TW201318037A - Substrate processing apparatus, and process of forming amorphous carbon layer and method of gap filling in a semiconductor device using thereof - Google Patents

Abstract

A substrate processing apparatus includes a chamber having an internal space, a substrate supporting part disposed inside the chamber, and supporting a substrate, a showerhead that is grounded and is disposed opposite to the substrate supporting part spraying material towards the substrate and a connection member that has one end connected with an inner side of the chamber and other end connected with the showerhead to extend a grounded area of the inner chamber by electrically connecting the inner side of the chamber and the showerhead. Therefore, the connection member that has one end connected with an inner side of the chamber and other end connected with the shower, is installed to extend a grounded area compared with the conventional. Therefore, as a DC self bias that is provided to the substrate supporting part increases, an ion energy that head towards the substrate increase. Which increases an ion acceleration that head towards the substrate and an ion energy that collides with the substrate, increasing layer density and etching endurance of the thin layer that is formed on the substrate.

Description

Substrate processing apparatus, method of forming an amorphous carbon film, and method of filling a gap in a semiconductor element using the method/device

The present invention relates to a substrate processing apparatus, and a process for forming an amorphous carbon layer using the apparatus, and a method of filling a gap in a semiconductor element using the apparatus. More specifically, the present invention relates to a substrate processing apparatus using plasma, a process of forming an amorphous carbon layer using the substrate processing apparatus, and a method of filling a gap in a semiconductor element using the substrate processing apparatus.

A conventional substrate processing apparatus for discharging a plasma to perform deposition includes: a chamber; a substrate supporting portion disposed inside the chamber and supporting the substrate; and a showerhead disposed opposite to the upper side of the substrate supporting portion and facing a substrate ejecting material; and a ceramic liner disposed between the inner side of the chamber and the showerhead to electrically insulate the chamber from the showerhead. According to FIG. 1, a conventional substrate supporting device 10 includes a chamber 100, a substrate supporting portion 210 that supports a substrate S loaded inside the chamber 100, and a showerhead 300 that is in contact with one of the substrate supporting portions 210 inside the chamber 100. The side faces are opposed to eject the material toward the substrate S, wherein the head 300 is connected to the material supply unit 110 that supplies the material and the RF power supply unit 600 that supplies the RF power. Further, the substrate supporting portion 210 is grounded.

Meanwhile, since semiconductor elements become more compact and highly integrated, a hard mask using an amorphous carbon layer is required to have high etching durability to form a fine pattern.

However, if the amorphous carbon layer is formed by a conventional substrate processing apparatus as described above, ions may not be trapped when ions are exposed on the surface of the substrate. Accelerate so that low energy ions collide with the surface of the substrate. Therefore, this is a factor that reduces the accuracy of the fine pattern because an excellent amorphous carbon layer is not formed. In addition, when processing a method of filling a gap by using a conventional substrate processing apparatus as described above, as shown in FIG. 2, when ions having no directivity inside the plasma are deposited on the fine pattern, Ions do not have directivity, so ions accumulate like snow. This causes an overhang effect in the upper side of the gap pattern in the formation process of the amorphous carbon layer, which blocks the entrance of the gap pattern formed on the substrate, so that the internal gap is not completely filled and It is easy to create voids.

[Prior technology]

Korean Patent Publication No. 10-1998-085787

Japanese Patent Publication No. 2009-27021

[Object of the present invention]

Accordingly, it is an object of the present invention to solve the problem by providing a substrate processing apparatus having an extended connecting member.

Further, another object of the present invention is to solve the problem by providing a process for forming an amorphous carbon layer which can improve etching durability.

Further, another object of the present invention is to solve the problem by providing a filling gap which can prevent the occurrence of voids.

A substrate processing apparatus according to an exemplary embodiment of the present invention includes: a chamber having an internal space; and a substrate supporting portion disposed in the chamber Internally and mounting a substrate; a showerhead grounded and disposed opposite the substrate supporting portion to eject material toward the substrate; and a connecting member having an end electrically connected to the chamber and the other end and the showerhead Electrically connected to extend the grounded area.

The connecting member may have a ring shape.

A side of the head opposite the substrate supporting portion may be in the same horizontal plane as one side of the connecting member.

A gasket may be installed between the showerhead and the connecting member, and the connecting member may be mounted to surround at least one of the showerhead and an outer circumference of the gasket.

The substrate supporting portion may be electrically connected to a power supply unit that supplies RF power.

A substrate processing apparatus according to another exemplary embodiment of the present invention includes: a chamber having an internal space and being grounded; a substrate supporting portion that mounts the substrate and is disposed inside the chamber; a shower head that is grounded and described The substrate supporting portion is disposed opposite to eject the material toward the substrate; an RF power supply unit that supplies RF power to the substrate supporting portion; and a DC power supply unit that supplies DC power to the substrate supporting portion.

The DC supply unit can provide pulsed DC power.

The apparatus may further include a filter that protects the DC power supply unit from the RF power of the RF power supply unit.

Forming amorphous carbon on a substrate according to an exemplary embodiment of the present invention The process includes: supplying RF power and DC power to a substrate supporting portion on which the substrate is mounted; grounding a head of the material gas toward the substrate; and spraying a material gas onto the substrate by using the head.

The substrate support portion can be supplied with a DC power voltage from about -100 volts to about -800 volts.

The provided DC power can be pulsed.

The process may further comprise treating the surface of the amorphous carbon layer with a plasma.

The second RF power that may be supplied in the process of treating the surface of the amorphous carbon layer with plasma may be lower than the RF power in the process of forming amorphous carbon.

The purification process can be performed in the process of treating the surface of the amorphous carbon layer with plasma.

A method of filling a gap according to an exemplary embodiment of the present invention includes: loading a substrate having a gap pattern formed thereon on a substrate supporting portion; ejecting a process gas toward the substrate; and forming a chamber by grounding the chamber and the shower head An amorphous carbon layer is filled into the gap pattern on the substrate, and DC power having a negative potential and RF power generating plasma are supplied to the substrate supporting portion.

A pulsed DC power supply can be provided in the process of forming an amorphous carbon layer on the substrate.

The RF power can range from about 200 watts to about 1500 watts.

The process gas may comprise acetylene (C ₂ H ₂ ), helium (He), and argon (Ar).

The process gas may comprise at least one of the following gases: acetylene (C ₂ H ₂ ), propylene (C ₃ H ₆ ), and oxygen (O ₂ ).

And the method may further include a filter electrically connected to the substrate supporting portion to protect the DC power supply unit from the RF power.

The substrate processing apparatus of the present invention increases the layer density and etching durability of the layer formed on the substrate. In addition, a uniform plasma can be formed on a larger area than in a conventional area. Therefore, the substrate processing apparatus of the present invention has an advantage in that the uniformity of the substrate processing apparatus is increased. Further, the grounding region of the conventional device having the gasket can be extended by a method of additionally mounting the connecting member according to the embodiment of the present invention.

The process of forming an amorphous carbon layer of the present invention increases the ion energy moving toward the substrate. In addition, this process produces an amorphous carbon layer having improved etching durability as compared with conventional films. When an amorphous carbon layer is used as the hard mask, the amorphous carbon layer can easily produce a fine pattern and increase the accuracy of this fine pattern.

The method of filling the gap of the present invention can reduce the occurrence of voids caused by the overhanging effect. In addition, if oxygen is contained in the process gas, voids caused by the gap pattern can be further reduced.

The invention is described more fully hereinafter with reference to the accompanying drawings. However, the invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein.

Numerical terms such as "a", "an" and "the" may be used as a reference to the various structural components, however, structural components are not limited by these terms. These terms are only used to distinguish one structural component from another structural component. For example, if the right does not go beyond the scope, the first structural component can be named as the second structural component, and the same applies to the second structural component that can be named as the first structural component.

The terms "comprising," "comprising," etc.,,,,,,,,,,,,,,,,,,,,,,,,,,, Part, combination of components.

The invention is described more fully hereinafter with reference to the accompanying drawings.

Substrate processing device <First Embodiment>

3 is a cross-sectional view showing a substrate processing apparatus having a connecting member mounted in accordance with a first embodiment of the present invention. 4 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head according to the first embodiment of the present invention. Figure 5 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head according to the second embodiment of the present invention. Figure 6 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head in accordance with the third embodiment of the present invention.

Referring to FIG. 3, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 2100 having an internal space, and a substrate supporting unit 2200. The substrate S mounted inside the chamber 2100 is supported; a power supply unit 2420 that supplies RF power to the substrate supporting unit 2200; a head 2300 that is grounded; and a connecting member 2800 that is disposed outside the head 2300, the connecting member One end of the 2800 is electrically connected to the inner side surface of the chamber 2100 and the other end is electrically connected to the shower head 2300 to electrically connect the inner side surface of the chamber 2100 with the shower head 2300. In addition, the substrate processing apparatus may further include a material supply line 2110 and a spacer 2500. Material supply line 2110 provides material gas to showerhead 2300. The gasket 2500 is disposed between the showerhead 2300 and the connecting member 2800 such that the gasket 2500 surrounds the outer circumference of the showerhead 2300.

The chamber 2100 is formed in a cylindrical shape (internal is empty), and there is a small reaction space inside thereof, and the substrate S can be processed in this small reaction space. The chamber 2100 may be formed to have an internal space to handle various shapes of the substrate S. The chamber 2100 of the embodiment has an internal space and includes a chamber body 2101 with an upper side open and a chamber cover 2102 covering an upper side of the chamber body 2101. The inner side of the chamber 2100 is electrically connected to the grounded shower head 2300 by a connecting member 2800 explained later, and serves as a grounding area.

The chamber body 2101 and the chamber cover 2102 of the chamber 2100 may be integrally formed with each other. Alternatively, the chamber body 2101 and the chamber cover 2102 may be separately formed and combined with each other. An exhaust portion that exhausts the inner chamber 2100, a substrate gate portion that allows the substrate S to enter, and a pressure control portion that controls the pressure of the inner chamber, which are not shown in the drawings, may be provided.

The substrate supporting unit 2200 installed inside the chamber 2100 includes: a base A board supporting portion 2210 on which the substrate S is mounted; a shaft 2221 supporting the substrate supporting portion 2210; and a power unit 2222 that raises/lowers or rotates the shaft 2221. The substrate supporting portion 2210 of the embodiment is formed, for example, as a circular plate and may be coated with a dielectric material on the surface, and the heater may be mounted inside the substrate supporting portion 2210. The shape of the substrate supporting portion 2210 will not be limited to a circular shape, and may be formed in various shapes that match the substrate S. The shaft 2221 supports the substrate supporting portion 2210. One end of the shaft 2221 is connected to a lower portion of the substrate supporting portion disposed inside the chamber 2100, and the other end is protruded to be connected to the power unit 2222. The power line 2410 is mounted inside the substrate supporting portion 2210 and the shaft 2221, wherein one end of the power line 2410 is electrically connected to a lower portion of the substrate supporting portion 2210 and the other end is electrically connected to the power supply unit 2420. In the embodiment, stainless steel (SUS) is used as the power line 2410.

The showerhead 2300 is disposed to oppose the upper side of the substrate supporting portion 2210, and has an inner space for receiving material from the material supply line 2110 and a plurality of ejection holes 2211 through which the material is sprayed toward the substrate S. The showerhead 2300 according to an embodiment comprises a metal, for example, stainless steel (SUS) having a circular cross-sectional shape, and the showerhead 2300 is grounded. The material of the shower head 2300 is not limited to stainless steel (SUS) and can be formed by various materials having electrical conductivity, and can be formed in various shapes according to the shape of the substrate S. Also, the showerhead 2300 according to the embodiment as shown in FIG. 3 may have a portion that protrudes toward the outer portion of the chamber 2100. Alternatively, the entire showerhead 2300 can be disposed inside the chamber 2100.

As shown in Figures 3 and 4, the spacer 2500 allows the shower head and the surround nozzle The interior of the chamber of 2300 is insulated and mounted to surround the outer circumference of the showerhead 2300. In other words, the gasket 2500 can have a ring shape and surround the outer circumference of the showerhead 2300. The spacer 2500 according to the embodiment is formed into a ring shape, for example, by using a ceramic material. The spacer 2500 can be formed into various shapes that match the shape of the head 2300 by using an insulating material. Additionally, the vertical length of the liner 2500 can be formed to match the vertical length of the showerhead 2300, and at least one of the liner 2500 and the showerhead 2300 does not protrude downward.

The connecting member 2800 grounds the inner side of the chamber 2100 by electrically connecting the gap between the inner side surface of the chamber 2100 and the head 2300. The connecting member 2800 is disposed outside one of the spacer 2500 and the showerhead 2300. One end of the connecting member 2800 is electrically connected to the inner side of the chamber 2100 and the other end is electrically connected to the showerhead 2300. Accordingly, the connecting member 2800 can have a ring shape with an empty center, and at least one of the pad 2500 and the showerhead 2300 is disposed in an empty center.

For example, as shown in FIGS. 3 and 4, the vertical length of the liner 2500 is formed to match the vertical length of the showerhead 2300 such that the liner 2500 and the lower surface of the showerhead 2300 can lie in the same horizontal plane. The lower surface of the head 2300, in other words, the area in which the injection hole 2211 is located is exposed. The connecting member 2800 is mounted to surround the outer circumference of the shower head 2300, one end of the connecting member 2800 is electrically connected to the inner chamber 2100 and the other end is electrically connected to the lower surface of the shower head 2300. The connecting member 2800 according to the first embodiment of the present invention has, for example, a ring shape having an L-shaped cross section. The shape of the connecting member 2800 can have a vertically extending member that extends in a vertical direction of the pad 2500 to contact the outer surface of the pad 2500. 2810, and a horizontally extending member 2820 that extends along the width of the liner 2500 or the showerhead 2300 to contact a portion of the lower surface of the showerhead 2300. The vertically extending member 2810 is electrically connected to the upper wall surface of the chamber 2100, the vertically extending member 2810 is away from the inner wall surface of the chamber 2100, and the portion of the inner surface of the horizontally extending member 2820 is preferably electrically connected to the lower surface of the showerhead 2300. . The nozzle 2300 is electrically connected to the upper wall surface of the interior of the chamber 2100 by the connecting member 2800, so that the chamber 2100, in detail, the upper wall surface is grounded. Therefore, the ground contact area can be increased as compared with the prior art. The horizontally extending member 2820 electrically connected to the pad 2500 and the lower portion of the showerhead 2300 is formed of a sheet and may not have a region that protrudes toward the lower portion of the head 2300. Referring to FIG. 4, the gap distance h1 between the substrate supporting portion 2210 and the head 2300 and the gap distance h2 between the substrate supporting portion 2210 and the lower surface of the connecting member 2800 should not be different, so that the substrate supporting portion 2210 and the head 2300 The potential between the potential and the inner wall surface of the substrate supporting portion 2210 and the chamber (upper wall surface) 2100 is not different. Therefore, the plasma density generated from the gap between the substrate supporting portion 2210 and the head 2300 and the plasma density generated from the gap between the substrate supporting portion 2210 and the inner wall surface of the chamber (upper wall) 2100 may not be different. .

According to the first embodiment of the invention as shown above in FIGS. 3 and 4, the connecting member 2800 is described as being mounted to surround the outer circumference of the spacer 2500, one end of the connecting member 2800 and the chamber 2100 The inner wall surface is electrically connected and the other end is electrically connected to the pad 2500 and the lower surface of the showerhead 2300. However, the shape and mounting position of the connecting member 2800 can be The shape, mounting location or presence of the pad 2500 is varied in various ways.

