟。 The method for producing a glass article of the present invention comprises using a coating on a mother phase particle A grinding step of grinding the glass with cerium oxide abrasive grains or a polishing slurry containing the abrasive particles.

本發明中之研磨之方法並無特別限定,例如較佳為:一面使玻璃與研磨布接觸並供給研磨粒或研磨漿料,一面使研磨布與玻璃相對地移動,而將玻璃研磨成鏡面狀。作為研磨布,例如可列舉胺基甲酸酯製研磨墊。 The method of polishing in the present invention is not particularly limited. For example, it is preferred to polish the glass into a mirror-like shape while moving the polishing cloth against the glass while bringing the glass into contact with the polishing cloth and supplying the polishing particles or the polishing slurry. . As a polishing cloth, a polishing pad made of a urethane is mentioned, for example.

(洗淨步驟) (washing step)

洗淨步驟應根據玻璃製品而適當地選擇,例如於磁碟用玻璃基板之製造中可例示如下洗淨步驟。 The washing step should be appropriately selected depending on the glass product. For example, in the production of the glass substrate for a magnetic disk, the following washing step can be exemplified.

本發明之玻璃製品之製造方法較佳為包括如下步驟:使用含有選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種的洗淨液(以下,亦稱為本發明中使用之洗淨液),對附著於玻璃上之研磨粒或研磨漿料進行洗淨。 The method for producing a glass article of the present invention preferably comprises the steps of: using a compound selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, peroxidation. A cleaning liquid (hereinafter, also referred to as a cleaning liquid used in the present invention) of at least one of hydrogen, ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate, and abrasive grains attached to the glass Or the slurry is washed.

於上述研磨步驟中,於使用於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之水溶液中為溶解性者作為研磨粒之母相粒子的情形時,利用含有選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之洗淨液洗淨玻璃,藉此可不對玻璃產生影響而獲得優異之洗淨效果。 In the above grinding step, used in selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, In the case where the aqueous solution of at least one of potassium hydroxide, sodium carbonate, and potassium carbonate is a mother particle of the abrasive grains, the solvent is selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, and oxalic acid. Washing glass with at least one of tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate, thereby eliminating It has an effect on the glass and an excellent cleaning effect.

本發明中使用之洗淨液中之選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種的含量較佳為合計為0.001~2莫耳%,更佳為0.01~1莫耳%。 The cleaning solution used in the present invention is selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, ammonia, sodium hydroxide, potassium hydroxide. The content of at least one of sodium carbonate and potassium carbonate is preferably 0.001 to 2 mol%, more preferably 0.01 to 1 mol%.

藉由將洗淨液中之選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種之含量設為合計為0.001莫耳%以上,而容易維持溶出量。又,藉由設為2莫耳%以下,而可抑制對玻璃之影響。 By selecting a cleaning solution selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia, sodium hydroxide, hydrogen The content of at least one of potassium oxide, sodium carbonate, and potassium carbonate is 0.001 mol% or more in total, and the amount of elution is easily maintained. Moreover, by setting it as 2 mol% or less, the influence on glass can be suppressed.

本發明中使用之洗淨液較佳為含有洗淨助劑。作為洗淨助劑,例如可列舉:用以降低表面張力之界面活性劑、及用以穩定地保持pH值之有緩衝效果之酸。 The cleaning solution used in the present invention preferably contains a cleaning aid. Examples of the cleaning aid include a surfactant for lowering the surface tension and an acid having a buffering effect for stably maintaining the pH.

作為界面活性劑,例如可列舉:乙炔二醇等非離子性界面活性劑、及聚丙烯酸鈉等陰離子界面活性劑等。 Examples of the surfactant include nonionic surfactants such as acetylene glycol and anionic surfactants such as sodium polyacrylate.

又,作為用以穩定地保持pH值之具有緩衝效果之酸,例如可列舉pKa為2~5且具有1個以上羧酸基之酸。具體而言,例如可列舉檸檬酸作為可期待緩衝效果之酸,此外亦可使用多種有機酸。 Further, examples of the acid having a buffering effect for stably maintaining the pH value include an acid having a pKa of 2 to 5 and having one or more carboxylic acid groups. Specifically, for example, citric acid is used as an acid which can be expected to have a buffering effect, and various organic acids can also be used.

本發明中使用之洗淨液較佳為含有水作為溶劑。作為水,例如可列舉:去離子水、超純水、帶電離子水、氫水及臭氧水等。再者,水具有控制本發明中使用之洗淨液之流動性的功能,因此其含量可結合洗淨速度等目標之洗淨 特性而適當設定,通常較佳為設為55~98質量%。 The cleaning liquid used in the present invention preferably contains water as a solvent. Examples of the water include deionized water, ultrapure water, charged ionized water, hydrogen water, and ozone water. Further, the water has a function of controlling the fluidity of the washing liquid used in the present invention, and therefore the content thereof can be combined with the washing of the target such as the washing speed. The characteristics are appropriately set, and it is usually preferably 55 to 98% by mass.

洗淨步驟中,較佳為使上述洗淨液直接接觸玻璃而進行洗淨。作為使洗淨液直接接觸玻璃之方法,例如可列舉:使洗淨液填滿洗淨槽並將玻璃放入其中之浸漬式洗淨、自噴嘴將洗淨液噴射至玻璃上之方法、及使用聚乙烯醇製之海綿之擦除洗淨等。本發明中使用之洗淨液可應用於上述任一方法,但就可進行更有效之洗淨而言,較佳為併用有超音波洗淨之浸漬式洗淨。 In the washing step, it is preferred that the washing liquid is directly contacted with the glass to be washed. As a method of directly contacting the washing liquid with the glass, for example, a method in which the washing liquid is filled in the washing tank and the glass is placed therein, and the washing liquid is sprayed from the nozzle onto the glass, and Erasing using a sponge made of polyvinyl alcohol, etc. The cleaning solution used in the present invention can be applied to any of the above methods, but in the case of more effective cleaning, it is preferred to use an ultrasonic cleaning with immersion cleaning.

洗淨步驟中,使洗淨液與玻璃接觸之時間較佳為30秒以上。藉由設為30秒以上,而可獲得充分之洗淨效果。 In the washing step, the time for bringing the washing liquid into contact with the glass is preferably 30 seconds or longer. By setting it to 30 seconds or more, sufficient washing effect can be obtained.

洗淨步驟中,洗淨液之溫度可為室溫,亦可加溫至40~80℃左右而使用,較佳為設為80℃以下。藉由將洗淨液之溫度設為80℃以下,而可防止洗淨液中所含之酸、鹼、氧化劑或還原劑發生熱分解。又,裝置之構成上,若洗淨液為接近100℃之溫度,則水之蒸發導致pH值難以控制,因此較佳為設為80℃以下。 In the washing step, the temperature of the washing liquid may be room temperature, or may be heated to about 40 to 80 ° C and used, preferably 80 ° C or less. By setting the temperature of the cleaning liquid to 80 ° C or lower, it is possible to prevent thermal decomposition of the acid, alkali, oxidizing agent or reducing agent contained in the cleaning liquid. Further, in the configuration of the apparatus, when the cleaning liquid is at a temperature close to 100 ° C, evaporation of water causes difficulty in controlling the pH, and therefore it is preferably 80 ° C or lower.

若於上述洗淨步驟後使用水或鹼性洗劑進行洗淨,則更有效果。又,亦可於上述洗淨步驟之前組合使用水之洗淨。 It is more effective if it is washed with water or an alkaline detergent after the above washing step. Further, it is also possible to use a combination of water washing before the above washing step.

(其他步驟) (other steps)

關於本發明之玻璃製品之製造方法,於玻璃製品為磁碟用玻璃基板、高品質之液晶顯示器用玻璃基板之情形等時,較佳為包括於上述洗淨步驟後使用含有膠體二氧化矽研磨粒之漿料研磨玻璃之主表面的完工研磨步驟作為其他步驟。 In the case where the glass product is a glass substrate for a magnetic disk or a glass substrate for a high-quality liquid crystal display, the method for producing the glass product of the present invention is preferably included in the cleaning step using a colloidal cerium oxide. The finished grinding step of the main surface of the grain slurry grinding glass is taken as another step.

作為藉由本發明之製造方法而製造之玻璃製品,例如可列舉:面向硬碟驅動器之磁碟基板、半導體基板、光罩基板及顯示器基板等玻璃基板,面向透鏡及CCD(charge coupled device,電荷耦合元件)之藍色濾光玻璃及覆蓋玻璃等。可藉由於利用本發明之製造方法製造之磁碟用玻璃基板之主表面上形成磁性記錄層而製造磁碟。 Examples of the glass product produced by the production method of the present invention include a disk substrate facing a hard disk drive, a semiconductor substrate, a photomask substrate, and a glass substrate such as a display substrate, and a lens and a CCD (charge coupled device). Component) blue filter glass and cover glass. The magnetic disk can be manufactured by forming a magnetic recording layer on the main surface of the glass substrate for a magnetic disk manufactured by the manufacturing method of the present invention.

實施例Example

以下,藉由實施例說明本發明,但本發明並不限定於該等。 Hereinafter, the present invention will be described by way of examples, but the invention is not limited thereto.

(1)研磨粒及研磨漿料之製備 (1) Preparation of abrasive grains and grinding slurry

[例1] [example 1]

使蒸餾水2 L、甘胺酸(關東化學公司製造,試劑)37.5 g於玻璃製槽中溶解,一面攪拌一面利用投入式加熱器將水溫保持於50℃。於其中緩慢地投入錳(關東化學公司製造,試劑)200 g,並利用網眼150 μm之篩子進行過濾。將所獲得之溶液於80℃下乾燥一晚,於大氣下以700℃焙燒8小時,而獲得氧化物。 3 L of distilled water and 37.5 g of glycine (manufactured by Kanto Chemical Co., Ltd.) were dissolved in a glass tank, and the water temperature was maintained at 50 ° C by a push-type heater while stirring. 200 g of manganese (manufactured by Kanto Chemical Co., Ltd.) was slowly introduced therein, and filtered using a sieve having a mesh size of 150 μm. The obtained solution was dried overnight at 80 ° C, and calcined at 700 ° C for 8 hours under the atmosphere to obtain an oxide.

所獲得之氧化物係氧化錳(Mn2O3)。藉由TTR-III(RIGAKU公司製造)測定所獲得之氧化錳之X射線分佈。將其結果示於圖1。 The obtained oxide is manganese oxide (Mn 2 O 3 ). The X-ray distribution of the obtained manganese oxide was measured by TTR-III (manufactured by RIGAKU Co., Ltd.). The results are shown in Fig. 1.

又,藉由ASAP2020(島津公司製造)測定所獲得之氧化錳之比表面積。將其結果示於表1。 Further, the specific surface area of the obtained manganese oxide was measured by ASAP2020 (manufactured by Shimadzu Corporation). The results are shown in Table 1.

將所獲得之氧化錳20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製 成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of obtained manganese oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes. Into the slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將藉由MT3300EXII(日機裝公司製造)測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The results obtained by measuring the volume-based median diameter (D 50 ) of the obtained polishing slurry by MT3300EXII (manufactured by Nikkiso Co., Ltd.) and pH values are shown in Table 1.

[例2] [Example 2]

將例1中獲得之氧化錳30 g裝入塑膠袋中,並利用霧化器噴霧16.9質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液6.9 g。噴霧量相對於氧化錳為23質量%,以氧化鈰換算計為2質量%。 30 g of manganese oxide obtained in Example 1 was placed in a plastic bag, and 6.9 g of an aqueous solution of 16.9% by mass of barium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) was sprayed with a nebulizer. The amount of the spray was 23% by mass based on the manganese oxide, and was 2% by mass in terms of cerium oxide.

其後,於大氣下以700℃焙燒8小時。所獲得之氧化物係被覆有CeO2之Mn2O3。與例1相同地解析所獲得之被覆有氧化鈰之氧化錳的X射線分佈。將其結果示於圖1。如圖1所示,除Mn2O3以外,亦於28.4°處觀察到屬於CeO2之波峰,確認氧化鈰析出。 Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with Mn 2 O 3 of CeO 2 . The X-ray distribution of the obtained cerium oxide-coated manganese oxide was analyzed in the same manner as in Example 1. The results are shown in Fig. 1. As shown in Fig. 1, in addition to Mn 2 O 3 , a peak belonging to CeO 2 was observed at 28.4°, and it was confirmed that cerium oxide was precipitated.

又,與例1相同地測定所獲得之被覆有氧化鈰之氧化錳的比表面積。將其結果示於表1。 Further, the specific surface area of the obtained cerium oxide-coated manganese oxide was measured in the same manner as in Example 1. The results are shown in Table 1.

將所獲得之以氧化鈰被覆之氧化錳20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of manganese oxide-coated manganese oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例3] [Example 3]

將於大氣下以700℃焙燒8小時而成之氧化鋅(高純度化 學公司製造,試劑)20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 Zinc oxide (high purity) which is baked at 700 ° C for 8 hours under the atmosphere 20 g of reagents, reagents), 378 g of distilled water, and 2 g of a dispersing agent (manufactured by LION Co., Ltd., POLITY A-550) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例4] [Example 4]

藉由霧化器將5.4質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液5.4 g噴霧於與例3相同之氧化鋅30 g上。噴霧量相對於氧化鋅為18質量%,以氧化鈰換算計為0.5質量%。其後,於大氣下以700℃焙燒8小時。所獲得之氧化物係被覆有CeO2之ZnO。 5.4 g of an aqueous solution of 5.4% by mass of ruthenium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) was sprayed onto 30 g of the same zinc oxide as in Example 3 by means of a nebulizer. The amount of the spray was 18% by mass based on the zinc oxide, and was 0.5% by mass in terms of cerium oxide. Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with ZnO of CeO 2 .

將所獲得之以氧化鈰被覆之氧化鋅20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of zinc oxide-coated zinc oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例5] [Example 5]

將例1中獲得之氧化錳50 g及9.7質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液100 g添加至茄型燒瓶中,並利用蒸發器一面使燒瓶旋轉一面進行乾燥。乙酸鈰一水合物水溶液量相對於氧化錳為200質量%,以氧化鈰換算計為10質量%。其後,於大氣下以700℃焙燒8小時。所 獲得之氧化物係被覆有CeO2之Mn2O3100 g of an aqueous solution of 50 g of manganese oxide obtained in Example 1 and 9.7% by mass of ruthenium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) was added to an eggplant type flask, and the flask was dried while being rotated by an evaporator. The amount of the aqueous solution of the cerium acetate monohydrate was 200% by mass based on the manganese oxide, and was 10% by mass in terms of cerium oxide. Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with Mn 2 O 3 of CeO 2 .

將所獲得之被覆有氧化鈰之氧化錳20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of the obtained cerium oxide-coated manganese oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例6] [Example 6]

將例1中獲得之氧化錳50 g及13.0質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液150 g添加至茄型燒瓶中,並利用蒸發器一面使燒瓶旋轉一面進行乾燥。乙酸鈰一水合物水溶液量相對於氧化錳為300質量%,以氧化鈰換算計為20質量%。其後,於大氣下以700℃焙燒8小時。所獲得之氧化物係被覆有CeO2之Mn2O3150 g of 50 g of manganese oxide obtained in Example 1 and 150 g of an aqueous solution of barium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) in an amount of 150 g were added to an eggplant type flask, and the flask was rotated while being rotated by an evaporator. The amount of the aqueous solution of the cerium acetate monohydrate was 300% by mass based on the manganese oxide, and was 20% by mass in terms of cerium oxide. Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with Mn 2 O 3 of CeO 2 .

將所獲得之被覆有氧化鈰之氧化錳20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of the obtained cerium oxide-coated manganese oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例7] [Example 7]

將於大氣下以700℃焙燒8小時而成之氧化鋅(高純度化學公司製造,試劑)50 g及9.7質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液100 g添加至茄型燒瓶中,並利 用蒸發器一面使燒瓶旋轉一面進行乾燥。乙酸鈰一水合物水溶液量相對於氧化鋅為200質量%,以氧化鈰換算計為10質量%。其後,於大氣下以700℃焙燒8小時。所獲得之氧化物係被覆有CeO2之ZnO。 Adding 100 g of zinc oxide (manufactured by High Purity Chemical Co., Ltd.) and 100 g of 9.7% by mass of ruthenium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) in an aqueous solution at 800 ° C for 8 hours in the atmosphere The flask was dried while rotating the flask while using an evaporator. The amount of the aqueous solution of the cerium acetate monohydrate was 200% by mass based on the zinc oxide, and was 10% by mass in terms of cerium oxide. Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with ZnO of CeO 2 .

將所獲得之被覆有氧化鈰之氧化鋅20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of the obtained cerium oxide-coated zinc oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

[例8] [Example 8]

將於大氣下以700℃焙燒8小時而成之氧化鋅(高純度化學公司製造,試劑)50 g及13.0質量%之乙酸鈰一水合物(關東化學公司製造,試劑)水溶液150 g添加至茄型燒瓶中,並利用蒸發器一面使燒瓶旋轉一面進行乾燥。乙酸鈰一水合物水溶液量相對於氧化鋅為300質量%,以氧化鈰換算計為20質量%。其後,於大氣下以700℃焙燒8小時。所獲得之氧化物係被覆有CeO2之ZnO。 50 g of zinc oxide (manufactured by High Purity Chemical Co., Ltd.) and 50 g of an aqueous solution of ruthenium acetate monohydrate (manufactured by Kanto Chemical Co., Ltd.) added to the eggplant at a temperature of 700 ° C for 8 hours. The flask was dried while rotating the flask while using an evaporator. The amount of the aqueous solution of the cerium acetate monohydrate was 300% by mass based on the zinc oxide, and was 20% by mass in terms of cerium oxide. Thereafter, it was baked at 700 ° C for 8 hours under the atmosphere. The obtained oxide was coated with ZnO of CeO 2 .

將所獲得之被覆有氧化鈰之氧化鋅20 g、蒸餾水378 g及分散劑(LION公司製造,POLITY A-550)2 g混合,使用均質機15分鐘而製成研磨漿料。研磨漿料中之研磨粒濃度為5質量%,分散劑濃度為0.5質量%。 20 g of the obtained cerium oxide-coated zinc oxide, 378 g of distilled water, and 2 g of a dispersing agent (POLITY A-550, manufactured by LION Co., Ltd.) were mixed, and a homogenizer was used for 15 minutes to prepare a polishing slurry. The abrasive grain concentration in the polishing slurry was 5% by mass, and the dispersant concentration was 0.5% by mass.

將與例1相同地測定所獲得之研磨漿料之體積基準中值徑(D50)而得之結果、及pH值示於表1。 The volume-based median diameter (D 50 ) of the obtained polishing slurry was measured in the same manner as in Example 1, and the results and pH values are shown in Table 1.

(2)溶解試驗 (2) Dissolution test

將1莫耳/L之硫酸30 mL與過氧化氫0.3 g、及(1)之例2中獲得之被覆有氧化鈰之氧化錳、例4中獲得之被覆有氧化鈰之氧化鋅、或氧化鈰(製品名A10,昭和電工公司製造)30 mg投入至離心管中,於室溫下利用轉台攪拌1小時。 30 mL of 1 mol/L sulfuric acid and 0.3 g of hydrogen peroxide, and cerium oxide coated with manganese oxide obtained in Example 2 of (1), zinc oxide coated with cerium oxide obtained in Example 4, or oxidized 30 mg of 铈 (product name A10, manufactured by Showa Denko Co., Ltd.) was placed in a centrifuge tube, and stirred at room temperature for 1 hour using a turntable.

攪拌後,使用離心分離機(裝置名:5220,久保田商事公司製造),以3500 rpm離心分離10分鐘,去除上清液,進而投入蒸餾水中並以相同之方式進行離心分離,進行上清液之去除。其後,於80℃之恆溫槽內乾燥3小時。乾燥後,測定各研磨粒之殘留量。根據該值求出溶解於水溶液中之研磨粒之比例(溶出量)。 After stirring, the mixture was centrifuged at 3,500 rpm for 10 minutes using a centrifugal separator (device name: 5220, manufactured by Kubota Co., Ltd.), the supernatant was removed, and the mixture was poured into distilled water and centrifuged in the same manner to carry out the supernatant. Remove. Thereafter, it was dried in a thermostat at 80 ° C for 3 hours. After drying, the residual amount of each of the abrasive grains was measured. From this value, the ratio (dissolution amount) of the abrasive grains dissolved in the aqueous solution was determined.

即,研磨粒於各種水溶液中之溶出量係設為研磨粒於各水溶液中之添加量減去殘留量所得之值,以百分率(%)表示。將其結果示於表2。 That is, the elution amount of the abrasive grains in various aqueous solutions is a value obtained by subtracting the residual amount of the abrasive grains in each aqueous solution, and is expressed by a percentage (%). The results are shown in Table 2.

如表2所示,以氧化錳或氧化鋅為母相粒子並以氧化鈰被覆該母相粒子而獲得的研磨粒與氧化鈰相比,表現出對洗淨液之較高溶解性。 As shown in Table 2, the abrasive grains obtained by using manganese oxide or zinc oxide as the mother phase particles and coating the mother phase particles with cerium oxide exhibit higher solubility to the cleaning liquid than cerium oxide.

根據該結果,受到如下啟示:以相對於含有酸、鹼、氧化劑或還原劑之洗淨液表現出較高溶解性之氧化錳、氧化鋅為母相粒子,並以氧化鈰被覆該母相粒子而成之研磨粒,其利用洗淨液之洗淨效果較高。 According to the results, it is suggested that manganese oxide and zinc oxide exhibiting higher solubility with respect to a cleaning liquid containing an acid, a base, an oxidizing agent or a reducing agent are parent phase particles, and the mother phase particles are coated with cerium oxide. The abrasive grains obtained have a high washing effect by using the washing liquid.

(3)研磨試驗 (3) Grinding test

使用(1)中獲得之例1~8之研磨漿料進行研磨試驗。實施例1中使用例2之研磨漿料,實施例2中使用例4之研磨漿料,比較例1中使用例1之研磨漿料,比較例2中使用例3之研磨漿料,實施例3中使用例5之研磨漿料,實施例4中使用例6之研磨漿料,實施例5中使用例7之研磨漿料,實施例6中使用例8之研磨漿料。 The polishing test was carried out using the polishing slurs of Examples 1 to 8 obtained in (1). The polishing slurry of Example 2 was used in Example 1, the polishing slurry of Example 4 was used in Example 2, the polishing slurry of Example 1 was used in Comparative Example 1, and the polishing slurry of Example 3 was used in Comparative Example 2, and Examples 3, the polishing slurry of Example 5 was used, the polishing slurry of Example 6 was used in Example 4, the polishing slurry of Example 7 was used in Example 5, and the polishing slurry of Example 8 was used in Example 6.

被研磨物使用玻璃,研磨壓力設為12 kPa,壓盤轉速設為40 rpm。使用12B單面研磨機(SpeedFam公司製造)作為研磨機,使用FX8H-101U(Fujibo公司製造)作為研磨墊。 Glass was used for the object to be polished, the grinding pressure was set to 12 kPa, and the platen speed was set to 40 rpm. A 12B single-side grinder (manufactured by SpeedFam Co., Ltd.) was used as a grinder, and FX8H-101U (manufactured by Fujibo Co., Ltd.) was used as a polishing pad.

研磨漿料係以100 ml/min進行循環,進行20分鐘研磨。根 據研磨前後之重量差算出研磨速度(μm/min)。將其結果示於表3。 The slurry was circulated at 100 ml/min and ground for 20 minutes. root The polishing rate (μm/min) was calculated from the difference in weight before and after the polishing. The results are shown in Table 3.

如表3所示,可知:於利用包含以氧化鈰被覆母相粒子而成之研磨粒的研磨漿料研磨玻璃之情形時,與包含僅包括母相粒子之研磨粒之研磨漿料相比,研磨速度提高。 As shown in Table 3, when the glass was polished by a polishing slurry containing abrasive grains obtained by coating the mother phase particles with cerium oxide, it was found that compared with the polishing slurry containing the abrasive grains including only the mother phase particles, The grinding speed is increased.

又,可知,氧化鈰之母相粒子之被覆量較佳為以氧化鈰換算計為0.1~25質量%。 Moreover, it is understood that the coating amount of the mother particles of cerium oxide is preferably 0.1 to 25% by mass in terms of cerium oxide.

已使用特定態樣詳細地說明了本發明,但對於業者而言很明確,可不脫離本發明之意圖與範圍而進行各種變更及變形。再者,本申請案係基於2011年9月9日提出申請之日本專利申請案(日本專利特願2011-197379),藉由引用而援引其整體。 The present invention has been described in detail with reference to the specific embodiments of the invention. In addition, the present application is based on a Japanese patent application filed on Sep. 9, 2011 (Japanese Patent Application No. 2011-197379).

產業上之可利用性Industrial availability

本發明之研磨粒及研磨漿料可用於面向硬碟驅動器之磁碟基板、半導體基板、光罩基板及顯示器基板等玻璃基板 及面向透鏡及CCD之藍色濾光玻璃及覆蓋玻璃等玻璃製品的製造中之研磨步驟中。 The abrasive grains and polishing slurry of the present invention can be used for a glass substrate such as a disk substrate, a semiconductor substrate, a photomask substrate, and a display substrate facing a hard disk drive. And in the grinding step in the manufacture of glass products such as blue filter glass and cover glass for lenses and CCDs.

圖1表示氧化錳之X射線分佈。 Figure 1 shows the X-ray distribution of manganese oxide.

Claims (11)

一種研磨粒,其係於母相粒子上被覆有氧化鈰者。 An abrasive granule which is coated with cerium oxide on a mother phase particle. 如請求項1之研磨粒,其中上述母相粒子於選自硫酸、鹽酸、硝酸、胺基磺酸、磷酸、草酸、酒石酸、檸檬酸、甲酸、乙醇酸、乙酸、抗壞血酸、過氧化氫、氨、氫氧化鈉、氫氧化鉀、碳酸鈉及碳酸鉀中之至少1種的水溶液中為溶解性。 The abrasive particle of claim 1, wherein the parent phase particles are selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, aminosulfonic acid, phosphoric acid, oxalic acid, tartaric acid, citric acid, formic acid, glycolic acid, acetic acid, ascorbic acid, hydrogen peroxide, ammonia. Solubility is obtained in an aqueous solution of at least one of sodium hydroxide, potassium hydroxide, sodium carbonate, and potassium carbonate. 如請求項1或2之研磨粒,其中上述母相粒子包含選自由氧化錳及氧化鋅所組成之群中之至少1種氧化物。 The abrasive grain of claim 1 or 2, wherein the parent phase particles comprise at least one oxide selected from the group consisting of manganese oxide and zinc oxide. 如請求項1至3中任一項之研磨粒,其中被覆於上述母相粒子上之氧化鈰相對於母相粒子為0.1質量%~25質量%。 The abrasive grains according to any one of claims 1 to 3, wherein the cerium oxide coated on the mother phase particles is from 0.1% by mass to 25% by mass based on the mother particles. 如請求項1至4中任一項之研磨粒,其中被覆於上述母相粒子上之氧化鈰相對於母相粒子為0.1質量%~20質量%。 The abrasive particles according to any one of claims 1 to 4, wherein the cerium oxide coated on the mother phase particles is from 0.1% by mass to 20% by mass based on the mother particles. 如請求項1至5中任一項之研磨粒,其比表面積為0.1~20 m2/g。 The abrasive particles according to any one of claims 1 to 5, which have a specific surface area of 0.1 to 20 m 2 /g. 一種研磨漿料,其包含如請求項1至6中任一項之研磨粒。 An abrasive slurry comprising the abrasive particles of any one of claims 1 to 6. 一種研磨粒之製造方法,其係於母相粒子上被覆有氧化鈰之研磨粒之製造方法,且其依序包括以下(1)~(3)步驟:(1)使鈰化合物溶解於水中而獲得鈰源水溶液之步驟;(2)將步驟(1)中獲得之鈰源水溶液被覆於母相粒子上而獲得由鈰源水溶液被覆之母相粒子的步驟;(3)對步驟(2)中獲得之由鈰源水溶液被覆之母相粒子進行焙燒而獲得經氧化鈰被覆之母相粒子的步驟。 A method for producing abrasive grains, which is a method for producing abrasive particles coated with cerium oxide on mother particles, and which comprises the following steps (1) to (3): (1) dissolving the cerium compound in water a step of obtaining an aqueous solution of a ruthenium source; (2) a step of coating the aqueous solution of the ruthenium source obtained in the step (1) on the mother phase particles to obtain a mother phase particle coated with the aqueous solution of the ruthenium source; (3) in the step (2) The obtained mother phase particles coated with an aqueous solution of cerium source are calcined to obtain cerium oxide-coated mother phase particles. 如請求項8之研磨粒之製造方法,其中於上述步驟(2)中, 將鈰源水溶液噴霧於母相粒子上而獲得由鈰源水溶液被覆之母相粒子。 The method for producing abrasive grains according to claim 8, wherein in the above step (2), The cerium source aqueous solution was sprayed onto the mother phase particles to obtain mother phase particles coated with the hydrazine source aqueous solution. 如請求項8或9之研磨粒之製造方法,其中上述鈰化合物為選自由乙酸鈰、硝酸鈰、氫氧化鈰、硫酸鈰所組成之群中之至少1種。 The method for producing abrasive grains according to claim 8 or 9, wherein the cerium compound is at least one selected from the group consisting of cerium acetate, cerium nitrate, cerium hydroxide, and barium sulfate. 一種玻璃製品之製造方法,其包括使用如請求項1至6中任一項之研磨粒或如請求項7之研磨漿料研磨玻璃的步驟。 A method of producing a glass article, comprising the step of grinding the glass using the abrasive particles of any one of claims 1 to 6 or the abrasive slurry of claim 7.
TW101132833A 2011-09-09 2012-09-07 Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products TW201321492A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011197379 2011-09-09

Publications (1)

Publication Number Publication Date
TW201321492A true TW201321492A (en) 2013-06-01

Family

ID=47831995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101132833A TW201321492A (en) 2011-09-09 2012-09-07 Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products

Country Status (3)

Country Link
JP (1) JPWO2013035545A1 (en)
TW (1) TW201321492A (en)
WO (1) WO2013035545A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104673101A (en) * 2015-02-12 2015-06-03 柳州豪祥特科技有限公司 Preparation process of rare-earth polishing powder
TWI553153B (en) * 2013-06-28 2016-10-11 聖高拜陶器塑膠公司 Nickel coated diamond particles and method of making said particles
TWI804659B (en) * 2018-07-26 2023-06-11 日商力森諾科股份有限公司 Slurry and grinding method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6060166B2 (en) * 2012-08-28 2017-01-11 Hoya株式会社 Manufacturing method of glass substrate for magnetic disk
JP6033750B2 (en) * 2013-10-03 2016-11-30 三井金属鉱業株式会社 Abrasive material, method for producing the same, and abrasive slurry containing the same
US20160319131A1 (en) * 2013-12-24 2016-11-03 Sakai Chemical Industry Co., Ltd. Cerium oxide-coated zinc oxide particle, method for producing the same, ultraviolet shielding agent, and cosmetic
JP6332041B2 (en) * 2014-01-20 2018-05-30 信越化学工業株式会社 Method for producing synthetic quartz glass substrate
JP6493227B2 (en) 2014-02-07 2019-04-03 堺化学工業株式会社 Hexagonal plate-like zinc oxide particles, method for producing the same, cosmetics, filler, resin composition, infrared reflector, and coating composition
JP6744295B2 (en) * 2015-04-01 2020-08-19 三井金属鉱業株式会社 Abrasive materials and slurries

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3956587B2 (en) * 1999-11-18 2007-08-08 Hoya株式会社 Cleaning method for glass substrate for magnetic disk
EP1238417A1 (en) * 1999-11-23 2002-09-11 Corning Incorporated Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics
DE10204471C1 (en) * 2002-02-05 2003-07-03 Degussa Aqueous dispersion of cerium oxide-coated doped silica powder, used for chemical-mechanical polishing of semiconductor substrate or coating or in shallow trench insulation, is obtained by mixing doped silica core with cerium salt solution
EP2438133B1 (en) * 2009-06-05 2018-07-11 Basf Se Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553153B (en) * 2013-06-28 2016-10-11 聖高拜陶器塑膠公司 Nickel coated diamond particles and method of making said particles
CN104673101A (en) * 2015-02-12 2015-06-03 柳州豪祥特科技有限公司 Preparation process of rare-earth polishing powder
TWI804659B (en) * 2018-07-26 2023-06-11 日商力森諾科股份有限公司 Slurry and grinding method

Also Published As

Publication number Publication date
WO2013035545A1 (en) 2013-03-14
JPWO2013035545A1 (en) 2015-03-23

Similar Documents

Publication Publication Date Title
TW201321492A (en) Abrasive grains, manufacturing process therefor, polishing slurry and process for manufacturing glass products
KR101760529B1 (en) RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP)
US9410063B2 (en) Polishing slurry including zirconia particles and a method of using the polishing slurry
EP2260013B1 (en) Ceria material and method of forming same
JP5441578B2 (en) Polishing liquid composition
US10011752B2 (en) Production method for polishing-material particles
WO2017114312A1 (en) Method for preparing cerium oxide and application thereof in chemical-mechanical polishing (cmp)
JP2016088940A (en) Polishing agent particle and production method therefor, polishing agent slurry and polishing work method
TW201738337A (en) Surface treatment composition, method for manufacturing surface treatment composition, surface treatment method, and method for manufacturing semiconductor substrate
JP2005500173A (en) Abrasive slurry containing silica-coated ceria
CN109104866A (en) The grinding method of synthetic quartz glass substrate grinding agent and synthetic quartz glass substrate
JP6646062B2 (en) Polishing agent for synthetic quartz glass substrate, method for producing the same, and method for polishing synthetic quartz glass substrate
CN107532066A (en) The Ginding process of synthetic quartz glass substrate grinding agent and synthetic quartz glass substrate
JP6936183B2 (en) Abrasives for synthetic quartz glass substrates and their manufacturing methods, and methods for polishing synthetic quartz glass substrates
WO2018190077A1 (en) Synthetic quartz glass substrate polishing agent, production method therefor, and synthetic quartz glass substrate polishing method
CN106915760B (en) Preparation method of cerium oxide and application of cerium oxide in STI polishing field
JP4954338B1 (en) Manufacturing method of glass products
TW201641464A (en) Negatively charged substrate polishing method and manufacturing method of negatively charged substrate with high surface smoothness
JP2001107028A (en) Abrasive material and abrasion process
CN113120942A (en) Synthesis method of spindle-shaped cerium carbonate and cerium oxide thereof
TW201533184A (en) Polishing agent, polishing method, and manufacturing method of semiconductor integrated circuit device
JP2014118468A (en) Polishing abrasive grain and its manufacturing method, manufacturing method of polishing slurry and glass substrate
JP5861277B2 (en) Zirconia abrasive
JP6916192B2 (en) Polishing composition, polishing method using it, and manufacturing method of semiconductor substrate
JPWO2013008639A1 (en) Manufacturing method of glass products