TW201320364A - 矽基板、太陽能電池基板的製造方法及太陽能電池 - Google Patents
矽基板、太陽能電池基板的製造方法及太陽能電池 Download PDFInfo
- Publication number
- TW201320364A TW201320364A TW100140551A TW100140551A TW201320364A TW 201320364 A TW201320364 A TW 201320364A TW 100140551 A TW100140551 A TW 100140551A TW 100140551 A TW100140551 A TW 100140551A TW 201320364 A TW201320364 A TW 201320364A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- protruding structures
- substrate
- thickness
- solar cell
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims description 47
- 238000005530 etching Methods 0.000 claims description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 24
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- 239000002344 surface layer Substances 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100140551A TW201320364A (zh) | 2011-11-07 | 2011-11-07 | 矽基板、太陽能電池基板的製造方法及太陽能電池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100140551A TW201320364A (zh) | 2011-11-07 | 2011-11-07 | 矽基板、太陽能電池基板的製造方法及太陽能電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201320364A true TW201320364A (zh) | 2013-05-16 |
| TWI464891B TWI464891B (enExample) | 2014-12-11 |
Family
ID=48872643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100140551A TW201320364A (zh) | 2011-11-07 | 2011-11-07 | 矽基板、太陽能電池基板的製造方法及太陽能電池 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201320364A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597280A (zh) * | 2022-05-05 | 2022-06-07 | 晶科能源(海宁)有限公司 | 太阳能电池、光伏组件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163954A (ja) * | 1992-11-20 | 1994-06-10 | Sanyo Electric Co Ltd | 結晶系シリコン薄膜の形成方法及びこの膜を用いた光起電力装置 |
| US20080314443A1 (en) * | 2007-06-23 | 2008-12-25 | Christopher Michael Bonner | Back-contact solar cell for high power-over-weight applications |
-
2011
- 2011-11-07 TW TW100140551A patent/TW201320364A/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114597280A (zh) * | 2022-05-05 | 2022-06-07 | 晶科能源(海宁)有限公司 | 太阳能电池、光伏组件 |
| CN114597280B (zh) * | 2022-05-05 | 2022-07-12 | 晶科能源(海宁)有限公司 | 太阳能电池、光伏组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI464891B (enExample) | 2014-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5868503B2 (ja) | 太陽電池およびその製造方法 | |
| CN113394304A (zh) | 一种太阳能电池及其背面接触结构、电池组件及光伏系统 | |
| KR20120050484A (ko) | 태양전지 및 태양전지의 제조 방법 | |
| JP2024511224A (ja) | 選択的接触領域埋込型太陽電池及びその裏面接触構造 | |
| CN107068777A (zh) | 一种局部铝背场太阳能电池及其制备方法 | |
| TWI401810B (zh) | 太陽能電池 | |
| TW201232793A (en) | Solar cell and manufacturing method thereof | |
| CN104362209B (zh) | 一种背面抛光晶硅太阳能电池及其制备工艺 | |
| CN101404301A (zh) | 一种具有多孔硅背反射层的晶体硅太阳电池 | |
| JPH05315628A (ja) | 光電変換装置の製造方法 | |
| JP2011228529A (ja) | 太陽電池セル及びその製造方法 | |
| TWI548101B (zh) | 太陽電池及太陽電池之製造方法 | |
| CN103137721B (zh) | 硅基板、太阳能电池基板的制造方法及太阳能电池 | |
| TW201312769A (zh) | 低反射基板之製造方法,及光電動勢裝置之製造方法 | |
| TW201320364A (zh) | 矽基板、太陽能電池基板的製造方法及太陽能電池 | |
| CN101312219A (zh) | 太阳能电池 | |
| KR20100124660A (ko) | 태양전지 및 그의 제조방법 | |
| TW200818526A (en) | Method for forming a solar cell | |
| KR101101374B1 (ko) | 반사율을 저감시키는 표면 구조를 가지는 태양 전지 및 그 제조 방법 | |
| CN115117202A (zh) | 一种太阳能电池的制备方法和太阳能电池 | |
| KR101510709B1 (ko) | 습식에칭법을 이용한 실리콘 웨이퍼 복합구조 및 이의 제조방법 | |
| CN120239367B (zh) | 太阳能电池片及其制备方法和光伏组件 | |
| JP2005159168A (ja) | 光電変換装置およびその製造方法 | |
| JP5412376B2 (ja) | 太陽電池 | |
| JP2005079143A (ja) | 結晶シリコンおよびこれを用いた光電変換装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |