TW201319637A - Method for starting surface treatment of film and surface-treatment device - Google Patents

Method for starting surface treatment of film and surface-treatment device Download PDF

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TW201319637A
TW201319637A TW101135166A TW101135166A TW201319637A TW 201319637 A TW201319637 A TW 201319637A TW 101135166 A TW101135166 A TW 101135166A TW 101135166 A TW101135166 A TW 101135166A TW 201319637 A TW201319637 A TW 201319637A
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film
reaction gas
discharge
gas
plasma
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Junnosuke Murakami
Yoshinori Nakano
Shinichi Kawasaki
Mitsuhide Nogami
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Sekisui Chemical Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12Chemical modification
    • C08J7/16Chemical modification with polymerisable compounds
    • C08J7/18Chemical modification with polymerisable compounds using wave energy or particle radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/62Plasma-deposition of organic layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/02Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
    • B05D7/04Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00Characterised by the use of unspecified polymers
    • C08J2300/16Biodegradable polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2301/00Characterised by the use of cellulose, modified cellulose or cellulose derivatives
    • C08J2301/08Cellulose derivatives
    • C08J2301/10Esters of organic acids
    • C08J2301/12Cellulose acetate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C08J2433/04Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
    • C08J2433/06Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Polarising Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

In the present invention, loss of a film to be treated is minimized or prevented, when a surface treatment on a film to be treated is started using a reaction gas containing a polymerizable monomer. Delivery of the reaction gas from a supply source (31) is started, and the delivered reaction gas is discharged without being sent to a supply nozzle (33). After a required amount of time (T1) has elapsed following the start of delivery, transfer of a film (9) to be treated is started. Also started is the bringing of discharge gas that has been transformed into plasma into contact with the film (9) to be treated. The discharging of the reaction gas is stopped, and blowing out of the reaction gas from the supply nozzle (33) is started.

Description

膜之表面處理開始方法及表面處理裝置 Film surface treatment starting method and surface treatment device

本發明係關於一種對樹脂製之被處理膜進行表面處理時,開始該表面處理之方法及表面處理裝置,例如係關於一種適用於偏光板之保護膜之接著性提高處理等之膜表面處理開始方法及表面處理裝置。 The present invention relates to a method and a surface treatment apparatus for starting a surface treatment of a resin-treated film, for example, a film surface treatment for an adhesion improving treatment of a protective film suitable for a polarizing plate, etc. Method and surface treatment device.

例如,於液晶顯示裝置中安裝有偏光板。偏光板包含偏光膜與保護膜。通常,偏光膜含有包含聚乙烯醇(PVA,polyvinyl alcohol)作為主成分之PVA膜。保護膜含有包含三乙醯纖維素(TAC,triacetyl cellulose)作為主成分之TAC膜。作為接著該等膜之接著劑,使用有聚乙烯醇系或聚醚系等之水系接著劑。雖然PVA膜與上述接著劑之接著性良好,但TAC膜之接著性並不良好。因此,為了提高TAC膜之接著性而進行皂化處理。皂化處理係將TAC膜浸漬於高溫、高濃度之鹼溶液中。因此,指出有作業性或廢液處理之問題。 For example, a polarizing plate is mounted in a liquid crystal display device. The polarizing plate includes a polarizing film and a protective film. Usually, the polarizing film contains a PVA film containing polyvinyl alcohol (PVA) as a main component. The protective film contains a TAC film containing triacetyl cellulose (TAC) as a main component. A water-based adhesive such as a polyvinyl alcohol-based or polyether-based adhesive is used as an adhesive for the film. Although the adhesion between the PVA film and the above-mentioned adhesive is good, the adhesion of the TAC film is not good. Therefore, the saponification treatment is performed in order to improve the adhesion of the TAC film. The saponification treatment immerses the TAC film in a high-temperature, high-concentration alkali solution. Therefore, it is pointed out that there is a problem of workability or waste disposal.

作為代替技術,於專利文獻1中,在上述接著步驟前,於保護膜之表面形成聚合性單體之薄膜後,照射大氣壓電漿。聚合性單體例如自溶液之狀態汽化而以蒸氣之狀態送至保護膜,並於保護膜之表面上凝縮。並且,由上述大氣壓電漿之照射而產生聚合性單體之電漿聚合反應,於保護膜之表面形成聚合性單體之電漿聚合膜。 As an alternative technique, in Patent Document 1, a film of a polymerizable monomer is formed on the surface of the protective film before the subsequent step, and then the atmospheric piezoelectric slurry is irradiated. The polymerizable monomer is vaporized from the state of the solution, for example, and is sent to the protective film in a vapor state, and is condensed on the surface of the protective film. Further, a plasma polymerization reaction of a polymerizable monomer is caused by irradiation of the above-mentioned atmospheric piezoelectric slurry, and a plasma polymerization film of a polymerizable monomer is formed on the surface of the protective film.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2009-25604號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-25604

開始偏光板用保護膜等被處理膜之表面處理(包括暫時停止後之再次開始)時,直至聚合性單體之供給濃度穩定為止需要某種程度之時間(穩定化期間)。因此,被處理膜之搬送方向之前端部分中之上述穩定化期間中搬送之長度部分的處理狀態變得不穩定。因此,必需廢棄被處理膜之上述長度部分,損耗較大。 When the surface treatment of the film to be processed such as a protective film for a polarizing plate (including restarting after the temporary stop) is started, it takes a certain amount of time (stabilization period) until the supply concentration of the polymerizable monomer is stabilized. Therefore, the processing state of the length portion transported in the above-described stabilization period in the front end portion of the processed film in the transport direction becomes unstable. Therefore, it is necessary to discard the above-mentioned length portion of the film to be processed, and the loss is large.

為解決上述課題,本發明方法係一種表面處理開始方法,其特徵在於:其係藉由使含有聚合性單體之反應氣體及電漿化(包括激發、活化、自由基化、離子化等)之放電氣體接觸於樹脂製之被處理膜而對上述被處理膜進行表面處理時,開始上述表面處理之表面處理開始方法;並且其一面自反應氣體供給源開始送出上述反應氣體,一面不將送出之上述反應氣體送至面向上述被處理膜之供給噴嘴之噴出口而排出;且自上述送出開始起經過所需時間後,開始搬送上述被處理膜、及使上述電漿化之放電氣體接觸於上述被處理膜,進而,停止上述排出而開始自上述噴出口噴出反應氣體。 In order to solve the above problems, the method of the present invention is a surface treatment starting method characterized in that a reaction gas containing a polymerizable monomer and a plasma (including excitation, activation, radicalization, ionization, etc.) are used. When the discharge gas is brought into contact with the resin-treated film to surface-treat the film to be treated, the surface treatment start method of the surface treatment is started; and the reaction gas is sent from the reaction gas supply source without being sent out. The reaction gas is sent to the discharge port of the supply nozzle facing the film to be processed, and is discharged after the elapse of a predetermined period of time from the start of the discharge, and the discharge of the plasma to be treated is started. The film to be treated further stops the discharge and starts to eject the reaction gas from the discharge port.

通常自供給源開始送出反應氣體後,反應氣體中之聚合性單體濃度暫時不穩定。一面不將該反應氣體噴附於被處 理膜上而排出,一面等特聚合性單體濃度穩定化。其後,開始上述被處理膜之搬送等而開始表面處理。藉此,可抑制或防止被處理膜之搬送方向之前端部分之處理狀態變得不穩定,可縮小此種處理狀態不穩定之膜部分之長度,或可不形成上述處理狀態不穩定之膜部分。藉此,可抑制或防止被處理膜之損耗。即便於由於某些故障等而暫時停止後之再次開始時,亦可藉由採用本發明方法而抑制或防止被處理膜之損耗。 Usually, the concentration of the polymerizable monomer in the reaction gas is temporarily unstable after the reaction gas is sent from the supply source. Do not spray the reaction gas on the side The film is discharged on the film, and the concentration of the polymerizable monomer is stabilized. Thereafter, the surface of the film to be processed is transferred, and the surface treatment is started. Thereby, it is possible to suppress or prevent the treatment state of the end portion in the conveyance direction of the film to be processed from becoming unstable, and it is possible to reduce the length of the film portion which is unstable in such a treatment state, or to form a film portion which is unstable in the above-described treatment state. Thereby, the loss of the film to be treated can be suppressed or prevented. That is, it is also possible to suppress or prevent the loss of the film to be treated by using the method of the present invention when it is convenient to start again after a temporary stop due to some malfunction or the like.

上述所需時間較佳為對應於直至上述反應氣體中之上述聚合性單體之濃度穩定為止之穩定化期間。藉此,於被處理膜之搬送開始時,進而於表面處理之開始時,可使聚合性單體濃度確實地穩定。因此,可自被處理膜之表面處理之開始最初起使處理狀態確實地穩定。因此,可進一步確實地抑制或防止被處理膜之損耗。 The above-mentioned required time is preferably a stabilization period corresponding to the stabilization of the concentration of the polymerizable monomer in the reaction gas. Thereby, the concentration of the polymerizable monomer can be reliably stabilized at the start of the conveyance of the film to be processed and at the start of the surface treatment. Therefore, the treatment state can be surely stabilized from the beginning of the surface treatment of the film to be treated. Therefore, the loss of the treated film can be further suppressed or prevented.

較佳為開始搬送上述被處理膜,繼而開始使上述電漿化之放電氣體接觸於上述被處理膜。藉此,可避免被處理膜之特定部位由於持續之電漿照射而受到較大之熱損害,進而可防止被處理膜於上述特定部位斷裂。 It is preferable to start the conveyance of the film to be processed, and then start to bring the plasma discharge gas into contact with the film to be processed. Thereby, it is possible to prevent a specific portion of the film to be treated from being subjected to a large heat damage due to continuous plasma irradiation, and further, it is possible to prevent the film to be processed from being broken at the specific portion.

較佳為開始使上述電漿化之放電氣體接觸於上述被處理膜,繼而開始自上述供給噴嘴噴出上述反應氣體。藉此可自開始從上述供給噴嘴噴出上述反應氣體最初起便確實地產生聚合性單體之電漿聚合反應,可於被處理膜之表面確實地形成聚合性單體之電漿聚合膜。因此,可防止聚合性單體以單體之形式直接殘留於被處理膜上。因此,可防止 上述殘留單體轉移至被處理膜之搬送路徑上之裝置構件或周邊構件。或可防止上述殘留單體轉移至該表面處理之後續步驟中使用之設備。其結果,可防止由上述轉移(轉印)而導致之良率之降低。 Preferably, the discharge of the plasma-discharged gas is started to contact the film to be treated, and then the reaction gas is discharged from the supply nozzle. Thereby, the plasma polymerization reaction of the polymerizable monomer can be surely generated from the start of the discharge of the reaction gas from the supply nozzle, and the plasma polymerization film of the polymerizable monomer can be surely formed on the surface of the film to be treated. Therefore, it is possible to prevent the polymerizable monomer from remaining directly on the film to be treated in the form of a monomer. Therefore, it can be prevented The residual monomer is transferred to the device member or the peripheral member on the transport path of the film to be treated. Alternatively, the above residual monomer can be prevented from being transferred to the equipment used in the subsequent step of the surface treatment. As a result, it is possible to prevent a decrease in the yield due to the above transfer (transfer).

本發明裝置係一種膜表面處理裝置,其特徵在於:其係藉由使含有聚合性單體之反應氣體及電漿化之放電氣體接觸於樹脂製之被處理膜而對上述被處理膜進行表面處理者;並且其包括:反應氣體供給系統,其包含自上述反應氣體之供給源延伸之供給通路、及連接於上述供給通路之下游端之供給噴嘴;支持搬送機構,其以與上述供給噴嘴相對面之方式支持上述被處理膜,且沿搬送路徑搬送上述被處理膜;電漿生成部,其於上述搬送路徑上之較上述供給噴嘴下游將放電氣體電漿化;排出通路,其連接於上述反應氣體供給系統之中途部;及控制機構,其於開始上述表面處理時,使自上述供給源送出之上述反應氣體自上述排出通路排出,自上述送出開始起經過所需時間後,開始上述搬送及上述電漿化,並且停止上述排出而開始自上述供給噴嘴噴出上述反應氣體。 The apparatus of the present invention is a film surface treatment apparatus characterized in that the surface of the film to be treated is surface-contacted by bringing a reaction gas containing a polymerizable monomer and a plasma discharge gas into contact with a resin-made film to be treated. a processor; the reaction gas supply system comprising: a supply passage extending from a supply source of the reaction gas; and a supply nozzle connected to a downstream end of the supply passage; and a support transport mechanism opposite to the supply nozzle Supporting the processed film, and transporting the processed film along the transport path; the plasma generating unit plasma-dissolving the discharge gas downstream of the supply nozzle on the transport path; and the discharge path is connected to the above a middle portion of the reaction gas supply system; and a control unit that discharges the reaction gas sent from the supply source from the discharge passage when the surface treatment is started, and starts the transfer after a lapse of a lapse of time from the start of the delivery And the above-mentioned plasma formation, and stopping the discharge and starting to eject the reaction from the supply nozzle Body.

藉由上述控制機構之控制,而自反應氣體之送出開始起直至經過所需時間,不將反應氣體噴附於被處理膜上而排出。因此,可避免於聚合性單體之濃度不穩定之狀態下進 行被處理膜之表面處理。其後,開始上述被處理膜之搬送等而開始表面處理,藉此,可抑制或防止被處理膜之搬送方向之前端部分之處理狀態變得不穩定,可縮小此種處理狀態不穩定之膜部分之長度,或可不形成上述處理狀態不穩定之膜部分。藉此,可抑制或防止被處理膜之損耗。 By the control of the above-described control means, the reaction gas is not sprayed onto the film to be processed and discharged from the start of the reaction of the reaction gas until the elapse of the required time. Therefore, it can be avoided that the concentration of the polymerizable monomer is unstable. The surface of the treated film is treated. Then, the surface treatment is started by the conveyance of the film to be processed, etc., thereby suppressing or preventing the treatment state of the end portion in the conveyance direction of the film to be processed from being unstable, and the film having such an unstable treatment state can be reduced. The length of the portion may not form a portion of the film which is unstable in the above treatment state. Thereby, the loss of the film to be treated can be suppressed or prevented.

上述電漿化及表面處理較佳為於大氣壓附近下進行。此處,所謂大氣壓附近係指1.013×104~50.663×104 Pa之範圍,若考慮壓力調整之容易化或裝置構成之簡便化,則較佳為1.333×104~10.664×104 Pa,更佳為9.331×104~10.397×104 Pa。 The above plasma formation and surface treatment are preferably carried out in the vicinity of atmospheric pressure. Here, the vicinity of the atmospheric pressure means a range of 1.013 × 10 4 to 50.663 × 10 4 Pa, and in consideration of ease of pressure adjustment or simplification of the device configuration, it is preferably 1.333 × 10 4 to 10.664 × 10 4 Pa. More preferably, it is 9.331 × 10 4 ~ 10.397 × 10 4 Pa.

本發明較佳用於難接著性之光學樹脂膜之處理,且較佳用於將該難接著性之光學樹脂膜接著於易接著性之光學樹脂膜上時,提高難接著性之光學樹脂膜之接著性。 The present invention is preferably used for the treatment of an optical resin film which is difficult to bond, and is preferably used for an optical resin film which is difficult to adhere when the optical resin film which is difficult to adhere is attached to an optical resin film which is easy to adhere. Continuity.

作為上述難接著性之光學樹脂膜之主成分,例如可列舉:三乙醯纖維素(TAC)、聚丙烯(PP,polypropylene)、聚乙烯(PE,polyethylene)、環烯烴聚合物(COP,cycloolefin polymer)、環烯烴共聚物(COC,cycloolefin copolymer)、聚對苯二甲酸乙二酯(PET,polyethylene terephthalate)、聚甲基丙烯酸甲酯(PMMA,polymethyl methacrylate)、聚醯亞胺(PI,polyimide)等。 Examples of the main component of the above-mentioned difficult-to-adhere optical resin film include triacetyl cellulose (TAC), polypropylene (PP), polyethylene (PE), and cycloolefin polymer (COP, cycloolefin). Polymer), cycloolefin copolymer (COC), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA, polymethyl methacrylate), polyimine (PI, polyimide) )Wait.

作為上述易接著性之光學樹脂膜之主成分,例如可列舉:聚乙烯醇(PVA)、乙烯-乙酸乙烯酯共聚物(EVA,ethylene-vinyl acetate copolymer)等。 The main component of the above-mentioned easy-to-adhere optical resin film is, for example, polyvinyl alcohol (PVA) or ethylene-vinyl acetate copolymer (EVA).

作為上述聚合性單體,可列舉具有不飽和鍵及特定之官 能基之單體。特定之官能基較佳為選自羥基、羧基、乙醯基、縮水甘油基、環氧基、碳數為1~10之酯基、碸基、醛基,尤其是較佳為羧基或羥基等親水基。 Examples of the above polymerizable monomer include an unsaturated bond and a specific official. The monomer of the energy base. The specific functional group is preferably selected from the group consisting of a hydroxyl group, a carboxyl group, an ethyl fluorenyl group, a glycidyl group, an epoxy group, an ester group having a carbon number of 1 to 10, a mercapto group, an aldehyde group, and particularly preferably a carboxyl group or a hydroxyl group. Hydrophilic group.

作為具有不飽和鍵及羥基之單體,可列舉乙二醇甲基丙烯酸酯、烯丙醇、甲基丙烯酸羥基乙酯等。 Examples of the monomer having an unsaturated bond and a hydroxyl group include ethylene glycol methacrylate, allyl alcohol, and hydroxyethyl methacrylate.

作為具有不飽和鍵及羧基之單體,可列舉丙烯酸、甲基丙烯酸、伊康酸、順丁烯二酸、2-甲基丙烯醯基丙酸等。 Examples of the monomer having an unsaturated bond and a carboxyl group include acrylic acid, methacrylic acid, itaconic acid, maleic acid, and 2-methylpropenylpropionic acid.

作為具有不飽和鍵及乙醯基之單體,可列舉乙酸乙烯酯等。 Examples of the monomer having an unsaturated bond and an acetyl group include vinyl acetate and the like.

作為具有不飽和鍵及縮水甘油基之單體,可列舉甲基丙烯酸縮水甘油酯等。 Examples of the monomer having an unsaturated bond and a glycidyl group include glycidyl methacrylate and the like.

作為具有不飽和鍵及酯基之單體,可列舉:丙烯酸甲酯、丙烯酸乙酯、丙烯酸丁酯、丙烯酸第三丁酯、丙烯酸2-乙基己酯、丙烯酸辛酯、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丁酯、甲基丙烯酸第三丁酯、甲基丙烯酸異丙酯、甲基丙烯酸2-乙酯等。 Examples of the monomer having an unsaturated bond and an ester group include methyl acrylate, ethyl acrylate, butyl acrylate, tert-butyl acrylate, 2-ethylhexyl acrylate, octyl acrylate, and methyl methacrylate. Ethyl methacrylate, butyl methacrylate, butyl methacrylate, isopropyl methacrylate, 2-ethyl methacrylate, and the like.

作為具有不飽和鍵及醛基之單體,可列舉丙烯醛、巴豆醛等。 Examples of the monomer having an unsaturated bond and an aldehyde group include acrolein and crotonaldehyde.

上述聚合性單體較佳為具有乙烯性不飽和雙鍵及羧基之單體。作為此種單體,可列舉丙烯酸(CH2=CHCOOH)、甲基丙烯酸(CH2=C(CH3)COOH)。上述聚合性單體較佳為丙烯酸或甲基丙烯酸。藉此,可確實地提高難接著性樹脂膜之接著性。上述聚合性單體更佳為丙烯酸。 The polymerizable monomer is preferably a monomer having an ethylenically unsaturated double bond and a carboxyl group. Examples of such a monomer include acrylic acid (CH 2 =CHCOOH) and methacrylic acid (CH 2 =C(CH 3 )COOH). The above polymerizable monomer is preferably acrylic acid or methacrylic acid. Thereby, the adhesion of the difficult-to-adhere resin film can be surely improved. The above polymerizable monomer is more preferably acrylic acid.

於上述被處理膜為COP、COC、PP、PE等烯烴系單體聚 合膜之情形時,上述反應氣體較佳為含有水溶性單體及烯烴系單體作為聚合性單體。反應氣體中之烯烴系單體之體積濃度較佳為水溶性單體之體積濃度之1.1倍以上。 The film to be treated is an olefin monomer such as COP, COC, PP or PE. In the case of a film, the reaction gas preferably contains a water-soluble monomer and an olefin-based monomer as a polymerizable monomer. The volume concentration of the olefin monomer in the reaction gas is preferably 1.1 times or more the volume concentration of the water-soluble monomer.

烯烴系單體為具有雙鍵且不具有極性官能基之不飽和烴,可為直鏈狀,亦可為環狀,雙鍵之數可為1個,亦可為2個以上。較佳為使用於室溫附近為液體,且容易汽化者作為烯烴系單體。烯烴系單體之碳數較佳為5以上且8以下。具體而言,作為直鏈狀之烯烴系單體,可列舉1-戊烯、1-己烯、1-庚烯、1-辛烯等。較佳為於直鏈之末端具有雙鍵者,但並不特別限定於此。作為環狀之烯烴系單體,可列舉1-環戊烯、1-環己烯、1-環庚烯、1-環辛烯,此外可列舉環戊二烯、二環戊二烯(DCPD,dicyclopentadiene)等環狀二烯。上述烯烴系單體較佳為環狀二烯,尤其是較佳為環戊二烯、或二環戊二烯。藉此,可提高液化層以及接著促進層與烯烴系單體聚合膜之相容性,尤其是可提高與包含環烯烴聚合物(COP)之膜之相容性。並且,環狀二烯容易藉由狄耳士-阿德爾(Diels-alder)反應等而聚合,且容易與水溶性單體進行共聚。 The olefin-based monomer is an unsaturated hydrocarbon having a double bond and having no polar functional group, and may be linear or cyclic, and the number of double bonds may be one or two or more. It is preferably used as a liquid in the vicinity of room temperature, and is easily vaporized as an olefin type monomer. The carbon number of the olefin monomer is preferably 5 or more and 8 or less. Specifically, examples of the linear olefin-based monomer include 1-pentene, 1-hexene, 1-heptene, and 1-octene. It is preferred to have a double bond at the end of the linear chain, but it is not particularly limited thereto. Examples of the cyclic olefin-based monomer include 1-cyclopentene, 1-cyclohexene, 1-cycloheptene, and 1-cyclooctene, and examples thereof include cyclopentadiene and dicyclopentadiene (DCPD). , dicyclopentadiene) and other cyclic diene. The above olefin-based monomer is preferably a cyclic diene, and particularly preferably cyclopentadiene or dicyclopentadiene. Thereby, the compatibility of the liquefied layer and the subsequent promoting layer with the olefin-based monomer polymerized film can be improved, and in particular, the compatibility with the film containing the cyclic olefin polymer (COP) can be improved. Further, the cyclic diene is easily polymerized by a Diels-alder reaction or the like, and is easily copolymerized with a water-soluble monomer.

上述水溶性單體較佳為具有醛基、羧基、或羥基之單體。藉此,可提高與包含PVA等具有極性之成分之接著劑或偏光元件等被接著構件之相容性。具體而言,作為水溶性單體,可列舉:乙醛、乙烯醇、丙烯酸(AA,acrylic acid)、甲基丙烯酸、苯乙烯磺酸、丙烯醯胺、甲基丙烯醯胺、N,N-二甲基胺基丙基丙烯醯胺、N,N-二甲基醯胺等。 作為水溶性單體,尤其是較佳為乙醛、或丙烯酸。乙醛係構成乙烯醇與酮-烯醇互變異構物,且與乙烯醇共存之化合物。因此,可提高與乙烯醇系之接著劑或偏光元件等之相容性。 The water-soluble monomer is preferably a monomer having an aldehyde group, a carboxyl group, or a hydroxyl group. Thereby, compatibility with an adhering member such as an adhesive containing a polar component such as PVA or a polarizing element can be improved. Specifically, examples of the water-soluble monomer include acetaldehyde, vinyl alcohol, acrylic acid (AA), methacrylic acid, styrenesulfonic acid, acrylamide, methacrylamide, and N,N- Dimethylaminopropyl acrylamide, N,N-dimethyl decylamine, and the like. As the water-soluble monomer, acetaldehyde or acrylic acid is particularly preferable. Acetaldehyde is a compound which constitutes a vinyl alcohol and a keto-enol tautomer and which coexists with vinyl alcohol. Therefore, compatibility with a vinyl alcohol-based adhesive or a polarizing element can be improved.

上述反應氣體亦可包含搬送聚合性單體之載氣。載氣較佳為選自氮氣、氬氣、氦氣等惰性氣體。就經濟性之觀點而言,較佳為使用氮氣作為載氣。 The reaction gas may also include a carrier gas for transporting the polymerizable monomer. The carrier gas is preferably an inert gas selected from the group consisting of nitrogen, argon, and helium. From the viewpoint of economy, it is preferred to use nitrogen as a carrier gas.

多數丙烯酸或甲基丙烯酸等聚合性單體於常溫常壓下為液相。可使此種聚合性單體於惰性氣體等載氣中汽化。作為使聚合性單體於載氣中汽化之方法,可列舉:利用載氣擠壓聚合性單體溶液之液面上之飽和蒸氣之方法;使載氣於聚合性單體溶液中起泡之方法;加熱聚合性單體溶液而促進蒸發之方法等。亦可併用擠壓與加熱、或起泡與加熱。該等汽化方法較佳為利用汽化器進行。於任一汽化方法中,自汽化開始起直至反應氣體中之聚合性單體濃度穩定為止均花費時間。又,於連接汽化器與供給噴嘴之反應氣體供給通路中,直至上述濃度穩定為止亦花費時間。即,於聚合性單體汽化時,必需汽化潛熱。因此,汽化器內之溫度於汽化操作剛開始後暫時降低。其後,汽化器之溫度藉由調溫機構等之動作而向設定溫度緩慢恢復。於該汽化器之溫度變動之期間中,反應氣體中之聚合性單體濃度不穩定。進而,於反應氣體供給通路中,亦由於反應氣體中之聚合性單體吸附於構成該反應氣體供給通路之管之內壁,或凝縮之聚合性單體汽化,故而於自反應氣體之供 給開始起直至上述吸附及汽化成為平衡狀態為止之間,供給中之反應氣體之聚合性單體濃度變得不穩定。結果,自供給噴嘴噴出之反應氣體中之聚合性單體濃度變穩定會耗費某種程度之時間。根據本發明,即便有此種聚合性單體濃度之不穩定期間,亦可抑制或防止被處理膜之搬送方向之前端部分之處理狀態變得不穩定,並抑制或防止被處理膜之損耗。 Most of the polymerizable monomers such as acrylic acid or methacrylic acid are in a liquid phase at normal temperature and normal pressure. Such a polymerizable monomer can be vaporized in a carrier gas such as an inert gas. As a method of vaporizing a polymerizable monomer in a carrier gas, a method of extruding a saturated vapor on a liquid surface of a polymerizable monomer solution with a carrier gas; and bubbling a carrier gas in a polymerizable monomer solution is exemplified. Method; a method of heating a polymerizable monomer solution to promote evaporation, and the like. Squeeze and heat, or foaming and heating may also be used in combination. These vaporization methods are preferably carried out using a vaporizer. In any of the vaporization methods, it takes time from the start of vaporization until the concentration of the polymerizable monomer in the reaction gas is stabilized. Further, it takes time to stabilize the concentration in the reaction gas supply path connecting the vaporizer and the supply nozzle. That is, when the polymerizable monomer is vaporized, it is necessary to vaporize latent heat. Therefore, the temperature in the vaporizer is temporarily lowered immediately after the vaporization operation. Thereafter, the temperature of the vaporizer is slowly recovered to the set temperature by the operation of the temperature adjustment mechanism or the like. During the temperature fluctuation of the vaporizer, the concentration of the polymerizable monomer in the reaction gas is unstable. Further, in the reaction gas supply passage, the polymerizable monomer in the reaction gas is adsorbed to the inner wall of the tube constituting the reaction gas supply passage, or the condensed polymerizable monomer is vaporized, so that the self-reactive gas is supplied. The concentration of the polymerizable monomer of the reaction gas in the supply becomes unstable until the adsorption and vaporization are brought into an equilibrium state from the start. As a result, it takes a certain amount of time for the concentration of the polymerizable monomer in the reaction gas ejected from the supply nozzle to become stable. According to the present invention, even in the unstable period of the concentration of the polymerizable monomer, the treatment state of the end portion in the conveyance direction of the film to be treated can be suppressed or prevented from becoming unstable, and the loss of the film to be treated can be suppressed or prevented.

於加熱聚合性單體而使其汽化之情形時,考慮加熱器之負擔,聚合性單體較佳為選擇沸點為300℃以下者。又,聚合性單體較佳為選擇不藉由加熱而分解(化學變化)者。 In the case where the polymerizable monomer is heated and vaporized, the polymerizable monomer is preferably selected to have a boiling point of 300 ° C or less in consideration of the burden of the heater. Further, it is preferred that the polymerizable monomer is selected so as not to be decomposed (chemically changed) by heating.

作為上述放電氣體,可列舉:氮氣(N2)或稀有氣體(Ar、Ne、He等)稀有氣體。 Examples of the discharge gas include a rare gas of nitrogen (N 2 ) or a rare gas (Ar, Ne, He, etc.).

根據本發明,於開始被處理膜脂之表面處理時,可抑制或防止被處理膜之搬送方向之前端部分之處理狀態變得不穩定,可縮小此種不穩定之膜部分之長度,或可防止形成上述不穩定之膜部分。因此,可抑制或防止被處理膜之損耗。 According to the present invention, when the surface treatment of the film grease to be treated is started, the treatment state of the end portion before the conveyance direction of the film to be treated can be suppressed or prevented from becoming unstable, and the length of the unstable film portion can be reduced, or The formation of the above unstable film portion is prevented. Therefore, the loss of the treated film can be suppressed or prevented.

以下,按照圖式對本發明之實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

圖1及圖2表示本發明之一實施形態之膜表面處理裝置1。裝置1之處理對象9係應成為偏光板(膜積層體)之保護膜之樹脂膜。被處理膜9係由含有三乙醯纖維素(TAC)作為主成分之TAC膜構成,且成為連續片狀。膜9之厚度例如為 100 μm左右。 Fig. 1 and Fig. 2 show a film surface treatment apparatus 1 according to an embodiment of the present invention. The object to be treated 9 of the apparatus 1 is a resin film which is a protective film of a polarizing plate (film laminate). The film to be treated 9 is composed of a TAC film containing triacetyl cellulose (TAC) as a main component, and is formed into a continuous sheet shape. The thickness of the film 9 is, for example, About 100 μm.

再者,被處理膜9並不限定於TAC膜,亦可為包含聚丙烯(PP)、聚乙烯(PE)、環烯烴聚合物(COP)、環烯烴共聚物(COC)、聚對苯二甲酸乙二酯(PET)、聚甲基丙烯酸甲酯(PMMA)、聚醯亞胺(PI)等各種樹脂之膜。 Further, the film to be treated 9 is not limited to the TAC film, and may be composed of polypropylene (PP), polyethylene (PE), cycloolefin polymer (COP), cyclic olefin copolymer (COC), polyparaphenylene. A film of various resins such as ethylene formate (PET), polymethyl methacrylate (PMMA), and polyimine (PI).

如圖1所示,膜表面處理裝置1包括:處理槽C、放電氣體供給系統20、反應氣體供給系統30。於處理槽C之內部收容有兼為支持搬送機構與電漿生成部之處理部10。如圖1及圖2所示,處理部10包含3個主輥11、12、13。主輥11~13成為相互間相同直徑、且相同軸長之圓筒體。各主輥11~13之軸線朝向與圖1之紙面正交之寬度方向w。3個主輥11~13於與w方向正交之水平方向(圖1之左右)上並列。 As shown in FIG. 1, the film surface treatment apparatus 1 includes a treatment tank C, a discharge gas supply system 20, and a reaction gas supply system 30. A processing unit 10 that also supports the transport mechanism and the plasma generating unit is housed inside the processing tank C. As shown in FIGS. 1 and 2, the treatment unit 10 includes three main rolls 11, 12, and 13. The main rolls 11 to 13 are cylindrical bodies having the same diameter and the same axial length. The axes of the main rolls 11 to 13 are oriented in the width direction w orthogonal to the plane of the paper of Fig. 1 . The three main rolls 11 to 13 are juxtaposed in the horizontal direction (left and right in Fig. 1) orthogonal to the w direction.

圖1中,左側之主輥11與中央之主輥12之間形成有間隙4A。中央之主輥12與右側之主輥13之間形成有間隙4B。該等間隙4A、4B之最窄之部位之厚度例如成為約1 mm~數mm左右。 In Fig. 1, a gap 4A is formed between the left main roller 11 and the center main roller 12. A gap 4B is formed between the center main roller 12 and the right main roller 13. The thickness of the narrowest portion of the gaps 4A and 4B is, for example, about 1 mm to several mm.

於主輥11、12之下方配置有一對(複數)反轉輥14A、14A。於主輥12、13之下方配置有一對(複數)反轉輥14B、14B。該等反轉輥14之軸線係與主輥11~13平行。 A pair of (plural) reversing rollers 14A, 14A are disposed below the main rolls 11, 12. A pair of (plural) reversing rollers 14B and 14B are disposed below the main rollers 12 and 13. The axes of the reversing rollers 14 are parallel to the main rollers 11 to 13.

於各主輥11~13上連接有使主輥11~13圍繞軸線旋轉之旋轉機構15(於圖1中,僅圖示主輥13與旋轉機構15之連接)。旋轉機構15包含馬達等驅動部與將該驅動部之驅動力傳達至主輥11~13之軸上的傳達機構。傳達機構例如由傳送帶-滑輪機構或齒輪列構成。 A rotation mechanism 15 for rotating the main rollers 11 to 13 around the axis is connected to each of the main rollers 11 to 13 (in Fig. 1, only the connection of the main roller 13 and the rotation mechanism 15 is shown). The rotation mechanism 15 includes a drive unit such as a motor and a transmission mechanism that transmits the driving force of the drive unit to the axes of the main rollers 11 to 13. The communication mechanism is constituted, for example, by a belt-pulley mechanism or a gear train.

主輥11~13及反轉輥14相互協動而構成依序到達主輥11、反轉輥14A、主輥12、反轉輥14B、主輥13之搬送路徑19。使連續片狀之被處理膜9之連續方向沿著搬送路徑19,且使其寬度方向朝向w方向(與圖1之紙面正交之方向),而將連續片狀之被處理膜9捲繞於輥11~14上。詳細而言,被處理膜9係捲繞於主輥11、12、13之上側之周面上各半周左右。被處理膜9之跨及主輥11與主輥12之間之部分通過間隙4A而垂至較間隙4A下方,並捲繞於反轉輥14A、14A上。被處理膜9之跨及主輥12與主輥13之間之部分通過間隙4B而垂至較間隙4B下方,並捲繞於反轉輥14B、14B上。藉由旋轉機構15,3個主輥11~13相互同步,於圖1中順時針地旋轉,藉此沿搬送路徑19以主輥11、反轉輥14A、主輥12、反轉輥14B、主輥13之順序搬送被處理膜9。被處理膜9之搬送速度例如設定於2 m/min~60 m/min左右之範圍內。 The main rollers 11 to 13 and the reverse roller 14 cooperate with each other to form a transport path 19 that sequentially reaches the main roller 11, the reverse roller 14A, the main roller 12, the reverse roller 14B, and the main roller 13. The continuous sheet-like processed film 9 is wound in the continuous direction along the transport path 19, and the width direction thereof is oriented in the w direction (the direction orthogonal to the plane of the paper of FIG. 1), and the continuous sheet-like processed film 9 is wound. On the rollers 11~14. Specifically, the film to be processed 9 is wound around the circumferential surface of the upper side of the main rolls 11, 12, and 13 for about half a week. The portion of the film to be processed 9 and the portion between the main roller 11 and the main roller 12 are dropped below the gap 4A through the gap 4A, and are wound around the reversing rollers 14A and 14A. The portion of the film to be processed 9 and the portion between the main roller 12 and the main roller 13 are dropped below the gap 4B through the gap 4B, and are wound around the reversing rollers 14B and 14B. By the rotation mechanism 15, the three main rollers 11 to 13 are synchronized with each other, and rotated clockwise in FIG. 1, whereby the main roller 11, the reverse roller 14A, the main roller 12, the reverse roller 14B, and the like, along the conveyance path 19, The main film 13 sequentially transports the film to be processed 9. The conveyance speed of the film to be processed 9 is set, for example, in the range of about 2 m/min to 60 m/min.

雖省略圖示,但於各主輥11、12、13之內部設置有水等調溫介質流動之調溫通路(膜調溫機構)。藉此,可對主輥11~13進行調溫,進而可調節接觸於該主輥11~13之被處理膜9之溫度。主輥11~13以及被處理膜9之設定溫度較佳為低於下述聚合性單體之凝縮溫度之溫度。 Although not shown in the drawings, a temperature control passage (membrane temperature adjustment mechanism) through which a temperature control medium such as water flows is provided inside each of the main rolls 11, 12, and 13. Thereby, the main rolls 11 to 13 can be tempered, and the temperature of the film 9 to be treated which is in contact with the main rolls 11 to 13 can be adjusted. The set temperatures of the main rolls 11 to 13 and the film to be treated 9 are preferably lower than the condensation temperature of the polymerizable monomer described below.

主輥11~13兼為電漿生成部10之電極。以下,亦適當將主輥11、12、13分別稱為輥電極11、12、13。詳細而言,各輥電極11~13之至少外周部分由金屬構成,且於該金屬部分之外周面上被覆有固體介電體層(省略圖示)。電源2連 接於中央之輥電極12。兩側之輥電極11、13係電性地接地。電源2對輥電極12供給高頻電力。供給電力例如為脈衝等間歇波狀,但並不限定於此,亦可為正弦波等連續波狀。藉由該電力供給,從而一面於輥電極11、12之間施加電場而生成電漿放電,一面對輥電極12、13之間施加電場而生成電漿放電。間隙4A成為前段之電漿處理空間。間隙4B成為後段之電漿處理空間。 The main rolls 11 to 13 also serve as electrodes of the plasma generating unit 10. Hereinafter, the main rolls 11, 12, and 13 are also referred to as roll electrodes 11, 12, and 13, respectively. Specifically, at least the outer peripheral portion of each of the roller electrodes 11 to 13 is made of a metal, and a solid dielectric layer (not shown) is coated on the outer peripheral surface of the metal portion. Power supply 2 Connected to the central roller electrode 12. The roller electrodes 11, 13 on both sides are electrically grounded. The power source 2 supplies high frequency power to the roller electrode 12. The supplied electric power is, for example, a intermittent wave such as a pulse, but is not limited thereto, and may be a continuous wave such as a sine wave. By this electric power supply, an electric field is applied between the roller electrodes 11 and 12 to generate a plasma discharge, and an electric field is applied between the roller electrodes 12 and 13 to generate a plasma discharge. The gap 4A becomes the plasma processing space of the front stage. The gap 4B becomes the plasma processing space of the rear stage.

氣體供給系統20、30分別具有對應於前段之處理空間3A、4A的前段管線與對應於後段之處理空間3B、4B的後段管線。以下,關於氣體供給系統20、30之各構成要素,於明示屬於前段管線與後段管線中之哪一個時,對屬於前段管線之構成要素在符號上附加「A」,對屬於後段管線之構成要素在符號上附加「B」。再者,關於下述反應氣體排出系統40亦相同。於圖1中,關於氣體供給系統20、30之全部構成要素,對前段管線之構成要素在符號上附加「A」,對後段管線之構成要素在符號上附加「B」。 The gas supply systems 20, 30 respectively have a front line corresponding to the processing spaces 3A, 4A of the preceding stage and a rear line corresponding to the processing spaces 3B, 4B of the rear stage. In the following, when each of the components of the gas supply systems 20 and 30 is clearly indicated as belonging to the front-end pipeline and the rear-end pipeline, "A" is added to the components belonging to the preceding pipeline, and the constituent elements belonging to the downstream pipeline are added. Attach "B" to the symbol. Further, the same applies to the reaction gas discharge system 40 described below. In FIG. 1, with respect to all the components of the gas supply systems 20 and 30, "A" is added to the components of the preceding pipeline, and "B" is added to the components of the subsequent pipeline.

放電氣體供給系統20之前段及後段之各管線包括:放電氣體源21、放電氣體通路22、放電氣體噴嘴23。於放電氣體源21,使放電氣體經壓縮並貯存。使用氮氣(N2)作為放電氣體。亦可使用Ar、He、Ne等稀有氣體代替N2作為放電氣體。放電氣體通路22自放電氣體源21延伸。於放電氣體通路22上設置有電磁開閉閥54。放電氣體通路22之下游端係連接於放電氣體噴嘴23。 Each of the pipelines in the front stage and the rear stage of the discharge gas supply system 20 includes a discharge gas source 21, a discharge gas passage 22, and a discharge gas nozzle 23. At the discharge gas source 21, the discharge gas is compressed and stored. Nitrogen (N 2 ) was used as the discharge gas. A rare gas such as Ar, He, or Ne may be used instead of N 2 as a discharge gas. The discharge gas passage 22 extends from the discharge gas source 21. An electromagnetic on-off valve 54 is provided in the discharge gas passage 22. The downstream end of the discharge gas passage 22 is connected to the discharge gas nozzle 23.

再者,可由共用之單一之放電氣體源構成前段之放電氣 體源21A與後段之放電氣體源21B,源自該單一之放電氣體源21之放電氣體通路22亦可分支而連接於各放電氣體噴嘴23A、23B。 Furthermore, the discharge gas of the front stage can be constituted by a single discharge gas source which is shared The discharge source 21B of the body source 21A and the subsequent stage, and the discharge gas passage 22 derived from the single discharge gas source 21 may be branched and connected to the discharge gas nozzles 23A and 23B.

前段之放電氣體噴嘴23A係配置於輥電極11、12彼此間之較前段之電漿處理空間4A下側之部分上。如圖2所示,放電氣體噴嘴23A於w方向上較長地延伸,且與w方向正交之截面向上方而變得尖細。放電氣體噴嘴23A之上端(前端)之噴出口23e成為於w方向上延伸之狹縫狀,且面向電漿處理空間4A。來自放電氣體源21A之N2(放電氣體)經由放電氣體通路22A而送至放電氣體噴嘴23A,並自該噴嘴23A之噴出口23e噴出至電漿處理空間4A。 The discharge gas nozzle 23A of the preceding stage is disposed on a portion of the lower side of the plasma processing space 4A of the front stage between the roller electrodes 11, 12. As shown in FIG. 2, the discharge gas nozzle 23A extends long in the w direction, and the cross section orthogonal to the w direction becomes tapered upward. The discharge port 23e of the upper end (front end) of the discharge gas nozzle 23A has a slit shape extending in the w direction and faces the plasma processing space 4A. N 2 (discharge gas) from the discharge gas source 21A is sent to the discharge gas nozzle 23A via the discharge gas passage 22A, and is discharged from the discharge port 23e of the nozzle 23A to the plasma processing space 4A.

後段之放電氣體噴嘴23B係配置於輥電極12、13彼此間之較後段之電漿處理空間4B下側之部分上。放電氣體噴嘴23B於w方向上較長地延伸,且與w方向正交之截面向上方變得尖細。放電氣體噴嘴23B之上端(先端)之噴出口23e成為於w方向上延伸之狹縫狀,且面向電漿處理空間4B。來自放電氣體源21B之N2(放電氣體)經由放電氣體通路22B而送至放電氣體噴嘴23B,並自該噴嘴23B之噴出口23e噴出至電漿處理空間4B。 The discharge gas nozzle 23B of the latter stage is disposed on a portion of the lower side of the plasma processing space 4B of the later stage between the roller electrodes 12 and 13. The discharge gas nozzle 23B extends long in the w direction, and the cross section orthogonal to the w direction becomes tapered upward. The discharge port 23e of the upper end (tip) of the discharge gas nozzle 23B has a slit shape extending in the w direction and faces the plasma processing space 4B. N 2 (discharge gas) from the discharge gas source 21B is sent to the discharge gas nozzle 23B via the discharge gas passage 22B, and is discharged from the discharge port 23e of the nozzle 23B to the plasma processing space 4B.

雖省略圖示,但於各放電氣體噴嘴23之內部設置有使來自放電氣體通路22之放電氣體均勻分散於w方向上之整流部。藉此,放電氣體之噴出氣流成為均勻分佈於w方向上之氣流。又,於各放電氣體噴嘴23之內部設置有水等調溫介質流動之調溫通路(放電氣體調溫機構)。藉此,可對放 電氣體噴嘴23進行調溫,進而可調節放電氣體之噴出時之溫度。放電氣體噴嘴23之設定溫度較佳為低於下述聚合性單體之凝縮溫度之溫度。 Although not shown in the drawings, a rectifying portion that uniformly disperses the discharge gas from the discharge gas passage 22 in the w direction is provided inside each of the discharge gas nozzles 23. Thereby, the discharge gas of the discharge gas becomes a gas flow uniformly distributed in the w direction. Further, a temperature control passage (discharge gas temperature adjustment mechanism) through which a temperature control medium such as water flows is provided inside each discharge gas nozzle 23. With this, you can put The electric gas nozzle 23 is tempered to adjust the temperature at which the discharge gas is ejected. The set temperature of the discharge gas nozzle 23 is preferably lower than the condensation temperature of the polymerizable monomer described below.

於輥電極11、12間之較前段之電漿處理空間4A上側之部分上設置有閉塞構件24A。藉由閉塞構件24A而於某種程度上堵塞電漿處理空間4A之上端部。閉塞構件24A與放電氣體噴嘴23A隔著電漿處理空間4A而上下對向。又,於輥電極12、13間之較後段之電漿處理空間4B上側之部分上設置有閉塞構件24B。藉由閉塞構件24B而於某種程度上堵塞電漿處理空間4B之上端部。閉塞構件24B與放電氣體噴嘴23B隔著電漿處理空間4B而上下對向。可使用與放電氣體噴嘴23相同結構之噴嘴作為閉塞構件24A、24B,使其與放電氣體噴嘴23上下反轉而設置。亦可使自閉塞構件24即上側之噴嘴24亦能夠噴出放電氣體。可自上下之噴嘴24、23同時噴出放電氣體,亦可僅自任一方噴出。 A blocking member 24A is provided on a portion of the upper side of the plasma processing space 4A between the roller electrodes 11 and 12. The upper end portion of the plasma processing space 4A is blocked to some extent by the blocking member 24A. The blocking member 24A and the discharge gas nozzle 23A are vertically opposed to each other via the plasma processing space 4A. Further, a blocking member 24B is provided on a portion of the upper side of the plasma processing space 4B between the roller electrodes 12 and 13. The upper end portion of the plasma processing space 4B is blocked to some extent by the blocking member 24B. The blocking member 24B and the discharge gas nozzle 23B are vertically opposed to each other via the plasma processing space 4B. A nozzle having the same configuration as that of the discharge gas nozzle 23 can be used as the closing members 24A and 24B, and the discharge gas nozzle 23 can be vertically inverted. The discharge gas can also be ejected from the nozzle 24 on the upper side of the occluding member 24. The discharge gas can be simultaneously ejected from the upper and lower nozzles 24, 23, or can be ejected from only one of them.

如圖1所示,反應氣體供給系統30之前段及後段之各管線包括:反應氣體供給源31、反應氣體供給通路32、反應氣體供給噴嘴33。反應氣體供給源31係由使聚合性單體汽化之汽化器構成。使用有丙烯酸(AA)作為聚合性單體。丙烯酸以液體之狀態貯存於汽化器31內。於汽化器31中內藏有加熱器等溫度調節機構(省略圖示)而將丙烯酸維持於設定溫度。又,於汽化器31中附設有載氣源34。作為載氣之氮氣(N2)經壓縮而貯存於載氣源34中。載氣導入通路35自載氣源34延伸,該導入通路35係連接於汽化器31上。於導 入通路35上設置有電磁開閉閥55。 As shown in FIG. 1, each of the previous and subsequent stages of the reaction gas supply system 30 includes a reaction gas supply source 31, a reaction gas supply passage 32, and a reaction gas supply nozzle 33. The reaction gas supply source 31 is composed of a vaporizer that vaporizes the polymerizable monomer. Acrylic acid (AA) was used as a polymerizable monomer. Acrylic acid is stored in the vaporizer 31 in a liquid state. A temperature adjustment mechanism (not shown) such as a heater is incorporated in the vaporizer 31 to maintain acrylic acid at a set temperature. Further, a carrier gas source 34 is attached to the vaporizer 31. Nitrogen gas (N 2 ) as a carrier gas is stored in the carrier gas source 34 by compression. The carrier gas introduction passage 35 extends from the carrier gas source 34, and the introduction passage 35 is connected to the vaporizer 31. An electromagnetic opening and closing valve 55 is provided in the introduction passage 35.

載氣源34係經由導入通路35而將包含氮氣之載氣供給至汽化器31。汽化器31使丙烯酸於上述載氣(N2)中汽化。作為丙烯酸之汽化方式,可為使載氣於丙烯酸之溶液中起泡之起泡方式,亦可為利用載氣擠壓汽化器內之丙烯酸之液面上之飽和蒸氣之擠壓方式。藉由混合汽化之丙烯酸與載氣而生成反應氣體(AA+N2)。 The carrier gas source 34 supplies a carrier gas containing nitrogen to the vaporizer 31 via the introduction passage 35. The vaporizer 31 vaporizes the acrylic acid in the above carrier gas (N 2 ). The vaporization method of acrylic acid may be a foaming method in which a carrier gas is foamed in a solution of acrylic acid, or may be a method of extruding a saturated vapor on a liquid surface of acrylic acid in a vaporizer by using a carrier gas. A reaction gas (AA+N 2 ) is formed by mixing vaporized acrylic acid with a carrier gas.

供給通路32自汽化器31延伸。於構成供給通路32之管上捲附有電熱帶(反應氣體調溫機構)。藉此,可以成為丙烯酸之凝縮溫度以上之方式調節通過供給通路32內之反應氣體之溫度,可防止丙烯酸於供給通路32內凝縮。於供給通路32之下游端連接有供給噴嘴33。 The supply passage 32 extends from the vaporizer 31. A heating belt (reaction gas temperature regulating mechanism) is wound around the tube constituting the supply passage 32. Thereby, the temperature of the reaction gas passing through the supply passage 32 can be adjusted so as to be equal to or higher than the condensation temperature of the acrylic acid, thereby preventing the acrylic acid from being condensed in the supply passage 32. A supply nozzle 33 is connected to the downstream end of the supply passage 32.

再者,亦可由共用之單一之汽化器構成前段之汽化器31A與後段之汽化器31B,源自該單一之汽化器之供給通路32亦可分支而連接於各供給噴嘴33A、33B上。 Further, the vaporizer 31A of the front stage and the vaporizer 31B of the subsequent stage may be constituted by a single vaporizer which is shared, and the supply passage 32 from the single vaporizer may be branched and connected to the respective supply nozzles 33A, 33B.

如圖2所示,供給噴嘴33成為於w方向上較長地延伸之容器狀。如圖1所示,於供給噴嘴33之下表面設置有噴出口33e。雖省略詳細之圖示,但噴出口33e分佈於供給噴嘴33之下表面之長邊方向及短邊方向之較廣範圍。 As shown in Fig. 2, the supply nozzle 33 has a container shape that extends long in the w direction. As shown in FIG. 1, a discharge port 33e is provided on the lower surface of the supply nozzle 33. Although the detailed illustration is omitted, the discharge port 33e is distributed over a wide range of the longitudinal direction and the short side direction of the lower surface of the supply nozzle 33.

前段之供給噴嘴33A係配置於搬送路徑19中之較前段之電漿處理空間4A上游側。具體而言,供給噴嘴33A係配置於主輥11之上方。供給噴嘴33A之下表面與主輥11之上側之周面相對面,進而與主輥11上之被處理膜9相對面。於供給噴嘴33A之下表面與主輥11之上側之周面之間形成有 前段之噴附處理空間3A。被處理膜9通過噴附處理空間3A之內部。於供給噴嘴33A之下表面附設有遮蔽構件36A。自w方向觀察,遮蔽構件36A具有圓弧形狀之截面,且成為於w方向上延伸之彎曲板狀。藉由使遮蔽構件36A較供給噴嘴33A於主輥11之周向之兩側延伸,而使噴附處理空間3A較供給噴嘴33A於主輥11之周向之兩側延長。供給噴嘴33A之噴出口33e貫通遮蔽構件36A而與噴附處理空間3A相連。來自汽化器31A之反應氣體經由供給通路32A而送至供給噴嘴33A,並自該噴嘴33A之噴出口33e噴出至噴附處理空間3A。 The supply nozzle 33A of the preceding stage is disposed on the upstream side of the plasma processing space 4A of the preceding stage in the transport path 19. Specifically, the supply nozzle 33A is disposed above the main roller 11 . The lower surface of the supply nozzle 33A faces the peripheral surface of the upper side of the main roll 11, and is further opposed to the film 9 to be processed on the main roll 11. A surface is formed between the lower surface of the supply nozzle 33A and the outer surface of the upper side of the main roller 11. The front section is sprayed with the processing space 3A. The film to be processed 9 passes through the inside of the processing space 3A. A shielding member 36A is attached to the lower surface of the supply nozzle 33A. The shield member 36A has a circular arc-shaped cross section as viewed in the w direction, and has a curved plate shape extending in the w direction. By causing the shielding member 36A to extend on both sides of the circumferential direction of the main roller 11 from the supply nozzle 33A, the ejection processing space 3A is extended from the supply nozzle 33A on both sides in the circumferential direction of the main roller 11. The discharge port 33e of the supply nozzle 33A passes through the shield member 36A and is connected to the spray processing space 3A. The reaction gas from the vaporizer 31A is sent to the supply nozzle 33A via the supply passage 32A, and is discharged from the discharge port 33e of the nozzle 33A to the spray processing space 3A.

後段之供給噴嘴33B係配置於搬送路徑19中之前段之電漿處理空間4A與後段之電漿處理空間4B之間。具體而言,供給噴嘴33B係配置於主輥12之上方。供給噴嘴33B之下表面與主輥12之上側之周面相對面,進而與主輥12上之被處理膜9相對面。於供給噴嘴33B之下表面與主輥12之上側之周面之間形成有後段之噴附處理空間3B。被處理膜9通過噴附處理空間3B之內部。於供給噴嘴33B之下表面附設有遮蔽構件36B。自w方向觀察,遮蔽構件36B具有圓弧形狀之截面,且成為於w方向上延伸之彎曲板狀。藉由使遮蔽構件36B較供給噴嘴33B於主輥12之周向之兩側延伸,而使噴附處理空間3B較供給噴嘴33B於主輥12之周向之兩側延長。供給噴嘴33B之噴出口33e貫通遮蔽構件36B而與噴附處理空間3B相連。來自汽化器31B之反應氣體經由供給通路32B而送至供給噴嘴33B,並自該噴嘴33B之噴 出口33e噴出至噴附處理空間3B。 The supply nozzle 33B of the subsequent stage is disposed between the plasma processing space 4A of the previous stage in the transport path 19 and the plasma processing space 4B of the subsequent stage. Specifically, the supply nozzle 33B is disposed above the main roller 12. The lower surface of the supply nozzle 33B faces the peripheral surface of the upper side of the main roll 12, and is further opposed to the surface of the processed film 9 on the main roll 12. A subsequent processing space 3B is formed between the lower surface of the supply nozzle 33B and the peripheral surface of the upper side of the main roller 12. The film to be processed 9 passes through the inside of the processing space 3B. A shielding member 36B is attached to the lower surface of the supply nozzle 33B. The shield member 36B has a circular arc-shaped cross section as viewed in the w direction, and has a curved plate shape extending in the w direction. By causing the shielding member 36B to extend on both sides of the circumferential direction of the main roller 12 from the supply nozzle 33B, the ejection processing space 3B is extended from the supply nozzle 33B on both sides in the circumferential direction of the main roller 12. The discharge port 33e of the supply nozzle 33B passes through the shield member 36B and is connected to the spray processing space 3B. The reaction gas from the vaporizer 31B is sent to the supply nozzle 33B via the supply passage 32B, and is sprayed from the nozzle 33B. The outlet 33e is ejected to the spray processing space 3B.

雖省略圖示,但於各供給噴嘴33之內部設置有使來自供給通路32之反應氣體均勻分散於w方向上之整流部。藉此,反應氣體之噴出氣流成為均勻分佈於w方向上之氣流。又,於各供給噴嘴33之內部設置有水等調溫介質流動之調溫通路(反應氣體調溫機構)。藉此,可對供給噴嘴33進行調溫,進而可調節通過供給噴嘴33內之反應氣體之溫度。供給噴嘴33之設定溫度較佳為反應氣體中之丙烯酸之凝縮溫度以上。藉此,可防止丙烯酸於供給噴嘴33內凝縮。 Although not shown in the drawings, a rectifying portion that uniformly disperses the reaction gas from the supply passage 32 in the w direction is provided inside each of the supply nozzles 33. Thereby, the discharge gas of the reaction gas becomes a gas flow uniformly distributed in the w direction. Further, a temperature control passage (reaction gas temperature adjustment mechanism) through which the temperature control medium such as water flows is provided inside each supply nozzle 33. Thereby, the supply nozzle 33 can be tempered, and the temperature of the reaction gas passing through the supply nozzle 33 can be adjusted. The set temperature of the supply nozzle 33 is preferably equal to or higher than the condensation temperature of the acrylic acid in the reaction gas. Thereby, it is possible to prevent the acrylic acid from being condensed in the supply nozzle 33.

於反應氣體供給系統30之中途部連接有反應氣體排出系統40。反應氣體排出系統40具有對應於供給系統30之前段及後段之各管線的2個排氣通路42。前段之排氣通路42A經由供給通路32A上之連接部41A而與供給通路32A相連接。後段之排氣通路42B經由供給通路32B上之連接部41B而與供給通路32B相連接。 A reaction gas discharge system 40 is connected to the middle of the reaction gas supply system 30. The reaction gas discharge system 40 has two exhaust passages 42 corresponding to the respective lines of the front and rear sections of the supply system 30. The exhaust passage 42A in the front stage is connected to the supply passage 32A via the connection portion 41A on the supply passage 32A. The exhaust passage 42B in the subsequent stage is connected to the supply passage 32B via the connection portion 41B on the supply passage 32B.

於前段及後段之各供給通路32上,隔著連接部41而於上游側(汽化器31側)設置有開閉閥51,於下游側(供給噴嘴33側)設置有開閉閥52。於前段及後段之各排氣通路42上設置有開閉閥53。各開閉閥51~53係由電磁開閉閥構成。藉由該等開閉閥51~53之開閉操作,膜表面處理裝置1之動作模式切換為反應氣體噴出模式及排氣模式。於反應氣體噴出模式中,汽化器31連接於供給噴嘴33上,反應氣體自汽化器31經由供給通路32而自供給噴嘴33噴出。於排氣模式 中,汽化器31連接於排氣通路42上,反應氣體自汽化器31經由供給通路32之至連接部41為止之部分而導入排氣通路42中並排出。 In each of the supply passages 32 of the front stage and the rear stage, an opening and closing valve 51 is provided on the upstream side (the vaporizer 31 side) via the connection portion 41, and an opening and closing valve 52 is provided on the downstream side (the supply nozzle 33 side). An opening and closing valve 53 is provided in each of the exhaust passages 42 in the front and rear stages. Each of the opening and closing valves 51 to 53 is constituted by an electromagnetic opening and closing valve. By the opening and closing operations of the on-off valves 51 to 53, the operation mode of the film surface treatment apparatus 1 is switched to the reaction gas discharge mode and the exhaust mode. In the reaction gas discharge mode, the vaporizer 31 is connected to the supply nozzle 33, and the reaction gas is ejected from the supply nozzle 33 from the vaporizer 31 via the supply passage 32. In exhaust mode The vaporizer 31 is connected to the exhaust passage 42 and the reaction gas is introduced into the exhaust passage 42 from the vaporizer 31 via the supply passage 32 to the connection portion 41 and is discharged.

再者,連接部41較佳為位於反應氣體供給系統30中之較開閉閥52之上游側之部分上。且較佳為將連接部41及開閉閥52設置於供給噴嘴33之附近。 Further, the connecting portion 41 is preferably located on a portion of the reaction gas supply system 30 on the upstream side of the opening and closing valve 52. Preferably, the connecting portion 41 and the opening and closing valve 52 are provided in the vicinity of the supply nozzle 33.

亦可於連接部41上設置1個三向閥來代替3個開閉閥51~53。 Instead of the three opening and closing valves 51 to 53, a three-way valve may be provided in the connecting portion 41.

2個排氣通路42A、42B相互合流而連接於除害裝置43上。除害裝置43例如由鹼洗滌器構成,且進行自排出氣體去除丙烯酸等除害操作。亦可與對處理槽C之內部環境進行排氣之排氣系統(未圖示)之除害裝置共用除害裝置43。亦可於反應氣體排出系統40中設置丙烯酸之回收裝置,回收丙烯酸並送回汽化器31中。 The two exhaust passages 42A and 42B are joined to each other and connected to the detoxification device 43. The detoxification device 43 is constituted, for example, by an alkali scrubber, and performs a decontamination operation such as removal of acrylic acid from the exhaust gas. The detoxification device 43 may be shared with the detoxification device of the exhaust system (not shown) that exhausts the internal environment of the treatment tank C. An acrylic acid recovery device may be disposed in the reaction gas discharge system 40 to recover the acrylic acid and return it to the vaporizer 31.

進而,膜表面處理裝置1包括控制機構8。控制機構8包含微電腦、驅動電路、信號轉換電路等。微電腦控制膜表面處理裝置1之動作。驅動電路基於微電腦之指令而驅動電源2、旋轉機構15、電磁開閉閥51~55等。 Further, the film surface treatment apparatus 1 includes a control mechanism 8. The control mechanism 8 includes a microcomputer, a drive circuit, a signal conversion circuit, and the like. The microcomputer controls the action of the film surface treatment apparatus 1. The drive circuit drives the power source 2, the rotating mechanism 15, the electromagnetic opening and closing valves 51 to 55, and the like based on an instruction from the microcomputer.

以表面處理之開始動作為中心,依據圖3之時序圖說明藉由上述膜表面處理裝置1對被處理膜9進行表面處理之方法。 The method of surface-treating the film to be processed 9 by the film surface processing apparatus 1 is demonstrated based on the timing chart of FIG. 3 centering on the start operation of a surface process.

目前,設為膜表面處理裝置1之運轉停止(包括由某些故障等導致之暫時停止)。此時,電源2及旋轉機構15停止。因此,未進行電漿處理空間4內之電漿放電,且未進行被 處理膜9之搬送。又,開閉閥51~55關閉。因此,未進行對處理空間3、4之氣體供給。於開始膜表面處理裝置1之運轉(包含故障等之恢復後之再次開始)時,首先進行反應氣體排出步驟。其後,依序開始搬送步驟及電漿照射步驟。繼而進行自上述反應氣體排出步驟向反應氣體噴附步驟之切換。以下進行詳細說明。 At present, it is assumed that the operation of the film surface treatment apparatus 1 is stopped (including temporary suspension due to some malfunction or the like). At this time, the power source 2 and the rotating mechanism 15 are stopped. Therefore, the plasma discharge in the plasma processing space 4 is not performed, and the plasma discharge is not performed. The handling of the film 9 is carried out. Further, the opening and closing valves 51 to 55 are closed. Therefore, the supply of gas to the processing spaces 3, 4 is not performed. When the operation of the membrane surface treatment apparatus 1 is started (including the restart after the recovery of the failure or the like), the reaction gas discharge step is first performed. Thereafter, the transfer step and the plasma irradiation step are sequentially started. The switching from the reaction gas discharge step to the reaction gas spray step is then carried out. The details are described below.

(1)反應氣體排出步驟 (1) Reaction gas discharge step

首先,藉由控制機構8打開供給系統30及排氣系統40之前段及後段之各管線之開閉閥51,關閉開閉閥52,並打開開閉閥53。藉此,供給系統30及排氣系統40成為排氣模式,自汽化器31遮斷供給噴嘴33,且排氣通路42與汽化器31連通。進而,打開開閉閥55。藉此,特定流量之載氣(N2)自載氣源34經由導入通路35導入汽化器31中。汽化器31內之丙烯酸(AA)汽化而與該載氣(N2)混合,生成反應氣體(AA+N2)。將該反應氣體自汽化器31送至供給通路32中。反應氣體流至連接部41後,不自此處前往供給噴嘴33而被導至排氣通路42並排出。因此,不會自供給噴嘴33噴出反應氣體,且丙烯酸單體不會附著於被處理膜9上。 First, the opening and closing valve 51 of each of the lines of the supply system 30 and the exhaust system 40 in the front and rear stages is opened by the control unit 8, the opening and closing valve 52 is closed, and the opening and closing valve 53 is opened. Thereby, the supply system 30 and the exhaust system 40 are in the exhaust mode, the supply nozzle 33 is blocked from the vaporizer 31, and the exhaust passage 42 communicates with the vaporizer 31. Further, the on-off valve 55 is opened. Thereby, the carrier gas (N 2 ) of a specific flow rate is introduced into the vaporizer 31 from the carrier gas source 34 via the introduction passage 35. The acrylic acid (AA) in the vaporizer 31 is vaporized and mixed with the carrier gas (N 2 ) to form a reaction gas (AA+N 2 ). This reaction gas is sent from the vaporizer 31 to the supply passage 32. After the reaction gas flows to the connection portion 41, it does not proceed to the supply nozzle 33 from here, but is guided to the exhaust passage 42 and discharged. Therefore, the reaction gas is not ejected from the supply nozzle 33, and the acrylic monomer does not adhere to the film to be processed 9.

於開始自汽化器31送出反應氣體最初,通常反應氣體中之丙烯酸濃度不穩定而偏離所期望之設定濃度。詳細而言,於汽化器31內之丙烯酸汽化時,必需汽化潛熱。因此,汽化器31內之溫度於載氣(N2)之導入開始(汽化開始)後立刻暫時降低。於是,藉由汽化器31之溫度調節機構運轉,而使汽化器31內之溫度緩慢向設定溫度恢復。於該汽 化器31之溫度變動之期間中,丙烯酸之汽化量不穩定,反應氣體中之丙烯酸濃度不穩定。又,於反應氣體供給通路32(於該階段中為自汽化器31起至連接部41之通路部分)中,亦因產生丙烯酸之吸附或汽化而自反應氣體之供給開始起直至上述吸附及汽化成為平衡狀態為止之期間,丙烯酸濃度變得不穩定。隨著時間經過,反應氣體中之丙烯酸濃度漸漸穩定化而接近設定濃度。直至丙烯酸濃度穩定為止之所需時間(穩定化期間)例如為數分鐘~十數分鐘左右。持續反應氣體排出步驟直至經過對應於該穩定化期間之時間T1。時間T1係預先於數分鐘~十數分鐘之範圍內決定而儲存於控制機構8記憶部中。具體而言,時間T1通常較佳為2分鐘~15分鐘。或者,亦可利用濃度感測器檢測反應氣體中之丙烯酸濃度,並基於該檢測濃度判斷丙烯酸濃度是否穩定,藉此從結果上判斷是否經過穩定化期間(即所需時間T1)。 At the beginning of the delivery of the reaction gas from the vaporizer 31, typically the concentration of acrylic acid in the reaction gas is unstable and deviates from the desired set concentration. In detail, when the acrylic acid in the vaporizer 31 is vaporized, it is necessary to vaporize latent heat. Therefore, the temperature in the vaporizer 31 is temporarily lowered immediately after the introduction of the carrier gas (N 2 ) (initiation of vaporization). Then, by operating the temperature adjusting mechanism of the vaporizer 31, the temperature in the vaporizer 31 is slowly recovered to the set temperature. During the temperature fluctuation of the vaporizer 31, the vaporization amount of acrylic acid is unstable, and the acrylic acid concentration in the reaction gas is unstable. Further, in the reaction gas supply passage 32 (in the passage from the vaporizer 31 to the connection portion 41 in this stage), the adsorption and vaporization of the acrylic acid are also caused from the start of the supply of the reaction gas until the adsorption and vaporization become The acrylic acid concentration became unstable during the equilibrium state. As time passes, the concentration of acrylic acid in the reaction gas gradually stabilizes to approach the set concentration. The time (stabilization period) until the concentration of the acrylic acid is stabilized is, for example, about several minutes to several ten minutes. The reaction gas discharge step is continued until the time T 1 corresponding to the stabilization period elapses. The time T 1 is determined in advance within a range of several minutes to ten minutes and stored in the memory unit of the control unit 8. Specifically, the time T 1 is usually preferably from 2 minutes to 15 minutes. Alternatively, the concentration of the acrylic acid in the reaction gas may be detected by a concentration sensor, and based on the detected concentration, whether or not the concentration of the acrylic acid is stable may be determined, thereby judging from the result whether or not the stabilization period (i.e., the required time T 1 ) has elapsed.

於反應氣體排出步驟之期間中不進行被處理膜9之搬送。因此,可避免被處理膜9之損耗。 The conveyance of the film 9 to be processed is not performed during the reaction gas discharge step. Therefore, the loss of the film to be processed 9 can be avoided.

(2)搬送步驟之開始 (2) The beginning of the transfer step

經過時間T1後,驅動旋轉機構15而使主輥11、12、13旋轉,開始被處理膜9之搬送。 After the time T 1, 12, 13 drive the rotation of the rotary mechanism 15 through the main roll, the film 9 is started to be processed conveyed.

(3)電漿照射步驟之開始 (3) The beginning of the plasma irradiation step

繼而,打開放電氣體供給系統20之前段及後段之各管線之開閉閥54,將放電氣體供給系統20之放電氣體(N2)自放電氣體噴嘴23供給至電漿處理空間4。並且,驅動電源2, 對輥電極12供給高頻電力而於空間4內生成電漿放電。藉此,放電氣體(N2)電漿化(包括激發、分解、活化、自由基化、離子化),該電漿化之放電氣體接觸於電漿處理空間4內之被處理膜9。即,對被處理膜9照射氮電漿。於該電漿照射之開始前,預先開始被處理膜9之搬送,藉此,可避免對被處理膜9之特定部位連續照射電漿。因此,可避免上述特定部位受到較大之熱損害,可防止被處理膜9於上述特定部位斷裂。將自搬送步驟之開始起至電漿照射步驟之開始為止之時間T2例如設為直至被處理膜9之搬送速度成為向設定速度提昇之中途之某速度為止的時間。再者,時間T2並不限定於直至成為上述某速度為止之時間,亦可為直至到達上述設定速度之時間,或可為自此外之指標得出之時間。時間T2例如較佳為設為數秒左右,具體而言,時間T2較佳為設為2~5秒左右。 Then, the opening and closing valve 54 of each line in the front stage and the rear stage of the discharge gas supply system 20 is opened, and the discharge gas (N 2 ) of the discharge gas supply system 20 is supplied from the discharge gas nozzle 23 to the plasma processing space 4. Further, the power source 2 is driven to supply high-frequency power to the roller electrode 12 to generate a plasma discharge in the space 4. Thereby, the discharge gas (N 2 ) is plasma (including excitation, decomposition, activation, radicalization, ionization), and the plasma discharge gas contacts the film 9 to be processed in the plasma processing space 4. That is, the film to be treated 9 is irradiated with nitrogen plasma. Before the start of the plasma irradiation, the conveyance of the film to be processed 9 is started in advance, whereby the continuous irradiation of the specific portion of the film to be processed 9 can be avoided. Therefore, it is possible to prevent the specific portion from being subjected to a large thermal damage, and it is possible to prevent the treated film 9 from being broken at the specific portion. The time T 2 from the start of the transfer step to the start of the plasma irradiation step is, for example, a time until the transfer speed of the processed film 9 becomes a certain speed in the middle of the set speed increase. Further, the time T 2 is not limited to the time until the certain speed is reached, and may be the time until the set speed is reached, or may be the time derived from the other index. The time T 2 is preferably set to, for example, several seconds. Specifically, the time T 2 is preferably set to about 2 to 5 seconds.

再者,打開開閉閥54而開始將放電氣體供給至電漿處理空間4之時序可設定為藉由開始自電源2供給電力而開始電漿照射時之前,亦可設定於被處理膜9之搬送開始之前後,進而亦可設定於用於上述反應氣體之穩定化之時間T1之經過中。 Further, the timing at which the opening and closing valve 54 is opened to start the supply of the discharge gas to the plasma processing space 4 can be set to be carried out before the plasma irradiation is started by starting the supply of electric power from the power source 2, and can also be set to be transported by the processed film 9. After the start, it may be set in the passage of the time T 1 for the stabilization of the reaction gas.

(4)反應氣體噴附步驟之開始 (4) The beginning of the reaction gas spraying step

繼而,關於反應氣體供給系統30之前段及後段之各管線,於打開開閉閥51之狀態下打開開閉閥52,且關閉開閉閥53。藉此,自排氣模式切換為反應氣體噴出模式,排氣通路42關閉,且汽化器31與供給噴嘴33連通。因此,停止 自排氣通路42排出反應氣體(反應氣體排出步驟之結束)。並且,將來自汽化器31之反應氣體通過供給通路32送至供給噴嘴33,並自噴出口33e噴出至噴附處理空間3。該反應氣體中之丙烯酸於噴附處理空間3內之被處理膜9上凝縮而膜狀地附著於被處理膜9之表面上。伴隨著被處理膜9之搬送,上述附著丙烯酸之部分導入電漿處理空間4中,且經電漿照射。藉此,於電漿處理空間4內之被處理膜9之表面上產生丙烯酸之電漿聚合反應,可於被處理膜9之表面形成包含丙烯酸之電漿聚合膜之接著性促進層。 Then, with respect to each of the lines in the front stage and the rear stage of the reaction gas supply system 30, the opening and closing valve 52 is opened in a state where the opening and closing valve 51 is opened, and the opening and closing valve 53 is closed. Thereby, the self-exhaust mode is switched to the reaction gas discharge mode, the exhaust passage 42 is closed, and the vaporizer 31 is in communication with the supply nozzle 33. Therefore, stop The reaction gas is discharged from the exhaust passage 42 (the end of the reaction gas discharge step). Then, the reaction gas from the vaporizer 31 is sent to the supply nozzle 33 through the supply passage 32, and is discharged from the discharge port 33e to the spray processing space 3. The acrylic acid in the reaction gas is condensed on the film to be treated 9 in the spray processing space 3 and adhered to the surface of the film to be processed 9 in a film form. With the conveyance of the film to be processed 9, the portion to which the acrylic acid adheres is introduced into the plasma processing space 4, and is irradiated with plasma. Thereby, a plasma polymerization reaction of acrylic acid is generated on the surface of the film 9 to be processed in the plasma processing space 4, and an adhesion promoting layer containing a plasma polymer film of acrylic acid can be formed on the surface of the film to be processed 9.

藉由預先利用反應氣體排出步驟使反應氣體中之丙烯酸濃度穩定化,可自開始對膜9噴附反應氣體最初起便穩定地形成丙烯酸之電漿聚合膜。因此,可防止或抑制被處理膜9之搬送方向之前端部分之處理狀態變得不穩定,可防止形成此種處理狀態不穩定之膜部分,或可充分縮短上述處理狀態不穩定之膜部分之長度。藉此,可防止或抑制被處理膜9之損耗。並不限定於通常之運轉開始時,於由於某些故障等而暫時停止後之再次開始時,亦可藉由採用上述開始順序而防止或抑制被處理膜9之損耗。 By stabilizing the concentration of the acrylic acid in the reaction gas by the reaction gas discharge step in advance, the plasma polymerization film of acrylic acid can be stably formed from the start of the reaction of the reaction gas on the film 9. Therefore, it is possible to prevent or suppress the treatment state of the end portion before the conveyance direction of the film to be treated from becoming unstable, to prevent the film portion which is unstable in such a treatment state from being formed, or to sufficiently shorten the film portion which is unstable in the above-described treatment state. length. Thereby, the loss of the film to be processed 9 can be prevented or suppressed. It is not limited to the normal start of the operation, and the resumption of the film to be processed 9 can be prevented or suppressed by using the above-described starting sequence when the operation is resumed after the temporary stop due to some failure or the like.

進而,於開始對被處理膜9噴附反應氣體之前,預先開始電漿照射,藉此,可自反應氣體之噴出開始最初起便確實地產生丙烯酸之電漿聚合反應。因此,可防止丙烯酸以單體之形式直接殘留於被處理膜9上,並可防止上述殘留單體轉移至較噴附處理空間3下游之搬送路徑19上之裝置構件或周邊構件。進而,可防止上述殘留單體轉移至該表 面處理之後續步驟中使用之設備。其結果,可防止由上述轉移而導致之良率之降低。尤其是可防止上述殘留單體轉移至反轉輥14上而作為污垢附著,進而可確實地防止被處理膜9接觸於上述反轉輥14時被污染而降低良率。 Further, before the start of spraying the reaction gas on the film to be processed 9, the plasma irradiation is started in advance, whereby the plasma polymerization reaction of acrylic acid can be surely generated from the beginning of the discharge of the reaction gas. Therefore, it is possible to prevent the acrylic acid from remaining directly on the film to be treated 9 as a monomer, and to prevent the residual monomer from being transferred to the device member or the peripheral member on the conveying path 19 downstream of the ejection processing space 3. Further, the above residual monomer can be prevented from being transferred to the table The device used in the subsequent steps of the surface processing. As a result, it is possible to prevent a decrease in the yield due to the above transition. In particular, it is possible to prevent the residual monomer from being transferred to the reversing roller 14 and adhering as dirt, and it is possible to surely prevent contamination of the film to be treated 9 when it comes into contact with the reversing roller 14, thereby reducing the yield.

自電漿照射步驟開始時起至反應氣體噴附步驟開始時之時間T3較佳為儘量短,例如為數秒,更佳設為5秒以內。因此,被處理膜9之搬送開始後至自供給噴嘴33之噴出開始之時間為數秒至十數秒。藉由縮短時間T3,可進一步確實地防止或抑制被處理膜9之損耗。 The time T 3 from the start of the plasma irradiation step to the start of the reaction gas spraying step is preferably as short as possible, for example, several seconds, more preferably within 5 seconds. Therefore, the time from the start of the conveyance of the film to be processed 9 to the start of the discharge from the supply nozzle 33 is several seconds to ten seconds. By shortening the time T 3 , the loss of the film to be processed 9 can be further reliably prevented or suppressed.

再者,打開開閉閥52之時序較佳為考慮反應氣體自連接部41或開閉閥52到達供給噴嘴33而噴出為止之時間T4(自連接部41或開閉閥52以反應氣體置換供給噴嘴33側之供給通路32及供給噴嘴33內之氣體之置換時間)而設定。即,打開開閉閥52之時序較佳為僅較反應氣體噴附之開始時早置換時間T4而進行。置換時間T4雖亦取決於供給通路32之長度等,但通常為數秒左右,最大為10秒左右。因此,如圖3所示,於T4<T3之情形時,較佳為於剛開始自電源2供給電力後打開開閉閥52。於T4≒T3之情形時,較佳為與自電源2供給電力大致同時地打開開閉閥52。於T4>T3之情形時,較佳為於開始自電源2供給電力前打開開閉閥52。為了防止轉印,最佳為T4<T3In addition, it is preferable that the timing of opening the on-off valve 52 is the time T 4 until the reaction gas is ejected from the connection portion 41 or the on-off valve 52 to the supply nozzle 33 (the supply nozzle 33 is replaced by the reaction gas from the connection portion 41 or the on-off valve 52). It is set in the supply passage 32 on the side and the replacement time of the gas in the supply nozzle 33). That is, the timing of opening the on-off valve 52 is preferably performed only at a time T 4 earlier than the start of the reaction gas injection. The replacement time T 4 depends on the length of the supply passage 32, etc., but is usually about several seconds and is about 10 seconds at the maximum. Therefore, as shown at T 4 <T 3 when the case, preferably the electric power is supplied from the power supply 2 to the beginning of opening and closing valve 523 is opened. In the case of T 4 ≒T 3 , it is preferable to open the on-off valve 52 substantially simultaneously with the supply of electric power from the power source 2 . In the case of T 4 > T 3 , it is preferable to open the on-off valve 52 before starting to supply electric power from the power source 2 . In order to prevent transfer, it is preferably T 4 <T 3 .

(5)固定處理步驟 (5) fixed processing steps

其後,繼續搬送步驟、電漿照射步驟、及反應氣體噴附步驟。根據膜表面處理裝置1,藉由沿搬送路徑19搬送被 處理膜9,而依序進行前段之噴附處理空間3A中之反應氣體噴附、前段之電漿處理空間4A中之電漿照射、後段之噴附處理空間3B中之反應氣體噴附、及後段之電漿處理空間4B中之電漿照射。藉由前段之反應氣體噴附及電漿照射,可於被處理膜9之表面形成包含丙烯酸電漿聚合膜之第1接著性促進層。繼而,藉由後段之反應氣體噴附及電漿照射,可於上述第1接著性促進層上進而積層包含丙烯酸電漿聚合膜之第2接著性促進層。藉此,可增大接著性促進層之整體厚度,可進一步提昇被處理膜9之接著性。 Thereafter, the carrying step, the plasma irradiation step, and the reaction gas spraying step are continued. According to the film surface treatment apparatus 1, the conveyance is carried along the conveyance path 19 The membrane 9 is processed, and the reaction gas spray in the spray processing space 3A in the preceding stage, the plasma irradiation in the plasma processing space 4A in the preceding stage, the reaction gas spray in the spray processing space 3B in the subsequent stage, and The plasma in the plasma treatment space 4B of the latter stage is irradiated. The first adhesion promoting layer containing the acrylic plasma polymer film can be formed on the surface of the film to be processed 9 by the reaction gas spraying in the preceding stage and the plasma irradiation. Then, the second adhesion promoting layer containing the acrylic plasma polymerized film can be further laminated on the first adhesion promoting layer by the reaction gas spraying in the subsequent stage and the plasma irradiation. Thereby, the overall thickness of the adhesion promoting layer can be increased, and the adhesion of the film to be processed 9 can be further improved.

本發明並不限定於上述實施形態,可於不偏離其主旨之範圍內採用各種改變態樣。 The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

例如,於實施形態中,雖以相互相同之時序對前段之開閉閥52A與後段之開閉閥52B進行開閉操作,但亦可使開閉閥52A、52B之開閉時序於時間上一前一後。例如,亦可於反應氣體噴附步驟中,打開開閉閥52A後,打開開閉閥52B。關於其他開閉閥51、53~55亦相同,於實施形態中,雖以相互相同之時序開閉前段之開閉閥與後段之開閉閥,但亦可使時序於時間上一前一後。 For example, in the embodiment, the opening and closing valve 52A of the front stage and the opening and closing valve 52B of the subsequent stage are opened and closed at the same timing, but the opening and closing timing of the opening and closing valves 52A and 52B may be timed up and down. For example, in the reaction gas spraying step, the opening and closing valve 52A may be opened after the opening and closing valve 52A is opened. The other on-off valves 51 and 53 to 55 are also the same. In the embodiment, the opening and closing valves of the front stage and the opening and closing valves of the subsequent stage are opened and closed at the same timing. However, the timing can be made one after the other.

開始對被處理膜9照射電漿之時序只要於僅持續時間T1進行反應氣體排出步驟後即可,可與被處理膜9之搬送開始時序同時,若該等開始時序之間隔較短,則電漿照射開始時序亦可先於搬送開始時序。 The timing of starting the irradiation of the plasma on the film to be processed 9 may be performed after the reaction gas discharge step is performed only for the duration T 1 , and may be simultaneously with the transfer start timing of the film to be processed 9 , and if the intervals of the start timings are short, The plasma irradiation start timing may also precede the transfer start timing.

自供給噴嘴33噴出反應氣體之時序只要於僅持續時間T1進行反應氣體排出步驟後即可,可與被處理膜9之搬送開 始時序或電漿照射開始時序同時,若該等開始時序之間隔較短,則反應氣體之噴出時序亦可先於搬送開始時序或電漿照射開始時序。 Can be treated with the film 9 of the conveyance start timing simultaneously or plasma irradiation start timing of the supply nozzle 33 is ejected from the timing of the reaction gas to the reaction gas only as long as the duration T 1 discharge step, the timing of the beginning of the interval if such When it is short, the discharge timing of the reaction gas may be preceded by the transfer start timing or the plasma irradiation start timing.

反應氣體排出系統40之連接部41如上所述,較佳為較開閉閥52位於反應氣體供給系統30之上游側上,並且將連接部41及開閉閥52設置於供給噴嘴33之附近,但未必限定於此,連接部41亦可設置於反應氣體供給系統30中之自汽化器31至噴出口33e之部分且較開閉閥52上游側之部分上。 As described above, the connection portion 41 of the reaction gas discharge system 40 is preferably located on the upstream side of the reaction gas supply system 30 with respect to the opening and closing valve 52, and the connection portion 41 and the opening and closing valve 52 are provided in the vicinity of the supply nozzle 33, but may not necessarily be provided. The connection portion 41 may be provided in a portion of the reaction gas supply system 30 from the vaporizer 31 to the discharge port 33e and on the upstream side of the opening and closing valve 52.

排氣通路42並不限定於連接於供給通路32之中途部上,可直接連接於汽化器31上,亦可自供給噴嘴33內之反應氣體通路分支。 The exhaust passage 42 is not limited to being connected to the middle of the supply passage 32, and may be directly connected to the vaporizer 31 or branched from the reaction gas passage in the supply nozzle 33.

主輥(輥電極)11、12...之數並不限定於3個,可為2個,亦可為4個以上。 The number of the main rolls (roll electrodes) 11, 12, ... is not limited to three, and may be two or four or more.

氣體供給系統20、30之管線數並不限定於前段及後段2個,可僅為1個,亦可為3個以上。 The number of lines of the gas supply systems 20 and 30 is not limited to two in the front stage and the rear stage, and may be one or three or more.

電漿生成部之電極結構並不限定於一對輥電極結構,亦可為平行板電極。 The electrode structure of the plasma generating portion is not limited to a pair of roller electrode structures, and may be a parallel plate electrode.

被處理膜9之支持搬送機構亦可與平行板電極等電極結構分開設置。支持搬送機構亦可具有與電極分開之導輥、捲出輥、捲取輥。支持搬送機構亦可具有操作器或懸浮台等。 The support transport mechanism of the film to be processed 9 may be provided separately from the electrode structure such as a parallel plate electrode. The support transport mechanism may also have a guide roller, a take-up roller, and a take-up roller that are separated from the electrodes. The support transport mechanism may also have an operator or a floating platform.

亦可將反應氣體直接供給於電漿處理空間4。於該情形時,反應氣體之載氣亦可兼為放電氣體。 The reaction gas can also be directly supplied to the plasma processing space 4. In this case, the carrier gas of the reaction gas may also serve as a discharge gas.

聚合性單體並不限定於丙烯酸,亦可為甲基丙烯酸、伊 康酸、順丁烯二酸等。載氣並不限定於氮氣(N2),亦可為Ar、He等稀有氣體或其他惰性氣體。 The polymerizable monomer is not limited to acrylic acid, and may be methacrylic acid, itaconic acid, maleic acid or the like. The carrier gas is not limited to nitrogen (N 2 ), and may be a rare gas such as Ar or He or another inert gas.

本發明並不限定於偏光板用保護膜之表面處理,可應用於在各種樹脂膜上形成聚合性單體之聚合膜之處理。 The present invention is not limited to the surface treatment of the protective film for a polarizing plate, and can be applied to a treatment of forming a polymer film of a polymerizable monomer on various resin films.

[實施例1] [Example 1]

雖對實施例進行說明,但本發明並不限定於以下實施例。 Although the examples are described, the present invention is not limited to the following examples.

使用與圖1所示之膜表面處理裝置1實質上相同結構之裝置,進行被處理膜9之表面處理。作為被處理膜9,使用TAC膜。膜9之w方向之寬度為330 mm。 The surface treatment of the film to be processed 9 is performed using a device having substantially the same structure as that of the film surface treating apparatus 1 shown in Fig. 1. As the film to be processed 9, a TAC film was used. The width of the film 9 in the w direction is 330 mm.

1)反應氣體排出步驟 1) Reaction gas discharge step

首先,將反應氣體供給系統30及排氣系統40之前段及後段之各管線設為排氣模式,將汽化器31之反應氣體導至排氣通路42中並排出。 First, the respective lines of the reaction gas supply system 30 and the exhaust system 40 in the front stage and the rear stage are set to the exhaust mode, and the reaction gas of the vaporizer 31 is led to the exhaust passage 42 and discharged.

使用丙烯酸(AA)作為反應氣體中之聚合性單體,使用氮氣(N2)作為載氣。 Acrylic acid (AA) was used as the polymerizable monomer in the reaction gas, and nitrogen (N 2 ) was used as the carrier gas.

載氣流量於前段管線及後段管線中均為40 slm。 The carrier gas flow rate is 40 slm in both the front and rear pipelines.

汽化器31A、31B之設定溫度均為140℃。 The set temperatures of the vaporizers 31A, 31B were both 140 °C.

將反應氣體中之丙烯酸之設定流量於前段管線及後段管線中均設為7.5 g/min。 The set flow rate of the acrylic acid in the reaction gas was set to 7.5 g/min in both the front stage line and the rear stage line.

將用於反應氣體中之丙烯酸濃度之穩定化之時間T1設為T1=5 min。即,進行上述反應氣體排出5分鐘。其間,不進行主輥11~13之旋轉,且不進行自電源2之電力供給。 The time T 1 for stabilizing the concentration of the acrylic acid in the reaction gas was set to T 1 = 5 min. That is, the above reaction gas was discharged for 5 minutes. In the meantime, the rotation of the main rolls 11 to 13 is not performed, and the power supply from the power source 2 is not performed.

排出氣體係利用鹼洗滌器43進行除害。 The vent gas system is detoxified using an alkali scrubber 43.

2)搬送步驟 2) Transfer step

自上述反應氣體排出開始起經過5分鐘時,開始主輥11、12、13之旋轉,並開始被處理膜9之搬送。將被處理膜9之設定搬送速度設為30 m/min。 When the elapse of 5 minutes from the start of the discharge of the reaction gas, the rotation of the main rolls 11, 12, and 13 is started, and the conveyance of the film 9 to be processed is started. The set conveyance speed of the film to be processed 9 was set to 30 m/min.

將主輥11~13之設定溫度(被處理膜9之溫度)設為40℃。 The set temperatures of the main rolls 11 to 13 (the temperature of the film to be processed 9) were set to 40 °C.

3)電漿照射步驟 3) Plasma irradiation step

被處理膜9之搬送開始後,於其搬送速度達到10 m/min之時間點上,開始自電源2供給電力,進行電漿處理空間4內之電漿照射。即,於電漿處理空間4內將放電氣體電漿化並使其接觸於處理膜9。 After the conveyance of the film to be processed 9 is started, electric power is supplied from the power source 2 at the time when the conveyance speed reaches 10 m/min, and plasma irradiation in the plasma processing space 4 is performed. That is, the discharge gas is plasma-treated in the plasma processing space 4 and brought into contact with the treatment film 9.

自被處理膜9之搬送開始起至電漿照射開始為止之時間T2為3秒左右。 The time T 2 from the start of the conveyance of the film 9 to the start of the plasma irradiation is about 3 seconds.

供給電力以交流轉換前之直流計為3015 W(450 V×6.7 A)。 The power supply is 3015 W (450 V × 6.7 A) for the DC before AC conversion.

輥電極間之施加電壓於前段之電極11、12間及後段之電極12、13間均為Vpp=18.1 kV。 The applied voltage between the roller electrodes was Vpp = 18.1 kV between the electrodes 11 and 12 in the front stage and the electrodes 12 and 13 in the rear stage.

使用氮氣(N2)作為放電氣體。放電氣體(N2)之流量於前段管線及後段管線中均為20 slm。 Nitrogen (N 2 ) was used as the discharge gas. The discharge gas (N 2 ) flow rate is 20 slm in both the front line and the rear line.

放電氣體噴嘴23A、23B之設定溫度均為40℃。 The set temperatures of the discharge gas nozzles 23A and 23B were both 40 °C.

4)反應氣體噴附步驟 4) Reaction gas spraying step

繼而,關於前段及後段之各管線,一面自排氣模式切換至反應氣體噴附模式而停止自排氣通路42排出反應氣體,一面自供給噴嘴33噴出反應氣體。 Then, the respective lines in the front stage and the rear stage are switched from the exhaust mode to the reaction gas injection mode, and the reaction gas is discharged from the exhaust passage 42 to eject the reaction gas from the supply nozzle 33.

自上述電漿照射之開始起至上述反應氣體之噴出開始為 止之時間T3為5秒左右。 The time T 3 from the start of the plasma irradiation to the start of the discharge of the reaction gas is about 5 seconds.

將供給噴嘴33A、33B之設定溫度(反應氣體之噴出溫度)均設為75℃。 The set temperatures (discharge temperatures of the reaction gases) of the supply nozzles 33A and 33B were all set to 75 °C.

5)評價1 5) Evaluation 1

將表面處理後之TAC膜9中之在上述反應氣體之噴附開始時位於噴附處理空間3A內的部分設為處理開始部位,自該處理開始部位向搬送方向之下游側,分別自複數個相隔特定距離之部位收取膜片。上述特定距離為30 m、60 m、90 m、120 m、150 m、180 m6種。30 m之部位係於自上述反應氣體之噴附開始起經過1分鐘之時間點上位於噴附處理空間3A內的膜部分。60 m之部位係於自上述反應氣體之噴附開始起經過2分鐘之時間點上位於噴附處理空間3A內的膜部分。90 m之部位係於自上述反應氣體之噴附開始起經過3分鐘之時間點上位於噴附處理空間3A內的膜部分。120 m之部位係於自上述反應氣體之噴附開始起經過4分鐘之時間點上位於噴附處理空間3A內的膜部分。150 m之部位係於自上述反應氣體之噴附開始起經過5分鐘之時間點上位於噴附處理空間3A內的膜部分。180 m之部位係於自上述反應氣體之噴附開始起經過6分鐘之時間點上位於噴附處理空間3A內的膜部分。 In the TAC film 9 after the surface treatment, the portion which is located in the spray processing space 3A at the start of the spraying of the reaction gas is used as the processing start portion, and the number of the processing starts from the processing start portion to the downstream side in the transport direction. The diaphragm is taken at a location separated by a certain distance. The above specific distances are 30 m, 60 m, 90 m, 120 m, 150 m, and 180 m6. The portion of 30 m is the portion of the film located in the spray processing space 3A at the point of 1 minute from the start of the spraying of the above reaction gas. The portion of 60 m is the portion of the film located in the spray processing space 3A at the point of 2 minutes from the start of the spraying of the above reaction gas. The portion of 90 m is the portion of the film located in the spray processing space 3A at the point of 3 minutes from the start of the spraying of the above reaction gas. The portion of 120 m is the portion of the film located in the spray processing space 3A at a point of time 4 minutes from the start of the spraying of the above reaction gas. The portion of 150 m is the portion of the film located in the spray processing space 3A at the point of 5 minutes from the start of the spraying of the above reaction gas. The portion of 180 m is the portion of the film located in the spray processing space 3A at the point of 6 minutes from the start of the spraying of the above reaction gas.

將該等收取之TAC膜片分別與PVA膜貼合而製成偏光板樣品。使用混合有(A)聚合度500之PVA之5 wt%水溶液與(B)羧基甲基纖維素鈉之2 wt%水溶液的水溶液作為接著劑。將(A)及(B)之混合比設為(A):(B)=20:1。將接著劑之乾 燥條件設為80℃、5分鐘。偏光板樣品之寬度為25 mm。測定該偏光板樣品之初期拉伸強度(未暴露於下述溫熱條件時之接著強度)。將測定方法設為浮動輥法(JIS K6854)。對各收取部位測定5個偏光板樣品之初期拉伸強度並求出平均值。 These collected TAC films were bonded to a PVA film to prepare a polarizing plate sample. An aqueous solution of a 5 wt% aqueous solution of (A) PVA having a degree of polymerization of 500 and a 2 wt% aqueous solution of (B) sodium carboxymethylcellulose was used as an adhesive. The mixing ratio of (A) and (B) is set to (A): (B) = 20:1. Dry the adhesive The drying condition was set to 80 ° C for 5 minutes. The polarizer sample has a width of 25 mm. The initial tensile strength of the polarizing plate sample (the subsequent strength when not exposed to the following warm conditions) was measured. The measurement method was set to a floating roll method (JIS K6854). The initial tensile strength of five polarizing plate samples was measured for each collected portion, and the average value was determined.

其結果如表1所示,於30 m之部位之偏光板樣品上為10.3 N/25 mm。於60 m之部位之偏光板樣品上為10.4 N/25 mm。於90 m之部位之偏光板樣品上為10.1 N/25 mm。於120 m之部位之偏光板樣品上為10.9 N/25 mm。於150 m之部位之偏光板樣品上為10.5 N/25 mm。於180 m之部位之偏光板樣品上為10 N/25 mm。 The results are shown in Table 1, which was 10.3 N/25 mm on the polarizing plate sample at a position of 30 m. The polarizing plate sample at 60 m was 10.4 N/25 mm. The polarizing plate sample at a position of 90 m was 10.1 N/25 mm. The polarizing plate sample at a position of 120 m was 10.9 N/25 mm. The polarizing plate sample at 150 m was 10.5 N/25 mm. The polarizing plate sample at 180 m is 10 N/25 mm.

確認於自處理開始(反應氣體之噴附開始)起經過至少1分鐘時可發揮良好之處理性能。 It was confirmed that good processing performance was exhibited at least one minute from the start of the treatment (start of the spraying of the reaction gas).

又,亦測定暴露於高溫且多濕之溫熱條件下後之耐久接著強度。將溫熱條件設為60℃、95% RH。於該溫熱條件之恆溫恆濕槽內保持偏光板樣品1小時。其後,自恆溫恆濕槽取出偏光板樣品,進行1.5分鐘冷卻,其後,測定拉伸強度。將測定方法設為與初期拉伸強度相同之浮動輥法(JIS K6854)。 Further, the durability bonding strength after exposure to a high temperature and a moist temperature condition was also measured. The warming conditions were set to 60 ° C and 95% RH. The polarizing plate sample was kept for 1 hour in the constant temperature and humidity chamber under the warm conditions. Thereafter, the polarizing plate sample was taken out from the constant temperature and humidity chamber, and cooled for 1.5 minutes, and thereafter, the tensile strength was measured. The measurement method was set to the floating roll method (JIS K6854) which is the same as the initial tensile strength.

其結果如表1所示,於30 m之部位之偏光板樣品上為6.2 N/25 mm。於60 m之部位之偏光板樣品上為6.3 N/25 mm。於90 m之部位之偏光板樣品上為6.1 N/25 mm。於120 m之部位之偏光板樣品上為6.1 N/25 mm。於150 m之部位之偏光板樣品上為6.5 N/25 mm。於180 m之部位之偏光板樣品 上為6.1 N/25 mm。 The results are shown in Table 1. The polarizing plate sample at a position of 30 m was 6.2 N/25 mm. The polarizing plate sample at 60 m is 6.3 N/25 mm. The polarizing plate sample at a position of 90 m was 6.1 N/25 mm. The polarizing plate sample at a position of 120 m was 6.1 N/25 mm. The polarizing plate sample at 150 m is 6.5 N/25 mm. Polarized plate sample at 180 m The upper is 6.1 N/25 mm.

關於耐久接著強度,亦可確認於自處理開始(反應氣體之噴附開始)起經過至少1分鐘時可變得充分較大。 The durability adhesive strength can also be confirmed to be sufficiently large at least one minute after the start of the treatment (start of the spraying of the reaction gas).

因此,可將被處理膜9之損耗設為未達30 m。 Therefore, the loss of the film to be processed 9 can be set to less than 30 m.

6)評價2 6) Evaluation 2

又,於上述之表面處理後,調查丙烯酸單體對反轉輥14之轉移之有無。具體而言,利用乙醇含浸碎布擦拭反轉輥14,利用定量50 ml之乙醇萃取,並利用氣相層析法調查丙烯酸之有無。其結果,未檢測出丙烯酸,確認丙烯酸單體未轉移至反轉輥14上。因此,推測丙烯酸充分地電漿聚合。 Further, after the surface treatment described above, the presence or absence of the transfer of the acrylic monomer to the reverse roller 14 was investigated. Specifically, the reverse roll 14 was wiped with an ethanol impregnated rag, extracted with 50 ml of ethanol, and the presence or absence of acrylic acid was investigated by gas chromatography. As a result, acrylic acid was not detected, and it was confirmed that the acrylic monomer was not transferred to the reversing roll 14. Therefore, it is speculated that acrylic acid is sufficiently plasma-polymerized.

[比較例1] [Comparative Example 1]

於比較例1中,省略反應氣體排出步驟。除該方面以外,進行與實施例1相同之處理。即,使用與實施例1相同之裝置,不進行反應氣體排出而直接以搬送步驟、電漿照射步驟、反應氣體噴附步驟之順序開始動作。各步驟之處理條件及向下一步驟之切換時序與實施例1(除反應氣體排出步驟以外)相同。處理後之評價方法亦與實施例1相同。 In Comparative Example 1, the reaction gas discharge step was omitted. Except for this aspect, the same treatment as in Example 1 was carried out. That is, using the same apparatus as in Example 1, the operation was started in the order of the transport step, the plasma irradiation step, and the reaction gas spraying step without performing the reaction gas discharge. The processing conditions of the respective steps and the switching timing of the next step are the same as those of the first embodiment (except the reaction gas discharging step). The evaluation method after the treatment was also the same as in the first embodiment.

其結果如表1所示,初期接著強度於30 m之部位之偏光板樣品上為3.2 N/25 mm。於60 m之部位之偏光板樣品上為3.9 N/25 mm。於90 m之部位之偏光板樣品上為5.6 N/25 mm。於120 m之部位之偏光板樣品上為7.6 N/25 mm。於150 m之部位之偏光板樣品上為9.2 N/25 mm。於180 m之部位之偏光板樣品上為10.3 N/25 mm。 The results are shown in Table 1. The polarizing plate sample having an initial adhesion strength of 30 m was 3.2 N/25 mm. The polarizing plate sample at 60 m was 3.9 N/25 mm. The polarizing plate sample at a position of 90 m was 5.6 N/25 mm. The polarizing plate sample at a position of 120 m was 7.6 N/25 mm. The polarizing plate sample at 150 m is 9.2 N/25 mm. The polarizing plate sample at a position of 180 m was 10.3 N/25 mm.

又,耐久接著強度於30 m之部位之偏光板樣品上為0.7 N/25 mm。於60 m之部位之偏光板樣品上為0.8 N/25 mm。於90 m之部位之偏光板樣品上為1.1 N/25 mm。於120 m之部位之偏光板樣品上為1 N/25 mm。於150 m之部位之偏光板樣品上為3.3 N/25 mm。於180 m之部位之偏光板樣品上為6.5 N/25 mm。 Further, the polarizing plate sample having a durability of 30 m was 0.7 N/25 mm. The polarizing plate sample at 60 m was 0.8 N/25 mm. The polarizing plate sample at a position of 90 m was 1.1 N/25 mm. The polarizing plate sample at 120 m is 1 N/25 mm. The polarizing plate sample at a position of 150 m was 3.3 N/25 mm. The polarizing plate sample at 180 m is 6.5 N/25 mm.

處理性能自處理開始起至4~5分鐘左右無法達到實施例1之等級,而於自處理開始起經過5分鐘~6分鐘後達到實施例1之水平。被處理膜9之損耗成為180 m左右。 The treatment performance could not reach the level of Example 1 from about 4 to 5 minutes from the start of the treatment, and reached the level of Example 1 after 5 minutes to 6 minutes from the start of the treatment. The loss of the film to be processed 9 is about 180 m.

根據比較例1之結果,可確認於實施例1之裝置之情形時,反應氣體排出步驟之時間T1較佳為T1=5分鐘左右。 According to the result of Comparative Example 1, when the apparatus of Example 1 was confirmed, the time T 1 of the reaction gas discharge step was preferably about T 1 = 5 minutes.

進而,於比較例1中,亦以與實施例1之評價2相同之方法調查丙烯酸單體對反轉輥14之轉移之有無,結果未檢測出丙烯酸而可確認未轉移。 Further, in Comparative Example 1, the presence or absence of the transfer of the acrylic monomer to the reverse roller 14 was also examined in the same manner as in the evaluation 2 of Example 1, and as a result, no change was observed in the acrylic acid.

[比較例2] [Comparative Example 2]

於比較例2中,使用於圖1中省去反應氣體排出系統40之裝置。因此,未進行反應氣體排出步驟。又,使電漿照射步驟與反應氣體噴附步驟之順序與比較例1相反。即,以搬送步驟、反應氣體噴附步驟、電漿照射步驟之順序進行動作。具體而言,開始被處理膜9之搬送,且於搬送速度成為10 m/min以上之時間點上開始自汽化器31供給反應氣體。開始供給反應氣體後,於30秒後開始氮電漿照射。將各步驟之處理條件及處理後之評價方法設為與實施例1(除了反應氣體排出步驟)相同。 In Comparative Example 2, the apparatus for omitting the reaction gas discharge system 40 in Fig. 1 was used. Therefore, the reaction gas discharge step is not performed. Further, the order of the plasma irradiation step and the reaction gas spraying step was reversed to that of Comparative Example 1. That is, the operation is performed in the order of the transport step, the reaction gas spraying step, and the plasma irradiation step. Specifically, the conveyance of the film to be processed 9 is started, and the supply of the reaction gas from the vaporizer 31 is started at a time point when the conveyance speed is 10 m/min or more. After the supply of the reaction gas was started, the nitrogen plasma irradiation was started after 30 seconds. The treatment conditions of each step and the evaluation method after the treatment were the same as in Example 1 (except the reaction gas discharge step).

其結果如表1所示,初期接著強度於30 m之部位之偏光板樣品上為3.3 N/25 mm。於60 m之部位之偏光板樣品上為4 N/25 mm。於90 m之部位之偏光板樣品上為5.4 N/25 mm。於120 m之部位之偏光板樣品上為7.8 N/25 mm。於150 m之部位之偏光板樣品上為8.8 N/25 mm。於180 m之部位之偏光板樣品上為10.8 N/25 mm。 The results are shown in Table 1. The polarizing plate sample having an initial adhesion strength of 30 m was 3.3 N/25 mm. The polarizing plate sample at 60 m is 4 N/25 mm. The polarizing plate sample at a position of 90 m was 5.4 N/25 mm. The polarizing plate sample at a position of 120 m was 7.8 N/25 mm. The polarizing plate sample at 150 m was 8.8 N/25 mm. The polarizing plate sample at a position of 180 m was 10.8 N/25 mm.

又,耐久接著強度於30 m之部位之偏光板樣品上為0.7 N/25 mm。於60 m之部位之偏光板樣品上為0.8 N/25 mm。於90 m之部位之偏光板樣品上為1.3 N/25 mm。於120 m之部位之偏光板樣品上為1.2 N/25 mm。於150 m之部位之偏光板樣品上為3.6 N/25 mm。於180 m之部位之偏光板樣品上為6.2 N/25 mm。 Further, the polarizing plate sample having a durability of 30 m was 0.7 N/25 mm. The polarizing plate sample at 60 m was 0.8 N/25 mm. The polarizing plate sample at a position of 90 m was 1.3 N/25 mm. The polarizing plate sample at 120 m is 1.2 N/25 mm. The polarizing plate sample at 150 m is 3.6 N/25 mm. The polarizing plate sample at 180 m is 6.2 N/25 mm.

因此,處理性能之傾向與比較例1大致相同。 Therefore, the tendency of the processing performance was substantially the same as that of Comparative Example 1.

進而,以與實施例1之評價2相同之方法調查丙烯酸單體對反轉輥14之轉移之有無,結果檢測出丙烯酸,可確認產生轉移。 Further, the presence or absence of the transfer of the acrylic monomer to the reverse roller 14 was examined in the same manner as in the evaluation 2 of the first embodiment. As a result, acrylic acid was detected, and the transfer was confirmed.

根據實施例1及比較例1、2之結果,可確認:藉由於開始被處理膜9之表面處理時,首先進行反應氣體排出步驟,可大幅地減少被處理膜9之損耗。又,可確認:藉由於電漿照射之開始後開始噴附反應氣體,可防止丙烯酸單體之轉移。 According to the results of Example 1 and Comparative Examples 1 and 2, it was confirmed that the surface of the film to be processed 9 was first treated, and the reaction gas discharge step was first performed, whereby the loss of the film to be processed 9 was greatly reduced. Further, it was confirmed that the transfer of the acrylic acid monomer can be prevented by starting the spraying of the reaction gas after the start of the plasma irradiation.

[產業上之可利用性] [Industrial availability]

本發明例如可應用於平板顯示器(FPD,Flat Panel Display)之偏光板之製造。 The present invention can be applied, for example, to the manufacture of a polarizing plate of a flat panel display (FPD).

1‧‧‧膜表面處理裝置 1‧‧‧ Film surface treatment device

2‧‧‧電源 2‧‧‧Power supply

3‧‧‧噴附處理空間 3‧‧‧Spray processing space

4‧‧‧放電間隙(電漿處理空間) 4‧‧‧Discharge gap (plasma processing space)

8‧‧‧控制機構 8‧‧‧Control agency

9‧‧‧被處理膜 9‧‧‧Processed film

10‧‧‧處理部(支持搬送機構、電漿生成部) 10‧‧‧Processing Department (supporting transport mechanism, plasma generation department)

11、12、13‧‧‧輥電極 11, 12, 13‧‧‧ Roll electrode

14‧‧‧反轉輥 14‧‧‧Reverse Roller

15‧‧‧旋轉機構 15‧‧‧Rotating mechanism

19‧‧‧搬送路徑 19‧‧‧Transfer path

20‧‧‧放電氣體供給系統 20‧‧‧Discharge gas supply system

21‧‧‧放電氣體源 21‧‧‧Discharge gas source

22‧‧‧放電氣體通路 22‧‧‧Discharge gas path

23‧‧‧放電氣體噴嘴 23‧‧‧Discharge gas nozzle

23e‧‧‧噴出口 23e‧‧‧Spray outlet

24‧‧‧閉塞構件 24‧‧‧ occlusion components

30‧‧‧反應氣體供給系統 30‧‧‧Reactive gas supply system

31‧‧‧汽化器(反應氣體供給源) 31‧‧‧Vaporizer (reactive gas supply source)

32‧‧‧反應氣體供給通路 32‧‧‧Reactive gas supply path

33‧‧‧反應氣體供給噴嘴 33‧‧‧Reactive gas supply nozzle

33e‧‧‧噴出口 33e‧‧‧Spray outlet

34‧‧‧載氣源 34‧‧‧ Carrier gas source

35‧‧‧載氣導入通路 35‧‧‧Carrier gas introduction pathway

36‧‧‧遮蔽構件 36‧‧‧Shielding members

40‧‧‧反應氣體排出系統 40‧‧‧Reactive gas discharge system

41‧‧‧連接部 41‧‧‧Connecting Department

42‧‧‧排氣通路 42‧‧‧Exhaust passage

43‧‧‧除害裝置 43‧‧‧Injury device

51、52、53‧‧‧電磁開閉閥 51, 52, 53‧ ‧ electromagnetic opening and closing valve

54、55‧‧‧電磁開閉閥 54, 55‧‧‧Electromagnetic opening and closing valve

C‧‧‧處理槽 C‧‧‧Processing tank

圖1係本發明之一實施形態之膜表面處理裝置之電路圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a circuit diagram of a film surface treatment apparatus according to an embodiment of the present invention.

圖2係上述膜表面處理裝置之處理部之立體圖。 Fig. 2 is a perspective view of a processing unit of the film surface treatment apparatus.

圖3係表示上述膜表面處理裝置之運轉開始時之動作的時序圖。 Fig. 3 is a timing chart showing the operation at the start of the operation of the film surface treatment apparatus.

1‧‧‧膜表面處理裝置 1‧‧‧ Film surface treatment device

2‧‧‧電源 2‧‧‧Power supply

3A、3B‧‧‧噴附處理空間 3A, 3B‧‧‧spray processing space

4A、4B‧‧‧放電間隙(電漿處理空間) 4A, 4B‧‧‧ discharge gap (plasma processing space)

8‧‧‧控制機構 8‧‧‧Control agency

9‧‧‧被處理膜 9‧‧‧Processed film

10‧‧‧處理部(支持搬送機構、電漿生成部) 10‧‧‧Processing Department (supporting transport mechanism, plasma generation department)

11、12、13‧‧‧輥電極 11, 12, 13‧‧‧ Roll electrode

14A、14B‧‧‧反轉輥 14A, 14B‧‧‧Reverse Roller

15‧‧‧旋轉機構 15‧‧‧Rotating mechanism

19‧‧‧搬送路徑 19‧‧‧Transfer path

20‧‧‧放電氣體供給系統 20‧‧‧Discharge gas supply system

21A、21B‧‧‧放電氣體源 21A, 21B‧‧‧discharge gas source

22A、22B‧‧‧放電氣體通路 22A, 22B‧‧‧discharge gas path

23A、23B‧‧‧放電氣體噴嘴 23A, 23B‧‧‧discharge gas nozzle

23e‧‧‧噴出口 23e‧‧‧Spray outlet

24A、24B‧‧‧閉塞構件 24A, 24B‧‧‧ occlusion components

30‧‧‧反應氣體供給系統 30‧‧‧Reactive gas supply system

31A、31B‧‧‧汽化器(反應氣體供給源) 31A, 31B‧‧‧Vaporizer (reaction gas supply source)

32A、32B‧‧‧反應氣體供給通路 32A, 32B‧‧‧Reactive gas supply path

33A、33B‧‧‧反應氣體供給噴嘴 33A, 33B‧‧‧Reactive gas supply nozzle

33e‧‧‧噴出口 33e‧‧‧Spray outlet

34A、34B‧‧‧載氣源 34A, 34B‧‧‧ carrier gas source

35A、35B‧‧‧載氣導入通路 35A, 35B‧‧‧ carrier gas introduction pathway

36A、36B‧‧‧遮蔽構件 36A, 36B‧‧‧ Shielding members

40‧‧‧反應氣體排出系統 40‧‧‧Reactive gas discharge system

41A、41B‧‧‧連接部 41A, 41B‧‧‧ Connections

42A、42B‧‧‧排氣通路 42A, 42B‧‧‧ exhaust passage

43‧‧‧除害裝置 43‧‧‧Injury device

51A、51B、52A、52B、53A、53B‧‧‧電磁開閉閥 51A, 51B, 52A, 52B, 53A, 53B‧‧‧ electromagnetic opening and closing valves

54A、54B、55A、55B‧‧‧電磁開閉閥 54A, 54B, 55A, 55B‧‧‧ electromagnetic opening and closing valve

C‧‧‧處理槽 C‧‧‧Processing tank

Claims (5)

一種表面處理開始方法,其特徵在於:其係藉由使含有聚合性單體之反應氣體及電漿化之放電氣體接觸於樹脂製之被處理膜而對上述被處理膜進行表面處理時,開始上述表面處理之表面處理開始方法;並且其一面自反應氣體供給源開始送出上述反應氣體,一面不將送出之上述反應氣體送至面向上述被處理膜之供給噴嘴之噴出口而排出;且自上述送出開始起經過所需時間後,開始搬送上述被處理膜、及使上述電漿化之放電氣體接觸於上述被處理膜,進而,停止上述排出並開始自上述噴出口噴出反應氣體。 A method of starting a surface treatment by subjecting a reaction gas containing a polymerizable monomer and a plasma discharge plasma to a surface of the film to be treated by contacting a film to be treated with a resin, and starting The surface treatment start method of the surface treatment; and the reaction gas is sent from the reaction gas supply source while the reaction gas is not sent to the discharge port of the supply nozzle facing the film to be processed; After the elapse of the elapse of the elapse of the start of the ejecting, the film to be processed is started to be transported, and the plasma-discharged discharge gas is brought into contact with the film to be treated, and the discharge is stopped to start the discharge of the reaction gas from the discharge port. 如請求項1之表面處理開始方法,其中上述所需時間對應於直至上述反應氣體中之上述聚合性單體之濃度穩定為止之穩定化期間。 The surface treatment start method of claim 1, wherein the required time corresponds to a stabilization period until a concentration of the polymerizable monomer in the reaction gas is stabilized. 如請求項1或2之表面處理開始方法,其中開始搬送上述被處理膜,繼而開始使上述電漿化之放電氣體接觸於上述被處理膜。 The surface treatment start method according to claim 1 or 2, wherein the transfer of the film to be processed is started, and then the discharge plasma of the plasma is started to contact the film to be processed. 如請求項1或2之表面處理開始方法,其中開始使上述電漿化之放電氣體接觸於上述被處理膜,繼而開始自上述供給噴嘴噴出上述反應氣體。 A surface treatment starting method according to claim 1 or 2, wherein the discharge of the plasma-discharged gas is started to contact the film to be treated, and then the reaction gas is ejected from the supply nozzle. 一種膜表面處理裝置,其特徵在於:其係藉由使含有聚合性單體之反應氣體及電漿化之放電氣體接觸於樹脂製之被處理膜而對上述被處理膜進行表面處理者;並且其 包括:反應氣體供給系統,其包含自上述反應氣體之供給源延伸之供給通路、及連接於上述供給通路之下游端之供給噴嘴;支持搬送機構,其以與上述供給噴嘴相對面之方式支持上述被處理膜,且沿搬送路徑搬送上述被處理膜;電漿生成部,其於上述搬送路徑上之較上述供給噴嘴下游將放電氣體電漿化;排出通路,其連接於上述反應氣體供給系統之中途部;及控制機構,其於開始上述表面處理時,使自上述供給源送出之上述反應氣體自上述排出通路排出,自上述送出開始起經過所需時間後,開始上述搬送及上述電漿化,並且停止上述排出而開始自上述供給噴嘴噴出上述反應氣體。 A film surface treatment apparatus which is characterized in that a surface of a treated film is treated by bringing a reaction gas containing a polymerizable monomer and a plasma discharge gas into contact with a resin-made treated film; its The present invention includes a reaction gas supply system including a supply passage extending from a supply source of the reaction gas, and a supply nozzle connected to a downstream end of the supply passage, and a support transport mechanism that supports the surface opposite to the supply nozzle The processed film transports the processed film along the transport path; the plasma generating unit plasma-discharges the discharge gas downstream of the supply nozzle on the transport path; and the discharge path is connected to the reactive gas supply system And a control unit that discharges the reaction gas sent from the supply source from the discharge passage when the surface treatment is started, and starts the conveyance and the plasma formation after a lapse of a lapse of time from the start of the delivery. And stopping the discharge and starting to eject the reaction gas from the supply nozzle.
TW101135166A 2011-09-29 2012-09-25 Method for starting surface treatment of film and surface-treatment device TW201319637A (en)

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TWI723083B (en) * 2016-01-18 2021-04-01 日商積水化學工業股份有限公司 Surface treatment device and method for fluorine resin film

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JP2010150372A (en) * 2008-12-25 2010-07-08 Sekisui Chem Co Ltd Method and device for surface treatment of film, and method for manufacturing polarizing plate

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TWI723083B (en) * 2016-01-18 2021-04-01 日商積水化學工業股份有限公司 Surface treatment device and method for fluorine resin film

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