TW201321331A - Manufacturing method of ceramic heat dissipation substrate - Google Patents
Manufacturing method of ceramic heat dissipation substrate Download PDFInfo
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一種陶瓷散熱基材的製造方法,本發明尤指一種藉由酸蝕作用,蝕去陶瓷散熱基材於燒結過程中所產生的生成物或氧化物,以提升陶瓷散熱基材之散熱效果的製造方法。The invention relates to a method for manufacturing a ceramic heat-dissipating substrate, in particular to a product for producing a product or an oxide produced by a ceramic heat-dissipating substrate in a sintering process by acid etching, thereby improving the heat-dissipating effect of the ceramic heat-dissipating substrate. method.
隨著科技腳步的發展,高科技零組件無一不講求微小體積且具有高效能的規格,但不斷追求微小體積以及高效能的表現,伴隨而來的是高科技零組件作動時的穩定度,坦若高科技零組件具有高效能的表現,卻時常發生異常或突發性損毀,亦無法被使用者所接受,因此如何在提升高科技零組件效率的同時,提升作動穩定度實為一大課題,又,高科技零組件在高效能作動下,通常同時產生大量的廢熱,若不將此廢熱有效的發散,便容易導致零組件無法正常的作動,又,目前的廢熱發散技術大多係以高導熱性金屬材或具高導熱特性之材質所製成的散熱結構,裝設於一高科技零組件的周緣,以將高科技零組件作動時所產生的廢熱發散,然而,隨著科技的發展,除上述的廢熱發散技術之外,現今亦有一種以陶瓷散熱基材製成散熱結構的實施方式,以達成相同或較佳的散熱效果,上述所稱的陶瓷散熱基材,在此係以碳化矽進行舉例,碳化矽在燒結的過程中,會因化學反應而生成有氧化膜,若陶瓷散熱基材透過液相燒結的製程所製得,更會於基材內生成有封閉孔洞,請參閱「第1圖」,圖中所示係為現有陶瓷散熱基材之剖面示意圖,如圖所示,上述所稱的陶瓷散熱基材10,燒結完成後,表緣生成有上述所稱的氧化膜101,而陶瓷散熱基材10內則因液相燒結製程中,骨材與結合劑分散不均或者是液相結合劑添加過量,生成有一個以上的封閉孔洞102,氧化膜101的生成亦會導致陶瓷散熱基材10的熱傳導率下降,封閉孔洞102更會導致陶瓷散熱基材10的整體熱阻提高,使得陶瓷散熱基材10的散熱效率大幅降低,再者,除上述的液相燒結之外,另一固相燒結的實施方式,兩種實施方式雖皆可達成燒結的目的,但固相燒結於實施時,須採用粉徑較小的粉材,且在高溫燒結的情況下,溫度的提升會驅使粉材燒結時的氧化劇增,進而導致所製成的陶瓷散熱基材10其熱傳導率下降,故,若能除去陶瓷散熱基材於燒結時所產生的氧化物以及封閉孔洞,必能提升陶瓷散熱基材所具有的散熱效果。With the development of science and technology, high-tech components are all demanding small size and high-performance specifications, but the pursuit of small volume and high performance, accompanied by the stability of high-tech components, Tanruo's high-tech components have high performance, but they often suffer from abnormal or sudden damage and are not acceptable to users. Therefore, how to improve the efficiency of high-tech components and improve the stability of operation is a big In addition, high-tech components, under high-efficiency operation, usually generate a large amount of waste heat at the same time. If the waste heat is not effectively dissipated, the components will not be able to operate normally. Moreover, most of the current waste heat dissipation technologies are A heat-dissipating structure made of a highly thermally conductive metal or a material with high thermal conductivity is installed on the periphery of a high-tech component to dissipate the waste heat generated by the operation of high-tech components. However, with the technology Development, in addition to the above-mentioned waste heat dissipation technology, there is also an embodiment in which a heat dissipation structure is made of a ceramic heat dissipation substrate to achieve the same The preferred heat dissipation effect, the above-mentioned ceramic heat-dissipating substrate, is exemplified by ruthenium carbide. In the process of sintering, ruthenium carbide generates an oxide film due to a chemical reaction, and if the ceramic heat-dissipating substrate passes through the liquid phase. The sintered process produces a closed hole in the substrate. Please refer to Figure 1 for a cross-sectional view of the existing ceramic heat-dissipating substrate. As shown in the figure, the above-mentioned After the sintering is completed, the surface of the ceramic heat-dissipating substrate 10 is formed with the above-mentioned oxide film 101, and in the ceramic heat-dissipating substrate 10, the aggregate and the bonding agent are unevenly dispersed or liquid-phase combined due to the liquid phase sintering process. Excessive addition of the agent produces more than one closed pore 102. The formation of the oxide film 101 also causes the thermal conductivity of the ceramic heat-dissipating substrate 10 to decrease. The closed pores 102 further increase the overall thermal resistance of the ceramic heat-dissipating substrate 10, so that the ceramic The heat dissipation efficiency of the heat dissipation substrate 10 is greatly reduced. Further, in addition to the liquid phase sintering described above, another solid phase sintering embodiment can achieve the purpose of sintering in both embodiments, but the solid phase sintering is effective. When applying, it is necessary to use a powder with a small powder diameter, and in the case of high-temperature sintering, the increase in temperature drives the oxidation of the powder during sintering, and the thermal conductivity of the prepared ceramic heat-dissipating substrate 10 is lowered. Therefore, if the oxide generated by the ceramic heat-dissipating substrate during sintering and the closed pores can be removed, the heat dissipation effect of the ceramic heat-dissipating substrate can be improved.
有鑒於上述問題,本發明人係以多年來從事相關陶瓷散熱基材的研製,針對現有陶瓷散熱基材的製程,進行相關的分析與研究,期能解決上述問題;緣此,本發明主要目的在於提供一種藉由酸蝕作用,蝕去陶瓷散熱基材於燒結過程中所產生的生成物或氧化物,以提升陶瓷散熱基材之散熱效果的製造方法。In view of the above problems, the present inventors have been engaged in the research and development of related ceramic heat-dissipating substrates for many years, and have carried out relevant analysis and research on the process of the existing ceramic heat-dissipating substrate, and can solve the above problems. Accordingly, the main purpose of the present invention is The invention provides a manufacturing method for improving the heat dissipation effect of the ceramic heat dissipating substrate by etching the product or oxide generated by the ceramic heat dissipating substrate during the sintering process by acid etching.
為達上述目的,本發明所稱之陶瓷散熱基材的製造方法,其所稱的陶瓷散熱基材主要係由一高純度的碳化矽粉材燒結而成,實施的初始,碳化矽粉材係與一低溫結合劑各呈特定比例以進行混合,並拌攪成一碳化矽漿料,碳化矽漿料再經過造粒、塑坯等步驟,最後燒結成本發明所稱的陶瓷散熱基材,完成燒結步驟之後的基材,更進一步浸泡於一酸性溶劑之中,以對陶瓷散熱基材進行酸蝕的作用,酸蝕產生的同時,會蝕去陶瓷散熱基材於燒結過程中,所產生的生成物或氧化物,藉此,以提高陶瓷散熱基板與大氣進行熱交換的工作面積,進而得以提升散熱效率以及降低熱阻。In order to achieve the above object, the method for manufacturing a ceramic heat-dissipating substrate according to the present invention, which is referred to as a ceramic heat-dissipating substrate, is mainly formed by sintering a high-purity tantalum carbide powder, and the initial, carbonized tantalum powder system is implemented. Mixing with a low temperature binder in a specific ratio, mixing and mixing into a cerium carbide slurry, the cerium carbide slurry is subjected to granulation, plastic blanking, etc., and finally sintered to the claimed ceramic heat-dissipating substrate to complete sintering The substrate after the step is further immersed in an acidic solvent to perform acid etching on the ceramic heat-dissipating substrate, and the acid etching is generated, and the ceramic heat-dissipating substrate is etched during the sintering process. The material or the oxide is used to increase the heat exchange efficiency of the ceramic heat dissipation substrate and the atmosphere, thereby improving heat dissipation efficiency and reducing thermal resistance.
以上關於本發明內容之說明及以下之實施方式之說明,係用以示範與解釋本創作之精神與原理,並且提供本發明之專利範圍更進一步解釋。The above description of the present invention and the following description of the embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide further explanation of the scope of the invention.
請參閱「第2圖」,圖中所示係為本發明之步驟流程示意圖,本發明所稱的陶瓷散熱基材,其主要係由一碳化矽粉材經本發明所揭露之製造方法所製成,而為使所製得的陶瓷散熱基材製成後,可具有較佳的散熱效果,因此,本發明實施時,碳化矽粉材係選用純度比約為90%以上之碳化矽粉材,且粉體粒徑約略為400目至600目,如此一來,便可製成較佳的陶瓷散熱基材,又,本創作所稱的製造方法,其詳細的實施流程係如下所示:Please refer to "Fig. 2", which is a schematic flow chart of the steps of the present invention. The ceramic heat-dissipating substrate referred to in the present invention is mainly made of a tantalum carbide material by the manufacturing method disclosed in the present invention. In order to make the prepared ceramic heat-dissipating substrate, the heat-dissipating effect can be better. Therefore, in the practice of the present invention, the tantalum carbide powder is selected from tantalum carbide powder having a purity ratio of about 90% or more. Moreover, the powder particle size is approximately 400 mesh to 600 mesh, so that a preferred ceramic heat-dissipating substrate can be produced. Further, the detailed implementation process of the manufacturing method referred to in the present invention is as follows:
(1) 粉材攪拌21:實施的初始,本發明係將碳化矽粉材與一低溫結合劑以特定比例進行混合,其比例為,碳化矽粉材約佔整體比例的90%至95%,而低溫結合劑約佔整體比例的5%至10%,又,所述的低溫結合劑係可為一矽酸玻璃等,又,碳化矽粉材與低溫結合劑混合後,本發明係進一步添加有一溶液,例如水,而此溶液的比例約佔碳化矽粉材與低溫結合劑混合之整體的30%至60%,三者混合後,係置於一球磨裝置之中,經適當時間的攪拌後,係產生為一碳化矽漿料,所述的攪拌時間係可為12小時或12小時以上為較佳;(1) Powder Stirring 21: Initially, the present invention mixes the tantalum carbide powder with a low temperature binder in a specific ratio in a ratio of 90% to 95% of the total proportion of the tantalum carbide powder. The low-temperature bonding agent accounts for about 5% to 10% of the total proportion. Further, the low-temperature bonding agent may be a bismuth acid glass or the like. Further, after the cerium carbide powder is mixed with the low-temperature bonding agent, the present invention is further added. There is a solution, such as water, and the ratio of the solution is about 30% to 60% of the total mixture of the tantalum carbide powder and the low-temperature binder. After mixing, the solution is placed in a ball mill and stirred for a suitable time. After that, it is produced as a cerium carbide slurry, and the stirring time may be 12 hours or more, preferably 12 hours or more;
(2) 漿料造粒22:承上所述,上述碳化矽漿料經適當時間的攪拌後,進一步將其置於一噴霧乾燥裝置之中,經噴霧乾燥裝置的作動後,碳化矽漿料被製成粒狀;(2) Slurry granulation 22: After the above-mentioned cerium carbide slurry is stirred for a suitable period of time, it is further placed in a spray drying device, and after the operation of the spray drying device, the cerium carbide slurry Made into granules;
(3) 坯體塑型23:承漿料造粒22步驟所述,碳化矽漿料被製成粒狀之後,再藉由一加壓成型裝置或一高壓成型裝置,以將粒狀的碳化矽,塑胚成燒結後所欲成型的態樣,而本步驟實施完成後,係產生有一半成坯體;(3) The blank molding 23: the slurry granulation step 22, after the cerium carbide slurry is granulated, the granulated carbonization is performed by a press molding device or a high pressure molding device.矽, the plastic embryo is formed into a shape after sintering, and after the implementation of this step, half of the green body is produced;
(4) 燒結成型24:承坯體塑型23步驟所述,半成坯體製得後,便將其以低溫快速燒結,製成一陶瓷散熱基材,請搭配參閱「第3圖」所示,圖中所示係為本發明之陶瓷散熱基材製成示意圖(一),如圖所示,碳化矽所製成的半成坯體於燒結過程中,亦會因高溫又或是其他因素,於製成後的陶瓷散熱基材30表緣成型有一氧化膜301,又或是於陶瓷散熱基材30內成型有數個大小不一的封閉孔洞302,而氧化膜301與封閉孔洞302係如前所述,兩者的成型亦導致陶瓷散熱基材30的熱傳導率降低,熱阻增加,再者,本步驟中所稱的燒結,其溫度係可為800度至900度之間;(4) Sintering molding 24: As described in the step 23 of the green body molding, after the semi-blanch system is obtained, it is quickly sintered at a low temperature to form a ceramic heat-dissipating substrate. Please refer to the "Figure 3" The figure shows a schematic diagram of the ceramic heat-dissipating substrate of the present invention (1). As shown in the figure, the semi-green body made of tantalum carbide is also subjected to high temperature or other factors during sintering. An oxide film 301 is formed on the surface of the finished ceramic heat dissipating substrate 30, or a plurality of closed holes 302 of different sizes are formed in the ceramic heat dissipating substrate 30, and the oxide film 301 and the closed hole 302 are as follows. As described above, the formation of the two also causes the thermal conductivity of the ceramic heat-dissipating substrate 30 to decrease, and the thermal resistance increases. Further, the sintering referred to in this step may have a temperature of between 800 and 900 degrees;
(5) 進行酸蝕25:承燒結成型24步驟所述,本發明係進一步將上述步驟所製得的陶瓷散熱基材30,浸泡於一酸性溶劑之中,所述的酸性溶劑可為一硝酸、一鹽酸或一硫酸等酸性溶劑,但上述幾種酸性溶劑僅為舉例,並不以此為限,又,陶瓷散熱基材30浸泡時,係會受到酸性溶劑的作用,而產生酸蝕的現象,酸蝕產生時,會蝕去陶瓷散熱基材30表面所形成的氧化膜301,並進一步蝕去陶瓷散熱基材30的部份表緣,而使成型於陶瓷散熱基材30內的封閉孔洞302受到破壞,酸蝕後的陶瓷散熱基材30係如「第4圖」所示,圖中所示係為本發明之陶瓷散熱基材製成示意圖(二),又,本步驟浸泡陶瓷散熱基材30的時間,約莫24小時為較佳,但不以此為限,而浸泡完成後,陶瓷散熱基材30係進一步進行清洗,如此一來,便製成本發明中所稱的陶瓷散熱基材30。(5) performing acid etching 25: in the step of sintering forming 24, the present invention further immerses the ceramic heat-dissipating substrate 30 obtained in the above step in an acidic solvent, and the acidic solvent may be a nitric acid An acidic solvent such as hydrochloric acid or monosulfuric acid, but the above several acidic solvents are only examples, and are not limited thereto. Moreover, when the ceramic heat-dissipating substrate 30 is immersed, it is subjected to an acidic solvent and is acid-etched. In the phenomenon, when the acid etching occurs, the oxide film 301 formed on the surface of the ceramic heat-dissipating substrate 30 is etched, and part of the surface edge of the ceramic heat-dissipating substrate 30 is further etched, so that the film is formed in the ceramic heat-dissipating substrate 30. The hole 302 is damaged, and the acid-cooled ceramic heat-dissipating substrate 30 is shown in FIG. 4, which is a schematic view of the ceramic heat-dissipating substrate of the present invention (2). The time for dissipating the substrate 30 is preferably about 24 hours, but not limited thereto. After the immersion is completed, the ceramic heat dissipating substrate 30 is further cleaned, so that the ceramic heat dissipation referred to in the present invention is prepared. Substrate 30.
如「第4圖」所示,製成後的陶瓷散熱基材30其表緣,未受到氧化膜的覆蓋,而可以產生較佳的熱傳導率,且因酸蝕作用趨使陶瓷散熱基材30的表緣受到侵蝕,並破壞了封閉孔洞,如此一來,陶瓷散熱基材30的表緣型成為凹凸不均的態樣,而使陶瓷散熱基材30與大氣進行熱交換的表面積增加,進而提升了陶瓷散熱基材30本身的散熱效果,且封閉孔洞的破壞,同時降低了陶瓷散熱基材30本身的熱阻。As shown in "Fig. 4", the surface of the fabricated ceramic heat-dissipating substrate 30 is not covered by the oxide film, and can produce a better thermal conductivity, and the ceramic heat-dissipating substrate 30 is caused by the etching action. The edge of the surface is eroded and the closed pores are destroyed. As a result, the surface of the ceramic heat-dissipating substrate 30 is uneven, and the surface area for heat exchange between the ceramic heat-dissipating substrate 30 and the atmosphere is increased. The heat dissipation effect of the ceramic heat dissipation substrate 30 itself is improved, and the destruction of the hole is closed, and the thermal resistance of the ceramic heat dissipation substrate 30 itself is lowered.
綜上所述,本發明所稱的一種陶瓷散熱基材的製造方法,所述的陶瓷散熱基材主要係由一高純度的碳化矽粉材,實施時,碳化矽粉材與一低溫結合劑呈特定比例以進行混合,經適當時間的拌攪後,製成有一碳化矽漿料,而碳化矽漿料在經造粒、塑胚等步驟,最後經由燒結製成本發明所稱的陶瓷散熱基材,此時,燒結完成的陶瓷散熱基材進一步浸泡於一酸性溶劑之中,而酸性溶劑係對陶瓷散熱基材進行酸蝕的作用,以蝕去陶瓷散熱基材於燒結過程中所型成的氧化膜或封閉孔洞,如此一來,陶瓷散熱基材表緣未受氧化膜影響,而產生熱傳導率下降的情事,封閉孔洞的破壞亦使陶瓷散熱基材的熱阻下降,且酸蝕後的陶瓷散熱基材其與大氣進行熱交換的表面積增加,進而使陶瓷散熱基材的散熱效率提升,據此,本發明其據以實施以後,確實可達到提供一種以提升陶瓷散熱基材之散熱效果的製造方法。In summary, the method for manufacturing a ceramic heat-dissipating substrate according to the present invention, the ceramic heat-dissipating substrate is mainly composed of a high-purity tantalum carbide powder, and when implemented, the tantalum carbide powder and a low-temperature binder Mixing in a specific ratio, after mixing for a suitable time, a cerium carbide slurry is prepared, and the cerium carbide slurry is subjected to granulation, plasticating, etc., and finally, the ceramic heat dissipation base referred to in the present invention is formed by sintering. At this time, the sintered ceramic heat-dissipating substrate is further immersed in an acidic solvent, and the acidic solvent acts on the ceramic heat-dissipating substrate to etch the ceramic heat-dissipating substrate during the sintering process. The oxide film or the closed hole, so that the surface of the ceramic heat-dissipating substrate is not affected by the oxide film, and the thermal conductivity is lowered, and the damage of the closed hole also causes the thermal resistance of the ceramic heat-dissipating substrate to decrease, and after the acid etching The ceramic heat-dissipating substrate has an increased surface area for heat exchange with the atmosphere, thereby improving the heat-dissipating efficiency of the ceramic heat-dissipating substrate, and accordingly, according to the present invention, it is indeed possible to provide a The method of manufacturing a heat dissipation effect to enhance the heat dissipation substrate of a ceramic.
唯,以上所述者,僅為本發明之較佳之實施例而已,並非用以限定本發明實施之範圍;任何熟習此技藝者,在不脫離本發明之精神與範圍下所作之均等變化與修飾,皆應涵蓋於本創作之專利範圍內。The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention , should be covered by the scope of this creation patent.
綜上所述,本發明之功效,係具有發明之「產業可利用性」、「新穎性」與「進步性」等專利要件;申請人爰依專利法之規定,向 鈞局提起發明專利之申請。In summary, the effects of the present invention are patents such as "industry availability," "novelty," and "progressiveness" of the invention; the applicant filed an invention patent with the bureau in accordance with the provisions of the Patent Law. Application.
10...陶瓷散熱基材10. . . Ceramic heat sink substrate
101...氧化膜101. . . Oxide film
102...封閉孔洞102. . . Closed hole
21...粉材攪拌twenty one. . . Powder mixing
22...漿料造粒twenty two. . . Slurry granulation
23...坯體塑型twenty three. . . Blank molding
24...燒結成型twenty four. . . Sintering
25...進行酸蝕25. . . Acid etching
30...陶瓷散熱基材30. . . Ceramic heat sink substrate
301...氧化膜301. . . Oxide film
302...封閉孔洞302. . . Closed hole
第1圖,係為現有陶瓷散熱基材之剖面示意圖。Figure 1 is a schematic cross-sectional view of a conventional ceramic heat sink substrate.
第2圖,係為本發明之步驟流程示意圖。Figure 2 is a schematic flow chart of the steps of the present invention.
第3圖,係為本發明之陶瓷散熱基材製成示意圖(一)。Fig. 3 is a schematic view (1) of the ceramic heat-dissipating substrate of the present invention.
第4圖,係為本發明之陶瓷散熱基材製成示意圖(二)。Figure 4 is a schematic view (2) of the ceramic heat-dissipating substrate of the present invention.
21...粉材攪拌twenty one. . . Powder mixing
22...漿料造粒twenty two. . . Slurry granulation
23...坯體塑型twenty three. . . Blank molding
24...燒結成型twenty four. . . Sintering
25...進行酸蝕25. . . Acid etching
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