<Second embodiment>

For example, according to the second embodiment of the present invention as shown in FIG. 5, the lower surface of the showerhead 2300 is more prominent than the lower surface of the spacer 2500, so that the lower surface of the showerhead 2300 and a portion of the showerhead 2300 can be exposed. In the liner 2500. The connecting member 2800 is mounted to surround the outer circumference of the gasket 2500 and the outer surface of the exposed showerhead 2300. In other words, the vertically extending member 2810 of the connecting member 2800 is electrically connected to the upper wall surface of the interior of the chamber 2100, and the horizontally extending member 2820 is electrically connected to the outer surface of the showerhead 2300. Wherein, the lower surface of the connecting member 2800, in other words, the lower surface of the horizontally extending member 2820 and the lower surface of the showerhead 2300 are mounted to be in the same horizontal plane. Therefore, since the gap distance h1 between the substrate supporting portion 2210 and the head 2300 is the same as the gap distance h2 between the substrate supporting portion 2210 and the lower surface of the connecting member 2800, and the area of the plasma density generated inside the chamber 2100 It is even.

Therefore, by additionally mounting the connecting member 2800 to the apparatus of the first embodiment and the second embodiment of the present invention having the spacer 2500, and electrically connecting the head 2300 to the inner wall surface of the chamber 2100, the opening can be easily expanded. Grounding area.

In addition, since the difference between the gap distance h1 between the substrate supporting portion and the head 2300 and the gap distance h2 between the substrate supporting portion 2210 and the lower surface of the connecting member 2800 can be eliminated, the substrate supporting portion 2210 and the head 2300 are eliminated. The plasma density generated by the gap between the upper and lower The difference between the plasma density generated by the gap between the substrate portion 2210 and the inner wall surface (upper wall surface) of the chamber 2100 can be reduced more than in FIG. 4 according to the first embodiment.

<Third embodiment>

In another example, according to the third embodiment of the present invention as shown in FIG. 6, the spacer 2500 may not be installed. The connecting member 2800 extends in a vertical direction having an inner side surface surrounding the outer surface of the showerhead 2300, and an upper portion thereof is mounted to be coupled to an upper wall surface of the interior of the chamber 2100.

The showerhead 2300 is in electrical contact with the upper wall surface of the interior of the chamber 2100, and additionally electrically connects the connecting member 2800 with the showerhead 2300 and the chamber 2100. In addition, the connecting member 2800 can eliminate the difference between the gap distance h1 between the substrate supporting portion and the head 2300 and the gap distance h2 between the substrate supporting portion and the lower surface of the connecting member 2800, wherein the substrate supporting portion 2210 and the head 2300 The difference between the plasma density generated by the gap and the plasma density generated from the gap between the substrate supporting portion 2210 and the inner wall surface (upper wall surface) of the chamber 2100 can be reduced more.

Meanwhile, a structure such as an o-ring can be inserted between the showerhead 2300 and the chamber 2100, wherein the connecting member 2800 can electrically connect the chamber 2100 with the showerhead 2300 and the chamber 2100 to ground the showerhead 2300.

Further, the connecting members 2800 of the first, second, and third embodiments are mounted to be coupled to the upper wall surface of the interior of the chamber 2100, and are mounted to be away from the inner wall surface of the chamber 2100. However, without being limited thereto, the connecting member 2800 may be mounted to be coupled to the inner side wall surface of the chamber 2100.

Meanwhile, when RF power is supplied to the substrate supporting portion 2210 of the support substrate S and the head 2300 is grounded, the DC self-bias supplied to the substrate supporting portion may increase as the ground contact area increases. It can be described as the following expression, DC self-bias (sprinkler area / substrate support portion area) ² .

If the ground contact area is increased, the sheath potential between the head 2300 and the substrate supporting portion 2210 is increased, so that the DC self-bias provided to the substrate supporting portion 2210 is increased.

In the embodiment of the present invention, by electrically connecting the inner wall surface of the chamber 2100 and the shower head 2300 via the connecting member 2800, the ground contact area is expanded more than in the conventional case. In other words, the inner wall surface of the chamber 2100 and the showerhead 2300 serve as a grounding region, which enlarges the ground contact area inside the chamber 2100. Therefore, using the expression DC self-bias as mentioned above (Nozzle area/substrate support portion area) ² , DC self-bias voltage supplied to the substrate supporting portion 2210 is increased. As a result, the layer density of the sheet (for example, an amorphous carbon layer) formed on the substrate S can be increased.

Further, by electrically connecting the inner wall surface of the chamber 2100 and the shower head 2300 via the connecting member 2800, a more uniform plasma can be produced than a conventional device in which only the spacer 2500 is mounted. In other words, by changing the flow of electrons through the insulating spacer 2500, generation of non-uniform plasma can be prevented. Therefore, the uniformity of the substrate processing process, for example, the uniformity of the amorphous carbon layer deposited on the substrate can be improved.

<Fourth embodiment>

Figure 7 is a cross-sectional view showing a substrate processing apparatus in accordance with a fourth embodiment of the present invention.

In the above description, as in the first, second, and third embodiments of the present invention from FIGS. 3 to 6, the lower portion of the head 2300 is described as protruding toward the lower side of the upper wall surface of the interior of the chamber 2100. However, without being limited to the above description, the lower portion of the head 2300 may not protrude toward the lower side of the upper wall surface of the interior of the chamber 2100, and may be installed to be in the same horizontal plane as the upper wall of the interior of the chamber 2100. Since the shower head 2300 of the fourth embodiment of the present invention does not protrude toward the inner chamber 2100, the thickness of the connecting member 2800 electrically connected to the upper wall surface of the chamber 2100 and the showerhead 2300 can be thinner than the second and third embodiments of the present invention. Example. In this case, the connecting member 2800 of the fourth embodiment of the present invention may be a horizontally extending thin plate.

<Fifth Embodiment>

Figure 8 is a cross-sectional view showing a substrate processing apparatus in accordance with a fifth embodiment of the present invention.

A substrate processing apparatus according to a fifth embodiment of the present invention is a device that forms a thin layer of, for example, an amorphous carbon layer. The substrate processing apparatus includes a chamber 1100 having an internal space, a substrate supporting unit 1200 mounted with a substrate S inside the chamber 1100, and an RF power supply unit 1600 supplying RF power to the substrate supporting unit 1200; DC power supply The unit 1400 supplies DC power to the substrate supporting unit 1200; and a head 1300 that is grounded and disposed opposite the substrate supporting unit 1200 to eject material toward the substrate S. Also, a filter 1500 installed between the RF power supply unit 1600 and the DC power supply unit 1400, and material supply units 1110 and 1120 that supply process gases to the showerhead 1300 are included. Wherein, the RF power supply unit 1600 and the DC power supply unit 1400 are connected in parallel with each other. Placement, and filter 1500 filters the RF power to protect DC power supply unit 1400 from RF power.

The substrate supporting portion 1210 is electrically connected to the RF power supply unit 1600 and the DC power supply unit 1400, thereby providing RF power and DC power during the substrate S processing process. Therefore, when RF power and DC power are supplied to the substrate supporting portion 1210, the plasma is discharged between the grounded head 1300 and the substrate supporting portion 1210. The DC power supplied to the substrate supporting portion 1210 increases the sheath potential difference between the generated plasma and the substrate, which causes the ion migration speed and the ion energy to increase. Therefore, when the substrate processing apparatus is used to form an amorphous carbon layer, as the CH coupling decomposition of the amorphous carbon layer, it is converted into C=C coupling, which increases the layer density or strength of the amorphous carbon layer, And improve the etching durability.

Process for forming an amorphous carbon layer <Sixth embodiment>

9 is a flow chart showing a process of forming an amorphous carbon layer by using the substrate processing apparatus according to the fifth embodiment of the present invention.

Referring to FIGS. 8 and 9, first, a substrate S, for example, a wafer, is prepared, and the wafer is placed on the substrate supporting portion 1210 in the chamber 1100. The gap distance between the substrate supporting portion 1210 and the showerhead 1300 is preferably within about 2 cm (cm). For example, when the gap distance between the substrate supporting portion 1210 and the showerhead 1300 exceeds about 2 cm, the plasma discharge may be unstable, or a problem may occur due to arcing under high pressure.

In step S100, RF is supplied to the substrate supporting portion 1210 by using the RF power supply unit 1600 and the DC power supply unit 1400. Electricity and DC power. Wherein, the RF power ranges from about 800 watts to about 1500 watts, the DC power ranges from about -100 volts to about -800 volts, and the frequency of the DC power ranges from about 20 kilohertz to about 200 kilohertz. In the range. In addition, the duty ratio (where DC power is off during the duty cycle of DC power) is from about 10% to about 50%, and the pressure is from about 1 Torr to about 7 Torr. In step S200, the process gas is sprayed toward the substrate S by using the material supply units 1110 and 1120 and the shower head 1330. Therefore, in step S300, plasma is generated between the head 1300 and the substrate supporting portion 1210, and an amorphous carbon layer is formed on the substrate S. The etching durability of the amorphous carbon layer of the embodiment is superior to that of the amorphous carbon layer formed by a conventional substrate processing apparatus (CVD) and method. Referring to Fig. 1, a conventional substrate processing apparatus (CVD) can supply RF power to a head located on the upper side, and the area of the head and the substrate supporting portion are almost the same. If the conventional head has almost the same area as the substrate supporting portion, it means that the DC self-bias is not substantially supplied to the substrate mounted on the substrate supporting portion. Therefore, the ion migration speed and energy are relatively low. Among them, the density and strength of the layer of the conventional amorphous carbon layer are lower than those of the amorphous carbon layer of the embodiment, and thus the amorphous carbon layer is conventionally compared with the etching durability of the amorphous carbon layer of the embodiment. Etching durability is superior.

Referring to Figs. 10 to 14, the change in etching durability of the amorphous carbon layer according to the change in the process conditions will be described as follows. The process conditions other than the comparison process conditions (comparison factors) were set under the same conditions, the amorphous carbon layer was formed under the same conditions, and the etching process was performed under the same conditions to calculate the thickness of the removed layer. In other words, the way to calculate the thickness of the removed layer is: The thickness of the amorphous carbon layer remaining after the etching process is subtracted by the thickness (THK) of the first amorphous carbon layer formed by the deposition process performed by each of the different process conditions. The thickness of the removed layer will be named "layer loss", and a lower value of the layer loss means that it has better etching durability.

FIG. 10 is a graph showing comparison of layer loss in the case where RF power and DC power are not applied, and layer loss in the case where RF power and DC power are applied.

For this experiment, two substrates were prepared and an amorphous carbon layer was formed on each of the substrates. Among them, other process conditions are set to be the same, and DC power is supplied only to one of the two substrate supporting portions of the support substrate. For example, about 800 watts of RF power is provided to each of the two substrates, about 200 volts of DC power is supplied to only one of the two substrates to form an amorphous carbon layer, and an etching process is performed under the same conditions.

Referring to Fig. 10, the layer density of DC power (about -200 volts) supplied during the formation of the amorphous carbon layer has a higher layer density than when DC power is not supplied. Also, the layer loss value when DC power (about -200 V) is supplied together with the RF power during formation of the amorphous carbon layer has a lower layer loss value than when DC power (about 0 V) is not supplied. Since superior etching durability means having a higher layer density and a lower layer loss value, it has superior etching durability when DC power is supplied as compared with when no DC power is supplied, as shown in FIG. Shown in . This is because the collision energy between the ions and the surface of the substrate increases because the acceleration of the ions toward the substrate is increased by supplying DC power to the substrate supporting portion. In addition, due to The collision between the accelerated ions toward the substrate and the surface of the substrate, the C-H coupling of the amorphous carbon layer is degraded and converted into a C=H coupling. However, if a DC voltage is not supplied, the ions are not accelerated toward the substrate or their energy is low, so that the collision energy between the ions and the substrate is low, which makes the amorphous carbon compared to the present invention which provides a DC voltage. The ratio of CC coupling to layer conversion to C=C coupling is relatively low. Therefore, as mentioned above, the etching durability of the substrate supporting portion of the supporting substrate to which DC power is supplied is superior to that when DC power is not supplied.

Figure 11 is a graph showing changes in layer loss according to DC power values.

For this experiment, five substrates were prepared, and an amorphous carbon layer was formed on the five substrates. Among them, other process conditions are set to be the same, and different DC voltages are supplied to each of the five substrate supporting portions of the support substrate. For example, RF power and DC power are supplied to each of the five substrates, however, the RF power is set equal, set at about 800 watts, and the DC voltage is set to be different, set at about 0 volts (DC is not provided) Power), about -100 volts, about -200 volts, about -300 volts, about -400 volts, and about -800 volts to form an amorphous carbon layer of about 2000 angstroms (Å).

Referring to Figure 11, the layer loss appears to decrease as the DC voltage increases from about -200 volts to about -800 volts. This is because as the DC voltage increases from about -200 volts to about -800 volts, the ion acceleration moving toward the substrate increases, and the collision energy between the substrate and the ions increases proportionally. In addition, when the DC voltage is increased from about 0 volts to about -100 volts, the layer loss is reduced, however, the layer loss is again increased in the DC voltage increasing section from about -100 volts to about -200 volts. At the same time, from about -100 volts to about -200 volts DC voltage section (layer loss) The increase in power consumption exhibits a different slope in the DC voltage section (layer loss reduction) from about -100 volts to about -800 volts, however, a layer loss of less than about 100 angstroms is about -100 volts. Produced in a section of approximately -800 volts. The layer loss corresponding to about 0 volts DC voltage (DC = about 0 volts) is greater than about 100 angstroms, and this layer loss is at least about 10 angstroms greater than the layer loss corresponding to -100 volts DC voltage (DC = about -100 volts). However, the difference between the layer loss corresponding to a DC voltage of about -200 volts and the layer loss corresponding to about -100 volts DC is small, and its value is about 3.8 angstroms. In the following, it can be inferred that the value of the layer loss corresponding to a DC voltage segment from about 0 volts to about -100 volts can be about 100 angstroms. This is because, when the DC voltage is lower than about 100 volts, the effect of the supplied DC voltage is not shown since it has similar ion acceleration and ion energy as when DC power is not supplied. Conversely, when the DC voltage is greater than about -800 volts, the ion energy toward the substrate is excessive, and layer loss and strength may be reduced by damaging the layer, and components such as heaters installed inside may be damaged. Thus, embodiments of the present invention provide a DC voltage from about -100 volts to about -800 volts to form an amorphous carbon layer that is superior to conventional amorphous carbon layers.

FIG. 12 is a graph showing characteristics of layer loss according to duty-cycle-off-time-ratio (work ratio) of DC power.

For this experiment, six substrates were prepared, and an amorphous carbon layer was formed on the six substrates. Among them, other process conditions are set to be the same, and each of the six substrate supporting portions of the support substrate is provided with a different DC power off time ratio. For example, approximately 800 watts of RF power and approximately -750 volts and approximately 20 kilohertz pulses are provided to each of the six substrates. DC power is used to form an amorphous carbon layer of about 2000 angstroms. And when an amorphous carbon layer is formed on each of the six substrates, the DC power duty cycle supplied to the substrate supporting portion is controlled such that the off time is about 0%, about 14%, about 20%, about 30%, about 40%, about 50%.

Referring to Figure 12, the layer loss appears to decrease as the turn-off time ratio increases from about 0% to about 40%, and the layer loss shows a small increase as the turn-off time ratio increases from about 40% to about 50%. . From this slope, it can be inferred that the layer loss increases when the off time ratio is greater than about 50%. Therefore, referring to the experimental results of FIG. 12, the DC power having the DC power pulse by the on-off is provided in comparison with the DC power that is supplied without disconnecting the DC power and continuously supplying the DC power during the deposition. Relatively superior etch durability. Also, even if pulsed DC power is supplied, the etching durability is still changed due to its period.

Meanwhile, when the disconnection time ratio of the DC power duty cycle is less than about 10%, since the time in which DC power is not supplied (this case is referred to as "off time") is too short, it may cause charging to not disappear and The problem still exists during the disconnection time.

In other words, since there is no effect of providing pulsed DC power, the layer loss is similar to the case where DC power is not supplied. Furthermore, if charging does not disappear and is still present during the off time, a problem may arise that the ion acceleration may decrease as the resistance occurs on the surface of the ion and the previously charged surface. Conversely, when the DC power duty cycle off time ratio is greater than about 50%, since the time to provide DC (this case is referred to as "on time") is too short, the effect of providing DC may not be exhibited. Therefore, layer loss may Similar to layer loss when DC power is not supplied. Accordingly, the DC power duty cycle off time ratio of embodiments of the present invention is controlled to be within about 10% to about 50% to form an amorphous carbon layer that is superior to conventional amorphous carbon layers.

Figure 13 is a graph showing the characteristics of layer loss according to the difference between DC voltage and pressure.

For this experiment, six substrates were prepared, and an amorphous carbon layer was formed on the six substrates. Wherein, other process conditions are set to be the same, the DC voltage is changed to about -100 volts, about -400 volts, about -800 volts, and the pressure is changed to about 4 Torr or about 7.5 Torr to form an amorphous carbon layer.

Referring to FIG. 13, when the DC voltage is the same and both are about -400 volts, the layer loss of the amorphous carbon layer formed under a pressure of about 4 Torr is lower than when the amorphous carbon layer is formed under a pressure of about 7.5 Torr. Layer loss. Since then, etch durability has been superior at relatively low pressures during equal DC voltage conditions. This is because, due to the increased collision between ions, the ion acceleration toward the substrate is reduced.

Further, as shown in FIG. 13, the layer loss is reduced as the DC voltage is increased from about 0 volts to about -800 volts at the same pressure of about 4 Torr. In other words, as the DC voltage increases at the same pressure of about 4 Torr, the etching durability increases proportionally. Also, when the DC voltage is increased from about 0 volts to about -800 volts at the same pressure of about 7.5 Torr, the layer loss is reduced, and as the DC voltage is increased at equal pressure, the etching durability is proportionally increased. This is because, as mentioned above, when the DC voltage supplied to the substrate at an equal pressure is relatively high, the ion acceleration toward the substrate increases.

Figure 14 is a general graph showing the characteristics of layer loss according to voltage, RF power, and pressure.

Referring to Figure 1, when the pressure is as low as about 1 Torr, the etch durability is not proportionally increased as the DC voltage is increased at a pressure greater than about 4 Torr. In a different example, when the pressure is equally set to about 4 Torr and the RF power is equally set to about 800 watts, the etch durability increases proportionally as the DC voltage increases from about 0 volts to about -800 volts. . Also, when the pressure is equally set to about 7.5 Torr, and the RF power is equally set to about 800 watts, as the DC voltage increases from about 0 volts to about -800 volts, the results shown in FIG. 14 are also shown in FIG. The results described in the same are the same, that is, the etching durability is proportionally increased. However, when the DC voltage exceeds about -800 volts, the ion energy toward the substrate becomes too large, which may cause the layer density and strength to decrease.

In other words, from the change in the etching durability according to the pressure and the DC voltage as shown in FIGS. 13 and 14, when the pressure is less than about 1 Torr, in the DC voltage section from about -100 volts to about -800 volts, The etching durability is improved. And when the pressure is from about 4 Torr to about 7.5 Torr, the etch durability is improved in the relatively high DC voltage section compared to when the pressure is less than about 1 Torr. In other words, when the pressure is increased from about 4 Torr to about 7.5 Torr, the etch durability is improved in a DC voltage section of about -400 volts to about -800 volts. This is because, as the pressure rises, the collision frequency of electrons and ions greatly increases, making unidirectional acceleration relatively difficult. Therefore, a relatively high potential difference must be applied at high pressure to increase the ion acceleration moving toward the substrate compared to at lower pressures. The experimental results show that the pressure corresponds to from about 4 Torr to about 7.5 Torr, and the etching durability is from about -400 volts to about -800 volts. The section has been improved. Also, when the pressure is greater than about 7.5 Torr, the ion acceleration toward the substrate may decrease due to an increase in collision between ions, and the etching durability may be reduced. At this point, when the DC voltage is excessively increased to increase the ion acceleration, the ion energy toward the substrate becomes excessive, which may reduce the layer density and strength by damaging the layer, and may damage the heater such as the heater installed inside. element. Thus, in embodiments of the invention, the pressure must be set between about 1 Torr and about 7.5 Torr when forming the amorphous carbon layer.

The experimental data described in FIGS. 10 to 14 shows that the substrate supporting portion of the supporting substrate is provided in forming the amorphous carbon layer serving as a hard mask, compared to when the RF power and the DC power are not supplied to the substrate supporting portion. RF power and DC power have superior etch durability. At this time, in the embodiment of the present invention, a DC voltage of about -100 volts to about -800 volts is set, and the DC power off time (working ratio) of the DC power duty cycle is controlled to be from 10% to 50. Between %, to form an amorphous carbon layer superior to the conventional amorphous carbon layer.

15 and FIG. 16 are conceptual diagrams for describing differences between the substrate processing apparatuses of FIGS. 1 and 8, and FIGS. 15 and 16 both illustrate charges supplied by the substrate processing apparatus of FIGS. 1 and 8.

In FIG. 1, the substrate supporting portion 210 is grounded, and RF power is supplied via the shower head 300, however, in FIG. 8, the shower head 1300 is grounded and the negative potential and RF power are supplied to the substrate supporting portion 1210.

At this time, when the same potential difference is provided between the head 1300 and the substrate supporting portion 1210, regardless of the power of the head 1300 and the substrate supporting portion 1210 The absolute value of the bit includes the charge generated by the head 1300 and the capacitor (Q=CV) of the substrate supporting portion 1210 by induction, so that it is considered that there is no difference in forming amorphous carbon, however, it may be due to the chamber 1100. And there is a difference. In other words, as a condition of the chamber 1100, it is grounded to form a difference.

In FIG. 1, a showerhead 300 serving as an anode forms a capacitor (as shown in FIG. 15) with a substrate supporting portion 210 serving as a cathode. Therefore, when a potential difference occurs in the anode and the cathode, the same amount (for example, eight) of the separated charges is induced in the anode and the cathode, at which time the cathode shares the electric charge so that the substrate supporting portion 210 has a lower electric charge than the anode. The induced charge (for example, four).

In contrast, in FIG. 8, the chamber 1100 and the shower head 1300 function as anodes having the same potential and the substrate supporting portion 1210 having a lower potential than the chamber 1100 and the shower head 1300 functions as a cathode (as shown in FIG. 16). Therefore, since more charge is induced to the substrate supporting portion 1210 than the shower head 1300, the anode between the shower head 1300 and the substrate supporting portion 1200 is more strongly sensed toward the substrate supporting portion 1210.

Figure 17 is a flow chart showing a process for forming an amorphous carbon layer in accordance with a sixth embodiment of the present invention.

Referring to Fig. 8 and Fig. 17, according to a plasma processing method of a sixth embodiment of the present invention, a substrate S is loaded to a substrate supporting portion of a substrate processing portion disposed opposite to each other inside a chamber, as described in step S110. At this time, the distance between the substrate supporting portion 1210 and the shower head 1300 is preferably less than 2 cm. If the distance between the substrate supporting portion 1210 and the shower head 1300 exceeds 2 A centimeter may cause problems such as plasma discharge becoming unstable under high pressure or arcing may occur.

For this reason, the driving unit 1220 raises the substrate supporting portion 1210 to control the distance between the head 1300 and the substrate supporting portion 1210.

And, as described in step S120, the process gas is then ejected toward the substrate S via the head 1300. The process gas is supplied from the material supply unit 1110, for example, acetylene (C ₂ H ₂ ) or propylene (C ₃ H ₆ ) gas may be used, or differently, a trimethylbenzene liquid heated to 340 to 380 degrees may be used. At this time, a carrier gas containing one of the following gases or a composite gas: carbon dioxide gas, helium, argon or hydrogen may be used. These gases may be supplied to the showerhead 1300 individually or in combination.

And, the chamber 1100 is then grounded to the shower head 1300, DC power is supplied to the substrate supporting portion 1210 to provide a negative potential and RF power is supplied to generate plasma, and an amorphous carbon layer is formed on the substrate S, as in step S130. Said.

At this time, the DC power can be obtained from the DC power supply unit 1400, and the RF power can be obtained from the RF power supply unit 1600.

The RF power can provide an RF of about 800 watts to 1500 watts, and the DC voltage can provide a DC voltage of about -800 volts to -100 volts. Next, in the step of forming an amorphous carbon layer on the substrate, the supplied DC power may be pulsed power. At this time, the frequency of the pulsed DC power can be controlled from 20 kHz to 200 kHz, and the duty ratio of the pulsed DC power can have a range from 10% to 50%.

In the step of forming an amorphous carbon layer on the substrate, preferably, when the cavity When the pressure inside the chamber is less than about 4 Torr, a DC voltage of about -800 volts to about -100 volts is supplied to the substrate supporting portion, and when the pressure inside the chamber is from about 4 Torr to about 7.5 Torr, the support portion to the substrate A DC voltage of about -800 volts to about -400 volts is provided.

In addition, when the gap distance between the head and the substrate supporting portion is about 0.5 cm, pulsed DC power having a frequency ranging from about 20 kHz to about 200 kHz is provided, and the gap distance between the head and the substrate supporting portion is greater than Pulsed DC power having a frequency in the range of about 20 kilohertz to about 100 kilohertz can be provided at about 0.5 centimeters and less than or equal to about 1 centimeter.

Meanwhile, it is mentioned in the present embodiment that after the process gas is ejected as described in step S120, the chamber 1100 and the shower head 1110 are grounded as described in step S130, however, it will be apparent to those skilled in the art that The chamber 1100 can be grounded to the showerhead 1110 prior to spraying the process gas.

And then, the surface of the amorphous carbon layer is subjected to plasma treatment as described in step 130, and the purification process is not performed. The purification process is performed under conventional conditions, however, naturally performing the purification step via a process of plasma treatment of the amorphous carbon layer can save time for separate purification to increase productivity.

At this time, at the start of the step of performing the plasma treatment on the surface of the amorphous carbon layer, the plasma process gas is injected into the chamber. The plasma process gas may comprise an inert gas such as argon (Ar) or a gas such as nitrogen (N2). However, it is preferred to use an inert gas which does not chemically react with the deposited amorphous carbon layer. In the present embodiment, for example, argon gas of about 2000 sccm is injected.

And then, the substrate supporting portion is supplied with RF power for generating plasma, or pulsed DC power.

At this time, the power of the RF power preferably uses lower power than when the amorphous carbon layer is deposited. If the power used is too large, it may cause damage to the surface of the substrate (wafer). For example, about 200 watts of RF power is used.

Meanwhile, when pulsed DC power is supplied to the substrate supporting portion, the supplied pulsed DC power is in a range of greater than or equal to about 650 volts and less than or equal to about 850 volts. If the potential is too low, the plasma process procedure has no effect, and if the potential is too high, the surface of the substrate (wafer) may be damaged. Additionally, at this point, the surface of the amorphous carbon layer is plasma treated by providing DC power for less than and equal to 15 seconds, as described in S 140.

When the surface of the amorphous carbon layer is subjected to a plasma process, the material substance can be easily polymerized to reduce the contaminated area of the amorphous carbon layer.

These effects are specifically described with reference to FIGS. 18 and 19.

Figure 18 is a graph showing the etching durability obtained by changing the pulse DC voltage application time during the plasma processing process.

After forming an amorphous carbon layer on five substrates under the same conditions, a voltage of about 0 volt is supplied to one of the substrates, and a pulsed DC voltage of about 750 volts is supplied to each of the other four substrates for about 0 seconds, about 5 The amorphous carbon layer was treated in seconds, about 10 seconds, and about 15 seconds, and then an etching process was performed to observe the etching durability of the amorphous carbon layer.

Referring to Fig. 18, since the extinction coefficient and the refractive index are not greatly different before and after the plasma process, plasma treatment can be performed without causing any problem even during the manufacture of the optical element.

At the same time, when providing a voltage of about 0 volts, when the plasma process is raised When the pulse DC is supplied, since the etching difference (?) between before and after the etching is small (in other words, the etching durability is small), improved etching durability can be seen. If the supplied pulsed DC power is too long, it may affect productivity and also damage the surface of the substrate, so the transit time is preferably less than or equal to 15 seconds.

Fig. 19 is a graph showing changes in etching durability according to voltage values when a pulsed DC voltage is applied during a plasma processing process.

After forming an amorphous carbon layer on six substrates under the same conditions, pulse DC voltages of about 600 volts, about 650 volts, about 700 volts, about 750 volts, about 800 volts, and about 850 volts are sequentially provided to The surface of the crystalline carbon layer is subjected to plasma treatment, and then an etching process is performed to observe the etching durability of the amorphous carbon layer.

Referring to Fig. 19, since the extinction coefficient and the refractive index are not greatly different before and after the plasma process, plasma treatment can be performed without causing problems even during the manufacture of the optical element.

At the same time, it exhibits the most superior effect when provided at about 700 volts and about 850 volts.

These two values are shown as negative values, but they should be considered as measurement errors.

Meanwhile, when the voltage corresponds to less than or equal to about 600 volts, the effect of the plasma process is low, and when excessive power such as greater than or equal to about 850 volts of power is supplied, it may damage the surface of the substrate (wafer), Thus, in an embodiment, the pulsed DC power provided is in the range of from about 650 volts to about 850 volts.

From the above results, in the embodiment of the present invention, when the chamber is grounded, the spray is made The head is grounded and provides a negative potential to the substrate support portion to improve Method of filling gaps

For example, in order to form a ruthenium layer on the upper portion of the substrate S, for example, acetylene (C ₂ H ₂ ) or propylene (C ₃ H ₆ ) may be used, or differently, heating may be used to about 340 to about 380 degrees. Trimethylbenzene liquid. At the same time, oxygen (O ₂ ) may be further contained. When oxygen is included, it can reduce the stress of the amorphous carbon layer produced and can reduce the deposition rate to aid in the gap filling process.

Figure 20 is a graph showing the relationship between oxygen (O ₂ ) and stress contained in a process material gas.

As shown in FIG. 20, the oxygen value corresponding to 0 sccm has a stress of about 427 (negative megapascals (-Mpa)), and the oxygen value corresponding to about 10 sccm has a stress of about 367 (negative megapascals), corresponding to The oxygen value of about 20 sccm has a stress of about 354 (negative megapascals), the oxygen value corresponding to about 30 sccm has a stress of about 281 (negative megapascal), and the oxygen value corresponding to about 60 sccm has about 270 (negative megabyte). The stress of Pa) and the oxygen value corresponding to about 120 sccm has a stress of about 173 (negative MPa).

From the above experimental results, it can be confirmed that the stress decreases as the oxygen value increases.

At this time, a carrier gas containing one of the following gases or a composite gas: carbon dioxide gas, helium, argon or hydrogen may be used.

In the substrate processing apparatus as shown in FIG. 1, when the ions having no directivity inside the plasma are deposited to the fine pattern, as shown in FIG. 2, since the ions have no directivity, ions such as snow Generally stacked. This results in the formation of an amorphous carbon layer (ACL) An overhanging effect (OV) is generated in the upper portion of the gap pattern during the process, which causes the entrance of the gap pattern formed on the substrate to be blocked, so that the inner gap may not be completely filled and voids may be easily generated.

However, as in the substrate processing apparatus as illustrated in FIG. 8, when the RF power and the DC power are supplied to the substrate supporting portion 1210, the power can control the directivity of the ions so as to be easily formed with an amorphous carbon layer (ACL). The gap pattern is filled, as shown in FIG. In particular, when pulsed DC power is supplied, it has a large effect on ion directivity. If the RF power controls the plasma density, the pulse DC pulls down the ions inside the plasma. At this time, the electrode of the pulsed DC acts as a cathode and selectively pulls ions. Therefore, the outward stretching effect occurring on the upper portion of the gap pattern is less generated, so that better gap filling can be achieved.

However, even in this case, when the amorphous carbon layer is formed rapidly, the overhanging effect may still occur inside the gap pattern. Therefore, it is important to control the process conditions, and the experimental results are described below.

FIG. 22 is a flow chart showing a method of filling a gap according to a seventh embodiment of the present invention.

Referring to FIG. 8 and FIG. 22, the plasma processing method according to the seventh embodiment of the present invention preferably loads the substrate S to the substrate supporting portion 1210 of the substrate processing apparatus 1000, and the head 1300 of the substrate processing apparatus 1000 and the substrate supporting portion 1210 are The interiors of the chambers 1100 are disposed opposite each other as described in step S210. At this time, the gap distance between the substrate supporting portion and the head 1300 is preferably controlled to be less than or equal to about 2 cm. If the gap distance between the substrate supporting portion 1210 and the showerhead 1300 is greater than about 2 cm, a question may occur. Problems such as plasma discharge instability or arcing under high pressure.

For this reason, the driving unit 1220 raises the substrate supporting portion 1210 to control the gap distance between the head 1300 and the substrate supporting portion 1210.

And, as described in step S220, the process gas is then ejected toward the substrate S via the head 1300. The process gas is supplied from the material supply unit 1110, for example, acetylene (C ₂ H ₂ ) or propylene (C ₃ H ₆ ) gas may be used, or differently, trimethylbenzene liquid heated to about 340 to about 380 degrees may be used. . At this time, a carrier gas containing one of the following gases or a composite gas: carbon dioxide gas, helium, argon or hydrogen may be used. These gases may be supplied to the showerhead individually or in combination.

And, the chamber 1100 is then grounded to the shower head 1110, DC power is supplied to the substrate supporting portion 1210 to provide a negative potential and RF power is supplied to generate plasma, and an amorphous carbon layer is formed on the substrate S, as in step S230. Said. At this time, the DC power can be obtained from the DC power supply unit 1400, and the RF power can be obtained from the RF power supply unit 1600.

At this time, RF power of about 200 watts to about 1500 watts can be provided and a DC voltage of about -1000 volts to about -100 volts can be provided. Next, in the step of forming an amorphous carbon layer on the substrate, the supplied DC power may be pulsed DC power. At this time, the frequency of the pulsed DC power can be controlled from about 20 kHz to about 200 kHz, and the duty ratio of the pulsed DC power can have a range from about 10% to about 50%.

In the step of forming an amorphous carbon layer on the substrate, it is preferred that when the pressure inside the chamber is less than about 4 Torr, a DC voltage of about -1000 volts to about -100 volts is supplied to the substrate supporting portion, and when the cavity The pressure inside the room is self-contracting When 4 Torr to about 7.5 Torr, a DC voltage of about -1000 volts to about -400 volts can be supplied to the substrate supporting portion.

In addition, when the gap distance between the head and the substrate supporting portion is about 0.5 cm, pulsed DC power having a frequency ranging from about 20 kHz to about 200 kHz is provided, and the gap distance between the head and the substrate supporting portion is greater than Pulsed DC power having a frequency in the range of about 20 kilohertz to about 100 kilohertz can be provided at about 0.5 centimeters and less than or equal to about 1 centimeter.

Meanwhile, it is mentioned in the present embodiment that the chamber 1100 and the shower head 1110 are grounded as described in step S130 after the process gas is ejected as described in step S120, however, it will be apparent to those skilled in the art that The chamber 1100 and the showerhead 1110 are grounded to ground prior to spraying the process gas.

Meanwhile, when the deposition rate during the gap filling process by using the substrate processing apparatus is excessively large, in other words, when the amorphous carbon layer is suddenly formed, the void (V) according to FIG. 16 can be formed.

Further description based on the results of the experiments from Fig. 23 to Fig. 28 is as follows.

23 is a TEM image showing a result of a process of supplying a DC voltage of about -450 volts and acetylene (C ₂ H ₂ ) of about 10 sccm to a substrate supporting portion of the substrate processing apparatus shown in FIG. Figure 24 is a partial enlarged view of Figure 23. 25 is a TEM image showing the result of a process of supplying a DC voltage of about -850 volts and an acetylene (C ₂ H ₂ ) of 10 sccm to the substrate supporting portion of the substrate processing apparatus shown in FIG. 26 is a partial enlarged view of FIG. 25. 27 is a TEM image showing a result of a process of supplying a DC voltage of about -850 volts and an acetylene (C ₂ H ₂ ) of about 20 sccm to a substrate supporting portion of the substrate processing apparatus shown in FIG. Figure 28 is a partial enlarged view of Figure 27.

Referring to Figures 23 to 28, oxygen (O ₂ ) is fixed at about 120 sccm, helium (He) is fixed at about 85 sccm, and argon (Ar) is fixed at about 357 sccm, and the pressure inside the chamber is fixed at about 1 Torr. And the temperature is fixed at about 300 °C.

As illustrated in Figures 23 to 26, when acetylene of about 10 sccm is provided, even if the DC voltage is changed from about -450 volts to about -850 volts, voids are not generated, however, when the DC voltage is fixed at about -850 When the volts and the supply increase to about 20 sccm, it shows signs of voids. The deposition rate according to the first process conditions of FIGS. 23 and 24 is about 2.5 angstroms/second, and the deposition rate according to the second process conditions of FIGS. 25 and 26 is about 5 angstroms/second, up to about 5 angstroms/second. The voids are still not produced, however, the deposition rate according to the third process conditions of Figs. 27 and 28 is about 5 Å/sec, and voids are generated in this case, so it is possible to make the deposition rate less than or equal to 10 Å/sec. And to prevent the formation of voids.

It will be apparent to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention. Therefore, it is intended that the present invention cover the modifications and modifications of the present invention as long as the modifications and variations are within the scope of the appended claims and their equivalents.

10‧‧‧Substrate support device

100, 1100, 2100‧‧ ‧ chamber

110, 1110, 1120‧‧‧ material supply unit

210, 1210, 2210‧‧‧ substrate support

300, 1300, 2300‧‧ ‧ sprinklers

600, 1600‧‧‧RF power supply unit

1200, 2200‧‧‧ substrate support unit

1220‧‧‧ drive unit

1400‧‧‧DC Power Supply Unit

1500‧‧‧ filter

2101‧‧‧ Chamber body

2102‧‧‧Case cover

2110‧‧‧Material supply line

2211‧‧‧ spray holes

2221‧‧‧ shaft

2222‧‧‧Power unit

2410‧‧‧Power line

2420‧‧‧Power supply unit

2500‧‧‧ cushion

2800‧‧‧Connecting components

2810‧‧‧Vertically extended parts

2820‧‧‧ horizontal extension parts

H1‧‧‧ clearance distance

H2‧‧‧ gap distance

S‧‧‧Substrate

S100~S300, S110~S140, S210~S230‧‧‧ steps

1 is a schematic cross-sectional view showing a substrate processing apparatus.

2 is a conceptual cross-sectional view showing a brief result of a gap filling process by using a substrate processing apparatus as shown in FIG. 1.

3 is a cross-sectional view showing a substrate processing apparatus having a connecting member mounted in accordance with a first embodiment of the present invention.

4 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head according to the first embodiment of the present invention.

Figure 5 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head according to the second embodiment of the present invention.

Figure 6 is a cross-sectional view showing a connecting member in which one end is connected to the inner side surface of the chamber and the other side is connected to the head according to the third embodiment of the present invention.

Figure 7 is a cross-sectional view showing a substrate processing apparatus in accordance with a fourth embodiment of the present invention.

Figure 8 is a cross-sectional view showing a substrate processing apparatus in accordance with a fifth embodiment of the present invention.

9 is a flow chart showing a process of forming an amorphous carbon layer by using the substrate processing apparatus according to the fifth embodiment of the present invention.

FIG. 10 is a graph showing comparison of layer loss in the case where RF power and DC power are not applied, and layer loss in the case where RF power and DC power are applied.

Figure 11 is a graph showing changes in layer loss according to DC power values.

FIG. 12 is a graph showing characteristics of layer loss according to duty-cycle-off-time-ratio (work ratio) of DC power.

Figure 13 is a graph showing the characteristics of layer loss according to the difference between DC voltage and pressure.

Figure 14 is a general graph showing the characteristics of layer loss according to voltage, RF power, and pressure.

15 and FIG. 16 are conceptual diagrams for describing the difference between the substrate processing apparatus of FIGS. 1 and 8, which both illustrate the charges provided by the substrate processing apparatus of FIGS. 1 and 8.

Figure 17 is a flow chart showing a process for forming an amorphous carbon layer in accordance with a sixth embodiment of the present invention.

Figure 18 is a graph showing the etching durability obtained by changing the pulse DC voltage application time during the plasma processing process.

Fig. 19 is a graph showing changes in etching durability according to voltage values when a pulsed DC voltage is applied during a plasma processing process.

Figure 20 is a graph showing the relationship between oxygen (O ₂ ) and stress contained in a process material gas.

Figure 21 is a schematic conceptual cross-sectional view showing the result of a gap filling process performed by using the substrate processing apparatus shown in Figure 8.

FIG. 22 is a flow chart showing a method of filling a gap according to a seventh embodiment of the present invention.

Figure 23 is a TEM image showing the results of a process for supplying a DC voltage of about -450 volts and an acetylene (C ₂ H ₂ ) of about 10 sccm to the substrate supporting portion of the substrate processing apparatus shown in Figure 8.

Figure 24 is a partial enlarged view of Figure 23.

Figure 25 is a TEM image showing the results of a process for supplying a DC voltage of about -850 volts and an acetylene (C ₂ H ₂ ) of about 10 sccm to the substrate supporting portion of the substrate processing apparatus shown in Figure 8.

Figure 26 is a partial enlarged view of Figure 25.

Figure 27 is a TEM image showing the results of a process for supplying a DC voltage of about -850 volts and an acetylene (C ₂ H ₂ ) of about 20 sccm to the substrate supporting portion of the substrate processing apparatus shown in Figure 8.

Figure 28 is a partial enlarged view of Figure 27.

2100‧‧‧室

2101‧‧‧ Chamber body

2102‧‧‧Case cover

2110‧‧‧Material supply line

2200‧‧‧Substrate support unit

2210‧‧‧Substrate support section

2211‧‧‧ spray holes

2221‧‧‧ shaft

2222‧‧‧Power unit

2300‧‧‧ nozzle

2410‧‧‧Power line

2420‧‧‧Power supply unit

2500‧‧‧ cushion

2800‧‧‧Connecting components

2810‧‧‧Vertically extended parts

2820‧‧‧ horizontal extension parts

S‧‧‧Substrate

Claims (20)

A substrate processing apparatus comprising: a chamber having an internal space; a substrate supporting portion disposed inside the chamber and mounting a substrate; and a shower head grounded and disposed opposite to the substrate supporting portion, the head being oriented The substrate ejecting material; and a connecting member having one end electrically connected to the chamber and the other end electrically connected to the shower head to extend the grounding region. The substrate processing apparatus according to claim 1, wherein the connecting member has a ring shape. The substrate processing apparatus according to claim 1, wherein one side of the head opposite to the substrate supporting portion is located in the same horizontal plane as one side of the connecting member. The substrate processing apparatus of claim 1, wherein a gasket is installed between the shower head and the connecting member, and wherein the connecting member is mounted to surround the shower head and the gasket At least one of the circumferences. The substrate processing apparatus according to claim 1, wherein the substrate supporting portion is electrically connected to a power supply unit that supplies RF power. A substrate processing apparatus comprising: a chamber having an internal space and being grounded; a substrate supporting portion mounting a substrate and disposed in the chamber a nozzle that is grounded and disposed opposite the substrate supporting portion to eject material toward the substrate; an RF power supply unit that supplies RF power to the substrate supporting portion; and a DC power supply unit that The substrate support portion provides DC power. The substrate processing apparatus of claim 6, wherein the DC supply unit provides pulsed DC power. The substrate processing apparatus of claim 6, further comprising: a filter that protects the DC power supply unit from the RF power of the RF power supply unit. A process for forming an amorphous carbon layer on a substrate, comprising: supplying RF power and DC power to a substrate supporting portion on which the substrate is mounted; grounding a shower head for spraying a material gas toward the substrate; and using the shower head A material gas is sprayed onto the substrate. A process for forming an amorphous carbon layer on a substrate as described in claim 9, wherein the substrate supporting portion is supplied with a DC power voltage of from about -100 volts to about -800 volts. A process for forming an amorphous carbon layer on a substrate as described in claim 9 wherein the DC power is pulsed. The process for forming an amorphous carbon layer on a substrate as described in claim 9 further includes: treating the surface of the amorphous carbon layer with a plasma. The process for forming an amorphous carbon layer on a substrate as described in claim 12, wherein the second RF power supplied in the process of treating the surface of the amorphous carbon layer with plasma is low The RF power in the process of forming amorphous carbon. A process for forming an amorphous carbon layer on a substrate as described in claim 12, wherein the purification process is performed in the process of treating the surface of the amorphous carbon layer with a plasma. A method of filling a gap, comprising: loading a substrate on which a gap pattern is formed on a substrate supporting portion, ejecting a process gas toward the substrate, and filling an amorphous carbon layer formed by grounding the chamber and the shower head to the In the gap pattern on the substrate, DC power having a negative potential and RF power generating plasma are supplied to the substrate supporting portion. A method of filling a gap as described in claim 15 wherein the pulsed DC power supply is provided in the process of forming the amorphous carbon layer on the substrate. A method of filling a gap as described in claim 15 wherein said RF power is in the range of from about 200 watts to about 1500 watts. The method of filling a gap according to claim 15, wherein the process gas comprises acetylene (C ₂ H ₂ ), helium (He), and argon (Ar). The method of filling a gap according to claim 15, wherein the process gas comprises at least one of the following gases: acetylene (C ₂ H ₂ ), propylene (C ₃ H ₆ ), and oxygen (O ₂ ). . The method of filling a gap according to claim 15, further comprising: a filter electrically connected to the substrate supporting portion to protect the DC power supply unit from the RF power.