TW201321331A - Manufacturing method of ceramic heat dissipation substrate - Google Patents

Abstract

A manufacturing method of a ceramic heat dissipation substrate is disclosed, and the mentioned ceramic heat dissipation substrate is mainly made of a sintered high-purity silicon carbide powder material. The SiC powder material is agitated with a low-temperature bonding agent, followed by preforming, sintering, and then immersed into an acidic solvent to proceed etching effect eliminating oxide film formed on the edge and the closed pores formed in the substrate during the process of sintering, thereby improving the mentioned oxide film and closed pores as well as the problems of thermal resistance increased in the ceramic heat dissipation substrate and thermal conductivity reduction so as to make the ceramic heat dissipation substrate made by the present invention have better heat dissipation effect.

Description

Method for manufacturing ceramic heat dissipation substrate

The invention relates to a method for manufacturing a ceramic heat-dissipating substrate, in particular to a product for producing a product or an oxide produced by a ceramic heat-dissipating substrate in a sintering process by acid etching, thereby improving the heat-dissipating effect of the ceramic heat-dissipating substrate. method.

With the development of science and technology, high-tech components are all demanding small size and high-performance specifications, but the pursuit of small volume and high performance, accompanied by the stability of high-tech components, Tanruo's high-tech components have high performance, but they often suffer from abnormal or sudden damage and are not acceptable to users. Therefore, how to improve the efficiency of high-tech components and improve the stability of operation is a big In addition, high-tech components, under high-efficiency operation, usually generate a large amount of waste heat at the same time. If the waste heat is not effectively dissipated, the components will not be able to operate normally. Moreover, most of the current waste heat dissipation technologies are A heat-dissipating structure made of a highly thermally conductive metal or a material with high thermal conductivity is installed on the periphery of a high-tech component to dissipate the waste heat generated by the operation of high-tech components. However, with the technology Development, in addition to the above-mentioned waste heat dissipation technology, there is also an embodiment in which a heat dissipation structure is made of a ceramic heat dissipation substrate to achieve the same The preferred heat dissipation effect, the above-mentioned ceramic heat-dissipating substrate, is exemplified by ruthenium carbide. In the process of sintering, ruthenium carbide generates an oxide film due to a chemical reaction, and if the ceramic heat-dissipating substrate passes through the liquid phase. The sintered process produces a closed hole in the substrate. Please refer to Figure 1 for a cross-sectional view of the existing ceramic heat-dissipating substrate. As shown in the figure, the above-mentioned After the sintering is completed, the surface of the ceramic heat-dissipating substrate 10 is formed with the above-mentioned oxide film 101, and in the ceramic heat-dissipating substrate 10, the aggregate and the bonding agent are unevenly dispersed or liquid-phase combined due to the liquid phase sintering process. Excessive addition of the agent produces more than one closed pore 102. The formation of the oxide film 101 also causes the thermal conductivity of the ceramic heat-dissipating substrate 10 to decrease. The closed pores 102 further increase the overall thermal resistance of the ceramic heat-dissipating substrate 10, so that the ceramic The heat dissipation efficiency of the heat dissipation substrate 10 is greatly reduced. Further, in addition to the liquid phase sintering described above, another solid phase sintering embodiment can achieve the purpose of sintering in both embodiments, but the solid phase sintering is effective. When applying, it is necessary to use a powder with a small powder diameter, and in the case of high-temperature sintering, the increase in temperature drives the oxidation of the powder during sintering, and the thermal conductivity of the prepared ceramic heat-dissipating substrate 10 is lowered. Therefore, if the oxide generated by the ceramic heat-dissipating substrate during sintering and the closed pores can be removed, the heat dissipation effect of the ceramic heat-dissipating substrate can be improved.

In view of the above problems, the present inventors have been engaged in the research and development of related ceramic heat-dissipating substrates for many years, and have carried out relevant analysis and research on the process of the existing ceramic heat-dissipating substrate, and can solve the above problems. Accordingly, the main purpose of the present invention is The invention provides a manufacturing method for improving the heat dissipation effect of the ceramic heat dissipating substrate by etching the product or oxide generated by the ceramic heat dissipating substrate during the sintering process by acid etching.

In order to achieve the above object, the method for manufacturing a ceramic heat-dissipating substrate according to the present invention, which is referred to as a ceramic heat-dissipating substrate, is mainly formed by sintering a high-purity tantalum carbide powder, and the initial, carbonized tantalum powder system is implemented. Mixing with a low temperature binder in a specific ratio, mixing and mixing into a cerium carbide slurry, the cerium carbide slurry is subjected to granulation, plastic blanking, etc., and finally sintered to the claimed ceramic heat-dissipating substrate to complete sintering The substrate after the step is further immersed in an acidic solvent to perform acid etching on the ceramic heat-dissipating substrate, and the acid etching is generated, and the ceramic heat-dissipating substrate is etched during the sintering process. The material or the oxide is used to increase the heat exchange efficiency of the ceramic heat dissipation substrate and the atmosphere, thereby improving heat dissipation efficiency and reducing thermal resistance.

The above description of the present invention and the following description of the embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide further explanation of the scope of the invention.

Please refer to "Fig. 2", which is a schematic flow chart of the steps of the present invention. The ceramic heat-dissipating substrate referred to in the present invention is mainly made of a tantalum carbide material by the manufacturing method disclosed in the present invention. In order to make the prepared ceramic heat-dissipating substrate, the heat-dissipating effect can be better. Therefore, in the practice of the present invention, the tantalum carbide powder is selected from tantalum carbide powder having a purity ratio of about 90% or more. Moreover, the powder particle size is approximately 400 mesh to 600 mesh, so that a preferred ceramic heat-dissipating substrate can be produced. Further, the detailed implementation process of the manufacturing method referred to in the present invention is as follows:

(1) Powder Stirring 21: Initially, the present invention mixes the tantalum carbide powder with a low temperature binder in a specific ratio in a ratio of 90% to 95% of the total proportion of the tantalum carbide powder. The low-temperature bonding agent accounts for about 5% to 10% of the total proportion. Further, the low-temperature bonding agent may be a bismuth acid glass or the like. Further, after the cerium carbide powder is mixed with the low-temperature bonding agent, the present invention is further added. There is a solution, such as water, and the ratio of the solution is about 30% to 60% of the total mixture of the tantalum carbide powder and the low-temperature binder. After mixing, the solution is placed in a ball mill and stirred for a suitable time. After that, it is produced as a cerium carbide slurry, and the stirring time may be 12 hours or more, preferably 12 hours or more;

(2) Slurry granulation 22: After the above-mentioned cerium carbide slurry is stirred for a suitable period of time, it is further placed in a spray drying device, and after the operation of the spray drying device, the cerium carbide slurry Made into granules;

(3) The blank molding 23: the slurry granulation step 22, after the cerium carbide slurry is granulated, the granulated carbonization is performed by a press molding device or a high pressure molding device.矽, the plastic embryo is formed into a shape after sintering, and after the implementation of this step, half of the green body is produced;

(4) Sintering molding 24: As described in the step 23 of the green body molding, after the semi-blanch system is obtained, it is quickly sintered at a low temperature to form a ceramic heat-dissipating substrate. Please refer to the "Figure 3" The figure shows a schematic diagram of the ceramic heat-dissipating substrate of the present invention (1). As shown in the figure, the semi-green body made of tantalum carbide is also subjected to high temperature or other factors during sintering. An oxide film 301 is formed on the surface of the finished ceramic heat dissipating substrate 30, or a plurality of closed holes 302 of different sizes are formed in the ceramic heat dissipating substrate 30, and the oxide film 301 and the closed hole 302 are as follows. As described above, the formation of the two also causes the thermal conductivity of the ceramic heat-dissipating substrate 30 to decrease, and the thermal resistance increases. Further, the sintering referred to in this step may have a temperature of between 800 and 900 degrees;

(5) performing acid etching 25: in the step of sintering forming 24, the present invention further immerses the ceramic heat-dissipating substrate 30 obtained in the above step in an acidic solvent, and the acidic solvent may be a nitric acid An acidic solvent such as hydrochloric acid or monosulfuric acid, but the above several acidic solvents are only examples, and are not limited thereto. Moreover, when the ceramic heat-dissipating substrate 30 is immersed, it is subjected to an acidic solvent and is acid-etched. In the phenomenon, when the acid etching occurs, the oxide film 301 formed on the surface of the ceramic heat-dissipating substrate 30 is etched, and part of the surface edge of the ceramic heat-dissipating substrate 30 is further etched, so that the film is formed in the ceramic heat-dissipating substrate 30. The hole 302 is damaged, and the acid-cooled ceramic heat-dissipating substrate 30 is shown in FIG. 4, which is a schematic view of the ceramic heat-dissipating substrate of the present invention (2). The time for dissipating the substrate 30 is preferably about 24 hours, but not limited thereto. After the immersion is completed, the ceramic heat dissipating substrate 30 is further cleaned, so that the ceramic heat dissipation referred to in the present invention is prepared. Substrate 30.

As shown in "Fig. 4", the surface of the fabricated ceramic heat-dissipating substrate 30 is not covered by the oxide film, and can produce a better thermal conductivity, and the ceramic heat-dissipating substrate 30 is caused by the etching action. The edge of the surface is eroded and the closed pores are destroyed. As a result, the surface of the ceramic heat-dissipating substrate 30 is uneven, and the surface area for heat exchange between the ceramic heat-dissipating substrate 30 and the atmosphere is increased. The heat dissipation effect of the ceramic heat dissipation substrate 30 itself is improved, and the destruction of the hole is closed, and the thermal resistance of the ceramic heat dissipation substrate 30 itself is lowered.

In summary, the method for manufacturing a ceramic heat-dissipating substrate according to the present invention, the ceramic heat-dissipating substrate is mainly composed of a high-purity tantalum carbide powder, and when implemented, the tantalum carbide powder and a low-temperature binder Mixing in a specific ratio, after mixing for a suitable time, a cerium carbide slurry is prepared, and the cerium carbide slurry is subjected to granulation, plasticating, etc., and finally, the ceramic heat dissipation base referred to in the present invention is formed by sintering. At this time, the sintered ceramic heat-dissipating substrate is further immersed in an acidic solvent, and the acidic solvent acts on the ceramic heat-dissipating substrate to etch the ceramic heat-dissipating substrate during the sintering process. The oxide film or the closed hole, so that the surface of the ceramic heat-dissipating substrate is not affected by the oxide film, and the thermal conductivity is lowered, and the damage of the closed hole also causes the thermal resistance of the ceramic heat-dissipating substrate to decrease, and after the acid etching The ceramic heat-dissipating substrate has an increased surface area for heat exchange with the atmosphere, thereby improving the heat-dissipating efficiency of the ceramic heat-dissipating substrate, and accordingly, according to the present invention, it is indeed possible to provide a The method of manufacturing a heat dissipation effect to enhance the heat dissipation substrate of a ceramic.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention , should be covered by the scope of this creation patent.

In summary, the effects of the present invention are patents such as "industry availability," "novelty," and "progressiveness" of the invention; the applicant filed an invention patent with the bureau in accordance with the provisions of the Patent Law. Application.

10. . . Ceramic heat sink substrate

101. . . Oxide film

102. . . Closed hole

twenty one. . . Powder mixing

twenty two. . . Slurry granulation

twenty three. . . Blank molding

twenty four. . . Sintering

25. . . Acid etching

30. . . Ceramic heat sink substrate

301. . . Oxide film

302. . . Closed hole

Figure 1 is a schematic cross-sectional view of a conventional ceramic heat sink substrate.

Figure 2 is a schematic flow chart of the steps of the present invention.

Fig. 3 is a schematic view (1) of the ceramic heat-dissipating substrate of the present invention.

Figure 4 is a schematic view (2) of the ceramic heat-dissipating substrate of the present invention.

twenty one. . . Powder mixing

twenty two. . . Slurry granulation

twenty three. . . Blank molding

twenty four. . . Sintering

25. . . Acid etching

Claims (10)

A method for manufacturing a ceramic heat-dissipating substrate, wherein the ceramic heat-dissipating substrate is made of a tantalum carbide powder, the manufacturing method comprising: a powder mixing step, the tantalum carbide powder is combined with a low temperature Mixing, and during the mixing process, a solution is added to prepare a cerium carbide slurry by a ball milling device; a slurry granulation step, the cerium carbide slurry is further processed by a spray drying device Forming the cerium carbide slurry into a granular shape; forming a granule-shaped cerium carbide slurry into a granular body by a press molding device; and forming a semi-finished body by a press molding step; After the green body is sintered, the ceramic heat dissipation substrate is formed; and an acid etching step is performed, the ceramic heat dissipation substrate is immersed in an acidic solvent, and the acidic solvent generates an acid etching effect on the surface of the ceramic heat dissipation substrate, A product generated by the ceramic heat-dissipating substrate during the sintering process is etched away. The method for producing a ceramic heat-radiating substrate according to the first aspect of the invention, wherein the tantalum carbide powder is a tantalum carbide powder having a purity of 90% or more. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the powder of the tantalum carbide has a particle diameter of about 400 mesh to 600 mesh. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the ratio of the tantalum carbide powder to the low-temperature binder is such that the niobium carbide powder accounts for about 90% to 95% of the total proportion. And the low temperature binder accounts for about 5% to 10% of the total proportion. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the solution is added in an amount of 30% to 60% by weight of the cerium carbide powder and the low-temperature binder. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the ceramic heat-dissipating substrate is immersed in the acidic solvent for 24 hours or longer. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the acidic solvent is mononitrogen. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the acidic solvent is monohydrochloric acid. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the acidic solvent is monosulfuric acid. The method for producing a ceramic heat-dissipating substrate according to claim 1, wherein the ceramic heat-dissipating substrate is an oxide film produced during the sintering process.