TW201320114A - Thermistor - Google Patents

Thermistor Download PDF

Info

Publication number
TW201320114A
TW201320114A TW100140471A TW100140471A TW201320114A TW 201320114 A TW201320114 A TW 201320114A TW 100140471 A TW100140471 A TW 100140471A TW 100140471 A TW100140471 A TW 100140471A TW 201320114 A TW201320114 A TW 201320114A
Authority
TW
Taiwan
Prior art keywords
electrode
layer
thermistor element
conductive member
insulating layer
Prior art date
Application number
TW100140471A
Other languages
Chinese (zh)
Other versions
TWI428939B (en
Inventor
Yi-An Sha
Chun-Teng Tseng
David Shau-Chew Wang
Original Assignee
Polytronics Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polytronics Technology Corp filed Critical Polytronics Technology Corp
Priority to TW100140471A priority Critical patent/TWI428939B/en
Publication of TW201320114A publication Critical patent/TW201320114A/en
Application granted granted Critical
Publication of TWI428939B publication Critical patent/TWI428939B/en

Links

Landscapes

  • Thermistors And Varistors (AREA)

Abstract

A thermistor includes a laminar resistive device, a first insulation layer, a first electrode, a second electrode and a first heat-conductive layer. The resistive device includes a first electrically conductive member, a second electrically conductive member and a polymer layer disposed therebetween. The polymer layer exhibits positive temperature coefficient (PTC) or negative temperature coefficient (NTC) behavior. The first insulation layer is disposed on the first electrically conductive member. The first electrode is electrically coupled to the first electrically conductive member, whereas the second electrode is electrically coupled to the second electrically conductive member and is insulated from the first electrode. The first heat-conductive layer is disposed on the first insulation layer, and has a heat conductivity of at least 30W/m-K and a thickness of 15-250 μ m.

Description

熱敏電阻元件Thermistor element

本發明係關於以導電高分子材料製成的表面黏著型(SMD)可變熱敏電阻元件,如正溫度係數(PTC)元件、負溫度係數(NTC)元件,其可應用於印刷電路板(PCB)上,做過電流保護及異常溫度環境之感測。The present invention relates to a surface mount type (SMD) variable thermistor element made of a conductive polymer material, such as a positive temperature coefficient (PTC) element and a negative temperature coefficient (NTC) element, which can be applied to a printed circuit board ( On the PCB), it has been tested for current protection and abnormal temperature environment.

由於具有正溫度係數(Positive Temperature Coefficient;PTC)特性之導電複合材料之電阻對溫度變化具有反應敏銳的特性,可作為電流感測元件之材料,目前已被廣泛應用於過電流保護元件或電路元件上。由於PTC導電複合材料在正常溫度下之電阻可維持極低值,使電路或電池得以正常運作。但是,當電路或電池發生過電流(over-current)或過高溫(over-temperature)的現象時,其電阻值會瞬間提高至一高電阻狀態(至少102Ω以上),而將過量之電流降低,以達到保護電池或電路元件之目的。Since the resistance of the conductive composite material having positive temperature coefficient (PTC) characteristics is sensitive to temperature changes, it can be used as a material of current sensing elements, and has been widely used as an overcurrent protection element or circuit element. on. Since the resistance of the PTC conductive composite at normal temperatures can be maintained at a very low value, the circuit or battery can operate normally. However, when an over-current or over-temperature phenomenon occurs in a circuit or battery, the resistance value is instantaneously increased to a high resistance state (at least 10 2 Ω or more), and excess current is generated. Reduced for the purpose of protecting the battery or circuit components.

在高密度線路設計及製造中,對保護元件在尺寸的要求上,需達到輕、薄、微小的要求,而且在安裝上需達到表面黏著型元件的設計。因此,以有機高分子材料製作的PTC元件,已被設計成不同型式之表面黏著型電子元件。然而,受到元件尺寸的限制,以及熱傳不良等因素,導致產品之維持電流(hold current)無法提升。另外,由於元件之絕熱性過高,亦可能造成對環境溫度的敏感性過低的問題。In the design and manufacture of high-density circuits, the requirements for the size of the protective components must be light, thin and small, and the surface-adhesive components must be designed for installation. Therefore, PTC elements made of organic polymer materials have been designed into different types of surface-adhesive electronic components. However, due to factors such as component size limitations and poor heat transfer, the hold current of the product cannot be improved. In addition, due to the high thermal insulation of the components, the sensitivity to ambient temperature may be too low.

為了克服以上所設計之缺失,本發明之特點在於熱敏電阻元件表面增加導熱層,以期快速導熱。藉此提升元件之維持電流與增加對於環境之溫度感應。In order to overcome the above design flaws, the invention is characterized in that the surface of the thermistor element is increased in thermal conductivity for rapid thermal conduction. This increases the holding current of the component and increases the temperature sensing for the environment.

根據本發明之一實施例,熱敏電阻元件包括薄板型電阻元件、第一絕緣層、第一電極、第二電極、第一導熱層。該薄板型電阻元件包含第一導電構件、第二導電構件及高分子材料層,其中該高分子材料層係疊設於第一導電構件及第二導電構件之間,且具有正溫度或負溫度係數之行為。第一絕緣層設置於該第一導電構件上,且該第一絕緣層的表面延伸構成第一平面。第一電極電氣連接該第一導電構件。第二電極電氣連接該第二導電構件,且與第一電極電氣隔離。第一導熱層設置於該第一絕緣層表面,其導熱率至少為30W/m-K,且第一導熱層的厚度為15~250μm。一實施例中,部分之第一電極和第二電極形成於第一平面上,且和第一導熱層形成熱敏電阻元件之第一表面,且第一表面中該第一電極、第二電極和第一導熱層之面積總和為第一表面的面積之40~90%。According to an embodiment of the invention, the thermistor element comprises a thin plate type resistive element, a first insulating layer, a first electrode, a second electrode, and a first heat conducting layer. The thin plate type resistive element comprises a first conductive member, a second conductive member and a polymer material layer, wherein the polymer material layer is stacked between the first conductive member and the second conductive member and has a positive temperature or a negative temperature The behavior of the coefficient. The first insulating layer is disposed on the first conductive member, and a surface of the first insulating layer extends to form a first plane. The first electrode electrically connects the first conductive member. The second electrode electrically connects the second conductive member and is electrically isolated from the first electrode. The first heat conducting layer is disposed on the surface of the first insulating layer, and has a thermal conductivity of at least 30 W/m-K, and the first heat conducting layer has a thickness of 15 to 250 μm. In one embodiment, a portion of the first electrode and the second electrode are formed on the first plane, and the first heat conductive layer forms a first surface of the thermistor element, and the first electrode and the second electrode in the first surface The sum of the areas of the first heat conducting layer is 40 to 90% of the area of the first surface.

一實施例中,熱敏電阻元件另包含第二絕緣層及第二導熱層,該第二絕緣層設置於該第二導電構件上,且該第二絕緣層的表面延伸構成第二平面。第二導熱層設置於該第二絕緣層表面,其中部分之第一電極、第二電極形成於該第二平面上,且和第二導熱層形成熱敏電阻元件之第二表面,且該第二表面中第一電極、第二電極和第二導熱層之面積總和為第二表面的面積之40~90%。In one embodiment, the thermistor element further comprises a second insulating layer and a second heat conducting layer, the second insulating layer is disposed on the second conductive member, and a surface of the second insulating layer extends to form a second plane. a second heat conducting layer is disposed on the surface of the second insulating layer, wherein a portion of the first electrode and the second electrode are formed on the second surface, and the second heat conducting layer forms a second surface of the thermistor element, and the first surface The sum of the areas of the first electrode, the second electrode and the second heat conducting layer in the two surfaces is 40 to 90% of the area of the second surface.

一實施例中,可利用導熱連接件連接前述第一導電構件及第一導熱層,或第二導電構件及第二導熱層。In one embodiment, the first conductive member and the first heat conductive layer, or the second conductive member and the second heat conductive layer may be connected by a heat conductive connection.

本發明藉由改善傳統之SMD產品外觀,增加元件之導熱面積或是導熱/導電路徑,亦可搭配具備熱傳效應之焊墊,以藉此大幅提升元件之熱傳效率,進而提升產品之維持電流。另外,本發明亦可增加對於環境溫度之敏感性,以提供電池元件保護與各式電子產品應用。The invention improves the heat transfer area of the component or the heat conduction/conductivity path by improving the appearance of the conventional SMD product, and can also be matched with the solder pad having the heat transfer effect, thereby greatly improving the heat transfer efficiency of the component, thereby improving the maintenance of the product. Current. In addition, the present invention can also increase sensitivity to ambient temperatures to provide battery component protection and a variety of electronic product applications.

為讓本發明之上述和其他技術內容、特徵、和優點能更明顯易懂,下文特舉出相關實施例,並配合所附圖式,作詳細說明如下:圖1A繪示本發明第一實施例之熱敏電阻示意圖。圖1B繪示圖1所示熱敏電阻元件之俯視圖。熱敏電阻10包括薄板型電阻元件11、第一絕緣層15、第二絕緣層16、第一電極17及第二電極18。薄板型電阻元件11包含第一導電構件12、第二導電構件13及高分子材料層14,其中該高分子材料層14係疊設於第一導電構件12及第二導電構件13之間,其中含有導電粒子,且具有正溫度或負溫度係數之行為。適用於本發明之高分子材料包括:聚乙烯、聚丙烯、聚氟烯、前述之混合物及共聚合物等。導電粒子可為金屬粒子、含碳粒子、金屬氧化物、金屬碳化物,或是前述材料之混合物。第一絕緣層15設置於第一導電構件12上,第二絕緣層16設置於第二導電構件13上。絕緣層15、16可包含聚丙烯、玻璃纖維或散熱材料。其中散熱材料係包含熱固型塑膠及纖維之高分子材料、具熱塑型塑膠與熱固型塑膠交互穿透結構之高分子材料,其係揭露於中華民國專利公開號200816235、公告號1339088以及公開號201101342,在此引入本文中。其中該高分子散熱材料之導熱率至少為0.5W/m-K,且1W/m-K、2W/m-K、3W/m-K、4W/m-K或5W/m-K以上為本發明之優選實施例。The above and other technical contents, features, and advantages of the present invention will become more apparent from the following detailed description. A schematic diagram of the thermistor. FIG. 1B is a top view of the thermistor element of FIG. 1. FIG. The thermistor 10 includes a thin plate type resistive element 11, a first insulating layer 15, a second insulating layer 16, a first electrode 17, and a second electrode 18. The thin-plate type resistive element 11 includes a first conductive member 12, a second conductive member 13 and a polymer material layer 14, wherein the polymer material layer 14 is stacked between the first conductive member 12 and the second conductive member 13, wherein Contains conductive particles and has a positive or negative temperature coefficient behavior. Polymer materials suitable for use in the present invention include polyethylene, polypropylene, polyfluoroolefin, mixtures of the foregoing, and copolymers. The conductive particles may be metal particles, carbonaceous particles, metal oxides, metal carbides, or a mixture of the foregoing. The first insulating layer 15 is disposed on the first conductive member 12, and the second insulating layer 16 is disposed on the second conductive member 13. The insulating layers 15, 16 may comprise polypropylene, fiberglass or a heat dissipating material. The heat dissipating material is a polymer material comprising a thermosetting plastic and a fiber, and a polymer material having a thermoplastic plastic and a thermosetting plastic cross-penetrating structure, which is disclosed in the Republic of China Patent Publication No. 200816235, Announcement No. 1339088 and Publication No. 201101342, which is incorporated herein by reference. Wherein the polymer heat dissipating material has a thermal conductivity of at least 0.5 W/m-K, and 1 W/m-K, 2 W/m-K, 3 W/m-K, 4 W/m-K or 5 W/m-K or more is a preferred embodiment of the invention.

第一電極17包含一部分設置於該第一絕緣層15上,亦即形成於第一絕緣層15表面之延伸之第一平面31上。第一電極17包含另一部分設置於該第二絕緣層16上,亦即形成於第二絕緣層16表面之延伸之第二平面32上。該第一電極17透過第一導電連接件19電氣連接該第一導電構件12。類似地,第二電極18包含一部分設置於該第一絕緣層15或第一平面31上,以及包含另一部分設置於該第二絕緣層16或第二平面32上。該第二電極18透過第二導電連接件20電氣連接該第二導電構件13,且與第一電極17電氣隔離。本實施例中,相較於傳統之電極設置,設置於第一絕緣層15表面之第一電極17部分係向第二電極18方向延伸,作為第一導熱層21。類似地,設置於第二絕緣層16表面之第二電極18部分係向第一電極17方向延伸,形成第二導熱層22。易言之,第一電極17可視為包含第一導熱層21,該第一導熱層21係第一電極17之延伸部分。第二電極18可視為包含第二導熱層22,該第二導熱層22係第二電極18之延伸部分。The first electrode 17 is partially disposed on the first insulating layer 15, that is, formed on the first plane 31 of the surface of the first insulating layer 15. The first electrode 17 includes another portion disposed on the second insulating layer 16, that is, formed on the second plane 32 of the surface of the second insulating layer 16. The first electrode 17 is electrically connected to the first conductive member 12 through the first conductive connection member 19. Similarly, the second electrode 18 includes a portion disposed on the first insulating layer 15 or the first plane 31, and a further portion disposed on the second insulating layer 16 or the second plane 32. The second electrode 18 is electrically connected to the second conductive member 13 through the second conductive connecting member 20 and is electrically isolated from the first electrode 17. In this embodiment, the portion of the first electrode 17 disposed on the surface of the first insulating layer 15 extends toward the second electrode 18 as the first heat conducting layer 21 as compared with the conventional electrode arrangement. Similarly, the portion of the second electrode 18 disposed on the surface of the second insulating layer 16 extends toward the first electrode 17 to form the second heat conducting layer 22. In other words, the first electrode 17 can be considered to include the first heat conductive layer 21, which is an extension of the first electrode 17. The second electrode 18 can be considered to include a second thermally conductive layer 22 that is an extension of the second electrode 18.

第一導熱層21和第二導熱層28可採用金屬鎳、銅、鋁、鉛、錫、銀、金或其合金等導熱率大於30W/m-K之材料,尤以導熱率大於200W/m-K之鋁(約238W/m-K)及大於300W/m-K之銅(約397W/m-K)、銀、金等具有更佳的熱傳導效率,而為本發明之較佳選擇。The first heat conducting layer 21 and the second heat conducting layer 28 may be made of materials such as nickel, copper, aluminum, lead, tin, silver, gold or alloys thereof having a thermal conductivity greater than 30 W/mK, especially aluminum having a thermal conductivity greater than 200 W/mK. (about 238 W/mK) and more than 300 W/mK of copper (about 397 W/mK), silver, gold, etc. have better heat transfer efficiency, and are a preferred choice for the present invention.

申言之,電阻元件11上下表面,分別設置有第一導電構件12與第二導電構件13,且各自延伸至薄板型電阻元件11之相對兩端面。此導電構件12、13可由一平面金屬簿膜,經一般蝕刻方式(如Laser Trimming,化學蝕刻或機械方式)產生上下面,一左一右各一,不對稱之缺口(剝離金屬膜產生之缺口)。上述導電構件之材料可為鎳、銅、鋅、銀、金、及前述金屬所組成之合金或多層材料。此外,所述缺口可為長方型、半圓形、三角形或不規則之形狀及圖案,唯此缺口面積以不超過單面總面積之25%較佳。In other words, the upper and lower surfaces of the resistive element 11 are respectively provided with the first conductive member 12 and the second conductive member 13 and each extend to opposite end faces of the thin plate type resistive element 11. The conductive members 12, 13 can be formed from a flat metal film by a general etching method (such as Laser Trimming, chemical etching or mechanical means) to form an upper and lower surface, one left and one right, and an asymmetric notch (the gap generated by the peeling metal film) ). The material of the conductive member may be nickel, copper, zinc, silver, gold, and an alloy or a plurality of layers of the foregoing metals. In addition, the notch may be a rectangular shape, a semicircular shape, a triangular shape or an irregular shape and pattern, and the notch area is preferably not more than 25% of the total area of one side.

上述缺口經剝離金屬膜成型後,可使用各式優良的接著性膠膜(即絕緣層15、16,如環氧樹脂與玻璃纖維布製成之膠膜),將此電阻元件11與外層上下各一片之金屬銅膜經熱壓固化密合。之後,可將上下外層之銅膜經蝕刻方法,產生電極,如圖中17、18所示。After the notch is formed by the peeling metal film, various excellent adhesive films (ie, insulating layers 15, 16 such as a film made of epoxy resin and glass fiber cloth) can be used, and the resistive element 11 and the outer layer are respectively A piece of metal copper film is cured by heat pressing. Thereafter, the copper film of the upper and lower outer layers can be etched to produce electrodes, as shown in FIGS.

左右兩端電極17、18,可藉由導電連接件19、20或全面性裁切面之電鍍方式,將上下左右各區之電極選擇性垂直導通相連。第一導熱層21與第一和第二電極17、18間、或第二導熱層22與第一和第二電極17、18間可利用蝕刻出間隔而形成電氣隔離。其中該間隔至少為15μm、20 μm或30 μm。The left and right end electrodes 17, 18 can be selectively and vertically connected to the electrodes of the upper, lower, left and right regions by means of the conductive connecting members 19, 20 or the comprehensive cutting surface. The first thermally conductive layer 21 and the first and second electrodes 17, 18, or between the second thermally conductive layer 22 and the first and second electrodes 17, 18 may be electrically isolated by etching. Wherein the interval is at least 15 μm, 20 μm or 30 μm.

一實施例中,第一電極17和第二導熱層22間、第二電極18和第一導熱層21間係以絕緣之防焊層25作為隔離。雖然在本實施例中作為隔離之防焊層25為長方型,其他形狀之隔離如半圓形、弧形、三角形或不規則形狀及圖案亦可適用於本發明。In one embodiment, the insulating layer 25 is insulated between the first electrode 17 and the second heat conducting layer 22, and between the second electrode 18 and the first heat conducting layer 21. Although the isolated solder resist layer 25 is rectangular in the present embodiment, other shapes such as semicircular, curved, triangular or irregular shapes and patterns may be suitable for use in the present invention.

本實施例中之導電連接件19、20係以半圓形導通孔為例作一說明。在導通孔之孔壁上可利用無電電鍍或電鍍方法鍍上一層導電金屬(如銅或金),以達到連接上下電極的目的。除半圓形外,導通孔的截面形狀可為圓形、1/4圓形、弧形、方形、菱形、長方形、三角形、或多邊形等。The conductive connecting members 19 and 20 in this embodiment are described by taking a semicircular through hole as an example. A layer of conductive metal (such as copper or gold) may be plated on the wall of the via hole by electroless plating or electroplating to achieve the purpose of connecting the upper and lower electrodes. In addition to the semicircular shape, the cross-sectional shape of the via hole may be a circle, a quarter circle, an arc, a square, a diamond, a rectangle, a triangle, or a polygon.

形成於該第一絕緣層15上(亦即第一平面31)之第一電極17、第二電極18和第一導熱層21形成熱敏電阻元件10之第一表面24;形成於第二絕緣層16上(亦即第二平面32)之第一電極17、第二電極18和第二導熱層22形成熱敏電阻元件10之第二表面26。The first electrode 17, the second electrode 18 and the first heat conducting layer 21 formed on the first insulating layer 15 (ie, the first plane 31) form a first surface 24 of the thermistor element 10; formed in the second insulating layer The first electrode 17, the second electrode 18 and the second thermally conductive layer 22 on the layer 16 (i.e., the second plane 32) form a second surface 26 of the thermistor element 10.

第一表面24中該第一電極17、第二電極18和第一導熱層21之面積總和佔整體第一表面24面積之百分比可為約40~90%,特別是45~85%,較佳為50~80%。實際應用上,前述百分比可為40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%、95%。類似地,第二表面26中該第一電極17、第二電極18和第二導熱層22之面積總和佔整體第二表面26面積之百分比可為約40~90%,特別是45~85%,較佳為50~80%。實際應用上,該比例可為40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%、95%。The total area of the first electrode 17, the second electrode 18 and the first heat conducting layer 21 in the first surface 24 may be about 40-90%, especially 45-85%, preferably in the total area of the first surface 24. It is 50~80%. In practical applications, the aforementioned percentages may be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%. Similarly, the total area of the first electrode 17, the second electrode 18, and the second heat conducting layer 22 in the second surface 26 may be about 40-90%, especially 45-85%, of the total area of the second surface 26. Preferably, it is 50 to 80%. In practical applications, the ratio may be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%.

圖2A繪示本發明第二實施例之熱敏電阻元件示意圖。圖2B繪示圖2A所示熱敏電阻元件之俯視圖。類似於圖1A及1B所示之熱敏電阻元件10,熱敏電阻元件20亦包括薄板型電阻元件11、絕緣層15和16、第一電極17、第二電極18等。與圖1A和1B所示不同處在於第一導熱層21並非第一電極17之延伸,而係單獨設於第一絕緣層15上。第二導熱層22並非第二電極18之延伸,而係單獨設於第二絕緣層16上。一實施例中,第一導熱層21與第一和第二電極17、18間係利用蝕刻形成間隔或以防焊層25進行隔離。第二導熱層22與第一和第二電極17、18間亦可利用蝕刻形成間隔或以防焊層25進行隔離。第一電極17、第二電極18和第一導熱層21之面積總和佔整體第一表面24面積之比例和第一電極17、第二電極18和第二導熱層22之面積總和佔整體第二表面26面積之比例同樣可參考第一實施例所述。2A is a schematic view of a thermistor element according to a second embodiment of the present invention. 2B is a top plan view of the thermistor element of FIG. 2A. Similar to the thermistor element 10 shown in FIGS. 1A and 1B, the thermistor element 20 also includes a thin plate type resistive element 11, insulating layers 15 and 16, a first electrode 17, a second electrode 18, and the like. The difference from that shown in FIGS. 1A and 1B is that the first heat conductive layer 21 is not an extension of the first electrode 17, but is provided separately on the first insulating layer 15. The second heat conduction layer 22 is not an extension of the second electrode 18 but is separately provided on the second insulation layer 16. In one embodiment, the first thermally conductive layer 21 is separated from the first and second electrodes 17, 18 by etching or by a solder resist layer 25. The second heat conductive layer 22 and the first and second electrodes 17, 18 may also be separated by etching or may be isolated by the solder resist layer 25. The ratio of the total area of the first electrode 17, the second electrode 18 and the first heat conducting layer 21 to the area of the entire first surface 24 and the sum of the areas of the first electrode 17, the second electrode 18 and the second heat conducting layer 22 occupy the second overall The ratio of the area of the surface 26 can also be referred to in the first embodiment.

圖3繪示本發明第三實施例之熱敏電阻元件示意圖。熱敏電阻元件30相較於圖2A所示之熱敏電阻元件20係另外於第一導熱層21與第一導電構件12間設置導熱連接件27,以增加電阻元件11之熱傳導效率。同樣地,於第二導熱層22與第二導電構件13間可設置導熱連接件28。導熱連接件27、28可採用與導熱層21、22相同之金屬鎳、銅、鋁、鉛、錫、銀、金或其合金等導熱率大於30W/m-K之材料,尤以導熱率大於200W/m-K之鋁及大於300W/m-K之銅、銀、金或其合金具有最佳的熱傳導效率,而為本發明之較佳選擇。3 is a schematic view of a thermistor element according to a third embodiment of the present invention. The thermistor element 30 is provided with a thermally conductive connecting member 27 between the first heat conducting layer 21 and the first conductive member 12 in comparison with the thermistor element 20 shown in FIG. 2A to increase the heat transfer efficiency of the resistive element 11. Similarly, a heat conducting connector 28 may be disposed between the second heat conducting layer 22 and the second conductive member 13. The heat conducting connecting members 27 and 28 can adopt the same material as the heat conducting layers 21 and 22, such as nickel, copper, aluminum, lead, tin, silver, gold or alloy thereof, and the thermal conductivity is greater than 30 W/mK, especially the thermal conductivity is greater than 200 W/ Aluminum of mK and copper, silver, gold or alloys of more than 300 W/mK have the best heat transfer efficiency, and are a preferred choice for the present invention.

以上之設計及製作方式,可增加其中電阻元件層數至二層以上(即包含兩個以上之電阻元件11)進行並聯聯結,達到多層並聯式之表面黏著用電阻元件。此外,連接第一導熱層21與第一導電構件12之導熱連接件27,或連接第二導熱層22與第二導電構件13之導熱連接件28的數目可為多個,以增加導熱效率。The above design and manufacturing method can increase the number of layers of the resistive element to two or more layers (that is, include two or more resistive elements 11) to be connected in parallel to achieve a multilayer parallel type surface resistive resistive element. In addition, the number of the thermally conductive connectors 27 connecting the first heat conducting layer 21 and the first conductive member 12, or the heat conducting connectors 28 connecting the second heat conducting layer 22 and the second conductive member 13 may be plural to increase heat conduction efficiency.

圖4繪示本發明第四實施例之熱敏電阻元件示意圖。熱敏電阻40包括薄板型電阻元件41、絕緣層55、第一電極47及第二電極48。薄板型電阻元件41包含第一導電構件42、第二導電構件43及高分子材料層44,其中該高分子材料層44係疊設於第一導電構件42及第二導電構件43之間,其中含有導電粒子,且具有正溫度或負溫度係數之行為。絕緣層55設置於第一導電構件42上。第一電極47透過導電層46電氣連接至該第一導電構件42。第一電極47係形成於絕緣層55表面之延伸平面61上。第二電極48設置於該絕緣層55上(亦即平面61),並透過導電連接件49電氣連接該第二導電構件43,且與第一電極47電氣隔離。導熱層53設置於絕緣層55表面。一實施例中,導熱層53較佳地透過導熱連接件57連接於第一導電構件42。其中形成於平面61上之第一電極47、第二電極48和導熱層53形成熱敏電阻元件40之表面51,且該第一電極47、第二電極48和導熱層53之面積總和為表面51的面積之40~90%,特別是45~85%,較佳為50~80%。實際應用上,該比例可為40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%、95%。4 is a schematic view of a thermistor element according to a fourth embodiment of the present invention. The thermistor 40 includes a thin plate type resistive element 41, an insulating layer 55, a first electrode 47, and a second electrode 48. The thin plate type resistive element 41 includes a first conductive member 42 , a second conductive member 43 , and a polymer material layer 44 , wherein the polymer material layer 44 is stacked between the first conductive member 42 and the second conductive member 43 , wherein Contains conductive particles and has a positive or negative temperature coefficient behavior. The insulating layer 55 is disposed on the first conductive member 42. The first electrode 47 is electrically connected to the first conductive member 42 through the conductive layer 46. The first electrode 47 is formed on the extending plane 61 of the surface of the insulating layer 55. The second electrode 48 is disposed on the insulating layer 55 (ie, the plane 61), and is electrically connected to the second conductive member 43 through the conductive connection member 49, and is electrically isolated from the first electrode 47. The heat conductive layer 53 is provided on the surface of the insulating layer 55. In one embodiment, the thermally conductive layer 53 is preferably coupled to the first electrically conductive member 42 through a thermally conductive connector 57. The first electrode 47, the second electrode 48 and the heat conducting layer 53 formed on the plane 61 form the surface 51 of the thermistor element 40, and the sum of the areas of the first electrode 47, the second electrode 48 and the heat conducting layer 53 is the surface. The area of 51 is 40 to 90%, especially 45 to 85%, preferably 50 to 80%. In practical applications, the ratio may be 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%.

關於其他表面黏著型之熱敏電阻元件之其他結構型態亦揭露於中華民國專利公告號415624及公告號I282696。上開各專利之相關結構型態揭露在此引入本文中。以上各種結構之熱敏電阻元件均可應用本發明增設導熱層或進一步增設導熱連接件,而增加散熱效果。另外,前述導熱層之厚度係介於15~250μm之間,且亦可為18μm、35μm、70μm、140μm或210μm,其中較厚之導熱層係具有較佳之導熱效果。Other structural types of other surface-adhesive thermistor elements are also disclosed in the Republic of China Patent Publication No. 415624 and the publication number I282696. The related structural forms of the above patents are hereby incorporated by reference. The thermistor elements of the above various structures can be applied with the addition of the heat conducting layer of the present invention or further adding a heat conducting connecting member to increase the heat dissipation effect. In addition, the thickness of the heat conductive layer is between 15 and 250 μm, and may also be 18 μm, 35 μm, 70 μm, 140 μm or 210 μm, wherein the thick thermal layer has a better thermal conductivity.

本發明相較於原有SMD元件架構,增加作為導熱層之例如銅箔電路之尺寸與/或增加作為導熱連接件之例如銅柱架構,使SMD元件於通電時,能將多餘的熱源傳導到電路,或所使用之電路基板上。在有效抑制溫昇的情形下,可大幅提昇熱敏電阻元件的維持電流,並滿足大電流需求,同時藉由電路設計,亦可提昇熱量的傳遞,能有效提升元件對於外界溫度的敏感性。Compared with the original SMD component architecture, the present invention increases the size of, for example, a copper foil circuit as a heat conducting layer and/or increases the thickness of the heat conducting connector, for example, to form a copper pillar structure, so that when the SMD component is energized, the excess heat source can be conducted to The circuit, or the circuit substrate used. In the case of effectively suppressing the temperature rise, the holding current of the thermistor element can be greatly improved, and the large current demand can be satisfied, and the heat transfer can be improved by the circuit design, and the sensitivity of the element to the external temperature can be effectively improved.

本發明之技術內容及技術特點已揭示如上,然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明之保護範圍應不限於實施例所揭示者,而應包括各種不背離本發明之替換及修飾,並為以下之申請專利範圍所涵蓋。The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims

10、20、30、40...熱敏電阻元件10, 20, 30, 40. . . Thermistor element

11...電阻元件11. . . Resistance element

12...第一導電構件12. . . First conductive member

13...第二導電構件13. . . Second conductive member

14...高分子材料層14. . . Polymer layer

15...第一絕緣層15. . . First insulating layer

16...第二絕緣層16. . . Second insulating layer

17...第一電極17. . . First electrode

18...第二電極18. . . Second electrode

19...第一導電連接件19. . . First conductive connector

20...第二導電連接件20. . . Second conductive connector

21...第一導熱層twenty one. . . First heat conducting layer

22...第二導熱層twenty two. . . Second heat conducting layer

24...第一表面twenty four. . . First surface

25...防焊層25. . . Solder mask

26...第二表面26. . . Second surface

27...第一導熱連接件27. . . First thermal connection

28...第二導熱連接件28. . . Second thermal connection

31...第一平面31. . . First plane

32...第二平面32. . . Second plane

41...電阻元件41. . . Resistance element

42...第一導電構件42. . . First conductive member

43...第二導電構件43. . . Second conductive member

44...高分子材料層44. . . Polymer layer

45...防焊層45. . . Solder mask

46...導電層46. . . Conductive layer

47...第一電極47. . . First electrode

48...第二電極48. . . Second electrode

49...導電連接件49. . . Conductive connector

51...表面51. . . surface

53...導熱層53. . . Thermal layer

57...導熱連接件57. . . Thermal connection

61...平面61. . . flat

圖1A及圖1B係本發明第一實施例之熱敏電阻元件之示意圖;1A and 1B are schematic views of a thermistor element according to a first embodiment of the present invention;

圖2A及圖2B係本發明第二實施例之熱敏電阻元件之示意圖;2A and 2B are schematic views of a thermistor element according to a second embodiment of the present invention;

圖3係本發明第三實施例之熱敏電阻元件之示意圖;Figure 3 is a schematic view showing a thermistor element of a third embodiment of the present invention;

圖4係本發明第四實施例之熱敏電阻元件之示意圖。Fig. 4 is a schematic view showing a thermistor element of a fourth embodiment of the present invention.

10...熱敏電阻元件10. . . Thermistor element

11...電阻元件11. . . Resistance element

12...第一導電構件12. . . First conductive member

13...第二導電構件13. . . Second conductive member

14...高分子材料層14. . . Polymer layer

15...第一絕緣層15. . . First insulating layer

16...第二絕緣層16. . . Second insulating layer

17...第一電極17. . . First electrode

18...第二電極18. . . Second electrode

19...第一導電連接件19. . . First conductive connector

20...第二導電連接件20. . . Second conductive connector

21...第一導熱層twenty one. . . First heat conducting layer

22...第二導熱層twenty two. . . Second heat conducting layer

24...第一表面twenty four. . . First surface

25...防焊層25. . . Solder mask

26...第二表面26. . . Second surface

31...第一平面31. . . First plane

32...第二平面32. . . Second plane

Claims (18)

一種熱敏電阻元件,包括:一薄板型電阻元件,包含第一導電構件、第二導電構件及高分子材料層,其中該高分子材料層係疊設於第一導電構件及第二導電構件之間,且具有正溫度或負溫度係數之行為;一第一絕緣層,設置於該第一導電構件上;一第一電極,電氣連接該第一導電構件;一第二電極,電氣連接該第二導電構件,且與第一電極電氣隔離;以及一第一導熱層,設置於該第一絕緣層表面,其導熱率至少為50W/m-K,且其厚度介於15~250μm。A thermistor element comprises: a thin plate type resistive element comprising a first conductive member, a second conductive member and a polymer material layer, wherein the polymer material layer is stacked on the first conductive member and the second conductive member And having a positive temperature or a negative temperature coefficient; a first insulating layer disposed on the first conductive member; a first electrode electrically connecting the first conductive member; and a second electrode electrically connecting the first portion And a first conductive layer disposed on the surface of the first insulating layer, having a thermal conductivity of at least 50 W/mK and a thickness of 15 to 250 μm. 根據請求項1之熱敏電阻元件,其中該第一絕緣層的表面延伸構成第一平面,部分之第一電極、第二電極形成於該第一平面上,且和第一導熱層形成熱敏電阻元件之第一表面,且該第一表面中第一電極、第二電極和第一導熱層之面積總和為第一表面的面積之40~90%。The thermistor element of claim 1, wherein a surface of the first insulating layer extends to form a first plane, and a portion of the first electrode and the second electrode are formed on the first plane and form a heat sensitive with the first heat conducting layer a first surface of the resistive element, and the sum of the areas of the first electrode, the second electrode and the first heat conducting layer in the first surface is 40 to 90% of the area of the first surface. 根據請求項1之熱敏電阻元件,其另包含一第二絕緣層及一第二導熱層,該第二絕緣層設置於該第二導電構件上,且第二導熱層設置於該第二絕緣層表面。The thermistor element of claim 1, further comprising a second insulating layer and a second heat conducting layer, wherein the second insulating layer is disposed on the second conductive member, and the second heat conducting layer is disposed on the second insulating layer Layer surface. 根據請求項3之熱敏電阻元件,其中該第二絕緣層的表面延伸構成第二平面,部分之第一電極、第二電極形成於該第二平面上,且和第二導熱層形成熱敏電阻元件之第二表面,且該第二表面中第一電極、第二電極和第二導熱層之面積總和為第二表面的面積之40~90%。The thermistor element of claim 3, wherein the surface of the second insulating layer extends to form a second plane, and a portion of the first electrode and the second electrode are formed on the second plane, and form a thermal contact with the second heat conducting layer a second surface of the resistive element, and the sum of the areas of the first electrode, the second electrode and the second heat conducting layer in the second surface is 40 to 90% of the area of the second surface. 根據請求項3之熱敏電阻元件,其中該第一電極及第二電極形成於該第一絕緣層及第二絕緣層表面。The thermistor element of claim 3, wherein the first electrode and the second electrode are formed on surfaces of the first insulating layer and the second insulating layer. 根據請求項1之熱敏電阻元件,其中該第一導熱層係第一電極之延伸部分。The thermistor element of claim 1, wherein the first thermally conductive layer is an extended portion of the first electrode. 根據請求項2之熱敏電阻元件,其中該第一導熱層設置於該第一平面上之第一電極及第二電極之間。The thermistor element of claim 2, wherein the first heat conducting layer is disposed between the first electrode and the second electrode on the first plane. 根據請求項1之熱敏電阻元件,其中該第一導熱層與第一和第二電極間係電氣隔離。The thermistor element of claim 1, wherein the first thermally conductive layer is electrically isolated from the first and second electrodes. 根據請求項8之熱敏電阻元件,其中該第一導熱層與第一或第二電極間之間隔至少為15μm。The thermistor element of claim 8, wherein the first thermally conductive layer is spaced apart from the first or second electrode by at least 15 μm. 根據請求項1之熱敏電阻元件,其中該第一導熱層與第一和第二電極間係以防焊層進行隔離。The thermistor element of claim 1, wherein the first heat conducting layer is isolated from the first and second electrodes by a solder resist layer. 根據請求項1之熱敏電阻元件,其中該第一導熱層包含鎳、銅、鋁、鉛、錫、銀、金或其合金。The thermistor element of claim 1, wherein the first thermally conductive layer comprises nickel, copper, aluminum, lead, tin, silver, gold or alloys thereof. 根據請求項1之熱敏電阻元件,其另包含通過該第一絕緣層之導熱連接件,該導熱連接件連接該第一導熱層及第一導電構件。The thermistor element of claim 1 further comprising a thermally conductive connection member through the first insulating layer, the thermally conductive connector connecting the first thermally conductive layer and the first electrically conductive member. 根據請求項12之熱敏電阻元件,其中該導熱連接件之導熱率至少為30W/m-K。The thermistor element of claim 12, wherein the thermally conductive connector has a thermal conductivity of at least 30 W/m-K. 根據請求項12之熱敏電阻元件,其中該導熱連接件包含鎳、銅、鋁、鉛、錫、銀、金或其合金。The thermistor element of claim 12, wherein the thermally conductive connector comprises nickel, copper, aluminum, lead, tin, silver, gold or alloys thereof. 根據請求項1之熱敏電阻元件,其中該第一絕緣層包含聚丙烯、玻璃纖維或散熱材料。The thermistor element of claim 1, wherein the first insulating layer comprises polypropylene, fiberglass or a heat dissipating material. 根據請求項1之熱敏電阻元件,其中該第一絕緣層之導熱率至少為0.5W/m-K。The thermistor element of claim 1, wherein the first insulating layer has a thermal conductivity of at least 0.5 W/m-K. 根據請求項1之熱敏電阻元件,其另包含第一導電連接件及第二導電連接件,其中第一導電連接件用於電氣連接該第一電極及第一導電構件,第二導電連接件用於連接第二電極及第二導電構件。The thermistor element of claim 1, further comprising a first conductive connector and a second conductive connector, wherein the first conductive connector is for electrically connecting the first electrode and the first conductive member, and the second conductive connector For connecting the second electrode and the second conductive member. 根據請求項2之熱敏電阻元件,其中該第一表面中第一電極、第二電極和第一導熱層之面積總和為第一表面的面積之50~80%。The thermistor element of claim 2, wherein the sum of the areas of the first electrode, the second electrode and the first heat conducting layer in the first surface is 50 to 80% of the area of the first surface.
TW100140471A 2011-11-07 2011-11-07 Thermistor TWI428939B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100140471A TWI428939B (en) 2011-11-07 2011-11-07 Thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100140471A TWI428939B (en) 2011-11-07 2011-11-07 Thermistor

Publications (2)

Publication Number Publication Date
TW201320114A true TW201320114A (en) 2013-05-16
TWI428939B TWI428939B (en) 2014-03-01

Family

ID=48872597

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100140471A TWI428939B (en) 2011-11-07 2011-11-07 Thermistor

Country Status (1)

Country Link
TW (1) TWI428939B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332959A (en) * 2013-07-22 2015-02-04 聚鼎科技股份有限公司 overcurrent protection device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332959A (en) * 2013-07-22 2015-02-04 聚鼎科技股份有限公司 overcurrent protection device
TWI500229B (en) * 2013-07-22 2015-09-11 Polytronics Technology Corp Over-current protection apparatus
CN104332959B (en) * 2013-07-22 2017-12-29 聚鼎科技股份有限公司 overcurrent protection device

Also Published As

Publication number Publication date
TWI428939B (en) 2014-03-01

Similar Documents

Publication Publication Date Title
TWI433169B (en) Surface mountable thermistor
JP3073003U (en) Surface mount type electric device
TWI503850B (en) Over-current protection device
US8502638B1 (en) Thermistor
TWI449060B (en) Over-current protection device
TWI503849B (en) Micro resistor
TWI497535B (en) Micro-resistive device with soft material layer and manufacture method for the same
JPWO2010113341A1 (en) Metal plate resistor for current detection and manufacturing method thereof
CN103247399B (en) Surface tack thermistor element
US11778739B2 (en) Thermally conductive board
US9224525B2 (en) Over-current protection device and circuit board structure containing the same
TWI428939B (en) Thermistor
CN103106988B (en) Thermistor element
US8803653B2 (en) Over-current protection device
TWI493576B (en) Over-current protection device and protective curcuit board containing the same
KR101075664B1 (en) Chip resister and method of manufacturing the same
TW201618128A (en) Circuit protection device
CN205104313U (en) Over -current protection element
TWI582799B (en) Metal plate micro resistance
CN216353618U (en) Small-size surface mounting circuit protection component
TWM467242U (en) Over-current protection apparatus
CN210575321U (en) Chip thermistor and electronic device
CN103650647B (en) The manufacture method of installation base plate radiating stacking material
CN115985600A (en) Small-size surface-mounted circuit protection component and production method thereof
TW201901706A (en) Surface-mountable over-current protection device

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees