TW201318241A - Light emitting device, display device, and illumination device - Google Patents

Light emitting device, display device, and illumination device Download PDF

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Publication number
TW201318241A
TW201318241A TW101132600A TW101132600A TW201318241A TW 201318241 A TW201318241 A TW 201318241A TW 101132600 A TW101132600 A TW 101132600A TW 101132600 A TW101132600 A TW 101132600A TW 201318241 A TW201318241 A TW 201318241A
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light
electrode
layer
substrate
barrier
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TW101132600A
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Chinese (zh)
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Mitsuhiro Koden
Yoshimasa Fujita
Hisanori Bessho
Ayataka Endo
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Sharp Kk
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Priority claimed from JP2011198501A external-priority patent/JP2014225323A/en
Priority claimed from JP2012049319A external-priority patent/JP2014225330A/en
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW201318241A publication Critical patent/TW201318241A/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures
    • H10K2102/3023Direction of light emission
    • H10K2102/3026Top emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Abstract

A light emitting device includes a first substrate, a first electrode and a second electrode including a light transmitting conductive material which are laminated on one surface of the first substrate in this order, an organic light emitting layer formed between the first and second electrodes, and a first bank which partitions at least the first electrode in a predetermined region. The first bank includes a light-reflective material. A light generated in the organic light emitting layer is emitted outside through the second electrode.

Description

發光裝置、顯示裝置、及照明裝置 Illuminating device, display device, and lighting device

本發明係關於一種對有機發光層施加電壓而使其發光之發光裝置,及具備該發光裝置之顯示裝置、照明裝置。 The present invention relates to a light-emitting device that applies a voltage to an organic light-emitting layer to emit light, and a display device and an illumination device including the light-emitting device.

本申請案係基於2011年9月12日於日本提出申請之日本專利特願2011-198501號、及2012年3月6日於日本提出申請之日本專利特願2012-49319號並主張優先權,將其內容引用於此。 The present application claims priority based on Japanese Patent Application No. 2011-198501, filed on Sep. 12, 2011, and the Japanese Patent Application No. 2012-49319, filed on Jan. Quote its contents here.

近年來,隨著社會之高度資訊化,平板顯示器之需求正在提高。作為平板顯示器,例如可列舉:非自發光型液晶顯示器(LCD,Liquid Crystal Display)、自發光型電漿顯示器(PDP,Plasma Display Panel)、無機電致發光(無機EL(Electro Luminescence))顯示器、有機電致發光(以下亦稱作「有機EL」或「有機LED」)顯示器等。 In recent years, with the high level of informationization in society, the demand for flat panel displays is increasing. Examples of the flat panel display include a non-self-luminous liquid crystal display (LCD), a PDP (Plasma Display Panel), and an inorganic EL (Electro Luminescence) display. Organic electroluminescence (hereinafter also referred to as "organic EL" or "organic LED") displays.

該等平板顯示器中,尤其是有機EL(有機發光二極體(Organic light emitting diode))顯示器等使用有機發光層之發光元件由於薄型、廣視野角等優點而作為可成為下一代顯示器之主流之候補技術受到關注。 Among these flat panel displays, a light-emitting element using an organic light-emitting layer, such as an organic EL (Organic Light Emitting Diode) display, can be a mainstream of next-generation displays due to its advantages such as a thin shape and a wide viewing angle. Alternate technology is receiving attention.

作為取代先前之白熾燈、螢光燈之新的照明技術,近年來,LED照明正急速普及。進而,作為下一代照明,正積極進行有機EL照明之研究、事業化。有機EL照明之較大之優點在於薄型且可實現高發光效率之面照明,進而,藉由利用膜基板等,可實現各種形狀,因此亦具有可製作於 設計方面具有特徵之照明之優點。 As a new lighting technology that replaces the previous incandescent lamps and fluorescent lamps, LED lighting is rapidly spreading in recent years. Furthermore, as a next-generation lighting, research and business of organic EL lighting are being actively carried out. The advantage of the organic EL illumination is that it is thin and can realize high-luminance efficiency of the surface illumination, and further, various shapes can be realized by using a film substrate or the like, and therefore, it can be fabricated. The design has the advantage of characteristic lighting.

然而,另一方面,有機EL殘留有發光效率較低、消耗電力較大、壽命較短、可靠性較低等課題。發光效率通常以η (ext)(External Quantum Efficiency)=ηext×η =ηext×γ×ηr× f表示。此處,η (ext)為外部量子效率,ηext為外部光提取效率,η 為內部量子效率,γ為載波平衡,ηr為激子生成概率, f為螢光量子產率。 However, on the other hand, organic EL residues have problems such as low luminous efficiency, large power consumption, short life, and low reliability. Luminous efficiency is usually η (ext)(External Quantum Efficiency)=ηext×η =ηext×γ×ηr× f indicates. Here, η (ext) is the external quantum efficiency, ηext is the external light extraction efficiency, η For internal quantum efficiency, γ is the carrier balance and ηr is the exciton generation probability. f is the fluorescence quantum yield.

近年來,隨著材料之進步,內部量子效率確實地提高,尤其是隨著利用三重態之磷光材料之進展而獲得大幅度改善。然而,另一方面,光提取效率作為較大之課題而殘留。於有機EL元件中,由於所使用之有機發光層、透明電極層、玻璃基板等之折射率大於空氣,故而就基於斯奈爾定律之全反射條件而言,無法高效地提取光。所提取出之光之量通常為15~30%左右,大部分之光未射出至外部而損失。 In recent years, with the advancement of materials, the internal quantum efficiency has indeed improved, especially with the progress of the use of triplet phosphorescent materials. However, on the other hand, light extraction efficiency remains as a major problem. In the organic EL device, since the refractive index of the organic light-emitting layer, the transparent electrode layer, and the glass substrate to be used is larger than that of air, it is impossible to extract light efficiently based on the total reflection condition of Snell's law. The amount of light extracted is usually about 15 to 30%, and most of the light is not emitted to the outside and is lost.

光提取效率之下降並非僅降低發光效率、增大消耗電力。 The decrease in light extraction efficiency does not only reduce the luminous efficiency and increase the power consumption.

為了獲得所期望之亮度而必需使更多電流流通,因此亦對壽命或可靠性等造成影響。反言之,若光提取效率獲得改善,則對於有機EL之發光效率、消耗電力、壽命、可靠性等,可謂可期待較大之改善。 In order to obtain the desired brightness, it is necessary to circulate more current, and thus it also affects the life, reliability, and the like. Conversely, if the light extraction efficiency is improved, it is expected that a large improvement can be expected for the luminous efficiency, power consumption, life, reliability, and the like of the organic EL.

對於上述課題,例如於專利文獻1中,揭示有於透明導電層之與發光層相反之面上設置折射率於1.01~1.3之範圍的低折射率層之發明。 In the above-mentioned problem, for example, Patent Document 1 discloses an invention in which a low refractive index layer having a refractive index in the range of 1.01 to 1.3 is provided on a surface of the transparent conductive layer opposite to the light-emitting layer.

又,於專利文獻2中,揭示有於透明電極層與透光性基板之間設置在包含低折射率材料之基質樹脂中擴散有使光散射之粒子的浸出光擴散層之發明。 Further, Patent Document 2 discloses an invention in which a light-diffusion layer in which a light-scattering particle is diffused and dispersed in a matrix resin containing a low refractive index material between a transparent electrode layer and a light-transmitting substrate is disclosed.

又,於專利文獻3中,揭示有於提取光之側之基板面上設置包含多個微小粒子的光提取層之發明。 Further, Patent Document 3 discloses an invention in which a light extraction layer including a plurality of fine particles is provided on a surface of a substrate on which light is extracted.

又,於專利文獻4中,揭示有藉由將像素設為凹狀構造而提高光提取效率之發明。 Further, Patent Document 4 discloses an invention in which the light extraction efficiency is improved by making the pixel have a concave structure.

又,於專利文獻5中,揭示有藉由於像素之側面設置反射層而提高光提取效率之發明。 Further, Patent Document 5 discloses an invention in which light extraction efficiency is improved by providing a reflective layer on the side surface of a pixel.

進而,於專利文獻6中,揭示有於組合螢光體層與有機EL發光部而成之有機EL元件中在螢光體層之側面設置含有包含金屬粉、金屬粒子或白色顏料之樹脂的反射膜之發明。 Furthermore, in the organic EL device in which the phosphor layer and the organic EL light-emitting portion are combined, a reflective film containing a resin containing metal powder, metal particles or white pigment is provided on the side surface of the phosphor layer. invention.

又,於專利文獻7中,揭示有使用側面成為錐狀之障壁而提取光之發明。 Further, Patent Document 7 discloses an invention in which light is extracted by using a barrier having a tapered side surface.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2002-278477號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-278477

[專利文獻2]日本專利特開2004-296437號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-296437

[專利文獻3]日本專利特開2011-108395號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-108395

[專利文獻4]日本專利特開2011-009017號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2011-009017

[專利文獻5]日本專利特開2010-009793號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2010-009793

[專利文獻6]日本專利特開平11-329726號公報 [Patent Document 6] Japanese Patent Laid-Open No. Hei 11-329726

[專利文獻7]日本專利特開2006-012585號公報 [Patent Document 7] Japanese Patent Laid-Open Publication No. 2006-012585

於上述專利文獻1~4所揭示之發明中,雖然可提高光提取效率,但光提取效率之提高效果有限。即,完全未形成針對如下情況之對策:光經由有機發光層或電極而沿著面方向傳播並射出至外部之光減少。 In the inventions disclosed in the above Patent Documents 1 to 4, although the light extraction efficiency can be improved, the effect of improving the light extraction efficiency is limited. That is, there is no countermeasure against the fact that light that propagates in the surface direction via the organic light-emitting layer or the electrode and emits to the outside is reduced.

例如有機發光層之典型之折射率為1.8左右,絕緣層(障壁)之典型之折射率為1.5~1.8左右,作為透明電極層之ITO(Indium Tin Oxides,氧化銦錫)之典型之折射率為2.1~2.2左右,因此由於與低折射率層(折射率1.0~1.3左右)之折射率差而導致於與低折射率層之界面上發生全反射之成分較多。該發生全反射之成分經由有機發光層、絕緣層、透明電極層等而沿著面方向傳播,未射出至外部而損失。 For example, a typical refractive index of an organic light-emitting layer is about 1.8, a typical refractive index of an insulating layer (barrier) is about 1.5 to 1.8, and a typical refractive index of ITO (Indium Tin Oxides) as a transparent electrode layer is Since it is about 2.1 to 2.2, there are many components which cause total reflection at the interface with the low refractive index layer due to the difference in refractive index from the low refractive index layer (about 1.0 to 1.3 refractive index). The component that causes total reflection propagates in the plane direction via the organic light-emitting layer, the insulating layer, the transparent electrode layer, or the like, and is not emitted to the outside and is lost.

將透明電極層劃分成有機發光層之各像素區域之絕緣層(障壁)先前包含聚甲基丙烯酸甲酯、聚醯亞胺等高分子材料或SiO2等無機材料,色調為透明或黑色。因此,沿面方向擴散之光於絕緣層(障壁)為黑色之情形時由該絕緣層所吸收而損失。又,於絕緣層(障壁)為透明(透光性)之情形時,光經由該絕緣層而向鄰接之有機發光層或透明電極層傳播而損失。 The insulating layer (barrier) which divides the transparent electrode layer into each pixel region of the organic light-emitting layer previously contains a polymer material such as polymethyl methacrylate or polyimine or an inorganic material such as SiO 2 , and the color tone is transparent or black. Therefore, the light diffused in the plane direction is absorbed by the insulating layer and lost when the insulating layer (barrier) is black. Further, when the insulating layer (barrier) is transparent (transparent), light is transmitted to the adjacent organic light-emitting layer or the transparent electrode layer via the insulating layer and is lost.

又,於專利文獻5及6中,揭示有藉由於發光部分之側面形成反射膜而提高光提取效率之技術,進而於專利文獻6中,揭示有作為反射膜而含有包含金屬粉、金屬粒子或白 色顏料之樹脂,但存在構造上、製程上之課題。 Further, Patent Literatures 5 and 6 disclose a technique for improving the light extraction efficiency by forming a reflective film on the side surface of the light-emitting portion, and Patent Document 6 discloses that the conductive film contains metal powder, metal particles, or White Resin of color pigment, but there are problems in structure and process.

於專利文獻5之技術中,由於側面之反射膜為導電性,故而必需於反射膜上進而設置絕緣層,製程變得複雜。並且,由於形成有反射膜之部分為相對於基板而傾斜之間隔壁側面,故而不僅生產時之製程控制性較困難,而且若考慮用以形成圖案之曝光位置對準範圍等,則存在像素開口部變小之課題。若像素開口部變小,則為了獲得作為顯示器之所期望之亮度,必需提高像素開口部之發光亮度。 In the technique of Patent Document 5, since the reflection film on the side surface is electrically conductive, it is necessary to further provide an insulating layer on the reflection film, which complicates the process. Further, since the portion where the reflective film is formed is the side of the partition wall which is inclined with respect to the substrate, not only the process controllability at the time of production is difficult, but also the pixel opening is present in consideration of the exposure position alignment range for forming a pattern or the like. The subject of the ministry. When the pixel opening portion is small, in order to obtain a desired brightness as a display, it is necessary to increase the light emission luminance of the pixel opening portion.

於專利文獻6之技術中,揭示有於螢光體層之側面形成反射膜之技術,含有包含金屬粉、金屬粒子或白色顏料之樹脂作為反射膜之技術,但對於將該技術應用於有機EL發光部分之方面未作任何揭示或暗示。又,若欲將該技術應用於有機EL發光部而於有機發光部之側面形成反射膜,則產生構造上、製程上之課題。首先,有機EL之發光部分所使用之有機材料對於水分、氧、溶劑等之耐性極弱,就製程而言極難於該有機EL發光部分之側面形成反射膜。又,該技術存在如下課題:不論於有機EL之各像素上分離形成發光層之情形時,或者於使發光層於各像素上分離並於整面形成之構造中,均無法應用。進而,於考慮由來自有機EL發光部之光導波所引起之光損失時,亦必需考慮來自電極等發光部分以外之導波,但於專利文獻6中,對於該等未作任何揭示或暗示。 In the technique of Patent Document 6, a technique of forming a reflective film on the side of a phosphor layer, a technique containing a resin containing metal powder, metal particles or white pigment as a reflective film is disclosed, but the technique is applied to organic EL light emission. Some aspects are not disclosed or implied. Further, if the technique is applied to the organic EL light-emitting portion and the reflective film is formed on the side surface of the organic light-emitting portion, the problem of structure and process is caused. First, the organic material used in the light-emitting portion of the organic EL is extremely resistant to moisture, oxygen, solvent, and the like, and it is extremely difficult to form a reflective film on the side surface of the organic EL light-emitting portion in terms of the process. Further, this technique has no problem in that it is not applicable to the case where the light-emitting layer is formed separately on each pixel of the organic EL, or the structure in which the light-emitting layer is separated on each pixel and formed on the entire surface. Further, when considering the light loss caused by the optical waveguide from the organic EL light-emitting portion, it is necessary to consider a guided wave other than the light-emitting portion such as an electrode. However, Patent Document 6 does not disclose or suggest any such.

又,於專利文獻7所揭示之發明中,揭示有使用側面成為錐狀之障壁而提取光之發明,於該方法之情形時,於有 機層、或透明電極內導波而沿橫方向擴散之光並未完全消失,光提取之效果不可謂充分。又,由於錐角之控制較重要,故而考慮到生產之情形時之製程範圍較窄。 Further, in the invention disclosed in Patent Document 7, there is disclosed an invention in which light is extracted by using a barrier having a tapered side surface, and in the case of the method, The light that is guided by the carrier layer or the transparent electrode and diffused in the lateral direction does not completely disappear, and the effect of light extraction is not sufficient. Moreover, since the control of the taper angle is important, the process range is narrow in consideration of the production situation.

本發明係鑒於上述情況而成者,其目的在於提供一種使自有機發光層發出之光高效地向外部射出並可高亮度地發光之發光裝置、顯示裝置、及照明裝置。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a light-emitting device, a display device, and an illumination device that efficiently emit light emitted from an organic light-emitting layer to the outside and emit light with high luminance.

本發明之若干態樣係提供如下所示之發光裝置、顯示裝置、及照明裝置。 Several aspects of the present invention provide a light-emitting device, a display device, and a lighting device as shown below.

即,本發明之一態樣中之發光裝置具備第一基板、依序積層於上述第一基板之一面上之第一電極及包含透光性導電材之第二電極、形成於上述第一電極及上述第二電極之間的有機發光層、及至少將上述第一電極劃分成特定區域之第一障壁,且上述第一障壁包含具有光反射性之材料,上述有機發光層所發出之光經由上述第二電極而射出至外部。 That is, the light-emitting device according to an aspect of the present invention includes a first substrate, a first electrode sequentially laminated on one surface of the first substrate, and a second electrode including a light-transmitting conductive material, formed on the first electrode And an organic light-emitting layer between the second electrodes; and a first barrier wall that divides at least the first electrode into a specific region, and the first barrier layer includes a material having light reflectivity, and the light emitted by the organic light-emitting layer passes through The second electrode is emitted to the outside.

於本發明之一態樣中之發光裝置中,上述第一電極可具有遮光性。 In the light-emitting device of one aspect of the invention, the first electrode may have a light-shielding property.

於本發明之一態樣中之發光裝置中,上述第一電極可包含光反射性導電材料。 In a light-emitting device according to an aspect of the invention, the first electrode may include a light-reflective conductive material.

本發明之一態樣中之發光裝置可進而具有覆蓋上述第二電極及上述障壁之絕緣膜。 The light-emitting device according to an aspect of the present invention may further have an insulating film covering the second electrode and the barrier rib.

本發明之一態樣中之發光裝置可進而具有設置於上述第二電極上之第二基板。 The light-emitting device of one aspect of the present invention may further have a second substrate disposed on the second electrode.

本發明之一態樣中之發光裝置可進而包含設置於上述第二基板與上述第二電極之間、且折射率低於上述第二基板的低折射率層。 The light-emitting device according to an aspect of the present invention may further include a low refractive index layer disposed between the second substrate and the second electrode and having a lower refractive index than the second substrate.

於本發明之一態樣中之發光裝置中,上述低折射率層可為氣體。 In the light-emitting device of one aspect of the invention, the low refractive index layer may be a gas.

本發明之一態樣中之發光裝置可進而包含設置於上述第二基板上、且與上述障壁相對的光反射性對向障壁。 The light-emitting device according to an aspect of the present invention may further include a light-reflective opposing barrier provided on the second substrate and facing the barrier.

本發明之一態樣中之發光裝置進而具有配置於上述第一基板與上述第一電極之間的反射層、及配置於上述第一電極與上述反射層之間的中間層,且上述第一電極包含透光性導電材料,上述中間層可包含透光性材料。 A light-emitting device according to an aspect of the present invention further includes a reflective layer disposed between the first substrate and the first electrode, and an intermediate layer disposed between the first electrode and the reflective layer, and the first The electrode includes a light transmissive conductive material, and the intermediate layer may include a light transmissive material.

於本發明之一態樣中之發光裝置中,上述中間層可包含使上述第一電極與上述反射層電性連接之連接區域。 In a light-emitting device according to an aspect of the invention, the intermediate layer may include a connection region electrically connecting the first electrode and the reflective layer.

本發明之一態樣中之發光裝置可進而具有以與上述第一基板對向之方式設置之第二基板、配置於上述第一基板與上述第二基板之間且折射率低於上述第二基板的低折射率層、及配置於上述第一基板與上述第二基板之間的水分吸收構件。 The illuminating device according to an aspect of the present invention may further include a second substrate disposed opposite to the first substrate, disposed between the first substrate and the second substrate, and having a refractive index lower than the second a low refractive index layer of the substrate and a moisture absorbing member disposed between the first substrate and the second substrate.

本發明之一態樣中之發光裝置進而具有配置於上述第一基板與上述第一電極之間的中間層,且上述第一基板包含光反射性材料,上述第一電極包含透光性導電材料,上述中間層可包含透光性材料。 The light-emitting device according to an aspect of the present invention further includes an intermediate layer disposed between the first substrate and the first electrode, wherein the first substrate includes a light reflective material, and the first electrode includes a light-transmitting conductive material The intermediate layer may include a light transmissive material.

於本發明之一態樣中之發光裝置中,上述障壁與上述反射層可使其一部分相互接觸。 In the light-emitting device of one aspect of the invention, the barrier rib and the reflective layer may have a portion thereof in contact with each other.

於本發明之一態樣中之發光裝置中,可按照自上述有機層之發光區域之中心位置至上述第一電極的間隔成為200 nm以上之方式進行設定。 In the light-emitting device according to an aspect of the present invention, the distance from the center position of the light-emitting region of the organic layer to the interval between the first electrodes is set to be 200 nm or more.

於本發明之一態樣中之發光裝置中,上述障壁所含之上述材料可為進而具有光擴散性之材料。 In the light-emitting device of one aspect of the invention, the material contained in the barrier rib may be a material having further light diffusibility.

於本發明之一態樣中之發光裝置中,上述障壁所含之上述材料可為白色。 In the light-emitting device of one aspect of the invention, the material contained in the barrier rib may be white.

於本發明之一態樣中之發光裝置中,上述障壁所含之上述材料可包含樹脂、及分散於上述樹脂中之微細之粒子。 In the light-emitting device according to an aspect of the invention, the material contained in the barrier rib may include a resin and fine particles dispersed in the resin.

於本發明之一態樣中之發光裝置中,上述粒子之粒徑可為200 nm以上且5 μm以下。 In the light-emitting device of one aspect of the invention, the particle diameter of the particles may be 200 nm or more and 5 μm or less.

於本發明之一態樣中之發光裝置中,上述第一障壁包含第二障壁、第三障壁、及光反射膜,上述第二障壁形成於上述第一基板上,上述光反射膜覆蓋上述第二障壁,上述第三障壁覆蓋上述光反射膜,上述第三障壁可包含具有透光性之材料。 In a light-emitting device according to an aspect of the present invention, the first barrier rib includes a second barrier rib, a third barrier rib, and a light reflecting film, wherein the second barrier rib is formed on the first substrate, and the light reflecting film covers the first In the second barrier, the third barrier covers the light reflecting film, and the third barrier may include a light transmissive material.

於本發明之一態樣中之發光裝置中,上述第二障壁可為黑色。 In the light-emitting device of one aspect of the invention, the second barrier may be black.

於本發明之一態樣中之發光裝置中,上述第三障壁所含之上述材料可進而具有光散射性。 In the light-emitting device of one aspect of the invention, the material contained in the third barrier may further have light scattering properties.

本發明之其他態樣中之照明裝置具備上述發光裝置、及控制上述發光裝置之驅動部。 An illumination device according to another aspect of the present invention includes the above-described light emitting device and a driving unit that controls the light emitting device.

本發明之另一其他態樣中之照明裝置具備上述發光裝置、及控制上述發光裝置之驅動部。 A lighting device according to still another aspect of the present invention includes the above-described light emitting device and a driving unit that controls the light emitting device.

根據本發明之態樣,可提供一種高發光效率(高亮度)之發光裝置、顯示裝置、及照明裝置。 According to an aspect of the present invention, a light-emitting device, a display device, and a lighting device having high luminous efficiency (high luminance) can be provided.

以下,參照圖式對本發明之態樣之發光裝置、顯示裝置、及電子機器之一實施形態進行說明。再者,以下所示之實施形態係為了更佳地理解發明之主旨而具體說明者,只要無特別指定,則並不限定本發明之態樣。又,為了使本發明之態樣之特徵易於理解,以下說明中所使用之圖式存在為方便起見而將成為主要部位之部分放大顯示之情況,各構成要素之尺寸比率等未必與實際情況相同。 Hereinafter, an embodiment of a light-emitting device, a display device, and an electronic device according to aspects of the present invention will be described with reference to the drawings. In addition, the embodiment shown below is specifically described in order to better understand the gist of the invention, and the aspect of the invention is not limited unless otherwise specified. In addition, in order to make the features of the aspect of the present invention easy to understand, the drawings used in the following description have a case where a part of the main part is enlarged for convenience, and the dimensional ratio of each component is not necessarily the actual situation. the same.

(發光裝置:第一實施形態) (Light-emitting device: First embodiment)

圖1係表示第一實施形態之發光裝置之概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing a light-emitting device of a first embodiment.

發光裝置10具有基板11、第一電極(下部電極)12、第二電極(上部電極)13、及有機發光層14。第一電極(下部電極)12、第二電極(上部電極)13依序積層於該基板11之一面11a上。有機發光層14形成於該第一電極12及第二電極13之間。 The light-emitting device 10 has a substrate 11, a first electrode (lower electrode) 12, a second electrode (upper electrode) 13, and an organic light-emitting layer 14. The first electrode (lower electrode) 12 and the second electrode (upper electrode) 13 are sequentially laminated on one surface 11a of the substrate 11. The organic light emitting layer 14 is formed between the first electrode 12 and the second electrode 13.

又,於基板11之一面11a上形成有將第一電極12劃分成複數個特定區域之障壁(絕緣層)15。上述障壁15係例如與有機發光層14之相當於1像素之區域對應,將第一電極12劃分成複數個區域,使劃分之第一電極12彼此相互電性絕緣。 Further, a barrier (insulating layer) 15 for dividing the first electrode 12 into a plurality of specific regions is formed on one surface 11a of the substrate 11. The barrier rib 15 corresponds to, for example, a region corresponding to one pixel of the organic light-emitting layer 14, and divides the first electrode 12 into a plurality of regions, so that the divided first electrodes 12 are electrically insulated from each other.

作為製作製程,例如可使用如下製程等:於基板11上形 成第一電極(下部電極)12,其後形成障壁15,進而形成有機發光層14、第二電極(上部電極)13。有機EL所使用之材料對於水分、氧等之耐性極弱,因此較佳為於形成有機發光層14之前、即形成第一電極(下部電極)12及障壁15後進行充分之脫水步驟(烘烤步驟、真空乾燥步驟等)。 As the manufacturing process, for example, the following process or the like can be used: on the substrate 11 The first electrode (lower electrode) 12 is formed, and thereafter the barrier rib 15 is formed, thereby forming the organic light-emitting layer 14 and the second electrode (upper electrode) 13. Since the material used for the organic EL is extremely resistant to moisture, oxygen, and the like, it is preferable to perform a sufficient dehydration step (baking) before forming the organic light-emitting layer 14, that is, after forming the first electrode (lower electrode) 12 and the barrier 15 Step, vacuum drying step, etc.).

基板11為透光性或非透光性(遮光性),例如包含玻璃、樹脂、金屬板等。 The substrate 11 is translucent or non-translucent (light-shielding), and includes, for example, glass, a resin, a metal plate, or the like.

第一電極(下部電極)12存在為遮光性之情況及為透光性之情況。於為透光性之情形時,只要為透明電極即可,例如使用ITO(Indium-tin-oxide,氧化銦錫)、或ZnO(Zinc oxide,氧化鋅)等。又,於為遮光性之情形時,例如只要由金屬膜形成即可。 The first electrode (lower electrode) 12 may be in a light-shielding state and a light-transmitting property. In the case of light transmissivity, it is sufficient to use a transparent electrode, for example, ITO (Indium-tin-oxide) or ZnO (Zinc oxide). Moreover, when it is a light-shielding property, it is good if it is formed with a metal film, for example.

於第一電極(下部電極)12為遮光性之情形時,自第二電極(上部電極)13側提取所發出之光而成為所謂頂部發光型有機EL。又,於第一電極(下部電極)12為透光性之情形時,自第一電極(下部電極)12及第二電極(上部電極)13兩面提取所發出之光而成為所謂雙面發光型有機EL。 When the first electrode (lower electrode) 12 is light-shielding, the emitted light is extracted from the second electrode (upper electrode) 13 side to become a so-called top emission type organic EL. Further, when the first electrode (lower electrode) 12 is translucent, the emitted light is extracted from both surfaces of the first electrode (lower electrode) 12 and the second electrode (upper electrode) 13 to become a so-called double-sided light-emitting type. Organic EL.

上述第一電極12之厚度例如為100 nm左右。再者,第一電極12通常為陽極,亦可設為陰極,於該情形時,使用低工作函數之材料。又,為了降低配線電阻等,亦可並設輔助配線。輔助配線例如可由Al、Ag、Ta、Ti、Ni等金屬材料所形成。 The thickness of the first electrode 12 is, for example, about 100 nm. Further, the first electrode 12 is usually an anode or a cathode, and in this case, a material having a low work function is used. Further, in order to reduce wiring resistance and the like, auxiliary wiring may be provided in combination. The auxiliary wiring may be formed of a metal material such as Al, Ag, Ta, Ti, or Ni.

第一電極(下部電極)12係藉由障壁(絕緣層)15而劃分成複數個特定區域。於將本實施形態之發光裝置用作顯示裝 置(有機EL顯示器)之情形時,只要將第一電極(下部電極)12劃分成相當於1像素之各區域即可。 The first electrode (lower electrode) 12 is divided into a plurality of specific regions by a barrier (insulating layer) 15. The illuminating device of the embodiment is used as a display device In the case of the (organic EL display), the first electrode (lower electrode) 12 may be divided into regions corresponding to one pixel.

第二電極(上部電極)13包含透光性透明電極,藉此,有機發光層14發出之光經由第二電極(上部電極)13而射出至外部,成為所謂頂部發光型發光裝置。第二電極13通常形成陰極,可使用LiF/ITO、MgAg/IZO(Indium Zinc Oxide,氧化銦錫)等。再者,亦可將第二電極(上部電極)13設為陽極,於該情形時,較佳地使用工作函數較高之材料、例如ITO等。 The second electrode (upper electrode) 13 includes a translucent transparent electrode, whereby the light emitted from the organic light-emitting layer 14 is emitted to the outside via the second electrode (upper electrode) 13, and becomes a so-called top emission type light-emitting device. The second electrode 13 usually forms a cathode, and LiF/ITO, MgAg/IZO (Indium Zinc Oxide, etc.) can be used. Further, the second electrode (upper electrode) 13 may be an anode. In this case, a material having a higher work function, such as ITO or the like, is preferably used.

除該等以外,亦可使用各種公知之電極材料作為形成第一電極12及第二電極13之電極材料。於為陽極之情形時,就更高效地向有機發光層14注入電洞之觀點而言,作為透明電極材料,可列舉:工作函數為4.5 eV以上之金(Au)、鉑(Pt)、鎳(Ni)等金屬,及包含銦(In)與錫(Sn)之氧化物(ITO)、錫(Sn)之氧化物(SnO2)、包含銦(In)與鋅(Zn)之氧化物(IZO)等。 In addition to these, various well-known electrode materials can be used as the electrode material for forming the first electrode 12 and the second electrode 13. In the case of the anode, in order to inject a hole into the organic light-emitting layer 14 more efficiently, as the transparent electrode material, gold (Au), platinum (Pt), and nickel having a working function of 4.5 eV or more are mentioned. a metal such as (Ni), and an oxide (ITO) containing indium (In) and tin (Sn), an oxide (SnO 2 ) of tin (Sn), and an oxide containing indium (In) and zinc (Zn) ( IZO) and so on.

又,作為形成陰極之電極材料,就更高效地向有機發光層14注入電子之觀點而言,可列舉:工作函數為4.5 eV以下之鋰(Li)、鈣(Ca)、鈰(Ce)、鋇(Ba)、鋁(Al)等金屬,或含有該等金屬之Mg:Ag合金、Li:Al合金等合金。 Further, as an electrode material for forming a cathode, in order to inject electrons into the organic light-emitting layer 14 more efficiently, lithium (Li), calcium (Ca), cesium (Ce) having a working function of 4.5 eV or less can be cited. A metal such as barium (Ba) or aluminum (Al) or an alloy such as Mg:Ag alloy or Li:Al alloy containing the metals.

第一電極12及第二電極13可使用上述材料並藉由EB(electron-beam,電子束)蒸鍍法、濺鍍法、離子電鍍法、電阻加熱蒸鍍法等公知之方法而形成,但本發明並不限定於該等形成方法。又,視需要亦可藉由光刻法、雷射剝離 法而使所形成之電極圖案化,亦可藉由與蔽蔭遮罩組合而直接形成經圖案化之電極。其膜厚較佳為50 nm以上。於膜厚未達50 nm之情形時,配線電阻變高,故而有引起驅動電壓之上升之虞。 The first electrode 12 and the second electrode 13 can be formed by a known method such as an EB (electron-beam) vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method, but using the above materials. The invention is not limited to the methods of forming. Also, if necessary, it can also be stripped by photolithography or laser. The formed electrode is patterned and the patterned electrode can be directly formed by combining with a shadow mask. The film thickness is preferably 50 nm or more. When the film thickness is less than 50 nm, the wiring resistance becomes high, so that the driving voltage is increased.

有機發光層(有機EL發光體)14藉由施加於第一電極12與第二電極13之間的電壓而發出特定波段之光。有機發光層(有機EL發光體)14可為單層,通常亦可包含複數層,例如可使用α-NPD(N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine,N,N'-二(萘-1-基)-N,N'-二苯基-聯苯胺)與Alq3(Aluminium tris(quinolin-8-olate),三(8-羥基喹啉)鋁)之積層膜等。又,亦存在於作為陽極之第一電極(下部電極)12與作為陰極之第二電極(上部電極)13之間形成包含電洞注入層、電洞傳輸層、發光層、電洞阻擋層、電子傳輸層、電子注入層等的多層有機發光層之情況。 The organic light-emitting layer (organic EL light-emitting body) 14 emits light of a specific wavelength band by a voltage applied between the first electrode 12 and the second electrode 13. The organic light-emitting layer (organic EL light-emitting body) 14 may be a single layer, and usually may also include a plurality of layers, for example, α-NPD (N, N'-di(naphthalene-1-yl)-N, N'-diphenylbenzidine, may be used. N,N'-bis(naphthalen-1-yl)-N,N'-diphenyl-benzidine) and Alq3 (Aluminium tris (quinolin-8-olate), tris(8-hydroxyquinoline)aluminum) Laminated film, etc. Further, a hole injection layer, a hole transport layer, a light-emitting layer, and a hole barrier layer are formed between the first electrode (lower electrode) 12 as an anode and the second electrode (upper electrode) 13 as a cathode. The case of a multilayer organic light-emitting layer such as an electron transport layer or an electron injection layer.

除該等層以外,亦正在對併用MoO3層、C60層、含富勒烯層、含量子點層等各種層之情況進行積極研究,自不待言,該等均可應用本實施形態。使用含量子點層之發光元件係稱作QLED(Quantum-dotlight-emitting diode,量子點發光二極體)。又,亦可使用積層發光區域之所謂串聯構造。第一電極12與第二電極13之間所配置之層的膜厚通常各層為數10 nm左右。當然,目前尚未發明之發光元件、未被普遍認知之發光元件等只要為採取本實施形態之構成者,則自不待言均可應用本實施形態之技術。 In addition to these layers, active research is being carried out on the use of various layers such as MoO 3 layer, C 60 layer, fullerene layer, and content sub-dot layer, and it is needless to say that these embodiments can be applied. . A light-emitting element using a content sub-dot layer is called a QLED (Quantum-dot light-emitting diode). Further, a so-called series structure of a laminated light-emitting region can also be used. The film thickness of the layer disposed between the first electrode 12 and the second electrode 13 is usually about 10 nm in each layer. Of course, the light-emitting element that has not been invented at present, the light-emitting element that has not been generally recognized, and the like can be applied to the embodiment of the present embodiment as long as the configuration of the present embodiment is adopted.

作為有機發光層14之層構造之具體例,可列舉下述構 成,但本實施形態並不限定於該等。 Specific examples of the layer structure of the organic light-emitting layer 14 include the following structures. However, this embodiment is not limited to these.

(1)有機發光層 (1) Organic light-emitting layer

(2)電洞傳輸層/有機發光層 (2) hole transport layer / organic light-emitting layer

(3)有機發光層/電子傳輸層 (3) Organic light-emitting layer/electron transport layer

(4)電洞傳輸層/有機發光層/電子傳輸層 (4) Hole transport layer / organic light-emitting layer / electron transport layer

(5)電洞注入層/電洞傳輸層/有機發光層/電子傳輸層 (5) Hole injection layer/hole transmission layer/organic light-emitting layer/electron transport layer

(6)電洞注入層/電洞傳輸層/有機發光層/電子傳輸層/電子注入層 (6) Hole injection layer/hole transmission layer/organic light-emitting layer/electron transport layer/electron injection layer

(7)電洞注入層/電洞傳輸層/有機發光層/電洞阻擋層/電子傳輸層 (7) Hole injection layer/hole transmission layer/organic light-emitting layer/hole blocking layer/electron transport layer

(8)電洞注入層/電洞傳輸層/有機發光層/電洞阻擋層/電子傳輸層/電子注入層 (8) Hole injection layer/hole transmission layer/organic light-emitting layer/hole blocking layer/electron transport layer/electron injection layer

(9)電洞注入層/電洞傳輸層/電子阻擋層/有機發光層/電洞阻擋層/電子傳輸層/電子注入層 (9) Hole injection layer/hole transmission layer/electron barrier layer/organic light-emitting layer/hole barrier layer/electron transport layer/electron injection layer

此處,有機發光層、電洞注入層、電洞傳輸層、電洞阻擋層、電子阻擋層、電子傳輸層及電子注入層之各層可為單層構造,亦可為多層構造。 Here, each of the organic light-emitting layer, the hole injection layer, the hole transport layer, the hole barrier layer, the electron blocking layer, the electron transport layer, and the electron injection layer may have a single layer structure or a multilayer structure.

有機發光層14可僅包含以下所例示之有機發光材料,亦可包含發光性摻雜劑與主體材料之組合,可任意地包含電洞傳輸材料、電子傳輸材料、添加劑(施體、受體等)等,又,亦可為使該等材料分散於高分子材料(黏合用樹脂)或無機材料中之構成。就發光效率及壽命之觀點而言,較佳為使發光性摻雜劑分散於主體材料中而成者。 The organic light-emitting layer 14 may include only the organic light-emitting material exemplified below, or may include a combination of a light-emitting dopant and a host material, and may optionally include a hole transport material, an electron transport material, and an additive (application body, acceptor, etc.). Further, it may be a structure in which the materials are dispersed in a polymer material (adhesive resin) or an inorganic material. From the viewpoint of luminous efficiency and life, it is preferred to disperse the luminescent dopant in the host material.

作為有機發光材料,可使用有機發光層用之公知之發光 材料。上述發光材料分為低分子發光材料、高分子發光材料等,以下例示該等具體之化合物,但本實施形態並不限定於該等材料。又,上述發光材料亦可分為螢光材料、磷光材料等,就低電力消耗化之觀點而言,較佳為使用發光效率較高之磷光材料。 As the organic light-emitting material, a known light-emitting layer for an organic light-emitting layer can be used. material. The above-mentioned luminescent material is classified into a low molecular luminescent material, a polymer luminescent material, etc., and the specific compounds are exemplified below, but the present embodiment is not limited to these materials. Further, the luminescent material may be classified into a fluorescent material or a phosphorescent material, and from the viewpoint of low power consumption, it is preferred to use a phosphorescent material having a high luminous efficiency.

此處,以下例示具體之化合物,但本實施形態並不限定於該等材料。 Here, specific compounds are exemplified below, but the present embodiment is not limited to these materials.

作為發光層中任意含有之發光性摻雜劑,可使用有機發光層用之公知之摻雜材料。作為上述摻雜材料,例如作為紫外發光材料,可列舉:對聯四苯、3,5,3,5-四-第三丁基六苯、3,5,3,5-四-第三丁基-對五苯等螢光發光材料等。作為藍色發光材料,可列舉:苯乙烯衍生物等螢光發光材料,雙[(4,6-二氟苯基)-吡啶-N,C2']吡啶甲醯合銥(III)(FIrpic)、雙(4',6'-二氟苯基吡啶)四(1-吡唑基)硼酸銥(III)(FIr6)等磷光發光有機金屬錯合物等。 As the luminescent dopant which is optionally contained in the light-emitting layer, a known dopant material for the organic light-emitting layer can be used. As the above dopant material, for example, as the ultraviolet light-emitting material, p-tetraphenyl, 3,5,3,5-tetra-t-butylhexabenzene, 3,5,3,5-tetra-t-butyl group can be cited. - Fluorescent materials such as p-pentene. Examples of the blue light-emitting material include a fluorescent material such as a styrene derivative, and bis[(4,6-difluorophenyl)-pyridine-N,C2']pyridinecarboxamide (III) (FIrpic). A phosphorescent organic metal complex such as bis(4',6'-difluorophenylpyridine)tetrakis(1-pyrazolyl)borate (III) (FIr 6 ).

又,作為使用摻雜劑時之主體材料,可使用有機EL用之公知之主體材料。作為上述主體材料,可列舉:上述低分子發光材料、高分子發光材料,4,4'-雙(咔唑)聯苯、9,9-二(4-二咔唑-苄基)茀(CPF,9,9-di(4-dicarbazole-benzyl)fluorene)、3,6-雙(三苯基矽烷基)咔唑(mCP)、(PCF(Phenyl Chloroformate,氯甲酸苯酯))等咔唑衍生物,4-(二苯基磷酸基)-N,N-二苯基苯胺(HM-Al)等苯胺衍生物,1,3-雙(9-苯基-9H-茀-9-基)苯(mDPFB,1,3-bis(9-phenyl-9H-fluorene-9-yl)benzene)、1,4-雙(9-苯基-9H-茀-9-基)苯(pDPFB,1,4- bis(9-phenyl-9H-fluorene-9-yl)benzene)等茀衍生物等。 Further, as a host material when a dopant is used, a known host material for organic EL can be used. Examples of the host material include the above-mentioned low molecular light-emitting material and polymer light-emitting material, 4,4′-bis(carbazole)biphenyl, 9,9-bis(4-dicarbazole-benzyl)fluorene (CPF). , 9,9-di(4-dicarbazole-benzyl)fluorene), 3,6-bis(triphenylphosphonyl)carbazole (mCP), (PCF (Phenyl Chloroformate)) An aniline derivative such as 4-(diphenylphosphoryl)-N,N-diphenylaniline (HM-Al), 1,3-bis(9-phenyl-9H-fluoren-9-yl)benzene (mDPFB, 1,3-bis(9-phenyl-9H-fluorene-9-yl)benzene), 1,4-bis(9-phenyl-9H-fluoren-9-yl)benzene (pDPFB, 1,4 - An anthracene derivative such as bis(9-phenyl-9H-fluorene-9-yl)benzene).

為了更高效地自電極注入電荷(電洞、電子)並向發光層傳輸(注入)電荷(電洞、電子),將電荷注入傳輸層分為電荷注入層(電洞注入層、電子注入層)與電荷傳輸層(電洞傳輸層、電子傳輸層),電荷注入傳輸層可僅包含以下所例示之電荷注入傳輸材料,亦可任意包含添加劑(施體、受體等)等,亦可為使該等材料分散於高分子材料(黏合用樹脂)或無機材料中之構成。 In order to more efficiently inject charges (holes, electrons) from the electrodes and transfer (inject) charges (holes, electrons) to the light-emitting layer, the charge injection transport layer is divided into charge injection layers (hole injection layers, electron injection layers). And the charge transport layer (the hole transport layer, the electron transport layer), the charge injection transport layer may include only the charge injection transport material exemplified below, and may optionally contain an additive (such as a donor, a receptor, etc.), or may be These materials are dispersed in a polymer material (adhesive resin) or an inorganic material.

作為電荷注入傳輸材料,可使用有機發光層用之公知之電荷傳輸材料。上述電荷注入傳輸材料分為電洞注入傳輸材料及電子注入傳輸材料,以下例示該等具體之化合物,但本實施形態並不限定於該等材料。 As the charge injection transport material, a known charge transport material for an organic light-emitting layer can be used. The charge injection transport material is classified into a hole injection transport material and an electron injection transport material. The specific compounds are exemplified below, but the present embodiment is not limited to these materials.

作為電洞注入電洞傳輸材料,例如可列舉:氧化釩(V2O5)、氧化鉬(MoO3)等氧化物,無機p型半導體材料,卟啉化合物,N,N'-雙(3-甲基苯基)-N,N'-雙(苯基)-聯苯胺(TPD,N,N'-Bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine)、N,N'-二(萘-1-基)-N,N'-二苯基-聯苯胺(NPD)等芳香族三級胺化合物,腙化合物,喹吖啶酮化合物,苯乙烯基胺化合物等低分子材料;聚苯胺(PANI,polyaniline)、聚苯胺-樟腦磺酸(PANI-CSA(Camphorsulfonic acid))、聚(3,4-二氧乙基噻吩)/聚苯乙烯磺酸(PEDOT(poly(3,4-ethylenedioxythiophene))/PSS(poly(styrene-4-sulfonate)))、聚(三苯胺)衍生物(Poly-TPD)、聚乙烯基咔唑(PVCz,polyvinylcarbazole)、聚(對苯乙炔)(PPV,poly(p-phenylene vinylene))、聚(對萘乙 炔)(PNV,poly(p-naphthalene vinylene))等高分子材料等。 Examples of the hole injecting hole transporting material include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 3 ), inorganic p-type semiconductor materials, porphyrin compounds, and N, N'-double (3). -Methylphenyl)-N,N'-bis(phenyl)-benzidine (TPD, N, N'-Bis(3-methylphenyl)-N, N'-bis(phenyl)-benzidine), N, Aromatic tertiary amine compounds such as N'-bis(naphthalen-1-yl)-N,N'-diphenyl-benzidine (NPD), hydrazine compounds, quinacridone compounds, styrylamine compounds, etc. Molecular materials; polyaniline (PANI, polyaniline), polyaniline-camphorsulfonic acid (PANI-CSA (Camphorsulfonic acid)), poly(3,4-dioxyethylthiophene) / polystyrenesulfonic acid (PEDOT (poly( 3,4-ethylenedioxythiophene))/PSS(poly(styrene-4-sulfonate)), poly(triphenylamine) derivative (Poly-TPD), polyvinylcarbazole (PVCz, polyvinylcarbazole), poly(p-phenylacetylene) (PPV, poly(p-phenylene vinylene), poly(p-naphthalene vinylene) (PNV, poly(p-naphthalene vinylene)) and other polymer materials.

又,就更高效地自陽極注入及傳輸電洞之方面而言,作為用作電洞注入層之材料,較佳為使用最高佔有分子軌道(HOMO,Highest Occupied Molecular Orbital)之能階低於電洞傳輸層所使用之電洞注入傳輸材料的材料,作為電洞傳輸層,較佳為使用電洞之移動率高於電洞注入層所使用之電洞注入傳輸材料的材料。 Further, as a material for the hole injection layer, it is preferable to use the highest energy occupying layer (HOMO, Highest Occupied Molecular Orbital) lower than the electric power in terms of the anode injection and the transmission hole. The material used for the hole transport layer is injected into the material of the transport material. As the hole transport layer, it is preferable to use a material having a mobility higher than that of the hole injection transport material used in the hole injection layer.

又,為了進一步提高電洞之注入及傳輸性,較佳為於上述電洞注入傳輸材料中摻雜受體。作為受體,可使用有機發光層用之公知之受體材料。。以下例示該等具體之化合物,但本實施形態並不限定於該等材料。 Further, in order to further improve the injection and transportability of the hole, it is preferable to dope the dopant in the hole injection transport material. As the acceptor, a known acceptor material for an organic light-emitting layer can be used. . The specific compounds are exemplified below, but the present embodiment is not limited to these materials.

作為受體材料,可列舉:Au、Pt、W、Ir、POCl3、AsF6、Cl、Br、I、氧化釩(V2O5)、氧化鉬(MoO3)等無機材料;TCNQ(7,7,8,8-tetracyanoquinodimethane,7,7,8,8,-四氰對醌二甲烷)、TCNQF4(Tetrafluorotetracyanoquinodimethane,四氟四氰對醌二甲烷)、TCNE(Tetracyanoethylene,四氰乙烯)、HCNB(Hexacyanobutadiene,六氰丁二烯)、DDQ(Dichloro Dicyane Benzoquinone,二氯二氰苯醌)等具有氰基之化合物,TNF(2,4,7-trinitro-9-fluorenone,三硝基茀酮)、DNF(2,7-dinitro-9-fluorenone,二硝基茀酮)等具有硝基之化合物,四氟苯醌、四氯苯醌、四溴苯醌等有機材料。 Examples of the acceptor material include inorganic materials such as Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), and molybdenum oxide (MoO 3 ); TCNQ (7) , 7,8,8-tetracyanoquinodimethane, 7,7,8,8,-tetracyanoquinone dimethane), TCNQF 4 (Tetrafluorotetracyanoquinodimethane, tetrafluorotetracyanoquinone dimethane), TCNE (Tetracyanoethylene, tetracyanoethylene), Compounds with cyano group such as HCNB (Hexacyanobutadiene, hexacyanobutadiene), DDQ (Dichloro Dicyane Benzoquinone), TNF (2,4,7-trinitro-9-fluorenone, trinitrofluorenone) ), a compound having a nitro group such as DNF (2,7-dinitro-9-fluorenone, dinitrofluorenone), an organic material such as tetrafluorophenylhydrazine, tetrachlorophenylhydrazine or tetrabromophenylhydrazine.

其中,TCNQ、TCNQF4、TCNE、HCNB、DDQ等具有氰基之化合物可更有效地增加載子濃度,因此更佳。 Among them, a compound having a cyano group such as TCNQ, TCNQF 4 , TCNE, HCNB or DDQ can increase the carrier concentration more effectively, and thus is more preferable.

作為電子注入電子傳輸材料,例如可列舉:作為n型半導體之無機材料,二唑衍生物、三唑衍生物、二氧化硫吡衍生物、苯醌衍生物、萘醌衍生物、蒽醌衍生物、聯苯醌衍生物、茀酮衍生物、苯并二呋喃衍生物等低分子材料,聚(二唑)(Poly-OXZ,Poly-oxadiazole)、聚苯乙烯衍生物(PSS)等高分子材料。尤其是作為電子注入材料,尤其可列舉:氟化鋰(LiF)、氟化鋇(BaF2)等氟化物,氧化鋰(Li2O)等氧化物等。 As the electron injecting electron transporting material, for example, an inorganic material which is an n-type semiconductor can be cited. Diazole derivatives, triazole derivatives, sulfur dioxide Low molecular materials such as derivatives, benzoquinone derivatives, naphthoquinone derivatives, anthracene derivatives, biphenyl hydrazine derivatives, anthrone derivatives, benzodifuran derivatives, poly( Polymer materials such as oxadiazole (Poly-OXZ, Poly-oxadiazole) and polystyrene derivatives (PSS). In particular, examples of the electron injecting material include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).

就更高效地自陰極注入及傳輸電子之方面而言,作為用作電子注入層之材料,較佳為使用最低未占分子軌道(LUMO,Lower Unoccupied Molecular Orbital)之能階高於電子傳輸層所使用之電子注入傳輸材料的材料,作為用作電子傳輸層之材料,較佳為使用電子之移動率高於電子注入層所使用之電子注入傳輸材料的材料。 In terms of more efficient injection and transport of electrons from the cathode, as a material for the electron injecting layer, it is preferable to use a lower unoccupied molecular orbital (LUMO) having a higher energy level than the electron transporting layer. As the material for the electron transporting layer to be used, as the material for the electron transporting layer, it is preferable to use a material having a higher electron mobility than the electron injecting and transporting material used in the electron injecting layer.

又,為了進一步提高電子之注入及傳輸性,較佳為於上述電子注入傳輸材料中摻雜施體。作為施體,可使用有機發光層用之公知之施體材料。以下例示該等具體之化合物,但本發明並不限定於該等材料。 Further, in order to further improve the injection and transportability of electrons, it is preferable to dope the above-described electron injecting and transporting material. As the donor, a known donor material for the organic light-emitting layer can be used. The specific compounds are exemplified below, but the invention is not limited to the materials.

作為施體材料,有如下者:鹼金屬,鹼土金屬,稀土類元素,Al、Ag、Cu、In等無機材料;苯胺類,苯二胺類,聯苯胺類(N,N,N',N'-四苯基聯苯胺、N,N'-雙-(3-甲基苯基)-N,N'-雙-(苯基)-聯苯胺、N,N'-二(萘-1-基)-N,N'-二苯基-聯苯胺等),三苯胺類(三苯胺、4,4',4"-三(N,N-二苯基-胺基)-三苯胺、4,4',4"-三(N-3-甲基苯基-N-苯基-胺基)-三 苯胺、4,4',4"-三(N-(1-萘基)-N-苯基-胺基)-三苯胺等)、三苯基二胺類(N,N'-二-(4-甲基-苯基)-N,N'-二苯基-1,4-苯二胺)等於骨架中含有芳香族三級胺之化合物,菲、芘、苝、蒽、稠四苯、稠五苯等縮合多環化合物(其中,縮合多環化合物可具有取代基),TTF(tetrathiafulvalene,四硫富瓦烯)類,二苯并呋喃,酚噻,咔唑等有機材料。其中,尤其是於骨架中含有芳香族三級胺之化合物、縮合多環化合物、鹼金屬可更有效地增加載子濃度,因此更佳。 As the donor material, there are the following: alkali metal, alkaline earth metal, rare earth element, inorganic materials such as Al, Ag, Cu, In; aniline, phenylenediamine, benzidine (N, N, N', N '-Tetraphenylbenzidine, N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine, N,N'-di(naphthalene-1- (), N, N'-diphenyl-benzidine, etc.), triphenylamines (triphenylamine, 4,4',4"-tris(N,N-diphenyl-amino)-triphenylamine, 4 , 4',4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine, 4,4',4"-tris(N-(1-naphthyl)-N -phenyl-amino)-triphenylamine, etc., triphenyldiamine (N,N'-di-(4-methyl-phenyl)-N,N'-diphenyl-1,4- Phenylenediamine) is equivalent to a compound containing an aromatic tertiary amine in the skeleton, a condensed polycyclic compound such as phenanthrene, anthracene, anthracene, anthracene, fused tetraphenyl or fused pentabenzene (wherein the condensed polycyclic compound may have a substituent), TTF (tetrathiafulvalene, tetrathiafulvalene), dibenzofuran, phenolthiophene , carbazole and other organic materials. Among them, a compound containing an aromatic tertiary amine in the skeleton, a condensed polycyclic compound, or an alkali metal is more preferable because it can increase the carrier concentration more effectively.

發光層、電洞傳輸層、電子傳輸層、電洞注入層及電子注入層等有機發光層可使用使上述材料溶解、分散於溶劑中而成之有機發光層形成用之塗佈液並藉由利用旋轉塗佈法、浸塗法、刮刀法、噴出塗佈法、噴塗法等塗佈法、或噴墨法、凸版印刷法、凹版印刷法、絲網印刷法、微凹版塗佈法等印刷法等之公知之濕式製程而形成,亦可將上述材料藉由電阻加熱蒸鍍法、電子束(EB,Electron-Beam)蒸鍍法、分子束磊晶(MBE,Molecular Beam Epitaxy)法、濺鍍法、有機氣相沈積(OVPD,organic vapor phase deposition)法等公知之乾式製程、或雷射轉印法等而形成。再者,於藉由濕式製程形成有機發光層之情形時,有機發光層形成用之塗佈液亦可包含調平劑、黏度調整劑等用以調整塗佈液之物性之添加劑。 The organic light-emitting layer such as the light-emitting layer, the hole transport layer, the electron transport layer, the hole injection layer, and the electron injection layer can be formed by using a coating liquid for forming an organic light-emitting layer in which the material is dissolved and dispersed in a solvent. Printing by a spin coating method, a dip coating method, a doctor blade method, a spray coating method, a spray coating method, or the like, or an inkjet method, a letterpress printing method, a gravure printing method, a screen printing method, a micro gravure coating method, or the like It is formed by a known wet process such as a method, and the above materials may be subjected to a resistance heating vapor deposition method, an electron beam (EB, Electron-Beam) vapor deposition method, or a molecular beam epitaxy (MBE) method. It is formed by a known dry process such as a sputtering method, an organic vapor phase deposition (OVPD) method, or a laser transfer method. Further, in the case where the organic light-emitting layer is formed by a wet process, the coating liquid for forming the organic light-emitting layer may further contain an additive for adjusting the physical properties of the coating liquid such as a leveling agent or a viscosity modifier.

構成上述有機發光層14之各層之膜厚通常為1 nm~1000 nm左右,較佳為10 nm~200 nm。若膜厚未達10 nm,則無法獲得原本所需之物性(電荷之注入特性、傳輸特性、封 閉特性)。又,有產生由塵土等異物引起之像素缺陷之虞。又,若膜厚超過200 nm,則有因有機發光層之電阻成分而引起驅動電壓之上升並導致消耗電力之上升之虞。 The film thickness of each of the layers constituting the organic light-emitting layer 14 is usually from about 1 nm to about 1000 nm, preferably from 10 nm to 200 nm. If the film thickness is less than 10 nm, the original physical properties (charge injection characteristics, transfer characteristics, and sealing) cannot be obtained. Closed feature). In addition, there are defects in pixels caused by foreign matter such as dust. Moreover, when the film thickness exceeds 200 nm, the driving voltage rises due to the resistance component of the organic light-emitting layer, and the power consumption increases.

將第一電極(下部電極)12劃分成複數個特定區域(例如像素)之障壁(絕緣層)15包含至少具有光反射性之材料。作為具有光反射性之材料,較佳為使用色調為白色之材料。進而,亦較佳為使用除光反射性以外亦具有光擴散性之材料。 The barrier (insulating layer) 15 that divides the first electrode (lower electrode) 12 into a plurality of specific regions (for example, pixels) contains a material having at least light reflectivity. As the material having light reflectivity, a material having a white color tone is preferably used. Further, it is also preferred to use a material having light diffusibility in addition to light reflectivity.

於僅具有光反射性之情形時,所提取之光之分佈根據障壁側面相對於基板之角度或障壁之形狀而較大地變化,因此為了獲得所期望之光分佈,亦必需將障壁側面相對於基板之角度或障壁之形狀控制為適當者。相對於此,若障壁除光反射性以外亦具有白色性、光散射性,則於障壁上反射之光之方向擴大,因此所提取之光之分佈並不那麼依存於障壁側面相對於基板之角度或障壁之形狀,易獲得自然之發光分佈。 In the case of only light reflectivity, the distribution of the extracted light varies greatly depending on the angle of the barrier side with respect to the substrate or the shape of the barrier. Therefore, in order to obtain a desired light distribution, it is necessary to face the barrier side with respect to the substrate. The angle or the shape of the barrier is controlled as appropriate. On the other hand, if the barrier has whiteness and light scattering properties in addition to the light reflectivity, the direction of the light reflected on the barrier is enlarged, so the distribution of the extracted light is not so dependent on the angle of the side of the barrier relative to the substrate. Or the shape of the barrier, easy to obtain a natural distribution of light.

作為一例,例如可利用日本專利特開2007-322546號公報、日本專利特開2008-211036號公報、日本專利特開2011-66267號公報等所揭示之高反射率之白色阻焊劑而形成障壁(絕緣層)15。或者,使TiO2等粒子分散於聚醯亞胺系或丙烯酸系等感光性樹脂中而賦予光反射性、光散射性、白色性等功能之方法亦為有效之方法。又,亦可使用含有銀(Ag)等具有反射性之金屬之樹脂而形成障壁15。 For example, a high-reflectance white solder resist disclosed in Japanese Patent Laid-Open Publication No. Hei. No. 2007-322546, Japanese Patent Laid-Open No. Hei. No. Hei. Insulation layer) 15. Alternatively, a method in which particles such as TiO 2 are dispersed in a photosensitive resin such as polyimide or acrylic to impart functions such as light reflectivity, light scattering property, and whiteness is also effective. Further, the barrier 15 may be formed using a resin containing a reflective metal such as silver (Ag).

障壁(絕緣層)15係以特定之圖案形成於透光性或非透光 性基板11之一面11a上。為了使障壁15以特定之形狀圖案化,可應用如下方法等半導體製造步驟或液晶面板製造步驟等中所使用之公知之製造方法:使用光微影法使於光感光性樹脂中添加氧化鈦粒子等而成者圖案化之方法;將於樹脂中添加氧化鈦粒子等而成者形成於整個面上,於其上形成光阻圖案,將添加有氧化鈦粒子之樹脂層蝕刻成特定之圖案的方法。 The barrier (insulating layer) 15 is formed in a specific pattern to be translucent or non-transparent. One side of the substrate 11a is 11a. In order to pattern the barrier rib 15 in a specific shape, a known manufacturing method used in a semiconductor manufacturing step, a liquid crystal panel manufacturing step, or the like, such as a method of adding titanium oxide particles to a photo-sensitive resin by photolithography, can be applied. A method of patterning the original; a titanium oxide particle or the like is added to the resin, and a photoresist pattern is formed thereon, and a resin layer to which the titanium oxide particles are added is etched into a specific pattern. method.

關於障壁15之膜厚,例如1 μm~5 μm為大致適當之範圍,可根據目的而選定適當之膜厚。例如亦可使用100 nm~數10 μm之高度之障壁,於任一情形時均可獲得本實施形態之效果。 The film thickness of the barrier 15 is, for example, 1 μm to 5 μm in a substantially suitable range, and an appropriate film thickness can be selected depending on the purpose. For example, a barrier of a height of 100 nm to 10 μm can be used, and the effect of this embodiment can be obtained in either case.

於藉由障壁15反射自有機發光層14發出之光之前,反覆進行全反射,每次全反射時均產生光損失之情況欠佳,因此相互鄰接之障壁15彼此之間隔(開口直徑)較佳為不過大。鄰接之障壁15彼此之間隔為50 mm、20 mm、10 mm、5 mm、1 mm、500 μm、100 μm、50 μm、20 μm等。 Before the light emitted from the organic light-emitting layer 14 is reflected by the barrier 15 , the total reflection is repeated, and the light loss is poor in each total reflection. Therefore, the barriers 15 adjacent to each other (opening diameter) are preferably spaced apart from each other. Not too big. Adjacent barriers 15 are spaced from each other by 50 mm, 20 mm, 10 mm, 5 mm, 1 mm, 500 μm, 100 μm, 50 μm, 20 μm, and the like.

於使障壁15具有光散射性之情形時,較佳為使微細之光反射性粒子分散於構成障壁15之樹脂中。光反射性粒子之粒徑較佳為200 nm~5 μm。藉此,障壁15可具有光反射性,並且亦可具有使光之反射方向變得無規之光散射性。 When the barrier 15 is light-scattering, it is preferable to disperse fine light-reflecting particles in the resin constituting the barrier 15 . The particle diameter of the light-reflective particles is preferably from 200 nm to 5 μm. Thereby, the barrier 15 can have light reflectivity, and can also have light scattering properties that cause the direction of reflection of light to become random.

又,障壁15亦發揮防止第一電極(下部電極)12之邊緣部分之漏電的作用。即,於在第一電極12上形成有機發光層14之情形時,於第一電極12之端面上有機發光層14之膜厚變薄。因此,於第一電極12與第二電極13之間易發生短 路。藉由將障壁15配置於上述區域,可防止短路。於該情形時,障壁15成為通常稱作邊緣罩、或絕緣層等之構成物。 Further, the barrier 15 also functions to prevent leakage of the edge portion of the first electrode (lower electrode) 12. That is, in the case where the organic light-emitting layer 14 is formed on the first electrode 12, the film thickness of the organic light-emitting layer 14 is thinned on the end surface of the first electrode 12. Therefore, it is easy to occur between the first electrode 12 and the second electrode 13 road. By arranging the barrier rib 15 in the above region, it is possible to prevent a short circuit. In this case, the barrier rib 15 is a constituent generally referred to as an edge cover or an insulating layer.

又,於藉由噴墨等濕式製程而形成有機發光層14之情形時,障壁15亦防止於基板11所具有之像素區域塗佈之液體流向鄰接之像素區域。為了進一步提高上述功能,亦較佳為對障壁15進而實施對其賦予撥液性之處理。 Further, in the case where the organic light-emitting layer 14 is formed by a wet process such as inkjet, the barrier 15 prevents the liquid applied to the pixel region of the substrate 11 from flowing to the adjacent pixel region. In order to further improve the above functions, it is also preferable to carry out a treatment for imparting liquid repellency to the barrier rib 15 .

構成有機層14之各層對於水分或氧之耐性較弱,一般而言必需進行密封。密封構造已知有多種,例如有重疊於第二電極(上部電極)上而直接形成絕緣膜之構造。於該情形時,作為絕緣膜,可使用SiO2等之無機膜、聚醯亞胺樹脂等之有機膜、無機-有機混合膜、無機-有機交互積層膜等。 The layers constituting the organic layer 14 are weak against moisture or oxygen, and it is generally necessary to perform sealing. There are various types of sealing structures known, for example, a structure in which an insulating film is directly formed by being superposed on a second electrode (upper electrode). In this case, as the insulating film, an inorganic film such as SiO 2 , an organic film such as a polyimide resin, an inorganic-organic mixed film, an inorganic-organic interactive laminated film, or the like can be used.

對如上所述之構成之發光裝置之作用進行說明。 The action of the light-emitting device having the above configuration will be described.

如圖1所示,若於發光裝置10之第一電極(下部電極)12與第二電極(上部電極)13之間施加特定電壓值之電壓,則藉由利用注入至有機發光層14中之電子與電洞之再結合所產生之激子(exciton)而使有機發光層14發光。 As shown in FIG. 1, when a voltage of a specific voltage value is applied between the first electrode (lower electrode) 12 and the second electrode (upper electrode) 13 of the light-emitting device 10, it is injected into the organic light-emitting layer 14 by using The organic light-emitting layer 14 emits light by exciton generated by recombination of electrons and holes.

有機發光層14所發出之光(激發光)之中,沿朝向透明之第二電極(上部電極)13之方向射出之光F1透過第二電極13而射出至外部。 Among the light (excitation light) emitted from the organic light-emitting layer 14, the light F1 emitted in the direction toward the transparent second electrode (upper electrode) 13 passes through the second electrode 13 and is emitted to the outside.

又,有機發光層14所發出之光(激發光)之中,沿朝向非透光性第一電極(下部電極)12之方向射出之光F2於第一電極13之表面反射,再次透過有機發光層14,透過透明之第 二電極13而射出至外部。 Further, among the light (excitation light) emitted from the organic light-emitting layer 14, the light F2 emitted in the direction toward the non-transmissive first electrode (lower electrode) 12 is reflected on the surface of the first electrode 13, and is again transmitted through the organic light. Layer 14, through the transparent The two electrodes 13 are emitted to the outside.

另一方面,有機發光層14所發出之光(激發光)之中,沿面擴展方向(與積層方向垂直之方向)射出之光F3射入障壁15。射入障壁15之光由於障壁15包含具有光反射性之材料,故而使所射入之光反射、且較佳為使其擴散。並且,障壁15所反射之光F3亦透過第二電極13而射出至外部。 On the other hand, among the light (excitation light) emitted from the organic light-emitting layer 14, the light F3 emitted in the plane spreading direction (the direction perpendicular to the stacking direction) enters the barrier rib 15. Since the light entering the barrier 15 includes a material having light reflectivity, the light incident thereon is reflected and preferably diffused. Further, the light F3 reflected by the barrier 15 is also transmitted to the outside through the second electrode 13.

如此,藉由本實施形態之發光裝置10,由於障壁15具有光反射性,故而射出至障壁15之光F3不會被障壁15吸收、或於障壁15內導波而損失。並且,射出至障壁15之光F3經障壁15反射而經由第二電極13射出至外部,藉此可大幅度提高光提取效率。 As described above, in the light-emitting device 10 of the present embodiment, since the barrier 15 has light reflectivity, the light F3 emitted to the barrier 15 is not absorbed by the barrier 15 or guided by the barrier 15 and is lost. Further, the light F3 emitted to the barrier 15 is reflected by the barrier 15 and emitted to the outside via the second electrode 13, whereby the light extraction efficiency can be greatly improved.

即,先前之發光裝置之構想係藉由有機發光層之折射率或散射性、或形狀之控制而提高光提取效率,相對於此,於本實施形態中,將有機發光層所發出之光封閉於由障壁15所圍成之區域內而使光不沿著障壁15之方向傳播。藉由上述構成,可將光之射出僅限定於欲提取光之方向,於不損失光之情況下高效地提取。藉此,與先前已知之發光裝置相比,可大幅度提高光提取效率。 That is, the concept of the conventional light-emitting device is to improve the light extraction efficiency by controlling the refractive index or scattering property or shape of the organic light-emitting layer. In contrast, in the present embodiment, the light emitted by the organic light-emitting layer is enclosed. Light is not propagated in the direction of the barrier 15 in the area surrounded by the barrier 15 . According to the above configuration, the light emission can be limited only to the direction in which the light is to be extracted, and can be efficiently extracted without losing light. Thereby, the light extraction efficiency can be greatly improved as compared with the previously known light-emitting device.

再者,障壁15更佳為包含如下材料:該材料必需具有光反射性,進而具有非單向反射之漫反射性、散射性而並非單向反射。與單向反射相比,漫反射、散射者使射入障壁15之光朝無規之方向反射,因此進一步提高光之提取效率。 Further, the barrier 15 preferably further comprises a material which is required to have light reflectivity and further has diffuse reflectivity and scattering of non-unidirectional reflection instead of unidirectional reflection. Compared with the one-way reflection, the diffuse reflection and the scatterer reflect the light incident on the barrier rib 15 in a random direction, thereby further improving the light extraction efficiency.

又,配置障壁15之位置理想而言較佳為由障壁15覆蓋以 特定形狀圖案化之第一電極(下部電極)12之周邊全部。然而,即便障壁15僅覆蓋其一部分,亦可獲得光提取效率之提高效果。其中,相對於第一電極(下部電極)12之周邊長度,例如於僅對1%之長度配置光反射性障壁之情形時,光自剩餘之99%之長度部分沿面擴展方向導波而損失,光提取效率之提高效果有限。 Further, it is preferable that the position of the barrier rib 15 is covered by the barrier rib 15 The periphery of the first electrode (lower electrode) 12 patterned in a specific shape is all. However, even if the barrier 15 covers only a part thereof, an effect of improving the light extraction efficiency can be obtained. In the case where the light-reflective barrier is disposed only for the length of the first electrode (lower electrode) 12, for example, when the light-reflective barrier is disposed for only 1% of the length, the light is guided from the remaining 99% of the length in the surface expansion direction and is lost. The effect of improving light extraction efficiency is limited.

關於有機發光層14所發出之光或沿面擴展方向導波而擴散、或者經光反射性障壁15反射而自基板11側被提取之問題,係與配置有障壁15之長度相對於第一電極12之周邊長度的比率有關。例如若假設未使用光反射性障壁之情形時之光提取效率為25%,則損失部分成為75%。若配置有障壁15之長度相對於第一電極12之周邊長度的比率為10%,則以概算計可提取約7.5%之光,合計光提取效率成為32.5%,相對於未形成光反射性障壁15之情形時之提取效率25%,效率提高約30%。 The problem that the light emitted from the organic light-emitting layer 14 is diffused by the guided wave in the surface expansion direction or is reflected from the substrate 11 side by the light-reflective barrier 15 is associated with the length of the barrier 15 disposed with respect to the first electrode 12 . The ratio of the length of the perimeter is related. For example, if the light extraction efficiency is 25% in the case where the light reflective barrier is not used, the loss portion becomes 75%. If the ratio of the length of the barrier 15 to the peripheral length of the first electrode 12 is 10%, about 7.5% of the light can be extracted by the estimated amount, and the total light extraction efficiency is 32.5%, which is relative to the non-reflective barrier. In the case of 15, the extraction efficiency is 25%, and the efficiency is increased by about 30%.

然而,若配置有障壁15之長度相對於第一電極12之周邊長度的比率為1%,則光提取最大僅提高0.75%,合計光提取效率僅為25.75%。其相對於未設置光反射性障壁15之情形時之光提取效率25%,僅為3%,所獲得之效果非常小。 However, if the ratio of the length of the barrier rib 15 to the peripheral length of the first electrode 12 is 1%, the light extraction is increased by only 0.75% at the maximum, and the total light extraction efficiency is only 25.75%. The light extraction efficiency is 25% with respect to the case where the light-reflective barrier 15 is not provided, and is only 3%, and the effect obtained is very small.

就上述觀點而言,配置有障壁15之長度相對於第一電極(下部電極)12之周邊長度的比率理想而言為100%,若為約5%以上,則獲得相應之光提取效率之提高效果。 From the above viewpoints, the ratio of the length of the barrier 15 disposed to the peripheral length of the first electrode (lower electrode) 12 is desirably 100%, and if it is about 5% or more, the corresponding light extraction efficiency is improved. effect.

於配置有障壁15之長度相對於第一電極12之周邊長度的比率為5%之情形時,藉由光反射性障壁15所提取之光最 大為3.75%(75%×5%),合計成為27.75%。其相對於未設置光反射性障壁15之情形時之光提取效率25%而為提高15%,可謂有意義之改善。 When the ratio of the length of the barrier 15 to the peripheral length of the first electrode 12 is 5%, the light extracted by the light reflective barrier 15 is the most It is 3.75% (75% × 5%), which is a total of 27.75%. This is a 15% improvement in the light extraction efficiency of 25% in the case where the light-reflective barrier 15 is not provided, which is a significant improvement.

其中,由於實質上存在其他構成部之光損失、或基板11內之導波所引起之損失等,故而較佳為配置有光反射性障壁15之長度相對於第一電極12之周邊長度的比率較佳為50%以上,尤佳為設為100%。 However, since the light loss of the other constituent portion or the loss due to the guided wave in the substrate 11 is substantially present, it is preferable to arrange the ratio of the length of the light reflective barrier 15 to the peripheral length of the first electrode 12. It is preferably 50% or more, and particularly preferably 100%.

關於將配置有障壁15之長度相對於第一電極12之周邊長度的比率設為多少之問題,例如可根據使障壁15圖案化時之形狀而決定。 The problem of the ratio of the length of the barrier 15 disposed to the peripheral length of the first electrode 12 is determined, for example, according to the shape when the barrier 15 is patterned.

若於通常情況下考慮,則利用障壁15覆蓋第一電極12之所有周邊毫不困難,若亦考慮抑制第二電極13與第一電極12之間的漏電、及防止於利用濕式製程形成之情形時塗佈液流向鄰接像素之觀點,則較佳為利用光反射性障壁15覆蓋第一電極(下部電極)12之所有周邊。 If it is considered in the usual case, it is not difficult to cover all the periphery of the first electrode 12 by the barrier 15 , and it is also considered to suppress leakage between the second electrode 13 and the first electrode 12 and to prevent formation by a wet process. In the case where the coating liquid flows toward the adjacent pixels, it is preferable to cover all the periphery of the first electrode (lower electrode) 12 by the light reflective barrier 15 .

又,為了確保可靠性,發光裝置10較佳為利用適當之方法將周圍密封。密封之方法可使用公知之方法等。例如可列舉:使用罐密封與乾燥劑之方法、使用蓋封玻璃與乾燥劑之方法、玻璃料密封、以抑制透濕性之膜與玻璃貼合之方法等。 Further, in order to ensure reliability, the light-emitting device 10 is preferably sealed by a suitable method. A known method or the like can be used for the method of sealing. For example, a method of using a can seal and a desiccant, a method of sealing a glass and a desiccant, a method of sealing a glass frit, a method of bonding a film for suppressing moisture permeability, and a glass may be mentioned.

又,發光裝置10亦可於第二電極13與有機發光層14之間具有低折射率層。例如由具有低於有機發光層14之折射率且高於第二電極13之折射率之範圍的折射率之材料所形成。低折射率層例如較佳為具有如使自有機發光層14朝向 低折射率層射入之入射光之臨界角變得小於自低折射率層射出至第二電極13之出射光之臨界角的折射率。再者,低折射率層具有電荷注入及電荷傳輸之功能。藉由形成上述低折射率層,可進一步提高光提取效率。 Further, the light-emitting device 10 may have a low refractive index layer between the second electrode 13 and the organic light-emitting layer 14. For example, it is formed of a material having a refractive index lower than that of the organic light-emitting layer 14 and higher than the refractive index of the second electrode 13. The low refractive index layer is preferably, for example, such that it is oriented from the organic light-emitting layer 14 The critical angle of the incident light incident on the low refractive index layer becomes smaller than the refractive index from the critical angle of the outgoing light of the low refractive index layer to the second electrode 13. Furthermore, the low refractive index layer has a function of charge injection and charge transfer. By forming the above low refractive index layer, the light extraction efficiency can be further improved.

(發光裝置:第二實施形態) (Light-emitting device: second embodiment)

圖2係表示第二實施形態之發光裝置之概略剖面圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device of a second embodiment.

發光裝置20具有透光性或非透光性基板21、第一電極(下部電極)22、透明之第二電極(上部電極)23、及有機發光層24。第一電極(下部電極)22、第二電極(上部電極)23依序積層於基板21之一面21a上。有機發光層24形成於第一電極22及第二電極23之間。又,於基板21之一面21a上形成有將第一電極22劃分成複數個特定區域的光反射性障壁(絕緣層)25。 The light-emitting device 20 has a light-transmitting or non-transmissive substrate 21, a first electrode (lower electrode) 22, a transparent second electrode (upper electrode) 23, and an organic light-emitting layer 24. The first electrode (lower electrode) 22 and the second electrode (upper electrode) 23 are sequentially laminated on one surface 21a of the substrate 21. The organic light emitting layer 24 is formed between the first electrode 22 and the second electrode 23. Further, a light reflective barrier (insulating layer) 25 that divides the first electrode 22 into a plurality of specific regions is formed on one surface 21a of the substrate 21.

本實施形態之有機發光層24之構成與第一實施形態之有機發光層14不同。其他構成與第一實施形態相同,因此省略其說明。 The configuration of the organic light-emitting layer 24 of the present embodiment is different from that of the organic light-emitting layer 14 of the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

並且,於該實施形態中,將有機發光層24例如分隔成各像素而形成。即,於第一實施形態中,有機發光層14係覆蓋障壁15而形成為連續層(參照圖1),於第二實施形態中,有機發光層24係由障壁25之上部(第二電極側)分隔而分割成複數個。藉此,可將於有機發光層24中傳播而向面擴展方向傳播之光遮斷,進一步提高光提取效率。 Further, in this embodiment, the organic light-emitting layer 24 is formed by, for example, dividing into pixels. That is, in the first embodiment, the organic light-emitting layer 14 is formed as a continuous layer by covering the barrier 15 (see FIG. 1). In the second embodiment, the organic light-emitting layer 24 is formed by the upper portion of the barrier 25 (second electrode side). ) Separated into multiples. Thereby, light propagating in the organic light-emitting layer 24 and propagating in the surface expansion direction can be blocked, and the light extraction efficiency can be further improved.

(發光裝置:第三實施形態) (Light-emitting device: third embodiment)

圖3係表示第三實施形態之發光裝置之概略剖面圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device of a third embodiment.

發光裝置30具有透光性或非透光性基板31、第一電極(下部電極)32、透明之第二電極(上部電極)33、及有機發光層34。第一電極(下部電極)32、第二電極(上部電極)33依序積層於基板31之一面31a上。有機發光層34形成於第一電極32及第二電極33之間。又,於基板31之一面31a上形成有將第一電極32、及有機發光層34劃分成複數個特定區域的光反射性障壁(絕緣層)35。 The light-emitting device 30 has a light-transmitting or non-transmissive substrate 31, a first electrode (lower electrode) 32, a transparent second electrode (upper electrode) 33, and an organic light-emitting layer 34. The first electrode (lower electrode) 32 and the second electrode (upper electrode) 33 are sequentially laminated on one surface 31a of the substrate 31. The organic light emitting layer 34 is formed between the first electrode 32 and the second electrode 33. Further, a light-reflective barrier (insulating layer) 35 that divides the first electrode 32 and the organic light-emitting layer 34 into a plurality of specific regions is formed on one surface 31a of the substrate 31.

本實施形態之有機發光層34之構成與第一實施形態之有機發光層14不同。其他構成與第一實施形態相同,因此省略其說明。 The configuration of the organic light-emitting layer 34 of the present embodiment is different from that of the organic light-emitting layer 14 of the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於該實施形態中,有機發光層34例如由障壁35劃分成各像素。即,於第一實施形態中,有機發光層14覆蓋障壁15而形成為連續層(參照圖1),於第三實施形態中,有機發光層24由障壁35劃分成複數個。藉此,可將於有機發光層24中傳播而向面擴展方向傳播之光遮斷,且自有機發光層24之側剖面(厚度方向之剖面)射出之光亦可由光反射性障壁35反射,可進一步提高光提取效率。 In this embodiment, the organic light-emitting layer 34 is divided into pixels by, for example, the barrier ribs 35. That is, in the first embodiment, the organic light-emitting layer 14 is formed as a continuous layer by covering the barrier rib 15 (see FIG. 1). In the third embodiment, the organic light-emitting layer 24 is divided into a plurality of barrier ribs 35. Thereby, the light propagating in the organic light-emitting layer 24 and propagating in the surface expansion direction can be blocked, and the light emitted from the side cross section (the cross section in the thickness direction) of the organic light-emitting layer 24 can also be reflected by the light-reflective barrier 35. The light extraction efficiency can be further improved.

再者,於該等第二實施形態或第三實施形態中,作為將有機發光層24、34之形成區域限定於特定範圍內而形成之方法,例如只要適當採用使用藉由遮罩蒸鍍法、噴墨法、印刷等之濕式法的分塗,LITI(Laser Induced Thermal Imaging,雷射誘導熱成像)、LIPS(laser Induced Pattern wise Sublimation,雷射誘導圖案昇華)等使用雷射之方法,光漂白法等方法即可。 In the second embodiment or the third embodiment, the method of forming the regions in which the organic light-emitting layers 24 and 34 are formed within a specific range is, for example, a mask evaporation method. Laser coating, printing, etc., wet coating, LITI (Laser Induced Thermal Imaging), LIPS (laser Induced Pattern wise Sublimation), etc. A photobleaching method or the like can be used.

(發光裝置:第四實施形態) (Light-emitting device: fourth embodiment)

圖4係表示第四實施形態之發光裝置之概略剖面圖。 Fig. 4 is a schematic cross-sectional view showing a light-emitting device of a fourth embodiment.

發光裝置40具有透光性或非透光性基板41、第一電極(下部電極)42、透明之第二電極(上部電極)43、及有機發光層44。第一電極(下部電極)42、及第二電極(上部電極)43依序積層於基板41之一面41a上。有機發光層44形成於第一電極42及第二電極43之間。又,於基板41之一面41a上形成有將第一電極42劃分成複數個特定區域的光反射性障壁(絕緣層)45。並且,以覆蓋第二電極(上部電極)43之方式形成有低折射率層46。 The light-emitting device 40 has a light-transmitting or non-transmissive substrate 41, a first electrode (lower electrode) 42, a transparent second electrode (upper electrode) 43, and an organic light-emitting layer 44. The first electrode (lower electrode) 42 and the second electrode (upper electrode) 43 are sequentially laminated on one surface 41a of the substrate 41. The organic light-emitting layer 44 is formed between the first electrode 42 and the second electrode 43. Further, a light reflective barrier (insulating layer) 45 that divides the first electrode 42 into a plurality of specific regions is formed on one surface 41a of the substrate 41. Further, a low refractive index layer 46 is formed to cover the second electrode (upper electrode) 43.

本實施形態之發光裝置40於具有低折射率層46之方面及有機發光層44之構成與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 40 of the present embodiment differs from the first embodiment in that it has the low refractive index layer 46 and the organic light-emitting layer 44. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

低折射率層46例如係由具有低於第二電極(上部電極)43之折射率且高於空氣(外氣)之折射率之範圍的折射率之材料所形成。低折射率層46例如較佳為具有如使自第二電極43朝向低折射率層46射入之入射光之臨界角變得小於自低折射率層46射出至外部之出射光之臨界角的折射率。 The low refractive index layer 46 is formed, for example, of a material having a refractive index lower than that of the second electrode (upper electrode) 43 and higher than the refractive index of air (outer gas). The low refractive index layer 46 preferably has, for example, a critical angle such that incident light incident from the second electrode 43 toward the low refractive index layer 46 becomes smaller than a critical angle of outgoing light emitted from the low refractive index layer 46 to the outside. Refractive index.

低折射率層46例如係由具有低於第二電極(上部電極)43之折射率且高於空氣(外氣)之折射率之範圍的折射率之材料所形成。低折射率層之折射率較佳為低於基板之折射率,理想的是與空氣之折射率相同,最佳為1.0。 The low refractive index layer 46 is formed, for example, of a material having a refractive index lower than that of the second electrode (upper electrode) 43 and higher than the refractive index of air (outer gas). The refractive index of the low refractive index layer is preferably lower than the refractive index of the substrate, and is desirably the same as the refractive index of air, and is preferably 1.0.

藉由形成上述低折射率層46,可進一步提高光提取效率。即,於假設空氣(外氣)之折射率為1.0、第二電極(上 部電極)43之折射率為1.5時,於未設置低折射率層46之情形時,自有機發光層發出之光自基板直接進入至空氣(外氣)界面,但由於第二電極(上部電極)與空氣(外氣)之界面上之折射率差,自法線偏離之角度大於42°之光發生全反射。 By forming the above-described low refractive index layer 46, the light extraction efficiency can be further improved. That is, assume that the refractive index of air (outer gas) is 1.0, the second electrode (on When the refractive index of the portion electrode 43 is 1.5, when the low refractive index layer 46 is not provided, the light emitted from the organic light-emitting layer directly enters the air (outside air) interface from the substrate, but the second electrode (the upper electrode) The difference in refractive index at the interface with air (outside air), the total deviation from the normal deviation from the normal angle of light greater than 42 °.

相對於此,如圖4所示,例如於設置折射率為1.2之低折射率層46之情形時,於低折射率層46與空氣(外氣)之界面上,自法線偏離之角度大於53°之光發生全反射,但發生反射之光由光反射性障壁45等反射而被提取至外部之可能性提高。即便於圖4所示之實施形態中,於低折射率層46與空氣(外氣)之界面上,自法線偏離之角度為42°~53°之光發生全反射而未被提取,但就自有機發光層44發出之光之角度而言,僅42°~53°之光未被提取,藉由形成低折射率層46而產生之光提取效率之提高效果較大。 On the other hand, as shown in FIG. 4, for example, in the case where the low refractive index layer 46 having a refractive index of 1.2 is provided, the angle from the normal deviation at the interface between the low refractive index layer 46 and the air (outer gas) is larger than The light of 53° is totally reflected, but the light that is reflected is reflected by the light-reflective barrier 45 or the like and is extracted to the outside. That is, in the embodiment shown in FIG. 4, at the interface between the low refractive index layer 46 and the air (outer air), the light which is off from the normal angle of the angle of 42° to 53° is totally reflected and not extracted, but In terms of the light emitted from the organic light-emitting layer 44, light of only 42 to 53 is not extracted, and the effect of improving the light extraction efficiency by forming the low refractive index layer 46 is large.

再者,於未設置光反射性障壁而僅形成低折射率層46之情形時,於第二電極43與低折射率層46之界面跳回之光反覆進行單向反射而於面擴展方向上擴散,光提取效率並未那麼提高。因此,藉由組合使用光反射性障壁45與低折射率層46,可獲得光提取效率之大幅度之提高效果。 Further, when the light reflective barrier is not provided and only the low refractive index layer 46 is formed, the light jumped back at the interface between the second electrode 43 and the low refractive index layer 46 is unidirectionally reflected in the plane expansion direction. Diffusion, light extraction efficiency is not so improved. Therefore, by using the light-reflective barrier 45 and the low-refractive-index layer 46 in combination, a large effect of improving the light extraction efficiency can be obtained.

(發光裝置:第五實施形態) (Light-emitting device: fifth embodiment)

圖5係表示第五實施形態之發光裝置之概略剖面圖。 Fig. 5 is a schematic cross-sectional view showing a light-emitting device of a fifth embodiment.

發光裝置50具有透光性或非透光性基板51、第一電極(下部電極)52、透明之第二電極(上部電極)53、及有機發光層54。第一電極(下部電極)52、及透明之第二電極(上部 電極)53依序積層於基板51之一面51a上。有機發光層54形成於第一電極52及第二電極53之間。又,於基板51之一面51a上形成有將第一電極52劃分成複數個特定區域的光反射性障壁(絕緣層)55。並且,以重疊於第二電極(上部電極)53上之方式形成有低折射率層56。 The light-emitting device 50 has a light-transmitting or non-transmissive substrate 51, a first electrode (lower electrode) 52, a transparent second electrode (upper electrode) 53, and an organic light-emitting layer 54. First electrode (lower electrode) 52, and transparent second electrode (upper part The electrodes 53 are sequentially laminated on one surface 51a of the substrate 51. The organic light emitting layer 54 is formed between the first electrode 52 and the second electrode 53. Further, a light reflective barrier (insulating layer) 55 that divides the first electrode 52 into a plurality of specific regions is formed on one surface 51a of the substrate 51. Further, a low refractive index layer 56 is formed so as to be superposed on the second electrode (upper electrode) 53.

本實施形態之發光裝置50於有機發光層54之構成、及具有低折射率層56之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 50 of the present embodiment is different from the first embodiment in the configuration of the organic light-emitting layer 54 and the low refractive index layer 56. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於該實施形態中,低折射率層56例如被劃分成各像素。即,於第四實施形態中,低折射率層46覆蓋第二電極(上部電極)43整體而形成為連續層(參照圖4),於第五實施形態中,低折射率層56被劃分成複數個。藉此,可將自低折射率層56沿面擴展方向傳播之光遮斷,進一步提高光提取效率。 In this embodiment, the low refractive index layer 56 is divided into, for example, individual pixels. That is, in the fourth embodiment, the low refractive index layer 46 covers the entire second electrode (upper electrode) 43 and is formed as a continuous layer (see Fig. 4). In the fifth embodiment, the low refractive index layer 56 is divided into Multiple. Thereby, light propagating from the low refractive index layer 56 in the surface expansion direction can be blocked, and the light extraction efficiency can be further improved.

(發光裝置:第六實施形態) (Light-emitting device: sixth embodiment)

圖6係表示第六實施形態之發光裝置之概略剖面圖。 Fig. 6 is a schematic cross-sectional view showing a light-emitting device of a sixth embodiment.

發光裝置60具有透光性或非透光性基板61、第一電極(下部電極)62、透明之第二電極(上部電極)63、及有機發光層64。第一電極(下部電極)62、及透明之第二電極(上部電極)63依序積層於基板61之一面61a上。有機發光層64形成於該第一電極62及第二電極63之間。又,於基板61之一面61a上形成有將第一電極62劃分成複數個特定區域的光反射性障壁(絕緣層)65。 The light-emitting device 60 has a light-transmitting or non-transmissive substrate 61, a first electrode (lower electrode) 62, a transparent second electrode (upper electrode) 63, and an organic light-emitting layer 64. The first electrode (lower electrode) 62 and the transparent second electrode (upper electrode) 63 are sequentially laminated on one surface 61a of the substrate 61. The organic light emitting layer 64 is formed between the first electrode 62 and the second electrode 63. Further, a light reflective barrier (insulating layer) 65 that divides the first electrode 62 into a plurality of specific regions is formed on one surface 61a of the substrate 61.

本實施形態之發光裝置60於具有接合層66及對向基板67 之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 60 of the present embodiment has a bonding layer 66 and a counter substrate 67. This aspect is different from the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)63上並經由接合層66而形成對向基板(密封基板)67。有機發光層64對於水分或氧之耐性較弱,一般而言必需進行密封。密封構造已知有多種,例如有重疊於第二電極(上部電極)上而直接形成密封膜之構造。於該情形時,作為密封膜,可使用SiO2等之無機膜、聚醯亞胺樹脂等之有機膜、無機-有機混合膜、無機-有機交互積層膜等。然而,最近如本實施形態般經由接合層66而形成對向基板(密封基板)67之情形正成為主流。 The counter substrate (sealing substrate) 67 is formed to overlap the second electrode (upper electrode) 63 and via the bonding layer 66. The organic light-emitting layer 64 is weak against moisture or oxygen, and it is generally necessary to perform sealing. There are various types of sealing structures known, for example, a structure in which a sealing film is directly formed by being superposed on a second electrode (upper electrode). In this case, as the sealing film, an inorganic film such as SiO 2 , an organic film such as a polyimide resin, an inorganic-organic mixed film, an inorganic-organic interactive laminated film, or the like can be used. However, the case where the counter substrate (sealing substrate) 67 is formed via the bonding layer 66 as in the present embodiment has recently become mainstream.

對向基板(密封基板)67必需為透光性,例如可應用玻璃、膜等硬質之透明基板。接合層66只要為透光性之固體層、例如無機膜與樹脂膜之積層體即可。又,接合層66亦較佳為空氣層、乾燥氮氣層等氣體層、或減壓氣體層、真空層等。於將接合層66設為氣體層之情形時,只要於對向基板(密封基板)67與第二電極(上部電極)63之間夾入例如間隔件等以保持特定之間隔並於邊緣部分進行密封即可。 The counter substrate (sealing substrate) 67 must be translucent, and for example, a hard transparent substrate such as glass or film can be applied. The bonding layer 66 may be a transparent solid layer, for example, a laminate of an inorganic film and a resin film. Further, the bonding layer 66 is also preferably a gas layer such as an air layer or a dry nitrogen gas layer, a vacuum gas layer, a vacuum layer or the like. In the case where the bonding layer 66 is a gas layer, for example, a spacer or the like is interposed between the opposite substrate (sealing substrate) 67 and the second electrode (upper electrode) 63 to maintain a specific interval and to be performed at the edge portion. Seal it.

於上述實施形態中,由於以重疊於第二電極(上部電極)63上之方式進而形成有對向基板(密封基板)67,故而可保護對於水分或氧之耐性較弱之有機發光層64免受外氣(空氣)中所含之濕氣或氧之侵害,防止有機發光層64之劣化。 In the above embodiment, the counter substrate (sealing substrate) 67 is further formed so as to be superposed on the second electrode (upper electrode) 63. Therefore, the organic light-emitting layer 64 having weak resistance to moisture or oxygen can be protected. The deterioration of the organic light-emitting layer 64 is prevented by the moisture or oxygen contained in the outside air (air).

(發光裝置:第七實施形態) (Light-emitting device: seventh embodiment)

圖7係表示第七實施形態之發光裝置之概略剖面圖。 Fig. 7 is a schematic cross-sectional view showing a light-emitting device of a seventh embodiment.

發光裝置70具有透光性或非透光性基板71、第一電極(下部電極)72、透明之第二電極(上部電極)73、及有機發光層74。第一電極(下部電極)72、及透明之第二電極(上部電極)73依序積層於該基板71之一面71a上。有機發光層74形成於第一電極72及第二電極73之間。又,於基板71之一面71a上形成有將第一電極72及有機發光層74劃分成複數個特定區域的光反射性障壁(絕緣層)75。 The light-emitting device 70 has a light-transmitting or non-transmissive substrate 71, a first electrode (lower electrode) 72, a transparent second electrode (upper electrode) 73, and an organic light-emitting layer 74. The first electrode (lower electrode) 72 and the transparent second electrode (upper electrode) 73 are sequentially laminated on one surface 71a of the substrate 71. The organic light emitting layer 74 is formed between the first electrode 72 and the second electrode 73. Further, a light reflective barrier (insulating layer) 75 that divides the first electrode 72 and the organic light-emitting layer 74 into a plurality of specific regions is formed on one surface 71a of the substrate 71.

本實施形態之發光裝置70於具有接合層86、對向基板87、及低折射率層88之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 70 of the present embodiment is different from the first embodiment in that it has the bonding layer 86, the counter substrate 87, and the low refractive index layer 88. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)73上並經由接合層76而形成對向基板(密封基板)77。又,於接合層76與第二電極(上部電極)73之間形成有低折射率層78。低折射率層78例如係由折射率低於對向基板(密封基板)77之折射率的材料所形成。 The counter substrate (sealing substrate) 77 is formed by being superposed on the second electrode (upper electrode) 73 and via the bonding layer 76. Further, a low refractive index layer 78 is formed between the bonding layer 76 and the second electrode (upper electrode) 73. The low refractive index layer 78 is formed, for example, of a material having a refractive index lower than that of the opposite substrate (sealing substrate) 77.

藉此,可進一步提高光提取效率。即,於假設空氣(外氣)之折射率為1.0、對向基板(密封基板)77之折射率為1.5時,於未設置低折射率層78之情形時,自有機發光層發出之光自基板直接進入至空氣(外氣)界面,但由於對向基板(密封基板)與空氣(外氣)之界面上之折射率差,故而自法線偏離之角度大於42°之光發生全反射。 Thereby, the light extraction efficiency can be further improved. That is, when the refractive index of the air (outer gas) is 1.0 and the refractive index of the counter substrate (sealing substrate) 77 is 1.5, when the low refractive index layer 78 is not provided, the light emitted from the organic light emitting layer is self-generated. The substrate directly enters the air (outer air) interface, but due to the difference in refractive index at the interface between the counter substrate (sealing substrate) and the air (outer air), the light that is deflected from the normal angle by more than 42° is totally reflected.

相對於此,如圖7所示,例如於設置折射率為1.2之低折射率層78之情形時,於對向基板(密封基板)77與空氣(外氣)之界面上,自法線偏離之角度大於53°之光發生全反 射,但發生反射之光由光反射性障壁75等反射而被提取至外部之可能性提高。即便於圖7所示之實施形態中,於對向基板(密封基板)77與空氣(外氣)之界面上,自法線偏離之角度為42°~53°之光發生全反射而未被提取,但就自有機發光層74發出之光之角度而言,僅42°~53°之光未被提取,藉由形成低折射率層78之光提取效率之提高效果較大。 On the other hand, as shown in FIG. 7, for example, when the low refractive index layer 78 having a refractive index of 1.2 is provided, the interface from the counter substrate (sealing substrate) 77 and the air (outer gas) deviates from the normal line. When the angle is greater than 53°, the light is completely reversed. The light is emitted, but the light that is reflected is reflected by the light-reflective barrier 75 or the like and is extracted to the outside. That is, in the embodiment shown in FIG. 7, in the interface between the counter substrate (sealing substrate) 77 and the air (outer air), the light which is deviated from the normal angle by 42° to 53° is totally reflected and is not Although the light is extracted from the angle of the light emitted from the organic light-emitting layer 74, only light of 42° to 53° is not extracted, and the effect of improving the light extraction efficiency by forming the low refractive index layer 78 is large.

(發光裝置:第八實施形態) (Light-emitting device: eighth embodiment)

圖8係表示第八實施形態之發光裝置之概略剖面圖。 Fig. 8 is a schematic cross-sectional view showing a light-emitting device of an eighth embodiment.

發光裝置80具有透光性或非透光性基板81、第一電極(下部電極)82、透明之第二電極(上部電極)83、及有機發光層84。第一電極(下部電極)82、及透明之第二電極(上部電極)83依序積層於該基板81之一面81a上。有機發光層84形成於第一電極82及第二電極83之間。又,於基板81之一面81a上形成有將第一電極82及有機發光層84劃分成複數個特定區域的光反射性障壁(絕緣層)85。 The light-emitting device 80 has a light-transmitting or non-transmissive substrate 81, a first electrode (lower electrode) 82, a transparent second electrode (upper electrode) 83, and an organic light-emitting layer 84. The first electrode (lower electrode) 82 and the transparent second electrode (upper electrode) 83 are sequentially laminated on one surface 81a of the substrate 81. The organic light emitting layer 84 is formed between the first electrode 82 and the second electrode 83. Further, a light reflective barrier (insulating layer) 85 that divides the first electrode 82 and the organic light-emitting layer 84 into a plurality of specific regions is formed on one surface 81a of the substrate 81.

本實施形態之發光裝置80於具有接合層86、對向基板87、及低折射率層88之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 80 of the present embodiment is different from the first embodiment in that it has the bonding layer 86, the counter substrate 87, and the low refractive index layer 88. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)83上並經由接合層86而形成對向基板(密封基板)87。又,於接合層86與第二電極(上部電極)83之間形成有低折射率層88。低折射率層88例如係由折射率低於對向基板(密封基板)87之折射率的材料所形成。 The counter substrate (sealing substrate) 87 is formed by being superposed on the second electrode (upper electrode) 83 and via the bonding layer 86. Further, a low refractive index layer 88 is formed between the bonding layer 86 and the second electrode (upper electrode) 83. The low refractive index layer 88 is formed, for example, of a material having a refractive index lower than that of the opposite substrate (sealing substrate) 87.

於該實施形態中,低折射率層88例如被劃分成各像素。即,於第七實施形態中,低折射率層78覆蓋第二電極(上部電極)73整體而形成為連續層(參照圖7),於第八實施形態中,低折射率層88被劃分成複數個。藉此,可將自低折射率層88沿面擴展方向傳播之光遮斷,進一步提高光提取效率。 In this embodiment, the low refractive index layer 88 is divided into, for example, individual pixels. That is, in the seventh embodiment, the low refractive index layer 78 covers the entire second electrode (upper electrode) 73 and is formed as a continuous layer (see Fig. 7). In the eighth embodiment, the low refractive index layer 88 is divided into Multiple. Thereby, light propagating from the low refractive index layer 88 in the surface expansion direction can be blocked, and the light extraction efficiency can be further improved.

(發光裝置:第九實施形態) (Light-emitting device: ninth embodiment)

圖9係表示第九實施形態之發光裝置之概略剖面圖。 Fig. 9 is a schematic cross-sectional view showing a light-emitting device of a ninth embodiment.

發光裝置90具有透光性或非透光性基板91、第一電極(下部電極)92、透明之第二電極(上部電極)93、及有機發光層94。第一電極(下部電極)92、及透明之第二電極(上部電極)93依序積層於基板91之一面91a上。有機發光層94形成於第一電極92及第二電極93之間。又,於基板91之一面91a上形成有將第一電極92及有機發光層94劃分成複數個特定區域的光反射性障壁(絕緣層)95。 The light-emitting device 90 has a light-transmitting or non-transmissive substrate 91, a first electrode (lower electrode) 92, a transparent second electrode (upper electrode) 93, and an organic light-emitting layer 94. The first electrode (lower electrode) 92 and the transparent second electrode (upper electrode) 93 are sequentially laminated on one surface 91a of the substrate 91. The organic light emitting layer 94 is formed between the first electrode 92 and the second electrode 93. Further, a light-reflective barrier (insulating layer) 95 that divides the first electrode 92 and the organic light-emitting layer 94 into a plurality of specific regions is formed on one surface 91a of the substrate 91.

本實施形態之發光裝置90於具有接合層96、對向基板97、及低折射率層98之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 90 of the present embodiment is different from the first embodiment in that it has the bonding layer 96, the counter substrate 97, and the low refractive index layer 98. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)93上並經由接合層96而形成對向基板(密封基板)97。又,於接合層96與第二電極(上部電極)97之間形成有低折射率層98。低折射率層98例如係由折射率低於對向基板(密封基板)97之折射率的材料所形成。藉此,藉由低折射率層98緩和接合層96與對向基板(密封基板)97之間的折射率差,可進一步提高光提取效 率。 The counter substrate (sealing substrate) 97 is formed to overlap the second electrode (upper electrode) 93 and via the bonding layer 96. Further, a low refractive index layer 98 is formed between the bonding layer 96 and the second electrode (upper electrode) 97. The low refractive index layer 98 is formed, for example, of a material having a refractive index lower than that of the opposite substrate (sealing substrate) 97. Thereby, the refractive index difference between the bonding layer 96 and the counter substrate (sealing substrate) 97 is alleviated by the low refractive index layer 98, thereby further improving the light extraction efficiency. rate.

(發光裝置:第十實施形態) (Light-emitting device: tenth embodiment)

圖10係表示第十實施形態之發光裝置之概略剖面圖。 Fig. 10 is a schematic cross-sectional view showing a light-emitting device of a tenth embodiment.

發光裝置100具有透光性或非透光性基板101、第一電極(下部電極)102、透明之第二電極(上部電極)103、及有機發光層104。第一電極(下部電極)102、及透明之第二電極(上部電極)103依序積層於該基板101之一面101a上。有機發光層104形成於第一電極102及第二電極103之間。又,於基板101之一面101a上形成有將第一電極102及有機發光層104劃分成複數個特定區域的光反射性障壁(絕緣層)105。 The light-emitting device 100 has a light-transmitting or non-transmissive substrate 101, a first electrode (lower electrode) 102, a transparent second electrode (upper electrode) 103, and an organic light-emitting layer 104. The first electrode (lower electrode) 102 and the transparent second electrode (upper electrode) 103 are sequentially laminated on one surface 101a of the substrate 101. The organic light emitting layer 104 is formed between the first electrode 102 and the second electrode 103. Further, a light reflective barrier (insulating layer) 105 that divides the first electrode 102 and the organic light-emitting layer 104 into a plurality of specific regions is formed on one surface 101a of the substrate 101.

本實施形態之發光裝置100於具有接合層106、對向基板107、及低折射率層108之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 100 of the present embodiment is different from the first embodiment in that it has the bonding layer 106, the counter substrate 107, and the low refractive index layer 108. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)103上並經由接合層106而形成對向基板(密封基板)107。又,於接合層106與對向基板(密封基板)107之間形成有低折射率層108。低折射率層108例如係由折射率低於對向基板(密封基板)107之折射率的材料所形成。 The counter substrate (sealing substrate) 107 is formed by being superposed on the second electrode (upper electrode) 103 and via the bonding layer 106. Further, a low refractive index layer 108 is formed between the bonding layer 106 and the counter substrate (sealing substrate) 107. The low refractive index layer 108 is formed, for example, of a material having a refractive index lower than that of the counter substrate (sealing substrate) 107.

又,於該實施形態中,低折射率層108例如被劃分成各像素。即,於第九實施形態中,低折射率層98覆蓋第二電極(上部電極)93整體而形成為連續層(參照圖9),於第十實施形態中,低折射率層108被劃分成複數個。藉此,可將自低折射率層108沿面擴展方向傳播之光遮斷,進一步提 高光提取效率。 Further, in this embodiment, the low refractive index layer 108 is divided into, for example, individual pixels. That is, in the ninth embodiment, the low refractive index layer 98 covers the entire second electrode (upper electrode) 93 and is formed as a continuous layer (see Fig. 9). In the tenth embodiment, the low refractive index layer 108 is divided into Multiple. Thereby, light propagating from the low refractive index layer 108 in the direction of surface expansion can be interrupted, further High light extraction efficiency.

(發光裝置:第十一實施形態) (Light-emitting device: eleventh embodiment)

圖11係表示第十一實施形態之發光裝置之概略剖面圖。 Fig. 11 is a schematic cross-sectional view showing a light-emitting device of an eleventh embodiment.

發光裝置110具有透光性或非透光性基板111、第一電極(下部電極)112、透明之第二電極(上部電極)113、及有機發光層114。第一電極(下部電極)112、及透明之第二電極(上部電極)113依序積層於基板111之一面111a上。有機發光層114形成於第一電極112及第二電極113之間。又,於基板111之一面111a上形成有將第一電極112及有機發光層114劃分成複數個特定區域之光反射性之第一障壁(障壁)115a。 The light-emitting device 110 has a light-transmitting or non-transmissive substrate 111, a first electrode (lower electrode) 112, a transparent second electrode (upper electrode) 113, and an organic light-emitting layer 114. The first electrode (lower electrode) 112 and the transparent second electrode (upper electrode) 113 are sequentially laminated on one surface 111a of the substrate 111. The organic light emitting layer 114 is formed between the first electrode 112 and the second electrode 113. Further, a first barrier (barrier) 115a for dividing the first electrode 112 and the organic light-emitting layer 114 into a plurality of specific regions is formed on one surface 111a of the substrate 111.

本實施形態之發光裝置110於具有第二障壁115b、接合層116、對向基板117、及低折射率層118之方面、以及有機發光層114之構成與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 110 of the present embodiment differs from the first embodiment in that the second barrier rib 115b, the bonding layer 116, the counter substrate 117, and the low refractive index layer 118, and the organic light-emitting layer 114 are configured. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

重疊於第二電極(上部電極)113上並經由接合層116而形成對向基板(密封基板)117。又,於接合層116與對向基板(密封基板)117之間形成有光反射性之第二障壁(對向障壁)115b及低折射率層118。第一障壁(障壁)115a及第二障壁(對向障壁)115b係形成於經由第二電極(上部電極)113而相互對向之位置上。又,低折射率層118係於第二障壁(對向障壁)115b彼此之間形成為例如各像素。第一障壁115a之寬度可大於第二障壁115b之寬度。藉此,可減少自有機發光層114射出之光之損失。 The counter substrate (sealing substrate) 117 is formed to overlap the second electrode (upper electrode) 113 and via the bonding layer 116. Further, a second barrier (opposing barrier) 115b and a low refractive index layer 118 having light reflectivity are formed between the bonding layer 116 and the counter substrate (sealing substrate) 117. The first barrier (barrier) 115a and the second barrier (opposing barrier) 115b are formed at positions facing each other via the second electrode (upper electrode) 113. Further, the low refractive index layer 118 is formed as, for example, each pixel between the second barrier (opposing barrier) 115b. The width of the first barrier rib 115a may be greater than the width of the second barrier rib 115b. Thereby, the loss of light emitted from the organic light-emitting layer 114 can be reduced.

於上述第十一實施形態中,藉由於相互對向之位置上形成光反射性之第一障壁(障壁)115a及第二障壁(對向障壁)115b,可防止光於有機發光層114中沿面擴展方向傳播,並且藉由第二障壁115b,亦可防止光於接合層116及對向基板(密封基板)117附近沿面擴展方向傳播,可進一步提高光提取效率。 In the eleventh embodiment, the light-reflecting first barrier (barrier) 115a and the second barrier (opposing barrier) 115b are formed at positions opposite to each other, thereby preventing light from passing along the organic light-emitting layer 114. The propagation in the extended direction and the second barrier rib 115b prevent light from propagating in the direction of surface expansion in the vicinity of the bonding layer 116 and the opposite substrate (sealing substrate) 117, and the light extraction efficiency can be further improved.

(發光裝置:第十二實施形態) (Light-emitting device: twelfth embodiment)

圖12係表示第十二實施形態之發光裝置之概略剖面圖。 Fig. 12 is a schematic cross-sectional view showing a light-emitting device of a twelfth embodiment.

發光裝置120具有透光性或非透光性基板121、第一電極(下部電極)122、透明之第二電極(上部電極)123、及有機發光層124。第一電極(下部電極)122、及透明之第二電極(上部電極)123依序積層於該基板121之一面121a上。有機發光層124形成於第一電極122及第二電極123之間。又,於基板121之一面121a上形成有將第一電極122及有機發光層124劃分成複數個特定區域的光反射性障壁(絕緣層)125。 The light-emitting device 120 has a light-transmitting or non-transmissive substrate 121, a first electrode (lower electrode) 122, a transparent second electrode (upper electrode) 123, and an organic light-emitting layer 124. The first electrode (lower electrode) 122 and the transparent second electrode (upper electrode) 123 are sequentially laminated on one surface 121a of the substrate 121. The organic light emitting layer 124 is formed between the first electrode 122 and the second electrode 123. Further, a light reflective barrier (insulating layer) 125 that divides the first electrode 122 and the organic light-emitting layer 124 into a plurality of specific regions is formed on one surface 121a of the substrate 121.

本實施形態之發光裝置110於具有黑矩陣層129指方面、及有機發光層124之構成與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 110 of the present embodiment differs from the first embodiment in that it has a black matrix layer 129 finger and the organic light-emitting layer 124. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於障壁(絕緣層)125與基板121之一面121a之間、即障壁(絕緣層)125之內部形成有黑矩陣層129。該黑矩陣層129可防止外光之反射,例如即便於明亮之室外等環境下,亦可提高發光裝置120之對比度、進一步提高視認性。 A black matrix layer 129 is formed between the barrier (insulating layer) 125 and one surface 121a of the substrate 121, that is, inside the barrier (insulating layer) 125. The black matrix layer 129 can prevent reflection of external light, and can improve the contrast of the light-emitting device 120 and further improve visibility even in an environment such as a bright outdoor.

(發光裝置:第十三實施形態) (Light-emitting device: thirteenth embodiment)

圖13A~圖13D係表示第一實施形態之發光裝置之概略剖面圖。 13A to 13D are schematic cross-sectional views showing a light-emitting device of the first embodiment.

發光裝置210具有第一基板211、第一電極(下部電極)212、透光性第二電極(上部電極)213、有機發光層214、及透明之絕緣層216。第一電極(下部電極)212、及透光性第二電極(上部電極)213依序積層於該基板211之一面211a上。有機發光層214形成於第一電極212及第二電極213之間。絕緣膜216覆蓋第二電極(上部電極)213。 The light-emitting device 210 has a first substrate 211, a first electrode (lower electrode) 212, a translucent second electrode (upper electrode) 213, an organic light-emitting layer 214, and a transparent insulating layer 216. The first electrode (lower electrode) 212 and the light transmissive second electrode (upper electrode) 213 are sequentially laminated on one surface 211a of the substrate 211. The organic light emitting layer 214 is formed between the first electrode 212 and the second electrode 213. The insulating film 216 covers the second electrode (upper electrode) 213.

本實施形態之發光裝置210於具有絕緣膜216之方面與第一實施形態不同。於其他構成要素與第一實施形態所記載之構成要素相同之情形時省略其說明。 The light-emitting device 210 of the present embodiment is different from the first embodiment in that it has the insulating film 216. The other components are the same as those described in the first embodiment, and the description thereof will be omitted.

又,於基板211之一面211a上形成有將第一電極212劃分成複數個特定區域之障壁(絕緣體)215。 Further, a barrier (insulator) 215 that divides the first electrode 212 into a plurality of specific regions is formed on one surface 211a of the substrate 211.

第一電極可如圖13A及圖13B所示般,於由障壁215所分隔出之各區域上形成圖案。第一電極亦可如圖13C及圖13D般,於圖案寬於由障壁215所分隔出之區域之第一電極212上形成障壁215。其中,於照明用途等只要使整個面發光即可之情形時,於圖13A及圖13B之情況下,某部分亦可形成為鄰接之第一電極彼此導通之圖案。 The first electrode may be patterned on each of the regions partitioned by the barrier 215 as shown in FIGS. 13A and 13B. The first electrode may also form a barrier 215 on the first electrode 212 having a wider pattern than the region partitioned by the barrier 215, as shown in FIGS. 13C and 13D. In the case where the entire surface is to be illuminated for illumination purposes or the like, in the case of FIGS. 13A and 13B, a certain portion may be formed as a pattern in which the adjacent first electrodes are electrically connected to each other.

作為發光裝置210之製造製程,例如可使用如下製程等:於第一基板211上形成第一電極(下部電極)212,其後形成障壁215,進而形成有機發光層214、第二電極(上部電極)213、及絕緣層。 As a manufacturing process of the light-emitting device 210, for example, a process of forming a first electrode (lower electrode) 212 on the first substrate 211, and then forming a barrier 215, thereby forming an organic light-emitting layer 214 and a second electrode (upper electrode) may be used. ) 213, and insulation layer.

由於有機EL所使用之材料對於水分、氧等之耐性極弱, 故而較佳為於形成有機發光層214之前、即形成第一電極(下部電極)212及障壁215後,進行充分之脫水步驟(烘烤步驟、真空乾燥步驟等)。 Since the materials used in organic EL are extremely resistant to moisture, oxygen, etc., Therefore, it is preferable to perform a sufficient dehydration step (baking step, vacuum drying step, etc.) before forming the first electrode (lower electrode) 212 and the barrier 215 before forming the organic light-emitting layer 214.

第一電極(下部電極)212具有光反射性。例如使用Ag、Al等。第一電極212通常為陽極,亦可設為陰極。於將第一電極212設為陽極之情形時,就工作函數等方面而言,較佳之材料為Ag或Ag合金等。另一方面,於將第一電極212設為陰極之情形時,可使用Ag、Ag合金、Al、Al合金等。 The first electrode (lower electrode) 212 has light reflectivity. For example, Ag, Al, or the like is used. The first electrode 212 is typically an anode or a cathode. In the case where the first electrode 212 is an anode, a preferable material is Ag or an Ag alloy or the like in terms of a work function and the like. On the other hand, in the case where the first electrode 212 is a cathode, Ag, an Ag alloy, Al, an Al alloy or the like can be used.

又,為了降低配線電阻等,亦可並設輔助配線。輔助配線例如可由Al、Ag、Ta、Ti、Ni等金屬材料所形成。 Further, in order to reduce wiring resistance and the like, auxiliary wiring may be provided in combination. The auxiliary wiring may be formed of a metal material such as Al, Ag, Ta, Ti, or Ni.

第二電極(上部電極)213與第一實施形態所記載之第二電極(上部電極)13相同。為了降低配線電阻等,亦可於第二電極(上部電極)213上並設輔助配線。輔助配線例如可由Al、Ag、Ta、Ti、Ni等金屬材料所形成。 The second electrode (upper electrode) 213 is the same as the second electrode (upper electrode) 13 described in the first embodiment. In order to reduce wiring resistance and the like, an auxiliary wiring may be provided on the second electrode (upper electrode) 213. The auxiliary wiring may be formed of a metal material such as Al, Ag, Ta, Ti, or Ni.

有機發光層、電洞傳輸層、電子傳輸層、電洞注入層及電子注入層等有機發光層214可形成於由障壁215所分隔出之區域內,亦可覆蓋障壁215而形成於較寬之範圍內。 The organic light-emitting layer 214 such as the organic light-emitting layer, the hole transport layer, the electron transport layer, the hole injection layer, and the electron injection layer may be formed in a region partitioned by the barrier 215 or may be formed in the wider barrier 215. Within the scope.

於有機發光層214覆蓋障壁215而形成於較寬之範圍內之情形時,有機發光層214存在如圖13A及圖13C如所示般成為連續膜之情況、與如圖13B及圖13D所示般以於障壁部分產生段割之狀態形成之情況。本實施形態可使用該等任一者。關於有機發光層214成為連續膜或段割之狀態之問題,係取決於障壁之性質(尤其是錐狀或親撥液性等)、有 機膜之形成方法、有機膜材料之性質(尤其是於塗佈形成之情形時,黏度或表面張力較重要)等。 When the organic light-emitting layer 214 covers the barrier 215 and is formed over a wide range, the organic light-emitting layer 214 has a continuous film as shown in FIGS. 13A and 13C, and is as shown in FIGS. 13B and 13D. Generally, the state in which the barrier portion is formed in a state in which the segment is cut is formed. Any of these may be used in the embodiment. The problem that the organic light-emitting layer 214 is in a state of continuous film or segment cutting depends on the properties of the barrier (especially cone or liquid, etc.) The method of forming the film, the nature of the organic film material (especially when the coating is formed, the viscosity or surface tension is important).

另一方面,於形成於由障壁所分隔出之區域上之情形時,例如成為於圖13B及圖13D中無障壁上之有機發光層214的狀態。作為將有機發光層214之形成區域限定於特定範圍內而形成之方法,例如只要適當採用使用藉由遮罩蒸鍍法、噴墨法、印刷等之濕式法的分塗,LITI(Laser Induced Thermal Imaging,雷射誘導熱成像)、LIPS(laser Induced Pattern wise Sublimation,雷射誘導圖案昇華)等使用雷射之方法,光漂白法等方法即可。 On the other hand, when it is formed in the region partitioned by the barrier ribs, for example, it is in the state of the organic light-emitting layer 214 on the barrier-free wall in FIGS. 13B and 13D. As a method of forming the formation region of the organic light-emitting layer 214 to a specific range, for example, a split coating using a wet method such as a mask vapor deposition method, an inkjet method, or the like is employed, and LITI (Laser Induced) Thermal Imaging, Laser Induced Thermal Imaging, LIPS (Laser Induced Pattern wise Sublimation), etc., using laser methods such as photobleaching.

對如上所述之構成之發光裝置之作用進行說明。 The action of the light-emitting device having the above configuration will be described.

如圖13A~圖13D所示,若於發光裝置210之第一電極(下部電極)212與第二電極(上部電極)213之間施加特定電壓值之電壓,則藉由利用注入至有機發光層214中之電子與電洞之再結合所產生之激子(exciton)而使有機發光層14發光。 As shown in FIG. 13A to FIG. 13D, if a voltage of a specific voltage value is applied between the first electrode (lower electrode) 212 of the light-emitting device 210 and the second electrode (upper electrode) 213, injection into the organic light-emitting layer is utilized. The excitons generated by the recombination of electrons and holes in 214 cause the organic light-emitting layer 14 to emit light.

有機發光層214所發出之光(激發光)之中,沿朝向絕緣膜216之方向射出之光之中,相對於基板法線之角度較小之光透過第二電極213、透明之絕緣層216而射出至外部。然而,相對於基板法線之角度較大之光由於構成發光裝置210之膜與空氣之折射率差,故而無法提取。關於多少度以下之光會被提取之問題,主要取決於構成發光裝置210之膜之折射率,適合於斯奈爾定律。 Among the light (excitation light) emitted from the organic light-emitting layer 214, among the light emitted in the direction toward the insulating film 216, light having a smaller angle with respect to the normal to the substrate passes through the second electrode 213 and the transparent insulating layer 216. And shot out to the outside. However, the light having a large angle with respect to the normal line of the substrate cannot be extracted because the refractive index of the film constituting the light-emitting device 210 is different from that of the air. The problem of how much light is extracted or not depends mainly on the refractive index of the film constituting the light-emitting device 210, and is suitable for Snell's law.

又,有機發光層214中發出之光(激發光)之中,沿朝向 非透光性第一電極(下部電極)212之方向射出之光經第一電極213之表面反射,再次透過有機發光層214,射出至透明之絕緣層216。該經反射之光之中,相對於基板法線之角度較小之光透過第二電極213、絕緣層216而射出至外部。然而,相對於基板法線之角度較大之光由於構成發光裝置210之膜與空氣之折射率差,故而無法提取。多少度以下之光會被提取主要取決於構成發光裝置210之膜之折射率,適合於斯奈爾定律。 Further, among the light (excitation light) emitted from the organic light-emitting layer 214, the orientation is along The light emitted in the direction of the non-transmissive first electrode (lower electrode) 212 is reflected by the surface of the first electrode 213, passes through the organic light-emitting layer 214 again, and is emitted to the transparent insulating layer 216. Among the reflected lights, light having a small angle with respect to the normal line of the substrate passes through the second electrode 213 and the insulating layer 216 and is emitted to the outside. However, the light having a large angle with respect to the normal line of the substrate cannot be extracted because the refractive index of the film constituting the light-emitting device 210 is different from that of the air. How many degrees of light are extracted depends mainly on the refractive index of the film constituting the light-emitting device 210, and is suitable for Snell's law.

另一方面,有機發光層214所發出之光(激發光)之中,沿面擴展方向(與積層方向垂直之方向)射出之光射入障壁215。射入障壁215之光由於障壁215包含具有光反射性之材料,故而使所射入之光反射、且較佳為使其擴散。並且,經障壁215反射之光亦於發光裝置210內反覆進行反射、散射等後,射出至絕緣層216。該光之中,相對於基板法線之角度較小之光透過第二電極213、絕緣層216而射出至外部。然而,相對於基板法線之角度較大之光由於構成發光裝置210之膜與空氣之折射率差,故而無法提取。關於多少度以下之光會被提取之問題,主要取決於構成發光裝置210之膜之折射率,適合於斯奈爾定律。 On the other hand, among the light (excitation light) emitted from the organic light-emitting layer 214, light emitted in the plane spreading direction (direction perpendicular to the stacking direction) enters the barrier 215. Since the light entering the barrier 215 includes a material having light reflectivity, the light that is incident on the barrier 215 reflects the light incident thereon and preferably diffuses it. Then, the light reflected by the barrier 215 is reflected, scattered, and the like in the light-emitting device 210, and then emitted to the insulating layer 216. Among the lights, light having a small angle with respect to the normal line of the substrate passes through the second electrode 213 and the insulating layer 216 and is emitted to the outside. However, the light having a large angle with respect to the normal line of the substrate cannot be extracted because the refractive index of the film constituting the light-emitting device 210 is different from that of the air. The problem of how much light is extracted or not depends mainly on the refractive index of the film constituting the light-emitting device 210, and is suitable for Snell's law.

認為未自發光裝置210中提取出之光再次進入發光裝置210之內部,但若於其過程中遇到障壁215,則因此改變行進方向,再次獲得射出至絕緣層216之機會。並且,若當時相對於基板法線之角度較小,則被提取至外部,若相對於基板法線之角度較大,則再次於發光裝置210內反覆進 行反射、散射,只要光之出口僅為經由絕緣層216而被提取至外部之位置,則除於發光裝置210之內部衰減、消失之光以外,其餘之光於原理上被提取至外部。 It is considered that the light that is not extracted from the light-emitting device 210 enters the inside of the light-emitting device 210 again, but if the barrier 215 is encountered in the process, the traveling direction is changed, and the chance of being emitted to the insulating layer 216 is again obtained. Moreover, if the angle with respect to the normal to the substrate is small at the time, it is extracted to the outside, and if the angle with respect to the normal to the substrate is large, it is again reversed in the light-emitting device 210. The light is reflected and scattered, and as long as the light exit is extracted to the outside through the insulating layer 216, the light is extracted to the outside except for the light that is internally attenuated or disappeared by the light-emitting device 210.

如此,藉由本實施形態之發光裝置210,由於障壁215具有光反射性,故而射出至障壁215之光不會被障壁215吸收、或於障壁215內導波而損失。並且,射出至障壁215之光經障壁215反射而經由第二電極213射出至外部,藉此可大幅度提高光提取效率。 As described above, in the light-emitting device 210 of the present embodiment, since the barrier 215 has light reflectivity, light emitted to the barrier 215 is not absorbed by the barrier 215 or guided by the barrier 215 and is lost. Further, the light emitted to the barrier 215 is reflected by the barrier 215 and is emitted to the outside via the second electrode 213, whereby the light extraction efficiency can be greatly improved.

即,相對於先前之發光裝置藉由有機發光層之折射率或散射性、或形狀之控制而提高光提取效率的想法,於本實施形態中,將有機發光層214所發出之光封閉於由障壁215所圍成之區域內而使光不沿著障壁215之方向傳播。藉由上述構成,可將光之射出僅限定於欲提取光之方向,而於光無損失之情況下高效地提取。藉此,與先前所知之發光裝置相比,可大幅度提高光提取效率。 That is, in view of the idea that the light-emitting efficiency is improved by the control of the refractive index or the scattering property or the shape of the organic light-emitting layer in the conventional light-emitting device, in the present embodiment, the light emitted from the organic light-emitting layer 214 is enclosed by The area enclosed by the barrier 215 causes light to not propagate in the direction of the barrier 215. According to the above configuration, the light emission can be limited only to the direction in which the light is to be extracted, and can be efficiently extracted without loss of light. Thereby, the light extraction efficiency can be greatly improved as compared with the previously known light-emitting device.

再者,障壁215更佳為包含必需具有光反射性、除此以外進而具有非單向反射之漫反射性、散射性的材料。與單向反射相比,漫反射、散射者使射入障壁215之光於無規之方向反射,因此進一步提高光之提取效率。 Further, the barrier 215 is preferably a material containing diffuse reflectance and scattering which are required to have light reflectivity and which have non-unidirectional reflection. Compared with the unidirectional reflection, the diffuse reflection and the scatterer reflect the light incident on the barrier 215 in a random direction, thereby further improving the light extraction efficiency.

又,配置障壁215之位置理想而言較佳為圖案化成特定之形狀之第一電極(下部電極)212之周邊全部經障壁215覆蓋。然而,即便障壁215僅覆蓋其一部分,亦獲得光提取效率之提高效果。 Further, it is preferable that the position of the barrier rib 215 is preferably such that the periphery of the first electrode (lower electrode) 212 patterned into a specific shape is covered by the barrier 215. However, even if the barrier 215 covers only a part thereof, an effect of improving the light extraction efficiency is obtained.

(發光裝置:第十四實施形態) (Light-emitting device: fourteenth embodiment)

圖14係表示第十四實施形態之發光裝置之概略剖面圖。 Fig. 14 is a schematic cross-sectional view showing a light-emitting device of a fourteenth embodiment.

發光裝置220具有透光性或非透光性之第一基板221、光反射性之第一電極(下部電極)222、透明之第二電極(上部電極)223、及有機發光層224。光反射性之第一電極(下部電極)222、及透明之第二電極(上部電極)223依序積層於第一基板221之一面221a上。有機發光層224形成於第一電極222及第二電極223之間。有機發光層224具有第一電荷傳輸層224a、有機發光層224b、及第二電荷傳輸層224c。又,於基板21之一面221a上形成有將第一電極222劃分成複數個特定區域的光反射性障壁(絕緣體)225。 The light-emitting device 220 has a light-transmitting or non-transmissive first substrate 221, a light-reflective first electrode (lower electrode) 222, a transparent second electrode (upper electrode) 223, and an organic light-emitting layer 224. The light-reflective first electrode (lower electrode) 222 and the transparent second electrode (upper electrode) 223 are sequentially laminated on one surface 221a of the first substrate 221. The organic light emitting layer 224 is formed between the first electrode 222 and the second electrode 223. The organic light emitting layer 224 has a first charge transport layer 224a, an organic light emitting layer 224b, and a second charge transport layer 224c. Further, a light reflective barrier (insulator) 225 that divides the first electrode 222 into a plurality of specific regions is formed on one surface 221a of the substrate 21.

本實施形態之發光裝置220之有機發光層224之構成與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The configuration of the organic light-emitting layer 224 of the light-emitting device 220 of the present embodiment is different from that of the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

該實施形態之發光裝置220係以自有機發光層224之發光區域之中心位置、即有機發光層224b之厚度方向之中心直至第一電極222之上表面為止的距離成為200 nm以上之方式形成。 In the light-emitting device 220 of the embodiment, the distance from the center of the light-emitting region of the organic light-emitting layer 224, that is, the center of the thickness direction of the organic light-emitting layer 224b to the upper surface of the first electrode 222 is 200 nm or more.

作為降低光提取效率之要因之一,存在基於與金屬電極之共振之表面離體子現象。由於若金屬電極與發光位置之間的距離成為200 nm左右則該表面離體子現象變小,故而藉由將有機發光層224之發光區域之中心位置與第一電極222的距離設定為200 nm以上,可實現較高之光提取效率。 As one of the factors for lowering the light extraction efficiency, there is a phenomenon of surface separation from the surface based on resonance with a metal electrode. If the distance between the metal electrode and the light-emitting position becomes about 200 nm, the surface is reduced from the body phenomenon, so that the distance between the center position of the light-emitting region of the organic light-emitting layer 224 and the first electrode 222 is set to 200 nm. In the above, a higher light extraction efficiency can be achieved.

使有機發光層224之發光區域之中心位置與第一電極222 的距離成為200 nm以上之方法存在若干個,例如存在如下方法等:如圖14所示,以第一電荷傳輸層224a、有機發光層224b、第二電荷傳輸層224c之形態形成有機發光層224,將第一電荷傳輸層224a之膜厚形成為200 nm以上。 The center position of the light emitting region of the organic light emitting layer 224 and the first electrode 222 There are a plurality of methods in which the distance is 200 nm or more. For example, there is a method in which the organic light-emitting layer 224 is formed in the form of the first charge transport layer 224a, the organic light-emitting layer 224b, and the second charge transport layer 224c as shown in FIG. The film thickness of the first charge transport layer 224a is formed to be 200 nm or more.

再者,於圖14中,關於用以保護有機EL元件免受水分或氧之侵害之密封未圖示。然而,可使用與圖13同樣地利用透明之絕緣層覆蓋第二電極223之上表面的方法、或如下述第十五實施形態般使用第二基板進行密封之方法等。 In addition, in FIG. 14, the seal for protecting the organic EL element from moisture or oxygen is not shown. However, a method of covering the upper surface of the second electrode 223 with a transparent insulating layer as in FIG. 13 or a method of sealing using a second substrate as in the fifteenth embodiment will be used.

又,於圖14中,所描繪的是有機發光層224覆蓋於障壁225上而成為連續膜。然而,亦可如第一實施形態中所說明般,有機發光層224於障壁225之形成部分產生段割。有機發光層224亦可為僅形成於經障壁225所分隔出之區域中之形態。 Further, in FIG. 14, it is depicted that the organic light-emitting layer 224 is covered on the barrier 225 to form a continuous film. However, as described in the first embodiment, the organic light-emitting layer 224 may be cut at the portion where the barrier 225 is formed. The organic light-emitting layer 224 may also be formed only in a region partitioned by the barrier 225.

(發光裝置:第十五實施形態) (Light-emitting device: fifteenth embodiment)

圖15係表示第十五實施形態之發光裝置之概略剖面圖。 Fig. 15 is a schematic cross-sectional view showing a light-emitting device of a fifteenth embodiment.

發光裝置230具有透光性或非透光性之第一基板231、光反射性之第一電極(下部電極)232、透明之第二電極(上部電極)233、及有機發光層234。光反射性之第一電極(下部電極)232、及透明之第二電極(上部電極)233依序積層於第一基板231之一面231a上。有機發光層234形成於第一電極232及第二電極233之間。又,於基板231之一面231a上形成有將第一電極232、及有機發光層234劃分成複數個特定區域的光反射性障壁(絕緣體)235。 The light-emitting device 230 has a light-transmissive or non-transmissive first substrate 231, a light-reflective first electrode (lower electrode) 232, a transparent second electrode (upper electrode) 233, and an organic light-emitting layer 234. The light-reflective first electrode (lower electrode) 232 and the transparent second electrode (upper electrode) 233 are sequentially laminated on one surface 231a of the first substrate 231. The organic light emitting layer 234 is formed between the first electrode 232 and the second electrode 233. Further, a light-reflective barrier (insulator) 235 that divides the first electrode 232 and the organic light-emitting layer 234 into a plurality of specific regions is formed on one surface 231a of the substrate 231.

本實施形態之發光裝置230於具有第二基板236、低折射 率層237、水分吸收構件(水分吸收層)238、及密封層239之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 230 of the embodiment has the second substrate 236 and low refraction. The rate layer 237, the moisture absorbing member (water absorbing layer) 238, and the sealing layer 239 are different from those of the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

以與第一基板231對向之方式配置透光性第二基板236。於該第二基板236與第二電極233之間配置低折射率層237、及水分吸收構件(水分吸收層)238。又,於第一基板231與第二基板236之間的各層之周面上形成有防止水分或氧自外部浸入發光裝置230之內部之密封層239。 The translucent second substrate 236 is disposed to face the first substrate 231. A low refractive index layer 237 and a moisture absorbing member (moisture absorbing layer) 238 are disposed between the second substrate 236 and the second electrode 233. Further, a sealing layer 239 for preventing moisture or oxygen from entering the inside of the light-emitting device 230 from the outside is formed on the peripheral surface of each layer between the first substrate 231 and the second substrate 236.

第二基板(密封基板)236需為透光性,例如可應用玻璃、膜等硬質之透明基板。 The second substrate (sealing substrate) 236 needs to be translucent, and for example, a hard transparent substrate such as glass or film can be applied.

水分吸收構件238保護發光裝置230免受水分或氧之侵害。如圖15所示,於在成為光射出之路徑之部分配置水分吸收構件238之情形時,水分吸收構件238要求為透光性。於圖15中,顯示於光射出之路徑中配置水分吸收構件238之情形。然而,亦可為於自光射出之路徑偏離之周邊部分配置水分吸收構件283之構成。又,若密封層239具有充分之防止水分透過之能力,則亦可不形成水分吸收構件238。 The moisture absorbing member 238 protects the light emitting device 230 from moisture or oxygen. As shown in FIG. 15, when the moisture absorbing member 238 is disposed in a portion where the light is emitted, the moisture absorbing member 238 is required to be translucent. In Fig. 15, the case where the moisture absorbing member 238 is disposed in the path of light emission is shown. However, the configuration of the moisture absorbing member 283 may be disposed in a peripheral portion from which the path of the light emission is deviated. Further, if the sealing layer 239 has sufficient ability to prevent moisture from permeating, the moisture absorbing member 238 may not be formed.

低折射率層237只要為透光性之固體層、例如無機膜與樹脂膜之積層體即可。又,低折射率層237亦較佳為空氣層、乾燥氮氣層等氣體層、或減壓氣體層、真空層等。於將低折射率層237設為氣體層之情形時,只要於第二基板236與第二電極(上部電極)233之間夾入例如間隔件等以保持特定之間隔、並於邊緣部分進行密封即可。 The low refractive index layer 237 may be a transparent solid layer, for example, a laminate of an inorganic film and a resin film. Further, the low refractive index layer 237 is also preferably a gas layer such as an air layer or a dry nitrogen gas layer, a reduced pressure gas layer, a vacuum layer or the like. In the case where the low refractive index layer 237 is a gas layer, for example, a spacer or the like is interposed between the second substrate 236 and the second electrode (upper electrode) 233 to maintain a specific interval and seal at the edge portion. Just fine.

上述低折射率層237最佳為氣體層。氣體層例如可包含空氣、氮氣、氬氣等各種氣體,氣體之種類並無特別限定。其中,就抑制因與有機發光層234之反應所引起之特性劣化的觀點而言,較理想的是使用非活性氣體。 The low refractive index layer 237 is preferably a gas layer. The gas layer may contain various gases such as air, nitrogen, and argon, and the type of the gas is not particularly limited. Among them, from the viewpoint of suppressing deterioration of characteristics due to reaction with the organic light-emitting layer 234, it is preferred to use an inert gas.

就抑制因水分浸入有機發光層234中所引起之特性劣化之觀點而言,較理想的是使用乾燥空氣等濕度較低之氣體。於大氣壓下,空氣之折射率約為1.000293,氮氣之折射率約為1.000297,氬氣之折射率為1.000281。即便包含其他氣體,亦可將氣體之折射率視作約1.000。 From the viewpoint of suppressing deterioration of characteristics due to moisture intrusion into the organic light-emitting layer 234, it is preferred to use a gas having a low humidity such as dry air. At atmospheric pressure, the refractive index of air is about 1.000293, the refractive index of nitrogen is about 1.000297, and the refractive index of argon is 1.000281. Even if other gases are included, the refractive index of the gas can be regarded as about 1.000.

可認為即便壓力變化氣體之折射率亦幾乎未變化。因此,氣體層之壓力可為任意,可為大氣壓(1.01325×105 Pa),亦可相對於大氣壓而為減壓狀態,亦可為加壓狀態。於減壓狀態之情形時,儘管於現實中不存在絕對真空,但只要為維持氣體層6之形態之狀態,則亦可為例如高真空狀態(0.1 Pa~10-5 Pa)或超高真空狀態(10-5 Pa以下)。 It is considered that the refractive index of the gas even if it is changed is hardly changed. Therefore, the pressure of the gas layer may be any, and may be atmospheric pressure (1.01325 × 105 Pa), or may be a reduced pressure state with respect to atmospheric pressure, or may be a pressurized state. In the case of the decompressed state, although there is no absolute vacuum in reality, it may be, for example, a high vacuum state (0.1 Pa to 10 -5 Pa) or an ultra-high vacuum as long as the state of the gas layer 6 is maintained. Status (10 -5 Pa or less).

即,無論氣體之壓力如何,需於有機發光層234與第二基板236互不接觸之情況下設定特定之距離進行配置,於有機層234與第二基板236之間形成包含厚度大致固定之氣體層之低折射率層237。於以下之說明中,將包含氣體層之低折射率層237之折射率設為1.000。 That is, regardless of the pressure of the gas, a specific distance is set when the organic light-emitting layer 234 and the second substrate 236 are not in contact with each other, and a gas having a substantially constant thickness is formed between the organic layer 234 and the second substrate 236. A layer of low refractive index layer 237. In the following description, the refractive index of the low refractive index layer 237 including the gas layer is set to 1.000.

於該實施形態中,於低折射率層237為氣體層之情形時,利用與第十三實施形態中所說明者之同樣之機制,所發出之光被提取至包含氣體層之低折射率層237。由於氣 體層與外部之折射率差於實質上大致為0,故而自氣體層射出之光經由第二基板236被提取至外部。 In the embodiment, when the low refractive index layer 237 is a gas layer, the emitted light is extracted to the low refractive index layer including the gas layer by the same mechanism as that described in the thirteenth embodiment. 237. Due to gas The difference in refractive index between the bulk layer and the outside is substantially zero, so that light emitted from the gas layer is extracted to the outside via the second substrate 236.

於低折射率層237不為氣體之情形時,配置其折射率處於第二基板236之折射率值與1.0之間的低折射率層237。折射率之值越接近1.0,則光提取效率越高,於折射率之值與玻璃相同之情形時,大部分之光於該層或包含玻璃等之第二基板236中導波而擴散,效果消失。 When the low refractive index layer 237 is not a gas, the low refractive index layer 237 whose refractive index is between the refractive index value of the second substrate 236 and 1.0 is disposed. The closer the value of the refractive index is to 1.0, the higher the light extraction efficiency. When the value of the refractive index is the same as that of the glass, most of the light is guided by the layer or the second substrate 236 containing glass or the like, and the effect is diffused. disappear.

再者,於圖15中,所描繪的是有機發光層234覆蓋於障壁235上而成為連續膜。亦可如第十三實施形態中所說明般,有機發光層234於障壁235之形成部分產生段割。有機發光層234亦可為僅形成於經障壁35所分隔出之區域中之形態。 Further, in Fig. 15, it is depicted that the organic light-emitting layer 234 is overlaid on the barrier 235 to form a continuous film. Alternatively, as described in the thirteenth embodiment, the organic light-emitting layer 234 may be cut at a portion where the barrier 235 is formed. The organic light-emitting layer 234 may also be formed only in a region partitioned by the barrier ribs 35.

又,於未設置光反射性障壁235而僅形成低折射率層237之情形時,於第二電極233與低折射率層237之界面上跳回之光反覆進行單向反射而於面擴展方向上擴散,光提取效率並未那麼提高。因此,藉由組合使用光反射性障壁235與低折射率層237,可獲得光提取效率之大幅度之提高效果。 Further, when the light reflective barrier 235 is not provided and only the low refractive index layer 237 is formed, the light that jumps back at the interface between the second electrode 233 and the low refractive index layer 237 is unidirectionally reflected in the direction of surface expansion. On the diffusion, the light extraction efficiency is not so improved. Therefore, by using the light-reflective barrier 235 and the low-refractive-index layer 237 in combination, a large effect of improving the light extraction efficiency can be obtained.

(發光裝置:第十六實施形態) (Light-emitting device: Sixteenth embodiment)

圖16係表示第十六實施形態之發光裝置之概略剖面圖。 Fig. 16 is a schematic cross-sectional view showing a light-emitting device of a sixteenth embodiment.

發光裝置240具有透光性或非透光性之第一基板241、反射層246、透光性第一電極(下部電極)242、透明之第二電極(上部電極)243、有機發光層244、及光反射性障壁(絕緣體)245。反射層246、透光性第一電極(下部電極)242、及 透明之第二電極(上部電極)243依序積層於第一基板241之一面241a上。有機發光層244形成於第一電極242及第二電極243之間。於基板241之一面241a上形成有將第一電極242、有機層244劃分成複數個特定區域的光反射性障壁(絕緣體)245。 The light-emitting device 240 has a light-transmitting or non-transmissive first substrate 241, a reflective layer 246, a translucent first electrode (lower electrode) 242, a transparent second electrode (upper electrode) 243, an organic light-emitting layer 244, And a light reflective barrier (insulator) 245. a reflective layer 246, a translucent first electrode (lower electrode) 242, and The transparent second electrode (upper electrode) 243 is sequentially laminated on one surface 241a of the first substrate 241. The organic light emitting layer 244 is formed between the first electrode 242 and the second electrode 243. A light reflective barrier (insulator) 245 that divides the first electrode 242 and the organic layer 244 into a plurality of specific regions is formed on one surface 241a of the substrate 241.

反射層246例如包含金屬膜。例如可使用Ag、Al等。 The reflective layer 246 includes, for example, a metal film. For example, Ag, Al, or the like can be used.

本實施形態之發光裝置240於具有反射層246之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 240 of the present embodiment is different from the first embodiment in that it has the reflective layer 246. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於該實施形態中,有機發光層244之發光區域之中心位置與第一電極242之間的距離為200 nm以上。將有機發光層244之發光區域之中心位置與第一電極242之間的距離設為200 nm以上之原因如第二實施形態中所說明般,在於防止因基於與金屬之共振之表面離體子現象所引起之光提取損失。 In this embodiment, the distance between the center position of the light-emitting region of the organic light-emitting layer 244 and the first electrode 242 is 200 nm or more. The reason why the distance between the center position of the light-emitting region of the organic light-emitting layer 244 and the first electrode 242 is 200 nm or more is as described in the second embodiment, in that the surface is prevented from being separated from the surface by resonance with the metal. Light extraction loss caused by the phenomenon.

使有機發光層244之發光區域之中心位置與第一電極242的距離成為200 nm以上之方法可使用與第二實施形態中所說明之方法相同之方法,於本實施形態中,透光性第一電極242亦有利於拉開金屬與發光位置之距離,係用以獲得200 nm以上之距離之有效方法。 The method of making the distance between the center position of the light-emitting region of the organic light-emitting layer 244 and the first electrode 242 200 nm or more can be the same as the method described in the second embodiment, and in the present embodiment, the light transmittance is the same. An electrode 242 is also advantageous for pulling apart the distance between the metal and the illuminating position, and is an effective method for obtaining a distance of 200 nm or more.

再者,於圖16中,關於用以保護發光裝置240免受水分或氧之侵害之密封未圖示,但可使用與圖13同樣地利用絕緣層進行覆蓋之方法、或使用圖15所示之第二基板進行密封之方法等。 Further, in FIG. 16, the seal for protecting the light-emitting device 240 from moisture or oxygen is not shown, but a method of covering with an insulating layer in the same manner as in FIG. 13 or using the method shown in FIG. The second substrate is sealed and the like.

又,於圖16中,所描繪的是有機發光層244覆蓋於障壁245上而成為連續膜,但亦可如第一實施形態中所說明般,有機發光層244於障壁245之形成部分產生段割,或有機發光層244僅形成於經障壁245所分隔出之區域中。 Further, in FIG. 16, the organic light-emitting layer 244 is covered on the barrier 245 to form a continuous film. However, as described in the first embodiment, the organic light-emitting layer 244 may be formed in the formed portion of the barrier 245. The cut, or organic light-emitting layer 244 is formed only in the region separated by the barrier 245.

(發光裝置:第十七實施形態) (Light-emitting device: Seventeenth embodiment)

圖17係表示第十七實施形態之發光裝置之概略剖面圖。 Fig. 17 is a schematic cross-sectional view showing a light-emitting device of a seventeenth embodiment.

發光裝置250具有透光性或非透光性之第一基板251、反射層256、透光性之中間層257、透光性第一電極(下部電極)252、透明之第二電極(上部電極)253、及有機發光層254。反射層256、透光性之中間層257、透光性第一電極(下部電極)252、及透明之第二電極(上部電極)253依序積層於該第一基板251之一面251a上。有機發光層254形成於該第一電極252及第二電極253之間。又,於基板251之一面251a上形成有將第一電極252劃分成複數個特定區域的光反射性障壁(絕緣體)255。再者,中間層257視需要亦可省略。 The light-emitting device 250 has a light-transmitting or non-transmissive first substrate 251, a reflective layer 256, a translucent intermediate layer 257, a translucent first electrode (lower electrode) 252, and a transparent second electrode (upper electrode) 253, and an organic light-emitting layer 254. The reflective layer 256, the translucent intermediate layer 257, the translucent first electrode (lower electrode) 252, and the transparent second electrode (upper electrode) 253 are sequentially laminated on one surface 251a of the first substrate 251. The organic light emitting layer 254 is formed between the first electrode 252 and the second electrode 253. Further, a light reflective barrier (insulator) 255 that divides the first electrode 252 into a plurality of specific regions is formed on one surface 251a of the substrate 251. Furthermore, the intermediate layer 257 may be omitted as needed.

本實施形態之發光裝置250於具有反射層256、及透光性之中間層257之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 250 of the present embodiment is different from the first embodiment in that it has a reflective layer 256 and a translucent intermediate layer 257. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於該實施形態中,亦較佳為將有機發光層254之發光區域之中心位置與第一電極252的距離設為200 nm以上。將有機發光層254之發光區域之中心位置與第一電極252之間的距離設為200 nm以上之原因如第二實施形態中所說明般,在於防止因基於與金屬之共振之表面離體子現象所引 起之光提取損失。 In this embodiment, it is also preferable that the distance between the center position of the light-emitting region of the organic light-emitting layer 254 and the first electrode 252 is 200 nm or more. The reason why the distance between the center position of the light-emitting region of the organic light-emitting layer 254 and the first electrode 252 is 200 nm or more is as described in the second embodiment, in that the surface is prevented from being separated from the surface by resonance with the metal. Phenomenon The light extraction loss.

使有機層254之發光區域之中心位置與第一電極252的距離成為200 nm以上之方法可使用第十四實施形態中所說明之方法,於本實施形態中,中間層257及透光性第一電極252亦有利於拉開金屬與發光位置之距離,可謂用以獲得200 nm以上之距離之有效方法。 The method described in the fourteenth embodiment can be used as a method of setting the distance between the center position of the light-emitting region of the organic layer 254 and the first electrode 252 to 200 nm or more. In the present embodiment, the intermediate layer 257 and the light-transmitting property are used. An electrode 252 is also advantageous for pulling apart the distance between the metal and the light-emitting position, which is an effective method for obtaining a distance of 200 nm or more.

再者,於圖17中,關於用以保護發光裝置250免受水分或氧之侵害之密封未圖示,但可使用與圖13同樣地利用絕緣層進行覆蓋之方法、或使用圖15所示之第二基板進行密封之方法等。 In addition, in FIG. 17, the seal for protecting the light-emitting device 250 from moisture or oxygen is not shown, but a method of covering with an insulating layer as in FIG. 13 or using the method shown in FIG. The second substrate is sealed and the like.

又,於圖17中,所描繪的是有機發光層254覆蓋於障壁255上而成為連續膜。然而,亦可如第一實施形態中所說明般,有機發光層254於障壁255之形成部分產生段割。有機發光層254亦可為僅形成於經障壁255所分隔出之區域中之形態。 Further, in Fig. 17, it is depicted that the organic light-emitting layer 254 is covered on the barrier 255 to form a continuous film. However, as described in the first embodiment, the organic light-emitting layer 254 may be cut at the portion where the barrier 255 is formed. The organic light-emitting layer 254 may also be formed only in a region partitioned by the barrier 255.

(發光裝置:第十八實施形態) (Light-emitting device: Eighteenth Embodiment)

圖18係表示第十八實施形態之發光裝置之概略剖面圖。 Fig. 18 is a schematic cross-sectional view showing a light-emitting device of an eighteenth embodiment.

發光裝置260具有透光性或非透光性之第一基板261、反射層266、透光性之中間層267、透光性第一電極(下部電極)262、透光性第二電極(上部電極)263、及有機發光層264。反射層266、透光性之中間層267、透光性第一電極(下部電極)262、及透光性第二電極(上部電極)263依序積層於該第一基板261之一面261a上。有機發光層264形成於第一電極262及第二電極263之間。又,於第一基板261之 一面261a上形成有將第一電極262劃分成複數個特定區域的光反射性障壁(絕緣體)265。 The light-emitting device 260 has a light-transmissive or non-transmissive first substrate 261, a reflective layer 266, a translucent intermediate layer 267, a translucent first electrode (lower electrode) 262, and a translucent second electrode (upper portion Electrode) 263 and organic light-emitting layer 264. The reflective layer 266, the translucent intermediate layer 267, the translucent first electrode (lower electrode) 262, and the translucent second electrode (upper electrode) 263 are sequentially laminated on one surface 261a of the first substrate 261. The organic light emitting layer 264 is formed between the first electrode 262 and the second electrode 263. Moreover, on the first substrate 261 A light reflective barrier (insulator) 265 that divides the first electrode 262 into a plurality of specific regions is formed on one surface 261a.

於本實施形態中,反射層266為導電性,第一電極262與反射層266經由形成於特定位置上之中間層267之通孔(連接區域)P而電性連接。 In the present embodiment, the reflective layer 266 is electrically conductive, and the first electrode 262 and the reflective layer 266 are electrically connected via a via hole (connection region) P of the intermediate layer 267 formed at a specific position.

本實施形態之發光裝置260於具有反射層266、及中間層267之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 260 of the present embodiment is different from the first embodiment in that it has a reflective layer 266 and an intermediate layer 267. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於圖18中,將光於中間層267中通過而擴散之路徑阻斷,從而就光提取之觀點而言較佳。又,反射層266亦可發揮降低配線電阻之作用。 In Fig. 18, the path through which the light passes through the intermediate layer 267 is blocked, so that it is preferable from the viewpoint of light extraction. Further, the reflective layer 266 can also function to reduce the wiring resistance.

再者,於圖18中,關於用以保護發光裝置260免受水分或氧之侵害之密封未圖示,但可使用與圖13同樣地利用絕緣層進行覆蓋之方法、或使用圖15所示之第二基板進行密封之方法等。 In addition, in FIG. 18, the seal for protecting the light-emitting device 260 from moisture or oxygen is not shown, but a method of covering with an insulating layer in the same manner as in FIG. 13 or using the method shown in FIG. The second substrate is sealed and the like.

又,於圖18中,所描繪的是有機發光層264覆蓋於障壁265上而成為連續膜。然而,亦可如第一實施形態中所說明般,有機發光層264於障壁265之形成部分產生段割。有機發光層264亦可為僅形成於經障壁265所分隔出之區域中之形態。 Further, in Fig. 18, it is depicted that the organic light-emitting layer 264 covers the barrier 265 to form a continuous film. However, as described in the first embodiment, the organic light-emitting layer 264 may be cut at the portion where the barrier 265 is formed. The organic light-emitting layer 264 may also be formed only in a region partitioned by the barrier 265.

(發光裝置:第十九實施形態) (Light-emitting device: nineteenth embodiment)

圖19係表示第十九實施形態之發光裝置之概略剖面圖。 Fig. 19 is a schematic cross-sectional view showing a light-emitting device of a nineteenth embodiment.

發光裝置270具有透光性或非透光性之第一基板271、反射層276、透光性之中間層277、透光性第一電極(下部電 極)272、透明之第二電極(上部電極)273、及有機發光層274。反射層276、透光性之中間層277、透光性第一電極(下部電極)272、及透明之第二電極(上部電極)273依序積層於第一基板271之一面271a上。有機發光層274形成於第一電極272及第二電極273之間。又,於第一基板271之一面271a上形成有將第一電極272劃分成複數個特定區域的光反射性障壁(絕緣體)275。 The light-emitting device 270 has a light-transmitting or non-transmissive first substrate 271, a reflective layer 276, a translucent intermediate layer 277, and a translucent first electrode (lower electric) The electrode 272, the transparent second electrode (upper electrode) 273, and the organic light-emitting layer 274. The reflective layer 276, the translucent intermediate layer 277, the translucent first electrode (lower electrode) 272, and the transparent second electrode (upper electrode) 273 are sequentially laminated on one surface 271a of the first substrate 271. The organic light emitting layer 274 is formed between the first electrode 272 and the second electrode 273. Further, a light reflective barrier (insulator) 275 that divides the first electrode 272 into a plurality of specific regions is formed on one surface 271a of the first substrate 271.

本實施形態之發光裝置270於具有反射層276、透光性之中間層277、第二基板278、低折射率層279、水分吸收構件(水分吸收層)81、及密封層282之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 270 of the present embodiment has a reflective layer 276, a translucent intermediate layer 277, a second substrate 278, a low refractive index layer 279, a moisture absorbing member (moisture absorbing layer) 81, and a sealing layer 282. One embodiment is different. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

以與第一基板271對向之方式配置透光性第二基板278。於該第二基板278與第二電極273之間配置低折射率層279、及水分吸收構件(水分吸收層)281。又,於第一基板271與第二基板276之間的各層之周面上形成有防止水分或氧自外部浸入發光裝置270之內部之密封層282。 The translucent second substrate 278 is disposed to face the first substrate 271. A low refractive index layer 279 and a moisture absorbing member (moisture absorbing layer) 281 are disposed between the second substrate 278 and the second electrode 273. Further, a sealing layer 282 for preventing moisture or oxygen from entering the inside of the light-emitting device 270 from the outside is formed on the circumferential surface of each layer between the first substrate 271 and the second substrate 276.

於本實施形態中,反射層276為導電性,第一電極272與反射層276經由形成於特定位置上之中間層277之通孔(連接區域)P而電性連接。於該實施形態中,將光於中間層277中通過而擴散之路徑阻斷,從而就光提取之觀點而言較佳。 In the present embodiment, the reflective layer 276 is electrically conductive, and the first electrode 272 and the reflective layer 276 are electrically connected via a via hole (connection region) P of the intermediate layer 277 formed at a specific position. In this embodiment, the path through which the light passes through the intermediate layer 277 is blocked, which is preferable from the viewpoint of light extraction.

進而,為了藉由以與第一基板271對向之方式形成透光性第二基板278來防止水分或氧自外部浸入發光裝置270之內部,而利用密封層282密封周圍。 Further, in order to prevent moisture or oxygen from entering the inside of the light-emitting device 270 from the outside by forming the light-transmissive second substrate 278 so as to face the first substrate 271, the periphery is sealed by the sealing layer 282.

第二基板(密封基板)278需為透光性,例如可應用玻璃、膜等硬質之透明基板。 The second substrate (sealing substrate) 278 is required to be translucent, and for example, a hard transparent substrate such as glass or film can be applied.

水分吸收構件281保護發光裝置270免受水分或氧之侵害。如圖19所示,於在成為光射出之路徑之部分配置水分吸收構件281之情形時,水分吸收構件281要求為透光性。於圖19中,顯示於光射出之路徑中配置水分吸收構件281之情形。然而,亦可為於自光射出之路徑偏離之周邊部分配置水分吸收構件之構成。又,若密封層282具有充分之防止水分透過之能力,則亦可不特別形成水分吸收構件。 The moisture absorbing member 281 protects the light emitting device 270 from moisture or oxygen. As shown in FIG. 19, when the moisture absorbing member 281 is disposed in a portion where the light is emitted, the moisture absorbing member 281 is required to be translucent. In Fig. 19, the case where the moisture absorbing member 281 is disposed in the path of light emission is shown. However, it is also possible to arrange the configuration of the moisture absorbing member at the peripheral portion from which the path of the light emission is deviated. Further, if the sealing layer 282 has sufficient ability to prevent moisture from permeating, the moisture absorbing member may not be formed in particular.

低折射率層279只要為透光性之固體層、例如無機膜與樹脂膜之積層體即可。又,低折射率層279亦較佳為空氣層、乾燥氮氣層等氣體層、或減壓氣體層、真空層等。於將低折射率層279設為氣體層之情形時,只要於第二基板278與第二電極(上部電極)273之間夾入例如間隔件等以保持特定之間隔、並於邊緣部分進行密封即可。 The low refractive index layer 279 may be a transparent solid layer, for example, a laminate of an inorganic film and a resin film. Further, the low refractive index layer 279 is also preferably a gas layer such as an air layer or a dry nitrogen gas layer, a reduced pressure gas layer, a vacuum layer or the like. In the case where the low refractive index layer 279 is a gas layer, for example, a spacer or the like is interposed between the second substrate 278 and the second electrode (upper electrode) 273 to maintain a specific interval and to be sealed at the edge portion. Just fine.

上述低折射率層279最佳為氣體層。氣體層例如可包含空氣、氮氣、氬氣等各種氣體,氣體之種類並無特別限定。其中,就抑制因與有機層274之反應所引起之特性劣化的觀點而言,較理想的是使用非活性氣體。 The low refractive index layer 279 is preferably a gas layer. The gas layer may contain various gases such as air, nitrogen, and argon, and the type of the gas is not particularly limited. Among them, from the viewpoint of suppressing deterioration of characteristics due to reaction with the organic layer 274, it is preferred to use an inert gas.

就抑制因水分浸入有機發光層274中所引起之特性劣化之觀點而言,於大氣壓下,空氣之折射率約為1.000293,氮氣之折射率約為1.000297,氬氣之折射率為1.000281。即便包含其他氣體,亦可將氣體之折射率視作約1.000。 From the viewpoint of suppressing deterioration of characteristics due to moisture intrusion into the organic light-emitting layer 274, the refractive index of air is about 1.000293 at atmospheric pressure, the refractive index of nitrogen is about 1.000297, and the refractive index of argon is 1.000281. Even if other gases are included, the refractive index of the gas can be regarded as about 1.000.

可認為即便壓力變化氣體之折射率亦幾乎未變化。因 此,氣體層之壓力可為任意,可為大氣壓(1.01325×105 Pa),亦可相對於大氣壓而為減壓狀態,亦可為加壓狀態。於減壓狀態之情形時,儘管於現實中不存在絕對真空,但只要為維持氣體層6之形態之狀態,則亦可為例如高真空狀態(0.1 Pa~10-5 Pa)或超高真空狀態(10-5 Pa以下)。 It is considered that the refractive index of the gas even if it is changed is hardly changed. Therefore, the pressure of the gas layer may be any, and may be atmospheric pressure (1.01325 × 105 Pa), or may be a reduced pressure state with respect to atmospheric pressure, or may be a pressurized state. In the case of the decompressed state, although there is no absolute vacuum in reality, it may be, for example, a high vacuum state (0.1 Pa to 10 -5 Pa) or an ultra-high vacuum as long as the state of the gas layer 6 is maintained. Status (10 -5 Pa or less).

即,無論氣體之壓力如何,需於有機發光層274與第二基板278互不接觸之情況下設定特定之距離進行配置,於有機層274與第二基板278之間形成包含厚度大致固定之氣體層之低折射率層279。於以下之說明中,將包含氣體層之低折射率層279之折射率設為1.000。 That is, regardless of the pressure of the gas, a specific distance is set when the organic light-emitting layer 274 and the second substrate 278 are not in contact with each other, and a gas having a substantially constant thickness is formed between the organic layer 274 and the second substrate 278. A low refractive index layer 279 of the layer. In the following description, the refractive index of the low refractive index layer 279 including the gas layer was set to 1.000.

於該實施形態中,於低折射率層279為氣體層之情形時,利用與第一實施形態中所說明者之同樣之機制,所發出之光被提取至包含氣體層之低折射率層279。由於氣體層與外部之折射率差於實質上大致為0,故而自氣體層射出之光經由第二基板278被提取至外部。 In the embodiment, when the low refractive index layer 279 is a gas layer, the emitted light is extracted to the low refractive index layer 279 containing the gas layer by the same mechanism as that described in the first embodiment. . Since the refractive index difference between the gas layer and the outside is substantially zero, the light emitted from the gas layer is extracted to the outside via the second substrate 278.

於低折射率層279不為氣體之情形時,配置其折射率處於第二基板278之折射率值與1.0之間的低折射率層279。折射率之值越接近1.0,則光提取效率越高,於折射率之值與玻璃相同之情形時,大部分之光於該層或包含玻璃等之第二基板278中導波而擴散,效果消失。 When the low refractive index layer 279 is not a gas, the low refractive index layer 279 whose refractive index is between the refractive index value of the second substrate 278 and 1.0 is disposed. The closer the value of the refractive index is to 1.0, the higher the light extraction efficiency. When the value of the refractive index is the same as that of the glass, most of the light is guided and diffused in the layer or the second substrate 278 containing glass or the like. disappear.

再者,於圖19中,所描繪的是有機發光層274覆蓋於障壁275上而成為連續膜。亦可如第一實施形態中所說明般,有機發光層274於障壁275之形成部分產生段割。有機 發光層274亦可僅形成於經障壁275所分隔出之區域中。 Further, in Fig. 19, it is depicted that the organic light-emitting layer 274 covers the barrier 275 to form a continuous film. Alternatively, as described in the first embodiment, the organic light-emitting layer 274 may be cut at a portion where the barrier 275 is formed. organic The light-emitting layer 274 may also be formed only in a region separated by the barrier 275.

又,於未設置光反射性障壁275而僅形成低折射率層279之情形時,於第二電極273與低折射率層279之界面上跳回之光反覆進行單向反射而於面擴展方向上擴散,光提取效率並未那麼提高。因此,藉由組合使用光反射性障壁275與低折射率層279,可獲得光提取效率之大幅度之提高效果。 Further, when the light reflective barrier 275 is not provided and only the low refractive index layer 279 is formed, the light jumped back at the interface between the second electrode 273 and the low refractive index layer 279 is unidirectionally reflected in the direction of surface expansion. On the diffusion, the light extraction efficiency is not so improved. Therefore, by using the light-reflective barrier 275 and the low-refractive-index layer 279 in combination, a large effect of improving the light extraction efficiency can be obtained.

(發光裝置:第二十實施形態) (Light-emitting device: twentieth embodiment)

圖20A及20B係表示第八實施形態之發光裝置之概略剖面圖。 20A and 20B are schematic cross-sectional views showing a light-emitting device of an eighth embodiment.

發光裝置290具有非透光性之第一基板291、透光性之中間層296、透光性第一電極(下部電極)292、透明之第二電極(上部電極)293、及有機發光層294。透光性之中間層296、透光性第一電極(下部電極)292、及透明之第二電極(上部電極)293依序積層於基板291之一面291a上。有機發光層294形成於第一電極292及第二電極293之間。又,於基板291之一面291a上形成有將第一電極292劃分成複數個特定區域的光反射性障壁(絕緣體)295。 The light-emitting device 290 has a non-transparent first substrate 291, a translucent intermediate layer 296, a translucent first electrode (lower electrode) 292, a transparent second electrode (upper electrode) 293, and an organic light-emitting layer 294. . The translucent intermediate layer 296, the translucent first electrode (lower electrode) 292, and the transparent second electrode (upper electrode) 293 are sequentially laminated on one surface 291a of the substrate 291. The organic light emitting layer 294 is formed between the first electrode 292 and the second electrode 293. Further, a light reflective barrier (insulator) 295 that divides the first electrode 292 into a plurality of specific regions is formed on one surface 291a of the substrate 291.

本實施形態之發光裝置290於具有透光性之中間層296之方面與第一實施形態不同。其他構成與第一實施形態相同,因此省略其說明。 The light-emitting device 290 of the present embodiment is different from the first embodiment in that it has a translucent intermediate layer 296. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

第一基板291可具有導電性,亦可不具有導電性。於第一基板291為導電性之情形時,如圖20B所示般,可經由中間層296之通孔(連接區域)而電性連接第一電極272與第一 基板271。又,中間層296視需要亦可省略。 The first substrate 291 may or may not have conductivity. When the first substrate 291 is electrically conductive, as shown in FIG. 20B, the first electrode 272 and the first electrode can be electrically connected via the through hole (connection region) of the intermediate layer 296. Substrate 271. Further, the intermediate layer 296 may be omitted as needed.

於圖20A中,存在光於中間層96中通過而擴散之路徑,亦較佳為如圖20B所示般,藉由使中間層96圖案化而將該路徑阻斷,從而提高光提取效率。 In FIG. 20A, there is a path in which light is diffused in the intermediate layer 96. It is also preferable to block the path by patterning the intermediate layer 96 as shown in FIG. 20B, thereby improving light extraction efficiency.

再者,於圖20A及20B中,關於用以保護發光裝置90免受水分或氧之侵害之密封未圖示,但可使用與圖13同樣地利用絕緣層進行覆蓋之方法、或使用圖15所示之第二基板進行密封之方法等。 Further, in FIGS. 20A and 20B, the seal for protecting the light-emitting device 90 from moisture or oxygen is not shown, but a method of covering with an insulating layer as in FIG. 13 or using FIG. 15 may be used. The method of sealing the second substrate shown and the like.

又,於圖20A及20B中,所描繪的是有機發光層294覆蓋於障壁295上而成為連續膜。然而,亦可如第一實施形態中所說明般,有機發光層94於障壁95之形成部分產生段割。有機發光層94亦可僅形成於經障壁95所分隔出之區域中。 Further, in FIGS. 20A and 20B, it is depicted that the organic light-emitting layer 294 is covered on the barrier 295 to form a continuous film. However, as described in the first embodiment, the organic light-emitting layer 94 may be cut at the portion where the barrier ribs 95 are formed. The organic light-emitting layer 94 may also be formed only in a region partitioned by the barrier ribs 95.

(發光裝置:第二十一實施形態) (Light-emitting device: twenty-first embodiment)

圖21係表示第二十一實施形態之發光裝置之概略剖面圖。 Figure 21 is a schematic cross-sectional view showing a light-emitting device of a twenty-first embodiment.

發光裝置310具有透光性或非透光性基板311、第一電極(下部電極)322、透明之第二電極(上部電極)323、及有機發光層324。第一電極(下部電極)322、第二電極(上部電極)323依序積層於基板321之一面321a上。有機發光層324形成於第一電極322及第二電極323之間。又,於基板321上形成有將第一電極322劃分成複數個特定區域的光反射性障壁(絕緣層)325。第一電極322包含透光性導電層322a與反射金屬層322b。再者,於本實施形態中,對第一電極 322包含透光性導電層322a與反射金屬層322b之構成進行說明,但第一電極322亦可為單層構造。 The light-emitting device 310 has a light-transmitting or non-transmissive substrate 311, a first electrode (lower electrode) 322, a transparent second electrode (upper electrode) 323, and an organic light-emitting layer 324. The first electrode (lower electrode) 322 and the second electrode (upper electrode) 323 are sequentially laminated on one surface 321a of the substrate 321 . The organic light emitting layer 324 is formed between the first electrode 322 and the second electrode 323. Further, a light reflective barrier (insulating layer) 325 that divides the first electrode 322 into a plurality of specific regions is formed on the substrate 321 . The first electrode 322 includes a light-transmitting conductive layer 322a and a reflective metal layer 322b. Furthermore, in the embodiment, the first electrode is applied 322 includes a configuration in which the light-transmitting conductive layer 322a and the reflective metal layer 322b are described. However, the first electrode 322 may have a single-layer structure.

本實施形態之障壁425之構成與第一實施形態之障壁15不同。其他構成與第一實施形態相同,因此省略其說明。 The configuration of the barrier 425 of the present embodiment is different from that of the barrier 15 of the first embodiment. The other configuration is the same as that of the first embodiment, and thus the description thereof will be omitted.

於本實施形態中,障壁325包含障壁325a、障壁325b、及光反射膜325c。光反射膜325c係以覆蓋障壁325a之方式形成。障壁325b係以覆蓋光反射膜325c之方式形成。 In the present embodiment, the barrier 325 includes a barrier 325a, a barrier 325b, and a light reflecting film 325c. The light reflecting film 325c is formed to cover the barrier 325a. The barrier 325b is formed to cover the light reflecting film 325c.

障壁325a可為透明、白色、黑色中之任一顏色。於障壁425a為黑色之情形時,障壁325a亦可具備防止外光反射之功能。 The barrier 325a may be any of transparent, white, and black. When the barrier 425a is black, the barrier 325a may also have a function of preventing external light from being reflected.

光反射膜325c例如可以包含銀(Ag)或鋁(Al)之方式形成。光反射膜325c亦可由與反射金屬層322b相同之材料所形成。再者,於本實施形態中,亦可不形成反射金屬層322b。 The light reflecting film 325c may be formed, for example, in a form of silver (Ag) or aluminum (Al). The light reflecting film 325c may also be formed of the same material as the reflective metal layer 322b. Further, in the present embodiment, the reflective metal layer 322b may not be formed.

障壁325b具有透光性、光反射性、及/或光散射性。自有機發光層322射出並沿橫方向傳播之光可由光反射膜325c反射。為了改變光之行進方向而提高光之提取效率,較佳為障壁325b具有光散射性。又,若障壁425b覆蓋第一電極(下部電極)422之邊緣,則可防止第一電極(下部電極)422與第二電極(上部電極)423之短路,就良率提高之方面而言較佳。 The barrier 325b has light transmissivity, light reflectivity, and/or light scattering properties. Light emitted from the organic light-emitting layer 322 and propagating in the lateral direction may be reflected by the light-reflecting film 325c. In order to improve the light extraction efficiency in order to change the direction of light travel, it is preferable that the barrier 325b has light scattering properties. Further, if the barrier 425b covers the edge of the first electrode (lower electrode) 422, the short circuit between the first electrode (lower electrode) 422 and the second electrode (upper electrode) 423 can be prevented, which is preferable in terms of improvement in yield. .

(障壁之剖面形狀例) (Example of the profile of the barrier)

障壁之剖面形狀可設為各種形狀。圖22A~圖22E係表示障壁之剖面形狀例之剖面圖。 The cross-sectional shape of the barrier can be set to various shapes. 22A to 22E are cross-sectional views showing an example of a cross-sectional shape of a barrier rib.

於圖22A中,劃分形成基板131上之第一電極(下部電極)132之障壁133係以成為上部變窄之梯形之方式形成。 In FIG. 22A, the barrier rib 133 which divides the first electrode (lower electrode) 132 on the substrate 131 is formed in a trapezoidal shape in which the upper portion is narrowed.

於圖22B中,劃分形成基板131上之第一電極(下部電極)132之障壁134係以成為上部變寬之梯形之方式形成。 In FIG. 22B, the barrier 134 which divides the first electrode (lower electrode) 132 on the substrate 131 is formed in a trapezoidal shape in which the upper portion is widened.

於圖22C中,劃分形成基板131上之第一電極(下部電極)132之障壁135係以使上部成為半圓形或半橢圓形之方式形成。 In FIG. 22C, the barrier 135 which divides the first electrode (lower electrode) 132 on the substrate 131 is formed such that the upper portion is semicircular or semi-elliptical.

於圖22D中,劃分形成基板131上之第一電極(下部電極)132之障壁136係以使上部成為半圓形、且頂部成為平坦面之方式形成。 In FIG. 22D, the barrier 136 which divides the first electrode (lower electrode) 132 on the substrate 131 is formed such that the upper portion is semicircular and the top portion is a flat surface.

於圖22E中,劃分形成基板131上之第一電極(下部電極)132之障壁137係以使上部成為三角形之方式形成。 In FIG. 22E, the barrier 137 which divides the first electrode (lower electrode) 132 on the substrate 131 is formed such that the upper portion is triangular.

該等障壁之形狀之中,如圖22A、圖22C、圖22D、及圖22E般朝向一側變寬之形狀具有使光更易射出之效果。上述效果亦對發光分佈造成影響,因此有利於應用於顯示裝置中之情形時之廣視野角化。就該廣視野角之觀點而言,最佳為圖22E所示之障壁137之形狀,另一方面,為了抑制重疊於障壁上而成膜之層於邊緣部分割裂,較佳為如圖22C、圖22D般障壁135、136帶弧度之形狀。 Among the shapes of the barrier ribs, the shape which is widened toward one side as shown in FIGS. 22A, 22C, 22D, and 22E has an effect of making light more easily emitted. The above effects also affect the light emission distribution, and thus are advantageous for wide viewing angles when applied to a display device. From the viewpoint of the wide viewing angle, it is preferably the shape of the barrier 137 shown in FIG. 22E, and on the other hand, in order to suppress the layer formed by laminating the barrier layer from being split at the edge portion, it is preferably as shown in FIG. 22C. Figure 22D shows the shape of the barrier 135, 136 with a curvature.

另一方面,作為較佳地用於被動驅動有機EL顯示裝置中之方法,形成如圖22B之倒錐形狀之障壁134,藉此,於將第二電極(上部電極)形成於整個面時,可於障壁134之邊緣部分產生段割而使第二電極(上部電極)形成為條紋狀。進而,於以個人使用為主要目的之有機EL顯示裝置中,圖 22B之障壁134之構造對於縮小視野角而發揮防窺護目鏡之作用之方面亦有效。 On the other hand, as a method for preferably driving the organic EL display device passively, a barrier 134 having an inverted tapered shape as shown in FIG. 22B is formed, whereby when the second electrode (upper electrode) is formed on the entire surface, A segment cut may be formed at an edge portion of the barrier 134 to form a second electrode (upper electrode) in a stripe shape. Further, in an organic EL display device whose main purpose is personal use, The structure of the barrier 134 of 22B is also effective in reducing the viewing angle and functioning as an anti-spy goggle.

(障壁之平面形狀例) (Example of the plane shape of the barrier)

障壁之平面形狀可設為各種形狀。圖23A~圖23I係表示障壁之平面形狀例之剖面圖。 The planar shape of the barrier can be set to various shapes. 23A to 23I are cross-sectional views showing an example of a planar shape of a barrier rib.

圖23A係將各區域形成為四角形者。 Fig. 23A is a case where each region is formed into a quadrangle.

圖23B係將各區域形成為圓形者。若使各區域成為圓形,則有經障壁反射之光之分佈於各方向上相等之優點。又,於利用塗佈法形成有機層之情形等時,若如四角形般具有角部,則存在產生塗佈液僅於該部分不易濕潤擴散之課題的情況,於圓形之情形時無角部,因此可使塗佈液均勻地擴散。再者,於該圖23B中,將各區域描繪成圓形,亦可形成為橢圓、或於四角形之角部帶弧度之形狀等。 Fig. 23B is a case where each region is formed into a circle. If each of the regions is made circular, there is an advantage that the distribution of the light reflected by the barrier is equal in all directions. In the case where the organic layer is formed by the coating method, if the corner portion is provided as a square shape, there is a problem that the coating liquid is less likely to be wet-diffused only in the portion, and in the case of a circle, there is no corner portion. Therefore, the coating liquid can be uniformly diffused. Further, in FIG. 23B, each region is drawn in a circular shape, and may be formed into an ellipse or a shape having a curvature in a corner portion of a quadrangle.

圖23C係將各區域之配置設為六方配置者。藉由設為六方配置,與圖23C之實施形態相比,可提高發光區域之比率。 Fig. 23C shows the arrangement of each area as a six-way configuration. By setting it as a hexagonal arrangement, the ratio of the light-emitting region can be improved as compared with the embodiment of Fig. 23C.

圖23D係六方配置六角形區域者。 Figure 23D is a hexagonal configuration of hexagonal regions.

圖23E係於各區域之一部分配置未形成障壁之區域者。藉此,可防止第二電極覆蓋障壁上時產生段割,提高良率及可靠性。 Fig. 23E is a portion in which a region where no barrier is formed is disposed in one of the regions. Thereby, it is possible to prevent segment cutting when the second electrode covers the barrier, thereby improving yield and reliability.

圖23F係使於各區域之一部分未形成障壁之區域之位置不處於一直線上的例。 Fig. 23F is an example in which the position of the region where the barrier is not formed in one of the regions is not in a straight line.

於圖23E所示之實施形態之情形時,於未形成障壁之區域中,沿橫方向導波之光直至達到裝置之端部為止亦不會 經反射/散射,從而損失。相對於此,於圖23F中,成為於未形成障壁之區域中,沿橫方向導波而自某區域進入另一區域之光於另一區域中遇到障壁的構造,而可抑制光之損失。於圖23G、圖23H、圖23I係於圖23D、圖23B、圖23C之構成中分別於各區域之一部分配置未形成障壁之區域者。 In the case of the embodiment shown in Fig. 23E, in the region where the barrier is not formed, the light guided in the lateral direction does not reach the end of the device. It is reflected/scattered and thus lost. On the other hand, in FIG. 23F, in the region where the barrier is not formed, the light guided in the lateral direction and the light entering the other region from the certain region encounters the barrier in the other region, and the loss of light can be suppressed. . In FIGS. 23G, 23H, and 23I, in the configuration of FIG. 23D, FIG. 23B, and FIG. 23C, each of the regions is disposed in a region where no barrier is formed.

(障壁之構造例) (Structural example of barrier)

於上述各實施形態中,表示利用白色樹脂等光反射性之樹脂形成障壁本體之例,但障壁之構造並不限定於此。 In each of the above embodiments, the barrier body is formed of a light-reflective resin such as a white resin, but the structure of the barrier is not limited thereto.

圖24A~圖24F係表示用以對障壁賦予光反射性之構造例之剖面圖。 24A to 24F are cross-sectional views showing a structural example for imparting light reflectivity to a barrier.

於圖24A中,劃分形成於基板141上之第一電極(下部電極)142之障壁143包含樹脂層143a、光反射性金屬層143b。 In FIG. 24A, the barrier 143 which divides the first electrode (lower electrode) 142 formed on the substrate 141 includes a resin layer 143a and a light reflective metal layer 143b.

於圖24B中,劃分形成於基板141上之第一電極(下部電極)142之障壁144包含反射性金屬或樹脂層。並且,該障壁144係與第一電極142相隔地配置於第一電極(下部電極)142彼此之間。藉此,確保鄰接之第一電極(下部電極)142彼此之絕緣性。 In FIG. 24B, the barrier rib 144 which divides the first electrode (lower electrode) 142 formed on the substrate 141 contains a reflective metal or resin layer. Further, the barrier rib 144 is disposed between the first electrode (lower electrode) 142 spaced apart from the first electrode 142. Thereby, the insulation of the adjacent first electrodes (lower electrodes) 142 is ensured.

於圖24C中,劃分形成於基板141上之第一電極(下部電極)142之障壁145包含反射性金屬體145a、及覆蓋其之樹脂層145b。於該形態中,反射性金屬體145a之上部亦可經樹脂層145b覆蓋,若考慮到光自該區域傳播之可能性,則較佳為以使樹脂層145b之上部之厚度變薄之方式形成。進 而,亦較佳為未於該部分形成樹脂之形狀。 In FIG. 24C, the barrier 145 which divides the first electrode (lower electrode) 142 formed on the substrate 141 includes a reflective metal body 145a and a resin layer 145b covering the same. In this embodiment, the upper portion of the reflective metal body 145a may be covered with the resin layer 145b. If the possibility of light propagating from the region is considered, it is preferable to form the thickness of the upper portion of the resin layer 145b. . Enter Further, it is also preferable that the shape of the resin is not formed in the portion.

於圖24D中,劃分形成於基板141上之第一電極(下部電極)142之障壁146包含反射性金屬體146a、覆蓋其之樹脂層146b,進而包含上部反射層146c。 In FIG. 24D, the barrier 146 which divides the first electrode (lower electrode) 142 formed on the substrate 141 includes a reflective metal body 146a, a resin layer 146b covering the same, and further includes an upper reflective layer 146c.

於圖24E中,劃分形成於基板141上之第一電極(下部電極)142之障壁147包含覆蓋第一電極(下部電極)142之至少側面之反射性金屬層。 In FIG. 24E, the barrier 147 partitioning the first electrode (lower electrode) 142 formed on the substrate 141 includes a reflective metal layer covering at least a side surface of the first electrode (lower electrode) 142.

於圖24F中,劃分形成於基板141上之第一電極(下部電極)142之障壁148包含絕緣性樹脂體148a、及覆蓋該絕緣性樹脂體148a之反射性金屬層148b。並且,反射性金屬層148b係以其下端不接觸第一電極(下部電極)142之方式形成,藉此確保相互鄰接之第一電極(下部電極)142彼此之絕緣性。 In FIG. 24F, the barrier 148 which divides the first electrode (lower electrode) 142 formed on the substrate 141 includes an insulating resin body 148a and a reflective metal layer 148b covering the insulating resin body 148a. Further, the reflective metal layer 148b is formed such that the lower end thereof does not contact the first electrode (lower electrode) 142, thereby ensuring insulation between the adjacent first electrodes (lower electrodes) 142.

(顯示裝置:第二十二實施形態) (Display device: Twenty-second embodiment)

圖25係表示第二十二實施形態之顯示裝置之概略剖面圖。 Figure 25 is a schematic cross-sectional view showing a display device of a twenty-second embodiment.

於該實施形態中,表示使發光裝置主動矩陣驅動之頂部發光型之有機EL顯示裝置。有機EL顯示裝置(顯示裝置)150具備包含透光性或非透光性基板151、第一電極(下部電極)152、透光性第二電極(上部電極)153、有機發光層154、及光反射性障壁(絕緣層)155之發光裝置157。有機發光層154形成於第一電極152及第二電極153之間。障壁155將第一電極152劃分成複數個特定區域。 In this embodiment, a top emission type organic EL display device that drives an active matrix of a light-emitting device is shown. The organic EL display device (display device) 150 includes a translucent or non-transmissive substrate 151, a first electrode (lower electrode) 152, a translucent second electrode (upper electrode) 153, an organic light-emitting layer 154, and light. A light-emitting device 157 of a reflective barrier (insulating layer) 155. The organic light emitting layer 154 is formed between the first electrode 152 and the second electrode 153. The barrier 155 divides the first electrode 152 into a plurality of specific regions.

又,於基板151與第一電極(下部電極)152之間形成有作 為驅動部之一例之主動矩陣驅動元件(驅動部)160。於基板151上形成有閘極電極160a、閘極氧化膜158。於閘極氧化膜158上形成有活性層160d、源極電極160b、汲極電極160c,進而形成有層間絕緣膜159。於層間絕緣膜159上設有接觸孔,使汲極電極160c與第一電極152電性接合。主動矩陣驅動元件160包含閘極電極160a、閘極氧化膜158、源極電極160b、汲極電極160c及活性層160d等。 Further, a film is formed between the substrate 151 and the first electrode (lower electrode) 152. It is an active matrix drive element (drive unit) 160 which is an example of a drive unit. A gate electrode 160a and a gate oxide film 158 are formed on the substrate 151. An active layer 160d, a source electrode 160b, and a drain electrode 160c are formed on the gate oxide film 158, and an interlayer insulating film 159 is further formed. A contact hole is formed in the interlayer insulating film 159 to electrically connect the drain electrode 160c and the first electrode 152. The active matrix driving element 160 includes a gate electrode 160a, a gate oxide film 158, a source electrode 160b, a drain electrode 160c, an active layer 160d, and the like.

控制發光裝置157之發光之主動矩陣驅動元件(驅動部)160作為開關用途及驅動用途而發揮功能。上述主動矩陣驅動元件160可使用公知之材料、構造及形成方法而形成。 The active matrix drive element (drive unit) 160 that controls the light emission of the light-emitting device 157 functions as a switch application and a drive application. The active matrix driving element 160 described above can be formed using well-known materials, structures, and forming methods.

作為活性層160d之材料,例如可列舉:非晶矽(amorphous silicon)、多晶矽(polysilicon)、微晶矽、硒化鎘等無機半導體材料,氧化鋅、氧化銦-氧化鎵-氧化鋅等氧化物半導體材料,或聚噻吩衍生物、噻吩低聚物、聚(對苯乙炔)衍生物、稠四苯、稠五苯等有機半導體材料。又,作為TFT之構造,例如可列舉:交錯型、逆交錯型、頂閘極型、共面型。 Examples of the material of the active layer 160d include inorganic semiconductor materials such as amorphous silicon, polysilicon, microcrystalline germanium, and cadmium selenide, and oxides such as zinc oxide and indium oxide-gallium oxide-zinc oxide. A semiconductor material, or an organic semiconductor material such as a polythiophene derivative, a thiophene oligomer, a poly(p-phenylacetylene) derivative, a condensed tetraphenyl, or a pentacene. Moreover, examples of the structure of the TFT include a staggered type, an inverted staggered type, a top gate type, and a coplanar type.

作為活性層160d之形成方法,可列舉:(1)於藉由電漿誘導化學氣相沈積(PECVD,plasma-enhanced chemical vapor deposition)法所成膜之非晶矽中離子摻雜雜質的方法;(2)藉由使用矽烷(SiH4)氣體之減壓化學氣相沈積(LPCVD,Low Pressure Chemical Vapor Deposition)法形成非晶矽,藉由固相成長法使非晶矽結晶化而獲得多晶矽 後,藉由離子植入法進行離子摻雜的方法;(3)藉由使用Si2H6氣體之LPCVD法或使用SiH4氣體之PECVD法形成非晶矽,藉由準分子雷射等雷射進行退火,使非晶矽結晶化而獲得多晶矽後,進行離子摻雜的方法(低溫製程);(4)藉由LPCVD法或PECVD法形成多晶矽層,於1000℃以上之溫度下進行熱氧化,藉此形成閘極絕緣膜,於其上形成n+多晶矽之閘極電極,其後進行離子摻雜的方法(高溫製程);(5)藉由噴墨法等形成有機半導體材料之方法;(6)獲得有機半導體材料之單晶膜之方法等。 As a method of forming the active layer 160d, (1) a method of ion doping impurities in an amorphous germanium formed by a plasma-induced chemical vapor deposition (PECVD) method; (2) An amorphous germanium is formed by a low pressure chemical vapor deposition (LPCVD) method using a decane (SiH 4 ) gas, and the amorphous germanium is crystallized by a solid phase growth method to obtain a polycrystalline germanium. a method of ion doping by ion implantation; (3) forming an amorphous germanium by LPCVD using Si 2 H 6 gas or PECVD using SiH 4 gas, by laser such as excimer laser After annealing, crystallizing the amorphous germanium to obtain polycrystalline germanium, performing ion doping (low temperature process); (4) forming a polycrystalline germanium layer by LPCVD or PECVD, and performing thermal oxidation at a temperature of 1000 ° C or higher. Thereby forming a gate insulating film, forming a gate electrode of n + polysilicon thereon, followed by ion doping (high temperature process); (5) a method of forming an organic semiconductor material by an inkjet method or the like; 6) The square of the single crystal film of the organic semiconductor material is obtained. Wait.

閘極絕緣膜158可使用公知之材料而形成。例如可列舉:藉由PECVD法、LPCVD法等所形成之SiO2,或使多晶矽膜熱氧化而獲得之SiO2等。又,TFT之信號電極線、掃描電極線、共通電極線、第1驅動電極及第2驅動電極可使用公知之材料而形成,例如可列舉:鉭(Ta)、鋁(Al)、銅(Cu)等。 The gate insulating film 158 can be formed using a known material. For example, SiO 2 formed by a PECVD method, an LPCVD method, or the like, or SiO 2 obtained by thermally oxidizing a polycrystalline germanium film can be used. Further, the signal electrode line, the scan electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT can be formed using a known material, and examples thereof include tantalum (Ta), aluminum (Al), and copper (Cu). )Wait.

層間絕緣膜159可使用公知之材料而形成,例如可列舉:氧化矽(SiO2)、氮化矽(SiN、或Si2N4)、氧化鉭(TaO或Ta2O5)等無機材料,或丙烯酸樹脂、抗蝕劑材料等有機材料等。又,作為其形成方法,可列舉:化學氣相沈積(CVD)法、真空蒸鍍法等乾式製程,旋轉塗佈法等濕式製程。又,視需要亦可藉由光微影法等進行圖案化。 The interlayer insulating film 159 can be formed using a known material, and examples thereof include inorganic materials such as cerium oxide (SiO 2 ), cerium nitride (SiN or Si 2 N 4 ), and cerium oxide (TaO or Ta 2 O 5 ). Or an organic material such as an acrylic resin or a resist material. Further, examples of the method for forming the film include a dry process such as a chemical vapor deposition (CVD) method or a vacuum vapor deposition method, and a wet process such as a spin coating method. Further, it may be patterned by photolithography or the like as needed.

再者,於在基板151上形成主動矩陣驅動元件160之情形時,有於其表面形成凸凹,因該凸凹而導致發光裝置157產生例如像素電極之缺損、有機EL層之缺損、對向電極之 斷線、像素電極與對向電極之短路、耐壓之降低等之虞。為了防止該等現象,亦可進而於層間絕緣膜159上設置平坦化膜。 Further, when the active matrix driving element 160 is formed on the substrate 151, a convexo-concave is formed on the surface thereof, and the light-emitting device 157 is caused to have defects such as a pixel electrode, a defect of the organic EL layer, and a counter electrode. Broken wire, short circuit of the pixel electrode and the counter electrode, reduction in withstand voltage, and the like. In order to prevent such a phenomenon, a planarizing film may be further provided on the interlayer insulating film 159.

上述平坦化膜可使用公知之材料而形成,例如可列舉:氧化矽、氮化矽、氧化鉭等無機材料,聚醯亞胺、丙烯酸樹脂、抗蝕劑材料等有機材料等。作為平坦化膜之形成方法,可列舉:CVD法、真空蒸鍍法等乾式製程,旋轉塗佈法等濕式製程,但本實施形態並不限定於該等材料及形成方法。又,平坦化膜可為單層構造,亦可為多層構造。 The planarizing film can be formed using a known material, and examples thereof include inorganic materials such as cerium oxide, cerium nitride, and cerium oxide, and organic materials such as polyimine, acrylic resin, and resist material. Examples of the method for forming the planarizing film include a dry process such as a CVD method and a vacuum vapor deposition method, and a wet process such as a spin coating method. However, the present embodiment is not limited to these materials and a forming method. Further, the planarizing film may have a single layer structure or a multilayer structure.

又,於上述有機EL顯示裝置(顯示裝置)150上,亦可進而組合彩色濾光片、色轉換膜等。於與彩色濾光片組合之情形時,通常將發光色設為白色。又,於與色轉換膜組合之情形時,通常將發光色設為藍色。 Further, a color filter, a color conversion film, or the like may be further combined on the organic EL display device (display device) 150. In the case of combination with a color filter, the luminescent color is usually set to white. Further, in the case of combining with a color conversion film, the luminescent color is usually set to blue.

(顯示裝置:第二十三實施形態) (Display device: Twenty-third embodiment)

圖26係表示第二十三實施形態之顯示裝置之概略剖面圖。 Figure 26 is a schematic cross-sectional view showing a display device of a twenty-third embodiment.

有機EL顯示裝置(顯示裝置)170具有具備透光性或非透光性基板171、第一電極(下部電極)172、第二電極(上部電極)173、有機發光層174、及光反射性障壁(絕緣層)175的發光裝置182。有機發光層174形成於該第一電極172及第二電極173之間。障壁(絕緣層)175將第一電極172劃分成複數個特定區域。 The organic EL display device (display device) 170 includes a light-transmitting or non-transmissive substrate 171, a first electrode (lower electrode) 172, a second electrode (upper electrode) 173, an organic light-emitting layer 174, and a light-reflective barrier Light-emitting device 182 (insulating layer) 175. The organic light emitting layer 174 is formed between the first electrode 172 and the second electrode 173. A barrier (insulating layer) 175 divides the first electrode 172 into a plurality of specific regions.

進而,使基板171與對向基板(密封基板)177對向。於使基板171與對向基板(密封基板)177對向進行貼合時,亦可 配置密封層176、低折射率層181。於未使用密封層176及低折射率層181之情形時,只要於無發光元件之基板周邊部等使用密封樹脂、接著樹脂等,使基板171與對向基板(密封基板)177對向而進行貼合即可。密封層176包含樹脂等固體層,亦可具有接著性、水分及或氧透過防止性、水分及或氧吸收性等。低折射率層181例如係由折射率低於對向基板(密封基板)177之折射率的材料所形成,只要包含固體層、或氣體層(乾燥空氣層、氮氣層、減壓氣體層、真空層等)即可。 Further, the substrate 171 is opposed to the counter substrate (sealing substrate) 177. When the substrate 171 and the counter substrate (sealing substrate) 177 are bonded to each other, The sealing layer 176 and the low refractive index layer 181 are disposed. When the sealing layer 176 and the low refractive index layer 181 are not used, the substrate 171 and the counter substrate (sealing substrate) 177 are opposed to each other by using a sealing resin, a resin, or the like in the peripheral portion of the substrate without the light-emitting element. Fit it. The sealing layer 176 contains a solid layer such as a resin, and may have adhesiveness, moisture and oxygen permeability prevention property, moisture, or oxygen absorption property. The low refractive index layer 181 is formed, for example, of a material having a refractive index lower than that of the counter substrate (sealing substrate) 177 as long as it contains a solid layer or a gas layer (dry air layer, nitrogen gas layer, reduced pressure gas layer, vacuum) Layer, etc.).

又,於基板171與第一電極(下部電極)172之間形成有作為驅動部之一例之主動矩陣驅動元件(驅動部)180。於基板171上形成有閘極電極180a、閘極氧化膜178。於閘極氧化膜178上形成有活性層180d、源極電極180b、汲極電極180c,進而形成有層間絕緣膜179。於層間絕緣膜179上設有接觸孔,使汲極電極180c與第一電極172電性接合。主動矩陣驅動元件180包含閘極電極180a、閘極氧化膜178、源極電極180b、汲極電極180c及活性層160d等。 Further, an active matrix driving element (driving portion) 180 as an example of a driving portion is formed between the substrate 171 and the first electrode (lower electrode) 172. A gate electrode 180a and a gate oxide film 178 are formed on the substrate 171. An active layer 180d, a source electrode 180b, and a drain electrode 180c are formed on the gate oxide film 178, and an interlayer insulating film 179 is further formed. A contact hole is formed in the interlayer insulating film 179 to electrically connect the gate electrode 180c and the first electrode 172. The active matrix driving element 180 includes a gate electrode 180a, a gate oxide film 178, a source electrode 180b, a gate electrode 180c, an active layer 160d, and the like.

(發光裝置:第二十四實施形態) (Light-emitting device: twenty-fourth embodiment)

為了提高第一電極(下部電極)之導電性,亦較佳為於進而具備輔助電極之發光裝置上形成光反射性障壁。 In order to improve the conductivity of the first electrode (lower electrode), it is preferable to form a light-reflective barrier on the light-emitting device further including the auxiliary electrode.

圖27A及圖27B係表示第十五實施形態之發光裝置之概略剖面圖。再者,圖27A係自上方觀察發光裝置時之平面圖。圖27B係圖27A之A-A'線處之剖面圖。 27A and 27B are schematic cross-sectional views showing a light-emitting device of a fifteenth embodiment. In addition, FIG. 27A is a plan view when the light-emitting device is viewed from above. Figure 27B is a cross-sectional view taken along line A-A' of Figure 27A.

該實施形態之發光裝置200係於透光性或非透光性基板 201上形成有輔助配線209。輔助配線209只要配置1根或複數根即可。輔助配線209通常使用Al、Ag等電阻值較低之金屬材料。於配置複數根輔助配線209之情形時,可配置成例如條紋狀、或格子狀。 The light-emitting device 200 of this embodiment is a light-transmitting or non-transmissive substrate An auxiliary wiring 209 is formed on 201. It is only necessary to arrange one or a plurality of auxiliary wirings 209. The auxiliary wiring 209 is usually made of a metal material having a low resistance value such as Al or Ag. In the case where the plurality of auxiliary wirings 209 are disposed, they may be arranged, for example, in a stripe shape or a lattice shape.

輔助配線209由第一電極(下部電極)202覆蓋。第一電極(下部電極)202係使用例如金屬電極材料,膜厚例如為100 nm~300 nm左右。為了將第一電極202形成為特定形狀,可採用使用光微影法等進行圖案化之方法、或遮罩蒸鍍等。 The auxiliary wiring 209 is covered by the first electrode (lower electrode) 202. The first electrode (lower electrode) 202 is made of, for example, a metal electrode material, and has a film thickness of, for example, about 100 nm to 300 nm. In order to form the first electrode 202 into a specific shape, a method of patterning by photolithography or the like, or mask vapor deposition or the like may be employed.

於鄰接之第一電極(下部電極)202彼此之間形成有光反射性障壁205。即便障壁205僅覆蓋第一電極(下部電極)202之周圍之一部分,亦可獲得光提取效率提高之效果,較佳為將周圍全部包圍,其對於光提取效率提高而言效果最高。再者,於圖27A中,光反射性障壁205之開口區域係描繪為正方形之形狀,亦可為長方形、圓形、其他形狀。作為障壁205之開口尺寸,並無限定,可選擇開口直徑0.5 mm、1 mm、5 mm、10 mm、50 mm、100 mm等各種尺寸。 A light reflective barrier 205 is formed between the adjacent first electrodes (lower electrodes) 202. Even if the barrier 205 covers only a portion of the periphery of the first electrode (lower electrode) 202, the effect of improving the light extraction efficiency can be obtained, and it is preferable to surround the entire periphery, which is most effective for improving the light extraction efficiency. Further, in FIG. 27A, the opening area of the light-reflective barrier 205 is depicted as a square shape, and may be a rectangle, a circle, or the like. The size of the opening of the barrier 205 is not limited, and various sizes such as an opening diameter of 0.5 mm, 1 mm, 5 mm, 10 mm, 50 mm, and 100 mm can be selected.

於第一電極(下部電極)202上形成有有機發光層204。有機發光層204可使用例如電洞注入層、電洞傳輸層、發光層、電洞阻擋層、電子傳輸層、及電子注入層之積層膜等。於有機發光層204上形成有第二電極(上部電極)203。第二電極(上部電極)203只要使用ITO、IZO等透明電極材料即可。 An organic light emitting layer 204 is formed on the first electrode (lower electrode) 202. As the organic light-emitting layer 204, for example, a hole injection layer, a hole transport layer, a light-emitting layer, a hole barrier layer, an electron transport layer, a laminated film of an electron injection layer, or the like can be used. A second electrode (upper electrode) 203 is formed on the organic light emitting layer 204. The second electrode (upper electrode) 203 may be a transparent electrode material such as ITO or IZO.

進而,於圖27A及圖27B中未圖示,為了保護發光裝置200免受由大氣中之水分或氧引起之腐蝕、變質,較佳為使用對向基板等進行密封。 Further, although not shown in FIGS. 27A and 27B, in order to protect the light-emitting device 200 from corrosion or deterioration caused by moisture or oxygen in the atmosphere, it is preferable to use a counter substrate or the like.

再者,於因障壁205之形狀成為倒錐形狀等而有可能使第二電極(上部電極)203產生段割之情形時,如圖28A及圖28B所示,較佳為於障壁205上形成無段差之部分。 Further, when the shape of the barrier 205 is reversed or the like, and the second electrode (upper electrode) 203 may be cut, as shown in FIGS. 28A and 28B, it is preferable to form the barrier 205. No part of the step.

(發光裝置之應用例) (Application example of light-emitting device)

作為發光裝置之應用例,可列舉:圖29A所示之行動電話機、圖29B所示之有機EL電視等。 Examples of the application of the light-emitting device include a cellular phone shown in FIG. 29A and an organic EL television shown in FIG. 29B.

圖29A所示之行動電話機1000具備本體1001、顯示部1002、聲音輸入部1003、聲音輸出部1004、天線1005、及操作開關1006等,於顯示部1002使用上述各實施形態之發光裝置。又,將用以控制該發光裝置之驅動部內藏。 The mobile phone 1000 shown in FIG. 29A includes a main body 1001, a display unit 1002, an audio input unit 1003, an audio output unit 1004, an antenna 1005, an operation switch 1006, and the like. The display unit 1002 uses the light-emitting devices of the above-described embodiments. Further, a driving unit for controlling the light-emitting device is incorporated.

圖29B所示之電視受信裝置1100具備本體機殼1101、顯示部1102、揚聲器1103、及支架1104等,於顯示部1102使用上述各實施形態之發光裝置。又,將用以控制該發光裝置之驅動部內藏。 The television receiver 1100 shown in FIG. 29B includes a main body casing 1101, a display unit 1102, a speaker 1103, and a holder 1104. The display unit 1102 uses the light-emitting devices of the above-described embodiments. Further, a driving unit for controlling the light-emitting device is incorporated.

於該等行動電話機或有機EL電視中,由於使用上述各實施形態之發光裝置,故而亮度較高、顯示品質優異。 In such a mobile phone or an organic EL television, since the light-emitting device of each of the above embodiments is used, the brightness is high and the display quality is excellent.

又,作為發光裝置之應用例,例如可應用於圖30A所示之吸頂燈(照明裝置)中。圖30A所示之吸頂燈1400具備照明部1401、吊具1402、及電源線1403等。並且,作為照明部1401,可較佳地應用上述各實施形態之發光裝置。又,將用以控制該發光裝置之驅動部內藏。 Further, as an application example of the light-emitting device, for example, it can be applied to a ceiling lamp (illuminating device) shown in Fig. 30A. The ceiling lamp 1400 shown in FIG. 30A includes an illumination unit 1401, a spreader 1402, a power supply line 1403, and the like. Further, as the illumination unit 1401, the light-emitting device of each of the above embodiments can be preferably applied. Further, a driving unit for controlling the light-emitting device is incorporated.

藉由將本發明之一實施形態之發光裝置應用於吸頂燈1400之照明部1401,可以較少之消耗電力而獲得明亮且色調自然之照明光,可實現顯色性較高之照明器具。又,亦可實現可發出照度均勻且色純度較高之面發光的照明器具。 By applying the light-emitting device according to the embodiment of the present invention to the illumination unit 1401 of the ceiling lamp 1400, it is possible to obtain a bright and natural-looking illumination light with less power consumption, and it is possible to realize a lighting fixture having high color rendering properties. Further, it is also possible to realize a lighting fixture that emits a surface that emits light with uniform illumination and high color purity.

又,作為發光裝置之應用例,例如可應用於圖30B所示之照明用支架上。圖30B所示之照明用支架1500具備照明部1501、支架1502、電源開關1503、及電源線1504等。並且,作為照明部1501,可較佳地應用上述各實施形態之發光裝置。又,將用以控制該發光裝置之驅動部內藏。 Further, as an application example of the light-emitting device, for example, it can be applied to the illumination holder shown in Fig. 30B. The illumination holder 1500 shown in FIG. 30B includes an illumination unit 1501, a holder 1502, a power switch 1503, a power supply line 1504, and the like. Further, as the illumination unit 1501, the light-emitting device of each of the above embodiments can be preferably applied. Further, a driving unit for controlling the light-emitting device is incorporated.

藉由將本發明之一實施形態之發光裝置應用於照明用支架1500之照明部1501,可以較少之消耗電力獲得明亮且色調自然之照明光,可實現顯色性較高之照明器具。又,亦可實現可發出照度均勻且色純度較高之面發光的照明器具。 By applying the light-emitting device according to the embodiment of the present invention to the illumination unit 1501 of the illumination holder 1500, it is possible to obtain illumination light having a bright and natural color with less power consumption, and it is possible to realize a lighting fixture having high color rendering properties. Further, it is also possible to realize a lighting fixture that emits a surface that emits light with uniform illumination and high color purity.

[產業上之可利用性] [Industrial availability]

本發明之態樣可應用於發光元件,更具體而言,可應用於顯示裝置、顯示系統、照明裝置、照明系統等。 Aspects of the present invention are applicable to a light-emitting element, and more particularly, to a display device, a display system, a lighting device, a lighting system, and the like.

10‧‧‧發光裝置 10‧‧‧Lighting device

11‧‧‧基板 11‧‧‧Substrate

11a‧‧‧基板11之一面 11a‧‧‧One side of the substrate 11

12‧‧‧第一電極(下部電極) 12‧‧‧First electrode (lower electrode)

13‧‧‧第二電極(上部電極) 13‧‧‧Second electrode (upper electrode)

14‧‧‧有機發光層 14‧‧‧Organic light-emitting layer

15‧‧‧障壁 15 ‧ ‧ barrier

F1‧‧‧沿朝向透明之第二電極(上部電極)13之方向射出之光 F1‧‧‧light emitted in the direction of the transparent second electrode (upper electrode) 13

F2‧‧‧沿朝向非透光性第一電極(下部電極)12之方向射出之光 F2‧‧‧light emitted in the direction toward the non-transmissive first electrode (lower electrode) 12

F3‧‧‧沿面擴展方向(與積層方向垂直之方向)射出之光 F3‧‧‧Light emitted in the direction of the surface expansion (the direction perpendicular to the direction of the laminate)

圖1係表示本發明之第一實施形態之發光裝置之剖面圖。 Fig. 1 is a cross-sectional view showing a light-emitting device according to a first embodiment of the present invention.

圖2係表示本發明之第二實施形態之發光裝置之剖面圖。 Fig. 2 is a cross-sectional view showing a light-emitting device according to a second embodiment of the present invention.

圖3係表示本發明之第三實施形態之發光裝置之剖面 圖。 Figure 3 is a cross-sectional view showing a light-emitting device according to a third embodiment of the present invention; Figure.

圖4係表示本發明之第四實施形態之發光裝置之剖面圖。 Fig. 4 is a cross-sectional view showing a light-emitting device according to a fourth embodiment of the present invention.

圖5係表示本發明之第五實施形態之發光裝置之剖面圖。 Fig. 5 is a cross-sectional view showing a light-emitting device according to a fifth embodiment of the present invention.

圖6係表示本發明之第六實施形態之發光裝置之剖面圖。 Fig. 6 is a cross-sectional view showing a light-emitting device according to a sixth embodiment of the present invention.

圖7係表示本發明之第七實施形態之發光裝置之剖面圖。 Fig. 7 is a cross-sectional view showing a light-emitting device according to a seventh embodiment of the present invention.

圖8係表示本發明之第八實施形態之發光裝置之剖面圖。 Figure 8 is a cross-sectional view showing a light-emitting device according to an eighth embodiment of the present invention.

圖9係表示本發明之第九實施形態之發光裝置之剖面圖。 Fig. 9 is a cross-sectional view showing a light-emitting device according to a ninth embodiment of the present invention.

圖10係表示本發明之第十實施形態之發光裝置之剖面圖。 Figure 10 is a cross-sectional view showing a light-emitting device according to a tenth embodiment of the present invention.

圖11係表示本發明之第十一實施形態之發光裝置之剖面圖。 Figure 11 is a cross-sectional view showing a light-emitting device according to an eleventh embodiment of the present invention.

圖12係表示本發明之第十二實施形態之發光裝置之剖面圖。 Figure 12 is a cross-sectional view showing a light-emitting device according to a twelfth embodiment of the present invention.

圖13A係表示本發明之第十三實施形態之發光裝置之剖面圖。 Figure 13 is a cross-sectional view showing a light-emitting device according to a thirteenth embodiment of the present invention.

圖13B係表示本發明之第十三實施形態之發光裝置之剖面圖。 Figure 13B is a cross-sectional view showing a light-emitting device according to a thirteenth embodiment of the present invention.

圖13C係表示本發明之第十三實施形態之發光裝置之剖 面圖。 Figure 13C is a cross-sectional view showing a light-emitting device according to a thirteenth embodiment of the present invention; Surface map.

圖13D係表示本發明之第十三實施形態之發光裝置之剖面圖。 Figure 13D is a cross-sectional view showing a light-emitting device according to a thirteenth embodiment of the present invention.

圖14係表示本發明之第十四實施形態之發光裝置之剖面圖。 Figure 14 is a cross-sectional view showing a light-emitting device according to a fourteenth embodiment of the present invention.

圖15係表示本發明之第十五實施形態之發光裝置之剖面圖。 Figure 15 is a cross-sectional view showing a light-emitting device according to a fifteenth embodiment of the present invention.

圖16係表示本發明之第十六實施形態之發光裝置之剖面圖。 Figure 16 is a cross-sectional view showing a light-emitting device according to a sixteenth embodiment of the present invention.

圖17係表示本發明之第十七實施形態之發光裝置之剖面圖。 Figure 17 is a cross-sectional view showing a light-emitting device according to a seventeenth embodiment of the present invention.

圖18係表示本發明之第十八實施形態之顯示裝置之剖面圖。 Figure 18 is a cross-sectional view showing a display device according to an eighteenth embodiment of the present invention.

圖19係表示本發明之第十九實施形態之顯示裝置之剖面圖。 Figure 19 is a cross-sectional view showing a display device according to a nineteenth embodiment of the present invention.

圖20A係表示本發明之第二十實施形態之顯示裝置之剖面圖。 Figure 20A is a cross-sectional view showing a display device according to a twentieth embodiment of the present invention.

圖20B係表示本發明之第二十實施形態之顯示裝置之剖面圖。 Figure 20B is a cross-sectional view showing a display device according to a twentieth embodiment of the present invention.

圖21係表示本發明之第二十一實施形態之顯示裝置之剖面圖。 Figure 21 is a cross-sectional view showing a display device according to a twenty-first embodiment of the present invention.

圖22A係表示障壁之剖面形狀例之剖面圖。 Fig. 22A is a cross-sectional view showing an example of a sectional shape of a barrier rib.

圖22B係表示障壁之剖面形狀例之剖面圖。 Fig. 22B is a cross-sectional view showing an example of a sectional shape of a barrier rib.

圖22C係表示障壁之剖面形狀例之剖面圖。 Fig. 22C is a cross-sectional view showing an example of a sectional shape of a barrier rib.

圖22D係表示障壁之剖面形狀例之剖面圖。 Fig. 22D is a cross-sectional view showing an example of a sectional shape of a barrier rib.

圖22E係表示障壁之剖面形狀例之剖面圖。 Fig. 22E is a cross-sectional view showing an example of a sectional shape of a barrier rib.

圖23A係表示障壁之形狀例之剖面圖。 Fig. 23A is a cross-sectional view showing an example of a shape of a barrier rib.

圖23B係表示障壁之形狀例之剖面圖。 Fig. 23B is a cross-sectional view showing an example of the shape of the barrier rib.

圖23C係表示障壁之形狀例之剖面圖。 Fig. 23C is a cross-sectional view showing an example of the shape of the barrier rib.

圖23D係表示障壁之形狀例之剖面圖。 Fig. 23D is a cross-sectional view showing an example of the shape of the barrier rib.

圖23E係表示障壁之形狀例之剖面圖。 Fig. 23E is a cross-sectional view showing an example of the shape of the barrier rib.

圖23F係表示障壁之形狀例之剖面圖。 Fig. 23F is a cross-sectional view showing an example of the shape of the barrier rib.

圖23G係表示障壁之形狀例之剖面圖。 Fig. 23G is a cross-sectional view showing an example of the shape of the barrier rib.

圖23H係表示障壁之形狀例之剖面圖。 Fig. 23H is a cross-sectional view showing an example of the shape of the barrier rib.

圖23I係表示障壁之形狀例之剖面圖。 Fig. 23I is a cross-sectional view showing an example of the shape of a barrier rib.

圖24A係表示障壁之構成例之剖面圖。 Fig. 24A is a cross-sectional view showing a configuration example of a barrier rib.

圖24B係表示障壁之構成例之剖面圖。 Fig. 24B is a cross-sectional view showing a configuration example of a barrier rib.

圖24C係表示障壁之構成例之剖面圖。 Fig. 24C is a cross-sectional view showing a configuration example of a barrier rib.

圖24D係表示障壁之構成例之剖面圖。 Fig. 24D is a cross-sectional view showing a configuration example of a barrier rib.

圖24E係表示障壁之構成例之剖面圖。 Fig. 24E is a cross-sectional view showing a configuration example of a barrier rib.

圖24F係表示障壁之構成例之剖面圖。 Fig. 24F is a cross-sectional view showing a configuration example of a barrier rib.

圖25係表示本發明之第二十二實施形態之顯示裝置之剖面圖。 Figure 25 is a cross-sectional view showing a display device according to a twenty-second embodiment of the present invention.

圖26係表示本發明之第二十三實施形態之顯示裝置之剖面圖。 Figure 26 is a cross-sectional view showing a display device according to a twenty-third embodiment of the present invention.

圖27A係表示本發明之第二十四實施形態之發光裝置之剖面圖。 Figure 27 is a cross-sectional view showing a light-emitting device according to a twenty-fourth embodiment of the present invention.

圖27B係表示本發明之第二十四實施形態之發光裝置之 剖面圖。 Figure 27B is a view showing a light-emitting device according to a twenty-fourth embodiment of the present invention; Sectional view.

圖28A係表示第二十四實施形態之變形例之剖面圖。 Fig. 28A is a cross-sectional view showing a modification of the twenty-fourth embodiment.

圖28B係表示第二十四實施形態之變形例之剖面圖。 Fig. 28B is a cross-sectional view showing a modification of the twenty-fourth embodiment.

圖29A係表示作為本發明之發光裝置之一應用例的顯示裝置之外觀圖。 Fig. 29A is a perspective view showing a display device as an application example of the light-emitting device of the present invention.

圖29B係表示作為本發明之發光裝置之一應用例的顯示裝置之外觀圖。 Fig. 29B is an external view showing a display device which is an application example of the light-emitting device of the present invention.

圖30A係表示作為本發明之發光裝置之一應用例的照明裝置之外觀圖。 Fig. 30A is an external view showing a lighting device as an application example of the light-emitting device of the present invention.

圖30B係表示作為本發明之發光裝置之一應用例的照明裝置之外觀圖。 Fig. 30B is an external view showing a lighting device which is an application example of the light-emitting device of the present invention.

10‧‧‧發光裝置 10‧‧‧Lighting device

11‧‧‧基板 11‧‧‧Substrate

11a‧‧‧基板11之一面 11a‧‧‧One side of the substrate 11

12‧‧‧第一電極(下部電極) 12‧‧‧First electrode (lower electrode)

13‧‧‧第二電極(上部電極) 13‧‧‧Second electrode (upper electrode)

14‧‧‧有機發光層 14‧‧‧Organic light-emitting layer

15‧‧‧障壁 15 ‧ ‧ barrier

F1‧‧‧沿朝向透明之第二電極(上部電極)13之方向射出之光 F1‧‧‧light emitted in the direction of the transparent second electrode (upper electrode) 13

F2‧‧‧沿朝向非透光性第一電極(下部電極)12之方向射出之光 F2‧‧‧light emitted in the direction toward the non-transmissive first electrode (lower electrode) 12

F3‧‧‧沿面擴展方向(與積層方向垂直之方向)射出之光 F3‧‧‧Light emitted in the direction of the surface expansion (the direction perpendicular to the direction of the laminate)

Claims (24)

一種發光裝置,其具備第一基板、依序積層於上述第一基板之一面上之第一電極及包含透光性導電材之第二電極、形成於上述第一電極及上述第二電極之間的有機發光層、及將至少上述第一電極劃分成特定區域之第一障壁,且上述第一障壁包含具有光反射性之材料,上述有機發光層所發出之光經由上述第二電極而射出至外部。 A light-emitting device comprising: a first substrate; a first electrode sequentially laminated on one surface of the first substrate; and a second electrode including a transparent conductive material, formed between the first electrode and the second electrode The organic light-emitting layer and the first barrier wall dividing the at least the first electrode into a specific region, and the first barrier layer includes a material having light reflectivity, and the light emitted by the organic light-emitting layer is emitted to the second electrode through the second electrode external. 如請求項1之發光裝置,其中上述第一電極具有遮光性。 The light-emitting device of claim 1, wherein the first electrode has a light-shielding property. 如請求項1之發光裝置,其中上述第一電極包含光反射性導電材料。 The illuminating device of claim 1, wherein the first electrode comprises a light reflective conductive material. 如請求項3之發光裝置,其進而具有覆蓋上述第二電極及上述障壁之絕緣膜。 The light-emitting device of claim 3, further comprising an insulating film covering the second electrode and the barrier rib. 如請求項3之發光裝置,其進而具有設置於上述第二電極上之第二基板。 The illuminating device of claim 3, further comprising a second substrate disposed on the second electrode. 如請求項5之發光裝置,其進而包含設置於上述第二基板與上述第二電極之間、且折射率低於上述第二基板的低折射率層。 The light-emitting device of claim 5, further comprising a low refractive index layer disposed between the second substrate and the second electrode and having a lower refractive index than the second substrate. 如請求項6之發光裝置,其中上述低折射率層為氣體。 The light-emitting device of claim 6, wherein the low refractive index layer is a gas. 如請求項6或7之發光裝置,其進而於上述第一基板與上述第二基板之間具有水分吸收構件。 The light-emitting device of claim 6 or 7, further comprising a moisture absorbing member between the first substrate and the second substrate. 如請求項5至7中任一項之發光裝置,其進而包含設置於上述第二基板上、且與上述障壁相對的光反射性對向障壁。 The light-emitting device according to any one of claims 5 to 7, further comprising a light-reflective opposing barrier provided on the second substrate and facing the barrier. 如請求項1之發光裝置,其進而包含配置於上述第一基板與上述第一電極之間的反射層、及配置於上述第一電極與上述反射層之間的中間層,且上述第一電極包含透光性導電材料,上述中間層包含透光性材料。 The light-emitting device of claim 1, further comprising: a reflective layer disposed between the first substrate and the first electrode; and an intermediate layer disposed between the first electrode and the reflective layer, and the first electrode The light transmissive conductive material is included, and the intermediate layer includes a light transmissive material. 如請求項10之發光裝置,其中上述中間層包含電性連接上述第一電極與上述反射層之連接區域。 The illuminating device of claim 10, wherein the intermediate layer comprises a connection region electrically connected to the first electrode and the reflective layer. 如請求項11之發光裝置,其進而具有與上述第一基板對向設置之第二基板、配置於上述第一基板與上述第二基板之間且折射率低於上述第二基板的低折射率層、及配置於上述第一基板與上述第二基板之間的水分吸收構件。 The illuminating device of claim 11, further comprising a second substrate disposed opposite the first substrate, a low refractive index disposed between the first substrate and the second substrate, and having a lower refractive index than the second substrate a layer and a moisture absorbing member disposed between the first substrate and the second substrate. 如請求項1之發光裝置,其進而具有配置於上述第一基板與上述第一電極之間的中間層,且上述第一基板包含光反射性材料,上述第一電極包含透光性導電材料,上述中間層包含透光性材料。 The light-emitting device of claim 1, further comprising an intermediate layer disposed between the first substrate and the first electrode, wherein the first substrate comprises a light-reflective material, and the first electrode comprises a light-transmitting conductive material, The intermediate layer contains a light transmissive material. 如請求項10至12中任一項之發光裝置,其中上述障壁與上述反射層係其一部分相互接觸。 The illuminating device according to any one of claims 10 to 12, wherein the barrier rib and the reflective layer are in contact with each other. 如請求項1至7及10至13中任一項之發光裝置,其中將上 述有機層之發光區域之中心位置與上述第一電極之間的間隔設定為200 nm以上。 The illuminating device of any one of claims 1 to 7 and 10 to 13, wherein The interval between the center position of the light-emitting region of the organic layer and the first electrode is set to 200 nm or more. 如請求項1至7及10至13中任一項之發光裝置,其中上述障壁所含之上述材料係進而具有光擴散性之材料。 The light-emitting device according to any one of claims 1 to 7 and 10 to 13, wherein the material contained in the barrier rib is further a material having light diffusibility. 如請求項1至7及10至13中任一項之發光裝置,其中上述障壁所含之上述材料為白色。 The illuminating device according to any one of claims 1 to 7 and 10 to 13, wherein said material contained in said barrier rib is white. 如請求項1至7及10至13中任一項之發光裝置,其中上述障壁所含之上述材料包含樹脂、及分散於上述樹脂中之微細之粒子。 The light-emitting device according to any one of claims 1 to 7 and 10 to 13, wherein the material contained in the barrier rib comprises a resin and fine particles dispersed in the resin. 如請求項18之發光裝置,其中上述粒子之粒徑為200 nm以上且5 μm以下。 The light-emitting device of claim 18, wherein the particle diameter of the particles is 200 nm or more and 5 μm or less. 如請求項1至7及10至13中任一項之發光裝置,其中上述第一障壁包含第二障壁、第三障壁、及光反射膜,上述第二障壁形成於上述第一基板上,上述光反射膜覆蓋上述第二障壁,上述第三障壁覆蓋上述光反射膜,上述第三障壁包含具有透光性之材料。 The illuminating device of any one of claims 1 to 7 and 10 to 13, wherein the first barrier rib includes a second barrier rib, a third barrier rib, and a light reflecting film, wherein the second barrier rib is formed on the first substrate, The light reflecting film covers the second barrier, the third barrier covers the light reflecting film, and the third barrier comprises a light transmissive material. 如請求項20項之發光裝置,其中上述第二障壁為黑色。 The illuminating device of claim 20, wherein the second barrier is black. 如請求項20項之發光裝置,其中上述第三障壁所含之上述材料進而具有光散射性。 The illuminating device of claim 20, wherein the material contained in the third barrier wall further has light scattering properties. 一種照明裝置,其具備如請求項1至7及10至13中任一項之發光裝置、及控制上述發光裝置之驅動部。 A lighting device comprising the light-emitting device according to any one of claims 1 to 7 and 10 to 13, and a driving unit that controls the light-emitting device. 一種顯示裝置,其具備如請求項1至7及10至13中任一項之發光裝置、及控制上述發光裝置之驅動部。 A display device comprising the light-emitting device according to any one of claims 1 to 7 and 10 to 13, and a drive unit for controlling the light-emitting device.
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